Electric field distribution adjustment apparatus and plasma etching machine

Abstract

An electric field distribution adjustment apparatus, and a plasma etching machine using the electric field distribution adjustment apparatus. The electric field distribution adjustment apparatus comprises a first shielding plate (105) and a second shielding plate (106), wherein the first shielding plate (105) is provided with a hollow hole (1051); the second shielding plate (106) is connected to the first shielding plate (105), and the two shielding plates can move relative to each other; and the opening degree of the hollow hole (1051) can be adjusted when the second shielding plate (106) moves relative to the first shielding plate (105). The first shielding plate (105) and the second shielding plate (106) can both shield an electric field. The electric field distribution adjustment apparatus is provided with two shielding plates that can shield an electric field, wherein the two shielding plates can move relative to each other, and during the relative movement process, the second shielding plate (106) adjusts the opening degree of the hollow hole (1051) in the first shielding plate (105), thereby adjusting the shielding degree of an electric field generated by a plasma coupling coil (107) of a plasma etching machine, such that the etching uniformity is improved by means of changing the electric field when the etching uniformity of the plasma etching machine is poor. The etching uniformity is improved by means of changing the electric field, thereby improving an etching effect.

Description

Electric field distribution regulating device and plasma etching machine

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on August 25, 2023, with application number 202311088737.9 and invention name “Electric field distribution adjustment device and plasma etcher”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the technical field of semiconductor processing equipment, and more specifically, to an electric field distribution regulating device, and also to a plasma etching machine using the electric field distribution regulating device. Background Art

[0003] Plasma etchers are widely used in the semiconductor industry. Their working principle is that under vacuum and low pressure, the radio frequency generated by the ICP (Inductive Coupled Plasma) radio frequency power supply is output to the annular plasma coupling coil. The etching gas mixed in a certain proportion is coupled to glow discharge to generate high-density plasma. Under the action of the RF (Radio Frequency) radio frequency of the bias electrode, these plasmas bombard the surface of the substrate, breaking the semiconductor chemical bonds in the pattern area of ​​the substrate, generating volatile substances with the etching gas, which are separated from the substrate in the form of gas and are extracted from the vacuum pipeline.

[0004] However, the plasma coupling coil in the plasma etcher is fixedly installed, and the electric field distribution generated is unchanged under the same power, voltage and other conditions. When the etching uniformity is poor, it is impossible to improve the etching uniformity by changing the electric field.

[0005] Therefore, how to effectively improve the uniformity of etching by changing the electric field is an urgent problem to be solved by those skilled in the art.

[0006] Summary of the Invention

[0007] In view of this, the present invention provides an electric field distribution adjustment device, which is equipped with two shielding plates capable of shielding the electric field. The two shielding plates can move relative to each other, and during this relative movement, the second shielding plate adjusts the opening of the hollow holes in the first shielding plate, thereby adjusting the degree of shielding of the electric field generated by the plasma coupling coil of the plasma etcher. When the etching uniformity of the plasma etcher is poor, the etching uniformity can be improved by changing the electric field. The present invention also provides a plasma etcher using the above-mentioned electric field distribution adjustment device, which can improve the etching uniformity and enhance the etching effect by changing the electric field.

[0008] To achieve the above object, the present invention provides the following technical solutions:

[0009] An electric field distribution regulating device, comprising:

[0010] a first shielding plate, wherein the first shielding plate is provided with a hollow hole;

[0011] The second shielding plate is connected to the first shielding plate, and the two shielding plates can move relative to each other; when the second shielding plate moves relative to the first shielding plate, the opening of the hollow hole can be adjusted.

[0012] Optionally, in the above-mentioned electric field distribution adjusting device, the second shielding plate is capable of rotating relative to the first shielding plate.

[0013] Optionally, the above-mentioned electric field distribution adjustment device further includes an operating rod, which is movably connected to the first shielding plate or the second shielding plate and is used to drive the shielding plate connected thereto to rotate relative to the other shielding plate.

[0014] Optionally, in the above-mentioned electric field distribution adjustment device, the operating rod is hinged to one of the two shielding plates; the operating rod is provided with an arc-shaped long hole for being inserted and engaged with a limit screw.

[0015] Optionally, the electric field distribution adjustment device further includes a spacer ring; the first shielding plate and the second shielding plate are respectively sleeved on the spacer ring.

[0016] Optionally, in the above-mentioned electric field distribution adjustment device, a convex edge is provided on the side of the edge of the first shielding plate facing the second shielding plate, and the convex edge is circled around the outer circumference of the second screen plate.

[0017] Optionally, in the above-mentioned electric field distribution adjustment device, there are multiple hollow holes; and the second shielding plate includes multiple shielding parts for adjusting the opening of the hollow holes.

[0018] Optionally, in the above-mentioned electric field distribution adjustment device, the number of the shielding portions and the number of the hollow holes are the same, and the two correspond one to one.

[0019] Optionally, in the above-mentioned electric field distribution adjustment device, all of the shielding parts can move simultaneously relative to the first shielding plate.

[0020] Optionally, in the above-mentioned electric field distribution adjustment device, each of the shielding parts is separated from each other, each of the shielding parts is movably connected to the first shielding plate, and each of the shielding parts is linked by a connecting piece.

[0021] Optionally, in the above-mentioned electric field distribution adjustment device, the second shielding plate further includes a mounting portion; each of the shielding portions is fixedly connected to the mounting portion and arranged along the circumference of the mounting portion.

[0022] Optionally, the above-mentioned electric field distribution adjustment device also includes an insulating plate connected to the first shielding plate and / or the second shielding plate, and the insulating plate is stacked with the first shielding plate and the second shielding plate; the insulating plate is located on the side of the first shielding plate facing away from the second shielding plate, or is located on the side of the second shielding plate facing away from the first shielding plate.

[0023] Optionally, in the above-mentioned electric field distribution adjustment device, the insulating plate is fixedly connected to the first shielding plate, or fixedly connected to the second shielding plate.

[0024] Optionally, in the above-mentioned electric field distribution adjustment device, the opening adjustment range of the hollow hole is from fully open to fully blocked.

[0025] A plasma etcher comprises a shielding cover and a plasma reaction chamber fixedly connected, wherein the space enclosed by the shielding cover and the plasma reaction chamber is divided into a first space and a second space by a dielectric window; a plasma coupling coil is provided in the first space; the plasma etcher further comprises a gas jet and an electric field distribution adjustment device as described in any one of the above technical solutions; the gas jet passes through the plasma coupling coil and the dielectric window and extends into the second space; the electric field distribution adjustment device is arranged between the plasma coupling coil and the dielectric window.

[0026] Optionally, in the above-mentioned plasma etcher, the operating rod of the electric field distribution adjusting device extends out of the first space, and the limiting screw of the electric field distribution adjusting device is fixed to the shielding cover and / or the plasma reaction chamber.

[0027] Optionally, in the above plasma etcher, the first shielding plate and the second shielding plate are connected via the dielectric window, and at least one of the first shielding plate and the second shielding plate is movably mounted on the dielectric window.

[0028] Optionally, in the above plasma etcher, the second shielding plate is fixed to the dielectric window, and the first shielding plate is movably mounted on the dielectric window.

[0029] Optionally, in the above plasma etcher, the insulating plate of the electric field distribution adjustment device is located between the plasma coupling coil and a shielding plate adjacent to the insulating plate.

[0030] Optionally, in the above-mentioned plasma etcher, a bias electrode is provided in the second space, and a wafer placement plate is arranged on the side of the bias electrode facing the nozzle head; the wafer placement plate and the bias electrode are connected by a connecting sleeve arranged on the outer periphery of the two; a groove is provided on the end face of the connecting sleeve, and a wafer positioning ring is installed in the groove.

[0031] The present invention provides an electric field distribution adjustment device comprising a first shielding plate and a second shielding plate; the first shielding plate is provided with a hollow hole; the second shielding plate is connected to the first shielding plate and can move relative to the first shielding plate; the second shielding plate can adjust the opening of the hollow hole when it moves relative to the first shielding plate. The first shielding plate and the second shielding plate can each shield the electric field.

[0032] When applying the above-mentioned auxiliary electric field diameter-changing device, two shielding plates are arranged between the plasma coupling coil and the dielectric window of the plasma etcher. By making the first shielding plate and the second shielding plate move relative to each other, the opening of the hollow hole of the first shielding plate can be adjusted to adjust the distribution of the plasma in the plasma reaction chamber of the plasma etcher acting on the wafer, thereby playing the role of adjusting the etching uniformity.

[0033] Obviously, in the electric field distribution adjustment device provided by the present invention, the opening of the hollow hole in the first shielding plate can be adjusted during the relative movement of the two shielding plates, thereby adjusting the shielding degree of the electric field generated by the plasma coupling coil of the plasma etcher, thereby achieving the improvement of etching uniformity by changing the electric field when the etching uniformity of the plasma etcher is poor.

[0034] The present invention also provides a plasma etcher using the above-mentioned electric field distribution regulating device, which can improve etching uniformity and enhance etching effect by changing the electric field. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0036] FIG1 is a schematic structural diagram of a plasma etcher provided in an embodiment of the present invention;

[0037] FIG2 is a schematic diagram of the internal structure of a shielding cover provided by an embodiment of the present invention;

[0038] FIG3 is a schematic diagram of the three-dimensional structure of a first shielding plate provided in an embodiment of the present invention;

[0039] FIG4 is a schematic diagram of the three-dimensional structure of a second shielding plate provided in an embodiment of the present invention;

[0040] FIG5 is a schematic diagram of a top view of the structure of the electric field distribution adjustment device provided by an embodiment of the present invention when the hollow holes are completely blocked;

[0041] FIG6 is a schematic structural diagram of the electric field distribution adjustment device according to an embodiment of the present invention when the operating lever starts to widen its opening after the hollow hole is completely blocked;

[0042] 7 is a schematic structural diagram of the electric field distribution adjustment device provided by an embodiment of the present invention when the operating lever is further adjusted from a small hollow hole opening to a larger opening;

[0043] FIG8 is a schematic structural diagram of the electric field distribution adjustment device provided by an embodiment of the present invention when the hollow holes are fully open;

[0044] Among them, in Figures 1 to 8: chamber cover 101; chamber cover lining 102; dielectric window 103; insulating plate 104; first shielding plate 105; hollow hole 1051; second shielding plate 106; shielding portion 1061; mounting portion 1062; plasma coupling coil 107; nozzle 108; shielding cover 109; fastener 110; spacer ring 111; gas source 112; operating rod 113; long strip hole 1131; limit screw 114; connecting rod 115; hinge shaft 116; excitation source matching network 117; excitation source RF power supply 118; wafer positioning ring 119; wafer 120; wafer placement plate 121; connecting sleeve 122; plasma reaction chamber 123; liner 124; bias electrode 125; gas guide cover 126; pressure control valve 127; vacuum pump 128; bias matching network 129; bias RF power supply 130. DETAILED DESCRIPTION

[0045] An embodiment of the present invention discloses an electric field distribution adjustment device comprising two shielding plates capable of shielding the electric field. The two shielding plates are capable of relative movement, and during this relative movement, the second shielding plate adjusts the opening of the hollow holes in the first shielding plate, thereby adjusting the degree of shielding of the electric field generated by the plasma coupling coil of the plasma etcher. This improves etching uniformity by changing the electric field when the plasma etcher exhibits poor etching uniformity. An embodiment of the present invention also discloses a plasma etcher employing the above-described electric field distribution adjustment device, which can improve etching uniformity and enhance etching performance by changing the electric field.

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0047] Referring to Figures 1-8 , an embodiment of the present invention provides an electric field distribution adjustment device, comprising a first shielding plate 105 and a second shielding plate 106. The first shielding plate 105 is provided with a hollow hole 1051. The second shielding plate 106 is connected to the first shielding plate 105 and can move relative to it. The second shielding plate 106 can adjust the opening of the hollow hole 1051 when it moves relative to the first shielding plate 105. The first shielding plate 105 and the second shielding plate 106 can each shield the electric field.

[0048] When applying the above-mentioned auxiliary electric field diameter-changing device, two shielding plates are arranged between the plasma coupling coil 107 and the dielectric window 103 of the plasma etcher. By making the first shielding plate 105 and the second shielding plate 106 move relative to each other, the opening of the hollow hole 1051 of the first shielding plate 105 can be adjusted to adjust the distribution of the plasma in the plasma reaction chamber 123 of the plasma etcher acting on the wafer 120, thereby playing the role of adjusting the etching uniformity.

[0049] Obviously, the relative movement of the two shielding plates in the electric field distribution adjustment device provided in this embodiment can adjust the opening of the hollow hole in the first shielding plate 105, and then adjust the shielding degree of the electric field generated by the plasma coupling coil 107 of the plasma etcher, so as to improve the etching uniformity by changing the electric field when the etching uniformity of the plasma etcher is poor.

[0050] In some embodiments, the aperture adjustment range of the hollow hole is set from fully open to completely blocked, so as to fully utilize the area of ​​the hollow hole and maximize the adjustment of the electric field distribution, which is beneficial to improving etching uniformity. Of course, the aperture adjustment range of the hollow hole can also be set from partially open to fully open, or from fully open to partially open, and this embodiment is not specifically limited thereto.

[0051] The relative motion of the first shielding plate 105 and the second shielding plate 106 can be configured as relative rotation. For example, one of the two shielding plates can remain stationary relative to the plasma etcher, while the other can rotate about its own axis, thereby generating relative rotation between the two shielding plates. Alternatively, the two shielding plates can rotate about the same axis at different angular velocities, thereby generating relative rotation between the two shielding plates. In the technical solution provided in this embodiment, the first shielding plate 105 and the second shielding plate 106 are configured as a stacked arrangement. Of course, the positional relationship between the first and second shielding plates can also be configured in other ways depending on the relative motion between the first and second shielding plates, and this embodiment does not specifically limit this.

[0052] For easy operation, the electric field distribution adjustment device further includes an operating rod 113, which is movably connected to the first shielding plate 105 or the second shielding plate 106, and is used to drive the shielding plate connected to the operating rod 113 to rotate relative to the other shielding plate.

[0053] In some embodiments, operating rod 113 is hinged to one of the two shielding plates and is provided with an arcuate elongated hole 1131 for engaging with a stop screw 114. Stop screw 114 is secured to the plasma etcher. To facilitate installation, a connecting rod 115 is fixedly connected to the shielding plate connected to operating rod 113. The end of operating rod 113 and connecting rod 115 are hingedly connected to each other via a hinge shaft 116. The elongated hole 1131 can be located in the middle of operating rod 113.

[0054] The electric field distribution adjustment device further includes a spacer ring 111; the first shielding plate 105 and the second shielding plate 106 are respectively sleeved on the spacer ring 111, and the first and second shielding plates are connected to each other via the spacer ring 111 so as to be able to move relative to each other. The spacer ring 113 can be fixed to the dielectric window 103 of the plasma etcher, and the first shielding plate 105 and / or the second shielding plate 106 can rotate about the spacer ring 111. Furthermore, to avoid simultaneously controlling both shielding plates to remain fixed about the spacer ring 111 when adjusting the hollow hole 1051 to an appropriate opening, the two shielding plates are preferably configured so that only one can rotate about the spacer ring 111, while the other is fixed to the spacer ring 111. For example, the first shielding plate 105 is fixed to the spacer ring 111, and the second shielding plate 106 is sleeved on the spacer ring 111 so as to be able to rotate about the spacer ring 111, or the first shielding plate 105 is sleeved on the spacer ring 111 so as to be able to rotate about the spacer ring 111, and the second shielding plate 106 is fixed to the spacer ring 111.

[0055] Furthermore, in the above-mentioned electric field distribution regulating device, a convex edge is provided on the side of the edge of the first shielding plate 105 facing the second shielding plate 106, and the convex edge is circled around the outer periphery of the second screen plate.

[0056] In addition to relative rotation, the first shielding plate 105 and the second shielding plate 106 can also be configured to slide relative to each other. Accordingly, one of the two shielding plates can be slidably mounted on the other. The two shielding plates can also be configured to swing relative to each other. Accordingly, the second shielding plate 106 can be hingedly connected to the hollow hole 1051 of the first shielding plate 105 so as to be openable and closable. This embodiment does not limit the relative motion of the first shielding plate 105 and the second shielding plate 106.

[0057] The second shielding plate 106 includes a blocking portion 1061 for adjusting the opening of the hollow hole 1051. The first shielding plate 105 can have one hollow hole 1051, and accordingly, one or more blocking portions 1061 can be provided. The first shielding plate 105 can also have multiple hollow holes 1051, and accordingly, one or more blocking portions 1061 can be provided.

[0058] In some embodiments, the number of shielding portions 1061 and the number of hollow holes 1051 are the same, and the two correspond one to one. In other embodiments, the number of shielding portions 1061 is set to be less than the number of hollow holes 1051, and some or all of the shielding portions 1061 are used to block multiple hollow holes 1051. In other embodiments, the number of shielding portions 1061 is set to be greater than the number of hollow holes 1051, and the opening of some or all of the hollow holes 1051 is adjusted by multiple shielding portions 1061.

[0059] In order to facilitate adjustment of the opening of each hollow hole 1051 , in an implementation scheme in which a plurality of shielding portions 1061 are provided, all of the shielding portions 1061 are configured to be able to move simultaneously relative to the first shielding plate 105 .

[0060] In some embodiments, all shielding portions 1061 are configured to be separate from each other, and each shielding portion 1061 is movably connected to the first shielding plate 105, and each shielding portion 1061 is linked through a connecting piece to enable all shielding portions 1061 to move simultaneously relative to the first shielding plate 105.

[0061] In other embodiments, the second shielding plate 106 includes a mounting portion 1062 in addition to the shielding portion 1061. Each shielding portion 1061 is fixedly connected to the mounting portion 1062 and arranged circumferentially around the mounting portion 1062. All shielding portions 1061 are integrally connected via the mounting portion 1062, enabling simultaneous movement relative to the first shielding plate 105. Furthermore, in embodiments where the first shielding plate 105 and the second shielding plate 106 rotate relative to each other and are connected via a spacer ring 111, the mounting portion 1062 of the second shielding plate 106 is inserted into the spacer ring 111.

[0062] The electric field distribution adjustment device further includes an insulating plate 104, which is connected to the first shielding plate 105 and / or the second shielding plate 106. The insulating plate 104 is stacked with the first and second shielding plates 105 and 106. The insulating plate 104 is located on the side of the first shielding plate 105 facing away from the second shielding plate 106, or on the side of the second shielding plate 106 facing away from the first shielding plate 105. When the electric field distribution adjustment device is used, the insulating plate 104 needs to be placed between the shielding plates and the plasma coupling coil 107 of the plasma etcher.

[0063] The insulating plate 104 is configured to be fixedly connected to the first shielding plate 105, or fixedly connected to the second shielding plate 106. This embodiment does not limit the connection method between the insulating plate 104 and the shielding plate; it only needs to ensure that it is arranged between the plasma coupling coil 107 and the shielding plate adjacent to the plasma coupling coil 107.

[0064] Please refer to Figures 1-4. In one embodiment, a through hole is provided in the middle of the first shielding plate 105, which is plugged into the spacer ring 111, and a plurality of hollow holes 1051 are arranged along the circumference of the through hole; the second shielding plate 105 includes a mounting portion 1062 and a plurality of shielding portions 1061 fixed to the outer periphery of the mounting portion 1062; the number of the shielding portions 1061 and the hollow holes 1051 is the same, and the two correspond one to one; a through hole is provided in the middle of the mounting portion 1062, which is plugged into the spacer ring 111; the first shielding plate 105 is arranged between the second shielding plate 106 and the insulating plate 104, and the insulating plate 104 and the spacer ring 111 are fixed to the dielectric window 103 of the plasma etcher by fasteners 110. The first shielding plate 105 can rotate around the spacer ring 111, and the second shielding plate 106 is fixedly connected to the spacer ring 111.

[0065] FIG6 illustrates a state in which each hollow hole 1051 in the electric field distribution adjustment device is completely blocked by the corresponding blocking portion 1061. This prevents the electric field generated by the plasma coupling coil 107 from passing through the hollow holes 1051 and is completely shielded. Pushing the operating rod 113 in the direction c1 shown in FIG6 causes the first shielding plate 105 to rotate about the spacer ring 111 to a representative position shown in FIG7 . At this point, a gap a1 is created between the blocking portions 1061 of the first shielding plate 105 and the second shielding plate 106. The electric field generated by the plasma coupling coil 107 can act on the plasma reaction chamber 123 through the gap a1. Further pushing the operating rod 113 in the direction c2 causes the first shielding plate 105 to continue rotating until reaching the state shown in FIG8 . During this process, the electric field applied by the plasma coupling coil 107 to the plasma reaction chamber 123 gradually increases as the gap between the first shielding plate 105 and the second shielding plate 106 increases. By driving the operating rod 113 in the reverse direction, the electric field applied by the plasma coupling coil 107 to the plasma reaction chamber 123 can be gradually reduced. Thus, by adjusting the operating rod 113, the distribution of the electric field can be adjusted, thereby adjusting the distribution of the plasma in the plasma reaction chamber 123 applied to the wafer 120, thereby adjusting the etching uniformity.

[0066] An embodiment of the present invention further provides a plasma etcher, comprising a fixedly connected shielding cover 109 and a plasma reaction chamber 123, the space enclosed by the two being divided into a first space and a second space by a dielectric window 103; a plasma coupling coil 107 is provided in the first space; the first space also comprises a gas jet 108 and an electric field distribution adjustment device; the electric field distribution adjustment device is the electric field distribution adjustment device provided in the above embodiment; the gas jet 108 passes through the plasma coupling coil 107 and the dielectric window 103 and extends into the second space; the electric field distribution adjustment device is arranged between the plasma coupling coil 107 and the dielectric window 103.

[0067] The operating rod 113 of the electric field distribution adjustment device extends out of the first space to avoid operating the operating rod 113 after removing the shielding cover 109, which is convenient for users. The limiting screw 114 of the electric field distribution adjustment device is fixed to the shielding cover 109 and / or the plasma reaction chamber 123.

[0068] The first shielding plate 105 and the second shielding plate 106 can be arranged to be connected through the dielectric window 103 (i.e., the first shielding plate 105 and the second shielding plate 106 can be respectively mounted on the dielectric window 103), and at least one of the first shielding plate 105 and the second shielding plate 106 can be movably mounted on the dielectric window 103. In some embodiments, the second shielding plate 106 is fixedly connected to the dielectric window 103, and the first shielding plate 105 can be movably mounted on the dielectric window 103.

[0069] As shown in Figure 1, the first shielding plate 105 and the second shielding plate 106 are respectively installed on the dielectric window 103 through the spacer ring 111 that is plugged into the two. The insulating plate 104 and the spacer ring 111 of the electric field distribution adjustment device are fixed to the dielectric window 103 by fasteners 110. The first shielding plate 105, the second shielding plate 106 and the insulating plate 104 are stacked, and the insulating plate 104 is located between the plasma coupling coil 107 and the shielding plate adjacent to the insulating plate 104.

[0070] A bias electrode 125 is provided in the second space, and a wafer placement plate 121 is arranged on the side of the bias electrode 125 facing the nozzle head 108; the wafer placement plate 121 and the bias electrode 125 are connected by a connecting sleeve 122 arranged on the outer periphery of the two; a groove is provided on the end face of the connecting sleeve 122, and a wafer positioning ring 119 is installed in the groove for positioning the wafer 120 to be etched.

[0071] An inner liner 124 is provided in the plasma reaction chamber 123 , and a bias electrode 125 extends into the inner liner 124 .

[0072] A chamber cover 101 is provided at the open end of the plasma reaction chamber 123. The chamber cover 101 extends into the space enclosed by the shield 109 and the plasma reaction chamber 123. A dielectric window 103 is mounted on the chamber cover 101. A seal is formed between the dielectric window 103 and the chamber cover 101. A chamber cover liner 102 is secured to the chamber cover 101 to protect it.

[0073] The showerhead 108 is connected to the gas source 112 via a pipeline; the excitation RF power supply 118 is connected to the plasma coupling coil 107 via the excitation source matching network 117; the bias RF power supply 130 is connected to the bias electrode 125 via the bias matching network 129; the plasma reaction chamber 123 is connected to the gas duct 126; and the vacuum pump 128 is connected to the gas duct 126 via the pressure control valve 127. During operation, the showerhead 108 injects gas from the gas source 112 into the plasma reaction chamber 126, generating plasma under the action of the plasma coupling coil 107. The bias electrode 125 provides a bias voltage under the action of the bias RF power supply 130 and the bias matching network 129, accelerating the plasma and causing it to bombard the wafer 120. The vacuum pump 128 extracts gas from the plasma reaction chamber 123 under the regulation of the pressure control valve 127.

[0074] The plasma etcher provided in this embodiment uses the electric field distribution adjustment device provided in the above embodiment to improve etching uniformity by changing the electric field. Of course, the plasma etcher provided in this embodiment also has other effects related to the electric field distribution adjustment device provided in the above embodiment, which will not be repeated here.

[0075] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0076] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An electric field distribution adjustment device, characterized in that: include: A first shielding plate, wherein the first shielding plate is provided with a hollow hole; A second shielding plate, wherein the second shielding plate is connected to the first shielding plate, and the two shielding plates can move relative to each other; When the second shielding plate moves relative to the first shielding plate, the opening of the hollow hole can be adjusted.

2. The electric field distribution regulating device according to claim 1, characterized in that: The second shielding plate is rotatable relative to the first shielding plate.

3. The electric field distribution regulating device according to claim 2, characterized in that: It also includes an operating rod, which is movably connected to the first shielding plate or the second shielding plate and is used to drive the shielding plate connected thereto to rotate relative to the other shielding plate.

4. The electric field distribution regulating device according to claim 3, characterized in that: The operating rod is hinged to one of the two shielding plates; the operating rod is provided with an arc-shaped long strip hole for inserting and cooperating with a limit screw.

5. The electric field distribution regulating device according to claim 2, characterized in that: It also includes a spacer ring; the first shielding plate and the second shielding plate are respectively sleeved on the spacer ring.

6. The electric field distribution regulating device according to claim 2, characterized in that: A convex edge is provided on one side of the edge of the first shielding plate facing the second shielding plate, and the convex edge is circled around the outer periphery of the second screen plate.

7. The electric field distribution regulating device according to claim 1 or 2, characterized in that: There are a plurality of hollow holes; and the second shielding plate includes a plurality of shielding parts for adjusting the opening of the hollow holes.

8. The electric field distribution regulating device according to claim 7, characterized in that: The number of the shielding portions and the number of the hollow holes are the same, and the two correspond one to one.

9. The electric field distribution regulating device according to claim 7, characterized in that: All of the shielding parts can move relative to the first shielding plate simultaneously.

10. The electric field distribution regulating device according to claim 9, characterized in that: The shielding parts are separate from each other, and are movably connected to the first shielding plate, and are linked to each other through a connecting piece.

11. The electric field distribution regulating device according to claim 7, characterized in that: The second shielding plate further includes a mounting portion; each of the shielding portions is fixedly connected to the mounting portion and arranged along the circumference of the mounting portion.

12. The electric field distribution regulating device according to claim 1, characterized in that: It also includes an insulating plate connected to the first shielding plate and / or the second shielding plate, and the insulating plate is stacked with the first shielding plate and the second shielding plate; the insulating plate is located on the side of the first shielding plate facing away from the second shielding plate, or on the side of the second shielding plate facing away from the first shielding plate.

13. The electric field distribution regulating device according to claim 12, characterized in that: The insulating plate is fixedly connected to the first shielding plate, or is fixedly connected to the second shielding plate.

14. The electric field distribution regulating device according to claim 1, characterized in that: The opening adjustment range of the hollow hole is from fully open to fully blocked.

15. A plasma etcher, characterized in that: It comprises a shielding cover and a plasma reaction chamber which are fixedly connected, and the space enclosed by the shielding cover and the plasma reaction chamber is divided into a first space and a second space by a dielectric window; a plasma coupling coil is arranged in the first space; it also comprises a jet head and an electric field distribution regulating device according to any one of claims 1 to 14; the jet head passes through the plasma coupling coil and the dielectric window and extends into the second space; The electric field distribution adjusting device is arranged between the plasma coupling coil and the dielectric window.

16. The plasma etcher according to claim 15, characterized in that: The operating rod of the electric field distribution adjusting device extends out of the first space, and the limiting screw of the electric field distribution adjusting device is fixed to the shielding cover and / or the plasma reaction chamber.

17. The plasma etcher according to claim 15, characterized in that: The first shielding plate and the second shielding plate are connected through the dielectric window, and at least one of the first shielding plate and the second shielding plate is movably mounted on the dielectric window.

18. The plasma etcher according to claim 17, characterized in that: The second shielding plate is fixed to the dielectric window, and the first shielding plate is movably installed on the dielectric window.

19. The electric field distribution regulating device according to claim 15, characterized in that: The insulating plate of the electric field distribution adjusting device is located between the plasma coupling coil and a shielding plate adjacent to the insulating plate.

20. The electric field distribution adjustment device according to claim 15, characterized in that: A bias electrode is provided in the second space, and a wafer placement plate is arranged on the side of the bias electrode facing the nozzle; the wafer placement plate and the bias electrode are connected by a connecting sleeve arranged on the outer periphery of the two; a groove is provided on the end face of the connecting sleeve, and a wafer positioning ring is installed in the groove.

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