Film for semiconductor package, and manufacturing method therefor

Abstract

A film for a semiconductor package, according to one embodiment of the present invention, comprises a base film having sprocket holes arranged in a first direction in an edge region, which is in the vicinity of a main region, wherein the edge region is adjacent to the main region in a second direction, which crosses the first direction. In addition, the present invention comprises: a circuit wiring arranged in the main region; and a support member, which is arranged on the base film and is adjacent to the sprocket holes in the edge region. The support member includes: a support extending in the first direction; and protective walls, which are connected to the support and are spaced apart from each other with the sprocket holes therebetween.

Description

Film for semiconductor packaging and method for manufacturing the same

[0001] The present invention relates to a film for a semiconductor package, and more specifically, to a film for a semiconductor package and a method for manufacturing the same.

[0002] Recently, with the development of the flat panel display industry, such as LCD (Liquid Crystal Display) for mobile phones, TFT LCD (Thin Film Transistor LCD) for computers, and PDP (Plasma Display Panel) for home use, the manufacturing industry for tape packages, which are drive IC components of flat panel displays, is also developing. These tape packages require wiring patterns with thinner line widths as flat panel displays become thinner. These tape packages are semiconductor packages that utilize a tape substrate, and can be divided into Tape Carrier Package (TCP) and Chip On Film (COF) packages. TCP has a structure in which a semiconductor chip is mounted on the inner lead exposed by the window of the tape substrate using the Inner Lead Bonding (ILB) method. COF packages have a structure in which a semiconductor chip is mounted on a tape substrate without a window using the flip chip bonding method.

[0003] Such tape packages are manufactured by moving the tape wiring board from reel to reel, and the movement of the tape wiring board is achieved through sprocket holes formed at regular intervals on the edge areas on both sides of the tape wiring board. At this time, the tape wiring board moves under a predetermined tensile force, and the area where the sprocket holes are formed is relatively vulnerable to stress, so deformation of the sprocket holes may cause defects such as warping or tearing of the tape wiring board.

[0004] The above-described content is only intended to help understand the background technology for the technical ideas of the present invention, and therefore cannot be understood as content corresponding to prior art known to those skilled in the art in the technical field of the present invention.

[0005] Embodiments of the present invention provide a semiconductor package film that is relatively robust against external stress and a method for manufacturing the same. For example, even when a relatively high tensile force is applied to the semiconductor package film when it is conveyed by a pin roller, deformation of sprocket holes and / or their surrounding areas can be eliminated or at least minimized.

[0006] According to one embodiment of the present invention, a film for a semiconductor package comprises: a base film having sprocket holes arranged in a first direction in an edge region around a main region, the edge region being adjacent to the main region in a second direction intersecting the first direction; circuit wiring arranged in the main region; and a support member arranged on the base film and adjacent to the sprocket holes in the edge region.

[0007] The support member includes a support extending in the first direction; and protective walls connected to the support and spaced apart from each other with the sprocket holes therebetween.

[0008] The above protective walls are arranged in the first direction, and each of the above protective walls can extend from the support in a second direction intersecting the first direction.

[0009] The above sprocket holes can be arranged between the support and the main area.

[0010] Each of the above sprocket holes may be partially surrounded by two of the above protective walls and a portion of the support.

[0011] The width in the first direction between adjacent protective walls among the above protective walls may be greater than the width in the first direction of one of the sprocket holes.

[0012] It may further include a reinforcing film attached to the lower surface of the base film, and the sprocket holes may be characterized in that they penetrate the base film and the reinforcing film.

[0013] The above reinforcing film may include a synthetic resin material.

[0014] The above support and the above protective wall may comprise copper.

[0015] A film for a semiconductor package having first and second edge regions and a main region disposed between the first and second edge regions, comprising: a base film having first sprocket holes arranged in a first direction in the first edge region, and second sprocket holes arranged in the first direction in the second edge region, wherein the first and second edge regions are spaced apart from each other in a second direction intersecting the first direction; a first support member disposed on the base film and adjacent to the first sprocket holes in the first edge region; And a second support member disposed on the base film and adjacent to the second sprocket holes in the second edge region, wherein the first support member includes a first support extending in the first direction, and first protective walls connected to the first support and spaced apart from the first sprocket holes, and the second support member may include a second support extending in the first direction, and second protective walls connected to the second support and spaced apart from the second sprocket holes.

[0016] The width in the first direction between adjacent protective walls among the above protective walls may be substantially equal to the width in the first direction of one of the sprocket holes.

[0017] Another aspect of the present invention relates to a method for manufacturing a film for a semiconductor package. The method comprises the steps of: forming a multilayer structure including a base film and a copper layer, wherein the multilayer structure includes a main region and an edge region adjacent to the main region in a first direction; forming sprocket holes arranged in a second direction intersecting the first direction in the edge region; forming a photoresist pattern on the copper layer; and forming a support member by removing at least a portion of the copper layer using the photoresist pattern, wherein the support member includes a support member extending in the second direction; and protective walls connected to the support member and spaced apart from each other with the sprocket holes therebetween.

[0018] A step of attaching a reinforcing film to the lower surface of the base film may be further included.

[0019] The above supports and the above protective walls may comprise copper.

[0020] The step of forming the above support member may include a step of wet etching the copper layer using the photoresist pattern as a mask.

[0021] The above support member can protect the sprocket holes and the film for the semiconductor package from external stress.

[0022] According to embodiments of the present invention, a film for a semiconductor package that is relatively robust against external stress and a method for manufacturing the same are provided.

[0023] The effects according to the embodiments are not limited to those exemplified above, and more diverse effects are included in the present specification.

[0024] FIG. 1 is a schematic perspective view showing a film for a semiconductor package according to an embodiment of the present invention.

[0025] FIG. 2 is a schematic perspective view showing a film for a semiconductor package according to another embodiment of the present invention.

[0026] FIG. 3 is a schematic perspective view showing a film for a semiconductor package according to another embodiment of the present invention.

[0027] Figure 4 is a schematic drawing showing an example of a shape that a semiconductor package film may be deformed into when force is applied during transport to a general semiconductor package film.

[0028] Figure 5 is a schematic perspective view showing the support and corresponding protective walls of Figure 1.

[0029] FIG. 6 is a flowchart showing an example of a method for manufacturing a film for a semiconductor package of FIG. 1.

[0030] Fig. 7 is a schematic cross-sectional view along line II` of the film for semiconductor packaging in S610 of Fig. 6.

[0031] Fig. 8 is a schematic cross-sectional view along line II` of the film for semiconductor packaging in S620 of Fig. 6.

[0032] FIGS. 9 and 10 are schematic cross-sectional views along line II` of the film for semiconductor packaging in S630 of FIG. 6.

[0033] FIG. 11 and FIG. 12 are schematic cross-sectional views along line II` of the film for semiconductor packaging in S640 of FIG. 6.

[0034] Figure 13 is a schematic drawing for explaining the transport process of a film for a semiconductor package.

[0035] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that in the following description, only the portions necessary for understanding the operation of the present invention will be described, and the description of other portions will be omitted so as not to obscure the gist of the present invention. Furthermore, the present invention is not limited to the embodiments described herein and may be embodied in other forms. However, the embodiments described herein are provided to explain the technical idea of ​​the present invention in sufficient detail to enable those of ordinary skill in the art to easily practice it.

[0036] Throughout the specification, when a part is said to be "connected" to another part, this includes not only the case where it is "directly connected" but also the case where it is "indirectly connected" with another element in between. The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the present invention. Throughout the specification, when a part is said to "comprise" a certain element, this does not exclude other elements unless specifically stated to the contrary, but rather means that it can include other elements. "At least one of X, Y, and Z", and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as one X, one Y, one Z, or any combination of two or more of X, Y, and Z (e.g., XYZ, XYY, YZ, ZZ). Herein, "and / or" includes any combination of one or more of the configurations.

[0037] Here, terms such as "first" and "second" may be used to describe various components, but these components are not limited to these terms. These terms are used to distinguish one component from another. Accordingly, a "first component" may refer to a "second component" within the scope disclosed herein.

[0038] Spatially relative terms, such as "below," "above," and the like, may be used for descriptive purposes to describe one element or feature in relation to other elements or features as depicted in the drawings. Spatially relative terms are intended to encompass different orientations during use, operation, and / or manufacturing, in addition to the orientation depicted in the drawings. For example, if a device depicted in the drawings is turned over, elements depicted as being positioned "below" other elements or features are now positioned "above" the other elements or features. Thus, in one embodiment, the term "below" may encompass both above and below. Furthermore, the device may be oriented in other orientations (e.g., rotated 90 degrees or in other directions), and the spatially relative terms used herein are to be interpreted accordingly.

[0039] Various embodiments are described with reference to drawings schematically illustrating ideal embodiments. Accordingly, it is to be understood that the shapes may vary, for example, depending on tolerances and / or manufacturing techniques. Therefore, the embodiments disclosed herein should not be construed as limited to the specific shapes depicted, but rather to encompass, for example, variations in shapes resulting from manufacturing processes. Likewise, the shapes depicted in the drawings may not depict the actual shapes of areas of the device, and the present embodiments are not limited thereto.

[0040] As used herein, "about" or "approximately" includes the stated value and means within an acceptable range of deviation (i.e., the limitations of the measurement system) for a particular value as determined by a person skilled in the art, taking into account the measurement and any associated errors. For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0041] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted to have a meaning consistent with their meaning within the context of the relevant technology and the invention, and should not be interpreted in an ideal or idealistic manner unless explicitly defined herein.

[0042] FIG. 1 is a schematic perspective view showing a film for a semiconductor package according to an embodiment of the present invention.

[0043] Referring to FIG. 1, a film (100) for a semiconductor package may include a base film (110), a circuit wiring (120) formed in a main area (111), a first support member (140), and a second support member (150).

[0044] The base film (110) may have a three-dimensional structure extending in a first direction (DR1), a second direction (DR2) intersecting the first direction (DR1), and a third direction (DR3) intersecting the first direction (DR1) and the second direction (DR2). For example, the base film (110) may have a shape such as a rectangular parallelepiped or a cube.

[0045] The base film (110) may be made of a synthetic resin material, such as polyimide (hereinafter referred to as "PI"). The thickness of the base film (110) may be formed in a range of about 25 to 50 μm, but is not limited thereto.

[0046] The base film (110) can be divided into a main area (111) to be used for mounting a semiconductor element and an edge area (112) adjacent to the main area (111) in a second direction (DR2).

[0047] Circuit wiring (120) may include input wiring (121), output wiring (122), and a window (123).

[0048] The window (123) may correspond to an area in which a semiconductor chip can be mounted. With the window (123) as the center, the input wiring (121) may extend to one side, and the output wiring (122) may extend to the other side. In embodiments, the number of output wirings (122) may be formed to be relatively greater than the number of input wirings (121). However, the embodiments are not limited thereto.

[0049] The circuit wiring (120) can be formed to a thickness of about 8 μm mainly using a conductor with high electrical conductivity, such as copper, but embodiments are not limited thereto. The circuit wiring (120) can be formed by performing processes such as etching and patterning on a copper layer (see 710 in FIG. 7) formed in the main area (111) of the base film (110).

[0050] The base film (110) may include sprocket holes (130). The sprocket holes (130) may be formed by performing penetration in the third direction (DR3) through the base film (110) using a punching machine or the like.

[0051] The sprocket holes (130) may be located in the edge region (112). The sprocket holes (130) may be spaced apart at regular intervals in the first direction (DR1). The sprocket holes (130) are illustrated as having a rectangular shape, but are not limited thereto. For example, they may have a circular shape.

[0052] The sprocket holes (130) can be used to transport the film (100) for semiconductor packaging using a pin roller (not shown). For example, the pins of the pin roller can pass through the sprocket holes (130) in a third direction (DR3). In addition, according to the rotational movement of the pin roller, the film (100) for semiconductor packaging can move (e.g., move linearly) in the first direction (DR1) and in a direction opposite to the first direction (DR1). This will be described in more detail with reference to FIG. 13.

[0053] The first support member (140) and the second support member (150) may be positioned in the edge region (112). They may be spaced apart in the second direction (DR2) by the width of the main region (111).

[0054] The first support member (140) and the second support member (150) may partially surround the sprocket holes (130). For example, each of the sprocket holes (130) may have a rectangular shape when viewed in a plan view, and in this case, among the four sides of the rectangular shape, the remaining three sides, excluding the side adjacent to the main area (111), may be surrounded by either the first support member (140) or the second support member (150).

[0055] The first support member (140) and the second support member (150) may have a thickness of about 8 μm in the third direction (DR3), but is not limited thereto. Various materials may be used to form the first support member (140) and the second support member (150). For example, the first support member (140) and the second support member (150) may be formed of copper.

[0056] The first support member (140) may include a first support member (141) and first protective walls (142). The first support member (141) may extend in a first direction (DR1), and the first protective walls (142) may extend in a second direction (DR2) while being coupled (or connected) to the first support member (141). The width of each of the sprocket holes (130) in the first direction (DR1) may be smaller than the width between adjacent first protective walls (142) in the first direction (DR1). The width of each of the sprocket holes (130) in the second direction (DR1) may be smaller than the width of one of the first protective walls (142) in the second direction (DR2). Accordingly, the sprocket holes (130) can be spaced apart from the first support member (140) at a certain interval.

[0057] Similarly, the second support member (140) may include a second support member (151) and second protective walls (152). The second support member (151) may extend in a first direction (DR1), and the second protective walls (152) may extend in an opposite direction to the second direction (DR2) while being coupled to the second support member (151). A width of each of the sprocket holes (130) in the first direction (DR1) may be smaller than a width between adjacent second protective walls (152) in the first direction (DR1). A width of each of the sprocket holes (130) in the second direction (DR1) may be smaller than a width of one of the first protective walls (152) in the second direction (DR2). Accordingly, the sprocket holes (130) can be spaced apart from the second support member (150) at a certain interval.

[0058] FIG. 2 is a schematic perspective view showing a film for a semiconductor package according to another embodiment of the present invention.

[0059] Referring to FIG. 2, a film (200) for a semiconductor package may include a base film (110), an adhesive layer (210), and a reinforcing film (220).

[0060] The base film (110) is configured similarly to the base film (110) of Fig. 1. Hereinafter, repeated descriptions are omitted.

[0061] An adhesive layer (210) adjacent to the base film (110) in a third direction (DR3) may be additionally attached. A reinforcing film (220) adjacent to the adhesive layer (210) in a third direction (DR3) may be further attached. The adhesive layer (210) and the reinforcing film (220) may be understood to have a three-dimensional structure extending in the first direction (DR1), the second direction (DR2), and the third direction (DR3).

[0062] Various materials can be used to form the adhesive layer (210). For example, the adhesive layer (210) may be formed using an acrylic or epoxy adhesive. The reinforcing film (220) may be formed using a synthetic resin material such as PET, LCP, PTFE, PP, PE, PA-66, or PC.

[0063] The adhesive layer (210) may have a thickness of about 5 to 15 μm, and the reinforcing film (220) may have a thickness of about 50 μm, but is not limited thereto. The thicker the reinforcing film (220), the more advantageous it may be for manufacturing since it prevents the film (200) for semiconductor packaging from bending during manufacturing.

[0064] Sprocket holes (230) can be formed by performing penetration in the third direction (DR3) through the base film (110), the adhesive layer (210), and the reinforcing film (220) using a punching machine, etc. In other words, the sprocket holes (230) can be formed not only in the base film (110), but also in the adhesive layer (210) and the reinforcing film (220).

[0065] FIG. 3 is a schematic perspective view showing a film for a semiconductor package according to another embodiment of the present invention. Except for the sprocket holes (310), the first support member (320), and the second support member (330), the film for a semiconductor package (300) is described similarly to the film for a semiconductor package (100) of FIG. 1. Hereinafter, a repeated description will be omitted.

[0066] Referring to FIG. 3, the first support member (320) may include a first support member (321) and first protective walls (322). The first support member (320) may extend in a first direction (DR1), and the first protective walls (322) may extend from the first support member (321) in a second direction (DR2).

[0067] In embodiments, the width of each of the sprocket holes (310) in the first direction (DR1) may be substantially equal to the width between the first protective walls (142) in the first direction (DR1). The width of each of the sprocket holes (310) in the second direction (DR2) may be equal to the length of one of the first protective walls (322) in the second direction (DR2). Accordingly, three sides of each of the sprocket holes (310) may be surrounded by the first support member (320) without the sprocket holes (310) being spaced apart from the first support member (320).

[0068] Similarly, the second support member (330) may include a second support member (331) and second protective walls (332). The second support member (331) may extend in a first direction (DR1), and the second protective walls (332) may extend from the second support member (331) in a second direction (DR2). A width of each of the sprocket holes (310) in the first direction (DR1) may be equal to a width between the second protective walls (332) in the first direction (DR1). A width of each of the sprocket holes (310) in the second direction (DR2) may be equal to a length of one of the second protective walls (332) in the second direction (DR2). Accordingly, three sides of each of the sprocket holes (310) can be surrounded by the first support member (330) without the sprocket holes (310) being spaced apart from the first support member (330).

[0069] Figure 4 is a schematic diagram showing an example of a shape that a semiconductor packaging film may be deformed into when force is applied during transport. Figure 4 shows the shape of the semiconductor packaging film according to the results of a computer simulation.

[0070] Referring to FIG. 4, six sprocket holes (SH1 to SH6) and edge areas (S1 to S6, N1) of the base film (400) are illustrated.

[0071] The edge regions (S1 to S6, N1) may include the first to sixth sprocket regions (S1 to S6) near the first to sixth sprocket holes (SH1 to SH6) and a region (NF1) to which force is not directly applied by the pin roller. Here, the first to sixth sprocket regions (S1 to S6) may correspond to regions to which force is directly applied by the pin roller when the base film (400) is conveyed.

[0072] The first to sixth sprocket regions (S1 to S6) may correspond to regions near the first to sixth sprocket holes (SH1 to SH6), respectively. For example, the first sprocket region (S1) may be located near the first sprocket hole (SH1). The second sprocket region (S2) may be located near the second sprocket hole (SH2).

[0073] In the area (NF1) where force is not directly applied by the pin roller, the shape of the base film (400) may not be deformed.

[0074] On the other hand, in the first to sixth sprocket regions (S1 to S6), a tensile force may be applied with the first to sixth sprocket holes (SH1 to SH6) as the center, respectively. For example, a tensile force may be applied in the first direction (DR1) and the second direction (DR2). And, due to this tensile force, the first to sixth sprocket regions (S1 to S6) can be seen to be greatly deformed in shape. For example, in the first sprocket region (S1), a recessed shape or even a partially stretched shape may be seen in the opposite direction (DR3) with the first sprocket hole (SH1) as the center.

[0075] Due to deformation of the first to sixth sprocket holes (SH1 to SH6), problems such as film cutting misses may occur in the module line process. Consequently, problems such as loss equivalent to the amount of base film discarded and a decrease in the manufacturing yield of films for semiconductor packages may occur.

[0076] To prevent this, the tensile strength of semiconductor packaging films around the sprocket holes is reinforced. However, the use of additional materials (e.g., attaching a new metal reinforcement layer) can exacerbate the decline in manufacturing yield. It is desirable to protect the sprocket holes without increasing additional material costs, thereby improving the productivity of the module line process.

[0077] Fig. 5 is a schematic perspective view showing the support of Fig. 1 and the corresponding protective walls. The support member (500) of Fig. 5 may be provided as at least one of the first support members (140, 320) and the second support members (150, 330) of Figs. 1 to 3.

[0078] Referring to FIG. 5, the support member (500) may include a support member (511) and first to fourth protective walls (512 to 515).

[0079] The support (511) extends in a first direction (DR1), and each of the first to fourth protective walls (512 to 515) may extend in a second direction (DR2) while being connected to the support (511). The shapes of the support (511) and the first to fourth protective walls (512 to 515) may have various shapes. They are not limited to the shapes illustrated in FIG. 5.

[0080] The first to fourth protective walls (512 to 515) may be spaced apart in the first direction (DR1). In addition, there may be an area between the protective walls where a sprocket hole is positioned. For example, there may be an area (521) between the first protective wall (512) and the second protective wall (513) where the first sprocket hole is positioned, and there may be an area (522) between the third protective wall (514) and the fourth protective wall (515) where the second sprocket hole is positioned.

[0081] When a film for a semiconductor package (100; see FIG. 1) is transported in a module line process, a pin roller may be positioned below a support member (500) in a third direction (DR3). And the pins of the pin roller may penetrate areas (521, 522) where the first and second sprocket holes are to be positioned in the third direction (DR3). Thereafter, the pin roller may rotate about a rotational axis extending in the second direction (DR2). Depending on the rotation, the film for a semiconductor package (100; see FIG. 1) may be moved in the first direction (DR1) or in a direction opposite to the first direction (DR1). At this time, the support member (500) may reinforce the strength of areas (521, 522) where the first and second sprocket holes are to be positioned. Accordingly, deformation of the sprocket holes located in the areas (521, 522) where the first and second sprocket holes are located can be prevented.

[0082] FIG. 6 is a flowchart showing an example of a method for manufacturing a film for a semiconductor package of FIG. 1.

[0083] Referring to FIG. 1 and FIG. 6, in S610, a multilayer structure composed of a base film (110) and a copper layer can be formed.

[0084] In S620, sprocket holes (131 to 134; see Fig. 8) can be formed by penetrating the base film (110; see Fig. 8) and the copper layer (710; see Fig. 8) in the edge region (112). The material constituting the copper layer (710) is not limited to copper, and various other materials can be used.

[0085] In S630, a photoresist layer (910; see Fig. 9) is formed on top of a copper layer (710; see Fig. 9). Thereafter, a laser beam is irradiated to simultaneously perform patterning and exposure, and a photoresist pattern (911 to 918; see Fig. 10) can be formed through development.

[0086] In S640, protective walls (711-718; see FIG. 12), supports (not shown), and circuit wiring (not shown) can be formed by wet etching a copper layer (710) using a photoresist pattern (911-918; see FIG. 11) as a mask. Thereafter, the photoresist pattern can be removed.

[0087] As the copper layer (710) is etched, a first support member (140) and a second support member (150) can be formed in the edge region (110). The first and second support members (140, 150) can be arranged around the sprocket holes (130). During the manufacturing process, the first and second support members (140, 150) can protect the sprocket holes (130) and / or the film for the semiconductor package (100) from external stress (e.g., tensile force).

[0088] Fig. 7 is a schematic cross-sectional view along line II` of the film for semiconductor packaging in S610 of Fig. 6.

[0089] Referring to FIG. 1 and FIG. 7, a copper layer (710) can be formed on a base film (110) so as to be in contact with the third direction (DR3).

[0090] The base film (110) and the copper layer (710) may have a three-dimensional shape extending in the first direction (DR1), the second direction (DR2), and the third direction (DR3). The base film (110) may be made of a synthetic resin material such as polyimide resin, acrylic resin, polyether-nitrile resin, polyether-sulfone resin, polyethylene terephthalate resin, polyethylene naphthalate resin, or polyvinyl chloride resin.

[0091] The thickness of the base film (110) can be formed in the range of 25 to 50 um, and the thickness of the copper layer (710) can be about 8 um. However, the embodiments are not limited thereto.

[0092] It has a multilayer structure including a base film (110) and a copper layer (710), but may have a multilayer structure formed by bonding copper foil (or foil) to the base film (110) with an adhesive layer (not shown) in between.

[0093] In embodiments, an adhesive layer (210; see FIG. 2) may be attached to the lower surface of the base film (110) so as to be adjacent in the third direction (DR3), and a reinforcing film (220) may be attached to the lower surface of the adhesive layer (210) so as to be adjacent in the third direction (DR3).

[0094] Fig. 8 is a schematic cross-sectional view along line II` of the film for semiconductor packaging in S620 of Fig. 6.

[0095] Referring to FIG. 1 and FIG. 8, sprocket holes (131 to 134) can be formed by performing penetration in the third direction (DR3) through the base film (110) and the copper layer (710) using various methods (e.g., a punching machine, etc.).

[0096] The sprocket holes (131 to 134) can be arranged at regular intervals in the first direction (DR1).

[0097] When a film (100) for a semiconductor package is transported in a module line process, the pin roller may be positioned in a direction opposite to the third direction (DR3) of the base film (110). And the pins of the pin roller may each penetrate the sprocket holes (131 to 134) in the third direction (DR3). Thereafter, the base film (110) may be moved in the first direction (DR1) to the opposite direction of the first direction (DR1) based on rotation based on the rotation axis extending in the second direction (DR2) of the pin roller.

[0098] FIGS. 9 and 10 are schematic cross-sectional views along line II` of the film for semiconductor packaging in S630 of FIG. 6.

[0099] Referring to FIGS. 1 and 9, a photoresist layer (910) can be laminated so as to be in contact with a copper layer (710) in a third direction (DR3). The photoresist layer (910) can have a three-dimensional shape extending in the first direction (DR1), the second direction (DR2), and the third direction (DR3). The photoresist layer (910) can be 4 μm thick, but is not limited thereto.

[0100] Referring to FIGS. 1 and 10, a laser beam is irradiated onto a photoresist layer (910; see FIG. 9) to simultaneously perform patterning and exposure. Thereafter, a photoresist pattern (911 to 918) can be formed through a development process. Various materials (e.g., sodium carbonate (Na2CO3)) can be used as the developing solution. The first support member (140) and the second support member (150) will be formed on portions of the copper layer (710) that overlap the photoresist pattern (911 to 918).

[0101] FIG. 11 and FIG. 12 are schematic cross-sectional views along line II` of the film for semiconductor packaging in S640 of FIG. 6.

[0102] Referring to FIGS. 1 and 11, the copper layer (710) can be removed. In one embodiment, the copper layer (710) can be wet-etched using the photoresist patterns (911 to 918) as a mask. Through the wet etching, portions of the copper layer (710) that do not overlap the photoresist patterns (911 to 918) can be removed. Accordingly, the first and second support members (140, 150) and circuit wirings can be formed. Among them, the protective walls (711 to 718) are illustrated in FIG. 11.

[0103] In one embodiment, the etchant may be an etchant that primarily etches the Cu component, which is a metal. For example, an etchant mainly composed of ferric chloride, an etchant mainly composed of cupric chloride, a mixture of sulfuric acid and hydrogen peroxide, etc. may be used.

[0104] Referring to FIGS. 1 and 12, the photoresist pattern (911 to 918, see FIG. 10) can be removed. Additionally, tin plating can be performed on the protective walls (711 to 718) and the supporting member (not shown). The tin plate layer created through the tin plating can surround the first and second supporting members (140, 150), including the protective walls (711 to 718), and the circuit wiring.

[0105] According to an embodiment of the present invention, the first and second support members (140, 150) can be formed by etching the copper layer (710) without the need for using additional materials, thereby protecting the sprocket holes (131 to 134) and also maintaining the yield of the film (100) for semiconductor packaging.

[0106] Figure 13 is a schematic drawing for explaining the transport process of a film for a semiconductor package.

[0107] Referring to FIG. 13, a film (100) and a pin roller (1310) for a semiconductor package are illustrated.

[0108] The pin roller (1310) may include pins. For convenience of explanation, first to fourth pins (1311 to 1314) are illustrated in FIG. 13.

[0109] The first to fourth pins (1311 to 1314) can penetrate the sprocket holes. For example, the first plate (1311) can penetrate the first sprocket hole (131), the second pin (1312) can penetrate the second sprocket hole (132), the third pin (1313) can penetrate the third sprocket hole (133), and the fourth pin (1314) can penetrate the fourth sprocket hole (134).

[0110] Thereafter, the pin roller (1310) can rotate in the first direction (DR1) or in the opposite direction to the first direction (DR1) based on the rotation axis extending in the second direction (DR2). Accordingly, the semiconductor package film (100) engaged with the first to fourth pins (1311 to 1314) through the first to fourth sprocket holes (131 to 134) can move. For example, the semiconductor package film (100) can move linearly in the first direction (DR1) or in the opposite direction to the first direction (DR1). During the movement of the semiconductor package film (100), a tensile force may be applied near the first to fourth sprocket holes (131 to 134).

[0111] If the first to eighth protective walls (711 to 718) and the support do not exist in the film (100) for semiconductor packaging, the shape of the first to fourth sprocket holes (131 to 134) may be deformed due to tensile force.

[0112] On the other hand, according to an embodiment of the present invention, since the first to eighth protective walls (711 to 718) and the support are present in the film for semiconductor packaging (100; see FIG. 1), the strength of the first to fourth sprocket holes (131 to 134) and the adjacent portions thereof can be reinforced. For example, since the first protective wall (711), the second protective wall (712), and the support are present, the strength near the first sprocket hole (131) can be reinforced. Due to the reinforced strength in this way, the shape of the first to fourth sprocket holes (131 to 134) can be prevented from being deformed.

[0113] The above description exemplifies the technical features of the present invention. Those skilled in the art will appreciate that various modifications and variations are possible. Therefore, the embodiments of the present invention described above may be implemented individually or in combination with one another.

[0114] The embodiments of the present invention are not intended to limit the technical concept of the present invention, but rather to illustrate the technical concept of the present invention. The scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be construed as being included within the scope of the present invention.

Claims

1. A base film having sprocket holes arranged in a first direction in an edge region around a main region, wherein the edge region is adjacent to the main region in a second direction intersecting the first direction; Circuit wiring arranged in the above main area; and A support member is disposed on the base film and is adjacent to the sprocket holes in the edge region, The above support member is, a support extending in the first direction; and A film for a semiconductor package comprising protective walls connected to the support and spaced apart from each other with the sprocket holes therebetween.

2. In paragraph 1, A film for a semiconductor package, wherein the protective walls are arranged in the first direction, and each of the protective walls extends from the support in a second direction intersecting the first direction.

3. In paragraph 2, The above sprocket holes are a film for a semiconductor package arranged between the support and the main area.

4. In paragraph 1, A film for a semiconductor package, wherein each of the above sprocket holes is partially surrounded by two of the above protective walls and a portion of the support.

5. In paragraph 1, A film for a semiconductor package, wherein a width in the first direction between adjacent protective walls among the above protective walls is greater than a width in the first direction of one of the sprocket holes.

6. In paragraph 1, Further comprising a reinforcing film attached to the lower surface of the base film, A film for a semiconductor package, characterized in that the sprocket holes penetrate the base film and the reinforcing film.

7. In paragraph 6, The above reinforcing film is a film for a semiconductor package containing a synthetic resin material.

8. In paragraph 1, The above support and the above protective wall are films for semiconductor packages containing copper.

9. A film for a semiconductor package having first and second edge regions, and a main region disposed between the first and second edge regions: A base film having first sprocket holes arranged in a first direction in the first edge region, and second sprocket holes arranged in the first direction in the second edge region, wherein the first and second edge regions are spaced apart from each other in a second direction intersecting the first direction; a first support member disposed on the base film and adjacent to the first sprocket holes in the first edge region; and A second support member is disposed on the base film and adjacent to the second sprocket holes in the second edge region, The first support member comprises a first support member extending in the first direction, and first protective walls connected to the first support member and spaced apart from each other with the first sprocket holes interposed therebetween. A film for a semiconductor package, wherein the second support member comprises a second support member extending in the first direction, and second protective walls connected to the second support member and spaced apart from each other with the second sprocket holes therebetween.

10. In paragraph 1, A film for a semiconductor package, wherein a width in the first direction between adjacent protective walls among the above protective walls is substantially the same as a width in the first direction of one of the sprocket holes.

11. A step of forming a multilayer structure including a base film and a copper layer, wherein the multilayer structure includes a main region and an edge region adjacent to the main region in a first direction; A step of forming sprocket holes arranged in a second direction intersecting the first direction in the edge area; A step of forming a photoresist pattern on the above copper layer; A step of forming a support member by removing at least a portion of the copper layer using the photoresist pattern, The above support member is, a support extending in the second direction; and A method for manufacturing a film for a semiconductor package, the film including protective walls connected to the support and spaced apart from each other with the sprocket holes interposed therebetween.

12. In paragraph 11, A manufacturing method wherein the above protective walls are arranged in the second direction, and each of the above protective walls extends from the support in the first direction.

13. In paragraph 12, A manufacturing method wherein the above sprocket holes are arranged between the support and the main area.

14. In paragraph 11, A manufacturing method wherein each of the above sprocket holes is partially surrounded by two of the above protective walls and a portion of the support.

15. In paragraph 11, A manufacturing method wherein the width between adjacent protective walls among the above protective walls in the second direction is greater than the width of one of the sprocket holes in the second direction.

16. In paragraph 11, Further comprising a step of attaching a reinforcing film to the lower surface of the base film, A manufacturing method in which the above sprocket holes penetrate the base film and the reinforcing film.

17. In paragraph 16, A manufacturing method wherein the above reinforcing film includes a synthetic resin material.

18. In paragraph 11, A manufacturing method wherein the above-mentioned support and the above-mentioned protective walls comprise copper.

19. In paragraph 11, A manufacturing method wherein the step of forming the support member includes a step of wet etching the copper layer using the photoresist pattern as a mask.

20. In paragraph 12, A manufacturing method in which the above-mentioned support member protects the above-mentioned sprocket holes and the above-mentioned semiconductor package film from external stress.

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