Light element analysis device and method

Abstract

An analysis device is provided. The analysis device comprises: a measurement unit for measuring a time of flight (TOF) of ions scattered or recoiled from a sample, and locations on a plate to which the ions are irradiated; and an analysis unit for analyzing a component element of the ions by using the TOF and locations. The analysis device may be provided with a first electrode and a second electrode spaced apart from each other. When the ions proceed along a second path, the first electrode and the second electrode are arranged to face each other with the second path therebetween, and voltages having different values may be applied to the first electrode and the second electrode.

Description

Light element analysis device and method

[0001] The present invention relates to a device and method for analyzing light elements.

[0002] Traditional Rutherford Backscattering Spectrometry (RBS) uses the Elastic Recoil Detection Analysis (ERDA) technique to detect hydrogen, using a mylar film to allow only hydrogen to pass through.

[0003] There are cases where TOF is used as a method for analyzing light elements other than hydrogen with RBS, and an additional system for TOF detection is required, which usually includes a device that measures the time by detecting electrons generated by particles passing through a carbon film. That is, TOF start is triggered by detecting electrons generated when passing through the front carbon film, and TOF stop is triggered by detecting electrons generated when passing through the back carbon film. In the process of passing through two carbon films and measuring the time, the energy uncertainty of the particles increases, resulting in a decrease in measurement resolution. In addition, there is a problem that can only be realized with RBS using MeV to handle the energy decrease and energy spread that occurs when passing through the carbon film twice.

[0004] Additionally, producing MeV ions requires large facilities, is expensive, and requires a large installation space.

[0005] Additionally, this technology is only available on equipment that uses an energy detector as the main detector.

[0006] The present invention provides an analysis device and method capable of analyzing not only hydrogen but also various types of light elements.

[0007] The analysis device of the present invention may include a measurement unit that measures the time of flight (TOF) of ions scattered or recoil from a sample and the position of the ions on a plate irradiated with the ions; and an analysis unit that analyzes the component elements of the ions using the TOF and the position.

[0008] The analysis device may be provided with a manipulation unit that manipulates the ions so that the location irradiated on the plate changes depending on the type or energy of the element.

[0009] The analysis method of the present invention is such that ions scattered from a sample and incident on a plate are divided according to the type or energy of the element, and the divided ions are divided in terms of the time they are projected onto the plate and in terms of the position at which they are projected onto the plate.

[0010] It may include a detection step for detecting the arrival position and arrival time of a specific ion having a set line width on the plate.

[0011] The analysis method may further include an analysis step of analyzing the characteristics of the element using at least one of the arrival location and the arrival time.

[0012] According to the present invention, when ions scattered from a sample are irradiated onto a plate that detects particles having energy, a manipulation unit can be provided that manipulates the ions so that the position at which they are irradiated on the plate changes depending on the type or energy of the light element.

[0013] In addition to the TOF (Time Of Flight) of the light element scattered from the sample and passing through the operating section and incident on the detection plate, additional location information of the light element can be obtained.

[0014] For example, the operating unit of the present invention can positionally divide or separate each element (ion state) whose positions overlap by using a simple electrostatic deflector that deflects scattered ions. In this case, the electrostatic deflector may correspond to the operating unit.

[0015] According to the present invention, quantitative analysis that was impossible to analyze using existing methods becomes possible, which can contribute to the development of the field of surface analysis.

[0016] Recently, the structure and thickness of devices are competing in the nanoscale region. At this time, light elements such as H, Li, B, C, N, O, and F, which are considered difficult to analyze on the surface due to their influence on device characteristics, are very important and require accurate analysis. According to the present invention, light elements such as H, Li, B, C, N, O, and F can be quantitatively analyzed with high resolution, and this is expected to contribute significantly to the development of batteries, semiconductors, and displays, which are currently in the spotlight.

[0017] Figure 1 is a block diagram showing an analysis device of the present invention.

[0018] Figure 2 is a schematic diagram showing a conventional TOF-ERD analyzer.

[0019] Figure 3 is a graph showing TOF-ERD data.

[0020] Figure 4 is a schematic diagram showing ERD (Elastic Recoil Detection).

[0021] Figure 5 is a graph showing the ERDA results of TOF-MEIS.

[0022] Figure 6 is a schematic diagram showing the measurement unit of the present invention.

[0023] Figure 7 is a schematic diagram showing the measurement unit of the present invention viewed from the side.

[0024] Figure 8 is a schematic diagram showing the operating unit of the present invention.

[0025] Figure 9 is a graph of the time of flight (TOF) versus refraction distance for each element on the TOF plate.

[0026] Figure 10 is a flowchart showing the analysis method of the present invention.

[0027] FIG. 11 is a drawing showing a computing device according to an embodiment of the present invention.

[0028] Below, with reference to the attached drawings, embodiments of the present invention are described in detail so that those skilled in the art can easily implement the invention. However, the present invention can be implemented in various different forms and is not limited to the embodiments described herein. In addition, in the drawings, parts irrelevant to the description are omitted for clarity of description, and similar parts are designated with similar reference numerals throughout the specification.

[0029] In this specification, duplicate descriptions of identical components are omitted.

[0030] Additionally, when a component is referred to herein as being "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may be other components present in between. Conversely, when a component is referred to herein as being "directly connected" or "directly connected" to another component, it should be understood that there are no other components present in between.

[0031] Additionally, the terms used herein are only used to describe specific embodiments and are not intended to limit the present invention.

[0032] Also, in this specification, singular expressions may include plural expressions unless the context clearly indicates otherwise.

[0033] In addition, in this specification, it should be understood that terms such as “include” or “have” are intended to specify only the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, and do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0034] Also, in this specification, the term 'and / or' includes a combination of multiple listed items or any item among multiple listed items. In this specification, 'A or B' can include 'A', 'B', or 'both A and B'.

[0035] Additionally, in this specification, detailed descriptions of known functions and configurations that may obscure the gist of the present invention will be omitted.

[0036] Figure 1 is a block diagram showing an analysis device (1000) of the present invention.

[0037] The analysis device (1000) illustrated in FIG. 1 may include a measurement unit (100) and an analysis unit (200).

[0038] The measuring unit (100) can measure the TOF (Time Of Flight) of ions (including scattered ions) incident on the sample (10) or scattered from the sample and the position (irradiation position or arrival position) on the plate (190) where the ions are irradiated.

[0039] The measuring unit (100) may be provided with an operating unit (110) that manipulates ions so that the position (irradiation position or arrival position) at which they are irradiated on the plate (190) varies depending on the type or energy of the element. The operating unit (110) can substantially use the energy of the ions of each element to change the position at which the ions of each element arrive on the plate (190) differently. At this time, the energy of the ions of each element can be generally determined depending on the type of element. Consequently, the operating unit (110) can be viewed as manipulating the arrival position depending on the type of element. If this point is utilized conversely, the type of element can be naturally identified through the arrival position of the ions.

[0040] The analysis unit (200) can analyze the component elements (type, characteristics, etc.) of ions using the TOF and the investigation location (arrival location). Alternatively, the analysis unit (200) can analyze the composition depth distribution of ions.

[0041] Figure 2 is a schematic diagram showing a TOF-ERD analyzer. Figure 3 is a graph showing TOF-ERD data.

[0042] As shown in Fig. 2, a method of measuring the time of flight by installing carbon foil in the scattering path and a method of identifying the type of element by using an energy detector (90) in parallel have been announced. This technology can only be used in devices that use a direct energy detector (90), such as a solid state energy detector (SSD). If the energy is known and the time it takes to pass a distance of a set interval l is known, the identity of the passing particle can be known, and only the spectrum of the same particle can be separated. In Fig. 3, the ERDA (Elastic Recoil Detection Analysis) spectrum of RBS (Rutherford Backscattering Spectrometry), the Energy-TOF relationship graph, and the separation spectrum using it can be confirmed.

[0043] MEIS (medium energy ion scattering), a low-energy, high-resolution version of RBS, uses 50-500 keV, making it too low an energy for the existing SSD-TOF-ERD technology. This is due to various effects occurring when passing through the carbon film and the resolution of the SSD semiconductor detector.

[0044] In the case of TOF-MEIS, a DLD (detector that measures position and time) is used, and so far, only hydrogen atoms have been detected to a limited extent in the region that can be separated by TOF. At this time, if the ions scattered by bouncing back from the sample (10) can be spatially separated, all of the scattered ions can be measured. According to the present invention, an operation unit (110) is provided, and the operation unit (110) can separate each element whose position overlaps by using an electrostatic deflector that deflects the scattered ions. According to the operation unit (110), an environment can be provided in which only the spectrum of a desired element can be simply separated and analyzed.

[0045] Figure 4 is a schematic diagram showing ERD (Elastic Recoil Detection).

[0046] MEIS (medium energy ion scattering) creates He+ (C+, Ne+, N+, and other multivalent ions) and accelerates the He+ to 50 keV to 500 keV using an accelerator. When the accelerated He+ ions collide with the specimen, only the He+ ions are scattered and fly toward the detector at scattering angles greater than 90 degrees. However, unlike the photo above, when the detector is installed below 90 degrees, not only the He+ but also the atoms inside the specimen are bounced off when hit by the incident He+ ions. This is called ERD (Elastic Recoil Detection).

[0047] Figure 5 is a graph showing the ERDA results of TOF-MEIS.

[0048] In the case of TOF-MEIS, ERDA (Elastic Recoil Detection Analysis) measurements yield a spectrum where hydrogen appears first, followed by a spectrum overlapping various atoms. Consequently, meaningful analysis of ERDA spectra other than hydrogen has been difficult. For example, referring to Figure 5, the surface hydrogen spectrum overlaps with the Si (silicon) spectrum, making analysis impossible.

[0049] For virtually all analytical techniques, including ion scattering analysis, the analysis of light elements like Li (lithium), B (boron), C (carbon), and N (nitrogen) is extremely difficult, if not impossible. However, with the growing demand for quantitative analysis of elements like B and Li, which are crucial for the semiconductor and battery industries, analysis of these light elements would be a powerful and unique analytical technique.

[0050] In an ERDA spectrum, when scattered and bounced particles are electrostatically deflected according to energy in a way that only the spectrum of a specific atom can be separated, the angle of deflection is determined according to energy, and since they have the same energy, particles that are deflected at the same angle and enter the detector (90) can be distinguished by the time and location of arrival. In other words, particles of the same energy can be separated by changing a specific angle with an electrostatic deflector to make the arrival location of the detector different according to the energy.

[0051] For example, an electrostatic deflector corresponding to the operating unit (110) may include a first electrode (111) and a second electrode (112) that are spaced apart from each other.

[0052] Fig. 6 is a schematic diagram showing the measuring unit (100) of the present invention. Fig. 7 is a schematic diagram showing the measuring unit (100) of the present invention as viewed from the side. Fig. 8 is a schematic diagram showing the operating unit of the present invention.

[0053] When ion i proceeds along the second path, the first electrode (111) and the second electrode (112) may be placed to face each other with the second path therebetween. At this time, voltages of different values ​​may be applied to the first electrode (111) and the second electrode (112). Preferably, voltages having the same absolute value and opposite polarities may be applied to the first electrode (111) and the second electrode (112). For example, a voltage of 1.7 kV may be applied to the first electrode (111) and the second electrode (112). At this time, a voltage of +0.85 kV may be applied to the first electrode (111), and a voltage of -0.85 kV may be applied to the second electrode (112).

[0054] A slit (130) having a hole (139) through which ions pass may be provided upstream of the first electrode (111) and the second electrode (112) on the second path. The shape of the ions incident on the plate (190) that detects particles with energy may be determined by the hole (139) formed in the slit (130).

[0055] The path of ions incident toward the slit (130) through the sample (10) may correspond to the first path, and the path of ions passing through the slit (130) may correspond to the second path.

[0056] From another perspective, the distance section from the sample (10) to the slit (130) may be defined as the first section x1, and the distance section from the slit (130) to the plate (190) may be defined as the second section x2. At this time, the path of the ions passing through the first section may correspond to the first path. The path of the ions passing through the second section may correspond to the second path.

[0057] The first electrode (111) and the second electrode (112) can be formed in a plate shape.

[0058] The length of the hole (139) in the direction from the first electrode (111) to the second electrode (112) can be formed to be smaller than the distance w between the first electrode (111) and the second electrode (112).

[0059] From another perspective, when a first direction parallel to the second path of ions is defined, the direction from the first electrode toward the second electrode (112) may include a third direction perpendicular to the first direction. At this time, the length of the hole (139) formed in the slit (130) along the third direction may be formed to be smaller than the spacing w between each electrode.

[0060] Spatially speaking, when a three-dimensional space is defined in which three axes, the x-axis, the y-axis, and the z-axis, are orthogonal to each other, the first direction may correspond to the x-axis direction. The second direction may correspond to the y-axis direction. The third direction may correspond to the z-axis direction.

[0061] According to the present embodiment, ions passing through the hole (139) of the slit (130) may be appropriately bent or refracted according to the size of their own energy in response to the electric and magnetic fields formed between the first electrode (111) and the second electrode (112) without colliding with the first electrode (111) or the second electrode (112). When ions are incident in the first direction (x-axis direction) and the first electrode (111) and the second electrode (112) are arranged at different positions in the third direction (z-axis direction) with the ions interposed therebetween, ions passing between the first electrode (111) and the second electrode (112) may be bent or refracted at a unique angle depending on their energy. The refraction angle at this time may correspond to a rotation angle centered on the second direction (y-axis direction) that is perpendicular to the first direction and perpendicular to the third direction.

[0062] The length d of the first electrode (111) extending along the second direction perpendicular to the second path can be formed to exceed the line width id of the ions (having a kind of beam shape, the shape of which varies depending on the shape of the hole through which they pass) passing between the first electrode (111) and the second electrode (112) within a range of 10 times the line width id of the ions.

[0063] The analysis unit (200) may be provided with a detection unit and an analysis unit.

[0064] By means of the operating unit (110), ions can be refracted and divided into multiple ions at different refractive angles depending on the type or energy of the element. The divided ions can be distinguished in terms of the time they are projected onto the plate (190) and in terms of the position at which they are projected onto the plate (190).

[0065] The detection unit can detect the position (irradiation position or arrival position) and arrival time on the plate (190) where the ion of the set line width id has reached.

[0066] The analysis unit can perform element characteristic analysis using at least one of the arrival location and arrival time.

[0067] Figure 9 is a graph of the time of flight (TOF) versus refraction distance for each element on the TOF plate.

[0068] In Fig. 9, distance 0 is the arrival position (X0) on the board when the operating unit (110) is at 0 V, and when a specific voltage is applied to the operating unit, the arrival position can be changed to a position spaced apart from X0 by a certain distance.

[0069] As you can see in the TOF-Distance graph, if you only want to see H (hydrogen), you can keep only the particles with the corresponding arrival time (start point) and eliminate the rest. If there was no deflection, all the atomic and time data would have been combined in a narrow area around the detector (90) range, but after applying a voltage of 1.7 kV to deflection, it was separated into a time graph according to position.

[0070] This invention is capable of analyzing only the hydrogens that do not overlap first, as the bounce elements according to flight time overlap in position (same space), and by separating the position (space) of each element, it is possible to analyze elements that were previously impossible to analyze.

[0071] In the above embodiment, a single operating unit (110) was used, but a method of newly adding a third path is also possible. For example, by adding a new slit (130) and operating unit (110) to the end of the second path, a third path is created, and the plate (190) may be installed at the terminal point of the third path rather than the terminal point of the second path.

[0072] Figure 10 is a flowchart showing the analysis method of the present invention.

[0073] The analysis method of FIG. 10 can be performed by the analysis device (1000) of FIG. 1.

[0074] The analysis method may include a detection step (S 510) and an analysis step (S 530).

[0075] The analysis method of the present invention can be applied in a situation where ions incident through a sample (10) are divided according to the type or energy of the element, and the divided ions are divided in terms of the time at which they are projected onto the plate (190) and in terms of the position at which they are projected onto the plate (190).

[0076] The detection step (S 510) can detect the arrival time and arrival time of a specific ion (beam shape) having a set line width id on the plate (190). The detection step (S 510) can be performed by the detection unit.

[0077] The analysis step (S 530) can analyze the characteristics of an element using at least one of the arrival location and the arrival time. The analysis step (S 530) can be performed by an analysis unit.

[0078] FIG. 11 is a diagram illustrating a computing device according to an embodiment of the present invention. The computing device (TN100) of FIG. 11 may be a device described herein (e.g., an analysis device (1000), an analysis unit (200), etc.).

[0079] In the embodiment of FIG. 11, the computing device (TN100) may include at least one processor (TN110), a transceiver (TN120), and a memory (TN130). In addition, the computing device (TN100) may further include a storage device (TN140), an input interface device (TN150), an output interface device (TN160), and the like. The components included in the computing device (TN100) may be connected by a bus (TN170) to communicate with each other.

[0080] The processor (TN110) can execute program commands stored in at least one of the memory (TN130) and the storage device (TN140). The processor (TN110) may refer to a central processing unit (CPU), a graphics processing unit (GPU), or a dedicated processor in which methods according to embodiments of the present invention are performed. The processor (TN110) may be configured to implement procedures, functions, methods, etc. described in relation to embodiments of the present invention. The processor (TN110) may control each component of the computing device (TN100).

[0081] The memory (TN130) and the storage device (TN140) can each store various information related to the operation of the processor (TN110). The memory (TN130) and the storage device (TN140) can each be configured with at least one of a volatile storage medium and a non-volatile storage medium. For example, the memory (TN130) can be configured with at least one of a read-only memory (ROM) and a random access memory (RAM).

[0082] The transceiver (TN120) can transmit or receive wired or wireless signals. The transceiver (TN120) can be connected to a network to perform communication.

[0083] Meanwhile, the embodiments of the present invention are not implemented only through the devices and / or methods described so far, but may also be implemented through a program that realizes a function corresponding to the configuration of the embodiments of the present invention or a recording medium on which the program is recorded, and such implementation can be easily implemented by a person skilled in the art to which the present invention pertains based on the description of the embodiments described above.

[0084] Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the following claims also fall within the scope of the present invention.

Claims

1. A measuring unit that measures the TOF (Time Of Flight) of ions scattered from a sample and the position of the ions on the plate where they are irradiated; An analysis unit that analyzes the component elements or composition depth distribution of the ion using the TOF and the position; An analysis device having a manipulation unit for manipulating the ions so that the location irradiated on the plate changes depending on the type or energy of the element.

2. In paragraph 1, A first electrode and a second electrode are provided that are spaced apart from each other, When the ions proceed along the second path, the first electrode and the second electrode are placed facing each other with the second path between them, An analysis device in which voltages of different values ​​are applied to the first electrode and the second electrode.

3. In paragraph 2, An analysis device in which voltage values ​​having the same absolute value and opposite polarities are applied to the first electrode and the second electrode.

4. In paragraph 2, The first electrode and the second electrode are formed in a plate shape, An analysis device having a slit formed with a hole through which the ions pass, provided upstream of the first electrode and the second electrode on the second path.

5. In paragraph 4, An analysis device in which the shape of the ions incident on the above plate is determined by the hole formed in the slit.

6. In paragraph 4, An analysis device in which the length of the hole in the direction from the first electrode to the second electrode is formed to be smaller than the distance between the first electrode and the second electrode.

7. In paragraph 2, The first electrode and the second electrode are formed in a plate shape, An analysis device in which the length of the first electrode extending perpendicularly to the second path is formed to exceed the line width of the ions passing between the first electrode and the second electrode within a range of 10 times the line width of the ions.

8. In paragraph 1, An analysis device having an electrostatic deflector provided in the above operating section to electrostatically deflect scattered ions according to energy.

9. In paragraph 1, A detection and analysis department is established, The ions are divided according to energy by the above operating unit, An analysis device in which the divided ions are distinguished in time as they are projected onto the plate and in position as they are projected onto the plate.

10. In paragraph 9, The above detection unit detects the arrival location and arrival time on the plate where ions of the set line width have arrived, The above analysis unit is an analysis device that performs characteristic analysis of the element using at least one of the arrival location and the arrival time.

11. In paragraph 1, A first electrode and a second electrode are provided that are spaced apart from each other, When the ions proceed along the second path, the first electrode and the second electrode are placed facing each other with the second path between them, A new slit and a new operating section are additionally provided to create a third path at the end of the second path. An analysis device in which the plate is installed at the terminal point of the third path rather than the terminal point of the second path.

12. In paragraph 1, An analytical device in which an electrostatic deflector is placed on the path of ions scattered from the sample.

13. In paragraph 1, An electrostatic deflector is placed on the path of ions scattered from the above sample, The above analysis unit is an analysis device that analyzes the spectrum of ions projected onto the plate through the electrostatic deflector.

14. An analysis method in which only the non-overlapping hydrogen that is output first can be analyzed due to the phenomenon in which scattered ions overlap at the same location according to the flight time, by placing an electrostatic deflector on the path of the scattered ions and separating the projection location of each element projected onto the plate.

15. In an analysis method performed by an analysis device, When the ions scattered from the sample and incident are divided according to the type or energy of the element, and the divided ions are divided in terms of the time they are projected onto the plate, and at the same time, they are divided in terms of the position they are projected onto the plate, A detection step for detecting the arrival position and arrival time of a specific ion having a set line width on the plate; An analysis step of analyzing the characteristics of the element using at least one of the arrival location and the arrival time; Analysis method including.

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