Element, display device, electronic component, semiconductor device, and photosensitive composition

Abstract

One purpose of the present invention is to provide a display device that has excellent light emission characteristics with which low voltage driving is possible for achieving a desired current density, and that is excellent in terms of reliability of a light emitting element. Another purpose of the present invention is to provide an electronic component or a semiconductor device which has excellent migration resistance. The present invention provides an element which sequentially has a substrate, a conductive inorganic layer, and an insulating resin layer in this order, wherein: the insulating resin layer has a plurality of openings; and if (FML) counts is the detection intensity of fluorine ions (F-) as determined by time-of-flight secondary ion mass spectrometry at the position corresponding to a depth of 5 nm from the insulating resin layer-side surface of the conductive inorganic layer in each opening, formula (FA-1) is satisfied. (FA-1): (FML) ≤ 500

Description

Element, display device, electronic component, semiconductor device, and photosensitive composition

[0001] The present invention relates to an element, a display device, an electronic component, a semiconductor device, and a photosensitive composition.

[0002] In recent years, efforts have been made to reduce costs and increase integration by improving the efficiency of semiconductor manufacturing processes, and semiconductor devices that form multilayer metal rewiring have attracted attention. The interlayer insulating layer in such multilayer metal rewiring requires high electrical insulation reliability due to the miniaturization of wiring accompanying the high integration of semiconductor devices, and therefore high migration resistance is required.

[0003] Furthermore, in organic electroluminescence (hereinafter "organic EL") displays, which are display devices, pixel division layers and thin film transistor (hereinafter "TFT") planarization layers are formed adjacent to or in the vicinity of light-emitting elements, so that improving the reliability of organic EL displays requires consideration of the configuration of the pixel division layers, etc., and the physical properties (e.g., heat resistance, etc.) of the pixel division layers, etc. Additionally, in order to achieve high brightness and power saving in organic EL displays, excellent light-emitting characteristics that enable low-voltage driving to obtain the desired current density are required.

[0004] Materials used for the above-mentioned interlayer insulating layer, pixel dividing layer, etc. are also required to suppress development residues when forming a positive or negative pattern by photolithography.

[0005] Known examples of display devices include a display device having a pixel dividing layer containing polyimide (see, for example, Patent Document 1) and an organic EL display in which the total content of metal elements and / or halogen elements in a cured film is within a specific range (see, for example, Patent Document 2).

[0006] JP 2002-091343 A International Publication No. 2018 / 123853

[0007] However, the display devices described in Patent Document 1 and Patent Document 2 still have problems in terms of light-emitting characteristics related to low-voltage driving, reliability of the light-emitting elements, or migration resistance.

[0008] The present invention aims to provide a display device having excellent light-emitting characteristics that can be driven at a low voltage to obtain a desired current density, and an electronic component or semiconductor device having excellent migration resistance.

[0009] As a result of extensive research to solve the above-mentioned problems, it was found that significant effects can be obtained by focusing on the content of halogen elements on the electrode surface that becomes the opening. In particular, it was found that the above-mentioned problems can be solved by a specific configuration related to fluorine element among halogen elements, and this led to the completion of the present invention. The element of the present invention or the photosensitive composition of the present invention has the following configurations [1] to

[22] .

[0010] [1] A device having a substrate, a conductive inorganic layer, and an insulating resin layer in this order, wherein the insulating resin layer has a plurality of openings, and wherein the amount of fluorine ions (F) measured by time-of-flight secondary ion mass spectrometry at a position in the openings at a depth of 5 nm from the surface of the conductive inorganic layer on the insulating resin layer side is － ) detection strength (F ＭＬ ) counts, an element that satisfies formula (FA-1): (F ＭＬ )≦500 (FA-1).

[0011] [2] A display device comprising the element according to [1], further comprising a second electrode and a light-emitting layer, the conductive inorganic layer being a first electrode, and the insulating resin layer being a pixel dividing layer, or further comprising a first electrode, a second electrode, a pixel dividing layer, and a light-emitting layer, the insulating resin layer being a TFT planarizing layer, and the conductive inorganic layer being a metal wiring layer.

[0012] [3] The display device according to [2], wherein the first electrode is a non-transparent electrode having a multi-layer structure, and at least one of the layers other than the outermost layer on the light-emitting layer side of the first electrode has a non-transparent conductive metal layer containing silver or copper as a main element.

[0013] [4] The display device according to [2] or [3], wherein the first electrode has a transparent conductive oxide film layer and a non-transparent conductive metal layer, and the outermost layer of the first electrode on the light-emitting layer side has a transparent conductive oxide film layer containing indium as a main element.

[0014] [5] A light-emitting device having a second electrode and a light-emitting layer, wherein the conductive inorganic layer is a first electrode and the insulating resin layer is a pixel dividing layer, and wherein the amount of indium oxide ions (InO ) measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the transparent conductive oxide film layer on the side in contact with the light-emitting layer in the opening is ２ － ) is the detected intensity (InO ＭＬ ) counts, the display device according to [4], which satisfies the formula (FA-2) and the formula (InA-1): ＭＬ ) / (InO ＭＬ )≦0.5000 (FA-2) 1,000≦(InO ＭＬ )≦40,000 (InA-1).

[0015] [6] The display device according to any one of [2] to [5], wherein the pixel dividing layer has a stepped shape having a thick film portion and a thin film portion, the thick film portion and the thin film portion contain the same (XA) resin, or the thick film portion and the thin film portion contain the same (XD) colorant, and the optical density at the wavelength of visible light per 1 μm of film thickness of the thick film portion and the thin film portion is both 0.5 or more and 3.0 or less.

[0016] [7] The display device according to any one of [2] to [5], wherein the pixel dividing layer has a stepped shape having a thick film portion and a thin film portion, the thin film portion contains an (XD) colorant, and the optical density of the thin film portion at the wavelength of visible light per 1 μm of film thickness is 0.5 or more and 3.0 or less, and the thick film portion satisfies at least one of the following conditions (SP1) to (SP3): (SP1) the thick film portion does not contain an (XD) colorant; (SP2) the thick film portion contains an (XD) colorant, and the optical density of the thick film portion at the wavelength of visible light per 1 μm of film thickness is 0.0 or more and 0.3 or less; (SP3) the thick film portion contains an (XC1x) compound: one or more compounds selected from the group consisting of a carboxylic acid having an indene structure, a carboxylic acid ester having an indene structure, a sulfonic acid having an indene structure, and a sulfonic acid aryl ester having an indene structure.

[0017] [8] The amount of chloride ions (Cl) measured by time-of-flight secondary ion mass spectrometry at a position in the opening at a depth of 5 nm from the surface of the conductive inorganic layer on the insulating resin layer side. － ) is the detected intensity (Cl ＭＬ ) counts, and bromine ions (Br － ) is the detection intensity (Br ＭＬ ) counts, and sulfur ions (S － ) detection strength (S ＭＬ ) counts, the element according to [1] or the display device according to any one of [2] to [7], which satisfies at least one of formula (ClA-1), formula (BrA-1), and formula (SA-1): ＭＬ )≦200 (ClA-1) (Br ＭＬ )≦200 (BrA-1) (S ＭＬ )≦200 (SA-1).

[0018] [9] The element according to [8], or the display device according to [8], which satisfies at least one of formula (ClA-1a), formula (BrA-1a), and formula (SA-1a): 2≦(Cl ＭＬ )≦200 (ClA-1a) 2≦(Br ＭＬ )≦200 (BrA-1a) 2≦(S ＭＬ)≦200 (SA-1a).

[0019]

[10] The element according to any one of [1], [8], and [9], or the display device according to any one of [2] to [7], [8], and [9], wherein the insulating resin layer contains (XA1x) resin: a resin having one or more structures selected from the group consisting of an imide structure, an amide structure, an oxazole structure, and a siloxane structure in the structural unit of the resin, and / or (XA1y) resin: a resin having a phenolic hydroxyl group in the structural unit of the resin.

[0020]

[11] The element according to

[10] , or the display device according to

[10] , wherein the insulating resin layer contains the (XA1x) resin, and the (XA1x) resin contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, and copolymers thereof.

[0021]

[12] The element according to

[11] , or the display device according to

[11] , wherein the (XA1x) resin has an amine residue having a phenolic hydroxyl group, and the amine residue having a phenolic hydroxyl group has an amine residue that satisfies the following condition (XS1x): (XS1x) The molecular symmetry of the amine residue is C １ It has an axis of symmetry and C ２ It has no axis of symmetry.

[0022]

[13] The element according to

[11] or

[12] , or the display device according to

[11] or

[12] , wherein the (XA1x) resin has an amine residue having a phenolic hydroxyl group and an amine residue not having a phenolic hydroxyl group, and the amine residue having a phenolic hydroxyl group has an amine residue that satisfies the following condition (XS1x), and / or the amine residue not having a phenolic hydroxyl group has an amine residue that satisfies at least one of the following conditions (XS1x) and (XS2x): １ It has an axis of symmetry and C ２The amine residue, which does not have an axis of symmetry (XS2x), has at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis.

[0023]

[14] The element according to any one of [1] and [8] to

[13] , or the display device according to any one of [2] to

[13] , wherein the insulating resin layer contains a nitrogen-containing compound (XH), and the nitrogen-containing compound (XH) contains one or more compounds selected from the group consisting of a cyclic amide compound, an amide compound, a cyclic urea compound, a urea compound, an oxazolidone compound, and an isoxazolidone compound, and the element satisfies the following condition (X4): (X4) The total content of the cyclic amide compound, the amide compound, the cyclic urea compound, the urea compound, the oxazolidone compound, and the isoxazolidone compound in the insulating resin layer is 0.010 mass% or more and 5.0 mass% or less.

[0024]

[15] The element according to any one of [1] and [8] to

[14] , or the display device according to any one of [2] to

[14] , wherein the insulating resin layer contains (XC1x) compounds: one or more compounds selected from the group consisting of carboxylic acids having an indene structure, carboxylic acid esters having an indene structure, sulfonic acids having an indene structure, and sulfonic acid aryl esters having an indene structure, and / or (XC2x) compounds: compounds having a fluorene structure, a carbazole structure, an indole structure, or a diphenyl sulfide structure, and having an imino group bonded to these structures and / or having a carbonyl group bonded to these structures.

[0025]

[16] The element according to any one of [1] and [8] to

[15] , or the display device according to any one of [2] to

[15] , wherein the insulating resin layer contains an organic black pigment and / or an inorganic black pigment, the organic black pigment containing one or more selected from the group consisting of a benzofuranone-based black pigment, a perylene-based black pigment, and an azo-based black pigment, the inorganic black pigment containing one or more selected from the group consisting of a nitride containing a metal element, a carbide containing a metal element, and an oxynitride containing a metal element, and the metal element is one or more selected from the group consisting of zirconium, vanadium, niobium, hafnium, and tantalum.

[0026]

[17] The element according to any one of [1] and [8] to

[16] , or the display device according to any one of [2] to

[16] , wherein the insulating resin layer contains a compound having a quinone structure and / or a quinoid structure of a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded, or a compound having a crosslinked structure of a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded and a compound having a structure represented by formula (11):

[0027]

[0028] In formula (11), R １１ represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms; * １ and * ２ each independently represents a point of attachment, but no carbonyl group is adjacent to the nitrogen atom; a represents 1 or 2; b represents 0 or 1; and a+b=2.

[0029]

[18] An electronic component comprising the element according to any one of [1] and [8] to

[17] , or an electronic component comprising the display device according to any one of [2] to

[17] .

[0030]

[19] A semiconductor device comprising the element according to any one of [1] and [8] to

[17] , further comprising a semiconductor chip and a sealing material covering the semiconductor chip, the conductive inorganic layer being a redistribution layer, and the insulating resin layer being an interlayer insulating layer for the redistribution layer, and the area of ​​the redistribution layer being larger than the area of ​​the semiconductor chip in a planar view.

[0031]

[20] A display device comprising the element according to any one of [1] and [8] to

[17] , further comprising a light-emitting element, wherein the conductive inorganic layer is a metal wiring layer, and the insulating resin layer is a partition layer and / or a planarization layer, the light-emitting element and the metal wiring are electrically connected, the light-emitting element is a semiconductor chip, the partition layer is formed between adjacent light-emitting elements, and the planarization layer is formed so as to cover at least a part of the light-emitting element, or further comprising a light-emitting element and a metal wiring layer, the conductive inorganic layer is a rewiring layer, and the insulating resin layer is an interlayer insulating layer of the rewiring layer, the light-emitting element and the metal wiring are electrically connected, the light-emitting element is a semiconductor chip, and the area of ​​the rewiring layer is larger than the area of ​​the light-emitting element in a planar view.

[0032]

[21] A device having a substrate, a conductive inorganic layer, and an insulating resin layer in this order, wherein the insulating resin layer has a plurality of openings, and wherein the amount of fluorine ions (F) measured by time-of-flight secondary ion mass spectrometry at a position in the openings at a depth of 5 nm from the surface of the conductive inorganic layer on the insulating resin layer side is － ) detection strength (F ＭＬ ) counts, and chloride ions (Cl － ) is the detected intensity (Cl ＭＬ ) counts, and bromine ions (Br － ) is the detection intensity (Br ＭＬ ) counts, and (F ＭＬ ), (Cl ＭＬ ), and (Br ＭＬ ) is the sum of (X ＭＬ ) counts, the formula (XA-1) is satisfied, and further, the fluorine ion (F) content in the insulating resin layer portion is measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the insulating resin layer. － ) detection strength (F ＲＮ ) counts, and chloride ions (Cl － ) is the detected intensity (Cl ＲＮ ) counts, and bromine ions (Br － ) is the detection intensity (Br ＲＮ) counts, and (F ＲＮ ), (Cl ＲＮ ), and (Br ＲＮ ) is the sum of (X ＲＮ ) counts, an element that satisfies formula (XB-1): (X ＭＬ )≦500 (XA-1) (X ＲＮ )≦500 (XB-1).

[0033]

[22] A photosensitive composition comprising (A) a binder resin and (C) a photosensitizer, and further comprising (B) a radically polymerizable compound and / or (F) a crosslinking agent, wherein the (A) binder resin comprises (A1) a weakly acidic group-containing resin, and the (A1) weakly acidic group-containing resin has (WA) a weakly acidic group: one or more groups selected from the group consisting of a phenolic hydroxyl group, a hydroxyimide group, a hydroxyamide group, a silanol group, and a mercapto group, and the photosensitive composition satisfies the following condition (1a): (1a) the content of elemental fluorine in the total solid content of the photosensitive composition is 1,000 ppm by mass or less, and (3) the content of water in the photosensitive composition is 0.010% by mass or more and 3.0% by mass or less.

[0034] The element of the present invention can provide a display device having excellent light-emitting properties that allow low-voltage operation to obtain a desired current density, and excellent reliability of the light-emitting element. In addition, it can provide an electronic component or semiconductor device having excellent migration resistance. Furthermore, the photosensitive composition of the present invention can suppress residues after development, and can provide a cured product that can be used in a display device having similarly excellent light-emitting properties and excellent reliability of the light-emitting element. In addition, it can provide a cured product that can be used in an electronic component or semiconductor device having excellent migration resistance.

[0035] 1 is a schematic cross-sectional view and a plan view showing an example of a display device 100A in which a pixel division layer has a stepped shape having a thick film portion and a thin film portion; 2 is a schematic cross-sectional view showing an example of a display device 30A having an interlayer insulating layer, a partition layer, and a planarizing layer; 3 is a schematic cross-sectional view showing an example of a pad portion of a semiconductor device 10A having bumps; and 4 is a plan view showing a manufacturing process of steps 1 to 4 for a substrate of an organic EL display used in an evaluation of light-emitting characteristics.

[0036] The following describes the elements, display devices, electronic components, and semiconductor devices of the present invention. When describing the elements of the present invention, this description is common to the elements of the first and second aspects of the present invention. On the other hand, when describing an element of a specific aspect, it is referred to as the element of the first aspect of the present invention. The same applies to the descriptions of the display devices of the first, second, and third aspects. However, the present invention is not limited to the following embodiments, and various modifications are naturally possible within the scope of achieving the object of the invention and not departing from the gist of the invention.

[0037] The plane in the planar view of the element of the present invention refers to a plane parallel to the substrate described below. In the case of a display device, the planar view refers to the light extraction side of the xy-axis plane as seen from the z-axis direction, where the plane parallel to the substrate is the xy-axis plane and the direction perpendicular to the xy-axis plane is the z-axis direction. In the case of a semiconductor device, the planar view refers to the xy-axis plane as seen from either the z-axis direction, where the plane parallel to the substrate is the xy-axis plane and the direction perpendicular to the xy-axis plane is the z-axis direction. When focusing on a specific component in the planar view of the element of the present invention, the view is taken through another component overlapping the specific component. If the substrate is not flat, the xy-plane refers to a plane parallel to an arbitrary pixel unit described below, an arbitrary semiconductor chip described below, or an arbitrary light-emitting element described below. Overlapping refers to directly or indirectly overlapping in the z-axis direction.

[0038] The detection intensities of fluorine ions, chlorine ions, bromine ions, sulfur ions, indium oxide ions, carbon ions, and cyanide ions can be calculated as the average value of three measurements of time-of-flight secondary ion mass spectrometry. It is also preferable that the average values ​​of the detection intensities of each ion measured at depths of 5 nm and 6 nm from the surface of the conductive inorganic layer or the insulating resin layer (average values ​​of the detection intensities at depths of 5 nm and 6 nm) satisfy the above relationship. It is even more preferable that the average values ​​of the detection intensities of each ion measured at depths of 4 nm, 5 nm, and 6 nm from the surface of the conductive inorganic layer or the insulating resin layer (average values ​​of the detection intensities at depths of 4 nm, 5 nm, and 6 nm) satisfy the above relationship.

[0039] In the (XA) resin in the element of the present invention and the (A) binder resin in the photosensitive composition of the present invention, the amine residue refers to a structure obtained by removing a nitrogen atom and a substituent on the nitrogen atom from a structure derived from an amine in the resin or a structure derived from an amine derivative. That is, the amine residue corresponds to a structure obtained by removing a nitrogen atom and a substituent on the nitrogen atom from an amine molecule or an amine derivative molecule that is a raw material for the resin. The amine residue preferably has a divalent or higher structure, that is, a structure obtained by removing at least two nitrogen atoms and a substituent on the nitrogen atom from a structure derived from an amine in a structural unit of the resin or a structure derived from an amine derivative. It is also preferable that the amine residue have a trivalent or higher structure. Examples of such amine residues include structures obtained by removing a nitrogen atom and a substituent on the nitrogen atom from a diamine molecule, triamine molecule, diamine derivative molecule, or triamine derivative molecule that is a raw material for the resin.

[0040] In the resin (XA) in the element of the present invention and the binder resin (A) in the photosensitive composition of the present invention, the carboxylic acid residue refers to a structure obtained by removing a carbonyl group and a substituent on the carbonyl carbon atom from a structure derived from a carboxylic acid or a carboxylic acid derivative in the resin. That is, the carboxylic acid residue corresponds to a structure obtained by removing a carbonyl group and a substituent on the carbonyl carbon atom from a carboxylic acid molecule or a carboxylic acid derivative molecule, which are raw materials for the resin. The carboxylic acid residue preferably has a divalent or higher structure, i.e., a structure obtained by removing at least two carbonyl groups and a substituent on the carbonyl carbon atom from a structure derived from a carboxylic acid or a carboxylic acid derivative in the structural unit of the resin. The carboxylic acid residue preferably has a trivalent or higher structure, and more preferably a tetravalent or higher structure. Examples of such carboxylic acid residues include structures obtained by removing a carbonyl group and a substituent on the carbonyl carbon atom from a dicarboxylic acid molecule, tricarboxylic acid molecule, tetracarboxylic acid molecule, dicarboxylic acid derivative molecule, tricarboxylic acid derivative molecule, or tetracarboxylic acid derivative molecule, which are raw materials for the resin.

[0041] <Element Configuration> The element of the present invention has a substrate, a conductive inorganic layer, and an insulating resin layer in this order. The insulating resin layer has a plurality of openings. It is preferable that the surface of the conductive inorganic layer is exposed in the plurality of openings of the insulating resin layer. In plan view, it is preferable that the insulating resin layer portion has a plurality of openings, and it is preferable that the conductive inorganic layer portion is exposed in the plurality of openings.

[0042] <Substrate> The element of the present invention has a substrate.

[0043] From the viewpoint of improving impact resistance, the substrate preferably contains silicon dioxide or aluminum trioxide, and more preferably is a glass substrate, a quartz substrate, a crystal substrate, or a sapphire substrate.

[0044] From the viewpoint of controlling conductivity and insulation, the substrate preferably has silicon, silicon dioxide, trisilicon tetranitride, silicon carbide, gallium nitride, gallium arsenide, indium phosphide, indium tin oxide, indium zinc oxide, indium gallium zinc oxide, diamond, aluminum trioxide, aluminum zinc oxide, or zinc oxide, and more preferably a silicon substrate, silicon carbide substrate, gallium nitride substrate, indium phosphide substrate, indium tin oxide substrate, indium gallium zinc oxide substrate, or diamond substrate. The substrate is preferably a semiconductive substrate, and more preferably a semiconductor substrate. Semiconductivity is defined as a substrate having a volume resistivity of 1.0 × 10 －４ ~1.0 x 10 ８ This means that the resistance is Ω·cm.

[0045] The substrate is preferably a flexible substrate from the viewpoints of improving flexibility, bendability, and improving the degree of freedom in the shape of the display device (curved shape, bent shape, etc.). The flexible substrate is preferably a polyimide substrate, a polyethylene terephthalate substrate, a cycloolefin polymer substrate, a polycarbonate substrate, or a cellulose triacetate substrate, and more preferably a polyimide substrate from the viewpoint of improving bendability.

[0046] <Conductive Inorganic Layer> The element of the present invention has a conductive inorganic layer. Conductivity is defined as a layer having a volume resistivity of 1.0×10 －８ ~1.0 x 10 －４The electrical conductivity of the conductive inorganic layer is preferably Ω·cm. From the viewpoint of improving electrical conductivity, the conductive inorganic layer preferably contains a metal element as a main component, and more preferably contains Ag, Cu, Au, Ti, Al, Ni, Mo, or Cr as a main component. The main component element in the conductive inorganic layer refers to the element that is most abundant by mass among the constituent elements of the conductive inorganic layer. The conductive inorganic layer preferably further contains an element selected from In, Sn, Zn, Al, Ga, Pd, Cu, Bi, Nd, Ni, Mn, Na, K, Mg, Ca, C, and Si as an element other than the main component element. The conductive inorganic layer is preferably an electrode or wiring. The electrode is preferably an anode, a cathode, or an electrode that exhibits conductivity in response to an external stimulus. Here, examples of the external stimulus include capacitance, light, heat, or pressure. The wiring is preferably wiring for conducting electrical connections between components or between a component and an external circuit.

[0047] <Insulating Resin Layer> The element of the present invention has an insulating resin layer. Insulating means a resin layer having a volume resistivity of 1.0×10 ８ ~1.0 x 10 １８ This means that the electrical resistance is Ω·cm. From the viewpoint of improving insulation, the insulating resin layer preferably contains carbon as a main component element. The main component element in the insulating resin layer refers to the element that is contained most abundantly by mass among the constituent elements of the insulating resin layer. The insulating resin layer preferably further contains an element selected from hydrogen, oxygen, nitrogen, phosphorus, sulfur, fluorine, chlorine, and bromine as an element other than the main component element. The insulating resin layer is preferably an insulating layer, a planarizing layer, an interlayer insulating layer, a partition layer, a protective layer, or an overcoat layer. The insulating resin layer is preferably a layer for insulating members from each other or a member from an external circuit.

[0048] <Detection Intensity of Each Ion on the Surface of the Conductive Inorganic Layer and the Surface of the Insulating Resin Layer> In the element according to the first aspect of the present invention, the detection intensity of fluorine ions (F) is measured by time-of-flight secondary ion mass spectrometry at a position at a depth of 5 nm from the surface of the conductive inorganic layer on the insulating resin layer side in the opening of the insulating resin layer. － ) detection strength (F ＭＬ) counts, the formula (FA-1) is satisfied. The element according to the first aspect of the present invention preferably further satisfies the formula (FA-1a). (F ＭＬ )≦500 (FA-1) 2≦(F ＭＬ )≦500 (FA-1a).

[0049] Formula (FA-1) and formula (FA-1a) each indicate that the detection intensity of fluorine ions on the surface of the conductive inorganic layer is within a specific range.

[0050] The element according to the first aspect of the present invention is characterized in that, from the viewpoint of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting element, and improving migration resistance, the element has a structure in which the concentration of chloride ions (Cl) is measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the conductive inorganic layer on the insulating resin layer side in the opening of the insulating resin layer. － ) is the detected intensity (Cl ＭＬ ) counts, and bromine ions (Br － ) is the detection intensity (Br ＭＬ ) counts, and sulfur ions (S － ) detection strength (S ＭＬ ) counts, it is preferable that at least one of formula (ClA-1), formula (BrA-1), and formula (SA-1) is satisfied, and it is more preferable that at least one of formula (ClA-1a), formula (BrA-1a), and formula (SA-1a) is satisfied.

[0051] From the viewpoint of the effects of the invention described above, the element according to the first aspect of the present invention more preferably satisfies formula (SA-1), further preferably satisfies formula (SA-1) and formula (ClA-1) and / or formula (BrA-1), and particularly preferably satisfies formula (SA-1), formula (ClA-1), and formula (BrA-1). ＭＬ )≦200 (ClA-1) (Br ＭＬ )≦200 (BrA-1) (S ＭＬ )≦200 (SA-1) 2≦(Cl ＭＬ )≦200 (ClA-1a) 2≦(Br ＭＬ )≦200 (BrA-1a) 2≦(S ＭＬ)≦200 (SA-1a).

[0052] Formula (ClA-1), Formula (ClA-1a), Formula (BrA-1), Formula (BrA-1a), Formula (SA-1), and Formula (SA-1a) are formulas that indicate that the detection intensity of chloride ions, bromine ions, or sulfur ions on the surface of a conductive inorganic layer is within a specific range.

[0053] (F ＭＬ From the viewpoint of the effects of the present invention, (F) is preferably 0 or more, more preferably 2 or more, even more preferably 4 or more, even more preferably 6 or more, particularly preferably 8 or more, and most preferably 10 or more. ＭＬ From the viewpoint of the effects of the present invention, (F) is preferably 500 or less, more preferably 300 or less, even more preferably 200 or less, even more preferably 150 or less, and particularly preferably 120 or less. ＭＬ ) is preferably 100 or less, more preferably 80 or less, even more preferably 60 or less, even more preferably 40 or less, particularly preferably 30 or less, and most preferably 25 or less.

[0054] (Cl ＭＬ From the viewpoint of the effects of the present invention, (Cl) is preferably 0 or more, more preferably 2 or more, even more preferably 4 or more, even more preferably 6 or more, particularly preferably 8 or more, and most preferably 10 or more. ＭＬ From the viewpoint of the effects of the present invention, (Cl) is preferably 200 or less, more preferably 170 or less, even more preferably 150 or less, even more preferably 120 or less, and particularly preferably 100 or less. ＭＬ ) is preferably 80 or less, more preferably 60 or less, even more preferably 40 or less, even more preferably 30 or less, and particularly preferably 25 or less.

[0055] (Br ＭＬ ) and (S ＭＬ The preferred ranges of (Cl) are also the same as those described above. ＭＬ ) is the same as the preferred range of

[0056] By adopting the above configuration, the element according to the first aspect of the present invention can provide a display device having excellent light-emitting properties that enable low-voltage operation to obtain a desired current density, as well as excellent reliability of the light-emitting element. In addition, it is possible to provide an electronic component or semiconductor device having excellent migration resistance. In the opening of the insulating resin layer, the detection intensity of fluorine ions on the surface of the conductive inorganic layer on the insulating resin layer side being below a specific value indicates that the proportion of the surface of the conductive inorganic layer that has been surface-modified by elemental fluorine falls within a specific range. For example, when the conductive inorganic layer is an electrode in a display device, adjusting the work function difference is thought to achieve excellent light-emitting properties that enable low-voltage operation, and also to achieve high light-emitting brightness when driven at the same voltage. Furthermore, when the conductive inorganic layer is metal wiring in a display device, the conductivity of the surface-modified metal wiring is controlled, enabling low-voltage operation, and thus achieving high light-emitting brightness.

[0057] Furthermore, intentionally adjusting the detection intensity of fluorine ions on the conductive inorganic layer is believed to control the polarization structure and charge balance on the electrode, for example, when the conductive inorganic layer is an electrode of a display device. This is believed to suppress ion migration and electromigration caused by metal impurities and ionic impurities that adversely affect light-emitting characteristics, thereby contributing to the high reliability of the light-emitting element. Similarly, controlling the polarization structure and charge balance on the metal wiring or rewiring of a display device, electronic component, or semiconductor device is believed to suppress ion migration and electromigration caused by metal impurities and ionic impurities that adversely affect electrical characteristics, thereby contributing to the high migration resistance. Furthermore, suppressing migration and aggregation of metals in the electrode or metal wiring is believed to contribute to the high reliability of the display device, electronic component, or semiconductor device.

[0058] The element according to the second aspect of the present invention has a fluorine ion (F) concentration measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the conductive inorganic layer on the insulating resin layer side in the opening of the insulating resin layer.－ ) detection strength (F ＭＬ ) counts, and chloride ions (Cl － ) is the detected intensity (Cl ＭＬ ) counts, and bromine ions (Br － ) is the detection intensity (Br ＭＬ ) counts, and (F ＭＬ ), (Cl ＭＬ ), and (Br ＭＬ ) is the sum of (X ＭＬ ) counts, the formula (XA-1) is satisfied, and further, the fluorine ion (F) content measured by time-of-flight secondary ion mass spectrometry at a position in the insulating resin layer portion at a depth of 5 nm from the surface of the insulating resin layer is － ) detection strength (F ＲＮ ) counts, and chloride ions (Cl － ) is the detected intensity (Cl ＲＮ ) counts, and bromine ions (Br － ) is the detection intensity (Br ＲＮ ) counts, and (F ＲＮ ), (Cl ＲＮ ), and (Br ＲＮ ) is the sum of (X ＲＮ ) counts, the formula (XB-1) is satisfied. The element according to the second aspect of the present invention preferably further satisfies the formulas (XA-1a) and (XB-1a). (X ＭＬ )≦500 (XA-1) (X ＲＮ )≦500 (XB-1) 2≦(X ＭＬ )≦500 (XA-1a) 2≦(X ＲＮ )≦500 (XB-1a).

[0059] Formula (XA-1) and Formula (XA-1a) are formulas showing that the sum of the detection intensities of fluorine ions, chloride ions, and bromine ions on the surface of the conductive inorganic layer is within a specific range. Formula (XB-1) and Formula (XB-1a) are formulas showing that the sum of the detection intensities of fluorine ions, chloride ions, and bromine ions on the surface of the insulating resin layer is within a specific range.

[0060] In the element according to the second aspect of the present invention, from the viewpoint of achieving low-voltage driving of light-emitting characteristics, improving reliability of the light-emitting element, and improving migration resistance, the element has a structure in which the concentration of sulfur ions (S) is measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the conductive inorganic layer on the insulating resin layer side in the opening of the insulating resin layer. － ) detection strength (S ＭＬ ) counts, the formula (SA-1) is satisfied, and further, the concentration of sulfur ions (S － ) detection strength (S ＲＮ ) counts, it is preferable that the formula (SB-1) is satisfied. From the viewpoint of the effects of the invention described above, it is more preferable that the element according to the second aspect of the present invention further satisfies the formulas (SA-1a) and (SB-1a). (S ＭＬ )≦200 (SA-1) (S ＲＮ )≦200 (SB-1) 2≦(S ＭＬ )≦200 (SA-1a) 2≦(S ＲＮ )≦200 (SB-1a).

[0061] Formula (SB-1) and formula (SB-1a) each indicate that the detection intensity of sulfur ions on the surface of the insulating resin layer is within a specific range.

[0062] (X ＭＬ From the viewpoint of the effects of the present invention, (X) is preferably 0 or more, more preferably 2 or more, even more preferably 4 or more, even more preferably 6 or more, particularly preferably 8 or more, and most preferably 10 or more. ＭＬ From the viewpoint of the effects of the present invention, (X) is preferably 500 or less, more preferably 300 or less, even more preferably 200 or less, even more preferably 150 or less, and particularly preferably 120 or less. ＭＬ ) is preferably 100 or less, more preferably 80 or less, even more preferably 60 or less, even more preferably 40 or less, particularly preferably 30 or less, and most preferably 25 or less.

[0063] (F ＭＬ), (Cl ＭＬ ), (Br ＭＬ ), and (S ＭＬ The preferred ranges of the respective elements are the same as those described above in the element according to the first aspect of the present invention.

[0064] (X ＲＮ From the viewpoint of the effects of the present invention, (X) is preferably 0 or more, more preferably 2 or more, even more preferably 4 or more, even more preferably 6 or more, particularly preferably 8 or more, and most preferably 10 or more. ＲＮ From the viewpoint of the effects of the present invention, (X) is preferably 500 or less, more preferably 300 or less, even more preferably 200 or less, even more preferably 150 or less, and particularly preferably 120 or less. ＲＮ ) is preferably 100 or less, more preferably 80 or less, even more preferably 60 or less, even more preferably 40 or less, particularly preferably 30 or less, and most preferably 25 or less.

[0065] (F ＲＮ From the viewpoint of the effects of the present invention, (F) is preferably 0 or more, more preferably 2 or more, even more preferably 4 or more, even more preferably 6 or more, particularly preferably 8 or more, and most preferably 10 or more. ＲＮ From the viewpoint of the effects of the present invention, (F) is preferably 500 or less, more preferably 300 or less, even more preferably 200 or less, even more preferably 150 or less, and particularly preferably 120 or less. ＲＮ ) is preferably 100 or less, more preferably 80 or less, even more preferably 60 or less, even more preferably 40 or less, particularly preferably 30 or less, and most preferably 25 or less.

[0066] (Cl ＲＮ From the viewpoint of the effects of the present invention, (Cl) is preferably 0 or more, more preferably 2 or more, even more preferably 4 or more, even more preferably 6 or more, particularly preferably 8 or more, and most preferably 10 or more. ＲＮ From the viewpoint of the effects of the present invention, (Cl) is preferably 200 or less, more preferably 170 or less, even more preferably 150 or less, even more preferably 120 or less, and particularly preferably 100 or less.ＲＮ ) is preferably 80 or less, more preferably 60 or less, even more preferably 40 or less, even more preferably 30 or less, and particularly preferably 25 or less.

[0067] (Br ＲＮ ) and (S ＲＮ The preferred ranges of (Cl) are also the same as those described above. ＲＮ ) is the same as the preferred range of

[0068] By adopting the above configuration, the element according to the second aspect of the present invention can provide a display device having excellent light-emitting characteristics that can be driven at a low voltage to obtain a desired current density, as well as excellent reliability of the light-emitting element. In addition, an electronic component or semiconductor device having excellent migration resistance can be provided. In the opening of the insulating resin layer, the sum of the detection intensities of fluorine ions, chloride ions, and bromine ions on the surface of the conductive inorganic layer on the insulating resin layer side being below a specific value indicates that the proportion of the surface of the conductive inorganic layer modified by these elements is within a specific range. In other words, even when fluorine ions are not detected on the surface of the conductive inorganic layer, the effects of the present invention can be achieved by configuring the detection intensities of chloride ions and bromine ions. Furthermore, by intentionally adjusting the detection intensities of these ions on the conductive inorganic layer, for example, when the conductive inorganic layer is an electrode of a display device, it is believed that the polarization structure and charge balance on the electrode can be controlled. Therefore, similar to the element according to the first aspect, it is believed that the polarization structure and charge balance on the metal wiring or rewiring of a display device, electronic component, or semiconductor device can be controlled. As a result, the effects of the above invention can be achieved.

[0069] Furthermore, in an insulating resin layer, the sum of the detection intensities of fluorine ions, chlorine ions, and bromine ions on the surface of the insulating resin layer being below a specific value indicates that the abundance ratio of these elements on the surface of the insulating resin layer is within a specific range. In other words, even when fluorine ions are not detected on the surface of the insulating resin layer, the effects of the present invention can be achieved by configuring the detection intensities of chlorine ions and bromine ions. It is also possible that these elements on the surface of the insulating resin layer migrate to the surface of the conductive inorganic layer on the insulating resin layer side at the opening of the insulating resin layer, thereby modifying the surface of the conductive inorganic layer with these elements. As a result, for example, when the conductive inorganic layer is an electrode or metal wiring in a display device, the conductivity of the surface-modified electrode or metal wiring is controlled, resulting in excellent light-emitting characteristics and high light-emitting brightness that enable low-voltage operation. Furthermore, intentionally adjusting the detection intensities of these ions on the insulating resin layer is thought to control the polarization structure and charge balance in the insulating resin layer of, for example, a display device, electronic component, or semiconductor device. As a result, ion migration and electromigration caused by metallic impurities and ionic impurities that adversely affect light-emitting properties or electrical insulation are suppressed, which is presumed to contribute to high reliability and excellent migration resistance of light-emitting elements.Furthermore, the suppression of migration and aggregation of metals in electrodes or metal wiring is presumed to contribute to high reliability of display devices, electronic components, and semiconductor devices.

[0070] The surface of the conductive inorganic layer on the insulating resin layer side of the element of the present invention can be determined by depth measurement using time-of-flight secondary ion mass spectrometry. First, etching ion species accelerated by applying a bias are collided with the opening of the insulating resin layer from the insulating resin layer side, and while etching in the depth direction from the conductive inorganic layer side toward the substrate side, primary ion species accelerated by applying a bias are collided from the insulating resin layer side. The secondary ions emitted during this process are measured, and a depth profile in the depth direction from the conductive inorganic layer side toward the substrate side is measured. In the depth profile, the point where the detection intensity of at least one ion among the elements contained in the outermost layer of the conductive inorganic layer on the insulating resin layer side is 100 or more is defined as the surface of the conductive inorganic layer. In addition, the depth profile in the depth direction from the conductive inorganic layer side toward the substrate side is measured from the surface of the conductive inorganic layer to the surface opposite the substrate side, and the thickness of the conductive inorganic layer is measured. The sputtering rate of the conductive inorganic layer is calculated from these values, and the position 5 nm deep from the surface of the conductive inorganic layer in the depth profile can be determined.

[0071] Using a similar method, the surface of the insulating resin layer can also be determined by depth measurement using time-of-flight secondary ion mass spectrometry. In the depth profile, the point at which the detection intensity of at least one ion among the elements contained in the outermost layer of the insulating resin layer is 100 or more is defined as the surface of the insulating resin layer. Furthermore, by measuring the depth profile in the depth direction from the insulating resin layer side to the substrate side from the surface of the insulating resin layer to the surface opposite the substrate side and measuring the thickness of the insulating resin layer, and calculating the sputtering rate of the insulating resin layer from these values, the position at a depth of 5 nm from the surface of the insulating resin layer in the depth profile can be determined.

[0072] Using a similar method, the surface of a transparent conductive oxide film layer containing indium as a primary element, which is in contact with the light-emitting layer in the display device of the present invention described below, can also be determined by depth measurement using time-of-flight secondary ion mass spectrometry. In the depth profile, the point at which the detection intensity of indium oxide ions reaches 100 or more is defined as the surface of the transparent conductive oxide film layer containing indium as a primary element. Furthermore, by measuring the depth profile in the depth direction from the light-emitting layer side toward the substrate side from the surface of the transparent conductive oxide film layer to the surface opposite the substrate side and measuring the thickness of the transparent conductive oxide film layer, and calculating the sputtering rate of the transparent conductive oxide film layer from these values, the position 5 nm deep from the surface of the transparent conductive oxide film layer containing indium as a primary element in the depth profile can be determined.

[0073] In the depth profile, the point where the detection intensity of at least one ion among the elements contained in the layer located directly below the first electrode or the layer located directly below the transparent conductive oxide film layer is 100 or more is defined as the surface opposite the substrate side of the first electrode or the surface opposite the substrate side of the transparent conductive oxide film layer.

[0074] The thickness of the first electrode and the transparent conductive oxide film layer can be measured using a TEM or SEM. The thickness of the first electrode and the transparent conductive oxide film layer can also be determined by the following method: The first electrode or the transparent conductive oxide film layer is subjected to elemental composition analysis, and a metal film or oxide film having the same elemental composition as the analyzed film is deposited to the desired thickness. The resulting metal film or oxide film is then subjected to depth measurement using time-of-flight secondary ion mass spectrometry to measure the depth profile in the depth direction from the surface of the metal film or oxide film to the surface opposite the substrate, and the sputtering rate of the metal film or oxide film is calculated from the thickness of the metal film or oxide film. Methods for elemental composition analysis include, for example, Rutherford backscattering spectrometry and other analytical techniques.

[0075] <Display Device> The display device of the present invention comprises the element of the present invention. Note that a first aspect of the display device of the present invention is a display device comprising the element of the first aspect of the present invention, further comprising a second electrode and a light-emitting layer, the conductive inorganic layer being the first electrode, and the insulating resin layer being a pixel dividing layer, or further comprising a first electrode, a second electrode, a pixel dividing layer, and a light-emitting layer, the insulating resin layer being a TFT planarizing layer, and the conductive inorganic layer being a metal wiring layer. Furthermore, a second aspect of the display device of the present invention is a display device comprising the element of the second aspect of the present invention, further comprising a second electrode and a light-emitting layer, the conductive inorganic layer being the first electrode, and the insulating resin layer being a pixel dividing layer, or further comprising a first electrode, a second electrode, a pixel dividing layer, and a light-emitting layer, the insulating resin layer being a TFT planarizing layer, and the conductive inorganic layer being a metal wiring layer.

[0076] The display device is preferably a flexible display device, and more preferably has a curved display portion, a display portion including an outwardly bent surface, or a display portion including an inwardly bent surface. The display device is preferably an organic electroluminescence (EL) display, a quantum dot display, a micro light-emitting diode (hereinafter referred to as "LED") display, a mini LED display, or a liquid crystal display.

[0077] <Configuration of Display Device> The display device of the present invention preferably has a first electrode, a second electrode, a pixel division layer, and a light-emitting layer on the same substrate. Furthermore, from the viewpoint of suppressing external light reflection and improving luminance, it is preferable to further have at least one of a linear polarizer, a quarter-wave plate, and a circular polarizer, or a color filter layer and a black matrix layer. The display device of the present invention preferably has a first electrode, a second electrode, a pixel division layer, a light-emitting layer, a sealing layer, a color filter layer, and a black matrix layer on the same substrate, and more preferably has a first electrode, a second electrode, a pixel division layer, a light-emitting layer, a TFT planarization layer, a metal wiring layer, a sealing layer, a color filter layer, and a black matrix layer on the same substrate. The display device of the present invention preferably has a first electrode, a light-emitting layer, a second electrode, a sealing layer, and a color filter layer formed in this order in a superimposed manner, and it is preferable to have a metal wiring layer, a TFT planarization layer, a first electrode, a light-emitting layer, a second electrode, a sealing layer, and a color filter layer formed in this order in a superimposed manner. When these layers are formed on the same substrate, the display device of the present invention can suppress, for example, poor light emission caused by poor positional accuracy between the pixel section and the color filter layer section, exposure alignment errors, etc., thereby significantly suppressing a decrease in panel yield and improving the reliability of the light-emitting elements.

[0078] In the display device of the present invention, the pixel dividing layer preferably has a plurality of openings. The display device of the present invention preferably has a plurality of pixel portions in a planar view. In a planar view, the pixel portion is preferably a portion on the first electrode portion in the opening of the pixel dividing layer portion and where the light-emitting layer is formed. The TFT planarizing layer also preferably has a plurality of openings. The surface of the metal wiring layer is preferably exposed in the plurality of openings of the TFT planarizing layer.

[0079] The display device of the present invention preferably includes the element of the present invention, and further includes a second electrode and a light-emitting layer, the conductive inorganic layer in the element being the first electrode, and the insulating resin layer in the element being the pixel dividing layer. Also preferably, the display device of the present invention includes the element of the present invention, and further includes a first electrode, a second electrode, a pixel dividing layer, and a light-emitting layer, the insulating resin layer in the element being the TFT planarizing layer, and the conductive inorganic layer in the element being the metal wiring layer.

[0080] <First Electrode and Second Electrode> The display device of the present invention preferably has a first electrode and a second electrode. The electrodes are required to have excellent electrical properties. When the electrode is used as an anode, it is required to have complex properties such as being able to efficiently inject holes, and when used as a cathode, it is required to be able to efficiently inject electrons. In the display device of the present invention, it is preferable that the first electrode is an anode and the second electrode is a cathode.

[0081] By using a combination of a transparent electrode and a non-transparent electrode as the first electrode and the second electrode, light emitted from a light-emitting layer (described later) can be extracted to one side.

[0082] A display device with a bottom-emission configuration has a transparent electrode as the first electrode and a non-transparent electrode as the second electrode. On the other hand, a display device with a top-emission configuration has a non-transparent electrode as the first electrode and a transparent electrode as the second electrode. A transparent electrode refers to an electrode having a light transmittance of 30% or more at a wavelength of 550 nm, and a non-transparent electrode refers to an electrode having a light transmittance of less than 30% at a wavelength of 550 nm. It is preferable to adjust the transmittance at a wavelength of 550 nm by adjusting the film thickness of the electrode. In order to achieve multiple properties, it is also preferable to use a non-transparent electrode with a multilayer structure as the first electrode. For example, the first electrode can be a non-transparent electrode with a multilayer structure, and the substrate side of the first electrode can be provided with an underlayer that improves adhesion and corrosion resistance, or a reflection adjustment layer that adjusts reflectance. When the electrode has a single-layer structure, the terms "transparent" and "non-transparent" in the transparent conductive oxide film layer, non-transparent conductive layer, non-transparent conductive metal layer, transparent conductive layer, and transparent conductive metal layer described below refer to a transmittance of 30% or more or less than 30% at a wavelength of 550 nm, as described above. On the other hand, when the electrode has a multilayer structure, "transparent" refers to an overall transmittance of 30% or more at a wavelength of 550 nm, and "non-transparent" refers to a transmittance of less than 30% for any one layer constituting the multilayer structure. In other words, when the multilayer structure has at least one non-transparent conductive layer or non-transparent conductive metal layer, the electrode having the multilayer structure is a non-transparent electrode.

[0083] The transmittance of the first electrode and the second electrode can be determined by separating the first electrode or the second electrode from the display device and measuring the first electrode or the second electrode with a single beam using an UV-visible spectrophotometer. If it is difficult to separate the first electrode or the second electrode from the display device, the transmittance of the first electrode and the second electrode can be determined by the following method. First, the first electrode or the second electrode and at least one layer, including a layer in contact with the first electrode or the second electrode, are separated from the display device to obtain a measurement sample A. Measurement sample A is measured with a single beam using an UV-visible spectrophotometer to obtain a UV-visible absorption spectrum A. Next, the first electrode or the second electrode is separated or dissolved from measurement sample A to obtain a measurement sample B. Measurement sample B is measured with a single beam using an UV-visible spectrophotometer to obtain a UV-visible absorption spectrum B. The transmittance of the first electrode or the second electrode is calculated from the difference between the obtained UV-visible absorption spectrum A and the UV-visible absorption spectrum B. The first electrode, the second electrode, etc. may be separated or dissolved by a physical method, an optical method, or a chemical method, such as a method of separating by applying an external force, a method of separating by irradiating with a laser or an ion beam, or a method of dissolving using a chemical solution.

[0084] The display device of the present invention preferably has a plurality of first electrode portions in plan view. The above-mentioned first electrode in plan view corresponds to the first electrode portion. The display device of the present invention preferably has a second electrode portion in plan view. The above-mentioned second electrode in plan view corresponds to the second electrode portion. It is more preferable that the display device of the present invention has a plurality of second electrode portions.

[0085] <Transparent Conductive Oxide Film Layer, Non-Transparent Conductive Metal Layer, and Transparent Conductive Metal Layer> The first electrode has a single-layer structure or a multi-layer structure. When the first electrode has a multi-layer structure, the first electrode is a transparent electrode or a non-transparent electrode.

[0086] When the first electrode has a single-layer structure, the first electrode is preferably a transparent electrode. When the first electrode has a multilayer structure, the outermost layer on the light-emitting layer side of the first electrode preferably has a transparent conductive oxide film layer, more preferably a transparent conductive oxide film layer containing In, Sn, Zn, Al, or Ga as a main element, and even more preferably a transparent conductive oxide film layer containing indium as a main element. The main element in the transparent conductive oxide film layer refers to the element other than oxygen that is most abundant by mass among the constituent elements of the transparent conductive oxide film layer. From the viewpoints of low-voltage driving of light-emitting characteristics and improved light-emitting brightness, the transparent conductive oxide film layer is preferably indium tin oxide (hereinafter referred to as ITO) or indium zinc oxide (IZO), and ITO is more preferred. From the viewpoints of low-voltage driving of light-emitting characteristics, improved light-emitting brightness, and improved reliability of the light-emitting device, the transparent conductive oxide film layer is preferably an amorphous transparent conductive oxide film layer. On the other hand, from the viewpoint of improved reliability of the light-emitting device, the transparent conductive oxide film layer is preferably a polycrystalline transparent conductive oxide film layer.

[0087] When the first electrode is used as an anode, the first electrode is preferably made of ITO or IZO, more preferably ITO, from the viewpoints of achieving low-voltage driving of light-emitting characteristics and improving light-emitting brightness. When the first electrode is a transparent electrode, it is preferable to adjust the transmittance at a wavelength of 550 nm by adjusting the film thickness of the first electrode.

[0088] When the first electrode is a multilayer non-transparent electrode, the first electrode has a non-transparent conductive layer. The non-transparent conductive layer is preferably a non-transparent conductive metal layer containing a metal element. Furthermore, when the first electrode is used as an anode, the non-transparent conductive metal layer preferably contains Ag, Cu, Au, Ti, Al, Ni, Mo, or Cr as a main component element, more preferably Ag, Cu, Au, Ti, or Al as a main component element, and even more preferably silver or copper as a main component element, from the viewpoints of low-voltage operation of the light-emitting characteristics, improved light-emitting brightness, improved reliability of the light-emitting device, and improved corrosion resistance. The main component element in the non-transparent conductive metal layer refers to the element that is most abundant by mass among the constituent elements of the non-transparent conductive metal layer. The non-transparent conductive metal layer is preferably present in at least one of the layers other than the outermost layer on the light-emitting layer side of the first electrode.

[0089] When the second electrode has a single layer structure, the second electrode is preferably a transparent electrode. When the second electrode has a multilayer structure, the outermost layer on the light-emitting layer side of the second electrode preferably has a transparent conductive metal layer, more preferably a transparent conductive metal layer containing Li, Mg, Ag, Cu, Au, Ti, or Al as a main component element, and even more preferably a transparent conductive metal layer containing magnesium or silver as a main component element. The main component element in the transparent conductive metal layer refers to the element that is most abundant in the constituent elements of the transparent conductive metal layer on a mass basis. From the viewpoint of improving luminance, the transparent conductive metal layer is preferably LiAg or MgAg, and more preferably MgAg.

[0090] From the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving light-emitting brightness, improving reliability of the light-emitting element, and improving corrosion resistance, it is preferable that the display device of the present invention has a first electrode that is a non-transparent electrode with a multilayer structure, and that at least one of the layers other than the outermost layer on the light-emitting layer side of the first electrode has a non-transparent conductive metal layer containing silver or copper as a main element.

[0091] When the display device of the present invention has the above configuration, from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving light-emitting brightness, and improving the reliability of the light-emitting element, it is preferable that the first electrode has a transparent conductive oxide film layer and a non-transparent conductive metal layer, and that the outermost layer of the first electrode on the light-emitting layer side has a transparent conductive oxide film layer containing indium as a main element.

[0092] In the above configuration, the transparent conductive oxide film layer containing indium as a primary element is preferably amorphous or polycrystalline, and amorphous is preferred. The amorphous transparent conductive oxide film layer is believed to suppress the occurrence of defects and protrusions on the surface of the first electrode, thereby significantly improving the reliability of the light-emitting device. Furthermore, the amorphous transparent conductive oxide film layer is likely to undergo surface modification, which is believed to significantly improve the light-emitting characteristics, allowing for lower drive voltages and improving luminance by adjusting the work function difference. The non-transparent conductive metal layer containing silver or copper as a primary element is believed to significantly improve the light extraction efficiency due to the high reflectivity of these metals, thereby significantly improving luminance. Furthermore, the low resistivity of these metals is believed to improve conductivity, thereby significantly improving the light-emitting characteristics, allowing for lower drive voltages and improving luminance. Due to these effects, the above configuration is particularly suitable for display devices with a top-emission configuration.

[0093] <Detection Intensity of Each Ion on the Surface of the First Electrode, the Surface of the Pixel Dividing Layer, the Surface of the Metal Wiring Layer, and the Surface of the TFT Planarizing Layer> In the display device that is the first aspect of the present invention, it is preferable that the following (I-D1) or (II-D1) satisfies the above formula (FA-1), and it is more preferable that it satisfies the above formula (FA-1a).

[0094] Furthermore, it is preferable that the following (I-D1) or (II-D1) satisfies at least one of the above formula (ClA-1), the above formula (BrA-1), and the above formula (SA-1), and it is more preferable that the following (I-D1) satisfies at least one of the above formula (ClA-1a), the above formula (BrA-1a), and the above formula (SA-1a).

[0095] Furthermore, it is more preferable that the following (I-D1) or (II-D1) satisfies the above formula (SA-1), it is even more preferable that the following (SA-1) and the above formula (ClA-1) and / or the above formula (BrA-1) are satisfied, and it is particularly preferable that the following formulas (SA-1), (ClA-1), and (BrA-1) are satisfied. (I-D1) The detection intensities of fluorine ions, chloride ions, bromine ions, and sulfur ions are measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the first electrode on the side in contact with the light-emitting layer in the opening of the pixel dividing layer. (II-D1) The detection intensities of fluorine ions, chloride ions, bromine ions, and sulfur ions are measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the metal wiring layer on the TFT planarizing layer side in the opening of the TFT planarizing layer.

[0096] In the display device according to the second aspect of the present invention, when the above (I-D1) satisfies the above formulae in the display device according to the first aspect, it is preferable that the following (I-D2) satisfies the above formulae (XA-1) and (XB-1), and more preferably satisfies the above formulae (XA-1a) and (XB-1a).

[0097] In a display device according to a second aspect of the present invention, when the above (II-D1) satisfies the above formulas in the display device according to the first aspect, the following (II-D2) preferably satisfies the above formulas (XA-1) and (XB-1), and more preferably satisfies the above formulas (XA-1a) and (XB-1a). (I-D2) In a pixel dividing layer portion, the sum of the detection intensities of fluorine ions, chlorine ions, and bromine ions, and the detection intensity of sulfur ions, measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the pixel dividing layer. (II-D2) In a TFT planarizing layer portion, the sum of the detection intensities of fluorine ions, chlorine ions, and bromine ions, and the detection intensity of sulfur ions, measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the TFT planarizing layer.

[0098] <Detection Intensity of Indium Oxide Ions on the Surface of the First Electrode> From the viewpoint of achieving low-voltage driving of light-emitting characteristics, improving the reliability of light-emitting elements, and improving migration resistance, the display device according to the first aspect of the present invention has a second electrode and a light-emitting layer, the conductive inorganic layer is the first electrode, the insulating resin layer is the pixel dividing layer, and the outermost layer of the first electrode on the light-emitting layer side has a transparent conductive oxide film layer containing indium as a main element, and the display device according to the first aspect of the present invention has a detection intensity of indium oxide ions (InO ) measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the transparent conductive oxide film layer on the side in contact with the light-emitting layer in the opening of the pixel dividing layer. ２ － ) is the detected intensity (InO ＭＬ ) counts, it is preferable that the formula (FA-2) and the formula (InA-1) are satisfied, and it is more preferable that the formula (FA-2a) and the formula (InA-1) are satisfied. ＭＬ ) / (InO ＭＬ )≦0.5000 (FA-2) 1,000≦(InO ＭＬ )≦40,000 (InA-1) 0.0001≦(F ＭＬ ) / (InO ＭＬ )≦0.5000 (FA-2a).

[0099] In the above configuration, the display device according to the first aspect of the present invention has a transparent conductive oxide film layer containing indium as a main component element and having a thickness of 5 nm or more, as the outermost layer of the first electrode on the light-emitting layer side in the pixel section. Formula (InA-1) is a formula indicating that the detection intensity of indium oxide ions on the surface of the transparent conductive oxide film layer is within a specific range. In the pixel section, a higher detection intensity of indium oxide ions on the surface of the transparent conductive oxide film on the side in contact with the light-emitting layer indicates a higher proportion of the surface of the transparent conductive oxide film layer containing indium as a main component element that is exposed.

[0100] From the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting element, and improving migration resistance, the display device that is the first aspect of the present invention preferably satisfies the above formula (FA-2) and formula (InA-1), and further satisfies at least one of formulas (ClA-2), (BrA-2), and (SA-2), and more preferably satisfies at least one of formulas (ClA-2a), (BrA-2a), and (SA-2a).

[0101] From the viewpoint of the effects of the invention described above, the display device according to the first aspect of the present invention more preferably satisfies formula (SA-2), further preferably satisfies formula (SA-2) and formula (ClA-2) and / or formula (BrA-2), and particularly preferably satisfies formula (SA-2), formula (ClA-2), and formula (BrA-2). ＭＬ ) / (InO ＭＬ )≦0.2000 (ClA-2) (Br ＭＬ ) / (InO ＭＬ )≦0.2000 (BrA-2) (S ＭＬ ) / (InO ＭＬ )≦0.2000 (SA-2) 0.0001≦(Cl ＭＬ ) / (InO ＭＬ )≦0.2000 (ClA-2a) 0.0001≦(Br ＭＬ ) / (InO ＭＬ )≦0.2000 (BrA-2a) 0.0001≦(S ＭＬ ) / (InO ＭＬ )≦0.2000 (SA-2a).

[0102] (InO ＭＬ From the viewpoint of the effects of the present invention, (InO) is more preferably 1,500 or more, and even more preferably 2,000 or more. ＭＬ From the viewpoint of the effects of the present invention, (InO) is preferably 30,000 or less, more preferably 20,000 or less, even more preferably 15,000 or less, and particularly preferably 10,000 or less. ＭＬ ) is preferably 7,500 or less, more preferably 6,000 or less, even more preferably 5,000 or less, even more preferably 4,000 or less, and particularly preferably 3,500 or less.

[0103] (F ＭＬ ) / (InO ＭＬ From the viewpoint of the effects of the present invention, (F) is preferably 0 or more, more preferably 0.0001 or more, even more preferably 0.0003 or more, even more preferably 0.0005 or more, and particularly preferably 0.0010 or more. ＭＬ ) / (InO ＭＬ ) is preferably 0.0020 or more, more preferably 0.0040 or more, even more preferably 0.0060 or more, even more preferably 0.0080 or more, and particularly preferably 0.0100 or more. ＭＬ ) / (InO ＭＬ From the viewpoint of the effects of the present invention, (F) is preferably 0.5000 or less, more preferably 0.3000 or less, even more preferably 0.2000 or less, even more preferably 0.1500 or less, and particularly preferably 0.1200 or less. ＭＬ ) / (InO ＭＬ ) is preferably 0.1000 or less, more preferably 0.0800 or less, even more preferably 0.0600 or less, even more preferably 0.0400 or less, particularly preferably 0.0300 or less, and most preferably 0.0250 or less.

[0104] (Cl ＭＬ ) / (InO ＭＬ From the viewpoint of the effects of the present invention, (Cl) is preferably 0 or more, more preferably 0.0001 or more, even more preferably 0.0003 or more, even more preferably 0.0005 or more, and particularly preferably 0.0010 or more. ＭＬ ) / (InO ＭＬ ) is preferably 0.0020 or more, more preferably 0.0040 or more, even more preferably 0.0060 or more, even more preferably 0.0080 or more, and particularly preferably 0.0100 or more. ＭＬ ) / (InO ＭＬ From the viewpoint of the effects of the present invention, (Cl) is preferably 0.2000 or less, more preferably 0.1700 or less, even more preferably 0.1500 or less, and particularly preferably 0.1200 or less. ＭＬ ) / (InO ＭＬ) is preferably 0.1000 or less, more preferably 0.0800 or less, even more preferably 0.0600 or less, even more preferably 0.0400 or less, particularly preferably 0.0300 or less, and most preferably 0.0250 or less.

[0105] (Br ＭＬ ) / (InO ＭＬ ) and (S ＭＬ ) / (InO ＭＬ The preferred ranges of (Cl) are also the same as those described above. ＭＬ ) / (InO ＭＬ ) is the same as the preferred range of

[0106] A display device according to a second aspect of the present invention has a second electrode and a light-emitting layer, and is configured from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting element, and improving migration resistance. The display device has a conductive inorganic layer as a first electrode, an insulating resin layer as a pixel dividing layer, and a concentration of indium oxide ions (InO) measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the transparent conductive oxide film layer on the side in contact with the light-emitting layer in an opening of the pixel dividing layer. ２ － ) is the detected intensity (InO ＭＬ ) counts, it is preferable that the formula (XA-2) and the formula (InA-1) are satisfied, and it is more preferable that the formula (XA-2a) and the formula (InA-1) are satisfied. ＭＬ ) / (InO ＭＬ )≦0.5000 (XA-2) 1,000≦(InO ＭＬ )≦40,000 (InA-1) 0.0001≦(X ＭＬ ) / (InO ＭＬ )≦0.5000 (XA-2a).

[0107] In the case of the above configuration, the display device according to the second aspect of the present invention has a transparent conductive oxide film layer containing indium as a main component element and having a thickness of 5 nm or more, as the outermost layer of the first electrode on the light-emitting layer side in the pixel section. Formula (InA-1) is a formula indicating that the detection intensity of indium oxide ions on the surface of the transparent conductive oxide film layer is within a specific range. In the pixel section, a higher detection intensity of indium oxide ions on the surface of the transparent conductive oxide film on the side in contact with the light-emitting layer indicates a higher proportion of the surface of the transparent conductive oxide film layer containing indium as a main component element that is exposed.

[0108] From the viewpoint of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting element, and improving migration resistance, the display device according to the second aspect of the present invention preferably satisfies the above formula (XA-2) and formula (InA-1), and further satisfies formula (SA-2), and more preferably satisfies formula (SA-2a). ＭＬ ) / (InO ＭＬ )≦0.2000 (SA-2) 0.0001≦(S ＭＬ ) / (InO ＭＬ )≦0.2000 (SA-2a).

[0109] (X ＭＬ ) / (InO ＭＬ ) is preferably 0 or more, more preferably 0.0001 or more, even more preferably 0.0003 or more, even more preferably 0.0005 or more, and particularly preferably 0.0010 or more. ＭＬ ) / (InO ＭＬ ) is preferably 0.0020 or more, more preferably 0.0040 or more, even more preferably 0.0060 or more, even more preferably 0.0080 or more, and particularly preferably 0.0100 or more. ＭＬ ) / (InO ＭＬ ) is preferably 0.5000 or less, more preferably 0.3000 or less, even more preferably 0.2000 or less, even more preferably 0.1500 or less, and particularly preferably 0.1200 or less. ＭＬ ) / (InO ＭＬ) is preferably 0.1000 or less, more preferably 0.0800 or less, even more preferably 0.0600 or less, even more preferably 0.0400 or less, particularly preferably 0.0300 or less, and most preferably 0.0250 or less.

[0110] In the display device according to the second aspect of the present invention, ＭＬ ), (F ＭＬ ) / (InO ＭＬ ), (Cl ＭＬ ) / (InO ＭＬ ), (Br ＭＬ ) / (InO ＭＬ ), and (S ＭＬ ) / (InO ＭＬ ) are also in the same ranges as those in the display device according to the first aspect of the present invention.

[0111] <Detection Intensity of Carbon Ions and Cyanide Ions on the Surface of the Conductive Inorganic Layer> From the viewpoint of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the element of the present invention further has a carbon ion (C ) concentration measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the conductive inorganic layer on the insulating resin layer side in the opening of the insulating resin layer. － ) detection intensity (C ＭＬ ) counts, and cyanide ions (CN － ) detection strength (CN ＭＬ ) counts, it is preferable that the formula (CA-1) and / or the formula (CNA-1) is satisfied. ＭＬ )≦4,000 (CA-1) 20≦(CN ＭＬ )≦4,000 (CNA-1).

[0112] (C ＭＬ ) is preferably 50 or more, more preferably 75 or more, and even more preferably 100 or more. ＭＬ ) is preferably 3,000 or less, more preferably 2,000 or less, and even more preferably 1,000 or less. ＭＬ The preferred range of (C ＭＬ ) is the same as the preferred range of

[0113] Formula (CA-1) and Formula (CNA-1) are formulas indicating that the detection intensity of carbon ions or cyanide ions on the surface of the conductive inorganic layer is within a specific range. At the opening of the insulating resin layer, the greater the detection intensity of carbon ions on the surface of the conductive inorganic layer on the insulating resin layer side, the greater the abundance ratio of carbon atoms on the surface of the conductive inorganic layer. Furthermore, the greater the detection intensity of cyanide ions, the greater the abundance ratio of carbon atoms bonded to nitrogen atoms on the surface of the conductive inorganic layer.

[0114] From the viewpoint of achieving low-voltage driving of light-emitting characteristics, improving the reliability of light-emitting elements, and improving migration resistance, the display device of the present invention has a second electrode and a light-emitting layer, a conductive inorganic layer is a first electrode, an insulating resin layer is a pixel dividing layer, and a transparent conductive oxide film layer containing indium as a main element is provided on the outermost surface of the first electrode on the light-emitting layer side, and the display device of the present invention has a carbon ion detection intensity (C ＭＬ ) counts, and the detection intensity of cyanide ions is (C ＭＬ ) counts, it is preferable that the formula (CA-2) and / or the formula (CNA-2) are satisfied and the formula (InA-1) is satisfied. ＭＬ ) / (InO ＭＬ )≦4.0 (CA-2) 0.001≦(CN ＭＬ ) / (InO ＭＬ )≦4.0 (CNA-2) 1,000≦(InO ＭＬ )≦40,000 (InA-1).

[0115] (C ＭＬ ) / (InO ＭＬ ) is preferably 0.003 or more, more preferably 0.005 or more, even more preferably 0.010 or more, and particularly preferably 0.020 or more. ＭＬ ) / (InO ＭＬ ) is preferably 0.050 or more, more preferably 0.075 or more, and even more preferably 0.100 or more. ＭＬ ) / (InOＭＬ ) is preferably 3.0 or less, more preferably 2.0 or less, and even more preferably 1.0 or less.

[0116] (CN ＭＬ ) / (InO ＭＬ The preferred range of (C ＭＬ ) / (InO ＭＬ The preferred range is the same as that of (InO ＭＬ ) are as described above.

[0117] <Pixel Division Layer> The display device of the present invention preferably has a pixel division layer. The pixel division layer is a layer that divides adjacent pixel portions and defines the area of ​​each pixel portion. The pixel division layer is preferably a layer that divides the area on the first electrode. The pixel division layer is preferably formed so as to overlap a portion on the first electrode. With this configuration, the first electrode and the second electrode in any pixel can be insulated from each other, and the first electrodes between multiple adjacent pixels can be insulated from each other. The pixel division layer is preferably made of a cured product obtained by curing a photosensitive composition. The pixel division layer is preferably black. The pixel division layer can be made black by coloring a component such as a resin in the photosensitive composition.

[0118] The display device of the present invention preferably has a pixel division layer section having a plurality of openings in a planar view. The pixel division layer described above corresponds to the pixel division layer section in a planar view. The shape of the pixel section described below is preferably similar or analogous to the shape of the openings in the pixel division layer section, and more preferably identical to the shape of the openings in the pixel division layer section. The shape of the pixel section in a planar view is preferably a closed polygon, a closed polygon with at least some of its sides and / or vertices replaced with arcs, or a closed shape formed by arcs. Examples of closed polygons include triangles, equilateral triangles, quadrilaterals, squares, rhombuses, rectangles, pentagons, regular pentagons, right-angled pentagons, hexagons, regular hexagons, right-angled hexagons, heptagons, and octagons. Examples of closed shapes formed by arcs include circles, perfect circles, and ellipses.

[0119] <Stepped Shape Having Thick and Thin Film Portions> In the display device of the present invention, from the viewpoint of improving the reliability of the light-emitting element, it is preferable that the pixel division layer has a stepped shape having a thick film portion and a thin film portion. By having the pixel division layer have a thick film portion and a thin film portion, only the thick film portion of the pixel division layer comes into contact with the vapor deposition mask when forming the light-emitting layer, thereby reducing the contact area between the pixel division layer and the vapor deposition mask. This prevents damage to the pixel division layer, significantly reducing panel yield reductions and improving the reliability of the light-emitting element. Furthermore, the thin film portion has light-shielding properties, which suppresses outgassing from the pixel division layer and the film below it, significantly improving the reliability of the light-emitting element. Furthermore, in the display device of the present invention, from the viewpoint of suppressing external light reflection and improving the reliability of the light-emitting element, it is preferable that the thin film portion contains an (XD) colorant, and that the optical density at the wavelength of visible light per 1 μm of film thickness of the thin film portion is 0.5 or more and 3.0 or less.

[0120] In the display device of the present invention, from the viewpoints of achieving low-voltage operation of light-emitting characteristics, improving the reliability of light-emitting elements, and improving migration resistance, it is preferable that the pixel dividing layer has a stepped shape having thick and thin film portions, and that the thick and thin film portions contain the same (XA) resin. Furthermore, from the viewpoint of similar inventive effects, it is also preferable that the pixel dividing layer has a stepped shape having thick and thin film portions, that the thick and thin film portions contain the same (XD) colorant, and that the optical density at the wavelength of visible light per 1 μm of film thickness of both the thick and thin film portions is 0.5 or more and 3.0 or less. Note that the term "same (XA) resin" refers to a resin whose structural units are identical in structure. In other words, a resin whose structural units, such as amine residues and carboxylic acid residues, have the same structure is considered to be the same (XA) resin.

[0121] In the above configuration, it is preferable that the pixel division layer is a cured product obtained by curing a single photosensitive composition, and that the thick and thin portions of the pixel division layer are formed by a method of simultaneously processing a stepped shape using a halftone photomask. In this case, the thick and thin portions have the same degree of crosslinking, resulting in a uniform gradient of crosslinking within the film. Therefore, it is believed that the occurrence of fine cracks and the occurrence of fine coarse-dense structures in the film due to differences in the thermal expansion coefficients between the thick and thin portions are suppressed, and the polarization structure and charge balance within the film are controlled. As a result, it is presumed that the suppression of ion migration and electromigration caused by metal impurities and ionic impurities that adversely affect light-emitting properties or electrical insulation properties significantly improves the reliability and migration resistance of the light-emitting element. Furthermore, it is believed that the suppression of fine cracks and the suppression of the occurrence of fine coarse-dense structures in the film suppresses the occurrence of residues after thermal curing due to outgassing from the pixel division layer. Therefore, it is estimated that suppressing residues on the surface of the first electrode at the opening of the pixel dividing layer promotes the surface modification action on the surface of the first electrode, resulting in significant effects of lowering the driving voltage for light-emitting characteristics and improving the light-emitting brightness.

[0122] FIG. 1 shows a schematic cross-sectional view and a plan view illustrating an example of a display device 100A in which a pixel division layer has a stepped shape with thick and thin film portions. The cross-sectional view in FIG. 1 is a view of a cross section taken along a cross-sectional axis 100x in the plan view. Metal wiring 102 and a TFT element layer 103 are formed on a substrate 101, and an interlayer insulating layer 104 and a TFT planarizing layer / TFT protective layer 105 are formed thereon in this order. A pixel division layer 106 having a stepped shape and a first electrode 107 are formed on the TFT planarizing layer / TFT protective layer 105 such that the pixel division layer 106 divides the first electrode 107 and overlaps a portion of the first electrode 107. The pixel division layer 106 has a thick film portion 116. Further formed on the substrate 102 in this order are a light-emitting layer 108, a second electrode 109, a sealing layer 110, touch panel wiring / touch panel electrode 111, a color filter layer 112, a black matrix layer 113, an overcoat layer 114, and a substrate 115. In addition, a color filter layer portion 112a, an opening 117a in a pixel dividing layer portion, and an opening 118a in a black matrix layer portion are formed in the portion corresponding to the pixel portion in a plan view.

[0123] The thick and / or thin portions of the pixel division layer are preferably black. The optical density at the wavelength of visible light per 1 μm of film thickness of the thick and thin portions is preferably 0.5 or more, more preferably 0.7 or more, even more preferably 1.0 or more, even more preferably 1.2 or more, and particularly preferably 1.5 or more, from the viewpoint of suppressing external light reflection and improving the reliability of the light-emitting device. On the other hand, the optical density is preferably 3.0 or less, more preferably 2.5 or less, and even more preferably 2.0 or less, from the viewpoint of low-voltage driving of the light-emitting characteristics. The optical density is preferably the optical density of a cured product obtained by heating and curing the composition.

[0124] From the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of light-emitting elements, and improving migration resistance, the display device of the present invention preferably has a pixel dividing layer having a stepped shape with a thick film portion and a thin film portion, the thin film portion containing an (XD) colorant, and having an optical density of the thin film portion at a wavelength of visible light per 1 μm of film thickness of 0.5 or more and 3.0 or less, and the thick film portion satisfying at least one of the following conditions (SP1) to (SP3): (SP1) The thick film portion does not contain an (XD) colorant; (SP2) The thick film portion contains an (XD) colorant, and has an optical density of the thick film portion at a wavelength of visible light per 1 μm of film thickness of 0.0 or more and 0.3 or less; and (SP3) The thick film portion contains an (XC1x) compound: one or more compounds selected from the group consisting of a carboxylic acid having an indene structure, a carboxylic acid ester having an indene structure, a sulfonic acid having an indene structure, and a sulfonic acid aryl ester having an indene structure.

[0125] In this case, it is preferable that the thick and thin portions of the pixel division layer are cured products obtained by curing at least two photosensitive compositions having different compositions. It is also preferable that the thick and thin portions of the pixel division layer are formed by a two-layer film formation method. When the above condition (SP1) or (SP2) is satisfied, it is preferable that the thick portions contain a lower amount of (XD) colorant than the thin portions, and / or that the thick portions contain a higher amount of (XA) resin than the thin portions. When the above condition (SP3) is satisfied, it is preferable that the thick portions are cured products obtained by curing a positive-type photosensitive composition. Furthermore, when the pixel division layer is formed by a two-layer film formation method, the openings of the pixel division layer come into contact with the alkaline developer twice, thereby suppressing residue on the surface of the first electrode and promoting surface modification on the surface of the first electrode, which is presumed to significantly reduce the driving voltage of the light-emitting characteristics and improve the luminance. In particular, when the thick portions are formed from a positive-type photosensitive composition, exposure to light promotes alkaline dissolution of the openings of the pixel division layer, thereby significantly enhancing the effects of the above-mentioned invention. Furthermore, since the thin film portion is formed by full-tone exposure rather than half-tone exposure, a high degree of crosslinking in the film can be maintained regardless of whether a negative or positive photosensitive composition is used. Furthermore, if the above condition (SP1) or (SP2) is satisfied, the gradient of the degree of crosslinking in the film can be minimized. Therefore, it is believed that the polarization structure and charge balance in the film are controlled in the same manner as above, resulting in significant improvements in the reliability or migration resistance of the light-emitting device. When the thick film portion is formed from a positive photosensitive composition, the effects of the above invention become significant due to the crosslinking formed between the thin film portion and the positive photosensitive composition.

[0126] <(XA) Resin in Insulating Resin Layer> In the element of the present invention, the insulating resin layer preferably contains an (XA) resin. The (XA) resin in the insulating resin layer is preferably the (A) binder resin described below, and a resin having a structure derived from the (A) binder resin is also preferred. From the viewpoint of achieving low-voltage driving of light-emitting characteristics, the (XA) resin preferably has a (WA) weakly acidic group: one or more groups selected from the group consisting of a phenolic hydroxyl group, a hydroxyimide group, a hydroxyamide group, a silanol group, and a mercapto group, and more preferably has a (WA) weakly acidic group in the structural unit of the resin. From the viewpoint of achieving low-voltage driving of light-emitting characteristics, the (WA) weakly acidic group is preferably a phenolic hydroxyl group or a silanol group, and more preferably a phenolic hydroxyl group. Note that an (XA) resin having a (WA) weakly acidic group may also be referred to as a (XA1) weakly acidic group-containing resin.

[0127] In the element of the present invention, from the viewpoints of achieving low-voltage operation of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the insulating resin layer preferably contains a (XA1x) resin: a resin having one or more structures selected from the group consisting of an imide structure, an amide structure, an oxazole structure, and a siloxane structure (hereinafter referred to as "imide structure, etc.") in the structural unit of the resin, and / or a (XA1y) resin: a resin having a phenolic hydroxyl group in the structural unit of the resin. In view of the effects of the above-mentioned invention, the element of the present invention preferably contains the (XA1x) resin having the above-mentioned (WA) weakly acidic group. In view of the effects of the above-mentioned invention, the element of the present invention also preferably contains the (XA1x) resin and / or the (XA1y) resin.

[0128] The structural unit having an imide structure or the like and the structural unit having a phenolic hydroxyl group are both structural units that constitute the resin, and are repeating units having a repeating number of 2 or more. The repeating number of these units is preferably 2 or more, more preferably 5 or more, and even more preferably 10 or more. On the other hand, the repeating number is preferably 1,000 or less. The repeating number of these units is preferably 2 or more, more preferably 5 or more, and even more preferably 10 or more. On the other hand, the repeating number is preferably 1,000 or less.

[0129] In view of the effects of the invention described above, it is more preferable that the insulating resin layer of the element of the present invention contains an (XA1x) resin. The (XA1x) resin preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, polyamide, polysiloxane, maleimide resin, maleimide-styrene resin, maleimide-triazine resin, maleimide-oxazine resin, and copolymers thereof, and more preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, and copolymers thereof (hereinafter referred to as "polyimide-based resin"). It is even more preferable that the (XA1x) resin contains two or more resins selected from the group consisting of polyimide-based resins, and it is particularly preferable that it contains a polyimide precursor and a polybenzoxazole precursor. In view of the effects of the invention described above, it is more preferable that the (XA1) weakly acidic group-containing resin contains an (XA1x) resin. When the polyimide resin has the above-mentioned weakly acidic group (WA), it may be referred to as a polyimide resin having a weakly acidic group.

[0130] Examples of polyimide precursors include polyamic acid, polyamic acid ester, polyamic acid amide, and polyisoimide. Examples of polyimides include resins obtained by dehydrating and cyclizing polyimide precursors. Examples of polybenzoxazole precursors include polyhydroxyamides. Examples of polybenzoxazoles include resins obtained by dehydrating and cyclizing polybenzoxazole precursors. Examples of polyamideimide precursors include resins obtained by reacting tricarboxylic acid anhydrides with diamines. Examples of polyamideimides include resins obtained by dehydrating and cyclizing polyamideimide precursors. Examples of polyamides include resins obtained by reacting dicarboxylic acid chlorides with diamines. Polyimide-based resins and polyimide-based resins having weak acidic groups may also be copolymers with polyamides. The (XA1x) resin may be a single resin or a copolymer thereof.

[0131] By adopting the above-mentioned configuration, it is believed that these resins promote the surface modification action on the surface of the conductive inorganic layer at the openings of the insulating resin layer. Therefore, it is presumed that the effects of lowering the driving voltage of the light-emitting characteristics and improving the light-emitting brightness are significant. Furthermore, these resins have superior heat resistance and low outgassing compared to general resins, so the effects of improving the reliability and migration resistance of the light-emitting element are significant.

[0132] The polyimide resin having a weak acidic group preferably has an amine residue having a phenolic hydroxyl group. The amine residue having a phenolic hydroxyl group more preferably has at least two cyclic structures having a phenolic hydroxyl group. The polyimide resin having a weak acidic group also preferably has an amine residue having two or more types of phenolic hydroxyl groups. From the viewpoint of improving the reliability and migration resistance of the light-emitting device, the cyclic structure is preferably an aromatic structure or a condensed polycyclic structure, and more preferably an aromatic structure having 6 to 15 carbon atoms or a condensed polycyclic structure having 6 to 20 carbon atoms. The aromatic structure is preferably a biphenyl structure or a benzene structure. The condensed polycyclic structure is preferably a fluorene structure, an anthracene structure, or a naphthalene structure. The phenolic hydroxyl group in the amine residue having a phenolic hydroxyl group may react with a structure and / or group in the resin to form a benzoxazole ring. That is, in a resin having a benzoxazole ring in its structural unit, the benzoxazole ring may have an amine residue having a phenolic hydroxyl group.

[0133] <Amine residue having a phenolic hydroxyl group> The (XA1x) resin preferably has an amine residue having a phenolic hydroxyl group. When the insulating resin layer contains an (XA1x) resin, and the (XA1x) resin includes one or more types selected from the group consisting of polyimide resins, the (XA1x) resin preferably has an amine residue having a phenolic hydroxyl group. It is also preferable that the (XA1x) resin have two or more types of amine residues having phenolic hydroxyl groups.

[0134] From the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the amine residue having a phenolic hydroxyl group preferably has an amine residue that satisfies the following condition (XS1x) (hereinafter referred to as "specific amine residue having a phenolic hydroxyl group"). The specific amine residue having a phenolic hydroxyl group is more preferably an amine residue that further satisfies the following condition (XS1y), and even more preferably an amine residue that further satisfies the following condition (XS1z). (XS1x) The molecular symmetry of the amine residue is C１ It has an axis of symmetry and C ２ No symmetry axis (XS1y) C as the molecular symmetry of the amine residue １ It has an axis of symmetry and C ２ Axis of symmetry and C ３ The molecular symmetry of the amine residue (XS1z) is C １ It has an axis of symmetry and C １ It has no other axis of symmetry than the axis of symmetry.

[0135] The amine residue in the amine residue having a phenolic hydroxyl group is as described above. The molecular symmetry of the amine residue in the above conditions (XS1x) to (XS1z) refers to the molecular symmetry of the amine residue when the amine residue contained in the (XA) resin in the insulating resin layer is considered as a molecule. Examples of molecular symmetry include an axis of symmetry, a plane of symmetry, a center of symmetry, and an axis of rotation. The above conditions (XS1x) to (XS1z) are intended to take into consideration the axis of symmetry among these molecular symmetries.

[0136] C as molecular symmetry under the above conditions (XS1x) to (XS1z) ｘ Having a symmetry axis means that when the three-dimensional structure of the molecule in question is rotated (360 / x) degrees around an arbitrary axis, the three-dimensional structure before and after the rotation is the same. Here, x represents an integer of 1 or more. In other words, the molecular symmetry is C １ Having an axis of symmetry means that the three-dimensional structure is the same before and after a 360° rotation around an arbitrary axis. ２ Having an axis of symmetry means that the three-dimensional structure is the same before and after a 180° rotation around an arbitrary axis. ３ Having a symmetry axis means that the three-dimensional structure is the same before and after a 120° rotation around an arbitrary axis. １ The fact that there is no axis of symmetry other than the axis of symmetry means that ２ Axis of symmetry (the axis on which the three-dimensional structure is the same before and after a 180° rotation) and C ３ Symmetry axis (the axis on which the three-dimensional structure is the same before and after a 120° rotation) ｘ It means that there is no axis of symmetry (1<x≦360).

[0137] In the above conditions (XS1x) to (XS1z) for an amine residue having a phenolic hydroxyl group, when considering the symmetry axis in the molecular symmetry of the amine residue, the three-dimensional structure of the target amine residue before rotation takes into consideration all possible conformations of the molecule. That is, in the three-dimensional structure before rotation, at least one of the possible conformations of the target amine residue as a molecule is C ２ If there is a symmetry axis, the above condition (XS1x) is not satisfied, and at least one C ２ Axis of symmetry or C ３ If there is a symmetry axis, the above condition (XS1y) is not satisfied, and at least one C ｘ If there is an axis of symmetry (1<x≦360), the above condition (XS1z) is not satisfied.

[0138] It is also preferable that the amine residue having a phenolic hydroxyl group has an amine residue that includes at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis.

[0139] By configuring the amine residue having a phenolic hydroxyl group as described above, the amine residue having a phenolic hydroxyl group can be C ２ Because the (XA) resin has an asymmetric structure without an axis of symmetry, the symmetry of the (XA) resin in the insulating resin layer is reduced. Therefore, it is believed that orientation and stacking of the (XA) resin in the insulating resin layer are suppressed. As a result, it is presumed that the improved solubility of the (XA) resin suppresses the generation of residues after development during pattern processing of the insulating resin layer, promotes the surface modification action on the substrate surface by the above-mentioned fluorine element, fluoride ions, etc., and significantly reduces the effect of driving the light-emitting characteristics at a low voltage. In addition, it is presumed that the above-mentioned fluorine element, fluoride ions, etc. promote the control of the polarization structure and charge balance in the cured product. As a result, it is presumed that ion migration and electromigration are suppressed, significantly improving the reliability and migration resistance of the light-emitting device.

[0140] The amine residue having a phenolic hydroxyl group preferably has an amine residue represented by formula (31) from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance.

[0141]

[0142] In formula (31), R ３１ and R ３２ R each independently represents a carboxy group, a mercapto group, or a sulfonic acid group. ３９ represents a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. ６１ and R ６２ each independently represents an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkenyloxy group having 2 to 10 carbon atoms, or an acyl group having 1 to 10 carbon atoms. X １１ and X １２ each independently represents a direct bond, a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonylamide group. １１ represents a sulfonyl group, an alkylene group, a fused polycyclic structure, a hydrocarbon group containing an ether bond, a direct bond, an ether bond, a sulfide bond, a carbonyl group, a carboxylic acid ester bond, an amide bond, a urea bond, a urethane bond, a carbonate ester bond, a cycloalkylene group, an arylene group, a fused polycyclic heterocyclic structure, a hydrocarbon group containing a carbonyloxy group, or a hydrocarbon group containing a carbonylamide group. a and b each independently represent an integer of 1 to 4. g and h each independently represent an integer of 0 to 3. o and p each independently represent an integer of 0 to 3. w represents an integer of 0 to 6. Note that 1≦a+g+o≦4 and 1≦b+h+p≦4. １ and * ２ each independently represents a bonding point in the resin.

[0143] In formula (31), R ３９The hydrocarbon group in the hydrocarbon group, the hydrocarbon group containing an ether bond, and the hydrocarbon group containing a carbonyl group is preferably an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, or an arylalkyl group having 10 to 20 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. When o represents an integer of 1 to 3, the corresponding R ６１ is preferably an alkyl group having 1 to 6 carbon atoms, more preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, or an s-butyl group. When p represents an integer of 1 to 3, the corresponding R ６２ is preferably an alkyl group having 1 to 6 carbon atoms, and more preferably a methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, or s-butyl group. It is preferable that at least one of o and p is 1. It is also preferable that o and p are 0, and more preferably that o and p are 1. It is also preferable that o represents an integer of 1 to 3 and p is 0, and more preferably o is 1. It is also preferable that o is 0 and p represents an integer of 1 to 3, and more preferably p is 1.

[0144] From the viewpoint of satisfying the above condition (XS1x), R ３９ It is preferable that the chemical structure of (XS1x) satisfies the above condition (XS1x). ３１ and R ３２ (b) the chemical structures of R bonded to the aromatic ring in formula (31) are not the same; ３１ and R ３２ and (c) g and h each independently represent an integer of 0 to 3 that is different from each other. ６１ and R ６２ (e) The chemical structures of R bonded to the aromatic ring in formula (31) are not the same. ６１ and R ６２and (f) o and p each independently represent a mutually different integer of 0 to 3. From the viewpoint of satisfying the condition (XS1x), it is also preferable to satisfy at least one of the conditions: (g) the substitution positions of at least two phenolic hydroxyl groups bonded to the aromatic ring in formula (31) are different (asymmetric substitution positions); and (h) a and b each independently represent a mutually different integer of 1 to 4.

[0145] In formula (31), X １１ and X １２ The hydrocarbon group in the hydrocarbon group, the hydrocarbon group containing an ether bond, and the hydrocarbon group containing a carbonylamide group is preferably an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 4 to 10 carbon atoms, an arylene group having 6 to 15 carbon atoms, or an arylalkylene group having 10 to 20 carbon atoms. １１ and X １２ The hydrocarbon group in the hydrocarbon group containing a carbonylamide group in formula (31) is more preferably an arylene group having 6 to 15 carbon atoms, and even more preferably an arylene group having 6 to 10 carbon atoms. It is preferable that the arylene group having 6 to 15 carbon atoms is bonded to the carbonyl group in the carbonylamide group. In addition, the nitrogen atom of the carbonylamide group is bonded to the aromatic ring in formula (31), and the arylene group having 6 to 15 carbon atoms bonded to the carbonyl group in the carbonylamide group is * in formula (31). １ or* ２ It is preferable that Y １１ In the hydrocarbon group containing an ether bond, the hydrocarbon group is preferably an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 4 to 10 carbon atoms, or an arylene group having 6 to 15 carbon atoms. １１ In the above, the hydrocarbon group containing a carbonyloxy group and the hydrocarbon group containing a carbonylamide group preferably have 1 to 15 carbon atoms, and the hydrocarbon group preferably has an aliphatic structure, an alicyclic structure, an aromatic structure, a fused polycyclic structure, or a fused polycyclic heterocyclic structure. The above-mentioned substituents and structures may have heteroatoms, and may be either unsubstituted or substituted.

[0146] From the viewpoint of satisfying the above condition (XS1x), (i) X １１ and X １２ and (j) the X bonded to the aromatic ring in formula (31) １１ and X １２ In addition, from the viewpoint of satisfying the above condition (XS1x), it is preferable that at least one of the following conditions is satisfied: １１ It is also preferable that the chemical structure satisfies the above condition (XS1x).

[0147] The phenolic hydroxyl group in the amine residue represented by formula (31) may react with a structure and / or group in the resin to form a benzoxazole ring. That is, in a resin having a benzoxazole ring in its structural unit, the benzoxazole ring may have an amine residue represented by formula (31).

[0148] When the chemical structures in the amine residue having a phenolic hydroxyl group are not identical, it is preferable that the compared structures differ in at least one of the number of carbon atoms, the number of hydrogen atoms, the number of heteroatoms, the molecular weight, the molecular volume, and the aspect ratio. When the chemical structures in the amine residue having a phenolic hydroxyl group are not identical, it is also preferable that the compared structures are in a relationship of structural isomerism or geometric isomerism. It is also preferable that the compared structures have at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis. The same applies to the following description of the structure in the amine residue having a phenolic hydroxyl group.

[0149] In formula (31), Y １１ As the group represented by formula (31), a group represented by formula (32), formula (33), or formula (34) is preferred from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance. １１ is a group represented by formula (32), formula (33), or formula (34), R in formula (31) ３９ is R bonded to an atom of the ring member in formula (32). ３４ a group corresponding to R bonded to a ring atom in formula (33) ３５or a group corresponding to R in formula (34) ３６ Or R ３７ is a group that bonds to

[0150]

[0151] In formulas (32) to (34), R ３４ and R ３５ R each independently represents a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. ３６ and R ３７ R each independently represents a hydrogen atom, a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. ３９ represents a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. a and b each independently represent an integer of 1 or 2. c represents an integer of 1 to ((4×a)+2). d represents an integer of 1 to ((4×a)+4). w represents an integer of 0 to 6. * １ ~* ６ each independently represents a bonding point with an aromatic ring in the resin of formula (31). Formula (32) satisfies the following condition (XY1), formula (33) satisfies the following condition (XY2), and formula (34) satisfies the following condition (XY3).

[0152] (XY1) When the carbon center bonding to the aromatic ring in formula (31) is α (denoted by □), and the carbon atom is the 1st position, and the (a+2) position of the carbon atom forming the ring is β (denoted by ◯), the chemical structures on the left and right sides separated by the dashed line passing through α and β on the paper are not identical. (XY2) When the carbon center bonding to the aromatic ring in formula (31) is γ (denoted by □), and the carbon atom is the 1st position, and the midpoint between the (b+2) position and the (b+3) position of the carbon atom forming the ring is δ (denoted by ●), the chemical structures on the left and right sides separated by the dashed line passing through γ and δ on the paper are not identical. (XY3) When the R in formula (34) is ３６ and R ３７ The chemical structures of the compounds are not identical.

[0153] In addition, when the group represented by formula (32) has at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis, formula (32) satisfies the above-mentioned condition (XY1).In addition, when the group represented by formula (33) has at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis, formula (33) satisfies the above-mentioned condition (XY2).In addition, when the group represented by formula (34) has at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis, formula (34) satisfies the above-mentioned condition (XY3).

[0154] When considering the above conditions (XY1) to (XY3) for formulas (32) to (34), the chemical structure of the group represented by the target formula (32), formula (33), or formula (34) takes into consideration all possible conformations that the target group can take. That is, if at least one of the possible conformations that the target group represented by the target formula (32) has the same chemical structure on the left and right sides separated by a dashed line passing through α and β on the paper, it is deemed not to satisfy the above condition (XY1). Also, if at least one of the possible conformations that the target group represented by the target formula (33) has the same chemical structure on the left and right sides separated by a dashed line passing through α and γ on the paper, it is deemed not to satisfy the above condition (XY2). Also, if at least one of the possible conformations that the target group represented by the target formula (34) has the same chemical structure on the left and right sides separated by a dashed line passing through α and γ on the paper, it is deemed not to satisfy the above condition (XY2). ３６ and R ３７ If the chemical structures of the above are the same, the condition (XY3) is not satisfied.

[0155] In formulas (32) to (34), R ３６ and R ３７ are each independently preferably a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. ３４ Medium, R ３５ Medium, R ３６ Medium, R ３７ Naka, and R ３９The hydrocarbon group in the hydrocarbon group, the hydrocarbon group containing an ether bond, and the hydrocarbon group containing a carbonyl group is preferably an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, or an arylalkyl group having 10 to 20 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms.

[0156] By configuring the amine residue having a phenolic hydroxyl group as described above, the amine residue having a phenolic hydroxyl group can be C ２ Since the (XA) resin has an asymmetric structure without an axis of symmetry or a three-dimensionally asymmetric structure, the symmetry of the (XA) resin in the insulating resin layer is reduced. Therefore, it is considered that the orientation and stacking of the (XA) resin in the insulating resin layer is suppressed. For the same reasons as above, it is presumed that the effects of lowering the voltage required for driving the light-emitting characteristics, improving the reliability of the light-emitting device, and improving the migration resistance are significant.

[0157] The amine residue having a phenolic hydroxyl group satisfies the above condition (XS1x) from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, and has an amine residue represented by formula (31), and further, in formula (31), Y １１ is particularly preferably a group represented by formula (32), formula (33), or formula (34).

[0158] In formula (31), Y １１ From the viewpoint of the above-mentioned effects of the present invention, is preferably a group represented by any one of formulas (55) to (68).

[0159]

[0160] In formulas (55) to (68), * each independently represents a bonding point in the resin.

[0161] In formula (31), Y １１ As the amine residue having a phenolic hydroxyl group, which is a group represented by any one of formulas (55) to (68), an amine residue represented by any one of formulas (70) to (99) is preferred.

[0162]

[0163]

[0164] <Amine Residue Not Having a Phenolic Hydroxyl Group> The (XA1x) resin preferably has an amine residue not having a phenolic hydroxyl group. The (XA1x) resin preferably has two or more types of amine residues not having a phenolic hydroxyl group.

[0165] When the insulating resin layer contains an (XA1x) resin and the (XA1x) resin includes one or more types selected from the group consisting of polyimide resins, the (XA1x) resin preferably has an amine residue having a phenolic hydroxyl group and an amine residue not having a phenolic hydroxyl group.

[0166] From the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, it is preferable that the amine residue having no phenolic hydroxyl group has an amine residue that satisfies at least one of the following conditions (XS1x) and (XS2x) (hereinafter referred to as a "specific amine residue having no phenolic hydroxyl group").

[0167] From the viewpoint of the effects of the invention described above, it is preferred that the (XA1x) resin has an amine residue having a phenolic hydroxyl group that satisfies the following condition (XS1x), and / or an amine residue not having a phenolic hydroxyl group that satisfies at least one of the following conditions (XS1x) and (XS2x) (hereinafter referred to as "specific amine residue not having a phenolic hydroxyl group"). １ It has an axis of symmetry and C ２ No symmetry axis (XS1y) C as the molecular symmetry of the amine residue １ It has an axis of symmetry and C ２ Axis of symmetry and C ３ The molecular symmetry of the amine residue (XS1z) is C １ It has an axis of symmetry and C １(XS2x) The amine residue has at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis; (XS2y) The amine residue has at least one of an asymmetric center and an asymmetric axis; and (XS2z) The amine residue has an asymmetric axis.

[0168] The amine residue having no phenolic hydroxyl group and satisfying the condition (XS1x) is more preferably an amine residue that further satisfies the condition (XS1y), and even more preferably an amine residue that further satisfies the condition (XS1z).Furthermore, the amine residue having no phenolic hydroxyl group and satisfying the condition (XS2x) is more preferably an amine residue that further satisfies the condition (XS2y), and even more preferably an amine residue that further satisfies the condition (XS2z).

[0169] The amine residue in the amine residue having no phenolic hydroxyl group is as described above. The examples and preferred descriptions regarding the above conditions (XS1x) to (XS1z) regarding the amine residue having a phenolic hydroxyl group are the same as those described above. The examples and preferred descriptions regarding the amine residue under the above conditions (XS1x) to (XS1z) and (XS2x) to (XS2z) regarding the amine residue having no phenolic hydroxyl group are the same as those described above regarding the amine residue having a phenolic hydroxyl group. Furthermore, the molecular symmetry and molecular symmetry of the amine residue under the above conditions (XS1x) to (XS1z) regarding the amine residue having no phenolic hydroxyl group are C ｘ Examples and preferred descriptions regarding the presence of an axis of symmetry are as described above in the amine residue having a phenolic hydroxyl group.

[0170] In the above conditions (XS1x) to (XS1z) for an amine residue not having a phenolic hydroxyl group, when considering the symmetry axis in the molecular symmetry of the amine residue, all possible conformations of the molecule are taken into consideration for the three-dimensional structure of the target amine residue before rotation, as with an amine residue having a phenolic hydroxyl group. That is, in the three-dimensional structure before rotation, at least one of the possible conformations of the target amine residue as a molecule is C ２ If there is a symmetry axis, the above condition (XS1x) is not satisfied, and at least one C ２ Axis of symmetry or C ３ If there is a symmetry axis, the above condition (XS1y) is not satisfied, and at least one C ｘ If there is an axis of symmetry (1<x≦360), the above condition (XS1z) is not satisfied.

[0171] The asymmetric center, asymmetric axis, asymmetric plane, and helical axis in the above conditions (XS2x) to (XS2z) refer to the asymmetric center, asymmetric axis, asymmetric plane, and helical axis in the molecule when the amine residue in the (XA) resin in the insulating resin layer is considered as a molecule.

[0172] Examples of asymmetric centers include asymmetric atoms.Preferably, asymmetric atoms include asymmetric carbon atoms, asymmetric silicon atoms, asymmetric germanium atoms, asymmetric nitrogen atoms, asymmetric phosphorus atoms, or asymmetric arsenic atoms.As asymmetric axes, for example, the axis connecting two rings in two ring structures, the axis connecting two ring structures passing through the central atom in two ring structures connected by sharing one central atom, or the axis linearly connecting three atoms connected by two double bonds.As structures having asymmetric axes, preferred are biphenyl structures, binaphthyl structures, spiro structures, or allene structures.As asymmetric planes, for example, the faces of at least two rings facing each other in a ring structure formed by connecting at least two rings with a single bond, or the faces of at least two rings facing each other in a metal coordination ring structure containing at least two rings coordinated to a metal atom.As structures having asymmetric planes, preferred are cyclophane structures or metallocene structures, and more preferred are paracyclophane structures or ferrocene structures. The helical axis may be, for example, an axis of a helical structure in which at least two aromatic rings are fused in succession. The structure having a helical axis is preferably a polyhelicene structure.

[0173] In the above conditions (XS2x) to (XS2z), when the amine residue in the (XA) resin in the insulating resin layer is taken as a molecule, the asymmetric center, asymmetric axis, asymmetric plane, and helical axis may be a meso compound. Furthermore, the amine residue in the above conditions (XS2x) to (XS2z) preferably has chirality, more preferably central chirality, axial chirality, planar chirality, or helicity.

[0174] By configuring the amine residue having no phenolic hydroxyl group as described above, the amine residue having no phenolic hydroxyl group can be ２Since the (XA) resin has an asymmetric structure without an axis of symmetry or a three-dimensionally asymmetric structure, the symmetry of the (XA) resin in the insulating resin layer is reduced. Therefore, it is believed that the orientation and stacking of the (XA) resin in the insulating resin layer is suppressed. As a result, for the same reasons as those of the amine residue having a phenolic hydroxyl group, it is presumed that the effects of lowering the voltage required for driving the light-emitting device, improving the reliability of the light-emitting device, and improving migration resistance are significant.

[0175] The amine residue having no phenolic hydroxyl group preferably has an amine residue represented by formula (36) from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance.

[0176]

[0177] In formula (36), R ８１ and R ８２ R each independently represents a carboxy group, a mercapto group, or a sulfonic acid group. ８９ represents a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. ９１ and R ９２ each independently represents an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkenyloxy group having 2 to 10 carbon atoms, or an acyl group having 1 to 10 carbon atoms. X ３１ and X ３２ each independently represents a direct bond, a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonylamide group. ３３ and X ３４ each independently represents a direct bond, a hydrocarbon group, a hydrocarbon group containing an ether bond, a hydrocarbon group containing a carbonyloxy group, or a hydrocarbon group containing a carbonylamide group. ３１represents a sulfonyl group, an alkylene group, a fused polycyclic structure, a hydrocarbon group containing an ether bond, a direct bond, an ether bond, a sulfide bond, a carbonyl group, a carboxylic acid ester bond, an amide bond, a urea bond, a urethane bond, a carbonate ester bond, a cycloalkylene group, an arylene group, a fused polycyclic heterocyclic structure, a hydrocarbon group containing a carbonyloxy group, or a hydrocarbon group containing a carbonylamide group. g and h each independently represent an integer of 0 to 4. o and p each independently represent an integer of 0 to 4. x and y each independently represent 0 or 1. w represents an integer of 0 to 6. １ and * ２ each independently represents a bonding point in the resin.

[0178] In formula (36), R ８９ The hydrocarbon group in the hydrocarbon group, the hydrocarbon group containing an ether bond, and the hydrocarbon group containing a carbonyl group is preferably an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, or an arylalkyl group having 10 to 20 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. When o represents an integer of 1 to 3, the corresponding R ９１ is preferably an alkyl group having 1 to 6 carbon atoms, more preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, or an s-butyl group. When p represents an integer of 1 to 3, the corresponding R ９２ is preferably an alkyl group having 1 to 6 carbon atoms, and more preferably a methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, or s-butyl group. It is preferable that at least one of o and p is 1. It is also preferable that o and p are 0, and more preferably that o and p are 1. It is also preferable that o represents an integer of 1 to 3 and p is 0, and more preferably o is 1. It is also preferable that o is 0 and p represents an integer of 1 to 3, and more preferably p is 1.

[0179] From the viewpoint of satisfying the above condition (XS1x), R ８９It is preferable that the chemical structure of (XS1x) satisfies the above condition (XS1x). ８１ and R ８２ (b) the chemical structures of R bonded to the aromatic ring in formula (36) are not the same; ８１ and R ８２ and (c) g and h each independently represent an integer of 0 to 4 that is different from each other. ９１ and R ９２ (e) The chemical structures of R bonded to the aromatic ring in formula (36) are not the same. ９１ and R ９２ and (f) o and p each independently represent an integer of 0 to 4 that is different from each other. ８９ It is preferable that the chemical structure satisfies the above condition (XS2x).

[0180] In formula (36), X ３１ and X ３２ The hydrocarbon group in the hydrocarbon group, the hydrocarbon group containing an ether bond, and the hydrocarbon group containing a carbonylamide group is preferably an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 4 to 10 carbon atoms, an arylene group having 6 to 15 carbon atoms, or an arylalkylene group having 10 to 20 carbon atoms. ３３ and X ３４ The hydrocarbon group, the hydrocarbon group containing an ether bond, the hydrocarbon group containing a carbonyloxy group, and the hydrocarbon group containing a carbonylamide group are preferably alkylene groups having 1 to 10 carbon atoms, cycloalkylene groups having 4 to 10 carbon atoms, arylene groups having 6 to 15 carbon atoms, or arylalkylene groups having 10 to 20 carbon atoms. ３１ In the hydrocarbon group containing an ether bond, the hydrocarbon group is preferably an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 4 to 10 carbon atoms, or an arylene group having 6 to 15 carbon atoms. ３１In the above, the hydrocarbon group containing a carbonyloxy group and the hydrocarbon group containing a carbonylamide group preferably have 1 to 15 carbon atoms, and the hydrocarbon group preferably has an aliphatic structure, an alicyclic structure, an aromatic structure, a fused polycyclic structure, or a fused polycyclic heterocyclic structure. The above-mentioned substituents and structures may have heteroatoms, and may be either unsubstituted or substituted.

[0181] From the viewpoint of satisfying the above condition (XS1x), (i) X ３１ and X ３２ and (j) the X bonded to the aromatic ring in formula (36) ３１ and X ３２ In addition, from the viewpoint of satisfying the above condition (XS1x), it is preferable that (k) X ３３ and X ３４ and (l) the X bonded to the aromatic ring in formula (36) ３３ and X ３４ In addition, from the viewpoint of satisfying the above condition (XS1x), it is also preferable that at least one of the following conditions is satisfied: ３１ On the other hand, from the viewpoint of satisfying the condition (XS2x), it is also preferable that the chemical structure of Y ３１ It is preferable that the chemical structure of Y satisfies the above condition (XS2x), more preferably satisfies the above condition (XS2y), and even more preferably satisfies the above condition (XS2z). ３１ It is preferable that the structure having an asymmetric axis is a biphenyl structure, a binaphthyl structure, a spiro structure, or an allene structure.

[0182] The chemical structures in the amine residues that do not have a phenolic hydroxyl group are not identical, and preferably the compared structures differ in at least one of the number of carbon atoms, the number of hydrogen atoms, the number of heteroatoms, the molecular weight, the molecular volume, and the aspect ratio.Furthermore, the chemical structures in the amine residues that do not have a phenolic hydroxyl group are not identical, and preferably the compared structures are in a relationship of structural isomerism or geometric isomerism.Furthermore, it is also preferable that the compared structures have at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis.The same applies to the following description of the structure in the amine residues that does not have a phenolic hydroxyl group.

[0183] In formula (36), Y ３１ In view of the effects of the present invention, Y in formula (36) is preferably a group represented by formula (37) or formula (38). ３１ is a group represented by formula (37) or formula (38), R in formula (36) ８９ is R bonded to an atom of the ring member in formula (37). ８４ ~R ８７ or a group corresponding to R bonded to a ring atom in formula (38) ９４ ~R ９６ is a group corresponding to

[0184]

[0185] In formula (37) and formula (38), R ８４ ~R ８７ and R ９４ ~R ９６ each independently represents a hydrocarbon group, a hydrocarbon group containing an ether bond, or a hydrocarbon group containing a carbonyl group. a, b, and c each independently represent an integer of 1 or 2. e and f each independently represent an integer from 0 to 3. g represents an integer from 0 to ((2×a)+2). h represents an integer from 0 to ((2×b)+2). i represents an integer from 0 to 3. j represents an integer from 0 to 4. k represents an integer from 0 to ((2×c)+3). * １ ~* ４ are each independently X in formula (36). ３３ or X ３４ Represents the point of attachment to

[0186] In formula (37) and formula (38), R ８４ Medium, R ８５ Medium, R ８６ Medium, R ８７ Medium, R ９４ Medium, R ９５ Naka, and R ９６ The hydrocarbon group in the hydrocarbon group, the hydrocarbon group containing an ether bond, and the hydrocarbon group containing a carbonyl group is preferably an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, or an arylalkyl group having 10 to 20 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms.

[0187] By configuring the amine residue having no phenolic hydroxyl group as described above, the amine residue having no phenolic hydroxyl group can be ２ Since the (XA) resin has an asymmetric structure without an axis of symmetry or a three-dimensionally asymmetric structure, the symmetry of the (XA) resin in the insulating resin layer is reduced. Therefore, it is considered that the orientation and stacking of the (XA) resin in the insulating resin layer is suppressed. For the same reasons as above, it is presumed that the effects of lowering the voltage required for driving the light-emitting characteristics, improving the reliability of the light-emitting device, and improving the migration resistance are significant.

[0188] The amine residue having no phenolic hydroxyl group satisfies at least one of the above conditions (XS1x) and (XS2x) from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, and has an amine residue represented by formula (36), and further, in formula (36), Y ３１ is particularly preferably a group represented by formula (37) or formula (38).

[0189] From the viewpoint of the effects of the present invention, the amine residue having no phenolic hydroxyl group preferably has an amine residue that satisfies the above condition (XS1x) and also has an amine residue that satisfies the above condition (XS2x).Furthermore, from the viewpoint of the effects of the present invention, the amine residue having no phenolic hydroxyl group preferably has an amine residue that satisfies at least one of the above conditions (XS1x) and (XS2x) and also has an amine residue that satisfies neither of the above conditions (XS1x) nor (XS2x).

[0190] By configuring the amine residue having no phenolic hydroxyl group in this manner, the amine residue having no phenolic hydroxyl group can be C ２ In addition to the asymmetric structure having no axis of symmetry or the three-dimensionally asymmetric structure, the (XA) resin has a structure different from the above structure, which reduces the symmetry of the (XA) resin in the insulating resin layer as a whole, thereby suppressing the orientation and stacking of the (XA) resin in the insulating resin layer, and it is presumed that the effects of the invention described above become significant for the same reason as above.

[0191] The (XA) resin in the insulating resin layer may further contain an amine residue other than the amine residue having a phenolic hydroxyl group and the amine residue not having a phenolic hydroxyl group, such as an alicyclic amine residue or an aliphatic amine residue.

[0192] Resins with an imide ring closure rate of 50 mol% or more in the structural units of polyimide and its precursors are classified as polyimides. On the other hand, resins with an imide ring closure rate of less than 50 mol% are classified as polyimide precursors. Similarly, resins with a benzoxazole ring closure rate of 50 mol% or more in the structural units of polybenzoxazole and its precursors are classified as polybenzoxazoles. On the other hand, resins with a benzoxazole ring closure rate of less than 50 mol% are classified as polybenzoxazole precursors. Similarly, resins with an imide ring closure rate of 50 mol% or more in the structural units of polyamideimide and its precursors are classified as polyamideimides. On the other hand, resins with an imide ring closure rate of less than 50 mol% are classified as polyamideimide precursors. Based on the above, resins that fall into two or more categories selected from the group consisting of (1) polyimide or its precursor, (2) polybenzoxazole or its precursor, and (3) polyamideimide or its precursor are classified as both resins. In other words, resins that fall into both polyimide precursors and polybenzoxazole precursors are classified as both polyimide precursors and polybenzoxazole precursors.

[0193] <Resins Different from (XA1x) Resins> In view of the effects of the invention described above, it is also preferable that the insulating resin layer of the element of the present invention contains a (XA1y) resin: a resin having a phenolic hydroxyl group in the structural unit of the resin. In view of the effects of the invention described above, it is also preferable that the (XA1) weakly acidic group-containing resin contains a (XA1y) resin. The (XA1y) resin preferably contains one or more resins selected from the group consisting of phenolic resins, polyhydroxystyrenes, phenolic group-containing epoxy resins, and phenolic group-containing acrylic resins. The (XA1y) resin may be either a single resin or a copolymer thereof.

[0194] From the viewpoint of achieving low-voltage drive with improved light-emitting properties, the (XA) resin preferably contains a (XA2) resin that does not have a weakly acidic group (hereinafter referred to as "(XA2) resin"). From the viewpoint of achieving low-voltage drive with improved light-emitting properties, the (XA2) resin preferably contains a carboxy group, a carboxylic acid anhydride group, or a sulfonic acid group, and more preferably contains one or more resins selected from the group consisting of polycyclic side chain-containing resins, acid-modified epoxy resins, and acrylic resins. The (XA2) resin may be a single resin or a copolymer thereof. From the viewpoint of improving the reliability and migration resistance of the light-emitting device, the (XA2) resin preferably contains a radically polymerizable group, and more preferably contains a radically polymerizable group in the structural unit of the resin. The radically polymerizable group preferably contains an ethylenically unsaturated double bond group, and more preferably is a photoreactive group, an alkenyl group having 2 to 5 carbon atoms, or an alkynyl group having 2 to 5 carbon atoms. The polycyclic side chain-containing resin is preferably a cardo resin having a condensed polycyclic structure, a condensed polycyclic alicyclic structure, or a condensed polycyclic heterocyclic structure. The acid-modified epoxy resin is preferably an epoxy (meth)acrylate resin having a condensed polycyclic structure, a condensed polycyclic alicyclic structure, a condensed polycyclic heterocyclic structure, or an aromatic structure. The acrylic resin preferably has a unit having a condensed polycyclic structure, a condensed polycyclic heterocyclic structure, an aromatic structure, or an epoxy group.

[0195] From the viewpoint of improving the reliability of light-emitting devices, the (XA2) resin preferably contains one or more resins selected from the group consisting of imide structures, amide structures, oxazole structures, and siloxane structures (hereinafter referred to as "imide structures, etc.") in its structural units. The (XA2) resin preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, polyamide, polysiloxane, maleimide resin, maleimide-styrene resin, maleimide-triazine resin, maleimide-oxazine resin, and copolymers thereof, and more preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, and copolymers thereof (hereinafter referred to as "polyimide-based resins without weak acidic groups"). The polyimide-based resin without weak acidic groups may also be copolymerized with polyamide. The (XA2) resin may be either a single resin or a copolymer thereof. Polyimide resins having weakly acidic groups and polyimide resins not having weakly acidic groups are sometimes collectively referred to as polyimide resins.

[0196] In addition, when the (XA1x) resin, (XA1y) resin, and (XA2) resin each have a structure or group that constitutes a different resin, they are classified into one of the classification methods shown in Table 1-1 below. When a resin can be classified into two or more of the (XA1x) resin, (XA1y) resin, and (XA2) resin, the classification method is used to determine which resin it falls into.

[0197]

[0198] <(XD) Colorant in Insulating Resin Layer> From the viewpoint of suppressing external light reflection, the insulating resin layer of the element of the present invention preferably contains an (XD) colorant. The (XD) colorant refers to a compound that imparts color by absorbing any light within the wavelength range of visible light (380 to 780 nm). The (XD) colorant is preferably a pigment or a dye. The (XD) colorant preferably contains a black agent or a mixture of two or more colorants. The black agent preferably contains an organic black pigment and / or an inorganic black pigment. The black color in the (XD) colorant is as described in paragraphs

[0284] and

[0285] of WO 2019 / 087985. The (XD) colorant in the insulating resin layer is preferably the (D) colorant described below, and a compound having a structure derived from the (D) colorant is also preferred.

[0199] From the viewpoints of achieving low-voltage operation of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the element of the present invention preferably has an insulating resin layer containing an organic black pigment and / or an inorganic black pigment, the organic black pigment comprising one or more types selected from the group consisting of benzofuranone-based black pigments, perylene-based black pigments, and azo-based black pigments, the inorganic black pigment comprising one or more types selected from the group consisting of nitrides containing a metal element, carbides containing a metal element, and oxynitrides containing a metal element, and the metal element being one or more types selected from the group consisting of zirconium, vanadium, niobium, hafnium, and tantalum. The benzofuranone-based black pigment preferably comprises a compound having at least two benzofuran-2(3H)-one structures which may share a benzene ring or at least two benzofuran-3(2H)-one structures which may share a benzene ring, a geometric isomer thereof, a salt thereof, or a salt of a geometric isomer thereof. The perylene-based black pigment preferably contains a compound having a 3,4,9,10-perylenetetracarboxylic acid bisbenzimidazole structure, a geometric isomer thereof, a salt thereof, or a salt of a geometric isomer thereof.The azo-based black pigment preferably contains a compound having an azomethine structure and a carbazole structure, or a salt thereof.

[0200] By adopting the above-described configuration, it is believed that these pigments promote the surface modification of the conductive inorganic layer at the openings of the insulating resin layer. Therefore, it is estimated that the effects of lowering the driving voltage of the light-emitting characteristics and improving the luminance of the light-emitting element are significant. Furthermore, these pigments have superior light-blocking and insulating properties per unit mass compared to general pigments, which significantly improves the reliability and migration resistance of the light-emitting element.

[0201] In the element of the present invention, from the viewpoints of achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, it is also preferable that the pigment in the insulating resin layer has a coating layer. The coating layer refers to a layer that coats the surface of the pigment, and examples thereof include a layer formed by surface treatment with a silane coupling agent or coating treatment with a resin. The coating layer preferably has one or more types selected from the group consisting of a silica coating layer, a metal oxide coating layer, and a metal hydroxide coating layer.

[0202] <(XG) Inorganic Particles in the Insulating Resin Layer> From the viewpoint of improving the reliability and migration resistance of the light-emitting device, the insulating resin layer of the element of the present invention preferably contains (XG) inorganic particles. (XG) inorganic particles refer to particles containing an element selected from the group consisting of metal elements, semi-metal elements, and semiconductor elements as a primary component. The primary component element of inorganic particles refers to the element that is most abundant by mass among the constituent elements of the inorganic particles. With this configuration, the robust structure of the (XG) inorganic particles in the insulating resin layer improves the heat resistance of the insulating resin layer and suppresses outgassing, thereby significantly improving the reliability and migration resistance of the light-emitting device.

[0203] The (XG) inorganic particles preferably contain Si, Al, Ti, V, Zn, Zr, Nb, Sn, Li, Cr, Mn, Fe, Co, Ni, Cu, Sr, Ag, Ba, La, Ce, Ta, W, or Re as their main component, and more preferably contain silicon as their main component. The main component element of the inorganic particles is determined based on the mass of any one of the above elements alone. The (XG) inorganic particles are preferably silica particles, alumina particles, titania particles, vanadium oxide particles, chromium oxide particles, iron oxide particles, cobalt oxide particles, copper oxide particles, zinc oxide particles, zirconium oxide particles, niobium oxide particles, tin oxide particles, or cerium oxide particles, and more preferably silica particles. The above configuration reduces the reflection and scattering of incident external light on the surface of the insulating resin layer, thereby significantly suppressing external light reflection.

[0204] <Compounds derived from thermal colorants or oxidative colorants in insulating resin layer> From the viewpoint of suppressing external light reflection, the element of the present invention preferably contains an insulating resin layer containing a compound having a structure derived from a thermal colorant and / or a compound having a structure derived from an oxidative colorant. Here, the structure derived from a thermal colorant and the structure derived from an oxidative colorant refer to the structures of the thermal colorant and the oxidative colorant after their structure has changed due to heating or the structures of the oxidative colorant after decomposition due to heating, respectively. As the compound having a structure derived from a thermal colorant and / or the structure derived from an oxidative colorant in the insulating resin layer, a quinone structure and / or a quinoid structure is more preferred. The structure derived from a thermal colorant and the structure derived from an oxidative colorant may include the structure of a thermal colorant or the structure of an oxidative colorant, which will be described later.

[0205] In the device of the present invention, from the viewpoints of achieving low-voltage operation of the light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the insulating resin layer preferably contains a compound having a quinone structure and / or a quinoid structure derived from a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded. Furthermore, in view of the effects of the same invention, the insulating resin layer of the device of the present invention also preferably contains a compound having a crosslinked structure (hereinafter referred to as a "specific crosslinked structure") between a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded and a compound having a structure represented by formula (11). From the viewpoint of the effects of the invention described above, the number of specific crosslinked structures in the compound having the specific crosslinked structure is preferably 2 or more, more preferably 3 or more, even more preferably 4 or more, and particularly preferably 6 or more. Meanwhile, there is no particular upper limit to the number of specific crosslinked structures, but from the viewpoint of the effects of the invention described above, it may be 20 or less.

[0206]

[0207] In formula (11), R １１ represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. １ and * ２ each independently represents a bonding point, but a carbonyl group is not adjacent to the nitrogen atom. a represents 1 or 2. b represents 0 or 1. Note that a+b=2. １ and * ２ In view of the effects of the present invention, it is preferable that at least one of the groups be a bonding point to an aromatic structure, an aromatic heterocyclic structure, a fused polycyclic structure, or a fused polycyclic heterocyclic structure. １ and * ２ are also preferably points of attachment to an aromatic structure, an aromatic heterocyclic structure, a fused polycyclic structure, or a fused polycyclic heterocyclic structure. １ and * ２At the bonding point, from the viewpoint of the effects of the invention described above, the aromatic structure is preferably a benzene structure, a biphenyl structure, or a terphenyl structure, the aromatic heterocyclic structure is preferably a triazine structure, an isocyanuric acid structure, a pyrrole structure, an imidazole structure, or a triazole structure, the fused polycyclic structure is preferably a fluorene structure or a naphthalene structure, and the fused polycyclic heterocyclic structure is preferably a carbazole structure, an indole structure, a benzimidazole structure, or a benzotriazole structure. １ and * ２ At the bonding point, the aromatic heterocyclic structure is more preferably a triazine structure.

[0208] In view of the effects of the invention described above, the compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded is preferably 1,2,4-trihydroxybenzene or pyrogallol. The compound having a structure represented by formula (11) has at least one crosslinkable group on a nitrogen atom, and the crosslinkable group is preferably an alkoxymethyl group and / or a methylol group. The alkoxymethyl group is preferably a methoxymethyl group, an ethoxymethyl group, or a butoxymethyl group, and more preferably a methoxymethyl group. In view of the effects of the invention described above, the compound having the specific crosslinked structure described above is preferably a compound having one or more structures selected from the group consisting of a structure represented by formula (12), a structure represented by formula (13), a quinone structure represented by formula (12) or formula (13), and a quinoid structure represented by formula (12) or formula (13).

[0209]

[0210] In formula (12) and formula (13), * ３ , * ４ , * ５ , and * ６ Each independently represents a point of attachment, but no carbonyl group is adjacent to the nitrogen atom. c represents 1 or 2. d represents 0 or 1. Note that c+d=2. e represents 1 or 2. f represents 0 or 1. Note that e+f=2. * ３ , * ４ , * ５ , and *６ Exemplary and preferred descriptions of * are given above. １ and * ２ As described in.

[0211] By adopting the above-mentioned configuration, it is believed that these compounds promote the surface modification action on the surface of the conductive inorganic layer at the openings of the insulating resin layer. Therefore, it is estimated that the effects of lowering the driving voltage of the light-emitting characteristics and improving the luminance of the light-emitting element are significant. Furthermore, these compounds not only contribute to improving the light-shielding properties, but also have a structure equivalent to the residue after a crosslinked structure is formed in the film by a thermal reaction. Therefore, the improved crosslinking degree in the film contributes to improving heat resistance and suppressing outgassing, thereby significantly improving the reliability and migration resistance of the light-emitting element.

[0212] <Compounds in the Insulating Resin Layer> From the viewpoints of achieving lower-voltage operation of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the element of the present invention preferably contains an insulating resin layer that contains one or more (XC1x) compounds selected from the group consisting of carboxylic acids having an indene structure, carboxylic acid esters having an indene structure, sulfonic acids having an indene structure, and sulfonic acid aryl esters having an indene structure, and / or an (XC2x) compound that has a fluorene structure, a carbazole structure, an indole structure, or a diphenyl sulfide structure, and has an imino group bonded to any of these structures and / or has a carbonyl group bonded to any of these structures. The (XC1x) compound in the insulating resin layer is more preferably a compound having a 1H-indene-3-carboxylic acid ester-7-sulfonic acid aryl ester structure and / or a compound having a 1H-indene-1-sulfonic acid aryl ester-3-carboxylic acid ester structure. The (XC1x) compound in the insulating resin layer is preferably a compound having a 1,2-naphthoquinone diazide-5-sulfonic acid ester structure and / or a compound having a 1,2-naphthoquinone diazide-4-sulfonic acid ester structure in the naphthoquinone diazide compound (C1) described below, and compounds having a structure derived from these compounds are also preferred. The (XC2x) compound in the insulating resin layer is preferably a compound having an oxime ester structure and / or a compound having an oxime ester carbonyl structure in the photopolymerization initiator (C2) described below, and compounds having a structure derived from these compounds are also preferred.

[0213] By adopting the above-mentioned configuration, it is believed that these compounds promote the surface modification action on the surface of the conductive inorganic layer at the openings of the insulating resin layer. Therefore, it is estimated that the effects of lowering the driving voltage of the light-emitting characteristics and improving the light-emitting brightness are significant. Furthermore, these compounds have a structure equivalent to the residue after forming a crosslinked structure in the film by radical polymerization and / or thermal reaction. Therefore, the improved crosslinking degree in the film contributes to improving heat resistance and suppressing outgassing, thereby significantly improving the reliability and migration resistance of the light-emitting device.

[0214] In the element of the present invention, from the viewpoints of achieving low-voltage operation of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the insulating resin layer preferably contains a nitrogen-containing compound (XH). The nitrogen-containing compound (XH) preferably contains one or more compounds selected from the group consisting of cyclic amide compounds, amide compounds, cyclic urea compounds, urea compounds, oxazolidone compounds, and isoxazolidone compounds (hereinafter referred to as "specific nitrogen-containing compounds") and satisfies the following condition (X4). When the insulating resin layer contains one or more compounds selected from the group consisting of polyimide-based resins, from the viewpoint of the effects of the invention described above, the insulating resin layer preferably contains a nitrogen-containing compound (XH), and more preferably satisfies the following condition (X4). (X4) The total content of cyclic amide compounds, amide compounds, cyclic urea compounds, urea compounds, oxazolidone compounds, and isoxazolidone compounds in the insulating resin layer is 0.010% by mass or more and 5.0% by mass or less.

[0215] In view of the effects of the present invention, the specific nitrogen-containing compound preferably contains one or more compounds selected from the group consisting of a cyclic amide compound represented by formula (20), an amide compound represented by formula (21), a cyclic urea compound represented by formula (22), a urea compound represented by formula (23), an oxazolidone compound represented by formula (24), and an isoxazolidone compound represented by formula (25).

[0216]

[0217] In formulas (20) to (25), R ４６ ~R ５６ R each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, or a hydroxyalkyl group having 1 to 6 carbon atoms. １３０ represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, a hydroxyalkoxy group having 1 to 6 carbon atoms, a hydroxy group, an amino group, a monoalkylamino group having 1 to 6 carbon atoms, or a dialkylamino group having 2 to 12 carbon atoms. １３１ ~R １４２each independently represents an alkyl group having 1 to 6 carbon atoms. α, β, and γ each independently represent an integer of 0 to 6. a, b, c, e, f, g, h, i, j, k, l, and m each independently represent an integer of 0 to 2. When α is 0, a is 0. When β is 0, b is 0. When γ is 0, c is 0. The above-mentioned substituents and structures may have heteroatoms, and may be either unsubstituted or substituted.

[0218] Specific nitrogen-containing compounds include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-butyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N,N-dimethylformamide, N,N-diethylformamide, N,N-dimethylacetamide, N,N-dimethylpropionamide, N,N-dimethylisobutyramide, and N,N-dimethyl-3-methoxypropionamide. N,N-dimethyl-3-butoxypropionamide, 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, N,N'-dimethylpropyleneurea, 1,1,3,3-tetramethylurea, 1,1,3,3-tetraethylurea, N-methyl-2-oxazolidone, N-ethyl-2-oxazolidone, N-methyl-3-isoxazolidone, or N-ethyl-3-isoxazolidone is preferred.

[0219] From the viewpoint of the effects of the present invention, the total content of the specific nitrogen-containing compounds in the insulating resin layer is preferably 0.030% by mass or more, more preferably 0.050% by mass or more, even more preferably 0.070% by mass or more, and particularly preferably 0.10% by mass or more. On the other hand, from the viewpoint of the effects of the present invention, the total content of the specific nitrogen-containing compounds is preferably 4.0% by mass or less, more preferably 3.5% by mass or less, and even more preferably 3.0% by mass or less. Furthermore, the total content of the specific nitrogen-containing compounds is preferably 2.5% by mass or less, more preferably 2.0% by mass or less, even more preferably 1.5% by mass or less, even more preferably 1.0% by mass or less, particularly preferably 0.70% by mass or less, and most preferably 0.50% by mass or less.

[0220] By adopting the above-mentioned configuration, it is believed that these compounds promote the surface modification action on the surface of the conductive inorganic layer at the openings of the insulating resin layer. Therefore, it is estimated that the effects of lowering the driving voltage of the light-emitting characteristics and improving the light-emitting brightness are significant. Furthermore, these compounds function as catalysts that promote crosslinking reactions in the film due to thermal reactions. Therefore, improving the degree of crosslinking in the film contributes to improving heat resistance and suppressing outgassing, thereby significantly improving the reliability and migration resistance of the light-emitting device.

[0221] <Light-Emitting Layer and Pixel Portion> The display device of the present invention preferably has a light-emitting layer. The light-emitting layer may be either an organic layer or an inorganic layer, or may have both an organic layer and an inorganic layer. The light-emitting layer preferably has a laminated structure formed on the first electrode and between the first electrode and the second electrode. This configuration allows for the formation of a pixel portion. The light-emitting layer preferably has an organic EL layer. The organic EL layer preferably further has one or more layers selected from the group consisting of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. An organic EL display having such a configuration is also suitable. The light-emitting layer preferably has an inorganic semiconductor layer, more preferably a micro LED or a mini LED. A micro LED display or a mini LED display is also suitable for such a configuration. The display device of the present invention preferably has a light-emitting layer portion in a planar view. The light-emitting layer portion corresponds to the light-emitting layer as viewed in a planar view. In a planar view, the pixel portion is preferably a portion on the first electrode portion at the opening of the pixel dividing layer portion and where the light-emitting layer portion is formed.

[0222] <Sealing Layer> The display device of the present invention preferably has a sealing layer from the viewpoint of improving the reliability of the light-emitting element. The sealing layer is a layer that seals the laminated structure having the light-emitting layer to isolate it from the outside world and suppress the intrusion of moisture, gas, etc. The sealing layer is preferably a cured product obtained by curing a composition, or an inorganic layer containing a metal element or silicon. The sealing layer preferably transmits visible light wavelengths.

[0223] <Color Filter Layer> The display device of the present invention preferably has a color filter layer from the viewpoint of improving luminance and suppressing reflection of external light. The color filter layer is a layer that is located on the light extraction side, away from the pixel division layer and pixel portion, and adjusts the emission spectrum and reflected light. The color filter layer is preferably colored in the wavelength range of visible light by coloring a component such as a resin in the photosensitive composition. Here, "colored" means red, orange, yellow, green, blue, or purple.

[0224] <Black Matrix Layer> From the viewpoint of suppressing reflection of external light, the display device of the present invention preferably has a black matrix layer. The black matrix layer is a layer that is located on the light extraction side, separated from the pixel division layer and pixel portion, and adjusts the light-emitting region. The black matrix layer is preferably black. The black matrix layer can be made black by coloring a component such as a resin in the photosensitive composition.

[0225] <Wavelength Conversion Layer> The display device of the present invention preferably has a wavelength conversion layer from the viewpoint of improving the luminance and color purity of emitted light. The wavelength conversion layer is a layer located on the light extraction side, separated from the pixel division layer and pixel portion, and adjusts the emission spectrum of the display device by wavelength-converting light emitted from the light-emitting layer. The wavelength conversion layer preferably contains quantum dots, a fluorescent compound, or a phosphorescent compound, and more preferably contains quantum dots. The wavelength conversion layer is also preferably formed from a composition containing quantum dots, a fluorescent compound, or a phosphorescent compound. The composition may be either a photosensitive composition or a non-photosensitive composition. When the wavelength conversion layer is included, the light-emitting layer is preferably an organic EL layer that emits blue light or white light, or an inorganic semiconductor layer that emits blue light or white light. When the wavelength conversion layer includes quantum dots, such a configuration is also suitable for quantum dot displays. When the wavelength conversion layer includes a fluorescent compound or a phosphorescent compound, such a configuration is also suitable for organic EL displays, micro LED displays, or mini LED displays.

[0226] From the viewpoints of improving luminance, improving purity of luminescent color, and suppressing reflection of external light, the display device of the present invention preferably further comprises a wavelength conversion layer and / or a color filter layer, and the wavelength conversion layer preferably contains quantum dots, a fluorescent compound, or a phosphorescent compound.

[0227] <TFT Element Layer> The display device of the present invention preferably further includes a TFT element layer. The TFT element layer more preferably includes a semiconductor layer, a source electrode, a drain electrode, a gate electrode, and a gate insulating layer. When the display device of the present invention includes a TFT element layer, it preferably further includes an interlayer insulating layer that insulates the TFT element layer from an upper conductive layer, or an interlayer insulating layer that insulates multiple upper conductive layers from each other. Examples of the semiconductor layer include a silicon semiconductor layer such as polycrystalline silicon (p-Si), an oxide semiconductor layer such as indium gallium zinc oxide (IGZO), or low temperature polycrystalline oxide (LTPO) that combines polycrystalline silicon and an oxide semiconductor.

[0228] <TFT Planarizing Layer and TFT Protective Layer> The display device of the present invention preferably further includes a TFT planarizing layer and / or a TFT protective layer. The TFT planarizing layer and the TFT protective layer preferably comprise at least two layers. In the display device of the present invention, the insulating resin layer is preferably a TFT planarizing layer, and the conductive inorganic layer is preferably a metal wiring layer. The conductive inorganic layer is preferably a metal wiring layer below the TFT planarizing layer. The TFT planarizing layer or the TFT protective layer is a layer that planarizes or protects the surface of a laminate structure including TFT elements. The TFT planarizing layer and the TFT protective layer are preferably black. The TFT planarizing layer and the TFT protective layer can be made black by coloring a component such as a resin in the photosensitive composition. From the viewpoints of suppressing external light reflection and improving luminance, the pixel portion is preferably formed so as to overlap the TFT planarizing layer and / or the TFT protective layer.

[0229] <Interlayer insulating layer> The display device of the present invention preferably further comprises an interlayer insulating layer from the viewpoint of improving the integration density by multi-layering of wiring, electrodes, etc. and improving the resolution of the display device. The interlayer insulating layer preferably comprises at least two layers. The interlayer insulating layer is a layer that insulates conductive layers such as wiring and electrodes in a laminated structure. The interlayer insulating layer is preferably an interlayer insulating layer that insulates a conductive layer below the TFT planarizing layer. The interlayer insulating layer is preferably black. The interlayer insulating layer can be made black by coloring a component such as a resin in the photosensitive composition.

[0230] <Method for forming a conductive inorganic layer or the like in which the detection intensity of each ion is within a specific range> In the element of the present invention or the display device of the present invention, methods for forming a conductive inorganic layer, a first electrode, or a metal wiring layer in which the detection intensity of fluorine ions, chlorine ions, bromine ions, or sulfur ions is within a specific range include, for example, the following methods (I) to (V). The formation method may also include two or more methods selected from the group consisting of the following methods (I) to (V). Note that elemental fluorine, elemental chlorine, elemental bromine, and elemental sulfur may sometimes be collectively referred to as elemental fluorine, etc. Furthermore, compounds having a fluorine atom or fluoride ion in their structure, components containing elemental fluorine, and components containing fluoride ions may sometimes be collectively referred to as compounds containing fluorine atoms, etc. (I) A method of forming a pattern of a composition on a conductive inorganic layer or the like using a photosensitive composition containing a compound containing fluorine atoms or the like in an amount not greater than a specific value, thereby exposing the surface of the conductive inorganic layer or the like (hereinafter referred to as "method (I)"); (II) A method of forming a coating film of a composition on a conductive inorganic layer or the like using a non-photosensitive composition containing a compound containing fluorine atoms or the like in an amount not greater than a specific value, and then patterning the resulting coating film to expose the surface of the conductive inorganic layer or the like (hereinafter referred to as "method (II)"); (III) A method of contacting a solution containing a compound containing fluorine atoms or the like with the surface of the conductive inorganic layer or the like (hereinafter referred to as "method (III)"); (IV) A method of gasifying a compound containing fluorine atoms or the like or a solution containing the gasified compound and contacting the gasified compound with the surface of the conductive inorganic layer or the like (hereinafter referred to as "method (IV)"); (V) A method of ionizing a compound containing fluorine atoms or the like or a solution or gas containing the gasified compound and contacting the surface of the conductive inorganic layer or the like (hereinafter referred to as "method (V)").

[0231] Method (I) is a method in which, when forming an insulating resin layer using a photosensitive composition, the surface of a conductive inorganic layer or the like is modified with elemental fluorine or the like during pattern formation of the photosensitive composition. As a pattern formation method, a method in which a pattern is formed by a photolithography method is preferred.

[0232] Method (II) is a method in which, when forming an insulating resin layer using a non-photosensitive composition, the surface of a conductive inorganic layer or the like is modified with elemental fluorine or the like during the formation of a coating film of the non-photosensitive composition. As a patterning method for the resulting coating film, a wet etching method or a dry etching method is preferred. A method of patterning using a photoresist, in which openings are made all at once during development of the photoresist, to pattern the coating film is also preferred.

[0233] Methods (III), (IV), and (V) are methods for modifying the surface of a conductive inorganic layer or the like using a solution, gas, and ions, respectively. Method (III) preferably uses an acidic solution containing fluoride ions, and also preferably uses hydrofluoric acid, buffered hydrofluoric acid, or fluoronitric acid. Method (IV) preferably uses chemical vapor deposition or vacuum deposition. Method (IV) preferably uses activated actinic rays in the above-mentioned gas atmosphere. Method (V) preferably uses plasma chemical vapor deposition, sputtering, or ion implantation. Method (V) preferably uses reactive gas etching, plasma etching, or reactive ion etching.

[0234] The above-mentioned forming method also preferably includes a cleaning step of the conductive inorganic layer, the first electrode, or the metal wiring layer before the steps (I) to (V) above. The cleaning step is preferably carried out by wet etching, dry etching, ashing, or a method of irradiating activated actinic rays in a gas atmosphere. The cleaning step uses the above-mentioned compounds not containing fluorine atoms or solutions or gases containing them. The solution used may be an acidic solution or an alkaline solution. The gas used may be a gas containing oxygen, ozone, nitrogen, or argon. The dry etching method may be a reactive gas etching method, a plasma etching method, or a reactive ion etching method.

[0235] <Display Devices of Third and Fourth Aspects> A display device of a third aspect of the present invention includes the element of the present invention. The display device of the third aspect of the present invention preferably further includes light-emitting elements, the conductive inorganic layer being a metal wiring layer, and the insulating resin layer being a partition layer and / or a planarization layer. Furthermore, in the display device of the third aspect of the present invention, it is preferable that the light-emitting elements and the metal wiring layer are electrically connected, the light-emitting elements are semiconductor chips, the partition layer is formed between adjacent light-emitting elements, and the planarization layer is formed so as to cover at least a portion of the light-emitting elements.

[0236] Furthermore, it is also preferable that the display device according to the fourth aspect of the present invention further includes light-emitting elements and a metal wiring layer, the conductive inorganic layer being a rewiring layer, and the insulating resin layer being an interlayer insulating layer for the rewiring layer. Furthermore, it is preferable that the display device according to the fourth aspect of the present invention is such that the light-emitting elements and the metal wiring layer and / or the light-emitting elements and the rewiring layer are electrically connected, and the light-emitting elements are semiconductor chips. Furthermore, in the display device according to the fourth aspect of the present invention, from the viewpoint of improving integration density and suppressing transmission loss between wirings, it is preferable that the area of ​​the rewiring layer is larger than the area of ​​the light-emitting elements in a planar view.

[0237] The display device according to the third and fourth aspects of the present invention may be, for example, a micro LED display or a mini LED display.

[0238] FIG. 2 is a schematic cross-sectional view showing an example of a display device 30A having an interlayer insulating layer, a partition layer, and a planarizing layer. The display device 30A includes a plurality of light-emitting elements 31 and a plurality of partition layers 40 on an opposing substrate 34. A planarizing layer 41 is provided on the light-emitting elements 31, and an interlayer insulating layer 32 is provided on the planarizing layer 41. The light-emitting elements 31 are preferably semiconductor chips. "On the light-emitting elements 31" does not necessarily mean the surface of the light-emitting elements 31, but may also mean the support substrate or the upper side of the light-emitting elements 31. In the embodiment shown in FIG. 2, a partition layer 40 is provided between adjacent light-emitting elements 31, a planarizing layer 41 is formed to cover the light-emitting elements 31, and a plurality of interlayer insulating layers 32 are stacked on the planarizing layer 41. However, the interlayer insulating layer 32 may be a single layer. The light-emitting element 31 has a pair of electrode terminals 35 on the surface opposite to the surface in contact with the counter substrate 34, and each electrode terminal 35 is electrically connected to a metal wiring 33 extending through the planarization layer 41 and the interlayer insulating layer 32. Note that the metal wirings 33 are configured to maintain electrical insulation because, when covered by the planarization layer 41 or the interlayer insulating layer 32, these layers function as insulating films. The metal wiring is configured to maintain electrical insulation when the portions of the metal wiring that require electrical insulation are covered by a cured product formed by curing a resin-containing composition. Furthermore, the light-emitting element 31 is electrically connected to a driving element 37 provided on a light-emitting element driving substrate 36 located opposite the counter substrate 34 via the metal wiring 33 and metal wiring 33c, thereby controlling the light emission of the light-emitting element 31. The light-emitting element driving substrate 36 is also electrically connected to the metal wiring 33 via solder bumps 39. Furthermore, a barrier metal 38 is provided to prevent diffusion of metals such as the metal wiring 33. The metal wiring 33c may penetrate the light-emitting element drive substrate 36 and be electrically connected to the drive element 37. In the display device 30A, the side of the light-emitting element 31 that contacts the opposing substrate 34 (the lower side in FIG. 2) is the light extraction side. From the perspective of improving the reliability of the light-emitting element, the display device 30A is preferably manufactured in a chip-first (RDL-last) structure in which the light-emitting element 31, which is a semiconductor chip, is disposed on a support substrate or the like, and then the metal wiring 33 and the interlayer insulating layer 32 are formed.Thereafter, the light emitting element driving substrate 36 is bonded, and then, after the support substrate and the like are peeled off, the opposing substrate 34 is preferably attached.

[0239] On the other hand, from the viewpoint of suppressing a decrease in panel yield, shortening process time, and improving productivity, it is also preferable that the display device 30A be manufactured in an RDL-first (chip-last) structure in which metal wiring 33 and an interlayer insulating layer 32 are formed on a light-emitting element drive substrate 36, and then light-emitting elements 31, which are semiconductor chips, are arranged. After that, it is preferable that an opposing substrate 34 is bonded.

[0240] The light-emitting element 31 is preferably a PN junction diode in which a P-type semiconductor and an N-type semiconductor are joined. The light-emitting element 31 preferably has a side length of 5 to 700 μm, more preferably 5 to 100 μm. The interlayer insulating layer 32, the partition wall layer 40, and the planarizing layer 41 are preferably made of a cured product of a patterned photosensitive composition. A configuration in which the thickness of the planarizing layer 41 is greater than the thickness of the partition wall layer 40 is also preferred. A configuration in which the planarizing layer 41 covers a portion of the surface of the partition wall layer 40 opposite the surface that contacts the opposing substrate 34 is also preferred, and a configuration in which the planarizing layer 41 covers the entire surface of the partition wall layer 40 opposite the surface that contacts the opposing substrate 34 is more preferred. It is also preferred that one or more selected from the group consisting of the interlayer insulating layer 32, the partition wall layer 40, and the planarizing layer 41 are made of a cured product of the photosensitive composition of the present invention described below. From the viewpoint of improving mechanical properties, the interlayer insulating layer 32 more preferably contains the above-mentioned polyimide-based resin. The inclusion of the polyimide resin suppresses warpage of wafers and substrates, significantly improving the accuracy of exposure processes and wafer and substrate transport processes, and suppressing yield declines. From the viewpoints of suppressing external light reflection and improving the reliability of light-emitting elements, the partition layer 40 preferably contains the colorant (XD) described above. From the viewpoints of improving light-emitting brightness and improving the reliability of light-emitting elements, the partition layer 40 preferably contains the inorganic particles (XG) described above.

[0241] <Electronic component and hollow structure> The electronic component of the present invention includes the element of the present invention. In the electronic component of the present invention, the conductive inorganic layer is preferably a metal wiring layer, and the insulating resin layer is preferably an insulating layer for the metal wiring, a protective layer for the metal wiring, or an interlayer insulating layer for the metal wiring. Examples of the electronic component include a semiconductor device, an antenna, a metal-clad laminate, a wiring board, a semiconductor package, an active component including a semiconductor device, or a passive component.

[0242] The hollow structure of the present invention comprises the element of the present invention. The electronic component of the present invention preferably has a hollow structure. The hollow structure of the present invention also has a hollow structure support material and a hollow structure roofing material. In the hollow structure of the present invention, the insulating resin layer is preferably a hollow structure support material or a hollow structure roofing material, and the conductive inorganic layer is preferably a metal electrode or a metal wiring layer. From the viewpoint of improving heat resistance and reliability, the hollow structure support material and the hollow structure roofing material preferably contain the above-mentioned polyimide-based resin. Examples of electronic components having hollow structures include MEMS (Micro Electro Mechanical Systems).

[0243] <Semiconductor Device> The semiconductor device of the present invention comprises the element of the present invention. The semiconductor device of the present invention further comprises a semiconductor chip and an encapsulant covering the semiconductor chip, preferably wherein the conductive inorganic layer is a rewiring layer and the insulating resin layer is an interlayer insulating layer for the rewiring layer. Furthermore, in terms of improving integration density and suppressing transmission loss between wiring, the area of ​​the rewiring layer is preferably larger than the area of ​​the semiconductor chip in a planar view. The encapsulant covering the semiconductor chip preferably directly contacts the interlayer insulating layer for the rewiring layer. Furthermore, in terms of improving heat resistance and reliability, the encapsulant covering the semiconductor chip preferably contains an epoxy resin, more preferably a cured epoxy resin. Examples of semiconductor devices include semiconductor devices having a fan-out wafer-level package structure, a fan-out panel-level package structure, or an antenna-in-package structure. These package structures in the semiconductor device of the present invention may be either a single-die or multi-die structure, with a multi-die structure being preferred from the perspectives of improving integration density and suppressing transmission loss between wiring. The structure including the multi-die preferably has a chiplet structure, and more preferably includes one or more types of die selected from the group consisting of logic, memory, analog IC (analog integrated circuit), RF circuit (radio frequency circuit), and power semiconductor, and even more preferably includes two or more types of die.

[0244] FIG. 3 shows a schematic cross-sectional view of an example of a pad portion of a semiconductor device 10A having bumps. On a silicon substrate 11 of the semiconductor device 10A, a passivation layer 13 is formed on an Al pad 12 for input / output, and via holes are formed in the passivation layer 13. An insulating layer 14, which is a cured product of a patterned photosensitive composition, is formed on the passivation layer 13. Furthermore, a metal layer 15, such as Cr or Ti, is formed to connect to the Al pad 12, and metal wiring 16, such as Al or Cu, is formed by electroplating or the like. The metal layer 15 is etched around the solder bumps 20 to insulate each pad. A barrier metal layer 18 and the solder bumps 20 are formed on the insulated pads. An insulating layer 17, which is a cured product of a patterned photosensitive composition, is formed on the metal wiring 16. The photosensitive composition forming the insulating layer 17 can be patterned into a thick film to form a scribe line 19. It is also preferable that insulating layer 14 and / or insulating layer 17 be a cured product of the photosensitive composition of the present invention, which will be described later. When insulating layer 14 and / or insulating layer 17 contain the polyimide-based resin, they have excellent mechanical properties when heated at low temperatures, thereby suppressing wafer warpage and significantly improving the accuracy of processes such as exposure and wafer transportation. Furthermore, they can also mitigate stress in the encapsulating resin during semiconductor packaging, thereby suppressing damage to the low-k layer and significantly improving the reliability of the semiconductor device.

[0245] <Other Electronic Articles> The antenna of the present invention includes the element of the present invention. In the antenna of the present invention, the conductive inorganic layer is preferably a metal wiring or a ground wiring, and the insulating resin layer is preferably an insulating layer for the metal wiring, a protective layer for the metal wiring, or an interlayer insulating layer between the metal wiring and the ground wiring. Examples of the antenna include a microstrip line antenna and a strip line antenna.

[0246] The metal-clad laminate of the present invention includes the element of the present invention. In the metal-clad laminate of the present invention, the conductive inorganic layer is preferably a metal wiring, and the insulating resin layer is preferably an insulating layer for the metal wiring, a protective layer for the metal wiring, or a solder resist layer for the metal wiring. Examples of the metal-clad laminate include a printed circuit board.

[0247] <Photosensitive Composition> The photosensitive composition of the present invention will be described below. However, the present invention is not limited to the following embodiments, and various modifications are possible as long as the object of the invention can be achieved and the gist of the invention is not deviated from.

[0248] The photosensitive composition of the present invention has the following constitution.

[0249] A photosensitive composition comprising (A) a binder resin and (C) a photosensitizer, and further comprising (B) a radically polymerizable compound and / or (F) a crosslinking agent, wherein the (A) binder resin comprises (A1) a weakly acidic group-containing resin, and the (A1) weakly acidic group-containing resin has (WA) a weakly acidic group: one or more groups selected from the group consisting of a phenolic hydroxyl group, a hydroxyimide group, a hydroxyamide group, a silanol group, and a mercapto group, and the photosensitive composition satisfies the following condition (1a): The photosensitive composition further contains water and satisfies the following condition (3): (1a) the content of elemental fluorine in the total solids content of the photosensitive composition is 1,000 ppm by mass or less, and (3) the content of water in the photosensitive composition is 0.010% by mass or more and 3.0% by mass or less.

[0250] By adopting the above-described configuration, the photosensitive composition of the present invention can suppress residue after development, has excellent light-emitting properties that allow low-voltage operation to obtain a desired current density, and can produce a cured product suitable for use in a display device with excellent light-emitting device reliability. In addition, a cured product suitable for use in an electronic component or semiconductor device with excellent migration resistance can be produced. This is because by controlling the content of compounds containing fluorine atoms, etc. in the photosensitive composition to a specific value or less, the content of fluorine elements, fluoride ions, or anions containing fluorine elements derived from these components in these components is controlled to a specific value or less. It is believed that this causes local activation of protons in the photosensitive composition due to interactions such as hydrogen bonding between the components in the photosensitive composition. Therefore, it is believed that the effect of promoting dissolution in the developer is effective in suppressing residue after development. Furthermore, it is believed that the surface modification of the substrate by these components prevents residue adhesion at the openings, thereby suppressing residue after development, and significantly improving the light-emitting properties, lowering the voltage required for operation, and improving the luminance. Furthermore, by incorporating a specific amount of water into the photosensitive composition, hydrogen bonds between water molecules and fluorine atoms are formed, which is thought to improve the stability of the above-mentioned fluorine-containing components and fluorine-containing anions in the photosensitive composition, thereby contributing to the successful effect of suppressing residues after development.

[0251] Furthermore, intentionally setting the content of compounds containing fluorine atoms or the like in the photosensitive composition to a specific value or less is thought to adjust the detection intensity of these ions on the surface of the resulting cured product, thereby controlling the polarization structure and charge balance in the cured product. As a result, it is thought that by suppressing ion migration and electromigration caused by metal impurities and ionic impurities that adversely affect light-emitting properties or electrical insulation, high reliability or excellent migration resistance of light-emitting elements is achieved. Furthermore, suppression of migration and aggregation of metals in electrodes or metal wiring is thought to contribute to high reliability in display devices, electronic components, and semiconductor devices.

[0252] The total solid content of the composition refers to the sum of the masses of all components in the composition excluding the solvent. The solid content concentration can be calculated by heating 1 g of the composition at 150°C for 30 minutes to evaporate to dryness, measuring the mass remaining after heating, and calculating the solid content concentration from the masses before and after heating.

[0253] <(A) Binder Resin> The photosensitive composition of the present invention contains (A) binder resin. The (A) binder resin is preferably a resin that hardens by forming a crosslinked structure through a reaction. The reaction may be by heating, by irradiation with energy rays, or the like, and is not particularly limited. A crosslinked structure may also be formed by a (F) crosslinking agent, which will be described later. The (A) binder resin preferably has heat resistance such that at least a portion of the binder resin or the cured product thereof remains in the cured product obtained by curing the composition. The (A) binder resin is preferably a thermosetting resin.

[0254] The (A) binder resin is preferably a resin that can form a positive or negative pattern by imparting positive or negative photosensitivity to the composition with the (C) photosensitizer described below. The (A) binder resin is more preferably an alkali-soluble resin having an acidic group in the structural unit of the resin or an organic solvent-soluble resin having an organic solvent-soluble structure. From the viewpoint of improving sensitivity during exposure, the (A) binder resin preferably has a radical polymerizable group, and more preferably has a radical polymerizable group in the structural unit of the resin. The radical polymerizable group is preferably a group having an ethylenically unsaturated double bond group, and more preferably a photoreactive group, an alkenyl group having 2 to 5 carbon atoms, or an alkynyl group having 2 to 5 carbon atoms.

[0255] In the photosensitive composition of the present invention, the binder resin (A) contains a weakly acidic group-containing resin (A1), and the weakly acidic group-containing resin (A1) contains a weakly acidic group (WA): one or more groups selected from the group consisting of a phenolic hydroxyl group, a hydroxyimide group, a hydroxyamide group, a silanol group, and a mercapto group. The weakly acidic group-containing resin (A1) preferably contains a resin (A1x): a resin having one or more structures selected from the group consisting of an imide structure, an amide structure, an oxazole structure, and a siloxane structure (hereinafter referred to as "imide structure, etc.") in its structural unit, and / or a resin (A1y): a resin having a phenolic hydroxyl group in its structural unit.

[0256] The (A1) weakly acidic group-containing resin preferably contains an (A1x) resin from the viewpoints of achieving lower-voltage operation of light-emitting characteristics, improving the reliability of light-emitting devices, and improving migration resistance. The (A1x) resin preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, polyamide, polysiloxane, maleimide resin, maleimide-styrene resin, maleimide-triazine resin, maleimide-oxazine resin, and copolymers thereof, and more preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, and copolymers thereof (hereinafter referred to as "polyimide-based resin having a weakly acidic group"). The polyimide-based resin having a weakly acidic group may also be a copolymer with a polyamide. The (A1x) resin may be either a single resin or a copolymer thereof.

[0257] From the viewpoints of suppressing residue after development, improving the reliability of the light-emitting device, and improving migration resistance, it is also preferable that the weakly acidic group-containing resin (A1) contains an (A1y) resin. The (A1y) resin preferably contains one or more resins selected from the group consisting of phenolic resins, polyhydroxystyrenes, phenolic group-containing epoxy resins, and phenolic group-containing acrylic resins. The (A1y) resin may be either a single resin or a copolymer thereof.

[0258] From the viewpoint of suppressing residue after development, the (A) binder resin preferably contains (A2) a resin without a weakly acidic group (hereinafter referred to as "(A2) resin"). From the viewpoint of suppressing residue after development, the (A2) resin preferably contains a carboxy group, a carboxylic acid anhydride group, or a sulfonic acid group, and more preferably contains one or more resins selected from the group consisting of cardo resins, epoxy (meth)acrylate resins, and acrylic resins. The (A2) resin may be either a single resin or a copolymer thereof. From the viewpoint of improving sensitivity during exposure, the (A2) resin preferably contains a radically polymerizable group, and more preferably contains a radically polymerizable group in the structural unit of the resin. Examples and preferred descriptions of the radically polymerizable group are as described above for the (A) binder resin.

[0259] From the viewpoint of improving the reliability of the light-emitting device, the (A2) resin preferably contains one or more resins selected from the group consisting of imide structures, amide structures, oxazole structures, and siloxane structures (hereinafter referred to as "imide structures, etc.") in its structural units. The (A2) resin preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, polyamide, polysiloxane, maleimide resin, maleimide-styrene resin, maleimide-triazine resin, maleimide-oxazine resin, and copolymers thereof, and more preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, and copolymers thereof (hereinafter referred to as "polyimide-based resins without weak acidic groups"). The polyimide-based resin without weak acidic groups may also be copolymerized with polyamide. The (A2) resin may be either a single resin or a copolymer thereof. Polyimide resins having weakly acidic groups and polyimide resins not having weakly acidic groups are sometimes collectively referred to as polyimide resins.

[0260] <(B) Radically Polymerizable Compound> The photosensitive composition of the present invention further contains a (B) radically polymerizable compound (hereinafter referred to as "(B) compound") and / or a (F) crosslinking agent. The (B) radically polymerizable compound refers to a compound having a radically polymerizable group. Examples and preferred descriptions regarding the radically polymerizable group are as described above for the (A) binder resin. As the radically polymerizable group, a (meth)acryloyl group is preferred from the viewpoint of improving sensitivity during exposure. The number of radically polymerizable groups possessed by the (B) compound is preferably 2 or more, more preferably 3 or more, and even more preferably 4 or more, from the viewpoint of improving sensitivity during exposure. Meanwhile, the number of radically polymerizable groups is preferably 12 or less, more preferably 10 or less, even more preferably 8 or less, and particularly preferably 6 or less, from the viewpoint of suppressing residues after development.

[0261] The crosslinking agent (F) will be described later.

[0262] <(C) Photosensitizer> The photosensitive composition of the present invention contains a (C) photosensitizer. The (C) photosensitizer refers to a compound that undergoes bond cleavage, reaction, or structural change upon exposure to generate another compound, thereby imparting positive or negative photosensitivity to the composition. The (C) photosensitizer preferably includes one or more compounds selected from the group consisting of a (C1) naphthoquinone diazide compound (hereinafter, "(C1) compound"), a (C2) photopolymerization initiator (hereinafter, "(C2) compound"), a (C3) photoacid generator (hereinafter, "(C3) compound"), and a (C4) photobase generator (hereinafter, "(C4) compound"). The (C1) compound refers to a compound that undergoes structural change upon exposure to generate an indene carboxylic acid and / or sulfoindene carboxylic acid. The (C2) compound refers to a compound that undergoes bond cleavage and / or reaction upon exposure to generate a radical. The (C3) compound refers to a compound that undergoes bond cleavage and / or reaction upon exposure to generate an acid. The (C4) compound refers to a compound that generates a base by bond cleavage and / or reaction upon exposure to light. The (C1) compound is not included in the (C3) compound.

[0263] From the viewpoints of improving sensitivity during exposure, suppressing residue after development, and improving resolution after development, the (C1) compound preferably contains a compound having a 1,2-naphthoquinone diazide-5-sulfonic acid ester structure (hereinafter "5-ester structure") and / or a compound having a 1,2-naphthoquinone diazide-4-sulfonic acid ester structure (hereinafter "4-ester structure"), and more preferably contains a compound having a 5-ester structure and a compound having a 4-ester structure. The (C1) compound preferably has a 5-ester structure of a phenolic hydroxyl group or a 4-ester structure of a phenolic hydroxyl group. From the viewpoints of improving sensitivity during exposure, improving reliability of the light-emitting device, and improving migration resistance, the (C2) compound preferably contains a compound having an oxime ester structure (hereinafter "α-oxime structure") and / or a compound having an oxime ester carbonyl structure (hereinafter "β-oxime structure").

[0264] <(F) Crosslinking Agent> The (F) crosslinking agent refers to a compound having a crosslinkable group, a cationically polymerizable group, or an anionically polymerizable group capable of reacting with a resin or the like. From the viewpoint of improving the reliability and migration resistance of the light-emitting device, the (F) crosslinking agent preferably has one or more groups selected from the group consisting of an alkoxyalkyl group, a hydroxyalkyl group, an epoxy group, an oxetanyl group, and a blocked isocyanate group (hereinafter referred to as "specific crosslinkable group"). The alkoxyalkyl group is preferably an alkoxymethyl group or an alkoxyethyl group, more preferably a methoxymethyl group or a methoxyethyl group. The hydroxyalkyl group is preferably a methylol group or an ethylol group. From the viewpoint of improving the reliability and migration resistance of the light-emitting device, the number of specific crosslinkable groups possessed by the (F) crosslinking agent is preferably 2 or more, more preferably 3 or more, even more preferably 4 or more, and particularly preferably 6 or more. On the other hand, from the viewpoint of suppressing residue after development, the number of specific crosslinkable groups is preferably 12 or less, more preferably 10 or less, and even more preferably 8 or less.

[0265] <(D) Colorant, Thermal Colorant, Oxidative Colorant, (E) Dispersant, and (G) Inorganic Particles> From the viewpoint of suppressing reflection of external light, it is also preferable that the photosensitive composition of the present invention further contains a (D) colorant. The (D) colorant refers to a compound that imparts color by absorbing any light within the wavelength range of visible light (380 to 780 nm). The (D) colorant is preferably a pigment or a dye. The (D) colorant preferably contains a black agent or a mixture of two or more colorants. The black agent preferably contains an organic black pigment and / or an inorganic black pigment.

[0266] From the viewpoint of suppressing external light reflection, the photosensitive composition of the present invention preferably further contains a thermal colorant and / or an oxidative colorant. A thermal colorant is a compound that becomes colored by absorbing any light within the wavelength range of visible light (380 to 780 nm) after heating in an inert atmosphere. An oxidative colorant is a compound that becomes colored by absorbing any light within the wavelength range of visible light (380 to 780 nm) after heating in an oxygen-containing gas atmosphere. The thermal colorant and oxidative colorant are preferably compounds having a structure that undergoes structural change or decomposition after heating. The thermal colorant and oxidative colorant preferably contain a compound having an aromatic structure to which at least two phenolic hydroxyl groups are bonded, and more preferably contain a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded.

[0267] From the viewpoint of improving the dispersion stability of the pigment, the photosensitive composition of the present invention preferably further contains a dispersant (E). The dispersant (E) refers to a compound having a structure that interacts with the pigment surface and a structure that inhibits the approach of pigment particles to each other. The dispersant (E) preferably has a basic group, an acidic group, or a salt structure thereof, and more preferably has a basic group or a salt structure thereof.

[0268] From the viewpoint of improving the reliability and migration resistance of the light-emitting device, the photosensitive composition of the present invention preferably further contains (G) inorganic particles. (G) Inorganic particles refer to particles containing an element selected from the group consisting of a metal element, a metalloid element, and a semiconductor element as a main component element. The main component element in inorganic particles refers to the element that is contained in the largest amount by mass among the constituent elements of the inorganic particles. (G) Inorganic particles preferably have hydroxy groups and / or silanol groups on the particle surface. (G) Inorganic particles preferably contain silica particles from the viewpoint of suppressing external light reflection.

[0269] <Fluorine Element Content> From the viewpoints of suppressing residues after development, achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the photosensitive composition of the present invention preferably satisfies the following condition (1a) described below. From the viewpoint of the effects of the present invention described above, the photosensitive composition of the present invention more preferably satisfies the following condition (2a) described below.

[0270] The photosensitive composition of the present invention preferably has (A) the binder resin, (C) the photosensitizer, (B) the radical polymerizable compound, or (F) the crosslinking agent having a fluorine atom or a fluoride ion in its structure, or the photosensitive composition further contains a component containing elemental fluorine and / or a component containing fluoride ion, and satisfies the following condition (1a): The photosensitive composition of the present invention more preferably further satisfies the following condition (2a): (1a) the content of elemental fluorine in the total solid content of the photosensitive composition is 1,000 ppm by mass or less, and (2a) the content of fluoride ions in the total solid content of the photosensitive composition is 1,000 ppm by mass or less.

[0271] As a component containing elemental fluorine, a phenol compound, a fluorinated alkyl compound, a fluorinated cycloalkyl compound, or a fluorinated aryl compound having a substituent containing a fluorinated alkyl group is preferred. As a component containing a fluoride ion, a component containing an ammonium ion, a primary ammonium ion, a secondary ammonium ion, a tertiary ammonium ion, or a quaternary ammonium ion as a cationic species is preferred. The quaternary ammonium ion preferably has a linear or branched hydrocarbon group. The hydrocarbon group is preferably an alkyl group having 1 to 15 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group having 6 to 15 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, or a hydroxyalkyl group having 1 to 6 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms.

[0272] The content of elemental fluorine in the total solid content of the photosensitive composition is preferably 0 ppm by mass or more, more preferably 0.010 ppm by mass or more, even more preferably 0.030 ppm by mass or more, even more preferably 0.050 ppm by mass or more, particularly preferably 0.070 ppm by mass or more, and most preferably 0.10 ppm by mass or more, from the viewpoint of suppressing residues after development, achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance. On the other hand, from the viewpoint of the effects of the present invention, the content of elemental fluorine is preferably 1,000 ppm by mass or less, more preferably 500 ppm by mass or less, even more preferably 300 ppm by mass or less, and particularly preferably 100 ppm by mass or less. Furthermore, the fluorine content is preferably 50 ppm by mass or less, more preferably 30 ppm by mass or less, even more preferably 10 ppm by mass or less, even more preferably 5 ppm by mass or less, particularly preferably 3 ppm by mass or less, and most preferably 1 ppm by mass or less.

[0273] The preferred range of the content of fluoride ions in the total solid content of the photosensitive composition is the same as the preferred range of the content of elemental fluorine in the total solid content of the photosensitive composition described above.

[0274] The content of elemental fluorine in the total solid content of the photosensitive composition may be 0 ppm by mass. The content of fluoride ions in the total solid content of the photosensitive composition may also be 0 ppm by mass. When the content of elemental fluorine and / or fluoride ions in the total solid content of the photosensitive composition exceeds 0 ppm by mass, the photosensitive composition of the present invention preferably contains a fluorine atom or a fluoride ion in the structure of the (A) binder resin, the (C) photosensitizer, the (B) compound, or the (F) crosslinking agent, or the photosensitive composition further contains a component containing elemental fluorine and / or a component containing fluoride ions.

[0275] In addition, if the storage stability of the photosensitive composition is poor, for example, generation of foreign matter after storage at room temperature may become an issue. If foreign matter is generated during storage of the photosensitive composition, when forming an insulating resin layer or the like in the element of the present invention, the foreign matter will remain in the insulating resin layer or in the pattern opening. Such foreign matter can, for example, cause a decrease in the reliability of the light-emitting element in the display device of the present invention or a decrease in the migration resistance of the electronic component of the present invention. By setting the content of fluorine element in the total solid content of the photosensitive composition of the present invention to a specific range, generation of foreign matter during storage is suppressed, and the effect of improving storage stability is significantly achieved.

[0276] <Contents of chlorine, bromine, and sulfur> From the viewpoints of suppressing residues after development, achieving low-voltage driving of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance, the photosensitive composition of the present invention preferably satisfies at least one of the following conditions (1b), (1c), and (1d) described below. From the viewpoint of the effects of the present invention, the photosensitive composition of the present invention more preferably satisfies at least one of the following conditions (2b), (2c), and (2d) described below.

[0277] From the viewpoints of suppressing residues after development, achieving low-voltage driving of light-emitting characteristics, improving the reliability of light-emitting devices, and improving migration resistance, it is preferred that the photosensitive composition of the present invention has, in its structure, a chlorine atom, a bromine atom, a sulfur atom, a chloride ion, a bromide ion, or the following sulfur-based anion, or that the photosensitive composition further contains a component containing a chlorine element, a bromine element, or a sulfur element and / or a component containing a chloride ion, a bromide ion, or the following sulfur-based anion, and that the composition satisfies at least one of the following conditions (1b), (1c), and (1d): Sulfur-based anion: one or more ions selected from the group consisting of sulfide ion, hydrogen sulfide ion, sulfate ion, and hydrogen sulfate ion. (1b) The content of chlorine element in the total solid content of the photosensitive composition is 0.010 ppm by mass or more and 1,000 ppm by mass or less. (1c) The content of bromine element in the total solid content of the photosensitive composition is 0.010 ppm by mass or more and 1,000 ppm by mass or less. (1d) The content of sulfur element in the total solid content of the photosensitive composition is 0.010 ppm by mass or more and 1,000 ppm by mass or less.

[0278] In view of the effects of the invention described above, the photosensitive composition of the present invention more preferably satisfies at least one of the following conditions (2b), (2c), and (2d): (2b) the chloride ion content relative to the total solid content of the photosensitive composition is 0.010 ppm by mass or more and 1,000 ppm by mass or less, (2c) the bromide ion content relative to the total solid content of the photosensitive composition is 0.010 ppm by mass or more and 1,000 ppm by mass or less, and (2d) the sulfur-based anion content relative to the total solid content of the photosensitive composition is 0.010 ppm by mass or more and 1,000 ppm by mass or less.

[0279] As the component containing chlorine or bromine, a phenol compound having a substituent containing an alkyl chloride, an alkyl chloride compound, a cycloalkyl chloride compound, an aryl chloride compound, a phenol compound having a substituent containing an alkyl bromide, an alkyl bromide compound, a cycloalkyl bromide compound, or an aryl bromide compound is preferred. As the component containing sulfur, a thiol compound, a sulfide compound, a disulfide compound, a sulfoxide compound, a sulfone compound, a sultone compound, or a thiophene compound is preferred. Examples and preferred descriptions of the cation species in the component containing chloride ions, bromide ions, and sulfur-based anions are as described above for the component containing fluoride ions.

[0280] From the viewpoint of the effects of the present invention, the content of chlorine element in the total solid content of the photosensitive composition is preferably 0.010 mass ppm or more, more preferably 0.030 mass ppm or more, even more preferably 0.050 mass ppm or more, even more preferably 0.070 mass ppm or more, and particularly preferably 0.10 mass ppm or more. On the other hand, from the viewpoint of the effects of the present invention, the content of chlorine element is preferably 1,000 mass ppm or less, more preferably 500 mass ppm or less, even more preferably 300 mass ppm or less, and particularly preferably 100 mass ppm or less. Furthermore, the content of chlorine element is preferably 50 mass ppm or less, more preferably 30 mass ppm or less, even more preferably 10 mass ppm or less, even more preferably 5 mass ppm or less, particularly preferably 3 mass ppm or less, and most preferably 1 mass ppm or less.

[0281] The preferred ranges of the content of elemental bromine, elemental sulfur, chloride ion, bromide ion, and sulfur-based anion in the total solid content of the photosensitive composition are the same as the preferred ranges of the content of elemental chlorine in the total solid content of the photosensitive composition described above.

[0282] The content of one or more selected from the group consisting of elemental chlorine, elemental bromine, and elemental sulfur relative to the total solid content of the photosensitive composition may be 0 ppm by mass. The content of one or more selected from the group consisting of chloride ions, bromide ions, and sulfur-based anions relative to the total solid content of the photosensitive composition may also be 0 ppm by mass. When the content of one or more selected from the group consisting of elemental chlorine, elemental bromine, elemental sulfur, chloride ions, bromide ions, and sulfur-based anions relative to the total solid content of the photosensitive composition (hereinafter referred to as "content of elemental chlorine, chloride ions, etc. relative to the total solid content of the photosensitive composition") exceeds 0 ppm by mass, the photosensitive composition of the present invention preferably contains a chlorine atom, a bromine atom, a sulfur atom, a chloride ion, a bromide ion, or the following sulfur-based anions in its structure. When the content of chlorine element or chloride ion in the total solid content of the photosensitive composition exceeds 0 ppm by mass, the photosensitive composition of the present invention preferably further contains a component containing chlorine element, bromine element, or sulfur element and / or a component containing chloride ion, bromide ion, or the following sulfur-based anion.

[0283] <Water Content> The photosensitive composition of the present invention further contains water and satisfies the following condition (3): (3) The content of water in the photosensitive composition is 0.010% by mass or more and 3.0% by mass or less.

[0284] The water content in the photosensitive composition is preferably 0.010% by mass or more, more preferably 0.030% by mass or more, even more preferably 0.050% by mass or more, even more preferably 0.070% by mass or more, and particularly preferably 0.10% by mass or more, from the viewpoints of suppressing residue after development, achieving low-voltage operation of light-emitting characteristics, improving the reliability of the light-emitting device, and improving migration resistance. On the other hand, from the viewpoint of the effects of the invention described above, the water content is preferably 3.0% by mass or less, more preferably 2.5% by mass or less, even more preferably 2.2% by mass or less, and particularly preferably 2.0% by mass or less. Furthermore, the water content is preferably 1.7% by mass or less, more preferably 1.5% by mass or less, even more preferably 1.2% by mass or less, even more preferably 1.0% by mass or less, particularly preferably 0.70% by mass or less, and most preferably 0.50% by mass or less.

[0285] As described above, poor storage stability of the photosensitive composition can lead to reduced reliability of the light-emitting device and reduced migration resistance. By setting the water content of the photosensitive composition of the present invention within a specific range, generation of foreign matter during storage is suppressed, and the effect of improving storage stability is significantly achieved.

[0286] <Other Additives and Solvents> The photosensitive composition of the present invention preferably further contains a dissolution promoter, a sensitizer, a chain transfer agent, a polymerization inhibitor, a silane coupling agent, an ink repellent, or a surfactant. Known additives may be used as these additives. The photosensitive composition of the present invention preferably further contains a solvent. When the photosensitive composition of the present invention contains a pigment and further contains a dispersant, the solvent is preferably a compound having an acetate bond, a propionate bond, or a butyrate bond, from the viewpoint of improving the dispersion stability of the pigment.

[0287] <Cured Product of Photosensitive Composition> The cured product of the present invention is obtained by curing the photosensitive composition of the present invention. Curing refers to the formation of a crosslinked structure by a reaction, resulting in the loss of fluidity of the film, or the state in which this occurs. The curing reaction may be by heating, by irradiation with energy rays, or the like, but is not particularly limited; however, a curing reaction by heating is preferred. A state in which a crosslinked structure is formed in the components constituting the photosensitive composition by heating, resulting in the loss of fluidity of the film, is called thermal curing. Preferred heating conditions include, for example, heating at 150 to 500°C for 5 to 300 minutes.

[0288] The cured product of the present invention is preferably black. From the viewpoint of suppressing external light reflection and improving the reliability of the light-emitting device, the optical density at the wavelength of visible light per 1 μm of film thickness of the cured product of the present invention is preferably 0.5 or more, more preferably 0.7 or more, even more preferably 1.0 or more, even more preferably 1.2 or more, and particularly preferably 1.5 or more. On the other hand, from the viewpoint of achieving low-voltage driving of the light-emitting characteristics, the optical density is preferably 3.0 or less, more preferably 2.5 or less, and even more preferably 2.0 or less. Note that the optical density referred to here is preferably the optical density of a cured product obtained by heating and curing the composition.

[0289] The element of the present invention preferably comprises the cured product of the present invention. Furthermore, the article of the present invention preferably comprises the cured product of the present invention. Examples of the article include a display device, an electronic component, an electronic device, a mobile object, a building, or a window. Furthermore, the display device of the present invention preferably comprises the cured product of the present invention.

[0290] <Method for producing a cured product> The method for producing a cured product of the present invention includes the steps of (1) forming a coating film of the photosensitive composition of the present invention on a substrate, (2) irradiating the coating film of the photosensitive composition with actinic rays through a photomask to expose the coating film, (3) developing the exposed coating film using a developer to form a pattern of the photosensitive composition, and (4) heating the pattern of the photosensitive composition to obtain a cured pattern of the photosensitive composition. Note that in these steps, the methods described in paragraphs

[0453] to

[0481] of WO 2019 / 087985 may also be applied. The step of forming a coating film preferably involves applying the coating and then pre-baking to form the film. The step of obtaining a cured pattern preferably involves heating the pattern to thermally cure it.

[0291] The present invention will be described in more detail below with reference to Examples, Reference Examples, and Comparative Examples, but the present invention is not limited to these examples. For compounds used in the following explanations or tables that use abbreviations, the names corresponding to the abbreviations are listed in Table 1-2.

[0292]

[0293] <Synthesis Examples of Each Resin> The compositions of the resins obtained in Synthesis Examples 1 to 62 as the (A) binder resin are summarized in Tables 1-3 to 1-8. Each resin was synthesized by a known method based on a method described in a known literature, with the monomer compounds to be used as monomers and the copolymerization ratios appropriately changed. The copolymerization ratios of the monomers are as shown in Tables 1-3 to 1-8.

[0294] The hydroxyl group-containing diamines (HA-1) and (HA-2) having the following structures used in Synthesis Examples 9 and 23 were synthesized by a known method based on the synthesis method described in Synthesis Example 1 in paragraphs

[0374] to

[0376] of WO 2016 / 056451. The resins obtained in Synthesis Examples 9 and 23 using the hydroxyl group-containing diamines (HA-1) and (HA-2) having the following structures are polyimide precursors having an imide ring closure rate of less than 50% and are also polybenzoxazole precursors having a benzoxazole ring closure rate of less than 50%.

[0295]

[0296] The structures of the diamines (DA70), (DA71), (DA75) to (DA80), (DA82), (DA84), (DA86), (DA90), (DA92), (DA94), and (DA100) to (DA104) used in each synthesis example are shown below. These compounds were synthesized by known methods. The structures of the tetracarboxylic dianhydrides (AH1) and (AH2) used in each synthesis example are also shown below.

[0297]

[0298]

[0299] In the (XA) resin in the insulating resin layer, the amine residue derived from any of the diamines (DA70), (DA71), (DA75) to (DA80), (DA82), (DA84), (DA86), (DA90), (DA92), and (DA94) corresponds to an amine residue having a phenolic hydroxyl group and satisfies the above conditions (XS1x), (XS1y), and (XS1z). Furthermore, the amine residue derived from any of (DA70), (DA71), (DA79), (DA86), and (DA94) has an asymmetric carbon atom that is an asymmetric center. The amine residue derived from any of the diamines (DA70), (DA71), (DA86), and (DA90) also satisfies the above condition (XY1). The amine residue derived from any of the diamines (DA75) to (DA80), (DA82), (DA84), (DA92), and (DA94) also satisfies the above-mentioned condition (XY3). The resins obtained in Synthesis Examples 42 to 45 using the diamines (DA86), (DA90), (DA92), and (DA94) are polyimide precursors having an imide ring closure rate of less than 50% and are also polybenzoxazole precursors having a benzoxazole ring closure rate of less than 50%. The resin obtained in Synthesis Example 31 using the diamine (DA94) is a polyimide having an imide ring closure rate of 50% or more and is also a polybenzoxazole precursor having a benzoxazole ring closure rate of less than 50%.

[0300] In the (XA) resin in the insulating resin layer, the amine residue derived from any of the diamines (DA100) to (DA104) corresponds to an amine residue without a phenolic hydroxyl group. Furthermore, the amine residue derived from the diamine (DA100) has a spiro structure that is an asymmetric axis, and therefore satisfies the above conditions (XS2x), (XS2y), and (XS2z). The amine residue derived from the diamine (DA101) satisfies the above conditions (XS1x), (XS1y), and (XS1z). The amine residue derived from the diamine (DA101) has an asymmetric carbon atom that is an asymmetric center, and therefore also satisfies the above conditions (XS2x) and (XS2y). The amine residue derived from any of the diamines (DA102) to (DA104) satisfies the above conditions (XS1x), (XS1y), and (XS1z).

[0301] In Synthesis Examples 3 to 17, 23, and 32 to 56, the amide acid structure in the resin was reacted with DFA as an esterifying agent, and the structure was converted to an amide acid ester structure having a methyl group.

[0302] In Synthesis Example 27, GMA having an epoxy group was reacted with the carboxy group derived from MAA in the resin, and all of the epoxy groups of GMA were subjected to ring-opening addition.

[0303]

[0304]

[0305]

[0306]

[0307]

[0308]

[0309] The structural units and structures of the resins obtained in each synthesis example and the resins used in each example, reference example, and comparative example are shown in Tables 2-1 to 2-4.

[0310]

[0311]

[0312]

[0313]

[0314] <Preparation Examples of Each Pigment Dispersion> The compositions of the pigment dispersions obtained in Preparation Examples Bk-1 to Bk-5 are summarized in Table 2-5. In Preparation Examples Bk-1 to Bk-5, each pigment dispersion was prepared by the following method. Table 2-5 also lists and describes the (D) colorant and (E) dispersant used in each Example, Reference Example, and Comparative Example.

[0315] Preparation Examples Bk-1 to Bk-5 Preparation of Pigment Dispersions (Bk-1) to (Bk-5) Based on the method described in paragraphs

[0138] to

[0140] of International Publication No. 2022 / 196261 and Preparation Example 1, a colorant described in Table 2-5 and ADP, a polyalkyleneamine-based polyoxyalkylene ether-based dispersant, were used as the dispersant, and a wet media dispersion treatment was carried out using a circulation system so that the average primary particle diameter of the pigment was the value described in Table 2-5. Then, filtration was carried out using a 0.80 μmφ filter to obtain pigment dispersions (Bk-1) to (Bk-5) with a solids concentration of 15% by mass and a colorant / dispersant ratio of 100 / 35 (by mass). The average primary particle diameter of the pigment in the obtained pigment dispersion is shown in Table 2-5. Table 2-5 also shows the average primary particle size of the pigment in the cured film (hereinafter referred to as "cured film") prepared by the method described in the Examples below, the crystallite size of the pigment in the pigment dispersion, and the crystallite size of the pigment in the cured film.

[0316]

[0317] <Synthesis Examples of Silica Particle Dispersions> Synthesis Example 30 Synthesis of Silica Particle (SP-1) Dispersion Based on the method described in paragraphs

[0132] to

[0134] and Synthesis Example 3 of WO 2022 / 196261, a dispersion of silica particles (SP-1) was obtained using MEK-ST-40 as the silica particle dispersion, KBM-503 as a surface modifier, and MOP as a polymerization inhibitor. The inorganic silica particles (SP-1) have methacryloyl groups as functional groups on the particle surface, a primary particle size distribution range of 10 to 16 nm, an average primary particle size of 12 nm, an aspect ratio range of 1.0 to 1.1, an average aspect ratio of 1.1, and a sodium content of 100 ppm by mass.

[0318] <Evaluation Methods in Each Example, Reference Example, and Comparative Example> The evaluation methods in each Example, Reference Example, and Comparative Example are as follows. A glass substrate (manufactured by Geomatec Co., Ltd.; hereinafter referred to as "ITO / Ag substrate") was prepared by sputtering a 100 nm film of APC (silver / palladium / copper = 98.07 / 0.87 / 1.06 (mass ratio)) on glass, and then sputtering a 10 nm film of ITO on top of the APC layer. The glass substrate was then irradiated with UV-O for 100 seconds using a tabletop optical surface treatment device (PL16-110; manufactured by Sen Special Light Sources Co., Ltd.). ３ The substrates were washed before use. Tempax glass substrates (AGC Technoglass) were used without pretreatment. The other substrates were used after a dehydration bake treatment by heating at 130°C for 2 minutes using a hot plate (HP-1SA; AS ONE Corporation). The film thickness was measured using a surface roughness and contour shape measuring instrument (SURFCOM1400D; Tokyo Seimitsu Co., Ltd.) at a measurement magnification of 10,000x, a measurement length of 1.0 mm, and a measurement speed of 0.30 mm / s.

[0319] (1) Weight average molecular weight of resin In measuring the weight average molecular weight of the above polyimides (PI-1) to (PI-3), polyimide precursors (PIP-1) to (PIP-16), polybenzoxazole (PB-1), polybenzoxazole precursors (PBP-1) to (PBP-3), and polyamideimide (PAI-1), a 0.10 mass% N-methyl-2-pyrrolidone solution of each resin was prepared and used as a measurement sample. Using a gel permeation chromatography (hereinafter "GPC") analyzer (Waters 2690; manufactured by Waters), lithium chloride and phosphoric acid were dissolved in N-methyl-2-pyrrolidone at 0.050 mol / L as a fluidized bed. The weight average molecular weight in terms of polystyrene was measured and determined. For other resins, the weight average molecular weight in terms of polystyrene was measured at around room temperature using a GPC analyzer (HLC-8220; manufactured by Tosoh Corporation) and tetrahydrofuran or N-methyl-2-pyrrolidone as the fluidized bed in accordance with JIS K7252-3 (2008).

[0320] (2) Imide Ring Closure Rate and Benzoxazole Ring Closure Rate of Resin Regarding the imide ring closure rate, each of the above resins was dissolved in GBL to a concentration of 35% by mass to prepare a resin solution. Each of the resulting resin solutions was applied to a silicon wafer using a spin coater (1H-DX; manufactured by Mikasa Co., Ltd.) and then baked at 120 ° C for 180 seconds to produce a resin film with a thickness of 4 to 5 μm. The prepared silicon wafer with the resin film was divided into two, and one of the two was heated in a clean oven (CLH-21CD-S; manufactured by Koyo Thermo Systems Co., Ltd.) at 140 ° C for 30 minutes in a nitrogen atmosphere with an oxygen concentration of 20 ppm by mass or less, and then further heated to 320 ° C for 60 minutes to completely close the imide ring (resin film after heating). The other half was used as is without heat treatment (resin film before heating). Using an infrared spectrophotometer (FT-720; manufactured by Horiba, Ltd.), the transmission infrared absorption spectra of the resin film before and after heating were measured. The absorption peak of the imide structure due to polyimide (1,780 cm －１ Near 1,377 cm －１ After confirming the presence of 1,377 cm before heating, －１Peak intensity (X) near 1,377 cm after heating －１ The peak intensity (Y) around each of the points was determined. The imide ring closure rate in the resin film before heating was calculated using the following formula: Imide ring closure rate [%] = (X / Y) x 100.

[0321] Regarding the benzoxazole ring closure rate, a resin film with a thickness of 4 to 5 μm was prepared using the same method as above. The prepared silicon wafer with the resin film was divided into two, and one half was heated at 320°C for 30 minutes using a buzzer hot plate (HPD-3000BZN; manufactured by AS ONE Corporation) to completely close the benzoxazole ring (resin film after heating). The other half was used as is without being heated (resin film before heating). Using an infrared spectrophotometer (FT-720; manufactured by HORIBA, Ltd.), the transmission infrared absorption spectra of the resin film before and after heating were measured. The absorption peak (1,570 cm) of the benzoxazole structure due to polybenzoxazole was measured. －１ After confirming the presence of a peak due to C=C (C=N) stretching vibration near 1,570 cm before heating, －１ Peak intensity (P) near 1,570 cm after heating －１ The peak intensity (Q) around each peak was determined. The benzoxazole ring closure rate in the resin film before heating was calculated using the following formula: Benzoxazole ring closure rate [%] = (P / Q) x 100.

[0322] (3) Content of specific compound in composition or cured film The content of specific nitrogen-containing compound in the composition or cured film was measured by gas chromatography mass spectrometry and liquid chromatography mass spectrometry using a calibration curve of a standard substance. The content of specific compound in the total solid content of the composition was calculated from the obtained measured value and the following formula: (Content of specific compound in the total solid content of the composition) = (Content of specific compound in the composition) × 100 / (Solid content concentration of the composition [mass %]).

[0323] (4) Content of Specific Elements in Resins, Compositions, or Cured Films The contents of fluorine, chlorine, bromine, and sulfur in resins, compositions, or cured films were measured by combustion ion chromatography under the following measurement conditions. The resins were separated by GPC fractionation before use. Even when the resins were composed of resins with different structural units, the resins were separated by GPC fractionation before use. Regarding the resins in the compositions, whether they contained a single resin or resins with different structural units, the compositions were extracted with dichloromethane, ultracentrifuged, and then separated from the dichloromethane-insoluble matter by GPC fractionation before use. The resins, compositions, or cured films were combusted and decomposed in the combustion tube of an analyzer. The generated gas was absorbed in an absorption liquid, and a portion of the absorption liquid was analyzed by ion chromatography. The absence of an element content indicates that the element was not detected. The content of each element relative to the total solids of the composition was calculated using the measured values ​​and the following formula: (Content of total solid content of composition) = (Content in composition) × 100 / (Solid content concentration of composition [mass %]) <Combustion and absorption conditions> System: AQF-2100H, GA-210 (manufactured by Mitsubishi Chemical Corporation) Electric furnace temperature: Inlet 900°C, Outlet 1000°C Gas: Ar / O ２ 200mL / min, O ２ 400 mL / min Absorption liquid: H ２ O ２ 0.1 mass% Absorption solution volume: 5 mL <Conditions for ion chromatography and anion analysis> System: ICS1600 (manufactured by DIONEX) Mobile phase: 2.7 mmol / L Na ２ CO ３ , 0.3 mmol / L NaHCO ３ Flow rate: 1.50 mL / min Detector: electrical conductivity detector Injection volume: 100 μL.

[0324] (5) Content of specific anions in resins, compositions, or cured films The contents of fluoride ions, chloride ions, bromide ions, and sulfur-based anions in resins, compositions, or cured films were measured by ion chromatography under the following measurement conditions. The resins and resins in the compositions were separated by GPC fractionation or by dichloromethane extraction, ultracentrifugation, and GPC fractionation using the method described in (4) above. The resins, compositions, or cured films were added to ultrapure water and shaken at room temperature to extract ionic components. The extract was treated with a solid-phase extraction cartridge and then analyzed for anionic components by ion chromatography. When anionic components could not be measured using the ion chromatography analysis condition 1 described below, they were measured using the ion chromatography analysis condition 2 described below. The absence of an ion content indicates that the ion was not detected. The content of each component relative to the total solid content of the composition was calculated using the measured values ​​and the following formula: (Content of specific anion in total solid content of composition) = (Content of specific anion in composition) × 100 / (Solid content concentration [mass %] of composition) <Ion chromatography analysis condition 1 (anion component)> Apparatus: IC-2010 (manufactured by Tosoh Corporation) Separation column: 4.6 mmφ × 100 mm, TSKgel Super IC-Anion HS Eluent: sodium bicarbonate Column temperature: 40°C Detector: electrical conductivity meter Sample injection volume: 250 μL <Ion chromatography analysis condition 2 (anion component)> Apparatus: IC-2010 (manufactured by Tosoh Corporation) Separation column: 4.6 mmφ × 100 mm, TSKgel Super IC-Anion HS Eluent: sodium carbonate / sodium bicarbonate Column temperature: 40°C Detector: electrical conductivity meter Sample injection volume: 250 μL.

[0325] (6) Water Content in Composition The water content in the composition was measured by volumetric titration in accordance with JIS K0113 (2005) using a Karl Fischer moisture meter (MKS-520; manufactured by Kyoto Electronics Manufacturing Co., Ltd.) and a Karl Fischer reagent as a titration reagent.

[0326] (7) Development Residue Using an FPD / LSI inspection microscope (OPTIPHOT-300; manufactured by Nikon Corporation), the resolution pattern of the developed film prepared in each example was observed. As an index of development residue, the presence or absence of residue in a 20 μm line and space pattern was observed, and the area occupied by the residue in the opening was calculated. The evaluation was carried out as follows, and A+, A, B+, B, C+, and C, where the area of ​​residue was 20% or less, were considered to be pass. A+: No residue A: The area where residue is present is 3% or less B+: The area where residue is present is more than 3% but not more than 6% B: The area where residue is present is more than 6% but not more than 10% C+: The area where residue is present is more than 10% but not more than 15% C: The area where residue is present is more than 15% but not more than 20% D: The area where residue is present is more than 20% but not more than 50% E: The area where residue is present is more than 50% but not more than 100%.

[0327] (8) Light-Shielding Property (Optical Density Value (hereinafter, "OD Value")) A cured film of the composition was prepared on a Tempax glass substrate (manufactured by AGC Technoglass Co., Ltd.) by the method described in Example 1 below. The incident light intensity (I ) at three points on the surface of the prepared cured film was measured using a transmission densitometer (X-Rite 361T(V); manufactured by X-Rite Co., Ltd.). ０ The optical density (OD) per 1 μm of film thickness was calculated as an index of light-shielding ability using the following formula, and the average value of the OD values ​​at three points on the surface was calculated. OD value=log １０ (I ０ / I).

[0328] (9) Ion detection intensity at a depth of 5 nm from the surface of the conductive inorganic layer and the insulating resin layer Ion detection intensity was measured by time-of-flight secondary ion mass spectrometry for an organic EL display fabricated by the method described in Example 1 below. Etching ion species accelerated by applying a bias were collided with the pixel portion from the light-emitting layer side. Primary ion species accelerated by applying a bias were collided with the pixel portion from the light-emitting layer side while etching was performed in the depth direction from the light-emitting layer side toward the substrate side. The secondary ions emitted during this process were measured, and a depth profile in the depth direction from the light-emitting layer side toward the substrate side was measured. In the depth profile, the point where the detection intensity of the ion species of the elements constituting the first electrode (conductive inorganic layer) was 100 or more was defined as the surface of the first electrode. Note that when a transparent conductive oxide film layer containing indium as a main element is present on the outermost layer of the first electrode on the light-emitting layer side, indium oxide ions (InO ２ － ) was determined as the surface of the first electrode, where the detected intensity was 100 or more. The position at a depth of 5 nm from the surface of the first electrode was determined by measuring a depth profile in the depth direction from the light-emitting layer side toward the substrate side, starting from the surface of the first electrode on the side in contact with the organic layer including the light-emitting layer determined as described above, from the surface of the first electrode to the surface opposite to the substrate side, and by measuring the thickness of the first electrode, and calculating the sputtering rate of the first electrode from these values.

[0329] Similarly, etching ion species accelerated by applying a bias were collided with the pixel division layer (insulating resin layer) from the second electrode side of the pixel division layer. While etching was performed in the depth direction from the pixel division layer side toward the substrate side, primary ion species accelerated by applying a bias were collided with the pixel division layer from the second electrode side. The secondary ions emitted during this process were measured, and a depth profile in the depth direction from the pixel division layer side toward the substrate side was measured. The point in the depth profile where the detection intensity of the ion species of the elements constituting the pixel division layer was 100 or greater was defined as the surface of the pixel division layer. Furthermore, a position 5 nm deep from the surface of the pixel division layer was determined by measuring the depth profile in the depth direction from the pixel division layer side toward the substrate side, starting from the surface of the pixel division layer on the second electrode side, from the surface of the pixel division layer to the surface opposite the substrate side, and measuring the thickness of the pixel division layer. The sputtering rate of the pixel division layer was calculated from these values.

[0330] The measurement conditions for time-of-flight secondary ion mass spectrometry were as follows. The detected intensity of each ion was calculated as the average value of three measurements of time-of-flight secondary ion mass spectrometry. <Measurement conditions> Apparatus: time-of-flight secondary ion mass spectrometer (TOF.SIMS5; manufactured by ION-TOF) Etching ion species: Cs ＋ Etching ion acceleration energy: 0.25 keV Etching ion current: 7 nA Etching area: 150 μm 2 Measurement area: 30 μm 2 Number of pixels: 128 × 128 pixels Primary ion species: Bi ＋ Primary ion energy: 25 keV Primary ion current: 0.6 pA (cycle time: 50 μs) Secondary ion polarity: Negative Mass resolution: High Charge compensation: E-gun.

[0331] (10) Light-emitting characteristics of light-emitting element (low-voltage driving characteristics and light-emitting brightness) An organic EL display fabricated by the method described in Example 1 below was driven at a voltage gradually increasing from the low voltage side until the current density reached 30 mA / cm. ２ The voltage value and current density were plotted when the voltage value was changed sequentially from the low voltage side, and the value at a current density of 10 mA / cm was used as an index of low-voltage driving characteristics and luminance. ２The driving voltage at which the driving voltage was 4.5 V or less was determined. The evaluation was made as follows, and A+, A, B+, B, C+, and C, which gave driving voltages of 4.5 V or less, were rated as passing. A+: driving voltage 3.2 V or less A: driving voltage greater than 3.2 V and less than 3.5 V B+: driving voltage greater than 3.5 V and less than 3.7 V B: driving voltage greater than 3.7 V and less than 4.0 V C+: driving voltage greater than 4.0 V and less than 4.2 V C: driving voltage greater than 4.2 V and less than 4.5 V D: driving voltage greater than 4.5 V and less than 5.5 V E: driving voltage greater than 5.5 V or not measurable.

[0332] (11) Reliability of Light-Emitting Device An organic EL display prepared by the method described in Example 1 below was subjected to a current of 10 mA / cm ２ The device was driven with a direct current to emit light, and the device was observed for light emission defects such as non-emitting areas and uneven brightness. As a durability test, the device was heated to 80°C with the light extraction side facing up, and the wavelength was 365 nm and the illuminance was 0.6 mW / cm. ２ After 500 hours, the organic EL display was irradiated with light of 10 mA / cm ２ The light-emitting devices were driven by DC current and the light-emitting characteristics were observed for any changes. As an index of the reliability of the light-emitting device, the light-emitting area after the durability test was measured, with the light-emitting area before the durability test being taken as 100%. The evaluation was carried out as follows, and A+, A, B+, B, C+, and C, which indicate that the light-emitting area was 80% or more, were judged to be acceptable. A+: Light-emitting area is 100%. A: Light-emitting area is 97% or more but less than 100%. B+: Light-emitting area is 94% or more but less than 97%. B: Light-emitting area is 90% or more but less than 94%. C+: Light-emitting area is 85% or more but less than 90%. C: Light-emitting area is 80% or more but less than 85%. D: Light-emitting area is 60% or more but less than 80%. E: Light-emitting area is less than 60%.

[0333] (12) Migration Resistance (Insulation Reliability) A cured film of the composition was prepared to a thickness of approximately 1.5 μm on a migration evaluation substrate (WALTS-TEG ME0102JY; manufactured by Waltz Corporation) using the same method as the cured film preparation method described in Example 1 below. Next, an evaluation element was prepared by soldering a lead wire to the measurement terminals with 15 μm lines and 10 μm spaces in a line-and-space pattern of comb-shaped copper wiring. The insulation reliability of the prepared evaluation element under high temperature and high humidity conditions was evaluated using an insulation degradation characteristic evaluation system (ETAC SIR13; manufactured by Kusumoto Chemicals Co., Ltd.). The evaluation element was placed in a high-temperature, high-humidity chamber set at a temperature of 85°C and a humidity of 85% RH, and a voltage of 5.0 V was applied. The change in resistance over time was measured at 5-minute intervals. When the resistance value was 1.0 × 10 ６ When the resistance reached Ω or less, it was judged to be insulation failure, and the test time at that point was measured as an index of migration resistance. The evaluation was made as follows, and A+, A, B+, B, C+, and C, which were test times of 200 hours or more, were judged to be pass. A+: Test time was 1,000 hours or more A: Test time was 800 hours or more but less than 1,000 hours B+: Test time was 600 hours or more but less than 800 hours B: Test time was 400 hours or more but less than 600 hours C+: Test time was 300 hours or more but less than 400 hours C: Test time was 200 hours or more but less than 300 hours D: Test time was 50 hours or more but less than 200 hours E: Test time was less than 50 hours or measurement was impossible.

[0334] <Compounds used in each Example, Reference Example, and Comparative Example> The structures of the compounds used in each Example, Reference Example, and Comparative Example are shown below. These compounds were synthesized by known methods. (p-1) is a dissolution promoter.

[0335]

[0336]

[0337]

[0338] Furthermore, compounds containing fluorine, chlorine, bromine, or sulfur (hereinafter referred to as "compounds containing specific elements"); specific nitrogen-containing compounds; and corresponding compounds used in each of the Examples, Reference Examples, and Comparative Examples are collectively shown in Tables 2-6.

[0339]

[0340] <Preparation of Photosensitive Compositions> Compositions 1 to 103 were prepared according to the formulations listed in Tables 3-1 to 3-10. In Tables 3-1 to 3-10, the values ​​in parentheses indicate the parts by mass of the solid content of each component. When a composition contained a pigment, a preparation not containing a pigment dispersion was first prepared, and then the pigment dispersion was mixed with the preparation to prepare the composition. A PGMEA / EL / GBL solvent (50 / 40 / 10 by mass ratio) was used to prepare the composition so that the solid content concentration of the composition was 20% by mass. The resulting composition solution was filtered through a 0.45 μm diameter filter before use. Compositions 45 to 56 were prepared in a similar manner, using a PGMEA / EDM / MBA solvent (70 / 20 / 10 by mass ratio).

[0341] Example 1 First, a method for preparing a cured film of the composition will be described. Composition 1 prepared on an ITO / Ag substrate was applied using a spin coater (MS-A100; manufactured by Mikasa Corporation), and then prebaked at 120°C for 120 seconds using a buzzer hotplate (HPD-3000BZN; manufactured by AS ONE Corporation) to prepare a prebaked film with a film thickness of approximately 1.8 μm. The prepared prebaked film was subjected to patterning exposure using a double-sided alignment single-sided exposure device (Mask Aligner PEM-6M; manufactured by Union Optical Co., Ltd.) with the i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) of an ultra-high pressure mercury lamp through a grayscale mask for sensitivity measurement (MDRM MODEL 4000-5-FS; manufactured by Opto-Line International). After exposure, the film was developed using a compact photolithography developing device (AD-1200; manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38 wt% TMAH aqueous solution and rinsed with water for 30 seconds to produce a developed film. The development time was 60, 90, or 120 seconds. If a pattern could not be formed after development with the 2.38 wt% TMAH aqueous solution, an exposed film was prepared in the same manner as above, and after exposure, the film was developed with cyclopentanone and rinsed with water for 30 seconds to produce a developed film. The development time was also 60, 90, or 120 seconds. The developed patterns for all films were observed, and the optimal exposure dose (value measured with an i-line illuminometer) capable of forming a space pattern with a 20 μm dimensional width corresponding to the openings in a 20 μm line-and-space pattern was determined from these results. The optimal development time and the optimal exposure dose for that development time were determined. After exposure at the optimum exposure dose and development for the optimum development time, the pattern was thermally cured at 200°C for 60 minutes using a high-temperature inert gas oven (INH-9CD-S; manufactured by Koyo Thermo Systems Co., Ltd.) to produce a cured film with a film thickness of approximately 1.2 μm. The thermal curing conditions were as follows: in a nitrogen atmosphere with an oxygen concentration of 20 ppm by mass or less, the temperature was raised to 200°C at a heating rate of 3.5°C / min, heat treatment was carried out at 200°C for 60 minutes, and then cooling to 50°C.

[0342] The cured film was analyzed by methods such as proton nuclear magnetic resonance spectroscopy, infrared spectroscopy, pyrolysis-gas chromatography-mass spectrometry, reactive pyrolysis-gas chromatography-mass spectrometry, liquid chromatography-mass spectrometry, and time-of-flight secondary ion mass spectrometry to analyze the structural units of the resins and the structures of the compounds contained in the cured film. It was confirmed that the cured film of Composition 1 contained the resins and compounds in Composition 1 and resins and compounds having structures derived from them, as follows: (XA1x) resin: polyimide; polyimide precursor; polybenzoxazole; polybenzoxazole precursor (XA1y) resin: phenolic resin (XC1x) compound: carboxylic acid containing an indene structure; carboxylic acid ester containing an indene structure; sulfonic acid containing an indene structure; sulfonic acid aryl ester containing an indene structure.

[0343] Fabrication of an Organic EL Display (Having a Pixel Dividing Layer with Thick and Thin Film Portions) Next, the fabrication method of the organic EL display will be described. Figure 4 shows a schematic diagram of the substrate used. First, a 100-nm-thick non-transparent conductive metal layer of APC (silver / palladium / copper = 98.07 / 0.87 / 1.06 (mass ratio)) was sputtered onto a 38 x 46 mm alkali-free glass substrate 47, and then patterned by etching to form an APC layer. A 10-nm-thick amorphous ITO film was then sputtered onto the APC layer as a transparent conductive oxide layer, and then patterned by etching to form a first electrode portion 48, which serves as a reflective electrode. At this time, an auxiliary electrode portion 49 for connecting the second electrode was also simultaneously formed (Figure 4 (1)). The resulting electrode-attached substrate was ultrasonically cleaned for 10 minutes using "Semicoclean" (registered trademark) 56 (manufactured by Furuuchi Chemical Co., Ltd.) and then washed with ultrapure water. Next, Composition 1 was applied to this substrate and prebaked in the same manner as described above. It was then exposed to patterning through a photomask with a predetermined pattern, developed, rinsed, and then heated to thermally cure. The processing conditions were the optimal exposure dose and optimal development time measured in advance. The thermal curing conditions were also the same as described above. Using the above method, a pixel division layer 50 was formed in the effective area of ​​the substrate. The pixel division layer 50 had rectangular openings, each 70 μm wide and 70 μm long, arranged at a widthwise pitch of 175 μm and a lengthwise pitch of 175 μm, each exposing a first electrode (see (2) in Figure 4). The openings in this pixel division layer 50 ultimately become the light-emitting pixels of the organic EL display. The effective area of ​​the substrate was 16 mm square, and the pixel division layer 50 was formed to a thickness of approximately 1.5 μm. Composition 1 was then applied to the substrate on which the pixel division layer 50 had been formed and prebaked in the same manner as described above. It was then exposed to patterning through a photomask with a predetermined pattern, developed, rinsed, and then heated to thermally cure. The processing conditions were the optimal exposure dose and optimal development time measured in advance. The thermal curing conditions were also the same as those described above. Using this method, rectangular thick film portions with a width of 35 μm and a length of 35 μm were formed at multiple locations on the pixel dividing layer portion 50 that were not adjacent to the openings. The thick film portions were formed to a thickness of approximately 1.5 μm.

[0344] Next, an organic EL display was fabricated using the substrate on which the first electrode portion 48, the auxiliary electrode portion 49, and the pixel dividing layer portion 50 were formed. After nitrogen plasma treatment as a pretreatment, an organic EL layer portion 51 including a light-emitting layer was formed by vacuum deposition ((3) in FIG. 4). The degree of vacuum during deposition was 1×10 －３ The pressure was below 1 Pa, and the substrate was rotated relative to the evaporation source during evaporation. First, compound (HT-1) was evaporated to a thickness of 10 nm as a hole injection layer, and compound (HT-2) was evaporated to a thickness of 50 nm as a hole transport layer. Next, compound (GH-1) was evaporated as a host material to a thickness of 40 nm in the emitting layer, and compound (GD-1) was evaporated as a dopant material to a thickness of 40 nm so that the doping concentration was 10% by volume. Thereafter, compound (ET-1) and compound (LiQ) were laminated to a thickness of 40 nm at a volume ratio of 1:1 as electron transport materials. The compounds used in the organic EL layer (compounds (HT-1), (HT-2), (GH-1), (GD-1), (ET-1), and (LiQ)) were the same compounds as those described in paragraphs

[0599] to

[0600] of WO 2017 / 057281. Next, a compound (LiQ) was vapor-deposited to a thickness of 2 nm, followed by vapor-depositing MgAg (magnesium / silver = 10 / 1 (volume ratio)) to a thickness of 10 nm to form the second electrode portion 52, which is a transparent electrode ((4) in Figure 4). Thereafter, in a low-humidity nitrogen atmosphere, a cap-shaped glass plate was adhered using an epoxy resin adhesive to seal the substrate, and four 5 mm square top-emission organic EL displays were fabricated on one substrate. The film thickness referred to here is the value displayed on a quartz crystal oscillator film thickness monitor.

[0345] Examples 2 to 64 and Comparative Examples 1 to 6 Using the compositions shown in Tables 3-1 to 3-10, the same operations and evaluations as in Example 1 were carried out. The evaluation results are summarized in Tables 3-1 to 3-10. When a negative-tone photosensitive composition was used in each example, a prebaked film was prepared in the same manner as in Example 1, and spray-developed with a 2.38% by mass aqueous solution of TMAH or cyclopentanone. The time required for the prebaked film (unexposed area) to completely dissolve (Breaking Point; hereinafter, "BP") was measured, and the development time was set to 1.3 times the measured BP. A photomask with reversed light-transmitting and light-shielding areas was used, and after exposure at an optimal exposure dose, the developed pattern was thermally cured at 200°C for 60 minutes. The sulfur element content and sulfur-based anion content were measured only in Examples 45 to 56.

[0346]

[0347]

[0348]

[0349]

[0350]

[0351]

[0352]

[0353]

[0354]

[0355]

[0356] In Comparative Examples 1 to 4, the content of elemental fluorine in the total solid content of the composition does not satisfy the requirements for the composition of the present invention. In Comparative Examples 5 and 6, the content of elemental fluorine in the structure of the (A1x) resin is high, and the content of elemental fluorine in the total solid content of the composition exceeds the preferred range. Therefore, Comparative Examples 1 to 6 are inferior in various properties.

[0357] Example 98: Fabrication of an organic EL display An organic EL display was fabricated by the method described in Example 1, except that the thin film portion of the pixel dividing layer was fabricated using composition 47 instead of composition 1, and the thick film portion of the pixel dividing layer was formed using composition 51. The results of evaluating various properties in the same manner as in Example 1 are summarized in Table 3-11. The structural units of the resins and the structures of the compounds contained in the thin film portion and the thick film portion were analyzed using the same method. The thin film portion and the thick film portion each contained the resin and compound in composition 47 or composition 51, as well as resins and compounds having structures derived from them, as shown below. The OD value per μm of film thickness, which is an index of the light-blocking ability of the thin film portion, was 0.9. Thin film portion: (XA1x) Resin: Polyimide; Polybenzoxazole; Polybenzoxazole precursor (XA1y) Resin: Phenol resin (XC2x) Compound: Compound having a fluorene structure in which an imino group is bonded to the fluorene structure (XD) Colorant: Benzofuranone-based black pigment Thick film portion: (XA1x) Resin: Polyimide; Polybenzoxazole; Polybenzoxazole precursor (XA1y) Resin: Phenol resin (XC2x) Compound: Compound having a fluorene structure in which an imino group is bonded to the fluorene structure.

[0358] Example 99: Fabrication of Organic EL Display (Processing Thick and Thin Film Portions Simultaneously) An organic EL display was fabricated using the same method as in Example 1, except that a cured film of Composition 43 was formed as the pixel dividing layer 50 using a method for processing a stepped shape simultaneously using a halftone photomask having a predetermined pattern. The pixel dividing layer 50 was formed to have a thick film portion with a thickness of approximately 3.0 μm and a thin film portion with a thickness of approximately 1.5 μm. The results of evaluating various properties in the same manner as in Example 1 are summarized in Table 3-11. Using the same method, the structural units of the resins and the structures of the compounds contained in the thin film portion and the thick film portion were analyzed. The thin film portion and the thick film portion each contained the resin and compound in Composition 43, as well as resins and compounds having structures derived from them, as shown below. In other words, the thin film portion and the thick film portion obtained by curing Composition 43 contained the same compounds. Furthermore, the OD value per μm of film thickness, which is an index of the light-blocking ability of the thin film portion and the thick film portion, was both 0.9. (XA1x) resin: polyimide; polyimide precursor; polybenzoxazole; polybenzoxazole precursor (XA1y) resin: phenolic resin (XC1x) compound: carboxylic acid having an indene structure; carboxylic acid ester having an indene structure; sulfonic acid having an indene structure; sulfonic acid aryl ester having an indene structure (XD) colorant: C.I. Acid Red 52; C.I. Basic Blue 7; C.I. Solvent Red 18 Other compounds: 1,2,4-trihydroxybenzene; structure represented by formula (12) Compounds having a specific crosslinked structure (structure represented by formula (12) and quinone structure represented by formula (12)).

[0359] In addition, for Examples 1, 6, 10 to 12, 65, and 66, the results of measuring the ion detection intensity on the surface of the pixel dividing layer portion and the ion detection intensity on the surface of the first electrode are also summarized in Table 3-9.

[0360]

[0361] <Storage Stability of Photosensitive Composition> Each of the compositions prepared in Examples 1 to 97 was stored at 25°C for one week. After storage, the composition was formed into a film on a substrate in the same manner as in Example 1. As a result, no foreign matter was generated, and the storage stability was good. Meanwhile, Compositions 98 to 103 prepared in Comparative Examples 1 to 6, in which the fluorine content relative to the total solid content of the photosensitive composition exceeded 1,000 ppm by mass, were similarly stored at 25°C for one week. After storage, the composition was similarly formed into a film on a substrate. As a result, a large amount of foreign matter was generated, and the storage stability was poor.

[0362] REFERENCE SIGNS LIST 10A Semiconductor device having bumps 11 Silicon substrate 12 Al pad 13 Passivation layer 14 Insulating layer 15 Metal layer 16 Metal wiring 17 Insulating layer 18 Barrier metal layer 19 Scribe line 20 Solder bump 30A Display device having interlayer insulating layer, partition layer, and planarizing layer 31 Light-emitting element 32 Interlayer insulating layer 33, 33c Metal wiring 34 Counter substrate 35 Electrode terminal 36 Light-emitting element drive substrate 37 Drive element 38 Barrier metal 39 Solder bump 40 Partition layer 41 Planarizing layer 47 Alkali-free glass substrate 48 First electrode portion 49 Auxiliary electrode portion 50 Pixel division layer portion 51 Organic EL layer portion including light-emitting layer 52 Second electrode portion 100A Display device in which pixel division layer has a stepped shape having a thick film portion and a thin film portion REFERENCE SIGNS LIST 101 Substrate 102 Metal wiring 103 TFT element layer 104 Interlayer insulating layer 105 TFT planarizing layer / TFT protective layer 106 Pixel division layer having a stepped shape 106a Thin film portion in pixel division layer portion 107 First electrode 108 Light-emitting layer 109 Second electrode 110 Sealing layer 111 Touch panel wiring / touch panel electrode 112 Color filter layer 113 Black matrix layer 114 Overcoat layer 115 Substrate 116 Thick film portion in pixel division layer 100x Cross-sectional axis in plan view 112a Color filter layer portion 116a Thick film portion in pixel division layer portion 117a Opening in pixel division layer portion having a stepped shape 118a Opening in black matrix layer portion

Claims

1. A device having a substrate, a conductive inorganic layer, and an insulating resin layer in this order, the insulating resin layer having a plurality of openings, the insulating resin layer having a fluorine ion (F) concentration measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the conductive inorganic layer on the insulating resin layer side in the openings. － ) detection strength (F ＭＬ ) counts, an element that satisfies formula (FA-1): ＭＬ )≦500 (FA-1).

2. A display device comprising the element according to claim 1, further comprising a second electrode and a light-emitting layer, the conductive inorganic layer being a first electrode, and the insulating resin layer being a pixel dividing layer, or further comprising a first electrode, a second electrode, a pixel dividing layer, and a light-emitting layer, the insulating resin layer being a TFT planarizing layer, and the conductive inorganic layer being a metal wiring layer.

3. The display device according to claim 2, wherein the first electrode is a non-transparent electrode having a multi-layer structure, and at least one of the layers other than the outermost layer on the light-emitting layer side of the first electrode has a non-transparent conductive metal layer containing silver or copper as a main element.

4. The display device according to claim 3, wherein the first electrode has a transparent conductive oxide film layer and a non-transparent conductive metal layer, and the outermost layer of the first electrode on the light-emitting layer side has a transparent conductive oxide film layer containing indium as a main element.

5. A semiconductor device having a second electrode and a light-emitting layer, the conductive inorganic layer being a first electrode, and the insulating resin layer being a pixel dividing layer, wherein the number of indium oxide ions (InO ) measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the transparent conductive oxide film layer on the side in contact with the light-emitting layer in the opening is 100 μm. ２ － ) is the detection intensity (InO ＭＬ 5. The display device according to claim 4, which satisfies formula (FA-2) and formula (InA-1), ＭＬ ) / (InO ＭＬ )≦0.5000 (FA-2) 1,000≦(InO ＭＬ )≦40,000 (InA-1).

6. A display device according to any one of claims 2 to 5, wherein the pixel dividing layer has a stepped shape having a thick portion and a thin portion, the thick portion and the thin portion contain the same (XA) resin, or the thick portion and the thin portion contain the same (XD) colorant, and the optical density at the wavelength of visible light per 1 μm of film thickness of the thick portion and the thin portion is both 0.5 or more and 3.0 or less.

7. A display device according to any one of claims 2 to 5, wherein the pixel dividing layer has a stepped shape having a thick portion and a thin portion, the thin portion contains an (XD) colorant, and the optical density of the thin portion at a wavelength of visible light per 1 μm of film thickness is 0.5 or more and 3.0 or less, and the thick portion satisfies at least one of the following conditions (SP1) to (SP3): (SP1) the thick portion does not contain an (XD) colorant; (SP2) the thick portion contains an (XD) colorant, and the optical density of the thick portion at a wavelength of visible light per 1 μm of film thickness is 0.0 or more and 0.3 or less; (SP3) the thick portion contains an (XC1x) compound: one or more compounds selected from the group consisting of a carboxylic acid having an indene structure, a carboxylic acid ester having an indene structure, a sulfonic acid having an indene structure, and a sulfonic acid aryl ester having an indene structure.

8. The amount of chloride ions (Cl) measured by time-of-flight secondary ion mass spectrometry at a position at a depth of 5 nm from the surface of the conductive inorganic layer on the insulating resin layer side in the opening is － ) is the detection intensity (Cl ＭＬ ) counts, and bromine ion (Br － ) detection intensity (Br ＭＬ ) counts, and sulfur ions (S － ) detection strength (S ＭＬ ) counts, the element according to claim 1, which satisfies at least one of formula (ClA-1), formula (BrA-1), and formula (SA-1): ＭＬ )≦200 (ClA-1) (Br ＭＬ )≦200 (BrA-1) (S ＭＬ )≦200 (SA-1).

9. The element according to claim 8, which satisfies at least one of formula (ClA-1a), formula (BrA-1a), and formula (SA-1a): ＭＬ )≦200 (ClA-1a) 2≦(Br ＭＬ )≦200 (BrA-1a) 2≦(S ＭＬ )≦200 (SA-1a).

10. The element described in claim 1, wherein the insulating resin layer contains (XA1x) resin: a resin having one or more structures selected from the group consisting of imide structures, amide structures, oxazole structures, and siloxane structures in the structural unit of the resin, and / or (XA1y) resin: a resin having a phenolic hydroxyl group in the structural unit of the resin.

11. The element according to claim 10, wherein the insulating resin layer contains the (XA1x) resin, and the (XA1x) resin comprises one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, and copolymers thereof.

12. The element according to claim 11, wherein the (XA1x) resin has an amine residue having a phenolic hydroxyl group, and the amine residue having a phenolic hydroxyl group has an amine residue that satisfies the following condition (XS1x): (XS1x) is C as the molecular symmetry of the amine residue. １ Having an axis of symmetry and C ２ It has no axis of symmetry.

13. The element according to claim 11, wherein the (XA1x) resin has an amine residue having a phenolic hydroxyl group and an amine residue not having a phenolic hydroxyl group, the amine residue having a phenolic hydroxyl group has an amine residue satisfying the following condition (XS1x), and / or the amine residue not having a phenolic hydroxyl group has an amine residue satisfying at least one of the following conditions (XS1x) and (XS2x): １ Having an axis of symmetry and C ２ The amine moiety, which does not have an axis of symmetry (XS2x), has at least one of an asymmetric center, an asymmetric axis, an asymmetric plane, and a helical axis.

14. The element according to claim 11, wherein the insulating resin layer contains a nitrogen-containing compound (XH), the nitrogen-containing compound (XH) contains one or more compounds selected from the group consisting of cyclic amide compounds, amide compounds, cyclic urea compounds, urea compounds, oxazolidone compounds, and isoxazolidone compounds, and the following condition (X4) is satisfied: (X4) the total content of cyclic amide compounds, amide compounds, cyclic urea compounds, urea compounds, oxazolidone compounds, and isoxazolidone compounds in the resin layer is 0.010 mass% or more and 5.0 mass% or less.

15. The element according to any one of claims 1 and 8 to 14, wherein the insulating resin layer comprises: (XC1x) compounds: one or more compounds selected from the group consisting of carboxylic acids having an indene structure, carboxylic acid esters having an indene structure, sulfonic acids having an indene structure, and sulfonic acid aryl esters having an indene structure; and / or (XC2x) compounds: compounds having a fluorene structure, a carbazole structure, an indole structure, or a diphenyl sulfide structure, and an imino group bonded to these structures and / or a carbonyl group bonded to these structures.

16. The element according to any one of claims 1 and 8 to 14, wherein the insulating resin layer contains an organic black pigment and / or an inorganic black pigment, the organic black pigment comprising one or more types selected from the group consisting of a benzofuranone-based black pigment, a perylene-based black pigment, and an azo-based black pigment, the inorganic black pigment comprising one or more types selected from the group consisting of a nitride containing a metal element, a carbide containing a metal element, and an oxynitride containing a metal element, and the metal element is one or more types selected from the group consisting of zirconium, vanadium, niobium, hafnium, and tantalum.

17. The element according to any one of claims 1 and 8 to 14, wherein the insulating resin layer contains a compound having a quinone structure and / or a quinoid structure, which is a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded, or a compound having a crosslinked structure between a compound having an aromatic structure to which at least three phenolic hydroxyl groups are bonded and a compound having a structure represented by formula (11): In formula (11), R １１ represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms; * １ and * ２ each independently represents a bonding point, but there is no carbonyl group adjacent to the nitrogen atom; a represents 1 or 2; b represents 0 or 1; and a+b=2.

18. An electronic component comprising an element according to any one of claims 1 and 8 to 14.

19. A semiconductor device comprising an element according to any one of claims 1 and 8 to 14, further comprising a semiconductor chip and a sealing material covering the semiconductor chip, the conductive inorganic layer being a redistribution layer, and the insulating resin layer being an interlayer insulating layer for the redistribution layer, and the area of ​​the redistribution layer being larger than the area of ​​the semiconductor chip in a plan view.

20. A display device comprising an element according to any one of claims 1 and 8 to 14, further comprising a light-emitting element, the conductive inorganic layer being a metal wiring layer and the insulating resin layer being a partition layer and / or a planarization layer, the light-emitting element and the metal wiring being electrically connected, the light-emitting element being a semiconductor chip, the partition layer being formed between adjacent light-emitting elements, and the planarization layer being formed so as to cover at least a portion of the light-emitting element, or further comprising a light-emitting element and a metal wiring layer, the conductive inorganic layer being a rewiring layer and the insulating resin layer being an interlayer insulating layer of the rewiring layer, the light-emitting element and the metal wiring being electrically connected, the light-emitting element being a semiconductor chip, and the area of ​​the rewiring layer being larger than the area of ​​the light-emitting element in a planar view.

21. A device having a substrate, a conductive inorganic layer, and an insulating resin layer in this order, wherein the insulating resin layer has a plurality of openings, and the number of fluorine ions (F) measured by time-of-flight secondary ion mass spectrometry at a position at a depth of 5 nm from the surface of the conductive inorganic layer on the insulating resin layer side in the openings is 1.0 μm or more. － ) detection strength (F ＭＬ ) counts, and chloride ions (Cl － ) is the detection intensity (Cl ＭＬ ) counts, and bromine ion (Br － ) detection intensity (Br ＭＬ ) counts, and (F ＭＬ ), (Cl ＭＬ ), and (Br ＭＬ ) is the sum of (X ＭＬ ) counts, formula (XA-1) is satisfied, and further, the fluorine ion (F) counts in the insulating resin layer portion are measured by time-of-flight secondary ion mass spectrometry at a position 5 nm deep from the surface of the insulating resin layer. － ) detection strength (F ＲＮ ) counts, and chloride ions (Cl － ) is the detection intensity (Cl ＲＮ ) counts, and bromine ion (Br － ) detection intensity (Br ＲＮ ) counts, and (F ＲＮ ), (Cl ＲＮ ), and (Br ＲＮ ) is the sum of (X ＲＮ ) counts, an element that satisfies formula (XB-1): (X ＭＬ )≦500 (XA-1) (X ＲＮ )≦500 (XB-1).

22. A photosensitive composition comprising (A) a binder resin and (C) a photosensitizer, and further comprising (B) a radical polymerizable compound and / or (F) a crosslinking agent, wherein the (A) binder resin comprises (A1) a weakly acidic group-containing resin, the (A1) weakly acidic group-containing resin having (WA) a weakly acidic group: one or more groups selected from the group consisting of a phenolic hydroxyl group, a hydroxyimide group, a hydroxyamide group, a silanol group, and a mercapto group, and satisfying the following condition (1a), and further comprising water and satisfying the following condition (3): (1a) the content of fluorine element in the total solid content of the photosensitive composition is 1,000 ppm by mass or less, and (3) the content of water in the photosensitive composition is 0.010% by mass or more and 3.0% by mass or less.

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