Compounds comprising a plurality of phosphazene moieties for forming a patterning coating and devices incorporating same
The use of cyclophosphazene-based patterning coatings in opto-electronic devices addresses precision and yield issues in conductive layer patterning, achieving precise patterns and improved manufacturing efficiency.
Patent Information
- Application Number
- PCT/IB2024/054105
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-03-15
- Filing Date
- 2024-04-27
- Publication Date
- 2025-11-06
AI Technical Summary
Existing methods for patterning conductive layers in opto-electronic devices, such as OLEDs, face challenges with high evaporation temperatures impacting the re-use of metal masks and accuracy of patterns, and debris generation during laser drilling, which affect manufacturing yield and applicability to devices with complex topographies.
A patterning coating comprising cyclophosphazene moieties with fluorine-containing functional groups is used to selectively deposit conductive materials, inhibiting nucleation in non-desired areas and forming precise patterns without the need for metal masks or laser drilling.
This approach enhances pattern precision and manufacturing yield by allowing selective deposition of conductive materials, reducing costs and complexity, and improving applicability to devices with various topographical features.
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Figure IB2024054105_06112025_PF_FP_ABST
Abstract
Description
COMPOUNDS COMPRISING A PLURALITY OF PHOSPHAZENE MCHETIES FORFORMING A PATTERNING COATING AND DEVICES INCORPORATINGSAMERELATED APPLICATIONS
[0001] The present application claims the benefit of priority to: US Provisional Patent Application No 63 / 499,168 liked 28 April 2023 , US Provisional Patent Application No, 63 / 589,665 filed 11 October 2023, and US Provisional Patent Application No, 63 / 566,161 filed 15 March 2024, the contents of each of which are in corporeted herein by reference in their enhrety.TECHNICAL FIELD
[0002] The present disclosure relates to layered semiconductor devices, and In some non- lirniting examples, to a layered opto-electronic device having a plurality of sub -pixel emissive regions and a plurality of hght transmissive regions, each sub -pixel comprising first and second electrodes separated by a semiconductor layer, m which at least one of: the electrodes, a conductive coating electrically coupled therewith, and transmissive regions, may be patterned by depositing a patterning coating that may at least one of: act, and be, a nucleation inhibiting coating for patterning at least one conductive deposited material such as may be deposited during a device fabrication process, to form such an electrode, and conductive coating, and to preclude deposition of such deposited material to form such transmissive region(s).BACKGROUND
[0003] In an opto-electronic device such as an organic light emitting diode (OLED), at toast one semiconducting layer comprising an emissive layer may be disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode may be electrically coupled with a power source and respectively generate holes and electrons that migrate toward each other through the at least one semiconducting layer. When a pair of holes andelectrons combine, EM radiation, in the form of a photon, may be emitted by the emissive layer.
[0004] OLED display panels, such as an active-matrix OLED (AMOLED) panel, may comprise a plurality of pixels, each pixel further comprising a plurality of (Including without limitation, one of: three, arid four) sub-pixels . In some non -limiting examples, ttie various sub-pixels of a pixel may be characterized by one of: three, and four, different colors, including without limitation, R(ed), G(reen), and B(lue). Each (sub-) pixel may have an associated emissive region, comprising a stack of an associated pair of electrodes and at least one semiconducting layer between them. In some non-limiting examples, each sub- pixel of a pixel may emit EM radiation, including without limitation, photons, that have an associated wavelength spectrum characterized by a given color, including without limitation, one of, R(ed), G(reen), B(lue), and W(hite). In some non-limiting examples, the (sub-) pixels may be selectively driven by a driving circuit comprising at least one thin-film transistor (TFT) structure electrically coupled with conductive metal lines, In some non- limiting examples, within a substrate upon which the electrodes and the at least one semiconducting layer are deposited. Venous coatings (layers) of such panels may, in some non-limlting examples, be formed by vacuum-based deposition processes
[0005] In AM OLE D panels, EM radiation may be emitted by a sub-pixel when a voltage is applied across an anode and a cathode of the sub-pixel. By controlling the voltage applied across the anode and the cathode, it may be possible to control the emission of EM radiation from each sub-pixel of stach penel. In cases where a ccrembn cathode is provided across multiple sub-pixels, the voltage across the anode and the cathode in each sub-pixel may be controlled by modulating the voltage of the anode. In some nun-limiting examples, the adjacent anodes may be spaced apart in a lateral aspect, and at least one non -emissive region may be provided therebetween.
[0006] hi some non-limiting examples, there may be an aim to provide a conductive deposited layer in a pattern for each (sub-) pixel of the panel across at least one of: cross- sectional, end lateral, aspect thereof, by selective deposition of a dosed coating of the conductive deposited material to form a device feature, such as, without limitation, at least one of: an electrode, end a conductive element electrically coupled therewith, and a regionthat is substantially devoid of the deposited material, including without limitation, to define a transparent region of the device, during the OLED manufacturing process.
[0007] One method fordoing so, In some non -limiting application, involves the interposition of a fins metal mask (FMM) during deposition of the deposited material However, In some non-limiting dimples, such deposited material may have substantially high evapdration temperatures, which may impact at least one of: the ability to re-use the FMM, and the accuracy of the pattern that may be achieved, with attendant increases in cost, effort, and complexity
[0008] One method for doing so , In some non -limiting examples, involves depositing the electrode material and thereafter removing, including by a laser drilling process, unwanted regions thereof to form the pattern. However, the removal process often involves one of the: creation, and presence, of debris, which may affect the yield of the manufacturing process.
[0009] In some non -limiting examples, such methods may have reduced applicability in certain applications. In some non-limiting examples, such methods may have reduced applicability with devices having certain topographical features.
[0010] In some non-limiting applications, there may be an aim to provide an improved mechanism for providing selective deposition of a conductive deposited materialBRIEF DESCRIPTION OF THE DRAWINGS
[0011] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numerals in different fig tires indicate at least one of: identical and In some non-limiting examples, at least one of analogous, and corresponding elements, and in which:
[0012] FIG. 1 is a simplified block diagram from a longitudinal aspect, of an example device having a plurality of layers in a lateral aspect, formed by selective deposition of a patterning coating in a first portion of the lateral aspect, followed by deposition of a closed coating of deposited material in a second portion thereof, according to an example in the present disclosure;
[0013] FIG. 2 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG. 1, in which the closed coating of deposited material in the second portion forms a second electrode of an opto-electronic device, according to an example in the present disclosure:
[0014] FIG. 3 is a schematic diagram iltusfradfig an exemple cross-sectional view of art example display panel having a plurality of layers, comprising at least one aperture therewithim through which at least one electromagnetic signal may be exchanged according to an example in the present disclosure,
[0015] FIG. 4 is a schematic diagram showing an example process for depositing s patterning coating in a pattern ©n an exposed layer surface of an underlying layer in an example version of the device of FIG. 1 , according to an example in the present disclosure;
[0016] FIG. 5 is a schematic diagram showing an example process for depositing a deposited material in the second portion on an exposed layer surface that comprises the deposited pattern of the patterning coating of FIG, 3, where the patterning canting is a nucleation -inhibiting coating (NIC);
[0017] FIG. 6A is a schematic diagram illustrating an example version of the device of FIG. 1 in a cross-sectional view;
[0018] FIG. 6B is a schematic diagram illustrating the device of FIG. 6A in a complementary plan view;
[0019] FIGS. 7A-7B are schematic diagrams that show various potential behaviours of a patterning coating at a deposition interface with a deposited layer in an example version of the device of FIG. 1 according to various examples in the present disclosure;
[0020] FIGs. 8A-8H are simplified block diagrams from a cross-sectional aspect, of example versions of the device of FIG, 1, showing various examples of possible interactions between the particle structure patterning coating and the particle structures according to examples in the present disclosure;
[0021] FIG. 9 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 2 with additional example deposition steps according to an example in the present disclosure;
[0022] FIG. 10 is a schematic diagram that may show example stages of an example process for mandfedth ring an exampfe version of an OLED device having Sub-pixei regions having a second electrode of different thickness according to an example in the present disclosure;
[0023] FIG. 11 a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device m which a second electrode is coupled with an auxiliary electrode according to an example in the present disclosure;
[0024] FIG. 12 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device having a partition and a shaded region, such as a recess, in a non -emissive region thereof according to an example in the present disclosure;
[0025] FIGs. 13A-13B are schematic diagrams that show example cross-sect tonal views of an example OLED device having a partition and a shaded region, such as an aperture, In a non -emissive region, according to various examples in the present disclosure;
[0026] FIG. 14 is an example energy profile illustrating energy states of an adatom absorbed onto a surface according to an example in the present disclosure;£00271 FIG. 15 is a schematic diagram illustrating the formation of a film nucleus according to an example in the present disclosure; and
[0028] FIG. 16 is a block diagram of an example computer device within a computing and communications environment that may be used for implementing devices and methods in accordance with representative examples of the present disclosure.
[0029] in the present disclosure, a reference numeral having at least one of: at least one numeric value (including without limitation, in at least one of: superscript, and subscript), and at least one alphabetic character (including without limitation, in lower-case) appended thereto, may be considered to refer to at least one of: a particular Instance, and subset thereof, of the feature (element) described by the reference numeral. Reference to thereference numeral without reference to the at least one of the appended value(s), and the character(s), may, as the context dictates, refer generally to the feature(s) described by at least one of: the reference numeral, and the set of ail instances described thereby.Similarly, a reference numeral may have ths letter “x* in the place of a numeric digit. Reference to such reference numeral may, as the context dictates, refer generally to feature(s) described by the reference numeral, where the character “x” is replaced by at least one of: a numeric digit, and the set of all instances described thereby,
[0030] In the present disclosure, for purposes of explanation and not limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including without limitation, particular architectures, interfaces and techniques. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, end applications are omitted to not obscure the description of the present disclosure with unnecessary detail
[0031] Further, it will be appreciated that block diagrams reproduced herein can represent conceptual views of illustrative components embodying the principles of the technology.
[0032] Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific details that are pertinent to understanding the examples of the present disclosure, to not obscure the disclosure with details that wifi be readily apparent to those of ordinary skill in the art having the benefit of the description herein.
[0033] Any drawings provided herein may not be drawn to scale and may not be considered to limit the prose nt disclosure in any way.
[0034] Any feature shown in dashed outline may In some examples be considered as optionalSUMMARY
[0035] According io a broad aspect, there is disclosed a layered semiconductor device comprising a compound, the compound comprising: a plurality ofcyclophasphazene moieties, -each cyclophasphazene moiety being bonded- to at feast one other cycl ©phosphazene moiety by at feast one linker moiety; and a plurality ofcyclophasphazene moiety functional groups bonded to the plurality of cyclophasphazene moieties, at leasf one of the cyclophasphazene moiety functional groups comprising a fluorine (F}-containing moiety.
[0036] In some non limiting examples, the plurality of cyclophasphazene moieties may comprise a first cyclophasphazene moiety, ahd a second cyclophasphazene moiety; wherein a first linker moiety may bond the firstcyclophasphazene moiety to toe second cyd op h osp h azene m defy .
[0037] In some non -limiting examples, the device may further comprise a third cyclophasphazene moiety bonded to at least one of. the firstcyclophasphazene moiety, and the second cyclophasphazene moiety, by at least one of. the first linker moiety, and at least one additional linker moiety.
[0038] In some non -limiting examples, the third cyclop has ph azene moiety may be bonded to one of: the first cyclophasphazene moiety, and the second cyclophosphazene moiety, by a second linker moiety.
[0039] In some non -limiting examples, the third cyclophasphazene moiety may be bonded to: the first cyclophasphazene moiety, and the second cyclophosphazene moiety, by the first linker moiety.
[0040] In some non-limiting examples, a total number of sp2carbon (C) atoms in the compound may be one of no more than about: 30, 24, 18. 15, 12, 10, and 6,[uu41]m some non-limiting examples, a total number of sp2C atoms in any of the plurality ofcyclophasphazene moiety functional groups may be no more than a number of sp2C atoms in the at least one linker moiety.
[0042] In some non-limiting examples, a total number of sp2C atoms in the compound may be between about 1 -6; and a quotient of: a total number of fluorinated C atoms in the compound / the total number of sp2C atoms in the compound, may be one of at feast about: 7, 8, 10, 12, 13, 14, 15, 16, 17, 13, and 20.
[0043] In some non -limiting examples, a total number of sp2C atoms to the compound may be at least 7; and a quotient of: a total number of fluorinated C atoms in the compound / thetotal number of sp2C atoms in the compound, may be one of at feast about 1 , 2, 4, 6, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20,
[0044] some non -limiting examples, a quotient of: a total number of F atoms in the com pound / a total number of C atoms in the compound, may be one of at least about;1.51, 1.52, 1.54, 1.56, 1.56, 1.60, 1.81 , 1.62; 1.63, 1 .87 1.85, 1.66; 1.67, 1.88, 1.69, 1.70, 1.72, 1.75, 1.77, and 1.81.
[0045] In some non-limiting examples, a quotient of: a total number of F atoms in the plurality of cyclophosphazene moiety functional groups / a total number of C atoms in the plurality of cyclophosphazene moiety functional groups, may be one of at feast about: 1.55, 1.58, 1.62, 1.65, 1 68, 1.70, 1 73, 1.77, and 1 81 ;
[0046] In some non -limiting examples, a molecular structure of the compound may be represented by Chemical Formula (LPH-1 ): where:represents ths linker moiety, comprising at least one of: a single bond. C, CH. an ether, a substituted amine, anun substituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fiuoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarytene, an unsubstituted fluoroarylene, a substituted hetero arylene, an unsubstituted hetero arylene, a substituted cycloalkylene, an un substituted cycloalkylene, a substituted heteroalkylene. an un substituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an un substituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety;R represents the cyclophosphazene moiety functional group, each R independently comprising at least one of: F, chlorine (Cl), a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cydoalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heterocycloalkyl group, an un substituted heterocycloalkyl group, a substituted fluoroheterocycloalkyi group, an unsubstituted fluoro heterocycloalkyl group, a substituted alkoxy group, an un substituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fiuoroalkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl oxy group, an un substituted fluoroaryloxy group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted fluoro heteroaryloxy group, a unsubstituted fluoroheteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fiuoroaryl group, a substitated alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alky lamina group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfanyl group, a sulfide group, a sulfonyl group, a thiol group,, an alkylthio group, a fiulromethylthto group, a carbonyl group, a siloxane group, a silane group, and an arganosilicon group; m and n are each integers between 2-4; and each is Independently at least one of: hydrogen (H). deutero (D), F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fkteroalkyl group, a cydoalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.[DOATJln some non- limiting examples, each linker momty may have a molar mass of one of at least about: 12, 13, 15, 16, 20, 25, 30, 40, 50, 70, 100, 120, 130, arid 150, g / mol
[0048] In some non-limiting examples, a percentage of the molar mass of the compound that is attributable to th a at least one linker moiety may be one of at least about: 0.2, 0.3. 0.5, 0.7, 1.1, 1.5, 1.7, 1.8, 2.0, 2.3, 2.5, 2.7, 2.9, 3.1 , 3.3, 3.5. 3.7, 4.0, and 4.5%.
[0049] In some non -limiting examples, a percentage of the molar mass of the compound that is attributable to the at least ohe Srikdr moiety may be one of no more than about: 5.5.5.8, 6.0, 6.8, 7.0, 8.5, 8.7, 9.0, 9.2, 9.5, 9.7, 10.0, and 12.0%.
[0050] In some non-hmUsng examples, the at least one linker moiety may comprise at least one cyclic moiety.
[0051] In some non -limiting examples, the at least one cyclic moiety may be one of: directly, and indirectly, connected to at least one of the plurality of cyclophasphazene moieties.
[0052] In some non -limiting examples, the at least one linker moiety may be represented by one of: Chemical Formulae (LK-1 ) to (LK-4):where: each independently represents a cyclic moiety; each ndependently represents a spacer moiety;each / ,# independently represents a bridging moiety j and each * independently represents a point of attachment to one of the plurality of cyd op hosph azene m defies
[0053] In some non -limiting examples, the spacer moiety may comprise at teast one of: a single bond, oxygen (O), sulfur (S), nitrugen (^), C, an ether, a thioethes', a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted tiuoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an un substituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene
[0054] hi come non-hmiting example a, the at least one linker moiety may be represented by one of Chemical Formulae (LK-5) and (IK-6): where:eachndependently represents a cyclic moiety; represents a bridging moiety; and each * independently represents a point of attachment to one of the plurality of cydophospharana moiettes.
[0055] In some non -limiting examples, the cyclic moiety may Independently comprise at teast one of: a substituted arylene, an unsubstituted arylene, a substituted fluoroarytene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene.
[0056] In some non-limiting examples, at least one ring atom of the cyclic moiety may mdependsritiy attach to at least one substituent group -comprising at least one of: H, D, F, Cl, an alkyl group, a tluoroalkyl group, a fluoromethyl group, a di fluoromethyl group, atrifluoromethyl group, a #uoroethyl group, a polyfluoroethyl group, a cycfoalkyi group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluorometh oxy group, a trifluoromethoxy group, an aryl group, a heteroaryl group, a fluoroaryl group,, a polyfluoroaryl group, a 4 -fluoro phenyl group, a 3,4,5- trifluorophenyl group, a 4- (trifluoromethoxy)phenvl group, a sulfanyl group, a fluoroalkylsulfanyl group, and a trifluoromethylsulfanyl group.
[0057] In some non-limiting examples, the cyclic moiety may comprise an aromatic moiety
[0058] In some non -limiting examples, the at least one linker moiety may be represented by one of: Chemical Formulae (LK-7) and (LK-8):where: each independently represents an aromatic moiety; each independently represents a bridging moiety, and each independently represents a point of attachment to one of the plurality of cyd op hosph azene moseties
[0059] In some non-limiting examples, the aromatic moiety may independently be one of: a monocyclic aromatic moiety, and a polycyclic aromatic moiety.
[0060] hi some non -limiting examples, the aromatic moiety may independently comprise at least one of a: 6-20, 6-15, end 6-9 , membered aromatic moiety10061] ! n some non-limiting examples, the at least one linker moiety may be represented by one of: Chemical Formulae (LK-9), (LK-10), and (LK-11):where: each independently represents a bridging moiety, each independently represents a point of attachment to one of the plurality of cyclophasphazene moieties: each lndependently represents at least one of: H, u, F, Cl, bromine (Br), an alkyl group, a cycloalkyl group, an alkoxy group, a fluoroalkyl group, a group, a heteroaryi group, a haloalkoxy group, a fluoroaryl group, a fluoroalkoxy group, a fluoroalkylsulfanyl group, a fluorom ethyl group, a drfl uorom ethyl group, a trifluoromethyi group, a difluoromethoxy group, a tnfluoromethoxy group, a fluoroethyl group, a polyfluoroethyl group, a 4-fluorophenyl group, a 3,4,5- trifluorophenyl group, a polyfluoroaryl group, a 4-(trifluoromethoy phenyI group, a carbonyl group, a nitro group, a nitrile group, a phosphine oxide group, a diphenyl phosphine oxide group, and a trifluoromethylsulfanyl group arid is an integer between 0-4,
[0062] in some non-limiting examples, the bridging moiety may comprise at least one of: a single bond, C, CH, CH2, CH3,CHF, CF3, CR, CF2N, NH, S, O, CO, SO2,an ether, a thioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene. a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocydoalkylene, and an substituted heterocydoalkylene: and each may independently be at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryi group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0063] In some non-limiting examples, each of the plurality of cydophosphazene moiety functional groups may Independently comprise at least one of: F, CI , hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyf group, an unsubstituted fluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroarvloxy group, an unsubstituted fluoroarvloxy group, an amino group, an amine group, an alkylamine group, and an arylamine group.
[0064] In some non-limiting examples, each of the plurality of cydophosphazene moiety functional groups may independently comprise at least one of: F, CL a hydroxyl group, a C1-C12alkyl group, a C1-C12fluoroalkyl group, a C1-C12alkoxy group, a C1-C12fiuoroalkoxy group, a C3-C18aryl group, a C3-C18fluoroaryl group, a C3-C18aryloxy group, a C3-C18fluoroaryloxy group, an amino group, a C1-C12alkylamine group, and a C3-C18arylamine group.
[0065] In some non -limiting examples, each of the plurality of cyd op hosph azene moiety functional groups may independently comprise at least one of: a alkoxy group, a Ce-aryloxy group, and afluoroaryloxy group.
[0066] In some non-limiting examples, each of the plurality of cyclophosphazene moiety functional groups may independently be represented by Chemical Formula (E-1): where:* represents a point of attachment to one of the plurality of cyclophasph azene m duties, represents a linker group, comprising at least one of: a single bond, O, N, C, CH,represents an intermediate group, comprising at least one of: O, an ether, a substituted alkylene, an un substituted alkylene, a substituted fluoroalkylene, an unsubsfltuted fluoroalkylene, a substituted cycloalkylene, an unsubstiluted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an un substituted heteroarylene;represents a terminal group, comprising at least one of: H, D, Fandandeach s independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryI group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an aikynyl group.
[0067] In some non-limiting examples, a majority of the plurality ofcyclophasphazene moiety functional groups may comprise the F-containing moiety.
[0068] hi same non -limiting examples, substantially all of the plurality of cyclophosphazene moiety functional groups may comprise the F-containing moiety.
[0069] In some non -limiting examples, the F-con taming moiety may comprise at least one of: a substituted fluoroalkyl, an unsubstituted fluoroalkyl, a substituted fluoroalkoxy, an unsubstituted fluoroalkoxy, a substituted fluoroalkylsiloxy, an unsubstituted fluoroalkylsiloxy, a substituted fluorocyctoalkyl, an unsubstituted fluorocyctoalkyl, a substituted fluoroaryl, and an unsubstituted fluoroaryl
[0070] In some non-limiting examples, the F-containing moiety may comprise a fluoroalkyl moiety represented by Chemical Formula (FL-1 ):where:
[0071] In some non -limiting examples, the F-containing moiety may comprise no more than 15 C atoms.
[0072] In some non -limiting examples, a majority of the plurality of cyclophosphazene mafeiy functional groups may have an identical chemical structure.
[0073] 1n some non dim hi ng examples, substentially all of the plurality ofcyclophasphazene moiety functional groups may have an identical chemical structure.
[0074] In some non-limiting examples, at least one of the plurality ofcyclophasphazene moiety functional groups may have a molar mass of one of at least about 50, 80, 100, 200, 300, 400, 430, 480, 530, and 580, g / mol.
[0075] In some non-limiting examples, at least one of the plurality ofcyclophasphazene moiety functional groups may have a molar mass of one of no more than about. 550, 600, 650, 700, 750, 800, 850, 900, 950, 1 ,060, and 1 ,200, g / mol.
[0076] In some non-limiting examples, a molecular structure of the compound may be represented by Chemical Formula (LPH-2): where:epresents the linker moiety, comprising at least one of. a single bond, C, CH, CH2,CHF, CF2, N, NH, S, O, an ether, a substituted amine, anunsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted C5-C30arylene, an unsubstituted C5-C30arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted C4-C30heteroarylene, an unsubstituted C4-C30heteroarylene, a substituted C3- C30cycloalkylene, an unsubstituted C3-C30cydoalkylene, a substituted heteroafkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocydoalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety;R represents the cyclophosphazene moiety functional group, each R independently comprises at least one of: F, Cl, a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group* an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group* a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoraaryloxy group, an unsubstituted fluoroaryloxy group, an ammo group, an amme group, an alkylamine group, and an arylamine group; and each R1is independently at least one of: H. D, F. a substituted akyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkylgroup, a cydoalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0077] In some non-limiting examples, a molecular structure of the compound may be represented by one of: Cherhical formulae (LPH-3) and (LPH-4):where:^represents a cyclic moiety, eachindependently comprising at least one of. a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted ^oroarytene, a substituted heteroarytene, an unsubstituted heteroerylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloakylene;LBrepresents a bridging moiety, comprising at least one of: a single bond, C, CH, CH2, CH3, CR2,, CHF, CF2, CF3, CF2N, NH, S, O, CO, SO2, an ether, athioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, anunsubstituted heteroalkyiene, a substituted heterocydoalkylene, and an unsubstituted heterocydoalkylene;R represents a cyclophosphazene moiety functional group, each R independently comprising at least one of; F, Cl, a hydroxyl group, a C1-C12alkyl group, a C1-C12fluoroalkyl group, a C1-C12alkoxy group, a C1-C12fluoroalkoxy group, a C3-C18aryl group* a C3-C18fluoroaryl group, a C3-C18aryloxy group, a C3-C18fluoroaryloxy group, an amino group* a C1-C12alkylamine group, and a C6-C18arylamine group; and
[0078] each s independently at least one of H, D, F, an alkyl group* a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryi group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0078] In some non-limiting examples, a molecular structure of the compound may be represented by one of: Chemical Formulae (LPH-5) and (LPH-6):where: each independently represents an aromatic moiety;LBrepresents a bridging moiety, comprising at least one of: a single bond, C, CH, CH2C H3, CR2. C CHF. CF2CF3. CF2N NH. S. O. CO. SO2, an ether, a thioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene,an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fiuoroatkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloakylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene: each independently comprises at least one of: C, F, a CF2moiety, a CF2H moiety, a CF3moiety, a SCF3moiety, a SF3moiety, a SFs moiety, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a branched fluoroalkyl group comprising 2-15 C atoms, and an unbranched fluoroalkyl group comprising 2-15 C atoms; and each independently at least one of H, D, F, an alkyl group, a fluoroalkyl group, a cydoalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an aikynyl group.
[0079] In some non-limiting examples, the aromatic moiety may be substituted by at least one of: H, D, F, Cl, an alkyl group, an alkenyl group, an aikynyl group, a fluoroalkyl group, a fluoromeihyl group, a difluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a polyfluoroethyl group, a cydoakyl group, a fluorocycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluoromethoxy group, a trifluoromethoxy group, an aryl group, a heteroaryl group, a fluoroaryl group, a polyfluoroaryl group, a 4- fluoroohenyl group, a 3.4,5-trifluorophenvl group, a 4-(trifluoromethoxv)phenvf group, a sulfonyl group, a fluoroalkylsulfanyl group, a trifluoromethylsulfanyl group, a silyloxy group, a sulfide group, a carbonyl group, a nitro group, a cyano group, a phosphine oxide group, and a diphenyl phosphine oxide group.
[0080] In some non-limiting examples, a molecular structure of the compound may be represented by Chemical Formula (LPH-7):where: each Ph independently represents a phenyl moiety;LBrepresents a bridging moiety, comprising at least one of: a single bond, C, CH, CH2, CH3, CHF, CF2, CR, CF2N, NH, S, O, CO, SO2, an ether, athioether, a disulfide. a substituted amine. an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocydoalkylene, and an unsubstituted heterocycloalkylene; each Rr independently comprises at least one of: C, F, a CF2moiety, a CF2H moiety, a CF3moiety, a branched fluoroalkyl group comprising 2 to 15 C atoms, and an unbranched fluoroalkyl group comprising 2 to 15 C atoms; and each Rsis independently at least one of: H, D, F. an alkyl group, a fluoroalkyl group, a cydoalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haioaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0081] In some non-limiting examples, the phenyl moiety may be substituted by at least one of: F, Cl, a C1-C7alkyl group, a C1-C7fluoroalkyl group, a fluoromethyf group, a difluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a polyfluoroethyl group, a C1-C7fluoroalkoxy group, a tnfluoromethoxy group, a cycloalkyl group, a fluorocycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluoromethoxy group, a trifluoromethoxy group, a sulfonyl group, a fluoroalkylsulfanyl group, a trifluoromethylsulfanyl group, a silyloxy group, a sulfide group, a carbonyl group, a nitro group, a cyano group, and a phosphine oxide group.
[0082] In some non-limiting examples, aa molecular structure of the compound may be represented by Chemical Formula (LPH-8):where: each Ph is independently a phenyl moiety; represents a bridging moiety, comprising at least one of: a single bond, C, CHa, CF3, C(CH3)2, C(CF3)2, C(Ph)CH3, C(Ph)2, S, O, a carbonyl, a sulfone, an ether, a thioether, a disulfide, a substituted cyclohexylene, an unsubstituted cydohexylene, an arylene comprising 6 to 12 carbon (C) atoms, and a heteroarylene composing at least 4 C atoms; xis an integer between 1-5; y is an integer between 1-20; and Zis one of; F, and H.
[0083] In some non-limiting examples, the phenyl moiety may be substituted by at least one of: F, a C1-C6alkyl group, and a C1-C6alkoxy group
[0084] in some non -limiting examples, a molar mass of the compound may be one of at least about: 3,000, 3,700, 4,000, 4,200, and 4,500, g / mol .
[0085] In some non-limiting examples, a molar mass of the compound may be one of no more than about: 6,000, 5,700, 5,500, 5,300, and 5,000, g / moL
[0086] In some non-limiting examples, a percentage of a molar mass of the compound that may be attributable to the plurality of cyclophosphazene moiety functional groups may be one of at least about: 30, 40, 50, 60, and 70%.
[0087] In some non-limiting examples, a percentage of a molar mass of the compound that may be attributable to the plurality of cyclophosphazene moiety functional groups may be one of no more than about: BO, 85, and 90%.
[0088] In some non-limiting examples, a percentage of a molar mass of the compound that rhay be attributable to the presence of F atoms is one of between about: 40-90, 30- 80, 55-75, and 60-70%.
[0089] In some non-limiting examples, the compound may exhibit substantially no absorption of light at a wavelength of between about 350-1 ,400 nm.
[0090] In some non-limiting examples, the compound may have an optical gap of one of at least about: 34, 3.5, 41, 5,0, and 8.2. eV.
[0091] In some non-limiting examples, the compound may exhibit substantially no photoluminescence In a wavelength range ot between about: 380-700 nm.
[0092] In some non-limiting examples, the compound may be a solid at room temperature and pressure.
[0093] In some non-limiting examples, a melting point of the compound may be no more than a sublimation temperature thereof.
[0094] In some non-limiting examples, a melting point of the compound may be one of at least abdut: 70, 80, 85, 90, 100, 110. and 126°C.
[0095] In some non-limiting examples, a sublimation temperature of the compound may be one of no more than about: 350, 330, 300, 280, 250, 230, and 210"C.
[0096] In some non-limiting examples, a sublimation temperature of the compound may be one of at least about: 110, 130, 150, 160, 170, 180, and 200 C.
[0097] In some non -limiting examples, a melting point of the compound may be one of at least about: 70, 80, 85, 90, 100, 110, and 120°C, and the sublimation temperature of the compound may be between about 110-300*0.
[0098] In some non-limiting examples, the device may comprise a patterning coating comprising the compound, the patterning coating being disposed on a first layer surface of an underlying layer in a first portion of a lateral aspect thereof, and a deposited layer comprising a deposited material, disposed on a second layer surface; wherein the first portion may be substantially devoid of a closed coating of the deposited material.
[0099] In some non-limiting examples, the patterning coating may be adapted to reduce an initial sticking probability for vapor flux of a conductive deposited material.
[0100] In some non-limiting examples, the device may comprise an emissive region comprising a substrate; a first electrode and a second electrode; and at least one semiconducting layer disposed between the first and second electrodes; wherein the first electrode may be disposed between the substrate and the at least one semiconducting layer.
[0101] In some non-limiting examples, the first portion may exclude a lateral aspect of the emissive region.
[0102] In some non-limiting examples, the second electrode may comprise at least a part of the deposited layer as a layer thereof.
[0103] In some non-limiting examples, the first portion may include a lateral aspect of the emissive region.
[0104] In some non-limiting examples, the device may comprise an auxiliary electrode comprising the deposited layer as a layer thereof.
[0105] According to a broad aspect, there is disclosed a compound comprising: a plurality of cyclophosphazene moieties, each cyclophosphazene moiety being bonded to at least one other cyclophosphazene moiety by at least one linker moiety, and a plurality of cyciophosphazene moiety functional groups bonded to the plurality of cyclophosphazene moieties, wherein at least one of the cyciophosphazene moiety functional groups comprises a F-containing moiety.
[0166] In some non-limiting examples, me plurality of cyciophosphazene moieties may comprise a first cyciophosphazene moiety, and a second cyciophosphazene moiety; a first linker moiety bonds the first cyciophosphazene moiety to the second cyciophosphazene moiety.
[0107] In some non-limiting examples, the compound may comprise a third cyciophosphazene moiety bonded to at least one of: the first cyciophosphazene moiety, and the second cyciophosphazene moiety, by at least one of. the first linker moiety, and at least one additional linker moiety.
[0108] In some non-limiting examples, the third cyclophosphazene moiety may be bonded to one of: the first cyclophosphazene moiety, and the second cydophosphazene moiety, by a second linker moiety.
[0109] in some non-limiting examples, the third cydophosphazene moiety may be bonded to: the first cyddphtispha^ moiety, and the second dyddptiospha^gne moiety, by the first linker moiety.
[0110] In some non-limiting examples, a total number of sp2C atoms in the compound may be one of no more than about 30, 24, 18, 15, 12, 10, and 6.
[0111] in some non-limiting examples, a total number of sp2C atoms in any of the plurality of cyclophosphazene moiety functional groups may be no more than a number of sp2C atoms in the at least one linker moiety.
[0112] In some non-limiting examples, a total number of spzC atoms in the compound may be between about 1 to 6; and a quotient of: a total number of fluorinated C atoms in the compound / the total number of sp2C atoms in the compound, may be one of at least about: 7, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20.
[0113] in some non-limiting examples, a total number of sp2C atoms in the compound is at least 7; and a quotient of: a total number of fluorinated C atoms in the compound / the total number of sp2C atoms in the compound, may be one of at least about: 1, 2, 4, 6, 8, 10, 12, 13, 14, 15, 16, 17, 18. and 20.
[0114] in some non-limiting examples, a quotient of: a total number of F atoms in the compound / a total number of C atoms in the compound, may be one of at least about: 1.51, 1.52, 1.54, 1.56, 1.58, 1 60, 1.61, 1.62, 1.63, 1.64, 1.65, 1.66, 1 67, 1.68, 1.69, 1.70, 1.72, 1.75, 1.77, and 1.81.
[0115] In some non-limiting examples, a quotient of: a total number of F atoms in the plurality of cyclophosphazene moiety functional groups / a total number of C atoms In the plurality of cydophosphazene moiety functional groups, may be one of at least about: 1.55, 1.58, 1.62, 1.65, 1.68, 1.70, 1.73, 1.77, and 1.81.
[0116] In some non-limiting examples, a molecular structure of the compound may be represented by Chemical Formula (LPH-1): where:presents the linker moiety, comprising at least one of. a single bond, C, CH, CH2,CHF, CF2, N, NH S, O, an ether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene. an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroaryiene, a substituted cydoalkylene, an unsubstituted cydoalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondord moiety, and an unsubstituted diamondoid moiety; / ? represents the cyclophosphazene moiety functional group, each ndependentlycomprising at least one of: F, chlorine (Cl), a hydroxyl group, s substituted alky! groep, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocydoalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heteracydoalkyl group, an unsubstituted heterocydoalkyl group, a substituted fkioroheterocydoalkyi group, an unsubstituted fluoroheterocydoalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted fluoroheteroaryloxygroup, a unsubstituted fluoroheteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryf group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsdoxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkytthio group, a trifluorornethylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilcon group; m and n are each integers between 2-4; and each R1is independently at least one of' H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group. DESCRIPTIONLayered Device
[0117] The present disclosure relates generally to layered semiconductor devices 100, and more specifically, to opto-electronic devices 200. An opto-electronic device 200 may generally encompass any device 100 that converts electrical signals into EM radiation in the form of photons and vice versa. In some non-limiting examples, an opto-electronic device 206 may comprise an organic light-emitting diode (OLEB).
[0118] Those having ordinary skill in the relevant art will appreciate that, while the present disclosure is directed to opto-electronic devices 200, the principles thereof may, in some non-limiting examples, be applicable to any panel having a plurality of layers, including without limitation, at least one layer of conductive deposited material 531, including as a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, including without limitation, one of partially, and entirely, ata non- zero angle relative to a plane of at least one of the layers.
[0119] turning now to FIG. 1 , there may be shown a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, as shown ingreater detail in FIG. 2, the device 100 may comprise a plurality of layers deposited upon a substrate 10.
[0120] A first lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantiatiy transverse lb both the X-axis and the Z-axis. At least one of the lateral axes may define a lateral aspect of the device 100. The longitudinal axis may define a longitudinal aspect of the device 100.
[0121] The layers of the device 100 may extend, in the lateral aspect, substantially parallel to a plane defined by the lateral axes. Those having ordinary skill in the relevant art will appreciate that the substantially planar representation shown in FIG. 1 may be, in some non-limiting examples, an abstraction for purposes of illustration. In some non- limiting examples, there may be, across a lateral extent of the device 100, localized substantially planar strata of different thicknesses and dimension, including, in some non- limiting examples, the substantially complete absence of at least one layer separated by non-planar transition areas (including lateral gaps and even discontinuities).
[0122] Thus, while for illustrative purposes, the device 100 may be shown in its longitudinal aspect as a substantially stratified structure of substantially parallel planar layers, such device 100 may illustrate locally, a diverse topography to define features, each of which may substantially exhibit the stratified profile discussed in the longitudinal aspect
[0123] In some non-limiting examples, a lateral aspect of an exposed layer surface 11 of the device 100 may comprise a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may comprise that part of the exposed layer surface 11 of the device 100 that lies beyond the first portion 101.
[0124] As shown in FIG. 1 , the layers of the device 100 may comprise a substrate 10, and a patterning coating 110 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof. In some non-limiting examples, the patterning coating 110 may be limited in its lateral extent to the first portion 101 and a deposited layer 130 may be disposed as a closed coating 140 on an exposed layer surface 11 of the device 100 in a second portion 102 of its lateral aspect.
[0125] In some non-limiting examples, at least one particle structure 150 may be disposed as a discontinuous layer 160 on the exposed layer surface 11 of the patterning coating 110. In some non-limiting examples, although not shown, at least one of: the patterning coating 110, the deposited layer 130, and at least one particle structure 150, may be deposited on a layer (underlying layer 710) other than the substrate 10 including without limitation, an intervening layer between the substrate 10 and at least one of: the patterning coating 110, deposited layer 130, and the at least one particle structure 150. In some non-limiting examples, the underlying layer 710 may comprise at least one of: an orientation layer, and an organic supporting layer.
[0126] In some non-limiting examples, at least one of: the patterning coating 110, the deposited layer 130, and the at least one particle structure 150, may be covered by al least one overlying layer 170.
[0127] in some non-limiting examples, such overlying layer 170 may comprise at least one of: an encapsulation layer and an optical coating. In some non-limiting examples, the encapsulation layer may comprise at least one of: a glass cap, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer, provided to encapsulate the device 100. In some non-limiting examples, the optical coating may comprise: at least one of: an optical, and structural, coating, and at least one component thereof, including without limitation, a polarizer, a color filter, an anti-reffection coating, an anti-glare coating, cover glass, and an optically dear adhesive (OCA).
[96126] tn some non-limiting examples, at least one of: a substantially thin patterning coating 110 in the first portion 101, and a deposited layer 130 in the second portion 102, may provide a substantially planar surface on which the overlying layer 170 may be deposited. In some non-limiting examples, providing such a substantial planar surface for application of such overlying layer 170 may increase adhesion thereof to such surface.
[0129] b some non-limiting examples, the optical coating may be used to modulate optical properties of light being at least one of: transmitted, emitted, and absorbed, by the device 100, Including without limitation, plasmon modes. In some non-limiting examples, the optical coating may be used as at least one of: an optical filter, Index-matching coating, optical outcoupling coating, scattering layer, diffraction grating, and parts thereof
[0130] In some non-limiting examples, the optical coating may be used to modulate at least one optical microcavity effect in the device 100 by, without limitation, tuning at least one of: the total optical path length, and the refractive index thereof. At least one optical property of the device 100 may be affected by modulating at least one optical microcavity effect including without limitation* the output light Including without limitation, at feast one of: an angular dependence of an intensity thereof, and a wavelength shift thereof. In some non-limiting examples, the optical coating may be a non-electrical component, that is. the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.
[0131] In some non-limiting examples, the optical coating may be formed of any deposited material 531, and m some non-limiting examples, may employ any mechanism of depositing a deposited layer 130 as described herein.Patterning
[0132] In some non-limiting examples, with reference to FIG. 1, in some non-limiting examples, a patterning coating 110, comprising a patterning material 411, which in some non-limiting examples, may be an NIC (nucleation inhibiting coating) material, may be disposed, in some non-limiting examples, as a closed coating 140, on an exposed layer surface 11 of an underlying layer 710, including without limitation, a substrate 10, of the device 100, in some non-limiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 415 such as, without limitation, a fine metal mask (FMM), including without limitation, to the first portion 101.
[0133] Thus, in some non-limiting examples, in the second portion 102 of the device 100, the exposed layer surface 11 of the underlying layer 710 of the device 100, may be substantially devoid of a closed coating 140 of the patterning coating 110.Patterning Coating
[0134] The patterning coating 110 may comprise a patterning materiai 411. In some non-limiting examples, the patterning material 411 may comprise an NIC material. In some non-Hmiting examples, the patterning coating 110 may comprise a closed coating 140 of the patterning material 411.
[0135] The patterning coating 110 may provide an exposed layer surface 11 with a substantially low propensity (including without limitation, a substantially low initial sticking probability) (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker at al) against the deposition of a deposited material 531 to be deposited thereon upon exposing such surface to a vapor flux 532 of the deposited material 531, which, in some non-limiting examples, may be substantially less than the propensity against the deposition of the deposited material 531 to be deposited on the exposed layer surface 11 of the underlying layer 710 of the device 100, upon which the patterning coating 110 has been deposited.
[0136] Because of the attributes, including without limitation, a low initial sticking probability, of at least one of: at ieast one of: the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, against the deposition of the deposited materia! 531, the exposed layer surface 11 of the first portion 101 comprising the patterning coating 110 may be substantiafly devoid of a closed coating 140 of the deposited material 531.
[0137] In some non-limiting examples, exposure of the device 100 to a vapor flux 532 of the deposited material 531 may, in some non-limiting examples, result in the formation of a dosed coating 140 of a deposited layer 130 of the deposited material 531 in the second portion 102, where the exposed layer surface 11 of the underlying layer 710 may be substantially devoid of a closed costing 140 of the patterning coating 110.
[0138] In some non-limiting examples, the patterning coating 110 may be an NIC that provides high deposition (patterning) contrast against subsequent deposition of the deposited material 531, such that the deposited material 531 tends not to be deposited, in some non-limiting examples, as a dosed coating 140, where the patterning coating 110 has been deposited.
[0139] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 110 for causing formation of a discontinuous layer 160 of at least one particle structure 150, upon the patterning coating 110 in the first portion 101 beingsubjected to a vapor flux 532 of a deposited material 531. In at least some applications, the attributes of the patterning coating 110 may be such that a dosed coating 140 of the deposited material 531 may be formed in the second portion 102, which may be substantially devoid of the patterning coating 110, while only a discontinuous layer 160 of at least one partide structure 150 having at least one characteristic mav be formed in the first portion 101 on the patterning coating 110.
[0140] For purposes of simplicity of discussion, in the present disclosure, to the extent that a patterning coating 110 is deposited to act as a base for the deposition of at least one particle structure 150 thereon, such patterning coating 110 may be designated as a partide structure patterning coating 110p. By contrast, to the extent that a patterning coating 110 is deposited in a first portion 101 to substantially preclude formation in such first portion 101 of a closed coating 140 of the deposited layer 130, thus restricting the deposition of a dosed coating 140 of the deposited layer 130 to a second portion 102, such patterning coating 110 may be designated as a non-partide structure patterning coating 110n. Those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, a patterning coating 110 may act as both a particle structure patterning coating 110p and a non-particie structure patterning coating 110«.
[0141] In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 160 of at least one particle structure 150 of a deposited material 531, which may be. In some non-limiting examples, of one of. a metal, and a metal alloy, inducting withoutlimitation, at least one of: ytterbium (Yb), silver (Ag), magnesium (Mg), and a Ag-containing material, including without limitation, MgAg, in the second portion 102, while depositing a closed coating 140 of the deposited material 531 having a thickness of, without limitation, one of no more than about: 100, 50, 25, and 15, nm. In some non- limiting examples, an amount of the deposited material 531 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of between about: 1-50, 2-25, 5-20, and 7-10% of the amount of the deposited material 531 deposited as a closed coating 140 in the second portion 102, which, by way of non- may correspond to athickness of one nf nn mor^ than about: 100, 75, 50, 25, and 15, nm.
[0142] In some non-limiting examples, the patterning coating 110 may be disposed in a pattern that may be defined by at least one region therein that may be substantially devoid of a dosed coating 140 of the patterning coating 110.
[0143] In some non -limiting examples, the at least one region may separate the patterning coating: 110 into a plurality of discrete fragments thereof. In some non-limiting examples, the plurality of discrete fragments of the patterning coating 110 may be physically spaced apart from one another in the lateral aspect thereof. In some non-fimiting examples, the plurality of the discrete fragments of the patterning coating 110 may be arranged in a regular structure, including without limitation, an array (matrix), such that in some non-limiting examples, the discrete fragments of the patterning coating 110 may be configured in a repeating pattern.
[0144] In some non-limiting examples, at least one of the discrete fragments of the patterning coating 110 may each correspond to an emissive region 210. In some non- limiting examples, an aperture ratio of the emissive regions 210 may be one of no more than about 50, 40, 30, and 20%.
[0145] In some non-limiting examples, the patterning coating 110 may be formed as a single monolithic coatingAttributes of Patterning Coating / Material
[0146] In some non •'limiting examples, the layered semiconductor device 100 may comprise a linked cyclophosphazene compound comprising: a plurality of cydophosphazene moieties, each cyclophosphazene moiety being bonded to at least one other cydophosphazene moiety by at least one linker moiety; and a plurality of cyclophosphazene moiety functional groups banded to the plurality of cyclophosphazene moieties, at least one of the cydophosphazene moiety functional groups comprising a fluorine (F)-containing moiety, in some non-limiting examples, the plurality of cydophosphazene moieties may comprise a first cydophosphazene moiety and a second cydophosphazene moiety; wherein a first linker moiety bonds the first cydophosphazene moiety to the second cydophosphazene moiety, in some non-limiting examples, chemical structures of the plurality of cydophosphazene moieties may be one of: identical, anddifferent, to one another. In some non-limiting examples, at least one of the patterning coating 110, and the patterning material 411, may comprise such a linked cydophosphazene compound.
[0147] In some non -limiting examples, a phosphorus (P) atom of at least one of the plurality of cydophosphazene moieties may be bonded to the linker moiety^
[0148] In some non-limiting examples, a P atom of at least one of the plurality of cyclophosphazene moieties may be substituted, including without limitation, by at least one cydophosphazene moiety functional group In some non-limiting examples, at least one of the plurality of cydophosphazene moiety functional groups may be a low surface tension moiety.
[0149] In some non-limiting examples, lhe linked cyclophosphazene compound may comprise at least three cyclophosphazene moieties. In some non-limiting examples, the linked cydophosphazene compound may comprise a first cydophosphazene moiety, a second cyclophosphazene moiety, and a third cyclophosphazene moiety.
[0150] In some non-limiting examples, lhe third cyclophosphazene moiety may bond to at least one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by at least one of: the first linker moiety, and at least one additional linker moiety.In some non-limiting examples, the third cyclophosphazene moiety may bond to one oft the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by a second linker moiety that may be one of structurally: identical, and different, to the first linker moiety. In some non-limiting examples, the third cyclophosphazene moiety may bond to one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by the first linker moiety.
[0151] In some non-limiting examples, a molecular structure of the linked cyclophosphazene compound may be represented by any one of Chemical Formulae (LP- 1HLP-17):Where: independently represents the linker moiety; and independently represents the cydophosphazene moiety functional group.
[0152] In some non-limiting examples, a totai number of sp2carbon (C) atoms in the linked cydophosphazene compound may be one of no more than about 30. 24. 18. 15. 12. 10, and 6. In some non-limiting examples, a total number of sp2C atoms in any of the plurality of cydophosphazene moiety functional groups may be no more than a total number of sp2C atoms in the at least one linker moiety
[0153] In some non-limiting examples, a total number of sp2C atoms in the linked cydophosphazene compound may be at least about 1. In some non-limiting examples where a total number of sp2C atoms in the linked cydophosphazene compound is between about 1-6, a quotient of: a total number of fluorinated C atoms in the compound / the total number of sp2C atoms in the linked cydophosphazene compound, may be one of at least about: 7, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20. In some non-limiting examples where a total number of sp2C atoms in the linked cydophosphazene compound is at least about 7, a quotient of: a total number of fluorinated C atoms in the compound / the total number of sp2C atoms in the compound, may be one of at least about: 1, 2, 4, 6, 8, 10, 12, 13, 14. 15, 16, 17, 18, and 20.
[0154] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, a linked cydophosphazene compound having a certain quotient of: a total number of fluorinated C atoms in the compound / a total numberof sp2C atoms in the compound, may have applicability as a patterning material 411 in some scenarios.
[0155] In some non-limiting examples, a moiety comprising sp2C atoms may exhbit a substantially high surface tension, thereby facilitating nucleation and growth of the deposited material 531 on the surface, which mav have reduced applicability in certain applications. In some non-limiting examples, it may be postulated that the presence of sp2C atoms in the moiety, espedally in scenarios where such sp2C atoms are at least one of: positioned, oriented, and otherwise configured, such that they are substantially exposed to the vapor flux 532 of the deposited material 531 directed onto a surface of the patterning coating 110, and may act as nucleation sites onto which the deposited material 531 may condense.
[0156] Without wishing to be bound by any particular theory, it may be postulated that the presence of low surface tension moieties, including without limitation, moieties comprising at least one fluorinated C atom, e.g., a fluoroalkyl moiety, may reduce the likelihood of the nucleation and growth of the deposited material 531 occurring as the result of the presence of the high surface tension moiety comprising the sp2C atoms.
[0157] In some non-iimiting examples, in a linked cydophosphazene compound, the presence of cyclophosphazene moiety functional groups, composing low surface tension moieties, including without limitation, moieties comprising at least one fluorinated C atom, e g., a fluoroalkyl moiety, may substantially reduce, including without limitation, prevent, a likelihood of high surface tension moieties, which in some non-limiting examples may be provided as (a part of) the linker moiety from becoming exposed to the vapor flux 532 of the deposited material 531, thereby enhancing a pattemability, including without imitation, an ability to inhibit deposition of the deposited material 531 thereon, of the patterning coating 110 comprising such linked cydophosphazene compound.
[0158] In some non-iimiting examples, a quotient of: a total number of fluorinated C atoms in the compound / a total number of sp2C atoms in the compound, may be between about: 1-15, 2-12, and 3-9.
[0159] In some non-limiting examples, a quotient of: a total number of F atoms in the linked cydophosphazene compound / a total number of C atoms in the linked cydophosphazene compound, including without limitation, of the at least one patterningmaterial 411, may be one of at least about: 1 51, 1.52, 1.54, 1.56, 1 58, 1.60, 1.61. 1.62, 1.63, 1.64, 1.65, 1 66, 1.67, 1 68, 1.69, 1.70, 172, 1 75, 177, and 1.81.
[0160] In some non-limiting examples, a presence of low surface tension moieties in the compound may be correlated with a quotient of: a total number of F atoms in the linked cydophosphazene compound / a total number of C atoms in the linked cydophosphazene compound. In some non-limiting examples, linked cyclophosphazene compounds with a substantially high F / C quotient of, in some non-limiting examples, one of at least about: 1.51, 1.52, 1.54, 1.56, 1.58, 1.60, 1.61, 1.62, 1.63, 1.64, 1 65, 1.66, 1.67, 1.68, 1.69, 1.70, 1.72, 1.75, 177, and 1.81 , may have applicabiity as a patterning material 411 , in some scenarios.
[0161] In some non-limiting examples, a quotient of: a total number of F atoms in the plurality of cyclophosphazene moiety functional groups / a total number of C atoms tn the plurality of cyclophosphazene moiety functional groups, may be one of at least about: 1.56, 1.58, 1.62, 1.65, 1.68, 1.70, 1.73, 1.77, and 1.81.
[0162] In some non-limiting examples, a presence of low surface tension moieties in the cyclophosphazene moiety functional groups may be correlated with a quotient of: a total number of F atoms in the plurality of cyclophosphazene moiety functional groups / a total number of C atoms n the plurality of cyclophosphazene moiety functional groups. In some non-limiting examples, linked cyclophosphazene compounds with a substantially high F / C quotient of the plurality of cyclophosphazene moiety functional groups of, in some non- limiting examples, one of at least about: 1.55, 1.58, 1.62, 1.65, 1.68, 1.70, 173, 1.77, and 1.81, may have applicability as a patterning material 411 1n some scenarios.
[0163] In some non-iimiting examples, a molecular structure of the linked cyclophosphazene compound may be represented by Chemical Formula (LPH-1):where: / ^represents the linker moiety, comprising at least one of. a single bond, C, CH, CH2, CHF, CF2nitrogen (N), NHsulfur (S), oxygen (O), an ether, asubstituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycioalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocydoatkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondokj moiety, and an unsubstituted diamondoid moiety;R represents the cyclophosphazene moiety functional group, each R independently comprising at least one of: F, chlorine (Cl), a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cydoalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heteracyctoalkyl group, an unsubstituted heterocycloalkyl group, a substituted fluoroheterocycloalkyl group, an unsubstituted fluoroheterocydoalkyi group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroaikoxy group, an unsubstituted fluoroalkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted fluoroheteroaryloxy group, a unsubstituted fluoroheteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted alkylsilyl group, an unsubstituted alkylsiyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkyfamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a trifluoromethylthio group, a carbonyl group, a siloxane group, a silane group, and an organosiicon group;m and n are each integers between 2-4; and each R1is independently at least one of: hydrogen (H), deutero (D), F, a substituted alkyl group, an unsubstituted altyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryt group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0164] In some non-limiting examples, an absolute value of a difference between m and n may be one of: 0, and 1 In some non-limiting examples, m and n may each be integers between 2-3.
[0165] In some non-limiting examples, at least one of n, and m, may be 2, such that a corresponding cyclophosphazene moiety may be a cyclotriphosphazene moiety. In some non-limiting examples, at least one of: n, and m, may be 3, such that a corresponding cyclophosphazene moiety may be a cyciotetraphosphazene moiety.
[0166] Without wishing to be bound by any particular theory, it may be postulated that a linked cyclophosphazene compound represented by Chemical Formula (LPH-1) may have applicability as at least one of a patterning coating 110, and a patterning material 411, that facilitates selective deposition of a deposited material 531. In some non-limiting examples, it has been found that the use of such patterning material 411 may provide at least one of: a substantially high deposition contrast; a substantially low propensity for a patterning coating 110 comprising the patterning material 411, to undergo crystallization; and a substantiafly low propensity for the patterning coating 110 comprising the patterning material 411, to undergo cohesive failure, including without limitation, delamination.
[0167] In some non-limiting examples, a quotient of: a total number of F atoms / a total number of silicon (Si) atoms in the linked cyclophosphazene compound may be one of no more than about: 5, 4, and 3.
[0168] In some non-limiting examples, the linked phosphazene compound may exhibit substantially no absorption of light in at least one of: the visible spectrum, and the NIR spectrum, including without limitation, at a wavelength of between about: 350-1,400 nm.
[0169] In some non-limiting examples, the linked cydophosphazene compound may have an optical gap of one of at least about: 3.4, 35. 4.1 , 5.0, and 6.2, eV.
[0170] In some non-limiting examples, the linked cydophosphazene compound may exhibit substantially no photoluminescence in a wavelength range of between about 380- 700 nm.
[0171] In some non-limiting examples, the linked cyclophosphazene compound may be solid at room temperature and pressure.
[0172] In some non-limiting examples, a melting point of the linked cydophosphazene compound may be no more than a sublimation temperature thereof
[0173] In some non-limiting examples, the melting point of the linked cydophosphazene compound may be one of at least about; 70, 80, 85, 90, 100, 110, and 120*G.
[0174] In some non-limiting examples, the melting point of the linked cydophosphazene compound may be one of no more than about: 350, 330, 300, 280, 250, 230, and 210*C.
[0175] In some non-limiting examples, the sublimation temperature of the linked cydophosphazene compound may be one of at least about: 110, 130, 150, 160, 170, 180, and 200°C.
[0176] In some non-limiting examples, the melting point of the linked cydophosphazene compound may be one of at least about: 70, 80, 85, 90, 100. 110, and 120°C, and the sublimation temperature of the compound may be between about 110- 300°C.Linker moietv.
[0177] In some non-limiting examples, the linker moldy U may compose at least one of: a cydic moiety, and an acyclic moiety.
[0178] In some non-limiting examples, the linker moiety Lc may form a chain structure with the first cydophosphazene moiety and the second cydophosphazene moiety.
[0179] In some non-limiting examples, the linker moiety L.- may form a cydic structure with s P atom of at least one of: the tirst cydophosphazene moiety, and the second cydophosphazene moiety.
[0180] In some non-limiting examples, the linker moiety may comprise at least one of: a single bond, C, CH, CH2, CHF, CF2, N, NH,S, O, an ether, asubstituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroaikylene, an unsubstituted fluoroalkylene. a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cydoalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety; each R1is Independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fiuoroalkyl group, a cydoalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryi group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, end an alkynyl group. In some non-limiting examples, the amine may be at least one of: a secondary, and a tertiary, amine. In some non-limiting examples, the arylene may be a C5-C30arylene. In some non-limiting examples, the heteroarylene may be a C4-C30heteroarylene. In some non-limiting examples, the cydoalkylene may be a C4-C30cydoalkylene.
[0181] In some non-limiting examples where the linker moiety comprises a heteroatom, the heteroatom may act as a bonding site for at least one of: the cyclophosphazene moiety, and at least one R group to be bonded thereto, where the heteroatom is available for formation of such bond(s).
[0182] In some non-limiting examples, the Inker moiety may have a molar mass of one of at least about: 12, 13, 15, 16, 20, 25, 30, 40, 50, 70, 100, 120, 130, and 150, g / mol.
[0183] In some non-limiting examples, each linker moiety may have a molar mass of one of no more than about 500, 450, 400, 350, 300, 250, and 200, g / mot,
[0184] In some non-limiting examples, a percentage of the molar mass of the linked cyclophosphazene compound that may be attributable to the at least one linker moiety maybe one of at least about: 0.2, 0.3, 0.5, 0.7, 1.1, 1.5, 1,7, 1.8, 2.0, 2.3, 2.5, 2.7, 2.9, 3.1, 3.3, 3.5, 3.7, 4.0, and 4.5%.
[0185] In some non-limiting examples, a percentage of the molar mass of the Inked cydophosphazene compound that may be attributable to the at least one linker moiety may be one of no more than about: 5.5, 5.8, 8.0, 6.8, 7.0, 8.5, 8.7. 9.0, 92. 9.5. 9.7, 10.0, and 12.0%.Linker moiety comprising a cyclic moietv
[0186] In some non-limiting examples, the linker moiety may comprise at least onecyclic moiety.
[0187] In some non-limiting examples, the cyclic moiety may be one of: directly, and indirectly, connected to at least one of the plurality of cydophosphazene moieties, including without Imitation, the first cydophosphazene moiety, and the second cydophosphazene moiety. In some non-limiting examples, a ring atom of the at least one cyclic moiety may be directly connected to at least one P atom of at least one of the plurality of cydophosphazene moieties. In some non-limiting examples, a ring atom of the at feast one cyclic moiety may be connected to at least one P atom of at least one of the plurality of cydophosphazene moieties via a spacer moiety.
[0188] In some non-limiting examples, the linker moiety may be represented by Chemical Formula (LK-1): where:ey represents a cydic moiety; each independently represents a spacer moiety; and each ndependently represents a point of attachment to one of the plurality ofcydophosphazene moieties.
[0189] In some non-limiting examples, the tanker moiety may comprise at least two cydic moieties and at least one bridging moiety. In some non-limiting examples, the linker moiety may comprise a first cyclic oety, a second cyclic moiety, and a bridging moiety bonded to the first, and the second, cyclic moiety.
[0190] In some non-limiting examples, the linker moiety may be represented by Chemical Formulawhere: each independently represents a cyclic moiety; each ndependently represents a spacer moiety;represents a bridging moiety, endeach independently represents a pant of attachment to one of the plurality of cyclophosphazene moieties.
[0191] In some non-limiting examples, the linker moiety may comprise at least three cyclic moieties. In some non-limiting examples, the linker moiety may comprise a first cyclic moiety, a second cyclic moiety, a third cyclic moiety, and a bridging moiety bonded to the first, second, and third, cyclic moiety.
[0192] In some non-limiting examples, the linker moiety may be represented byChemical Formula (LK-3):where: each y independently represents a cyclic moiety; each ndependently represents a spacer moiety;represents a bridging moiety; andeach * independently represents a point of attachment to one of the plurality of cyclophosphazene moieties.
[0193] In some non-limiting examples, the linker moiety may comprise a plurality of bridging moieties. in some non-fimiting exampies, where there are N cyclic moieties in the linker moiety, a number of bridging moieties may be between 1 to In some non-limiting examples, the linker moiety may comprise a first cyclic moiety, a second cyclic moiety, a third cyclic moiety, a first bridging moiety bonded to the first, and second, cyclic moiety, and a second bridging moiety bonded to the second, and third cyclic moiety.
[0194] In some non -limiting examples, the linker moiety may be represented by Chemical Formula (LK-4):where: each ndependently represents a cyclic moiety, each dependently represents a spacer moiety; each ndependently represents a bridging moiety; and each dependently represents a point of attachment to a cydophosphazene moietySpacer moiety,
[0195] In some non-limiting examples, the spacer moiety, may correspond to apart of the linker moiety arranged between a cyclic moiety and a cydophosphazene moiety. In some non-limiting examples, the spacer moiety may be bonded to a P atom of thecydophosphazene moiety, and one of: a C atom, and a heteroatom, of the cydic moiety. In some non-limiting examples, the total number of spacer moieties may be no more than a total number of cydophosphazene moieties in the linked cydophosphazene compound.
[0196] In some non-limiting examples, the spacer moiety may comprise at least one of: a single bond, O, S, N, C, an ether, a thioether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fiuoroalkylene, an unsubstituted fiuoroalkylene, a substituted cycloakylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene
[0197] In some non-limiting examples, the spacer moiety may comprise O. In some non-limiting examples, the linker moiety may be represented by one of: Chemical Formulae (LK-5) and (LK-6):where: each ndependently represents a cyclic moiety;represents a bridging moiety; andeach Independently represents a point of attachment to one of the plurality of cyclophosphazene moieties.Cyclic motetv.
[0198] In some non-limiting examples, the cyclic moiety,may independently comprise at leas! one of: a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene.
[0199] In some non-limiting examples, at least one of the arylene, and the fluoroarylene, may comprise between 5-30 sp2C atoms. In some non-limiting examples, the heteroaiylene may comprise between 4-30 sp2C atoms. In some non-limiting examples, the cycloalkylene may comprise between 3-6 C atoms.[962W] In some non-limiting examples, the cycloalkytene may Comprise at least one of: cyclopropylene, cyclopentylene and cyclohexylene.
[0201] In some non-limiting examples, the heteroarylene may be derived by replacing at least one ring C atom of an arylene with a corresponding number of heteroatoms. In some non-limiting examples, at least one such heteroatom may be independently selected from one of. N, O, and S.
[0202] In some non-limiting examples, at least one ring atom of the cyclic moiety may independently attach to at least one substituent group, including without limitation, at least one up: afluoroalkyl group; a fluoromethyl group; a difluoromethyl group; a trifluoromethyl group; afluoroethylgroup;a polyfluoroethylgroup;acycloalkylgroup,includingwithoutlimitation,a C3-C6cycloalkylgroup;analkoxygroup,includingwithoutlimitation,a C1-C6alkoxygroup; ahaloalkoxygroup;afluoroalkoxygroup;adifluoromethoxygroup;atrifluoromethoxy group;anarylgroup;aheteroarylgroup;afluoroarylgroup;apolyfluaraarylgroup;a4- fluorophenylgroup;a3.4,5-trifluorophenvlgroup;a4-(trifluoromethoxy)phenvfgroup;a sulfanylgroup;afluoroalkylsulfanylgroup;andatrifiuoromethylsulfanytgroup.Insome non-limitingexamples,thesubstituentgroupmaycomprise F.
[0203] Insome non-limitingexamples,thecyclicmoietymaycompriseone of ChemicalFormulae (LR-1)-(LR-65):where in each of Chemical Formulae (LR-1 ) - (LR-65):each * independently indicates a point of attachment to at least one ofc a cyclophosphazene moiety, a spacer moiety, and a bridging moiety.fluoromethyl group, a difluoromethyl group, a trifluoromethyl group; a fluoroethyl group; a polyfluoroethyl group; a cydoalkyl group, including without limitation, a C3-C6cycloalkyl group; an alkoxy group, including without limitation, a C1-C6alkoxy group; a haloalkoxy group; a fluoroalkoxy group; a difluoromethoxy group, a trifluoromethoxy group, an aryl group; a haloaryl group; a heteroaryl group; a fluoroaryl group; a polyfluoroaryl group; a 4- fluorophenyl group; a 3,4,5-tnfluorophenyl group; a 4-(trifluaromethoxy)phenyf group; a nitro group; a cyano group; a phosphine oxide group; a diphenyl phosphine oxide group; a pentafluorusulfanyl group; a fluoroalkylsulfanyl group; and a trifluoromethyfsulfanyl group.Aromatic moiety
[0204] in some non-limiting examples, the cyclic moiety,may comprise an aromatic moiety In some non-limiting examples, the cyclic moiety, may be an aromaticmoiety.100205] In some non-limiting examples where the Inker moiety comprises two cyclic moieties, ay be an aromatic moiety. In some non-limiting examples, bothmay be aromatic moieties. In some non-limiting examples, one o ay be an aromatic moiety, and the other may be a non-aromatic cyclic moiety, including without limitation: a substituted cycloalkyf moiety, an unsubstituted cydoalkyl moiety, a substituted fluorocydoalkyl moiety, an unsubstituted fluorocycloalkyl moiety, a substituted heterocycloalkyl moiety, an unsubstitutedheterocycloalkyl moiety, a substituted fluoroheterocydoalkyl moiety, and an unsubstituted fluoroheterocycloalkyl moiety.
[0206] In some non-limiting examples, the linker moiety may be represented byChemical Formu where:each Ar independently represents an aromatic moiety, represents a bridging moiety; andeach * independently represents a point of attachment to one of the plurality of cyclophosphazene moieties.
[0207] In some non-limiting examples where the linker moiety comprises three cyclic moieties,at least one o be an aromatic moiety,while the remaining cyclic moieties may each be a non-aromatic cyclic moiety. In some non-limiting examples, at least two o may be an aromatic moiety, whilethe remaining cyclic moiety may be a non-aromatic cyclic moiety. In some non-limiting examplesmay ail be aromatic moieties. In some non-limiting examples, the non-aromatic cyclic moiety may be one of a cydoalkyl moiety, a fluorocydoalkyl moiety, a heterocycloalkyl moiety, and a fluoroheterocydoalkyl moiety.
[0208] in some non-limiting examples, the linker moiety may be represented by Chemical Formula (LK-8):where: each dependently represents an aromatic moiety; each dependently represents a bridging moiety; and each resents a point of attachment to one of the plurality of cyclophosphazene moieties
[0209] In some non-limiting examples, the aromatic moiety may be a monocyclic aromatic moiety. In some non-limiting examples, the aromatic moiety may be a polycyclic aromatic moiety, including without limitation, a bicyclic aromatic moiety, and a tricyclic aromatic moiety, in some non-limiting examples, the aromatic moiety may be an aromatic hydrocarbon moiety. In some non-limiting examples, the aromatic moiety may be a heterocyclic aromatic moiety in which at least one C ring atom of the aromatic moiety has been replaced by a corresponding number of heteroatom(s), including, without limitation, at least one of: O, N, and S. In some non-limiting examples, the aromatic moiety may be one of: a substituted phenyl moiety, and an unsubstituted phenyl moiety.
[0210] In some non-limiting examples, the aromatic moiety may comprise at least one ot a 6-20 membered aromatic moiety, a 6-15 membered aromatic moiety, and a 6-9 membered aromatic moiety. In some non-limiting examples, the aromatic moiety may comprise between 6-30 C atoms. In some non-limiting examples, the aromatic moiety may comprise one of no more than about: 15, 12, 11, 10, and 6, sp2C atoms.
[0211] In some non-limiting examples, the aromatic moiety may comprise a six- membered ring structure, including without limitation, a phenyl In some non-limiting examples, at least one of the spacer moieties, including without limitation, O, may be attached to a ring atom of the aromatic moiety, and may be in one of : an ortho, a meta, and a para, position, with respect to the bridging moiety, which is attached to another ring atom of the aromatic moiety. In some non-limiting examples, at least one of the spacer moieties, including without limitation, O, may be in a para position with respect to the bridging moiety.
[0212] In some non-limiting examples, the aromatic moiety may comprise a structure represented by me of Chemical Formulae (AR-1)-(AR-34):
[0213] In each of Chemical Formulae (AR-1)-(AR-34), at least one ring atom may attach to one of a cyclophosphazene moiety, a spacer moiety, and another aromatic moiety, in some non-limiting examples, at least one of the remaining ring atom may attach to a substituent R*. In some non-limiting examples,may comprise at least one of: H, D, F, Cl, an alkyl group, an alkenyl group, an alkynyl group, a fluoroalkyl group, a ffuoromethyl group, a drfluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a polyfluoroethyl group, a cycloalkyl group, a fluorocycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoraalkolky group, s difluoromethoxy group, a trifluoromethoxy group, an aryl group, a heteroaryl group, a fluoroaryl group, a polyfluoroaryl group, a 4-fluorophenyl group, a 3.4,5- tnfluorophenyl group, a 4-(trifluoromethoxy)phenyl group, a sulfonyl group, a fluoroalkylsulfanyl group, a trifluoromethylsulfanyl group, a silyloxy group, a sulfide group, a carbonyl group, a nitro group, a cyano group, a phosphine oxide group, and a diphenyl phosphine oxide group
[0214] In some non-limiting examples, the inker moiety comprising an aromatic moiety may comprise a structure represented by at least one of Chemical Formulae (LM-1 ) (LM-106):where in each of Chemical Formulae (LM-1) to (LM-106):* indicates a point of attachment to one of: a cyclophosphazene moiety, a spacer moiety, a cyclic moiety, a nd a bridging moiety; jffs independently re presents at least one of: S; O; a carbonyl group: a sulfonyl group; a substituted phosphine oxide group; an unsubstituted phosphine oxide group; a substituted alkyl group, including without limitation, a substituted kyl group; anun substituted alkyl group, including without limitations ^n unsubstituted alkyl group; acycloalkyl group, including without limitation, a ycloalkyl group; and an aryl group;each independently represent at least one of: H; D; F; Cl; an alkylgroup, including without limitation, a alkyl group; a cycloalkyl group, including withoutlimitation, cycloalkyl group; an alkoxy group, including without limitation, aalkoxy group; a fluoroalkyl group; a haloaryl group; a heteroaryl group; a haloalkoxy group; a fluoroaryl group; a fluoroalkoxy group; a fluoroalkyisulfanyl group; a 11 uerom ethyl group; a d^uorom ethyl group; a trifluoromethyi group; a difluoromethoxy group; a trifluoromethoxy group; a fluoroethyl group; a polyfluoroethyl group: a 4-fluorophenyl group: a 3,4,5- trifluorophenyl group; a polyfl uoroary I group; a 4-(trifluorom ethoxy) phenyl group; a carbonyl group; a nitro group; a cyano group; a phosphine oxide group; a diphenyl phosphine oxide group; and a trifluoromethylsultenyl group; jr is an integer between 0-2; y is an integer between 0-12; zfe an Integer between 0-4, andM represents one oft O, and S,
[0215] Those having ordinary skill in the relevant art will appreciate that any one of the moieties represented by Chemical Formulae (LM-1)-(LM-106), when representing a linker moiety, may be bonded tn another part of the molecule, including without limitation, the P atom(s) of the cyclophosphazene moiety (les), by at least one of. a C atom, and a heteroatom, at any site available for formation of such bond(s).
[0216] In some non-limiting examples, at least one C atom of a linker moiety, including without limitation, those represented by any one of Chemical Formulae (LM-1 > (LM-106), may be substituted by a corresponding number of heteroatomfs), including without limitation. at least one of: O, N, S, and Si.
[0217] In some non-limiting examples, the linker moiety may be represented by one of: Chemical Formulae (LK-9), (LK-10) and (LK-11):where:each ^independently represents a bridging moiety; each independently represents a point of attachment to one of the plurality of cyclophosphazene moieties;; each # independently represents at least one of: H, D, F, Ch bromine (Br)tan alkyl group, cycloalkyl group, an alkoxy group.. 3 flneroalkyl^group, a hefoaryl group, a heteroaryl group, a haloalkoxy group, a fluoroaryl group, a fluoroalkoxy group, a fluoroalkylsulfanyl group, a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a difluoromethoxy group, a tnfluorom ethoxy group, a fluoroethyl group, a polyfiuuroethyl group, a 4 -fluorophenyl group, a 3,4,5-tnfiuoraphenyI group, a polyfkraroaryl group, a 4-(tnflmromethoxy)phenyl group, a carbonyl group, a nitro group, a cyano group, a phosphine oxide group, a diphenyl phosphine oxide group, and a trifluoromethylsulfanyl group, and n is an Integer between 0-4.(00218] In some non -limiting examples, the bridging moiety,may correspond to a pad of the linker moiety arranged between at least two cyclic moieties. In some non- limiting examples, the bridging moiety & may bond to one of a C atom, and a heteroatom , of each of the cyclic moiety. In some non-limiting examples where at least two cyclic moieties are present, the linker moiety may comprise at least one bridging moiety bonded to at least two cyclic moietles. In some non-limiting examples, the linker moiety may be bonded to mors than two cyclic moteties In some non-limiting examples where Af cyclic mofettes are present in the inker moiety, the number of bridging moieties may be between 1 to (AM).
[0219] In some non-limiting examples, the bridging moiety , £•« may comprise at least one of: a single bondCO, SO2, an ether, a thioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an im substituted alkylene, a substituted fluoroalkylene, an unsubstRuted fluoroalkylene, a substituted arylene, an unsubstituted erylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cyctoalkylene, an unsubstituted cycloalkytene, a substitutedheteroalky ten®, an unsubstituted heteroalkylene, a substituted heterocycloalkytene, and an un substituted heterocycloa Iky lene. In some non-limiting examples, eachmay in dependently represent at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a tiuoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group. a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0220] In some non-limiting examples, the bridging moiety,may be represented by any one of Chemical Formulae (BM-1 )-(BM-56):where in each of Chemical Formulae (BM-1 )-( BM-56):*' represents a point of attachment to at least one cyclic moiety.
[0221] amples, the itokg-e mr>i@ty composing at least onecyclic moiety may be represented by one of Chemical Formulae (LC-1 HLC-297):where in each of Chemical Formulae (LC 1}-(LC»297): each * independently represents a point of atachment to one of the plurality of cyci op hosph azene moi sties.Linker moiety comprising an acyclic moiety
[0222] In seme non-limiting examples, the linker moiety, may comprise an acyclicmoiety, including, without limitation, at least one of. a single bond. CCO, an ether, a substituted amine (including without limitation, a secondary, and a tertiary, amine), an unsubstituted amine (including without limitation, a secondary, and a tertiary, amine), a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted heteroalkylene, and an unsubstituted heteroal kylene. In some non-limiting example may eachindependently represent at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloafkyl group, an alkoxy group, a ha ioalkoxy group, a fluoroalkoxy group, a carbonyl group, a nitro group, a sufllde group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0223] In some non-limiting examples may comprise a phosphazene moiety, including without limitation, at least one of: a linear, and a branched, moiety, which may be represented awhere x is an integer. In some non-limiting examples, the phosphazene moiety may be provided in conjunction with one of the plurality of cyclophosphazene moseties of the linked cyclophosphazene compound.(00224] In some non-limiting examples, 4? may comprise at least one of a: CH2, CF2, CF2H. and CF3. moiety.
[0225] In some non-limiting examples, an atom of the acyclic moiety may be directly connected to at least one P atom of at least one of the plurality of oydophosphazeoe moieties. In some non-limiting examples, an atom of the acyclic moiety may be indirectly connected to at least one P atom of at least one of the plurality of cyclophosphazene moieties via a spacer moiety.: In some non-limiting examples, the spacer moiety may comprise at least one of: a single bond, O, S. N, C, an ether, a thioether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an un substituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylensi. and an unsubstituted heteroarylene.
[0226] In some non-limiting examples, the linker moiety may comprise a structure represented by at least one of Chemical Formulae (LA-1 )-(LA-6):where in each of Chemical Formulae* indicates a point of attachment to one of: a cyclophosphazene moiety, and a spacer moiety;ach independently represent at least one of: H: D; F; Cl; an alkyl group, including without limitation, a alkyl group; a cycloalkyl group, Including withoutlimitation, ycloalkyl group; an alkoxy group, including Without limitation, a Calkrocy group; a fltroroslkyl group, a halomyl group, a aa fiuoroaryl group, a fluoroalkoxy group, a fluoroalkylsulfanyl group, a fl uo ram ethyl group, a difluoromethyl group, a trifluoromethyl group, a difluoromethoxy group, a trifluoramethoxy group, a fhroroethyl group, a polyfluoroethyl group, a 4-fluorophenyl group, a 3,4,5- tnfluorophenyl group, a polyfluoroaryl group, a 4-(trrfluorom ethoxy) phenyl group, and a trifluoromethylsulfanyl group.
[0227] In some non -limiting examples, the linker moiety may cam prise a structure represented by Chemical Formula (LA-7): where:each * independently indicates a point of attachment to one of the plurality of cyclophosphazene moieties;,yis an integer between 0-6; y is an integer between 0-20; and^•y-yis at least 1.
[0223] In some non-limiting examples, the linked cyclophosphazene compound may comprise a plurality of cyclophosphazene moiety functional groups, R (herein also referred io us au “R group"), in wne non-iini'iting examples, eL iwsi one P atom of ai feesi one of the plurality of cyclophosphazene moteties may be substituted, including without limitation, by at least one of the plurality of ^groups.
[0229] In some non dim hi ng examples, each R group may Independently com peso at least one of: F, Cl, a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoro® Iky I group, a substituted cy chalky I group, an unsubstituted cycle® Iky I group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heterocycloalky I group, an unsubstituted heterocycloalkyl group, a substituted fluoroheterocycloalkyl group, an unsubstituted fluoroheterocycloalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroaikoxy group, an unsubstituted fluoroaikoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted heteroaryloxy group, a unsubstrtuted heteroaryloxy group, a substituted fluoroheteroaryloxy group, a un substituted fluoro heteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fiuoroaryl group, a substituted ®lkylsilyl group, an unsubstituted afkylsilyl group, a substituted a iky teitexy group, *sn unsu bruited ^ikyisitexy group, an dmino group, an amine group, an alkylamine group, an aryiamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfenyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a trifluoromethylthio group, a carbonyl group, a siloxane group, a silane group, and an organosifccon group.
[0230] In some non-limiting examples, each A?group may independently comprise atfeast one of: F, Cl, a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group* a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluroaikoxy group, an unsubstituted fluoroaikoxy group, a substituted aryl group, an un substituted aryl group, a substitutedfluoroaryl group, an unsubstituted fluoroaryl group, a substituted aryloxy group, an un substituted aryl oxy group, a substituted fluoroaryl oxy group, an un substituted fluoroaryloxy group, an amino group, an amine group, an alkylamine group, and an arylamine group,[W231] tn some non limiting exWrptes, dadh group may mdppPnttePtty coriiprise at least one of: F, Cl, a hydroxyl group, a C1-C12alkyl group, a Cr-Cia fiuoroalkyl group, a Ci- C?s alkoxy group, a Ch Os* fluoroalkoxy group, a OCm aryl group, a C>Cfa fluoroaryl group, a C3-C18aryloxy group, a Ca-Gis fiuoroaryloxy group, an amino group, a Ct-Chz alkylamine group, and a C«-C« arylamine group.
[0232] tn some non-limiting examples, each R group may independently comprise atfeast one of a: G1-C12 alkoxy group, C@-C?s aryloxy group, and C3-C18fluoroaryloxy group.
[0233] In some non "limiting examples, at least one of the R groups may comprise a backbone, and at least one F atom attached thereto. In some non -limiting examples, the backbone may be a C-oontaining backbone In some rmndimitmg examples, the backbone may comprise a heteroatom, including without limitation, Si.
[0234] In some non -limiting examples, each of the R groups may comprise a linker group, M an intermedhte group,and a terminal group, Rr. In some non-limiting examples, the J? group may comprise a branching moiety,In same non-limiting examples, the R group may comprise at least one saturated bond. In some non -limiting examples, the bonds of the J? group may b@ substantially wturaiad ■ bonds, such that th® R group is a saturated moiety. In some non-limiting examples, various moietles of the R group, including without limitation, M / F.and M may be saturated mofeties.
[0235] Without wishing to be bound by any particular theory, It may be postulated that the presence of multiple ether units within a single R group may decrease a melting point of the linked cycle phosphazene compound, which may have reduced applicability in at least certain scenarios. In some non -limiting examples, the R group may comprise one of no more than about: 4, 3, 2, and 1 , ether unit.100236] In some non -limiting examples, the $ group may be represented by Chemical Formula (E-1 ):where:* indicates a point of attachment to one of the plurality of cyclophosphazene moieties; represents a linker group; represents a intermediate group; and represents the terminal group.(00237] In some non -limiting exam pies, the linker group may correspond to aterminal part of the group proximate to the cyclop has ph azene moroty, and may compose the atom(s), by which the R group may be bonded thereto,
[0238] in seme non-limiting exampleay comprise at least eno of: a single bond, O::N, S, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an un substituted lluorealkytene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene, a phosphazene backbone monomer, and a phosphazene group. In some non-limiting examples, may comprise M least oneof: a single bond, O, N, S, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, and an unsubstituted fluoroalkylene. In some non-limiting examples, may comprise at least one of: a single bond, O, N, S, an alkylene, a fluoremethylene, and a difluoromethytene
[0239] In some non-limiting exampay comprise at least one of: a single bond, In some non-limitingexamples, may each independently represent at least one of. H, D, F, a substituted alkyi group, an unsubstituted slkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxygroup, an aryl group, a h al caryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group..
[0240] In some non -limiting examples, the Intermediate group,ay correspond to a part of th group arranged between the i inker group and the terminal group. In surnenon-tlmitlng examples ay comprise at feast one of: O, an ether, a substituted alkylene,an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cyctoaikylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, end an unsubstituted heteroarylene. In some non-limiting examples,may comprise an F atom. In some non-hmltlng examples, / i® may comprise a fluoroalkylene unit. In some non-limiting examples, may comprise atI asst one of: a unit, a CFH unit, and a CHs unit. In some non-l imiting examples,may eotopttefe a piuraity o unite bonded together to term a flwtotokyteim. kicfedmgwithout limitation, a part thereof. In some non-limiting examples may comprise at leastone CH2unit and at least oneunit In some non-limiting examples may comprisean ether unit In some non-limiting examples may compose saturated bonds-: In somefurther non-limiting examplesmay be substantially devoid of any unsaturated bonds. In some non-limiting examples,may comprise one of no more than about: 15, 13, 12, and 10, C atoms. In some non-limiting examples may comprise at least one of: O, an ether,a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, and an
[0241] In some non -limiting examples, the terminal group,may correspond to a terminal part of thegroup, including without limitation, a distal part thereof with respect to the cyclophosphazene moiety. In some non-limiting examples, the terminal part may correspond to the terminal part of the group opposite to the linker group. In some non-limiting examples where the group comprises a cyclic linker group may refer to amoiety atached to a ring atom of the cyclic linker group. In some non-limiting examplesmay comprise an F atom. In some non-limiting examples may comprise a branchedaikyh an unbranched alkyl. a branched iluoroaikyi, an unbranched fluoroalkyi, a substituted heterocycloalkyl, an unsubstituted heterocycloalkyl, a branched fluoroalkoxy, anun bran ch ad fluoroalkoxy, a fluoroaryi, a polyfluorosulfanyl, and a fluorocycloalkyl. In some non “limiting examples, Z?rmay comprise a branched alkyl, an un branched alkyl, a branched fluoroalkyl, an unbranched iluoroalkyl, a branched fluoroalkoxy, and an unbranched fluoroalkoxy. In some non “limiting examplesmay comprise one of no more than about 8, 6. 5. 3. 2. and 1. C atom(sk In some non-limiting examples may comprise at leastone(00242] In some non-limiting examples, the branching moiety may correspond to a part of the J? group from which at least two branches of the backbone extend. In some non -limiting examples ay act as a branching point of the backbone. In some non-limiting examples, branching may occur by bonding o at test three of the other m oieties forming t oup. In some non-limiting examples ay be arranged in variousconfigurations of th group, and may be bonded to at least one osorha norrbnfitmg oxampfes, at least three m oieties bonded to A" rhay be on® of: ths sarns, and different. In some non-limiting examples, may be bonded to a plurality of at leastone ohere the roup may comprise a plurality of at least one of: A® andn some non-limiting examples, ay comprise at least one of. O, N, S, an amine, a substituted alkylene, an on substitutylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkytene, a substituted heterocycloalkylene, an unsubstituted heterocycloalkylene, a substituted arytene, an un substituted aryfene, a substituted heteroarylene, and an unsubstituted hetertwytene. te some n®?? dfrmtfeg examples, may comprise -at feast one of: O, N, S,an amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, and an unsubstituted fluoroalkylene. In some non-limiting examplesmay comprise one of no more than about: 8, 6, 5, 3, 2, and 1 , C atom(s). In some non-limiting examples,may be substantially devoid of any C atoms.
[0243] In some non-limiting examples n Chemical Formula (E-1 ) may berepresented by one of Chemical Formulae (EA-1 )-(EA-6):wherein a secondary group containing: anIntermediate g
[0244] In some non-limiting examples, the terminal group may be bonded to theintermediate group AP of the secondary A group. In some non-limiting examples, the secondary R group may be represented by Chemical Formula (ED-1):
[0245] In some non-limiting examples,and ^of the secondary group may be identical in molecular structure to of the R group, including without limitation,those in Chemical Formula (E-1 ). In some non -limiting examples, at least one of J?" and Rrof the secondary group may be different fromnd of the R group. Those havingordinary skill in the relevant art will appreciate that In some non -limiting examples, descriptions regardingrovided heroin in r elation to the group may haveapplication to f the secondary A' group.
[0246] In some non-limiting examples, 7?^ in Chemical Formula (E-1 ) may be represented by Chemical Formula (EB-1 ):where: y independently represents, upon each occurrence, one of: H„ D, F, and CF3; a is an integer between 0-6;is an integer between 0-12; and sum o is at least 1.
[0247] In some non -limiting examples, a sum of and b may be one of no more than: 15: 12, 10, and 9.
[0248] In some non-limiting examples, n Chemical Formula (EB-1) may berepresented by one of Chemical Formulae (EB-10)-(EB-21):where in each of Chemical Formulae (EB-10)-(EB-21): s an integer between 4-9.
[0249] In some non -limiting examplesmay be an integer between 2-4 and maybe an integer between 5-9, and a sum ofmay be an integer between 6 13.
[0250] In some non-limiting examples,Chemical Formula (E-1 ) may be represemeu uy one o
[0251] In some non -limiting examples, the A’ group, including without limitation, one of Chemical Formulae (E-2XE-4), may comprise a branching moiety, M as represented by ore of Chemical Formulae (E-2XE-4):
[0252] In some non-limiting examples, the roup may comprise a Containingbackbone in a dosed ring configuration, including without limitation, to form a cyclic structure, including without limitation, these comprising a fluorocycloaikyl, including without limitation, perfluorocyclopentyl, and peril uorocyclohexyl.
[0253] In some non -limiting examples, descriptions of at / F herein, may have application to corresponding references iogroup, including without limitation, those in Chemical Formulae (E-2>(E-4).
[0254] In some non limiting examples where the J? group comprises a plurality of the same mosetfes, including without limitation, a plurality of at least one ofeach such moiety may bo selected independently upon each occurrence.100255] In some non -limiting examples, at least one R group of the linked cyclophosphazene compound may comprise a low surface tension moiety.
[0256] A surface tension attributable to a fragment of a molecular structure, including without limitation, at least one of: a first cyclophosphazene moiety, a second cyclophosphazene moiety, a linker moiety, and a cyclophosphazene moiety functional group, may be determined using various known methods in the art, including without limitation, the use of a Parachor, such as may be further described, by way of non -limiting example, in “Conception and Significance of the Parachor”, Nature 196: 890-891.
[0257] In some non -limiting examples, a critical surface tension attributable to a low surface tension moiety may be one of no more than about: 25, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11 , and 10, dynes / cm.
[0258] hi some non-limiting examples, the low surface tension moiety may be a F- contalnmg moiety In some non-limiting examples, at least one R group of the linked cyclophosphazene compound may comprise a F-containing moiety. In some non-limiting examples, a majority of the plurality of roups may independently comprise a F-con taming moiety In some non -limiting examples, substantially all of the plurality of R groups may independently comprise a F-containing moiety.
[0259] In some non-limiting examples, the F-containing moiety may be bonded, at least one of: directly, and via a baker group, to a P atom of a phosphazene backbone monomer. In some non -limiting examples, the linker group may comprise at least one of: a single bonIn some non- limiting examples, eacmay independently represent at least one of H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroaikyf group, an unsubstituted fiuoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a hak>aryl group, a heteroaryl group, a tluoroaryl group, a carbonyl group, s nitro group, a sulfide group, a sutfonyl group, an alkenyl group, and an slkynyl group,
[0260] In some non -limiting examples, the linker group may comprise at least one of; a single bond, O, N, S, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, anun substituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene, a phosphazene backbone monomer, and a phosphazene group. In some non-limiting examples, the linker group may comprise at least one of: a single bond, O, N, S, a substituted alkylene, an u n substituted alkylene, ag examples, the inker group may comprise at least one of: a single bond, O, N, S?an alkylene, a fluoromethylene, and a difluoromethylene.
[0261] In some norh limiting examples, the F-oon taming moiety may comprise at least one of: a substituted fluoroalkyl, an un substituted fluoroalkyl, a substituted fluoroafkoxy, an un substituted fluoroalkoxy, e substituted flu oroal kylsil oxy, an un substituted fluoroalky Isfioxy. a substituted fluorocycloalkyl, an im substituted fluorocycloalkyl, a substituted fluoroaryl, and an unsubstituted fluoroaryL In some non-limiting examples, the F-conteinkig moiety may comprise a fluorocarbon unit, including without limitation, at least one of aandunit In some non-limiting examples, the F-conteining moiety may comprise a terminal unit comprising oneandIn some non -limiting examples, the terminal unit may correspond to a terminal part of the F-containing moiety that is distal with respect to the P atom of the cyclophosphazene moiety to which the F-containing moiety may be attached.100262] In some non -limiting examples, the F-containing moiety may comprise a fkioroalkyl moiety, including without limitation, a C3-C18fluoroalkyl
[0263] In some non-limiting examples, the fluoroalkyl group may comprise at least one of: group. In some non-limitingexamples, the F-containing moiety may comprise a fluoroalkyl moiety represented by Chemical Formula (FL-1 ):is an integer between 0-8 ,yis an integer between 1-20; and .4 is one of: H, D, and F.
[0264] In some non-limiting examples, jrmay be an integer between 1-4may be an integer between 3-10, and / I may be one of: H and F. In some non-limiting examplesmay be one of: 1 and 2,may be one of: 3, 4, 6, and 8, andmay be one of H and F. In some non'-limlting examples, x may be 2, ay be 1 , andmay be one of: H and F„ Insome non-limting examples, .vand yiray sum to one of no more than: 15, 12, 10, and 8,
[0265] In some non-limiting examples, the F-containlng moiety may compose a ftooroalkyl moiety of Chemical Fomin I a (FL-2):where: x y x and a, are each integers between 1-8, andJ is one of. H and F
[0266] In some non -limiting examples, .may be an integer between 1-3, ay bean integer between 1-6, zmsy be an integer between 1-3, andmay be an integer between 1-6. In some n on -I smiting examples, at least one ofand may be one of nomore than: 5, 4, and 3. In some non-limiting examples d « may sum to one of nomore than: 15, 12, 10, and 8.
[0267] In some non -limiting examples, the F-con taming moiety may comprise a terminal group according to Chemical Formula (FL-3): yisbere:y to an integer between 1-6.(00268] In some non-limiting examples, Chemical Formula (FL-3) may correspond to a terminal group of at least one of. a fluoroalkyl, and a fluoroalkoxy,£00269] st ha® now been found that linked cyclophosphazene compounds, composing an F-con taining moiety having rminal group, may exhibit at least one propertythat may have applicability In some scerfeiids compared to dther do^rpduhds comprising an F-containing moiety having at least one of: a nal group, andtermmai group.
[0270] In some non -limiting examples, the F-con taming moiety may comprise a fluoroalkoxy moiety, including without limitation,fiuoroalkoxy.100271] In some non-limiting examples, the F-conteining moiety may comprise no more than 15 C atoms..
[0272] In some non-limiting examples, at least one of: a substituted fiuoroalkoxy group, and an unsubstituted fluoroalkoxy group, may be derived by substituting at feast one H atom of an alkoxy group comprising, without limitation, between about: 1 15 C atoms, with a correspond tog number of F atoms. In some non -Ism tong examples, a ftuoroslkoxy may be derived by ataching an ether bridging group to at toast one of the: substituted, and unsubsauted, fluoroalkyl.
[0273] In some non -limiting examples, the F-con taining moiety may comprise a continuous fluorinated chain of C species with no more than 6 fluorinated C atoms, influoroalkyl, a fluoroalkoxy, and a fluoroalkylsiioxy (each of which may be one of: substituted, and unsubstituted), in which no more than 6 fluorinated C atoms form a continuous fluorinated chain. In some non-limiting examples, the F-conteining moiety may comprise a continuous fluorinated chain of C species with one of no more than: 5, 4, and 3, fluorinated C atoms In some non -limiting examples, the F-containing moiety may comprise no more than 6 C atoms.
[0274] In the present disclosure, the term "non -fluorinated moiety”, as used herein, ■may generally refer to s mototy, inciudm-g without fetatian. at toast one of: substituted alkyl unsubstituted alkyl, substituted alkoxy, unsubstituted alkoxy, substituted sifoxy,unsubsftuted sioxy, substituted cydoalkyl, unsubstituted cycloalkyl, substituted aryl, un substituted aryl, substituted heteroaryl, and unsubstituted heteroaryl , that is substantially devoid of F, and In some non-limiting examples, may comprise at least one substituent, including without limitation, comprising additional atoms. In some non-limiting examples, any of: slkyl alkoxy, cycloalkyl aryl, and heteroaryl mav comprise between about 1 -15 C atoms, and slloxy may comprise between about 1-15 Si atoms, hi some non-limiting examples, toe linked cyclophosphazene compound may comprise a non-fluorinated moiety, hi some non -limiting examples, the linked cyclop h os ph azene compound may comprise % R containing moiety and a non-fluorinated moiety.
[0275] In some non -limiting examples, the linked cyclo phosph azene compound may comprise a cyclophasphazene moiety functional group, R, of one of Chemical Formulae (R 1 )4F 494):
[0276] In some non-limitmg examples, at least one C atom of the $ group, including without limitation, any one of Chemical Formulae (F-1) to (F-494), may be substituted by a corresponding number of heteroatom(s), including without limitation, at least one of, O, N;S, and Si.
[0277] Without wishing to be bound by any particular theory, it may be postulated that a patterning material 411 comprising a cyclophosphazeno derivative compound having a CRH term Inal group, may have applicability In some scenarios, compared to phosphazene derivative compounds that comprise a CF3terminal group, In some non- limiting examples, it has been found that the use of such paterning material 411 may provide at least one of: a substantially high deposition contrast: a substantially low propensity for a patterning coating 110 comprising the patterning material 411, to undergo crystallization: and a substantially low propensity for the patterning coating 110 comprising the patterning material 411, to undergo cohesive failure, including without limitation, delammattenL
[0278] In some non-limiting examples, a majority of the plurality of cyclophosphazene moiety to action si groups have an identical chemical structure. In some non-limiting examples, at least one of about: 50, 55, 60, 65, 70, 75, 80, 85, 90, and 95% of the plurality of cyclophosphazene mosety functional groups have an identical chemical stru ctu re I n some non-li m iti n g exa m pies , su bsta ntia II y a 11 of the p lu ral ity of cyclophosptiazeiw rnotety functional groups have so tdwttoel stricter® .{00279] In some non -limiting examples, molecular structures of linked cyclop hasp h azene compound according to Chemical Formula (LPH-1 ) are described inTable tTable 11(00280] In some non -limiting examples, a low surface tension moiety may comprise an Si-containing moiety In some non-limiting examples, the Si-containing moiety may be a siloxa n e-ccnta i n ing g ro u p .
[0281] In some non -limiting examples, at least one of the plurality of cycloph asp hazene moiety functional groups may have a molar mass that may be one of at least about: 50, 80, 1 DO, 200, 300, 400, 430, 480, 530, and 580, g / mol.(00282] In some non -limiting exam pies, at least one of the plurality of cyclophosphazene moiety functional groups may have a molar mass that is one of no more than about: 560, 600, 650, 700, 760, 800, 850, 900, 950, 1,000, and 1,200, g / mol(00283] In some non-imiting examples, a molecular structure of the linked cyclop hosphazene compound may ba represented by Chemical Formula (LPH-2):(LPH-2) where: represents the linker moiety, comprising at least one of: a single bond, C, CH,, an ether, a substituted amine, an un substituted amine, a substituted alkylene, an un substituted alkylene, a substituted tiuoroalkylene, an un substituted fluoroalkylen®, a substituteylene, an unsubstitutedene, a substituted fluoroarylene, an unsubstituted fluoroarylene a substituteeteroarytene, an un substitutederoarylene, a substitutedcycloalkylene, an unsubstituted ycloalkylene, a substituted heteroalkylene, anunsubstituted heteroaikylene, a substituted heterocycloalkylene, an substituted heteracydoalkytens, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety; ndependently represents the cyclophosphazene moiety functional group, each 7? independently comprising at least one of. F, Cl, a hydroxyl group, a substituted dkyi group, an unsubstituted alkyl group, a substituted fluoroalky I group, an unsubstituted tluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted ft uroalkoxy group, an un substituted fluoroalkoxy group, a substituted aryl group, an un substituted aryl group, a substituted ftuoroaryl group, an unsubstituted fluoroaryl group, a substitutedaryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, an amino group, an amine group, an alkylamine group, and an arylamine group: and each is independently at least one of: H, D„ F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloslkyl group, an alkoxy group, a haioaikoxy group, a fiuoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, & flu a many I group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group, 100284] In some non-imiting examples, the linked cyclophosphazene compound may comprise at least one cyclic moiety in its linker moiety. In some non-limiting examples, a molecular structure of the linked cyclophosphazene compound may be represented by one of: Chemical Formulae (LPH-3) and (LPH-4):(LPH-4) where:^represents a cycle moiety, eac independently comprising at least one of: asubstituted arylene, an unsubstituted arylene, a substituted fluoroaryiene, an unsubstituted fluoroarylene, a substituted heferoaryiene, an unsubstituted heteroaryiene, a substituted cycloalkylene, an unsubstituted cycloa Iky leno, a substituted hete racy daa Iky sene, and an unsubstitu ted h ete rocy cl oa Iky len e .M re presents a bridging moiety, comprising at least one of: a single bond, C, CH.an ether, a thioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted aikylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubsti'tuted fluoroalkylene, a substituted arylene, an unsubstituted arylene. a substituted fluoroarylene, an unsubstftuted fiuoroarytene, a substituted heteroaryfene, an unsubstituted heteroarytene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substitutedan un substituted heteroalkylene, a substituted heterocycloa iky lene, and an urn substituted heterocy cloa Iky I ene :each Mis independently at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haiuaryi group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
[0285] 01184 In seme non 4 smiting examples, a molecular structure of the linked cyclophosphazene compound may be represented by one of: Chemical Formulae (LPH-5) and (LPH -6):(LPH45)where: each / ^independently represents an aromatic moiety;As? represents a bridging moiety, comprising at least one of: a single bond, C, CH, ether, ath i aether. a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted iluoroarytene, a substituted heteroarylene, an unsubstituted heteroarylene, a substitutedun substituted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocy doa Iky I ens : each independently comprises at least one of C, F, a CFs moiety, a CRH moiety, moiety, a substituted fluoroaryl group, anun substituted fluoroaryl group, a branched fluoroalkyl group comprising 2-15 C atoms, and an unbranched fluoroalkyl group comprising 2-15 C atoms; and each / Rs independently at least one of: H, 0, F. an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryi group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.£00286] In some non-limiting examples, the aromatic moiety may be substituted by at feast one of: H, D, F, Cl, an alkyl group, an alkenyl group, an alkynyl group, a flwroalkyl group, a fluoromethyl group, a difluoromethyl group, a trifluorometh yl group, a fluoroethyl group, a polyfluoroethyl group, a cycloaikyl group, a flu a racy chalky I group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluorometh oxy group, a trifaoromethoxy group, an aryl group, a hetero&ryl group, a fluoroaryl group, a polyfluoroaryl group, a 4-fluorophenyl group, a 3,4,5-trifluorophenyl group, s 4-(W^oromethoxy)phenyl group, a sulfonyl group, a fluoroalkylsulfenyi group, a trSaoromethy I sulfanyl group, a silyloxy group. a sulfide group, a carbonyl group, a nitro group, a cyano group, a phosphine oxide group, and a diphenyl phosphine-} oxide group.
[0287] In some non limiting examples, the aromatic moiety may be one of: a monocyclic aromatic moiety comprising at least 5 C atoms, a bicyclic aromatic moiety comprising 6-15 C atoms, and a polycyclic aromatic moiety comprising 6-20 C atoms. £00288] to some non-limiting examples, may be represented bywhere x is an integer between 1 -5, y is an integer between 1 -20, and Z is one of: F, and H. £00289] Without wishing to be bound by any particular theory, it may be postulated that a linked eyebphesphazene compound represented by one of: Chemical Formulae (LPH -3) to (LPH-6), may have epplicabslity as at least one of: the patterning coating 1 10 and the patterning material 411 , and, in particular, may have applicability in scenarios that call for a tow initial sticking probability with respect to the deposited material 531, including without limitation, at least one oft a metal, and an alloy, including without limitation, Yb, Ag, Mg , and a Ag»tx>ntaming material, including without limitation, MgAg
[0290] In some non-lmitmg examples, a molecular structure of the hnked cyclophosphazene compound may be represented by Chemical Formula (LPH-7):where: each J% independently represents a phenyl moiety;Z® represents a bridging moiety, comprising at least one of: a single bond, C, CH, an ether, athioether, a disulfide, a subsfttuted amine, an unsubstituted amine, a substituted alkylene, an un substituted alkylene, a substituted fluoroalkylene, an unsubsfltuted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarytene. an unsubstRuted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, anunsubsftuted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocy cloa I ky I ene ; each ndependently comprise at least one of, C, F, amoiety, a CF2H moiety, moiety, a branched fluoroalkyl group comprising 2 to 15 C atoms, and anunbranched fluoroalkyl group comprising 2 to 15 C atoms: and each J s independently at ieu^t one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a hatoaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a suffids group, a sulfonyl group, an alkenyl group, and an alkynyl group.100291] In some non-limiting examples, the phenyl moiety may be substituted by at feast one of: F,yl group , a C -*C? tiuoroalkyl group, a fluoromethyl group, a dffiuarom -ethyl group, a triflu orom ethyl group, a fluoroethyl group, a polyfluoroethyl group, a Cv C? fluoroalkoxy group, a trifluoromethoxy group, a cycloalkyl group, a fluorocycloalkyi group, an alkoxy group, a haioalkoxy group, a fluoroalkoxy group, a dffluoromethoxy group, a trifluoromethoxy group, a sulfonyl group, a fluoroalkylsulfanyl group, a t^aoromethy I sulfanyl group, a silyloxy group, a sulfide group, a carbonyl group, a nitro group, a cyano group, and a phosphine oxide group.
[0292] In some non "limiting examples,ay be represented by( ) ( )S, where x is an integer between 1-5, y is an integer betweenand Z is one of: F, and H,
[0293] In some non-limiting examples, in the linked cycl op hosph azene compound represented by one of: Chemical Formulae (LPH-5). (LPH-6). and (LPH-71 a quotient of: a total number of F atoms in the plu ral ity of cyclo phosphazene moiety functional groups / a total number of C atoms in the plurality of cycle ph os ph azene moiety functional groups, may be one of at least about 1.55, 1.53, 1.62, 1.65, 1.68, 1.70, 1.73, 1.77, and 1.81.
[0294] In some non-limiting examples, a molecular structure of the linked cyclophosphazene compound may be represented by Chemical Formula (LPH-8):(LPH-8) where: each PA Is independently a phenyl moiety;.<te represents a bridging moiety, composing at least one of: a single bond, C, CHa, S, O, a carbonyl, a sulfone, an ether, a thioether,a disulfide, a substituted cyclohexylene, an unsubstituted cyclohexylene, an arylene comprising 6-12 C atoms, and a heteroarylene comprising at feast 4 C atoms; s an integer between 1-5; s an integer between 1 »2C; ands one of; F, and H.
[0295] hi some non-limiting examples, the phenyl moiety may be substituted by st least one of: F, aalkyl group, and ay group.
[0296] In some non -limiting examples, a total number of sp2C atoms in the compound represented by Chemicat Formula (LPH-8) may be at least 7; and a quotient ot: a total number of fluorinated C atoms in the compound / a total number of sp2 C atoms in the compound, may be one of at least about 1, 2, 4, 6, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20.
[0297] Without wishing to be bound by any particular theory, it may be postulated that a linked cyclophosphazene compound represented by Chemical Formula (LPH-8), may have applicability as at feast one of, a patterning coating 110, and a patterning material 411, and, in particular, may have increased applicability in in scenarios calling for a substantially high thermal stability for use in prolonged thermal evaporation process. Cowound comprising a phirafty of linker moieties
[0298] fe same non "limiting examples, the first cydophosph azene moiety and the second cycloph esph azene moiety may be bonded to each other via a plurality of linkermoieties. In some non-limitrsg examples, a molecular structure of the linked cycl op hosph azene compound may be represented by Chemical Formula (LPH4)):(LPH-9) where: / ^ and / ^independently represent: a first linker moiety, and a second linker moiety; R independently represents a cyclop hos ph azene moiety functional group and may comprise, upon eaCh occurrence, at least one of: F. a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalky I group, a substituted heterocycloalkyl group, an unsubstituted heterocy cioalky I group, a substituted alkoxy group, an un substituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted fluoroalkylsiluxy group, an unsubstitutedfluoroalkylsiloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted ftuorocycloalkyi group, an unsubstituted fluorocycloalkyl group, a substituted aryl group, an ursubstituted aryl group, a substituted fteoroaryl group, an unsubstituted >JOroary! group, a substituted fluoroalkylsulfenyl group, an ursubstituted fluoroalkylsulfenyl group, a substituted heteroaryl group, an unsubstituted heteroaryl group, a substituted polyfluorosulfenyl group, and an un substituted polyfluorosulfenyl group; andare each integers between 2-4
[0299] In some non-limiting examples, £4 andmay be one of: the same, and different.
[0300] In some non-hmiting examples, a molecular structure of the hnked cycl op hosph azene compound may be represented by one of Chemical Formulae (LPH-9- 1 M1PH4F7):whs re: each R independently represents at least one of: F, a substituted alkyl group, an unsubsttuted alkyl group, a substituted fluoroaikyl group, an unsubslituted fluoroaikyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted alkoxy group, an un substituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted fluoroalkyisiioxy group, an unsubstituted fluoroalkyisiioxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubsfetuted fluo rocy cloalky I group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstrtuted fluoroaryl group, a substituted fluoroalkylsulfanyl group, an unsubstituted fluoroalkyisuffanyl group, a substituted heteroaiyl group, an ur&uteututeu hater oar yi group, a substituted polyfluorosulfanyl group, and an un substituted polyfluarasulfanyl group; are each 'integers between 2*4;and is at least one of: H; D; F; Cl; an alkyl group, including without limitation, aalkyl group; a cycloalkyl group, including without limitation, a cloalky I group; analkoxy group, including without limitation, a lkoxy group; a fluoroaikyl group, ahaloaryl group; a heteroaryl group; a haloalkoxy group; a fluoroaryl group; a fluoroalkoxy group; a fuarosBylsulfenyi group; a teromsfiyi group; a dlfeoromtby! group; a trfeorom ethyl group; a d 41 uorom ethoxy group; a trifluoromethoxy group; a fluoroethylgroup; a pelyftooroethyl group; a 4-fluorophenyl group; a 3,4,5-trifluorophenyl group; a poiyhuoroaryl group: a 4-(trifiuoromethoxy)phenyl group; and a trifluorometh y feu Hany I group..WeightP&3S1] tn some non lirfmlhg examples, a mcrtor mass of the linked. dyctophas^ndzene compound of the at least one patterning material 411 may be at least about 2,500 g / moL In some non-lim / tfng examples, the molar mass of the compound may be one of at least about: 3,000, 3,700, 4,000, 4,200, and 4,500, g / mol100302] In some non-limiting examples, the molar mass of the linked cyclophosphazene compound of the at least one patterning material 411 may be no more than about 6,000 g / mol. In some non-limiting exampies, the molar mass of the linked cycl ©phosphazene compound may be one of no more than about: 6,000, 5,700 , 5,500, 5,300, and 5,000, g / md.100303] In some non -limiting examples, the molar mass of the linked cyclophosphazene compound of the at least one patterning material 411 may be one of between about: 3.000-6,000, 3,300-5,700, 3,500-5,500, and 4,500-4,900, g / md.100304] Without wishing to be bound by any particular theory, it may be postulated that, In some non -limiting examples, a linked cyclo phosph azene compound having a molar mass which is not substantially high nor substantially low, may have applicability as a paterning material 411 In some scenarios. It may be postulated that, a linked cyclophosphazene compound having a substantially high molar mass, including without limitation, at least about: 3,000 g / mol, may permit the compound to be sublimed without causing thermal degradation of the compound.. In some a non-limiting examples, a linked cyclophosphazene compound having a substantially high molar mass, including withoot limitation, at least about: 3,000 g / mol, may tend to exhibit a high sublimation temperatom, which may be one of: close to, and exceed, a decomposition temperature of such compound. It may be postulated that, a linked cyclophosphazene compound having a substantially low molar mass, Including without limitation, no more than about 3,000 g / mol, may tend to exhibit a substantially tow melting point, which may cause such compound tobe in a liquid or semi-solid form at around normal temperature and pressure, which In some non-fimiting examples, may correspond to a temperature of 20 C and a pressure of 1 atm. Compounds exhibiting substantially low melting points may have substantially reduced suitability for certain applications which call for substantially high temperature stability . In some non-limiting examples, compounds which are In semi-solid, including without limitation, liquid, form at around normal temperature and pressure may have substantially reduced suitability for certain applications In which there is a cal for a material to be in solid form at such conditions.
[0305] In some non -limiting examples, a percentage of the molar weight of such a linked cyclophosphazene compound, including without limitation, of the at feast one patterning materiat 411 , that may be attributable to the F atoms, may be one of between about: 40-90, 45-85, 50-80, 55-75, and 60-70%, In some non-limiting examples, F atoms may constitute a majority of a molar weight of such
[0306] In some non -limiting examples, a percentage of the molar weight of such a linked cyclophosphazene compound, including without limitation, of the at least one patterning material 411 , that may be attributable to the plurality of cyclophosphazene mofety functional groups, may be one of at least about: 30, 40, 50, 60, and 70%.
[0307] In some non -limiting examples, a percentage of the molar weight of such a linked cycfo phosph azene compound, including without limitation, of the al least one paterning material 411, that may be atributable to the plurality of cyclophosphazene mofety functional groups, may be no more than about: 80, 86, and 90%,
[0308] In some non 4i mill ng examples, a percentage of the molar weight of such a linked cyclophosphazene compound, including without limitation, of the at least one paterning material 411 , that may be atributable to the fluorocarbon moieties, may be one of at least about: 50, 60, 65, 70, 75, 80, and 85%. In same non-limiting examples, fluorocarbon moieties may constitute a majority of a molar weight of such compound. In some non-limiting examples, fluorocarbon moieties may be moieties primarily constituting F and C atoms. In some non-limiting examples, such fluorocarbon moieties may include those comprising at least one ofInitjgLSfckj ns.ProbabjIity100309] hi some ncn-limiting examples, an initial sticking probability of the patterning material 411 may be determined by depositing such material as at least one of: a film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 Within 'the devfoe T30, having sbtficier^thickn^s so as fo mrhgate / reduce ariy effects on the degree of inter-molecular interact ton with the underlying layer 710 upon deposition on a surface thereof In some non-limiting examples, the initial sticking probability may be measured on a film / coating having a thickness of one of at least about 20, 25, 30, 50, 60, and 100, nm.
[0310] In some non -limiting examples, at least one of: the patterning coating 110, and the patterning material 411, In some non-limiting examples, when deposited as at feast one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of the deposited material 531 , that is one of no more than about: 0.3, 0,2, 0.15, 0.1 , 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001 , 0.0008, 0.0005, 0.0003, and 0.0001.
[0311] In some non-limiting examples, at least one of: the patterning coating 110, and ths patterning material 411 , In some non -limiting examples, when deposited as at feast one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of at least one of: Ag> and Mg that is one of no more than about 0.3, 0.2, 0.15. 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0081.
[0312] In seme non-hmhmg examples, at feast one of: the patterning coating 110, and the patterning material 411 , In some non -limiting examples, when deposited as at feast one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may haw an in I tie I sticking probability against the deposition of a deposited material 531 of one of between about: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005,0.03-0.0008, 0.03-0.001 , 0 03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001 , 0.02-0.0003, 0.02-0.0005, 0.02-0.0008, 0 02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001 , 0.008-0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005- 0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.
[0313] In some non-limiting examples, at least one of: the paterning coating 110, and the patterning material 411, In some non-limiting examples, when deposited as atfeast one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability1against the deposition of a plurality of deposited materials 531 that is no more than a threshold value. In some non-limitteg examples, such threshold value may be one of about: 0.3, 0 2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, and 0.001.
[0314] In some non -Smiting examples, at least one of: the paterning coating 110, and the patterning material 411 , In some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability that is no more than such threshold value a gate st the deposition of a plurality of deposited materials 531 selected from at least one of: Ag, Mg, Yb, cadmium (Cd), and zinc (Zh), In some non-limiting examples, the patterning coating 110 may exhibit an initial sticking probabibty ot ne more than such threshold vtelti® against the deptssition of a piurafhy of deposited materials 531 selected from at least one of: Ag, Mg, and Yb.
[0315] In some non-iimitteg examples, at least one of: the paterning coating 110, and the patterning material 411, In some non-limiting examples, when deposited as at feast one of: a film, and a coating, in a form, and under similar d rcum stances to the deposition of the paterning coating 110 within the device 100, may exhibit an initial sticking probability against tee deposition of a first deposited material 531 of, including without limitation, below, a first threshold value, and an initial sticking probability against the deposition of a second deposited material 53 i of, including without limitation, below, a second threshold value. In some non-limiting examples, the first deposited material 531 may be Ag, and thesecond deposited material 531 may be Mg. In some non-limiting examples, the first deposited material 531 may be Ag, and the second deposited material may be Yb, In some non-limithg examples, the first deposited material 531 may be Yb, and the second deposited material 531 may be Mg. In some non -limiting examples, the first threshold value mav exceed the second threshold value .
[0316] In some non -limiting examples, there may be scenarios calling for providing a patterning coating 110 for causing formation of a discontinuous layer 160 of at least one particle structure 150, upon the paterning coating 110 being subjected to a vapor flux 532 of a deposited material 531. In some non -limiting examples, the patterning coating 110 may exhibit a substantially low initial sticking probability such that a closed coating 140 of the deposited material 531 may be formed in the second portion 102, which may be substantially devoid of the paterning coating 110, while the discontinuous layer 160 of at toast one parttete1-50 havtog at least one -characteristic may-be formed fo the first portion 101 on the patterning coating 110. In some non -limiting examples, there may be scenarios calling for formation of a discontinuous layer 160 of at least one particle structure 150 of a deposited material 531 , which may be, In some non-fiimiting examples, of one of: a metal, and a metal alloy, in the first portion 101, while depositing, in the second portion 102, a closed coating 140 of the deposited material 531 having a thickness of, for example, one of no more than about 100, 50, 25, and 15, nm. In some non -limiting examples, an amount of the deposited material 531 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of between about: 1-SOs 2-25, 5-20, and 7-10% of the amount of the deposited material 531 deposited as a dosed coating 140 to the second portion 102, which In some non-limiting exampies may correspond to a thickness of one of no more than about: 100, 75, 50, 25, end 15, nm.
[0317] to some non-limiting examples, there may be a positive correlation between the initial sticking probability of at least one of: the patterning coating 110, and the paterning material 411, In some non-limiting examples, when deposited as at least one of: a film, and a coating, In a form, and under circumstances similar to the deposition of the patterning costing 110 within WAmaterial 531, and an average layer thickness of the deposited material 531 thereon.100318] hi some non-limiting examples, at least one of: the patterning coating 110, and the patterning material 411, In some non “limiting examples, when deposited as atleast, one of: a film, and a coating, in a form, and under circumstances similar to the deposition ofradiation of at least a threshold transmittance value, after being subjected to a vapor flux 532 of the deposited material 5315including without limitation, Ag.
[0319] In some non-limiting examples, such transmittance may be measured alter exposing the exposed layer surface 11 of at least one of: the patterning coating 110 and the patterning material 411, formed as a thin film, to a vapor flux 532 of the deposited material S31 , including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag -containing material, including without limitation, MgAg, under typical conditions that may be used for depositing an electrode of an opto -electronic device 200, which In some non-limiting examples, may be a cathode of an organic light-emitting diode (OLED) device 200.
[0320] In some non -limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 532 of the deposited material 531 , including without limitation, at least one at: a metal , and an alloy, including without limitation at least one of: Yb, Ag, Mg, end a Ag-containing material, Including without limitation, MgAg, may comprise: maintaining a vacuum pressure at a reference pressure, including without limitation, of one of about orn the vapor flux 532 of the depositedmaterial 531 , including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, inducting without limitation, MgAg, being substantially consistent with a reference deposition rate, including without limitation, of about 1 angstrom (A) / sec, which In some non-limiting examples, may be monitored using a QCM, the vapor flux 532 of the deposited material 531 being directed toward the exposed layer surface 11 at an angle that Is substantially close to normal to a plane of the exposed layer surface 11; the exposed layer surface 11 being subjected io the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of:YU Ag, Mg, and a Ag-containing material including without limitation, MgAg, until a reference average layer thickness, including without limitation, of about 15 nm, is reached, and upon such reference average layer thickness being attained, lhe exposed layer surface 11 not being further subjected to the vapor flux of the deposited material 531, including without imitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg.100321] In some non “limiting examples, the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531 , including without limitation, at least one of: Yb, A§, Mg, and a Ag-conteining material, including without limitation, MgAg, may be substantially at room temperature (e.g, about 25*0). In some non-limiting examples, the exposed layer surface 11 beingto the vapor flux 532 of the deposited materia!531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containmg «wterial including without limitation, MgAg, may be positioned about 65 cm away from an evaporation source by which the deposited material 531 , including without limitation, at least one of: a metal, and an alloy, Including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg, is evaporated.(00322] In some non -limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum , which may be one of at least about: 450, 500, 550, and 600, nm. In some non-limiting examples, the threshold transmitance value ■may be measures at a wavelength m at feast one of the apectrurn, m somenon -limiting axsmpfes, the threshold transmitance value may be measured at a wavelength of on® of about: 700, 900, and 1,000, nm. In some non-limiting examples, the threshold transmittance veins may be expressed as a percentage ef incident EM power that may be transmited through a sample In seme non -limiting examples, the threshold transmittance value may be one of at least about: 60, 65, 70, 75, 80, 85, and 90%.(00323] It would be appreciated by a person having ordinary skill in the relevant art that high transmittance may generally indicate an absence of a closed coating 140 of the .deposited material 531 , includingcontaining material including without limitation, MgAg. On the other hand, lowtransmittance may generally indicate presence of a closed coating 140 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-coniaining material, including without limitation, MgAg, since metallic thin films, particularly when formed as a dosed coating 140, may exhibit a high degree of absorption of EM radiation.|W324] A sends of samples fetes fabricated to measure -the transfottence of an example material, as well as to visually observe whether a closed coating 140 of Ag was formed on the exposed layer surface 11 of such example material. Each sample was prepared by depositing, on a glass substrate 10. an approximately 50 nm thick coating of an example material, then subjecting the exposed layer surface 11 of the coating to a vapor flux 532 of Ag at a rate of ebout 1 A / sec until a reference layer thickness of about 15 nm was reach ed,
[0325] The molecular structures of the example materials used in the samples herein are set out in'Tabie 2 below:Table 2
[0326] Those having ordinary skill in the relevant art will appreciate that samples having little to no deposited material 531 , including without limitation, at least one of. a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag- containing material including without limitation, MgAg, present thereon may be substantially transparent, while samples with substantial amounts of at least one of: a metal, and an alloy, deposited thereon, including without limitation, as a closed coating 140, may In some non -limiting examples, exhibit a substantially reduced transmittance* Accordingly, the performance of various example coatings as a patterning coating 110 may be assessed by measuring transmission through the samples, which may be inversely correlated to at least one of: an amount, and an average layer thickness, of the deposited material 531 , including without limitation, at least one of: a metal, and an alloy. Including without limitation, in the form of at least one of Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg, being deposited thereon, since metallic thin films,including without limitation, when formed as a closed coating 140, may exhibit a high degree of absorption of EM radiation,
[0327] Specifically, to compare the performance of a paterning coating 110 comprising various example materials, the following experiments were conducted,Exggnnwt..l
[0328] A series of samples were fabricated by depositing, rn vacuo, an approximately 30 nm thick layer of a nucleation modifying materia I over a glass substrate 10. The nucleation modifying material was varied between the samples. For each sample, the exposed layer surface 11 of the nucleation modifying coating formed thereby wae then subjected to an open mask deposition of a deposited material 531 , comprising YbiLiF (1 : 1 (vol:voi)X at a rate of about 1 A / sec, until a reference thickness of about 1.5 nm was achieved, followed by MgAg (Mg'Ag ™ 1:9 (vol: vol)) until a reference thickness of about 15 nm was achieved Once the samples were fabricated, EM transmittance measurements were taken to determine a relative amount of the deposited material deposited on th a exposed layer surface 11 of the patterning coating 110. Those having ordinary skill in the relevant art wifi appreciate that samples having little to no metal present thereon may be substantially transparent, white samples with metal deposited thereon, particularly as a closed coating, may generally exhibit a substanOally lower light transmittance.
[0329] The transmittance at wavelengths of 450, 520, and 850 , nm after each sample was subjected to a vapor flux 532 of Yb:LIF and MgAg was measured and summarized in Table 3.Table 3 §>| EM^2. | . 71-80% . ! . 81 -90% . | . 91-100% .: . .1. i . I .£00330] As may be seen from the results above, In some non-limiting examples, a transmitance of a patterning coating 110 formed by EM-23 was found to be substantially similar to that of EM-11 at wavelengths of at least one of about: 450, 520, and 850. nm, and a transmittance of a paterning coating 110 formed by one of: EM-20, EM-21, EM-22, EM- 25, EM-26, EM-27, EM-28, EM-44, EM-46 to EM-55, and EM-57 to EM-62, were found to be at least that of EM-11 at wavelengths of at least one of about: 450, 520, and 850, ran. In some non -limiting examples, It has been found that these samples exhibited substantially increased transmittance at a wavelength of about 850 nm compared to a transmittance at a wavelength of about 450 nm. Without wishing to be bound by any particular theory, it may be postulated that a nucleation modifying material composing a first cyclo phosph azene moiety and a second cyclophosphazene moiety may have applicability in at least some scenarios calling for a substantially high transmittance
[0331] Reductions in EM transmittance at wavelengths of 450, 520, and 850, nm after each sample was subjected to the vapor flux 532 of Yb:LIF and MgAg were summarized in Table 4 The reductions in EM transmittance were determined bymeasuring EM transmission through each sample and comparing the transmitance to a reference sample in which no exposure to vapor flux 532 of Yb:LiF and MgAg occurred.Tabfe 4
[0332] As may be seen from the results In Tables 3 and 4, it has now been found that. In some non-limiting examples, a nucleation modifying material comprising a firstto the first cyclophosphazene moiety and the second cyclophosphazene moiety, mayexhibit different EM transmittance characteristics. In some non-limiting examples, nucleation modifying materials asm prising a first cyclophosphazene moiety, a second cyclophosphazene moiety, and a linker moiety bonded to the first cyclophosphazene moiety and the second cyclo phosphazene moiety, including without limitation, EM-20 to EM-28, EM-44, EM-46 to EM 55 and EM-57 to EM-62, mav exhibit EM transmittance characteristics that are at least that of a nucleation modifying material that is substantially devoid of at least one of: a first cyclophosphazene moiety, a second cyclo phosphazene moiety, and a linker moiety, including without limitation, EM-11. In some non -limiting examples, all example materials tested exhibit a substantially low transmittance reduction of no more than about 5% at an NIR wavelength of 850 nm, which suggests that they may have applicability to scenarios calling for substantially high transmittance in an NIR wavelength range, including without limitation, 700-2500 nm. In some non-limiting examples, a nucleation modifying material that exhibits a substantially tow transmittance reduction at a visible wavelength of, including without I imitation, at least one of: 450 and 520 nm, may have applicability in scenarios calling for substantially high transmittance in a visible wavelength range. In some non-limiting examples, the transmittance reductions of EM-52-EM-62 were found to be substantially low when, In some non-limiting examples, compared with EM-11 , in the visible wavelength range. In some non-limiting examples, EM-22, EM-27, EM-47, EM-48, EM-50, EM-51, EM-52, EM-53, EM-54, EM-58, EM-59, and EM-61 , which each exhibits a substantially low transmittance reduction of no more than about 5% at a wavelength of 520 nm, may have applicability In some scenarios calling for a substantially low transmittance reduction at such wavelength compared, In some non- limiting examples, to EM-11, EM-20, EM-21, EM-23, EM-25, EM-26, EM-28, EM-44, EM- 46, EM-49, EM-55, EM-57, and EM-60, which each exhibits a transmittance reduction of at least about 5% at 520 nm. In some non-limiting examples, EM-22, EM-44, EM-47, EM-50, EM-51 , EM -52, EM -53, EM-54, EM -58, EM-59, and EM-61 , which each exhibits a substantially low transmittance reduction of no more than about 10% at a wavelength of450 nm, may have apphcabiKty In some scenarios calling for a substantially low transmittance reduction al such wavelength compared, In some non-limiting examples, to EM-11, EM-20, EM-21, EM-23, EM-25, EM-26, EM-27, EM-28, EM-46, EM-49, EM-55, EM- 57, EM-60, and EM-62, which each exhibits a transmitance reduction of at least about 10%at 450 nm.. In some non-limiting examples, EM-22, EM-51 , EM-53, EM-54, EM-58, and EM-61 may have applicability in scenarios calling for a substantially low transmitance reduction in both the visible end NIR wavelengths.vacuo, an approximately 30 nm thick coating of a nucleation modifying material on a glass substrate 10, Those having ordinary skill in the relevant art will appreciate that example materials that exhibit a substantially high light transmittance in the UV-Vis range indicate substantially low absorbance of UV-Vis radiation.{00334] The transmitance through each sample at 350, 600, and 700, nm were measured. The results are summarized in Table 5 below:Table d
[0335] As may be seen from the results in Table 5, in seme non-limiting examples, nucleation modifying materials comprising a first cyclophosphazena moiety, a second cyclophosphazene moiety, and a inker moiety bonded to the first cyclophasphazene moiety and the seco ad cycle phosphazene moiety, may exhibit substantially no absorption of light in a wavelength range of at least one of: the UV spectrum, and the visible spectrum.Synthesis ExamplesSynthesis of EM-11
[0336] In a 2.0 L round bottom flask equipped with a stirring bar, 12.8 g of NaOH was placed m 20 ml. of defenfewd (DI) water end suspentfed in 560 ml of tctene.. 145.1 g of 1H,1H,9H-hexadecai1uaro-1 -nonanal was added, and th© suspension was heated at 95°C for a tote I of 4 hours under a continuous nitrogen gas (Ns) flow A solid crashed out during this period.
[0337] The temperature was adjusted to 85“ C and a water condenser was attached to the flask under a Na atmosphere. 13.92 g of hexach I orocyclotn phosphazene, dissolved under N:> in 100 mL of dry tetra hydrofuran (THF), was added to the reaction mixture via cannula. The reaction mixture was stirred at 85 °C for 2 hours, then at room temperature for 48. bsurs.
[0338] 'The reaction was quenched by adding 200 mL of water, and filtered via vacuum filtration in a filter funnel (pore diameter: ~ 10-20 pm). The collected solid was washed with water (3x1 L), isopropyl alcohol (1L), and dichloromethane (DCM, 11). 95.2 g of white solid was collected, which was identified to be sample EM-11 Sample EM-11 was further purified by vacuum sublimation.
[0339] Sample EM-20 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction intermediates; IM-11 -OH and IM-1 1 -Cl, as outlined in th e scheme below: / . Forma tion of IM- 11 - OH
[0340] 50 g of EM-11 was dissolved m 250 mL of acetone to a 1.0 L round bottom flask equipped with a stirring bar and a water condenser. 25 ml of DI water was then added to the flask to obtain a clear solution. Ths reaction mixture was heated at 8G 'C, then NaOH was added The reaction mixture was continuously stirred for 48 hours, after which 300 mL of water was added to the reaction mature. A rotary evaporator was used to remove acetone from the mixture, The mixture was then ecidified with cone. HCI and stirred for 2 hours. A brown solid was obtained by filtering the mixture with a Buchner funnel. The solid was washed with acetona / DCM (1;1, 3x100mU100mLX then dried to obtain IM -11 -OH,& Formal of / M- 11 -Cl
[0341] 26 g of iM-11-OH suspended in 200 mL of toluene was placed in a 1.0 L round bottom flask equipped with a stirring bar and a water condenser. 10 mL of SOCh was added and 50 pl of N,N-Dimethylformamide (DMF) was slowly added to the round bottom flask. The suspension was then heated at 110°C and stirred for 18 hours. The product obtained upon evaporating the solvent was IM-11-CI (2»chtero“2!4b4,.6,6- pentakis((2,2,3,3,4,4,5,5,6,677.8,8,9,9-hexadecafluorononyl)oxy)-2AMX8,6As- triazatri phosphone) . / / / . Fofmaton ofEJW-20
[0342] A 150 mL round-bottom flask was dried in an oven overnight at 11 OX and cooled to room temperature under a continuous argon (Ar) flow. Under a static Ar atmosphere, a stirring bar, acetonitrile (anhydrous, 250 ml, added via a plastic syringe with an oven-dried 12’ needle), hydroquinone (946.0 mg, 8.6 mmol, 0.5 equiv.) and IM-11 Ci (40.0 g, 17,2 mmol, 1 .0 equiv.) were added to the round-bottom flask to form a suspension. Ths round -bottom flask was seated with a septum, placed into an oil bath (60°C), and ths suspension was stirred for 5 minutes at 6 (FC under Ar. The septum was briefly removed from the flask to introduce KzCOs (anhydrous, 2 8 g, 18.9 mmol, 1.1 equiv.). The suspension was stirred under Ar overnight at BOX and the reaction was monitored by NMR. After the reaction was completed, the suspension was filtered through a filter frit, then the filter frit was washed with acetone (2 x 200 mL). The filtrate and the washing were combined, then the solvent was removed under a reduced pressure to afford an oil The oil was triturated in a T.1 (vol / vol) mixture of 2-propanol (250 mL) and DCM (250 mL) overnight at room temperature to form a suspension. The next day, the suspension was Altered through a filter -frit. The solid obtained was washed with DCM (2 x 200 mL) and allowed to air dry, affording a white solid Yield’ 23.5 g. 58% The solid was further purified by sublimation.Synthesis of EM-21
[0344] Sample EM-21 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction intermediates IM-11 -OH and IM-11X1, as outlined in the scheme below:
[0345] IM-11 -OH and IM-11 -Cl were synthesized according to the procedures described above.
[0346] A 200 mL round -bottom flask was dned in an oven overnight at 110*0 and cooled to room temperature under a continuous Ar flow. Under a static Ar atmosphere, a stlmng ban THF (anhydrous, 40 mL, added via a plastic syringe with an oven-dried 12’ needle), and IM-11-CI (5.0 g, 2.2 mmol, 1.0 equiv.) were added to the round -bottom flask. After cooling the flask to 0°C with an ice bath and stirring the mixture for S minutes, NaH (60%, 95.0 mg, 2.4 mmol, 1 1 Equiv.) was added through the neck of the flask, and the mixture was stirred for another 30 minutes. The flask was then fitted with an oven-dried reflux condenser which was separately cooled under Ar The reflux condenser was briefly removed and IM- 11 -Cl (5.0 g, 2.2 mmol 1 .0 equiv.) was introduced. The condenser was put back on and the reaction was refluxed at 70sC under Ar for 1 week. After 1 week, a yellow milky solution obtained was filtered through a filter frit to obtain a pale-yellow solid, which was then washed with 10% MeOH in water (2 x 100 ml), 10 % MeOH in DCM (1 x 100 mL) and DCM (1 x 100 mL). The white solid obtained was dried overnight in a high- powered vacuum, allowing product to be isolated as a white powder. Yield: 8.5 g, 86%. The solid was further purified by sublimation.
[0348] Sample EM-22 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction intermediates: IM-11 -OH and IM-11-CI, as outlined in the scheme below:
[0349] IM-11 -OH and IM-11-CI were synthesized according to the procedures described above.
[0350] A 150 mL round -bottom flask was dried in an oven overnight at 110°C and cooled to room temperature under a eonimucxjs Ar flow. Under a static Ar atmosphere, a stirring bar. acetonitrile (anhydrous, 38 mL, added via a plastic syringe with an oven -dried 12sneedle), 2,3-dimethylhydroquinone (150.0 mg, 1 .1 mmol 0.5 equiv. ) and IM-11-CI (5.0 g, 2.2 mmol, 1.0 equiv,) were added to the round-bottom flask to farm a suspension. The flask was sealed with a septum, placed into an oil bath (SCTC), and the orange suspension was stirred for 5 minutes at 80 °C under Ar. The septum was briefly removed from the flask to introduce K2CO3 (anhydrous, 326.0 mg, 2.4 mmol, 1.1 equiv.). The suspension was stirred under Ar overnight at 60°C. The next day, the suspension was filtered through a filter frit, then the filter frit was washed with acetone (3 x 25 mL). The filtrate and the washing were combined, then the solvent was removed under a reduced pressure to afford an orenge oil The orange oil was triturated in 2-prepanoi (40 mL) and DCM (80 mL) overnight at roam temperature. The next day, the orange suspension was filtered through a fiftdr frit, me white solid obtsiudd was washed with a 2:1 (vol / vdl) solution of DCM:2-propanol (2 x 50 mL) and DCM (2 x 50 mL) and allowed to air dry, affording a white solid Yield: 1 .2 g, 24%, The solid was farther purified by sublimation.Syntheses of EM-23
[0352] Sample EM-23 was synthesized tram sample EM-11 via a Ihree-step process invoking the formation of two reaction intemredtetes: IM-11 -OH and IM41-CI, as outlined in the scheme below:
[0353] iM-11 -OH and IM-11 -Cl were synthesized according to the procedures described ebeve.
[0354] A 15C mL round -bottom flask was dned in an oven overnight at 110cC and cooled to room temperature under a continuous Ar flow. Under a static Ar atmosphere, a stirring bar, acetonitrile (anhydrous, 35 mL, added via a plastic syringe with an oven -dried 12’ needle), tetrafluorohydroquinone (195,7 mg, 1,1 mmol, 0.5 equiv.), IM-11 -Cl (5.0 g, 2.2 mmol, 1.0 equiv.), and K2CO3 (anhydrous, 331.0 mg, 2.4 mmol, 1.1 equiv.) were added to the round- bottom flask. The suspension in the flask was stirred under Ar overnight at room temperature. The next day, the suspension was filtered through a filter frit, then the fi Iter fritwas washed with acetone (2 x 100 mL). The filtrate and the washings were combined, then the solvent was removed under a reduced pressure to afford a solid. The solid was triturated in a 1 :2 (vol / vol) mixture of 2-propanol (100 mL) and DCM (200 ml) for 1 hour at room temperature to form a suspension.: which was then filtered through a filter frit The solid obtained was washed with DCM (2 x 100 mL) and allowed to air drv, affording a solid. Yield: 2.7 g, 53%. Th a solid was further purified by sublimation.Synthesis of EM -24
[0356] Sample EM-24 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction intermediates: IM-11 -OH and IM-11-CI, as outlined in the scheme below:
[0357] IM-11 -OH and IM-11-CI were synthesized according to the procedures described above.
[0358] A 150 mL round-botom flask was dried in the oven overnight at 110’C and cooled to room temperature under a continuous Ar flow. Under a static Ar atmosphere, astirring bar, acetonitrile (anhydrous, 38 mL. added via plastic syringe with an oven-dried 12’ needle), 2,5-dibromohydroquinone (2280 mg. 1.1 mmol, 0.5 equiv.), and IM-11 -Cl (5.0 g, 2.2 mmol 1.0 equiv.) were added to the round -ben mm flask to form a red -brown suspension. The round -bottom flask was placed into an oil bath (60 X) and the suspension was stirred for 5 minutes at BOX under Ar. The septum was briefly removed from the flask to introduce K2CO3 (anhydrous, 326,0 mg, 2.4 mmol, 1,1 equiv.). Ths suspension was stto-ed under Ar overnight at 60X. The next day, the suspension was filtered through a medium porous filter plate, then the filter plate was washed with acetone (3 x 15 mL). The filtrate and the washings were combined, then the solvent was removed under a reduced pressure to afford an oil The oil was triturated in 2-propanol (50 ml) overnight at room temperature. The next day, the suspension was filtered through a filter frit. The white solid obtained was washed with 2-propanoi (2 x 15 mL) and DOM (2 x 15 ml), then allowed to air dry to afford a white solid. Yield: 1.5 g, 25%. The solid was further purified by sublimation.(C^H3sF^Br^NeOuP^ H): 4844.6.SyntheS is af E M -25
[0360] Sample EM-25 was synthesized from sample EM-11 via a three-step process involving toe formation of two reaction informed fetes : IM-11 -OH and IM-11 -Cl, as outlined in the scheme below:
[0361] IM-11 -OH and IM-11 -Ci were synthesized according to the procedures us scdb^o ebove .
[0362] A 150 mL round -bottom flask was dried in the oven overnight st 11 OX and cooled to room temperature under a continuous Ar flow. Under a static Ar atmosphere, a stirring bar, acetonitrile (anhydrous, 38 mL, added via a plastic syringe with an oven-dried 12’ needle), 2,5-dichloroquinone (192.0 mg, 1,1 mmol, 0.5 equiv ), and IM- 11 -Cl (5.0 g, 2 2 mmol, 1.0 equiv.) were added to the round-bottom flask to form a yellow suspension. The round -botom flask was sealed with a septum, placed into an oil bath (6O“ C), and the suspension was stirred for 5 minutes at 60°C. The septum was bnefly removed from the flask to introduce K2CO3 (anhydrous, 327,0 mg, 2.4 mmol, 1.1 equiv.). The suspension was stirred under Ar overnight at 60“C. The next day, the suspension was filtered through a filter frit, then the filter frit was washed with acetone (2 x 50 mL). The filtrate and the washings were combined, then the solvent was removed under a reduced pressure to afford a restow. The residue was triturated in 2-propanol (50 mL) for 1 hour at room temperature, then filtered through a filter frit The solid obtained was first washed with 2- propanol (2 x 50 mL) and DCM (2 x 50 mL), then triturated in a 1 :2 (voi / vol) mixture of 2- propanol (10 mL) and acetone (20 mL), and finally filtered through a filter frit and washed with acetone (2 x 10 mL). The filtrate and the washings were reduced to around 10 ml under a reduced pressure, followed by the addition of DCM (10 ml) to afford a mixture. The mixture was filtered through a filter frit, rhe solid separated was washed with DCM (2 x 20ml) and dried under high vacuum for 2 hours to produce an off-white solid product. Yield:1.5 g, 30%. The solid was further purified by sublimation.
[0364] Sample EM-26 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction intermediates: IM-11 -OH and IM-11-CI, as outlined in ths scheme below
[0365] I M ■ 11 -OH a ad I M -11 -Cl we re syn th es ized a cco rd ing to th e proced u res described above.
[0366] A 150 mL round -bottom flask was dned in the oven overnight at 11 OX and cooled to room temperature under a continuous Ar flow, Under a static Ar atmosphere, a stirring bar, acetonitrile (anhydrous, 38 mL. added via a plastic syringe with an oven-dried 12’ needle), resorcinol (118.0 mg, 1.1 mmol, 0.5 equiv.), and IM-11 -Cl (5.0 g, 2.2 mmol, 1 ,0 equiv.) were added to the round -bottom flask to form a suspension . The round -botom flask was sealed with a septum, placed into an oil bath (60 ”0), and the suspension wasstirred for 5 minutes at 60aC under Ar The septum was briefly removed from the flask to introduce K^COa (anhydrous, 3270 mg, 2.4 mmol, 1 1 equiv.). The suspension was stirred under Ar ovemght at 60”C. The next day. the suspension was filtered through a filter frit, then the frit was washed with acetone (2 x 100 mL). The filtrate and the washings were combined, and the solvent was removed under a reduced pressure to vlefd a residue. The residue was triturated in 2-propanol (100 mL)for 1 hour at room temperature, then filtered through a filter frit. The solid obtained was washed with 2-propanol (2 x 50 mL) and DCM (2 x 50 ml), then allowed to air dry to affording the product a white solid. Yield: 1.9 g, 38%. The white sohd was further purified by summation.Synthesis of EM -27
[0368] Sample EM-27 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction Intermediates: IM-11 -OH and IM-11-CL, as outlined in the scheme below:100369] IM-11 -OH and IM-11-CI were synthesized according to the procedures described above,£00370] A 150 mL round -bottom flask was dried in the oven overnight at 110X. cooled to room temperature under a continuous Ar low, Under a static Ar atmosphere, a stfofrfg bar, aceton strife (Mihyfetous, S8 mL, aetfed via a pfeshc syringe With an O vers toiled 12* needle), catechol (118,0 mg, 1.1 mmol, 0.5 equiv.), and IM-11-CI (5.0 g, 2.2 mmol, 1.0 equiv.) wars to the round -bottom flask to form a yellow suspension. Th® round- bottom flask was sealed with a septum, placed into an oil bath (60 °C), and the yellow suspension was stirred for 5 minutes at 60 ’C . The septum was briefly removed to introduce KzCCh (anhydrous, 327.0 mg, 2,4 mmol, 1 .1 equiv.). The suspension was stirred under Ar overnight at 60' C. The next day the suspension was filtered through a filter frit, then the filter frit was washed with acetone (2 x 100 ml). The filtrate and the washings mo combmed,, then the solvent was removed under a reduced pressure. The residue was triturated in 2-propanoi (20 mL) for 1 hour at room temperature. The mixture obtained was filtered through a filter M. The sohd obtained was washed with 1:1 (voi / vol) DCM:2- propanol (2 x 20 mL) and DCM (2 x 20 mL), then allowed to air dry, affording an ott-white solid. Yield 1.6 g, 32%. The solid was further purified by sublimation.Synth os is of EM-28
[0372] Sample EM 28 was synthesized from sample EM-11 via a three-step process involving the formation of two reaction intermediates: IM-11 -OH and IM-11-CI, as outlined in the scheme below:
[0373] IM-11 -OH and IM-11-CI were synthesized according to the procedures described 9 bove .
[0374] b a 500 ml round-bottom fiask equipped with a stirring bar and placed underAr, 1 ,4-rihydroxynaphthalene (0.664.12 mmol, 1 .0 equiv.) and I MH -Cl (10 g, 4.4 mmol, 1.0 equiv.) were added. Then, anhydrous acetonitrile (120 ml) was added using a metal syringe under Ar. The mixture was heated at 603C , then K2CO3 (1.2 g, 8.6 mmol, 2.0 equiv.) was added to the reaction mixture 'The reaction mixture was heated at BOX overnight under Ar. Approximately 300 ml_ of water was added to the reaction mixture, then the mixture was Filtered. Th® solid collected was washed with water, IP A followed by DCM to obtain ths productDeposition Contrast
[0375] In some non-limiting examples, e material, including without limitation, a paterning matertel411, that may function as an NIC for a given at least one of: a metal, and an alloy, including without limitation, at least one of Mg, Ag, and MgAg, may have a substantially high deposition contrast when deposited on a substrate 10.
[0376] In some non-limiting examples, rf a substrate 10 tends to act as a nucleation- promoting coating (NPC) 720, and a portion thereof is coated with a material, including without limitation, a patterning material 411, that may tend to function as an NIC against deposition of a deposited material 531 . including without limitation, at least one of: a meU and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-contarningmaterial, including without limitation, MgAg, a coated portion (first portion 101) and an uncoated portion (second portion 102) may tend to have different at least one of: initial sticking probabilities, and nucleation rates, such that the deposited material 531 deposited thereon may tend to have different average Him thicknesses.
[89377] As used herein, a gubtieht df an average Him thickness ot tne deposited material 531 deposited in the second portion 102 divided by the average film thickness of the deposited material in the first portion 101 in such scenario may be generally referred to as a deposition contrast Thus, if the deposition contrast is substantially high, the average film thickness of the deposited material 531 in the second portion 102 may be substan dally greater than the average film thickness of the deposited mate n al 531 in the first portion 101.
[0378] In some non -limiting examples, a material, including without limitation, a patterning material 411, that may function as an NiG for a given deposited material 531 , may have a substantially high deposition contrast when deposited on a substrate 10,100379] In some non-limiting examples, there may be a negative correlation between the initial sticking probability of at least one of the paterning coating 110, and the paterning material 411 , In some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, against the deposition of the deposited material 531 and a deposition contrast thereof, that is, a low initial sticking probability may be highly correlated with a high deposition contrast
[0380] In some non-limiting examples, if the deposition contrast is substantially high, there may be little to no deposited material 531 deposited in the first portion 101, when there is sufficient deposition of the deposited material 531 to form a dosed coating 140 thereof in the second portion 102.
[0381] In some non -limiting examples, if the deposition contrast is substantially low, there may be a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531 deposited in the first portion 101 when there is sufficient deposition of the deposited material 531 to form a closed coating 140 in the second portion 102.100382] In some non-limiting examples, there may be scenarios calling for the formation of a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531, in the first portion 101 , when an average layer thickness of a dosed coating 140 of the deposited material 531 in the second portion 102 is substantially small, including without limitation, one of no more than about: 100, 50, 25, and 15, nm. including without limitation, the formation of nanoparticles (NPs) in the first portion 101 , where absorption of EM radiation by such NPs is called for, including without limitation, to protect an underlying layer 710 from EM radiation having a wavelength of no more than about 460 nm.
[0383] In some non -limiting examples, in such scenarios, there may be applicability for a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15.
[0384] In some non-limiting examples, a material, including without limitation, a paterning material 411 , having a substantially low deposition contrast against deposition of a deposited material 531 , may have reduced applicability In some scenarios calling for substantially high deposition contrast, including without limitation, where the average layer thickness of the deposited material 531 in the first portion 101 is large, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.
[0385] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially tow deposition contrast against deposition of a deposited material 531 , may have reduced applicability In some scenarios calling for substantially high deposition contrast, Including without limitation, scenarios calling for at least one of: ths substantial absence of a closed coating 140, and a high density of, particle structures 150 in the first portion 101, including without limitation, when an average layer thickness of the deposited material 531 in the second portion 102 Is large, Including without limitation, ©ns of at least about: 95, 45, 20, 10, and 8, nm, including without limitation, in some scenarios calling for the substantial absence of absorption of EM radiation in at least one of the visible spectre m and foe NIR spectrum, including without limitation, scenarios calling for an increased transparency to EM radiation having a wavelength that is at feast about 460 nm.{00386] In som© non-limiting examples, a material, including without limitation, a paterning material 411, having a substantially low deposition contrast against the deposition of a deposited material 531 , may have applicability In some scenarios calling for at least one of: a discontinuous layer 180 of, and a Sow density of, part cl e structures ISO of the deposited material 531 in the first portion 101. when an average layer thickness of a closed coating 140 of the deposited material 531 in the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm. In some non-limiting a deposition contrast of one of between about 2-100, 4»50, 5-2Q, and 10-15 may have applicability in some scenarios when an average layer thickness of the deposited material 531 in the second portion 102 is substan felly high, including without limitation, one of at ieact about; 95, 45, 20, 10, and 8, nm,£00387] In some non -limiting examples, a material, including without limitation, a patterning material 4i i:may tend t© have a sobstanttePydow depositor contrast if the initial sticking probability of such material against deposition of at least one of: a metal, and an alloy, including without limitation, at leost one of: Mg, Ag, and MgAg, is substantially high.Surface Energy
[0388] A characteristic surface energy, as used herein, In some non -limiting examples, with respect to a material, may generally refer to a surface energy determined from such material{00389] In some non-limiting examples, a characteristic surface energy may be measured from a surface formed by the material deposited (coated) in a thin film form,
[0390] Various methods and theories for determining the surface energy of a solid are known.
[0391] In some non-limiting examples, a surface energy may be calculated (derived) based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure the contact angle between the liquid-vapor interface and the surface. in some -limiting exempted, a surface energy of a sofidsurface may be equal to the surface tension of a liquid with the highest surface tension that completely wets ths surface.
[0392] Innon -limiting example®, She critic®! surface tension of a surface may be determined according to the Zisman method, as further detailed in WA Zisman, Advances m Cheriwfry 43 (TSP4), pp. 1-51.
[0393] In some non -limiting examples, a characteristic surface energy of a material, including without limitation, a patterning material 411 Jn a coating, including without limitation, a paterning coating 110, may be determined by depositing the material as a substantially pure coating (e.g. a coating formed by e substantially pure material) on a substrate 10 and measuring a contact angle thereof with an applicable series of probe liquids.
[0394] In some non “limiting examples, a Zisman plot may be used to determine a maximum value of surface tension that would result In complete wetting (i.e. a contact angle & of IT') of the su dace.
[0395] A material which has applicability for use in providing the patterning coating 110 may generally have a low surface energy when deposited as a thin film (coating) on a surface. In some non -limiting examples, a material with a low surface energy may exhibit low mtenwlecular forces.
[0396] Without wishing to be bound by any particular theory, it is now postulated that a material With a substantially high wrfece aaergy may have applicability at least -in some applications that call for a high temperature reliability,
[0397] Without wishing to be bound by any particular theory, It has now been found that a patterning coating 110 comprising a material which, when deposited as a thin film, exhibits a substantially high surface energy, may, in same non-limiting examples, form a discontinuous layer 1S0 of at least one particle structure 150 of a deposited material 531 In the Unit portion 101aand a closed coating 140 of the deposited matenai 531 in the second portion 102, Including Without limitation, hi cases where the thickness of the closed coating is, in SdWte qom-Hmithig examples, ote of no mere tiiah about: 100, 76, 50, 25, and 15, nm.{00398] In some non -limiting examples, a series of samples was fabricated to measure the critical surface tension of the surfaces formed by the various materials. The results of the measurement are summarized in Table 6:Table 6 | | j | | | |
[0399] Based a n th @ foreg o ing m easu rem ent of th e criti cal su rfa ce ten s ton in Ta bte 6 and the previous observation regarding one of: the presence, and absence, of a wbafeaibsmy &km?d coating 140 of a deposited rwi&rW 531 , in the (urn? of Ag, it w»s» found that materials that form substantially tow surface energy surfaces when deposited as a coating , including without limitation, a patterning coating 110, which In some non-limtting examples, may be those having a critical surface tension of one of between about: 13 20 dynes / cm, stnd 13-19 dynes / cm, may have applicability for forming the patterning coating 110 to inhibit deposition of a deposited materiel 531 thereon, including without limitation, at least one of Yb, Ag, Mg, and a Ag -con tain in g material, including without limitation, MgAg, (00400] Without wishing to be bound by any particular theory, it may be postulated that materials that form a surface having a surface energy lower than, in some non-linWig examples, about 13 dynes / cm, may have reduced applicability as a patterning material 411 in seme scenarios, as such materials may exhibit at least one of: substantially poor adhesion to layers) surrounding such materials, a tow melting point, and a tow sublimation temperature.£00401] In some non-limiting examples, a matenal, including without limitation, a patterning material 411 that may tend to function as an NiC for a deposited material 531 „ including without limitation, at toast one of; a metal and an alloy, including without limitation, at lea^t one of: Mg, Ag, and a Ag-containing material, including without limitation.MgAg, may tend to exhibit a substantially low surface energy when deposited as a thin film (coating) on an exposed layer surface 11.
[0402] In some non-limiting examples, a material, including without limitation, a patterning material 411, may tend to exhibit a substantially low surface energy when deposited as a thin him (coating) On an exposed layer surface 11..
[0403] In some non-limiting examples, a material, including without limitation, a patterning material 411 , with a substantially low surtace on orgy may tend to exh sb 4 substantially tow inter-molecular forces.
[0404] In some non limiting examples, there may be scenarios calling for a patterning material 411 that has a substantially low surface energy that is not unduly low.
[0405] In some non -limiting examples, a material, including without limitatfoe, a paterning material 411. with a substantially high surface energy nw have applicability for some scenarios to detect a film of such material using optical techniques.
[0406] Without wishing to be bound by any particular theory, it may be postulated that, in seme non -limiting examples, a material, including without limitation, a patterning material 411 , having a substantially high surface energy may have applicability far same scenarios that call for substantially high temperature reliability .
[0407] In some non-limiting examples, a material, including without limitation, a paterning material 411 , that may function as an NIC for at least one of: a metal and an alloy, including without limitation, at least one of Mg, Ag, and a Ag -containing material, including without limitation, MgAg, having a substantially high surface energy may have applicability In some scenarios calling for a discontinuous layer 160 of particle staKfores 150 of at least one of: the metal, and the alloy, in the first portion 101, when an average layer thickness of a continuous waling 140 of at least one of. the metal, and the alloy, in the second portion 102 ss substantially tow, including without limitation, one of no more than about 100, 50, 25, and 15, nm.
[0408] In some non-limiting examples, a material, including without limitation, a paterning material 411 , that may function as an NIC for a deposited material 531, includingwithout limitation. at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Agon taming material, including without, limitation, MgAg, having a substantially low surface energy may have applicability In some scenarios calling for one of: a discontinuous layer foO of, and a tow density of, particle structures 150 of the deposited material 531 in the first portion 101 , when an average layer thickness of a dosed coating 140 of the deposited material 531 In the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.
[0409] In some non-limiting exampies, the surface of at least one of* the patterning coating 110, and the patterning materia 1411 , In some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, comprising the compounds described herein, may exhibit s surface energy of one of no more than about: 24, 22, 20, IS, 18, 15, 13, 12, and 11, dyoes'cm,
[0410] i n so me non -i m iti n g exa m pies , the su rfeca val u es in va ri ous n on-limiting examples herein may correspond to such values measured at around normal temperature and pressure, which may correspond to a temperature of 2 (FC, and a pressure of 1 atm.
[0411] In some non-limiting examples, the surface energy may be one of at feast about: 8, 7, and 8, dynes / cm.
[0412] to some non limiting exampies, the surface energy may be ace of between about: 10-20, and 13 -19, dynes / cm.TemperatureGl ass Tra n si bo n T em peratu re
[0413] to some non-limiting examples, at Is^st one of: the paterning coating 110, and the pattern tog materia 1 411 , In some non -Smiting examples, when deposited as atleast one of: a film, and coating, to a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a glass transition temperature that Is one of: one of at least about: 300, 150, and 130ftC, and one of no more than about: 30, 0, -30, and -o0°C,100414] In some non-limiting examples, a material, including without limitation, a paterning material 411, having substantially low inter-molecular forces may tend to exhibit a substantially few sublimation temperature.
[0415] In some non •-limiting examples, a material, including without limitation, a paterning materet 411, having, a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness in a deposited film of the material
[0416] In some non dim hi ng examples a material, including without limitation, a paterning material 411, having a sublimation temperature that is one of no mare than about: 140, 120, 110, 100, and 90 X, may tend to encounter constraints on at least one oh the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.
[0417] In some non-limiting examples, a material, including without limitation, a paterning material 411, having a substantially high sublimation temperature may have applicability In some scenarios wiling for substantially high precision in the control of the average layer thickness of a film comp rising such material,
[0418] In some non -limiting examples, the patterning material may have a sublimation temperature of one of between about: 100-320, 1.20-300, 140-280, and 150- 250°C. In some non-limrting examples, such sublimation temperature may allow the patterning material 411 to be substantially readily deposited as a coating using PVD,
[0419] I n so me non -li m iti n g exa m pies , a mate ri al with su bste ntia II y lew in ter molecule r forces may exhibit a substantially law sublimation temperature.
[0420] In some non -limiting examples, a material, including without limitation, a paterning material 411, having a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness of a closed coatmg 140 of the material.
[0421] In some non-limiting examples, a material, including without limitation, a ^patterning material 411 . having sof na mote than about: 140, 120, 110, 100, and 90’C, may tend to encounter constraints on at least one of:the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, Including without limitation, vacuum thermal evaporation.
[0422] In some non -limiting examples, a material, including without iimltatfon, a patterning material 411. having, a substantially high sublimation temperature may have applicability In some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material
[0423] The sublimation temperature of a material including without limitation, a patterning material 411 , may be determined using various methods apparent to those having ordinary skill m the relevant art, including without limitation, by heating th a material hi an evaporation source under a substantially high vacuum environment, hi some non- limiting examples, about 104Torr, and including without limitation, in a crucible and by determining a temperature that may be atained, to at least one of:• observe commencement of the deposition of the material onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible;• observe a specific deposition rate, In some non -limiting examples, 0.5 A / sec, onto an exposed lay^r surface 11 on a QCM mounted a fixed distance from the crucible; and• reach a threshold vapor pressure of the material, In some non-limiting examples, one of about 10-4and KT® Torr..
[0424] In some non -limiting examples, the QCM may be mounted about 65 cm away from the crucible for the purpose of determining the sublimation temperature.
[0425] In some non-limiting examples, the patterning material 411 may have a sublimation temperature of one of between about 100-320, 100-300, 120-300, 100-250, 140-280, 120-230, 130-220, 140-210, 140-200, 150-250, and 140-190’C.
[0426] In some non -limiting examples, the sublimation temperature of the patterning material 411 , including without limitation, the linked cyclophosphazene compound, may be one of no more than about; 350, 330, 300, 280. 250, 230, and 21 OX,
[0427] In some non -limiting examples, the sublimation temperature of the patterning material 411 , including without limitation, the linked cydophosphozene compound, may be one of st least about: 110, 130, 150, 160, 170, 180, end 200*0.
[0428] In som© non -limiting examples, the patterning material 411, including without limitation, the linked cyclophosphazene compound, may have a melting point of one of at least about: 70, 80, 85, 90, 100, 110, and 120°C, and an evaporation temperature of between about 11 D-3D0X.[004291 It has now been found that a material, including without limitation, a patterning material 411, with substantially high sublimation temperature may have reduced applicability in scenarios calling for a substantially high thermal stability for use in prolonged thermal evaporation process. Without wishing to be bound by any particular theory, it may be postulated by the inventors that a material exhibiting a sublimation temperature which is close to its decomposition temperature may have reduced applicability in such scenarios due to an increased likelihood of such material decomposing during a prolonged thermal evaporation process. In some non-limiting examples, a decomposition temperature of the material may correspond to at least one of: an onset temperature, a temperature at OJ % weight loss, a temperature at 1% weight loss, and a temperature at 5% weight toss, which may be measured using thermogravi metric analysis (TGA). In some non-limiting examples, a material exhibiting a difference between a sublimation temperature and a decomposition temperature of one of no more than about: 30, 4G, 50, 60, 70, and 90’C, may have reduced applicability In some scenarios. In some non-limiting examples, a material exhibiting a difference between a subli maton temperature and a decomposition temperature of one of at least about: SO, 70, 90, 100, 110, 130, and 150°C, may have increased applicability in soma scenarios.TgbteZ100430] to some non-limiting examples, a material, Including without limitation, a paterning material 411, with substan dally low inter-molecular forces may tend to exhibit a substantially tow melting point.
[0431] In some non -limiting examples, a material, including without limitation, a paterning material 411 , having, a substantially low melting point may have reduced applicability In some scenarios calling for substantial temperature reliability for temperatures of one of no more than at least one of about: 50, 60, 70, and BCTC, In some non-limiting examples, because of changes in physical properties of such matertai at operating temperatures that approach the melting point.(00432] In some non-limiting examples, a material, including without limitation, a paterning material 411. having a substantially high melting point may have applicability in some scenarios calling for substantially high temperature reliability^
[0433] In some non-limiting examples, such material, including without limitation, a paterning matertai -411, may have a melting point of one of at least about: 40, 50, 55, 60, 65, 70, and 75SC.(00434] In some non-limiting examples, the melting point of the linked cycloph osphszene compound is no more than an evaporation temperature of the compound.
[0435] to some non -limiting examples, the melting point of the linked cyclophosphazene com pound is one of at least about: 70, 80, 85, 90, 1 CO, 110, and 12(FC.
[0436] In some non-limiting examples, a melting point of various materials was measured, as well as to visually observe the state of matter of these materials at room temperature and pressure, including without limitation, at around 20fC and 1 atm. The results are summarized in Table 8:Tabte 8
[0437] Based on the melting point measurements summarized in Table 8, it may be seen that , EM-11, EM -21, EM-23, EM-48, and EM -55 exhibit a substantially high melting point of at least 100’C. In seme non ■limiting examples, compounds exhibiting a melting point of at least about 70°C, including without limitation, EM-11, EM-20 to EM-23, EM-25 to EM-28, EM-43 to EM-46, EM-48 to EM-56, EM-58, and EM-63, may have applicability in some scenarios calling for a substantially high thermal stability, especially when incorporated into a device in a form of, including without limitation, at least one of a: thin Him, coating, and layer, of the device. In some non-limiting examples, compounds exhibiting a melting point of no less than about 80*0, Including without limitation, EM-11 , EM-20 to EM-26, EM-28, EM-43, EM-44, EM-46, EM-48, EM-49, EM-50, EM-54, EM-55,EM- 56, EM -58, and EM-83, may have applicability In some scenarios calling for a substentially high thermal stability, especially when incorporated into a device in a form of, including without limitation, at least one of a: thin film, coating, and layer, of the device.Cohesion Energy
[0438] According to Young’s equation (Equation (13)) the cohesion energy (fracture toughness / cohesion strength) of a material may tend to be proportional to its surface energy (cf. Young, Thomas (1805) “An essay on the cohesion of fluids”, Ph / tosoph / caf Traasact / orjs of the Rtoyd Scdefy of Lomfor?, 95: 65-87).
[0439] According to Lindemann’s criterion, the cohesion energy of a material may tend to be proportional to its melting temperature (cf. Nanda, K.K., Sahu, S.N, and Behera, S.N (2002), “Liquid -drop mod el for the size-dependent melting of low-dimensional systems” P / rys. Rey. A 86 (1): 013208)
[0440] In some non-limiting examples, a material, including without limitation, a patterning material 411 , having substan tially low inter-molecular forces may tend to exhibit a substantially low cohesion energy.
[0441] In some non-limiting examples, a material, including without limitation, a patterning rnatenal 411 , having a substoritidity low cohesion energy rhay heivc reduced applicability In some scenarios that call for substantial fracture toughness, including withoutlimitation, in a device 100 that may tend to undergo at least one of: sheer, and bending, stress during at least one of: manufacture, and use. as such material may tend to crack (fracture) in such scenarios. In some non-limiting examples, a material, including without limitation, a patterning material 411, having a cohesion energy of no more than about 30 dynes / cm may have reduced applicability In some scenarios in a device 100 manufactured on a flexible substrate 10.100442] In some non-limiting examples, a material, including without limitation, a patterning material 411, that has a substantially high cohesion energy, may have applicability In some scenarios calling for substantially high reliability under at least one of: sheer, and bending, stress, including without limitation, a device 100 manufactured on a flexible substrate 10,
[0443] In some non limiting examples, a material, including without limitation, a patterning material 411, having a surface energy that is substantially low but is not unduly low may have applicability In some scenarios that call for substantial reliability under at least one of: sheer, and bending, stress, including without limitation, a device 100 manufactured on a flexible substrate 10.Optical / Band Gap
[0444] In the present disclosure, a semiconductor material may be described as a material that generally exhibits a band gap. In same non -limiting examples, th® band gap may be formed between a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbitel (LU MO) of the semiconductor material. Semiconductor materials may thus tend to exhibit electrical conductivity that is substantially no more than that of a conductive materia I (including without limitation, at least one of: a metal, and an alloy), but that is substantially at least as great as an insulating material (including without limitation, glass). In some non -limiting examples, the semiconductor material may comprise an organic semiconductor material. In some non -limiting exam pl es, the semiconductor material may comprise an inorganic semiconductor material{00445] In some non-limiting examples, an optical gap of a material, including without limitation, a patterning material 411, may tend to correspond to the HOMO- LU MO gap of the material
[0446] In some non-limiting examples, a material, including without limitation, a patterh m g material 41 i , having a substdrriiaiiy terge / wiue optical (14QMV--LUMO gap) may tend to exhibit substantially weak, including without limitation, substantially no, photoluminescence in at least one of; the deep B(lue) ragion of the visible epeotruni the near UV spectrum, the visible spectrum , and the NIR spectrum.
[0447] In some non-limiting examples, a material having a substantially small HOMO-LUMO gap may have applicability In some scenarios to detect a film of the material using optical techniques.
[0446] In some non 41m Hi ng examples, an optical gap of the patterning material 411 may be wider than a photon energy of the EM radiation emitted by the source, such that the paterning material 411 does not undergo photoexcitation when subjected to such EM radiation.Refractive and Extinction Coefficient
[0449] In some non-limiting examples, at least one of: the paterning coating 110, and the patterning material 411 , In some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the pattenwg coatteo 110 withte the device 100, may have a tow rafractiwfndex,
[0450] In some non-limiting examples, at least one of: the patterning coating 110, and the paterning material 41 1, In some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a refractive index for EM radiation at a wavelength of 550 nm that may be one of no more than about: 1.55, 1.5, 1.45, 1,43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.
[0451] In some non-limiting examples, the refractive Index of the patterning coating 110 may be no more than about 1.7. In some non -limiting examples, the refractive index ofthe patterning costing 110 may be one of no more than about 1.6, 1..5, 1.4, and 1.3. In some non-limiting examples, the refractive index of the patterning coating 110 may be one of between about: 1 .2-1.6, 1 .2 1.5, and 1.25-1.45. As further described in various non- limiting examples above, the patterning coating 110 exhibiting a substantially tow refractive index may have application in some scenarios, to enhance at least one of: the optical properties, and performance, of the device 100, including without limitation, by enhancing outooupllng of EM radiation emitted by the opto-electronic device 200.
[0452] Without wishing to be bound by any particular theory, it has been observed that providing the patterning coating 110 having a substantially low refractive index may. at least In some devices 100, enhance transmission of external EM radiation through the second portton 102 thereof. In some non -limiting examples, devices 100 including an air gap therein, which may be arranged near to the patterning coating 110, may exhibit a substantially high tensmittonce when the patterning seating IIQ hag a substantially low refractive index relative to a similarly configured device 100 in which such low-index patterning coating 110 was not provided.
[0453] In some non-limiting examples, st least one of: the patterning coating 110, and the patterning material 411 , In some non -limiting examples, when deposited as at feast one of: a film, and a coat? ng , in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a low refractive index.
[0454] in seme non-limiting examples, at least one of: the patterning coating 110, and the patterning material 411, In some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to tie deposition of the patterning coating 110 within the device 100, may have a refractive index for EM radiation st a wavelength of 550 nm that may be one of no more thee about: 1.55, 1 .5, 1.45, 1.43, 1 4, 1.39, 1 37, 1.35, 1.32, and 1.3.
[0455] In some non -limiting examples, the patterning coating 110 may be at least one of: substantially transparent, and light-transmissive.
[0456] In some non-limiting examples, at least one of. the patterning coating 110, and the patterning material 41 1 , In some non-limiting examples, when deposited as at leastQTO of: a film, and a coati ng , in a form, and under similar circumstances to the deposition of the paterning coating 110 within the device 100, may have an extinction coefficient that may be no more than about 0.01 for photons at a wavelength that is one of at least about: 600, 500, 460, 420, and 410, nm.(88457] tn someat least one of: the patterning coating 110, and the patterning material 411, In some non -limiting examples, when deposited as at least one of. a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning costing 110 within the device 100, may have an extinction coefficient that may be one of at least about 0.05, 0.1, 0.2, and 0.5 for EM radiation at a wavelength that is one of no more Wan about: 400, 390, 380, and 370, nm.100458] in this way, at least one of: the patterning coating 110, and the patterning materia I 411, when deposited as at least one of: a film, and a coating, in a form, and undersimilar to the deposition of the pawning coating iio withfo the •dentes 100, may absorb EM radiation in the UVA spectrum incident upon the device 100, thereby reducing a likelihood that EM radiation in the UVA spectrum may impart constraints in terms of at least one of: device performance, device stability, device reliability, and device lifetime.(00459] In some non -limiting examples, the patterning coating 110 may exhibit an extinction coefficient of one of no more than about; 0.1, 0.08, 0,05. 0.03, and 0.01 in the visible light spectrum,(00460] In some non-limiting examples, photoiuminescence of at least one of: a coating, and a mate rial may be observed through a photoexcitation process, to a photoexcitation process, at least one of: the coating, and foe material, may be subjected to EM radiation emitted by a source, including without limitation, a UV lamp.
[0461] When the emitted EM radiation is absorbed by at least one of: the coating, and the material, the electrons thereof may be temporarily excited. Following excitation. at feast one relaxation process may occur, including without limitation, at least one of:fluorescence and phosphorescence, in which EM radiation may be emitted from at least one of: the coating, and the material.(00462] The EM radiation emitted from at least one of the coating, and the material, during such process may be detected, far example, by a photodetector, to characterize the
[0463] As used herein, a wavelength of photoluminescence, in refation to at feast one of: the coahng, and the material, may generally refer to a wavelength of EM radiation emitted by such at least one of: the coating, and the mate n al, as a result of relaxation of electrons from an excited state. As would be appreciated by a person having ordinary skill in the relevant art, a wavelength of light ©milted by at least one of: the coating, and the material, as a result of the photoexcitation process may, In some non-limiting examples, be longer than a wavelength of radiation used to initiate photoexcitation. Photoluminescence may be detected using various techniques known in the art, including, without limitation, ffa orescen ce m I cr oscopy .£00464] In some non “limiting examples, the optical gap of the various coatings / materials may correspond to an energy gap of the coating / material from which EM radiation is one of absorbed, and emitted, during the photoexcitation process*
[0465] In some non “limits ng examples, photoluminescence may be detected by subjecting the coating / material to EM radiation having a wavelength corresponding to the UV spectrum, such as In some non -limiting examples, one of: UVA, and UVB. In same non- limiting examples, EM radiation for causing photoexcitation may have a wavelength of about 365 nm.
[0466] In some non-limiting examples, the patterning material 411 may nut substeotfelly exhibit photoluminescence at any wavelength corresponding to the visible spectrum.
[0467] In some non-limiting examples, the patterning material 411 may not exhibit photoluminescence upon being subjected fa EM radiation having a wavelength of one of at test about: 300, 320;. 350, and 363. rrm.
[0468] As used herein, at feast one of: the coating, and the material, that is photolu m in escent, may be one that exhibits photolu mm ©sconce at a wavelength when irradiated with an excitation radiation at a certain wavelength. In some non-limiting examples, at feast one of: the coating, and the material, that is photoluminescent, may exhibit photoluminescence at a wavelength that exceeds about 36§ nm, which is a wavelength of the radiation source frequently used in fluorescence microscopy, upon being irradiated with an excitation radiation having a wavelength of 365 nm.
[0469] At feast one of the coating, and the matenal, that is photo luminesce nt. may be detected on a substrate 10 using standard optical techniques including without limitation, fluorescence microscopy, which may establish the presence of such at least one of: the coating, and the material.
[0470] In some non limiting examples, a coating , including without limitation, a patterning coating 110, may exhibit photoluminescence, including without limitation, by comprising a material that exhibits photoluminescence.
[0471] In some non-limiting examples, the presence of such patterning coating 110 may be detected (observed) using routine characterization techniques such as fluorescence microscopy upon deposition of the patterning coating 110.
[0472] In some non -limiting examples, a coating, including without limitation, a patterning coating 110, may exhibit photoluminescence at a wavelength corresponding to at least one of: the UV spectrum, and visible spectrum, including Without Ihnitetfm by comprising a material that exhibits photoluminescence. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the UV spectrum, including, without limitation, one of: the UVA spectrum, and UVB spectrum. In some non- limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the visible spectrum, In some non limiting examples, photoluminescence may occur at a wavelength (range) corresponding to one of: deep B(lue) and near UV.
[0473] In some non-limiting examples, at least one of the materials of the paterning coati ng 110 that may exhibit photolumlnsscence may comprise at least one of: a conjugated bond, an sryl moiety, a donor-acceptor group, and a heavy metal complex.100474] In some non -limiting examples, a coating, including without limitation, a paterning coating 110, comprised of a material, Including without limitation, a paterning material 411, having substantially weak to no ph a to luminescence (absorption) in a wavelength range of one of at least about: 365, and 460, ran, may tend to not act as one of: a photoluminescent, and an absorbing, coating and may have applicability In some scenarios calling for substantially high transparency in at least one of; the visible spectrum, and the NIR spectrum.
[0475] In some non-limiting examples, such material may tend to exhibit substantially tow photeteminescence upon being subjected to EM radiation having a wavelength of about 365 nm, which is a wavelength of the radiation source frequently used in Huorescence microscopy. The presence of such materials, including without limitation, a patterning material 411, especially when deposited, In some non-limiting examples, as a thin film, may have reduced apptabity seme scewrtos csUtog for -typical optical detection techniques, including without limitation, fluorescence microscopy. This may impose constraints In some scenarios in which such material may be selectively deposited, for example through an FMM, over part(s) of a substrate 10, as there may be some scenarios for determining, fol lowing the deposit ton of the material, the part(s) in which such materials are present
[0476] In some non-limiting examples, a material with substantially tow to no absorption at a wavelength that is one of at least about: 365, and 460, nm, may have applicability In some scenarios calling for substantially high transparency in at least one of: toe totobfe spectrum, and toe NIR spectrum.
[0477] to some non -limiting examples, at least one of: the patterning coating 110, and the patterning material 411, In some non -limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of toe paterning coating 110 within the device 100, may not substantially atenuate EM radiation passing therethrough, in at least the visible spectrum.
[0478] to some non-limiting examples, at feast one of: the patterning coating 110, and the patterning material 411, when deposited as at least one of: a film, and a coating, in .a form, sn&wdfir-sdmiar to fee deposition nf impawning rwttog 110within the device 100, may not substantially attenuate EM radiation passing therethrough, in at feast one of: the IR spectrum , and the NIR spectrum,J00479] In this way, at least one of: the patterning coating 110, and the patterning material 411, when deposited as at least one of: a film:and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may absorb EM radiation in the UVA spectrum incident upon the device 100, thereby reducing a likelihood that EM radiation in the UVA spectrum may impart constraints in terms of at least one of: device performance, device stability, device reliability, and device lifetime.
[0480] In some non -limiting examples, the patterning coating 110 may act as an optical coating,
[0481] In some non -limiting examples, the patterning coating 110 may modify at least one of: st least one property, and at least one characteristic, of EM radiation (including without limitation.. in the form of photons) emited by the device 100. In some non-limiting examples, the patterning coating 110 may exhibit a degree of haze, causing emitted EM radiation to be scattered In some non-limiting examples, the patterning coating 110 may comprise a crystalline material for causing EM radiation transmited therethrough to be scatered. Such scattering of EM radiation may facilitate enhancement of the outcoupling of EM radiation from the device 100 In some non-limiting examples. In some non-limiting examples, the patterning coating 110 may initially be deposited as a subststatafiy non-crjStaWse, inetadtag without 'iwttoton, SubStahtiaHy aMfto, coatihg, whereupon, after deposition thereof, ths patterning coating 110 may become crystallized and thereafter serve as an optical coupling .100482] In some non -limiting examples, the patterning material 411 may exhibit insignificant, including without limitation, no detectable, absorption when subjected to EM radiation having a wavelength of one of at least about: 300, 320, 350, and 365, nm.
[0483] In some non-limiting examples, the patterning coating 110 may not exhibit any substantial EM radiation absorption at any wavelength corresponding to the visible spectrum.Average Lgygr Thickngss(00484] In some non-lirniting examples, an average layer thickness of the patterning coating 110 may be one of no more than about 10, 8, 7, 6, and 5, nm.|00485] Without wishing io be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting low initial sticking probability with respect to the deposited materia 1 531 , including without limitation, at least one of: a metal, and an alloy, in eluding without limitation, Yb, Ag, Mg, end a Ag-containing material, including without limitation, MgAg, may exhibit high transmittance. Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting high sticking probability with respect to the deposited material 531 , including without limitation, at feast one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and a Ag- containing material including without limitation, MgAg, may exhibit low transmittance.
[0486] In some non dim hi ng examples, e material, including without limitation, a paterning material 411 , may tend to have a substantially high initial sticking probability against deposition of a deposited material, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag- con taming material, including without limitation, MgAg, if the material has a substantially high surface energy.
[0487] ipexamples, a pattering ate ria! Mi that has a substantially low surface tension that is not unduly low, may have applicability In some scenarios calling for a substantially high melting point, including without limitation, between about 15-22 dynes / cm.
[0488] In some non -limiting examples, a material including without limitation, a paterning material411, having a surface tension that is substantially low, but not unduly low, may have applicability In some scenarios that call for a substantially high sublimation temperature.[M4®] In some non -limitin g exampfes, a coating, inteedtag without limitation, a paterning coating 110, comprised of a material, including without limitation, a paterningmaterial 411 , having a substantially low surface energy and a substantially high sublimation temperature may have application In some scenarios calling far substantially high precision in the control of the average layer thickness of a film comprising such material.
[0490] Without wishing to be bound by any particular theory, it may be postulated that materials that form an exposed layer surface 11 having a surface energy of no more than J n some non -limiting examples, about 13 dynes / cm, may have reduced applicability as a patterning material 411 In some scenarios, as such materials may exhibit at least one of: s ubs to nt iaily low adhesion to layerfs) surrounding such materials; a substantially low melting point, and a substantially low sublimation temperature.£00491] in seme non -limiting examples, a paterning coating 110 having a substantially tow surface energy and a substantially high melting point may have applicability In some scenarios calling for high temperature reliability. In some non -limiting examples, there may be chaitenges in achieving such a cc^mbinatton from a single material given that In some nondimiting examples, a single material having a low surface energy may tend to exhibit a low melting point.
[0492] Without wishing to be bound by any particular theory, it may be postulated that such compounds, including without limitation, of at least one paterning material 411, may exhibit at least one property that may have applicability In some scenarios for forming at least one of: a coating, and layer, having at least one of. a substantially high melting point, In some non-limiting examples, of at least 1CKFC, a substantially low surface energy, a™ a substarifteHy anwphtm structure, whets deposited, in some nm-IrrhSrng ex^mpfes, using vacuum- bssed therm si evaporation processes.
[0493] In some non -limiting examples, a coating , including without limitation, a patterning coating 110, having a substantially tow surface energy, a substantially high cohesion energy, and a substantially high melting point may have applicability In some scenarios that call for substantially high reliability under various conditions. In some non- limiting examples, there may be challenges in achieving such a combination from a single material, given that, In some non-limiting examples, a unitary material having aIn w surface wergy may ted to exhibit a wb&Uattolly ln.w cohesion wnrgy and a substantially tow mailing point.
[0494] In some non-limiting examples, a material, including without limitation, a paterning material 411, having a substantially low surface energy and a substantially high cohesion energy may have applicability In some scenarios that call far substantially high reliability under at least one of: sheer, and bending, stress, In some non -limiting examples, there may be challenges in achieving such a combination from a single material, given that In some non-limiting examples, a thin film farmed substantially of a single material having a substantially tow surface energy may tend to exhibit a substantially low cohesion energy.
[0495] In some non-limiting examples, a material;including without limitation, a paterning material 411, having a substantially low surface energy may tend to exhibit at least one of: a substantially large, and substantially wide, optical gap. In some non -limiting examples, the optical gap of a material, including without limitation, a patterning material 411, may tend to comsspond to the HOMO-LUMO gap of the material.[004M] m general, a material with a low surface energy may exhibit at least one of: a large, and wide, optical gap which , I n some non-limiting examples, may correspond to the HOMO-LUMO gap of the materia I.
[0497] It has also now been found that a paterning coating 110 formed by a compound exhibiting a substantially low surface energy may also exhibit a substantially low refractive index.
[0498] In some non-limiting examples, at least one of: the patterning coating 110, and the patterning material 41 1, may exhibit a surface energy of no more than about 25 dynes / cm and a refractive Index of no more than about 1.45. In some non-limiting examples, at feast one of; the patterning coating 110, and the patterning material 411, may comprise a material exhibiting a surface energy of no more than about 20 dynes / cm and a refractive index of no more than about 1.4.
[0499] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially tow surface energy may have applicability to some scenarios calling for substantially weak to no, at least one of: photoluminescence, and absorption, in a wavelength range that is one of at least about: 365 and 460, nm.I00500] In some non-limiting examples, a material, including without limitation, a paterning material 411, having at least one of: a substantially large, and substantially wide optical gap (and HOMO-LUMO gap) may tend to exhibit a substantially weak to no photoluminesoenoe in at least one of: the deep B(lue) region of the visible spectrum, the near UV spectrum. the visible spectrum, and the NIR spectrum*£00501] Without wishing to be bound by any particular theory, it may be postulated that, for compounds that are adapted to form surfaces with substantially low surface energy, there may be an aim. m at least some applications. for the molar mass of such compounds to be one of between about: 1 ,500-5,000, 1,500-4,500, 1,700-4,500, 2,000- 4,000, 2,200-4,000, and 2,500-3,800, g / mol.(00502] At least some materials with at least one of: one of: a large, and wide, optical gap, and HOMO-LUMO gap, may exhibit substantially weak to no photo luminescence in at least one of: the visible spectrum, rhe deep B(toe) region thereof and the near Uv spectrum* In some non -limiting examples, a material with a substantially small HOMO- LUMO gap may have applicability in applications to detect a film of the material using optical techniques. In some non -limiting examples, a material with higher surface energy may have applicability for apphcatais to detect of a film of the material using optical techniques100503] In some non-limiting examples, a materiel having a substantially large HOMO-LUMO gap may have applicability In some scenarios calling for weak to no at least one of: photoluminescence, and absorption, in a wavelength range of one of at least about: 365, and 460 n.m.Doping,
[0504] In some non -limiting examples, the patterning coating 110 may exhibit, including without limitation, because of at least one of: the patterning material 411 used, and toe deposition environment, at least one nucleation site for the deposited material 531.
[0505] to seme non dim tong examples, the patterning coating 110 may be doped, including without Ihmitatkm, by at feast one of: dwwring, and supplemmtfog, with another material that may act as st least one of: a seed, and heterogeneity, to ad as such anucleation site for the deposited material 531. In some non-limiting examples, such other material may comprise an NPC 720 material In some non-limiting examples, such other material may com prise an organic material, In some non -limiting examples, at least one of: a polycyclic aromatic compound, and a material comprising a non -meta Hie element, including without limitation, at least one of: O. S, N. and C, whose presence might otherwise be a contaminant in at least on® of: the source material, equipment used for deposition, and the vacuum chamber environment. In some nan -limiting examples, each ether material may be deposited in a layer thickness that is a fraction of a monolayer, to avoid forming a closed coating 140 thereof. Rather, the monomers of such other material may tend to be spaced apart in the lateral aspect so as form discrete nucleation sites for the deposited material.Piuraiitv of Materials Forming a Pate mi ng Coating
[0506] In some non-limiting examples, forming a patterning coating 110 of a single patterning material 411 against the deposition of a deposited material 531 , including without limitation, at feast one of* a given metal, and a given alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg, that satisfied constraints of at least one material property selected fiw at least one of: initial sticking probability, transmitance, deposition contrast, surface energy, glass transition temperature, meltmg point, sublimation temperature, evaporation temperature, cohesion energy, optical gap, photoluminescence, refractive index, extinction coefficient absorption, other optical effect, average layer thickness, molar mass, and composition, for a given scenario, may impose challenges, given the substantially complex Interrelationships between the various material properties.
[0507] In some non-hmhmg examples, the patterning coating 110 may comprise a plurality of materials. In some non-limiting examples, the patterning coating 11D may comprise st teas! two materials In some non-limiting examples, the patterning coating 110 may comprise a first material and a second material. In some non-limiting examples, the patterning coating 110 may comprise additional materials, including without limitation, at least one of: a third material, and a fourth material.100508] In some non -limiting examples, at least one of the plurality of materials of the paterning coating 110 may serve as an NIC when deposited as a thin film.
[0509] In some non-limiting examples, at least one of the plurality of materials of the patterning coating 110 may serve as an NIC when deposited as a thin film, and another mateml thereof may form an NFC 720 when deposited as a thin fitm. In sorhe noh-limiting examples, the first material may form an NPC 720 when deposited as a thin film, and the second material may form an NIC when deposited as a thin film. In some non-limiting examples, the presence of the first matenal in the patterning coating 110 may result in an in creased initial sticking probability thereof compared to eases in which the patterning coating 110 is formed of the second material and is substantially devoid of the 11 mt matenal
[0510] In some non-limiting examples, at least one of the materials of the patterning coating 110 may be adapted to form a surface having a low surface energy when deposited as a thin film, In some non-limiting examples, the first material, when deposited as a thin film, may be adapted to form a surface having a lower surface energy than a surface provided by a thio film comprising the second material.
[0511] In some non -limiting examples, the patterning coating 110 may exhibit photoluminescence, including without limitation, by comprising a material which exhibits photoluminescence.
[0512] in seme non -limbing examples, the first material may exhibit photoluminescence at a wavelength corresponding to the visible spectrum, and the second material may not exhibit substantial photoluminescence at any wavelength corresponding to ths visible spectrum.
[0513] In seme non “limiting examples, the second material may not substantially exhibit phototammescence at any wavelength corresponding to the visible spectrum. In some non-limiting examples, the second material may not exhibit photoiuminescence upon being subjected io EM radiation having a wavelength of one of at least about: 300, 320, 350, and 365, nm . In some non -limiting examples, the second material may exhibit insignificant to no detectable absorption when subjected to such EM radiation,{00514] In some non -limiting examples, the second optical gap of the second material may be wider than the photan energy of the EM radiation emitted by the source, such that the second material doos not undergo photoexcitation when subjected to such EM radiation. However, In some non -limiting examples, the patterning coating 110 comprising such second material mav nevertheless exhibit photoluminescence upon being subjected to EM radiation due to the first material exhibiting photo luminesce nos. In some non-limiting examples, the presence of the patterning casting 110 may be detected using routine characterization techniques such as fluorescence microscopy upon deposition of the paterning coating 110.
[0515] In some non-limiting examples, the first matenal may have a first optical gap, and the second matenal may haw a second optical gap In some nori-limiting examples, the second optiuel gap may exceed the first optical gap. In some non-limiting examples, a riiference between the first optical gap and the second optical gap may exceed -one of about 0.3, 0.5, 0.7, 1, 1.3, 1.5, 1.7, 2.0, 2.5, and 3, eV.
[0516] In some non -limiting examples, the first optical gap may be one of no more than about 4.1. 3 5, and 34, eV In some non -limiting examples, the second optical gap may exceed one of about: 3.4, 3.5, 4.1, 5. and 8.2, eV.
[0517] In some eon -limit! ng examples, at feast one at: the first optical gap, and the second optical gap, may correspond to the HOMO- LU MO gap.
[0518] In some non dim hi ng examples, an optical gap of at least one of: the various coatings, and materials, including without i imitation, at least one of: the first optical gap, and the second opfacal gap, may correspond to an energy gap of at least one of: the coating, and the material, from which EM radiation is at least, one of: absorbed, anti emitted, during the photoexchation process.
[0519] In some non limiting examples, a concentration; including without limitation by weight, of the first material in the paterning coating 110 may be no more than that of the second material in the paterning coating 110. In some non-limiting examples, the patterning coating 110 may comprise one of at least about: 0.1, 0J, 0,5, D.8, 1, 3, 5, 8, 10, 15, and 20, wt%, of the first material. In some non-limiting examples, the patterningcoating 110 may comprise one of no more than about: 50, 40, 30, 25, 20, 15, 10, 8, 5, 3, and 1 , wt.%, of the first material. In some non -limiting examples, a remainder of the paterning coating 110 may be substantially comprised of the second material.
[0520] In some non -limiting examples, at least one of the materials of the patterning costing 11v, inciudtog Without ssniitotsori, at' least one of: the nrst mdterfel, and the second material, may have a molecular structure comprising a phosphazene group. In some non- limiting examples, the phosphazene group may be at least one ot a linear phosphazene group, a branched phosphazene group, and a cyclic phosphazene group In some non- limiting examples, the backbone may comprise a phosphazene group. In some non -limiting examples, the backbone may comprise a phosphazene group and at least one functional group comprising R In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples., such oom pound may comprise fuoM^pbospbaze^es.£00521] In some non -limiting examples, the patterning coating 110 may comprise a plurality of materials that each comprises at least one cyclophosphazene moiety In some non -limiting examples, a P atom of the at least one cyclophosphazene moiety may atach to at least one cycloph csph azene function group, A’, as described herein.£00522] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise a linked cycle ph os ph azene compound. In some son limiting examples, at least one of: the first material, and the second material, may comprise a linked cyclophosphazene compound having a structure represented by Chemical Formula (LPH- 1 ), which is reproduced below for reference:(LPH-1)where in Chemical Formula (LPH-1 ),.to represents a linker moiety; R independently represents a functional group; and «? and A are each integers between 2-4First Materia l and Second Material are Linked Cyclophosphazene Compounds£00523] In some non -limiting examples, each of the first material and the second material may be a linked cyclo phosph azene compound, In some non-limiting examples, each of the first material and the second material may have a chemical structure independently re presented by Chemical Formula (LPH-1 ).100524] In some non-limiting examples, the chemical structures of the first material end the second material may include at least one aspect In common, and at least one aspect that is different. In some non -I mill ng examples, at least one cyclo ph os ph azene mofety functional group, R, of the first material may be substantially identical to at least one cyclop hasp hazene moiety functional group, .R, of the second material, In some non-limiting examples, the linker moiety, Zf, of the first material may be substantially identical to the linker moiety, to-, of the second material In some non-limiting examples, the chemical structures of the first matenal and the second material may have the same number of phosphazene backbone monomer units, which by way of non -limiting example, may correspond to the chemical structures having the same value (s) for at least one of: A, and
[0525] In some nom -limiting examples, (i) each cyclophosphazene moiety functional group, fl, of the plurality of functional groups of the first, material may be Independently selected to be substantially identical to at feast one cyclophosphazene moiety functional group, fl, of the second material"the linker mofety, .to, of the first material may be substantially identical to the linker moiety, .to of the second material; and (iii) the value of at least one of: and AJ, of the first material may differ from the corresponding A, and is? value of the second material. In some non-limiting examples, at tea st one of: a and a?, of the first material may differ from the corresponding nsand / » value of the second material by 1. Insome non-limiting examples, the structure of the first material may have the value of z? being 2 and / n being 2, and the structure of the second ma ten al may have the value of / ? being 2 and being 3. In some non -limiting examples, the structure of the first material may have the value of / » being 2 and m being 2, and the structure of the second material may bave4.the value of o being 3 wd zahatog 3,
[0526] In some non -limiting examples, the structures of the first material and the second material may differ by a number of cyclophosphazene moieties contained therein, In some non-limiting examples, the first material may com prise two cyclophosphazene moieties, and the second material may comprise three cyd ©phosphazene moleties.
[0527] In some non-limiting examples, the structure of the first, material may be represented by Chemical Formula (LP 1 ) and the structure of the second material may be represented by Chemical Formula (LP-4). In some non-limiting examples, (0 each cyclophosphazene moiety functional group, 7?, of the plurality of functional groups of the second material may be independently selected to be substantially identical to at least one cyclophosphazene moiety functional group, R, of the first material;at least one linker moiety, £<, of the second material may be substantially identical to the linker moiety, Lc> of the fest material In some non -limiting examples, the plurality of linker moieties of the second material may be identical to one another,FirstCvciophosphazene Compound
[0528] tn some non -limiting examples, the first material may be a linked cyclophasphazene compound, and the second material may be a cyclophasphazene compound. In some non-lsmifing examples, the first matenal may be a linked cyclophasphazene compound, the structure of which is represented by Chemical Formula (LPH-1). In some non -limiting examples, the second material may be a cyclo phosphazene compound, the structure of which is represented by Chemical Formula (CPH-1 ):Where: R independently represents a cyclophasphazene moiety functional group; and / ? is an integer between 2-4.
[0529] In some non -Smiting examples, the structures of the first material and the second material may include at least one aspect In common, In some non-limiting examples, the structure of the second material may comprise at least onemoiety tendwtal group, R, whidi h-sete^ed to be sttfeste^eHy ktenttod to at least onecyclophasphazene moiety functional group provided in the structure of the first material. In some non-limiting examples, the structure of the second material may have a value of / ? that is the same as at least one of: / ?, and / ??, of the structure of the first material. In some non-limfting examples, the value of / » of at least one of: the first material, and the second material, may be one of: 2, and 3,100530] In some non “limiting examples, (i) each of the plurality of cyclophosphazene moiety functional group,of the second material may be independently selected to be substantially identical to at 'least one cyclophosphazene moiety functional group, #, of the firs? material; and (ii) the value of n of the structure of the second material is the same as at least one of: n and m of the structure of the first material
[0531] In some non-limiting examples, the plurality of (linked) cycfophosphazene compounds present in ths paterning coating 110 may have at least one cydophosphazerre moiety functional group, R, in asm mon. m some non -limiting examples, the group in common may be referred to as a first R group.
[0532] In some non-limiting examples, at least one compound of the (linked) cyclophosphazene compounds may comprise an # group that is absent in at least oneother (linked) cyclophosphazene compounds. In some non -limiting examples, such R group may be referred to as a second J? group.
[0533] In some non-limiting examples, the first A group and the second R group may be F-con tain in g moietek In some non -limiting examples, the first group and the second / ? f s wp «rwy each comprise a f uorocarbcm .unit. In -soma n.an4imifing examples. the first J? group and the second R group may each comprise a different number of fluorocarbon unh(s).
[0534] In some non -li miii ng examples, the second R group may have a F content th st is at least about that of the first A’ group. In sores non-limiting examples, the second R group may have a F content that is at least about that of the first J? group. In some non- limiting examples, the second y? group may have a degree of fluorination that is at least about that of the first A’ group. In some non-limiting examples, the second R group may comprise a number of fluorocarbon units that is at least about that of the first R group. In some non-limiting examples, the second ft group may comprise a number of C atoms that is at least about that of the first .ff group.
[0535] In some non -limiting examples, the first A group may comprise a fl rat fluoroalkyl moiety and the second A group may comprise a second fluoroalky I moiety. In some non-limiting examples, the first fluoroalkyl moiety may comprise a different number of C atoms than the second floorostl kyi moiety. In some non -limit! ng examples, numbers of C atoms of the first 7? group and the second 7? group may differ by one of between about: 1-5, t -4. 2-4. and 2-3.
[0536] In some nan -limiting examples, the first A group and the second 7? group may comprise different numbers of F atoms, In some non -limiting examples, numbers of F atoms of the first R group and th® second ft group may differ by one of no more than about: 152, 3, 4. 5, 6, 7, 8, 9, 10, 11 » and 12.
[0537] tn some non-limiting examples, e molar weight atributable to the first ft group may be different from a molar weight attributable to the second A group. to some non- limiting examples, molar weights atributable to the second 7? group and the first A group may differ by one of at least about: 20, 40, 50, 100, 150, 200, 300, and 400, g / mol. Insome non-limiting examples, a molar weight atributable to the second ft group may be atleast about a molar weight attributable to the first A? group.
[0538] As used herein, the term “an F content” of an R group may be understood to generally correspond to an ©mount of F contained by the J? group measured by, in soma .non»-gmthg examples, st feast one of: atomic pementoge. and weight pemotoge. of tha # group.
[0539] In order to compare the performance of a patterning coating 110 comprising a plurality of example materials, the following expen merits were conducted.
[0540] A series of samples were fabricated by depositing, fn vacuo, an approximately 15 nm thick layer of a nucleation modifying material over a glass substrate. The nucleation modifying material was varied between the samples. For each sample, the exposed layer surface 11 of the nucleation modify Ing coating formed thereby was then subjected to an open mask deposition of a deposited -nwertel 531, comprising Yb:LIF (1 :1rate of about 1 A / sec, until a reference thickness of about 1 ,5 nn was achieved, followed by MgAg (Mg:Ag ~ 1 :9 (vokvol)), at a rate of about 1 A / sec, until a reference thickness of about 10 nm was achieved. Once the samples were fabricated , EM transmittance measurements were taken to determine a relative amount of the deposited material deposited on the exposed layer surface 11 of the patterning coating 110. Those having ordinary skill in the relevant art will appreciate that samples having litle to no metal present thereon may be substantially transparent. white samples with metal deposited thereon, particularly as a closed coating, may generally exhibit a substantially tower light transmitance. to some non dim hi ng examples, the threshold transmitance value may be expressed as a percentage of incident EM power that may be transmited through a sample. In some non -limiting examples, the threshold transmittance value may be one of at feast about: 60, 65, 70, 75, 60. 85, »nd 90%.100541] 'I 'he transmitance at wavelengths of 450, 520, and 850 , nm after each sample was subjected to a vapor flux 532 of Yb LiF and MgAg was measured and summarized in Table 9:Table 9100542] Reductions in EM transmittance at wavelengths of 450, 520, and 850, nm after each sample was subjected to the vapor flux 532 of YbUF and MgAg were summarized in Table 10. The reductions in EM transmitance were determined by measuring EM transmission through each sample and comparing the transmittance to a reference sample in which no exposure to vapor flux 532 of Yb:LIF and MgAg occurredTabteJO
[0543] As may be seen from the results m Tables 9 and 10, In some non-limiting examples, a transmitance of a patterning coating 110 formed by a plurality of materials which, In some non 4m King examples, may compose at least one linked cyclophosphazene compound, were fou nd to be at least that of the threshold transmittance value at wavelengths of at least one of about: 450, 520, and 850, rm. In some nen-ftmlting examples, it has !w found that these samples e* htwfod soWaothiiy in crewed transmittance at a wavelength of a beta 850 nm compared to a transmittance at awavelength of about 450 nm. Without wishing to be bound by any particular theory, it may be postulated that a nucleation modi tying material comprising a plurality of materials may have applicability in at least some scenarios calling for a substantially high transmittance.Mixtures with Other Materials(00544] In some non-imiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise at leasl one of: F, and Si. In some non -limiting examples, at least one of: the first material, and the second material, may comprise at least one of: F, and S- in seme non limiting examples, the first material may compose at least one of F, and Si, and the second material may comprise at least one of: F. and Si. In some non-limiting examples, the first material and the second material both may comprise F. In some non-limiting examples, the first material and the second material both may comprise Si. In some non-limiting examples, each of the first materia i and the second material may comprise at least one: F. and Si.(00545] In some non-limiting examples, at least one material of the first material and the second material may comprise both F and Sis In some non-limiting examples, one of the -first material and the second material may not comprise at least one of: F, and Si. In some non-limiting examples, the second material may comprise at least one of: F, and Si, and the first material may not comprise at least one of: F, and Si.
[0546] In some non-limiting examples, at least one of the materials of the paterning coating 110, including without limitation, the first material and the second material, may comprise a compound comprising F. In some non-limiting examples, at least one of; the test material, and the second material, may comprise a compound comprising F and C. in some non-limiting examples, at least one of: the first material, and the second material, may comprise a compound comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 0.5, 0.7, 1 , 1.5, 2, and 2.5.
[0547] In some non-limiting examples, an atomic ratio of F to G may be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp® hybridized C atoms present in the compound structure. In some non -limitingexamples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise a compound comprising, as part of its molecular sub-structure, a moiety comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 1 , 1 .5, and 2„ p@§48] tn some non h rh iti ng extoliptes, at least one of the Htoteh'stfs of the patterning coating 110, which In some non-limiting examples, may be at least one of: the first material, and the second material, may comprise F, and at least one of the other materials of the paterning coating 110 may comprise an sp2C atom In some non-limiting examples, al least one of the materials of the paterning coating 110, Including without limitation, at least one of: the first material, and the second material, may compnse F, and at least one of the other materials of the patterning coating 110 may compnse an sp'3C atom. In some non- limiting examples, at least one of the materials of the paterning coating 110, including without Imitation, at least one of: the first material, »d the second material, may comprise F and an sp3C atom, and at least one of the other materials of the patterning coating 110 may comprise an sp2C atom. In some non -limiting examples, at least one of the meterin Is of the patterning coating 110, including without limitation, at least on® of: the first material, and the second material, may comprise F and an sp3C atom, wherein ail F bonded to a C atom may be bonded to an sp3G atom, and at least one of the other materials of the paterning coating 110 may comprise an sp2C atom. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise F and an sp3C atom wherein all F bonded to a C atom may be bonded to an sp3C atom, and at least one of the other materials of the paterning coating 110 may comprise an sp2C atom and may not comprise F. In some non hmiting examples, m any of the foregoing non limiting examples, *at least one of the materials of the paterning coating 110” may correspond to the second material, and the *at least one of the other materials of the patterning coating 110” may correspond to the first material.
[0549] Those having ordinary skill in the relevant art will appreciate that the presence .of maWW in a coating which:^ompriaas at least one of1F. an sp2G atom, an sp3C atom, an aromatic hydrocarbon moiety, other functional groups, and other moieties, may bedetected using various methods known in the art, in eluding by way of non -limiting example, X-ray Photoe lactron Spectroscopy (XPS).£00550] In some non-limiting examples, at least one of the materials of the patterning coating 110, which byway of non-limiting example may be at feast one of; the first material, and the second material may comprise F, and rit feast orfe of die other materials of the paterning coating 110 may comprise an aromatic hydrocarbon moiety. In same non-limiting examples, at feast one of the materfels of the patterning coating 110, including without limitation, at feast one of: the first material, and the second matenal, may comprise F, and at least one of the materials of the paterning coating 110 may not comprise an aromatic hydrocarbon moiety. In some non -limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise F and may not comprise an aromatic hydrocarbon moiety, and st feast one of fee otherof the patenwa costing 110 may comprise an aromatic hydrocarbon moiety. In some n on > -limiting examples, at least one of the materials of the paterning coating 110, including without imitation, at least one of: the first material, and the second material, may comprise F and may not comprise an a ramate hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety and may not comprise F In some non-limiting examples, the aromatic hydrocarbon moiety may comprise at least one of: a substituted polycyclic aromatic hydrocarbon moiety, an unsubstituted polycyclic aromatic hydrocarbon moiety, a substituted phenyl moiety, and an un substituted phenyl moiety.(00551] In some non-limiting examples, at least one of the materials of the paterning coating 110, including without limitation, at least one of the first material, and the second material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the paterning coating 110, including without limitation, at feast one of. the first material, and the second material, may comprise F, and at least one of the materials of the paterning coating 110 may not comprise a polycyclic ndir hydrocarbon mnfety. In some non-limiting wampfes. at feastnf th® material of the paterning coating 110, including without limitation, at least one of: the first material,and the second material, may comprise F and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may com prise a polycydfe aromatic hydrocarbon moiety, In some non ■limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material and the second material, mav comprise F and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of tee patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety and may not comprise F.
[0552] In some non- limits ng examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise an organic-inorganic hybrid material.
[0553] In some non- limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise an oligomer.
[0554] In some non-limiting examples, at feast one of the materials of the patterning coating 110, including without limitation, the fl ret matenal and the second material, may comprise a compound having a molecular structure comprising a backbone and at least one functional group bonded to the backbone.. In some non -limiting examples, the backbone may be an inorganic moiety, and the at le^st one functional group may be an organic moiety.
[0555] In some non -limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one off a linear siloxane group, a branched siloxane group, and a cyclic sfioxane group bi soma non-limiting examples, the backbone may comprise a siloxane group In some n on-limiting examples, the backbone may comprise a siloxane group and at feast ana functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro-siloxanes(00556] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise al least one of: a iluorocartxm moiety and a siloxane moiety, and at least one of the other materials of the paterning coating 110 may compose a polycyclic s rum uric hydrocarbon moiety. In some non ‘limiting examples, at least one of ths materials of the patterning coating 110, Including without imitation, at least one of: the first material, and the second material, may comprise at least one of a fluorocarbon moiety, and a siloxane moiety, and at least one of the materials of the patterning coating 110 may not comprise a polycyclic aromatic hydrocarbon moiety. In some non -limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise at least one of: a fluorocarbon moiety, and a si I oxa no moiety, and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second materiel, may comprise at least one of. a fluorocarbon moiety, and a siloxane moiety, and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety and may not compose at least one of: a fiuoroc&rbon moiety, and a siloxane moiety.
[0557] In some non-limiting examples, at least one of the materials of the paterning coating 110, Including without limitation, the first material and the second material, may have a molecular structure comprising a silsesquioxane group, In some non -limiting examples, the silsesquioxane group may be a POSS, In some non-limiting examples, the backbone may comprise a silsesquioxane group. In some non -limiting examples, the backbone may comprise a silsesquioxane group and at least one functional1group comprising F, In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.(00558] In seme non-limiting examples, at least one of the materials of the paterning coating 110, Including without limitation, the first material and the second material, mayhave a molecular structure comprising al least one of. a substituted aryl group, an un substituted aryl group, a substituted heteroaryl group, and an un substituted heteroaryl group. In some non-llmHing examples, the aryl group may be at least one of: phenyl, and naphthyl. In some no n» limiting examples, at least one C atom of an aryl group may be substituted bv a h eteroatom. which bv way of non -limiting example may be at least one of: O, N» and S, to derive a heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the molecular structure of the compound may include: (i) the backbone comprising at least one of: a substituted aryl group, an unsurfuted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group; and (ii) at least one functional group comprising F. In some n on -limiting examples, the at least one functional group comprising F may be a fluurosikyl group.
[0559] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and th© second material, may compose F, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety In some non-limiting examples, at least one of the materials of the patterning coating 110, including without i imitation, at least one of: the first material, and the second material, may comprise F, and at least one of the materials of the patterning coating 110 may not comprise a phenyl moiety. In some non-limiting examples, at feast one of the materials of the pattern hip coating 110, including without limitation, at least one of: ths first material, and the second material, may comprise F and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may compnse a phenyl moiety. In some non limiting examples, at least one of the materials of the paterning coating 110, including without limitation, at feast one of: the first material, and the second material, may compose F and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety and may not comprise F. fOOSSOl in some rcto-Mteg examples, at Jeast -«a nf th® materials of the psttemmg coating 110, including without limitation, at least one of: the first material, and the secondmaterial, may comprise at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the other materia Is of the patern Ing coating 110 may comprise a phenyl moiety, In some non limiting examples, at least ana of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise at least one of a fluorocarbon mofety, and a siloxane moiety, and at least one of the materials of ths patterning coating 110 may not comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the paterning coating 110. including without limitation, at least one of the first material, and the second material, may comprise at least one of: a fluorocarbon moiety, and a siloxane moiety and may not comprise a phenyl moiety, and at feast one of the other materials of the patterning coating 110 may comprise a phenyl moiety, In some non-limiting examples, at least one of the materials of the paterning coating 110. including without limitation, at feast one of: the first material, and the second material, may comprise at least one of: a fluorocarbon mofety, and a siloxane moiety and may not comprise a phenyl moiety, and at least one of the other materials of the paterning coating 110 may comprise a phenyl moiety and may not comprise either of a fluorocarbon mofety, and a siloxane moiety
[0561] In some non -limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the first material, and the second material, may have a molecular structure comprising at least one of: a substituted hydrocarbon group, and an unsubstituted hydrocarbon group. In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a linear hydrocarbon group, e branched hydrocarbon group, and a cyclic hydrocarbon group. In some non-limiting examples, at least one Q atom of the hydrocarbon group may be substituted by a heteroatom, Including without limitation, at least one of: □, N, and S.
[0562] In some non-limiting examples, st feast one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may be a fluoropolymer. In some non-bmiflhg examples, the compound may be a block copolymer comprising F. In some non-limiting examples, the compound may be anotigrsimr. In snm® non-liwteig examples, th e nfigpmar may be a flunroc^omar In some non-limiting examples, the compound may be a block oligomer comprising F.100563] In some non-limiting examples, at least one of the materials of the paterning coating 110, including without limitation, at least one oft" the first material, and the second material, may be a metal complex. In some nonng examples, the metal complex may be an e^a no-metal complex, hi some non -I smiting examples, the organo -metal complex may comprise F. In some non-limiting examples, the organo-metal complex may comprise at least one ligand comprising F. In some non-limiting examples, the at least one ligand com prising F may comprise a fluoroalkyl group.
[0564] In general, at least one of: the molecular structures, and molecular compositions, of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may be different. In some non- limiting examples, the materials may be selected such that they possess at least one property which is one of: substantially similar to, and substantially different from, one anomer, including wtboutat hast one of:a molecular stractore of a monomer, a monomer backbone, and a functional group; a presence of a element m common; a similarity in molecular structure; a characteristic surface energy: a refractive index; a motor mass; and a thermal properly, Including without limitation, at least one of: a mating temperature, a sublimation temperature, a glass transition temperature, and a thermal decomposition temperature.
[0565] A characteristic surface energy, as used herein, In some non-limiting examples, with respect to a material, may generally refer to a surface energy determined from such material. In some rx / ii” itototng examples, a chardctertotic surface energy may be measured from a surface formed by the material deposited in a thin film form. Various methods and theories for determining the surface energy of a solid ere known. In some non-limiting examples, a surface energy may be determined based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure a contact angle between the liquid-vapor interface and the surface. In some non-limiting exampl es, a surface energy of a sohd surface may be equal to the surface tension of a liquid with the highest surface tension that completely wets the surface, to. semesgxaraptos. Zisman ptat may be used to determine a highest surface tension value that would result in complete wetting (r.e. contact angle of O’) of the surface.100566] In some non -limiting exam pies, at least one of the first material, and the second material, of the patterning coating 110 may be an oligomer
[0567] In some non "limiting examples, the first material may comprise a first oligomer, and the second material may comprise a second oligomer. Each of the first otfgffiTsBs" and rhe seeded oligomer may comprise a plurality or mdridrnerf*.
[0568] In some non -limit! ng examples, at least a fragment of the molecular structure of the at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may be represented by Formula (I):(Ato?) / ; (I) where;Afsvz? represents a monomer, end a is an integer of at least 2,
[0569] In some non" limits ng examples, n may be an integer of one of between about: 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7.
[0570] In some non "limits ng examples, the first material may be a linked cyclophosphazene, and the molecular structure of the second material may be independently represented by Formula (I).
[0571] In some non -limiting examples, at least one functional group of the monomer may have a surface tension of one of no more than about: 25, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11 „ and 10, dynes / cm.
[0572] In some non -limiting examples, the monomer may comprise at least one of: a CFs, and a CRH, moiety. In some non-limiting examples, the monomer may comprise at least one of. a CR, and a CR, moiety In some non-limiting examples, the monomer may comprise a CHaCR moiety, In some nan -limit! ng examples, the monomer may comprise at least me of: C, and O. In ssome non-limiting examples, the monomer may comprise a fluorocarbon monomen In some non-hmlWhg examples, the monomer may compose at least one of: a vinyl fluoride moiety, a vinyl Ide ne fluoride moiety, a tetrafluoroethylenemoiety, a chlorotrifluoroethylene moiety, a hexafluoropropylene moiety, and a fluorinated 1 ,3-dioxole moiety.
[0573] In some non -limiting example®, the m cm am er may comprise a monomer backbone and a functional group, In some non-limiting examples, ths functional group may be sjondeu, dne ot: directly, and via a sirtkage group, to the mono riier backbone. In sorne non “limiting examples, the monomer may comprise the I in Kegs group, and the linkage group may be bonded to the monomer backbone and to the functional group. In some non- limitmg examples, the monomer may comprise a plurality of functional groups, which may be one of: the same, and different, from one another. In such examples, each functional group may be bonded, one of: directly , and via a linkage group, to the monomer backbone. In some non-limiting examples, where a plurality of functional groups is present, a plurality of linkage groups may also ba present.
[0574] In some non-limiting examples, the molecular structure of the second material, may comprise a plurality of different monomers. In some non-limiting examples, such molecular structure may comprise monomer species that have different at least one of: molecular composition, and molecular structure-- In some non-limiting examples, such molecular structure include those represented by Formulae (II) and (III):( MW) X MW) ( H )where:MW, MW, and MW each represent a monomer specie, andA, / j?, and oeech are integers of at least 2.
[0575] In some non-limiting examples, / r, rar, and o each represent an integer erf one of between about: 2-100, 2-50, 3-20 , 3-15, 3-10, and 3-7 Those having ordinary skill in the relevant art will appreciate that various non-limiting examples and descriptions regarding monomer, MOT, may be applicable with respect to each of MW, MW. and MW.[SCI 57 S] In some non-imfttng examples the nrnsw rmy be njpiwwted by Formula(IV):gv) where: / / represents ths monomer backbone unit,£ represent® the linkage group,7? represents the functional group,,ds an integer between 1-4, and j- is an integer between 1-3.
[0577] In seme non-limiting examples, the linkage group may be represented by at least one of: a single bond, O, N, NH, C, CH, CHa, and S.
[0578] Various non-limiting examples of the functional group which have been described herein mdy apply with respect to j? 6f Formula (IV). Ih sortre hon-lirhiting examples, the functional group R may comprise an oligomer unit, and the oligomer unit may further comprise a plurality of functional group monomer units. In some non-limiting examples, a functional group monomer unit may be at least one of: CHa, and CF2. In some non -limiting examples, such functional group monomer units may be bonded together to form al least one of. an alkyl, and an fluuroalkyl, oligomer unit In some non-limiting examples, the oligomer unit may further comprise a fa notion a I group terminal unit In some non -limiting examples, the functional group terminal unit may be arranged at a terminal end «->f fess ©Ik^omer urta arid bonded to a funutfonsi group monomer unit, tn sows non-im&ip.g examples, the terminal end at which the functional group terminal unit may be arranged may correspond to a fragment of the functional group that may be distal to the monomer backbone unit. In some non -limiting examples, the functional group terminal unit may comprise at least one of: CF2H, and OF ’3.
[0579] In seme non- limiting examples, the monomer backbone unit M may have a high surface tension. In some non-lttniting examples, the monomer backbone unit may have a higher surface tension than at least one of the functional group(s) R bonded thereto, hi some iiursdirs smug examples, the monomer backbone unit may have a higher surface tension than any functional group ^ tended thereto.{00580] In some non -I Smiting examples, the monomer backbone unit may have a surface tension of one of at least about: 25, 30, 40, 50, 75, 100; 150, 200, 250, 500, 1,000, 1 ,500, and 2,000, dynes / cm-
[0581] In some non-limiting examples, the monomer backbone unit may comprise P and N, mduding without simitetion, a phuspha±ehe, in which there fe a double bond between P and N and may be represented as at least one of:SW?and “ / ¥= / ’’. In some non -limiting examples, the monomer backbone unit may comprise Si and O, including without Imitation, silsesquioxane, whsch may be represented as SsO&t.
[0582] In seme non-limiting examples, at. least a past of the molecular structure of the at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, is represented by Formula (V):where:AP represents the phosphazene monomer backbone unit,L represents the linkage group,A represents the functional group, x is an integer between 1 -4. y is an integer between 1 *3, and« is an integer of at least 2.
[0583] In seme non -II miti ng examples, the molecular structure of the second material, may be represented by Formula (V), In some non-limiting examples the second material may be a cyclophosphazene. In some non-limiting examples, the molecular structure of the cyclophosphazene may be represented by Formula (V).
[0584] In some non-limiting examples, £ may represent O, *may be 1,- and J? may represent a tarealkyi group. In some non-limiting examples, at least a fragment of thewhere: / ^represents the flueroaikyl group, and / HS an integer between 3-7.
[0585] In some non "limiting examples, the fiuoroalkyl group may comprise at least one of: a CR group, a CRH group, CH2CF3 group, and a CR group. In some non-limiting examples, tile fluoroalkyl group may be represented by Formula (VII):where: / ? is an integer between 1»5: integer between 6-20; andZ represents one of* H, and F.
[0586] In some non limiting examples, p may be 1.
[0587] In some non-limiting examples, the fluoroalkyl group fa in Formula (VI) may be represented by Formula (VII),
[0588] I n so me non m hi n g exa m pies , at I east a frag men t of the m o lecular str u cture of fee eeoond material may be represented by Ferula (VII;):where:L represents the linkage group,R represents the functional group, and z» is an integer between 6-12.
[0589] In some non-limiting examples, Xmay represent the presence of at toast one of: a single bond, O, substituted alkyl, and unsubstituted alkyl, In some non-limitingexamples, a may be one of: 8, 10, and 12. In some non -limiting examples 7? may comprise a functional group with low surface tension. In some non -limiting examples, 7? may comprise at least one of: an F-containing group, and a Si-containing group. In some non- limiting examples, R may comprise at least one of: a fluorocarbon group, and a siloxane- contatalna group, hi some non-limiting examples. 7? may comprise atleast one of: a CF2group, and a CFaH group. In some non-limiting examples, 7? may comprise at least one of: a CF», end a CF® group. In some non-limiting examples, 7? may comprise a CHxCF3group. In some non-Imiting examples, the material represented by Formula (VI II) may be a poly octahedral silsesquioxane (POSS).
[0590] In some non -limiting examples, at least a fragment of the molecular structure of at least one of the materials of the paterning coating 110, including without limitation, the second material, may be represented by Formula (IX):where:ZJ is an integer between 6-12, endJ?r represents a fluoroalkyl group,
[0591] In some non-limiting examples a may be one of 8, 10, and 12, In some non- limiting examples. 7? / may comprise a functional group with low surface tension. In some non-limiting examples, / frmay comprise at least one of: a CH moiety, and a CF2H moiety. In some non-limiting examples, 7? / may comprise at least one of a CF«, and a CF3moiety. In some non -limiting examples, 7? / may comprise a CHaCR moiety, hi some non-limiting examples, the material represented by Formula (IX) may be a POSS.
[0592] in seme non-limiting examples, the Huoroalkyl group,in Formula (IX) may be represented by Formula (VII).
[0593] In some non-limiting examples, at least a fragment of the molecular structure of th® second material may be represented by Formula (X):(SiOs / g-CCHsjXChjjs (X)where: xte integer between 1-5, and / ) is an integer between 6-12.,(00594] In some non -Ming exam pies , / ? may be one of: 8, 10, and 12>
[0595] In seme non -limiting examples, the compound represented by Formula (X) may be a POSS
[0596] In some non-hmitmg examples, at least one of: the functional groupand the fluor cal ky I groupmay be selected independently upon each occurrence of such group in any of the foregoing formulae Those having ordinary skill in the relevant art will appreciate that any of the foregoing formulae may represent a sub-structure of the compound, and at least one of: additional groups, and additional moieties, may be present, which are not explicitly shown In the above formulae. Those having ordinary ski in the relevant art wit appreciate that various formulae provided in the present application may represent at least one of: linear, branched, cyclic, cyclo -I in ear, and cross -I inked, structures.£00597] White some non-limiting examples have been described herein with reference to a first material and a second material, it will be appreciated that the patterning coating may further include at least one additional material, meted teg. without limitation, at feast one of: a third material end a fourth material, and descriptions regarding at least one of: the molecular structures, and properties, of at least one of: the first material, the second material, tea first oligomer, and the second oligomer, may be applicable with respect to additional materials which may be contained in the patterning coating 110.
[0598] in seme non -limiting examples, a different® in the sublimation temperature of the plurality of materials of the patterning coating 110, Including, without limitation, a difference between the Ural material and the second material, may be one of no more than about: 5, 10, 15, 20, 30, 40, and SOX.
[0599] In some non -limiting exam pies, a difference in a melting temperature of the plurality of materials of the patterning coating 110, including, without limitation, a differencebetween the first material and the second material, may be one of no more than about: 5,10, 15, 20, 30, 40, and 50’C.
[0600] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of; the first material, and the second material, may have a inw chamctertette surface energy.
[0601] In some non -limits ng examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the first material and the second material, may have a low charactenstic surface energy of no more than about 20 dynes / cm.
[0602] te some roi-llmhteg examples, the surface energy of each of the at teas! two materials of the patterning coating 110, including, without limitafbn, those of the ’first material and the second material, is one of no more about 25, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, and 10, dynes / cm.
[0603] In some non -limiting examples, a refractive index at a wavelength at least one of: 500, and 460, nm, of at least one of the materials of the patterning coating 1 W, including without limitation, at least one of: the first material, and the second material, may be one of no more than about: 1.5, 1 .45, 1.44, 1.43, 1 .42, and 1.41.
[0604] In some non -limiting examples, a molar mass of at least one of the materials of the patterning coating 110, including without limitation, at least one of. tee first material, and the second material, may be one of at feast about: 750, 1 ,000t1 ,500, 2,000, 2,500,3.000, gAwl
[0605] In some non -limiting examples, a molar mass of at least one of the materials of the patterning coating 110, including without limitation, at least one of: tee first material, and the second material, may be one of no more than about 10,000, 8,000, and 7,000, g / mol.
[0606] In some non -llmhteg examples, the molar mass of each of the first material and the second material is one of between about: 2,000-7,000, 2,300-6,700, 2,500-6,000, 3,500-5,700, and 4,000-7,000, g / moL
[0607] In som© non -limiting examples, the patterning costing 110 may comprise a plurality of materials exhibiting similar thermal properties. In some non -limiting examples, the patterning oositog 11 D may comprise a plurality m materials with similar thermal properties, including without limitation, at least one of: a melting temperature, and a su bl i mati on temp© ratu r© .
[0608] In some non -limiting examples, a method for manufacturing a layered semiconductor device 100, including without limitations an opto-electronic device 200 may comprise actions ot depositing a paterning coating on a first exposed Isiysr surface 11 of the device 100 in a first portion 101 of a lateral aspect thereof; and depositing a deposited material 531 on a second exposed layer surface 11 ef the device 100 in a second portion 10.2 of the lateral aspect thereof. An initial sticking probability against deposition of tine deposited material 531 onto an exposed layer surface 11 of the patterning coating 110 in the first portion 101, may be substantially less -than the initial sticking pcstebilty against deposition of the deposited material 531 onto an exposed layer surface 11 tii the second portion 102, such that the exposed layer surface 11 of the patterning coating 110 in the first portion 101 may be substantially devoid of a closed coating 140 of the deposited material 531. til some non-limiting examples, the patterning coating 110 deposited on the first exposed layer surface 11 of the device 100 may comprise a first material and a second material£00609] In some non -limiting examples, depositing the patterning coating 110 on the st exposed layer surface 11 of Sve device 10u may compose provtotoy a mixture comprising a plurality of materials, and causing the mixture to be deposited onto the first exposed layer surface 11 of the device 100 to form the patterning coating 110 thereon. In some non-limiting examples, the mixture may comprise the first material and the second material. In some non -limiting examples, the first material and the second material may both be deposited onto the first exposed layer surface 11 io form the patterning coating 110 thereon,
[0610] In some non -limiting examples, the mixture com prising the plurality of materials may be deposited onto the first exposed layer surface 1 1 of the device 100 by a PVD process, including without limitation, thermal evaporation. In some non-limitingexamples, the patterning coating 110 may be formed by evaporating the mixture from a single evaporation source and causing the mixture to be deposited on the first exposed layer surface 11 of the device 100. In some non-limiting examples, the mixture comprising, by way of non-hmiting example, the first material and the second material, may be placed in a single evaporation source (crucible) to be heated under vacuum. Once the evaporation temperature of the materials is reached, a vapor flux generated therefrom may be directed towards the first exposed Sayer surface 11 of Hie device 100 to cause the deposition of tbe paterning coating 110 thereon.
[0611] In some non limiting examples, the patterning coating 110 may be deposited by oo-evaporation of the first material and the second material, In some non -limiting examples, the first materiel may be evaporated from a first evaporation source, and the second material may be concurrently evaporated from a second evaporation source such IM the mixture may be formed in the vapor phase and may be co^depositedonte the first exposed layer surface 11 to provide the patterning coating 110 thereon.
[0612] As shown in FIG. 1, the layers of the device 100 may comprise a substrate 10, and a patterning coating 110 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof, In some non -limiting examples, the patterning coating 110 may be limited in its lateral extent to the first portion 101 and a deposited layer 130 may be disposed as a dosed coating 140 on an exposed layer surface 11 of the device 100 in s second portion 102 of its lateral aspect.(00613] In some non -II mill ng examples, at least one particle structure 150 may be disposed as a discontinuous layer ISO on the exposed layer surface 11 of the patterning coating T10. In seme non -limiting examples, although not shown, at teastone of: the paterning coating 110, ths deposited layer 130, and at least one particle structure 150, may be deposited on a layer (underlying layer 710) other than the substrate 10 including without limitation, an intervening layer between the substrate 10 and at least one of. the paterning coating 110, deposited layer 130, and the at least one particle structure 150., Insome non-limiting examples, the underlying layer 710 may comprise at least one of: an ©dentation layer, and an organic supporting layer.
[0614] In seme rw “limiting examples, at least one of: the patterning coating 110, the deposited layer 130, and the at least one particle structure 150, may be covered by at least OTiS Overlying lei y Or 1?iJ.
[0615] In some non “limiting examples, such overlying layer 170 may comprise at feast one of. an encapsulation layer and an optical mating. In some non-limiting examples, an encapsulation layer may include a glass cap, a barrier film, a barner adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer, provided io encapsulate the device 100. In some non -limit! ng examples, an opti cal coaling may include at least one of: an optical, and structural, coating, and at least one component thereof, including without limitation, a polarizer, e color filter, an a nti* -reflection coating, an a nti -glare coating, coverglass, and an opticaiy cfesr adhesive (GCA),
[0616] In some non-limiting examples, at least one of: a substantially thin paterning coating 110 in the first portion 101 , and a deposited layer 130 in the second portion 102, may provide a substantially planar surface on which the overlying layer 170 may be deposited. In some non-hmiting examples, providing such a substantially planar surface for application of such overlying layer 170 may increase adhesion thereof to such surface.
[0617] In some non-limiting examples, the optical coating may be used to modulate optical properties of EM radiation being at least one of: transmited, emited, and absorbed, by the device 100, including without limitation, plasmon modes. In some non-limiting examples, tee optical coating may be used as at least one of: an optical tiller, Index' malchmg coating, optical outcoupling coating, scattering layer, diffraction grating, and parte thereof.
[0618] In some non -limiting examples, the optical coating may be used to modulate at feast one optica! microcavity effect in the device 100 by, without limitation, tuning at least one of: the total optical path length, and the refractive index thereof. At feast one optical property of the device 1CD may be affected by modulating at least one optical microcavity effect including without limitation, the output EM radiation, including without limitation, attoast one of: an angular dependence of an intensity thereof, and a wavelength shift thereof, to some non-limiting examples, the optical coating may be a non -electrical component, that is, the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.[SOfJIS] in some ncsi-hittiting exdmptes, the optical coating di ay be torched ot ahy deposited material 531 , and In some non-limiting examples, may employ any mechanism of depositing a deposited layer 130 as described heroin.Opto- Electronic Device
[0620] FIG. 2 is a simplified block diagram from a longitudinal aspect, of an example opto-eleclronfc device 200, which may be, in some non-limiting examples, an electro- luminescent device 200, according to the present disclosure. In some non-limiting examples, the device 200 may be an OLED
[0621] The device 200 may comprise a substrate 10, upon which a frontptene 201 , comprising a plurality of layers, respectively, a first electrode 220, at. least, one semiconducting layer 230, and a second electrode 240, are disposed. In some non -limiting examples, the frontplane 201 may provide mechanisms for at least one of: emission of EM radiation, including without limitation, photons, and manipulation of emited EM radiation.
[0622] to some non -limiting examples, various coatings of such devices 200 may be formed by vacuum-based deposition processes.[uu6i3] to some non -limiting examples, the second electrode 240 may extend partially over the patterning coating 110 in a transition region 245.
[0624] to ...
Claims
WHAT IS CLAIMED IS:1 . A layered semiconductor device comprising a compound, the compound comprising: a plurality of cyclophosphazene moieties, each cyclophosphazene moiety being bonded to at least one other cyclophosphazene moiety by at least one linker moiety; and a plurality of cyclophosphazene moiety functional groups bonded to the plurality of cyclophosphazene moieties, at least one of the cyclophosphazene moiety functional groups comprising a fluorine (F)-containing moiety.
2. The device of claim 1 , wherein the plurality of cyclophosphazene moieties comprises a first cyclophosphazene moiety, and a second cyclophosphazene moiety; wherein a first linker moiety bonds the first cyclophosphazene moiety to the second cyclophosphazene moiety.
3. The device of claim 2, further comprising a third cyclophosphazene moiety bonded to at least one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by at least one of: the first linker moiety, and at least one additional linker moiety.
4. The device of claim 3, wherein the third cyclophosphazene moiety is bonded to one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by a second linker moiety.
5. The device of claim 3, wherein the third cyclophosphazene moiety is bonded to: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by the first linker moiety.
6. The device of any one of claims 1 through 5, wherein a total number of sp2carbon (C) atoms in the compound is one of no more than about: 30, 24, 18, 15, 12, 10, and 6.
7. The device of any one of claims 1 through 6, wherein a total number of sp2C atoms in any of the plurality of cyclophosphazene moiety functional groups is no more than a number of sp2C atoms in the at least one linker moiety.
8. The device of any one of claims 1 through 7, wherein: a total number of sp2C atoms in the compound is between about 1 -6; and a quotient of: a total number of fluorinated C atoms in the compound I the total number of sp2C atoms in the compound, is one of at least about: 7, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20.
9. The device of any one of claims 1 through 7, wherein: a total number of sp2C atoms in the compound is at least 7; and a quotient of: a total number of fluorinated C atoms in the compound I the total number of sp2C atoms in the compound, is one of at least about: 1 , 2, 4, 6, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20.
10. The device of any one of claims 1 through 9, wherein a quotient of: a total number of F atoms in the compound I a total number of C atoms in the compound, is one of at least about: 1 .51 , 1 .52, 1 .54, 1 .56, 1 .58, 1 .60, 1 .61 , 1 .62, 1 .63, 1 .64, 1 .65,1 .66, 1 .67, 1 .68, 1 .69, 1 .70, 1 .72, 1 .75, 1 .77, and 1 .81 .11 . The device of any one of claims 1 through 10, wherein a quotient of: a total number of F atoms in the plurality of cyclophosphazene moiety functional groups I a total number of C atoms in the plurality of cyclophosphazene moiety functional groups, is one of at least about: 1 .55, 1 .58, 1 .62, 1 .65, 1 .68, 1 .70, 1 .73, 1 .77, and 1 .81 .
12. The device of any one of claims 1 through 11 , wherein a molecular structure of the compound is represented by Chemical Formula (LPH-1 ):where:unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety;T? represents the cyclophosphazene moiety functional group, each T? independently comprising at least one of: F, chlorine (Cl), a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted fluoroheterocycloalkyl group, an unsubstituted fluoroheterocycloalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted fluoroheteroaryloxy group, a unsubstituted fluoroheteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, anamino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a trifluoromethylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group; m and n are each integers between 2-4; and each R1is independently at least one of: hydrogen (H), deutero (D), F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
13. The device of any one of claims 1 through 12, wherein each linker moiety has a molar mass of one of at least about: 12, 13, 15, 16, 20, 25, 30, 40, 50, 70, 100, 120, 130, and 150, g / mol.
14. The device of any one of claims 1 through 13, wherein a percentage of the molar mass of the compound that is attributable to the at least one linker moiety is one of at least about: 0.2, 0.3, 0.5, 0.7, 1 .1 , 1 .5, 1 .7, 1 .8, 2.0, 2.3, 2.5, 2.7, 2.9, 3.1 , 3.3, 3.5, 3.7, 4.0, and 4.5%.
15. The device of any one of claims 1 through 13, wherein a percentage of the molar mass of the compound that is attributable to the at least one linker moiety is one of no more than about: 5.5, 5.8, 6.0, 6.8, 7.0, 8.5, 8.7, 9.0, 9.2, 9.5, 9.7, 10.0, and 12.0%.
16. The device of any one of claims 1 through 15, wherein the at least one linker moiety comprises at least one cyclic moiety.
17. The device of claim 16, wherein the at least one cyclic moiety is one of: directly, and indirectly, connected to at least one of the plurality of cyclophosphazene moieties.
18. The device of claim any one of claims 1 through 17, wherein the at least one linker moiety is represented by one of: Chemical Formulae (LK-1 ) to (LK-4):where: eachyindependently represents a cyclic moiety; each independently represents a spacer moiety; each independently represents a bridging moiety; and each ndependently represents a point of attachment to one of the plurality ofcyclophosphazene moieties.
19. The device of claim 18, wherein the spacer moiety comprises at least one of: a single bond, oxygen (O), sulfur (S), nitrogen (N), C, an ether, a thioether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene.
20. The device of any one of claims 1 through 19, wherein the at least one linker moiety is represented by one of Chemical Formulae (LK-5) and (LK-6):where: each ndependently represents a cyclic moiety;represents a bridging moiety; andeach * independently represents a point of attachment to one of the plurality of cyclophosphazene moieties.21 . The device of any one of claims 18 through 20, wherein the cyclic moiety independently comprises at least one of: a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene.
22. The device of any one of claims 18 through 21 , wherein at least one ring atom of the cyclic moiety independently attaches to at least one substituent group comprising at least one of: H, D, F, Cl, an alkyl group, a fluoroalkyl group, a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a polyfluoroethyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluoromethoxy group, a trifluoromethoxy group, an aryl group, a heteroaryl group, a fluoroaryl group, a polyfluoroaryl group, a 4-fluorophenyl group, a 3,4,5-trifluorophenyl group, a 4-(trifluoromethoxy)phenyl group, a sulfanyl group, a fluoroalkylsulfanyl group, and a trifluoromethylsulfanyl group.
23. The device of any one of claims 18 through 22, wherein the cyclic moiety comprises an aromatic moiety.
24. The device of any one of claims 1 through 23, wherein the at least one linker moiety is represented by one of: Chemical Formulae (LK-7) and (LK-8):where: each Ar independently represents an aromatic moiety; each LB independently represents a bridging moiety; and each * independently represents a point of attachment to one of the plurality of cyclophosphazene moieties.
25. The device of claim 24, wherein the aromatic moiety is independently one of: a monocyclic aromatic moiety, and a polycyclic aromatic moiety.
26. The device of claim 24 or 25, wherein the aromatic moiety independently comprises at least one of a: 6-20, 6-15, and 6-9, membered aromatic moiety.
27. The device of any one of claims 1 through 26, wherein the at least one linker moiety is represented by one of: Chemical Formulae (LK-9), (LK-10), and (LK-11 ):(LK-1 1 ) where: each LB independently represents a bridging moiety; each independently represents a point of attachment to one of the plurality of cyclophosphazene moieties; each ^'independently represents at least one of: H, D, F, Cl, bromine (Br), an alkyl group, a cycloalkyl group, an alkoxy group, a fluoroalkyl group, a haloaryl group, a heteroaryl group, a haloalkoxy group, a fluoroaryl group, a fluoroalkoxy group, a fluoroalkylsulfanyl group, a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a difluoromethoxy group, a trifluoromethoxy group, a fluoroethyl group, a polyfluoroethyl group, a 4-fluorophenyl group, a 3,4,5-trifluorophenyl group, a polyfluoroaryl group, a 4-(trifluoromethoxy)phenyl group, a carbonyl group, a nitro group, a nitrile group, a phosphine oxide group, a diphenyl phosphine oxide group, and a trifluoromethylsulfanyl group ; and n is an integer between 0-4.
28. The device of any one of claims 18 through 27, wherein the bridging moietyan unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, and an substituted heterocycloalkylene: andeach R2is independently at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
29. The device of any one of claims 1 through 28, wherein each of the plurality of cyclophosphazene moiety functional groups independently comprises at least one of: F, Cl, a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, an amino group, an amine group, an alkylamine group, and an arylamine group.
30. The device of any one of claims 1 through 29, wherein each of the plurality of cyclophosphazene moiety functional groups independently comprises at least one of: F, Cl, a hydroxyl group, a C1-C12 alkyl group, a C1-C12 fluoroalkyl group, a C1-C12 alkoxy group, a C1-C12 fluoroalkoxy group, a C3-C18 aryl group, a C3-C18 fluoroaryl group, a C3- C18 aryloxy group, a roaryloxy group, an amino group, a Ci- C12 alkylaminegroup, an arylamine group.31 . The device of any one of claims 1 through 30, wherein each of the plurality of cyclophosphazene moiety functional groups independently comprises at least one of: a C1-C12 alkoxy group, a Ce-Cw aryloxy group, and a Ce-Cw fluoroaryloxy group.
32. The device of any one of claims 1 through 31 , wherein each of the plurality of cyclophosphazene moiety functional groups is independently represented by Chemical Formula (E-1 ): where:* represents a point of attachment to one of the plurality of cyclophosphazene moieties,epresents a linker group, comprising at least one of: a single bond, O, N, C,RDrepresents an intermediate group, comprising at least one of: O, an ether, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene;eachs independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
33. The device of any one of claims 1 through 32, wherein a majority of the plurality of cyclophosphazene moiety functional groups comprises the F-containing moiety.
34. The device of any one of claims 1 through 33, wherein substantially all of the plurality of cyclophosphazene moiety functional groups comprise the F-containing moiety.
35. The device of any one of claims 1 through 34, wherein the F-containing moiety comprises at least one of: a substituted fluoroalkyl, an unsubstituted fluoroalkyl, a substituted fluoroalkoxy, an unsubstituted fluoroalkoxy, a substituted fluoroalkylsiloxy, an unsubstituted fluoroalkylsiloxy, a substituted fluorocycloalkyl, an unsubstituted fluorocycloalkyl, a substituted fluoroaryl, and an unsubstituted fluoroaryl.
36. The device of any one of claims 1 through 35, wherein the F-containing moiety comprises a fluoroalkyl moiety represented by Chemical Formula (FL-1 ):where: is an integer between 0-6, y is an integer between 1 -20; and A is one of: H, D, and F.
37. The device of any one of claims 1 through 36, wherein the F-containing moiety comprises no more than 15 C atoms.
38. The device of any one of claims 1 through 37, wherein a majority of the plurality of cyclophosphazene moiety functional groups have an identical chemical structure.
39. The device of any one of claims 1 through 38, wherein substantially all of the plurality of cyclophosphazene moiety functional groups have an identical chemical structure.
40. The device of any one of claims 1 through 39, wherein at least one of the plurality of cyclophosphazene moiety functional groups has a molar mass of one of at least about: 50, 80, 100, 200, 300, 400, 430, 480, 530, and 580, g / mol.41 . The device of any one of claims 1 through 40, wherein at least one of the plurality of cyclophosphazene moiety functional groups has a molar mass of one of no more than about: 550, 600, 650, 700, 750, 800, 850, 900, 950, 1 ,000, and 1 ,200, g / mol.
42. The device of any one of claims 1 through 11 , wherein a molecular structure of the compound is represented by Chemical Formula (LPH-2):(LPH-2) where:epresents the linker moiety, comprising at least one of: a single bond, C, CH, an ether, a substituted amine, anunsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted C5-C30 arylene, an unsubstituted C5-C30 arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted C4-C30 heteroarylene, an unsubstituted C4-C30 heteroarylene, a substituted C3-C30 cycloalkylene, an unsubstituted C3-C30 cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety;T? represents the cyclophosphazene moiety functional group, each T? independently comprising at least one of: F, Cl, a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, an amino group, an amine group, an alkylamine group, and an arylamine group; and each T s independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, anaryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
43. The device of any one of claims 1 through 11 , wherein a molecular structure of the compound is represented by one of: Chemical Formulae (LPH-3) and (LPH-4):(LPH-4) where:Ley represents a cyclic moiety, each Ley independently comprising at least one of: a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene; represents a bridging moiety, comprising at least one of: a single bond, C, CH, S, O, CO, SO2, an ether, athioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene;each R2is independently at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
44. The device of any one of claims 1 through 1 1 , wherein a molecular structure of the compound is represented by one of: Chemical Formulae (LPH-5) and (LPH-6):(LPH-6) where: each ^ / -independently represents an aromatic moiety;LB represents a bridging moiety, comprising at least one of: a single bond, C, CH, S, O, CO, SO2, an ether, athioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, anunsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene; eachdependently comprises at least one of: C, F, a CF2 moiety, a CF2H moiety, a CF3 moiety, a SCF3 moiety, a SF3 moiety, a SF5 moiety, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a branched fluoroalkyl group comprising 2-15 C atoms, and an unbranched fluoroalkyl group comprising 2-15 C atoms; and each R2is independently at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
45. The device of claim 44, wherein the aromatic moiety is substituted by at least one of: H, D, F, Cl, an alkyl group, an alkenyl group, an alkynyl group, a fluoroalkyl group, a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a polyfluoroethyl group, a cycloalkyl group, a fluorocycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluoromethoxy group, a trifluoromethoxy group, an aryl group, a heteroaryl group, a fluoroaryl group, a polyfluoroaryl group, a 4- fluorophenyl group, a 3,4,5-trifluorophenyl group, a 4-(trifluoromethoxy)phenyl group, a sulfonyl group, a fluoroalkylsulfanyl group, a trifluoromethylsulfanyl group, a silyloxy group, a sulfide group, a carbonyl group, a nitro group, a cyano group, a phosphine oxide group, and a diphenyl phosphine oxide group.
46. The device of any one of claims 1 through 11 , wherein a molecular structure of the compound is represented by Chemical Formula (LPH-7):where:each / ^independently represents a phenyl moiety;LB represents a bridging moiety, comprising at least one of: a single bond, C, CH, , S, O, CO, SO2, an ether, athioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene; each ndependently comprises at least one of: C, F, a CF2moiety, a CF2H moiety, a CF3moiety, a branched fluoroalkyl group comprising 2 to 15 C atoms, and an unbranched fluoroalkyl group comprising 2 to 15 C atoms; and each R2is independently at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.
47. The device of claim 46, wherein the phenyl moiety is substituted by at least one of: F, Cl, a C1-C7 alkyl group, a C1-C7 fluoroalkyl group, a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a polyfluoroethyl group, a C1-C7 fluoroalkoxy group, a trifluoromethoxy group, a cycloalkyl group, a fluorocycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a difluoromethoxy group, a trifluoromethoxy group, a sulfonyl group, a fluoroalkylsulfanyl group, a trifluoromethylsulfanyl group, a silyloxy group, a sulfide group, a carbonyl group, a nitro group, a cyano group, and a phosphine oxide group.
48. The device of any one of claims 1 through 11 , wherein a molecular structure of the compound is represented by Chemical Formula (LPH-8):where: eachindependently a phenyl moiety; represents a bridging moiety, comprising at least one of: a single bond, C,S, O, a carbonyl, a sulfone, an ether, a thioether, a disulfide, a substituted cyclohexylene, an unsubstituted cyclohexylene, an arylene comprising 6 to 12 carbon (C) atoms, and a heteroarylene comprising at least 4 C atoms; s an integer between 1 -5; s an integer between 1 -20; and s one of: F, and H.
49. The device of claim 48, wherein the phenyl moiety is substituted by at least one of: F, a Ci-C6alkyl group, and a alkoxy group.
50. The device of any one of claims 1 through 49, wherein a molar mass of the compound is one of at least about: 3,000, 3,700, 4,000, 4,200, and 4,500, g / mol.51 . The device of any one of claims 1 through 50, wherein a molar mass of the compound is one of no more than about: 6,000, 5,700, 5,500, 5,300, and 5,000, g / mol.
52. The device of any one of claims 1 through 51 , wherein a percentage of a molar mass of the compound that is attributable to the plurality of cyclophosphazene moiety functional groups is one of at least about: 30, 40, 50, 60, and 70%.
53. The device of any one of claims 1 through 52, wherein a percentage of a molar mass of the compound that is attributable to the plurality of cyclophosphazene moiety functional groups is one of no more than about: 80, 85, and 90%.
54. The device of any one of claims 1 through 53, wherein a percentage of a molar mass of the compound that is attributable to the presence of F atoms is one of between about: 40-90, 45-85, 50-80, 55-75, and 60-70%.
55. The device of any one of claims 1 through 54, wherein the compound exhibits substantially no absorption of light at a wavelength of between about: 350-1 ,400 nm.
56. The device of any one of claims 1 through 55, wherein the compound has an optical gap of one of at least about: 3.4, 3.5, 4.1 , 5.0, and 6.2, eV.
57. The device of any one of claims 1 through 56, wherein the compound exhibits substantially no photoluminescence in a wavelength range of between about: 380-700 nm.
58. The device of any one of claims 1 through 57, wherein the compound is a solid at room temperature and pressure.
59. The device of any one of claims 1 through 58, wherein a melting point of the compound is no more than a sublimation temperature thereof.
60. The device of any one of claims 1 through 59, wherein a melting point of the compound is one of at least about: 70, 80, 85, 90, 100, 110, and 120°C.61 . The device of any one of claims 1 through 60, wherein a sublimation temperature of the compound is one of no more than about: 350, 330, 300, 280, 250, 230, and 210°C.
62. The device of any one of claims 1 through 61 , wherein a sublimation temperature of the compound is one of at least about: 110, 130, 150, 160, 170, 180, and 200°C.
63. The device of claim any one of claims 1 through 62, wherein a melting point of the compound is one of at least about: 70, 80, 85, 90, 100, 110, and 120°C, and the sublimation temperature of the compound is between about 110-300°C.
64. The device of any one of claims 1 through 63, further comprising: a patterning coating comprising the compound, the patterning coating being disposed on a first layer surface of an underlying layer in a first portion of a lateral aspect thereof; and a deposited layer comprising a deposited material, disposed on a second layer surface; wherein the first portion is substantially devoid of a closed coating of the deposited material.
65. The device of claim 64, wherein the patterning coating is adapted to reduce an initial sticking probability for vapor flux of a conductive deposited material.
66. The device of any one of claims 1 through 65, further comprising an emissive region comprising: a substrate; a first electrode and a second electrode; and at least one semiconducting layer disposed between the first and second electrodes; wherein the first electrode is disposed between the substrate and the at least one semiconducting layer.
67. The device of claim 65, wherein the first portion excludes a lateral aspect of the emissive region.
68. The device of claim 66 or 67, wherein the second electrode comprises at least a part of the deposited layer as a layer thereof.
69. The device of any one of claims 66 through 68, wherein the first portion includes a lateral aspect of the emissive region.
70. The device of claim any one of claims 64 through 69, further comprising an auxiliary electrode comprising the deposited layer as a layer thereof.
71. A compound comprising: a plurality of cyclophosphazene moieties, each cyclophosphazene moiety being bonded to at least one other cyclophosphazene moiety by at least one linker moiety; and a plurality of cyclophosphazene moiety functional groups bonded to the plurality of cyclophosphazene moieties, wherein at least one of the cyclophosphazene moiety functional groups comprises a F-containing moiety.
72. The compound of claim 71 , wherein the plurality of cyclophosphazene moieties comprises a first cyclophosphazene moiety, and a second cyclophosphazene moiety; a first linker moiety bonds the first cyclophosphazene moiety to the second cyclophosphazene moiety.
73. The compound of claim 72, further comprising a third cyclophosphazene moiety bonded to at least one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by at least one of: the first linker moiety, and at least one additional linker moiety.
74. The compound of claim 73, wherein the third cyclophosphazene moiety is bonded to one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by a second linker moiety.
75. The compound of claim 73, wherein the third cyclophosphazene moiety is bonded to: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by the first linker moiety.
76. The compound of any one of claims 71 through 75, wherein a total number of sp2C atoms in the compound is one of no more than about: 30, 24, 18, 15, 12, 10, and 6.
77. The compound of any one of claims 71 through 76, wherein a total number of sp2C atoms in any of the plurality of cyclophosphazene moiety functional groups is no more than a number of sp2C atoms in the at least one linker moiety.
78. The compound of any one of claims 71 through 77, wherein: a total number of sp2C atoms in the compound is between about 1 to 6; and a quotient of: a total number of fluorinated C atoms in the compound I the total number of sp2C atoms in the compound, is one of at least about: 7, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20.
79. The compound of any one of claims 71 through 77, wherein: a total number of sp2C atoms in the compound is at least 7; and a quotient of: a total number of fluorinated C atoms in the compound I the total number of sp2C atoms in the compound, is one of at least about: 1 , 2, 4, 6, 8, 10, 12, 13, 14, 15, 16, 17, 18, and 20.
80. The compound of any one of claims 71 through 79, wherein a quotient of: a total number of F atoms in the compound I a total number of C atoms in the compound, is one of at least about: 1 .51 , 1 .52, 1 .54, 1 .56, 1 .58, 1 .60, 1 .61 , 1 .62, 1 .63, 1 .64, 1 .65,1 .66, 1 .67, 1 .68, 1 .69, 1 .70, 1 .72, 1 .75, 1 .77, and 1 .81 .81 . The compound of any one of claims 71 through 80, wherein a quotient of: a total number of F atoms in the plurality of cyclophosphazene moiety functional groups I a total number of C atoms in the plurality of cyclophosphazene moiety functional groups, is one of at least about: 1 .55, 1 .58, 1 .62, 1 .65, 1 .68, 1 .70, 1 .73, 1 .77, and 1 .81 .
82. The compound of any one of claims 1 through 81 , wherein a molecular structure of the compound is represented by Chemical Formula (LPH-1 ):where:Lc represents the linker moiety, comprising at least one of: a single bond, C, CH,O, an ether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety;R represents the cyclophosphazene moiety functional group, each R independently comprising at least one of: F, chlorine (Cl), a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted fluoroheterocycloalkyl group, an unsubstituted fluoroheterocycloalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkoxygroup, an unsubstituted fluoroalkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted fluoroheteroaryloxy group, a unsubstituted fluoroheteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a trifluoromethylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group; m and n are each integers between 2-4; and each R1is independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.