Processing device, processing method, and substrate manufacturing method

Abstract

The present invention is a processing device for forming ruggedness on a substrate surface by ablation processing using a laser beam. The processing device: includes a first optical function unit comprising a shaping optical system which shapes the irradiation shape of a laser beam from a laser light source into a rectangular shape, a second optical function unit comprising a mask which includes an effective area having a pattern, and a substrate stage which holds the substrate, wherein the mask includes a mask irradiation area which is a portion of the effective area of the mask and is irradiated with the laser beam passed through the first optical function unit, the substrate includes a substrate irradiation area onto which the pattern is projected by the laser beam passed through the mask, and the substrate irradiation area is smaller than a to-be-processed area of the substrate; and is configured to perform surface ruggedness processing of the to-be-processed area of the substrate by subjecting the mask and the substrate stage to sweeping irradiation while superimposing a portion of the substrate irradiation area during a processing operation of the substrate. As a result, a processing device capable of performing fine ruggedness processing over the to-be-processed area of the substrate with high accuracy is provided.

Description

Processing device, processing method, and substrate manufacturing method

[0001] The present invention relates to a processing apparatus, a processing method, and a method for manufacturing a substrate.

[0002] Semiconductor package substrates have been actively developed in line with the trend of "More Than More" and the shift to SoC (System on a Chip), which integrates a system into a single chip.

[0003] Furthermore, the configuration of semiconductor package substrates is becoming more complex and denser, and devices using excimer lasers are being used to manufacture the base substrates.

[0004] As semiconductor package substrates become increasingly dense, the wiring on the substrates is also required to be highly precise, and the wiring is becoming multi-layered. This thinning and multi-layering of wiring has resulted in narrower and more complex line and space (L&S). As the wiring width becomes narrower, the wiring resistance tends to increase.

[0005] In order to connect multiple layers of wiring, through holes (VIAs) are provided, and in order to solve the problem of increased wiring resistance, trenches are provided in the substrate during the manufacture of semiconductor package substrates, and wiring is formed along these trenches. By forming such wiring, the cross-sectional area of ​​the wiring can be increased, thereby suppressing the increase in wiring resistance.

[0006] An example of a manufacturing method for such a semiconductor package substrate is described below. First, a build-up film is laminated on both sides of an inner layer substrate (core layer) made of glass epoxy resin material using a dedicated vacuum laminator. The surface of the build-up film thus obtained is then processed to provide the above-mentioned through holes and trenches, and a metal layer is then plated to form electrodes.

[0007] To meet the demand for higher density, the diameter of the required through holes is becoming smaller. There is also a demand for cylindrical through holes (cylindrical VIA) with a small difference between the top and bottom diameters. There is also a demand for cylindrical trenches.

[0008] To process a substrate as straight as possible to form cylindrical holes or cylindrical trenches with high precision, it is effective to use a laser beam with high resolution and high energy density. For such processing, it is preferable to use an excimer laser rather than a solid-state laser device. Although the focal depth of an excimer laser is shallow, this laser can process with high resolution and high energy density, allowing cylindrical vias or cylindrical trenches to be formed at precise positions without blurring.

[0009] Patent Document 1 describes an invention relating to a laser drilling method and apparatus. For example, claim 1 of Patent Document 1 describes irradiating a linear or rectangular beam onto a processing area of ​​a substrate to be processed through a contact mask by a contact mask method, and scanning the linear or rectangular beam across the contact mask.

[0010] Furthermore, paragraph 0037 of Patent Document 1 describes irradiating the entire pattern of a contact mask by oscillating a laser oscillator and moving a linear beam in the L-axis direction using a scanning mechanism. However, this method cannot process large substrates that require deep recesses and projections.

[0011] Furthermore, paragraphs 0049 and 0050 of Patent Document 1 describe a method of using a two-axis scanning mechanism to move a rectangular beam and sequentially irradiate each of the four divided regions of a contact mask with the rectangular beam to drill holes in the processing region directly below each region. However, with this method, although the interior of each processing region can be processed to a uniform depth, there are problems with processing quality, such as no processing at the boundary between each processing region or over-processing at the boundary by about twice the processing depth within each processing area.

[0012] Patent Document 2 describes an invention relating to a processing device and processing method for ablation processing. The processing device for ablation processing described in claim 1 of Patent Document 2 includes a scanning mechanism that moves a line beam forming unit containing a line beam forming optical system relative to the device body and scans a line of light.

[0013] Regarding this scanning mechanism, paragraph 0022 of Patent Document 2 states, "The scanning mechanism 60 is capable of moving the line beam forming unit 20 back and forth along the scanning direction (X direction), and as the line beam forming unit 20 moves, a line of light perpendicular to the scanning direction (X direction) moves relative to the mask M and the projection optical system 30, thereby scanning the mask M and the substrate W fixed to the mask stage 40 and the processing stage 50, respectively."

[0014] Furthermore, paragraph 0026 of Patent Document 2 states, "The processing stage 50 fixes the substrate W by vacuum suction or the like, and can position the substrate W relative to the mask M by moving and rotating in the X-Y directions. It can also move in steps along the scanning direction (here, the X direction) so that ablation processing can be performed over the entire substrate W."

[0015] Furthermore, paragraph 0033 of Patent Document 2 describes that "the line beam forming unit 20 is moved relative to the device body 15 to scan the line-shaped light."

[0016] The invention of Patent Document 2 cannot process large substrates that require deep irregularities. Furthermore, because the laser beam is moved during scanning, it is difficult to irradiate the entire area of ​​a large mask. This makes it difficult to handle larger substrate surfaces. Furthermore, the optical elements after the mask must be large, which makes distortion more likely and makes the system unsuitable for high-precision processing. The inclusion of a reduction projection optical lens requires the use of a very large-diameter lens, which not only increases distortion but also makes the component very expensive. It also makes it difficult to manage heat generated by the laser beam, resulting in poor processing accuracy during long-term operation.

[0017] JP 2001-79678 A JP 2021-49560 A

[0018] An example of uneven processing of semiconductor substrates is the uneven processing of the substrate surface by irradiating the substrate with a laser beam that has passed through an opening pattern in a mask, i.e., uneven processing by ablation. Ablation processing makes it possible to not only create through holes, but also to form trenches with high aspect ratios without completely penetrating the substrate.

[0019] Ideally, a laser beam with uniform energy would be irradiated over an area that covers the entire effective area of ​​the mask, but in recent years, the processing area on the semiconductor substrate surface has become larger, and as a result, the effective area of ​​the mask has also become larger.

[0020] Therefore, if a uniform laser beam is irradiated onto an area that covers the entire substrate, the energy density of the laser beam will be extremely reduced, and the processing threshold energy of the substrate surface will not be reached, making processing impossible. To process the substrate surface, it is necessary to irradiate a laser beam with a certain level of energy density. Furthermore, to process cylindrical shapes with high aspect ratios (cylindrical VIAs, cylindrical trenches), the laser energy density must be high, otherwise the wall surfaces will become blunt.

[0021] Furthermore, the laser beam energy required for ablation processing requires a much higher energy density than that of, for example, an exposure device, and consideration must be given to heat.

[0022] Furthermore, even if an energy density sufficient for ablation processing is applied, a single irradiation of the laser beam is not enough to achieve the desired processing depth, and multiple irradiations are required. In particular, in recent years, there has been a growing demand for a higher aspect ratio in processing, and there is a demand for deeper processing of the recessed and protruding portions. Therefore, it is necessary to irradiate the same position on the substrate with the laser beam multiple times to achieve deep ablation processing.

[0023] In the past, ablation processing devices and ablation processing methods have been proposed, such as those described in Patent Documents 1 and 2. However, as described above, these were not technologies capable of precisely processing fine irregularities over the entire surface of the substrate to be processed.

[0024] The present invention has been made to solve the above problems, and aims to provide a processing device that can accurately perform fine uneven processing over the entire processing area of ​​a substrate, a processing method that can accurately perform fine uneven processing over the entire processing area of ​​a substrate, and a substrate manufacturing method that can manufacture a substrate on which fine uneven processing is formed over the entire processing area of ​​a substrate with high precision.

[0025] In order to solve the above problems, the present invention provides, as a first aspect of a processing apparatus, a processing apparatus for forming fine irregularities on the surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: a first optical function unit including a laser light source that irradiates the laser beam in pulses and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit that includes a mask including an effective area having a pattern corresponding to the processing area of ​​the substrate; and a substrate stage that holds the substrate, wherein the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function unit, and the mask irradiation area is a portion of the effective area of ​​the mask, and the substrate includes a substrate irradiation area onto which the pattern is projected by the laser beam that has passed through the mask, and the substrate irradiation area is smaller than the processing area of ​​the substrate, and the processing apparatus is configured to sweep-irradiate the mask and the substrate stage while overlapping a portion of the substrate irradiation area during a processing operation on the substrate, thereby processing the surface irregularities of the processing area of ​​the substrate.

[0026] With such a processing device, it is possible to precisely process unevenness that is approximately uniform across the processing area of ​​the substrate. Therefore, with the processing device of this aspect, it is possible to precisely process fine unevenness across the processing area of ​​the substrate.

[0027] Furthermore, such a processing device does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.

[0028] Such a processing apparatus can perform high-speed, deep VIA processing and / or trench processing, and also can reduce the substrate irradiation area per shot, enabling high-density irradiation.

[0029] The present invention also provides, as a second aspect of the processing apparatus, a processing apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: a first optical function unit including a laser light source that irradiates the laser beam in pulses and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit that includes a mask including an effective area having a pattern corresponding to an area to be processed on the substrate; and a substrate stage that holds the substrate, wherein the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function unit, and the mask irradiation area is a part of the effective area of ​​the mask, and the substrate includes a substrate irradiation area onto which the pattern is projected by the laser beam that has passed through the mask, and the substrate irradiation area is smaller than the area to be processed on the substrate, and the mask and the substrate stage are configured to maintain a relatively corresponding positional relationship by operating synchronously in a plane direction that is approximately perpendicular to the direction in which the laser beam is irradiated, The processing device is configured to, during processing of the substrate, operate the mask and the substrate stage in synchronization with each other while fixing the irradiation position of the laser beam, sweep-irradiate the mask and the substrate stage, and perform surface irregularity processing of the processed area of ​​the substrate.

[0030] With such a processing device, it is possible to precisely process unevenness that is approximately uniform across the processing area of ​​the substrate. Therefore, with the processing device of this aspect, it is possible to precisely process fine unevenness across the processing area of ​​the substrate.

[0031] Furthermore, such a processing device does not require the use of high laser energy, can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.In addition, because small optical components can be used, inexpensive and high-precision components can be used.

[0032] Such a processing device can perform processing with higher accuracy than when scanning a laser beam. Furthermore, since such a processing device can use a large-area mask, it is possible to increase the irradiation energy density in the processing area of ​​the substrate relative to the irradiation energy in the mask area, and therefore processing can be performed with a higher energy density.

[0033] The processing apparatus of the first aspect is preferably configured such that the mask and the substrate stage are synchronously operated in a plane direction approximately perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship, and that during processing of the substrate, the mask and the substrate stage are synchronously operated with the irradiation position of the laser beam fixed, and the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing of the processed area of ​​the substrate.

[0034] Such a processing device can perform processing with higher precision than when scanning a laser beam. Furthermore, since such a processing device can use a large-area mask, it is possible to increase the irradiation energy density in the processing area of ​​the substrate relative to the irradiation energy in the mask area, and therefore processing can be performed with a higher energy density.

[0035] The laser beam is preferably an excimer laser.

[0036] By using an excimer laser, it is possible to process more precise concave and convex shapes. In addition, because the excimer laser has good energy absorption efficiency in the processing material, it is possible to perform good ablation processing.

[0037] It is preferable that the apparatus further comprises a mask stage for holding the mask and for sweeping the mask.

[0038] A processing apparatus including such a mask stage can efficiently perform a mask sweeping operation.

[0039] The shaping optical system is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and whose irradiation energy density is uniform.

[0040] A processing apparatus including such an optical system is capable of shaping a high-quality laser beam having a rectangular beam profile with extremely uniform energy density.

[0041] The shaping optical system is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and a top hat shape.

[0042] A processing apparatus including such an optical system can irradiate a region to be processed on a substrate with a top-hat laser beam, which has a rectangular shape and an extremely uniform energy density.

[0043] The second optical function unit may be configured to further shape the irradiation shape of the laser beam that has passed through the first optical function unit through the mask.

[0044] The second optical function section can further shape the irradiation shape of the laser beam, which has been formed into a rectangular shape, according to a pattern corresponding to the region to be processed on the substrate, for example.

[0045] In the sweep irradiation in at least one direction, the mask and the substrate stage are preferably swept non-stop while the laser beam is pulse-irradiated onto the mask and the substrate stage.

[0046] By performing such a sweep, it is possible to significantly reduce the sweep time compared to a step-and-repeat operation in which running and stopping are repeated.

[0047] It is preferable that the apparatus further includes an imaging means for reading the characteristic portions of the substrate, an imaging means for reading the characteristic portions of the mask, and an alignment mechanism for aligning the relative positions of the substrate and the mask based on positional information of the characteristic portions of the substrate and the mask.

[0048] By providing these imaging means and alignment mechanisms, it becomes possible to perform uneven processing by projecting a mask pattern onto an accurate position on the substrate surface.

[0049] In this case, it is preferable that the apparatus further comprises means for correcting the processed shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism.

[0050] Such a processing device enables more accurate processing of concaves and convexes on a substrate.

[0051] It is preferable that the mask is installed in a direction substantially perpendicular to a horizontal surface on which the processing device is installed.

[0052] With this type of processing equipment, compared to conventional methods in which the mask is placed on a horizontal surface, the effects of mask bending can be suppressed, allowing for highly accurate uneven processing, and since dust is less likely to adhere to the mask surface, defects caused by dust are less likely to occur. Furthermore, since most of the long optical path can be aligned along a horizontal surface, the height of the equipment can be reduced.

[0053] The substrate may have a resist film, which is the object to be processed, on its surface.

[0054] The object to be processed by the processing apparatus of the present invention is not particularly limited, but can be, for example, a resist film formed on a substrate.

[0055] For example, the mask may have dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

[0056] The processing apparatus of the present invention may be equipped with a large mask, for example, having dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

[0057] For example, the effective area of ​​the mask may have dimensions of 500 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

[0058] The processing apparatus of the present invention may be equipped with a large mask, for example, whose effective area has dimensions of 500 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

[0059] It is preferable that the optical stage includes a first unit including the first optical function part, and a second unit detachable from the first unit, the second unit including the second optical function part and the substrate stage.

[0060] A processing apparatus including such detachable first and second units can be easily transported in separate parts, and installation costs can be reduced.

[0061] Preferably, the apparatus further comprises a vertical mask changer configured to exchange a plurality of the masks.

[0062] A processing device further equipped with such a vertical mask changer can easily form a variety of patterns. Furthermore, because multiple masks can be replaced while maintaining their vertical orientation, it is possible to prevent the accumulation of dust and other foreign matter on the masks and the masks from bending during mask replacement. Furthermore, it is possible to avoid the dangerous task of manually replacing very large masks, and it is possible to efficiently perform the frequent mask replacement work, thereby improving productivity.

[0063] It is preferable that the apparatus further includes a third optical function section provided with a reduction projection optical system between the second optical function section and the substrate stage.

[0064] By further including such a third optical function portion, the mask can be enlarged to be larger than the actual processing pattern, and the energy of the laser beam irradiated onto the mask can be made smaller than the processing energy irradiated onto the substrate. This suppresses thermal drift due to the energy of the laser beam, thereby suppressing thermal expansion of the mask and enabling high-precision processing even after long-term processing operations. Furthermore, since the mask can be made larger than the actual processing pattern, it is less susceptible to the effects of minute particles. Furthermore, this has the effect of extending the life of the mask. Furthermore, since the processing energy density irradiated onto the substrate can be improved, processing with a deep processing depth and a high aspect ratio can be performed.

[0065] It is preferable that the third optical function section further comprises a cooling means for cooling the reduction projection optical system.

[0066] With such a processing device, it is possible to further suppress thermal drift caused by the energy of the laser beam, and it is possible to perform high-precision processing even after a long processing operation.

[0067] Furthermore, since the stage does not have to be frequently moved and stopped as in step-and-repeat, the heat load on the stage can be suppressed and highly accurate positioning can be maintained for a long period of time.

[0068] The reduction projection optical system preferably includes a projection lens having an effective diameter of 150 mm or less.

[0069] Projection lenses with an effective diameter of 150 mm or less have the advantages of easy thermal management and little distortion. Furthermore, the use of such projection lenses can contribute to cost reduction. Even when equipped with a projection lens with an effective diameter of 150 mm or less, the processing apparatus of the present invention is capable of precisely processing uneven surfaces that are substantially uniform across the processing area of ​​a substrate.

[0070] Further, the present invention provides a processing method according to a first aspect, which is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to an area to be processed of the substrate, and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is smaller than the area to be processed of the substrate, The present invention provides a processing method in which, during processing of the substrate, the mask and the substrate stage are irradiated in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby processing the surface unevenness of the processing area of ​​the substrate.

[0071] With this processing method, it is possible to precisely process unevenness that is approximately uniform across the entire processing area of ​​the substrate. Therefore, with the processing method of this aspect, it is possible to precisely process fine unevenness across the entire processing area of ​​the substrate.

[0072] Furthermore, this type of processing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and high-precision processing can be performed.

[0073] Such a processing method allows high-speed and deep VIA processing and / or trench processing, and also allows high-density irradiation since the substrate irradiation area per shot can be made small.

[0074] The present invention also provides a second aspect of a processing method, which is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, in which a rectangularly shaped laser beam is passed through a mask to irradiate the substrate with the laser beam so that the substrate irradiation area becomes smaller than the processed area of ​​the substrate, and during the processing operation on the substrate, the surface irregularities of the processed area of ​​the substrate are processed while overlapping a portion of the substrate irradiation area.

[0075] This processing method makes it possible to precisely process unevenness that is almost uniform across the entire processing area of ​​the substrate, and therefore the processing device of this aspect can precisely process fine unevenness across the entire processing area of ​​the substrate.

[0076] Further, the present invention provides a processing method according to a third aspect, which is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to an area to be processed on the substrate, and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is made smaller than the area to be processed on the substrate; and operating the mask and the substrate stage synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relatively corresponding positional relationship; The present invention provides a processing method in which, during processing of the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby performing surface irregularity processing of the processing area of ​​the substrate.

[0077] With this processing method, it is possible to precisely process unevenness that is approximately uniform across the entire processing area of ​​the substrate. Therefore, with the processing method of this aspect, it is possible to precisely process fine unevenness across the entire processing area of ​​the substrate.

[0078] Furthermore, this processing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing. Furthermore, because small optical components can be used, inexpensive and high-precision components can be used.

[0079] This processing method allows for processing with higher precision than scanning with a laser beam, and also allows for the use of a large-area mask, which allows for processing with a higher energy density.

[0080] In the processing method of the first aspect, it is preferable that the mask and the substrate stage are moved synchronously in a plane direction approximately perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship, and that during the processing operation on the substrate, the mask and the substrate stage are moved synchronously with the irradiation position of the laser beam fixed, and the mask and the substrate stage are irradiated in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the processed region of the substrate.

[0081] This processing method allows for processing with higher precision than scanning a laser beam. Furthermore, this processing method also allows for the use of a large-area mask, which increases the irradiation energy density in the processing area of ​​the substrate relative to the irradiation energy in the mask area, thereby enabling processing with a higher energy density.

[0082] It is preferable to use an excimer laser as the laser beam.

[0083] By using an excimer laser, it is possible to process more precise irregularities. In addition, the excimer laser has good energy absorption efficiency in the processing material, making it possible to perform good ablation processing.

[0084] In the processing method of the first or third aspect, it is preferable to further use a mask stage that holds the mask and sweeps the mask.

[0085] In this way, the mask can be swept efficiently.

[0086] In the processing method of the first or third aspect, it is preferable to use a processing apparatus that further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

[0087] By using a processing device further including such a third optical function unit, the mask can be enlarged to be larger than the actual processing pattern, and as a result, the energy of the laser beam irradiated onto the mask can be made smaller than the processing energy irradiated onto the substrate. This suppresses thermal drift due to the energy of the laser beam, thereby suppressing thermal expansion of the mask and enabling high-precision processing even after long-term processing operations. Furthermore, since the mask can be made larger than the actual processing pattern, it is less susceptible to the effects of minute dust particles. Furthermore, this has the effect of extending the life of the mask. Furthermore, since the processing energy density irradiated onto the substrate can be improved, processing with a deep processing depth and a high aspect ratio can be performed.

[0088] In this case, it is preferable that the third optical function section further comprises a cooling means for cooling the reduction projection optical system.

[0089] By using such a third optical function portion, it becomes possible to perform high-precision processing even after a long processing operation.

[0090] It is preferable that the reduction projection optical system be equipped with a projection lens having an effective diameter of 150 mm or less.

[0091] Projection lenses with an effective diameter of 150 mm or less have the advantages of easy thermal management and little distortion. Furthermore, the use of such projection lenses can contribute to cost reduction. The processing method of the present invention is capable of precisely processing unevenness that is nearly uniform across the processing area of ​​a substrate, even when using a projection lens with an effective diameter of 150 mm or less.

[0092] In the processing method of the first or third aspect, it is preferable that an optical system including a plurality of cylindrical lenses is used as the shaping optical system, and the laser beam from the laser light source is shaped into a uniform laser beam having the rectangular irradiation shape.

[0093] In this way, it is possible to form a high-quality laser beam having a rectangular beam profile with extremely uniform energy density.

[0094] In the processing method of the first or third aspect, the irradiation shape of the laser beam that has passed through the first optical function part can be further shaped in the second optical function part through the mask.

[0095] The second optical function section can further shape the irradiation shape of the laser beam, which has been formed into a rectangular shape, according to a pattern corresponding to the region to be processed on the substrate, for example.

[0096] In the processing method of the first or third aspect, in the sweep irradiation in at least one direction, it is preferable that the mask and the substrate stage are swept non-stop while the laser beam is pulse-irradiated onto the mask and the substrate stage.

[0097] By performing such a sweep, it is possible to significantly reduce the sweep time compared to a step-and-repeat operation in which running and stopping are repeated.

[0098] Furthermore, since the stage does not have to be frequently moved and stopped as in step-and-repeat, the heat load on the stage can be suppressed and highly accurate positioning can be maintained for a long period of time.

[0099] In the processing method of the first or third aspect, the sweep irradiation can be repeated a plurality of times for each processing region of the substrate.

[0100] In this way, by repeating the sweep irradiation multiple times for each region to be processed and processing to the desired depth, high-speed processing can be performed.

[0101] Preferably, the processing method of the first or third aspect further includes: reading a characteristic portion of the substrate and a characteristic portion of the mask; and using an alignment mechanism to align the relative positions of the substrate and the mask based on position information of the characteristic portion of the substrate and the characteristic portion of the mask.

[0102] In this way, it becomes possible to perform uneven processing by projecting a mask pattern onto an accurate position on the substrate surface.

[0103] In this case, it is preferable that the method further includes correcting the processed shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism.

[0104] Such a processing method allows more accurate processing of concaves and convexes on the substrate.

[0105] In the processing method of the first or third aspect, it is preferable that the processing device used be one in which the mask is installed in a direction perpendicular to a horizontal plane on which the processing device is installed.

[0106] By using this type of processing equipment, the effects of mask bending can be suppressed compared to conventional methods in which the mask is placed on a horizontal surface, allowing for highly accurate uneven processing, and since dust is less likely to adhere to the mask surface, defects caused by dust are less likely to occur. Furthermore, since most of the long optical path can be aligned along a horizontal surface, the height of the equipment can be reduced.

[0107] For example, the substrate may have a resist film, which is the object to be processed, on its surface.

[0108] The object to be processed is not particularly limited, but for example, a resist film formed on a substrate can be the object to be processed.

[0109] For example, the mask may have dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

[0110] In the processing method of the present invention, in any of the first to third aspects, a large mask having dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction can be used.

[0111] In the processing method of the first or third aspect, the mask may have dimensions of 500 mm or more in the vertical and horizontal directions perpendicular to the thickness direction of the effective area.

[0112] In the first and third aspects of the processing method of the present invention, a large mask can be used in which the dimensions of the effective area in the vertical and horizontal directions perpendicular to the thickness direction are 500 mm or more, for example.

[0113] In the processing method of the first or third aspect, it is preferable to use, as the processing apparatus, one including: a first unit including the first optical function part; and a second unit detachable from the first unit, the second unit including the second optical function part and the substrate stage.

[0114] Such a processing device can be easily transported in parts, and the use of such a processing device can reduce installation costs.

[0115] In the processing method of the first or third aspect, it is preferable that the processing device further includes a vertical mask changer configured to exchange a plurality of the masks.

[0116] By using a processing device further equipped with such a vertical mask changer, various patterns can be easily formed. Furthermore, since multiple masks can be replaced while maintaining their vertical orientation, it is possible to prevent the accumulation of dust and other foreign matter on the masks and the masks from bending during mask replacement. Furthermore, it is possible to avoid the dangerous task of manually replacing very large masks, and it is possible to efficiently perform the frequent mask replacement work, thereby improving productivity.

[0117] As the fine irregularities, irregularities including a plurality of trenches can be formed.

[0118] The processing method of the present invention makes it possible to form unevenness including a plurality of trenches.

[0119] In this case, the plurality of trenches may have a cross section in which the distance between the bottoms of adjacent trenches is 110% or more of the average width of the bottoms.

[0120] The plurality of trenches may also have a depth of 20 μm or less, and a ratio of the depth to the average width of the bottom in the cross section of 1.0 or more.

[0121] Furthermore, the plurality of trenches may be formed such that the average width of the bottom of the cross section of the trench is 70% or more of the width of the opening at the surface of the substrate.

[0122] Furthermore, the plurality of trenches may have an opening width of 20 μm or less on the surface of the substrate.

[0123] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 1.1 or more.

[0124] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 1.5 or more.

[0125] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 2.4 or more.

[0126] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 3.4 or more.

[0127] Furthermore, the minute irregularities may further include a plurality of through holes.

[0128] In this case, a part of the plurality of trenches may be formed between adjacent through holes among the plurality of through holes.

[0129] Furthermore, the portions of the plurality of trenches may be formed to 40% or more of the width between the adjacent through holes.

[0130] In this way, the processing method of the present invention can form various irregularities.

[0131] Further, the present invention provides a first aspect of a method for manufacturing a substrate, which is a method for manufacturing a substrate having fine irregularities formed on its surface by ablation processing using irradiation energy of a laser beam, comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is smaller than the processing area of ​​the substrate, The method for manufacturing a substrate provides a method for processing the surface of a processing area of ​​the substrate by sweeping irradiation of the mask and the substrate stage while overlapping a portion of the substrate irradiation area during the processing operation on the substrate, thereby processing the surface of the processing area of ​​the substrate into irregularities.

[0132] Such a substrate manufacturing method makes it possible to precisely perform uniform uneven processing over the entire processing area of ​​the substrate, and therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0133] Furthermore, such a substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and it is possible to manufacture substrates that have been processed with high precision.

[0134] Such a substrate manufacturing method allows for high-speed, deep VIA processing and / or trench processing, and also allows for a small substrate irradiation area per shot, enabling high-density irradiation.

[0135] The present invention also provides a second aspect of a method for manufacturing a substrate, which is a method for manufacturing a substrate having fine irregularities formed on its surface by ablation processing using the irradiation energy of a laser beam, wherein the method forms fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, and comprises: passing a rectangular laser beam through a mask, irradiating the substrate with the laser beam so that the substrate irradiation area becomes smaller than the processed area of ​​the substrate; and during the processing operation on the substrate, overlapping a portion of the substrate irradiation area, the surface irregularities of the processed area of ​​the substrate are processed.

[0136] Such a substrate manufacturing method makes it possible to precisely perform uniform uneven processing over the entire processing area of ​​the substrate, and therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0137] Further, the present invention provides a third aspect of a method for manufacturing a substrate, which is a method for manufacturing a substrate having fine irregularities formed on its surface by ablation processing using irradiation energy of a laser beam, comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is made smaller than the processing area of ​​the substrate; and operating the mask and the substrate stage synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relatively corresponding positional relationship; The method for manufacturing a substrate provides that, during the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby processing the surface irregularities of the processed area of ​​the substrate.

[0138] Such a substrate manufacturing method makes it possible to precisely perform uniform uneven processing over the entire processing area of ​​the substrate, and therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0139] Furthermore, this type of substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, making it possible to manufacture substrates that have been processed with high precision. Furthermore, because small optical components can be used, inexpensive, high-precision components can be used.

[0140] Such a substrate manufacturing method allows for processing with higher precision than when a laser beam is scanned. Furthermore, such a processing method also allows for the use of a large-area mask, which increases the irradiation energy density in the processing area of ​​the substrate relative to the irradiation energy in the mask portion, thereby enabling processing with a higher energy density.

[0141] For example, the substrate may be a substrate for a semiconductor package.

[0142] The method for manufacturing a substrate of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages.

[0143] For example, a substrate having a resist film on its surface, which is the object to be processed, can be used.

[0144] The object to be processed is not particularly limited, but for example, a resist film formed on a substrate can be the object to be processed.

[0145] For example, the mask may have dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

[0146] In any of the first to third aspects of the substrate manufacturing method of the present invention, a large mask having dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction can be used.

[0147] In the substrate manufacturing method of the first or third aspect, for example, the mask may have dimensions of 500 mm or more in the vertical and horizontal directions perpendicular to the thickness direction of the effective area.

[0148] In the first and third aspects of the substrate manufacturing method of the present invention, a large mask can be used in which the dimensions of the effective area in the vertical and horizontal directions perpendicular to the thickness direction are 500 mm or more, for example.

[0149] In the substrate manufacturing method of the first or third aspect, it is preferable to use, as the processing device, one that includes: a first unit including the first optical function part; and a second unit that is detachable from the first unit and includes the second optical function part and the substrate stage.

[0150] Such a processing device can be easily transported in parts, and the use of such a processing device can reduce installation costs.

[0151] In the substrate manufacturing method of the first or third aspect, it is preferable that the processing device further includes a vertical mask changer configured to exchange a plurality of the masks.

[0152] A processing device further equipped with such a vertical mask changer can easily form a variety of patterns. Furthermore, because multiple masks can be replaced while maintaining their vertical orientation, it is possible to prevent the accumulation of dust and other foreign matter on the masks and the masks from bending during mask replacement. Furthermore, it is possible to avoid the dangerous task of manually replacing very large masks, and it is possible to efficiently perform the frequent mask replacement work, thereby improving productivity.

[0153] As the fine irregularities, irregularities including a plurality of trenches can be formed.

[0154] The method for manufacturing a substrate of the present invention makes it possible to form irregularities including a plurality of trenches.

[0155] In this case, the plurality of trenches may have a cross section in which the distance between the bottoms of adjacent trenches is 110% or more of the average width of the bottoms.

[0156] The plurality of trenches may also have a depth of 20 μm or less, and a ratio of the depth to the average width of the bottom in the cross section of 1.0 or more.

[0157] Furthermore, the plurality of trenches may be formed such that the average width of the bottom of the cross section of the trench is 70% or more of the width of the opening at the surface of the substrate.

[0158] Furthermore, the plurality of trenches may have an opening width of 20 μm or less on the surface of the substrate.

[0159] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 1.1 or more.

[0160] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 1.5 or more.

[0161] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 2.4 or more.

[0162] Furthermore, the plurality of trenches may have a ratio of the depth to the average width of the bottom in the cross section of 3.4 or more.

[0163] Furthermore, the minute irregularities may further include a plurality of through holes.

[0164] Furthermore, a part of the plurality of trenches can be formed between adjacent through holes among the plurality of through holes.

[0165] Furthermore, the portions of the plurality of trenches may be formed to 40% or more of the width between the adjacent through holes.

[0166] In this way, according to the method for manufacturing a substrate of the present invention, it is possible to manufacture substrates having various irregularities on the surface.

[0167] As described above, the processing apparatus of the present invention can accurately process minute concaves and convexes over the entire processing area of ​​the substrate.

[0168] Furthermore, the processing method of the present invention makes it possible to precisely process minute concaves and convexes over the entire processing area of ​​the substrate.

[0169] Furthermore, the substrate manufacturing method of the present invention makes it possible to manufacture a substrate on which minute concave and convex processing is formed with high precision over the entire processing area of ​​the substrate.

[0170] FIG. 1 is a schematic diagram showing an example of a processing apparatus of the present invention. FIG. 2 is a diagram showing an example of the relationship between a processing region of a substrate and a substrate irradiation area in the present invention. FIG. 3 is a diagram explaining an example of overlapping irradiation in one axial direction. FIG. 4 is a diagram explaining an example of overlapping irradiation from the first row to the third row. FIG. 5 is a conceptual diagram of shaping the irradiation shape of a laser beam in an example of a shaping optical system. FIG. 6 is a schematic perspective view of an example of a substrate to be processed. FIG. 7 is a schematic diagram showing an example of a mask. FIG. 8 is a schematic diagram showing an example of a processing apparatus equipped with a first unit and a second unit. FIG. 9 is a schematic diagram for explaining an example of a vertical mask changer. FIG. 10 is a schematic perspective view of an example of a reduction projection optical system. FIG. 11 is a schematic cross-sectional view showing an example of fine unevenness that can be formed by the present invention. FIG. 12 is a schematic cross-sectional view showing another example of fine unevenness that can be formed by the present invention.

[0171] As described above, there has been a demand for the development of a processing device that can accurately perform fine uneven processing over the entire processing area of ​​a substrate.

[0172] As a result of extensive research into the above-mentioned problems, the inventors have discovered that in processing to form fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, the substrate irradiation area irradiated with the laser beam in one shot is made smaller than the area to be processed of the substrate, and during the processing operation on the substrate, the mask and substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby processing the surface irregularities of the area to be processed of the substrate, and / or the mask and substrate stage are operated in synchronization with a fixed irradiation position of the laser beam, and the mask and substrate stage are swept and irradiated, thereby processing the surface irregularities of the area to be processed of the substrate, thereby making it possible to accurately process fine irregularities over the entire area to be processed of the substrate, and have completed the present invention.

[0173] That is, a first aspect of the processing apparatus of the present invention is a processing apparatus for forming fine irregularities on the surface of a substrate by ablation processing using irradiation energy of a laser beam, and includes: a first optical function unit having a laser light source that irradiates the laser beam in pulses and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit having a mask including an effective area having a pattern corresponding to the processing area of ​​the substrate; and a substrate stage that holds the substrate, wherein the mask includes a mask irradiation area onto which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a portion of the effective area of ​​the mask, and the substrate includes a substrate irradiation area onto which the pattern is projected by the laser beam that has passed through the mask, and the substrate irradiation area is smaller than the processing area of ​​the substrate, and the processing apparatus is configured to sweep-irradiate the mask and the substrate stage while overlapping a portion of the substrate irradiation area during a processing operation on the substrate, thereby processing the surface irregularities of the processing area of ​​the substrate.

[0174] A processing apparatus according to a second aspect of the present invention is a processing apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: a first optical function unit including a laser light source that irradiates the laser beam in pulses and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit that includes a mask including an effective area having a pattern corresponding to an area to be processed on the substrate; and a substrate stage that holds the substrate, wherein the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function unit, and the mask irradiation area is a part of the effective area of ​​the mask, and the substrate includes a substrate irradiation area onto which the pattern is projected by the laser beam that has passed through the mask, and the substrate irradiation area is smaller than the area to be processed on the substrate, and the mask and the substrate stage are configured to maintain a relatively corresponding positional relationship by operating synchronously in a plane direction that is approximately perpendicular to the direction in which the laser beam is irradiated, This processing device is configured to, during processing of the substrate, fix the irradiation position of the laser beam, operate the mask and the substrate stage in synchronization, sweep-irradiate the mask and the substrate stage, and perform surface irregularity processing of the processed area of ​​the substrate.

[0175] A processing method according to a first aspect of the present invention is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to an area to be processed of the substrate, and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is smaller than the area to be processed of the substrate, During a processing operation on the substrate, the mask and the substrate stage are irradiated with light in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby performing surface roughness processing on the processing area of ​​the substrate.

[0176] A second aspect of the processing method of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, in which a rectangularly shaped laser beam is passed through a mask to irradiate the substrate with the laser beam so that the substrate irradiation area becomes smaller than the processed area of ​​the substrate, and during the processing operation on the substrate, the surface irregularities of the processed area of ​​the substrate are processed while overlapping a portion of the substrate irradiation area.

[0177] A processing method according to a third aspect of the present invention is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to an area to be processed on the substrate, and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is made smaller than the area to be processed on the substrate; and operating the mask and the substrate stage synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relatively corresponding positional relationship; During the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby performing surface irregularity processing on the processing area of ​​the substrate.

[0178] A first aspect of the present invention provides a method for manufacturing a substrate having fine irregularities formed on its surface by ablation processing using irradiation energy of a laser beam, the method comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system; a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate; and a substrate stage for holding the substrate; in the first optical function unit, irradiating the laser beam from the laser light source to the shaping optical system in a pulsed manner to form an irradiation shape of the laser beam into a rectangular shape; in the second optical function unit, irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, wherein the substrate irradiation area is smaller than the processing area of ​​the substrate, This is a method for manufacturing a substrate, in which, during a processing operation on the substrate, the mask and the substrate stage are irradiated in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby processing the surface irregularities of the processing area of ​​the substrate.

[0179] Furthermore, a second aspect of the present invention relates to a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, and is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, in which a rectangularly shaped laser beam is passed through a mask to irradiate the substrate with the laser beam so that the substrate irradiation area becomes smaller than the processed area of ​​the substrate, and during the processing operation on the substrate, the surface irregularities are processed in the processed area of ​​the substrate while overlapping a portion of the substrate irradiation area.

[0180] A third aspect of the present invention provides a method for manufacturing a substrate having fine irregularities formed on its surface by ablation processing using irradiation energy of a laser beam, the method comprising: preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage for holding the substrate; the first optical function unit irradiating the laser beam from the laser light source to the shaping optical system in pulses to form an irradiation shape of the laser beam into a rectangular shape; the second optical function unit irradiating a mask irradiation area, which is a part of the effective area of ​​the mask, with the laser beam that has passed through the first optical function unit; and irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, the substrate irradiation area being smaller than the processing area of ​​the substrate; and operating the mask and the substrate stage synchronously in a plane direction substantially perpendicular to the direction of irradiation of the laser beam, thereby maintaining a relatively corresponding positional relationship; This is a method for manufacturing a substrate, in which, during the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby processing the surface irregularities of the processed area of ​​the substrate.

[0181] The present invention will be described in detail below, but the present invention is not limited thereto.

[0182] [Processing Apparatus] Fig. 1 is a schematic diagram showing an example of a processing apparatus of the present invention. The processing apparatus 100 shown in Fig. 1 is a processing apparatus for forming fine irregularities on the surface of a substrate 80 by ablation processing using the irradiation energy of a laser beam 4.

[0183] The processing apparatus 100 shown in FIG. 1 includes a first optical function unit 10 , a second optical function unit 20 , and a substrate stage 40 that holds a substrate 80 .

[0184] The first optical function unit 10 includes a laser light source (laser oscillator) 11 that irradiates (emits) a pulsed laser beam 1, and a shaping optical system 12 that receives the laser beam 1 from the laser light source 11. The shaping optical system 12 shapes the irradiation shape of the laser beam 1, for example, as shown in Fig. 1(a), into a rectangular irradiation shape, for example, as shown in Fig. 1(b). The laser beam 2 having a rectangular irradiation shape can exhibit a uniform irradiation energy density, and has a beam profile that exhibits, for example, a top-hat shape.

[0185] The second optical function unit 20 includes a mask 21. The mask 21 includes an effective area 22 having a pattern corresponding to the region of the substrate 80 to be processed.

[0186] The mask 21 includes a mask irradiation area that is irradiated with the laser beam 2 that has passed through the first optical function portion 10. This mask irradiation area is a part of an effective area 22 of the mask 21.

[0187] The laser beam 3 having the irradiation shape shown in Fig. 1(c) passes through the second optical function unit 20, and its traveling direction is changed by an optional folding mirror 50 as shown in Fig. 1(d), and it is incident on an optional third optical function unit 30 (described later). The processing apparatus 100 shown in Fig. 1 is configured so that the laser beam 4 emitted from the third optical function unit 30 is irradiated onto a portion of a substrate 80 held on a substrate stage 40.

[0188] The substrate 80 includes a substrate illumination area onto which a pattern is projected by the laser beam passing through the mask 21 (and optional third optical function 30).

[0189] 2 shows an example of the relationship between a substrate irradiation area 90 on the substrate 80 where the laser beam 4 is irradiated and a processing region 81 on the substrate 80. As shown in FIG. 2, the substrate irradiation area 90 is smaller than the processing region 81 on the substrate 80.

[0190] 2 is an area irradiated by one shot of the pulsed laser beam 4. In addition, since the pattern is projected onto the substrate irradiation area 90 by the laser beam that has passed through the mask 21, the substrate irradiation area 90 corresponds to a mask irradiation area that is a part of the effective area 22 of the mask 21.

[0191] In the example of Fig. 1, the mask 21 is configured to be scanned along sweep axes 21X and 21Y shown in Fig. 1. Furthermore, the substrate stage 40 is configured to be scanned along sweep axes 80X and 80Y shown in Fig. 1.

[0192] The processing apparatus 100 of the present invention is configured to sweep and irradiate the mask 21 and the substrate stage 40 with the laser beam 4, and perform surface roughness processing of the processing area 81 of the substrate 80.

[0193] Furthermore, the processing apparatus 100 of the present invention is configured to perform superimposed irradiation (first embodiment), and / or to perform synchronous sweep irradiation while fixing the irradiation position of the laser beam (second embodiment), as described in detail below.

[0194] [First Aspect] The processing apparatus 100 of the first aspect is configured to, during processing of the substrate 80, sweep-irradiate the mask 20 and the substrate stage 80 while overlapping a portion of the substrate irradiation area 90, thereby processing the surface irregularities of the processing area 81 of the substrate 80. Hereinafter, irradiating the laser beam while overlapping a portion of the substrate irradiation area 90 is referred to as overlapping irradiation.

[0195] Next, an example of overlapping irradiation will be described with reference to FIGS.

[0196] 3A shows a substrate irradiation area 90 on a substrate 80 irradiated with one pulsed laser beam. In this example of overlapping irradiation, the mask 20 and substrate stage 80 are swept, and the laser beam is irradiated so that the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot partially overlap in the direction of the arrow along the sweep axis 80X, as shown in FIG. 3B. Subsequently, the laser beam is irradiated so that the substrate irradiation area 93 of the third shot partially overlaps the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot. By repeating this overlapping irradiation from the fourth shot onwards, the processing area expands along the sweep axis 80X.

[0197] 4(a) shows a process of ablating the first row of the processing area 81 along the sweep axis 80X using the overlapping irradiation shown in FIG. 3(b). Next, as shown in FIG. 4(b), overlapping irradiation is performed along the sweep axis 80X so as to overlap a portion of the area overlapping irradiation performed in FIG. 4(a) in the direction of the sweep axis 80Y (orthogonal to the sweep axis 80X), and the second row of the processing area 81 is ablated along the sweep axis 80X. Next, as shown in FIG. 4(c), overlapping irradiation is performed along the sweep axis 80X so as to overlap a portion of the area overlapping irradiation performed in FIGS. 4(a) and (b) in the direction of the sweep axis 80Y, and the third row of the processing area 81 is ablated along the sweep axis 80X. By repeating this overlapping irradiation for the fourth and subsequent rows of the processing area 81, the processing area expands across the processing area 81. As a result, overlapping irradiation can be performed at regular intervals in the two directions of the sweep axes 80X and 80Y.

[0198] The overlapping portions of the substrate irradiation areas are irradiated with the laser beam multiple times, resulting in deep ablation processing in those portions according to the mask pattern shape, thereby achieving the target processing depth required for the processing region 81 according to the mask pattern shape.

[0199] In the processing apparatus 100 of the first aspect, a pulsed, rectangular laser beam with a uniform irradiation energy density is converted into a processing shape through a mask 21 and the laser beam 4 is irradiated onto a substrate irradiation area 90 of a substrate 80. Therefore, it is possible to perform multiple irradiations with a uniform processing depth in the substrate irradiation area 90 in the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, and it is possible to accurately process unevenness with approximately uniformity across the processing area 81 of the substrate 80. Therefore, with this processing apparatus 100, it is possible to accurately process fine unevenness across the processing area 81 of the substrate 80.

[0200] Furthermore, such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and high-precision processing can be performed.

[0201] Furthermore, since the processing device 100 can irradiate the substrate with the laser beam 4 in a pulsed manner, the above-mentioned superimposed irradiation can be performed at high speed.

[0202] That is, the processing apparatus 100 according to the first aspect of the present invention can perform deep VIA processing and / or trench processing at high speed.

[0203] Furthermore, with the processing apparatus 100 according to the first aspect of the present invention, the area of ​​the substrate irradiated with one shot can be made smaller because overlapping irradiation is performed, thereby enabling high-density irradiation.

[0204] [Second Aspect] The processing apparatus 100 of the second aspect is configured so that the mask 21 and the substrate stage 40 maintain a relative corresponding positional relationship by operating synchronously in a plane direction approximately perpendicular to the direction in which the laser beams 2 and 4 are irradiated.

[0205] In the example of FIG. 1, the mask 21 is configured such that the movement of the mask 21 along the sweep axis 21X is synchronized with the movement of the substrate stage 80 along the sweep axis 80X, and the movement of the mask 21 along the sweep axis 21Y is synchronized with the movement of the substrate stage 80 along the sweep axis 80Y, so that the mask 21 and the substrate stage 40 maintain a relative corresponding positional relationship.

[0206] Furthermore, the processing apparatus 100 of the second embodiment is configured to, during processing of the substrate 80, operate the mask 21 and the substrate stage 40 in synchronization with a fixed irradiation position of the laser beam 4, sweep-irradiate the mask 21 and the substrate stage 40, and perform surface unevenness processing of the processing area 81 of the substrate 80. Such sweep-irradiation that can be performed by the processing apparatus 100 of the second embodiment is hereinafter referred to as "synchronous sweep-irradiation with a fixed irradiation position of the laser beam."

[0207] Such synchronous sweep irradiation allows for processing with higher accuracy than scanning a laser beam. Furthermore, with such processing apparatus 100, a large-area mask can be used as mask 21, and processing can be performed at a higher energy density by using the large-area mask in combination with the third optical function unit 30, which will be described later.

[0208] Furthermore, in the processing apparatus 100 of the second embodiment, similarly to the processing apparatus 100 of the first embodiment, a pulsed, rectangular laser beam with a uniform irradiation energy density is converted into a processing shape through a mask 21 and the laser beam 4 is irradiated onto a substrate irradiation area 90 of a substrate 80. Therefore, similarly to the first embodiment, the processing apparatus 100 of the second embodiment can perform multiple irradiations with a uniform processing depth in the substrate irradiation area 90 in the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, and can accurately perform processing of approximately uniform concave-convex shapes across the processing area 81 of the substrate 80. Therefore, with this processing apparatus 100, fine concave-convex shapes can be accurately processed across the processing area 81 of the substrate 80.

[0209] Furthermore, such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing. Furthermore, because small optical components can be used, inexpensive, high-precision components can be used.

[0210] In addition, the processing apparatus 100 of the first aspect is preferably configured to perform, in addition to the superimposed irradiation described above, synchronous sweep irradiation with the laser beam irradiation position fixed, as in the second aspect.

[0211] Optional features of each component of the processing apparatus 100 of the present invention will be described below.

[0212] [First Optical Function Unit 10] The laser beam 1 emitted from the laser light source 11 is preferably an excimer laser.

[0213] Excimer lasers have a shorter wavelength than conventional solid-state lasers, such as laser diode pumped solid-state (DPSS) lasers, and therefore offer higher resolution. Therefore, using an excimer laser allows for more precise uneven processing. Furthermore, excimer lasers have very high absorption and high processing capabilities for, for example, epoxy-based substrate materials. Furthermore, excimer lasers have low coherency and are less likely to produce interference fringes, allowing for the formation of a very uniform flat-top beam pattern. This allows for uniform processing depth through ablation.

[0214] The shaping optical system 12 is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam 1 from the laser light source 11 into a laser beam having a rectangular irradiation shape and a uniform irradiation energy density, particularly a top-hat shaped laser beam.

[0215] FIG. 5 shows a conceptual diagram of shaping the irradiation shape of a laser beam in a shaping optical system equipped with a plurality of cylindrical lenses.

[0216] The shaping optical system 12 shown in Fig. 5 includes a plurality of cylindrical lenses, including an X1 cylindrical lens 13, a Y1 cylindrical lens 14, an X2 cylindrical lens 15, and a Y2 cylindrical lens 16, and a condenser lens 17. The X1 cylindrical lens 13 and the X2 cylindrical lens 15 are spaced apart at a distance twice their focal length f1, as shown in the lower part of Fig. 5. The Y1 cylindrical lens 14 and the Y2 cylindrical lens 16 are also spaced apart at a distance twice their focal length f1.

[0217] The laser beam 1 emitted by the laser light source 11 shown in FIG. 1 has a non-uniform irradiation shape (beam profile) as shown in FIG. 5. When the laser beam 1 having such an irradiation shape enters the shaping optical system 12, each component of the laser beam 1 is shaped according to its position in the X and Y directions. The lower part of FIG. 5 schematically shows, for example, how the component indicated by "2" is shaped as it passes through cylindrical lenses 14 and 16. Each component of the laser beam 1 is shaped by the cylindrical lenses 13 to 16 and focused at a position a focal length f2 away from the focusing lens 17. By focusing each component, a laser beam 2 having a top-hat beam shape as shown in FIG. 5 is formed, and is emitted from the shaping optical system 12 as output light.

[0218] By rearranging the configuration of the cylindrical lenses in the X and Y directions, it is possible to form the beam into a square, rectangular or other shape.

[0219] By using such multiple cylindrical lenses 13 to 16 to shape the irradiation shape of the laser beam 1, it is possible to shape a high-quality laser beam 2 having a rectangular shape with extremely uniform energy density, particularly a top-hat type beam profile.

[0220] In particular, in the processing apparatus 100 of the first aspect, by performing superimposed irradiation using such a rectangular beam profile, there are no dead spots, which are areas that are not irradiated, and uneven processing that is averaged within the tolerance range of the target processing can be performed, making it possible to perform uneven processing of the substrate 80 extremely efficiently.

[0221] [Second Optical Function Unit 20] The second optical function unit 20 preferably further includes a mask stage that holds the mask 21 and sweeps the mask 21. By attaching a sweep axis to the mask stage that holds the mask 21, it is possible to efficiently sweep the mask.

[0222] Furthermore, by providing the mask stage with a correction function (tilt axis, θ axis), correction can be easily made to the surface shape of the substrate 80 to be processed, thereby enabling accurate processing.

[0223] The second optical function unit 20 can further shape the irradiation shape of the laser beam 2 that has passed through the first optical function unit 10 through a mask 21. The second optical function unit 20 can further shape the irradiation shape of the laser beam 2 that has been formed into a rectangular shape, for example, according to a pattern corresponding to the processing area 81 of the substrate 80.

[0224] It is preferable that the mask 21 be installed in a direction substantially perpendicular to the horizontal surface on which the processing apparatus 100 is installed.

[0225] As mentioned above, the substrate processing size is required to be larger, and accordingly the mask size is also increasing. Furthermore, when a reduction projection optical system is used, the mask size becomes even larger.

[0226] On the other hand, the resolution of the uneven processing on the substrate is increasing, and distortion in the mask image affects the processing accuracy.

[0227] When the mask is installed horizontally in the same direction as the horizontal surface on which the apparatus is installed, as in Patent Document 2, if the mask is installed alone, its gravity will cause distortion, which will deteriorate the processing accuracy. Furthermore, if the mask is made thicker to reduce bending, the mask will become very heavy, which will make it difficult to replace.

[0228] When a support is placed under the mask to prevent bending, the support needs to be optically transparent. However, as the mask becomes larger, the support material needs to be thicker, which not only creates cost problems but also increases the absorption of laser energy in the support material, reducing the energy efficiency of the laser irradiation.

[0229] Furthermore, if the mask is placed on a horizontal surface, there is a greater risk of dust getting on the mask, and if production continues with dust on it, it will cause quality defects in a large number of products.

[0230] Furthermore, if dust gets between the mask and the support material below the mask, not only can it cause product defects or damage to the mask, but the refractive index differs in the small gap that occurs between the support material and the mask, causing optical non-uniformity, which results in an uneven laser beam being emitted.

[0231] Furthermore, since the optical path from the laser light source to the substrate is long, if the mask is placed horizontally, the height of the device becomes large. By placing the mask upright, the height of the device can be reduced.

[0232] As in this preferred example, if the mask 21 is installed in a direction approximately perpendicular to the horizontal surface on which the processing device 100 is installed, the mask 21 will not bend, and there is no need for support to prevent bending using an optically transparent material, so the efficiency of laser energy usage is high and processing can be performed with high precision and extremely uniformity.

[0233] In the processing apparatus 100 of the present invention, the irradiation area of ​​the laser beam 3 that has passed through the mask 21 can be reduced using an optional reduction projection optical system 31, which will be described below, to increase the energy density of the laser beam 4 that is irradiated onto the substrate. Therefore, even if the mask 21 is large and has a large area, the desired fine uneven processing can be achieved by using a reduction projection optical system 31 that matches the mask 21.

[0234] There is no particular limitation on the size of the mask 21. For example, a mask 21 having an outer dimension of 700 mm x 800 mm and an effective area 22 of 600 mm x 600 mm can be used. Other specific examples of masks will be described later.

[0235] [Third Optical Function Unit 30] As in the processing apparatus 100 shown in Figure 1, it is preferable to further include a third optical function unit equipped with a reduction projection optical system 31 between the second optical function unit 20 and the substrate stage 40.

[0236] In recent years, substrate processing has become increasingly finer, requiring a minimum processing width of several microns. This also has an effect on minute dust particles, and minute dust particles adhering to the mask portion in particular can cause a large number of processing defects. Therefore, the mask 21 is enlarged larger than the actual processing area, and the laser beam 3 that passes through the mask 21 is subjected to reduced projection exposure using a reduced projection optical system 31 at the subsequent stage, thereby minimizing the effect of minute dust particles.

[0237] Furthermore, by enlarging the mask 21 more than the actual processing pattern, the energy of the laser beam 2 that strikes the mask 21 can be made smaller than the processing energy. If the reduction magnification of the reduction projection optical system 31 is N, the energy of the laser beam that strikes the mask surface is 1 / (N ２ ) As a result, it is possible to suppress the thermal drift caused by the energy of the laser beam 2, thereby suppressing the thermal expansion of the mask 21 and enabling high-precision processing even after a long processing operation.

[0238] Furthermore, deterioration of optical components (for example, the shaping optical system 12 and the mask 21) due to the heat of the laser beam can be suppressed, so the life of the optical components can be extended.

[0239] Furthermore, the processing apparatus 100 configured to perform synchronous sweep irradiation while the irradiation position of the laser beam is fixed as described above can use a reduced projection lens with a very small aperture compared to the method of moving the irradiation position of the laser beam, such as that of Patent Document 2. This is advantageous in terms of cost, and since there is little distortion of the lens and aberration caused by the lens can be reduced, the processing precision of the substrate can be made very high.

[0240] The reduction projection optical system 31 can include a pair of reduction projection lenses. When the reduction projection optical system 31 is an infinity optical system, the magnification achieved by the reduction projection optical system 31 can be adjusted, for example, by adjusting the ratio of the focal lengths of the reduction projection lenses and the distance between the reduction projection lenses.

[0241] The reduction projection lens preferably has a high NA (numerical aperture). By using a reduction projection lens with a high NA, vias and trenches that are closer to cylindrical shapes can be formed.

[0242] The NA of the reduction projection lens is preferably selected in accordance with the energy density required for processing the substrate 80. The NA of the reduction projection lens is preferably 0.12 or greater.

[0243] It is preferable that the third optical function unit 30 further includes a cooling unit for cooling the reduction projection optical system 31 .

[0244] By providing a cooling means, it is possible to further suppress the influence of heat due to the laser beam energy in the reduction projection optical system 30. In the reduction projection optical system 30, the laser beam 3 that has passed through the mask 21 is reduced and projected at 1 / N, so the energy of the laser beam that passes through the lens portion at the tip of the objective is N times less than the energy of the laser beam irradiated on the mask 21. ２ Therefore, by providing a cooling function to the reduction projection optical system 30 in order to suppress this thermal energy, it is possible to suppress the thermal drift caused by the energy of the laser beam, and it becomes possible to perform high-precision processing even after a long processing operation.

[0245] Furthermore, the processing apparatus 100 configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed, as described above, allows the use of a reduction projection lens with a much smaller diameter than the method described in Patent Document 2. The cooling means for the reduction projection lens is not directly attached to the lens itself, but rather cools the jacket portion that holds the lens. Therefore, when the lens diameter is large, while temperature control is possible around the periphery of the lens, the cooling effect is less widespread near the crucial central portion, making heat management difficult. Therefore, even a small amount of energy absorbed into the lens due to long-term laser beam irradiation is likely to cause thermal distortion. If the third optical function unit 30 has a cooling function, the lens diameter can be reduced, thereby reducing such problems.

[0246] Furthermore, it is possible to prevent defects caused by irradiation of the reduction projection optical system 31 with a laser beam, thereby extending its lifespan.

[0247] [Sweeping mechanism] The processing apparatus 100 is preferably configured to sweep the mask 21 and the substrate stage 40 non-stop while irradiating the mask 21 and the substrate stage 40 with pulsed laser beams 2 and 4, respectively, in a sweeping irradiation in at least one direction.

[0248] By performing non-stop sweep irradiation, it is possible to significantly reduce the sweep time compared to step-and-repeat operation, which repeats running and stopping. In particular, since there is no need to perform positioning when stopping from a running state, it is possible to prevent deterioration of position accuracy due to acceleration and deceleration.

[0249] Furthermore, because these operations occur frequently, repeated stops and starts place a heavy load on the travel axis and motor.By performing non-stop sweep irradiation operations, the load on the axis can be reduced and heat generation in the travel axis can be suppressed, further preventing deterioration of positional accuracy due to thermal drift and enabling extremely high-precision substrate unevenness processing.

[0250] [Imaging means and alignment mechanism] It is preferable that the processing apparatus 100 of the present invention further includes an imaging means for reading characteristic portions of the substrate 80, an imaging means for reading characteristic portions of the mask 21, and an alignment mechanism for aligning the relative positions of the substrate and the mask based on positional information of the characteristic portions of the substrate and the mask.

[0251] 1 includes a mask alignment camera 23 as an imaging means for reading characteristic portions of the mask 21, a substrate alignment camera 60 as an imaging means for reading characteristic portions of the substrate 80, and an alignment mechanism (not shown). The mask alignment camera 23 is configured to send position information of the characteristic portions of the mask 21 to the alignment mechanism. The substrate alignment camera 60 is configured to send position information of the characteristic portions of the substrate 80 to the alignment mechanism. The alignment mechanism is configured to adjust the relative positions of the substrate 80 and the mask 21 based on this position information.

[0252] By aligning the position of the mask 21 with the position of the substrate 80 using the imaging means, it is possible to perform uneven processing by projecting the mask pattern onto the surface of the substrate 80 at an accurate position.

[0253] In particular, boards are often processed across multiple layers, and if the processing position of each layer is not precisely aligned with the target position, the circuits on each layer will not be connected, or even if they are connected, there will be high conduction resistance and other quality defects. To prevent this, precision in the processing position is necessary.

[0254] In this case, it is preferable to further include a means for correcting the processed shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism.

[0255] The shape of the projected image of the pattern on the mask 21 is not necessarily exactly similar to the processed shape of the substrate 80, and the magnification is not always the same due to the influence of thermal expansion, etc. Furthermore, there are cases where it becomes necessary to deform the processed shape on the substrate 80 relative to the projected image of the mask 21 due to minute distortion or deformation of the substrate 80.

[0256] Therefore, as described above, the positions of the mask 21 and the substrate 80 are acquired by imaging means (mask alignment camera 23 and substrate alignment camera 60), and based on this information, the projected image of the mask 21 is aligned with the shape of the substrate to be processed, thereby enabling accurate processing of recesses and protrusions on the substrate.

[0257] Specifically, for example, the projection position of the projection image of the mask 21 is acquired by the beam image detection camera 70, and correction is made based on the information on this projection position to optimize the projection magnification by the third optical function unit 30, and the sweep speed during sweep irradiation is also optimized based on the information. This makes it possible to arbitrarily change the vertical and horizontal magnifications of the substrate 80 relative to the image of the mask 21 within a certain range, and to apply an optimal substrate processing shape.

[0258] [Processing Method] The processing method of the first aspect of the present invention is a method of performing the above-described superimposed irradiation using the processing apparatus 100 of the first aspect. Therefore, according to the processing method of the first aspect of the present invention, it is possible to accurately perform fine uneven processing over the entire processing area of ​​the substrate. In addition, it is possible to perform irradiation at a high energy density, and to perform high-speed, deep VIA processing and / or trench processing.

[0259] The processing method of the present invention is not limited to a method using the processing apparatus 100 of the first embodiment.

[0260] For example, the processing method of the second aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, in which a rectangularly shaped laser beam is passed through a mask to irradiate the substrate with the laser beam so that the substrate irradiation area is smaller than the area to be processed on the substrate, and during the processing operation on the substrate, the surface irregularities of the area to be processed on the substrate are processed while overlapping a portion of the substrate irradiation area.

[0261] In this processing method, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processing area of ​​the substrate, and the surface unevenness processing of the processing area of ​​the substrate is performed while overlapping a portion of the substrate irradiation area, i.e., overlapping irradiation is performed, so it is possible to accurately perform almost uniform unevenness processing over the processing area of ​​the substrate. Therefore, with this type of processing device, it is possible to accurately perform fine unevenness processing over the processing area of ​​the substrate.

[0262] In the processing method according to the second aspect of the present invention, the use of an excimer laser enables more precise processing of irregularities.

[0263] Alternatively, a processing method according to a third aspect of the present invention is a method of performing synchronous sweep irradiation while fixing the irradiation position of the laser beam described above using the processing apparatus 100 according to the second aspect. Therefore, according to the processing method according to the third aspect of the present invention, it is possible to accurately process fine irregularities across the entire processing area of ​​the substrate. Furthermore, according to the processing method according to the third aspect, processing can be performed with higher accuracy than when scanning the laser beam. Furthermore, with this processing method, a large-area mask can be used as the mask 21, and by using the large-area mask in combination with the third optical function unit 30 described above, processing can be performed with a higher energy density.

[0264] It is particularly preferable to perform both the superimposed irradiation and the synchronous sweep irradiation while the irradiation position of the laser beam is fixed during the processing operation on the substrate.

[0265] In the processing method of the first or third aspect of the present invention, it is preferable to use a processing apparatus 100 that satisfies one or more of the optional conditions described above.

[0266] Furthermore, in the processing method of the first or third aspect of the present invention, in the sweep irradiation in at least one direction, it is preferable to sweep the mask 21 and the substrate stage 40 non-stop while irradiating the mask 21 and the substrate stage 40 with pulsed laser beams 2 or 4, respectively.

[0267] By performing such a sweep, it is possible to significantly reduce the sweep time compared to the step-and-repeat operation in which running and stopping are repeated, for the reasons explained above.

[0268] In the processing method according to the first or third aspect of the present invention, it is preferable to repeat the sweep irradiation a plurality of times for each processing region 81 of the substrate 80 .

[0269] As mentioned above, although high precision is required for the processing of recesses and protrusions on a substrate, there is also a demand for high aspect ratio processing, that is, for the depth to be increased.

[0270] However, the depth that can be processed in one sweep (one pass) is limited, and particularly in the processing by the non-stop sweep, it is not possible to irradiate a portion to be processed in one pass multiple times.

[0271] Therefore, by irradiating the laser pulse while sweeping and performing this multiple times for each processing region 81 of the substrate 80, processing can be performed to the desired depth, and high-speed processing can be performed.

[0272] In addition, between each sweep operation (first sweep, second sweep, ...), as explained with reference to Figures 3 and 4, by shifting the substrate irradiation area 90 and performing irradiation for each sweep, the processing depth is averaged, and processing to a uniform depth can be performed.

[0273] In the processing method of the first or third aspect, it is preferable that the method further includes reading the characteristic portions of the substrate 80 and the characteristic portions of the mask 21, and using an alignment mechanism to align the relative positions of the substrate 80 and the mask 21 based on positional information of the characteristic portions of the substrate 80 and the characteristic portions of the mask 21.

[0274] The characteristic portions of the substrate 80 can be read by, for example, the substrate alignment camera 60. The characteristic portions of the mask 21 can be read by, for example, the mask alignment camera 23.

[0275] By aligning the position of the mask 21 with the position of the substrate 80 using an alignment mechanism based on the information obtained by the alignment cameras 23 and 60, it is possible to perform uneven processing by projecting the mask pattern onto the exact position on the surface of the substrate 80.

[0276] In this case, it is preferable to further include correcting the processed shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism.

[0277] This processing method enables more accurate processing of concaves and convexes on the substrate. Such correction can be performed by combining, for example, the third optical function unit 30, the beam image detection camera 70, a sweeping mechanism for the mask 21, and a sweeping mechanism for the substrate stage 80.

[0278] [Substrate Manufacturing Method] In the substrate manufacturing method of the present invention, a substrate is processed by the processing method of the present invention.

[0279] With this type of substrate manufacturing method, it is possible to perform multiple irradiations with uniform processing depths in the substrate irradiation area within the substrate corresponding to the mask irradiation area, which is a portion of the effective area of ​​the mask, and therefore it is possible to precisely perform roughly uniform uneven processing over the entire processing area of ​​the substrate. Therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0280] Furthermore, such a substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and it is possible to manufacture substrates that have been processed with high precision.

[0281] In particular, in the case of a substrate manufacturing method using the processing method of the first aspect, the superimposed irradiation is performed during the substrate processing operation, so that high-speed deep VIA processing and / or trench processing can be performed. Furthermore, since the substrate irradiation area in one shot can be made small, high-density irradiation becomes possible.

[0282] Furthermore, in the substrate manufacturing method using the processing method of the third aspect, the synchronous sweep irradiation is performed with the laser beam irradiation position fixed during the substrate processing operation, so processing can be performed with higher precision than in the case of scanning the laser beam. Furthermore, with this processing method, a large-area mask can be used, so processing can be performed with a higher energy density.

[0283] The method for manufacturing a substrate of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages.

[0284] More specific embodiments of the present invention will now be described.

[0285] [Substrate] The substrate to be subjected to ablation surface processing according to the present invention is not particularly limited, and may be, for example, a substrate having a resist film on its surface to be processed.

[0286] Fig. 6 is a schematic perspective view of an example of a substrate to be processed. The substrate 80 shown in Fig. 6 has an underlying substrate 80A and a resist film 80B on the surface of the underlying substrate 80A. In other words, the substrate 80 is a substrate having, on its surface, the resist film 80B to be processed.

[0287] In the present invention, the material of the resist film is not particularly limited, and examples thereof include solder resists (photo- or thermosetting), electroforming resists, and circuit-forming resists (etching resists (resists for pattern etching of patterned electrode materials such as copper, and tenting resists for forming electrode materials such as copper around holes), and plating resists).

[0288] The method for forming the resist film can be appropriately selected depending on the resist material and the purpose of the resist film. For example, a liquid resist material may be applied, or a film-like resist material may be laminated on the substrate 80A.

[0289] The method for curing the resist material depends on the resist material. For example, the resist material can be cured by thermal curing or photocuring.

[0290] The resist does not necessarily have to be photosensitive for fine patterning because the surface is processed to have fine irregularities using the processing apparatus of the present invention. However, the resist may have photosensitivity when photosensitive patterning and fine processing using the processing apparatus are used in combination. On the other hand, a curable material may be used to improve durability against post-processing steps (plating, etching, etc.).

[0291] The resist film can also be called an organic film or a resin film.

[0292] A specific example of the processing method or substrate manufacturing method according to the present invention when the processing object is a resist film will be described below.

[0293] [Specific Example 1] (1) Formation of a resist film; (2) Hardening of a resist material (thermal hardening or photohardening); (3) Ablation processing by laser beam irradiation; (4) Post-processing.

[0294] [Specific Example 2] (1) Formation of a resist film; (2) Ablation processing by laser beam irradiation; (3) Hardening of the resist material (thermal hardening or photohardening); (4) Post-treatment.

[0295] [Specific Example 3] (1) Formation of a resist film; (2) Ablation processing by laser beam irradiation; (3) Patterning using photosensitivity; (4) Development; (5) Post-treatment.

[0296] [Specific Example 4] (1) Formation of a resist film; (2) Patterning using photosensitivity; (optional) Development; (3) Ablation processing by laser beam irradiation; (optional) Development; (4) Post-treatment.

[0297] [Mask] In the above description, a mask having an outer dimension of 700 mm × 800 mm and an effective area of ​​600 mm × 600 mm was used as an example. However, in another aspect, the present invention can use a mask 21 having, for example, vertical and horizontal dimensions perpendicular to the thickness direction (dimensions 21a and 21b, respectively, in FIG. 7 ) of 700 mm or more, and vertical and horizontal dimensions perpendicular to the thickness direction of the effective area 22 (dimensions 22a and 22b, respectively, in FIG. 7 ) of 500 mm or more. The upper limits of dimensions 21a and 21b are not particularly limited, but can be, for example, 1,800 mm. Furthermore, the upper limits of dimensions 22a and 22b are not particularly limited, but can be, for example, 1,300 mm.

[0298] The present invention can use such a large mask 21. By using the large mask 21 in combination with the reduction projection optical system 31, it is possible to increase the energy density of the laser beam irradiated onto the substrate.

[0299] [Separable Unit] As shown in Fig. 8, the processing apparatus 100 according to the present invention preferably includes a first unit 100A including a first optical function unit (including a laser light source 11 and a shaping optical system 12) 10, and a second unit 100B detachable from the first unit 100A, the second unit 100B including a second optical function unit 20 and a substrate stage 40. In Fig. 8, the second unit 100B further includes an optional third optical function unit 30. In Fig. 8, the first unit 100A and the second unit 100B are coupled via a detachable mechanism 100C.

[0300] When the processing apparatus 100 is introduced into a factory, the first unit 100A and the second unit 100B can be separated and transported. That is, the processing apparatus 100 can be easily transported in separate units. Furthermore, by using the processing apparatus 100, installation costs can be reduced.

[0301] [Vertical Mask Changer] The processing apparatus according to the present invention may further include a vertical mask changer configured to change a plurality of masks.

[0302] A processing apparatus further equipped with such a vertical mask changer can easily form a variety of patterns.

[0303] FIG. 9 shows a schematic diagram of an example of mask exchange using an example of a vertical mask changer.

[0304] This example shows the installation and replacement of a mask 21 to be placed in a mask holder 25, which is schematically shown in Fig. 9A. This example also uses a mask stocker 26 as a part of a vertical mask changer. The mask stocker 26 is configured to store a plurality of masks.

[0305] 9B, the mask 21 is removed from the mask stocker 26 using the mask clamp 27. There are no particular limitations on the manner in which the mask 21 is held (clamped) by the mask clamp 27. The mask stocker 26 and the mask clamp 27 constitute a vertical mask changer 28 configured to exchange a plurality of masks 21.

[0306] As shown in Fig. 9(C), the mask 21 is placed in the mask holder 25 while remaining in the vertical orientation. After placement, the mask clamp 27 is released from its grip (unclamped) as shown in Fig. 9(D).

[0307] When replacing the mask 21, the mask 21 placed on the mask holder 25 is gripped by the mask clamp 27 as shown in Fig. 9(E), and then the mask 21 is detached from the mask holder 25 as shown in Fig. 9(F). The detached mask 21 is stored in the mask stocker 26 as shown in Fig. 9(G). Next, the next mask 21 to be used is removed from the mask stocker 26 in the same manner as shown in Fig. 9(B), and the mask 21 is placed on the mask holder 25 in the procedure described above. This makes it possible to replace multiple masks 21 while maintaining their vertical arrangement.

[0308] By replacing the mask 21 while maintaining the vertical position in this manner, it is possible to prevent foreign matter such as dust from accumulating on the effective area of ​​the mask 21 and to prevent the mask 21 from bending during replacement.

[0309] The processing apparatus 100 may also include a mask cabinet 29 shown in Fig. 10. The mask cabinet 29 is configured to store and transport a plurality of mask stockers 26. For example, the mask cabinet 29 includes an opening 29A, and is configured so that the mask stocker 26 storing the target mask 21 can be moved to the position of the opening 29A while the masks 21 are maintained in a vertical position within the mask cabinet 29.

[0310] [Reduction Projection Optical System] It is preferable to use a reduction projection optical system 31 equipped with a projection lens having an effective diameter of 150 mm or less (for example, diameter 31a in FIG. 11). In the present invention, the effective diameter of the lens refers to the inner diameter of the objective lens.

[0311] Projection lenses with an effective diameter of 150 mm or less have the advantages of easy thermal management and little distortion. They are also inexpensive. The processing method of the present invention is capable of precisely processing unevenness that is almost uniform across the processing area of ​​a substrate, even when using a projection lens with an effective diameter of 150 mm or less.

[0312] [Modes of Fine Asperities] According to the present invention, various modes of fine asperities can be formed.

[0313] For example, as shown in FIG. 12, as the fine irregularities (concave portions 200 and protruding portions 300), irregularities including a plurality of trenches 200 can be formed.

[0314] In this case, the multiple trenches 200 can also be formed so that the distance 202 between the bottoms of adjacent trenches 200 is 110% or more of the average width 201b of the bottoms, for example, 110% or more and 200% or less.

[0315] Furthermore, as the multiple trenches 200, multiple trenches can be formed in which the depth 203 is 20 μm or less, for example, 10 μm or more and 20 μm or less, and the ratio of the depth 203 to the average width 201 of the bottom in the cross section is 1.0 or more, for example, 1.0 or more and 4.0 or less.

[0316] Furthermore, as the multiple trenches 200, multiple trenches 200 can be formed in which the average width 201b of the bottom in the cross section of the trench 200 is 70% or more, for example, 70% or more and 100% or less, of the width 201t of the opening on the surface of the substrate 80 (80B), i.e., cylindrical trenches 200.

[0317] Furthermore, as the plurality of trenches 200, a plurality of trenches can be formed in which the width 201t of the opening in the surface of the substrate 80 (80B) is 20 μm or less, for example, 2 μm or more and 20 μm or less.

[0318] Furthermore, a plurality of trenches having a high aspect ratio, in which the ratio of the depth 203 to the average width 201b of the bottom in the cross section is 1.1 or more, further 1.5 or more, further 2.4 or more, or even 3.4 or more, can be formed as the plurality of trenches 200. The upper limit of the ratio is not particularly limited, but can be, for example, 4.0.

[0319] Furthermore, as shown in FIG. 13, the minute irregularities (the recesses 200 and 400 and the protrusions 300) can also be formed to further include a plurality of through holes 400.

[0320] In this case, as shown in FIG. 13, a part of a plurality of trenches 200 can be formed between adjacent through holes 400 among the plurality of through holes 400.

[0321] Also, a portion of the plurality of trenches 200 may be formed at 40% or more, for example, 40% to 50% of the width 400A between adjacent through holes 400. The proportion of 40% or more mentioned here is (the sum of widths 201x, 201y, and 201z) / width 400A in FIG.

[0322] As described above, according to the present invention, it is possible to form fine irregularities in various modes. However, the modes of irregularities that can be formed by the present invention are not limited to those shown in the drawings.

[0323] In Figures 12 and 13, the uneven pattern is represented as a two-dimensional pattern extending in one direction perpendicular to the thickness direction of the substrate, but it may also be a three-dimensional pattern extending in two directions perpendicular to the thickness direction of the substrate.

[0324] Furthermore, the form of the unevenness that can be formed in the present invention is not limited to that shown in the drawings.

[0325] The present invention is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention.

Claims

1. A processing apparatus for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, A first optical function unit comprising a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, A second optical function unit comprising a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, A substrate stage for holding the aforementioned substrate, Includes, The mask includes a mask irradiation area to which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a part of the effective area of ​​the mask. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam that has passed through the mask, The substrate irradiation area is smaller than the workpiece area of ​​the substrate. During the processing operation on the substrate, the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the workpiece area of ​​the substrate. A processing apparatus having dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction of the mask.

2. A processing apparatus for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, A first optical function unit comprising a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, A second optical function unit comprising a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, A substrate stage for holding the aforementioned substrate, Includes, The mask includes a mask irradiation area to which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a part of the effective area of ​​the mask. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam that has passed through the mask, The substrate irradiation area is smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are configured to maintain a relative corresponding positional relationship by operating synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated. During the processing operation on the substrate, the laser beam irradiation position is fixed, and the mask and the substrate stage are operated in synchronously to sweep the mask and the substrate stage, thereby performing surface roughening of the workpiece area on the substrate. A processing apparatus having dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction of the mask.

3. The mask and the substrate stage are configured to maintain a relative corresponding positional relationship by operating synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated. The processing apparatus according to claim 1, wherein, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronous motion to sweep and irradiate the mask and the substrate stage while superimposing a portion of the irradiation area of ​​the substrate, thereby performing surface unevenness processing on the workpiece area of ​​the substrate.

4. The processing apparatus according to any one of claims 1 to 3, further comprising a mask stage for holding the mask and sweeping the mask.

5. The processing apparatus according to any one of claims 1 to 3, wherein the second optical function unit further shapes the irradiation shape of the laser beam that has passed through the first optical function unit by passing it through the mask.

6. The processing apparatus according to any one of claims 1 to 3, wherein, in the sweep irradiation in at least one direction, the mask and the substrate stage are swept without stopping while the laser beam is pulsed onto the mask and the substrate stage.

7. The processing apparatus according to any one of claims 1 to 3, further comprising a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

8. A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, As the mask, one is used in which the vertical and horizontal dimensions perpendicular to the thickness direction are 700 mm or more. The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. A processing method for performing surface roughening of the workpiece area of ​​the substrate by sweeping and irradiating the mask and the substrate stage while overlapping a portion of the substrate irradiation area during the processing operation on the substrate.

9. A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. During the processing operation on the substrate, the surface irregularities of the workpiece area of ​​the substrate are processed while overlapping a portion of the substrate irradiation area. A processing method using a mask in which the dimensions in the vertical and horizontal directions perpendicular to the thickness direction are 700 mm or more.

10. A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, As the mask, one is used in which the vertical and horizontal dimensions perpendicular to the thickness direction are 700 mm or more. The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. A processing method for performing surface roughening of the workpiece area of ​​the substrate by operating the mask and the substrate stage in synchronous motion while fixing the irradiation position of the laser beam during the processing operation on the substrate, thereby sweeping and irradiating the mask and the substrate stage.

11. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. The processing method according to claim 10, wherein, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronous motion to sweep and irradiate the mask and the substrate stage while superimposing a portion of the irradiation area of ​​the substrate, thereby processing the surface irregularities of the area to be processed on the substrate.

12. The processing method according to any one of claims 8, 10, and 11, further comprising a mask stage that holds the mask and sweeps the mask.

13. The processing method according to any one of claims 8, 10, and 11, wherein the processing apparatus further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

14. The processing method according to any one of claims 8, 10, and 11, wherein, in the sweep irradiation in at least one direction, the mask and the substrate stage are swept without stopping while the laser beam is pulsed onto the mask and the substrate stage.

15. The processing method according to any one of claims 8, 10, and 11, wherein the sweep irradiation is repeated multiple times for each area of ​​the substrate to be processed.

16. A method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, As the mask, one is used in which the vertical and horizontal dimensions perpendicular to the thickness direction are 700 mm or more. The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. A method for manufacturing a substrate, wherein, during the processing operation on the substrate, the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface roughening of the processing area of ​​the substrate.

17. A method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. During the processing operation on the substrate, the surface irregularities of the workpiece area of ​​the substrate are processed while overlapping a portion of the substrate irradiation area. A method for manufacturing a substrate, using a mask having dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.

18. A method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, As the mask, one is used in which the vertical and horizontal dimensions perpendicular to the thickness direction are 700 mm or more. The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. A method for manufacturing a substrate, in which, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronous motion to sweep and irradiate the mask and the substrate stage, thereby performing surface roughening of the workpiece area of ​​the substrate.

19. The method for manufacturing a substrate according to any one of claims 16 to 18, wherein the substrate is a substrate for semiconductor packaging.