Method of preventing pattern collapse
WO2025010125A1PCT designated stage expired Publication Date: 2025-01-09TOKYO ELECTRON LTD +1
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Patent Information
- Application Number
- PCT/US2024/033310
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-07-06
- Filing Date
- 2024-06-10
- Publication Date
- 2025-01-09
Smart Images
Figure US2024033310_09012025_PF_FP_ABST
Abstract
A method of microfabrication includes forming a sacrificial layer over a film. A resist layer is formed over the sacrificial layer. The resist layer includes an extreme ultraviolet (EUV) resist. A pattern is formed in the resist layer by an EUV exposure and a wet etch followed by rinsing and drying, resulting in uncovered portions of the sacrificial layer. The uncovered portions of the sacrificial layer are treated. The pattern is transferred from the resist layer to the film by performing an etch process.
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