Heating device and semiconductor processing apparatus

Abstract

Disclosed in the present application are a heating device and a semiconductor processing apparatus. The heating device is located on one side of a base in a height direction, and has a central region and a plurality of annular regions; and the heating device comprises, in each annular region, a plurality of heating lamps, which are evenly arranged in the circumferential direction of the annular region, and an annular reflecting plate, which is located on the sides of the plurality of heating lamps away from the base, and the heating device comprises reflecting assemblies, which are respectively located on the sides of the annular regions close to the central region, wherein each reflecting assembly comprises a plurality of reflecting plates, which correspond on a one-to-one basis to the plurality of heating lamps in the corresponding annular region; the reflecting plates extend in a direction from the annular reflecting plates to the base, so as to limit light from the corresponding heating lamps to be irradiated on preset regions of the base; and the reflecting assemblies are configured to make the preset regions corresponding to the plurality of heating lamps be located in different radial ranges of the base. In the present application, light can be prevented from being concentratedly irradiated on the same region and causing a cliff-like distribution of the illumination in a radius direction, thereby realizing a gradual change in light intensity, such that the uniformity of heating can be improved.

Description

Heating device and semiconductor processing equipment Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, and in particular to a heating device and semiconductor processing equipment. Background Art

[0002] Chemical Vapor Deposition (CVD) silicon epitaxy uses CVD technology to grow a thin silicon film on a silicon-based substrate (such as a wafer). Specifically, reactant gases are controlled to flow through a heated wafer, where they react chemically to form silicon, which then forms a thin film on the wafer surface.

[0003] Figure 1 shows a schematic diagram of the structure of a conventional CVD epitaxial growth apparatus. The top and bottom plates of a process chamber 10a are made of transparent materials. An upper heating device 20a and a lower heating device 30a, both using infrared light, are located on the upper and lower sides of the process chamber 10a, respectively. A substrate 101a is placed on a susceptor 11a within the process chamber 10a. The upper heating device 20a directly heats the surface of the substrate 101a, while the lower heating device 30a indirectly heats the susceptor 11a.

[0004] The temperature distribution on the surface of substrate 101a significantly affects the thickness, resistivity, and slip line distribution of the silicon epitaxial layer. High-temperature regions result in higher epitaxial layer growth rates and, consequently, thicker layers. During the heating process of substrate 101a, the lower heating device 30a directly heats susceptor 11a, which in turn indirectly heats substrate 101a through heat conduction from susceptor 11a. This heat conduction results in a relatively uniform distribution of heat. Light from the upper heating device 20a, however, directly impacts substrate 101a, and its illumination distribution plays a dominant role in determining the temperature distribution on the surface of substrate 101a.

[0005] The existing upper heating device 20a has problems such as large local temperature difference and uneven temperature field on the surface of the substrate 101a.

[0006] Summary of the Invention

[0007] In response to the above technical problems, the present application provides a heating device and a semiconductor processing equipment, which can improve the problem of uneven temperature field generated by the existing upper heating device.

[0008] To solve the above technical problems, in a first aspect, embodiments of the present application provide a heating device for heating a susceptor in a semiconductor chamber, wherein the heating device is located on one side of the susceptor in a height direction, and comprises a central region and a plurality of annular regions sequentially surrounding the central region from the central region.

[0009] The heating device includes a plurality of heating lamps uniformly arranged along the circumference of each annular region and an annular reflector located on a side of the plurality of heating lamps away from the base; and a reflector assembly located on a side of each annular region close to the central region; the reflector assembly includes a plurality of reflectors corresponding one to one to the plurality of heating lamps in the corresponding annular region;

[0010] The reflective plate extends from the annular reflective plate toward the base to limit the light of the corresponding heating lamp to be irradiated within a preset area of ​​the base;

[0011] The reflective assembly is used to make the preset areas corresponding to the multiple heating lamps located within different radial ranges of the base; wherein the central axis of the annular area is coaxial with the central axis of the base.

[0012] In some embodiments, each of the reflective plates in the reflective assembly is parallel to the central axis of the base; or,

[0013] The included angles between the reflective plates and the central axis of the base are the same.

[0014] In some embodiments, the plurality of heating lamps within the same annular region have the same height;

[0015] The distance between one end of the reflective plate close to the base and the base is the first height of the reflective plate, and the first heights of the multiple reflective plates belonging to the same reflective assembly are not completely the same.

[0016] In some embodiments, in the same reflective assembly, the first heights of any two adjacent reflective plates are different.

[0017] In some embodiments, the heating device further includes a driver for adjusting the height of each of the reflective plates.

[0018] In some embodiments, the plurality of heating lamps within the same annular region have the same height;

[0019] The distance between one end of the reflective plate close to the base and the base is the first height of the reflective plate, and the first heights of the multiple reflective plates belonging to the same reflective assembly are the same;

[0020] In each of the reflective assemblies, at least a portion of the reflective plates is provided with light-through holes, and the distance between the light-through holes and the base is smaller than the distance between the corresponding heating lamps and the base.

[0021] In some embodiments, in each of the reflective components, the distances between two adjacent light holes and the base are different.

[0022] In some embodiments, in two adjacent annular areas, along the same radial direction, the distance between the heating lamp in the outer annular area and the base is smaller than the distance between the heating lamp in the inner annular area and the base.

[0023] In some embodiments, in two adjacent annular regions, along the same radial direction, the first height of the reflective plate in the outer annular region is smaller than the first height of the reflective plate in the inner annular region.

[0024] In some embodiments, in each of the annular regions, the reflective component is symmetrical about the center of the annular region.

[0025] In some embodiments, the heating device further comprises a circular reflective plate disposed in the central area, and the reflective assembly located in the innermost annular area is disposed around the circular reflective plate;

[0026] Furthermore, the distance between the circular reflective plate and the base is greater than the first height of any reflective plate in the reflective assembly located in the innermost annular area.

[0027] In a second aspect, an embodiment of the present application provides a semiconductor processing device, comprising a semiconductor chamber, and further comprising a heating device as described in the above embodiments located above and / or below the semiconductor chamber, wherein the heating device is used to heat the base in the semiconductor chamber during the process.

[0028] As described above, in the heating device of the present application, the annular reflector is arranged on the side of the heating lamp away from the base, and the reflective assembly is arranged on the side of the annular area close to the central area. The heating lamp is surrounded and reflected by the annular reflector and the reflective assembly, and is irradiated in the direction of the base to heat the base. The light emitted downward by the entire heating device tends to form a plurality of apertures, which can achieve independent control of the light intensity at different radial positions. Since the reflective assembly includes a plurality of reflective plates corresponding to the plurality of heating lamps in the corresponding annular area, the reflective plate extends from the annular reflector toward the base. Each reflective plate can limit the light of the corresponding heating lamp to a preset area of ​​the base, so that the same circle of heating lamps can be irradiated to positions of different radii, avoiding the light from being concentrated in the same area and causing the light to be distributed in a cliff-like manner along the radial direction, thereby achieving a gradual change in light intensity and improving the uniformity of heating. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings herein are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for describing the embodiments. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without inventive work.

[0030] FIG1 is a schematic structural diagram of an existing CVD epitaxial device;

[0031] FIG2 is a schematic structural diagram (bottom view) of an upper heating device provided in a comparative example of the present application;

[0032] FIG3 is a schematic structural diagram (bottom view) of a heating device provided in an embodiment of the present application;

[0033] FIG4 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring heating lamp in FIG3 ;

[0034] FIG5 is a side structural schematic diagram of FIG3;

[0035] FIG6 is a schematic structural diagram of a semiconductor processing device provided in an embodiment of the present application;

[0036] FIG7 is a schematic structural diagram of a reflective plate provided in an embodiment of the present application with notches of different depths;

[0037] FIG8 is a schematic top view of a reflective assembly according to an embodiment of the present application;

[0038] FIG9 is a schematic structural diagram of light-through holes at different heights provided on a reflective plate according to an embodiment of the present application;

[0039] FIG10 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring heating lamp in FIG5.

[0040] The purpose of this application, its features, and advantages will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and the accompanying text are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of this application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0041] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0042] It should be noted that, in this document, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0043] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0044] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are merely used to distinguish information of the same type from one another. For example, first information could also be referred to as second information, and similarly, second information could also be referred to as first information without departing from the scope of this document. Depending on the context, as used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context indicates otherwise.

[0045] It should be understood that the terms "top", "bottom", "up", "down", "vertical", "horizontal", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0046] For ease of description, the following embodiments are all described using the orthogonal space formed by the horizontal plane and the vertical direction as an example. This premise should not be understood as a limitation to the present application.

[0047] Please refer to Figure 2, which is a schematic diagram (bottom view) of the structure of an upper heating device provided in the comparative example of this application. Please refer to Figure 1 at the same time. The upper heating device 20a includes a plurality of heating lamps 21a and a reflective plate 22a arranged above and around the plurality of heating lamps 21a. The reflective plate 22a located above the plurality of heating lamps 21a is parallel to the base 11a of the process chamber 10a. The reflective plate 22a can reflect the light emitted by the heating lamps 21a toward the reflective plate 22a toward the surface of the substrate 101a to improve the heating efficiency and the effective utilization rate of light. Since the reflective plate 22a will enhance the light at certain radii due to reflection and weaken the light at other radii due to shielding, the above phenomenon will result in a significant difference in light illumination on both sides of a specific radius, resulting in a large local temperature difference and an uneven temperature field on the surface of the substrate 101a.

[0048] Moreover, all the heating lamps 21a can be arranged in a circle, and a slope structure is set on the reflecting surface of the reflecting plate 22a for every three heating lamps 21a, so that the reflected light of a heating lamp 21a corresponding to the slope structure (the heating lamp is distinguished from other heating lamps by a section line) can be irradiated toward the central area of ​​the substrate 101a to adjust the distribution of light.

[0049] In the upper heating device 20a, the only adjustable light source is the reflected light from the heating lamp 21a corresponding to the inclined structure. This solution can only slightly adjust the temperature field, and the process range covered is relatively small. Based on this, the present application provides a heating device and semiconductor processing equipment with adjustable temperature field distribution.

[0050] Please refer to Figures 3 to 5. Figure 3 is a schematic diagram of the structure of a heating device provided in an embodiment of the present application (bottom view), Figure 4 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring heating lamp in Figure 3, and Figure 5 is a schematic diagram of the side structure of Figure 3. The heating device is used to heat the base in the semiconductor chamber. When the heating device is installed in the semiconductor chamber, it is arranged on one side of the base in the height direction. For example, please refer to Figure 6 at the same time. The heating device can be arranged outside the semiconductor chamber 100 or inside the semiconductor chamber 100. It can be arranged directly above the base 130 or directly below the base 130, or there can be two heating devices, which are respectively arranged above and below the base 130.

[0051] The heating device has a central region 301 and a plurality of annular regions 302 surrounding the central region 301. The heating device includes a plurality of heating lamps 40 evenly arranged along the circumference of each annular region 302, and an annular reflector 10 located on the side of the plurality of heating lamps 40 away from the base 130. Specifically, if the heating device is located directly above the base 130, the annular reflector 10 is located above the plurality of heating lamps 40; if the heating device is located directly below the base 130, the annular reflector 10 is located below the plurality of heating lamps 40.

[0052] The heating device also includes a reflective component 30 located on one side of each annular area 302 close to the central area 301; the reflective component 30 includes a plurality of reflective plates 31 corresponding one to one to the plurality of heating lamps 40 in the corresponding annular area 302; the reflective plates 31 extend from the annular reflective plate 10 toward the base 130 to limit the light of the corresponding heating lamp 40 to the preset area of ​​the base 130; the reflective component 30 is used to make the preset areas corresponding to the multiple heating lamps 40 located within different radial ranges of the base; wherein, the central axis of the annular area 302 is coaxial with the central axis of the base.

[0053] For example, two annular areas 302 (302A and 302B) are provided, namely an outer annular area 302A and an inner annular area 302B. Multiple heating lamps 40 are provided in each of the two annular areas 302. For example, 32 heating lamps 40A can be evenly distributed in the outer annular area 302A, and 8 heating lamps 40B can be evenly distributed in the inner annular area 302B. In specific applications, the number of heating lamps 40 provided in each annular area 302 is set according to heating needs. As an example, the heating lamps 40 can be infrared heating lamps.

[0054] Correspondingly, two annular reflection plates 10 can also be provided, namely an annular reflection plate 10A corresponding to the outer annular area 302A, and an annular reflection plate 10B corresponding to the inner annular area 302B. The annular reflection plate 10A on the side of the heating lamp 40A away from the base 130 can reflect the light of the heating lamp 40A to the corresponding area of ​​the base 130, and the annular reflection plate 10B on the side of the heating lamp 40B away from the base 130 can reflect the light of the heating lamp 40B to the corresponding area on the base 130.

[0055] Correspondingly, two reflective components 30 are also provided, namely, a reflective component 30A corresponding to the outer ring area 302A, and a reflective component 30B corresponding to the inner ring area 302B. The reflective component 30B is arranged on the side of the inner ring area 302B close to the central area 301; the reflective component 30A is arranged on the side of the outer ring area 302A close to the central area 301.

[0056] The reflective assembly 30 includes a plurality of reflective plates 31 corresponding one-to-one to the plurality of heating lamps 40 within the corresponding annular area 302. For example, when the outer annular area 302A is provided with 32 heating lamps 40A, the reflective assembly 30A includes 32 reflective plates 31. When the inner annular area 302B is provided with 8 heating lamps 40B, the reflective assembly 30B includes 8 reflective plates 31. The reflective plates 31 extend from the annular reflective plate 10 toward the base 130 to limit the light irradiated by the corresponding heating lamps 40 to a predetermined area of ​​the base 130. In other words, the reflective plates 31 can limit the irradiation range of the heating lamps 40 toward the central area of ​​the base 130 from the inside, ultimately allowing the light from the multiple heating lamps 40 to irradiate within different radial ranges of the base 130.

[0057] The operating principle of the heating device of this embodiment is as follows: the annular reflector plate 10 is positioned on the side of the heating lamps 40 away from the base 130, and the reflective assembly 30 is positioned on the side of the annular region 302 near the center region 301. Surrounded and reflected by the annular reflector plate 10 and the reflective assembly 30, the heating lamps 40 illuminate the base 130, heating it. The downwardly emitted light from the entire heating device tends to form a plurality of apertures, enabling independent control of light intensity at different radial positions. Because the reflective assembly 30 includes a plurality of reflective plates 31 corresponding to the plurality of heating lamps 40 within the corresponding annular region 302, and the reflective plates 31 extend from the annular reflector plate 10 toward the base 130, each reflective plate 31 can limit the light from the corresponding heating lamp 40 to a predetermined area of ​​the base 130. This allows the same circle of heating lamps 40 to illuminate locations at different radii, preventing light from concentrating on the same area and causing a radially abrupt distribution of light. This allows for a gradual change in light intensity, thereby improving heating uniformity.

[0058] It is understandable that, for the outermost annular region 302 , a reflective assembly 30 may be further provided around its outer diameter to confine the light of the heating lamp 40 within the heating device.

[0059] In this embodiment, the angle of the reflective assembly 30 in the vertical direction is not limited. As some examples, each reflective plate 31 in the reflective assembly 30 can be parallel to the central axis of the base 130, or can have the same angle with the central axis of the base 130. For example, each reflective plate 31 is inclined from top to bottom toward the central axis of the base 130 at a preset angle (such as 10°), or is inclined away from the central axis of the base 130 at a preset angle. Combined with the vertical length setting of the reflective plate 31, the installation height setting of the heating lamp 40, etc., it is possible to achieve that the same circle of heating lamps 40 irradiate positions of different radii of the base 130. The present application is further described in detail with specific embodiments below.

[0060] In one embodiment, referring to Figures 4 and 5 , the multiple heating lamps 40 within the same annular region 302 have the same height. When the heating device is installed in a semiconductor chamber, the distance between the end of the reflector 31 proximate the base 130 and the base 130 is the first height H of the reflector 31. The first heights H of the multiple reflectors 31 within the same reflective assembly 30 are not identical. For example, in Figure 4 , the first heights of reflectors 31B and 31A differ by H0, thereby forming notches 311 in the reflective assembly 30. The corresponding heating lamps 40 on reflector 31A can illuminate locations at different radii of the base 130 through the notches 311, achieving a gradual change in light intensity within that radius. By setting the first height H of each reflector 31 to form multiple notches 311, the reflective assembly 30 can form a sawtooth structure as shown in Figure 4. For example, within the same annular region 302, a notch 311 is provided for every other heating lamp 40A, with the notch 311 and the projection of the corresponding heating lamp 40A on the annular region 302 being located on the same radius. The irradiation radius varies with the depth H0 of the notch 311. The notch 311 on the reflector 31 can expand the irradiation radius of the heating lamp 40A, achieve a gradual change in light intensity, and improve heating uniformity.

[0061] It should be noted that the reflective assembly 30 can be an integrated structure or can be composed of multiple reflective plates 31 spliced ​​together in sequence, as shown in Figure 8. By setting the vertical lengths of two adjacent reflective plates 31 to be unequal, a gap 311 can be formed. The specific molding method of the reflective assembly 30 is not particularly limited in this embodiment of the application.

[0062] It should be emphasized that the depth H0 of the notches 311 can vary depending on the shape and height of the reflector 31, and the locations of the notches 311 on the reflector assembly 30 can be random and non-periodic. Furthermore, the shape of the notches 311 is not limited to the rectangular shape shown in the figure, and can also be, for example, triangular, arc-shaped, or a combination of different shapes.

[0063] For example, any two adjacent reflective plates 31 in the same reflective assembly 30 may have different first heights H, thereby forming a regular sawtooth structure and improving heating uniformity. Furthermore, within each annular region 302, the reflective assembly 30 is preferably symmetrical about the center of the annular region 302. This allows the symmetrically positioned heating lamps 40 to heat the same radial range of the base 130, thereby symmetrically adjusting the illumination range to improve temperature uniformity.

[0064] As an example, in two adjacent annular areas 302, along the same radial direction, the first height of the reflector 31 in the outer annular area 302 is smaller than the first height of the reflector 31 in the inner annular area 302. This can prevent the heating lamp 40 from radiating outward and reducing heating efficiency.

[0065] In one embodiment, referring to FIG. 5 , within two adjacent annular regions 302, along the same radial direction, the distance L between the heating lamps 40 in the outer annular region 302 and the base 130 is smaller than the distance L between the heating lamps 40 in the inner annular region 302 and the base 130. Because locations closer to the center of the base 130 are illuminated by more heating lamps 40, arranging the inner heating lamps 40 further from the base 130 balances this uneven heating, thereby improving heating uniformity across the base 130.

[0066] In one embodiment, referring to Figures 3 and 5 , the heating device may further include a circular reflective plate 20 disposed in the central region 301. The reflective assembly 30 located in the innermost annular region 302 is disposed around the circular reflective plate 20, and a distance S between the circular reflective plate 20 and the base 130 is greater than a first height H of any reflective plate 31 in the reflective assembly 30 located in the innermost annular region 302. By arranging the circular reflective plate 20 at a position higher than any reflective plate 31 in the reflective assembly 30 located in the innermost annular region 302, obstruction of the heating lamp in the inner annular region 302 by the circular reflective plate 20 can be reduced.

[0067] For ease of description, please refer to Figures 6 and 7. Figure 6 is a structural schematic diagram of a semiconductor processing device provided by an embodiment of the present application, and Figure 7 is a structural schematic diagram of a reflective plate provided by an embodiment of the present application with notches of different depths. The heating device provided by the present application is applied to the semiconductor processing device. Taking the heating device located above the base 130 as an example, the surface at a preset distance L0 below the circular ring area of ​​the annular reflective plate 10 is set as the target plane 102. When applied, the target plane 102 can be the top surface of the heated part (such as a substrate), that is, after the heated part is loaded onto the base 130, the distance between the top surface of the heated part and the bottom surface of the annular reflective plate 10 is L0. The point on the target plane 102 that is opposite to the center of the annular area 302 is set as the center point O, and the intersection of the light emitted by the heating lamp 40 corresponding to the notch 311 through the notch 311 and the target plane 102 is set as the target point A. As some examples, for example, the depth of at least one notch 311 satisfies the requirement that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on the same side of the center point O, as shown in view a of FIG7 . As described above, the notches 311 are preferably arranged in pairs symmetrically relative to the center point O. The figure illustrates two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through their respective corresponding notches 311. Through the notches 311, the illumination radius of the corresponding heating lamp 40 is expanded toward the center point O, preventing all light from radiating on the same radius and achieving a gradual change in illumination intensity.

[0068] For another example, the depth of at least one notch 311 can be such that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on either side of the center point O, as shown in view c of FIG7 . Similarly, the figure illustrates two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through their respective corresponding notches 311. Due to the deeper notches 311, the heating lamp 40 can illuminate the other side of the center point O through the corresponding notch 311, thus providing a larger illumination radius for the heating lamp 40 and achieving a gradual change in light intensity.

[0069] For another example, the depth of at least one notch 311 can be such that the target point A corresponding to the notch 311 coincides with the center point O, as shown in view b of FIG7 . Similarly, the figure illustrates two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through their respective notches 311. The heating lamps 40 illuminate the center point O through their corresponding notches 311, meaning that the target point A coincides with the center point O.

[0070] In actual application, the depth of the notch 311 can be selected from the three settings corresponding to view a, view b, and view c in Figure 7. One of them can be selected, or two or three can be combined. The temperature field can be regulated by controlling the switch and power of the heating lamp 40 corresponding to different notches 311.

[0071] In one embodiment, referring to FIG6 , the heights of the plurality of heating lamps 40 belonging to the same annular area 302 are the same, and the first heights H of the plurality of reflective plates 31 belonging to the same reflective assembly 30 are not exactly the same. The heating device may further include a driver 50, which is used to adjust the height of each reflective plate 31. For example, the driver 50 may be a motor. The driver 50 may be provided in a one-to-one correspondence with the reflective plates 31, or the two heating lamps 40 in symmetrical positions may be raised and lowered by the same driver 50. When the temperature field needs to be adjusted significantly, each reflective plate 31 may be raised and lowered by the driver 50 to achieve a wider process coverage range.

[0072] Furthermore, referring to FIG6 , the heating device may further include a controller 60 , which may individually control the switch and heating power of each heating lamp 40 , thereby adjusting the temperature field in a wider range.

[0073] In one embodiment, light holes 312 can also be provided on the reflective plate 31 to change the radial illumination range of the heating lamps. Referring to Figures 9 and 10, Figure 9 is a schematic diagram of a reflective plate with light holes at different heights provided in an embodiment of the present application, and Figure 10 is an expanded cross-sectional view of the reflective assembly corresponding to the outer annular region in Figure 5. In this solution, the multiple heating lamps 40 within the same annular region 302 have the same height, and the multiple reflective plates 31 within the same reflective assembly 30 have the same first height H, which can simplify the manufacturing process of the reflective assembly 30. In each reflective assembly 30, at least some of the reflective plates 31 are provided with light holes 312, and the distance between the light holes 312 and the base 130 is less than the distance between the corresponding heating lamps 40 and the base 130. This ensures that light from the heating lamps 40 can pass through the corresponding light holes 312 and irradiate downward to heat the base 130.

[0074] In Figure 9, from view a to view c, relative to view a, after the light holes 312A and 312B are set, the heating lamp 40 can illuminate areas of different radii on the target plane 102, and as the height of the light holes 312 increases, the irradiation radius of the heating lamp 40 also changes accordingly. The setting of the light holes 312 can expand the irradiation range of the heating lamp 40 on the target plane 102, avoiding the local concentration of the heating lamps 40, irradiating at the same radius, thereby reducing local temperature differences and achieving a gradual change in light intensity. Each view in Figure 9 illustrates a schematic diagram of two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through their corresponding light holes 312.

[0075] For example, in each reflective assembly 30, the distances between two adjacent light holes 312 and the base 130 are different, so that two adjacent heating lamps 40 can illuminate different radial ranges, achieving a gradual change in light intensity to improve heating uniformity.

[0076] The embodiment of the present application also provides a semiconductor processing device, please refer to Figure 6, the semiconductor processing device includes a semiconductor chamber 100, and a heating device arranged outside the semiconductor chamber 100. For example, an upper heating device 200 can be set above the semiconductor chamber 100, and / or a lower heating device 300 can be set below the semiconductor chamber 100. The upper heating device 200 and the lower heating device 300 can both adopt the heating devices described in the above embodiments. The heating device is used to heat the base 130 in the semiconductor chamber 100 during the process. As an example, the top plate 110 and the bottom plate 120 of the semiconductor chamber 100 can be made of transparent materials, such as quartz. A base 130 for supporting a substrate is provided in the semiconductor chamber 100. During the process, the lower heating device 300 heats the base 130 through the bottom plate 120, and the upper heating device 200 heats the substrate through the top plate 110. The semiconductor processing device can be a CVD silicon epitaxial device.

[0077] For other working principles and processes of the semiconductor processing equipment of this embodiment, please refer to the description of the heating device in the aforementioned embodiment of the present invention, which will not be repeated here.

[0078] The above describes in detail a heating device and semiconductor processing equipment provided by this application. This article uses specific examples to illustrate the principles and implementation methods of this application. It should be noted that in this application, the descriptions of each embodiment have their own emphases. For portions not detailed or recorded in one embodiment, please refer to the relevant descriptions of other embodiments.

[0079] The above are only preferred embodiments of the present application and do not limit the patent scope of the present application. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, all possible combinations of the various technical features in the above embodiments are not described. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, as long as there is no contradiction in the combination of these technical features, are also included in the patent protection scope of the present application.

Claims

1. A heating device for heating a susceptor in a semiconductor chamber, characterized in that: The heating device is located on one side of the base in the height direction, and the heating device has a central area and a plurality of annular areas surrounding the central area in sequence from the central area outwards; The heating device comprises a plurality of heating lamps uniformly arranged along the circumference of each annular region and an annular reflecting plate located on a side of the plurality of heating lamps away from the base; and a reflecting assembly located on a side of each annular region close to the central region; the reflecting assembly comprises a plurality of reflecting plates corresponding to the plurality of heating lamps in the corresponding annular region; The reflective plate extends from the annular reflective plate toward the base to limit the light of the corresponding heating lamp to be irradiated within a preset area of ​​the base; The reflective assembly is used to make the preset areas corresponding to the multiple heating lamps located within different radial ranges of the base; wherein the central axis of the annular area is coaxial with the central axis of the base.

2. The heating device according to claim 1, characterized in that Each of the reflective plates in the reflective assembly is parallel to the central axis of the base; or, The included angles between each of the reflective plates and the central axis of the base are the same.

3. The heating device according to claim 2, characterized in that: The plurality of heating lamps in the same annular area have the same height; The distance between one end of the reflective plate close to the base and the base is the first height of the reflective plate, and the first heights of the multiple reflective plates belonging to the same reflective assembly are not completely the same.

4. The heating device according to claim 3, characterized in that: In the same reflection assembly, the first heights of any two adjacent reflection plates are different.

5. The heating device according to claim 3, characterized in that: It also includes a driver for adjusting the lifting and lowering of each of the reflecting plates.

6. The heating device according to claim 2, characterized in that: The plurality of heating lamps in the same annular area have the same height; The distance between one end of the reflective plate close to the base and the base is the first height of the reflective plate, and the first heights of the multiple reflective plates belonging to the same reflective assembly are the same; In each of the reflective components, at least a portion of the reflective plates are provided with light-through holes, and the distance between the light-through holes and the base is smaller than the distance between the corresponding heating lamps and the base.

7. The heating device according to claim 6, characterized in that: In each of the reflective components, the distances between two adjacent light-through holes and the base are different.

8. The heating device according to any one of claims 1 to 7, characterized in that: In two adjacent annular regions, along the same radial direction, the distance between the heating lamp in the outer annular region and the base is smaller than the distance between the heating lamp in the inner annular region and the base.

9. The heating device according to any one of claims 1 to 7, characterized in that: In two adjacent annular regions, along the same radial direction, the first height of the reflective plate in the outer annular region is smaller than the first height of the reflective plate in the inner annular region.

10. The heating device according to any one of claims 1 to 7, characterized in that: In each of the annular regions, the reflective components are symmetrical about the center of the annular region.

11. The heating device according to any one of claims 1 to 7, characterized in that: It also includes a circular reflective plate disposed in the central area, and the reflective assembly located in the innermost annular area is disposed around the circular reflective plate; Furthermore, the distance between the circular reflective plate and the base is greater than the first height of any reflective plate in the reflective assembly located in the innermost annular area.

12. A semiconductor processing device, comprising a semiconductor chamber, characterized in that: It also includes a heating device as described in any one of claims 1 to 11, which is located above the semiconductor chamber and / or below the semiconductor chamber, and the heating device is used to heat the susceptor in the semiconductor chamber during the process.

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