Substrate treatment method and device

Abstract

The present application relates to a substrate treatment method and device. The substrate treatment method comprises: a first liquid treatment step: in a cavity that is in a first gas atmosphere, carrying out liquid treatment on a substrate by means of a first liquid, wherein the first gas atmosphere indicates that only a first gas is present in the cavity; a gas atmosphere replacement step: replacing the atmosphere of the cavity from the first gas atmosphere to a second gas atmosphere, wherein the second gas atmosphere indicates that only a second gas is present in the cavity, and the second gas is different from the first gas; and a second liquid treatment step: in the cavity that is in the second gas atmosphere, carrying out liquid treatment on the substrate by means of a second liquid, wherein the second liquid is different from the first liquid. By means of the present application, the problem in the related art of the waste of specialty gases is solved, thereby avoiding the waste of specialty gases, and saving the costs.

Description

Substrate processing method and device Technical Field

[0001] The present invention relates to the field of substrate processing, and in particular to a substrate processing method and device. Background Art

[0002] For semiconductor substrate cleaning / wet etching, a stable and controllable system is obviously very important, especially for certain specific solutions (such as tetramethylammonium hydroxide (TMAH)).

[0003] In the current cleaning and etching processes, in order to promptly remove residual chemicals and products from the semiconductor substrate cleaning / wet etching process and solve the particle problem, special gases (similar to nitrogen or rare gases) are continuously delivered to the cleaning chamber. This not only causes a waste of special gases, but also increases costs.

[0004] Currently, no effective solution has been proposed for the problem of special gas waste in related technologies.

[0005] Summary of the Invention

[0006] The embodiments of the present application provide a substrate processing method and apparatus to at least solve the problem of waste of special gases in the related art.

[0007] In a first aspect, an embodiment of the present application provides a substrate processing method, the method comprising:

[0008] A first liquid treatment step: performing liquid treatment on the substrate using a first liquid in a chamber in a first gas atmosphere, wherein the first gas atmosphere means that only the first gas is present in the chamber;

[0009] a gas atmosphere replacement step: replacing the atmosphere of the chamber from the first gas atmosphere to a second gas atmosphere, wherein the second gas atmosphere means that only a second gas is present in the chamber, and the second gas is different from the first gas;

[0010] A second liquid treatment step: performing liquid treatment on the substrate using a second liquid in the chamber in the second gas atmosphere, where the second liquid is different from the first liquid.

[0011] In some embodiments, the second gas is a non-oxygen-containing gas.

[0012] In some embodiments, in the gas atmosphere replacement step, the replacement time used to replace the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere is not less than the replacement critical time, wherein the replacement critical time is the minimum time used to ensure that only the second gas is present in the chamber.

[0013] In some embodiments, the gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixture of the first gas and the second gas, and the second gas;

[0014] The displacement critical time t satisfies the following equation:

[0015] Wherein, V is the volume occupied by the gas in the chamber;

[0016] Q is the gas flow rate of the gas exhausted from the chamber during the gas atmosphere replacement step.

[0017] In some of these embodiments,

[0018] The second liquid processing step further includes: introducing the second gas into the chamber, exhausting the second gas from the chamber, and recovering the second gas exhausted from the chamber.

[0019] In some of the embodiments, the method further includes filtering the second gas exhausted from the chamber before recovering the second gas exhausted from the chamber.

[0020] In some of these embodiments,

[0021] The first liquid processing step further includes: introducing the first gas into the chamber and simultaneously exhausting the first gas from the chamber;

[0022] The gas atmosphere replacement step further includes exhausting gas from the chamber, where the gas includes any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas.

[0023] In some embodiments, the first liquid is a cleaning liquid, and the second liquid is an etching liquid.

[0024] In some embodiments, the first gas is an oxygen-containing gas.

[0025] In a second aspect, an embodiment of the present application further provides a substrate processing device, comprising: a chamber and a controller,

[0026] The chamber is provided with a first air inlet pipeline, a second air inlet pipeline and an air outlet pipeline, wherein the first air inlet pipeline is used to introduce a first gas into the chamber; the second air inlet pipeline is used to introduce a second gas into the chamber, and the air outlet pipeline is used to exhaust gas from the chamber; the controller is used to control the substrate processing device to perform the substrate processing method as described in the first aspect.

[0027] In some embodiments, a recovery device is further included, connected to the gas outlet pipeline, for accommodating the recovered second gas.

[0028] In some embodiments, a filtering device is further included, which is arranged on the gas outlet pipeline and connected to the recovery device, and is used to filter the second gas discharged from the chamber and allow the filtered second gas to enter the recovery device.

[0029] In some embodiments, the gas outlet pipeline includes a first gas outlet pipeline and a second gas outlet pipeline, wherein the first gas outlet pipeline is used to discharge the first gas from the chamber, and the second gas outlet pipeline is used to discharge the second gas from the chamber.

[0030] Compared to related technologies, the substrate processing method and apparatus provided in embodiments of the present application include: a first liquid processing step: liquid-treating the substrate using a first liquid in a chamber in a first gas atmosphere; a gas atmosphere replacement step: replacing the chamber atmosphere from the first gas atmosphere to a second gas atmosphere; and a second liquid processing step: liquid-treating the substrate using a second liquid in the chamber in the second atmosphere. This solves the problem of waste of special gases in related technologies, avoids waste of special gases, and saves costs.

[0031] The details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more readily apparent.

[0032] Summary of the Figures

[0033] The features and properties of the present invention are further described by the following examples and accompanying drawings.

[0034] FIG1 is a flow chart of a substrate processing method according to a first embodiment of the present application;

[0035] FIG2 is a schematic structural diagram of a substrate processing apparatus according to a second embodiment of the present application;

[0036] FIG3 is a schematic structural diagram of a substrate processing apparatus according to a third embodiment of the present application.

[0037] Preferred embodiments of the present invention

[0038] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is described and illustrated below in conjunction with the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application. In addition, it can also be understood that although the efforts made in this development process may be complex and lengthy, for ordinary technicians in the field related to the contents disclosed in the present application, some changes such as design, manufacturing or production based on the technical contents disclosed in the present application are only conventional technical means and should not be understood as the contents disclosed in the present application being insufficient.

[0039] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it refer to independent or alternative embodiments that are mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments unless there is a conflict.

[0040] Unless otherwise defined, the technical or scientific terms used in this application should have the ordinary meaning understood by a person of ordinary skill in the technical field to which this application belongs. The words "one", "a", "the" and the like used in this application do not indicate a limit on quantity and may indicate the singular or plural. The terms "include", "comprise", "have" and any variations thereof used in this application are intended to cover non-exclusive inclusions; for example, a process, method, system, product or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units that are not listed, or may also include other steps or units that are inherent to these processes, methods, products or devices. The words "connect", "connected", "coupled" and the like used in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The word "multiple" used in this application means greater than or equal to two. "And / or" describes the association relationship of associated objects, indicating that three relationships can exist. For example, "A and / or B" can mean: A exists alone, A and B exist at the same time, and B exists alone. The terms "first", "second", "third" and the like involved in this application are merely used to distinguish similar objects and do not represent a specific ordering of the objects.

[0041] First embodiment

[0042] The present invention provides a substrate processing method. FIG1 is a flow chart of the substrate processing method according to an embodiment of the present invention. As shown in FIG1 , the method includes the following steps:

[0043] First liquid processing step S102: performing liquid processing on the substrate using a first liquid in a chamber in a first gas atmosphere, wherein the first gas atmosphere means that there is only the first gas in the chamber.

[0044] In this embodiment, the first liquid may be a cleaning liquid; and the first gas may be an oxygen-containing gas.

[0045] Gas atmosphere replacement step S104: replacing the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere, wherein the second gas atmosphere means that there is only a second gas in the chamber, and the second gas is different from the first gas.

[0046] It should be noted that the starting time of replacing the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere in step S104 can be after the first liquid completes the liquid treatment of the substrate, or can be during the process of the first liquid treating the substrate, which is not specifically limited in this embodiment.

[0047] Second liquid treatment step S106: In a chamber in a second gas atmosphere, liquid treatment is performed on the substrate using a second liquid, where the second liquid is different from the first liquid.

[0048] In some embodiments, the second liquid may be an etching solution; and the second gas may be a non-oxygen-containing gas.

[0049] It should be noted that in the substrate processing method of the present application, compared with the first liquid, the second liquid has higher requirements on the chamber atmosphere when liquid-treating the substrate. In other words, the first liquid can not only liquid-treat the substrate under the first gas atmosphere, but also liquid-treat the substrate under the second gas atmosphere, but the second liquid cannot liquid-treat the substrate under the first gas atmosphere. For example, in a specific example of an etching process for a substrate, the first liquid is deionized water and the second liquid is TMAH, wherein, when the deionized water performs a cleaning process (liquid treatment) on the substrate, the chamber is in the first gas atmosphere; when the TMAH performs an etching process (liquid treatment) on the substrate, the chamber is in the second gas atmosphere. Compared with deionized water, the etching rate and effect of TMAH are greatly affected by the oxygen content in the chamber. For this reason, the second gas atmosphere needs to be a non-oxygen-containing gas atmosphere, that is, the second gas needs to adopt a non-oxygen-containing gas, such as a high-cost non-oxygen-containing gas such as nitrogen or a rare gas, so as to achieve etching of the substrate by TMAH in an oxygen-free environment. However, the cleaning efficiency and effect of deionized water are not affected by the oxygen content in the chamber, that is, the first gas can be selected not to use high-cost non-oxygen-containing gas, but to use low-cost gas such as compressed air, thereby saving the use of non-oxygen-containing gas in the entire etching process of the substrate and reducing process costs.

[0050] It should be noted that the steps shown in the above process or the flowcharts in the accompanying drawings can be executed in a computer system, such as a set of computer-executable instructions, and although the flowcharts show a logical order, in some cases, the steps shown or described can be executed in a different order. For example, step S106 can be executed first, and then step S102, etc.

[0051] During the atmosphere replacement step S104, there may be a problem where the replacement time is too short, resulting in incomplete replacement of the first gas atmosphere in the chamber with the second gas atmosphere, and some of the first gas may remain in the chamber. Therefore, to avoid the aforementioned problem of incomplete atmosphere replacement due to a short replacement time, in some embodiments, the replacement time for the chamber atmosphere to be replaced from the first gas atmosphere to the second gas atmosphere in step S104 may be no less than a critical replacement time, where the critical replacement time is the minimum time required to maintain only the second gas in the chamber.

[0052] In addition, when executing the atmosphere replacement step S104, there may be a problem of waste of the second gas due to the replacement time being too long. Therefore, in order to avoid the problem of waste of the second gas due to the replacement time being too long, in step S104, the replacement time for replacing the gas atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere is set to 1.3 to 1.5 times the replacement critical time.

[0053] In this embodiment, the replacement time of the gas atmosphere in the chamber is set according to the replacement critical time, so that the replacement time can be accurately controlled to avoid the replacement time being too long or too short.

[0054] In some embodiments, the gas atmosphere replacement step further comprises: exhausting gas from the chamber, the gas comprising any one of the first gas, a mixture of the first gas and the second gas, and the second gas;

[0055] Specifically, the replacement critical time t can satisfy the following equation:

[0056] Where V is the volume occupied by the gas in the chamber;

[0057] Q is the gas flow rate of the gas exhausted from the chamber during the gas atmosphere replacement step.

[0058] It should be noted that, in conjunction with Figure 2, when a fan 16 is provided on the chamber 10, since the fan 16 is connected to the chamber 10, the volume of the chamber 10 at this time actually also includes the volume inside the fan. Therefore, the atmosphere replacement volume is the sum of the volumes of the fan and the chamber body.

[0059] To further improve the utilization rate of the second gas (a non-oxygen-containing gas such as nitrogen or a rare gas), in some embodiments, the substrate processing method of the present application further includes a step of recycling the second gas. Specifically, the second liquid processing step S106 further includes: introducing the second gas into the chamber, simultaneously exhausting the second gas from the chamber, and recovering the second gas exhausted from the chamber. Therefore, by recovering the second gas exhausted from the chamber during the second liquid processing step S106, the second gas can be recycled, thereby avoiding waste of the second gas and improving the utilization rate of the second gas.

[0060] In some embodiments, the second gas exhausted from the chamber may be filtered before being recovered. By filtering the second gas before recovery, other gases can be filtered, thereby improving the purity of the second gas.

[0061] It should be noted that the filtering method can achieve filtering of the second gas through a separation device or a gas purification device.

[0062] In some embodiments, the first liquid treatment step further includes: introducing a first gas into the chamber and simultaneously exhausting the first gas from the chamber; and the gas atmosphere replacement step further includes: exhausting gas from the chamber, where the gas includes any one of the first gas, a mixture of the first gas and the second gas, or the second gas. According to these embodiments, the introduction and exhaust of gas into and out of the chamber is a continuous process, which facilitates control of gas transmission.

[0063] Second embodiment

[0064] The present application also provides a substrate processing device that can be used to perform the substrate processing method described above. It should be noted that the substrate processing method described above can also be performed by any other device that can implement the method, and is not limited to the substrate processing device of the present application.

[0065] Figure 2 is a structural schematic diagram of a substrate processing device according to an embodiment of the present application. As shown in Figure 2, the device includes: a chamber 10 and a controller (not shown in the figure), and the chamber 10 is provided with a first air inlet pipe 11, a second air inlet pipe 12 and an air outlet pipe 13, wherein the first air inlet pipe 11 is used to pass the first gas into the chamber 10; the second air inlet pipe 12 is used to pass the second gas into the chamber 10; the air outlet pipe 13 is used to exhaust the gas from the chamber 10; wherein, the chamber 10 is further provided with a nozzle 18 for supplying the first liquid or the second liquid to the substrate 19; the chamber 10 is provided with a fan 16, and the first air inlet pipe 11 and the second air inlet pipe 12 are connected to the chamber 10 through the fan 16; the chamber 1 is also provided with a carrier 20, and the carrier 20 is used to carry the substrate 19.

[0066] The present application does not limit the specific placement of the first air inlet conduit 11, the second air inlet conduit 12, and the air outlet conduit 13 on the chamber 10. As shown in FIG2 , the first air inlet conduit 11 and the second air inlet conduit 12 are located at the top of the chamber 10, and the air outlet conduit 13 is located at the bottom of the chamber 10. This arrangement facilitates complete exhaust and replacement of gases.

[0067] In this embodiment, the controller is used to control the substrate processing apparatus to execute the substrate processing method of the first embodiment.

[0068] Specifically, in the first liquid processing step S102, the controller controls the first gas inlet line 11 to supply the first gas into the chamber 10, and controls the gas outlet line 13 to discharge the first gas from the chamber 10, so that the chamber 10 is in the first gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the first liquid to the substrate 19, so as to perform liquid processing on the substrate 19 through the first liquid.

[0069] In the gas atmosphere replacement step S104, the controller controls the second gas inlet line 12 to supply the second gas into the chamber 10 while controlling the gas outlet line 13 to exhaust the gas from the chamber 10. Simultaneously, the controller controls the first gas inlet line 11 to close, thereby replacing the atmosphere of the chamber 10 from the first gas atmosphere to the second gas atmosphere. It will be appreciated that in step S104, initially, the exhausted gas may still be the first gas. As the amount of the second gas gradually increases, the exhausted gas will include both the first and second gases.

[0070] In the second liquid processing step S106, the controller controls the second gas inlet line 12 to supply the second gas into the chamber 10, and controls the gas outlet line 13 to discharge the second gas from the chamber 10, so that the chamber 10 is in a second gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the second liquid to the substrate 19, so as to perform liquid processing on the substrate 19 through the second liquid.

[0071] In addition, the device may also be provided with a recovery device (not shown in the figure), so that the controller can also recover the second gas discharged from the gas outlet pipeline 13 by controlling the recovery device while executing the second liquid processing step S106.

[0072] In some embodiments, the device may also be provided with a filtering device (not shown in the figure), which is provided on the gas outlet pipeline and connected to the recovery device, for filtering the second gas discharged from the chamber 10 and allowing the filtered second gas to enter the recovery device.

[0073] It should be noted that the specific examples in this embodiment can refer to the examples described in the above method embodiments and optional implementation modes, and this embodiment will not be repeated here.

[0074] Third embodiment

[0075] An embodiment of the present application further provides a substrate processing device. FIG3 is a schematic structural diagram of the substrate processing device according to the embodiment of the present application. As shown in FIG3 , the only difference from the second embodiment is the arrangement of the gas outlet pipeline of the chamber. Specifically, in the third embodiment, the chamber 10 is provided with two gas outlet pipelines, namely a first gas outlet pipeline 14 and a second gas outlet pipeline 15 , which can avoid the first gas from remaining in the second gas outlet pipeline 15 , so that when the second gas is recovered through the second gas outlet pipeline 15 , there is the first gas, which causes the problem of impure second gas recovery.

[0076] In this embodiment, the controller is used to control the substrate processing apparatus to execute the substrate processing method of the first embodiment.

[0077] Specifically, in the first liquid processing step S102, the controller controls the first gas inlet line 11 to supply the first gas into the chamber 10 and the first gas outlet line 14 to exhaust the first gas from the chamber 10, thereby placing the chamber 10 in the first gas atmosphere. Simultaneously, the controller controls the nozzle 18 to supply the first liquid to the substrate 19, thereby performing liquid processing on the substrate 19 with the first liquid. Specifically, the controller may control the first gas outlet line 14 to be open, while the second gas inlet line 12 and the second gas outlet line 15 are both closed.

[0078] In the gas atmosphere replacement step S104, the controller controls the second gas inlet line 12 to supply the second gas into the chamber 10 while controlling the first gas outlet line 14 to exhaust the gas from the chamber 10. Simultaneously, the controller also controls the first gas inlet line 11 and the second gas outlet line 15 to close, thereby replacing the atmosphere of the chamber 10 from the first gas atmosphere to the second gas atmosphere. In this embodiment, exhausting the gas through the first gas outlet line 14 throughout the entire atmosphere replacement process avoids the problem of steps S102, S104, and S106 sharing the same pipeline, where the presence of the first gas would cause the recovered second gas to be impure, thereby improving the purity of the recovered second gas.

[0079] In the second liquid processing step S106, the controller controls the second gas inlet line 12 to supply the second gas into the chamber 10, and controls the second gas outlet line 15 to discharge the second gas from the chamber 10. At the same time, the controller also controls the first gas inlet line 11 and the first gas outlet line 14 to be closed so that the chamber 10 is in the second gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the second liquid to the substrate 19 so as to perform liquid processing on the substrate 19 through the second liquid.

[0080] In addition, the device may also be provided with a recovery device (not shown in the figure), and the controller may also recover the second gas discharged from the chamber 10 through the second gas outlet pipe 15 by controlling the recovery device while executing the second liquid processing step S106.

[0081] In some embodiments, the device may also be provided with a filtering device (not shown in the figure), which is arranged on the second gas outlet pipe 15 and connected to the recovery device, for filtering the second gas discharged from the chamber 10 and allowing the filtered second gas to enter the recovery device.

[0082] In this embodiment, by setting up a first gas outlet pipeline and a second gas outlet pipeline, gas containing the first gas can be discharged from the chamber through the first gas outlet pipeline in both the first liquid processing step S102 and the atmosphere replacement step S104. After the chamber is completely replaced with the second gas atmosphere, when the second liquid processing step S106 is started, the chamber exhaust path is switched from the first gas outlet pipeline to the second gas outlet pipeline, and the second gas is recovered through the second gas outlet pipeline, thereby avoiding the problem that steps S102, S104 and S106 share the same pipeline and the first gas exists in the pipeline, which causes the recovered second gas to be impure, thereby improving the recovery purity of the second gas.

[0083] It should be noted that the specific examples in this embodiment can refer to the examples described in the above method embodiments and optional implementation modes, and this embodiment will not be repeated here.

[0084] Those skilled in the art should understand that the various technical features of the above-described embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the various technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0085] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A substrate processing method, characterized in that: The method comprises: A first liquid treatment step: performing liquid treatment on the substrate by using a first liquid in a chamber in a first gas atmosphere, wherein the first gas atmosphere means that there is only the first gas in the chamber; A gas atmosphere replacement step: replacing the atmosphere of the chamber from the first gas atmosphere to a second gas atmosphere, wherein the second gas atmosphere means that there is only a second gas in the chamber, and the second gas is different from the first gas; A second liquid treatment step: performing liquid treatment on the substrate using a second liquid in the chamber in the second gas atmosphere, wherein the second liquid is different from the first liquid.

2. The substrate processing method according to claim 1, characterized in that: The second gas is a non-oxygen-containing gas.

3. The substrate processing method according to claim 1, characterized in that: In the gas atmosphere replacement step, the replacement time for replacing the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere is not less than the replacement critical time. The critical replacement time is the minimum time required for the chamber to contain only the second gas.

4. The substrate processing method according to claim 3, characterized in that: The gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas; The replacement critical time t satisfies the following equation: Wherein, V is the volume occupied by the gas in the chamber; Q is the gas flow rate of the gas exhausted from the chamber in the gas atmosphere replacement step.

5. The substrate processing method according to claim 1, characterized in that: The second liquid processing step further includes: introducing the second gas into the chamber, exhausting the second gas from the chamber, and recovering the second gas exhausted from the chamber.

6. The substrate processing method according to claim 5, characterized in that: Also includes: Before the second gas exhausted from the chamber is recovered, the second gas exhausted from the chamber is filtered.

7. The substrate processing method according to claim 5, characterized in that: The first liquid processing step further includes: introducing the first gas into the chamber and simultaneously The chamber exhausts the first gas; The gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas.

8. The substrate processing method according to claim 1, characterized in that: The first liquid is a cleaning liquid, and the second liquid is an etching liquid.

9. The substrate processing method according to claim 1, characterized in that: The first gas is an oxygen-containing gas.

10. A substrate processing device, characterized in that: include: Chamber and controller, The chamber is provided with a first air inlet pipeline, a second air inlet pipeline and an air outlet pipeline, wherein the first air inlet pipeline is used to introduce a first gas into the chamber; the second air inlet pipeline is used to introduce a second gas into the chamber, and the air outlet pipeline is used to exhaust gas from the chamber; The controller is used to control the substrate processing apparatus to perform the substrate processing method according to any one of claims 1 to 9.

11. The substrate processing apparatus according to claim 10, wherein: It also includes a recovery device connected to the gas outlet pipeline and used for accommodating the recovered second gas.

12. The substrate processing apparatus according to claim 11, characterized in that: It also includes a filtering device, which is arranged on the gas outlet pipeline and connected to the recovery device, and is used for filtering the second gas discharged from the chamber and allowing the filtered second gas to enter the recovery device.

13. The substrate processing apparatus according to claim 10, wherein: The gas outlet pipeline includes a first gas outlet pipeline and a second gas outlet pipeline, wherein the first gas outlet pipeline is used to discharge a first gas from the chamber, and the second gas outlet pipeline is used to discharge a second gas from the chamber.

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