Light-emitting assembly and preparation method therefor, and display panel

Abstract

The present application relates to the technical field of displays. Disclosed are a light-emitting assembly and a preparation method therefor, and a display panel. The light-emitting assembly comprises a first substrate, a light-emitting unit, a driving unit and pins, which are sequentially arranged, wherein the light-emitting unit is connected to the driving unit, and the driving unit is connected to the pins, such that the driving unit can receive a driving signal by means of the pins and control the light-emitting unit to emit light. Since the end face of the side of the pins away from the driving unit is a plane, the pins are not prepared by using an electroplating process or a chemical plating process. Thus, when pins are to be prepared, it is not necessary to place the entire assembly in a specific solution, and the phenomenon of an electrode connection being damaged due to the specific solution being immersed between electrodes is prevented, such that the light emission effect of the light-emitting assembly can be ensured.

Description

Light-emitting component and preparation method thereof, and display panel

[0001] This disclosure claims priority to Chinese patent application No. 202310627668.8 filed on May 30, 2023, entitled “Light-emitting component, preparation method thereof, and display panel”. The entire contents of the above case are incorporated into this disclosure by reference. Technical Field

[0002] The present application relates to the field of display technology, and in particular to a light-emitting component and a preparation method thereof, and a display panel. Background Art

[0003] The display panel includes a display backplane and a plurality of light-emitting components connected to the display backplane, wherein the display backplane can provide driving signals for the light-emitting components to make the light-emitting components emit light, thereby realizing display.

[0004] In related art, the light-emitting component has pins on the side closest to the display backplane, which are used to connect to the display backplane. The display backplane provides a driving signal to the light-emitting component through the pins, which in turn causes the light-emitting component to emit light under the driving signal. The process of preparing the pins includes placing the light-emitting component (which does not yet have pins) in a specific solution and forming the pins on one side of the light-emitting component using an electroplating or chemical plating process.

[0005] However, since the pins need to be prepared in a specific solution, the specific solution may easily affect the mutual electrical connection of at least some electrodes in the light-emitting component, thereby affecting the product yield.

[0006] Summary of the Invention

[0007] This application provides a light-emitting assembly, a method for manufacturing the same, and a display panel, which can solve the problem of the related art of affecting the mutual electrical connection of electrodes in the light-emitting assembly. The technical solution is as follows:

[0008] In one aspect, a light emitting assembly is provided, comprising:

[0009] A light-emitting unit, comprising: a first electrode, a second electrode, and a light-emitting portion electrically connected to the first electrode and the second electrode respectively;

[0010] a driving unit, the driving unit comprising a third electrode, a fourth electrode, and a driving circuit, the third electrode and the fourth electrode being located on a side of the driving unit facing the light-emitting unit, the third electrode and the fourth electrode being electrically connected to the driving circuit, respectively, the third electrode being electrically connected to the first electrode, and the fourth electrode being electrically connected to the second electrode;

[0011] a first substrate, located on a side of the light emitting unit away from the driving unit;

[0012] and a pin, wherein the pin is located on a side of the driving unit away from the light-emitting unit, the pin is connected to the driving unit, and an end surface of the pin on a side away from the driving unit is a plane.

[0013] Optionally, the driving unit includes a substrate, the driving circuit is located on one side of the substrate, and the substrate has a target surface on a side away from the driving circuit;

[0014] The pin is located on a side of the substrate away from the driving unit, and an end surface of the pin on the side away from the substrate is parallel to the target surface.

[0015] Optionally, a distance between an end surface of the pin away from the substrate and the target surface is in a range of 15 microns to 25 microns.

[0016] Optionally, the driving unit includes a substrate, wherein the substrate has a target surface on a side away from the driving circuit;

[0017] The portion of the pin protruding from the target surface has a shape of a prism, a truncated pyramid, a cylinder, and a truncated cone.

[0018] Optionally, the portion of the pin protruding from the target surface is shaped like a prism; the prism has a top surface on a side close to the target surface and a bottom surface on a side away from the target surface, and the bottom surface is the end surface;

[0019] The prism further has a plurality of rectangular side surfaces, and the relationship between the length W1 of a first side of the rectangular side surface and the length H1 of a second side of the rectangular side surface satisfies: W1=k1×H1;

[0020] The value range of k1 is 1.5 to 2.5, the first side is a side of the rectangular side close to the top surface, and the second side is a side of the rectangular side located between the top surface and the bottom surface.

[0021] Optionally, the portion of the pin protruding from the target surface is in the shape of a truncated pyramid; the truncated pyramid has a top surface close to the target surface and a bottom surface away from the target surface, and the bottom surface is the end surface;

[0022] The pyramid also has a plurality of trapezoidal side surfaces, and the relationship between the length W2 of the upper base of the trapezoidal side surfaces and the height H2 of the pyramid satisfies: W2 = k2 × H2;

[0023] Among them, the value range of k2 is 1.5 to 2.5, the length of the upper base of the trapezoidal side is less than the length of the lower base of the trapezoidal side, and the height H2 of the prism is equal to the distance between the top surface and the bottom surface.

[0024] Optionally, an area of ​​an orthographic projection of the top surface on the substrate is smaller than an area of ​​an orthographic projection of the bottom surface on the substrate, and the orthographic projection of the top surface on the substrate is located within the orthographic projection of the bottom surface on the substrate, and an upper base of the side surface of the trapezoid is closer to the substrate than a lower base of the side surface of the trapezoid;

[0025] The area of ​​the orthographic projection of the top surface on the substrate is greater than the area of ​​the orthographic projection of the bottom surface on the substrate, and the orthographic projection of the bottom surface on the substrate is located within the orthographic projection of the top surface on the substrate, and the lower base of the trapezoidal side surface is closer to the substrate than the upper base of the trapezoidal side surface.

[0026] Optionally, the portion of the pin protruding from the target surface is in the shape of a cylinder; the cylinder has a side surface, a top surface on a side close to the target surface, and a bottom surface on a side away from the target surface, and the bottom surface is the end surface;

[0027] The relationship between the diameter W4 of the top surface or the bottom surface and the height H4 of the cylinder satisfies: W4=k4×H4;

[0028] The value range of k4 is 1.5 to 2.5, and the height H4 of the cylinder is equal to the distance between the top surface and the bottom surface.

[0029] Optionally, the portion of the pin protruding from the target surface is in the shape of a frustum; the frustum has a side surface, a top surface on a side close to the target surface, and a bottom surface on a side away from the target surface, the bottom surface being the end surface;

[0030] The diameter of the top surface is different from the diameter of the bottom surface, and the relationship between the smaller diameter W5 of the top surface and the bottom surface and the height H5 of the truncated cone satisfies: W5=k5×H5;

[0031] The value range of k5 is 1.5 to 2.5, and the height H5 of the frustum is equal to the distance between the top surface and the bottom surface.

[0032] Optionally, an area of ​​a portion of the pin protruding from the target surface in a cross section parallel to the target surface increases as a distance between the cross section and the target surface increases.

[0033] Optionally, the first electrode and the second electrode are both located between the light-emitting portion and the driving circuit; and the materials of the first electrode and the second electrode both include metal;

[0034] A partial area between the driving unit and the light emitting unit has a gap, and both the first electrode and the second electrode are located in the gap and in direct contact with gas in the gap.

[0035] Optionally, the light emitting assembly includes a plurality of light emitting units and the driving units corresponding to the plurality of light emitting units;

[0036] The plurality of light emitting units include light emitting units of a first color, light emitting units of a second color, and light emitting units of a third color, and the first color, the second color, and the third color are different from each other.

[0037] Optionally, the light-emitting unit further includes a color filter layer, a color conversion layer, and a light-emitting layer stacked in sequence in a direction away from the first substrate; the light-emitting layer emits blue light;

[0038] The light-emitting layer includes a first doped layer, a multi-quantum well layer and a second doped layer arranged in a stacked manner, wherein the first doped layer is electrically connected to the first electrode, the second doped layer is electrically connected to the second electrode, and the light-emitting layer includes a first light-emitting portion, a second light-emitting portion and a third light-emitting portion.

[0039] Optionally, the driving unit further includes a connection structure, and the substrate included in the driving unit has a connection via hole, and the connection structure is located in the connection via hole;

[0040] The driving circuit is located on one side of the substrate and is connected to the connection structure. The side of the pin close to the driving unit is in contact with the connection structure.

[0041] Optionally, the driving circuit includes a plurality of thin film transistors and at least one storage capacitor, and each of the thin film transistors includes a gate, a source, and a drain;

[0042] The pin is connected to the source of one thin film transistor among the plurality of thin film transistors through the connection structure, and is used to provide the driving circuit with a data signal transmitted from a display backplane in the display panel.

[0043] Optionally, the driving circuit includes a buffer insulating layer, an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, an interlayer dielectric layer, a source and drain layer, and a planar layer, which are stacked in sequence on one side of the substrate; the third electrode and the fourth electrode are located on a side of the planar layer away from the substrate;

[0044] The active layer includes a plurality of active patterns corresponding to the plurality of thin film transistors, and each of the active patterns includes a source region, a drain region, and a channel region;

[0045] The source electrode and the drain electrode of the thin film transistor are located in the source-drain electrode layer, the source electrode of the thin film transistor is connected to the source region, and the drain electrode of the thin film transistor is connected to the drain region;

[0046] The first gate layer includes a plurality of gate patterns corresponding to the plurality of thin film transistors, and the channel region is an overlapping region of an orthographic projection of the gate pattern on the substrate and an orthographic projection of the active pattern on the substrate.

[0047] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0048] Acquire a first target structure, the first target structure including a first substrate and a light-emitting unit located on one side of the first substrate; the light-emitting unit including a first electrode, a second electrode, and a light-emitting portion electrically connected to the first electrode and the second electrode respectively;

[0049] Obtaining a second target structure, the second target structure comprising a second substrate, an optical adhesive layer located on one side of the second substrate, a driving unit, and a pin; the optical adhesive layer having a via hole, the pin located within the via hole, and the pin connected to the driving unit; the driving unit comprising a third electrode, a fourth electrode, and a driving circuit, the third electrode and the fourth electrode being electrically connected to the driving circuit respectively;

[0050] Bonding the driving unit and the light-emitting unit together through a bonding process, electrically connecting the third electrode to the first electrode, and electrically connecting the fourth electrode to the second electrode;

[0051] The second substrate and the optical adhesive layer are removed from one side of the driving unit so that the pin protrudes from the side of the driving unit away from the light-emitting unit, and the end surface of the pin away from the driving unit is a plane.

[0052] Optionally, the thickness of the optical adhesive layer ranges from 15 microns to 25 microns.

[0053] In another aspect, a display panel is provided, comprising a display backplane, and a plurality of light-emitting components as described in the above aspects arranged in an array on one side of the display backplane;

[0054] The display backplane is used to provide a driving signal to the driving unit through a plurality of pins in the light-emitting component, so that the driving unit drives the light-emitting unit to emit light.

[0055] The beneficial effects of the technical solution provided by this application include at least:

[0056] The present application provides a light-emitting component and a preparation method thereof, and a display panel. The light-emitting component includes a first substrate, a light-emitting unit, a driving unit, and pins arranged in sequence. The light-emitting unit is connected to the driving unit, and the driving unit is connected to the pins, so that the driving unit can receive a driving signal through the pins and control the light-emitting unit to emit light. Since the end face of the pin away from the driving unit is a plane, the pin is not prepared by an electroplating process or a chemical plating process. Therefore, there is no need to place the entire component in a specific solution when preparing the pin, and the specific solution will not be immersed between the electrodes to cause damage to the electrode connection, thereby ensuring the luminous effect of the light-emitting component. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0058] FIG1 is a schematic structural diagram of a light-emitting component provided in an embodiment of the present application;

[0059] FIG2 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0060] FIG3 is a schematic diagram of the structure of a pin provided in an embodiment of the present application;

[0061] FIG4 is a top view of a plurality of pins provided in an embodiment of the present application;

[0062] FIG5 is a schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0063] FIG6 is a top view of another embodiment of the present application provided by a plurality of pins;

[0064] FIG7 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0065] FIG8 is a schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0066] FIG9 is a top view of another embodiment of the present application provided by a plurality of pins;

[0067] FIG10 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0068] FIG11 is a schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0069] FIG12 is a top view of a plurality of pins provided in another embodiment of the present application;

[0070] FIG13 is a schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0071] FIG14 is a top view of a plurality of pins provided in another embodiment of the present application;

[0072] FIG15 is a schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0073] FIG16 is a top view of a plurality of pins provided in another embodiment of the present application;

[0074] FIG17 is a schematic structural diagram of a first substrate and a light-emitting unit provided in an embodiment of the present application;

[0075] FIG18 is a schematic structural diagram of another first substrate and a light-emitting unit provided in an embodiment of the present application;

[0076] FIG19 is a schematic structural diagram of a driving unit provided in an embodiment of the present application;

[0077] FIG20 is a flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application;

[0078] FIG21 is a flowchart of a method for obtaining a first target structure provided by an embodiment of the present application;

[0079] FIG22 is a schematic diagram of forming a color filter layer and a color conversion layer according to an embodiment of the present application;

[0080] FIG23 is a schematic diagram of forming an adhesive layer and a buffer layer according to an embodiment of the present application;

[0081] FIG24 is a schematic diagram of forming a first doped layer, a multi-quantum well layer, a second doped layer, and a conductive layer according to an embodiment of the present application;

[0082] FIG25 is a schematic diagram of forming a raised electrode according to an embodiment of the present application;

[0083] FIG26 is a schematic diagram of forming an insulating layer according to an embodiment of the present application;

[0084] FIG27 is a schematic structural diagram of a second target structure provided in an embodiment of the present application;

[0085] FIG28 is a flow chart of a method for obtaining a second target structure provided by an embodiment of the present application;

[0086] FIG29 is a schematic diagram of forming an optical adhesive layer according to an embodiment of the present application;

[0087] FIG30 is a schematic diagram of forming a conductive material in a via hole of an optical adhesive layer according to an embodiment of the present application;

[0088] FIG31 is a schematic diagram of forming a substrate and a buffer insulating layer provided in an embodiment of the present application;

[0089] FIG32 is a schematic diagram of forming a conductive material in a via hole formed in a substrate and a buffer insulating layer according to an embodiment of the present application;

[0090] 33 is a schematic diagram of forming an active layer, a first gate insulating layer, a gate layer, an interlayer dielectric layer, a source and drain electrode layer, and a planarization layer according to an embodiment of the present application;

[0091] FIG34 is a schematic diagram of bonding a driving unit and a light-emitting unit according to an embodiment of the present application;

[0092] FIG35 is a schematic diagram of removing a second substrate from one side of an optical adhesive layer according to an embodiment of the present application;

[0093] FIG36 is a schematic diagram of removing the second substrate by laser lift-off according to an embodiment of the present application;

[0094] FIG37 is a schematic diagram of removing the second substrate by using a chemical solution etching method according to an embodiment of the present application;

[0095] FIG38 is a schematic diagram of removing an optical adhesive layer from one side of a driving circuit according to an embodiment of the present application;

[0096] FIG39 is a schematic diagram of a plurality of light-emitting units included in a plurality of light-emitting assemblies provided in an embodiment of the present application;

[0097] FIG40 is a schematic diagram of a driving unit included in a plurality of light-emitting assemblies provided in an embodiment of the present application;

[0098] FIG41 is a schematic diagram of bonding a plurality of light-emitting units and a driving unit according to an embodiment of the present application;

[0099] FIG42 is a schematic structural diagram of a display panel provided in an embodiment of the present application;

[0100] Figure 43 is a top view of a display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0101] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0102] A micro light emitting diode (Micro LED) display panel generally includes a display backplane, a driving unit integrated on the display backplane, and a light-emitting chip bonded to the driving unit. When preparing the Micro LED display panel, in order to achieve color display, light-emitting chips of different colors need to be transferred and bonded to the display backplane integrated with the driving unit. In addition, light-emitting chips of the same color are transferred at the same time, and light-emitting chips of different colors are transferred in batches. That is, the number of transfers is the number of colors of the light-emitting chip. Optionally, the light-emitting chip includes light-emitting chips of three colors, such as a red (red, R) light-emitting chip, a green (green, G) light-emitting chip, and a blue (blue) light-emitting chip, and thus three transfers are required. This solution requires more transfers when preparing the Micro LED display panel, and the process is more complicated.

[0103] Furthermore, to reduce the manufacturing cost of Micro LED display panels, the display backplane is designed to be small (because if it is too large, if some of the light-emitting chips fail to emit light after transfer, the entire product will be scrapped, resulting in high costs). Therefore, if a large-size display is required, it can only be achieved through splicing, which results in poor display quality.

[0104] The red, green and blue micro display chip (RGB Micro LED) is bonded to the driving unit to form a new active-matrix light-emitting diode (AM-LED) chip with its own driving circuit. The AM-LED chip includes light-emitting chips of three colors, red, green and blue, and a driving unit for driving the light-emitting chip. Furthermore, depending on the size of the display panel that needs to be prepared, a corresponding number of AM-LED chips are used to perform one-time transfer bonding with the display backplane to realize the preparation of a glass-based color light-emitting diode (LED) display panel. At the same time, this solution only requires one transfer process, and the process is relatively simple. In addition, large-size display can be achieved without splicing, which can improve the glass utilization rate of the display backplane, thereby reducing costs.

[0105] Furthermore, the AM-LED chip utilizes dual electrical and optical testing technology to select chips that meet both optical and driving performance requirements. This improves chip yield on the display panel and facilitates repair and replacement of defective chips, compared to solutions that integrate the driver circuitry onto the display backplane to form the display panel.

[0106] However, before bonding the AM-LED chip to the display backplane, bonding bumps must be fabricated on the AM-LED chip. These bumps are typically prepared using electroplating or chemical plating. Because the AM-LED chip must be immersed in a specific solution during electroplating or chemical plating, the electrodes between the AM-LED chip and the driver unit come into contact with the solution, potentially causing short circuits, disconnection, or device failure.

[0107] FIG1 is a schematic diagram of the structure of a light emitting assembly provided in an embodiment of the present application. Referring to FIG1 , it can be seen that the light emitting assembly 10 includes: a light emitting unit 101 , a driving unit 102 , a first substrate 103 and pins 104 .

[0108] The light-emitting unit 101 includes a first electrode 1011 , a second electrode 1012 , and a light-emitting portion 1013 electrically connected to the first electrode 1011 and the second electrode 1012 .

[0109] The driving unit 102 includes a third electrode 1021, a fourth electrode 1022, and a driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 are both located on the side of the driving unit 102 facing the light-emitting unit 101, i.e., the third electrode 1021 and the fourth electrode 1022 are closer to the light-emitting unit 101 than the driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 are respectively electrically connected to the driving circuit 1023. The third electrode 1021 is electrically connected to the first electrode 1011, and the fourth electrode 1022 is electrically connected to the second electrode 1012.

[0110] The first substrate 103 is located on a side of the light emitting unit 101 away from the driving unit 102, that is, the light emitting unit 101 is closer to the first substrate 103 than the driving unit 102. The first substrate 103 may be a substrate that supports the light emitting unit 101.

[0111] The pin 104 is located on a side of the driving unit 102 away from the light emitting unit 101 , and the pin 104 is connected to the driving unit 102 . An end surface m of the pin 104 away from the driving unit 102 is a plane.

[0112] In the embodiment of the present application, the end surface m of the pin 104 on the side away from the driver unit 102 is flat, so the pin 104 is not produced using an electroplating or chemical plating process. This eliminates the need to place the entire assembly in a specific solution when producing the pin 104. Furthermore, this solution does not seep into the electrodes, potentially damaging the electrode connection. The luminous effect of the light-emitting assembly 10 can be maintained.

[0113] Optionally, the process of preparing the pin 104 may include: etching an optical adhesive (PR) layer (the optical adhesive layer is located on the side of the driver unit 102 away from the light-emitting unit 101) to form a via hole; depositing a conductive material (e.g., metal) in the via hole; and removing the optical adhesive layer to obtain a pin 104 located on the side of the driver unit 102 away from the light-emitting unit 101 and protruding from the surface of the driver unit 102. The main feature of the pin 104 prepared using this method is that the end surface of the pin 104 on the side away from the driver unit 102 is flat.

[0114] In the embodiment of the present application, the pin 104 included in the light-emitting component 10 can be used to receive a driving signal provided by the display backplane, so that the pin 104 can provide a driving signal to the driving unit 102, so that the driving unit 102 drives the light-emitting unit 101 to emit light.

[0115] In summary, an embodiment of the present application provides a light-emitting component, which includes a first substrate, a light-emitting unit, a driving unit and a pin arranged in sequence. The light-emitting unit is connected to the driving unit, and the driving unit is connected to the pin, so that the driving unit can receive a driving signal through the pin and control the light-emitting unit to emit light. Since the end face of the pin away from the driving unit is a plane, the pin is not prepared by an electroplating process or a chemical plating process. Therefore, there is no need to place the entire component in a specific solution when preparing the pin, and the specific solution will not be immersed between the electrodes to cause damage to the electrode connection, which can ensure the luminous effect of the light-emitting component.

[0116] In the embodiment of the present application, the material of the pins 104 can include a conductive material, such as a metal. Specifically, the material of the pins 104 can include copper (Cu). The pins 104 are prepared by first punching a photoresist layer to form vias, and then forming a conductive material within the vias of the optical adhesive layer. This conductive material then forms the pins 104 included in the light-emitting component 10. Because this method does not require the entire component to be placed in a specific solution, it can solve the problem of solution immersion in the electrodes, causing damage to the electrode connection or device failure.

[0117] In the embodiment of the present application, referring to FIG2 , the drive unit 102 includes a substrate 1024, and a drive circuit 1023 is located on one side of the substrate 1024. The substrate 1024 has a target surface 1024a on a side remote from the drive circuit 1023. The pins 104 are located on a side of the substrate 1024 remote from the drive unit 102, and the end surfaces of the pins 104 on the side remote from the substrate 1024 are parallel to the target surface 1024a.

[0118] Alternatively, "parallel" can be used to indicate completely parallel or approximately parallel due to process errors. For example, "approximately" means that a certain error range is allowed, and two surfaces being approximately parallel can mean that the angle between the two surfaces is between 0 degrees and 10 degrees.

[0119] In the embodiment of the present application, the drive unit 102 includes a substrate 1024 having a target surface 1024a on a side facing away from the light-emitting unit 101. The portion of the pin 104 protruding from the target surface 1024a is shaped like a prism, a truncated pyramid, a cylinder, or a frustum. The shape of the portion of the pin 104 protruding from the target surface 1024a is related to the shape of the vias etched into the optical adhesive layer and the accuracy of the etching process.

[0120] In the embodiment of the present application, the light-emitting component 10 may generate a certain amount of heat during the light-emitting process, and part of the surface of the pin 104 is exposed to the outside, so it can play a certain role in heat dissipation.

[0121] Optionally, the light emitting assembly 10 can generate heat convection with the medium in the external environment during the heat dissipation process. The greater the heat transfer of the light emitting assembly 10 relative to the external environment (the medium in the external environment is usually air), the better the heat dissipation effect. The heat transfer amount q of the heat convection satisfies: q = h × (T1-T2) × S Formula (1)

[0122] Where h is the heat transfer coefficient of the medium in the external environment, T1 is the internal temperature of the light emitting component 10, T2 is the temperature of the external environment, and S is the contact area between the light emitting component 10 and the external environment. If the medium in the external environment is air, the heat transfer coefficient h = 5W / (m 2 ·K)(W / (m2·K)).

[0123] Referring to the above formula (1), it can be seen that the heat transfer amount q of heat convection is positively correlated with the contact area S. Therefore, in order to improve the heat dissipation effect of the light-emitting component 10, the contact area S can be increased as much as possible.

[0124] As an optional implementation, referring to FIG3 , the portion of the pin 104 protruding from the target surface 1024a is shaped like a prism (e.g., a quadrangular prism). The prism has a top surface m2 proximal to the target surface 1024a and a bottom surface m1 distal to the target surface 1024a. The bottom surface m1 is the end surface m1 of the pin 104 distal to the substrate 1024. The prism also has a plurality of rectangular side surfaces m3. A prism can be understood as a rectangular cross-section passing through the central axis of the prism, with the central axis being perpendicular to the target surface 1024a of the substrate 1024.

[0125] In the embodiment of the present application, the relationship between the length W1 of the first side of the rectangular side m3 and the length H1 of the second side of the rectangular side m3 satisfies: W1 = k1 × H1. The length W1 of the first side of the rectangular side m3 can be the length and width of the pin 104 (prism), and the length H1 of the second side of the rectangular side m3 can be the height of the pin 104 (prism). In other words, the length (or width) W1 of the pin 104 is proportional to the height H1 of the pin 104. Optionally, the value range of k1 is 1.5 to 2.5.

[0126] 4 , taking the light emitting component 10 including 9 pins 104 as an example, it is determined that the contact area S1 between the light emitting component 10 and the external environment satisfies: S1 = L 2 -W1 2 ×9+4×H1×W1×9 formula (2)

[0127] Wherein, L in the above formula (2) is the length and width of the light emitting component 10, W1 is the length and width of the pin 104 (prism), and H1 is the height of the pin 104 (prism). 2 Used to represent the area of ​​the light emitting component 10, W1 2 It is used to represent the area of ​​the top surface m2 or the bottom surface m1 of each pin 104, 4×H1×W1 is used to represent the sum of the areas of the four rectangular side surfaces m3 of each pyramid, and 4×H1×W1×9 is used to represent the sum of the areas of the four rectangular side surfaces m3 of 9 pyramids.

[0128] According to the above formula (2), we can get: S1=L 2 -9×(W1-2×H1) 2 +4×H1 2 ×9 Formula (3)

[0129] According to formula (3), the larger the height H1 of pin 104 (prism), the larger the contact area S1. When W1 = 2 × H1 (i.e., k1 = 2), contact area S1 is maximized, resulting in optimal heat dissipation. Therefore, to maximize contact area S1, the following conditions must be met: W1 = k1 × H1, k1 = 2. This means: W1 = 2 × H1. Furthermore, since the values ​​within the aforementioned k1 range are not significantly different from the value that achieves the best heat dissipation (k1 = 2), the values ​​within the aforementioned k1 range can also achieve a certain heat dissipation effect.

[0130] It should be noted that the height H1 of the pins 104 depends on the thickness of the optical adhesive layer (the height H1 of the pins 104 is equal to the thickness of the optical adhesive layer). Furthermore, the thicker the optical adhesive layer, the better the support performance for other structures in the light-emitting assembly 10. However, due to limitations such as process capabilities, the thickness of the optical adhesive layer cannot be made too thick.

[0131] Furthermore, the pressure P on the substrate 1024 in the driving unit 102 satisfies: P = F / M, where F is the force exerted on the substrate 1024 by other structures in the light-emitting component 10, and M is the contact area between the pin 104 and the substrate 1024, that is, the area of ​​the top surface m2 of the pin 104. Where M = 9 × W1 2 According to the pressure P formula, when the length and width W1 of the pin 104 (prism) are small, the pressure P on the substrate 1024 is greater. In other words, a smaller length and width W1 of the pin 104 (prism) inevitably leads to an increase in the pressure on the substrate 1024. A larger length and width W1 of the pin 104 (prism) inevitably leads to a decrease in the pressure on the substrate 1024.

[0132] Therefore, to reduce the pressure, the length and width W1 of the pins 104 (prisms) can be increased as much as possible. However, to ensure that the pins 104 can accurately transmit signals, a certain gap must be left between adjacent pins 104. For example, the gap between adjacent pins 104 needs to be greater than 10 μm.

[0133] For example, if the length and width L of a light-emitting component 10 are 200 μm (micrometers), and each light-emitting component 10 includes nine pins 104 arranged in three rows and three columns, the length and width W1 of the pins 104 range from 30 μm to 50 μm. If both the length and width of the pins 104 are 50 μm, the distance between adjacent pins 104 is (200 - 3 × 50) ÷ 4 = 12.5 μm. This distance is greater than 10 μm, ensuring the reliability of signal transmission by the pins 104.

[0134] Furthermore, to maximize contact area S1, the height H1 of pin 104 can be set to be equal to W1 / 2, i.e., the height H1 of pin 104 is in the range of 15 μm to 25 μm. The height H1 of pin 104 is equal to the distance between the top surface m2 and the bottom surface m1 of pin 104, i.e., the distance between the end surface of pin 104 facing away from substrate 1024 and target surface 1024a.

[0135] In the embodiment of the present application, W1 may also be the length of the first side of the rectangular side m3 of the prism, and H1 may also be the length of the second side of the rectangular side m3 of the prism. The first side is the side of the rectangular side m3 close to the top surface m2, and the second side is the side of the rectangular side m3 located between the top surface m2 and the bottom surface m1.

[0136] As a second optional implementation, referring to FIG5 , the portion of the pin 104 protruding from the target surface 1024a is shaped like a truncated pyramid (e.g., a quadrangular pyramid). The truncated pyramid has a top surface m2 on the side close to the target surface 1024a and a bottom surface m1 on the side away from the target surface 1024a. The bottom surface m1 is the end surface m1 of the pin 104 away from the substrate 1024. The truncated pyramid also has a plurality of trapezoidal side surfaces m3. The truncated pyramid can be understood as a trapezoidal shape in a cross-section parallel to the central axis of the prism, with the central axis perpendicular to the target surface 1024a of the substrate 1024.

[0137] In this embodiment of the present application, the relationship between the length W2 of the upper base of the trapezoidal side m3 and the height H2 of the pyramid satisfies the following equation: W2 = k2 × H2. The length of the upper base of the trapezoidal side m3 is less than the length of the lower base of the trapezoidal side, and the height H2 of the pyramid is equal to the distance between the top surface m2 and the bottom surface m1. In other words, the length W2 of the upper base of the pin 104 is proportional to the height H2 of the pyramid. Optionally, the value of k2 ranges from 1.5 to 2.5.

[0138] 6 , taking the light emitting component 10 including 9 pins 104 as an example, it is determined that the contact area S2 between the light emitting component 10 and the external environment satisfies: S2 = L 2 -Wj 2 ×9+4×Ht×(W2+W3) / 2×9 Formula (4)

[0139] Wherein, L in the above formula (4) is the length and width of the light emitting component 10, Wj is the length and width of the top surface m2 of the pin 104 (prism), Ht is the height of the trapezoidal side m3 (not the height of the pin 104). W2 is the length of the upper base of the trapezoidal side m3, W3 is the length of the lower base of the trapezoidal side m3, and W2 <W3。L 2 Used to represent the area of ​​the light emitting component 10, Wj 2 It is used to represent the area of ​​the top surface m2 of each pin 104, Ht×(W2+W3) / 2 is used to represent the area of ​​a trapezoidal side m3, 4×Ht×(W2+W3) / 2 is used to represent the sum of the areas of the four trapezoidal sides m3 of each prism, and 4×Ht×(W2+W3) / 2×9 is used to represent the sum of the areas of the four trapezoidal sides m3 of 9 prisms.

[0140] In this solution, to simplify the manufacturing process, the following conditions are met: W2 = k2 × H2, k2 = 2. That is, W2 = 2 × H2. H2 is the height of pin 104 (a pyramid). In other words, when the portion of pin 104 protruding from target surface 1024a is a pyramid, the height design of pin 104 can be the same as when it is a prism. Furthermore, since the values ​​within the aforementioned k2 range are not significantly different from the value that achieves the best heat dissipation (k2 = 2), each value within the aforementioned k2 range can achieve a certain heat dissipation effect.

[0141] In Option 1 (a regular trapezoidal design), referring to Figures 5 to 7 , the area of ​​the orthographic projection of the top surface m2 on the substrate 1024 is smaller than the area of ​​the orthographic projection of the bottom surface m1 on the substrate 1024. Furthermore, the orthographic projection of the top surface m2 on the substrate 1024 lies within the orthographic projection of the bottom surface m1 on the substrate 1024. The upper base of the trapezoidal side surface m3 of the prism is closer to the substrate 1024 than the lower base of the trapezoidal side surface m3. That is, the upper base of the trapezoidal side surface m3 of the prism is equal to the length or width of the top surface m2 of the prism, and the lower base of the trapezoidal side surface m3 of the prism is equal to the length or width of the bottom surface m1 of the prism.

[0142] Assume that the area of ​​the top surface m2 of the pyramid is Wj 2 (W2 2 ) and the area W1 of the top surface m2 or bottom surface m1 of the prism in the first embodiment described above 2 Under the same conditions, the pressure on the substrate 1024 in the pyramidal case is the same as the pressure on the substrate 1024 in the prism case. Furthermore, according to formulas (2) and (4), it can be seen that the contact area S2 of the pyramidal solution is larger than the contact area S1 of the prism solution, and its heat dissipation effect is better.

[0143] In the second scheme (inverted trapezoidal design), referring to Figures 8 to 10 , the area of ​​the orthographic projection of the top surface m2 on the substrate 1024 is greater than the area of ​​the orthographic projection of the bottom surface m1 on the substrate 1024. Furthermore, the orthographic projection of the bottom surface m1 on the substrate 1024 lies within the orthographic projection of the top surface m2 on the substrate 1024. The upper base of the trapezoidal side surface m3 of the prism is further away from the substrate 1024 than the lower base of the trapezoidal side surface m3. That is, the upper base of the trapezoidal side surface m3 of the prism is equal to the length or width of the bottom surface m1 of the prism, and the lower base of the trapezoidal side surface m3 of the prism is equal to the length or width of the top surface m2 of the prism.

[0144] Assume that the area of ​​the base m1 of the pyramid is W2 2 The area W1 of the top surface m2 or bottom surface m1 of the prism in the first embodiment is 2Under the same conditions, the pressure on the substrate 1024 in the case of the prism is smaller than that in the case of the prism (because the contact area M between the prism and the substrate 1024 is W3 2 , which is larger than the contact area M=W1 between the prism and the substrate 1024 2 ). Moreover, according to formula (2) and formula (4), it can be seen that the contact area S2 of the pyramid scheme is larger than the contact area S1 of the prism scheme, and its heat dissipation effect is better.

[0145] It should be noted that the top surface m2 of the prism in Option 2 (inverted trapezoidal design) is larger than that in Option 1 (normal trapezoidal design), resulting in a smaller gap between adjacent pins 104. Therefore, Option 2 (inverted trapezoidal design) may pose a risk of direct contact between adjacent pins 104 due to the smaller distance compared to Option 1 (normal trapezoidal design). However, it is sufficient to ensure that the gap between adjacent pins 104 is greater than the required gap, for example, greater than 10μm.

[0146] As a third optional implementation, referring to FIG11 , the portion of the pin 104 protruding from the target surface 1024a is shaped like a cylinder. The cylinder has a side surface m3, a top surface m2 proximal to the target surface 1024a, and a bottom surface m1 distal to the target surface 1024a. The bottom surface m1 is the end surface of the pin 104 distal to the substrate 1024. A cylinder can be understood as a cylinder having a circular shape in any cross-section parallel to the target surface 1024a, and a rectangular shape in any cross-section passing through the central axis of the cylinder, with the central axis perpendicular to the target surface 1024a.

[0147] In this embodiment of the present application, the relationship between the diameter W4 of the top surface m2 or bottom surface m1 of the cylinder and the height H4 of the cylinder satisfies the following equation: W4 = k4 × H4. The height H4 of the cylinder is equal to the distance between the top surface m2 and the bottom surface m1. In other words, the diameter of the top surface m2 or bottom surface m1 of the pin 104 is proportional to the height H4 of the pin 104. Optionally, the value of k4 ranges from 1.5 to 2.5.

[0148] 12 , taking the light emitting component 10 including 9 pins 104 as an example, it is determined that the contact area S3 between the light emitting component 10 and the external environment satisfies: S3 = L 2 -π / 4×W4 2 ×9+π×W4×H4×9 formula (5)

[0149] Wherein, L in the above formula (5) is the length and width of the light emitting component 10, W4 is the diameter of the top surface m2 or bottom surface m1 of the pin 104 (cylinder), and H4 is the height of the pin 104 (cylinder). 2Used to represent the area of ​​the light emitting component 10, π / 4×W4 2 Used to represent the area of ​​the top surface m2 or the bottom surface m1 of each pin 104, π / 4×W4 2 ×9 is used to represent the sum of the areas of the top surfaces m2 or bottom surfaces m1 of the nine pins 104 , π×W4×H4 is used to represent the area of ​​the side surfaces m3 of each pin 104 , and π×W4×H4×9 is used to represent the sum of the areas of the side surfaces m3 of the nine pins 104 .

[0150] According to the above formula (5), we can get: S3=L 2 -π / 4×9(W4-2×H4) 2 +π×H4 2 ×9 Formula (6)

[0151] According to formula (6), the larger the height H4 of pin 104 (cylinder), the larger the contact area S3. When W4 = 2 × H4 (i.e., k4 = 2), the contact area S3 is maximized, resulting in optimal heat dissipation. Therefore, in order to maximize the contact area S1, the following conditions must be met: W4 = k4 × H4, k4 = 2. In other words, W4 = 2 × H4. Furthermore, since the values ​​within the aforementioned k4 range are not significantly different from the value with the best heat dissipation effect (k4 = 2), the values ​​within the aforementioned k4 range can also achieve a certain heat dissipation effect.

[0152] It should be noted that the height H4 of the pins 104 depends on the thickness of the optical adhesive layer (the height H4 of the pins 104 is equal to the thickness of the optical adhesive layer), and the thicker the optical adhesive layer, the better the support performance for other structures in the light-emitting component 10. However, due to limitations of factors such as process capabilities, the thickness of the optical adhesive layer cannot be made too thick.

[0153] Furthermore, the pressure P on the substrate 1024 in the driving unit 102 satisfies: P = F / M, where F is the force exerted on the substrate 1024 by other structures in the light-emitting component 10, and M is the contact area between the pin 104 and the substrate 1024, that is, the area of ​​the top surface m2 of the pin 104. Where M = 9 × W4 2 / 4. According to the pressure P formula, when the diameter W4 of the pin 104 (cylinder) is smaller, the pressure P on the substrate 1024 is greater. In other words, a smaller diameter W4 of the pin 104 (cylinder) inevitably leads to an increase in the pressure on the substrate 1024. A larger length and width W4 of the pin 104 (cylinder) inevitably leads to a decrease in the pressure on the substrate 1024.

[0154] Therefore, to reduce the pressure, the diameter W4 of the pin 104 (cylinder) can be increased as much as possible. However, to ensure that the pin 104 can accurately transmit signals, a certain gap must be left between adjacent pins 104. For example, the gap between adjacent pins 104 needs to be greater than 10 μm.

[0155] For example, if the length and width L of a light-emitting component 10 are 200 μm (micrometers), and each light-emitting component 10 includes nine pins 104 arranged in three rows and three columns, the diameter W4 of the pins 104 ranges from 30 μm to 50 μm. If the diameter of the pins 104 is 50 μm, the distance between adjacent pins 104 is (200 - 3 × 50) ÷ 4 = 12.5 μm. This distance is greater than 10 μm, ensuring the reliability of signal transmission by the pins 104.

[0156] Furthermore, to maximize the contact area S3, the height H4 of the pin 104 can be set to W4 / 2, i.e., the height H4 of the pin 104 is in the range of 15 μm to 25 μm. The height H4 of the pin 104 is equal to the distance between the top surface m2 and the bottom surface m1 of the pin 104, i.e., the distance between the end surface of the pin 104 facing away from the substrate 1024 and the target surface 1024a.

[0157] As a fourth optional implementation, referring to FIG13 , the portion of the pin 104 protruding from the target surface 1024a is shaped like a truncated cone. The truncated cone has a side surface m3, a top surface m2 proximal to the target surface 1024a, and a bottom surface m1 distal to the target surface 1024a. The bottom surface m1 is the end surface of the pin 104 distal to the substrate 1024. A truncated cone can be understood as one in which any cross-section parallel to the target surface 1024a is circular, and a cross-section passing through the central axis of the cone is trapezoidal, with the central axis perpendicular to the target surface 1024a.

[0158] In the embodiment of the present application, the diameter of the top surface m2 of the truncated cone is different from the diameter of the bottom surface m1, and the relationship between the smaller diameter W5 of the top surface m2 and the bottom surface m1 and the height H5 of the truncated cone satisfies: W5 = k5 × H5. The height H5 of the truncated cone is equal to the distance between the top surface m2 and the bottom surface m1. In other words, the smaller diameter W5 of the top surface m2 and the bottom surface m1 of the pin 104 is proportional to the height H5 of the truncated cone. Optionally, the value of k5 ranges from 1.5 to 2.5.

[0159] 14 , taking the light emitting component 10 including 9 pins 104 as an example, it is determined that the contact area S4 between the light emitting component 10 and the external environment satisfies: S4 = L 2 -π / 4×Wi 2 ×9+π×Ha×(W5+W6) / 2×9 Formula (7)

[0160] Wherein, L in the above formula (7) is the length and width of the light emitting component 10, Wi is the diameter of the top surface m2 of the pin 104 (the cone), Ha is the height of the side m3 (here ha is not the height of the pin 104). W5 is the diameter of the upper base of the cone, W6 is the diameter of the lower base of the cone, and W5 <W6。L 2 Used to represent the area of ​​the light emitting component 10, π / 4×Wi 2 Used to represent the area of ​​the top surface m2 of each pin 104, π / 4×Wi 2 ×9 is used to represent the area of ​​the top surface m2 of the nine pins 104, π×Ha×(W5+W6) / 2 is used to represent the area of ​​the side surface m3 of a frustum, and π×Ha×(W5+W6) / 2×9 is used to represent the sum of the side surface m3 areas of the nine frustums.

[0161] In this solution, to simplify the manufacturing process, the following conditions are met: W5 = k5 × H5, k5 = 2. That is, W5 = 2 × H5. H5 is the height of pin 104 (a frustum). In other words, when the portion of pin 104 protruding from target surface 1024a is shaped like a frustum, the height design of pin 104 can be the same as when it is cylindrical. Furthermore, since the values ​​within the aforementioned k5 range are not significantly different from the value that achieves the best heat dissipation (k5 = 2), the values ​​within the aforementioned k2 range can also achieve a certain heat dissipation effect.

[0162] Solution 1 (correct truncated cone design), referring to Figures 13 and 14, the area of ​​the orthographic projection of the top surface m2 on the substrate 1024 is smaller than the area of ​​the orthographic projection of the bottom surface m1 on the substrate 1024. Moreover, the orthographic projection of the top surface m2 on the substrate 1024 is located within the orthographic projection of the bottom surface m1 on the substrate 1024. The upper base of the truncated cone is closer to the substrate 1024 than the lower base of the truncated cone, and the area of ​​the upper base of the truncated cone is smaller than the area of ​​the lower base of the truncated cone. That is, the diameter of the upper base of the truncated cone is equal to the diameter of the top surface m2 of the truncated cone, and the diameter of the lower base of the truncated cone is equal to the diameter of the bottom surface m1 of the truncated cone.

[0163] Assume that the area of ​​the top surface m2 of the truncated cone is π / 4×Wi 2 (π / 4×W5 2 ) and the area of ​​the top surface m2 or bottom surface m1 of the cylinder in the third implementation method above π / 4×W4 2 Under the same conditions, the pressure on the substrate 1024 in the truncated cone case is the same as the pressure on the substrate 1024 in the cylindrical case. Furthermore, according to formulas (5) and (7), it can be seen that the contact area S4 of the truncated cone solution is larger than the contact area S3 of the cylindrical solution, and its heat dissipation effect is better.

[0164] In the second scheme (inverted frustum design), referring to Figures 15 and 16 , the area of ​​the orthographic projection of the top surface m2 on the substrate 1024 is larger than the area of ​​the orthographic projection of the bottom surface m1 on the substrate 1024. Furthermore, the orthographic projection of the bottom surface m1 on the substrate 1024 lies within the orthographic projection of the top surface m2 on the substrate 1024. The upper base of the frustum is further away from the substrate 1024 than the lower base of the frustum. That is, the diameter of the upper base of the frustum is equal to the diameter of the bottom surface m1, and the diameter of the lower base of the frustum is equal to the diameter of the top surface m2.

[0165] Assume that the area of ​​the bottom surface m1 of the truncated cone is π / 4×W5 2 The area of ​​the top surface m2 or bottom surface m1 of the cylinder in the third implementation is π / 4×W4 2 Under the same conditions, the pressure on the substrate 1024 in the case of a truncated cone is smaller than that in the case of a cylindrical cone (because the contact area between the truncated cone and the substrate 1024 is M = π / 4×W6 2 , which is larger than the contact area between the cylinder and the substrate 1024 M = π / 4 × W4 2 ). Moreover, according to formula (5) and formula (7), it can be seen that the contact area S4 of the frustum solution is larger than the contact area S3 of the cylinder solution, and its heat dissipation effect is better.

[0166] It should be noted that in Option 2 (inverted frustum design), the top surface m2 of the frustum is larger than in Option 1 (perfect frustum design), resulting in a smaller gap between adjacent pins 104. Therefore, Option 2 (inverted frustum design) may pose a risk of direct contact between adjacent pins 104 due to the smaller distance compared to Option 1 (perfect frustum design). However, it is sufficient to ensure that the gap between adjacent pins 104 is greater than the required gap, for example, greater than 10μm.

[0167] According to the above four implementations, it can be seen that the prism design has a better heat dissipation effect than the prism design, and the frustum design has a better heat dissipation effect than the cylinder design. Therefore, the portion of the pin 104 protruding from the target surface 1024a can be in the shape of a prism or a frustum.

[0168] Alternatively, if the portion of the pin 104 protruding from the target surface 1024a is shaped like a truncated pyramid, a right trapezoidal design provides a larger gap between the pins 104 than an inverted trapezoidal design, thereby preventing damage to adjacent pins 104 from direct contact. Furthermore, if the portion of the pin 104 protruding from the target surface 1024a is shaped like a truncated cone, a right truncated cone design provides a larger gap between the pins 104 than an inverted truncated cone design, thereby preventing damage to adjacent pins 104 from direct contact.

[0169] Thus, further, the portion of the pin 104 protruding from the target surface 1024a may be shaped as a right prism or a right truncated cone. That is, the area of ​​the portion of the pin 104 protruding from the target surface 1024a in a cross section parallel to the target surface 1024a increases as the distance between the cross section and the target surface 1024a increases.

[0170] 1 , 2 , 7 , and 10 , the first electrode 1011 and the second electrode 1012 included in the light-emitting unit 101 are both located between the light-emitting portion 1013 and the driving circuit 1023. The materials of the first electrode 1011 and the second electrode 1012 both include metal. For example, there is a gap between the driving circuit 1023 and the light-emitting portion 1013, and the first electrode 1011 and the second electrode 1012 are both located within the gap and in direct contact with the gas in the gap. That is, in the embodiment of the present application, the first electrode 1011 and the second electrode 1012 are spaced apart and insulated from each other by the gas in the gap, thereby preventing damage to the connection between the first electrode 1011 and the second electrode 1012.

[0171] Furthermore, the third electrode 1021 and the fourth electrode 1022 included in the driving unit 102 are also located between the light-emitting portion 1013 and the driving circuit 1023. The materials of the third electrode 1021 and the fourth electrode 1022 also include metal. The third electrode 1021 and the fourth electrode 1022 are both located in the gap and are in direct contact with the gas in the gap. That is, the third electrode 1021 and the fourth electrode 1022 are spaced apart and insulated from each other by the gas in the gap, thereby preventing the third electrode 1021 and the fourth electrode 1022 from being damaged due to connection. Optionally, the gas in the gap between the driving circuit 1023 and the light-emitting portion 1013 can be air.

[0172] In the embodiment of the present application, the light-emitting assembly 10 includes a plurality of light-emitting units 101 and a driving unit 102 corresponding to the plurality of light-emitting units 101. The driving unit 102 may include a plurality of driving circuits 1023 corresponding to the plurality of light-emitting units 101. Each driving circuit 1023 in the driving unit 102 may be used to drive a corresponding light-emitting unit 101 to emit light, and some film layers in the plurality of driving circuits 1023 may be shared film layers.

[0173] Optionally, the plurality of light-emitting units 101 include light-emitting units of a first color, light-emitting units of a second color, and light-emitting units of a third color. The first color, the second color, and the third color are different from each other. For example, the first color is red (red, R), the second color is green (green, G), and the third color is blue (blue, B).

[0174] FIG17 is a schematic diagram of the structure of a light-emitting unit provided in an embodiment of the present application. Referring to FIG17 , it can be seen that the light-emitting unit 101 includes: a color filter layer 1014 , a color conversion layer 1015 , and a light-emitting layer 1016 stacked in sequence in a direction away from the first substrate 103 .

[0175] The light emitting layer 1016 emits blue light. Referring to FIG18 , the light emitting layer 1016 includes a first doped layer 10161, a multi-quantum well layer 10612, and a second doped layer 10163 arranged in a stacked manner. The first doped layer 10161 is electrically connected to the first electrode 1011, and the second doped layer 10163 is electrically connected to the second electrode 1012. For example, the first doped layer 10161 may be an N-type doped layer, and the second doped layer 10163 may be a P-type doped layer. Accordingly, the first electrode 1011 may be referred to as an N-type electrode, and the second electrode 1012 may be referred to as a P-type electrode. Optionally, the material of the first doped layer 10161 may be N-type gallium nitride (GaN), denoted as N-GaN. The material of the second doped layer 10163 may be P-type GaN, denoted as P-GaN.

[0176] Furthermore, the light-emitting layer 1016 includes a first light-emitting portion, a second light-emitting portion, and a third light-emitting portion. That is, the first light-emitting portion, the second light-emitting portion, and the third light-emitting portion all emit blue light. FIG18 illustrates only one light-emitting portion.

[0177] The color conversion layer 1015 includes a first color conversion portion, a second color conversion portion, and a transparent portion. Figure 18 shows only one color conversion portion 10151. The orthographic projection of the first color conversion portion on the first substrate 103 overlaps with the orthographic projection of the first light-emitting portion 1013 on the first substrate 103. The first color conversion portion is used to convert the light emitted by the first light-emitting portion 1013 into a color corresponding to the first color conversion portion (for example, into red). The orthographic projection of the second color conversion portion on the first substrate 103 overlaps with the orthographic projection of the second light-emitting portion 1013 on the first substrate 103. The second color conversion portion is used to convert the light emitted by the second light-emitting portion 1013 into a color corresponding to the second color conversion portion (for example, into green). The orthographic projection of the third color conversion portion on the first substrate 103 overlaps with the orthographic projection of the transparent portion on the first substrate 103. The transparent portion is used to transmit the light emitted by the third light-emitting portion 1013.

[0178] Optionally, the color conversion layer 1015 further includes a spacer 10152 between any two adjacent structures among the first color conversion portion, the second color conversion portion and the transparent portion. The spacer 10152 is used to distinguish and separate different color conversion portions and transparent portions.

[0179] The color filter layer 1014 includes a first color block, a second color block, a third color block, and a black matrix 10142. FIG18 shows only one color block 10141. The black matrix 10142 is located between adjacent color blocks. The orthographic projection of the first color block on the first substrate 103 overlaps with the orthographic projection of the first color conversion portion on the first substrate 103. The first color block is configured to transmit light of the corresponding color after conversion by the first color conversion portion and block light of other colors. The orthographic projection of the second color block on the first substrate 103 overlaps with the orthographic projection of the second color conversion portion on the first substrate 103. The second color block is configured to transmit light of the corresponding color after conversion by the second color conversion portion and block light of other colors. The orthographic projection of the third color block on the first substrate 103 overlaps with the orthographic projection of the transparent portion on the first substrate 103. The third color block is configured to transmit light of the corresponding color transmitted by the transparent portion and block light of other colors.

[0180] For example, the first color block is a red color block, the second color block is a green color block, and the third color block is a blue color block.

[0181] 18 , the second doped layer 10163 and the multi-quantum well layer 10612 are used to expose the target portion 10161a of the first doped layer 10161. The light emitting layer 1016 further includes a raised electrode 10164, a conductive layer 10165, and an insulating layer 10166.

[0182] The raised electrode 10164 is connected to the target portion 10161a of the first doped layer 10161, the conductive layer 10165 is located on the side of the second doped layer 10163 away from the first substrate 103, and the insulating layer 10166 is located on the side of the raised electrode 10164 and the conductive layer 10165 away from the first substrate 103. The insulating layer 10166 has a first via (N-type via) and a second via (P-type via). The first via is used to expose the raised electrode 10164, and the raised electrode 10164 is connected to the first electrode 1011 through the first via. The second via is used to expose the conductive layer 10165, and the conductive layer 10165 is connected to the second electrode 1012 through the second via. Optionally, the conductive layer 10165 can be made of indium tin oxide (ITO), and the insulating layer 10166 can be a passivation layer (PVX).

[0183] As can be seen from Figures 17 and 18 , the light-emitting unit 101 further includes an adhesive layer 1017 and a buffer layer 1018. Both the adhesive layer 1017 and the buffer layer 1018 are located between the color conversion layer 1015 and the light-emitting layer 1016. The adhesive layer 1017 is used to bond the color conversion layer 1015 and the buffer layer 1018. The buffer layer 1018 can be made of GaN.

[0184] FIG19 is a schematic diagram of the structure of a driving unit provided in an embodiment of the present application. Referring to FIG19 , it can be seen that the driving unit 102 further includes a connection structure 1025. The substrate 1024 included in the driving unit 102 has a connection via, and the connection structure 1025 is located in the connection via.

[0185] 19 , the driving circuit 1023 is located on one side of the substrate 1024, and the driving circuit 1023 is connected to the connection structure 1025. The pins 104 are located on the side of the substrate 1024 away from the driving circuit 1023, and the pins 104 are in contact with the connection structure 1025. In other words, the side of the pins 104 closer to the driving unit 102 is connected to the driving circuit 1023 via the connection structure 1025, thereby allowing the pins 104 to transmit driving signals to the driving circuit 1023 via the connection structure 1025.

[0186] Optionally, the cross-sectional area of ​​the connection structure 1025 in a direction perpendicular to the thickness of the substrate 1024 gradually changes as the distance from the driving circuit 1023 increases.

[0187] 19 , the cross-sectional area of ​​the connection structure 1025 in a direction perpendicular to the thickness of the substrate 1024 gradually decreases as the distance from the drive circuit 1023 increases. In other words, the area of ​​the side of the connection structure 1025 close to the drive circuit 1023 is larger than the area of ​​the side of the connection structure 1025 close to the pin 104. Furthermore, the projection of the side of the connection structure 1025 close to the pin 104 is located within the projection of the side of the connection structure 1025 close to the drive circuit 1023.

[0188] Alternatively, the cross-sectional area of ​​the connection structure 1025 in a direction perpendicular to the thickness of the substrate 1024 gradually increases as the distance from the drive circuit 1023 increases. In other words, the area of ​​the side of the connection structure 1025 close to the drive circuit 1023 is smaller than the area of ​​the side of the connection structure 1025 close to the pin 104. Furthermore, the projection of the side of the connection structure 1025 close to the drive circuit 1023 is located within the projection of the side of the connection structure 1025 close to the pin 104. The embodiment of the present application does not limit the structure of the connection structure 1025.

[0189] In the embodiment of the present application, the driving circuit 1023 may include multiple thin film transistors and at least one storage capacitor. Optionally, the driving circuit 1023 may include seven thin film transistors and one storage capacitor, that is, the driving circuit 1023 is a 7T1C driving circuit. Alternatively, the driving circuit 1023 may include other numbers of thin film transistors and other numbers of storage capacitors. The embodiment of the present application does not limit the number of thin film transistors included in the driving circuit 1023, nor the number of storage capacitors included.

[0190] Each thin film transistor includes a gate, a source, and a drain. The driving circuit 1023 includes multiple thin film transistors that are interconnected to achieve the function of driving the light emitting unit 101 to emit light.

[0191] Optionally, the plurality of thin film transistors include at least a data writing transistor, the source of which is connected to a data line of the display backplane 20 in the display panel. The data line can transmit a data signal to the driving circuit 1023 through the data writing transistor.

[0192] One of the multiple pins 104 included in the light-emitting component 10 is connected to the source of a data writing transistor in a driving circuit 1023, and the data writing transistor is connected to the third electrode 1021 of the driving unit 102 through other thin-film transistors (the connection relationship between the various thin-film transistors is not shown in Figure 19), so that the data line included in the display backplane 20 in the display panel transmits the data signal to the first electrode 1011 of the light-emitting unit 101 through the pin 104, the driving circuit 1023, and the third electrode 1021 in sequence.

[0193] Optionally, the signals transmitted by the nine pins 104 included in the light-emitting component 10 are: a data signal of the driving circuit corresponding to the light-emitting unit of the first color, a data signal of the driving circuit corresponding to the light-emitting unit of the second color, a data signal of the driving circuit corresponding to the light-emitting unit of the third color, a first power supply (VDD) signal, a second power supply (VSS) signal, a reset power supply (vinit) signal, a reset (rst) signal, a gate signal, and an emission control (EM) signal. In other words, in the driving circuits corresponding to the three light-emitting units included in the light-emitting component 10, except for the data signal, other signals can be common signals.

[0194] 19 , the driver circuit 1023 includes a buffer insulating layer n1, an active layer n2, a first gate insulating layer n3, a gate layer n4, a second gate insulating layer n5, a source / drain electrode layer n6, and a planar layer n7, which are stacked in sequence and located on one side of a substrate 1024. The third electrode 1021 and the fourth electrode 1022 included in the driver unit 102 are located on a side of the planar layer n7 away from the substrate 1024.

[0195] The active layer n2 includes multiple active patterns corresponding to multiple thin film transistors. Each active pattern includes a source region, a drain region, and a channel region. The source and drain of the thin film transistor are located in the source-drain layer, and the source of the thin film transistor is connected to the source region, and the drain is connected to the drain region.

[0196] The gate layer n4 includes a plurality of gate patterns corresponding to the plurality of thin film transistors. The channel region is an overlapping region of an orthographic projection of the gate pattern on the substrate 1024 and an orthographic projection of the active pattern on the substrate 1024.

[0197] Referring to Figure 19 , gate layer n4 further includes a gate connection portion m41 connected to connection structure 1025. This gate connection portion m41 is used to connect to connection structure 1025 and the source of the data write transistor. To connect connection structure 1025 and gate connection portion m41, connection vias can also be provided in buffer insulating layer n1 and first gate insulating layer n3. Furthermore, connection structure 1025 is located not only within the connection via in substrate 1024, but also within the connection vias in buffer insulating layer n1 and first gate insulating layer n3.

[0198] In summary, an embodiment of the present application provides a light-emitting component, which includes a first substrate, a light-emitting unit, a driving unit and a pin arranged in sequence. The light-emitting unit is connected to the driving unit, and the driving unit is connected to the pin, so that the driving unit can receive a driving signal through the pin and control the light-emitting unit to emit light. Since the end face of the pin away from the driving unit is a plane, the pin is not prepared by an electroplating process or a chemical plating process. Therefore, there is no need to place the entire component in a specific solution when preparing the pin, and the specific solution will not be immersed between the electrodes to cause damage to the electrode connection, which can ensure the luminous effect of the light-emitting component.

[0199] FIG20 is a flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application. Referring to FIG20 , the method may include:

[0200] Step S101: Acquire a first target structure.

[0201] In the embodiment of the present application, referring to FIG18 , the first target structure includes a first substrate 103 and a light-emitting unit 101 located on one side of the first substrate 103. The light-emitting unit 101 includes a first electrode 1011, a second electrode 1012, and a light-emitting portion 1013 electrically connected to the first electrode 1011 and the second electrode 1012, respectively.

[0202] Referring to FIG21 , the method for acquiring the first target structure includes:

[0203] Step S1011 : forming a color filter layer and a color conversion layer in sequence on one side of a first substrate.

[0204] In an embodiment of the present application, referring to FIG22 , the color conversion layer 1015 includes a first color conversion portion, a second color conversion portion, and a transparent portion. FIG22 illustrates only one color conversion portion 10151. The orthographic projection of the first color conversion portion on the first substrate 103 overlaps with the orthographic projection of the first light-emitting portion 1013 on the first substrate 103. The first color conversion portion is used to convert the light emitted by the first light-emitting portion 1013 into a color corresponding to the first color conversion portion (for example, into red). The orthographic projection of the second color conversion portion on the first substrate 103 overlaps with the orthographic projection of the second light-emitting portion 1013 on the first substrate 103. The second color conversion portion is used to convert the light emitted by the second light-emitting portion 1013 into a color corresponding to the second color conversion portion (for example, into green). The orthographic projection of the third color conversion portion on the first substrate 103 overlaps with the orthographic projection of the transparent portion on the first substrate 103. The transparent portion is used to transmit the light emitted by the third light-emitting portion 1013.

[0205] Optionally, the color conversion layer 1015 further includes a spacer 10152 between any two adjacent structures among the first color conversion portion, the second color conversion portion and the transparent portion. The spacer 10152 is used to distinguish and separate different color conversion portions and transparent portions.

[0206] In an embodiment of the present application, the color filter layer 1014 includes a first color block, a second color block, a third color block and a black matrix 10142. FIG22 shows a color block 10141. The black matrix is ​​located between adjacent color blocks. The orthographic projection of the first color block on the first substrate 103 overlaps with the orthographic projection of the first color conversion portion on the first substrate 103. The first color block is used to transmit the light of the corresponding color after conversion by the first color conversion portion and block the light of other colors. The orthographic projection of the second color block on the first substrate 103 overlaps with the orthographic projection of the second color conversion portion on the first substrate 103. The second color block is used to transmit the light of the corresponding color after conversion by the second color conversion portion and block the light of other colors. The orthographic projection of the third color block on the first substrate 103 overlaps with the orthographic projection of the transparent portion on the first substrate 103. The third color block is used to transmit the light of the corresponding color transmitted by the transparent portion and block the light of other colors.

[0207] For example, the first color block is a red color block, the second color block is a green color block, and the third color block is a blue color block.

[0208] Step S1012: forming an adhesive layer, a buffer layer, a first doped layer, a multi-quantum well layer, a second doped layer and a conductive layer in sequence on a side of the color conversion layer away from the first substrate.

[0209] In an embodiment of the present application, an adhesive layer and a buffer layer may be formed on the side of the color conversion layer away from the first substrate. Furthermore, referring to Figures 23 and 24 , the process of preparing the first doped layer, the multi-quantum well layer, the second doped layer, and the conductive layer includes: forming a first doped film, a multi-quantum well film, a second doped film, and a conductive film; and patterning the first doped film, the multi-quantum well film, the second doped film, and the conductive film to obtain the first doped layer, the multi-quantum well layer, the second doped layer, and the conductive layer.

[0210] Referring to Figure 24, the multi-quantum well layer 10612, the second doped layer 10163 and the conductive layer 10165 have vias that expose the target portion 10161a of the first doped layer 10161. Among them, the first doped layer 10161 can be an N-type doped layer, and the second doped layer 10163 can be a P-type doped layer. Accordingly, the first electrode 1011 can be called an N-type electrode, and the second electrode 1012 can be called a P-type electrode. Optionally, the material of the first doped layer 10161 can be N-type gallium nitride (GaN), denoted as N-GaN. The material of the second doped layer 10163 can be P-type GaN, denoted as P-GaN. The bonding layer 1017 is used to bond the color conversion layer 1015 and the buffer layer 1018. The material of the buffer layer 1018 can be GaN. The material of the conductive layer 10165 can be indium tin oxide (ITO).

[0211] Step S1013: forming a padding electrode in the via hole of the multi-quantum well layer, the second doped layer and the conductive layer.

[0212] Referring to Figure 25, the raised electrode 10164 can be connected to the first doping layer 10161.

[0213] Step S1014: forming an insulating layer on a side of the raised electrode and the conductive layer away from the second substrate.

[0214] 26 , the insulating layer 10166 has a first via hole 10166 a and a second via hole 10166 b . The first via hole 10166 a is used to expose the raised electrode 10164 , and the second via hole 10166 b is used to expose the conductive layer 10165 .

[0215] Step S1015 , forming a first electrode and a second electrode on a side of the insulating layer away from the first substrate.

[0216] 18 , at least a portion of the first electrode 1011 is located within the first via and connected to the raised electrode 10164 exposed through the first via, thereby connecting the first electrode 1011 to the first doped layer 10161. At least a portion of the second electrode 1012 is located within the second via and connected to the conductive layer 10165 exposed through the second via, thereby connecting the second electrode 1012 to the second doped layer 10163.

[0217] Optionally, the materials of the first electrode 1011 and the second electrode 1012 both include metal.

[0218] Step S102: Acquire a second target structure.

[0219] In an embodiment of the present application, referring to FIG. 27 , the second target structure includes a second substrate, an optical adhesive layer located on one side of the second substrate, a drive unit 102, and pins 104. The optical adhesive layer has a via hole, and pins 104 are located within the via hole. Furthermore, pins 104 are connected to drive unit 102.

[0220] 21 , the driving unit 102 includes a third electrode 1021, a fourth electrode 1022, and a driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 are connected to the driving circuit 1023, respectively.

[0221] 28 , the method for acquiring the second target structure includes:

[0222] Step S1021: forming an optical adhesive layer on one side of the second substrate.

[0223] In an embodiment of the present application, the process of forming the optical adhesive layer includes: coating an optical adhesive film on one side of the second substrate, and patterning the optical adhesive film to obtain the optical adhesive layer. The patterning process includes: photoresist coating, exposure, development, etching, and removal of the photoresist.

[0224] The optical adhesive layer (PR) has a different light-sensitive wavelength than the photoresist (PR) used in the patterning process for fabricating other layers. This allows the fabrication of other layers without affecting the optical adhesive layer (PR). Typically, PR adhesives have light-sensitive wavelengths of 405°, 436°, and 365°, so the optical adhesive layer and the photoresist simply need to be different.

[0225] 29 , the optical adhesive layer may have a via G1 for filling material to form the pins 104 of the light emitting assembly 10. The thickness of the optical adhesive layer ranges from 15 μm to 25 μm, which can make the height of the formed pins 104 range from 15 μm to 25 μm.

[0226] Step S1022: Fill the via holes of the optical adhesive layer with conductive material.

[0227] 30 , the conductive material 104a may completely fill the via hole G1 of the optical adhesive layer, and the conductive material 104a is used as the pin 104 included in the light emitting component 10. Moreover, the shape of the pin 104 may be the same as the shape of the via hole of the optical adhesive layer.

[0228] Step S1023 : forming a substrate and a buffer insulating layer on a side of the optical adhesive layer away from the second substrate.

[0229] In an embodiment of the present application, the process of forming the substrate 1024 and the buffer insulating layer n1 includes: coating a substrate film and a buffer film on the side of the optical adhesive layer away from the second substrate, and patterning the substrate film and the buffer film to obtain the substrate 1024 and the buffer insulating layer n1.

[0230] 31 , the substrate 1024 and the buffer insulating layer n1 may have via holes G2 therein, and the via holes G2 are used to be filled with materials to form the connection structure 1025 of the light emitting assembly 10 .

[0231] Step S1024 : filling the via holes of the substrate and the buffer insulating layer with conductive material.

[0232] 32 , the conductive material may completely fill the via hole G2 of the substrate 1024 and the buffer insulating layer n1. The conductive material 1025a is used as the connection structure 1025 included in the light emitting component 10. The shape of the connection structure 1025 may be the same as that of the via hole of the substrate 1024 and the buffer insulating layer n1.

[0233] Step S1025 : forming an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a source and drain electrode layer, and a planarization layer on a side of the buffer insulating layer away from the second substrate.

[0234] In the embodiment of the present application, referring to FIG33 , the active layer n2 includes multiple active patterns corresponding to multiple thin-film transistors. Each active pattern includes a source region, a drain region, and a channel region. The source and drain of the thin-film transistors are located in the source-drain layer, and the source of the thin-film transistor is connected to the source region, and the drain is connected to the drain region.

[0235] The gate layer n4 includes a plurality of gate patterns corresponding to the plurality of thin film transistors. The channel region is an overlapping region of an orthographic projection of the gate pattern on the substrate 1024 and an orthographic projection of the active pattern on the substrate 1024.

[0236] Step S1026 , forming a third electrode and a fourth electrode on a side of the planar layer away from the second substrate.

[0237] In the embodiment of the present application, referring to FIG. 27 , the third electrode 1021 and the fourth electrode 1022 are spaced apart. Furthermore, the data signal pin 104 is connected to the source of the data write transistor, which is connected to the third electrode 1021 via other thin-film transistors in the driver circuit 1023 for transmitting data signals. The VSS signal pin 104 is connected to the first electrode 1011.

[0238] Optionally, the materials of the third electrode 1021 and the fourth electrode 1022 both include metal.

[0239] Step S103 : bonding the driving unit and the light-emitting unit together through a bonding process.

[0240] In an embodiment of the present application, referring to FIG. 34 , after the light emitting unit 101 and the driving unit 102 are bonded together through a bonding process, the third electrode 1021 and the first electrode 1011 can be electrically connected, and the fourth electrode 1022 and the second electrode 1012 can be electrically connected.

[0241] The first electrode 1011 and the second electrode 1012 included in the light-emitting unit 101 are both located between the light-emitting portion 1013 and the driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 included in the driving unit 102 are also both located between the light-emitting portion 1013 and the driving circuit 1023. The materials of the first electrode 1011, the second electrode 1012, the third electrode 1021, and the fourth electrode 1022 are all made of metal. For example, there is a gap between the driving circuit 1023 and the light-emitting portion 1013, and the first electrode 1011, the second electrode 1012, the third electrode 1021, and the fourth electrode 1022 are all located in the gap and in direct contact with the gas in the gap.

[0242] That is, in the embodiment of the present application, the first electrode 1011 and the second electrode 1012 are spaced apart, and the third electrode 1021 and the fourth electrode 1022 are spaced apart. The first electrode 1011 and the second electrode 1012, as well as the third electrode 1021 and the fourth electrode 1022 are insulated from each other by gas in the gaps, thereby preventing damage to the first electrode 1011 and the second electrode 1012 from being connected, and preventing damage to the third electrode 1021 and the fourth electrode 1022 from being connected.

[0243] Optionally, the gas in the gap between the driving circuit 1023 and the light emitting portion 1013 may be air or a protective gas, wherein the protective gas may be nitrogen or an inert gas.

[0244] Step S104: removing the second substrate from one side of the optical adhesive layer.

[0245] In an embodiment of the present application, referring to FIG35 , after bonding, the second substrate can be removed from one side of the optical adhesive layer. Alternatively, referring to FIG36 , a laser liftoff (LLO) method can be used to remove the second substrate from one side of the optical adhesive layer. Alternatively, referring to FIG37 , an etching process can be used to etch the second substrate from one side of the optical adhesive layer. The film layer A in FIG36 and FIG37 is used to represent the other film layers in FIG35 excluding the second substrate and the optical adhesive layer.

[0246] When the etching process is used, the light emitting unit 101 and the driving unit 102 need to be protected. Therefore, before the etching process, a release film and an acid-proof film are formed on the side of the film layer A away from the optical adhesive layer.

[0247] Moreover, after the second substrate is removed from one side of the driving unit 102, the first substrate 103 can also be thinned (the thickness of the first substrate 103 after thinning is less than the thickness of the first substrate 103 before thin film treatment) so that the total thickness of the finally formed light-emitting component 10 is thinner, which facilitates the realization of a thinner display panel.

[0248] In the embodiment of the present application, after the second substrate is removed, a temporary process film (TPF) may be attached to the side of the first substrate 103 away from the optical adhesive layer, and the protective film may be removed before the light emitting assembly 10 and the display backplane 20 are subsequently die-bonded.

[0249] When removing the protective film, the side of the driver circuit 1023 away from the first substrate 103 is supported not only by the substrate 1024 but also by the optical adhesive layer. Therefore, even though the protective film needs to be removed, both the substrate 1024 and the optical adhesive layer provide support (with a relatively strong supporting force), thus preventing the device from being pulled or warped, potentially causing breakage.

[0250] Step S105: removing the optical adhesive layer from one side of the driving unit.

[0251] In an embodiment of the present application, the optical adhesive layer is removed from one side of the driver unit before die-bonding the light-emitting assembly 10 and the display backplane 20. Referring to FIG38 , the optical adhesive layer can be removed from one side of the driver unit 102 using a dry etching process to remove the photoresist, thereby exposing the pins 104 located within the vias of the optical adhesive layer. The end surface of the pins 104 fabricated in this manner, facing away from the driver unit 102, is flat.

[0252] In an embodiment of the present application, multiple light-emitting components can be prepared simultaneously. For example, referring to FIG39, based on the above steps S1011 to S1015, multiple light-emitting units included in multiple light-emitting components are formed on a first substrate of a larger size (each black block in FIG39 is used to represent a blue light-emitting unit, a red light-emitting unit, and a green light-emitting unit included in a light-emitting component); referring to FIG40, based on the above steps S1021 to S1026, multiple driving circuits included in multiple driving units are formed on a second substrate of a larger size (each white block in FIG40 is used to represent a driving unit included in a light-emitting component, each driving unit including a blue driving circuit corresponding to the blue light-emitting unit, a red driving circuit corresponding to the red light-emitting unit, and a green driving circuit corresponding to the green light-emitting unit); referring to FIG41, the multiple light-emitting units included in the multiple light-emitting components on the first substrate shown in FIG39 are bonded to the multiple driving units included in the multiple light-emitting components on the second substrate shown in FIG40 through a bonding process; the bonded structure is cut to obtain a single multiple light-emitting components. The shapes of the first substrate and the second substrate shown in FIG. 39 to FIG. 41 are elliptical, but in fact the shapes of the first substrate and the second substrate may also be other shapes, which is not limited to this.

[0253] It should be noted that the order of the steps in the method for preparing the light-emitting component provided in the embodiments of the present application can be appropriately adjusted, and the number of steps can be increased or decreased according to the circumstances. For example, step S101 and step S102 can be performed simultaneously, and step S104 can be performed before step S103. Any person skilled in the art who can easily conceive of a modified method within the technical scope disclosed in this application should be included in the scope of protection of this application, and therefore will not be described in detail.

[0254] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, and the light-emitting component prepared by the method includes a first substrate, a light-emitting unit, a driving unit and a pin, which are arranged in sequence. The light-emitting unit and the driving unit are connected, and the driving unit and the pin are connected, so that the driving unit can receive a driving signal through the pin and control the light-emitting unit to emit light. Since the pin is not prepared by an electroplating process or a chemical plating process, it is not necessary to place the entire component in a specific solution when preparing the pin, and thus the specific solution will not be immersed between the electrodes to cause damage to the electrode connection, thereby ensuring the light-emitting effect of the light-emitting component. In addition, the end face of the pin prepared by this method on the side away from the driving unit is a plane.

[0255] FIG42 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application. Referring to FIG42 , the display panel 00 includes a display backplane 20 and a plurality of light-emitting components 10 .

[0256] Referring to Figure 43, multiple light-emitting components 10 are located in the display area 00a of the display panel 00, and the multiple light-emitting components 10 are arranged in an array. The display backplane 20 is used to provide a driving signal to the driving unit 102 through the multiple pins 103 in the light-emitting components 10, so that the driving unit 102 drives the light-emitting unit 101 to emit light.

[0257] In the embodiment of the present application, a plurality of light emitting components 10 are bonded to the display backplane 20 by a eutectic bonding process, wherein eutectic refers to the formation of a eutectic metal compound between two metals under bonding conditions at a certain temperature to achieve bonding.

[0258] Since the display panel can have substantially the same technical effects as the light-emitting assembly described in the previous embodiment, the technical effects of the display panel will not be repeatedly described here for the purpose of brevity.

[0259] The terms used in the embodiments of this application are only used to explain the embodiments of this application and are not intended to limit this application. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of this application should have the common meaning understood by people with ordinary skills in the field to which this application belongs.

[0260] The terms used in the embodiments of this application are intended solely to illustrate the embodiments of this application and are not intended to limit this application. Unless otherwise defined, technical or scientific terms used in the embodiments of this application should have the same ordinary meaning as those understood by persons of ordinary skill in the art to which this application belongs. The terms "first," "second," "third," and similar terms used in this patent specification and claims do not denote any order, quantity, or importance, but are simply used to distinguish between different components. Similarly, terms such as "a" or "an" do not denote a limitation of quantity, but rather denote the presence of at least one. Terms such as "include" or "comprising" and similar terms mean that the elements or objects listed before "include" or "comprising" include the elements or objects listed after "include" or "comprising," and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used solely to indicate relative positions. When the absolute position of the described objects changes, the relative positions may also change accordingly.

[0261] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A light-emitting component, comprising: A light-emitting unit (101), the light-emitting unit (101) comprising: a first electrode (1011), a second electrode (1012), and a light-emitting portion (1013) electrically connected to the first electrode (1011) and the second electrode (1012), respectively; A driving unit (102), the driving unit (102) comprising a third electrode (1021), a fourth electrode (1022) and a driving circuit (1023), the third electrode (1021) and the fourth electrode (1022) both being located on a side of the driving unit (102) facing the light-emitting unit (101), the third electrode (1021) and the fourth electrode (1022) being electrically connected to the driving circuit (1023) respectively, the third electrode (1021) being electrically connected to the first electrode (1011), and the fourth electrode (1022) being electrically connected to the second electrode (1012); A first substrate (103) is located on a side of the light-emitting unit (101) away from the driving unit (102); and a pin (104), wherein the pin (104) is located on a side of the driving unit (102) away from the light-emitting unit (101), the pin (104) is connected to the driving unit (102), and the end surface of the pin (104) on the side away from the driving unit (102) is a plane.

2. The light-emitting component according to claim 1, wherein the driving unit (102) comprises a substrate (1024), the driving circuit (1023) is located on one side of the substrate (1024), and the substrate (1024) has a target surface (1024a) on a side away from the driving circuit (1023); The pin (104) is located on a side of the substrate (1024) away from the driving unit (102), and an end surface of the pin (104) on a side away from the substrate (1024) is parallel to the target surface (1024a).

3. The light-emitting component according to claim 2, wherein a distance between an end surface of the pin (104) away from the substrate (1024) and the target surface (1024a) ranges from 15 micrometers to 25 micrometers.

4. The light-emitting component according to claim 1, wherein the driving unit (102) comprises a substrate (1024), wherein the substrate (1024) has a target surface (1024a) on a side away from the driving circuit (1023); The portion of the pin (104) protruding from the target surface (1024a) is in the shape of a prism, a truncated cone, a cylinder and a truncated cone.

5. The light-emitting component according to claim 4, wherein the portion of the pin (104) protruding from the target surface (1024a) is in the shape of a prism; the prism has a top surface (m2) on a side close to the target surface (1024a) and a bottom surface (m1) on a side away from the target surface (1024a), and the bottom surface (m1) is the end surface; The prism also has a plurality of rectangular side surfaces (m3), and the relationship between the length W1 of a first side of the rectangular side surface (m3) and the length H1 of a second side of the rectangular side surface (m3) satisfies: W1=k1×H1; in, The value range of k1 is 1.5 to 2.5, the first side is a side of the rectangular side (m3) close to the top surface (m2), and the second side is a side of the rectangular side (m3) located between the top surface (m2) and the bottom surface (m1).

6. The light-emitting component according to claim 4, wherein the portion of the pin (104) protruding from the target surface (1024a) is in the shape of a prism; the prism has a top surface (m2) on a side close to the target surface (1024a) and a bottom surface (m1) on a side away from the target surface (1024a), and the bottom surface (m1) is the end surface; The prism also has a plurality of trapezoidal side surfaces (m3), and the relationship between the length W2 of the upper base of the trapezoidal side surfaces (m3) and the height H2 of the prism satisfies: W2 = k2 × H2; in, The value range of k2 is 1.5 to 2.5, the length of the upper base of the trapezoidal side (m3) is smaller than the length of the lower base of the trapezoidal side (m3), and the height H2 of the prism is equal to the distance between the top surface (m2) and the bottom surface (m1).

7. The light-emitting component according to claim 6, wherein the area of ​​the orthographic projection of the top surface (m2) on the substrate (1024) is smaller than the area of ​​the orthographic projection of the bottom surface (m1) on the substrate (1024), and the orthographic projection of the top surface (m2) on the substrate (1024) is located within the orthographic projection of the bottom surface (m1) on the substrate (1024), and the upper base of the trapezoidal side surface (m3) is closer to the substrate (1024) than the lower base of the trapezoidal side surface (m3); The area of ​​the orthographic projection of the top surface (m2) on the substrate (1024) is greater than the area of ​​the orthographic projection of the bottom surface (m1) on the substrate (1024), and the orthographic projection of the bottom surface (m1) on the substrate (1024) is located within the orthographic projection of the top surface (m2) on the substrate (1024), and the lower base of the trapezoidal side surface (m3) is closer to the substrate (1024) than the upper base of the trapezoidal side surface (m3).

8. The light-emitting component according to claim 4, wherein the portion of the pin (104) protruding from the target surface (1024a) is in the shape of a cylinder; the cylinder has a side surface (m3), a top surface (m2) on a side close to the target surface (1024a), and a bottom surface (m1) on a side away from the target surface (1024a), and the bottom surface (m1) is the end surface; The relationship between the diameter W4 of the top surface (m2) or the bottom surface (m1) and the height H4 of the cylinder satisfies: W4 = k4 × H4; in, The value range of k4 is 1.5 to 2.5, and the height H4 of the cylinder is equal to the distance between the top surface (m2) and the bottom surface (m1).

9. The light-emitting component according to claim 4, wherein the portion of the pin (104) protruding from the target surface (1024a) is in the shape of a truncated cone; the truncated cone has a side surface (m3), a top surface (m2) on a side close to the target surface (1024a), and a bottom surface (m1) on a side away from the target surface (1024a), and the bottom surface (m1) is the end surface; The diameter of the top surface (m2) is different from the diameter of the bottom surface (m1), and the relationship between the smaller diameter W5 of the top surface (m2) and the bottom surface (m1) and the height H5 of the truncated cone satisfies: W5 = k5 × H5; in, The value range of k5 is 1.5 to 2.5, and the height H5 of the truncated cone is equal to the distance between the top surface (m2) and the bottom surface (m1).

10. The light-emitting component according to claim 6 or 9, wherein the area of ​​the portion of the pin (104) protruding from the target surface (1024a) in a cross section parallel to the target surface (1024a) increases as the distance between the cross section and the target surface (1024a) increases.

11. According to any one of claims 1 to 9, the first electrode (1011) and the second electrode (1012) are both located between the light-emitting portion (1013) and the driving circuit (1023); and the materials of the first electrode (1011) and the second electrode (1012) both include metal; A partial area between the driving unit (102) and the light-emitting unit (101) has a gap, and the first electrode (1011) and the second electrode (1012) are both located in the gap and in direct contact with the gas in the gap.

12. The light-emitting assembly according to any one of claims 1 to 9, wherein the light-emitting assembly (10) comprises a plurality of light-emitting units (101) and the driving units (102) corresponding to the plurality of light-emitting units (101); The plurality of light emitting units (101) include light emitting units of a first color, light emitting units of a second color and light emitting units of a third color, wherein the first color, the second color and the third color are different from each other.

13. The light-emitting assembly according to claim 12, wherein the light-emitting unit (101) further comprises a color filter layer (1014), a color conversion layer (1015) and a light-emitting layer (1016) which are sequentially stacked in a direction away from the first substrate (103); the light-emitting color of the light-emitting layer (1016) is blue; The light-emitting layer (1016) includes a first doping layer (10161), a multi-quantum well layer (10612) and a second doping layer (10163) which are stacked, wherein: The first doped layer (10161) is electrically connected to the first electrode (1011), the second doped layer (10163) is electrically connected to the second electrode (1012), and the light-emitting layer (1016) includes a first light-emitting portion, a second light-emitting portion and a third light-emitting portion.

14. According to any one of claims 1 to 9, the driving unit (102) further comprises a connection structure (1025), and the substrate (1024) included in the driving unit (102) has a connection via hole, and the connection structure (1025) is located in the connection via hole; The driving circuit (1023) is located on one side of the substrate (1024), and the driving circuit (1023) is connected to the connection structure (1025), and the side of the pin (104) close to the driving unit (102) is in contact with the connection structure (1025).

15. The light-emitting component according to claim 14, wherein the driving circuit (1023) comprises a plurality of thin film transistors and at least one storage capacitor, and each of the thin film transistors comprises a gate, a source and a drain; The pin (104) is connected to the source electrode of a thin film transistor among the plurality of thin film transistors via the connection structure (1025), and is used to provide the driving circuit (1023) with a data signal transmitted from a display backplane in the display panel.

16. The light-emitting component according to claim 15, wherein the driving circuit (1023) comprises a buffer insulating layer, an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, an interlayer dielectric layer, a source-drain electrode layer and a planar layer, which are located on one side of the substrate (1024) and are stacked in sequence; the third electrode (1021) and the fourth electrode (1022) are located on a side of the planar layer away from the substrate (1024); The active layer includes a plurality of active patterns corresponding to the plurality of thin film transistors, each of the active patterns includes a source region, a drain region and a channel region; The source electrode and the drain electrode of the thin film transistor are located in the source-drain electrode layer, the source electrode of the thin film transistor is connected to the source region, and the drain electrode of the thin film transistor is connected to the drain region; The first gate layer includes a plurality of gate patterns corresponding to the plurality of thin film transistors, and the channel region is an overlapping region of an orthographic projection of the gate pattern on the substrate (1024) and an orthographic projection of the active pattern on the substrate (1024).

17. A method for preparing a light-emitting component, the method comprising: Acquire a first target structure, the first target structure comprising a first substrate (103), and a light-emitting unit (101) located on one side of the first substrate (103); the light-emitting unit (101) comprising a first electrode (1011), a second electrode (1012), and a light-emitting portion (1013) electrically connected to the first electrode (1011) and the second electrode (1012), respectively; A second target structure is obtained, wherein the second target structure comprises a second substrate, an optical adhesive layer located on one side of the second substrate, a driving unit (102) and a pin (104); the optical adhesive layer has a via hole, the pin (104) is located in the via hole, and the pin (104) is connected to the driving unit (102); the driving unit (102) comprises a third electrode (1021), a fourth electrode (1022) and a driving circuit (1023), and the third electrode (1021) and the fourth electrode (1022) are respectively electrically connected to the driving circuit (1023); The driving unit (102) and the light-emitting unit (101) are bonded and connected by a bonding process, the third electrode (1021) and the first electrode (1011) are electrically connected, and the fourth electrode (1022) and the second electrode (1012) are electrically connected; The second substrate and the optical adhesive layer are removed from one side of the driving unit (102) so that the pin (104) protrudes from the side of the driving unit (102) away from the light-emitting unit (101); The end surface of the pin (104) on the side away from the driving unit (102) is a plane. 18 . The method according to claim 17 , wherein the thickness of the optical adhesive layer is in a range of 15 μm to 25 μm.

19. A display panel, comprising a display backplane, and a plurality of light emitting components (10) according to any one of claims 1 to 16 arranged in an array on one side of the display backplane (20); in, The display back panel (20) is used to provide a driving signal to the driving unit (102) through a plurality of pins (104) in the light-emitting component (10), so that the driving unit (102) drives the light-emitting unit (101) to emit light.

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