Analysis device

Abstract

The analysis device (100A, 100B, 100C) of the present disclosure includes an optical medium (30), a first light source (10), a second light source (20), a first optical path adjustment mechanism (11), and a detector (40). The optical medium has a contact surface (30a) with which a measurement object comes into contact. The first light source generates a probe light (L1). The second light source generates an excitation light (L2). The probe light is incident on the optical medium, reflected at a reflection position (P) on the contact surface, and emitted from the optical medium. The excitation light is incident on the optical medium and irradiated onto an irradiation area (R) on the contact surface. The reflection position overlaps with the irradiation area. The first optical path adjustment mechanism adjusts the optical path of the probe light before it is incident on the optical medium so as to change the reflection position within the range of the irradiation area. The detector detects the probe light emitted from the optical medium.

Description

[Technical field]

[0001] The present disclosure relates to an analytical device. [Background technology]

[0002] JP 2017-519214 A (Patent Document 1) describes a measurement device. The measurement device described in Patent Document 1 performs non-invasive measurement of a measurement object using excitation light and probe light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2017-519214 Summary of the Invention [Problem to be solved by the invention]

[0004] The surface of the object to be measured has irregularities. The measurement device described in Patent Document 1 lacks measurement stability due to the irregularities on the surface of the object to be measured. The present disclosure has been made in consideration of the problems of the conventional technology as described above. More specifically, the present disclosure provides an analysis device capable of stable measurement of an object to be measured having an irregular surface. [Means for solving the problem]

[0005] The analysis device of the present disclosure includes an optical medium, a first light source, a second light source, a first optical path adjustment mechanism, and a detector. The optical medium has a contact surface with which a measurement object comes into contact. The first light source generates a probe light. The second light source generates an excitation light. The probe light is incident on the optical medium, reflected at a reflection position on the contact surface, and emitted from the optical medium. The excitation light is incident on the optical medium, and irradiated onto an irradiation area on the contact surface. The reflection position overlaps with the irradiation area. The first optical path adjustment mechanism adjusts the optical path of the probe light before it is incident on the optical medium so as to change the reflection position within the range of the irradiation area. The detector detects the probe light emitted from the optical medium. Effect of the Invention

[0006] The analytical device of the present disclosure is capable of performing stable measurements on objects having uneven surfaces. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram of an analysis device 100A. [Diagram 2] 2 is a plan view of the optical medium 30 as viewed from the upper surface 30a side. [Diagram 3] FIG. 4 is a process diagram showing the operation of the analysis device 100A. [Figure 4A] FIG. 11 is a first schematic diagram illustrating the effect of the analysis device 100A. [Figure 4B] FIG. 2 is a second schematic diagram illustrating the effect of the analysis device 100A. [Diagram 5] FIG. 1 is a schematic diagram of an analysis device 100B. [Figure 6] FIG. 1 is a schematic diagram of an analysis device 100C. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Embodiment 1 A description will be given of an analysis device according to embodiment 1. The analysis device according to embodiment 1 is designated as analysis device 100A.

[0009] (Configuration of the analytical device 100A) The configuration of the analysis device 100A will be described below.

[0010] Fig. 1 is a schematic diagram of an analysis device 100A. As shown in Fig. 1, the analysis device 100A includes a light source 10, an optical path adjustment mechanism 11, a light source 20, an optical chopper 21, an optical path adjustment mechanism 22, an optical medium 30, a detector 40, a lock-in amplifier 50, and a calculation unit 60.

[0011] The light source 10 generates a probe light L1. The probe light L1 is, for example, a laser light. The wavelength of the probe light L1 is a wavelength that can transmit the optical medium 30. Preferably, the probe light L1 is visible light or near-infrared light. Here, visible light is light having a wavelength in the range of 380 nm or more and 770 nm or more. Near-infrared light is light having a wavelength in the range of 780 nm or more and 2500 nm or less.

[0012] The probe light L1 is incident on the optical medium 30 via the optical path adjustment mechanism 11. The optical path adjustment mechanism 11 adjusts the optical path of the probe light L1 before it is incident on the optical medium 30. It is preferable that the optical path adjustment mechanism 11 is capable of adjusting the optical path of the probe light L1 while keeping the angle of incidence on the optical medium 30 constant. The optical path adjustment mechanism 11 is composed of, for example, a pair of mirrors 11a and 11b. The positions and angles of the mirrors 11a and 11b can be adjusted, for example, manually or automatically.

[0013] The optical path adjustment mechanism 11 is not limited to being composed of the mirrors 11a and 11b. For example, the optical path adjustment mechanism 11 may be configured to adjust the angle and position of the probe light L1 by providing a movable part at the emission part of the light source 10 without using a mirror and moving the movable part.

[0014] The light source 20 generates excitation light L2. The excitation light L2 is, for example, a laser light. The wavelength of the excitation light L2 is a wavelength that can transmit through the optical medium 30 and corresponds to the fingerprint spectrum of the measurement target component in the measurement target O. The excitation light L2 may include a plurality of lights having different wavelengths. Some of the plurality of light wavelengths correspond to the fingerprint spectrum of the measurement target component. The remaining of the plurality of light wavelengths are wavelengths that are not absorbed by the measurement target component. The light of the wavelength that is not absorbed by the measurement target component is used as a reference wavelength. The number of wavelengths included in the excitation light L2 may be four or more.

[0015] The excitation light L2 is, for example, infrared light. Here, infrared light is light having a wavelength in the range of 780 nm to 1 mm. The wavelength of the excitation light L2 is, for example, in the range of 8 μm to 10 μm. The light source 20 is, for example, a quantum cascade laser. Note that the quantum cascade laser is capable of generating a wideband laser light.

[0016] The excitation light L2 is incident on the optical medium 30 via the optical chopper 21 and the optical path adjustment mechanism 22. The excitation light L2 passes through the optical chopper 21 before passing through the optical path adjustment mechanism 22. The optical path adjustment mechanism 22 adjusts the optical path of the excitation light L2 after passing through the optical chopper 21 and before being incident on the optical medium 30.

[0017] The optical chopper 21 intensity-modulates the excitation light L2 with a specific frequency component. The optical chopper 21 has a blade. The optical chopper 21 periodically blocks the excitation light L2 by rotating the blade, thereby intensity-modulating the excitation light L2. The modulation frequency by the optical chopper 21 is, for example, 5 Hz or more and 100 Hz or less.

[0018] The optical path adjustment mechanism 22 adjusts the optical path of the excitation light L2 before it is incident on the optical medium 30. It is preferable that the optical path adjustment mechanism 22 can adjust the optical path of the excitation light L2 while keeping the angle of incidence on the optical medium 30 constant. The optical path adjustment mechanism 22 is composed of, for example, a pair of mirrors 22a and 22b. The positions and angles of the mirrors 22a and 22b can be adjusted, for example, manually or automatically. The optical path adjustment mechanism 22 is not limited to being composed of the mirrors 22a and 22b. For example, the optical path adjustment mechanism 22 may be provided with a movable part at the emission part of the light source 20 without using a mirror, and the angle and position of the excitation light L2 may be adjusted by moving the movable part.

[0019] The optical medium 30 has an upper surface 30a, a bottom surface 30b, a side surface 30c, and a side surface 30d. The upper surface 30a is a contact surface with which the measurement object O (shown by a dotted line in FIG. 1) comes into contact. That is, the measurement object O is placed on the optical medium 30, and the optical medium 30 functions as a measurement table. The measurement object O is, for example, a part of the subject's body such as a finger or a wrist. The bottom surface 30b is the opposite surface to the upper surface 30a. The side surface 30c is connected to the upper surface 30a at its upper end and to the bottom surface 30b at its lower end. The side surface 30d is the opposite surface to the side surface 30c. The side surface 30d is connected to the upper surface 30a at its upper end and to the bottom surface 30b at its lower end.

[0020] The optical medium 30 is made of a material that has high transmittance to the probe light L1 and the excitation light L2. Specific examples of the optical medium 30 include zinc sulfide (ZnS), zinc selenide (ZnSe), germanium (Ge), silicon (Si), and chalcogenide glass. These materials have high transmittance to infrared rays. The refractive index of the optical medium 30 changes with temperature.

[0021] The probe light L1 is incident on the optical medium 30 from the side surface 30c. When the probe light L1 is incident on the optical medium 30, it is refracted at the side surface 30c. The probe light L1 incident on the optical medium 30 is reflected (total reflection) at the upper surface 30a (contact surface with the measurement object O). The position of the upper surface 30a where the probe light L1 is reflected is defined as the reflection position P (see FIG. 2). The probe light L1 reflected at the upper surface 30a is emitted from the side surface 30d. When the probe light L1 is emitted from the optical medium 30, it is refracted at the side surface 30d. Note that the optical path of the probe light L1 in the optical medium 30 needs only to pass through a refractive index change region 30e described later, and may be totally reflected two or more times in the optical medium 30, or may pass near the upper surface 30a at an angle close to parallel to the upper surface 30a.

[0022] The excitation light L2 is incident on the optical medium 30 from the bottom surface 30b. The excitation light L2 passes through the optical medium 30, exits from the top surface 30a, and reaches the measurement object O. The region of the top surface 30a onto which the excitation light L2 is irradiated is defined as the irradiation region R (see FIG. 2). The irradiation of the excitation light L2 increases the temperature of the optical medium 30 in the vicinity of the irradiation region R. As described above, the refractive index of the material constituting the optical medium 30 changes with temperature, so that when the excitation light L2 is irradiated onto the top surface 30a, a refractive index change region 30e is formed in the vicinity of the irradiation region R.

[0023] FIG. 2 is a plan view of the optical medium 30 as viewed from the upper surface 30a side. As shown in FIG. 2, the reflection position P overlaps with the irradiation region R in a plan view. That is, the reflection position P is within the irradiation region R. The width of the irradiation region R, i.e., the beam diameter of the excitation light L2 irradiated to the upper surface 30a, is, for example, 100 μm or less from the viewpoint of increasing the refractive index in the refractive index change region 30e. The beam diameter of the probe light L1 at the reflection position P is smaller than the beam diameter of the excitation light L2 irradiated to the upper surface 30a (the width of the irradiation region R). The beam diameter of the probe light L1 at the reflection position P is, for example, 50 μm or less.

[0024] The reflection position P is adjusted by changing the optical path of the probe light L1 with the optical path adjustment mechanism 11. The position of the irradiation region R is adjusted by changing the optical path of the excitation light L2 with the optical path adjustment mechanism 22. However, the adjustment of the positions of the reflection position P and the irradiation region R is performed while maintaining the state in which the reflection position P is within the irradiation region R.

[0025] The detector 40 detects the probe light L1 emitted from the optical medium 30. More specifically, the detector 40 detects the position of the probe light L1 irradiated on the detector 40. As shown in FIG. 1, when the upper surface 30a is not irradiated with the excitation light L2, the probe light L1 travels on the optical path indicated by the dotted arrow in FIG. 1. As described above, when the upper surface 30a is irradiated with the excitation light L2, the refractive index change region 30e is formed, and the optical path of the probe light L1 is changed as indicated by the solid arrow in the figure due to the gradient of the change in the refractive index in the refractive index change region 30e. The detector 40 detects the change in the irradiation position of the probe light L1 on the detector 40 caused by such a change in the optical path. In addition, the detector 40 outputs a signal corresponding to the irradiation position of the probe light L1 on the detector 40. The detector 40 is, for example, composed of a four-segment photodiode.

[0026] The lock-in amplifier 50 reads the signal output from the detector 40. The lock-in amplifier 50 is connected to the optical chopper 21, and reads the signal output from the detector 40 in synchronization with the rotation of the blades of the optical chopper 21. Therefore, the lock-in amplifier 50 reads the signal output from the detector 40 in synchronization with the modulation frequency component of the excitation light L2. The calculation unit 60 acquires the signal read by the lock-in amplifier 50 and performs calculations on the signal.

[0027] When the optical chopper 21 modulates the excitation light L2 to a frequency f, the measurement signal has the same frequency and phase as the modulated excitation light L2, but has a different amplitude from the modulated excitation light L2. Therefore, multiplying the excitation light L2 by the measurement signal results in a signal consisting of a 2f frequency component and a DC component. Therefore, if only the DC component is measured using a low-pass filter, it is possible to remove noise components and perform highly accurate measurements.

[0028] (Operation of the analytical device 100A) The operation of the analysis device 100A will be described below.

[0029] Fig. 3 is a process diagram showing the operation of the analysis device 100A. As shown in Fig. 3, the operation of the analysis device 100A includes a leaving step S1, a position adjustment step S2, and a measurement step S3. In the leaving step S1, the measurement target O is placed on the optical medium 30 (upper surface 30a). After the leaving step S1, a position adjustment step S2 is performed.

[0030] In the position adjustment step S2, first, the light source 10 and the light source 20 generate the probe light L1 and the excitation light L2, respectively. At this time, the optical chopper 21 is also operated, so that the excitation light L2 is intensity-modulated. That is, at this time, a state in which the excitation light L2 is irradiated onto the measurement object O and a state in which the excitation light L2 is not irradiated onto the measurement object O are repeated. The state in which the excitation light L2 is not irradiated onto the measurement object O is set as a first state, and the state in which the excitation light L2 is not irradiated onto the measurement object O is set as a second state. Since the excitation light L2 is intensity-modulated by the optical chopper 21, the first state and the second state are periodically repeated.

[0031] When the excitation light L2 is irradiated to the measurement object O through the optical medium 30, it is absorbed inside the measurement object O. As a result, absorbed heat is generated in the measurement object O. The absorbed heat is propagated to the optical medium 30. When the absorbed heat is propagated to the optical medium 30, a refractive index change region 30e is formed. Since a temperature gradient is generated in the optical medium 30 due to the propagation of the absorbed heat, a refractive index gradient exists in the refractive index change region 30e. Therefore, in the second state, the probe light L1 is refracted not only when it enters the optical medium 30 and when it exits from the optical medium 30, but also when it passes through the refractive index change region 30e.

[0032] On the other hand, in the first state, the excitation light L2 is not irradiated to the measurement object O, so that the refractive index change region 30e is not formed in the optical medium 30. Therefore, in the first state, the probe light L1 is refracted only when it enters the optical medium 30 and when it exits from the optical medium 30. As a result, the position on the detector 40 where the probe light L1 is irradiated changes between the first state and the second state. The position on the detector 40 where the probe light L1 is irradiated in the first state is defined as the first position, and the position on the detector 40 where the probe light L1 is irradiated in the second state is defined as the second position. The detector 40 outputs a signal based on the difference between the first position and the second position, and the signal is read by the lock-in amplifier 50 and processed by the calculation unit 60.

[0033] Secondly, in the position adjustment process S2, after fixing the optical path of the excitation light L2, the optical path adjustment mechanism 11 adjusts the optical path of the probe light L1. This adjustment is performed so that the difference between the first position and the second position is maximized. Thirdly, in the position adjustment process S2, after fixing the optical path of the probe light L1, the optical path adjustment mechanism 22 adjusts the optical path of the excitation light L2. This adjustment is performed so that the difference between the first position and the second position is maximized. The above-mentioned adjustment of the optical path of the probe light L1 and the adjustment of the optical path of the excitation light L2 may be repeated multiple times. The adjustment of the optical path of the probe light L1 and the adjustment of the optical path of the excitation light L2 may be performed so that the contact area between the irradiation region R and the surface of the measurement object O is maximized. After the position adjustment process S2, a measurement process S3 is performed.

[0034] In the measurement step S3, the light source 20 generates, as the excitation light L2, light of a wavelength corresponding to the fingerprint spectrum of the measurement target component in the measurement target O. With the excitation light L2 being irradiated, the lock-in amplifier 50 reads a signal based on the difference between the first position and the second position, and the calculation unit 60 performs calculations based on the signal. If the measurement target component is sugar in blood, the excitation light L2 is absorbed by the sugar in the interstitial fluid near the surface of the measurement target O. Since the components in the interstitial fluid change in conjunction with the components in the blood, there is a correlation between the ratio of sugar in the interstitial fluid and the ratio of sugar in the blood (i.e., blood glucose level). Then, the absorption of the excitation light L2 by the sugar, i.e., the amount of heat generated in the measurement target O, changes depending on the ratio of sugar in the interstitial fluid, and the difference between the first position and the second position also changes accordingly. Therefore, by calculating the signal based on the difference between the first position and the second position while the excitation light L2 is irradiated, it is possible to measure the ratio of sugar in the interstitial fluid and, therefore, the blood glucose level.

[0035] The components to be measured are not limited to blood glucose levels. The components to be measured may be proteins, amino acids, sugars, fatty acids, hormones, neurotransmitters, and the like contained in interstitial fluid. In other words, the analysis device 100A is applicable to the measurement of various types of biological information. If the frequency of absorption by the components to be measured is f and the thermal diffusion coefficient of the object to be measured O is α, then the thermal diffusion length of the heat generated in the object to be measured O is (α / π·f) 1 / 2 Therefore, if the modulation frequency of the optical chopper 21 is set to 5 Hz or more and 100 Hz or less, it is possible to measure the interstitial fluid at a depth of several tens of μm from the surface of the measurement object O.

[0036] (Effects of the analytical device 100A) The effects of the analysis device 100A will be described below.

[0037] FIG. 4A is a first schematic diagram for explaining the effect of the analysis device 100A. FIG. 4B is a second schematic diagram for explaining the effect of the analysis device 100A. As shown in FIG. 4A and FIG. 4B, unevenness exists on the surface of the measurement object O. When the measurement object O is human skin, the unevenness existing on the surface of the measurement object O is, for example, a fingerprint, a sweat gland, or the like. The depth, width, and period of the unevenness are about several tens of μm to several hundreds of μm. In the example of a fingerprint, the depth of the unevenness is about 20 μm to 50 μm, and the period and width of the unevenness are about 300 μm to 500 μm. The measurement object O has a certain degree of elasticity. Therefore, the surface of the measurement object O is in close contact with the optical medium 30 (upper surface 30a) at the convex parts. On the other hand, the surface of the measurement object O is not in close contact with the optical medium 30 at the concave parts. That is, air exists between the surface of the measurement object O and the optical medium 30.

[0038] When air is present between the surface of the measurement object O and the optical medium 30, the excitation light L2 is likely to be reflected at both the interface between the optical medium 30 and the air and the surface of the measurement object O, so that the incidence efficiency of the excitation light L2 on the measurement object O decreases. That is, the amount of heat generated in the measurement object O due to the irradiation of the excitation light L2 decreases. In addition, since the thermal conductivity of air is low and the depth of the recesses on the surface of the measurement object O is several tens of μm or more, the heat generated in the measurement object O due to the irradiation of the excitation light L2 is difficult to be transferred from the recesses on the surface of the measurement object O to the optical medium 30. As a result, when air is present between the optical medium 30 and the surface of the measurement object O, the gradient of the refractive index in the refractive index change region 30e becomes small.

[0039] If there is a recess on the surface of the measurement object O facing the irradiation area R, the refractive index change area 30e is difficult to form, and the probe light L1 is not sufficiently refracted in the refractive index change area 30e in the second state, so the difference between the second position and the first position becomes small. As described above, since the width of the irradiation area R is small, about several hundred μm, even if the composition of the measurement object component in the measurement object O is the same, even if the position of the measurement object O on the optical medium 30 is only slightly shifted, the state of the presence of the recess on the surface of the measurement object O facing the irradiation area R changes, and the measurement result changes significantly. More specifically, even if the position of the surface of the measurement object O facing the irradiation area R is only slightly shifted, the signal value may decrease by one order of magnitude or more. In addition, it is difficult for the subject to intentionally control such a positional shift of about several tens of μm to several hundred μm.

[0040] In this regard, in the analysis device 100A, the position of the irradiation region R and the reflection position P are adjusted so that the difference between the first position and the second position is maximized prior to the measurement of the measurement target component in the measurement target O. The heat generated in the measurement target O per intensity of the excitation light L2 due to the irradiation of the excitation light L2 is constant. Therefore, the larger the contact area between the irradiation region R and the surface of the measurement target O, the easier it is for the probe light L1 to be refracted in the refractive index change region 30e, and the larger the difference between the second position and the first position. In other words, the larger the difference between the first position and the second position, the larger the contact area between the irradiation region R and the surface of the measurement target O. In this way, according to the analysis device 100A, the measurement is performed at a position where the contact state between the irradiation region R and the surface of the measurement target O is good, and stable measurement is possible for the measurement target O having an uneven surface.

[0041] Embodiment 2 An analysis device according to embodiment 2 will be described. The analysis device according to embodiment 2 is assumed to be analysis device 100B. Here, differences from analysis device 100A will be mainly described, and overlapping descriptions will not be repeated.

[0042] (Configuration of the analysis device 100B) The configuration of the analysis device 100B will be described below.

[0043] Fig. 5 is a schematic diagram of the analysis device 100B. As shown in Fig. 5, the analysis device 100B has a light source 10, an optical path adjustment mechanism 11, a light source 20, an optical chopper 21, an optical path adjustment mechanism 22, an optical medium 30, a detector 40, a lock-in amplifier 50, and a calculation unit 60. In this respect, the configuration of the analysis device 100B is common to the configuration of the analysis device 100A.

[0044] The analysis device 100B further has a beam diameter adjustment mechanism 23. The beam diameter adjustment mechanism 23 is disposed, for example, between the optical path adjustment mechanism 22 and the optical medium 30. The beam diameter adjustment mechanism 23 has a lens, and changes the size of the irradiation region R by changing the position of the lens on the optical path of the excitation light L2.

[0045] The beam diameter adjustment mechanism 23 sets the irradiation region R (beam diameter of the excitation light L2 on the upper surface 30a) as a first range when the position adjustment step S2 is being performed. The beam diameter adjustment mechanism 23 sets the irradiation region R as a second range when the measurement step S3 is being performed. The second range is smaller than the second range. The width of the first range and the width of the second range are, for example, 500 μm and 100 μm, respectively. In these respects, the configuration of the analysis device 100B differs from the configuration of the analysis device 100A.

[0046] (Effects of the analysis device 100B) The effects of the analysis device 100B will be described below.

[0047] In the position adjustment step S2, adjustment is performed so that the reflection position P is optimal within the range of the irradiation region R, so that the larger the irradiation region R, the easier it is to adjust the reflection position P. On the other hand, the smaller the irradiation region R is, that is, the more the excitation light L2 is concentrated in the irradiation region R, the larger the temperature gradient of the refractive index change region 30e and therefore the gradient of the refractive index, and the greater the refraction of the excitation light L2 becomes, resulting in a larger difference between the second position and the first position. Therefore, by the beam diameter adjustment mechanism 23 adjusting the irradiation region R so that the second range is smaller than the first range, it becomes possible to improve the measurement accuracy while facilitating the adjustment of the measurement position.

[0048] Embodiment 3 An analysis device according to embodiment 3 will be described. The analysis device according to embodiment 3 is assumed to be analysis device 100C. Here, differences from analysis device 100A will be mainly described, and overlapping descriptions will not be repeated.

[0049] (Configuration of the analysis device 100C) The configuration of the analysis device 100C will be described below.

[0050] Fig. 6 is a schematic diagram of the analysis device 100C. As shown in Fig. 6, the analysis device 100C includes a light source 10, an optical path adjustment mechanism 11, a light source 20, an optical chopper 21, an optical path adjustment mechanism 22, an optical medium 30, a detector 40, a lock-in amplifier 50, and a calculation unit 60. In this respect, the configuration of the analysis device 100C is common to the configuration of the analysis device 100A.

[0051] The analysis device 100C further includes an observation mechanism 70. The observation mechanism 70 is capable of observing the interface between the surface of the measurement object O and the optical medium 30. A specific example of the observation mechanism 70 is a camera having sensitivity to at least one of the probe light L1 and the excitation light L2. In these respects, the configuration of the analysis device 100C is different from the configuration of the analysis device 100A.

[0052] (Effects of the analysis device 100C) The effects of the analysis device 100C will be described below.

[0053] In the analysis device 100C, since the contact state between the optical medium 30 and the surface of the measurement object O can be observed by the observation mechanism 70 in the position adjustment step S2, it is possible to estimate the contact area at the measurement point, that is, to perform the position adjustment step S2 while checking the contact state at the measurement point. When the observation mechanism 70 has sensitivity to at least one of the probe light L1 and the excitation light L2, the measurement position can be easily identified.

[0054] (Additional Note) Aspects of the present disclosure are summarized in the appendix.

[0055] <Appendix 1> An optical medium; A first light source; A second light source; A first optical path adjustment mechanism; a detector; the optical medium has a contact surface with which a measurement object comes into contact, the first light source generates a probe light; The second light source generates excitation light; the probe light is incident on the optical medium, reflected at a reflection position on the contact surface, and emitted from the optical medium; The excitation light is incident on the optical medium and irradiated onto an irradiation area of ​​the contact surface; The reflection position overlaps with the illumination area, the first optical path adjustment mechanism adjusts an optical path of the probe light before being incident on the optical medium so as to change the reflection position within a range of the irradiation area; The detector detects the probe light emitted from the optical medium.

[0056] <Appendix 2> Further comprising a second optical path adjustment mechanism, The analytical device of claim 1, wherein the second optical path adjustment mechanism changes the position of the irradiation area.

[0057] <Appendix 3> The analytical device described in Appendix 2, wherein the first optical path adjustment mechanism and the second optical path adjustment mechanism change the reflection position and the position of the irradiation area, respectively, while the excitation light is being irradiated.

[0058] <Appendix 4> The analytical apparatus according to claim 2 or 3, wherein the first optical path adjustment mechanism changes the reflection position so that an intensity of the probe light detected by the detector is maximized while the excitation light is irradiated onto the irradiation region.

[0059] <Appendix 5> Further comprising a beam diameter adjustment mechanism, The analytical device of claim 3, wherein the beam diameter adjustment mechanism sets the range of the irradiation area to a first range when the first optical path adjustment mechanism and the second optical path adjustment mechanism are changing the reflection position and the position of the irradiation area, respectively, and sets the range of the irradiation area to a second range smaller than the first range when measurement of the object to be measured is being performed.

[0060] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of this application is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0061] 10 light source, 11 optical path adjustment mechanism, 11a, 11b mirror, 20 light source, 21 optical chopper, 22 optical path adjustment mechanism, 22a, 22b mirror, 23 beam diameter adjustment mechanism, 30 optical medium, 30a upper surface, 30b bottom surface, 30c, 30d side surface, 30e refractive index change region, 40 detector, 50 lock-in amplifier, 60 calculation unit, 70 observation mechanism, 100A, 100B, 100C analysis device, L1 probe light, L2 excitation light, O measurement object, P reflection position, R irradiation region, S1 resting process, S2 position adjustment process, S3 measurement process.

Claims

1. An optical medium; A first light source; A second light source; A first optical path adjustment mechanism; a detector; the optical medium has a contact surface with which a measurement object comes into contact, The first light source generates a probe light; The second light source generates excitation light; the probe light is incident on the optical medium, reflected at a reflection position on the contact surface, and emitted from the optical medium; The excitation light is incident on the optical medium and irradiated onto an irradiation area of ​​the contact surface; The reflection position overlaps with the illumination area, the first optical path adjustment mechanism adjusts an optical path of the probe light before being incident on the optical medium so as to change the reflection position within a range of the irradiation area; The detector detects the probe light emitted from the optical medium.

2. Further comprising a second optical path adjustment mechanism; The analyzer according to claim 1 , wherein the second optical path adjustment mechanism changes a position of the irradiation area.

3. The analyzer according to claim 2 , wherein the first optical path adjustment mechanism and the second optical path adjustment mechanism change the reflection position and the position of the irradiation area, respectively, while the excitation light is being irradiated.

4. 4. The analysis device according to claim 2, wherein the first optical path adjustment mechanism changes the reflection position so that an intensity of the probe light detected by the detector is maximized while the excitation light is irradiated onto the irradiation region.

5. Further comprising a beam diameter adjustment mechanism, 4. The analytical device according to claim 3, wherein the beam diameter adjustment mechanism sets a range of the irradiation area to a first range when the first optical path adjustment mechanism and the second optical path adjustment mechanism are changing the reflection position and the position of the irradiation area, respectively, and sets a range of the irradiation area to a second range smaller than the first range when measurement of the object to be measured is being performed.