Method for manufacturing photoelectric composite wiring board, photoelectric composite wiring board, semiconductor package, and laminated film

Abstract

A method for manufacturing a photoelectric composite wiring board according to the present invention has: a step for forming an insulating layer having a plurality of layers of different materials on a substrate having a first wiring layer; a step for exposing at least one of the insulating layers to form an optical waveguide; a step for forming via holes in the insulating layer; and a step for forming a second wiring layer on the insulating layer and forming via conductors in the via holes to connect the first wiring layer and the second wiring layer.

Description

Photoelectric composite wiring board manufacturing method, photoelectric composite wiring board, semiconductor package, and laminated film

[0001] The present disclosure relates to a method for manufacturing an optoelectronic composite wiring board, an optoelectronic composite wiring board, a semiconductor package, and a laminate film.

[0002] In recent years, the concept of co-packaged optics, which combines an optical circuit chip and an electronic circuit chip for controlling it into a single package, has been gaining popularity for applications in high-speed optical communications, HPC (High Performance Computing), etc. This makes it possible to achieve higher speeds, larger capacities, lower power consumption, and smaller sizes.

[0003] Typically, optical circuit chips and electronic circuit chips are packaged separately and mounted on a substrate. However, from the perspectives of productivity, high-speed transmission, power saving, and miniaturization, optical circuit chips and electronic circuit chips are placed on a redistribution layer, which is a silicon interposer, packaged together, and then mounted on a substrate (see "FOWLP and Si-Interposer for High-Speed ​​Photonic Packaging," Lim Teck Guan, Eva Wai Leong Ching, Jong Ming Ching, Loh Woon Leng, David Ho Soon Wee, and Surya Bhattacharya (2021 IEEE 71st Electronic Components and Technology Conference (ECTC))).

[0004] An object of the present disclosure is to provide a technology that can reduce the cost of a semiconductor package in which an optical circuit chip and an electronic circuit chip are mounted.

[0005] <1> A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: forming an insulating layer having multiple layers made of different materials on a substrate having a first wiring layer; exposing at least one of the insulating layers to light to form an optical waveguide; forming a via hole in the insulating layer; and forming a second wiring layer on the insulating layer and forming a via conductor in the via hole connecting the first wiring layer to the second wiring layer. <2> A method for manufacturing an optoelectronic composite wiring board according to <1>, wherein, of the multiple layers, a layer forming the optical waveguide contains a material whose refractive index is modulated by light exposure. <3> A method for manufacturing an optoelectronic composite wiring board according to <2>, wherein the layer forming the optical waveguide contains a material whose refractive index is increased by exposure to light with a wavelength of 10 nm to 450 nm. <4> A method for manufacturing an optoelectronic composite wiring board according to <2>, wherein the layer forming the optical waveguide contains a material whose refractive index is decreased by exposure to light with a wavelength of 10 nm to 450 nm. <5> A method for manufacturing an optoelectronic composite wiring board according to any one of <1> to <4>, wherein at least one of the insulating layers contains a thermosetting resin. <6> The method for manufacturing an optoelectronic composite wiring board according to any one of <1> to <5>, wherein the plurality of layers in the insulating layer are formed by laminating one layer at a time on the substrate. <7> The method for manufacturing an optoelectronic composite wiring board according to any one of <1> to <6>, wherein at least one layer of the insulating layer is formed from a liquid resin material. <8> The method for manufacturing an optoelectronic composite wiring board according to any one of <1> to <7>, wherein at least one layer of the insulating layer is formed from a film-like resin material. <9> The method for manufacturing an optoelectronic composite wiring board according to any one of <1> to <8>, wherein the insulating layer is formed by mounting a laminate formed by laminating the plurality of layers on the substrate. <10> The method for manufacturing an optoelectronic composite wiring board according to <9>, wherein the laminate is formed by laminating the layers formed from a film-like resin material. <11> The method for manufacturing an optoelectronic composite wiring board according to <1>, wherein the insulating layer is formed by laminating three layers, and the layer forming the optical waveguide is located between the three layers.

[0006] <12> A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: forming a first insulating layer on a substrate having a first wiring layer; forming a first via hole in the first insulating layer; forming a second wiring layer on the first insulating layer and forming a first via conductor connecting the first wiring layer and the second wiring layer in the first via hole; forming a second insulating layer on the second wiring layer, the second insulating layer being made of a different material from the first insulating layer; exposing the second insulating layer to light to form an optical waveguide; forming a second via hole in the second insulating layer; and forming a third wiring layer on the second insulating layer and forming a second via conductor connecting the second wiring layer and the third wiring layer in the second via hole. <13> A method for manufacturing an optoelectronic composite wiring board according to <12>, wherein the second insulating layer contains a substance whose refractive index is modulated by exposure to light. <14> A method for manufacturing an optoelectronic composite wiring board according to <13>, wherein the second insulating layer contains a substance whose refractive index is increased by exposure to light with a wavelength of 10 nm to 450 nm. <15> The method for manufacturing an optoelectronic composite wiring board according to <13>, wherein the second insulating layer contains a substance whose refractive index decreases upon exposure to light with a wavelength of 10 nm to 450 nm. <16> The method for manufacturing an optoelectronic composite wiring board according to any one of <12> to <15>, wherein the first insulating layer and the second insulating layer contain a thermosetting resin. <17> The method for manufacturing an optoelectronic composite wiring board according to any one of <12> to <16>, wherein at least one of the first insulating layer and the second insulating layer is formed from a liquid resin material. <18> The method for manufacturing an optoelectronic composite wiring board according to any one of <12> to <17>, wherein at least one of the first insulating layer and the second insulating layer is formed from a film-like resin material. <19> The method for manufacturing an optoelectronic composite wiring board according to any one of <12> to <18>, wherein the first via conductor and the second via conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.<20> The method for manufacturing an optoelectronic composite wiring board according to <19>, comprising the steps of: forming a third insulating layer on the third wiring layer, the third insulating layer being made of a material different from that of the second insulating layer; forming a third via hole in the third insulating layer; and forming a fourth wiring layer on the third insulating layer, and forming a third via conductor connecting the third wiring layer and the fourth wiring layer in the third via hole, wherein the second via conductor and the third via conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.

[0007] <21> A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: laminating a plurality of layers made of different materials on a substrate having a first wiring layer, and exposing and developing one of the plurality of layers to form an optical waveguide; forming a via hole in an insulating layer formed by laminating the plurality of layers; and forming a second wiring layer on the insulating layer and forming a via conductor in the via hole to connect the first wiring layer to the second wiring layer. <22> A method for manufacturing an optoelectronic composite wiring board according to <21>, wherein the layer forming the optical waveguide contains a photosensitive material and a thermosetting resin. <23> A method for manufacturing an optoelectronic composite wiring board according to <21>, wherein the layer forming the optical waveguide contains a negative or positive photosensitive material and a thermosetting resin. <24> A method for manufacturing an optoelectronic composite wiring board according to <21>, wherein the insulating layer is formed by laminating three layers, and the layer forming the optical waveguide is located intermediate the three layers. <25> The method for manufacturing an optoelectronic composite wiring board according to <21>, comprising stacking a plurality of layers made of different materials on the substrate, exposing and developing the uppermost layer to form an optical waveguide, and stacking another layer made of the different material on the optical waveguide to form the insulating layer. <26> The method for manufacturing an optoelectronic composite wiring board according to any one of <21> to <24>, wherein the plurality of layers in the insulating layer are formed by stacking one layer at a time on the substrate. <27> The method for manufacturing an optoelectronic composite wiring board according to any one of <21> to <26>, wherein at least one layer of the plurality of layers made of different materials is formed from a liquid resin material. <28> The method for manufacturing an optoelectronic composite wiring board according to <21> to <26>, wherein at least one layer of the plurality of layers made of different materials is formed from a film-like resin material.

[0008] <29> A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: forming a first insulating layer on a substrate having a first wiring layer, forming a first via hole in the first insulating layer, forming a second wiring layer on the first insulating layer and forming a first via conductor in the first via hole connecting the first wiring layer to the second wiring layer, forming a second insulating layer on the second wiring layer, the second insulating layer being made of a different material from the first insulating layer, exposing and developing the second insulating layer to form an optical waveguide, forming a third insulating layer on the second insulating layer, the third insulating layer being made of a different material from the second insulating layer, forming a second via hole in the third insulating layer, and forming a third wiring layer on the third insulating layer and forming a second via conductor in the second via hole connecting the second wiring layer to the third wiring layer. <30> A method for manufacturing an optoelectronic composite wiring board according to <29>, wherein the second insulating layer contains a photosensitive material and a thermosetting resin. <31> The method for manufacturing an optoelectronic composite wiring board according to <29>, wherein the second insulating layer contains a negative or positive photosensitive material and a thermosetting resin. <32> The method for manufacturing an optoelectronic composite wiring board according to any one of <29> to <31>, wherein the first via conductor and the second via conductor overlap in the stacking direction of the first insulating layer and the second insulating layer. <33> The method for manufacturing an optoelectronic composite wiring board according to any one of <29> to <32>, wherein at least one of the first insulating layer and the second insulating layer is formed from a liquid resin material. <34> The method for manufacturing an optoelectronic composite wiring board according to any one of <29> to <32>, wherein at least one of the first insulating layer and the second insulating layer is formed from a film-like resin material.

[0009] <35> A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: forming a first clad layer on the first surface, the second surface, and inner wall surfaces of the through hole of a substrate having a first surface, a second surface opposite the first surface, through holes opening in the first surface and the second surface, respectively, and a first wiring layer formed on the first surface; forming core layers on the first clad layer on the first surface and the second surface, and forming the core layer between the first clad layers on the inner wall surfaces; forming second clad layers on the core layers on the first surface and the second surface, respectively; exposing the core layers to light to form optical waveguides; forming via holes in a first insulating layer constituted by the first clad layer, the second clad layer, and the core layer on the first surface; and forming a second wiring layer on the first insulating layer, and forming via conductors in the via holes to electrically connect the first wiring layer and the second wiring layer. <36> The method for manufacturing an optoelectronic composite wiring board according to <35>, wherein at least one of the first cladding layer, the core layer, and the second cladding layer is formed from a liquid resin material. <37> The method for manufacturing an optoelectronic composite wiring board according to <35>, wherein at least one of the first cladding layer, the core layer, and the second cladding layer is formed from a film-like resin material. <38> The method for manufacturing an optoelectronic composite wiring board according to any one of <35> to <37>, wherein the core layer contains a substance whose refractive index is modulated by exposure to light.<39> A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: forming a first clad layer on the first surface, the second surface, and inner wall surfaces of the through hole of a substrate having a first surface, a second surface opposite the first surface, through holes opening in the first surface and the second surface, respectively, and a first wiring layer formed on the first surface; forming core layers on the first clad layer on the first surface and the second surface, and forming the core layers between the first clad layers on the inner wall surfaces; exposing and developing the core layer to form an optical waveguide; forming second clad layers on the first clad layer on the first surface and the second surface, respectively, so as to cover the core layers; forming via holes in a first insulating layer constituted by the first clad layer, the second clad layer, and the core layer on the first surface; and forming a second wiring layer on the first insulating layer, and forming via conductors in the via holes to electrically connect the first wiring layer and the second wiring layer. <40> The method for manufacturing an optoelectronic composite wiring board according to <39>, wherein at least one of the first cladding layer, the core layer, and the second cladding layer is formed from a liquid resin material. <41> The method for manufacturing an optoelectronic composite wiring board according to <39>, wherein at least one of the first cladding layer, the core layer, and the second cladding layer is formed from a film-like resin material. <42> The method for manufacturing an optoelectronic composite wiring board according to any one of <39> to <41>, wherein the core layer contains a negative or positive photosensitive material and a thermosetting resin.

[0010] <43> An optoelectronic composite wiring board formed by the method for manufacturing an optoelectronic composite wiring board according to any one of <1> to <11>. <44> An optoelectronic composite wiring board comprising: a substrate having a first wiring layer, an insulating layer formed on the substrate and having a plurality of layers made of different materials and a via hole, an optical waveguide formed in the insulating layer, a second wiring layer formed on the insulating layer, and a via conductor formed in the via hole and connecting the first wiring layer and the second wiring layer.

[0011] <45> An optoelectronic composite wiring board formed using the method for manufacturing an optoelectronic composite wiring board according to any one of <12> to <20>. <46> An optoelectronic composite wiring board comprising: a substrate having a first wiring layer; a first insulating layer formed on the substrate and having a first via hole; a second wiring layer formed on the first insulating layer; a first via conductor formed in the first via hole and connecting the first wiring layer to the second wiring layer; a second insulating layer formed on the second wiring layer and having a second via hole; an optical waveguide formed in the second insulating layer; a third wiring layer formed on the second insulating layer; and a second via conductor formed in the second via hole and connecting the second wiring layer to the third wiring layer. <47> The optoelectronic composite wiring board according to <46>, wherein the first via conductor and the second via conductor overlap in the stacking direction of the first insulating layer and the second insulating layer. <48> The photoelectric composite wiring board according to <46>, comprising: a third insulating layer formed on the third wiring layer and having a third via hole; a fourth wiring layer formed on the third insulating layer; and a third via conductor formed in the third via hole and connecting the third wiring layer and the fourth wiring layer, wherein the second via conductor and the third via conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.

[0012] <49> An optoelectronic composite wiring board formed by the method for producing an optoelectronic composite wiring board according to any one of <21> to <28>.

[0013] <50> An optoelectronic composite wiring board formed by the method for producing an optoelectronic composite wiring board according to any one of <29> to <34>.

[0014] <51> An optoelectronic composite wiring board comprising: a substrate having a first surface, a second surface opposite to the first surface, through holes opening in the first surface and the second surface, and a first wiring layer formed on the first surface; a first insulating layer formed on the first surface of the substrate and having a via hole; a second wiring layer formed on the first insulating layer; a via conductor electrically connecting the first wiring layer and the second wiring layer; a first optical waveguide formed in the first insulating layer; a second insulating layer formed on the second surface of the substrate; a second optical waveguide formed in the second insulating layer; and a third optical waveguide formed in the through hole and optically connecting the first optical waveguide and the second optical waveguide.

[0015] <52> A semiconductor package comprising: the optoelectronic composite wiring board according to <43> or <44>; an optical circuit chip connected to the optical waveguide of the optoelectronic composite wiring board; and an electronic circuit chip disposed on the second wiring layer of the optoelectronic composite wiring board.

[0016] <53> A semiconductor package comprising: the optoelectronic composite wiring board according to <48>; an optical circuit chip connected to the optical waveguide of the optoelectronic composite wiring board; and an electronic circuit chip disposed on a fourth wiring layer of the optoelectronic composite wiring board.

[0017] <54> A semiconductor package comprising: the optoelectronic composite wiring board according to <49>; an optical circuit chip connected to the optical waveguide of the optoelectronic composite wiring board; and an electronic circuit chip disposed on the second wiring layer of the optoelectronic composite wiring board.

[0018] <55> A semiconductor package comprising: the optoelectronic composite wiring board according to <50>; an optical circuit chip connected to the optical waveguide of the optoelectronic composite wiring board; and an electronic circuit chip disposed on the third wiring layer of the optoelectronic composite wiring board.

[0019] <56> A semiconductor package comprising: the optoelectronic composite wiring board according to <51>; an optical circuit chip optically connected to the first optical waveguide of the optoelectronic composite wiring board; and an electronic circuit chip electrically connected to the second wiring layer of the optoelectronic composite wiring board.

[0020] <57> A laminate film comprising: a laminate including a first resin layer containing a substance whose refractive index is modulated by light irradiation; and second resin layers formed on both sides of the first resin layer and having a refractive index different from that of the first resin layer; and protective films provided on both sides of the laminate to protect both sides. <58> The laminate film according to <57>, wherein the first resin layer contains a thermosetting resin. <59> The laminate film according to <58>, wherein the substance contained in the first resin layer is a substance whose refractive index increases by light irradiation. <60> The laminate film according to <58>, wherein the substance contained in the first resin layer is a substance whose refractive index decreases by light irradiation. <61> The laminate film according to any one of <57> to <60>, wherein the second resin layer contains a thermosetting resin.

[0021] According to the technology of the present disclosure, it is possible to reduce the cost of semiconductor packages in which optical circuit chips and electronic circuit chips are mounted.

[0022] FIG. 1A is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure. FIG. 1B is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure. FIG. 2 is a schematic plan view of the semiconductor package shown in FIG. 1A. FIG. 3 is a schematic plan view of a modified example of the semiconductor package shown in FIG. 1A. FIG. 4 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 5 is a schematic plan view of the semiconductor package shown in FIG. 4. FIG. 6 is a schematic plan view of a modified example of the semiconductor package shown in FIG. 4. FIG. 7 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 8 is a schematic plan view of the semiconductor package shown in FIG. 7. FIG. 9 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 11 is a schematic plan view of the semiconductor package shown in FIG. 10. FIG. 12 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 13 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. 14 is a perspective view showing an optical input portion of an optical circuit chip used in the semiconductor package shown in FIG. 1 . FIG. 15 is a perspective view showing a modified example of the optical input portion of an optical circuit chip used in the semiconductor package shown in FIG. 1 . FIG. 16A is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16B is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16C is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16D is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16E is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16F is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16G is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16H is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16I is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 17 is a front view illustrating materials used in the method for manufacturing an optoelectronic composite wiring board.FIG. 18 is a cross-sectional view illustrating a laminate film used in a method for manufacturing an optoelectronic composite wiring board. FIG. 19 is a cross-sectional view illustrating a laminate film used in a method for manufacturing an optoelectronic composite wiring board. FIG. 20 is a cross-sectional view illustrating a laminate film used in a method for manufacturing an optoelectronic composite wiring board. FIG. 21A is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21B is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21C is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21D is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21E is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21F is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21G is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21H is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21I is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21J is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 21K is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22A is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22B is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22C is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22D is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22E is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22F is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 22G is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 23A is a cross-sectional view illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 23B is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.Fig. 23C is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Fig. 23D is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Fig. 23E is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Fig. 23F is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Fig. 23G is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Fig. 23H is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Fig. 23I is a cross-sectional view illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0023] Hereinafter, embodiments for carrying out the present disclosure will be described in detail. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including element steps, etc.) are not essential unless otherwise specified. The same applies to numerical values ​​and their ranges, and do not limit the present disclosure.

[0024] In the present disclosure, the term "process" includes not only a process that is independent of other processes, but also a process that cannot be clearly distinguished from other processes as long as the purpose of the process is achieved.

[0025] In the present disclosure, numerical ranges indicated using "to" include the numerical values ​​before and after "to" as the minimum and maximum values, respectively.

[0026] In the numerical ranges described in stages in this disclosure, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this disclosure, the upper or lower limit value of that numerical range may be replaced with a value shown in the examples.

[0027] In the present disclosure, each component may contain multiple substances corresponding to the component. When multiple substances corresponding to each component are present in the composition, the content or amount of each component means the total content or amount of the multiple substances present in the composition, unless otherwise specified.

[0028] In the present disclosure, the term "layer" includes cases where the layer is formed over the entire area when the area in which the layer exists is observed, as well as cases where the layer is formed over only a portion of the area.

[0029] When describing embodiments with reference to the drawings in this disclosure, the configuration of the embodiment is not limited to the configuration shown in the drawings. Furthermore, the sizes of components in each drawing are conceptual, and the relative size relationships between components are not limited to these.

[0030] 1A is a schematic cross-sectional view showing an embodiment of a semiconductor package according to the present disclosure. The semiconductor package 20 according to the present disclosure includes an optoelectronic composite wiring board 30, an optical circuit chip 50, and an electronic circuit chip 60.

[0031] 1A and 1B, the optoelectronic composite wiring board 30 includes a resin layer, optical wiring, and electrical wiring. Specifically, the optoelectronic composite wiring board 30 includes a substrate 32, an insulating layer 34, an optical waveguide 36 as the optical wiring, a wiring layer 38 as the electrical wiring, and via conductors 78 (see FIG. 1B).

[0032] The substrate 32 has a wiring layer 33 (see FIG. 1B ) as electrical wiring. In the present embodiment, as an example, the wiring layer 33 is provided on the surface of the substrate 32. The substrate 32 may be an inorganic substrate such as glass or ceramic, an organic substrate such as a copper-clad laminate, or a composite substrate obtained by laminating a prepreg, a build-up film, or a rewiring resin material onto any of these.

[0033] The insulating layer 34 is made of a resin material and is disposed on the substrate 32. Specifically, as shown in FIG. 1B , the insulating layer 34 is disposed on the substrate 32 and the wiring layer 33. In this embodiment, the insulating layer 34 is configured, for example, with three layers. The insulating layer 34 is mainly configured with a first layer 70 disposed on the substrate 32, a second layer 72 disposed on the first layer 70, and a third layer 74 disposed on the second layer 72. Note that the number of layers constituting the insulating layer 34 is not limited to the above.

[0034] The optical waveguide 36 is a path for guiding an optical signal, and is provided inside the insulating layer 34, as shown in FIGS. 1A and 1B. In this embodiment, the optical waveguide 36 is, for example, formed by a part of the second layer 72. An optical guide section 42 is provided at the end of the optical waveguide 36. The optical guide section 42 has a guide body 42A and a reflecting mirror 42B. Light emitted from the end of the optical waveguide 36 is reflected by the reflecting mirror 42B and travels through the guide body 42A to the optical circuit chip 50. The optical guide section 42 is provided in the insulating layer 34.

[0035] The wiring layer 38 is provided inside the insulating layer 34 or on the surface of the insulating layer 34. The wiring layer 38 of this embodiment is provided on the surface of the insulating layer 34, as shown in FIG. 1B . When there are multiple wiring layers 38, the wiring layers 38 may be provided inside the insulating layer 34 and on the surface of the insulating layer 34, respectively. Each wiring layer may contain one or more types of metal. Examples of metals that constitute each wiring layer include copper, silver, gold, and aluminum. The metals that constitute each wiring layer are not limited to the above metals.

[0036] The via conductor 40 electrically connects the wiring layer 33 and the wiring layer 38. When there are multiple wiring layers 38, adjacent wiring layers 38 in the stacking direction may be electrically connected by another via conductor. The metal constituting the via conductor may be the same as the metal constituting the wiring layer 38.

[0037] (Optical Circuit Chip 50) The optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30. The optical circuit chip 50 is connected to the optical waveguide 36. Specifically, the optical circuit chip 50 is connected to the optical waveguide 36 via the optical guide 42. The optical circuit chip 50 has a light introduction port 52 (see FIG. 14 ) on the insulating layer 34 side, and the light guide 42 is connected to the light introduction port 52. A plurality of light introduction ports 52 are provided at intervals on the optical circuit chip 50. The light introduction port 52 may have any shape as long as it can introduce light, and may be a circular opening as shown in FIG. 14 or a tapered opening as shown in FIG. 15 .

[0038] The optical circuit chip 50 is connected to a wiring layer for the optical circuit chip 50 in the insulating layer 34 via chip electrodes 54 .

[0039] (Electronic Circuit Chip 60) The electronic circuit chip 60 is disposed on the wiring layer 38. Note that the wiring layer 38 is not shown in Fig. 1A. The electronic circuit chip 60 is connected to the wiring layer 38 via chip electrodes 62.

[0040] 2 is a schematic plan view of the semiconductor package shown in FIG. 1A. In the example of FIG. 2, an electronic circuit chip 60 is disposed in the center of an optoelectronic composite wiring board 30, and a plurality of optical circuit chips 50 are disposed surrounding the electronic circuit chip 60. A plurality of optical waveguides 36 extending from optical connectors 44 provided on the periphery of the optoelectronic composite wiring board 30 are connected to these optical circuit chips 50. Note that, in the example of FIG. 2, an optical connector 44 is provided on each of the four sides of the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration. For example, as shown in the example of FIG. 6, a pair of optical connectors 44 may be provided on each of two opposite sides of the optoelectronic composite wiring board 30.

[0041] In the semiconductor package 20, the optical circuit chip 50 and the electronic circuit chip 60 are arranged on the optoelectronic composite wiring board 30 without using a silicon interposer as a relay material. Therefore, the cost of the semiconductor package 20 is reduced compared to a configuration that uses a silicon interposer.

[0042] In the semiconductor package 20 described above, the optical waveguide 36 and the optical circuit chip 50 are connected via the light guide portion 42 as shown in Fig. 1A, but the present disclosure is not limited to this configuration. As in the semiconductor package 21 shown in Fig. 4, the light introduction port 52 may be connected directly to the portion that constitutes the optical waveguide 36. Note that the semiconductor package 21 may have an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 arranged therein as in the example shown in Fig. 5, or may have an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 arranged therein as in the example shown in Fig. 6.

[0043] Furthermore, in the semiconductor package 20 described above, the optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30 as shown in FIG. 1A , but the present disclosure is not limited to this configuration. As in the semiconductor package 22 shown in FIG. 7 , the optical circuit chip 50 may be embedded in the insulating layer 34 that constitutes the optoelectronic composite wiring board 30. A reflective mirror 42B may be disposed at the end of the optical waveguide 36 to reflect light toward the light introduction port 52 of the embedded optical circuit chip 50. The semiconductor package 22 may also be configured to include an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44, as in the example shown in FIG. 8 . Furthermore, as in the semiconductor package 23 shown in FIG. 9 , the optical waveguide 36 may be directly connected to the portion that constitutes the light introduction port 52.

[0044] Furthermore, in the semiconductor package 22 described above, the optical circuit chip 50 is embedded in the insulating layer 34 that constitutes the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration. As in the semiconductor package 24 shown in FIG. 10 , the optical circuit chip 50 may be embedded in the substrate 32 that constitutes the optoelectronic composite wiring board 30. A reflective mirror 42B may be disposed at the end of the optical waveguide 36 to reflect light toward the light introduction port 52 of the embedded optical circuit chip 50. The semiconductor package 24 may also be configured with an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44, as in the example shown in FIG. 11 . Furthermore, as in the semiconductor package 25 shown in FIG. 12 , the optical waveguide 36 may be directly connected to the portion that constitutes the light introduction port 52.

[0045] Furthermore, in the semiconductor package 22 described above, the optical circuit chip 50 and the electronic circuit chip 60 are disposed on the insulating layer 34 of the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration. As in the semiconductor package 26 shown in Fig. 13 , the optical circuit chip 50 and the electronic circuit chip 60 may be disposed on the surface of the substrate 32 opposite the insulating layer 34. In this case, a through hole 32A is formed in the substrate 32, an optical waveguide 36 is passed through this through hole 32A, and the optical circuit chip 50 is disposed so that the light introduction port 52 is located at the end of the optical waveguide 36. This connects the optical waveguide 36 to the optical circuit chip 50.

[0046] Next, a description will be given of a method for manufacturing optoelectronic composite wiring board 30. Figures 16A to 16I are schematic cross-sectional views for explaining one embodiment of a method for manufacturing optoelectronic composite wiring board 30.

[0047] As shown in FIG. 16A , an insulating layer 34 having multiple layers made of different materials is formed on a substrate 32 having a wiring layer 33. In this embodiment, a first layer 70 (cladding layer) is disposed on the substrate 32, a second layer 72 (core layer) is disposed on the first layer 70, and a third layer 74 (cladding layer) is disposed on the second layer 72. The second layer 72 contains a substance whose refractive index is modulated by exposure. Specifically, the second layer 72 is a photosensitive layer containing a substance whose refractive index increases by exposure to light with a wavelength of 10 nm to 450 nm, including ultraviolet light. At least one layer constituting the insulating layer 34 may contain a thermosetting resin. In this embodiment, each layer constituting the insulating layer 34 (the first layer 70, the second layer 72, and the third layer 74) contains a thermosetting resin.

[0048] The photosensitive resin composition constituting the second layer 72 is not particularly limited, and conventionally known materials, such as materials that undergo photodimerization or elimination reactions upon light irradiation, may be used. Specific examples of materials that undergo photodimerization include nitrone derivatives, norbornadiene derivatives, polyvinyl cinnamate, and maleimide compounds, which contain functional groups that undergo photodimerization, such as C═C (unsaturated double bonds), maleimide groups, indene groups, cinnamate groups, stilbene groups, and cinnamoyl groups. Specific examples of materials that undergo elimination reactions upon light irradiation include α-diazoketone compounds and azide compounds containing azide groups, which are functional groups that eliminate nitrogen upon light irradiation. By including at least one of these, the refractive index can be modulated by exposure. Therefore, as long as the material contains at least one of these, alkali-soluble resins with phenolic hydroxyl groups, acrylic resins, epoxy resins, polyimide resins, polyamideimide resins, polybenzoxazole resins, and the like may be appropriately selected and used.

[0049] The insulating layer 34 may be formed by stacking each of the layers constituting the insulating layer 34 one by one on the substrate 32. For example, as shown in Fig. 17, the first layer 70 and the third layer 74 may be formed using a liquid resin material L1 (varnish), and the second layer 72 may be formed using a liquid resin material L2 (varnish). In this case, the insulating layer 34 is formed by applying the liquid resin material L1 onto the substrate 32, curing the resin material L1, applying the resin material L2 onto the resin material L1, and curing the resin material L2, and then applying the resin material L1 onto the resin material L2.

[0050] On the other hand, as shown in FIG. 18 , the first layer 70 and the third layer 74 may be formed using a film-like resin material F1, and the second layer 72 may be formed using a film-like resin material F2. In this case, the insulating layer 34 is formed by disposing the film-like resin material F1 on the substrate 32, then disposing the resin material F2 on the resin material F1, and then disposing the resin material F1 on the resin material F2. Note that a film-like protective material P may be provided on each of both sides of the resin material F1. Also, a protective material P may be provided on each of both sides of the resin material F2. Furthermore, when a protective material P is provided on each of both sides of the film-like resin material, the materials of the protective materials P may be different. Specifically, one protective material P may be used to support the film-like resin material, and the other protective material P may be used to protect the surface of the film-like resin material. Note that the film-like resin material may be formed by applying a liquid resin material onto the protective material P, or another protective material P may be placed on the applied resin material.

[0051] 19, a laminated film SF1 may be used in which film-like resin materials F1 and F2 are laminated to form the second layer 72 and the third layer 74. In this case, the amount of protective material P can be reduced, which facilitates cost reduction. Furthermore, manufacturing efficiency is improved compared to when layers are laminated one by one on the substrate 32.

[0052] 20, a laminated film SF2 may be used in which film-like resin materials F1, F2, and F1 are laminated to form the first layer 70, the second layer 72, and the third layer 74. In this case, the amount of protective material P can be further reduced, which facilitates cost reduction. In addition, manufacturing efficiency is improved compared to when layers are laminated one by one on the substrate 32.

[0053] Next, as shown in FIG. 16B, a mask material M1 is placed on the insulating layer 34. Then, the insulating layer 34 is exposed to light. As a result of the exposure, the second layer 72 that constitutes the insulating layer 34 is exposed, as shown in FIG. 16C, and the optical waveguide 36 is formed. Note that the portion of the second layer 72 that is not exposed by the mask material M1 becomes the optical waveguide 36. After the exposure of the insulating layer 34 is complete, the mask material M1 is removed from above the insulating layer 34.

[0054] 16D, a via hole 76 is formed in the insulating layer 34. This via hole 76 is a through hole that continuously penetrates the first layer 70, the second layer 72, and the third layer 74. The via hole 76 may be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0055] Next, a wiring layer 38 is formed on the insulating layer 34, and a via conductor 78 connecting the wiring layer 33 and the wiring layer 38 is formed in the via hole 76. To form the via conductor 78, first, as shown in FIG. 16E, a seed layer 78A is placed on the insulating layer 34, i.e., on the third layer 74 (the surface of the third layer 74) and on the inner surface of the via hole 76. Next, as shown in FIG. 16F, a resist material R1 is placed on the seed layer 78A. Then, as shown in FIG. 16G, an electroplated layer 78B is placed on the seed layer 78A. Thereafter, as shown in FIG. 16H, the resist material R1 is removed from the seed layer 78A. Then, the portion of the seed layer 78A not covered by the electroplated layer 78B is removed. This forms the via conductor 78 and the wiring layer 38. Note that the portion inside the via hole constitutes the via conductor 78, and the portion on the third layer 74 constitutes the wiring layer 33.

[0056] In this manner, an optoelectronic composite wiring board 30 having optical wiring and electrical wiring is manufactured.

[0057] In the above manufacturing method, the second layer 72 is a photosensitive layer containing a substance whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays, but the present disclosure is not limited to this configuration. For example, the second layer 72 may be a photosensitive layer containing a substance whose refractive index decreases when exposed to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays.

[0058] Next, a method for manufacturing an optoelectronic composite wiring board 130, which is a modified example of the optoelectronic composite wiring board 30, will be described.

[0059] 21A to 21K are cross-sectional schematic views illustrating one embodiment of a method for manufacturing optoelectronic composite wiring board 130. As shown in FIG. 21K, optoelectronic composite wiring board 130 has first layer 170 (clad layer) disposed on substrate 32 having wiring layer 33, second layer 172 (core layer) disposed on first layer 170, and third layer 174 (clad layer) disposed on second layer 172. First layer 170, second layer 172, and third layer 174 form an insulating layer on substrate 32. Second layer 172 is made of the same resin material as second layer 72.

[0060] 21A, a first layer 170 is formed on a substrate 32 having a wiring layer 33. The first layer 170 may be formed using a liquid resin material L1 or a film-like resin material F1.

[0061] 21B, via holes 176 are formed in the first layer 170. These via holes 176 are through-holes that penetrate the first layer 170. The via holes 176 may be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0062] 21C , a wiring layer 190 is formed on the first layer 170, and a via conductor 180 is formed in the via hole 76 to connect the wiring layer 33 and the wiring layer 190. The method for forming the wiring layer 190 and the via conductor 180 is similar to the method for forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted. The portion inside the via hole 76 constitutes the via conductor 180, and the portion on the first layer 170 constitutes the wiring layer 190.

[0063] 21D, a second layer 172 is formed on the first layer 170 and the wiring layer 190. The second layer 172 may be formed using a liquid resin material L2 or a film-like resin material F2.

[0064] Next, as shown in Fig. 21E, a mask material M1 is placed on the second layer 172. Then, the second layer 172 is exposed to light. By the exposure, the second layer 172 is exposed as shown in Fig. 21F, and the optical waveguide 136 is formed. Note that the portion of the second layer 172 that is not exposed by the mask material M1 becomes the optical waveguide 136. After the exposure of the second layer 172 is completed, the mask material M1 is removed from above the second layer 172.

[0065] 21G, via holes 177 are formed in the second layer 172. These via holes 177 are through holes that penetrate the second layer 172. Note that the via holes 177 may be formed by, for example, a drill or by laser irradiation.

[0066] 21H , a wiring layer 192 is formed on the second layer 172, and a via conductor 182 is formed in the via hole 177 to connect the wiring layer 190 and the wiring layer 192. The method for forming the wiring layer 192 and the via conductor 182 is similar to the method for forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted. The portion inside the via hole 177 constitutes the via conductor 182, and the portion on the second layer 172 constitutes the wiring layer 192.

[0067] 21I, a third layer 174 is formed on the second layer 172 and the wiring layer 192. The third layer 174 may be formed using a liquid resin material L1 or a film-like resin material F1.

[0068] 21J, via holes 178 are formed in the third layer 174. These via holes 178 are through-holes that penetrate the third layer 174. The via holes 178 may be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0069] 21K, a wiring layer 194 is formed on the third layer 174, and a via conductor 184 is formed in the via hole 178 to connect the wiring layer 192 and the wiring layer 194. The method for forming the wiring layer 194 and the via conductor 184 is similar to the method for forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted. The portion inside the via hole 178 constitutes the via conductor 184, and the portion on the third layer 174 constitutes the wiring layer 194.

[0070] In this manner, an optoelectronic composite wiring board 130 having optical wiring and electrical wiring is manufactured.

[0071] In the above manufacturing method, the second layer 172 is a photosensitive layer containing a substance whose refractive index increases when exposed to light with a wavelength of 10 nm to 450 nm, including ultraviolet rays, but the present disclosure is not limited to this configuration. For example, the second layer 172 may be a photosensitive layer containing a substance whose refractive index decreases when exposed to light with a wavelength of 10 nm to 450 nm, including ultraviolet rays.

[0072] Furthermore, in photoelectric composite wiring board 130, via conductors 180, 182, and 184 overlap each other in the stacking direction, but the present disclosure is not limited to this configuration. They may not overlap or may partially overlap.

[0073] Next, a method for manufacturing a photoelectric composite wiring board 230, which is a modified example of the photoelectric composite wiring board 30, will be described.

[0074] 22A to 22G are cross-sectional schematic views illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board 230. As shown in Fig. 22G, optoelectronic composite wiring board 230 includes a first layer 270 (cladding layer) disposed on substrate 32 having wiring layer 33, a resin layer 274 (cladding layer) disposed on first layer 270, and an optical waveguide 236 disposed within resin layer 274 on first layer 270. First layer 270, resin layer 274, and optical waveguide 236 form an insulating layer on substrate 32. Second layer 272 includes a negative or positive photosensitive material and a thermosetting resin.

[0075] The photosensitive resin composition constituting the second layer 272 is not particularly limited, and may be appropriately selected from conventionally known materials, specifically, alkali-soluble resins having phenolic hydroxyl groups, carboxyl groups, etc., acrylic resins, epoxy resins, polyimide resins, polyamideimide resins, polybenzoxazole resins, etc. The photosensitive resin composition may be either positive or negative. A negative development can be achieved by combining a monomer or polymer containing a photopolymerizable functional group with a photopolymerization initiator. A positive development can also be achieved by combining a dissolution inhibitor that becomes alkali-soluble upon exposure to light.

[0076] 22A, a first layer 270 is formed on a substrate 32 having a wiring layer 33. The first layer 270 may be formed using a liquid resin material L1 or a film-like resin material F1.

[0077] 22B, a second layer 272 is formed on the first layer 270. The second layer 272 may be formed using a liquid resin material L2 or a film-like resin material F2.

[0078] Next, as shown in FIG. 22C, a mask material M1 is placed on the second layer 272. Then, the second layer 272 is exposed to light. Thereafter, the mask material M1 is removed from the second layer 272, and the second layer 272 is developed as shown in FIG. 22D. That is, the unexposed portions of the second layer 272 are removed. Here, the exposed portions of the second layer 272 become the optical waveguide 236.

[0079] 22E, a resin layer 274 is formed on the first layer 270 and the optical waveguide 236. The resin layer 274 may be formed using a liquid resin material L1 or a film-like resin material F1.

[0080] 22F, a via hole 276 is formed in the first layer 270 and the resin layer 274. This via hole 276 is a through hole that penetrates the first layer 270 and the resin layer 274. Note that the via hole 276 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.

[0081] 22G , wiring layer 290 is formed on resin layer 274, and via conductors 280 are formed in via holes 276 to connect wiring layer 33 and wiring layer 290. Note that the method for forming wiring layer 290 and via conductors 280 is similar to the method for forming via conductors 78 and wiring layer 38, and therefore description thereof will be omitted. Furthermore, the portion within via hole 276 constitutes via conductor 280, and the portion on resin layer 274 constitutes wiring layer 190.

[0082] In this manner, an optoelectronic composite wiring board 230 having optical wiring and electrical wiring is manufactured.

[0083] In the above manufacturing method, the unexposed portions of the second layer 272 are removed, but the configuration of the mask material M1 may be changed to remove the exposed portions of the second layer 272 and make the unexposed portions into the optical waveguide 236.

[0084] Next, a method for manufacturing a photoelectric composite wiring board 330, which is a modified example of the photoelectric composite wiring board 30, will be described.

[0085] 23A to 23I are cross-sectional schematic views illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board 330. As shown in FIG. 23I, optoelectronic composite wiring board 330 includes a first layer 370 (cladding layer) disposed on substrate 32 having wiring layer 33, a resin layer 374 (cladding layer) disposed on first layer 370, and an optical waveguide 336 disposed within resin layer 374 on first layer 370. First layer 370, resin layer 374, and optical waveguide 336 form an insulating layer on substrate 32. Second layer 372 is made of the same material as second layer 272.

[0086] 23A, a first layer 370 is formed on a substrate 32 having a wiring layer 33. The first layer 370 may be formed using a liquid resin material L1 or a film-like resin material F1.

[0087] 23B , via holes 376 are formed in the first layer 370. These via holes 376 are through-holes that penetrate the first layer 370. Note that the via holes 376 may be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0088] 23C , a wiring layer 390 is formed on the first layer 370, and a via conductor 380 is formed in the via hole 376 to connect the wiring layer 33 and the wiring layer 390. The method for forming the wiring layer 390 and the via conductor 380 is similar to the method for forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted. The portion inside the via hole 376 constitutes the via conductor 380, and the portion on the first layer 370 constitutes the wiring layer 390.

[0089] 23D , a second layer 372 is formed on the first layer 370 and the wiring layer 390. Note that the second layer 372 may be formed using a liquid resin material L2 or a film-like resin material F2.

[0090] Next, as shown in FIG. 23E, a mask material M1 is placed on the second layer 372. Then, the second layer 372 is exposed to light. Thereafter, the mask material M1 is removed from the second layer 372, and the second layer 372 is developed as shown in FIG. 23F. That is, the unexposed portions of the second layer 372 are removed. Here, the exposed portions of the second layer 372 become the optical waveguide 336.

[0091] 23G, a resin layer 374 is formed on the first layer 370 and the optical waveguide 336. The resin layer 374 may be formed using a liquid resin material L1 or a film-like resin material F1.

[0092] 23H, a via hole 377 is formed in the first layer 370 and the resin layer 374. This via hole 377 is a through hole that penetrates the first layer 370 and the resin layer 374. Note that the via hole 377 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.

[0093] 23I , a wiring layer 392 is formed on the resin layer 374, and a via conductor 382 is formed in the via hole 377 to connect the wiring layer 33 and the wiring layer 392. The method for forming the wiring layer 392 and the via conductor 380 is similar to the method for forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted. The portion inside the via hole 377 constitutes the via conductor 382, ​​and the portion on the resin layer 374 constitutes the wiring layer 392.

[0094] In this manner, an optoelectronic composite wiring board 330 having optical wiring and electrical wiring is manufactured.

[0095] In the above manufacturing method, the unexposed portions of the second layer 372 are removed, but the configuration of the mask material M1 may be changed to remove the exposed portions of the second layer 372 and make the unexposed portions into the optical waveguide 336.

[0096] Next, the laminate film will be described. As shown in FIG. 19, the laminate film SF2 includes a laminate (insulating layer) having a first resin layer containing a substance whose refractive index is modulated by light irradiation, and second resin layers formed on both sides of the first resin layer and having a refractive index different from that of the first resin layer, and a protective material P provided on each side of the laminate to protect both sides. The first resin layer includes a thermosetting resin. The substance contained in this first resin layer may be a substance whose refractive index increases when irradiated with light, or a substance whose refractive index decreases when irradiated with light. The second resin layer may also include a thermosetting resin. One of the two protective materials P may be used as a support film, and the other as a protective film. Here, the support film is not particularly limited, and examples thereof include polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, polyarylate, polysulfone, and liquid crystal polymers. Among these, from the viewpoints of flexibility and toughness, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polycarbonate, polyamide, polyimide, polyamideimide, polyphenylene ether, polyphenylene sulfide, polyarylate, and polysulfone are preferred. Furthermore, from the viewpoints of improving the transmittance of actinic rays for exposure and reducing sidewall roughness of the core pattern, it is even more preferable to use a highly transparent support film. Note that, from the viewpoint of improving releasability from the resin layer, a film that has been subjected to a release treatment with a silicone compound, a fluorine-containing compound, or the like may be used as needed. The thickness of the support film may be varied depending on the desired flexibility, but is preferably 3 μm to 250 μm. If the thickness is 3 μm or more, the film strength is sufficient, and if the thickness is 250 μm or less, sufficient flexibility is obtained. From the above viewpoints, the thickness of the support film is more preferably 5 μm to 200 μm, and even more preferably 7 μm to 150 μm.

[0097] A photosensitive resin film produced by applying a photosensitive resin varnish or a photosensitive resin composition to a support film may have a protective film attached to the resin layer, if necessary, to form a three-layer structure consisting of the support film, the resin layer, and the protective film. The protective film is not particularly limited, but from the viewpoints of flexibility and toughness, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene, etc. are preferred. Furthermore, from the viewpoint of improving peelability from the resin layer, a film that has been subjected to a release treatment using a silicone-based compound, a fluorine-containing compound, or the like may be used as needed. The thickness of the protective film may be varied as appropriate depending on the desired flexibility, but is preferably 10 μm to 250 μm. A thickness of 10 μm or more provides sufficient film strength, while a thickness of 250 μm or less provides sufficient flexibility. From the above viewpoints, the thickness of the protective film is more preferably 15 μm to 200 μm, and even more preferably 20 μm to 150 μm.

[0098] In the present disclosure, a substrate having a plurality of insulating layers on the first wiring may be prepared, and the prepared substrate may be subjected to a treatment such as exposure.

[0099] Although the embodiments of the present disclosure have been described above, these embodiments are merely examples and can be modified in various ways without departing from the spirit of the present disclosure. It goes without saying that the scope of the present disclosure is not limited to these embodiments.

[0100] 20, 21, 22, 23, 24, 25, 26...Semiconductor package, 30...Optoelectronic composite wiring board, 32...Substrate, 32A...Through hole, 33...Wiring layer, 34...Insulating layer, 36...Optical waveguide, 38...Wiring layer, 40...Via conductor, 42...Light guide portion, 42A...Guide body, 42B...Reflecting mirror, 44...Optical connector, 50...Optical circuit chip, 52...Light introduction port, 54...Chip electrode, 60...Electronic circuit chip, 62...Chip electrode, 70...First layer, 72...Second layer, 74...Third layer, 76...Via hole, 78...Via conductor, 78A...Seed layer, 78B...Electrolytic plating layer, 130...Optoelectronic composite wiring board, 136...Optical waveguide, 170...First layer, 172...Second layer, 174...Third layer, 176...Via hole, 177...Via hole, 178... Via hole, 180...via conductor, 182...via conductor, 184...via conductor, 190...wiring layer, 192...wiring layer, 194...wiring layer, 230...optoelectronic composite wiring board, 236...optical waveguide, 270...first layer, 272...second layer, 274...resin layer, 276...via hole, 280...via conductor, 290...wiring layer, 330...optoelectronic composite wiring board, 336...optical waveguide, 370...first layer, 372...second layer, 374...resin layer, 376...via hole, 377...via hole, 380...via conductor, 382...via conductor, 390...wiring layer, 392...wiring layer, F1...resin material, F2...resin material, L1...resin material, L2...resin material, M1...mask material, P...protective material, R1...resist material, SF1...laminated film, SF2...laminated film.

Claims

1. A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: forming an insulating layer having multiple layers made of different materials on a substrate having a first wiring layer; exposing at least one layer of the insulating layer to light to form an optical waveguide; forming a via hole in the insulating layer; forming a second wiring layer on the insulating layer, and forming a via conductor in the via hole that connects the first wiring layer and the second wiring layer.

2. The method for producing an optoelectronic composite wiring board according to claim 1, wherein, of said plurality of layers, a layer forming said optical waveguide contains a material whose refractive index is modulated by exposure to light.

3. The method for producing an optoelectronic composite wiring board according to claim 2, wherein the layer forming the optical waveguide contains a material whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm.

4. The method for producing an optoelectronic composite wiring board according to claim 2, wherein the layer forming the optical waveguide contains a material whose refractive index decreases when exposed to light with a wavelength of 10 nm to 450 nm.

5. A method for producing an optoelectronic composite wiring board according to any one of claims 1 to 4, wherein at least one of the insulating layers contains a thermosetting resin.

6. A method for manufacturing an optoelectronic composite wiring board according to any one of claims 1 to 5, wherein the multiple layers in the insulating layer are formed by laminating one layer at a time on the substrate.

7. A method for producing an optoelectronic composite wiring board according to any one of claims 1 to 6, wherein at least one of the insulating layers is formed from a liquid resin material.

8. A method for producing an optoelectronic composite wiring board according to any one of claims 1 to 7, wherein at least one of the insulating layers is formed from a film-like resin material.

9. A method for manufacturing an optoelectronic composite wiring board according to any one of claims 1 to 8, wherein the insulating layer is formed by mounting a laminate formed by stacking the multiple layers on the substrate.

10. The method for producing an optoelectronic composite wiring board according to claim 9, wherein the laminate is formed by stacking layers formed of a film-like resin material.

11. The method for manufacturing an optoelectronic composite wiring board as described in claim 1, wherein the insulating layer is formed by stacking three layers, and the layer forming the optical waveguide is located between the three layers.

12. A method for manufacturing a photoelectric composite wiring board, comprising the steps of: forming a first insulating layer on a substrate having a first wiring layer; forming a first via hole in the first insulating layer; forming a second wiring layer on the first insulating layer, and forming a first via conductor connecting the first wiring layer and the second wiring layer in the first via hole; forming a second insulating layer on the second wiring layer, the second insulating layer being made of a material different from that of the first insulating layer; exposing the second insulating layer to form an optical waveguide; forming a second via hole in the second insulating layer; forming a third wiring layer on the second insulating layer, and forming a second via conductor connecting the second wiring layer and the third wiring layer in the second via hole.

13. The method for producing an optoelectronic composite wiring board according to claim 12, wherein the second insulating layer contains a material whose refractive index changes upon exposure to light.

14. The method for producing an optoelectronic composite wiring board according to claim 13, wherein the second insulating layer contains a material whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm.

15. The method for producing an optoelectronic composite wiring board according to claim 13, wherein the second insulating layer contains a material whose refractive index decreases when exposed to light having a wavelength of 10 nm to 450 nm.

16. A method for producing an optoelectronic composite wiring board according to any one of claims 12 to 15, wherein the first insulating layer and the second insulating layer contain a thermosetting resin.

17. A method for producing an optoelectronic composite wiring board according to any one of claims 12 to 16, wherein at least one of the first insulating layer and the second insulating layer is formed from a liquid resin material.

18. A method for manufacturing an optoelectronic composite wiring board according to any one of claims 12 to 17, wherein at least one of the first insulating layer and the second insulating layer is formed from a film-like resin material.

19. A method for manufacturing an optoelectronic composite wiring board according to any one of claims 12 to 18, wherein the first via conductor and the second via conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

20. A method for manufacturing a photoelectric composite wiring board as described in claim 19, comprising the steps of: forming a third insulating layer on the third wiring layer, the third insulating layer being made of a material different from that of the second insulating layer; forming a third via hole in the third insulating layer; forming a fourth wiring layer on the third insulating layer and forming a third via conductor connecting the third wiring layer and the fourth wiring layer in the third via hole, wherein the second via conductor and the third via conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.

21. A method for manufacturing an optoelectronic composite wiring board, comprising the steps of: laminating a plurality of layers made of different materials on a substrate having a first wiring layer, and exposing and developing one of the plurality of layers to form an optical waveguide; forming a via hole in an insulating layer formed by laminating the plurality of layers; and forming a second wiring layer on the insulating layer, and forming a via conductor in the via hole that connects the first wiring layer and the second wiring layer.

22. The method for producing an optoelectronic composite wiring board according to claim 21, wherein the layer forming the optical waveguide contains a photosensitive material and a thermosetting resin.

23. The method for producing an optoelectronic composite wiring board according to claim 21, wherein the layer forming the optical waveguide contains a negative or positive photosensitive material and a thermosetting resin.

24. The method for producing an optoelectronic composite wiring board as described in claim 21, wherein the insulating layer is formed by stacking three layers, and a layer forming the optical waveguide is located between the three layers.

25. A method for producing an optoelectronic composite wiring board as described in claim 21, comprising laminating a plurality of layers made of different materials on the substrate, exposing and developing the topmost layer to form an optical waveguide, and laminating another layer on the optical waveguide to form the insulating layer.

26. A method for producing an optoelectronic composite wiring board according to any one of claims 21 to 24, wherein the multiple layers in the insulating layer are formed by laminating one by one on the substrate.

27. A method for producing an optoelectronic composite wiring board according to any one of claims 21 to 26, wherein at least one layer of the multiple layers made of different materials is formed from a liquid resin material.

28. A method for producing an optoelectronic composite wiring board according to any one of claims 21 to 26, wherein at least one of the multiple layers made of different materials is formed from a film-like resin material.

29. A method for manufacturing a photoelectric composite wiring board, comprising the steps of: forming a first insulating layer on a substrate having a first wiring layer; forming a first via hole in the first insulating layer; forming a second wiring layer on the first insulating layer, and forming a first via conductor connecting the first wiring layer and the second wiring layer in the first via hole; forming a second insulating layer on the second wiring layer, the second insulating layer being made of a different material than the first insulating layer; exposing and developing the second insulating layer to form an optical waveguide; forming a third insulating layer on the second insulating layer, the third insulating layer being made of a different material than the second insulating layer; forming a second via hole in the third insulating layer; forming a third wiring layer on the third insulating layer, and forming a second via conductor connecting the second wiring layer and the third wiring layer in the second via hole.

30. The method for producing an optoelectronic composite wiring board according to claim 29, wherein the second insulating layer comprises a photosensitive material and a thermosetting resin.

31. The method for producing an optoelectronic composite wiring board according to claim 29, wherein the second insulating layer comprises a negative or positive photosensitive material and a thermosetting resin.

32. A method for manufacturing an optoelectronic composite wiring board according to any one of claims 29 to 31, wherein the first via conductor and the second via conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

33. A method for producing an optoelectronic composite wiring board according to any one of claims 29 to 32, wherein at least one of the first insulating layer and the second insulating layer is formed from a liquid resin material.

34. A method for producing an optoelectronic composite wiring board according to any one of claims 29 to 32, wherein at least one of the first insulating layer and the second insulating layer is formed from a film-like resin material.

35. A method for manufacturing a photoelectric composite wiring board, comprising the steps of: forming a first clad layer on the first surface, the second surface and an inner wall surface of the through hole of a substrate having a first surface, a second surface opposite the first surface, through holes opening into the first surface and the second surface, respectively, and a first wiring layer formed on the first surface; forming a core layer on the first clad layer on the first surface and the second surface and forming the core layer between the first clad layer on the inner wall surface; forming a second clad layer on the core layer on the first surface and the second surface, respectively; exposing the core layer to form an optical waveguide; forming a via hole in a first insulating layer composed of the first clad layer, the second clad layer and the core layer on the first surface; forming a second wiring layer on the first insulating layer and forming a via conductor in the via hole electrically connecting the first wiring layer and the second wiring layer.

36. The method for producing an optoelectronic composite wiring board according to claim 35, wherein at least one of the first clad layer, the core layer and the second clad layer is formed from a liquid resin material.

37. The method for producing an optoelectronic composite wiring board according to claim 35, wherein at least one of the first clad layer, the core layer and the second clad layer is formed from a film-like resin material.

38. The method for producing an optoelectronic composite wiring board according to any one of claims 35 to 37, wherein the core layer contains a substance whose refractive index changes upon exposure to light.

39. A method for manufacturing a photoelectric composite wiring board, comprising the steps of: forming a first clad layer on the first surface, the second surface and an inner wall surface of the through hole of a substrate having a first surface, a second surface opposite the first surface, through holes opening into the first surface and the second surface, respectively, and a first wiring layer formed on the first surface; forming a core layer on the first clad layer on the first surface and the second surface and forming the core layer between the first clad layers on the inner wall surface; exposing and developing the core layer to form an optical waveguide; forming a second clad layer on the first surface and the second surface so as to cover the core layer, respectively; forming a via hole in a first insulating layer composed of the first clad layer, the second clad layer and the core layer on the first surface; forming a second wiring layer on the first insulating layer and forming a via conductor in the via hole electrically connecting the first wiring layer and the second wiring layer.

40. The method for producing an optoelectronic composite wiring board according to claim 39, wherein at least one of the first clad layer, the core layer and the second clad layer is formed from a liquid resin material.

41. The method for producing an optoelectronic composite wiring board according to claim 39, wherein at least one of the first clad layer, the core layer and the second clad layer is formed from a film-like resin material.

42. A method for producing an optoelectronic composite wiring board according to any one of claims 39 to 41, wherein the core layer contains a negative or positive photosensitive material and a thermosetting resin.

43. An optoelectronic composite wiring board formed by using the method for manufacturing an optoelectronic composite wiring board according to any one of claims 1 to 11.

44. An optoelectronic composite wiring board comprising: a substrate having a first wiring layer; an insulating layer formed on the substrate and having a plurality of layers made of different materials and a via hole; an optical waveguide formed in the insulating layer; a second wiring layer formed on the insulating layer; and a via conductor formed in the via hole and connecting the first wiring layer and the second wiring layer.

45. An optoelectronic composite wiring board formed by using the method for manufacturing an optoelectronic composite wiring board according to any one of claims 12 to 20.

46. ​​An optoelectronic composite wiring board comprising: a substrate having a first wiring layer; a first insulating layer formed on the substrate and having a first via hole; a second wiring layer formed on the first insulating layer; a first via conductor formed in the first via hole and connecting the first wiring layer and the second wiring layer; a second insulating layer formed on the second wiring layer and having a second via hole; an optical waveguide formed in the second insulating layer; a third wiring layer formed on the second insulating layer; and a second via conductor formed in the second via hole and connecting the second wiring layer and the third wiring layer.

47. The photoelectric composite wiring board according to claim 46, wherein the first via conductor and the second via conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

48. An optoelectronic composite wiring board as described in claim 46, comprising: a third insulating layer formed on the third wiring layer and having a third via hole; a fourth wiring layer formed on the third insulating layer; and a third via conductor formed in the third via hole and connecting the third wiring layer and the fourth wiring layer, wherein the second via conductor and the third via conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.

49. An optoelectronic composite wiring board formed by using the method for manufacturing an optoelectronic composite wiring board according to any one of claims 21 to 28.

50. An optoelectronic composite wiring board formed by using the method for manufacturing an optoelectronic composite wiring board according to any one of claims 29 to 34.

51. An optoelectronic composite wiring board comprising: a substrate having a first surface, a second surface opposite to the first surface, through holes opening into the first surface and the second surface, and a first wiring layer formed on the first surface; a first insulating layer formed on the first surface of the substrate and having a via hole; a second wiring layer formed on the first insulating layer; a via conductor electrically connecting the first wiring layer and the second wiring layer; a first optical waveguide formed in the first insulating layer; a second insulating layer formed on the second surface of the substrate; a second optical waveguide formed in the second insulating layer; and a third optical waveguide formed in the through hole and optically connecting the first optical waveguide and the second optical waveguide.

52. A semiconductor package comprising: an optoelectronic composite wiring board as defined in claim 43 or 44; an optical circuit chip connected to an optical waveguide of said optoelectronic composite wiring board; and an electronic circuit chip disposed on the second wiring layer of said optoelectronic composite wiring board.

53. A semiconductor package comprising: the optoelectronic composite wiring board according to claim 48; an optical circuit chip connected to an optical waveguide of said optoelectronic composite wiring board; and an electronic circuit chip disposed on a fourth wiring layer of said optoelectronic composite wiring board.

54. A semiconductor package comprising: the optoelectronic composite wiring board according to claim 49; an optical circuit chip connected to the optical waveguide of said optoelectronic composite wiring board; and an electronic circuit chip disposed on the second wiring layer of said optoelectronic composite wiring board.

55. A semiconductor package comprising: the optoelectronic composite wiring board according to claim 50; an optical circuit chip connected to an optical waveguide of said optoelectronic composite wiring board; and an electronic circuit chip disposed on a third wiring layer of said optoelectronic composite wiring board.

56. A semiconductor package comprising: an optoelectronic composite wiring board according to claim 51; an optical circuit chip optically connected to a first optical waveguide of said optoelectronic composite wiring board; and an electronic circuit chip electrically connected to a second wiring layer of said optoelectronic composite wiring board.

57. A laminate film comprising: a laminate having a first resin layer containing a substance whose refractive index is modulated by light irradiation; and a second resin layer formed on each side of the first resin layer and having a refractive index different from that of the first resin layer; and protective films provided on each side of the laminate to protect both sides.

58. The laminate film of claim 57, wherein the first resin layer comprises a thermosetting resin.

59. The laminate film according to claim 58, wherein the substance contained in the first resin layer is a substance whose refractive index increases when irradiated with light.

60. The laminate film according to claim 58, wherein the substance contained in the first resin layer is a substance whose refractive index decreases when irradiated with light.

61. The laminate film according to any one of claims 57 to 60, wherein the second resin layer contains a thermosetting resin.

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