Reaction device, semiconductor coating device, and coating method thereof

Abstract

A reaction device, a semiconductor coating device, and a coating method thereof. The reaction device comprises a reaction chamber, a first cover plate, an air inlet assembly, and a homogenizing board. A reaction cavity is formed in the reaction chamber and used for bearing a reactant, and the reaction chamber comprises a first end and a second end which are oppositely arranged. The first cover plate covers the first end. The air inlet assembly is provided on the first cover plate, and the air inlet assembly is communicated with the reaction cavity. The homogenizing board is arranged between the first cover plate and the reaction chamber. The arrangement direction of the first cover plate and the homogenizing board is perpendicular to the vertical axis of the reactant, the wall surface of the homogenizing board facing the first cover plate is configured in a raised mode, and the wall face of the first cover plate facing the homogenizing board is arranged in a sunken mode. On the basis of the structure, a reaction source can be diffused more uniformly in the process of entering the reaction chamber, so that the distribution of the reaction source on the reactant is more uniform, and the film thickness uniformity between reactants is better.

Description

Reaction equipment, semiconductor coating equipment and coating method thereof

[0001] This application claims priority to Chinese patent application No. 2023106891920, filed on June 12, 2023, entitled “A reaction device, a semiconductor coating device and a coating method thereof”, which is incorporated herein by reference in its entirety. Technical Field

[0002] The present application belongs to the field of semiconductor technology, and specifically relates to a reaction device, a semiconductor coating device and a coating method thereof. Background Art

[0003] In existing epitaxial process chambers, reactive gases are delivered into the semiconductor process chamber and chemically reacted by heating and other means. However, the diffusion of the process gases above the reactants is usually not uniform, resulting in poor uniformity in the film thickness on the reactants, which affects the reaction results.

[0004] Summary of the Invention

[0005] The main technical problem solved by the present application is to provide a reaction device, a semiconductor coating device and a coating method thereof, so as to solve the technical problem of uneven diffusion of process gas above the reactants.

[0006] In order to solve the above technical problems, a technical solution adopted in the present application is: a reaction device, including a reaction chamber, a reaction cavity is formed inside, which is used to carry the reactant, and the reaction chamber includes a first end and a second end arranged opposite to each other; a first cover plate, which is covered on the first end; an air intake assembly, which is arranged on the first cover plate, and the air intake assembly is connected to the reaction cavity; a flow equalizer, which is arranged between the first cover plate and the reaction chamber; wherein the arrangement direction of the first cover plate and the flow equalizer is parallel to the vertical axis of the reactant, the wall surface of the flow equalizer facing the first cover plate is raised, and the wall surface of the first cover plate facing the flow equalizer is recessed.

[0007] The side of the flow equalizer plate facing the first cover plate is an arc-shaped surface, and in the first direction, the distance between the flow equalizer plate and the first cover plate gradually increases from the middle to both ends.

[0008] The first cover plate has an arc-shaped surface on one side facing the flow equalizer plate, and in the second direction, the distance between the first cover plate and the flow equalizer plate gradually decreases from the middle to both ends, and the second direction intersects with the first direction.

[0009] Wherein, the central angle of the arc surface is greater than 0° and less than or equal to 15°.

[0010] Among them, at least two air inlets are spaced apart on the first cover plate, and the air intake assembly includes: an air intake end cover, at least two of which are correspondingly provided, and the air intake end cover is covered on the air inlet; an air intake pipe, at least two groups of which are provided, and each group of the air intake pipes includes a connecting pipe and a ventilation pipe, wherein the connecting pipe is connected to each of the air intake end covers, and the ventilation pipe is connected to the connecting pipe.

[0011] Among them, two air inlets are provided on the first cover plate, and the two air inlets are spaced apart, and two air inlet end covers are correspondingly provided, and two groups of air inlet pipes are provided, each group of air inlet pipes includes one connecting pipe and one ventilation pipe, the connecting pipe connects the two air inlet end covers, and the ventilation pipe connects to the middle of the connecting pipe.

[0012] Wherein, in the spacing arrangement direction of the two air inlets, the two air inlets are respectively located at 1 / 3 of the first cover plate.

[0013] Wherein, the air intake assembly further includes a guide block, which is arranged on the side of the air intake end cover facing the air inlet, and the connection end of the connecting pipe connected to the air intake end cover is spaced apart and arranged at the periphery of the guide block.

[0014] The reaction device further comprises a partition plate, which is arranged between the flow-distributing plate and the first cover plate, and a plurality of air inlet holes are arranged in an array on the partition plate.

[0015] Wherein, a sub-partition plate is provided at the partition plate corresponding to the air inlet, and a plurality of guide holes are arranged in an array on the sub-partition plate.

[0016] Wherein, the reaction equipment also includes an exhaust component, which is arranged in the reaction chamber, and the exhaust component includes: a second cover plate, which is covered on the second end of the reaction chamber, and the second cover plate is provided with an exhaust port; an exhaust pipe, which is arranged on the second cover plate, and the exhaust pipe is connected to the exhaust port.

[0017] In which, the reaction chamber has a first side and a second side arranged opposite to each other, and a third side and a fourth side arranged opposite to each other at the second end, and the second cover plate includes: two semicircular plates, respectively arranged on the first side and the second side, and the two semicircular plates are inclined toward each other; an arc-shaped plate connecting the third side and the fourth side, and connecting the outer edges of the two semicircular plates, the exhaust port is arranged on the arc-shaped plate, and the arc-shaped plate and the two semicircular plates surround an exhaust cavity with a gradually decreasing inner diameter.

[0018] Wherein, the reaction equipment includes a temperature sensor, which is arranged on the top of the reaction chamber and is used to measure the temperature of the reaction chamber.

[0019] In which, the reaction equipment also includes: a sub-gas pipeline, arranged on the side wall of the flow uniforming plate, for externally connecting inert gas; an annular groove, arranged on the outer periphery of the first end of the reaction chamber, the annular groove is connected to the sub-gas pipeline, for forming an airtight seal.

[0020] Wherein, the reaction equipment further includes fixing studs, which are arranged on both sides of the reaction chamber, and the height of the fixing studs is not less than half of the height of the reaction chamber.

[0021] In order to solve the above technical problems, another technical solution adopted in the present application is: to provide a semiconductor coating device, wherein the semiconductor coating device includes any of the reaction devices described above.

[0022] In order to solve the above technical problems, another technical solution adopted in the present application is: to provide a coating method, which adopts any of the above-mentioned reaction equipment or the above-mentioned semiconductor coating equipment, and the coating method includes: placing the reactant in the reaction chamber; inputting the reaction source through the air intake assembly, and the reaction source enters the reaction chamber after passing through the first cover plate and the flow uniform plate in turn.

[0023] The above technical solution is to set a first cover plate, an air inlet assembly and a flow plate on the reaction chamber, and the wall surface of the flow plate facing the first cover plate is raised, and the wall surface of the first cover plate facing the flow plate is recessed. The setting of this structure allows the reaction source to diffuse more evenly during the reaction process in the reaction chamber, so that the distribution of the reaction source on the reactant is more uniform, and thus the film thickness uniformity between the reactants is better. In addition, the provision of an independent reaction chamber can also effectively solve the problem of gas flow resistance consistency between the reactants, thereby further improving the uniformity of film thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present application. Those skilled in the art can also derive other drawings based on these drawings without inventive work, among which:

[0025] FIG1 is a schematic diagram of the overall structure of a reaction device according to an embodiment of the present application;

[0026] FIG2 is a schematic diagram of an explosion structure of a reaction device according to an embodiment of the present application;

[0027] FIG3 is a schematic cross-sectional view of a flow distribution plate facing the first cover plate of a reaction apparatus according to an embodiment of the present application;

[0028] FIG4 is a schematic cross-sectional view of the first cover plate facing the flow uniforming plate of an embodiment of a reaction apparatus of the present application;

[0029] FIG5 is a schematic structural diagram of an air intake assembly disposed on a first cover plate in an embodiment of a reaction device of the present application;

[0030] FIG6 is another overall structural diagram of a reaction device according to an embodiment of the present application;

[0031] FIG7 is a schematic flow chart of an embodiment of a coating method of the present application. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0033] It should be noted that if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0034] In order to better understand the present application, a heating circuit and a heating circuit provided by the present application are described in more detail below with reference to the accompanying drawings and specific embodiments.

[0035] Please refer to Figures 1 and 2. Figure 1 is a schematic diagram of the overall structure of an embodiment of the reaction equipment of the present application; Figure 2 is a schematic diagram of the explosion structure of an embodiment of the reaction equipment of the present application.

[0036] An embodiment of the present application provides a reaction device 10. The reaction device 10 includes a reaction chamber 11, a first cover plate 12, an air intake assembly 13 and a flow equalizer 14. A reaction chamber 111 is formed inside the reaction chamber 11 for carrying a substance to be reacted. The reaction chamber 11 includes a first end 112 and a second end 113 that are relatively arranged. The first cover plate 12 is covered on the first end 112. The air intake assembly 13 is arranged on the first cover plate 12, and the air intake assembly 13 is connected to the reaction chamber 111. The flow equalizer 14 is arranged between the first cover plate 12 and the reaction chamber 11. In addition, the arrangement direction of the first cover plate 12 and the flow equalizer 14 is perpendicular to the vertical axis of the substance to be reacted, and the wall surface of the flow equalizer 14 facing the first cover plate 12 is raised, and the wall surface of the first cover plate 12 facing the flow equalizer 14 is recessed.

[0037] As can be seen from the above structure, the setting of the reaction chamber 11 can provide an independent reaction chamber 111 for the reactant to be reacted. Due to the good consistency of the volume of the reaction chamber 111 and the consistency of the air density in the reaction chamber 111, the problem of consistency of gas flow resistance between the reactants can be better solved. At this time, the gas flow resistance between the reactants is consistent, and after the reaction source reacts in the reaction chamber 111, the film thickness between the reactants can also be made more uniform. At the same time, since the arrangement direction of the first cover plate 12 and the flow plate 14 is perpendicular to the vertical axis of the reactant, and the concentration of the reaction source at the position of the air inlet component 13 is high, the wall surface of the flow plate 14 facing the first cover plate 12 is raised and the wall surface of the first cover plate 12 facing the flow plate 14 is recessed. The diffusion path of the reaction source is longer at the position near the air inlet component 13, and the concentration of the overall reaction source in the reaction chamber 111 can be well adjusted, so that the reaction source can be more uniform during the process of diffusing into the reaction chamber 111. At this time, the concentration distribution of the reaction source in the reaction chamber 111 is more uniform. Therefore, when the reactants react in the reaction chamber 111 , the contact between the reactants and the reaction source is more uniform, thereby making the film thickness uniformity of the reactants better.

[0038] It should be noted that only the wall surface of the uniform flow plate 14 facing the first cover plate 12 can be raised. In this case, the reaction source enters the first cover plate 12 and the uniform flow plate 14 in sequence from the air inlet assembly 13, and can diffuse outward after entering the uniform flow plate 14, thereby making the reaction source diffuse more evenly in the process of entering the reaction chamber 111; of course, only the first cover plate 12 can be raised. The wall surface facing the flow equalizer plate 14 is concave. At this time, the reaction source can diffuse outward from the air inlet component 13 through the first cover plate 12, so that the reaction source diffuses more evenly when entering the reaction chamber 111. Of course, the wall surface facing the first cover plate 12 can also be raised at the same time, and the wall surface facing the flow equalizer plate 14 can be concave. At this time, when the reaction source enters the first cover plate 12 and the flow equalizer plate 14 in turn from the air inlet component 13, it can diffuse to the surroundings when passing through the first cover plate 12 and the flow equalizer plate 14 respectively. The reaction source distribution in the entire reaction chamber 111 is more even, and thus the reaction source concentration distribution in the reaction chamber 111 is more even. There is no restriction here.

[0039] In some embodiments, the first end 112 of the reaction chamber 11 is provided with spaced-apart grids. When the reaction source passes through the air inlet assembly 13 and flows sequentially through the first cover plate 12 and the flow equalizer 14, it enters the reaction chamber 111 from the first end 112. Therefore, the spaced-apart grids provided at the first end 112 of the reaction chamber 11 enable the reaction source to flow more evenly into the reaction chamber 111, allowing the reaction source to diffuse evenly into the reaction chamber 111. The more evenly the reaction source diffuses within the reaction chamber 111, the more evenly the concentration distribution of the reaction source within the reaction chamber 111 is. At this time, the contact between the reactant and the reaction source is more even, thereby enabling the film thickness consistency between the reactants to be reacted to be better.

[0040] Please refer to Figures 3 to 4. Figure 3 is a schematic diagram of the cross-sectional structure of the flow equalizer plate toward the first cover plate of an embodiment of the reaction equipment of the present application; Figure 4 is a schematic diagram of the cross-sectional structure of the first cover plate toward the flow equalizer plate of an embodiment of the reaction equipment of the present application.

[0041] In the embodiment of the present application, the side of the flow plate 14 facing the first cover plate 12 is an arc-shaped surface, and in the first direction 200, the distance between the flow plate 14 and the first cover plate 12 gradually increases from the middle to the two ends. At this time, the wall surface of the flow plate 14 facing the first cover plate 12 is raised, and the reaction source enters the first cover plate 12 and the flow plate 14 in sequence through the air inlet component 13. When passing through the flow plate 14, it can be evenly diffused to both sides along the first direction 200. The distance between the reaction source in the reaction chamber 111 at the position close to the air inlet component 13 and the position away from the air inlet component 13 can be kept consistent, thereby ensuring that the reaction source can be more evenly diffused into the reaction chamber 111 along the first direction 200. At this time, the concentration distribution of the reaction source in the reaction chamber 111 is also more uniform, so that the contact between the reactant and the reaction source is more uniform, thereby making the film thickness consistency between the reactants better.

[0042] Furthermore, the first cover plate 12 has an arc-shaped surface on the side facing the flow equalizer 14, and in the second direction 300, the distance between the first cover plate 12 and the flow equalizer 14 gradually decreases from the middle to the two ends, and the second direction 300 intersects with the first direction 200. At this time, the wall surface of the first cover plate 12 on the side facing the flow equalizer 14 is concave. After the reaction source enters the first cover plate 12 through the air inlet assembly 13, it diffuses evenly to both sides along the second direction 300. The distance between the reaction source in the reaction chamber 111 at a position close to the air inlet assembly 13 and at a position far from the air inlet assembly 13 can be kept consistent from the reaction chamber 11, thereby ensuring that the reaction source can be more evenly diffused into the reaction chamber 111 along the second direction 300. At this time, the concentration distribution of the reaction source in the reaction chamber 111 is also more uniform, so that the contact between the reactants and the reaction source is more uniform, thereby achieving better film thickness consistency between the reactants.

[0043] It should be noted that the first direction 200 and the second direction 300 can be perpendicular to each other. Wherein, when the reaction device 10 is in normal use, the first direction 200 is a horizontal direction, and the second direction 300 is a vertical direction. In other embodiments, the first direction 200 can be a vertical direction, and the second direction 300 can be a horizontal direction, which is not limited here. Of course, the first direction 200 can also intersect with the second direction 300 and is not perpendicular. At this time, when the reaction source enters the first cover plate 12 and the flow plate 14 through the air intake assembly 13, it can diffuse outward along the first direction 200 and the second direction 300, so that the concentration distribution of the reaction source in the reaction chamber 111 is more uniform. At this time, the contact between the reactant and the reaction source is more uniform, which can make the film thickness consistency between the reactants better, and will not be repeated here.

[0044] Furthermore, the central angle of the arc surface is greater than 0° and less than or equal to 15°. When the central angle of the arc surface is too large, the distance of the reaction source near the position of the air inlet component 13 entering the reaction chamber 111 will be too long. Therefore, after entering the reaction chamber 111, the concentration of the reaction source near the position of the air inlet component 13 will be lower than the concentration of the reaction source at other positions, thereby affecting the overall concentration of the reaction source in the reaction chamber 111 and further affecting the uniformity of the film thickness of the reactant. When the central angle of the arc surface is 0°, the arc surface is a plane and cannot play an auxiliary role in the diffusion of the reaction source, let alone achieve the effect of making the diffusion of the reaction source more uniform. Therefore, when the central angle of the arc surface is greater than 0° and less than or equal to 15°, the reaction source can be diffused into the reaction chamber 111 to react, and the diffusion of the reaction source is more uniform, thereby making the concentration distribution of the reaction source in the reaction chamber 111 more uniform, so as to better ensure the uniformity of the film thickness of the reactant in the reaction chamber 111.

[0045] It should be noted that the degree of the central angle can be 2°, the degree of the central angle can be 5°, or the degree of the central angle can be 13°, and there is no limitation here.

[0046] Please refer to FIG. 2 and FIG. 5 . FIG. 5 is a structural diagram of an air intake assembly of an embodiment of the reaction apparatus of the present application disposed on a first cover plate.

[0047] In some embodiments, at least two air inlets 121 are spaced apart on the first cover plate 12. The air inlet assembly 13 includes an air inlet end cover 131 and an air inlet pipe 132. At least two air inlet end covers 131 are correspondingly provided, and the air inlet end covers 131 are provided on the air inlet 121. At least two groups of air inlet pipes 132 are provided, and each group of air inlet pipes 132 includes a connecting pipe 1321 and a ventilation pipe 1322. The connecting pipe 1321 connects each air inlet end cover 131, and the ventilation pipe 1322 is connected to the connecting pipe 1321. By providing the air inlet end cover 131 and the air inlet pipe 132, the reaction source can enter the connecting pipe 1321 through the ventilation pipe 1322, thereby entering the air inlet end cover 131, and entering the air inlet 121 through the air inlet end cover 131.

[0048] A set of air inlet pipes 132 is used to guide a reaction source into the reaction chamber 111. Specifically, a reaction source enters the connecting pipe 1321 through the corresponding set of air ducts 1322. Because the connecting pipes 1321 connect to each of the air inlet end caps 131, the reaction source disperses through the connecting pipes 1321 and enters each of the air inlets 121. From there, the reaction source enters the reaction chamber 111, where a reaction occurs. When the reaction source enters the connecting pipe 1321 through the air duct 1322, it is split into two, three, or four at the connection with the connecting pipe 1321, depending on the number of air inlets 121 connected to the connecting pipe 1321.

[0049] It should be noted that the number of air inlets 121 can be two, four, or five, without limitation. Similarly, the number of air inlet pipes 132 can be two, four, or five, depending on the number of reaction sources, without limitation.

[0050] In the embodiment of the present application, the first cover plate 12 is provided with two air inlets 121 spaced apart from each other, and two corresponding air inlet end covers 131 are provided. Two sets of air inlet ducts 132 are provided, each set of air inlet ducts 132 including a connecting duct 1321 and a ventilation duct 1322. The connecting duct 1321 connects the two air inlet end covers 131, and the ventilation duct 1322 connects to the middle of the connecting duct 1321. At this time, the reaction source is divided into two from the middle of the connecting pipe 1321, and then flows into the two air inlet end covers 131 respectively from the connecting pipe 1321, and enters the air inlet 121 from the two air inlet end covers 131 and then enters the reaction chamber 111, so that the reaction source can be evenly divided to flow to the two air inlets 121. After entering the reaction chamber 111 through the air inlet 121, the reaction source can be more evenly diffused, so that the concentration distribution of the reaction source in the reaction chamber 111 is more uniform. At this time, the contact between the reactants and the reaction source is more uniform, which can make the film thickness consistency between the reactants better.

[0051] Specifically, when two air inlets 121 are provided on the first cover plate 12, the two air inlets 121 can be located at 1 / 3 of the first cover plate 12 in the direction of the spacing between the two air inlets 121. In this case, the air inlets 121 are evenly distributed on the first cover plate 12, and the reaction source can flow more evenly into the reaction chamber 111 through the air inlets 121. Therefore, after the reaction occurs in the reaction chamber 111, the film thickness between the reactants is also more uniform.

[0052] Please continue to refer to Figures 2 and 3. Furthermore, the air intake assembly 13 also includes a guide block 133. The guide block 133 is arranged on the side of the air intake end cover 131 facing the air inlet 121. The connecting end of the connecting pipe 1321 connected to the air intake end cover 131 is spaced apart and arranged on the periphery of the guide block 133. The setting of the guide block 133, on the one hand, can play a certain buffering role when the reaction source enters the air inlet 121, so as to avoid the reaction source flow rate being too fast and causing its uneven distribution, thereby affecting the overall reaction concentration in the reaction chamber 111; on the other hand, it can also play a certain auxiliary role in the diffusion of the reaction source, thereby making the reaction source concentration more uniform in the process of the reaction source diffusing into the reaction chamber 111 through the air inlet 121. Therefore, the setting of the guide block 133 can further improve the uniformity of the film thickness of the reactant.

[0053] It should be noted that the guide block 133 can be a conical setting, the guide block 133 can also be a cylindrical setting, and the guide block 133 can also be a setting of other shapes, which is not limited here.

[0054] Please continue to refer to Figures 2 to 4. In an embodiment of the present application, the reaction device 10 further includes a partition plate 15. The partition plate 15 is arranged between the flow plate 14 and the first cover plate 12, and a plurality of air inlet holes 151 are arranged in an array on the partition plate 15. Specifically, after the reaction source enters the first cover plate 12 from the air inlet 121, it flows into the flow plate 14 through the plurality of air inlet holes 151 on the partition plate 15, and passes through the flow plate 14 into the reaction chamber 111. Therefore, the setting of the partition plate 15 can, on the one hand, have a certain diffusion effect on the reaction source; on the other hand, the plurality of air inlet holes 151 are arranged in an array on the partition plate 15, which can make the reaction source diffuse more evenly when passing through the partition plate 15.

[0055] In order to guide the reaction source at the air inlet 121, in an embodiment of the present application, a sub-partition plate 152 is provided at the air inlet 121 of the partition plate 15. A plurality of guide holes (not shown) are arranged in an array on the sub-partition plate 152. Specifically, in the process of the reaction source flowing into the reaction chamber 111 from the air inlet 121, the reaction source is buffered by the guide block 133 and then flows from the air outlet end of the guide block 133 into the air inlet end of the sub-partition plate 152. The setting of the sub-partition plate 152 can make the reaction source after buffering at the guide block 133 evenly diffuse again to ensure the uniformity of the reaction source concentration in the entire reaction chamber 111. The sub-partition plate 152 is provided with a plurality of guide holes, which can also well assist the diffusion of the reaction source, thereby making the reaction source more uniform in the process of diffusing into the reaction chamber 111, and then the concentration distribution of the reaction source in the reaction chamber 111 is more uniform, and the contact between the reactant and the reaction source is more uniform, so the film thickness consistency between the reactants is better.

[0056] Please refer to Figure 6, which is another overall structural diagram of an embodiment of a reaction device of the present application. In an embodiment of the present application, the reaction device 10 also includes an exhaust assembly 16. The exhaust assembly 16 is arranged in the reaction chamber 11, and the exhaust assembly 16 includes a second cover plate (not shown) and an exhaust pipe 163. Wherein the second cover plate is covered on the second end 113 of the reaction chamber 11, and the second cover plate is provided with an exhaust port (not shown). The exhaust pipe 163 is arranged on the second cover plate, and the exhaust pipe 163 is connected to the exhaust port. At this time, the gas after the reaction in the reaction chamber 111 can be discharged through the exhaust port and the exhaust pipe 163 in sequence. At this time, there will be no gas after the reaction left in the reaction chamber 111, and the film thickness between the objects to be reacted in the reaction chamber 111 will not be affected.

[0057] In order to improve the efficiency of gas discharge after the reaction in the reaction chamber 111, in an embodiment of the present application, the reaction chamber 11 has a first side 1131 and a second side 1132 arranged opposite to each other at the second end 113, as well as a third side 1133 and a fourth side 1134 arranged opposite to each other. The second cover plate includes two semicircular plates 164 and an arc-shaped plate 165. The two semicircular plates 164 are respectively arranged on the first side 1131 and the second side 1132, and the two semicircular plates 164 are arranged to be inclined toward each other. The arc-shaped plate 165 connects the third side 1133 and the fourth side 1134, and connects the outer edges of the two semicircular plates 164. The exhaust port is arranged on the arc-shaped plate 165, and the arc-shaped plate 165 and the two semicircular plates 164 surround an exhaust cavity with a gradually decreasing inner diameter (not shown in the figure). Specifically, when the gas after the reaction in the reaction chamber 111 is discharged, the arc plate 165 and the two semicircular plates 164 can play a certain guiding role in the discharge of the gas. The gas discharged from the reaction chamber 111 to the exhaust component 16 can converge from the four sides to the middle and be discharged along the exhaust pipe 163, so as to avoid the gas at the periphery being far away from the exhaust pipe 163 and affecting its discharge efficiency. On the one hand, the efficiency of the entire exhaust process can be significantly improved to save exhaust time; on the other hand, the horizontal and vertical dead angle-free exhaust in the exhaust chamber can be achieved in any corner of the reaction chamber 111, thereby solving the problem of uniform distribution of pumping speed between the reactants.

[0058] It should be noted that, in other embodiments, the exhaust component 16 may also be other structures whose inner diameter gradually decreases toward the second end 113. When the inner diameter gradually decreases, the inner wall of the exhaust component 16 is inclined, thereby being able to play a certain guiding role on the gas in the exhaust component 16, so as to promote horizontal and vertical exhaust without dead angles in the exhaust cavity.

[0059] Please continue to refer to Figure 2. In other embodiments, the reaction equipment 10 is also provided with a temperature sensor 17, which is arranged at the top of the reaction chamber 11 for measuring the temperature in the reaction chamber 111, so as to better assist the production personnel in controlling the temperature in the reaction chamber 111. Specifically, when the temperature in the reaction chamber 111 is not enough, the production personnel can directly understand the specific temperature value in the reaction chamber 111 through the temperature sensor 17, and make appropriate adjustments to it so that the temperature in the reaction chamber 111 is the optimal temperature for the reaction source to react. Of course, when the temperature in the reaction chamber 111 is high, the production personnel can also make appropriate adjustments to the temperature in the reaction chamber 111 according to the temperature value transmitted by the temperature sensor 17 so that the temperature in the reaction chamber 111 is the optimal temperature. At this time, since the temperature in the reaction chamber 111 is the optimal temperature for the reaction source to react, the film thickness between the objects to be reacted in the reaction chamber 111 can also be more uniform.

[0060] In an embodiment of the present application, the reaction device 10 also includes a support 18, and the support 18 liftable cover is located at the bottom of the reaction chamber 11, and the support 18 is used to place the object to be reacted. The setting of the support 18 can make the object to be reacted be placed in the reaction chamber 111 more stably, to reduce the size of the gas flow resistance in the reaction chamber 111, and then make the film thickness between the objects to be reacted more uniform. It should be noted that the support 18 can be circular. When the support 18 is circular, there is usually no structure such as elbows or corners, so that the size of the gas flow resistance can be reduced, so that the film thickness between the objects to be reacted is more uniform. Of course, the support 18 can also adopt a non-circular structure, which will not be repeated here one by one.

[0061] Furthermore, the reaction device 10 also includes a sub-gas pipe 19 and an annular groove 191. The sub-gas pipe 19 is arranged on the side wall of the flow-distributing plate 14 for externally connecting inert gas. The annular groove 191 is arranged on the periphery of the first end 112 of the reaction chamber 11. The annular groove 191 is connected to the sub-gas pipe 19 to form an airtight seal. Since the flow-distributing plate 14 and the first end 112 of the reaction chamber 11 fit together, there will be some tiny gaps between the flow-distributing plate 14 and the first end 112 of the reaction chamber 11. When the reactants flow into the reaction chamber 111 through the air inlet 121, the sub-gas pipe 19 is arranged and externally connected to the inert gas. After the sub-gas pipe 19 and the annular groove 191 are connected, the inert gas forms an airtight seal in the annular groove 191, which can effectively prevent the reaction source from flowing out of the gap, thereby ensuring the concentration of the reaction source, reducing the gas flow resistance in the reaction chamber 111, and improving the uniformity of the film thickness between the reactants.

[0062] Furthermore, the reaction apparatus further includes fixing studs 110, which are disposed on both sides of the reaction chamber 11, and the height of the fixing studs 110 is not less than half the height of the reaction chamber 11. The provision of the fixing studs 110 can play a certain role in fixing the reaction chamber 11, making the entire structure more stable during the reaction of the reaction source in the reaction chamber 111.

[0063] In an embodiment of the present application, a semiconductor coating device is further provided, which includes the above reaction device 10 .

[0064] Please refer to Figure 7, which is a flow chart of an embodiment of a coating method of the present application. A coating method is provided in an embodiment of the present application. The coating method uses the reaction equipment 10 or semiconductor coating equipment in the above embodiment. The coating method includes: S1. Placing the reactant in the reaction chamber 11. S2. Inputting a reaction source through the air inlet assembly 13, and the reaction source passes through the first cover plate 12 and the flow plate 14 in sequence and then enters the reaction chamber 11.

[0065] During the entire coating process, the reaction source can be uniformly diffused into the reaction chamber 11 , thereby making the concentration distribution of the reaction source in the reaction chamber 11 more uniform, thereby ensuring the uniformity of the film thickness of the reactant.

[0066] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A reaction device, characterized in that: include: A reaction chamber, wherein a reaction cavity is formed inside and used to carry a substance to be reacted, wherein the reaction chamber comprises a first end and a second end which are arranged opposite to each other; A first cover plate, covering the first end; An air intake assembly, disposed on the first cover plate, the air intake assembly being in communication with the reaction chamber; A flow equalizer plate, disposed between the first cover plate and the reaction chamber; The arrangement direction of the first cover plate and the flow equalizer plate and the vertical axis of the reactant are perpendicular to each other, the wall surface of the flow equalizer plate facing the first cover plate is raised, and the wall surface of the first cover plate facing the flow equalizer plate is concave.

2. The reaction device according to claim 1, characterized in that: The side of the flow equalizer plate facing the first cover plate is an arc-shaped surface, and in the first direction, the distance between the flow equalizer plate and the first cover plate gradually increases from the middle to both ends.

3. The reaction device according to claim 2, characterized in that: The first cover plate has an arc-shaped surface on one side facing the flow equalizer plate, and in the second direction, the distance between the first cover plate and the flow equalizer plate gradually decreases from the middle to both ends, and the second direction intersects with the first direction.

4. The reaction device according to claim 2 or 3, characterized in that: The central angle of the arc surface is greater than 0° and less than or equal to 15°.

5. The reaction device according to claim 1, characterized in that: At least two air inlets are spaced apart on the first cover plate, and the air inlet assembly comprises: An air intake end cover, at least two of which are correspondingly provided, and the air intake end cover is provided on the air intake port; The air intake pipe is provided with at least two groups, each group of the air intake pipe comprises a connecting pipe and a ventilation pipe, wherein the connecting pipe is connected to each of the air intake end covers, and the ventilation pipe is connected to the connecting pipe.

6. The reaction device according to claim 5, characterized in that: The first cover plate is provided with two air inlets, which are spaced apart from each other, and two air inlet end covers are correspondingly provided. Two groups of air inlet pipes are provided, and each group of air inlet pipes includes a connecting pipe and a ventilation pipe. The connecting pipe connects the two air inlet end covers, and the ventilation pipe connects to the middle of the connecting pipe.

7. The reaction device according to claim 5, characterized in that: In the spacing arrangement direction of the two air inlets, the two air inlets are respectively located at 1 / 3 of the first cover plate.

8. The reaction device according to claim 5, characterized in that: The air intake assembly further comprises a guide block, which is arranged on the side of the air intake end cover facing the air intake port, and the connection end of the connecting pipe connected to the air intake end cover is arranged at intervals on the periphery of the guide block.

9. The reaction device according to claim 8, characterized in that: The reaction device further comprises a partition plate, wherein the partition plate is arranged between the flow-distributing plate and the first cover plate, and a plurality of air inlet holes are arranged in an array on the partition plate.

10. The reaction device according to claim 9, characterized in that: A sub-partition plate is arranged at the partition plate corresponding to the air inlet, and a plurality of guide holes are arranged in an array on the sub-partition plate.

11. The reaction device according to claim 1, characterized in that: The reaction device further includes an exhaust component, which is disposed in the reaction chamber and includes: A second cover plate, disposed on the second end of the reaction chamber, wherein the second cover plate is provided with an exhaust port; An exhaust pipe is arranged on the second cover plate, and the exhaust pipe is communicated with the exhaust port.

12. The reaction device according to claim 11, characterized in that: The reaction chamber has a first side and a second side disposed opposite to each other, and a third side and a fourth side disposed opposite to each other at the second end, and the second cover plate comprises: Two semicircular plates are respectively arranged on the first side and the second side, and the two semicircular plates are arranged to be inclined toward each other; The arc plate connects the third side and the fourth side and connects the outer edges of the two semicircular plates. The exhaust port is arranged on the arc plate. The arc plate and the two semicircular plates surround an exhaust cavity with a gradually decreasing inner diameter.

13. The reaction device according to claim 1, characterized in that: The reaction equipment comprises a temperature sensor, which is arranged on the top of the reaction chamber and is used to measure the temperature of the reaction chamber.

14. The reaction device according to claim 1, characterized in that: The reaction equipment also includes: A secondary gas pipeline is arranged on the side wall of the flow equalizer plate and is used for externally connecting an inert gas; An annular groove is arranged on the outer periphery of the first end of the reaction chamber, and the annular groove is communicated with the sub-gas pipeline to form an airtight seal.

15. The reaction device according to claim 1, characterized in that: The reaction equipment further comprises fixing studs, which are arranged on both sides of the reaction chamber, and the height of the fixing studs is not less than half of the height of the reaction chamber.

16. A semiconductor coating device, characterized in that: The semiconductor coating equipment comprises the reaction equipment described in any one of claims 1-15.

17. A coating method, characterized in that: The coating method adopts the reaction device according to any one of claims 1 to 15 or the semiconductor coating device according to claim 16, and the coating method comprises: Placing the reactant in the reaction chamber; The reaction source is input through the air intake assembly, and the reaction source passes through the first cover plate and the flow equalizer plate in sequence and then enters the reaction chamber.

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