Resistive element

Abstract

The present invention provides a resistive element capable of contributing to improved reliability, even with respect to repeated temperature increases and decreases. The resistive element comprises: a substrate; a resistive layer that is disposed on the substrate and has a prescribed pattern; a pair of electrodes which are disposed on the substrate that includes the resistive layer and which are connected to both ends of the resistive layer; and a passivation layer which is disposed on the substrate that includes the pair of electrodes and the resistive layer, and which has a pair of openings communicating with the pair of electrodes.

Description

Resistance element

[0001] [Description of Related Applications] The present invention is based on Japanese Patent Application No. 2023-056631 (filed March 30, 2023), the entire contents of which are incorporated herein by reference. The present invention relates to a resistance element.

[0002] Because electronic devices are generally sensitive to heat, they have often been installed far from the heat source they are intended to control. However, in recent years, they have begun to be installed closer to the heat source. For example, in the automotive field, ECUs (Electronic Control Units) have been relocated from the vehicle interior to the engine compartment. By installing electronic devices closer to the heat source, the distance between the electronic devices and sensors, actuators, etc. located at the heat source is reduced, improving the accuracy of feedback control. The ability to install electronic devices closer to the heat source is made possible by the improved heat resistance of electronic components built into electronic devices. Among electronic components, resistive elements often have a maximum operating temperature of around 180°C, assuming use in the automotive field (see, for example, Patent Document 1 and Non-Patent Documents 1 and 2).

[0003] Generally, metal resistors have an upper limit to the operating temperature due to temperature dependency and self-heating, making stable use at high temperatures of 500°C or higher difficult. However, it has been reported that resistor elements using constantan, nichrome, or Pt as the resistive material and sapphire or quartz glass as the substrate can operate at 500°C (see Non-Patent Document 3).

[0004] Japanese Patent Application Publication No. 10-326921

[0005] Susumu Kogyo Co., Ltd. High-temperature metal film chip resistors (ultra-precision grade) "RGT series": https: / / www.ipros.jp / product / detail / 2000364129 / Panasonic high-temperature resistant chip resistors: https: / / industrial.panasonic.com / jp / products / pt / high-temperature-chip-resistors Nuclear System Research and Development Project Results Report: https: / / www.nsystemkoubo.jp / result / achv_report / document / r13report.pdf

[0006] The following analysis is provided by the present inventors.

[0007] However, according to the verification by the inventors of the present application, it has been confirmed that the resistance element described in Non-Patent Document 3 is vulnerable to repeated temperature increases and decreases and does not have long-term stability.

[0008] A main object of the present invention is to provide a resistance element that can contribute to improving reliability even when the temperature is repeatedly increased and decreased.

[0009] A resistive element according to a first aspect includes a substrate, a resistive layer arranged on the substrate and having a predetermined pattern, a pair of electrodes arranged on the substrate including the resistive layer and connected to both ends of the resistive layer, and a passivation layer arranged on the substrate including the pair of electrodes and the resistive layer and having a pair of openings communicating with the pair of electrodes.

[0010] The first aspect can contribute to improving reliability even when the temperature is repeatedly increased and decreased.

[0011] 1A is a plan view schematically showing the configuration of a resistance element according to an embodiment, and FIG. 1B is a cross-sectional view taken along line X1-X1'. It is a cross-sectional view showing steps in a method for manufacturing a resistance element according to an embodiment. It is a plan view schematically showing the configuration of a resistance element according to an example, and FIG. 1B is a cross-sectional view taken along line X2-X2'. It is a plan view schematically showing the configuration of a resistance element according to a comparative example, and FIG. 1B is a cross-sectional view taken along line X3-X3'. It is a schematic diagram showing the configuration of a measuring device used to measure the resistance values ​​of resistance elements according to an example and a comparative example. It is a graph showing the temperature dependence of the resistance value of a resistance element according to an example. It is a graph showing the dependence of the rate of change of resistance value of resistance elements according to an example and a comparative example on the number of temperature rises and falls. It is an image diagram when a resistance element according to an example is irradiated with X-rays. It is a graph showing the cumulative dose dependence of the rate of change of resistance value of a resistance element according to an example. It is a graph showing the temperature dependence of the rate of change of resistance value of a resistance element according to an example after irradiating the resistance element with 300 kGy and 10 temperature rises and falls from 20 to 400°C.

[0012] Hereinafter, embodiments will be described with reference to the drawings. Note that when reference numerals are used in this application, they are intended solely to aid understanding and are not intended to limit the present invention to the illustrated embodiments. Furthermore, the following embodiments are merely examples and do not limit the present invention.

[0013] 1A and 1B are a plan view and a cross-sectional view taken along line X1-X1', respectively, showing a configuration of a resistor element according to an embodiment of the present invention.

[0014] The resistor element 1 is an electronic component used to obtain a predetermined electrical resistance value (see FIG. 1 ). The resistor element 1 is configured to operate stably even at temperatures as high as at least 500°C. The resistor element 1 is also configured to operate stably even in a radiation environment. The resistor element 1 can be used in a variety of fields, including machine tools and automobiles that require high accuracy through feedback control near heat sources, electrical fields where heat dissipation using heat sinks has become difficult due to high density, electronic component fields where development of diamond-based transistors and diodes for use in high-temperature environments is progressing, space and aviation fields where vacuums make heat removal difficult, communications fields where electronic components are becoming increasingly hot due to increased communication speeds, and nuclear fields where radiation-affected devices include area monitors for water fast reactors and light-water reactors, containment vessel atmosphere monitors, electronic circuits for instrumentation of primary coolant systems in sodium fast reactors, and nuclear instrumentation preamplifiers. The resistor element 1 includes a substrate 10, a resistive layer 20, electrodes 31 and 32, and a passivation layer 40.

[0015] The substrate 10 is a plate-shaped member (see FIG. 1). The substrate 10 can be made of a material that can withstand a high-temperature environment of at least 600°C. The substrate 10 can be made of a material with a softening point (melting point) of 1000°C or higher. In order to improve the adhesion between the substrate 10 and the resistive layer 20, the difference in the thermal expansion coefficient (thermal expansion coefficient) between the substrate 10 and the resistive layer 20 at room temperature is 3×10. －４ / °C or less. Furthermore, in order to improve adhesion between the substrate 10 and the resistive layer 20, a material that maintains surface flatness at at least 500°C can be used for the substrate 10. Furthermore, in order to improve adhesion between the substrate 10 and the resistive layer 20, it is preferable to use a substrate 10 having a surface roughness (Ra in accordance with ISO 4287, the same applies hereinafter) of 10 nm or less. If the surface roughness exceeds 10 nm, peeling may occur at the interface between the substrate 10 and the resistive layer 20. For example, a substrate made of sapphire, quartz (softening point: 1740°C), glass, or the like can be used as the substrate 10.

[0016] The resistive layer 20 is a layer made of a resistive material (see FIG. 1). The resistive layer 20 can be formed on the substrate 10 in a meandering shape as shown in FIG. 1A (or in other shapes). The resistive layer 20 has a thermal expansion coefficient of 10 －３ In order to improve the adhesion between the substrate 10 and the resistive layer 20, the difference in thermal expansion coefficient between the substrate 10 and the resistive layer 20 at 20°C should be 3×10 －４ It is preferable to select materials so that the difference in thermal expansion coefficient is 3×10 / °C or less. －４ / °C, peeling may occur at the interface between the substrate 10 and the resistive layer 20. －７ For the resistive layer 20, a material having a melting point of 780° C. or higher can be used. For example, an alloy of any combination of Cu, Ni, Mn, Cr, and Sn can be used as the resistive layer 20. In particular, when the substrate 10 is made of sapphire (thermal expansion coefficient: 5.5 to 10×10), －６ / °C (room temperature)), CuNi (constantan, resistivity: 5.0 × 10 －７ Ωm, thermal expansion coefficient: 1.5×10 －５ / °C, melting point: around 1250°C), Ni80Cr20 (nichrome, resistivity: 11.0 x 10 －７ Ωm (room temperature), thermal expansion coefficient: 28×10 －５ / °C (room temperature), melting point: around 1400°C), Cu-Ni-Mn (manganin, resistivity: 4.4 x 10 －７ Ωm (room temperature), thermal expansion coefficient: 2.0 × 10 －５ / °C (room temperature), melting point: around 1020°C), Cu-Mn-Sn (geranine, resistivity: 2.9 × 10 －７ Ωm (room temperature), thermal expansion coefficient: 1.0×10 －５ / °C (room temperature, melting point: around 1000°C) can be used.

[0017] The electrodes 31 and 32 are portions that electrically connect the outside of the resistance element 1 to the resistance layer 20 (see FIG. 1 ). The electrode 31 is formed on the substrate 10 so as to cover one end of the resistance layer 20. The electrode 32 is formed on the substrate 10 so as to cover the other end (the end opposite to the one end) of the resistance layer 20. The electrodes 31 and 32 can be made of a material with a melting point of 780° C. or higher. The electrodes 31 and 32 can be made of a material that is radiation resistant. For example, Pt, Ru, or Ir can be used as the electrodes 31 and 32.

[0018] The passivation layer 40 is a layer that mainly protects (passivates, inactivates, and reduces thermal stress) the resistance layer 20. The passivation layer 40 can be made of a radiation-resistant material. It is preferable to use a material of the same quality as that of the substrate 10 (a material whose main component is the same as that of the substrate 10). The passivation layer 40 can be made of, for example, a metal oxide such as alumina, silicon oxide, or chromium oxide, or a metal nitride film such as silicon nitride, aluminum nitride, chromium nitride, or TiAlN.

[0019] When the resistance element 1 described above is heated from 20°C in an Ar atmosphere and held at 600°C for 1 hour, the rate of change in resistance at 600°C relative to the resistance at 20°C immediately before the start of the temperature rise is preferably 10% or less, more preferably 5% or less. Furthermore, when the resistance element 1 is subjected to temperature rise and fall cycles between 20°C and 500°C at least nine times, the rate of change in resistance at 500°C each time relative to the resistance at 20°C immediately before the start of the temperature rise and fall is preferably 10% or less, more preferably 5% or less. Furthermore, even after irradiating the resistance element 1 with at least 300 kGy of radiation, the rate of change in resistance at 20°C after 300 kGy irradiation relative to the resistance at 20°C immediately before the start of the radiation irradiation is preferably 10% or less, more preferably 5% or less. Furthermore, even if the resistance element 1 is irradiated with 300 kGy of radiation and then subjected to temperature increases and decreases between 20°C and 400°C at least 10 times, the rate of change in resistance value at 400°C after temperature increases and decreases relative to the resistance value at 20°C after temperature increases and decreases is preferably 10% or less, more preferably 5% or less.

[0020] The method for manufacturing a resistor element according to the embodiment will be described with reference to the drawings. Figure 2 is a cross-sectional view showing a process for manufacturing a resistor element according to the embodiment.

[0021] First, the resistive layer 20 is formed on the substrate 10 (see FIG. 2A ). The substrate 10 may have a surface roughness of 10 nm or less. However, if the surface roughness exceeds 10 nm, the surface roughness can be reduced to 10 nm or less by, for example, chemical mechanical polishing. The resistive layer 20 can be formed, for example, by forming a lift-off resist (not shown) having an opening pattern for the resistive layer 20 on the substrate 10 by lithography, anisotropically depositing a resistive material for the resistive layer 20 on the substrate 10 including the lift-off resist by RF (Radio Frequency) sputtering, CVD (Chemical Vapor Deposition), or the like, and then removing (peeling off) the lift-off resist including the resistive material from the substrate 10 to form the resistive layer 20.

[0022] Next, electrodes 31 and 32 are formed on both ends of the resistive layer 20 including the substrate 10 (see FIG. 2B ). For example, the electrodes 31 and 32 can be formed by forming a lift-off resist (not shown) having openings for the electrodes 31 and 32 on the substrate 10 including the resistive layer 20 by lithography, anisotropically depositing an electrode material for the electrodes 31 and 32 on the lift-off resist and the substrate 10 including the resistive layer 20 by RF (Radio Frequency) sputtering, CVD (Chemical Vapor Deposition), or the like, and then removing (peeling off) the lift-off resist including the electrode material on the lift-off resist from the substrate 10 including the resistive layer 20 to form the electrodes 31 and 32.

[0023] Next, a passivation layer 40 is formed on the entire surface of the substrate 10 including the resistance layer 20 and the electrodes 31, 32 (see FIG. 2C). The passivation layer 40 can be formed by, for example, applying a coating agent for the passivation layer 40 onto the substrate 10 including the resistance layer 20 and the electrodes 31, 32 by dip coating, spin coating, or the like, followed by drying and sintering (annealing).

[0024] Finally, openings 41 and 42 that lead to the electrodes 31 and 32 are formed in the passivation layer 40 (see FIG. 1 ). The openings 41 and 42 can be formed, for example, by forming an etching resist (not shown) with a pattern for the openings 41 and 42 on the passivation layer 40 by lithography, and then etching the passivation layer 40 by dry etching, wet etching, or the like until the electrodes 31 and 32 appear.

[0025] [Examples] High-temperature resistance tests and radiation resistance tests of resistance elements according to examples will be described using comparative examples and drawings. FIG. 3 shows (A) a plan view and (B) a cross-sectional view taken along the line X2-X2', which are schematic diagrams illustrating the configuration of a resistance element according to an example. FIG. 4 shows (A) a plan view and (B) a cross-sectional view taken along the line X3-X3', which are schematic diagrams illustrating the configuration of a resistance element according to a comparative example. FIG. 5 is a schematic diagram illustrating the configuration of a measuring device used to measure the resistance values ​​of resistance elements according to examples and comparative examples. FIG. 6 is a graph showing the temperature dependence of the resistance value of a resistance element according to an example. FIG. 7 is a graph showing the dependence of the rate of change of resistance value of resistance elements according to examples and comparative examples on the number of temperature rises and falls. FIG. 8 is an image diagram of a resistance element according to an example when irradiated with X-rays. FIG. 9 is a graph showing the cumulative dose dependence of the rate of change of resistance value of a resistance element according to an example. FIG. 10 is a graph showing the temperature dependence of the rate of change of resistance value of a resistance element according to an example after irradiating the resistance element with 300 kGy and 10 cycles of temperature rise and fall from 20 to 400°C.

[0026] [Fabrication of Resistor Element] In order to conduct a high temperature resistance test and a radiation resistance test of the resistor element, a resistor element according to an example having a passivation layer 40 (1A in FIG. 3) and a resistor element according to a comparative example having no passivation layer (1B in FIG. 4) were fabricated.

[0027] In the examples and comparative examples, the substrate 10 is made of sapphire (α-Al ２ O ３ A substrate (SAP-CD-20-1 by Crystal Base Co., Ltd.; purity 99.99%, surface roughness less than 0.5 nm, thickness 0.5 mm) was used, CuNi (constantan; purity 99.99%) was used for the resistive layer 20, and Pt (purity 99.99%) was used for the electrodes 31 and 32. The passivation layer 40 in this example was made of alumina (Al ２ O ３ (Coating material Al-O3-P manufactured by Kojundo Chemical Co., Ltd.) was used.

[0028] The manufacturing procedures for the examples and comparative examples are as follows.

[0029] First, a lift-off resist (not shown) having an opening for a pattern for the resistive layer 20 (line width 1 mm, meandering pattern; see Figures 3 and 4) was formed on the substrate 10 by lithography, and a resistive material for the resistive layer 20 was deposited on the substrate 10 including the lift-off resist at a rate of 55 nm / min by RF sputtering to a thickness of 40 nm. The lift-off resist including the resistive material on the lift-off resist was then removed (peeled off) from the substrate 10 to form the resistive layer 20.

[0030] Next, a lift-off resist (not shown) having openings for electrodes 31 and 32 (rectangular; see FIGS. 3 and 4 ) was formed on substrate 10 including resistive layer 20 by lithography, and an electrode material for electrodes 31 and 32 was deposited on the lift-off resist and substrate 10 including resistive layer 20 by RF sputtering at a rate of 20 nm / min to a thickness of 200 nm. The lift-off resist containing the electrode material on the lift-off resist was then removed (peeled off) from substrate 10 including resistive layer 20 to form electrodes 31 and 32. The comparative example was completed at this step.

[0031] In the examples, a coating agent for the passivation layer 40 was further applied to the substrate 10 including the resistive layer 20 and the electrodes 31, 32 by dip coating to a thickness of 1 μm, and then the substrate was placed on a hot plate at 120° C. for 5 minutes to dry. Thereafter, the temperature was increased at a rate of 50° C. / min in an electric furnace, sintered (annealed) at 550° C. for 10 minutes, and then the temperature was decreased at a rate of 50° C. / min to form the passivation layer 40.

[0032] In the embodiment, furthermore, an etching resist (not shown) having a pattern for openings 41 and 42 (see FIG. 3) was formed on the passivation layer 40 by lithography, and the passivation layer 40 was etched by dry etching until the electrodes 31 and 32 appeared, thereby forming the openings 41 and 42.

[0033] [Measurement Apparatus] A measurement apparatus as shown in FIG. 5 was used to measure the resistance values ​​of the resistance elements according to the examples and comparative examples. In the measurement apparatus, a quartz chamber for accommodating the resistance element was placed in a vacuum substitution electric furnace (FT-01VAC-50 manufactured by Furutech). The quartz chamber was filled with Ar gas (Ar: 95.14%, H ２ The chamber had an inlet through which Ar gas (4.86%) flowed from a cylinder with its flow rate adjusted by a flow regulator, and an outlet through which the Ar gas in the quartz chamber was discharged to the outside air. Two coaxial cables (copper) electrically connected to an LCR meter (HIOKI Corporation: IM3536) extended into the quartz chamber and into the electric furnace. The tips of the two coaxial cables were connected (contacted, pressure-welded) to electrodes of a resistor element (corresponding to electrodes 31 and 32 in Figures 3 and 4) via copper terminals. A K-type thermocouple electrically connected to a multimeter also extended into the quartz chamber and its tip was connected (contacted, pressure-welded) to a resistor element (passivation layer 40 in the example and substrate 10 in the comparative example). The LCR meter measured the DC current when a predetermined voltage (here, ±1 V) was applied to the coaxial cables to calculate the resistance value.

[0034] (1) High-Temperature Resistance Test (1-1) Operation Test from 20°C to 600°C In the operation test from 20°C to 600°C, using a measuring device such as that shown in Figure 5, the temperature was raised at a rate of 5°C / min in an Ar gas atmosphere, and after reaching a predetermined temperature (100, 200, 300, 400, 500, 600°C), the resistance value of the resistor element was measured at the time of holding at the predetermined temperature for 1 hour. The resistor element 1A according to the example had a resistance value of 37 to 40Ω at each of temperatures of 100, 200, 300, 400, 500, and 600°C (see Figure 6), and the rate of change in resistance value at each of temperatures of 100, 200, 300, 400, 500, and 600°C relative to the resistance value at 20°C immediately before the start of the temperature rise was 5% or less. This confirmed that the resistor element according to the example operated stably as a resistor element even in a 600°C environment.

[0035] (1-2) Temperature Rise and Fall Resistance Test from 20 to 500°C In the temperature rise and fall resistance test, using a measuring device such as that shown in Figure 5, the temperature was raised from 20°C at a rate of 5°C / min in an Ar gas atmosphere, and after reaching 500°C, the resistance value of the resistor element was measured at the time of holding at 500°C for 1 hour.The temperature was then lowered from 500°C at a rate of 5°C / min, and after reaching 20°C, the resistance value was held at 20°C for 1 hour.The temperature rise, holding at 500°C, measurement, temperature drop, and holding at 20°C were then repeated.The temperature rise and fall resistance test from 0 to 500°C was conducted for the examples and comparative examples.The resistor element 1A according to the example having a passivation layer was subjected to at least nine temperature rises and falls from 20 to 500°C, and the rate of change in resistance at 500°C for each cycle relative to the resistance at 20°C immediately before the temperature rise and fall began was 10% or less, confirming that the resistance value was stable. On the other hand, in the resistance element 1B according to the comparative example, which does not have a passivation layer, the rate of change in resistance value at 500°C relative to the resistance value at 20°C immediately before the start of temperature increase / decrease exceeded 70% after the first temperature increase from 20 to 500°C (failure as a resistance element), and after the second temperature increase, contact between the resistance layer 20 and the electrodes 31, 32 or the substrate 10 deteriorated at the interface, making measurement impossible. The deterioration in contact between the resistance layer 20 and the electrodes 31, 32 or the substrate 10 is thought to be caused by peeling or disconnection of the resistance layer 20 due to differences in thermal expansion coefficients.

[0036] (2) High-Temperature Radiation Resistance and High-Temperature Radiation Reliability Tests (2-1) Operation Tests from 0 kGy to 300 kGy In the operation tests from 0 kGy to 300 kGy, as shown in FIG. 8, the surface of the resistor element 1 facing the passivation layer 40 was irradiated with X-rays at predetermined cumulative doses (1, 3, 10, 30, 100, and 300 kGy), and the resistance value of the resistor element was then measured in an Ar gas atmosphere at 20°C. The same LCR meter and coaxial cable as those in the measuring device of FIG. 5 were used for the measurements. The resistance value of the resistor element 1A according to the example showed a change rate of 10% or less at cumulative doses of 1, 3, 10, 30, 100, and 300 kGy relative to the resistance value at 20°C immediately before X-ray irradiation. This confirmed that the resistor element 1A according to the example operated stably as a resistor element even after irradiation with 300 kGy.

[0037] (2-2) Operation test after 300 kGy irradiation and 10 cycles of temperature increase and decrease from 20°C to 400°C In the temperature increase and decrease resistance test from 20°C to 400°C after 300 kGy irradiation, as shown in Figure 8, 300 kGy of X-rays were irradiated to the surface of the resistance element 1 on the passivation layer 40 side, and then, using a measuring device such as that shown in Figure 5, the temperature was increased to 400°C at a rate of 5°C / min in an Ar gas atmosphere, held at 400°C for 1 hour, cooled from 400°C to 20°C at a rate of 5°C / min, and held at 20°C for 1 hour. Thereafter, the temperature increase, 400°C hold, temperature decrease, and 20°C hold were repeated 9 times, and the resistance value of the resistance element at 20°C was measured. Further, the temperature was increased at a rate of 5°C / min to reach a predetermined temperature (100, 200, 300, 400), and the resistance value of the resistance element was measured after holding at the predetermined temperature for 1 hour. Even after irradiation with 300 kGy of X-rays and 10 cycles of temperature increase and decrease from 20°C to 400°C, the resistance value of the resistance element 1A according to the example remained at a rate of change of 5% or less at temperatures of 100, 200, 300, and 400°C relative to the resistance value at 20°C after temperature increase and decrease. This confirmed that the resistance element 1A according to the example can stably operate as a resistance element even in high-radiation and high-temperature environments.

[0038] From the above, it is considered that the passivation layer 40 of the resistive element 1A of the embodiment suppresses expansion and contraction at the interface between the resistive layer 20 and the electrodes 31, 32, and at the interface between the resistive layer 20 and the substrate 10, even in a high-radiation and high-temperature environment, thereby suppressing deterioration of contact at these interfaces.

[0039] [Adhesion Test] In the adhesion test, the surface roughness of the substrate 10 was varied, and the adhesion between the substrate 10 and the resistive layer 20 was tested using a thermal test method (heating test method) in accordance with JIS H8504:1999. Substrates 10 (sapphire substrates) with surface roughnesses of 100 nm, 30 nm, and less than 0.5 nm were prepared. The resistive layer 20 was formed using the same material and method as in the above examples. In the heating test, the sample was placed in a heating furnace at room temperature, and the temperature inside the furnace was raised to 300°C. Once the temperature reached 300°C, the sample was immediately removed and allowed to cool to room temperature. For the substrate 10 with a surface roughness of 100 nm, the adhesion between the substrate 10 and the resistive layer 20 was low, and peeling of the resistive layer 20 was observed during temperature changes. Although there was a tendency for the adhesion between the substrate 10 and the resistive layer 20 to be better when the substrate 10 had a surface roughness of 30 nm than when the substrate 10 had a surface roughness of 100 nm, it was confirmed that the resistive layer 20 peeled off as the number of temperature rises and falls increased. When the substrate 10 had a surface roughness of 0.5 nm, no peeling of the resistive layer 20 was observed even when the number of temperature rises and falls was further increased. From the above, it is presumed that peeling of the resistive layer 20 will no longer occur when the surface roughness of the substrate 10 is around 10 nm with the above heating test method.

[0040] According to the embodiment, the substrate 10 including the resistive layer 20 is covered with the passivation layer 40, which contributes to improving reliability even when the temperature is repeatedly increased and decreased.

[0041] Furthermore, according to the embodiment, the substrate 10 including the resistive layer 20 is covered with the passivation layer 40, so that the resistive element can stably operate even in a high-radiation and high-temperature environment.

[0042] Some or all of the above embodiments may be described as, but are not limited to, the following supplementary notes.

[0043] [Supplementary Note 1] A resistance element comprising: a substrate; a resistance layer disposed on the substrate and having a predetermined pattern; a pair of electrodes disposed on the substrate including the resistance layer and connected to both ends of the resistance layer; and a passivation layer disposed on the pair of electrodes and the substrate including the resistance layer, and having a pair of openings communicating with the pair of electrodes. [Supplementary Note 2] The resistance element according to Supplementary Note 1, wherein the resistance element undergoes at least nine cycles of temperature increase and decrease between 20°C and 500°C, with the rate of change in resistance value at 500°C each time being 10% or less relative to the resistance value at 20°C immediately before the start of the temperature increase and decrease. [Supplementary Note 3] The resistance element according to Supplementary Note 1 or 2, wherein the resistance element undergoes at least nine cycles of temperature increase and decrease between 20°C and 500°C, with the rate of change in resistance value at 600°C being 10% or less relative to the resistance value at room temperature immediately before the start of the temperature increase ... even when the resistance element is heated from room temperature in an Ar atmosphere and held at 600°C for one hour. [Appendix 4] The resistance element according to any one of Appendices 1 to 3, wherein, even after irradiation with at least 300 kGy of radiation, the rate of change in resistance value at 20°C after irradiation with 300 kGy is 10% or less relative to the resistance value at 20°C immediately before the start of radiation irradiation. [Appendix 5] The resistance element according to any one of Appendices 1 to 4, wherein, even after irradiation with 300 kGy of radiation and repeated temperature increases and decreases between 20°C and 400°C at least 10 times, the rate of change in resistance value at 400°C after temperature increases and decreases is 10% or less relative to the resistance value at 20°C after temperature increases and decreases. [Appendix 6] The resistance element according to any one of Appendices 1 to 5, wherein the surface roughness of the substrate is 10 nm or less. [Appendix 7] The resistance element according to any one of Appendices 1 to 6, wherein the difference in thermal expansion coefficient between the substrate and the resistance layer at room temperature is 3 x 10-4 / °C or less. [Supplementary Note 8] The resistance element according to any one of Supplementary Notes 1 to 7, wherein the passivation layer is made of the same material as the substrate. [Supplementary Note 9] The resistance element according to any one of Supplementary Notes 1 to 8, wherein the substrate is made of sapphire or quartz. [Supplementary Note 10] The resistance element according to any one of Supplementary Notes 1 to 9, wherein the resistance layer is made of an alloy of any combination of Cu, Ni, Mn, Cr, and Sn. [Supplementary Note 11] The resistance element according to any one of Supplementary Notes 1 to 10, wherein the electrodes are made of Pt.[Supplementary Note 12] The resistance element according to any one of Supplementary Notes 1 to 11, wherein the passivation layer is alumina or silicon oxide.

[0044] The disclosures of the above-mentioned patent and non-patent documents are incorporated herein by reference and may be used as the basis or part of the present invention, as necessary. Modifications and adjustments of the embodiments and examples are possible within the scope of the entire disclosure of the present invention (including the claims and drawings), and further based on the basic technical concepts thereof. Furthermore, various combinations and selections (or non-selections, as necessary) of the various disclosed elements (including each element of each claim, each element of each embodiment or example, each element of each drawing, etc.) are possible within the scope of the entire disclosure of the present invention. In other words, the present invention naturally includes various modifications and alterations that would be possible by a person skilled in the art in accordance with the entire disclosure and technical concepts, including the claims and drawings. Furthermore, with regard to the numerical values ​​and numerical ranges described in this application, any intermediate values, lower values, and smaller ranges are deemed to be included, even if not explicitly stated. Furthermore, the disclosures of the above-cited documents, when used in part or in whole in combination with the disclosures herein as part of the disclosure of the present invention, are also deemed to be included in (belong to) the disclosures of this application, in accordance with the spirit of the present invention.

[0045] REFERENCE SIGNS LIST 1 Resistor element 10 Substrate 20 Resistor layer 31, 32 Electrode 40 Passivation layer 41, 42 Opening

Claims

1. A substrate; a resistive layer disposed on the substrate and having a predetermined pattern; a pair of electrodes disposed on the substrate including the resistive layer and connected to both ends of the resistive layer; a passivation layer disposed on the substrate including the pair of electrodes and the resistive layer, the passivation layer having a pair of openings communicating with the pair of electrodes; Equipped with The resistance element has a resistance value at 300° C. that changes by 5% or less from the resistance value at room temperature immediately before the start of heating, even when the resistance element is heated from room temperature to 300° C. in an Ar atmosphere and held at 300° C. for 1 hour. Resistance element.

2. 2. The resistance element according to claim 1, wherein the rate of change in resistance value at 500°C each time the temperature is raised and lowered from 20°C to 500°C is 10% or less compared to the resistance value at 20°C immediately before the start of the temperature raising and lowering process, even when the temperature is raised and lowered at least nine times from 20°C to 500°C.

3. 2. The resistance element according to claim 1, wherein, even when the resistance element is heated from room temperature in an Ar atmosphere and held at 600°C for one hour, the rate of change in resistance value at 600°C relative to the resistance value at room temperature immediately before the start of heating is 10% or less.

4. The resistance element according to claim 1, wherein even after being irradiated with at least 300 kGy of radiation, the rate of change in resistance value at 20°C after irradiation with 300 kGy is 10% or less compared to the resistance value at 20°C immediately before the start of radiation irradiation.

5. 2. The resistance element according to claim 1, wherein the rate of change in resistance value at 400°C after temperature increase / decrease is 10% or less compared to the resistance value at 20°C after temperature increase / decrease, even when the resistance element is irradiated with 300 kGy of radiation and then subjected to at least 10 cycles of temperature increase / decrease between 20°C and 400°C.

6. 2. The resistor element according to claim 1, wherein the surface roughness of the substrate is 10 nm or less.

7. The difference in thermal expansion coefficient between the substrate and the resistive layer at room temperature is 3×10 －４ 2. The resistor element according to claim 1, wherein the resistance is 0.1 V / ° C. or less.

8. The resistive element of claim 1 , wherein the passivation layer is of the same material as the substrate.

9. The resistive element of claim 1 , wherein the substrate is sapphire or quartz.

10. 2. The resistive element according to claim 1, wherein said resistive layer is an alloy of any combination of Cu, Ni, Mn, Cr, and Sn.

11. The resistive element of claim 1 , wherein the electrodes are Pt.

12. The resistive element of claim 1 , wherein the passivation layer is alumina or silicon oxide.