Gas mixing device and semiconductor process apparatus

By designing a gas mixing device, one end in which the first flow channel and the second flow channel communicate with the gas mixing cavity extends to the center, forming a hedge and spoiler, solving the problem of low uniformity of gas mixing in semiconductor processes, achieving more uniform gas mixing and meeting process needs.

WO2025044446A1PCT designated stage expired Publication Date: 2025-03-06PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO LTD
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Patent Information

Application Number
PCT/CN2024/101402
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-08-29
Filing Date
2024-06-25
Publication Date
2025-03-06

AI Technical Summary

Technical Problem

In the existing semiconductor processes, the gas mixing uniformity is low, which affects the quality of the process steps.

Method used

A gas mixing device is designed, which includes one end in which the first flow channel and the second flow channel communicate with the gas mixing cavity extends toward the center of the gas mixing cavity, and a spoiler is formed by hedging to achieve more uniform mixing of the gas.

Benefits of technology

The spoiler formed by hedging significantly improves the mixing uniformity of the gas in the mixing chamber, meeting the demand for gas mixing in semiconductor processes.

✦ Generated by Eureka AI based on patent content.

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Abstract

A gas mixing device and a semiconductor process apparatus, relating to the field of semiconductors. The gas mixing device comprises a body (110). A gas mixing cavity (111) is formed in the body (110). A first flow channel (113), a second flow channel (115), and a gas outlet flow channel (117) which are communicated with the gas mixing cavity (111) are further formed in the body (110). The end of the first flow channel (113) and the end of the second flow channel (115) which are communicated with the gas mixing cavity (111) both extend towards the center of the gas mixing cavity (111). A plurality of gases can be mixed more uniformly, meeting the requirements of the semiconductor process.
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Description

Gas mixing device and semiconductor process equipment Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a gas mixing device and semiconductor process equipment. Background Art

[0002] During the semiconductor product manufacturing process, two or more mixed gases are usually introduced into the process chamber to complete the process steps. The existing gas mixing uniformity introduced into the process chamber is low, which affects the quality of the process steps.

[0003] Summary of the Invention

[0004] The objects of the present invention include, for example, providing a gas mixing device and a semiconductor process setting, which can make multiple gases mix more evenly, thereby meeting the requirements of the semiconductor process.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a gas mixing device, comprising a body, wherein a gas mixing chamber is provided in the body, and the body is further provided with a first flow channel, a second flow channel and an outlet flow channel communicating with the gas mixing chamber;

[0007] One end of the first flow channel and the second flow channel communicating with the gas mixing chamber both extends toward the center of the gas mixing chamber.

[0008] In an optional embodiment, the first flow channel includes a first air intake section and a first pressurizing section;

[0009] The flow area of ​​the first air inlet section is larger than the flow area of ​​the first pressurizing section;

[0010] One end of the first air inlet section is in communication with the exterior of the body, and the other section is in communication with one end of the first pressurizing section. The other section of the first pressurizing section is in communication with the gas mixing chamber and extends obliquely toward the center of the gas mixing chamber.

[0011] The second flow channel includes a second air inlet section and a second pressurizing section;

[0012] The flow area of ​​the second air inlet section is larger than the flow area of ​​the second pressurizing section;

[0013] One end of the second air inlet section is communicated with the outside of the body, and the other section is communicated with one end of the second pressurizing section. The other section of the second pressurizing section is communicated with the mixing chamber and extends obliquely toward the center of the mixing chamber.

[0014] In an optional embodiment, the first flow channel further includes a first pressure stabilizing section;

[0015] The flow area of ​​the first pressure stabilizing section is larger than the flow area of ​​the first air inlet section, and one end of the first pressure stabilizing section is connected to the first air inlet section, and the other end is connected to the first pressurizing section;

[0016] The first flow channel further includes a second pressure stabilizing section;

[0017] The flow area of ​​the second pressure stabilizing section is larger than the flow area of ​​the second air inlet section, and one end of the second pressure stabilizing section is connected to the second air inlet section, and the other end is connected to the second pressurizing section.

[0018] In an optional embodiment, the first pressurizing section includes a plurality of branch flow channels A arranged in the same direction, one end of each of the branch flow channels A is connected to the first air inlet section, and the other end of each of the branch flow channels A is connected to the air mixing chamber, and each of the branch flow channels A extends obliquely toward the center of the air mixing chamber, and the total flow area of ​​the plurality of branch flow channels A is smaller than the flow area of ​​the first air inlet section;

[0019] The second pressurizing section includes a plurality of branch flow channels B arranged in the same direction, one end of each of the branch flow channels B is connected to the second air intake section, and the other end of each of the branch flow channels B is connected to the air mixing chamber, and each of the branch flow channels B extends obliquely toward the center of the air mixing chamber, and the total flow area of ​​each of the branch flow channels B is smaller than the flow area of ​​the second air intake section.

[0020] In an optional embodiment, the openings of one end of the plurality of branch flow channels A communicating with the gas mixing chamber are inclined toward the center of the gas mixing chamber, and the angle between the openings and the depth direction of the gas mixing chamber is in the range of 30°-60°.

[0021] The openings at one end of the plurality of branch flow channels B communicating with the gas mixing chamber are inclined toward the center of the gas mixing chamber, and the angle between the openings and the depth direction of the gas mixing chamber is in the range of 30°-60°.

[0022] In an optional embodiment, the gas mixing chamber is flat, and the first flow channel and the second flow channel are respectively connected to two sides of the gas mixing chamber in the length direction.

[0023] In an optional embodiment, the outlet flow channel is arranged at the center of the body, and stepped spoiler surfaces are provided on both sides of the mixing chamber close to the outlet flow channel. The spoiler surfaces can disrupt the gas in the mixing chamber to make the gas mixing more uniform.

[0024] In an optional embodiment, the body includes a first body member, a second body member and a third body member;

[0025] The gas mixing chamber is partially disposed in the second body member and partially disposed in the third body member. The first air inlet section and the second air inlet section are respectively recessed in one side of the first body member. The first pressure stabilizing section and the second pressure stabilizing section are both disposed on the other side of the first body member and are in communication with each other. The outlet flow channel and a portion of the gas mixing chamber are disposed in the third body member. The first body member, the second body member, and the third body member are stacked in sequence.

[0026] In an optional embodiment, the cross-sections of the first air inlet section, the first pressure stabilizing section, and the first pressurizing section are all circular, and the diameter of the first pressure stabilizing section is larger than the diameter of the first air inlet section, and the diameter of the first air inlet section is larger than the diameter of the first pressurizing section;

[0027] The cross-sections of the second air inlet section, the second pressure stabilizing section and the second pressurizing section are all circular, and the diameter of the second pressure stabilizing section is larger than the diameter of the second air inlet section, and the diameter of the second air inlet section is larger than the diameter of the second pressurizing section.

[0028] In a second aspect, the present invention provides a semiconductor process setup comprising the gas mixing device described in any one of the aforementioned embodiments.

[0029] The beneficial effects of the embodiments of the present invention include, for example:

[0030] The present application extends one end of the first flow channel and the second flow channel connected to the mixing chamber toward the center of the mixing chamber, so that the two gases will collide with each other to form a turbulent flow after flowing into the mixing chamber, thereby allowing the two gases to mix more evenly in the mixing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0032] FIG1 is a schematic cross-sectional view of the structure of a gas mixing device provided by an embodiment of the present invention.

[0033] Icons: 100-gas mixing device; 110-main body; 111-gas mixing chamber; 113-first flow channel; 115-second flow channel; 117-outlet flow channel; 119-first air inlet section; 121-first pressurizing section; 123-first pressure stabilizing section; 125-second air inlet section; 127-second pressurizing section; 129-second pressure stabilizing section; 131-branch flow channel A; 133-branch flow channel B; 135-spoiler surface; 137-first main body; 139-second main body; 141-third main body. DETAILED DESCRIPTION

[0034] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0035] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0036] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0037] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0038] In addition, the terms "first", "second", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0039] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0040] Please refer to Figure 1. This embodiment provides a semiconductor process equipment, which can be a coating equipment. The semiconductor process equipment includes an equipment body 110 and a gas mixing device 100. The equipment body 110 has a process chamber. The gas mixing device 100 is connected to the process chamber to transport evenly mixed process gas into the process chamber.

[0041] In this embodiment, the gas mixing device 100 includes a body 110, which has a gas mixing chamber 111 disposed therein. The body 110 is further provided with a first flow channel 113, a second flow channel 115, and an outlet flow channel 117 that communicate with the gas mixing chamber 111. The ends of the first flow channel 113 and the second flow channel 115 that communicate with the gas mixing chamber 111 both extend toward the center of the gas mixing chamber 111. The first flow channel 113 and the second flow channel 115 are used to connect to different gas pipelines, and the outlet flow channel 117 is used to communicate with the reaction chamber.

[0042] In this embodiment, the ends of the first flow channel 113 and the second flow channel 115 that are connected to the mixing chamber 111 are extended toward the center of the mixing chamber 111. In this way, the two gases will collide with each other to form a turbulent flow after flowing into the mixing chamber 111, thereby allowing the two gases to be mixed more evenly in the mixing chamber 111.

[0043] Of course, in other embodiments of the present application, the number of inlet flow channels can be set according to process requirements, and can be two, three, four or even more, as long as they can achieve hedging in the gas mixing chamber 111.

[0044] In this embodiment, the first flow channel 113 includes a first air inlet section 119 and a first pressurizing section 121. The flow area of ​​the first air inlet section 119 is larger than the flow area of ​​the first pressurizing section 121. One end of the first air inlet section 119 is connected to the exterior of the body 110, and the other section is connected to one end of the first pressurizing section 121. The other section of the first pressurizing section 121 is connected to the mixing chamber 111 and extends obliquely toward the center of the mixing chamber 111. The second flow channel 115 includes a second air inlet section 125 and a second pressurizing section 127. The flow area of ​​the second air inlet section 125 is larger than the flow area of ​​the second pressurizing section 127. One end of the second air inlet section 125 is connected to the exterior of the body 110, and the other section is connected to one end of the second pressurizing section 127. The other section of the second pressurizing section 127 is connected to the mixing chamber 111 and extends obliquely toward the center of the mixing chamber 111.

[0045] The flow area of ​​the first pressurizing section 121 is set to be smaller than the flow area of ​​the first air inlet section 119, and the flow area of ​​the second pressurizing section 127 is set to be smaller than the flow area of ​​the second air inlet section 125. In this way, when the two gases pass through the first pressurizing section 121 and the second pressurizing section 127 respectively, the flow rate of the gas can be accelerated, thereby making the collision of the two gases in the mixing chamber 111 more intense, which can make the two gases mix more evenly. After the collision of the two gases, they will be decelerated and decompressed in the mixing chamber 111, thereby forming a turbulent flow, which can further improve the uniformity of the gas mixture. Secondly, the ends of the first pressurizing section 121 and the second pressurizing section 127 that are connected to the mixing chamber 111 are tilted and extended toward the center of the mixing chamber 111. Compared with directly facing each other, this allows the two gases to mix according to a preset ratio.

[0046] Referring to Figure 1 , in this embodiment, the first flow channel 113 further includes a first pressure-stabilizing section 123. The flow area of ​​the first pressure-stabilizing section 123 is greater than the flow area of ​​the first air inlet section 119, and one end of the first pressure-stabilizing section 123 is connected to the first air inlet section 119, while the other end is connected to the first pressurizing section 121. The first flow channel 113 further includes a second pressure-stabilizing section 129. The flow area of ​​the second pressure-stabilizing section 129 is greater than the flow area of ​​the second air inlet section 125, and one end of the second pressure-stabilizing section 129 is connected to the second air inlet section 125, while the other end is connected to the second pressurizing section 127.

[0047] This embodiment includes a first pressure-stabilizing section 123 and a second pressure-stabilizing section 129 to stabilize pressure, allowing the gas flowing into the first and second pressurizing sections 121, 127 to flow at a relatively constant pressure and flow rate, thereby achieving offset pressure and ensuring uniform mixing and accurate proportioning. Furthermore, the first and second pressure-stabilizing sections 123, 129 can store some gas, preventing pressure fluctuations in the first and second pressurizing sections 121, 127 caused by fluctuations in the input gas pressure.

[0048] In this embodiment, the first pressurizing section 121 includes a plurality of branch flow channels A131 arranged in the same direction. One end of each of the branch flow channels A131 is connected to the first air inlet section 119, and the other end of each of the branch flow channels A131 is connected to the gas mixing chamber 111. Each of the branch flow channels A131 extends obliquely toward the center of the gas mixing chamber 111. The total flow area of ​​the plurality of branch flow channels A131 is less than the flow area of ​​the first air inlet section 119. The second pressurizing section 127 includes a plurality of branch flow channels B133 arranged in the same direction. One end of each of the branch flow channels B133 is connected to the second air inlet section 125, and the other end of each of the branch flow channels B133 is connected to the gas mixing chamber 111. Each of the branch flow channels B133 extends obliquely toward the center of the gas mixing chamber 111. The total flow area of ​​the plurality of branch flow channels B133 is less than the flow area of ​​the second air inlet section 125.

[0049] In this embodiment, the first pressurizing section 121 is configured as a plurality of parallel branch flow channels A131, and the second pressurizing section 127 is configured as a plurality of parallel branch flow channels B133. In this way, multiple air flows will collide in the mixing chamber 111, thereby allowing the two gases to mix more evenly.

[0050] In this embodiment, the openings of the ends of the multiple branch flow channels A131 that are connected to the mixing chamber 111 are tilted toward the center of the mixing chamber 111, and the angles with the depth direction of the mixing chamber 111 are in the range of 30°-60°. The openings of the ends of the multiple branch flow channels B133 that are connected to the mixing chamber 111 are tilted toward the center of the mixing chamber 111, and the angles with the depth direction of the mixing chamber 111 are in the range of 30°-60°. The angles of the outlet directions of the branch flow channels A131 and B133 are set to be in the range of 30°-60°, so that the two airflows can be counteracted in the central area in the depth direction and the central area in the length direction of the mixing chamber 111, thereby making the two gases mix more evenly.

[0051] Referring to Figure 1 , in this embodiment, the mixing chamber 111 is flat, thicker at the longitudinal edges and thinner in the middle. The first flow channel 113 and the second flow channel 115 communicate with the longitudinal sides of the mixing chamber 111, respectively. Specifically, branch flow channel A 131 and branch flow channel B 133 are disposed on either side of the longitudinal direction of the mixing chamber 111, with their openings inclined upward toward the longitudinal center of the mixing chamber 111.

[0052] In this embodiment, the outlet flow channel 117 is arranged at the center of the main body 110, and stepped spoiler surfaces 135 are provided on both sides of the mixing chamber 111 close to the outlet flow channel 117. The spoiler surfaces 135 can turbulently flow the gas in the mixing chamber 111 to make the gas mixing more uniform.

[0053] The provision of the spoiler surface 135 allows the airflow to be further disturbed when it flows from the mixing chamber 111 toward the outlet passage 117 , thereby improving the uniformity of the mixed air.

[0054] In this embodiment, the step-shaped spoiler surface 135 allows the gas mixing chamber 111 to gradually shrink toward the top.

[0055] In this embodiment, the stepped spoiler surface 135 has multiple steps, and may be a three-step, four-step, or the like.

[0056] Referring to Figure 1 , in this embodiment, the main body 110 includes a first main body member 137, a second main body member 139, and a third main body member 141. The gas mixing chamber 111 is partially disposed in the second main body member 139, and partially disposed in the third main body member 141. The first air inlet section 119 and the second air inlet section 125 are respectively recessed on one side of the first main body member 137. The first pressure stabilizing section 123 and the second pressure stabilizing section 129 are both disposed on the other side of the first main body member 137 and are connected to each other. The outlet flow channel 117 and a portion of the gas mixing chamber 111 are disposed in the third main body member 141. The first main body member 137, the second main body member 139, and the third main body member 141 are stacked in this order. This facilitates the processing and formation of flow channels within the main body 110.

[0057] In this embodiment, the cross-sections of the first air inlet section 119, the first pressure-stabilizing section 123, and the first pressurizing section 121 are all circular, and the diameter of the first pressure-stabilizing section 123 is larger than the diameter of the first air inlet section 119, which in turn is larger than the diameter of the first pressurizing section 121. The cross-sections of the second air inlet section 125, the second pressure-stabilizing section 129, and the second pressurizing section 127 are all circular, and the diameter of the second pressure-stabilizing section 129 is larger than the diameter of the second air inlet section 125, which in turn is larger than the diameter of the second pressurizing section 127.

[0058] In this embodiment, the first body 137, the second body 139 and the third body 141 are provided with mutually cooperating positioning structures, so that the three can be assembled and positioned during installation. The positioning structures can be positioning columns and positioning grooves.

[0059] In summary, the gas mixing device 100 and semiconductor process equipment provided in this embodiment have the following beneficial effects:

[0060] In this embodiment, the ends of the first flow channel 113 and the second flow channel 115 that are connected to the mixing chamber 111 are extended toward the center of the mixing chamber 111. In this way, the two gases will collide with each other to form a turbulent flow after flowing into the mixing chamber 111, thereby allowing the two gases to be mixed more evenly in the mixing chamber 111.

[0061] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A gas mixing device, characterized in that: The invention comprises a body (110), wherein a gas mixing chamber (111) is arranged in the body (110), and the body (110) is further provided with a first flow channel (113), a second flow channel (115) and an outlet flow channel (117) which are communicated with the gas mixing chamber (111); One end of the first flow channel (113) and the second flow channel (115) that are in communication with the gas mixing chamber (111) both extend towards the center of the gas mixing chamber (111).

2. The gas mixing device according to claim 1, characterized in that: The first flow channel (113) comprises a first air intake section (119) and a first pressurizing section (121); The flow area of ​​the first air inlet section (119) is greater than the flow area of ​​the first pressurizing section (121); One end of the first air inlet section (119) is in communication with the outside of the body (110), and the other section is in communication with one end of the first pressurizing section (121); the other section of the first pressurizing section (121) is in communication with the gas mixing chamber (111) and extends obliquely toward the center of the gas mixing chamber (111); The second flow channel (115) comprises a second air intake section (125) and a second pressurizing section (127); The flow area of ​​the second air inlet section (125) is greater than the flow area of ​​the second pressurizing section (127); One end of the second air inlet section (125) is connected to the outside of the main body (110), and the other section is connected to one end of the second pressurizing section (127). The other section of the second pressurizing section (127) is connected to the mixing chamber (111) and extends obliquely toward the center of the mixing chamber (111).

3. The gas mixing device according to claim 2, characterized in that: The first flow channel (113) further includes a first pressure stabilizing section (123); The flow area of ​​the first pressure stabilizing section (123) is greater than the flow area of ​​the first air inlet section (119), and one end of the first pressure stabilizing section (123) is connected to the first air inlet section (119), and the other end is connected to the first pressurizing section (121); The first flow channel (113) further includes a second pressure stabilizing section (129); The flow area of ​​the second pressure stabilizing section (129) is greater than the flow area of ​​the second air inlet section (125), and one end of the second pressure stabilizing section (129) is connected to the second air inlet section (125), and the other end is connected to the second pressurizing section (127).

4. The gas mixing device according to claim 2 or 3, characterized in that: The first pressurizing section (121) comprises a plurality of branch flow channels A (131) arranged in the same direction, one end of each of the plurality of branch flow channels A (131) being connected to the first air inlet section (119), the other end of each of the plurality of branch flow channels A (131) being connected to the air mixing chamber (111), and each of the plurality of branch flow channels A (131) being inclined and extending toward the center direction of the air mixing chamber (111), and the total flow area of ​​the plurality of branch flow channels A (131) being smaller than the flow area of ​​the first air inlet section (119); The second pressurizing section (127) comprises a plurality of branch flow channels B (133) arranged in the same direction. One end of each of the branch flow channels B (133) is connected to the second air intake section (125), and the other ends of each of the branch flow channels B (133) are connected to the air mixing chamber (111), and each of the branch flow channels extends obliquely toward the center of the air mixing chamber (111), and the total flow area of ​​each of the branch flow channels B (133) is smaller than the flow area of ​​the second air intake section (125).

5. The gas mixing device according to claim 4, characterized in that: The openings of one end of the plurality of branch flow channels A (131) communicating with the gas mixing chamber (111) are arranged to be inclined toward the center of the gas mixing chamber (111), and the angle between the openings and the depth direction of the gas mixing chamber (111) is in the range of 30°-60°; The openings of one end of the plurality of branch flow channels B (133) communicating with the gas mixing chamber (111) are arranged to be inclined toward the center of the gas mixing chamber (111), and the angle between the openings and the depth direction of the gas mixing chamber (111) is in the range of 30°-60°.

6. The gas mixing device according to claim 1, characterized in that: The gas mixing chamber (111) is flat, and the first flow channel (113) and the second flow channel (115) are respectively connected to two sides of the gas mixing chamber (111) in the length direction.

7. The gas mixing device according to claim 1, characterized in that: The outlet flow channel (117) is arranged at the center of the main body (110), and stepped spoiler surfaces (135) are arranged on both sides of the gas mixing chamber (111) close to the outlet flow channel (117). The spoiler surfaces (135) can turbulently flow the gas in the gas mixing chamber (111) so that the gas is mixed more evenly.

8. The gas mixing device according to claim 3, characterized in that: The body (110) includes a first body member (137), a second body member (139) and a third body member (141); Part of the mixing chamber (111) is arranged on the second main body (139), and the other part is arranged on the third main body (141); the first air intake section (119) and the second air intake section (125) are respectively recessed on one side of the first main body (137); the first pressure stabilizing section (123) and the second pressure stabilizing section (129) are both arranged on the other side of the first main body (137) and are correspondingly connected; the outlet flow channel (117) and part of the mixing chamber (111) are arranged on the third main body (141); the first main body (137), the second main body (139) and the third main body (141) are stacked in sequence.

9. The gas mixing device according to claim 8, characterized in that: The cross-sections of the first air intake section (119), the first pressure stabilizing section (123) and the first pressurizing section (121) are all circular, and the diameter of the first pressure stabilizing section (123) is larger than the diameter of the first air intake section (119), and the diameter of the first air intake section (119) is larger than the diameter of the first pressurizing section (121); The cross-sections of the second air intake section (125), the second pressure stabilizing section (129) and the second pressurizing section (127) are all circular, and the diameter of the second pressure stabilizing section (129) is larger than the diameter of the second air intake section (125), and the diameter of the second air intake section (125) is larger than the diameter of the second pressurizing section (127).

10. A semiconductor process equipment, characterized in that: The invention comprises the gas mixing device according to any one of claims 1 to 9.

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