Wafer bearing device, temperature control method thereof and semiconductor process equipment

Abstract

The invention discloses a wafer bearing device, a temperature control method thereof and semiconductor process equipment. The wafer bearing device comprises a heating assembly, the heating assembly comprises a heater body, the heater body comprises an inner heating area and an outer heating area, the outer heating area is located outside the inner heating area in the radial direction, and an inner area heating part and an inner area temperature measuring part are arranged in the inner heating area; an outer area heating part and an outer area temperature measuring part are arranged in the outer heating area; an annular protruding structure is arranged on the edge of the water cooling disc, the water cooling disc is connected with the heater body in a sealed mode through the annular protruding structure, the width and the height of the annular protruding structure are set according to the working condition temperature needed by the wafer bearing device, an inner cooling area is arranged in the annular protruding structure, and the annular protruding structure is an outer cooling area. And a gap is formed between the inner cooling area and the heater body. The cooling device has high cooling capacity under the high-temperature working condition and the low-temperature working condition, and the high-temperature working condition and the low-temperature working condition can be considered simultaneously.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a wafer carrier device, a temperature control method thereof, and semiconductor process equipment. Background Art

[0002] In the high-temperature process of physical vapor deposition (PVD), the heating components in the wafer carrier are required to heat the wafer to a certain process temperature. A large amount of process heat will be generated during the process, which will cause certain interference to the wafer carrier. If the cooling capacity of the wafer carrier is insufficient, it will passively heat up under the action of the process heat. Therefore, the wafer carrier needs to have a strong cooling capacity. However, the cooling capacity of the wafer carrier is different at different temperatures. It is difficult for a wafer carrier to meet both the high-temperature process and the low-temperature process.

[0003] For example, if a suspended water cooling structure is used, there is no contact between the water cooling plate and the heater body, and the heat exchange between the heater body and the water cooling plate is achieved through air heat conduction and heat radiation. Under high temperature conditions, it can have a strong cooling capacity, but under low temperature conditions, the heat exchange capacity of air heat conduction and heat radiation is poor, the cooling capacity is low, and it cannot take into account high and low temperature conditions at the same time. Other contact water cooling structures will have problems such as poor temperature uniformity and fixed and unadjustable cooling capacity. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a wafer carrier device and a temperature control method thereof and semiconductor process equipment to solve at least one technical problem in the prior art.

[0005] To achieve the above objectives, the present application embodiment adopts the following technical solutions: In the first aspect, an embodiment of the present application provides a wafer carrier device, comprising: a heating component, the heating component comprising a heater body, the heater body comprising an inner heating zone and an outer heating zone, the outer heating zone being located outside the inner heating zone in a radial direction, the inner heating zone being provided with an inner zone heating component and an inner zone temperature measuring component, the outer heating zone being provided with an outer zone heating component and an outer zone temperature measuring component; a water cooling plate, the edge of the water cooling plate being provided with an annular protrusion structure, the water cooling plate being sealed and connected to the heater body via the annular protrusion structure, the width and height of the annular protrusion structure being set according to the required operating temperature of the wafer carrier device, the annular protrusion structure being within an inner cooling zone, the annular protrusion structure being an outer cooling zone, and there being a gap between the inner cooling zone and the heater body.

[0006] In a second aspect, an embodiment of the present application provides a temperature control method for a wafer carrier, which is applied to the wafer carrier as described in the first aspect, and the method includes: obtaining a target temperature of the wafer carrier; obtaining in real time an actual temperature of the inner zone measured by an inner zone temperature measuring component and an actual temperature of the outer zone measured by an outer zone temperature measuring component, and adjusting the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone and the target temperature of the wafer carrier.

[0007] In the third aspect, an embodiment of the present application provides a semiconductor process equipment, comprising: a process chamber, a temperature controller and a wafer carrier, the temperature controller comprising at least one processor and at least one memory, the memory storing a computer program, and when the computer program is executed by the processor, the steps of the method described in the second aspect of the present application are implemented.

[0008] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects: In an embodiment of the present application, a wafer carrier device includes a heating component, the heating component includes a heater body, the heater body includes an inner heating zone and an outer heating zone, the outer heating zone is located outside the inner heating zone in a radial direction, the inner heating zone is provided with an inner zone heating component and an inner zone temperature measuring component, the outer heating zone is provided with an outer zone heating component and an outer zone temperature measuring component; a water cooling plate, an annular protrusion structure is provided on the edge of the water cooling plate, the water cooling plate is sealed and connected to the heater body through the annular protrusion structure, the width and height of the annular protrusion structure are set according to the required working temperature of the wafer carrier device, the annular protrusion structure is the inner cooling zone, the annular protrusion structure is the outer cooling zone, and there is a gap between the inner cooling zone and the heater body. The embodiment of the present application divides the cooling method of the heater body by the water cooling plate into two zones, the outer cooling zone is cooled by solid heat conduction, and the inner cooling zone is cooled by air heat conduction and heat radiation. The cooling capacity of the inner and outer zones is adjusted by adjusting the width and height of the annular protrusion structure of the water cooling plate. The two cooling methods enable the system to have strong cooling capacity under both high-temperature and low-temperature conditions, and can take into account both high and low temperature conditions. At the same time, an inner heating zone and an outer heating zone are respectively provided corresponding to the inner cooling zone and the outer cooling zone. By adjusting the target heating temperatures of the inner and outer heating zones, the direction of the process heat flow can be adjusted in real time, and the cooling capacity can be adjusted online to meet the needs of various working conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings: Figure 1It is a structural schematic diagram of a wafer carrying device in the related art; Figure 2 A schematic structural diagram of a wafer carrying device provided for one embodiment of the present application; Figure 3 A schematic diagram of the width of an annular protrusion structure provided for one embodiment of the present application; Figure 4 A schematic diagram of the height of the annular protrusion structure provided for one embodiment of the present application; Figure 5 A schematic diagram of the inner and outer cooling zones of a water cooling plate provided for one embodiment of the present application; Figure 6 A schematic flow chart of a temperature control method for a wafer carrier provided in accordance with an embodiment of the present application; Figure 7 A schematic flow chart of a temperature control method for a wafer carrier device provided in another embodiment of the present application; Figure 8 A schematic diagram of heat flow direction of a wafer carrier when Ti>To provided in one embodiment of the present application; Fig. 9 A schematic diagram of heat flow direction of a wafer carrier when Ti<To provided in one embodiment of the present application; Fig.10 A schematic flow chart of a temperature control method for a wafer carrier device provided in accordance with another embodiment of the present application. DETAILED DESCRIPTION

[0010] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0011] The terms "first", "second", etc. in this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here. In addition, the "and / or" in this application represents at least one of the connected objects, and the character " / " generally represents that the front and back associated objects are in an "or" relationship. It should be noted that the data involved in this application are all obtained on the premise of obtaining user authorization.

[0012] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0013] In related technologies, such as Figure 1 As shown, the wafer carrier adopts a suspended water cooling structure, including a heater body 1, a water cooling plate 2 and a mounting spindle 3. A heating tube 4 and a thermocouple 5 are arranged in the heater body 1, a cooling water channel 6 and an inlet and outlet water pipe 7 are arranged in the water cooling plate 2, and the wafer carrier is installed in the process chamber 8 through the mounting spindle 3. The heating tube 4 and the thermocouple 5 are respectively connected to the heating power supply 9 outside the process chamber 8, and the cooling water channel 6 is connected to the cooling system 10 outside the process chamber 8 through the inlet and outlet water pipe 7. The cooling system 10 provides cooling liquid (such as water) for the water cooling plate 2. The heater body 1 is used to carry a wafer 11. There is no contact between the water cooling plate 2 and the heater body 1. The heat exchange between the heater body 1 and the water cooling plate 2 is realized by air heat conduction and heat radiation. The cooling capacity of the water cooling plate 2 to the heater body 1 is adjusted by adjusting the distance between the water cooling plate 2 and the heater body 1 and increasing the area of ​​the water cooling plate 2. Since the water cooling disk 2 and the heater body 1 exchange heat only through air heat conduction and thermal radiation, it has a strong cooling capacity under high temperature conditions. However, under low temperature conditions, the air heat conduction and thermal radiation heat exchange capacities are poor, and the cooling capacity is weak, and it cannot take into account high and low temperature conditions at the same time.

[0014] Figure 2 A schematic diagram of the structure of a wafer carrier device provided in one embodiment of the present application. Figure 2 As shown, the wafer carrying device of the embodiment of the present application may specifically include: a heating component (the heating component includes a heater body 1) and a water cooling plate 2, wherein: The heater body 1 includes an inner heating zone and an outer heating zone. The outer heating zone is located outside the inner heating zone in the radial direction. An inner zone heating component 12 and an inner zone temperature measuring component 13 are arranged in the inner heating zone, and an outer zone heating component 14 and an outer zone temperature measuring component 15 are arranged in the outer heating zone.

[0015] An annular protrusion structure 16 is provided on the edge of the water cooling plate 2, and the water cooling plate 2 is sealedly connected to the heater body 1 through the annular protrusion structure 16. The width and height of the annular protrusion structure 16 are set according to the required working temperature of the wafer supporting device. The inside of the annular protrusion structure 16 is the inner cooling zone, and the annular protrusion structure 16 is the outer cooling zone. There is a gap between the inner cooling zone and the heater body 1.

[0016] The wafer carrying device of the embodiment of the present application may further include: a mounting spindle 3. The mounting spindle 3 is respectively connected to the lower wall of the process chamber 8 and the water cooling plate 2, and is used to support the heater body 1 and the water cooling plate 2.

[0017] The heater body 1 may be made of metal, such as stainless steel, aluminum alloy, etc. A heating component and a temperature measuring component are arranged in the heater body 1 .

[0018] The heating components are divided into an inner zone heating component 12 and an outer zone heating component 14, which may be heating tubes, etc. The arrangement of the heating components may be set according to actual needs, and the embodiment of the present application does not impose too many restrictions on this.

[0019] The area affected by the heating of the inner zone heating component 12 is called the inner heating zone, and the area affected by the heating of the outer zone heating component 14 is called the outer heating zone. The main function of the inner zone heating component 12 is to heat the heater body 1, and then heat the wafer 11 carried on the heater body 1. In order to ensure the uniformity of the temperature of the wafer 11, the size of the inner heating zone in the heater body 1 needs to be set to be larger than the maximum size of the wafer 11 required to be carried on the heater body 1. The main function of the outer zone heating component 14 is to offset the cooling capacity of the outer ring of the water cooling plate 2 on the heater body 1. The inner zone heating component 12 and the outer zone heating component 14 are respectively connected to the heating power supply 9 outside the process chamber 8 through power lines.

[0020] The temperature measuring component is also divided into an inner zone temperature measuring component 13 and an outer zone temperature measuring component 15, which can be a thermocouple, a temperature sensor, etc. The inner zone temperature measuring component 13 is used to measure the actual temperature of the inner heating zone, i.e., the inner zone actual temperature, and the outer zone temperature measuring component 15 is used to measure the actual temperature of the outer heating zone, i.e., the outer zone actual temperature.

[0021] The function of the heater body 1 is to heat. The inner zone heating component 12 and the outer zone heating component 14 are powered by the heating power supply 9. The inner zone heating component 12 and the outer zone heating component 14 (such as the resistance of the heating tube) generate heat to heat the heater body 1 to the set target temperature.

[0022] The material of the water cooling plate 2 can be the same as that of the heater body 1. A cooling water channel 6 is provided inside the water cooling plate 2 for passing a coolant (such as water). Two water inlet and outlet pipes 7 are provided on the water cooling plate 2, one is the water inlet pipe and the other is the water outlet pipe. The cooling water channel 6 is connected to the cooling system 10 outside the process chamber 8 through the water inlet and outlet pipes 7. The cooling system 10 provides coolant for the water cooling plate 2. The outermost ring of the water cooling plate 2 is provided with a ring-shaped raised structure 16. The width of the ring-shaped raised structure 16 is △X (such as Figure 3 As shown), the height is △d (as Figure 4 The water cooling plate 2 is sealedly connected to the heater body 1 through the annular protrusion structure 16, and can be connected together by welding, and the welding method can be fusion welding, brazing, diffusion welding, etc. The annular protrusion structure 16 and the outer zone heating component 14 can at least partially overlap in the radial direction of the water cooling plate 2.

[0023] like Figure 5As shown, the water cooling plate 2 is divided into an inner cooling zone and an outer cooling zone, the annular protrusion structure 16 is the outer cooling zone, and the area within the annular protrusion structure 16 is the inner cooling zone. The inner cooling zone of the water cooling plate 2 is spaced apart from the heater body 1, that is, there is a gap between the inner cooling zone of the water cooling plate 2 and the heater body 1, and the outer cooling zone of the water cooling plate 2 is sealed and connected to the heater body 1 to close the gap to form an isolation cavity between the cooling plate 2 and the heater body 1, so the cooling method of the outer cooling zone is solid heat conduction, and the cooling method of the inner cooling zone is air heat conduction and heat radiation.

[0024] It should be noted here that in the vertical direction, the outer zone heating component 14 can be closer to the water cooling plate 2 than the inner zone heating component 12. This is because the main function of the inner zone heating component 12 is to heat the heater body 1, and then heat the wafer 11 carried on the heater body 1, so it is closer to the top. The main function of the outer zone heating component 14 is to offset the cooling capacity of the outer cooling zone of the water cooling plate 2 on the heater body 1, so it is closer to the bottom.

[0025] By adjusting the width △X and the height △d of the annular protrusion structure 16, the cooling capacity of the water cooling plate 2 can be adjusted. The specific principle is as follows: The heat conduction formula is as follows: (1) in, Q is the heat conduction heat flow, λ is the thermal conductivity, A is the area of ​​the water cooling plate 2, T 1 is the temperature of the heater body 1, T 2 is the temperature of water cooling plate 2, △ d is the heat transfer distance between the heater body 1 and the water cooling plate 2.

[0026] It can be seen from the above formula (1) that the cooling capacity of the water cooling plate 2 on the heater body 1 is related to the temperature of the heater body 1. T 1. Temperature of water cooling plate 2 T 2. Thermal conductivity λ 、The area of ​​water cooling plate 2 A , heat transfer distance between heater body 1 and water cooling plate 2 △ d The temperature of the heater body 1 T 1 is determined according to the process requirements. The temperature of the water cooling plate 2 T 2 is equivalent to the temperature of the coolant and can be regarded as a constant value. T 1. T 2. If you are sure, you can change λ , A ,△ d To change the cooling capacity of the water cooling plate 2 on the heater body 1. A,△ d In case of confirmation, λ The larger the value, the stronger the cooling capacity of the water cooling plate 2 on the heater body 1. The area A of the water cooling plate 2 can be divided into the contact area A1 and the non-contact area A2, A=A1+A2, and the thermal conductivity at the contact area A1 is λ is the solid thermal conductivity λ 1. Thermal conductivity at non-contact area A2 λ is the gas thermal conductivity λ 2, λ 1>> λ 2, so different cooling effects can be obtained by adjusting the ratio of A1 and A2.

[0027] From the above, we can see that the thermal conductivity in the heat conduction formula (1) is λ It is an important parameter that determines the heat conduction capacity. λ It is determined by the heat transfer medium. The thermal conductivity of stainless steel λ is 17 watts / (meter degree) (W / (m*K)), the thermal conductivity of air λ It is 0.01~0.04W / (m*K). Under the same other conditions, the ability of solid heat conduction is much greater than that of air heat conduction. Under low temperature conditions, in order to enhance the cooling capacity of the water cooling plate 2, it is necessary to achieve it through solid heat conduction. However, if the cooling area of ​​solid heat conduction is too large, it will lead to too strong cooling capacity under high temperature conditions, resulting in the wafer carrier being unable to heat to the target temperature. Therefore, the embodiment of the present application can allocate the area ratio of the outer cooling zone and the inner cooling zone by controlling the width △X of the annular protrusion structure 16 of the water cooling plate 2. The outer zone has a smaller area ratio and the inner zone has a larger area ratio. In addition, the heat transfer distance △ between the heater body 1 and the water cooling plate 2 in the heat conduction formula (1) d It is another important parameter that determines the heat conduction capacity. d The smaller the height, the greater the heat conduction capacity. Therefore, the embodiment of the present application can adjust the cooling capacity of the inner cooling zone by controlling the height Δd of the annular protrusion structure 16 of the water cooling plate 2.

[0028] Furthermore, the wafer carrier device of the embodiment of the present application may further include: a temperature controller ( Figure 2 (not shown), the temperature controller is used to measure the actual temperature T of the inner zone according to the inner zone temperature measuring component 13. 内实际 , the actual temperature T of the outer zone measured by the outer zone temperature measuring component 15 外实际 and the target temperature T of the wafer carrier 目标 , the target temperature of the outer zone T 外目标 (generally denoted as To), the inner zone heating power P of the inner zone heating component 12 内and the outer zone heating power P of the outer zone heating component 14 外 At least one of them is adjusted to achieve online adjustment of cooling capacity to meet the needs of various working conditions. The specific temperature control process of the wafer carrier device can be found in the relevant description of the following method embodiment, which will not be repeated here.

[0029] It should be noted that when designing the wafer carrier, a heating component with a corresponding heating capacity should be selected according to the required working conditions. That is, the maximum inner zone heating power maxP of the inner zone heating component 12 is set. 内 The first set multiple N1 of the actual cooling power of the inner cooling zone corresponding to the maximum target temperature supported by the wafer carrier device is greater than 1, that is, N1>1; the maximum outer zone heating power maxP of the outer zone heating component 14 is set 外 It is a second set multiple N2 of the actual cooling power of the outer cooling zone corresponding to the maximum target temperature supported by the wafer supporting device. The second set multiple N2 is greater than 1, that is, N2>1.

[0030] For example, if the wafer carrier needs to meet the working conditions of 50℃ and 200℃, the maximum target temperature of the wafer carrier is maxT 目标 is 200°C, that is, the target temperature of the inner zone and the target temperature of the outer zone are 200°C. According to the heat conduction formula (1), theoretical calculation or simulation analysis can be performed to obtain the actual cooling power of the cooling zone in the water cooling disk, that is, the actual cooling power of the inner zone P 内实际 = P1, then set (or select) the maximum inner zone heating power maxP of the inner zone heating component 12 内 =N1*P1, where N1>1, can be set as needed, inner zone heating power P 内 Greater than the actual cooling power P of the inner zone 内实际 =P1, the inner heating zone can start to heat up, and finally the inner heating zone can be heated to the inner zone target temperature Ti=200℃, that is, the inner zone actual temperature T 内实际 =Ti=200℃. Similarly, according to the heat conduction formula (1), theoretical calculation or simulation analysis can be performed to obtain the actual cooling power of the cooling area outside the water cooling disk, that is, the actual cooling power of the outer area P 外实际 = P2, then set (or select) the maximum external zone heating power maxP of the external zone heating component 14 外 =N2*P2, where N2>1, can be set as needed, external zone heating power P 外 Greater than the actual cooling power P of the outer zone 外实际 = P2, the external heating zone can start to heat up, and finally the external heating zone can be heated to the external zone target temperature To = 200 ° C, that is, the actual temperature of the external zone T 外实际 =To=200℃.

[0031] In summary, the wafer carrying device of the embodiment of the present application includes a heating component, the heating component includes a heater body, the heater body includes an inner heating zone and an outer heating zone, the outer heating zone is located outside the inner heating zone in the radial direction, the inner heating zone is provided with an inner zone heating component and an inner zone temperature measuring component, the outer heating zone is provided with an outer zone heating component and an outer zone temperature measuring component; a water-cooling plate, the edge of the water-cooling plate is provided with an annular protrusion structure, the water-cooling plate is sealed and connected to the heater body through the annular protrusion structure, the width and height of the annular protrusion structure are set according to the required working temperature of the wafer carrying device, the annular protrusion structure is the inner cooling zone, and the annular protrusion structure is the outer cooling zone; an installing spindle, the installing spindle is respectively connected to the lower wall of the process chamber and the water-cooling plate, and is used to support the heater body and the water-cooling plate. The embodiment of the present application divides the cooling method of the water cooling plate to the heater body into two zones, the outer zone is cooled by solid heat conduction, and the inner zone is cooled by air heat conduction and heat radiation. The width and height of the annular protrusion structure of the water cooling plate are adjusted to adjust the cooling capacity of the inner and outer zones. The two cooling methods enable the heater to have strong cooling capacity in both high-temperature and low-temperature conditions, and can take into account both high and low temperature conditions. By setting the inner heating zone and the outer heating zone corresponding to the inner cooling zone and the outer cooling zone respectively, and by adjusting the target heating temperatures of the inner and outer heating zones, the direction of the process heat flow can be adjusted in real time, and the cooling capacity can be adjusted online to meet the needs of various working conditions.

[0032] The present application also provides a temperature control method for a wafer carrier. Figure 6 As shown, the temperature control method of the wafer carrier device of the embodiment of the present application is applied to the wafer carrier device of any of the above embodiments, and the temperature control method may specifically include the following steps: S601, obtaining a target temperature of a wafer carrying device.

[0033] In an embodiment of the present application, the executor of the temperature control method of the wafer carrier of the embodiment of the present application is a temperature controller in the wafer carrier of any of the above embodiments, and the temperature controller can be set in the heating power supply of the semiconductor process equipment.

[0034] Target temperature of wafer carrier T 目标 , which is the temperature required for the wafer process, that is, the operating temperature required for the wafer carrier. For example, if the wafer needs to be processed at a temperature of 200°C for PVD, the operating temperature required for the heater is 200°C, and the target temperature of the heater is T 目标 Before the process starts, the target temperature T of the wafer carrier needs to be set in advance. 目标 , and through temperature control, the temperature of the wafer carrier is gradually increased, and the final actual temperature of the wafer carrier is T 实际Stable at target temperature T 目标 , the actual temperature of the wafer is also stable at the target temperature T 目标 Then, start the process.

[0035] S602, obtaining in real time the actual temperature of the inner zone measured by the inner zone temperature measuring component and the actual temperature of the outer zone measured by the outer zone temperature measuring component, and adjusting at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone and the target temperature of the wafer carrier.

[0036] In the embodiment of the present application, before the process starts or during the process, the actual temperature T of the wafer carrier is 实际 is constantly changing, so the actual temperature of the inner zone is T 内实际 and the actual temperature of the outer zone T 外实际 It is also constantly changing, so it is necessary to obtain the actual temperature T of the inner zone measured by the inner zone temperature measurement component in real time. 内实际 and the actual temperature T of the outer zone measured by the outer zone temperature measuring component 外实际 .

[0037] According to the target temperature T of the wafer carrier obtained in step S601 目标 And the real-time inner zone actual temperature T 内实际 and the actual temperature of the outer zone T 外实际 , the outer zone target temperature To, the inner zone heating power P of the inner zone heating component 内 And the external zone heating power P of the external zone heating component 外 At least one of the following is adjusted.

[0038] Furthermore, before the process starts, the temperature of the wafer carrier needs to be controlled so that the temperature of the wafer carrier is gradually increased and the final actual temperature of the wafer carrier is T 实际 Stable at target temperature T 目标 Correspondingly, Figure 7 As shown, the above step S602 of “adjusting at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier” includes the following steps: S701, setting the inner zone target temperature and the outer zone target temperature as the target temperatures of the wafer carrying device respectively.

[0039] In the embodiment of the present application, the inner zone target temperature T 内目标 That is, the target temperature of the inner heating zone. The size of the inner heating zone is larger than the maximum size of the wafer carried by the heater body, and plays a major role in heating the wafer. The target temperature of the inner zone is T 内目标Generally recorded as Ti, also called process temperature. External zone target temperature T 外目标 That is, the target temperature of the external heating zone. The external heating zone is located outside the maximum size of the wafer carried by the heater body and mainly plays a regulating role. The target temperature of the external zone is T 外目标 Generally, it is recorded as To, also known as the adjustment temperature. For example, before the process starts, the target temperature T of the wafer carrier is set. 目标 If the temperature is 200° C., the inner zone target temperature Ti is also set to 200° C., and the outer zone target temperature To is also set to 200° C. Then, step S702 and / or step S703 are executed.

[0040] S702, adjusting the inner zone heating power according to the inner zone actual temperature and the inner zone target temperature, so that the inner zone actual temperature is stabilized at the inner zone target temperature.

[0041] In the embodiment of the present application, the heat generated by the inner zone heating component overcomes the cooling power of the inner cooling zone of the water cooling plate, and heats the inner heating zone of the heater body to the inner zone target temperature Ti. Specifically, according to the set inner zone target temperature Ti (for example, 200°C) and the inner zone actual temperature T 内实际 The real-time changes of the inner zone heating power P 内 A series of adjustments are made to make the actual temperature T 内实际 Stabilize at the inner zone target temperature Ti.

[0042] The specific adjustment process may be as follows: if the actual temperature of the inner zone is lower than the target temperature of the inner zone, the inner zone heating power is increased; if the actual temperature of the inner zone is higher than the target temperature of the inner zone, the inner zone heating power is reduced; and / or, if the actual temperature of the inner zone is equal to the target temperature of the inner zone, the inner zone heating power is kept unchanged.

[0043] For example, in the case of a wafer carrier at 200°C, that is, the target temperature T of the wafer carrier 目标 When the temperature is 200℃, the actual cooling power of the cooling zone in the water cooling disk can be obtained by theoretical calculation or simulation analysis according to the heat conduction formula (1), that is, the actual cooling power of the inner zone P 内实际 =P1, then the actual temperature in the inner zone is T 内实际 When the inner zone target temperature is lower than Ti=200℃, gradually increase the inner zone heating power P 内 , if the actual temperature of the inner zone is T 内实际 If it does not increase, continue to increase the inner zone heating power P 内 Until the actual temperature of the inner zone T 内实际 Start changing and stop increasing the inner zone heating power P 内 (Assume that we stop increasing P 内 Time 内 =N1'*P1, then N1'>1, that is, the inner zone heating power P内 Greater than the actual cooling power P of the inner zone 内实际 = P1), so that the inner heating zone starts to heat up, and finally the inner heating zone is heated to the inner zone target temperature Ti = 200 ° C, that is, the inner zone actual temperature T 内实际 =Ti=200℃. The actual temperature in the inner zone is T 内实际 When the inner zone target temperature Ti=200℃, maintain the inner zone heating power P 内 unchanged, because at this time the inner zone heating power P 内 Greater than the actual cooling power P of the inner zone 内实际 =P1, so that the inner heating zone cannot be stabilized at the current temperature Ti=200℃, that is, the actual temperature of the inner zone T 内实际 will continue to increase, that is, the actual temperature of the inner zone T 内实际 > Inner zone target temperature Ti = 200°C. Inner zone actual temperature T 内实际 > When the inner zone target temperature Ti=200℃, gradually reduce the inner zone heating power P 内 , if the actual temperature of the inner zone is T 内实际 If it does not decrease, continue to reduce the inner zone heating power P 内 Until the actual temperature of the inner zone T 内实际 Start changing Stop reducing the inner zone heating power P 内 (Assuming that the reduction of P 内 Time 内 =N1'*P1, then N1'<1, that is, the inner zone heating power P 内 Less than the actual cooling power P of the inner zone 内实际 = P1), so that the inner heating zone starts to cool down, and finally the inner heating zone cools down to the inner zone target temperature Ti = 200 °C, that is, the inner zone actual temperature T 内实际 =Ti=200℃. The actual temperature in the inner zone is T 内实际 When the inner zone target temperature Ti=200℃, maintain the inner zone heating power P 内 unchanged, because at this time the inner zone heating power P 内 Less than the actual cooling power P of the inner zone 内实际 =P1, so that the inner heating zone cannot be stabilized at the current temperature, that is, the actual temperature of the inner zone T 内实际 will continue to decrease, that is, the actual temperature of the inner zone T 内实际 <Inner zone target temperature Ti = 200°C. Continue in this way, after multiple adjustments (inner zone actual temperature T 内实际 After the inner zone target temperature Ti=200℃ fluctuates for a period of time, the actual temperature of the inner zone T 内实际 Stabilize at the inner zone target temperature Ti=200℃.

[0044] S703, adjusting the outer zone heating power according to the outer zone actual temperature and the outer zone target temperature, so that the outer zone actual temperature is stabilized at the outer zone target temperature.

[0045] In the embodiment of the present application, the heat generated by the external zone heating component overcomes the cooling power of the cooling zone outside the water cooling plate, and heats the external heating zone of the heater body to the external zone target temperature To. Specifically, according to the set external zone target temperature To (for example, 200°C) and the actual temperature T 外实际 The real-time changes of the external zone heating power P 外 A series of adjustments are made to make the actual temperature T 外实际 Stabilize at the outer zone target temperature To.

[0046] The specific adjustment process may be as follows: if the actual temperature of the outer zone is lower than the target temperature of the outer zone, the heating power of the outer zone is increased; if the actual temperature of the outer zone is higher than the target temperature of the outer zone, the heating power of the outer zone is reduced; and / or, if the actual temperature of the outer zone is equal to the target temperature of the outer zone, the heating power of the outer zone is kept unchanged.

[0047] For example, in the case of a wafer carrier at 200°C, that is, the target temperature T of the wafer carrier 目标 When the temperature is 200℃, the actual cooling power of the cooling zone outside the water cooling disk, that is, the actual cooling power of the outer zone, P can be obtained by theoretical calculation or simulation analysis according to the heat conduction formula (1). 外实际 =P2, then the actual temperature in the outer zone is T 外实际 When the temperature is lower than the target temperature of the outer zone To=200℃, gradually increase the outer zone heating power P 外 , if the actual temperature of the outer zone is T 外实际 If it does not increase, continue to increase the outer zone heating power P 外 Until the actual temperature of the outer zone T 外实际 Start changing and stop increasing the outer zone heating power P 外 (Assume that we stop increasing P 外 Time 外 =N2'*P2, then N2'>1, that is, the external zone heating power P 外 Greater than the actual cooling power P of the outer zone 外实际 = P2, so that the external heating zone starts to heat up, and finally the external heating zone is heated to the external zone target temperature To = 200 ° C, that is, the actual temperature of the external zone T 外实际 =To=200℃. The actual temperature in the outer zone is T 外实际 When the target temperature of the outer zone is To=200℃, the outer zone heating power P is maintained. 外 unchanged, because at this time the external zone heating power P 外 Greater than the actual cooling power P of the outer zone 外实际=P2, so that the external heating zone cannot be stabilized at the current temperature To=200℃, that is, the actual temperature of the external zone T 外实际 will continue to increase, that is, the actual temperature of the outer zone T 外实际 >Outer zone target temperature To = 200°C. Actual temperature in outer zone T 外实际 > When the target temperature of the outer zone To = 200°C, gradually reduce the outer zone heating power P 外 , if the actual temperature of the outer zone is T 外实际 If it does not decrease, continue to reduce the outer zone heating power P 外 Until the actual temperature of the outer zone T 外实际 Start changing Stop reducing the outer zone heating power P 外 (Assuming that the reduction of P 外 Time 外 =N2'*P2, then N2'<1, that is, the external zone heating power P 外 Less than the actual cooling power P of the outer zone 外实际 = P2), so that the external heating zone begins to cool down, and finally the external heating zone cools down to the external zone target temperature To = 200 ° C, that is, the actual temperature of the external zone T 外实际 =To=200℃. The actual temperature in the outer zone is T 外实际 When the target temperature of the outer zone is To=200℃, the outer zone heating power P is maintained. 外 unchanged, because at this time the external zone heating power P 外 Less than the actual cooling power P of the outer zone 外实际 =P2, so that the external heating zone cannot be stabilized at the current temperature, that is, the actual temperature of the external zone T 外实际 will continue to decrease, that is, the actual temperature of the outer zone T 外实际 <Outer zone target temperature To=200℃. Continue in this way, after multiple adjustments (outer zone actual temperature T 外实际 After the target temperature of the outer zone To fluctuates around 200℃ for a period of time, the actual temperature of the outer zone T 外实际 Stabilize at the outer zone target temperature To=200℃.

[0048] Furthermore, after the process starts, a large amount of process heat will be generated as the process proceeds. The process heat will drive the wafer to heat up, and the heat of the process heat will be conducted to the inner heating zone of the heater body. The direction of the heat flow depends on the relationship between the inner zone target temperature Ti and the outer zone target temperature To. The principle of heat conduction is that the heat flow flows from a high temperature to a low temperature.

[0049] When Ti>To, such as Figure 8 As shown, part of the process heat flows from the inner heating zone to the outer heating zone and is finally taken away by the outer cooling zone of the water cooling plate, and the other part flows directly from the inner heating zone to the inner cooling zone of the water cooling plate.

[0050] When Ti < To, as shown in Fig. 9 shown, the process heat can only flow from the inner heating zone to the inner cooling zone of the water-cooled disk. Only the inner cooling zone plays a cooling role. Part of the heat generated by the outer zone heating component flows to the outer cooling zone, and the other part flows from the outer heating zone to the inner heating zone and is finally taken away by the inner cooling zone of the water-cooled disk.

[0051] Therefore, after the process starts, the temperature of the wafer carrier device needs to be controlled according to the real-time change of the process heat, so that the actual temperature of the inner zone of the wafer carrier device is stabilized at the inner zone target temperature, and then the temperature of the wafer is ensured to be stable at the process temperature. However, since the specific value of the process heat is difficult to accurately obtain through calculation, the heat of the process heat will be conducted to the inner heating zone of the heater body. Therefore, it can be deduced according to the real-time change of the actual temperature of the inner zone measured by the inner zone temperature measuring component.

[0052] Correspondingly, the "adjusting at least one of the outer zone target temperature, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier device" in step S602 described above includes the following steps: After the process starts, the inner zone target temperature and the outer zone target temperature are still set to the target temperature of the wafer carrier device respectively; according to the actual temperature of the inner zone and the inner zone target temperature, adjust the inner zone heating power, the outer zone target temperature, and the outer zone heating power so that the actual temperature of the inner zone is stabilized at the inner zone target temperature. Different from before the process starts, after the process starts, the actual temperature at this time reflects the relationship among the heating power, the process heat, and the cooling power. For example, when the sum of the heating power and the process heat is greater than the cooling power, the temperature will rise; when the sum of the heating power and the process heat is less than the cooling power, the temperature will drop; and in the case where the process heat cannot be adjusted, the actual temperature is still adjusted by adjusting the heating power of the inner and outer zones, and the adjustment method is the same as that in step S602 described above.

[0053] As shown in Fig.10 shown, the above step "adjusting the inner zone heating power, the outer zone target temperature, and the outer zone heating power according to the actual temperature of the inner zone and the inner zone target temperature so that the actual temperature of the inner zone is stabilized at the inner zone target temperature" may specifically include the following steps: S1001, determine whether the actual temperature of the inner zone is greater than the inner zone target temperature.

[0054] In the embodiment of the present application, the actual temperature of the inner zone and the inner zone target temperature are compared to determine whether the actual temperature of the inner zone is greater than the inner zone target temperature. Then, one of step S1002, step S1003, and S1004 is executed according to the determination result.

[0055] S1002, if the actual temperature of the inner zone is greater than the target temperature of the inner zone, reduce the actual cooling power of the inner zone heating power to reduce the actual temperature of the inner zone to the target temperature of the inner zone; if adjusting the inner zone heating power to zero still cannot reduce the actual temperature of the inner zone to the target temperature of the inner zone, reduce the target temperature of the outer zone, and reduce the outer zone heating power to reduce the actual temperature of the inner zone to the target temperature of the inner zone. Execute step S1004.

[0056] S1003, if the actual temperature of the inner zone is lower than the target temperature of the inner zone, the inner zone heating power is increased if the inner zone heating power is not zero, or the outer zone heating power is increased if the inner zone heating power is zero, so as to increase the actual temperature of the inner zone to the target temperature of the inner zone. Execute step S1004.

[0057] S1004: If the actual temperature of the inner zone is equal to the target temperature of the inner zone, the inner zone heating power and the outer zone heating power are kept unchanged, and the process returns to step S1001 to continue the determination.

[0058] In the embodiment of the present application, assuming that the target temperature of the wafer carrier device is T 200°C, 目标 is 200℃, that is, the target temperature of the inner zone is Ti=200℃, the target temperature of the outer zone is To=200℃, and the actual cooling power of the inner zone of the inner cooling zone is P 内实际 =500W, the actual cooling power of the outer cooling zone P 外实际 =600W, to maintain the wafer carrier at the target temperature, the inner zone heating power P 内 =500W, external zone heating power P 外 =600W.

[0059] When the generated process heat causes the actual temperature of the inner zone to rise instead of being able to stabilize at the inner zone target temperature Ti=200℃, that is, when the actual temperature of the inner zone is greater than the inner zone target temperature Ti=200℃, reduce the inner zone heating power. When the process heat is small (less than the inner zone actual cooling power of 500W), the actual temperature of the inner zone can be reduced to the inner zone target temperature of 200℃ by simply reducing the inner zone heating power. When the process heat is large (equal to or greater than the inner zone actual cooling power of 500W), the actual temperature of the inner zone cannot be reduced to the inner zone target temperature of 200℃ by simply reducing the inner zone heating power, that is, reducing the inner zone heating power to zero, the outer zone target temperature To and the outer zone heating power must also be reduced.

[0060] For example, when the process heat generated is less than the actual cooling power P in the inner zone 内实际=500W, for example, when the process heat = 200W (the process heat cannot be accurately known, and this is just for the convenience of quantitatively describing the size of the process heat), the inner zone heating power needs to be reduced to 500W-200W=300W (because the process heat cannot be accurately known, the value of the inner zone heating power after adjustment is not calculated, but adjusted, and this is just for the convenience of quantitatively describing the size of the inner zone heating power). At this time, the process heat, the inner zone heating power, and the inner zone actual cooling power are in a dynamic equilibrium state, and then the inner zone heating power = 300W is kept unchanged, and the actual temperature of the inner zone of the wafer carrier continues to be maintained at the inner zone target temperature Ti = 200℃. It should be noted here that since the value of the inner zone heating power after adjustment is 300W, which is not calculated, but adjusted multiple times, during the multiple adjustments, the actual temperature of the inner zone will fluctuate around the inner zone target temperature, that is, when the actual temperature of the inner zone is less than the inner zone target temperature, the inner zone heating power is increased; when the actual temperature of the inner zone is equal to the inner zone target temperature, the inner zone heating power is kept unchanged.

[0061] For example, when the process heat generated is equal to the actual cooling power P in the inner zone 内实际 =500W, that is, when the process heat = 500W, the inner zone heating power needs to be reduced to 500W-500W=0W. At this time, the process heat and the actual cooling power of the inner zone are in a dynamic equilibrium state. After that, the inner zone heating power is kept at 0W unchanged, and the actual temperature of the inner zone of the wafer carrier continues to be maintained at the inner zone target temperature Ti=200℃. It should be noted here that since the process heat cannot be accurately known, the value of the inner zone heating power after adjustment, 0W, is not calculated, but adjusted multiple times. Therefore, during the multiple adjustment process, there will be a situation where the inner zone heating power is zero and the actual temperature of the inner zone cannot be reduced to the inner zone target temperature. At this time, the outer zone target temperature and the outer zone heating power need to be adjusted. The specific process is similar to the process when the process heat = 600W described below, and will not be repeated here.

[0062] For example, when the process heat generated is greater than the actual cooling power P in the inner zone 内实际 =500W, for example, when process heat = 600W, the inner zone heating power needs to be reduced to 0W, and the process heat is greater than the actual cooling power P 内实际=500W is 100W more, the wafer carrier will heat up, and the actual temperature of the inner zone of the wafer carrier cannot be maintained at the inner zone target temperature Ti=200℃. In this case, the outer zone target temperature To needs to be lowered by the set temperature, for example, by 10℃ to 190℃, Ti>To, and a part of the process heat flow will flow from the inner heating zone to the outer heating zone, and finally be taken away by the outer cooling zone. The outer zone heating power needs to be reduced to 600W-100W=500W. At this time, the process heat, the outer zone heating power, the inner zone actual cooling power, and the outer zone actual cooling power are in dynamic balance. After that, the inner zone heating power=0W and the outer zone heating power=500W are kept unchanged, and the actual temperature of the inner zone of the wafer carrier is maintained at the inner zone target temperature Ti=200℃. It should be noted here that since the adjusted value of 500W of the outer zone heating power is not calculated but adjusted multiple times, during the multiple adjustments, the actual temperature of the inner zone will fluctuate around the inner zone target temperature. That is, when the actual temperature of the inner zone is lower than the inner zone target temperature, the outer zone heating power is increased; when the actual temperature of the inner zone is equal to the inner zone target temperature, the inner zone heating power and the outer zone heating power are kept unchanged.

[0063] In addition, after the process starts, if it is determined that the wafer temperature uniformity needs to be adjusted based on the temperature measurement component on the wafer surface or the process results, for example, the temperature of the outer heating zone needs to be increased, the inner zone target temperature Ti is set to be less than the outer zone target temperature To. Specifically, the inner zone target temperature Ti is set to be the target temperature T of the wafer carrier. 目标 , the outer zone target temperature To is set as the target temperature T of the wafer carrier 目标 and the set temperature, wherein the set temperature is not equal to 0°C. When the temperature of the external heating zone needs to be increased, the set temperature is greater than 0°C, and the set temperature can be set to, for example, 10°C; when the temperature of the external heating zone needs to be lowered, the set temperature is less than 0°C, and the set temperature can be set to, for example, -10°C.

[0064] Since the target temperature Ti of the inner zone has not changed after the process starts, the heating power of the inner zone remains unchanged and does not need to be adjusted. Only the heating power of the outer zone is adjusted: the heating power of the outer zone is adjusted according to the actual temperature and the target temperature to stabilize the actual temperature of the outer zone at the target temperature of the outer zone. For the specific process, please refer to the relevant content in the above embodiment, which will not be repeated here.

[0065] In summary, the temperature control method of the wafer carrier device of the embodiment of the present application divides the cooling method of the heater body by the water cooling plate into two zones, the outer cooling zone is cooled by solid heat conduction, and the inner cooling zone is cooled by air heat conduction and heat radiation, and the cooling capacity of the inner and outer zones is adjusted by adjusting the width and height of the annular protrusion structure of the water cooling plate. The two cooling methods enable the device to have strong cooling capacity in both high-temperature and low-temperature conditions, and can take into account both high and low temperature conditions. By setting an inner heating zone and an outer heating zone corresponding to the inner cooling zone and the outer cooling zone respectively, and by adjusting the target heating temperatures of the inner and outer heating zones, the direction of the process heat flow can be adjusted in real time, and the cooling capacity can be adjusted online to meet the needs of various working conditions.

[0066] The present application also provides a semiconductor process equipment. Figure 2 As shown, the semiconductor process equipment of the embodiment of the present application includes: a process chamber 8, a temperature controller and a wafer carrier as shown in any of the above embodiments, the temperature controller includes at least one processor and at least one memory, the memory stores a computer program, and when the computer program is executed by the processor, the steps of the temperature control method embodiment of any of the above wafer carriers are implemented.

[0067] The semiconductor process equipment of the embodiment of the present application divides the cooling method of the water cooling plate to the heater body into two zones, the outer zone is cooled by solid heat conduction, and the inner zone is cooled by air heat conduction and heat radiation. The width and height of the annular protrusion structure of the water cooling plate are adjusted to adjust the cooling capacity of the inner and outer zones. The two cooling methods enable the equipment to have strong cooling capacity in both high-temperature and low-temperature conditions, and can take into account both high and low temperature conditions. By setting the inner heating zone and the outer heating zone corresponding to the inner cooling zone and the outer cooling zone respectively, and by adjusting the target heating temperatures of the inner and outer heating zones, the direction of the process heat flow can be adjusted in real time, and the cooling capacity can be adjusted online to meet the needs of various working conditions.

[0068] An embodiment of the present application also proposes a readable storage medium, on which one or more computer programs are stored. The one or more computer programs include instructions. When the program or instructions are executed by a processor in a semiconductor process equipment including multiple application programs, the processor in the semiconductor process equipment can execute the various processes of the above-mentioned temperature control method embodiment of the wafer carrier device, and is specifically used to execute the steps of any of the above-mentioned temperature control method embodiments of the wafer carrier device.

[0069] The readable storage medium of the embodiment of the present application divides the cooling method of the water cooling plate to the heater body into two zones, the outer zone is cooled by solid heat conduction, and the inner zone is cooled by air heat conduction and heat radiation. The width and height of the annular protrusion structure of the water cooling plate are adjusted to adjust the cooling capacity of the inner and outer zones. The two cooling methods enable the heater to have strong cooling capacity in both high-temperature and low-temperature conditions, and can take into account both high and low temperature conditions. By setting the inner heating zone and the outer heating zone corresponding to the inner cooling zone and the outer cooling zone respectively, and by adjusting the target heating temperatures of the inner and outer heating zones, the direction of the process heat flow can be adjusted in real time, and the cooling capacity can be adjusted online to meet the needs of various working conditions.

[0070] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0071] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0072] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0073] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0074] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0075] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0076] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0077] Memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. Memory is an example of a computer-readable medium.

[0078] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined in this article, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0079] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0080] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0081] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0082] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A wafer carrying device, characterized in that: include: A heating assembly, the heating assembly comprising a heater body, the heater body comprising an inner heating zone and an outer heating zone, the outer heating zone being located outside the inner heating zone in a radial direction, the inner heating zone being provided with an inner zone heating component and an inner zone temperature measuring component, the outer heating zone being provided with an outer zone heating component and an outer zone temperature measuring component; A water-cooling plate, wherein an annular protrusion structure is provided on the edge of the water-cooling plate, wherein the water-cooling plate is sealed and connected to the heater body via the annular protrusion structure, wherein the width and height of the annular protrusion structure are set according to the required operating temperature of the wafer carrier device, wherein the inner portion of the annular protrusion structure is an inner cooling zone, wherein the annular protrusion structure is an outer cooling zone, and wherein there is a gap between the inner cooling zone and the heater body.

2. The wafer carrier device according to claim 1, characterized in that: Also includes: A main shaft is installed, and the main shaft is connected to the lower wall of the process chamber and the water cooling plate respectively, and is used to support the heater body and the water cooling plate.

3. The wafer carrier device according to claim 1, characterized in that: The annular protrusion structure at least partially overlaps with the outer zone heating component in the radial direction of the water cooling plate.

4. The wafer carrier device according to claim 1, characterized in that: The outer zone heating component is closer to the water cooling plate in a vertical direction than the inner zone heating component.

5. The wafer carrier device according to claim 1, characterized in that: The water cooling plate is provided with a cooling water channel and an inlet and outlet water pipe, and the cooling water channel is connected to the cooling system outside the process chamber through the inlet and outlet water pipe; The inner zone heating component, the inner zone temperature measuring component, the outer zone heating component, and the outer zone temperature measuring component are connected to a heating power source outside the process chamber.

6. The wafer carrier device according to claim 1, characterized in that: The size of the inner heating zone is larger than the maximum size of the wafer required to be carried on the heater body.

7. The wafer carrying device according to claim 5, characterized in that: Also includes: A temperature controller is arranged in the heating power supply, and the temperature controller is used to adjust at least one of the outer zone target temperature, the inner zone heating power of the inner zone heating component and the outer zone heating power of the outer zone heating component according to the inner zone actual temperature measured by the inner zone temperature measuring component, the outer zone actual temperature measured by the outer zone temperature measuring component and the target temperature of the wafer carrier.

8. A temperature control method for a wafer carrier, characterized in that: Applied to the wafer carrier device according to any one of claims 1 to 7, the method comprises: Obtaining a target temperature of the wafer carrier; The actual temperature of the inner zone measured by the inner zone temperature measuring component and the actual temperature of the outer zone measured by the outer zone temperature measuring component are obtained in real time, and at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component and the outer zone heating power of the outer zone heating component is adjusted according to the actual temperature of the inner zone, the actual temperature of the outer zone and the target temperature of the wafer carrier.

9. The method according to claim 8, characterized in that The step of adjusting at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier comprises: Before the process starts, the inner zone target temperature and the outer zone target temperature are respectively set as the target temperatures of the wafer carrying device; According to the inner zone actual temperature and the inner zone target temperature, the inner zone heating power is adjusted so that the inner zone actual temperature is stabilized at the inner zone target temperature; and / or, The outer zone heating power is adjusted according to the outer zone actual temperature and the outer zone target temperature so that the outer zone actual temperature is stabilized at the outer zone target temperature.

10. The method according to claim 9, characterized in that The step of adjusting the inner zone heating power according to the inner zone actual temperature and the inner zone target temperature so as to stabilize the inner zone actual temperature at the inner zone target temperature comprises: If the actual temperature of the inner zone is lower than the target temperature of the inner zone, increasing the heating power of the inner zone; and / or, If the actual temperature of the inner zone is greater than the target temperature of the inner zone, reducing the inner zone heating power; and / or, If the actual temperature of the inner zone is equal to the target temperature of the inner zone, the heating power of the inner zone is kept unchanged.

11. The method according to claim 9 or 10, characterized in that: The step of adjusting the outer zone heating power according to the outer zone actual temperature and the outer zone target temperature so as to stabilize the outer zone actual temperature at the outer zone target temperature comprises: If the actual temperature of the outer zone is lower than the target temperature of the outer zone, increasing the heating power of the outer zone; and / or, If the actual temperature of the outer zone is greater than the target temperature of the outer zone, reducing the heating power of the outer zone; and / or, If the actual temperature of the outer zone is equal to the target temperature of the outer zone, the heating power of the outer zone is kept unchanged.

12. The method according to claim 8 or 9, characterized in that: The step of adjusting at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier comprises: After the process starts, the inner zone target temperature and the outer zone target temperature are respectively set as the target temperatures of the wafer carrying device; The inner zone heating power, the outer zone target temperature and the outer zone heating power are adjusted according to the inner zone actual temperature and the inner zone target temperature to stabilize the inner zone actual temperature at the inner zone target temperature.

13. The method according to claim 12, characterized in that The adjusting the inner zone heating power, the outer zone target temperature and the outer zone heating power according to the inner zone actual temperature and the inner zone target temperature comprises: If the actual temperature of the inner zone is greater than the target temperature of the inner zone, the inner zone heating power is reduced to lower the actual temperature of the inner zone to the target temperature of the inner zone; wherein, if adjusting the inner zone heating power to zero still cannot lower the actual temperature of the inner zone to the target temperature of the inner zone, then lower the target temperature of the outer zone, and reduce the outer zone heating power to lower the actual temperature of the inner zone to the target temperature of the inner zone.

14. The method according to claim 8 or 9, characterized in that Also includes: After the process starts, if it is determined that the wafer temperature uniformity needs to be adjusted according to the temperature measurement component on the wafer surface or the process result, the inner zone target temperature is set as the target temperature of the wafer carrier, and the outer zone target temperature is set as the sum of the target temperature of the wafer carrier and the set temperature, and the set temperature is not equal to 0°C; The outer zone heating power is adjusted according to the outer zone actual temperature and the outer zone target temperature so that the outer zone actual temperature is stabilized at the outer zone target temperature.

15. A semiconductor process equipment, characterized in that: include: A process chamber, a temperature controller and a wafer carrier, wherein the temperature controller comprises at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the steps of the method as described in any one of claims 8 to 14 are implemented.

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