Semiconductor device and vehicle

Abstract

This semiconductor device comprises a first lead that has a base part, a semiconductor element that is mounted on one side of the base part in the thickness direction and that has a first electrode, a second lead that is disposed so as to be separated from the base part in a first direction orthogonal to the thickness direction, a first electroconductive member that is joined to the first electrode and the second lead so as establish electrical continuity therebetween, and a sealing resin, wherein: the first electroconductive member includes a first part which is joined to the first electrode with a first joining layer having conductivity therebetween; the first part has a first surface facing the one side in the thickness direction and a second surface facing the other side in the thickness direction; and the first part is formed with a plurality of first recesses recessed from the first surface and a plurality of second recesses recessed from the second surface.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes multiple leads, a semiconductor element, multiple conductive members, and a sealing resin. The multiple conductive members include a metal clip and a wire. The metal clip is bonded to an electrode formed on the upper surface of the semiconductor element and to a lead. The wire is bonded to an electrode formed on the upper surface of the semiconductor element and to another lead. The sealing resin covers the semiconductor element and the multiple conductive members. The metal clip is conductively bonded to the electrode on the semiconductor element via a bonding layer. In such a semiconductor device, each part thermally expands and contracts due to heat generated by the semiconductor element. The linear expansion coefficient of the sealing resin is greater than that of the metal clip and the semiconductor element. Due to this difference in linear expansion coefficient, relatively large stress may act near the periphery of the semiconductor element due to thermal contraction of the sealing resin. In this case, there is a concern that problems such as peeling of the sealing resin in contact with the metal clip or poor bonding between the metal clip and the bonding layer on the semiconductor element may occur.

[0003] International Publication No. 2022 / 014387

[0004] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device suitable for improving the adhesion of a conductive member bonded to a semiconductor element with a sealing resin and the bondability of a conductive member bonded to a bonding layer on the semiconductor element side.

[0005] A semiconductor device provided by a first aspect of the present disclosure includes a first conductive support member having a base, a semiconductor element mounted on one side of the base in a thickness direction and having a first electrode disposed on one side of the thickness direction, a second conductive support member disposed spaced apart from the base in a first direction perpendicular to the thickness direction, a first conductive member conductively joined to the first electrode and the second conductive support member, and a sealing resin covering the semiconductor element, the first conductive member, and at least a portion of each of the first conductive support member and the second conductive support member. The first conductive member includes a first portion joined to the first electrode via a conductive first bonding layer. The first portion has a first surface facing one side in the thickness direction and a second surface facing the other side in the thickness direction. The first portion has a plurality of first recesses recessed from the first surface and a plurality of second recesses recessed from the second surface.

[0006] A vehicle provided by a second aspect of the present disclosure includes a power conversion device configured to include the semiconductor device according to the first aspect of the present disclosure.

[0007] According to the above configuration, in the conductive member bonded to the semiconductor element, it is possible to improve the adhesion to the sealing resin and the bondability to the bonding layer on the semiconductor element side.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a partial enlarged view of a portion of FIG. 8. FIG. 12 is a partial enlarged view of a portion of FIG. 9. FIG. 13 is a partial enlarged view of a portion of FIG. 10. FIG. 14 is a schematic diagram of a vehicle including a semiconductor device according to a first embodiment of the present disclosure. FIG. 15 is a partial plan view showing a semiconductor device according to a first modification of the first embodiment. FIG. 16 is a partially enlarged cross-sectional view showing a semiconductor device according to a first modified example of the first embodiment, representing a cross section similar to that of FIG. 11 . FIG. 17 is a partially enlarged cross-sectional view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 18 is a partially enlarged cross-sectional view showing a semiconductor device according to a second modified example of the first embodiment, representing a cross section similar to that of FIG. 11 . FIG. 19 is a partially enlarged cross-sectional view showing a semiconductor device according to a third modified example of the first embodiment. FIG. 20 is a partially enlarged cross-sectional view showing a semiconductor device according to a fourth modified example of the first embodiment, representing a cross section similar to that of FIG. 11 . FIG. 21 is a partially enlarged cross-sectional view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 22 is a partially enlarged cross-sectional view showing a semiconductor device according to the second embodiment of the present disclosure, representing a cross section similar to that of FIG. 11 . FIG. 23 is a partially enlarged cross-sectional view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 23 . FIG. 25 is a partially enlarged cross-sectional view taken along line XXV-XXV in FIG. 23 .

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 13 show a semiconductor device according to a first embodiment of the present disclosure. The application of the semiconductor device A10 according to this embodiment is not limited in any way, and it may be used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter. The semiconductor device A10 includes a first lead 11, a second lead 12, a third lead 13, a fourth lead 14, a semiconductor element 20, a first conductive member 30, a second conductive member 40, a third conductive member 50, and a sealing resin 60.

[0014] FIG. 1 is a perspective view showing the semiconductor device A10. FIG. 2 is a plan view showing the semiconductor device A10. FIG. 3 is a partial plan view showing the semiconductor device A10. In FIG. 3, the outline of the sealing resin 60 is indicated by an imaginary line (two-dot chain line). FIG. 4 is a bottom view showing the semiconductor device A10. FIG. 5 is a side view showing the semiconductor device A10. FIG. 6 is a front view showing the semiconductor device A10. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a partial enlarged view of a portion of FIG. 8. FIG. 12 is a partial enlarged view of a portion of FIG. 9. FIG. 13 is a partial enlarged view of a portion of FIG. 10.

[0015] In these figures, for example, an example of the thickness direction in the present disclosure is referred to as the "thickness direction z." An example of a direction perpendicular to the thickness direction z is referred to as the "first direction x." A direction perpendicular to the thickness direction z and the first direction x is referred to as the "second direction y." Furthermore, one side of the thickness direction z is an example of the "one side of the thickness direction" in the present disclosure and is referred to as the "z1 side of the thickness direction z," and the other side of the thickness direction z is an example of the "other side of the thickness direction" in the present disclosure and is referred to as the "z2 side of the thickness direction z." An example of one side of the first direction x is the "x1 side of the first direction x," and an example of the other side of the first direction x is the "x2 side of the first direction x." An example of one side of the second direction y is the "y1 side of the second direction y," and an example of the other side of the second direction y is the "y2 side of the second direction y."

[0016] 1 to 4 and 6 to 10, the first lead 11 has a base portion 111 and a terminal portion 112. The first lead 11 is a conductive member on which the semiconductor element 20 is mounted and which forms part of a conductive path between the semiconductor element 20 and a wiring board (not shown) on which the semiconductor device A10 is mounted, etc. The first lead 11 is an example of a "first conductive support member" of the present disclosure.

[0017] The first lead 11 includes, for example, copper (Cu) or a copper alloy. The first lead 11 may also have a surface metal layer (not shown). The surface metal layer includes, for example, Ag (silver), Ni (nickel), or the like.

[0018] The base 111 has a first main surface 111A, a first back surface 111B, and a through hole 111C. The first main surface 111A faces the z1 side in the thickness direction z. The first back surface 111B faces the z2 side in the z direction. The through hole 111C penetrates the base 111 in the thickness direction z. The shape of the through hole 111C is not limited in any way, and in the illustrated example, it is circular when viewed in the thickness direction z.

[0019] The terminal portion 112 is connected to the base portion 111 and includes a portion extending toward the x1 side in the first direction x. The base portion 111 and the terminal portion 112 are electrically connected to each other. A portion of the terminal portion 112 is covered with the sealing resin 60. The portion of the terminal portion 112 covered with the sealing resin 60 is bent when viewed in the second direction y. The surface of the portion of the terminal portion 112 exposed from the sealing resin 60 may be plated with, for example, tin (Sn).

[0020] As shown in FIGS. 1 to 4 , 6 , and 8 , the second lead 12 is spaced apart from the first lead 11 and is disposed on the y2 side in the second direction y relative to the terminal portion 112 of the first lead 11. The second lead 12 is also disposed on the x1 side in the first direction x relative to the base portion 111 of the first lead 11. The second lead 12 is electrically connected to the semiconductor element 20 via the first conductive member 30. The second lead 12 is an example of a “second conductive support member” of the present disclosure. The second lead 12 has a pad portion 121 and a terminal portion 122. The pad portion 121 is covered with a sealing resin 60. The pad portion 121 may be plated with, for example, silver (Ag) or tin (Sn). The terminal portion 122 is connected to the pad portion 121. A portion of the terminal portion 122 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60. The terminal portion 122 extends in the first direction x, for example, parallel to the terminal portion 112. The surface of the terminal portion 122 may be plated with, for example, tin (Sn).

[0021] As shown in FIGS. 1 to 4 , 6 , and 9 , the third lead 13 is spaced apart from the first lead 11 and the second lead 12 and is disposed on the y2 side in the second direction y relative to the second lead 12. The third lead 13 is adjacent to the second lead 12 in the second direction y. The third lead 13 is also disposed on the x1 side in the first direction x relative to the base 111. The third lead 13 is electrically connected to the semiconductor element 20 via the second conductive member 40. The third lead 13 is an example of a “third conductive support member” of the present disclosure. The third lead 13 has a pad portion 131 and a terminal portion 132. The pad portion 131 is covered with a sealing resin 60. The pad portion 131 may be plated with, for example, silver (Ag) or tin (Sn). The terminal portion 132 is connected to the pad portion 131. The terminal portion 132 is partially covered with the sealing resin 60, and the other portion is exposed from the sealing resin 60. The terminal portion 132 extends in the first direction x, for example, parallel to the terminal portion 112 and the terminal portion 122. The surface of the terminal portion 132 may be plated with, for example, tin (Sn).

[0022] As shown in FIGS. 1 to 4 , 6 , and 10 , the fourth lead 14 is spaced apart from the first lead 11, the second lead 12, and the third lead 13 and is disposed on the y2 side of the third lead 13 in the second direction y. The fourth lead 14 is located on the opposite side of the second lead 12 from the third lead 13 in the second direction y. The fourth lead 14 is also disposed on the x1 side of the base 111 in the first direction x. The fourth lead 14 is electrically connected to the semiconductor element 20 via the third conductive member 50. The fourth lead 14 is an example of a “fourth conductive support member” of the present disclosure. The fourth lead 14 has a pad portion 141 and a terminal portion 142. The pad portion 141 is covered with a sealing resin 60. The pad portion 141 may be plated with, for example, silver (Ag) or tin (Sn). The terminal portion 142 is connected to the pad portion 141. Terminal portion 142 is partially covered with sealing resin 60, and the other portion is exposed from sealing resin 60. Terminal portion 142 extends in the first direction x, for example, parallel to terminal portion 112, terminal portion 122, and terminal portion 132. The surface of terminal portion 142 may be plated with, for example, tin (Sn).

[0023] As shown in FIGS. 3 and 8 to 13 , the semiconductor element 20 is mounted on the first main surface 111A of the base 111. In the semiconductor device A10, the specific configuration of the semiconductor element 20 is not limited in any way. In this embodiment, the semiconductor element 20 is a switching element, such as an n-channel, vertical-structure metal-oxide-semiconductor field-effect transistor (MOSFET). The semiconductor element 20 is not limited to a MOSFET. The semiconductor element 20 may be another transistor, such as an insulated gate bipolar transistor (IGBT). Furthermore, the semiconductor element 20 may be a large-scale integrated circuit (LSI) or a diode. The semiconductor element 20 is rectangular when viewed in the thickness direction z. The semiconductor element 20 is disposed at the center of the base 111 in the second direction y.

[0024] The semiconductor element 20 has a semiconductor layer 25, a first electrode 21, a second electrode 22, and a third electrode 23. The thickness (dimension in the thickness direction z) of the semiconductor element 20 is not particularly limited and is, for example, about 100 μm or more and 1000 μm or less.

[0025] The semiconductor layer 25 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0026] The first electrode 21 is disposed on a portion of the semiconductor layer 25 on the z1 side in the thickness direction z. A current corresponding to the power converted by the semiconductor element 20 flows through the first electrode 21. In this embodiment, the first electrode 21 is a source electrode.

[0027] The second electrode 22 is disposed on a portion of the semiconductor layer 25 on the z1 side in the thickness direction z. The second electrode 22 is located away from the first electrode 21. A voltage for driving the semiconductor element 20 is applied to the second electrode 22. In this embodiment, the second electrode 22 is a gate electrode. As viewed in the thickness direction z, the area of ​​the second electrode 22 is smaller than the area of ​​the first electrode 21. In the illustrated example, as viewed in the thickness direction z, the second electrode 22 is disposed on the y2 side of the semiconductor element 20 in the second direction y, in the center in the first direction x. The first electrode 21 is provided in most of the portion of the semiconductor layer 25 on the z1 side in the thickness direction z, excluding the portion where the second electrode 22 is disposed.

[0028] The third electrode 23 is disposed on a portion of the semiconductor layer 25 on the z2 side in the thickness direction z. The third electrode 23 faces the first main surface 111A of the base 111 of the first lead 11. A current corresponding to the power before being converted by the semiconductor element 20 flows through the third electrode 23. In this embodiment, the third electrode 23 is a drain electrode. The third electrode 23 is conductively joined to the first main surface 111A via a bonding layer 29. The bonding layer 29 is made of a conductive material, such as solder or Ag (silver) paste.

[0029] The first lead 11 is electrically connected to the third electrode 23 of the semiconductor element 20. The terminal portion 112 is the drain terminal of the semiconductor device A10. The second lead 12 is electrically connected to the first electrode 21 of the semiconductor element 20. The terminal portion 122 is the source terminal of the semiconductor device A10. The third lead 13 is electrically connected to the first electrode 21 of the semiconductor element 20. The terminal portion 132 is the source sense terminal of the semiconductor device A10. The fourth lead 14 is electrically connected to the second electrode 22 of the semiconductor element 20. The terminal portion 142 is the gate terminal of the semiconductor device A10.

[0030] As shown in FIGS. 3 , 8 , and 11 , the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12. The first conductive member 30 is formed, for example, of a metal plate. The constituent material of the first conductive member 30 includes, for example, Cu (copper). The first conductive member 30 is an appropriately bent metal plate. In the illustrated example, the first conductive member 30 is a fixed-length Cu clip (metal clip). The first conductive member 30 extends with the first direction x as its longitudinal direction. The first conductive member 30 has a pair of side surfaces 30A and 30B. The side surfaces 30A and 30B face in a direction perpendicular to the thickness direction z and, in this embodiment, face in the second direction y. The side surface 30A faces the y2 side of the second direction y, and the side surface 30B faces the y1 side of the second direction y. The thickness (dimension in thickness direction z) of first conductive member 30 is not particularly limited, and is, for example, approximately not less than 150 μm and not more than 250 μm.

[0031] The first conductive member 30 has a first portion 31 , a second portion 32 and a first intermediate portion 33 .

[0032] The first portion 31 is joined to the first electrode 21 via a first bonding layer 38, and is a portion that conductively bonds the first conductive member 30 to the first electrode 21. The first bonding layer 38 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the first portion 31 is located at the end of the first conductive member 30 on the x2 side in the first direction x. The first portion 31 has a rectangular shape when viewed in the thickness direction z.

[0033] The first portion 31 has a first surface 311 and a second surface 312. The first surface 311 faces the z1 side in the thickness direction z. The second surface 312 faces the z2 side in the thickness direction z. The first portion 31 is also formed with a plurality of first recesses 311 a and a plurality of second recesses 312 a.

[0034] The multiple first recesses 311a are recessed from the first surface 311 toward the z2 side in the thickness direction z. In this embodiment, the multiple first recesses 311a are configured as multiple grooves arranged along a direction perpendicular to the thickness direction z, and each of the multiple grooves extends linearly. In the illustrated example, the multiple first recesses 311a are arranged along the first direction x, and each first recess 311a extends linearly in the second direction y. The multiple first recesses 311a are continuously arranged in the first direction x without any gaps between them as viewed in the second direction y. The multiple first recesses 311a are formed, for example, by press working. Note that the arrangement direction of the multiple first recesses 311a is not limited to the illustrated example. For example, the multiple first recesses 311a may be arranged along the second direction y, and each first recess 311a may extend in the first direction x. The method for forming the multiple first recesses 311a is not limited to the above-described press processing, and may be, for example, laser processing or chemical processing (e.g., etching). The depth (dimension in the thickness direction z) of the first recesses 311a can be set as appropriate, and the method for forming the first recesses 311a can be appropriately selected depending on the depth of the first recesses 311a. In the illustrated example, the multiple first recesses 311a are formed over almost the entire first surface 311, but the multiple first recesses 311a may be formed over only a portion of the first surface 311. In this embodiment, each first recess 311a has a triangular cross-sectional shape, and the first surface 311 has a sawtooth shape, but the cross-sectional shape of the first recesses 311a is not limited to this. The multiple first recesses 311a are not limited to a configuration consisting of multiple grooves, and may be, for example, a configuration in which the multiple first recesses 311a are scattered and separated from each other when viewed in the thickness direction z.

[0035] The second recesses 312a are recessed from the second surface 312 toward the z1 side in the thickness direction z. In this embodiment, the second recesses 312a are formed by grooves arranged in a direction perpendicular to the thickness direction z, and each of the grooves extends linearly. In the illustrated example, the second recesses 312a are arranged in the first direction x, and each second recess 312a extends linearly in the second direction y. The second recesses 312a are arranged continuously in the first direction x without any gaps between them as viewed in the second direction y. In the illustrated example, the shape and size of the second recesses 312a are similar to those of the first recesses 311a described above. The second recesses 312a are formed, for example, by press working. The arrangement direction of the multiple second recesses 312a is not limited to the illustrated example. For example, the multiple second recesses 312a may be arranged along the second direction y and extend in the first direction x. The method for forming the multiple second recesses 312a is not limited to the press processing described above. For example, laser processing, chemical processing (e.g., etching), etc. may be used. The depth of the second recesses 312a (the dimension in the thickness direction z) can be set as appropriate, and the method for forming the second recesses 312a can be selected as appropriate depending on the depth of the second recesses 312a. In this embodiment, the multiple second recesses 312a are formed over almost the entire second surface 312, but the multiple second recesses 312a may also be formed over only a portion of the second surface 312. In this embodiment, the cross-sectional shape of each second recess 312a is triangular, and the second surface 312 is saw-tooth shaped. However, the cross-sectional shape of the second recesses 312a is not limited to this. The plurality of second recesses 312a is not limited to a configuration of a plurality of grooves, and may be configured, for example, such that the plurality of second recesses 312a are separated from one another and scattered when viewed in the thickness direction z.

[0036] The second portion 32 is joined to the pad portion 121 of the second lead 12 via a second bonding layer 39, and is a portion that conductively bonds the first conductive member 30 to the second lead 12. The second bonding layer 39 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the second portion 32 is located at the end of the first conductive member 30 on the x1 side in the first direction x. The second portion 32 is rectangular when viewed in the thickness direction z.

[0037] The second portion 32 has a third surface 321 and a fourth surface 322. The third surface 321 faces the z1 side in the thickness direction z. The fourth surface 322 faces the z2 side in the thickness direction z.

[0038] The first intermediate portion 33 is located between the first portion 31 and the second portion 32 when viewed in the thickness direction z. The first intermediate portion 33 is connected to the first portion 31 and the second portion 32. The first intermediate portion 33 is rectangular when viewed in the thickness direction z. The portions of the first intermediate portion 33 that connect the first portion 31 and the second portion 32 are bent when viewed in the second direction y. The portions of the first intermediate portion 33 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z of the first portion 31 and the second portion 32.

[0039] The first intermediate portion 33 has a fifth surface 331 and a sixth surface 332. The fifth surface 331 is located on the z1 side in the thickness direction z. The sixth surface 332 is located on the z2 side in the thickness direction z.

[0040] As shown in FIGS. 3 , 9 , and 12 , the second conductive member 40 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 131 of the third lead 13. In this embodiment, the second conductive member 40 is a bonding wire. The specific configuration of the second conductive member 40 is not limited in any way, and includes configurations in which the cross-sectional shape is circular, elliptical, flattened rectangular, etc. In the illustrated example, the second conductive member 40 has a circular cross-sectional shape. The second conductive member 40 is joined by, for example, wedge bonding. The material of the second conductive member 40 is not limited in any way, and includes, for example, Cu (copper), Al (aluminum), etc.

[0041] As shown in FIGS. 3 , 10 , and 13 , the third conductive member 50 is conductively joined to the second electrode 22 of the semiconductor element 20 and the pad portion 141 of the fourth lead 14. In this embodiment, the third conductive member 50 is a bonding wire. The specific configuration of the third conductive member 50 is not limited in any way, and includes configurations in which the cross-sectional shape is circular, elliptical, flattened rectangular, etc. In the illustrated example, the third conductive member 50 has a circular cross-sectional shape. The third conductive member 50 is joined by, for example, wedge bonding. The material of the third conductive member 50 is not limited in any way, and includes, for example, Cu (copper), Al (aluminum), etc.

[0042] The bonding of the semiconductor element 20 to the base 111 via the bonding layer 29 and the bonding of the first conductive member 30 to the first electrode 21 and the second lead 12 (pad portion 121) via the first bonding layer 38 and the second bonding layer 39 are performed simultaneously by, for example, a solder reflow process. After the first conductive member 30 is bonded, the second conductive member 40 and the third conductive member 50 are bonded.

[0043] As shown in FIGS. 1 to 10 , the sealing resin 60 covers the semiconductor element 20, the first conductive member 30, the second conductive member 40, the third conductive member 50, and portions of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14. The sealing resin 60 has electrical insulation properties. The sealing resin 60 is made of a material containing, for example, black epoxy resin. The sealing resin 60 has a resin main surface 61, a resin back surface 62, a pair of first resin side surfaces 63, a pair of second resin side surfaces 64, a pair of openings 65, a mounting hole 66, and a recess 67.

[0044] The resin main surface 61 faces the z1 side in the thickness direction z. The resin back surface 62 faces the z2 side in the thickness direction z. A first back surface 111B of the base 111 is exposed from the resin back surface 62. The first back surface 111B and the resin back surface 62 are flush with each other.

[0045] The pair of first resin side surfaces 63 are spaced apart from each other in the first direction x. The pair of first resin side surfaces 63 are connected to the resin main surface 61 and the resin back surface 62. The terminal portion 112 of the first lead 11, the terminal portion 122 of the second lead 12, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from the first resin side surface 63 facing the x1 side in the first direction x.

[0046] The pair of second resin side surfaces 64 are spaced apart from each other in the second direction y. The pair of second resin side surfaces 64 are connected to the resin main surface 61 and the resin back surface 62.

[0047] The pair of openings 65 are positioned apart from each other in the second direction y. Each of the pair of openings 65 is recessed inward into the sealing resin 60 from the resin main surface 61 and one of the pair of second resin side surfaces 64. A portion of the first main surface 111A of the base 111 of the first lead 11 is exposed from the pair of openings 65.

[0048] The mounting hole 66 penetrates the sealing resin 60 from the resin main surface 61 to the resin back surface 62 in the thickness direction z. When viewed in the thickness direction z, the mounting hole 66 is contained within the through hole 111C of the base 111 of the first lead 11. The inner circumferential surface of the base 111 that defines the through hole 111C is covered with the sealing resin 60. As a result, when viewed in the thickness direction z, the maximum dimension of the mounting hole 66 is smaller than the dimension of the through hole 111C.

[0049] The recess 67 is located between the terminal portion 112 and the terminal portion 122 in the second direction y. The recess 67 is recessed from the first resin side surface 63 located on the x1 side in the first direction x to the x2 side in the first direction x.

[0050] Next, an example of use of the semiconductor device A10 will be described with reference to Fig. 14. Fig. 14 is a schematic diagram of a vehicle B1 equipped with the semiconductor device A10. The vehicle B1 is, for example, an electric vehicle (EV).

[0051] As shown in FIG. 14 , vehicle B1 includes a drive system 84 including an AC-DC converter 81, a power receiving device 82, and a storage battery 83. The semiconductor device A10 constitutes part of the AC-DC converter 81. When vehicle B1 receives AC power from a charging facility 80, which is an AC power source installed outdoors or elsewhere, the AC-DC converter 81 converts the AC power into high-voltage DC power. The AC-DC converter 81 supplies the high-voltage DC power to a storage battery 83. The power receiving device 82 supplies power to the storage battery 83 via a contactless charging system, and power is supplied by electromagnetic induction from a contactless charger (not shown) installed in a parking lot or elsewhere. The power stored in the storage battery 83 is supplied to a drive system 84 including an inverter, an AC motor, and a transmission. The drive system 84 drives vehicle B1. The AC-DC converter 81 is an example of a "power conversion device" of the present disclosure.

[0052] Next, the operation of the semiconductor device A10 will be described.

[0053] In the semiconductor device A10, the first conductive member 30 is conductively bonded to the first electrode 21 of the semiconductor element 20 and the second lead 12. The first conductive member 30 includes a first portion 31, which is bonded to the first electrode 21 via a conductive first bonding layer 38. The first portion 31 has a first surface 311 facing the z1 side in the thickness direction z and a second surface 312 facing the z2 side in the thickness direction z. The first portion 31 is formed with a plurality of first recesses 311a recessed from the first surface 311 and a plurality of second recesses 312a recessed from the second surface 312. According to the above configuration, the first surface 311 has an uneven shape due to the plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to the multiple second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A10.

[0054] The first recesses 311a are formed by grooves arranged in a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. The second recesses 312a are formed by grooves arranged in a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration further enhances the anchoring effect provided by the uneven shape of the first surface 311 and the uneven shape of the second surface 312. This is therefore preferable in terms of improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38.

[0055] Furthermore, the first recesses 311a formed on the first surface 311 are configured by grooves arranged along the first direction x, which efficiently increases the surface area of ​​the first surface 311. This makes it possible to improve heat dissipation from the surface of the first conductive member 30.

[0056] 15 to 25 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals as in the above-described embodiment, and redundant explanations will be omitted. Furthermore, the configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0057] First Modification of First Embodiment: Figures 15 and 16 show a first modification of the semiconductor device A10. Figure 15 is a partial plan view showing a semiconductor device A11 according to the first modification. Figure 16 is a partially enlarged cross-sectional view showing the semiconductor device A11, showing the same cross-section as Figure 11. In Figure 15, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). In the semiconductor device A11 of this modification, the configuration of the first conductive member 30 is different from that of the first conductive member 30 of the semiconductor device A10.

[0058] In this modified example, a plurality of third recesses 321a and a plurality of fourth recesses 322a are formed in the second portion 32 of the first conductive member 30. The plurality of third recesses 321a are recessed from the third surface 321 toward the z2 side in the thickness direction z. The plurality of third recesses 321a are arranged along the first direction x, and each of the third recesses 321a extends linearly in the second direction y. The plurality of fourth surfaces 322 are recessed from the fourth surface 322 toward the z1 side in the thickness direction z. The plurality of fourth recesses 322a are arranged along the first direction x, and each of the fourth recesses 322a extends linearly in the second direction y. The plurality of third recesses 321a have the same configuration as the plurality of first recesses 311a, and the plurality of fourth recesses 322a have the same configuration as the plurality of second recesses 312a.

[0059] In the semiconductor device A11, the first surface 311 has an uneven shape due to a plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to a plurality of second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A11.

[0060] The first recesses 311a are formed by grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. The second recesses 312a are formed by grooves arranged along the first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration enhances the anchor effect due to the uneven shape of the first surface 311 and the uneven shape of the second surface 312, and is more preferable for improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38.

[0061] Furthermore, the first recesses 311a formed on the first surface 311 are configured by grooves arranged along the first direction x, which efficiently increases the surface area of ​​the first surface 311. This makes it possible to improve heat dissipation from the surface of the first conductive member 30.

[0062] In this modification, the second portion 32 of the first conductive member 30 further includes a plurality of first recesses 311a recessed from the third surface 321 and a plurality of second recesses 312a recessed from the second surface 312. The plurality of third recesses 321a formed in the second portion 32 provide the third surface 321 with an uneven shape. The third surface 321 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the second portion 32 (first conductive member 30) and the sealing resin 60. Furthermore, the plurality of fourth recesses 322a formed in the second portion 32 provide the fourth surface 322 with an uneven shape. The fourth surface 322 is in contact with the second bonding layer 39. Therefore, the anchor effect can improve adhesion between the second portion 32 (first conductive member 30) and the second bonding layer 39. This further improves the reliability of the semiconductor device A11.

[0063] The third recesses 321a are formed by grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. The fourth recesses 322a are formed by grooves arranged along the first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration further enhances the anchoring effect provided by the uneven shapes of the third surface 321 and the fourth surface 322. This is therefore preferable for improving the adhesion between the second portion 32 (first conductive member 30) and the sealing resin 60 and the bonding between the second portion 32 (first conductive member 30) and the second bonding layer 39.

[0064] Furthermore, the third recesses 321a formed on the third surface 321 are configured by a plurality of grooves arranged along the first direction x, which makes it possible to efficiently increase the surface area of ​​the third surface 321. This makes it possible to further improve heat dissipation from the surface of the first conductive member 30.

[0065] Second Modification of First Embodiment: Figures 17 and 18 show a second modification of the semiconductor device A10. Figure 17 is a partial plan view showing a semiconductor device A12 according to the second modification. Figure 18 is a partially enlarged cross-sectional view showing the semiconductor device A12, showing the same cross-section as Figure 11. In Figure 17, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A12 of this modification differs from the semiconductor devices A10 and A11 in the configuration of the first conductive member 30.

[0066] The semiconductor device A12 differs from the semiconductor device A11 in the configuration of the first intermediate portion 33 of the first conductive member 30. In this modification, a plurality of fifth recesses 331a and a plurality of sixth recesses 332a are formed in the first intermediate portion 33. The plurality of fifth recesses 331a are recessed from the fifth surface 331. The plurality of third recesses 321a are arranged along the first direction x, and each of the third recesses 321a extends linearly in the second direction y. The plurality of fourth surfaces 322 are recessed from the fourth surface 322. The plurality of sixth recesses 332a are arranged along the first direction x, and each of the sixth recesses 332a extends linearly in the second direction y. The plurality of fifth recesses 331a have the same configuration as the plurality of first recesses 311a, and the plurality of sixth recesses 332a have the same configuration as the plurality of second recesses 312a.

[0067] In the semiconductor device A12, the first surface 311 has an uneven shape due to a plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to a plurality of second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A12. In addition, the semiconductor device A12 exhibits the same effects as the semiconductor device A11 described above.

[0068] In this modification, the first intermediate portion 33 of the first conductive member 30 further includes a plurality of fifth recesses 331a recessed from the fifth surface 331 and a plurality of sixth recesses 332a recessed from the sixth surface 332. The fifth and sixth surfaces 331, 332 are formed unevenly by the plurality of fifth recesses 331a and the plurality of sixth recesses 332a formed in the second portion 32. The fifth and sixth surfaces 331, 332 are in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first intermediate portion 33 (first conductive member 30) and the sealing resin 60. This further improves the reliability of the semiconductor device A12.

[0069] The fifth recesses 331a are formed by grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. The sixth recesses 332a are formed by grooves arranged along the first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration further enhances the anchoring effect provided by the uneven shapes of the fifth surface 331 and the sixth surface 332. This is therefore preferable for improving adhesion between the second portion 32 (first conductive member 30) and the sealing resin 60.

[0070] Furthermore, the third recesses 321a formed on the third surface 321 are configured by a plurality of grooves arranged along the first direction x, which makes it possible to efficiently increase the surface area of ​​the third surface 321. This makes it possible to further improve heat dissipation from the surface of the first conductive member 30.

[0071] Third Modification of First Embodiment: Fig. 19 shows a third modification of the semiconductor device A10. Fig. 19 is a partial plan view showing a semiconductor device A13 according to the third modification. In Fig. 19, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A13 of this modification differs from the semiconductor device A12 described above in the configuration of the first conductive member 30.

[0072] In the semiconductor device A13, a plurality of seventh recesses 301 are formed in the first conductive member 30. The plurality of seventh recesses 301 are recessed from the side surfaces 30A and 30B of the first conductive member 30. In the example shown, the first conductive member 30 is formed with a plurality of seventh recesses 301 recessed from the side surface 30A toward the y1 side in the second direction y and a plurality of seventh recesses 301 recessed from the side surface 30B toward the y2 side in the second direction y. In the example shown, the plurality of seventh recesses 301 are formed by a plurality of grooves arranged along the first direction x.

[0073] In the semiconductor device A13, the first surface 311 has an uneven shape due to a plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to a plurality of second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A13. In addition, the semiconductor device A13 has the same effects as the semiconductor device A12 described above.

[0074] In this modification, the first conductive member 30 further has a plurality of seventh recesses 301 recessed from the side surfaces 30A and 30B. The plurality of seventh recesses 301 formed in the first conductive member 30 give the side surfaces 30A and 30B an uneven shape. The side surfaces 30A and 30B are in contact with the sealing resin 60. Therefore, the anchor effect can further improve the adhesion between the first conductive member 30 and the sealing resin 60. This further improves the reliability of the semiconductor device A13.

[0075] Fourth Modification of First Embodiment: Figure 20 shows a fourth modification of the semiconductor device A10. Figure 20 is a partially enlarged cross-sectional view showing a semiconductor device A14 according to the fourth modification, and shows the same cross section as Figure 11. The semiconductor device A14 of this modification differs from the semiconductor device A10 in the configuration of the first conductive member 30.

[0076] In this modification, the configuration of the plurality of second recesses 312a formed in the first portion 31 of the first conductive member 30 differs from that of the semiconductor device A10. The plurality of second recesses 312a each have a trapezoidal cross section and are arranged in the first direction x at intervals as viewed in the second direction y. The second surface 312 is adjacent to the first electrode 21 with a small gap therebetween or abuts against the first electrode 21.

[0077] In the semiconductor device A14, the first surface 311 has an uneven shape due to a plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to a plurality of second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A14. In addition, the semiconductor device A14 exhibits the same effects as the semiconductor device A10 described above.

[0078] Second Embodiment: Figures 21 and 22 show a semiconductor device according to a second embodiment of the present disclosure. Figure 21 is a partial plan view showing a semiconductor device A20 according to this embodiment. Figure 22 is a partially enlarged cross-sectional view showing the semiconductor device A20, representing the same cross-section as Figure 11. In Figure 21, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A20 of this embodiment differs from the semiconductor device A10 described above in the configuration of the first conductive member 30 and the arrangement of the second conductive member 40.

[0079] In this embodiment, the second conductive member 40 is conductively joined to the first portion 31 of the first conductive member 30 and the pad portion 131 of the third lead 13. The second conductive member 40 is conductively joined to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31). The first recess 311a is not formed in the central portion in the first direction x and the second direction y of the first surface 311 of the first portion 31 as viewed in the thickness direction z. The second conductive member 40 is joined to the portion of the first surface 311 where the first recess 311a is not formed (the central portion in the first direction x and the second direction y). The multiple first recesses 311a surround the joint between the first portion 31 and the second conductive member 40 as viewed in the thickness direction z. In this embodiment, the plurality of first recesses 311 a are annular in shape surrounding the joint between the first portion 31 and the second conductive member 40 when viewed in the thickness direction z.

[0080] In this embodiment, the first portion 31 is U-shaped as viewed in the thickness direction z. The first portion 31 is also provided on both sides of the second electrode 22 in the first direction x as viewed in the thickness direction z, and overlaps most of the first electrode 21 as viewed in the thickness direction z. The multiple first recesses 311a are also formed in the first portion 31 on both sides of the second electrode 22 in the first direction x as viewed in the thickness direction z.

[0081] In the semiconductor device A20, the first surface 311 has an uneven shape due to a plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to a plurality of second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A20. In addition, the semiconductor device A20 exhibits the same effects as the semiconductor device A10.

[0082] Furthermore, in the semiconductor device A20, the second conductive member 40 is conductively joined to the first portion 31 (first conductive member 30) and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. In this embodiment, there is no need to provide a space for bonding the second conductive member 40 to the first electrode 21 using a bonding tool. This makes it possible to increase the area of ​​the first portion 31 as viewed in the thickness direction z, thereby expanding the formation areas of the multiple first recesses 311a and the multiple second recesses 312a. This configuration further enhances the anchor effect of the multiple first recesses 311a and the multiple second recesses 312a, which is preferable for improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bondability between the first portion 31 (first conductive member 30) and the first bonding layer 38.

[0083] Third Embodiment: Figures 23 to 25 show a semiconductor device according to a third embodiment of the present disclosure. Figure 23 is a partial plan view showing a semiconductor device A30 according to this embodiment. Figure 24 is a cross-sectional view taken along line XXIV-XXIV in Figure 23. Figure 25 is a partially enlarged cross-sectional view taken along line XXV-XXV in Figure 23. In Figure 23, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A30 of this embodiment differs from the semiconductor device A10 described above in the configuration of the first conductive member 30 and the configuration of the second conductive member 40.

[0084] In the present embodiment, the second conductive member 40 is conductively joined to the first portion 31 of the first conductive member 30 and the pad portion 131 of the third lead 13. The second conductive member 40 is made of, for example, a metal plate material. The constituent material of the second conductive member 40 includes, for example, Cu (copper). The second conductive member 40 is a metal plate material that is appropriately bent. In the present embodiment, the second conductive member 40 has a third portion 41, a fourth portion 42, and a second intermediate portion 43.

[0085] The third portion 41 is joined to the first portion 31 of the first conductive member 30 via a joining layer 49. The joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste. The third portion 41 is electrically connected to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31). In the illustrated example, the third portion 41 is located at the end of the second conductive member 40 on the x2 side in the first direction x.

[0086] The fourth portion 42 is joined to the pad portion 131 of the third lead 13 via a joining layer 49, and is a portion that electrically connects the second conductive member 40 to the third lead 13. The joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the fourth portion 42 is located at the end of the second conductive member 40 on the x1 side in the first direction x.

[0087] The second intermediate portion 43 is located between the third portion 41 and the fourth portion 42 when viewed in the thickness direction z. The second intermediate portion 43 is connected to the third portion 41 and the fourth portion 42. The portions of the second intermediate portion 43 that connect the third portion 41 and the fourth portion 42 are bent when viewed in the second direction y. The portions of the second intermediate portion 43 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z relative to the third portion 41 and the fourth portion 42. Furthermore, the portions of the second intermediate portion 43 other than the bent portions are located on the y2 side in the second direction y as they move toward the x1 side in the first direction x, and extend in a direction intersecting the first direction x and the second direction y.

[0088] In the first surface 311 of the first conductive member 30 (first portion 31), no first recess 311a is formed on the x1 side in the first direction x and at the center in the second direction y as viewed in the thickness direction z. The third portion 41 (second conductive member 40) is joined to a portion of the first surface 311 where no first recess 311a is formed. As viewed in the thickness direction z, the multiple first recesses 311a surround the joint portion between the first portion 31 and the second conductive member 40.

[0089] In this embodiment, the first portion 31 is U-shaped as viewed in the thickness direction z. The first portion 31 is also provided on both sides of the second electrode 22 in the first direction x as viewed in the thickness direction z, and overlaps most of the first electrode 21 as viewed in the thickness direction z. The multiple first recesses 311a are also formed in the first portion 31 on both sides of the second electrode 22 in the first direction x as viewed in the thickness direction z.

[0090] In the semiconductor device A30, the first surface 311 has an uneven shape due to a plurality of first recesses 311a formed in the first portion 31. The first surface 311 is in contact with the sealing resin 60. Therefore, the anchor effect can improve adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60. Furthermore, the second surface 312 has an uneven shape due to a plurality of second recesses 312a formed in the first portion 31. The second surface 312 is in contact with the first bonding layer 38. Therefore, the anchor effect can improve bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38. This improves the reliability of the semiconductor device A30. In addition, the semiconductor device A30 exhibits the same effects as the semiconductor device A10.

[0091] Furthermore, in the semiconductor device A30, the second conductive member 40 is conductively joined to the first portion 31 (first conductive member 30) and the third lead 13. The second conductive member 40 is conductively joined to the first electrode 21 via the first conductive member 30. In this embodiment, there is no need to provide a space for bonding a wire to the first electrode 21 using a bonding tool. This allows the area of ​​the first portion 31 to be increased as viewed in the thickness direction z, thereby enabling the formation regions of the multiple first recesses 311a and the multiple second recesses 312a to be expanded. This configuration further enhances the anchor effect of the multiple first recesses 311a and the multiple second recesses 312a, which is preferable for improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bondability between the first portion 31 (first conductive member 30) and the first bonding layer 38.

[0092] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0093] In the above embodiment, a discrete package has been described as an example, in which a lead (first lead 11) is provided as a first conductive support member and one semiconductor element 20 is mounted on the base 111 of the first lead 11. However, the present disclosure is not limited to this. For example, a configuration may be possible in which a plurality of power semiconductor chips are provided as semiconductor elements and the plurality of power semiconductor chips are mounted on a copper plate or a DBC (Direct Bonded Copper) substrate. In this case, the metal layer of the copper plate or DBC substrate corresponds to the first conductive support member of the present disclosure.

[0094] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first conductive support member having a base; a semiconductor element mounted on one side in a thickness direction of the base and having a first electrode arranged on one side in the thickness direction; a second conductive support member arranged at a distance from the base in a first direction perpendicular to the thickness direction; a first conductive member conductively joined to the first electrode and the second conductive support member; and a sealing resin covering the semiconductor element, the first conductive member, and at least a portion of each of the first conductive support member and the second conductive support member, wherein the first conductive member includes a first portion joined to the first electrode via a conductive first bonding layer, the first portion having a first surface facing one side in the thickness direction and a second surface facing the other side in the thickness direction, and the first portion having a plurality of first recesses recessed from the first surface and a plurality of second recesses recessed from the second surface. Supplementary note 2. The semiconductor device according to Supplementary Note 1, wherein the plurality of first recesses and the plurality of second recesses are arranged in a direction perpendicular to the thickness direction and each comprise a plurality of grooves extending linearly.Supplementary Note 3. The semiconductor device according to Supplementary Note 1 or 2, wherein the first conductive member includes a second portion bonded to the second conductive support member via a second bonding layer having conductivity, the second portion having a third surface facing one side in the thickness direction and a fourth surface facing the other side in the thickness direction, and the second portion is formed with a plurality of third recesses recessed from the third surface and a plurality of fourth recesses recessed from the fourth surface.Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the plurality of third recesses and the plurality of fourth recesses are arranged in a direction perpendicular to the thickness direction and each comprise a plurality of grooves extending linearly.Supplementary Note 5. The semiconductor device of Appendix 3 or 4, wherein the first conductive member is located between the first portion and the second portion when viewed in the thickness direction and includes a first intermediate portion connected to the first portion and the second portion, the first intermediate portion having a fifth surface located on one side in the thickness direction and a sixth surface located on the other side in the thickness direction, and the first intermediate portion is formed with a plurality of fifth recesses recessed from the fifth surface and a plurality of sixth recesses recessed from the sixth surface.Appendix 6. The semiconductor device according to any one of Appendixes 1 to 5, wherein the first conductive member has a side surface facing a direction perpendicular to the thickness direction, and wherein the first conductive member has a plurality of seventh recesses recessed from the side surface. Appendix 7. The semiconductor device according to any one of Appendixes 1 to 6, wherein the first conductive member extends with the first direction as its longitudinal direction. Appendix 8. The semiconductor device according to any one of Appendixes 1 to 7, wherein the first conductive member is made of a metal plate material. Appendix 9. The semiconductor device according to Appendix 8, wherein a constituent material of the first conductive member includes copper. Appendix 10. The semiconductor device according to any one of Appendixes 1 to 9, further comprising: a third conductive support member and a second conductive member arranged at a distance from the base and the second conductive support member, and the second conductive member is electrically connected to the first electrode and the third conductive support member. Appendix 11. The semiconductor device according to Appendix 10, wherein the third conductive support member is disposed at a distance from the second conductive support member in the thickness direction and a second direction perpendicular to the first direction. Appendix 12. The semiconductor device according to Appendix 10 or 11, wherein the second conductive member is conductively joined to the first portion and the third conductive support member. Appendix 13. The semiconductor device according to Appendix 12, wherein the plurality of first recesses surround a joining portion between the first portion and the second conductive member when viewed in the thickness direction. Appendix 14. The semiconductor device according to Appendix 12 or 13, wherein the second conductive member is made of a metal plate material. Appendix 15. The semiconductor device according to Appendix 12 or 13, wherein the second conductive member is a bonding wire. Appendix 16. 16. The semiconductor device of any one of appendices 10 to 15, further comprising a fourth conductive support member and a third conductive member spaced apart from the base in the first direction, wherein the semiconductor element has a second electrode arranged on one side of the thickness direction, the fourth conductive support member being spaced apart from the third conductive support member in a second direction perpendicular to the thickness direction and the first direction, and the third conductive member being conductively joined to the second electrode and the fourth conductive support member.Supplementary Note 17. The semiconductor device according to Supplementary Note 16, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, the first electrode is the source electrode, the second electrode is the gate electrode, and the drain electrode is disposed on the other side of the semiconductor element in the thickness direction and is conductively joined to the base. Supplementary Note 18. A vehicle comprising a power conversion device configured to include the semiconductor device according to Supplementary Note 17.

[0095] A10, A11, A12, A13, A14, A20, A30: semiconductor device B1: vehicle 11: first lead (first conductive support member) 111: base 111A: first main surface 111B: first back surface 111C: through hole 112: terminal portion 12: second lead (second conductive support member) 121: pad portion 122: terminal portion 13: third lead (third conductive support member) 131: pad portion 132: terminal portion 14: fourth lead (fourth conductive support member) 141: pad portion 142: terminal portion 20: semiconductor element 21: first electrode (source electrode) 22: second electrode (gate electrode) 23: third electrode (drain electrode) 25: semiconductor layer 29: bonding layer 30: first conductive member 30A, 30B: Side surface 301: Seventh recess 31: First portion 311: First surface 311a: First recess 312: Second surface 312a: Second recess 32: Second portion 321: Third surface 321a: Third recess 322: Fourth surface 322a: Fourth recess 33: First intermediate portion 331: Fifth surface 331a: Fifth recess 332: Sixth surface 332a: Sixth recess 38: First bonding layer 39: Second bonding layer 40: Second conductive member 41: Third portion 42: Fourth portion 43: Second intermediate portion 49: Bonding layer 50: Third conductive member 60: Sealing resin 61: Resin main surface 62: Resin back surface 63: First resin side surface 64: First resin side surface 65: Opening 66: Mounting hole 67: Recess 80: Charging facility 81: AC-DC converter (power converter) 82: Power receiving device 83: Storage battery 84: Drive system

Claims

1. a first conductive support member having a base; a semiconductor element mounted on one side of the base in a thickness direction and having a first electrode disposed on the one side in the thickness direction; a second conductive support member disposed apart from the base in a first direction perpendicular to the thickness direction; a first conductive member conductively joined to the first electrode and the second conductive support member; a sealing resin that covers the semiconductor element, the first conductive member, and at least a portion of each of the first conductive support member and the second conductive support member; the first conductive member includes a first portion bonded to the first electrode via a first bonding layer having electrical conductivity; The first portion has a first surface facing one side in the thickness direction and a second surface facing the other side in the thickness direction, The semiconductor device, wherein the first portion has a plurality of first recesses recessed from the first surface and a plurality of second recesses recessed from the second surface.

2. 2. The semiconductor device according to claim 1, wherein the plurality of first recesses and the plurality of second recesses are arranged in a direction perpendicular to the thickness direction and each of the first recesses and the second recesses is formed by a plurality of grooves extending linearly.

3. the first conductive member includes a second portion joined to the second conductive support member via a second bonding layer having electrical conductivity; the second portion has a third surface facing one side in the thickness direction and a fourth surface facing the other side in the thickness direction, The semiconductor device according to claim 1 , wherein the second portion is formed with a plurality of third recesses recessed from the third surface and a plurality of fourth recesses recessed from the fourth surface.

4. 4. The semiconductor device according to claim 3, wherein the third recesses and the fourth recesses are arranged in a direction perpendicular to the thickness direction and each of the third recesses and the fourth recesses is formed by a plurality of grooves extending linearly.

5. the first conductive member includes a first intermediate portion located between the first portion and the second portion as viewed in the thickness direction and connected to the first portion and the second portion; the first intermediate portion has a fifth surface located on one side in the thickness direction and a sixth surface located on the other side in the thickness direction, 4. The semiconductor device according to claim 3, wherein the first intermediate portion is formed with a plurality of fifth recesses recessed from the fifth surface and a plurality of sixth recesses recessed from the sixth surface.

6. the first conductive member has a side surface facing a direction perpendicular to the thickness direction, The semiconductor device according to claim 1 , wherein said first conductive member has a plurality of seventh recesses recessed from said side surface.

7. The semiconductor device according to claim 1 , wherein the first conductive member extends with the first direction as a longitudinal direction.

8. 7. The semiconductor device according to claim 1, wherein said first conductive member is made of a metal plate.

9. The semiconductor device according to claim 8 , wherein the first conductive member is made of a material containing copper.

10. a third conductive support member disposed at a distance from the base and the second conductive support member, and a second conductive member; 7. The semiconductor device according to claim 1, wherein said second conductive member is electrically connected to said first electrode and said third conductive support member.

11. The semiconductor device according to claim 10 , wherein the third conductive support member is disposed spaced apart from the second conductive support member in the thickness direction and in a second direction perpendicular to the first direction.

12. The semiconductor device according to claim 10 , wherein the second conductive member is conductively joined to the first portion and the third conductive support member.

13. The semiconductor device according to claim 12 , wherein the plurality of first recesses surround a joint between the first portion and the second conductive member when viewed in the thickness direction.

14. The semiconductor device according to claim 12 , wherein the second conductive member is made of a metal plate.

15. The semiconductor device according to claim 12 , wherein the second conductive member is a bonding wire.

16. a fourth conductive support member and a third conductive member, the fourth conductive support member and the third conductive member being spaced apart from the base in the first direction; the semiconductor element has a second electrode disposed on one side in the thickness direction, the fourth conductive support member is disposed spaced apart from the third conductive support member in the thickness direction and in a second direction perpendicular to the first direction, The semiconductor device according to claim 10 , wherein the third conductive member is conductively joined to the second electrode and the fourth conductive support member.

17. the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode; the first electrode is the source electrode; the second electrode is the gate electrode, The semiconductor device according to claim 16 , wherein the drain electrode is disposed on the other side of the semiconductor element in the thickness direction and is conductively joined to the base portion.

18. A vehicle comprising a power conversion device including the semiconductor device according to claim 17.