Substrate Processing Equipment

Claims

1. a chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure the temperature of the top plate; A control unit; Equipped with The control unit is configured to control the at least one actuator in response to the temperature of the top plate measured by the at least one temperature sensor. Substrate processing equipment.

2. A chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure a temperature distribution of the top plate; A control unit; Equipped with the at least one actuator includes a plurality of actuators; the plurality of actuators are configured to bias a plurality of portions within a surface of the top plate against the base member; The control unit is configured to control the plurality of actuators in accordance with the temperature distribution of the top plate measured by the at least one temperature sensor. Substrate processing equipment.

3. 3. The substrate processing apparatus of claim 2, wherein the control unit is configured to control the plurality of actuators in accordance with the temperature distribution of the top plate measured by the at least one temperature sensor and a specified temperature distribution of the top plate so as to bring the temperature distribution of the top plate closer to the specified temperature distribution.

4. A substrate processing apparatus as described in Claim 2, wherein the multiple parts are arranged on at least one circle around the central axis of the top plate.

5. A chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure the temperature of the top plate; A control unit; Equipped with the upper assembly further includes a heat transfer sheet disposed between the top plate and the base member; The control unit When the temperature of the top plate measured by the at least one temperature sensor is higher than a target temperature, the at least one actuator is controlled to increase a contact pressure of the top plate against the heat transfer sheet; When the temperature of the top plate measured by the at least one temperature sensor is lower than the target temperature, the at least one actuator is controlled to reduce the contact pressure of the top plate against the heat transfer sheet. It is configured as follows: Substrate processing equipment.

6. A chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure the temperature of the top plate; A control unit; Equipped with the upper assembly further includes a heat transfer sheet disposed between the top plate and the base member; The control unit controlling the at least one actuator to adjust a contact pressure of the top plate against the heat transfer sheet to set the temperature of the top plate to a first target temperature during an execution period of a first process in the chamber; and controlling the at least one actuator to adjust the contact pressure of the top plate against the heat transfer sheet to set the temperature of the top plate to a second target temperature different from the first target temperature during the execution of a second process in the chamber. It is configured as follows: Substrate processing equipment.

7. the first process is a plasma treatment of a substrate in the chamber; the second process is plasma cleaning of the chamber; the second target temperature is higher than the first target temperature; the contact pressure during the execution of the second process is lower than the contact pressure during the execution of the first process; The substrate processing apparatus according to claim 6 .

8. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the at least one actuator includes an actuator connected to the center of the top plate and configured to urge the center of the top plate against the base member.

9. The at least one actuator includes a plurality of actuators, The plurality of actuators are configured to bias a plurality of portions within the surface of the top plate against the base member.

8. The substrate processing apparatus according to claim 1, 5, 6, or 7.

10. A substrate processing apparatus as described in Claim 9, wherein the multiple parts are arranged on at least one circle around the central axis of the top plate.

11. The at least one actuator includes a rod and a drive configured to move the rod up and down; 8. The substrate processing apparatus according to claim 1, wherein the rod includes a lower end that is engaged with the top plate and extends upward.

12. A substrate processing apparatus as described in Claim 11, wherein the drive unit is arranged within the base member.

13. A substrate processing apparatus as described in claim 11, wherein the at least one actuator includes an air cylinder.

14. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the upper assembly further includes a clamp that clamps the peripheral edge of the top plate and the peripheral edge of the base member.

15. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the upper assembly further includes a heat transfer sheet arranged between the top plate and the base member.

16. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the base member has a refrigerant flow path.

17. The substrate processing apparatus is a capacitively coupled plasma processing apparatus, and further includes a substrate support disposed in the chamber; the top plate and the base member constitute an upper electrode of the capacitively coupled plasma processing apparatus. The substrate processing apparatus according to any one of claims 1 to 7.