Detection device

Abstract

This detection device comprises: a substrate; an inorganic insulating film, an organic insulating film, and a barrier film laminated on the substrate; an organic light sensor in which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are laminated in this order in a detection region of the substrate; and a first inorganic sealing film covering the organic light sensor. In the detection region, the inorganic insulating film, the organic insulating film, the barrier film, the organic light sensor, and the first inorganic sealing film are laminated in this order. In a peripheral region outside the detection region, the inorganic insulating film, the organic insulating film, the barrier film, and the first inorganic sealing film are laminated in this order. On the outer edge side of the substrate, the side surface of the organic insulating film and the side surface of the inorganic insulating film are located closer to the detection region side than the side surface of the substrate, and the side surface of the organic insulating film and the side surface of the inorganic insulating film are covered by the first inorganic sealing film.

Description

Detection Device

[0001] The present invention relates to a detection device.

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (see, for example, Patent Document 1). Such optical sensors have multiple photodiodes (OPDs: Organic Photodiodes) that use an organic semiconductor material as an active layer. As described in Patent Document 2, the photodiodes are stacked, for example, in the following order: a lower electrode, an electron transport layer, an active layer, a hole transport layer, and an upper electrode. The electron transport layer or the hole transport layer is also called a buffer layer.

[0003] JP 2009-32005 A International Publication No. 2020 / 188959

[0004] In a detection device having an OPD, if moisture enters the detection area where the OPD is provided from outside the detection device, the detection accuracy may be reduced.

[0005] An object of the present invention is to provide a detection device that can prevent moisture from entering.

[0006] A detection device according to one embodiment of the present invention comprises a substrate, an inorganic insulating film, an organic insulating film, and a barrier film stacked on the substrate, an organic photosensor having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode stacked in this order in a detection region of the substrate, and a first inorganic sealing film covering the organic photosensor, wherein the inorganic insulating film, the organic insulating film, the barrier film, the organic photosensor, and the first inorganic sealing film are stacked in this order in the detection region, and the inorganic insulating film, the organic insulating film, the barrier film, and the first inorganic sealing film are stacked in this order in a peripheral region outside the detection region, and at the outer edge of the substrate, the side surfaces of the organic insulating film and the inorganic insulating film are located closer to the detection region than the side surfaces of the substrate, and the side surfaces of the organic insulating film and the inorganic insulating film are covered with the first inorganic sealing film.

[0007] A detection device of one embodiment of the present invention includes a substrate, an inorganic insulating film, an organic insulating film, and a barrier film stacked on the substrate, an organic photosensor having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode stacked in this order in a detection region of the substrate, and a first inorganic sealing film covering the organic photosensor, wherein the inorganic insulating film, the organic insulating film, the barrier film, the organic photosensor, and the first inorganic sealing film are stacked in this order in the detection region, and the inorganic insulating film, the organic insulating film, the barrier film, and the first inorganic sealing film are stacked in this order in a peripheral region outside the detection region, and the peripheral region has a plurality of grooves formed on an upper surface of the organic insulating film and extending along the outer edge of the substrate in a planar view.

[0008] FIG. 1 is a plan view schematically showing a detection device according to an embodiment. FIG. 2 is a block diagram showing an example of the configuration of a detection device according to an embodiment. FIG. 3 is a circuit diagram showing a detection device according to an embodiment. FIG. 4 is a plan view schematically showing a plurality of photodiodes in a detection region and a plurality of grooves in a peripheral region. FIG. 5 is a cross-sectional view taken along VV' in FIG. 4. FIG. 6 is a cross-sectional view taken along VI-VI' in FIG. 4. FIG. 7 is a cross-sectional view schematically showing a detection device according to a comparative example. FIG. 8 is a plan view schematically showing a detection device before its outer shape is cut. FIG. 9 is a cross-sectional view taken along IX-IX' in FIG. 8.

[0009] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the present disclosure are naturally included within the scope of the present disclosure. Furthermore, for clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present disclosure. Furthermore, in this disclosure and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] In this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0011] 1 is a plan view schematically showing a detection device according to an embodiment. As shown in Fig. 1, the detection device 1 includes a substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. The first light source substrate 51 is provided with a plurality of light sources 53. The second light source substrate 52 is provided with a plurality of light sources 54.

[0012] A control board 121 is electrically connected to the substrate 21 via a wiring board 71. The wiring board 71 is, for example, a flexible printed circuit board or a rigid board. The wiring board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 3), to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. Furthermore, the power supply circuit 123 supplies a power supply voltage to the light sources 53 and 54 .

[0013] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where multiple photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the outer edge of the substrate 21, where multiple photodiodes PD are not provided.

[0014] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0015] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular to it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is the normal direction to the main surface of the substrate 21. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21.

[0016] The plurality of light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0017] For example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs) are used as the light sources 53 and 54. The light sources 53 and 54 emit light of different wavelengths.

[0018] The first light emitted from the light source 53 is mainly reflected by the surface of the object to be detected, such as a finger, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger or the like. The second light emitted from the light source 54 is mainly reflected by the inside of the finger or the like or passes through the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger or the like. The information about the living body includes, for example, the pulse wave, pulse rate, and blood vessel image of the finger or palm. In other words, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0019] The arrangement of the light sources 53, 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources 53, 54 as light sources. However, this is not limited to this, and the light source may be of one type. For example, multiple light sources 53 and multiple light sources 54 may be arranged on the first light source substrate 51 and the second light source substrate 52, respectively. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0020] 2 is a block diagram showing an example of the configuration of a detection device according to an embodiment. As shown in FIG. 2, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. Some or all of the functions of the detection control circuit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0021] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output electrical signals corresponding to the incident light as detection signals Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with a gate drive signal VGL supplied from the gate line drive circuit 15.

[0022] The detection control circuit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the gate line drive circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control circuit 11 also supplies various control signals to the light sources 53 and 54, and controls the lighting and non-lighting of each.

[0023] The gate line driving circuit 15 is a circuit that drives a plurality of gate lines GL (see FIG. 3) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GL and supplies a gate driving signal VGL to the selected gate lines GL. In this way, the gate line driving circuit 15 selects a plurality of photodiodes PD connected to the gate lines GL.

[0024] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SL (see FIG. 3 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0025] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 based on a control signal supplied from the detection control circuit 11 so that they operate in synchronization with each other.

[0026] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit that has at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0027] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing circuit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0028] The memory circuit 46 temporarily stores the signals calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0029] The coordinate extraction circuit 45 is a logic circuit that calculates the detected coordinates of the unevenness of the surface of a finger or the like when the signal processing circuit 44 detects contact or proximity of a finger. The coordinate extraction circuit 45 is also a logic circuit that calculates the detected coordinates of the blood vessels of the finger or palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or palm. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates.

[0030] Fig. 3 is a circuit diagram showing a detection device according to an embodiment. Fig. 3 also shows the circuit configuration of a detection circuit 48. As shown in Fig. 3, a sensor pixel PX includes a photodiode PD, a capacitance element Ca, and a drive transistor Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0031] 3 shows two gate lines GL(m) and GL(m+1) arranged in the second direction Dy among the multiple gate lines GL. Also, two signal lines SL(n) and SL(n+1) arranged in the first direction Dx among the multiple signal lines SL. A sensor pixel PX is an area surrounded by the gate line GL and the signal line SL.

[0032] The drive transistors Tr are provided corresponding to the respective photodiodes PD. The drive transistors Tr are configured by thin film transistors, and in this example, are configured by n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0033] Each of the gate lines GL is connected to the gates of a plurality of drive transistors Tr arranged in a first direction Dx. Each of the signal lines SL is connected to one of the source and drain of a plurality of drive transistors Tr arranged in a second direction Dy. The other of the source and drain of each of the drive transistors Tr is connected to the cathode of the photodiode PD and the capacitance element Ca.

[0034] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 123 (see FIG. 1 ). A sensor reference voltage COM, which serves as the initial potential of the signal line SL and the capacitance element Ca, is supplied to the signal line SL and the capacitance element Ca from the power supply circuit 123 via the reset transistor TrR.

[0035] When light is irradiated onto the sensor pixel PX during the exposure period, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the drive transistor Tr is turned on during the readout period, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SL. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each sensor pixel PX.

[0036] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SL. The detection signal amplifier circuit 42 of the detection circuit 48 converts the current or charge supplied from the signal line SL into a voltage corresponding to the current or charge. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier circuit 42, and the signal line SL is connected to the inverting input terminal (-). In this embodiment, a signal equal to the sensor reference voltage COM is input as the reference potential (Vref) voltage. The control circuit 122 (see FIG. 1) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier circuit 42 also includes a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, resetting the charge in the capacitance element Cb.

[0037] The driving transistor Tr is not limited to an n-type TFT, but may be a p-type TFT. The pixel circuit of the sensor pixel PX shown in Fig. 3 is merely an example, and the sensor pixel PX may be provided with multiple transistors corresponding to one photodiode PD.

[0038] 4 to 6, the configurations of the photodiodes PD, the sealing film 90, and the plurality of grooves 26G will be described. Fig. 4 is a plan view schematically showing the plurality of photodiodes in the detection region and the plurality of grooves in the peripheral region.

[0039] As shown in FIG. 4 , multiple photodiodes PD (organic photosensors) are arranged in a matrix in the detection area AA. Each photodiode PD includes a lower electrode 31, a lower buffer layer 32, an active layer 33, an upper buffer layer 34, and an upper electrode 35. The multiple lower electrodes 31 are spaced apart for each of the photodiodes PD and arranged in a matrix in the detection area AA. The lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are continuously provided across the multiple photodiodes PD and are provided throughout the entire detection area AA. A portion of the upper electrode 35 extends into the peripheral area GA, is connected to a contact portion CN, and is electrically connected to an external circuit (e.g., a control circuit 122 or a power supply circuit 123 (see FIG. 1 )) through wiring on the substrate 21.

[0040] The detection device 1 has a sealing film 90 that covers the multiple photodiodes PD. The sealing film 90 is provided across the detection area AA and the peripheral area GA, and is provided up to the outer edge side of the substrate 21. A plurality of grooves 26G is also provided in the peripheral area GA. The sealing film 90 is provided to cover the multiple grooves 26G. The sealing film 90 and the multiple grooves 26G can prevent moisture from entering from the outer edge side of the substrate 21 to the detection area AA side. The detailed configurations of the sealing film 90 and the multiple grooves 26G will be described later with reference to FIG. 6.

[0041] The plurality of grooves 26G are provided around the outer periphery of the detection area AA. Each of the plurality of grooves 26G has a continuous frame shape. However, FIG. 4 is merely a schematic illustration, and the plurality of grooves 26G may not be provided in some portions along the outer periphery of the detection area AA. The wiring board 71 shown in FIG. 1 may be connected to terminals provided on the substrate 21 outside the plurality of grooves 26G, or may be connected to terminals provided on the substrate 21 through openings provided in the sealing film 90.

[0042] Next, a description will be given of the laminated structure of the plurality of photodiodes PD and the sealing film 90 of the detection device 1. Fig. 5 is a cross-sectional view taken along line VV' in Fig. 4 .

[0043] In the following description, the direction perpendicular to the surface of the substrate 21, from the substrate 21 toward the sealing film 90, will be referred to as the "upper side" or simply "upper." The direction from the sealing film 90 toward the substrate 21 will be referred to as the "lower side" or simply "lower."

[0044] 5 , the detection device 1 includes a substrate 21, a drive transistor Tr, a plurality of inorganic insulating films (an undercoat film 22, a gate insulating film 23, an interlayer insulating film 24, and a superimposed insulating film 25), an organic insulating film 26, a barrier film 27, a photodiode PD, and a sealing film 90. In the detection area AA, a plurality of inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25), the organic insulating film 26, the barrier film 27, the photodiode PD, and the sealing film 90 (a first inorganic sealing film 91, an organic sealing film 92, and a second inorganic sealing film 93) are stacked in this order on the substrate 21.

[0045] The substrate 21 is an insulating substrate made of a film-like resin. The driving transistor Tr is provided in a region overlapping with the lower electrode 31 of the photodiode PD. Specifically, the driving transistor Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64.

[0046] The light-shielding film 65 is provided on the substrate 21. The light-shielding film 65 is provided between the semiconductor layer 61 and the substrate 21. The light-shielding film 65 prevents light from entering the channel region of the semiconductor layer 61 from the substrate 21 side.

[0047] The undercoat film 22 is provided on the substrate 21, covering the light-shielding film 65. The undercoat film 22 is formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The configuration of the undercoat film 22 is not limited to that shown in FIG. 5. For example, the undercoat film 22 may be a laminated film having two or more layers stacked on top of each other.

[0048] The drive transistor Tr is provided on a substrate 21. The semiconductor layer 61 is provided on an undercoat film 22. The gate insulating film 23 is provided on the undercoat film 22, covering the semiconductor layer 61. The gate insulating film 23 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 23.

[0049] 5, the driving transistor Tr has a top gate structure. However, the present invention is not limited to this, and the driving transistor Tr may have a bottom gate structure or a dual gate structure in which gate electrodes 64 are provided on both the upper and lower sides of the semiconductor layer 61.

[0050] The interlayer insulating film 24 is provided on the gate insulating film 23, covering the gate electrode 64. The interlayer insulating film 24 has, for example, a stacked structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 24. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a contact hole CH2 provided through the gate insulating film 23 and the interlayer insulating film 24. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a contact hole CH3 provided through the gate insulating film 23 and the interlayer insulating film 24. The superposed insulating film 25 is provided on the interlayer insulating film 24, covering the source electrode 62 and the drain electrode 63.

[0051] A connection wiring 64a is provided in the same layer as the gate electrode 64. The connection wiring 64a is electrically connected to the gate electrode 64. A connection wiring 65a is provided in the same layer as the light-shielding film 65. The connection wiring 65a is electrically connected to the light-shielding film 65. The connection wiring 64a and the connection wiring 65a are connected via a contact hole CH4 that penetrates the undercoat film 22 and the gate insulating film 23. As a result, the light-shielding film 65 is electrically connected to the gate electrode 64 via the connection wirings 64a, 65a, and is supplied with the same potential as the gate electrode 64.

[0052] The organic insulating film 26 is provided on the superposed insulating film 25, covering the source electrode 62 and the drain electrode 63 of the drive transistor Tr. The organic insulating film 26 is a planarizing film made of an organic insulating material. In this embodiment, a contact hole CH1 in the organic insulating film 26 is provided in a region overlapping with the source electrode 62. The lower electrode 31 of the photodiode PD is electrically connected to the source electrode 62 at the bottom of the contact hole CH1.

[0053] The detection device 1 may be configured such that the superimposed insulating film 25 of the inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25) is not provided. In this case, the organic insulating film 26 is provided on the interlayer insulating film 24, covering the source electrode 62 and the drain electrode 63.

[0054] The barrier film 27 is provided on the organic insulating film 26. The barrier film 27 is made of an inorganic insulating material such as silicon nitride (SiN).

[0055] The photodiode PD is provided on the barrier film 27. The photodiode PD has a lower electrode 31, a lower buffer layer 32, an active layer 33, an upper buffer layer 34, and an upper electrode 35 stacked in this order in a direction perpendicular to the substrate 21. The photodiode PD of this embodiment is an organic photodiode (OPD) in which an organic semiconductor is used as the active layer 33.

[0056] The lower electrode 31 is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide). The lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are provided continuously across the multiple photodiodes PD. Specifically, the lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are provided so as to overlap the lower electrode 31 and also so as to overlap the barrier film 27 located between adjacent lower electrodes 31.

[0057] The insulating film 36 is provided to cover the periphery of the lower electrode 31. The insulating film 36 is also provided to cover the contact hole CH1, and covers the lower electrode 31 in the region overlapping with the contact hole CH1. The insulating film 36 insulates the lower electrodes 31 of adjacent photodiodes PD. Even if a step occurs in the lower buffer layer 32 in the region overlapping with the contact hole CH1, the insulating film 36 is provided, so that the occurrence of a short circuit between the active layer 33 and the lower electrode 31 can be suppressed. In this embodiment, the insulating film 36 is a silicon nitride film (SiN) or a silicon oxide film (SiO ２ ) or other inorganic insulating materials.

[0058] The characteristics (for example, voltage-current characteristics and resistance value) of the active layer 33 change depending on the light irradiated thereto. An organic material is used as the material of the active layer 33. Specifically, the active layer 33 has a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. For example, a low-molecular organic material, C ６０ (fullerene), PCBM (phenyl C ６１ Butyric acid methyl ester: Phenyl C 61 -butyric acid methyl ester), CuPc (Copper Phthalocyanine), F １６ CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (a derivative of perylene), or the like can be used.

[0059] The active layer 33 can be formed by a vapor deposition (dry process) using these low molecular weight organic materials. In this case, the active layer 33 is formed by, for example, CuPc and F １６ CuPc laminated film or rubrene and C ６０The active layer 33 may be a laminated film of the above-mentioned low molecular weight organic material and high molecular weight organic material. The active layer 33 may also be formed by a wet process. In this case, the active layer 33 is made of a material that combines the above-mentioned low molecular weight organic material and high molecular weight organic material. Examples of high molecular weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 33 may be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed. The active layer 33 is not limited to a bulk heterostructure and may be a PIN type.

[0060] The lower buffer layer 32 and the upper buffer layer 34 are provided to allow holes and electrons generated in the active layer 33 to easily reach the lower electrode 31 or the upper electrode 35. The lower buffer layer 32 is provided between the lower electrode 31 and the active layer 33, and is in direct contact with the lower electrode 31 and the active layer 33. The lower buffer layer 32 is also provided between adjacent lower electrodes 31, covering the barrier film 27.

[0061] The upper buffer layer 34 is provided between the active layer 33 and the upper electrode 35, and is in direct contact with the active layer 33 and the upper electrode 35. The upper electrode 35 is provided on the upper buffer layer 34. The upper electrode 35 is formed of a light-transmitting conductive material such as ITO or IZO. However, without being limited thereto, the upper electrode 35 may also be formed of a light-non-transmitting conductive material such as silver (Ag).

[0062] In this embodiment, the lower electrode 31 is the cathode electrode of the photodiode PD, and the upper electrode 35 is the anode electrode of the photodiode PD. In this case, the lower buffer layer 32 is an electron transport layer, and the upper buffer layer 34 is a hole transport layer. The material of the electron transport layer is ethoxylated polyethyleneimine (PEIE). The material of the hole transport layer is a metal oxide layer. As the metal oxide layer, tungsten oxide (WO ３ ), molybdenum oxide, etc. are used.

[0063] The lower electrode 31 may be the anode electrode of the photodiode PD, and the upper electrode 35 may be the cathode electrode of the photodiode PD. In this case, the lower buffer layer 32 may be a hole transport layer, and the upper buffer layer 34 may be an electron transport layer.

[0064] The sealing film 90 is provided on the upper electrode 35. Specifically, the sealing film 90 is formed by stacking a first inorganic sealing film 91, an organic sealing film 92, and a second inorganic sealing film 93 in this order on the upper electrode 35. The first inorganic sealing film 91 and the second inorganic sealing film 93 are formed of inorganic films such as silicon nitride films and aluminum oxide films. The organic sealing film 92 is formed of a resin film such as acrylic. The sealing film 90 effectively seals the photodiode PD and can prevent moisture from entering from the upper surface side.

[0065] Next, the configuration of the sealing film 90 and the multiple grooves 26G in the peripheral area GA will be described. Figure 6 is a cross-sectional view taken along line VI-VI' in Figure 4. For ease of understanding, Figure 6 shows the configuration of the peripheral area GA as well as the stacked configuration of the multiple inorganic insulating films, organic insulating film 26, barrier film 27, photodiode PD, and sealing film 90 in the detection area AA. The configuration of the detection area AA in Figure 6 is the same as that described in Figure 5, and therefore a repeated description will be omitted.

[0066] 6 shows the undercoat film 22, which is the lowest layer, and the superimposed insulating film 25, which is the highest layer, among the plurality of inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25), and omits illustration of the intermediate layers, the gate insulating film 23, and the interlayer insulating film 24. In the following description, the superimposed insulating film 25, which is the highest layer among the plurality of inorganic insulating films, is shown, but the description of the superimposed insulating film 25 may also refer to a stacked film from the undercoat film 22 to the superimposed insulating film 25.

[0067] 6 , the superimposed insulating film 25, the organic insulating film 26, the barrier film 27, and the sealing film 90 are provided across the detection area AA and the peripheral area GA. That is, in the detection area AA, the superimposed insulating film 25 (inorganic insulating film), the organic insulating film 26, the barrier film 27, the photodiode PD (organic photosensor), and the sealing film 90 (first inorganic sealing film 91, organic sealing film 92, second inorganic sealing film 93) are stacked in this order. In the peripheral area GA outside the detection area AA, the superimposed insulating film 25, the organic insulating film 26, the barrier film 27, and the sealing film 90 (first inorganic sealing film 91, organic sealing film 92, second inorganic sealing film 93) are stacked in this order.

[0068] In this embodiment, the peripheral area GA has a plurality of grooves 26G formed on the upper surface of the organic insulating film 26. As described above with reference to FIG. 4, the plurality of grooves 26G extend along the outer edge of the substrate 21 in a plan view. In the example shown in FIG. 6, four grooves 26G-1, 26G-2, 26G-3, and 26G-4 are arranged from the outer edge side of the substrate 21 toward the detection area AA. In the following description, when there is no need to distinguish between the four grooves 26G-1, 26G-2, 26G-3, and 26G-4, they will be simply referred to as grooves 26G. The number of grooves 26G is not limited to four, and may be one to three, or five or more.

[0069] Each of the multiple grooves 26G penetrates from the top surface to the bottom surface of the organic insulating film 26, with the superimposed insulating film 25 forming the bottom of the groove 26G. The barrier film 27 is provided along the top surface of the organic insulating film 26 and the side and bottom surfaces of the multiple grooves 26G. The superimposed insulating film 25 and the barrier film 27 are in direct contact with each other at the bottom of the groove 26G. The width W1 of each of the multiple grooves 26G is 50 μm or more. This improves the adhesion between the superimposed insulating film 25 and the barrier film 27 at the bottom of the groove 26G. Here, the width W1 of the groove 26G is the width W1 of the bottom of the groove 26G, and is the length of the portion where the superimposed insulating film 25 and the barrier film 27 contact each other between adjacent organic insulating films 26.

[0070] The sealing film 90 is provided across the area overlapping with the plurality of grooves 26G in the peripheral area GA. In the sealing film 90, the outer edge of the organic sealing film 92 is located more inward (toward the detection area AA) than the outer edge of the first inorganic sealing film 91 and the second inorganic sealing film 93. The second inorganic sealing film 93 of the sealing film 90 is provided to cover the organic sealing film 92 and is provided outside the organic sealing film 92 in direct contact with the first inorganic sealing film 91.

[0071] Of the multiple grooves 26G, grooves 26G-3 and 26G-4 on the detection area AA side are covered with a first inorganic sealing film 91, an organic sealing film 92, and a second inorganic sealing film 93. That is, in the regions overlapping with grooves 26G-3 and 26G-4, the superimposed insulating film 25, the barrier film 27, and the sealing film 90 (first inorganic sealing film 91, organic sealing film 92, second inorganic sealing film 93) are stacked in this order. The first inorganic sealing film 91 of the sealing film 90 covers the barrier film 27 and is provided along the upper surface of the organic insulating film 26 and the side and bottom portions of the multiple grooves 26G-3 and 26G-4. The organic sealing film 92 of the sealing film 90 is provided to fill the grooves 26G-3 and 26G-4.

[0072] The other grooves 26G-1 and 26G-2 on the outer edge side of the substrate 21 are covered with a first inorganic sealing film 91 and a second inorganic sealing film 93. Furthermore, in regions overlapping with the grooves 26G-1 and 26G-2 on the outer edge side of the substrate 21, the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25), the barrier film 27, the first inorganic sealing film 91, and the second inorganic sealing film 93 are laminated in this order. The first inorganic sealing film 91 and the second inorganic sealing film 93 of the sealing film 90 cover the barrier film 27 and are provided along the upper surface of the organic insulating film 26 and the side surfaces and bottoms of the multiple grooves 26G-1 and 26G-2.

[0073] In this way, in the peripheral area GA, the plurality of grooves 26G of the organic insulating film 26 and the sealing film 90 are provided, so that at least in the grooves 26G-1 and 26G-2, an area is formed in which a plurality of inorganic insulating films are stacked without having an organic film (organic insulating film 26 and organic sealing film 92). As a result, in the grooves 26G-1 and 26G-2, a blocking structure for preventing moisture from entering is formed between the outer edge side of the substrate 21 and the detection area AA.

[0074] Furthermore, in this embodiment, since the organic insulating film 26 is provided with the plurality of grooves 26G, the length along the surface of the organic insulating film 26, specifically the total length along the top surface of the organic insulating film 26 and the side and bottom portions of the plurality of grooves 26G, is longer than when the plurality of grooves 26G is not provided. This lengthens the path along which moisture can penetrate from the outer edge side of the substrate 21 to the detection area AA, thereby suppressing moisture penetration into the detection area AA.

[0075] 6 , in the detection device 1 of this embodiment, on the outer edge side of the substrate 21, the side surface 26 s of the organic insulating film 26 and the side surface 25 s of the superimposed insulating film 25 (including the side surface 22 s of the undercoat film 22 to the side surface 25 s of the superimposed insulating film 25) are located closer to the detection region AA than the side surface 21 s of the substrate 21. In addition, the side surface 26 s of the organic insulating film 26 is located closer to the detection region AA than the side surface 25 s of the superimposed insulating film 25.

[0076] In other words, steps are formed along the upper surface and side surface 26s of the organic insulating film 26, the upper surface and side surface 25s of the superimposed insulating film 25, and the upper surface and side surface 21s of the substrate 21. On the outer edge side of the substrate 21, the upper surface of the superimposed insulating film 25 has a region where the organic insulating film 26 is not provided, between the side surface 25s and the side surface 26s of the organic insulating film 26. In addition, the upper surface of the substrate 21 has a region where the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25) is not provided, between the side surface 21s and the side surface 22s of the undercoat film 22.

[0077] The barrier film 27 contacts the superimposed insulating film 25 (inorganic insulating film) on the outer edge side of the substrate 21. More specifically, the barrier film 27 is provided to cover the upper surface and side surface 26s of the organic insulating film 26 on the outer edge side of the substrate 21. Furthermore, the barrier film 27 contacts the upper surface of the superimposed insulating film 25 between the side surface 26s of the organic insulating film 26 and the side surface 25s of the superimposed insulating film 25. Furthermore, the barrier film 27 and the superimposed insulating film 25 are provided in direct contact with each other on the outer edge side of the substrate 21. A width W2 of the contact portion between the side surface 26s of the organic insulating film 26 and the side surface 25s of the superimposed insulating film 25 is 3 μm or more. This ensures adhesion between the barrier film 27 and the superimposed insulating film 25 on the outer edge side of the substrate 21. This configuration forms a blocking structure that prevents moisture from entering from the outer edge side of the substrate 21.

[0078] Of the sealing film 90, the first inorganic sealing film 91 and the second inorganic sealing film 93 extend beyond the groove 26G-1 to the outer edge side of the substrate 21 and are provided so as to overlap with the barrier film 27. In other words, on the outer edge side of the substrate 21, the top surface and side surface 26s of the organic insulating film 26 and the side surface 25s of the superimposed insulating film 25 are covered with the first inorganic sealing film 91 and the second inorganic sealing film 93.

[0079] Furthermore, on the outer edge side of the substrate 21, residues 26R of the organic insulating film 26 and residues 33R of the active layer 33 of the photodiode PD are provided on side surfaces 25s of the superimposed insulating film 25 (including the side surfaces 22s of the undercoat film 22 and the side surfaces 25s of the superimposed insulating film 25). The residues 26R of the organic insulating film 26 and the residues 33R of the active layer 33 are formed in the manufacturing process of the substrate 21. The residues 26R of the organic insulating film 26 and the residues 33R of the active layer 33 will be described later with reference to FIG. 9 .

[0080] In this embodiment, the side surface 26s of the organic insulating film 26 is located closer to the detection area AA than the side surface 25s of the superimposed insulating film 25, and the residue 26R of the organic insulating film 26 is provided at a distance from the organic insulating film 26 on the superimposed insulating film 25. The barrier film 27 is provided so as to cover at least a portion of the residue 26R of the organic insulating film 26. Furthermore, the residue 26R of the organic insulating film 26 and the residue 33R of the active layer 33 are covered with the first inorganic sealing film 91 and the second inorganic sealing film 93.

[0081] With this configuration, the residues 26R of the organic insulating film 26 and the residues 33R of the active layer 33 are separated from the organic insulating film 26, so that no path for moisture to penetrate is formed on the outer edge side of the substrate 21 via the residues 26R of the organic insulating film 26 and the residues 33R of the active layer 33. Therefore, even when the residues 26R of the organic insulating film 26 and the residues 33R of the active layer 33 are provided, the detection device 1 can suppress moisture penetration from the outer edge side of the substrate 21.

[0082] Here, a detection device 200 according to a comparative example will be described with reference to FIG. 7. FIG. 7 is a cross-sectional view schematically showing the detection device according to the comparative example. In the detection device 200 according to the comparative example shown in FIG. 7, the configuration of the detection area AA is the same as that of the detection device 1 according to this embodiment, and the same components as those described in the above-mentioned embodiment are assigned the same reference numerals, and redundant description will be omitted. FIG. 9 also shows the detection device before the outer shape is cut. The detection device according to the comparative example is formed by cutting along the outer shape cut lines L1 and L2. The outer shape cut lines L1 and L2 will be described in FIGS. 8 and 9.

[0083] 7 , in the peripheral area GA, the upper surface of the organic insulating film 26 is formed flat, and multiple grooves 26G are not formed. Furthermore, on the outer edge side of the substrate 21, the side surface 26s of the organic insulating film 26 and the side surface of the inorganic insulating film (from the side surface 22s of the undercoat film 22 to the side surface 25s of the superimposed insulating film 25) form the same plane. That is, in the comparative example, no steps are formed along the organic insulating film 26 and the superimposed insulating film 25 on the outer edge side of the substrate 21.

[0084] In this case, the grooves 55A, 56A provided in the regions overlapping the outline cut lines L1 and L2 may be formed deep, and the lower portions of the side surfaces 26s of the organic insulating film 26 may not be covered by the barrier film 27. Furthermore, if residues 26R of the organic insulating film 26 and residues 33R of the active layer 33 are present in the grooves 55A, 56A, at least one of the residues 26R of the organic insulating film 26 and the residues 33R of the active layer 33 may be formed in contact with the side surfaces 26s of the organic insulating film 26. This creates an intrusion path R1 for external moisture on the outer edge side of the substrate 21, as indicated by the dashed-dotted arrow. External moisture may travel along the intrusion path R1 through the residues 26R of the organic insulating film 26 and the side surfaces 26s of the organic insulating film 26, and then penetrate into the organic insulating film 26 toward the detection area AA.

[0085] 6 , the side surface 26s of the organic insulating film 26 and the side surface 25s of the superimposed insulating film 25 are covered with the first inorganic sealing film 91 and the second inorganic sealing film 93. Furthermore, on the outer edge side of the substrate 21, the barrier film 27 contacts the upper surface of the superimposed insulating film 25 between the side surface 26s of the organic insulating film 26 and the side surface 25s of the superimposed insulating film 25. This forms a blocking structure for the moisture intrusion path on the outer edge side of the substrate 21, and the detection device 1 can suppress the intrusion of moisture from the outer edge side of the substrate 21.

[0086] Next, a manufacturing method of the detection device 1 will be described. FIG. 8 is a plan view schematically showing the detection device before the outer shape is cut. FIG. 9 is a cross-sectional view taken along line IX-IX' in FIG. 8. As shown in FIGS. 8 and 9, in the detection device 100 before the outer shape is cut, the substrate 21 is bonded onto a support substrate 101 made of glass or the like. The detection device 1 of this embodiment is formed by cutting the detection device 100 before the outer shape is cut along the outer shape cut lines L1 and L2.

[0087] Before the outer shape is cut, the detection device 100 has a groove 55 formed at a position overlapping the outer shape cut line L1, and a groove 56 formed at a position overlapping the outer shape cut line L2. The grooves 55 and 56 are formed by removing the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25) and the organic insulating film 26, respectively, on the substrate 21.

[0088] The manufacturing process of the detection device 100 before the outline cutting will be described below. First, in the manufacturing process of the detection device 100 before the outline cutting, grooves 55a and 56a are formed in the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25) in regions that overlap with the outline cut lines L1 and L2 on the substrate 21. This makes it possible to prevent cracks from occurring in the inorganic insulating film during the outline cutting.

[0089] The organic insulating film 26 is applied over the entire detection area AA and peripheral area GA, covering the superimposed insulating film 25 and the grooves 55a and 56a. The organic insulating film 26 is then patterned by etching or the like to form a plurality of grooves 26G in the peripheral area GA of the substrate 21, and grooves 55b and 56b in areas overlapping with the outline cut lines L1 and L2, respectively. At this time, some of the organic insulating film 26 applied and formed in the grooves 55a and 56b of the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25) may not be removed and may remain as residue 26R.

[0090] In this embodiment, in the grooves 55 formed at positions overlapping the outline cut lines L1, the width W4 of the grooves 55b formed in the organic insulating film 26 is larger than the width W3 of the grooves 55a in the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25). Also, in the grooves 56 formed at positions overlapping the outline cut lines L2, the width W6 of the grooves 56b formed in the organic insulating film 26 is larger than the width W5 of the grooves 56a in the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25). As a result, a step is formed between the organic insulating film 26 and the superimposed insulating film 25 in each of the grooves 55 and 56.

[0091] Next, a barrier film 27 is formed, and a photodiode PD is formed on the barrier film 27. An active layer 33 of the photodiode PD is formed by coating over the entire surface of the detection area AA and peripheral area GA, covering the barrier film 27 and the grooves 55 and 56. Thereafter, the active layer 33 in the peripheral area GA is removed by etching or the like. At this time, some of the active layer 33 in the grooves 55 and 56 may not be removed and may remain as residue 33R.

[0092] Thereafter, a sealing film 90 is formed to cover the photodiode PD. The sealing film 90 is patterned so that the outer edge of the organic sealing film 92 is located more inward (closer to the detection area AA) than the outer edge of the first inorganic sealing film 91 and the second inorganic sealing film 93.

[0093] Before the outer shape cutting, the detection device 100 is first cut by, for example, dicing along an outer shape cut line L1 in a region overlapping the bottom of the groove 55. Then, before the outer shape cutting, the detection device 100 is cut by, for example, laser processing along an outer shape cut line L2 in a region that is inside the outer shape cut line L1 and overlaps the bottom of the groove 56. In this way, the detection device 1 is formed.

[0094] Through the above-described steps, the configuration of the outer edge side of the substrate 21 in the detection device 1 is formed according to the shape of the groove 56 of the detection device 100 before the outer shape is cut. Specifically, as shown in Fig. 6, steps of the organic insulating film 26 and the superimposed insulating film 25 are formed on the outer edge side of the substrate 21. Furthermore, on the outer edge side of the substrate 21, residues 26R of the organic insulating film 26 and residues 33R of the active layer 33 may be provided on the side surface 25s of the superimposed insulating film 25.

[0095] 8 and 9 are merely examples and may be modified as appropriate. For example, groove 55 formed at a position overlapping with outline cut line L1 and groove 56 formed at a position overlapping with outline cut line L2 have the same shape, but are not limited to this. Widths W3 and W4 of groove 55 may be different from widths W5 and W6 of groove 56.

[0096] 7 and 9 illustrate a configuration in which both the residue 26R of the organic insulating film 26 and the residue 33R of the active layer 33 are provided, but this is not limiting. One of the residue 26R of the organic insulating film 26 and the residue 33R of the active layer 33 may be provided on the outer edge side of the substrate 21. That is, on the outer edge side of the substrate 21, the residue 26R of the organic insulating film 26 may be provided on the side surface 25s of the superimposed insulating film 25 (including the side surface 22s of the undercoat film 22 and the side surface 25s of the superimposed insulating film 25), and the residue 26R of the organic insulating film 26 may be covered with the first inorganic sealing film 91 and the second inorganic sealing film 93. Alternatively, the residue 26R of the organic insulating film 26 and the residue 33R of the active layer 33 may not be provided.

[0097] Although preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention naturally fall within the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made without departing from the gist of each of the above-described embodiments and modifications.

[0098] REFERENCE SIGNS LIST 1 Detector 10 Sensor section 21 Substrate 22 Undercoat film 23 Gate insulating film 24 Interlayer insulating film 25 Superposed insulating film 26 Organic insulating film 26G, 26G-1, 26G-2, 26G-3, 26G-4 Groove 27 Barrier film 31 Lower electrode 32 Lower buffer layer 33 Active layer 34 Upper buffer layer 35 Upper electrode 40 Detector 90 Sealing film 91 First inorganic sealing film 92 Organic sealing film 93 Second inorganic sealing film 100 Detector before cutting 101 Support substrate AA Detection area GA Peripheral area PD Photodiode

Claims

1. A detection device comprising: a substrate; an inorganic insulating film, an organic insulating film, and a barrier film stacked on the substrate; an organic photosensor stacked in the following order in a detection region of the substrate: a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode; and a first inorganic sealing film covering the organic photosensor, wherein the inorganic insulating film, the organic insulating film, the barrier film, the organic photosensor, and the first inorganic sealing film are stacked in this order in the detection region; the inorganic insulating film, the organic insulating film, the barrier film, and the first inorganic sealing film are stacked in this order in a peripheral region outside the detection region; and at the outer edge of the substrate, a side surface of the organic insulating film and a side surface of the inorganic insulating film are located closer to the detection region than the side surface of the substrate, and the side surfaces of the organic insulating film and the inorganic insulating film are covered with the first inorganic sealing film.

2. The detection device according to claim 1, wherein the barrier film is in contact with the inorganic insulating film on the outer edge side of the substrate.

3. The detection device according to claim 1, wherein a side of the organic insulating film is located closer to the detection region than a side of the inorganic insulating film, and the barrier film contacts an upper surface of the inorganic insulating film between the side of the organic insulating film and the side of the inorganic insulating film.

4. The detection device according to claim 3, wherein the width of the portion where the barrier film and the inorganic insulating film contact each other between the side surface of the organic insulating film and the side surface of the inorganic insulating film is 3 μm or more.

5. The detection device according to claim 1, wherein at least one of a residue of the organic insulating film and a residue of the organic light sensor is provided on a side surface of the inorganic insulating film, and at least one of the residue of the organic insulating film and the residue of the organic light sensor is covered with the first inorganic sealing film.

6. The detection device according to claim 1, wherein a residue of the organic insulating film is provided on a side surface of the inorganic insulating film, and the barrier film covers at least a portion of the residue of the organic insulating film.

7. The detection device according to claim 1, further comprising an organic sealing film and a second inorganic sealing film laminated on the first inorganic sealing film.

8. The detection device according to claim 1, further comprising a plurality of grooves formed on the upper surface of the organic insulating film in the peripheral region and extending along the outer edge of the substrate in a plan view.

9. The detection device according to claim 8, wherein each of the plurality of grooves has a width of 50 μm or more.

10. The detection device described in claim 8, further comprising an organic sealing film and a second inorganic sealing film stacked on the first inorganic sealing film, wherein of the plurality of grooves, the grooves on the detection region side are covered with the first inorganic sealing film, the organic sealing film and the second inorganic sealing film, and the other grooves on the outer edge side of the substrate are covered with the first inorganic sealing film and the second inorganic sealing film.

11. A detection device comprising: a substrate; an inorganic insulating film, an organic insulating film and a barrier film stacked on the substrate; an organic photosensor stacked in the following order in a detection region of the substrate: a lower electrode, a lower buffer layer, an active layer, an upper buffer layer and an upper electrode; and a first inorganic sealing film covering the organic photosensor, wherein the inorganic insulating film, the organic insulating film, the barrier film, the organic photosensor and the first inorganic sealing film are stacked in this order in the detection region; and wherein the inorganic insulating film, the organic insulating film, the barrier film and the first inorganic sealing film are stacked in this order in a peripheral region outside the detection region, and the peripheral region has a plurality of grooves formed on an upper surface of the organic insulating film and extending along an outer edge of the substrate in a planar view.

12. The detection device according to claim 11, wherein the inorganic insulating film and the barrier film are in direct contact with each other at the bottom of the groove.

13. The detection device according to claim 11, further comprising an organic sealing film and a second inorganic sealing film laminated on the first inorganic sealing film.

14. The detection device described in claim 13, wherein, of the plurality of grooves, the groove on the detection area side is covered with the first inorganic sealing film, the organic sealing film and the second inorganic sealing film, and the other grooves on the outer edge side of the substrate are covered with the first inorganic sealing film and the second inorganic sealing film.

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