Detection device and method for manufacturing detection device

Abstract

Provided is a detection device wherein ventilation can be improved and stuffiness due to sweat can be suppressed. This detection device comprises: a first substrate; a plurality of organic photodiodes that are on the first substrate and have lower electrodes, lower buffer layers, active layers, upper buffer layers, and upper electrodes; a detection region in which the organic photodiodes are positioned; a sealing film that covers the detection region; and a plurality of first openings that are provided penetrating at least from the sealing film to the first substrate.

Description

Detection device and method for manufacturing the same

[0001] The present invention relates to a detection device and a method for manufacturing a detection device.

[0002] 2. Description of the Related Art An input display device (detection device) that can be worn adjacent to the skin in a fixed position for an extended period of time is known (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2009-32005

[0004] Such input display devices (detection devices) that can be worn adjacent to the skin for extended periods of time are worn on the skin for extended periods of time, and therefore there is a possibility that the areas adjacent to the skin may become stuffy due to sweat.

[0005] An object of the present invention is to provide a detection device that can improve breathability and prevent stuffiness due to sweat, and a method for manufacturing the detection device.

[0006] A detection device according to one embodiment of the present invention includes a first substrate, a plurality of organic photodiodes on the first substrate, each having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode, a detection region in which the organic photodiodes are arranged, a sealing film covering the detection region, and a plurality of first openings extending from at least the sealing film to the first substrate.

[0007] A method for manufacturing a detection device according to one embodiment of the present invention includes a first step of stacking a circuit formation layer, an organic photodiode, and a sealing film covering the organic photodiode on a first substrate in that order in a direction perpendicular to the first substrate; a second step of forming a first opening from the sealing film to the first substrate in a direction perpendicular to the first substrate after the first step; a third step of stacking a second substrate on the sealing film after the second step; and a fourth step of heating the second substrate after the third step.

[0008] FIG. 1A is a schematic diagram illustrating an example of the appearance of the detection device according to embodiment 1 when a finger is placed inside the detection device, as viewed from the side of the housing. FIG. 1B is a schematic diagram illustrating an example of the appearance of the detection device according to embodiment 1 when a human body is placed inside the detection device, as viewed from the side of the housing. FIG. 1C is a schematic diagram illustrating an example of the appearance of the detection device according to embodiment 1 when worn on a human body, as viewed from the side of the housing. FIG. 2 is a schematic cross-sectional view taken along the line II-II' in FIG. 1A. FIG. 3 is a plan view schematically illustrating the detection device according to the first embodiment. FIG. 4 is a block diagram illustrating an example of the configuration of the detection device according to the first embodiment. FIG. 5 is a circuit diagram illustrating the detection device according to the first embodiment. FIG. 6 is a plan view schematically illustrating a plurality of pixels and a first opening. FIG. 7 is a cross-sectional view taken along the line VII-VII' in FIG. 6. FIG. 8 is an enlarged schematic configuration diagram of a sensor unit. FIG. 9 is a cross-sectional view taken along the line IX-IX' in FIG. 8. FIG. 10 is a cross-sectional view taken along the line X-X' in FIG. 8. FIG. 11 is a schematic cross-sectional view of a detection device according to Modification 1 of the first embodiment. FIG. 12 is a schematic cross-sectional view of a detection device according to Modification 2 of the first embodiment. FIG. 13 is a schematic cross-sectional view of a detection device according to Modification 3 of the first embodiment. FIG. 14 is a plan view schematically showing a plurality of pixels and a first opening of a detection device according to a second embodiment. FIG. 15 is an enlarged schematic configuration diagram of a sensor unit according to the second embodiment. FIG. 16 is a plan view schematically showing a plurality of pixels and a first opening of a detection device according to a third embodiment. FIG. 17 is an enlarged plan view schematically showing the periphery of the first opening in FIG. 16. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII′ of FIG. 16. FIG. 19 is a schematic cross-sectional view of a detection device according to Modification 1 of the third embodiment. FIG. 20 is a schematic cross-sectional view of a detection device according to Modification 2 of the third embodiment. FIG. 21 is a schematic cross-sectional view of a detection device according to Modification 3 of the third embodiment. Fig. 22 is a plan view schematically showing a plurality of pixels, a first opening, and a second opening of a detection device according to a fourth embodiment. Fig. 23 is a cross-sectional view taken along line XXIII-XXIII' in Fig. 22. Fig. 24 is an explanatory view for explaining a manufacturing method according to a fifth embodiment.

[0009] Modes for carrying out the invention (embodiments) will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. The disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, for clarity of explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] In this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0011] 1A is a schematic diagram showing an example of the appearance of a detection device according to embodiment 1 when a finger is placed inside the detection device as viewed from the side of the housing. Fig. 2 is a schematic cross-sectional view taken along line II-II' in Fig. 1A.

[0012] The detection device 1 shown in FIG. 1A is a ring-shaped device that can be attached to and detached from the human body, and is worn on a finger Fg of the human body. The finger Fg includes the thumb, index finger, middle finger, ring finger, little finger, etc. The human body is an individual to be authenticated, whose identity is verified by the detection device 1. The detection device 1 can detect biometric information about a living body from the finger Fg on which it is worn. The finger Fg is an example of a measurement target. The measurement target is a living body or part of a living body, and is a measurement target. The detection device 1 is made into a ring or wristband, making it easy for the user to carry. In the following description, it is assumed that the detection device 1 is used as a ring.

[0013] As shown in Fig. 2, the detection device 1 includes a housing 200, light sources 53 and 54, and an organic photodiode PD (organic photosensor). The detection device 1 is equipped with a battery (not shown) inside the housing 200 and is a device that operates on battery power. In Fig. 2, components other than the housing 200, the organic photodiode PD, and the light sources 53 and 54 (for example, various boards such as the first board 21 (see Fig. 3)) are omitted.

[0014] The housing 200 is formed in a ring shape (annular shape) that can be worn on a finger Fg, and is a wearable member that is worn on a living body. In the example shown in FIG. 2 , the housing 200 includes a sealing film 210 and an exterior part 220. The sealing film 210 and the exterior part 220 are integrally formed into a ring shape in the housing 200. The sealing film 210 houses the light sources 53, 54, the organic photodiode PD, etc. inside. The sealing film 210 is formed in a ring shape from a housing material such as a transparent synthetic resin or silicone. The exterior part 220 has a surface of the housing 200 that covers the sealing film 210. The exterior part 220 is formed in a ring shape from a material such as a metal or a non-transparent synthetic resin. The exterior part 220 has an air vent 221.

[0015] 1B is a schematic diagram showing an example of the appearance of a human body placed inside the detection device 1a according to embodiment 1, as viewed from the side of the housing. The detection device 1a shown in FIG. 1B is a ring-shaped device that can be attached to and detached from the human body HB, and is worn on the arm of the human body HB. The detection device 1 shown in FIG. 1B is, for example, a smart watch, a wristwatch, a wristband, or the like. The human body HB is the body of the person to be authenticated, whose identity is verified by the detection device 1, and includes the wrist, arm, leg, or the like. The detection device 1 can detect biometric information related to the living body from the attached human body HB.

[0016] 1C is a schematic diagram showing an example of the appearance of the detection device 1b according to embodiment 1 when worn on a human body, as viewed from the side of the housing. The detection device 1b shown in FIG. 1C is a bandage-type device that can be attached and detached to the human body HB, and can be attached to the surface of the human body HB by being attached to the surface of the human body HB or placed on the surface of the human body HB. The detection device 1b can detect biological information related to the living body from the worn human body HB.

[0017] In FIG. 2, each of the plurality of first openings OP is provided so as to penetrate the sealing film 210, the organic photodiode PD, and the first substrate 21 (see FIG. 3) in the normal direction.

[0018] The ventilation opening 221 is provided to penetrate in the normal direction in order to discharge sweat generated from the finger Fg to the outside. The sweat is discharged to the outside from the ventilation opening 221 via any of the plurality of first openings OP.

[0019] The organic photodiodes PD detect biological information related to the living body from a detection object such as a finger Fg. Specifically, light emitted from the light sources 53 and 54 and transmitted through or reflected by a detection object such as a finger Fg is irradiated onto the organic photodiodes PD.

[0020] The organic photodiodes PD detect light emitted by the light sources 53 and 54 and reflected by the finger Fg or the like, as well as directly incident light.

[0021] The light sources 53 and 54 are provided inside the sealing film 210 of the housing 200 at positions that do not overlap with the plurality of organic photodiodes PD, and are configured to be able to irradiate light toward a detection object such as a finger Fg worn on the ring-shaped housing 200. Note that the positions of the light sources 53 and 54 shown in Fig. 2 are merely an example and can be changed as appropriate. In other words, the light sources 53 and 54 may be arranged in any position as long as the light emitted from the light sources 53 and 54 and transmitted through or reflected by a detection object such as a finger Fg is appropriately irradiated onto the organic photodiodes PD.

[0022] Fig. 3 is a plan view schematically showing the detection device according to the first embodiment. As shown in Fig. 3, the detection device 1 includes a first substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. The first light source substrate 51 is provided with a plurality of light sources 53. The second light source substrate 52 is provided with a plurality of light sources 54.

[0023] The control board 121 is electrically connected to the first substrate 21 via a wiring board 71. The wiring board 71 is, for example, a flexible printed circuit board or a rigid board. The detection circuit 48 is provided on the wiring board 71. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 5), to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. Furthermore, the power supply circuit 123 supplies a power supply voltage to the light sources 53 and 54 .

[0024] The first substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where a plurality of organic photodiodes PD (see FIG. 9 ) of the sensor unit 10 are arranged. The peripheral area GA is an area between the periphery of the detection area AA and the outer edge of the first substrate 21, and is an area where the plurality of organic photodiodes PD are not provided.

[0025] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0026] In the following description, the first direction Dx is a direction in a plane parallel to the first substrate 21. The second direction Dy is a direction in a plane parallel to the first substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular to it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction to the main surface of the first substrate 21. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the first substrate 21.

[0027] The plurality of light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0028] The light sources 53, 54 may be, for example, inorganic light-emitting diodes (LEDs) or organic light-emitting diodes (OLEDs). The light sources 53, 54 each emit light of a different predetermined wavelength. The light sources 53, 54 each have a plurality of light sources so as to be able to emit near-infrared light, red light, and green light.

[0029] The first light emitted from the light source 53 is reflected by the surface of the object to be detected, such as a finger Fg, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger Fg. The second light emitted from the light source 54 is reflected by the inside of the finger Fg or passes through the finger and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger Fg. Examples of information about the living body include the pulse wave, pulse rate, and blood vessel image of the finger or palm. That is, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0030] The arrangement of the light sources 53, 54 shown in Figure 3 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources 53, 54 as light sources. However, this is not limited to this, and the light source may be of one type. For example, multiple light sources 53 and multiple light sources 54 may be arranged on the first light source substrate 51 and the second light source substrate 52, respectively. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0031] Fig. 4 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. As shown in Fig. 4, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. Some or all of the functions of the detection control circuit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0032] The sensor unit 10 has a plurality of organic photodiodes PD. The organic photodiodes PD of the sensor unit 10 output electrical signals corresponding to the incident light as detection signals Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with gate drive signals VGL supplied from the gate line drive circuit 15.

[0033] The detection control circuit 11 supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, to control their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the gate line drive circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control circuit 11 also supplies various control signals to the light sources 53 and 54 to control their lighting and non-lighting.

[0034] The gate line driving circuit 15 drives a plurality of gate lines GL (see FIG. 5 ) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GL and supplies a gate driving signal VGL to the selected gate lines GL. In this way, the gate line driving circuit 15 selects a plurality of organic photodiodes PD connected to the gate lines GL.

[0035] The signal line selection circuit 16 has a switch circuit that sequentially or simultaneously selects multiple signal lines SL (see FIG. 5 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the organic photodiode PD to the detection unit 40.

[0036] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 based on a control signal supplied from the detection control circuit 11 so that they operate in synchronization with each other.

[0037] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit that has at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0038] The signal processing circuit 44 detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. The signal processing circuit 44 is a logic circuit. When a finger comes into contact with or close to the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing circuit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0039] The memory circuit 46 temporarily stores the signals calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0040] When the signal processing circuit 44 detects contact or proximity of a finger, the coordinate extraction circuit 45 determines the detected coordinates of the unevenness of the surface of the finger or the like. The coordinate extraction circuit 45 also determines the detected coordinates of the blood vessels of the finger or palm. The coordinate extraction circuit 45 is a logic circuit. The coordinate extraction circuit 45 combines the detection signals Vdet output from each organic photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or the palm. Note that the coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates.

[0041] Fig. 5 is a circuit diagram showing the detection device according to the first embodiment. Fig. 5 also shows the circuit configuration of a detection circuit 48. As shown in Fig. 5, a sensor pixel PX includes an organic photodiode PD, a capacitance element Ca, and a drive transistor Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the organic photodiode PD, and is equivalently connected in parallel with the organic photodiode PD.

[0042] 5 shows two gate lines GL(m) and GL(m+1) arranged in the second direction Dy among the multiple gate lines GL. Also, two signal lines SL(n) and SL(n+1) arranged in the first direction Dx among the multiple signal lines SL. A sensor pixel PX is an area surrounded by the gate line GL and the signal line SL.

[0043] The drive transistors Tr are provided corresponding to the plurality of organic photodiodes PD, respectively. The drive transistors Tr are configured by thin film transistors, and in this example, are configured by n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0044] Each of the gate lines GL is connected to the gates of a plurality of drive transistors Tr arranged in a first direction Dx. Each of the signal lines SL is connected to one of the source and drain of a plurality of drive transistors Tr arranged in a second direction Dy. The other of the source and drain of each of the drive transistors Tr is connected to the anode of the organic photodiode PD and the capacitance element Ca.

[0045] A sensor power supply signal VDDSNS is supplied to the cathode of the organic photodiode PD from a power supply circuit 123 (see FIG. 3 ). A sensor reference voltage COM, which serves as the initial potential of the signal line SL and the capacitance element Ca, is supplied to the signal line SL and the capacitance element Ca from the power supply circuit 123 via a reset transistor TrR.

[0046] When light is irradiated onto the sensor pixel PX during the exposure period, a current corresponding to the amount of light flows through the organic photodiode PD, causing charge to accumulate in the capacitance element Ca. When the drive transistor Tr is turned on during the readout period, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SL. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the organic photodiode PD for each sensor pixel PX.

[0047] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SL. The detection signal amplifier circuit 42 of the detection circuit 48 converts the current or charge supplied from the signal line SL into a voltage corresponding to the current or charge. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier circuit 42, and the signal line SL is connected to the inverting input terminal (-). In this embodiment, a signal equal to the sensor reference voltage COM is input as the reference potential (Vref) voltage. The control circuit 122 (see FIG. 3) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier circuit 42 also has a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, resetting the charge in the capacitance element Cb.

[0048] The driving transistor Tr is not limited to an n-type TFT, but may be a p-type TFT. The pixel circuit of the sensor pixel PX shown in Fig. 3 is merely an example, and the sensor pixel PX may be provided with multiple transistors corresponding to one organic photodiode PD.

[0049] FIG. 6 is a plan view schematically illustrating a plurality of pixels and a first opening. As shown in FIG. 6, the plurality of sensor pixels PX are arranged in a matrix in the detection area AA of the first substrate 21, and each has an organic photodiode PD. In FIG. 6, the sensor pixels PX are arranged in four rows and six columns. However, FIG. 6 shows a simplified arrangement of the sensor pixels PX for ease of understanding. The detection device 1 may have a large number of sensor pixels PX in five rows and seven columns or more, depending on the type of object to be detected and the detection resolution.

[0050] The plurality of gate lines GL extend in a first direction Dx and are arranged at intervals in a second direction Dy. The plurality of signal lines SL extend in the second direction Dy and are arranged at intervals in the first direction Dx. The plurality of sensor pixels PX (plurality of organic photodiodes PD) are provided in an area surrounded by adjacent gate lines GL and adjacent signal lines SL.

[0051] The sealing film 210 is provided to cover a detection area AA having a plurality of sensor pixels PX (a plurality of organic photodiodes PD). The detection device 1 has a plurality of first openings OP in the detection area AA. The plurality of first openings OP are provided in areas overlapping with the respective sensor pixels PX and are arranged in a matrix in the detection area AA. In other words, each of the plurality of first openings OP is provided in an area surrounded by two gate lines GL and two signal lines SL.

[0052] The plurality of first openings OP are circular in plan view. The areas (diameters) of the plurality of first openings OP are substantially equal to each other. In this embodiment, the areas (diameters) of the first openings OP are all equal to each other, but some of the areas (diameters) may be different.

[0053] Fig. 7 is a cross-sectional view taken along the line VII-VII' in Fig. 6. Note that Fig. 7 shows the configuration of each layer in a simplified manner for ease of understanding. The detailed layered configuration of the organic photodiode PD will be described later with reference to Fig. 9. Furthermore, the detailed layered configuration of the circuit formation layer 29 will be described later with reference to Fig. 10.

[0054] In the following description, the direction from the first substrate 21 toward the sealing film 210 in the direction perpendicular to the surface of the first substrate 21 will be referred to as the "upper side" or simply "upper." The direction from the sealing film 210 toward the first substrate 21 will be referred to as the "lower side" or simply "lower."

[0055] 7, the detection device 1 includes a circuit formation layer 29, an organic photodiode PD, and a sealing film 210 stacked in this order on a first substrate 21. The circuit formation layer 29 is provided on the first substrate 21, and is a layer on which various transistors such as the drive transistor Tr shown in FIG. 5 and various wirings such as the gate line GL and the signal line SL are formed.

[0056] The organic photodiode PD is provided on the circuit formation layer 29. The organic photodiode PD is provided continuously across the detection area AA and the peripheral area GA. Note that the organic photodiode PD provided in the peripheral area GA is configured not to function as an optical sensor.

[0057] The sealing film 210 is provided on the organic photodiode PD. A plurality of first openings OP are provided penetrating from the sealing film 210 to the first substrate 21 in the third direction Dz. In this embodiment, the plurality of first openings OP are provided in an area overlapping with the detection area AA, but are not provided in an area overlapping with the peripheral area GA.

[0058] The side walls of the plurality of first openings OP are covered with a resin film 55. The resin film 55 is formed of, for example, a film-like synthetic resin such as PET (Poly Ethylene Terephthalate). The resin film 55 has a shape that matches the shape of the side walls of the first openings OP, and the shape is not particularly limited, and may be curved or rectangular. This allows the organic photodiodes PD, the circuit formation layer 29, and the first substrate 21 to be sealed.

[0059] Next, the detailed configuration of the organic photodiode PD will be described. Fig. 8 is an enlarged schematic configuration diagram of the sensor portion. In Fig. 8, a plurality of first openings OP are indicated by two-dot chain lines to make the drawing easier to see.

[0060] 8, the detection device 1 has a plurality of organic photodiodes PD provided on a first substrate 21. The right and bottom sides of the lower electrode 23 are provided so as to overlap with a portion of the signal line SL and the gate line GL, respectively. The left and top sides of the lower electrode 23 are provided so as not to overlap with the signal line SL and the gate line GL, respectively.

[0061] The plurality of first openings OP are provided in regions where the lower electrodes 23 are not arranged in plan view, so that the lower electrodes 23 are not exposed to the first openings OP, ensuring reliability.

[0062] The driving transistor Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 extends along the gate line GL and is provided so as to intersect with the gate electrode 64 in a plan view. The gate electrode 64 is connected to the gate line GL and extends in a direction (second direction Dy) perpendicular to the gate line GL.

[0063] One end of the semiconductor layer 61 is connected to a source electrode 62 via a contact hole CH2. The source electrode 62 is connected to a connection pad 66 and is drawn out to the center of the lower electrode 23. The lower electrode 23 is connected to the connection pad 66 at its center via a contact hole CH1. With this configuration, the source electrode 62 of the drive transistor Tr is electrically connected to the organic photodiode PD. The other end of the semiconductor layer 61 is connected to a drain electrode 63 via a contact hole CH3. The drain electrode 63 is connected to a signal line SL.

[0064] The shape, arrangement pitch, etc. of the lower electrodes 23 shown in FIG. 8 are merely examples, and can be changed as appropriate depending on the characteristics and detection accuracy required of the detection device 1.

[0065] FIG. 9 is a cross-sectional view taken along line IX-IX' in FIG. 8. FIG. 10 is a cross-sectional view taken along line X-X' in FIG. 8. As shown in FIG. 9, the detection device 1 includes a circuit formation layer 29, an insulating film 27, an organic photodiode PD, and a sealing film 210 stacked in this order on a first substrate 21. The first substrate 21 is an insulating substrate, and may be, for example, a glass substrate made of quartz, alkali-free glass, or the like. The first substrate 21 is not limited to a flat plate shape and may have a curved surface. In this case, the first substrate 21 is formed in a strip shape using, for example, a film-like synthetic resin such as PET (Poly Ethylene Terephthalate).

[0066] The circuit formation layer 29 is provided on the first substrate 21. The insulating film 27 is provided on the circuit formation layer 29 including the drive transistor Tr, covering the signal line SL. The insulating film 27 is an organic planarization film made of an organic insulating material.

[0067] As shown in FIG. 9, the circuit formation layer 29 has an undercoat film 91, a gate insulating film 92, and an interlayer insulating film 93 as insulating films.

[0068] The undercoat film 91 has, for example, a two-layer laminated structure having insulating films 91a and 91b. The undercoat film 91 is formed of, for example, an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The configuration of the undercoat film 91 is not limited to that shown in FIG. 12. For example, the undercoat film 91 may be a single-layer film or a laminated film of three or more layers.

[0069] The light-shielding film 67 is provided on the insulating film 91a. The light-shielding film 67 is provided between the semiconductor layer 61 and the first substrate 21. The light-shielding film 67 can prevent light from entering the channel region of the semiconductor layer 61 from the first substrate 21 side.

[0070] The drive transistor Tr is provided on the first substrate 21. The semiconductor layer 61 is provided on an undercoat film 91. The gate insulating film 92 is provided on the undercoat film 91, covering the semiconductor layer 61. The gate insulating film 92 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 92.

[0071] In this embodiment, the driving transistor Tr has a top gate structure. However, the driving transistor Tr is not limited to this, and may have a bottom gate structure or a dual gate structure in which gate electrodes 64 are provided on both the upper and lower sides of the semiconductor layer 61.

[0072] The interlayer insulating film 93 is provided on the gate insulating film 92, covering the gate electrode 64. The interlayer insulating film 93 has, for example, a stacked structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a contact hole CH2 provided in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a contact hole CH3 provided in the gate insulating film 92 and the interlayer insulating film 93.

[0073] Furthermore, the contact hole CH1 is provided in the lower electrode 23 so as to penetrate the insulating film 27 in the thickness direction (third direction Dz). The lower electrode 23 is connected to the connection pad 66 at the bottom of the contact hole CH1.

[0074] The insulating film 27 covers the source electrode 62 and the drain electrode 63 of the driving transistor Tr and is provided on the interlayer insulating film 93. In this embodiment, the contact hole CH1 in the insulating film 27 is provided in a region overlapping with the source electrode 62.

[0075] The organic photodiode PD is provided on the insulating film 27. The organic photodiode PD has a lower electrode 23, a lower buffer layer 32, an active layer 31, an upper buffer layer 33, and an upper electrode 24. The organic photodiode PD is formed by stacking the lower electrode 23, the lower buffer layer 32, the active layer 31, the upper buffer layer 33, and the upper electrode 24 in this order. The organic photodiode PD of this embodiment is an OPD (organic photodiode) in which an organic semiconductor is used as the active layer 31.

[0076] The lower electrode 23 is an anode electrode of the organic photodiode PD and is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide). The lower electrode 23 is provided separately for each organic photodiode PD. The lower buffer layer 32, active layer 31, upper buffer layer 33, and upper electrode 24 are provided continuously across multiple organic photodiodes PD. Specifically, the lower buffer layer 32, active layer 31, upper buffer layer 33, and upper electrode 24 are provided overlapping the lower electrode 23 of adjacent organic photodiodes PD and the lower electrode 23 of the organic photodiode PD. The lower electrode 23 is electrically connected to the source electrode 62 at the bottom of the contact hole CH1 near the drive transistor Tr. The lower buffer layer 32, active layer 31, upper buffer layer 33, and upper electrode 24 may be provided separately for each sensor pixel PX.

[0077] The active layer 31 changes its characteristics (e.g., voltage-current characteristics and resistance value) depending on the light irradiated thereto. An organic material is used as the material for the active layer 31. Specifically, the active layer 31 has a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. Examples of low-molecular-weight organic materials that can be used for the active layer 31 include C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (perylene derivative).

[0078] The active layer 31 can be formed using these low-molecular-weight organic materials by a vapor deposition (dry process). In this case, the active layer 31 may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The active layer 31 can also be formed by a coating (wet process). In this case, the active layer 31 is made of a material that combines the above-mentioned low-molecular-weight organic material with a high-molecular-weight organic material. Examples of high-molecular-weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 31 can be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed.

[0079] The lower buffer layer 32 is a hole transport layer, and the upper buffer layer 33 is an electron transport layer. The lower buffer layer 32 and the upper buffer layer 33 are provided to facilitate the holes and electrons generated in the active layer 31 reaching the lower electrode 23 or the upper electrode 24. The lower buffer layer 32 (hole transport layer) is in direct contact with the upper surface of the lower electrode 23, and is also provided on the insulating film 35 between adjacent lower electrodes 23. The active layer 31 is in direct contact with the upper surface of the lower buffer layer 32. The material of the hole transport layer is a metal oxide layer. As the metal oxide layer, tungsten oxide (WO ３ ), molybdenum oxide, etc. are used.

[0080] The upper buffer layer 33 (electron transport layer) is in direct contact with the active layer 31, and the upper electrode 24 is in direct contact with the upper buffer layer 33. Ethoxylated polyethyleneimine (PEIE) is used as the material for the electron transport layer.

[0081] The materials and manufacturing methods of the lower buffer layer 32, the active layer 31, and the upper buffer layer 33 are merely examples, and other materials and manufacturing methods may be used. For example, the lower buffer layer 32 and the upper buffer layer 33 are not limited to single-layer films, and may be formed as laminated films including an electron blocking layer and a hole blocking layer. The lower buffer layer 32 may be an electron transport layer, the upper buffer layer 33 may be a hole transport layer, the lower electrode 23 may be a cathode, and the upper electrode 24 may be an anode.

[0082] The upper electrode 24 is provided on the upper buffer layer 33. The upper electrode 24 is a cathode electrode of the organic photodiode PD and is formed continuously across the entire detection area AA. In other words, the upper electrode 24 is provided continuously on the multiple organic photodiodes PD. The upper electrode 24 faces the multiple lower electrodes 23, sandwiching the lower buffer layer 32, the active layer 31, and the upper buffer layer 33 therebetween. The upper electrode 24 is formed of a light-transmitting conductive material such as ITO or IZO. The upper electrode 24 may also be a laminated film of multiple light-transmitting conductive materials. Note that if the upper electrode 24 is not provided, the upper buffer layer 33 also functions as the upper electrode 24 and serves as the cathode electrode of the photodiode PD.

[0083] The sealing film 210 is provided to cover the plurality of organic photodiodes PD. Specifically, the sealing film 210 is provided on the upper electrode 24. If the sealing film 210 is not provided, the upper electrode 24 also functions as the sealing film 210.

[0084] 10 , each of the first openings OP is provided to penetrate in the third direction Dz through the sealing film 210, the organic photodiode PD (the lower buffer layer 32, the active layer 31, the upper buffer layer 33, and the upper electrode 24) excluding the lower electrode 23, the insulating film 27, the circuit formation layer 29, and the first substrate 21. In other words, the portion where the first opening OP is not provided overlaps at least the signal line SL and the gate line GL (see FIG. 8 ).

[0085] In the detection device 1 of this embodiment, a plurality of first openings OP are provided in an area that overlaps with the detection area AA and comes into contact with the finger Fg, etc. As a result, even when the detection device 1 is worn on the skin of the finger Fg, etc. and used for a long period of time, sweat generated from the finger Fg, etc. is discharged to the outside through the ventilation holes 221 via the first openings OP. Therefore, the breathability of the detection device 1 is improved, and even when the detection device 1 is worn on the skin of the finger Fg, etc. and placed next to the skin, stuffiness due to sweat is suppressed, allowing it to be used for a long period of time.

[0086] 6 to 10 are merely examples and can be changed as appropriate depending on the arrangement of the organic photodiode PD. The configuration of the organic photodiode PD shown in FIGS. 9 and 10 is merely an example and can be changed as appropriate. For example, the upper electrode 24 may be the anode electrode of the organic photodiode PD, and the lower electrode 23 may be the cathode electrode of the organic photodiode PD.

[0087] 11 is a schematic cross-sectional view of a detection device according to Modification 1 of Embodiment 1. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0088] As shown in Figure 11, in the detection device 1A related to variant 1 of the first embodiment, compared to the detection device 1 related to the first embodiment, the side wall of the first opening OP is covered with the same material 211 as the sealing film 210.

[0089] This makes it possible to easily cover the sidewall of the first opening OP with only the sealing film 210 without using a member such as the resin film 55 .

[0090] 12 is a schematic cross-sectional view of a detection device according to Modification 2 of Embodiment 1. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0091] 12 , in the detection device 1B according to the second modification of the first embodiment, compared to the detection device 1 according to the first embodiment, a second substrate 50 is provided on a sealing film 210. A plurality of first openings OP are provided penetrating from the second substrate 50 to the first substrate 21 in the third direction Dz. The sidewalls of the first openings OP provided in the second substrate 50 are covered with a resin film 55.

[0092] The second substrate 50 overlaps the first substrate 21 in the third direction Dz and faces the first substrate 21 .

[0093] The second substrate 50 is an insulating substrate, similar to the first substrate 21, and may be, for example, a glass substrate such as quartz or alkali-free glass. The second substrate 50 is not limited to a flat plate shape and may have a curved surface. In this case, the second substrate 50 is formed in a strip shape using, for example, PET (Poly Ethylene Terephthalate), which is a film-like synthetic resin. The second substrate 50 covers the sealing film 210 and is a deformable substrate.

[0094] The configuration and operation of the detection device 1B related to the detection device 2 according to the first embodiment are substantially the same as those of the detection device 1 according to the first embodiment, and therefore will not be described.

[0095] 13 is a schematic cross-sectional view of a detection device according to Modification 3 of Embodiment 1. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0096] 13 , in a detection device 1C according to Modification 3 of the first embodiment, compared to the detection device 1 according to the first embodiment, a second substrate 50 is provided on a sealing film 210. A first opening OP is provided so as to penetrate from the second substrate 50 to the first substrate 21 in the third direction Dz. The sidewall of the first opening OP is covered not with a resin film 55 but with the same material 56 as the second substrate 50.

[0097] This makes it possible to easily cover the sidewall of the first opening OP with only the second substrate 50 without using a member such as the resin film 55 .

[0098] (Embodiment 2) Fig. 14 is a plan view schematically showing a plurality of pixels and a first opening of a detection device according to a second embodiment. Fig. 15 is an enlarged schematic diagram of a sensor unit according to the second embodiment. In the following description, the same components as those described in the above-mentioned embodiments are designated by the same reference numerals, and duplicated description will be omitted. In addition, the VII-VII' cross section of Fig. 14 and the X-X' cross section of Fig. 15 are shown with the same reference numerals designated to the same components as those described in embodiment 1.

[0099] As shown in Fig. 14, in the detection device 1D according to the second embodiment, each of the first openings OP is provided in a substantially rectangular shape in a region surrounded by the gate lines GL and the signal lines SL. More specifically, as shown in Fig. 15, the first openings OP extend along the gate lines GL and the signal lines SL. Furthermore, the first openings OP are provided in regions that do not overlap with the electrodes of the driving transistors Tr.

[0100] In this embodiment, the area of ​​the first opening OP is larger in the detection area AA than in the detection device 1 according to the first embodiment, and therefore, stuffiness due to sweat can be more effectively suppressed.

[0101] (Embodiment 3) Fig. 16 is a plan view schematically showing a plurality of pixels and a first opening of a detection device according to a third embodiment. Fig. 17 is a plan view schematically showing an enlarged view of a photosensor in the peripheral region of Fig. 16. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII' of Fig. 16. In the following description, the same components as those described in the above-mentioned embodiments are designated by the same reference numerals, and redundant description will be omitted.

[0102] 16 , in a detection device 1E according to the third embodiment, a plurality of organic photodiodes PD are provided in a detection area AA and a peripheral area GA of a first substrate 21. A plurality of first openings OP1 are provided along the second direction Dy in a region of the peripheral area GA surrounded by the gate lines GL and the signal lines SL.

[0103] 17 , in the detection device 1E, the pitch of the multiple gate lines GL1 aligned adjacent to the first opening OP1 in the peripheral area GA is narrower than the pitch of the gate lines GL in the detection area AA. Note that when the multiple first openings OP1 are provided in the peripheral area GA along the first direction Dx, the pitch of the multiple signal lines SL aligned adjacent to the first opening OP1 may be narrower than the pitch of the signal lines SL in the detection area AA.

[0104] This makes it possible to easily form the first opening OP1 since the distance L2 between the multiple gate lines GL1 in the peripheral area GA is narrower than the distance L1 between the multiple gate lines GL in the detection area AA.

[0105] 18 , in the detection device 1E, first openings OP1 are provided penetrating from the sealing film 210 to the first substrate 21 in the third direction Dz. In this embodiment, the multiple first openings OP1 are provided in an area overlapping with the peripheral area GA, but are not provided in an area overlapping with the detection area AA. In addition, side walls of the multiple first openings OP1 are covered with a resin film 55.

[0106] As a result, even when the detection device 1E is worn on the skin of the finger Fg or the like and used for a long period of time, sweat from the finger Fg or the like is discharged to the outside through the first opening OP1 and the ventilation opening 221. Therefore, even when the detection device 1E is worn on the skin of the finger Fg or the like and placed next to the skin, stuffiness due to sweat is suppressed, and the detection device 1E can be used for a long period of time.

[0107] 16, 17, and 18 are merely examples and can be changed as appropriate. The first openings OP1 are not provided in some areas of the peripheral area GA, but are not limited to this and may be provided in, for example, the entire peripheral area GA.

[0108] The detection device 1E according to the third embodiment can be combined with the detection device 1 according to the first embodiment. That is, a configuration may be adopted in which a plurality of first openings OP, OP1 are provided in the detection area AA and the peripheral area GA. In this case, stuffiness due to sweat can be more effectively suppressed.

[0109] 19 is a schematic cross-sectional view of a detection device according to Modification 1 of Embodiment 3. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0110] As shown in Figure 19, in the detection device 1F related to variant example 1 of the third embodiment, compared to the detection device 1E related to the third embodiment, the sidewall of the first opening OP1 is covered with the same material 211 as the sealing film 210.

[0111] This makes it possible to easily cover the sidewall of the first opening OP1 with only the sealing film 210, without using a member such as the resin film 55.

[0112] 20 is a schematic cross-sectional view of a detection device according to Modification 2 of Embodiment 3. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0113] 20 , in a detecting device 1G according to Modification 2 of the third embodiment, compared to a detecting device 1E according to the third embodiment, a second substrate 50 is provided on a sealing film 210. A first opening OP1 is provided so as to penetrate from the second substrate 50 to the first substrate 21 in the third direction Dz. A sidewall of the first opening OP provided in the second substrate 50 is covered with a resin film 55.

[0114] The configuration and operation of the detection device 1G according to the second modified example of the third embodiment are substantially the same as those of the detection device 1E according to the third embodiment, and therefore will not be described.

[0115] 21 is a schematic cross-sectional view of a detection device according to Modification 3 of Embodiment 3. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0116] 21 , in a detecting device 1H according to Modification 3 of the third embodiment, compared to the detecting device 1E according to the third embodiment, a second substrate 50 is provided on a sealing film 210. A first opening OP is provided penetrating from the second substrate 50 to the first substrate 21 in the third direction Dz. The sidewall of the first opening OP1 is covered not with a resin film 55 but with the same material 56 as the second substrate 50.

[0117] This makes it possible to easily cover the sidewall of the first opening OP1 with only the second substrate 50, without using a member such as the resin film 55.

[0118] (Embodiment 4) Figure 22 is a plan view schematically showing a plurality of pixels, a first opening, and a second opening of a detection device according to a fourth embodiment. Figure 23 is a cross-sectional view taken along the line XXI-XXI' in Figure 22. In the following description, the same components as those described in the above-mentioned embodiments are designated by the same reference numerals, and redundant description will be omitted.

[0119] As shown in Figure 22, in the detection device 1I according to the fourth embodiment, compared to the detection device 1 according to the first embodiment, a second substrate 50 is provided on a sealing film 210. The second substrate 50 has a plurality of second openings OP2. The second substrate 50 is made of a mesh-shaped material in a plan view. Furthermore, each of the second openings OP2 overlaps, in whole or in part, with a first opening OP. Each of the plurality of second openings OP2 is sized on the order of microns.

[0120] 23, in the detection device 1I, the second substrate 50 has a single-layer structure. However, the second substrate 50 is not limited to this, and may be, for example, a laminate of two or more layers.

[0121] The centers of the second openings OP2 and the first openings OP do not coincide with each other in some portions, the center-to-center distances of the second openings OP2 are irregular, and the center-to-center distances of the first openings OP are constant. Note that the centers of the second openings OP2 and the first openings OP may coincide with each other in some portions.

[0122] In detail, the center-to-center distances D1 to D14 of the plurality of second openings OP2 are different from one another, but the center-to-center distances X1 to X5 of the plurality of first openings OP are the same.

[0123] As a result, even if an opening similar to the first opening OP cannot be provided in the second substrate 50 or if the positions of the openings in the second substrate and the first opening OP cannot be aligned, by providing multiple second openings OP2, sweat from the finger Fg or the like is discharged to the outside through the second openings OP2 and the first openings OP and the ventilation opening 221. Therefore, even if the detection device 1G is attached to the skin of the finger Fg or the like and is adjacent to the skin, stuffiness due to sweat is suppressed and the detection device 1G can be used for a long time.

[0124] (Manufacturing method of embodiment 5) Next, a manufacturing method of embodiment 5 will be described. The manufacturing method of embodiment 5 is a manufacturing method for manufacturing a detection device 1C according to modified example 3 of the first embodiment. FIG. 24 is an explanatory diagram for explaining the manufacturing method of embodiment 5. Note that in FIG. 24, the configuration of each layer is simplified to facilitate understanding. Furthermore, in the following description, the same components as those described in the above-mentioned embodiments are assigned the same reference numerals, and duplicated description will be omitted.

[0125] As shown in FIG. 24, in the method of manufacturing the detection device 1C, a circuit formation layer 29, an organic photodiode PD, and a sealing film 210 are laminated in this order on the first substrate 21 (step ST1).

[0126] Next, a first opening OP is formed penetrating from the sealing film 210 to the first substrate 21 in the third direction Dz (step ST2).

[0127] Next, the second substrate 50 is laminated on the sealing film 210 (step ST3). Finally, the second substrate 50 is heated (step ST4). The heating method is, for example, a reflow process.

[0128] The pressure at the first opening OP is lower than the pressure outside the second substrate 50, and the melting points of the sealing film 210 and the first substrate 21 are higher than those of the second substrate 50. Therefore, in step ST4, the portion of the second substrate 50 that overlaps with the first opening OP melts and deforms due to the pressure difference between the second substrate 50 and the first opening OP. As a result, the portion of the second substrate 50 that overlaps with the first opening OP deforms in the third direction Dz along the inner wall of the hole toward the first substrate 21 (step ST4). The sidewall of the first opening OP is then covered with the same material 56 as the second substrate 50, and when heating is completed, the material 56 hardens. In this manner, the detection device 1C according to the third modification of the first embodiment is manufactured.

[0129] In the manufacturing method of the detection device 1C according to the third modification of the first embodiment, the second substrate 50 can be easily made from a single plate, and a hole can be formed in the portion of the second substrate 50 that overlaps with the first opening OP, thereby covering the side wall of the first opening OP. Note that the manufacturing method shown in FIG. 24 is merely an example and can be modified as appropriate.

[0130] Although preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention naturally fall within the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made without departing from the gist of each of the above-described embodiments and modifications.

[0131] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I Detector 10 Sensor section 21 First substrate 23 Lower electrode 24 Upper electrode 27 Insulating film 29 Circuit formation layer 31 Active layer 32 Lower buffer layer 33 Upper buffer layer 50 Second substrate OP, OP1 First opening OP2 Second opening PD Organic photodiode AA Detection area GA Peripheral area PX Sensor pixel

Claims

1. A detection device comprising: a first substrate; a plurality of organic photodiodes disposed on the first substrate, the organic photodiodes having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode; a detection region in which the organic photodiodes are disposed; a sealing film covering the detection region; and a plurality of first openings extending from at least the sealing film to the first substrate.

2. The detection device according to claim 1, further comprising a second substrate covering the sealing film, wherein the first openings are provided penetrating from the second substrate to the first substrate.

3. A detection device as described in claim 1 or 2, comprising a plurality of sensor pixels arranged in a matrix in the detection region, each having the organic photodiode, the sensor pixels being surrounded by adjacent gate lines and adjacent signal lines, the first opening being provided in an area overlapping the sensor pixels and arranged in a matrix in the detection region.

4. The detection device according to claim 1 or 2, wherein the areas of the plurality of first openings are substantially equal to each other.

5. The detection device according to claim 1 or 2, wherein each of the plurality of first openings is provided in an area surrounded by adjacent gate lines and adjacent signal lines.

6. The detection device according to claim 1 or 2, wherein the plurality of first openings are provided in an area where the lower electrode is not arranged in a plan view.

7. The detection device according to claim 1, wherein a side wall of the first opening is covered with the same material as the sealing film.

8. The detection device of claim 2, wherein a sidewall of the first opening is covered with the same material as the second substrate.

9. The detection device according to claim 1 or 2, further comprising a peripheral region adjacent to the detection region, and the first opening is provided in the peripheral region.

10. The detection device according to claim 3, further comprising a peripheral region adjacent to the detection region and wiring connected to the gate line or the signal line, the first opening being provided in the peripheral region, and the pitch of the multiple wirings arranged adjacent to the first opening in the peripheral region being narrower than the pitch of the gate lines or the signal lines in the detection region.

11. The detection device according to claim 9, wherein a side wall of the first opening is covered with the same material as the sealing film.

12. The detection device according to claim 2, further comprising a peripheral region adjacent to the detection region, the first opening being provided in the peripheral region, and a sidewall of the first opening being covered with the same material as the second substrate.

13. The detection device according to claim 1, further comprising a second substrate provided on the sealing film, the second substrate having a mesh-like structure.

14. A method for manufacturing a detection device, comprising: a first step of laminating a circuit formation layer, an organic photodiode, and a sealing film covering the organic photodiode, in that order, on one surface of a first substrate; a second step of forming a first opening from the sealing film to the first substrate in a direction perpendicular to the first substrate, after the first step; a third step of laminating a second substrate on the sealing film, after the second step; and a fourth step of heating the second substrate, after the third step.

15. The method for manufacturing a detection device described in claim 14, wherein in the fourth step, the pressure in the first opening is lower than the pressure outside the second substrate, and the melting points of the sealing film and the first substrate are higher than those of the second substrate.

16. A detection device comprising: a first substrate; a plurality of photodiodes on the first substrate, the photodiodes having a lower electrode, a lower buffer layer, an active layer, and an upper buffer layer that also functions as an upper electrode; a detection region in which the photodiodes are disposed; a sealing film covering the detection region; and a plurality of first openings extending from at least the sealing film to the first substrate.

17. A detection device comprising: a first substrate; a plurality of photodiodes provided on the first substrate, the photodiodes having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode that also functions as a sealing film; a detection region in which the photodiodes are disposed; and a plurality of first openings extending from at least the upper electrode to the first substrate.

18. A method for manufacturing a detection device, comprising: a first step of laminating a circuit formation layer, a photodiode, and a sealing film covering the photodiode, in that order, on one surface of a first substrate; a second step of forming a first opening from the sealing film to the first substrate in a direction perpendicular to the first substrate, after the first step; a third step of laminating a second substrate on the photodiode, after the second step; and a fourth step of heating the second substrate, after the third step.

Images