Bearing device and semiconductor process apparatus

Abstract

The present application provides a bearing device and a semiconductor process apparatus. In the device, a second gas uniformizing channel group surrounds the periphery of an annular channel; a plurality of first connecting channels are located in the space defined by the annular channel; one end of each first connecting channel serves as a gas inlet, and the other end of each first connecting channel is communicated with the annular channel; the annular channel is communicated with a second gas uniformizing channel group by means of a plurality of second connecting channels; and the plurality of second connecting channels are spaced apart in the circumferential direction of the annular channel. The present solution can effectively improve the circumferential distribution uniformity of purge gas blown out towards the edge part of a wafer, so that the process uniformity can be improved.

Description

Carriers and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a carrier device and semiconductor process equipment. Background Art

[0002] Atomic layer deposition (ALD) and chemical vapor deposition (CVD) equipment are widely used in today's integrated circuit semiconductor manufacturing processes. To prevent side and back plating on wafers, the wafer carrier (such as a susceptor) is equipped with an edge purge function to remove reactive gases from the back and sides of the wafer, thereby preventing side and back plating.

[0003] As shown in FIG1 , the purge channel structure in the existing carrier device is to guide the purge gas to the buffer cavity 2 at the edge of the chuck through multiple horizontal straight channels 1, and then guide the purge gas to the edge of the wafer through the corresponding channels so that the purge gas can be blown toward the back and side of the wafer. FIG1 only shows the horizontal straight channels 1 and the buffer cavity 2. However, due to the limited number of horizontal straight channels 1 arranged in the circumferential direction, the uniformity of the airflow distribution in the circumferential direction is poor, and the horizontal straight channels 1 are easily affected by fluctuations in the pressure or flow of the gas source, which also causes poor airflow uniformity. In addition, when materials such as solder on the chuck flow into the horizontal straight channel 1, the channel width or depth will be reduced, resulting in problems such as increased channel air resistance and differences in air resistance between different channels, thereby causing uneven airflow distribution in the buffer cavity 2 at the edge of the chuck, and ultimately resulting in poor circumferential distribution uniformity of the purge gas blown toward the edge of the wafer.

[0004] Summary of the Invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a carrier device and semiconductor process equipment, which can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge portion of the wafer, thereby improving the process uniformity.

[0006] To achieve the objectives of the present application, a carrier device is provided, comprising a carrier surface for carrying wafers, wherein the carrier device is provided with a purge channel structure for conveying a purge gas, wherein the purge channel structure comprises a first gas uniformity channel group and a second gas uniformity channel group that are interconnected, wherein the first gas uniformity channel group has an air inlet for connecting to a gas source, and the second gas uniformity channel group has an air outlet for blowing the purge gas toward an edge portion of a wafer placed on the carrier surface;

[0007] The first gas uniformity channel group includes at least one annular channel, a plurality of first connecting channels and a plurality of second connecting channels, and the second gas uniformity channel group surrounds the periphery of the annular channel;

[0008] The plurality of first connecting channels are all located in the space enclosed by the annular channel, one end of each of the first connecting channels serves as the air inlet, and the other end is communicated with the annular channel;

[0009] The annular channel is connected to the second gas uniforming channel group via a plurality of second connecting channels; and the plurality of second connecting channels are arranged at intervals along the circumference of the annular channel.

[0010] In some embodiments, the annular channels are multiple and nested with each other and spaced apart;

[0011] Each adjacent two annular channels, as well as the outermost annular channel and the second gas uniforming channel group, are connected via a plurality of second connecting channels; and the plurality of second connecting channels located on the same circumference are spaced apart along the circumference, while the second connecting channels located on different circumferences are staggered with each other;

[0012] The plurality of first connecting channels are all located in the space enclosed by the innermost annular channel, and the other end of the first connecting channel is connected to the innermost annular channel; the second gas uniformity channel group surrounds the periphery of the outermost annular channel.

[0013] In some embodiments, the plurality of second connecting channels are evenly distributed along the circumference of the annular channel.

[0014] In some embodiments, the radial width of the innermost annular channel is greater than the radial widths of the other annular channels;

[0015] The width of each of the second connecting channels communicating with the innermost annular channel is greater than the width of each of the second connecting channels on other different circumferences.

[0016] In some embodiments, radial widths of the annular channels except the innermost annular channel are the same or decrease from the inside to the outside.

[0017] In some embodiments, radial widths of the second connecting channels on different circumferences except for the second connecting channels connected to the innermost annular channel are the same or decrease from the inside to the outside.

[0018] In some embodiments, the first connecting channel and the second connecting channel are both arranged to extend radially along the bearing surface;

[0019] The position where each of the first connecting channels communicates with the innermost annular channel is located in the middle between two adjacent second connecting channels that communicate with the annular channel.

[0020] In some embodiments, the position where the second connecting channel on each circumference communicates with the annular channel adjacent to the outside is located in the middle position between two adjacent second connecting channels on the adjacent circumferences of the outside.

[0021] In some embodiments, the second gas uniformity channel group includes a first buffer cavity, a plurality of first pressure holding channels, a second buffer cavity and a plurality of second pressure holding channels, wherein:

[0022] The first buffer chamber is annular and surrounds the outer periphery of the outermost annular channel, and is connected to the outermost annular channel through a plurality of second connecting channels;

[0023] The second buffer chamber is annular and is spaced apart and arranged above the first buffer chamber, and the second buffer chamber is connected to the first buffer chamber through a plurality of the first pressure-holding channels;

[0024] One ends of the plurality of second pressure-holding channels are all communicated with the second buffer chamber, and the other ends of the plurality of second pressure-holding channels are all used as the air outlets.

[0025] In some embodiments, the volume of the first buffer cavity is less than or equal to the volume of the second buffer cavity.

[0026] In some embodiments, the plurality of first pressure-holding channels include a plurality of vertically arranged first through holes and a plurality of vertically arranged second through holes, wherein each of the second connecting channels communicating with the first buffer chamber is provided with one first through hole on both sides;

[0027] A second through hole is provided on both sides of each second connecting channel communicating with the first buffer cavity, and the second through hole is located on a side of the first through hole on the same side thereof away from the second connecting channel.

[0028] In some embodiments, the carrier device includes a carrier body and an edge ring, wherein the carrier body has the carrier surface, and the diameter of the carrier surface is smaller than the diameter of the wafer, so that the edge of the wafer can be located outside the carrier surface; the top of the outer peripheral surface of the carrier body is formed with a first annular step portion,

[0029] The edge ring includes an annular body, and a first annular flange is provided on the inner circumference of the annular body. The first annular flange is spaced above the first annular step, and at least a portion of the first annular flange is located below the wafer. The second pressure holding channel is formed between the lower surface and the inner circumference of the first annular flange, the upper surface of the first annular step, and the outer circumference of the supporting body respectively.

[0030] A second annular step portion is formed on the outer circumferential surface of the bearing body and is located below the first annular step portion, and a second annular flange is formed on the inner circumferential surface of the annular body and is located below the first annular flange. At least a portion of the second annular flange is superimposed on the second annular step portion, and the second buffer cavity is formed between the inner circumferential surface of the second annular flange, the outer circumferential surface of the first annular step portion, the upper surface of the second annular step portion and the lower surface of the first annular flange.

[0031] In some embodiments, the carrier body includes a top plate and a bottom plate stacked on a lower surface of the top plate, wherein a plurality of the annular channels, a plurality of the first connecting channels, a plurality of the second connecting channels, and the first buffer cavity are formed between the upper surface of the bottom plate and the lower surface of the top plate;

[0032] A plurality of first pressure-holding channels are formed through the top plate, and an outlet end of each of the first pressure-holding channels is located on the upper surface of the second annular step portion;

[0033] A plurality of air inlet holes are provided through the bottom plate, one end of the plurality of air inlet holes is connected to the plurality of air inlets in a one-to-one correspondence, and the other end of the plurality of air inlet holes is used to connect to the air source.

[0034] As another technical solution, the present application further provides a semiconductor process equipment, including a process chamber and a carrier device arranged in the process chamber, wherein the carrier device adopts the above-mentioned carrier device provided in the present application.

[0035] This application has the following beneficial effects:

[0036] The carrier device provided by the present application is such that when the purge gas enters from the air inlet of the first uniform gas channel group, it first flows into the annular channel from multiple first connecting channels. Since multiple first connecting channels are provided, the purge gas can be divided into multiple paths from the air inlet and simultaneously flow into the annular channel at multiple different positions on its circumference through multiple first connecting channels, so that the purge gas can be quickly spread out in the circumference of the annular channel, achieving uniform distribution in the circumference, thereby improving the uniform gas effect. Then, the purge gas in the annular channel flows into the outermost second uniform gas channel group through each second connecting channel connected to the annular channel, and is transported by the second uniform gas channel group, and finally blown out from its outlet toward the edge of the wafer placed on the carrier surface, thereby achieving purging of the back and sides of the wafer. When the purge gas flows into the annular channel from each first connecting channel, it can diffuse rapidly in the annular channel to achieve uniform distribution in the circumferential direction, thereby solving the problem of uneven airflow distribution in the circumferential direction caused by using a straight channel to directly transport the purge gas to the outermost channel in the prior art. Moreover, the air resistance of the annular channel is smaller than that of the straight channel, and it is not easily affected when the gas source pressure or flow fluctuates. In turn, it can effectively improve the uniformity of the circumferential distribution of the purge gas blown toward the edge of the wafer, thereby improving the process uniformity.

[0037] The semiconductor process equipment provided in the present application can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge portion of the wafer by adopting the above-mentioned supporting device provided in the present application, thereby improving the process uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] FIG1 is a structural diagram of a horizontal straight channel and a buffer cavity in a carrying device used in the related art;

[0039] FIG2 is a cross-sectional view of a carrying device provided in an embodiment of the present application;

[0040] FIG3A is a partial enlarged view of the carrying device in FIG2 ;

[0041] FIG3B is a partial enlarged view of the carrying device in FIG2 ;

[0042] FIG4 is a top view of a first gas uniformity channel group in a purge channel structure provided in an embodiment of the present application;

[0043] FIG5 is a graph showing a relationship between gas flow rate and chuck diameter of a carrier device provided in the related art;

[0044] FIG6 is a graph showing the relationship between the gas flow rate and the chuck diameter of the carrier device provided in an embodiment of the present application.

[0045] FIG7 is a comparison diagram of the curve shown in FIG5 and the curve shown in FIG6. DETAILED DESCRIPTION

[0046] In order to enable those skilled in the art to better understand the technical solution of the present application, the carrier device and semiconductor process equipment provided by the present application are described in detail below with reference to the accompanying drawings.

[0047] Please refer to Figures 2 to 4 together. An embodiment of the present application provides a carrying device, including a carrying surface for carrying a wafer 4, and a purge channel structure for conveying a purge gas is provided in the carrying device, and the purge channel structure includes a first gas uniformity channel group and a second gas uniformity channel group that are interconnected, and the first gas uniformity channel group has an air inlet for connecting to a gas source, and the first gas uniformity channel group is used to convey the purge gas from the gas source to the second gas uniformity channel group, and at the same time, uniformize the purge gas; the second gas uniformity channel group has an outlet 94a for blowing out the purge gas toward the edge portion 4a of the wafer 4 placed on the carrying surface, and the second gas uniformity channel group is used to convey the purge gas uniformed by the first gas uniformity channel group to the edge of the wafer 4 on the carrying surface, and at the same time, further uniformize the purge gas, and finally blow it out from its outlet 94a toward the edge portion placed on the wafer 4, so as to achieve purge of the back and sides of the wafer 4.

[0048] Specifically, the above-mentioned first uniform air channel group includes at least one annular channel 82, multiple first connecting channels 81 and multiple second connecting channels 83, wherein, taking the annular channel 82 as an example, the multiple annular channels 82 are nested and spaced apart from each other, for example, the multiple annular channels 82 are all arranged concentrically with the center of the bearing surface; the second uniform air channel group (the first buffer cavity 91 in the second uniform air channel group is shown in Figure 4 and described in detail later) surrounds the periphery of the outermost annular channel 82; the multiple first connecting channels 81 are all located in the space surrounded by the innermost annular channel 82a, preferably, the multiple first connecting channels 81 are symmetrically distributed relative to the axis of the bearing surface, for example, symmetrically distributed relative to the center of the bearing surface, one end of each first connecting channel 81 is used as an air inlet 81a, and the other end is connected to the innermost annular channel 82a; between each adjacent two annular channels 82, and between the outermost annular channel 82 and the second uniform air channel group (i.e., the first buffer cavity 91) are connected through multiple second connecting channels 83. Multiple second connecting channels 83 located between the outermost annular channel 82 and the second uniform air channel group (i.e., the first buffer chamber 91) are arranged at circumferential intervals along the bearing surface; multiple second connecting channels 83 between each two adjacent annular channels 82 are arranged at circumferential intervals along the annular channel 82.

[0049] The purge gas provided by the gas source can enter each first connecting channel 81 through the air inlet 81a, and then be transported to the innermost annular channel 82a through each first connecting channel 81, thereby completing the first gas homogenization process. Since multiple first connecting channels 81 are provided, this can make the purge gas be divided into multiple paths from the air inlet 81a, and simultaneously flow into the innermost annular channel 82a at multiple different positions on its circumference through multiple first connecting channels 81, so that the purge gas can be quickly spread in the circumference of the innermost annular channel 82a, achieving uniform distribution in the circumferential direction, thereby improving the gas homogenization effect. Preferably, by symmetrically distributing the multiple first connecting channels 81 relative to the axis of the bearing surface, the uniformity of the circumferential distribution of the purge gas can be further improved, thereby improving the gas homogenization effect.

[0050] Then, the purge gas flows into the outer adjacent annular channel 82b through each second connecting channel 83a connected to the innermost annular channel 82a. After the purge gas is evenly spread out in the circumferential direction by the annular channel 82b, it flows into the next adjacent annular channel 82b through each corresponding second connecting channel 83b, and so on, until it flows into the outermost second uniform gas channel group (i.e., the first buffer chamber 91), thereby completing the second uniform gas process. The above-mentioned first uniform gas channel group can transport the purge gas from the center of the bearing surface to the edge so that it can be transported to the outermost second uniform gas channel group. In addition, by adopting multiple first connecting channels 81, the purge gas can be transported in different directions from the center position near the bearing surface, and then through multiple annular channels 82 and multiple second connecting channels 83 connected to them, the purge gas can finally be transported to different positions in the circumferential direction of the second uniform gas channel group, thereby not only shortening the path of the purge gas and increasing the flow rate of the purge gas, but also further improving the uniformity of the purge gas.

[0051] Since the multiple annular channels 82 are interconnected, when the purge gas flows from each first connecting channel 81 or each second connecting channel 83 into the corresponding annular channel 82, it can quickly diffuse in the annular channel 82 to achieve uniform distribution in the circumferential direction, thereby solving the problem of uneven airflow distribution in the circumferential direction caused by using a straight channel to directly transport the purge gas to the outermost channel in the prior art. Moreover, the air resistance of the multiple interconnected annular channels 82 is smaller than that of the straight channel, and is not easily affected when the gas source pressure or flow fluctuates. This can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge of the wafer, thereby improving the process uniformity.

[0052] It is easy to understand that the more annular channels 82 there are, the more times the purge gas is homogenized, and the more evenly the purge gas is distributed in the circumferential direction. In actual applications, the number of annular channels 82 can be set according to specific needs. Of course, under the premise of meeting specific needs, the number of annular channels 82 can also be one. In this case, the annular channel 82 is, for example, arranged along the circumference of the bearing surface; the second homogenizing channel group surrounds the outer periphery of the annular channel 82; a plurality of first connecting channels 81 are located in the space enclosed by the annular channel 82; the annular channel 82 and the second homogenizing channel group (i.e., the first buffer chamber 91) are connected through a plurality of second connecting channels 83. The purge gas provided by the gas source can enter each first connecting channel 81 through the air inlet 81a, and then be transported to the annular channel 82 through each first connecting channel 81, thereby completing the first homogenizing process.

[0053] In some embodiments, taking multiple annular channels 82 as an example, multiple second connecting channels 83 located on the same circumference are spaced apart along the circumference of the annular channel 82, and second connecting channels 83 located on different circumferences are staggered. By staggering the second connecting channels 83 located on different circumferences, the gas uniformity effect can be improved, ensuring that the purge gas can evenly reach the second gas uniformity channel group.

[0054] Furthermore, in some embodiments, the plurality of second connecting channels 83 located on the same circumference are evenly distributed along the circumference of the annular channel 82 , which can further improve the distribution uniformity of the purge gas in the circumferential direction.

[0055] In some embodiments, the radial width of the innermost annular channel 82a is greater than the radial widths of the other annular channels 82b; the widths of the second connecting channels 83a connected to the innermost annular channel 82a are greater than the widths of the second connecting channels on other different circumferences (e.g., second connecting channels 83b, 83c). Since the radial width of the innermost annular channel 82a is larger, its air resistance is smaller, and thus the innermost annular channel 82a can be used to quickly spread the purge gas in the circumferential direction, achieving uniform distribution in the circumferential direction, and is not easily affected by fluctuations in the gas source pressure or flow rate; on this basis, since the widths of the other annular channels 82b except the innermost annular channel 82a are smaller and the air resistance is larger, an effective gas uniformity effect can be achieved, ensuring that the purge gas can evenly reach the second gas uniformity channel group. Of course, in actual applications, according to specific needs, the radial width of the innermost annular channel 82a can also be equal to the radial widths of the other annular channels 82b. In addition, the width of each second connecting channel 83a communicating with the innermost annular channel 82a may also be equal to the width of each second connecting channel on other different circumferences (for example, the second connecting channels 83b and 83c).

[0056] Furthermore, in some embodiments, the radial widths of the annular channels 82b other than the innermost annular channel 82a are the same or decrease from the inside out. This can also achieve the aforementioned effect. Furthermore, in some embodiments, the widths of the second connecting channels (e.g., second connecting channels 83b and 83c) on different circumferences other than the second connecting channels 83a connected to the innermost annular channel 82a are the same or decrease from the inside out. This can also achieve the aforementioned effect. In this embodiment, the radial width of the innermost annular channel 82a is the largest relative to the radial widths of the other annular channels 82b. However, the present application is not limited to this. In actual applications, there can be multiple annular channels 82 with the largest radial width, i.e., at least one annular channel 82 near the center of the bearing surface has a larger radial width than the other annular channels 82. The number of annular channels 82 with the largest radial width can be set according to specific needs. Alternatively, if there is only one annular channel 82, the radial width of that annular channel 82 can be greater than the widths of the second connecting channels. This can also achieve the aforementioned effect.

[0057] In addition, in some embodiments, the width of the first connecting channel 81 is the same as the radial width of the innermost annular channel 82a, or the width of multiple first connecting channels 81 is greater than the radial width of the innermost annular channel 82a, which can also achieve the above effect.

[0058] In some embodiments, both the first connecting channel 81 and the second connecting channel 83 extend radially along the bearing surface. Furthermore, in some embodiments, the location where each first connecting channel 81 communicates with the innermost annular channel 82 is located midway between two adjacent second connecting channels 83 communicating with that annular channel 82. This allows the purge gas flowing out of the first connecting channel 81 to travel the same distance to reach the two closest second connecting channels 83, further improving gas distribution uniformity.

[0059] In some embodiments, the location where each circumferential second connecting channel 83 communicates with the outer adjacent annular channel 82 is located midway between two adjacent second connecting channels 83 on the outer adjacent circumference. In this way, the purge gas flowing out of each second connecting channel 83 can travel the same distance to reach the two nearest second connecting channels 83 on the outer adjacent circumference, thereby further improving gas distribution uniformity.

[0060] In some embodiments, the second uniform air channel group includes a first buffer chamber 91, multiple first pressure-holding channels 92, a second buffer chamber 93 and multiple second pressure-holding channels 94, wherein the first buffer chamber 91 is annular and surrounds the periphery of the outermost annular channel 82, and is connected to the outermost annular channel 82 through multiple second connecting channels 83c; the second buffer chamber 93 is annular and is arranged at intervals above the first buffer chamber 91, and the second buffer chamber 93 is connected to the first buffer chamber 91 through multiple first pressure-holding channels 92; one end of the multiple second pressure-holding channels 94 are all connected to the second buffer chamber 93, and the other end of the multiple second pressure-holding channels 94 are all used as the above-mentioned air outlet 94a.

[0061] The purge gas in the outermost annular channel 82 flows into the first buffer chamber 91 through each second connecting channel 83c for a primary uniform flow; then flows into the second buffer chamber 93 through each first pressure-holding channel 92 for a secondary uniform flow; finally, the purge gas is blown out through the outlet 94a of each second pressure-holding channel 94 toward the edge portion 4a of the wafer 4 placed on the support surface. Because the purge gas undergoes a secondary uniform flow through the two buffer chambers, and the first pressure-holding channel 92 and the second pressure-holding channel 94 can respectively pressurize the purge gas output through the first buffer chamber 91 and the second buffer chamber 93, the blown purge gas becomes more uniform, thereby further improving the uniformity of the purge at the edge of the wafer 4, further improving the process uniformity of the wafer 4, and improving the process yield.

[0062] In some embodiments, the volume of the first buffer chamber 91 is less than or equal to the volume of the second buffer chamber 93. The top plate 31 in the bearing surface (described in detail later) is usually made of ceramic material. When the first buffer chamber 91 is formed on the top plate 31, by adopting a first buffer chamber 91 with a smaller volume, it is more convenient to process the ceramic, so that the ceramic is not easy to break during the hot pressing and sintering process, thereby improving the product yield. It should be noted that the present application achieves uniform distribution of the purge gas in the circumferential direction by utilizing the annular channel 82 and each second connecting channel 83. Even if a smaller volume of the first buffer chamber 91 is used, a better gas uniformity effect can be guaranteed.

[0063] In some embodiments, as shown in FIG4 , the plurality of first pressure-holding channels 92 include a plurality of vertically arranged first through holes 92a and a plurality of vertically arranged second through holes 92b, wherein a first through hole 92a is provided on both sides of each second connecting channel 83c connected to the first buffer chamber 91, and preferably, the two first through holes 92a on both sides of the second connecting channel 83c are symmetrically distributed relative to the second connecting channel 83c; a second through hole 92b is provided on both sides of each second connecting channel 83c connected to the first buffer chamber 91, and preferably, the two second through holes 92b on both sides of the second connecting channel 83c are symmetrically distributed relative to the second connecting channel 83c; and the second through hole 92b is located on the side of the first through hole 92a on the same side as the second connecting channel 83c, away from the second connecting channel 83c. In this way, the purge gas flowing out of each second connecting channel 83c can travel the same distance to reach the two nearest first through holes 92a, and then diffuse to the two nearest second through holes 92b over the same distance, thereby further improving the uniformity of gas distribution. Of course, in actual applications, the second through holes 92b may be omitted based on specific needs, i.e., only one first through hole 92a may be provided on both sides of each second connecting channel 83 communicating with the first buffer cavity 91; alternatively, two or more second through holes 92b may be provided on both sides of each second connecting channel 83 communicating with the first buffer cavity 91. This embodiment of the present application is not particularly limited in this regard. Furthermore, in some embodiments, multiple first through holes 92a and multiple second through holes 92b are equidistantly spaced in the circumferential direction.

[0064] In some embodiments, the carrier device includes a carrier body 3 and an edge ring 33. The carrier body 3 has the aforementioned carrier surface, and the diameter of the carrier surface is smaller than the diameter of the wafer 4, so that the edge portion 4a of the wafer 4 can be located outside the carrier surface. As shown in Figures 3A and 3B, a first annular step 311 is formed at the top of the outer circumference of the carrier body 3. The edge ring 33 includes an annular body 331, and a first annular flange 332 is provided on the inner circumference of the annular body 331. The first annular flange 332 is spaced above the first annular step 311, and at least a portion of the first annular flange 332 is located below the wafer 4. The lower surface and inner circumference of the first annular flange 332 respectively form the aforementioned second pressure holding channel 94 with the upper surface of the first annular step 311 and the outer circumference of the top plate 31. Furthermore, in some embodiments, an annular groove is provided at the inner peripheral edge of the upper surface of the first annular flange 332, and the bottom surface of the annular groove is opposite to the edge area of ​​the back side of the wafer 4, and there is a gap between the bottom surface of the annular groove and the edge area of ​​the back side of the wafer 4 to constitute a part of the above-mentioned gas outlet 94a, so that the purge gas can be blown out, and the annular side surface of the annular groove surrounds the wafer 4 to limit the position of the wafer 4.

[0065] A second annular step portion 312 is formed on the outer circumferential surface of the supporting body 3 and is located below the first annular step portion 311. A second annular flange 333 is formed on the inner circumferential surface of the annular body 331 and is located below the first annular flange 332. At least a portion of the second annular flange 333 is superimposed on the second annular step portion 312, and the inner circumferential surface of the second annular flange 333, the outer circumferential surface of the first annular step portion 311, the upper surface of the second annular step portion 312 and the lower surface of the first annular flange 332 constitute the above-mentioned second buffer chamber 93.

[0066] In some embodiments, the carrier body 3 includes a top plate 31 and a bottom plate 32, wherein the bottom plate 32 is superimposed on the lower surface of the top plate 31; and a plurality of annular channels 82, a plurality of first connecting channels 81, a plurality of second connecting channels 83, and a first buffer cavity 91 are formed between the upper surface of the bottom plate 32 and the lower surface of the top plate 31. Furthermore, in some embodiments, corresponding recessed channels may be formed on at least one of the upper surface of the bottom plate 32 and the lower surface of the top plate 31. For example, a corresponding recessed channel may be formed on the upper surface of the bottom plate 32, and the recessed channel and the lower surface of the top plate 31 together form the plurality of annular channels 82, the plurality of first connecting channels 81, the plurality of second connecting channels 83, and the first buffer cavity. Alternatively, a corresponding recessed channel may be formed on the lower surface of the top plate, and the recessed channel and the upper surface of the bottom plate together form the plurality of annular channels 82, the plurality of first connecting channels 81, the plurality of second connecting channels 83, and the first buffer cavity. Alternatively, corresponding recesses may be formed on the upper surface of the bottom plate 32 and the lower surface of the top plate 31 , and the recesses of the two together form multiple annular channels 82 , multiple first connecting channels 81 , multiple second connecting channels 83 and a first buffer chamber 91 .

[0067] A plurality of the above-mentioned first pressure-holding channels 92 are formed through the top plate 31, and the air outlet end of each first pressure-holding channel 92 is located on the upper surface of the second annular step portion 312. A plurality of air inlet holes 321 are provided through the bottom plate 32, one end of each of the plurality of air inlet holes 321 is connected to a plurality of air inlets 81a in a one-to-one correspondence, and the other end of each of the plurality of air inlet holes 321 is used to connect to an air source. The above-mentioned supporting body 3 is a split structure consisting of a top plate 31 and a bottom plate 32. In combination with the above-mentioned edge ring 33, the structure is simple and easy to process and manufacture, thereby greatly reducing the application and manufacturing costs. In some embodiments, the top plate 31 and the bottom plate 32 are sealed and connected by welding.

[0068] In some embodiments, the supporting device further includes a support shaft 6, which is vertically arranged, and the upper end of the support shaft 6 is fixedly connected to the base plate 32 at its center position, for example, by welding. Each air inlet hole 321 in the base plate 32 can be connected to an external air source through an air inlet channel 62 provided in the support shaft 6. The support shaft 6 can be, for example, liftable. In this case, the lower end of the support shaft 6 can extend from the bottom of the process chamber of the semiconductor process equipment so as to be connected to an external lifting drive source. In addition, a bellows is provided on the support shaft 6 to seal the gap between the support shaft 6 and the process chamber, thereby ensuring the sealing of the process chamber.

[0069] In some embodiments, the top plate 31 may be a disc-shaped plate structure made of ceramic material. The bottom plate 32 may be a disc-shaped plate structure made of ceramic material.

[0070] In some embodiments, a heating element 7 may be provided in the top plate 31 or the bottom plate 32. The heating element 7 may be, for example, a heating wire or a heating tube, for heating the wafer 4. In addition, the heating elements 7 may be provided in different areas of the top plate 31 or the bottom plate 32. For example, as shown in FIG2 , there are two heating elements 7, namely a first heating element 71 and a second heating element 72, which are respectively provided in correspondence with the center area and the edge area of ​​the top plate 31 or the bottom plate 32 to achieve zoned temperature control.

[0071] In some embodiments, to achieve the vacuum adsorption function of the carrier device, the carrier body 3 (top plate 31 and bottom plate 32) is further provided with a plurality of adsorption holes 5 extending through the carrier body 3. For example, FIG4 shows four adsorption holes 5. The plurality of adsorption holes 5 are evenly distributed along the circumference of the carrier body 3 and staggered with the air inlet 81a. Each adsorption hole 5 can be connected to an external vacuum adsorption device via an adsorption channel 61 provided in the support shaft 6.

[0072] In one specific embodiment, a corresponding recessed channel is formed on the lower surface of the top plate 31. The recessed channel and the upper surface of the bottom plate 31 together form a plurality of annular channels 82, a plurality of first connecting channels 81, a plurality of second connecting channels 83, and a first buffer chamber 91. There are three annular channels 82, which are arranged at equal intervals. The radial width of the innermost annular channel 82a is greater than the radial widths of the other two annular channels 82b, and the radial widths of the other two annular channels 82b are the same. There are two first connecting channels 81, and the width of the first connecting channel 81 is the same as the radial width of the innermost annular channel 82a, for example, 6 mm. The width of each second connecting channel 83a connected to the innermost annular channel 82a is greater than the width of each second connecting channel on a different circumference (for example, second connecting channels 83b and 83c). The width of each second connecting channel on a different circumference (for example, second connecting channels 83b and 83c) is the same, for example, 3 mm. There are four second connecting channels 83a communicating with the innermost annular channel 82a. The number of second connecting channels on different circumferences (e.g., second connecting channels 83b and 83c) increases from the innermost part outward by a factor of two. The plurality of first pressure-holding channels 92 include a plurality of vertically arranged first through-holes 92a and a plurality of vertically arranged second through-holes 92b. The total number of first through-holes 92a and second through-holes 92b is 48, including 32 first through-holes 92a and 16 second through-holes 92b. The annular channel 82, first connecting channel 81, and second connecting channel 83 have the same depth, for example, 2 mm.

[0073] FIG5 is a graph showing the gas flow rate and the chuck diameter of the carrier provided in the related art. FIG6 is a graph showing the gas flow rate and the chuck diameter of the carrier provided in the embodiment of the present application. FIG7 is a comparison diagram of the curve shown in FIG5 and the curve shown in FIG6. The carrier provided in the related art shown in FIG1 adopts a purge channel structure as shown in FIG1, specifically, the purge gas is directed to the buffer cavity 2 at the edge of the chuck through multiple horizontal straight channels 1, and then the purge gas is directed to the edge of the wafer 4 through the corresponding channels, so that the purge gas can be blown out toward the back and side of the wafer 4. The curves shown in FIG6 and FIG7 are obtained by simulation calculation using the same simulation conditions, which are: the purge gas provided by the gas source is argon (Ar), the inlet flow rate is 800 sccm, and the inlet temperature is room temperature; the temperature of the heating element in the carrier is 400°C; and the chamber wall temperature of the process chamber is 120°C. By comparison, it can be seen that the gas flow fluctuation of the purge gas in the carrier provided in the embodiment of the present application is smaller and the gas flow uniformity is better.

[0074] As another technical solution, an embodiment of the present application further provides a semiconductor process equipment, including a process chamber and a carrier device arranged in the process chamber, and the carrier device adopts the above-mentioned carrier device provided in the embodiment of the present application.

[0075] The semiconductor process equipment provided in the embodiment of the present application can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge portion of the wafer by adopting the above-mentioned supporting device provided in the embodiment of the present application, thereby improving the process uniformity.

[0076] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A carrying device, comprising a carrying surface for carrying a wafer, characterized in that: The carrier device is provided with a purge channel structure for conveying a purge gas, the purge channel structure comprising a first gas-uniform channel group and a second gas-uniform channel group that are interconnected, the first gas-uniform channel group having an air inlet for connecting to a gas source; the second gas-uniform channel group having an air outlet for blowing the purge gas toward an edge portion of a wafer placed on the carrier surface; The first gas-uniform channel group includes at least one annular channel, a plurality of first connecting channels and a plurality of second connecting channels, and the second gas-uniform channel group surrounds the periphery of the annular channel; The plurality of first connecting channels are all located in the space surrounded by the annular channel, one end of each of the first connecting channels is used as the air inlet, and the other end is communicated with the annular channel; The annular channel is in communication with the second gas uniforming channel group via a plurality of second connecting channels; and the plurality of second connecting channels are arranged at intervals along the circumference of the annular channel.

2. The carrying device according to claim 1, characterized in that: There are multiple annular channels, which are nested with each other and arranged at intervals; Each adjacent two annular channels, as well as the outermost annular channel and the second gas-uniform channel group, are connected via a plurality of second connecting channels; and the plurality of second connecting channels located on the same circumference are arranged at intervals along the circumference, and the second connecting channels located on different circumferences are staggered with each other; The plurality of first connecting channels are all located in the space surrounded by the innermost annular channel, and the other end of the first connecting channel is connected to the innermost annular channel; the second gas uniformizing channel group surrounds the periphery of the outermost annular channel.

3. The carrying device according to claim 1, characterized in that: The plurality of second connecting channels are evenly distributed along the circumference of the annular channel.

4. The carrying device according to claim 2, characterized in that: The radial width of the innermost annular channel is greater than the radial widths of the other annular channels; The width of each of the second connecting channels connected to the innermost annular channel is greater than the width of each of the second connecting channels on other different circumferences.

5. The carrying device according to claim 4, characterized in that: The radial widths of the annular channels other than the innermost annular channel are the same or decrease from the inside to the outside.

6. The carrying device according to claim 4, characterized in that: The radial widths of the second connecting channels on different circumferences other than the second connecting channels connected to the innermost annular channel are the same or decrease from the inside to the outside.

7. The carrying device according to claim 2, characterized in that: The first connecting channel and the second connecting channel are both arranged to extend radially along the bearing surface; The position where each of the first connecting channels communicates with the innermost annular channel is located in the middle between two adjacent second connecting channels that communicate with the annular channel.

8. The carrying device according to claim 7, characterized in that: The position where the second connecting channel on each circumference communicates with the annular channel adjacent to the outer side is located in the middle position between two adjacent second connecting channels on the adjacent circumferences of the outer side.

9. The carrying device according to any one of claims 1 to 8, characterized in that: The second gas uniformity channel group includes a first buffer chamber, a plurality of first pressure holding channels, a second buffer chamber and a plurality of second pressure holding channels, wherein: The first buffer cavity is annular and surrounds the outer periphery of the outermost annular channel, and is connected to the outermost annular channel through a plurality of the second connecting channels; The second buffer cavity is annular and is spaced above the first buffer cavity. The second buffer chamber is connected to the first buffer chamber through a plurality of the first pressure-holding channels; One ends of the plurality of second pressure-holding channels are all communicated with the second buffer chamber, and the other ends of the plurality of second pressure-holding channels are all used as the air outlets.

10. The carrying device according to claim 9, characterized in that: The volume of the first buffer chamber is smaller than or equal to the volume of the second buffer chamber.

11. The carrying device according to claim 9, characterized in that: The plurality of first pressure-holding channels include a plurality of vertically arranged first through holes and a plurality of vertically arranged second through holes, wherein one first through hole is arranged on both sides of each of the second connecting channels communicating with the first buffer chamber; A second through hole is disposed on both sides of each second connecting channel communicating with the first buffer cavity, and the second through hole is located on a side of the first through hole on the same side thereof away from the second connecting channel.

12. The carrying device according to claim 9, characterized in that: The carrying device comprises a carrying body and an edge ring, wherein the carrying body has the carrying surface, and the diameter of the carrying surface is smaller than the diameter of the wafer, so that the edge of the wafer can be located outside the carrying surface; a first annular step portion is formed on the top of the outer peripheral surface of the carrying body, The edge ring comprises an annular body, a first annular flange is arranged on the inner circumference of the annular body, the first annular flange is arranged above the first annular step portion at intervals, and at least a part of the first annular flange is located below the wafer, and the lower surface and the inner circumference of the first annular flange respectively form the second pressure holding channel with the upper surface of the first annular step portion and the outer circumference of the bearing body; A second annular step portion is formed on the outer circumferential surface of the bearing body and is located below the first annular step portion, and a second annular flange is formed on the inner circumferential surface of the annular body and is located below the first annular flange, and at least a portion of the second annular flange overlaps the second annular step portion. The second buffer chamber is formed between the inner circumferential surface of the second annular flange, the outer circumferential surface of the first annular step portion, the upper surface of the second annular step portion and the lower surface of the first annular flange.

13. The carrying device according to claim 12, characterized in that: The bearing body comprises a top plate and a bottom plate stacked on the lower surface of the top plate, wherein a plurality of the annular channels, a plurality of the first connecting channels, a plurality of the second connecting channels and the first buffer cavity are formed between the upper surface of the bottom plate and the lower surface of the top plate; A plurality of the first pressure-holding channels are formed through the top plate, and the gas outlet end of each of the first pressure-holding channels is located on the upper surface of the second annular step portion; A plurality of air inlet holes are provided through the bottom plate, one end of the plurality of air inlet holes is connected with the plurality of air inlets in a one-to-one correspondence, and the other end of the plurality of air inlet holes is used to be connected with the air source.

14. A semiconductor process equipment, comprising a process chamber and a carrier arranged in the process chamber, characterized in that: The carrying device adopts the carrying device described in any one of claims 1-13.

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