Current detection device

Abstract

The present invention provides a configuration for more precisely detecting current when a shunt resistor is sandwiched and connected by plate-like wiring such as a bus bar or lead frame. A current detection device according to the present invention is provided with: a resistor with a laminated structure having a plate-like first electrode and second electrode, and a plate-like resistor disposed between the first electrode and the second electrode; and a plate-like first conductor and second conductor, through which a current to be measured flows and which are connected to the resistor. The first conductor is connected to the first electrode, the second conductor is connected to the second electrode, the resistor is laminated and disposed between the first conductor and the second conductor, and a first insulating layer and a first voltage detection pattern disposed via the first insulating layer for transmitting a voltage signal, are provided on one surface of the first conductor.

Description

Current detection device

[0001] The present invention relates to a current detection device.

[0002] In recent years, as the currents used in electronic devices have become larger, there has been active development of power modules, which convert and control power by switching power semiconductors. Power modules often use high-heat-dissipation substrates capable of carrying large currents, such as ceramic substrates called DBC substrates, which are formed by directly bonding copper to an alumina substrate. In some cases, components such as power semiconductors and shunt resistors are directly mounted on plate-shaped wiring (bus bars or lead frames) made of copper or other materials.

[0003] JP 2001-358283 A JP 2022-066642 A

[0004] The current detection shunt resistor described in Patent Document 1 aims to improve heat dissipation and reliability and to shorten the wiring length, but is not suitable for passing large currents because it requires bonding and connecting multiple wires.

[0005] Therefore, in order to pass a large current through such a vertically structured shunt resistor, a surface mounting method using an L-shaped electrode member has been devised as described in Patent Document 2. Patent Document 2 describes a method for drawing out a voltage signal by wire bonding in such a configuration.

[0006] On the other hand, in order to detect even larger currents, cases are being considered in which vertical shunt resistors are connected by being sandwiched between plate-shaped wiring such as bus bars or lead frames. In such cases, issues arise regarding how to extract the voltage signal required for accurate current detection and how to connect to the control circuit board.

[0007] The present invention has been made to solve such problems, and aims to provide a configuration for detecting current more accurately when a shunt resistor is connected by being sandwiched between plate-shaped wiring such as a bus bar or a lead frame.

[0008] An example of a current detection device according to the present invention comprises: a resistor having a laminated structure, which has plate-shaped first and second electrodes and a plate-shaped resistive element arranged between the first and second electrodes; and plate-shaped first and second conductors through which a current to be measured flows and which are connected to the resistor, wherein the first conductor is connected to the first electrode and the second conductor is connected to the second electrode, the resistor is arranged in a laminated manner between the first conductor and the second conductor, and a first insulating layer and a first voltage detection pattern for transmitting a voltage signal arranged via the first insulating layer are provided on one side of the first conductor.

[0009] In one example, one end of the first voltage detection pattern is connected to the first conductor.

[0010] In one example, one end of the first voltage detection pattern is connected to the first electrode.

[0011] In one example, the first conductor further comprises a second voltage detection pattern for transmitting a voltage signal disposed through the first insulating layer.

[0012] In one example, the current detection device further includes a plate-shaped voltage terminal for detecting voltage, the voltage terminal having a flat portion and a terminal connection portion formed by extending a portion of the side surface, the flat portion of the voltage terminal being stacked and connected between the second electrode and the second conductor, and the terminal connection portion being connected to one end of the second voltage detection pattern.

[0013] In one example, the first insulating layer is flexible, the first insulating layer has an extension portion that extends in a bent manner, one end of the second voltage detection pattern is positioned on the extension portion of the first insulating layer, and the one end of the second voltage detection pattern is connected to a second conductor.

[0014] In one example, a through hole is provided in the first conductor in a region that overlaps with the first electrode when viewed from the stacking direction, a conductor connection portion is provided in the first conductor between the through hole and an end of the first conductor, and one end of the first voltage detection pattern is connected to the conductor connection portion of the first conductor.

[0015] In one example, a through hole is provided in the first conductor in a region that overlaps with the first electrode when viewed from the stacking direction, the first electrode has an exposed portion that is exposed in the through hole, and one end of the first voltage detection pattern is connected to the exposed portion of the first electrode.

[0016] In one example, the first conductor further includes a second insulating layer, the first insulating layer and the first voltage detection pattern are covered with the second insulating layer except for a portion of the first voltage detection pattern, a via is formed in the first insulating layer and the second insulating layer, through which the first conductor extends in the stacking direction, and the first electrode and the first conductor are connected through the via.

[0017] The current detection device of the present invention has a simplified structure in which a vertical shunt resistor is sandwiched and connected to plate-shaped wiring such as a bus bar or lead frame, and has a voltage signal extraction structure that enables high-precision voltage detection, and can be easily connected to a control circuit board.

[0018] Furthermore, in the current detection device according to the present invention, the heat dissipation of the shunt resistor is improved, and excellent detection accuracy is achieved even in the case of a large current.

[0019] 1 is a perspective view showing a configuration example of a resistor 10 according to a first embodiment of the present invention. FIG. 2 is a side view showing a configuration example of a current detection device 100 according to the first embodiment. FIG. 3 is a perspective view of a DBC substrate 20 according to the first embodiment. FIG. 4 is a side view showing a configuration example of a current detection device 100 according to a second embodiment. FIG. 5 is a perspective view showing a configuration example of a current detection device 100 according to the second embodiment. FIG. 6 is a bottom view of a busbar 23 according to the second embodiment. FIG. 7 is a perspective view of a Cu clip 60 according to the second embodiment. FIG. 8 is a side view showing a configuration example of a current detection device 100 according to a third embodiment. FIG. 9 is a perspective view showing a configuration example of a current detection device 100 according to the third embodiment. FIG. 10 is a bottom view of a busbar 23 according to the third embodiment. FIG. 11 is a side view showing a configuration example of a current detection device 100 according to a fourth embodiment. FIG. 12 is a perspective view showing a configuration example of a current detection device 100 according to the fourth embodiment. FIG. 13 is a bottom view of a busbar 23 according to the fourth embodiment. FIG. 14 is a side view showing a configuration example of a current detection device 100 according to a fifth embodiment. FIG. 15 is a bottom view showing a configuration example of a current detection device 100 according to the fifth embodiment. 19 is a side view showing a configuration example of a current detection device 100 according to Example 6. FIG. 20 is a perspective view of a Cu clip 60 according to Example 6. FIG. 21 is a partial top view of FIG. 16. FIG. 22 is a side view showing a configuration example of a current detection device 100 according to Example 7. FIG. 23 is a partial top view of FIG. 19. FIG. 24 is a side view showing a configuration example of a current detection device 100 according to a modified example of Example 7. FIG. 25 is a partial top view of FIG. 21. FIG. 26 is a side view showing a configuration example of a current detection device 100 according to Example 8. FIG. 27 is a partial top view of FIG. 23.

[0020] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings. First Embodiment Fig. 1 is a perspective view showing a configuration example of a resistor 10 according to a first embodiment of the present invention. A current detection device includes the resistor 10.

[0021] The resistor 10 is a laminated resistor having a plate-shaped first electrode 12 and a plate-shaped second electrode 13, and a plate-shaped resistive element 11 disposed between the first electrode 12 and the second electrode 13. The resistor 10 is, for example, a resistor for current detection or a shunt resistor. In particular, the resistor 10 can be said to be a shunt resistor with a vertical structure. In the example of FIG. 1, the resistive element 11 is formed in a square or rectangular shape, but the shape can be designed arbitrarily.

[0022] The material of the first electrode 12 and the second electrode 13 is a highly conductive metal material such as Cu. The material of the resistor 11 is a metal material suitable for current detection, such as a Cu-Ni system, a Cu-Mn system, or a Ni-Cr system, or a composite material containing a metal. The dimensions of the resistor 10 are, for example, 5 mm x 5 mm x 0.5 mm thick. The thicknesses of the first electrode 12 and the second electrode 13 are each, for example, 0.1 mm. The thickness of the resistor 11 is, for example, 0.3 mm.

[0023] FIG. 1 shows an example of a resistor 10, but other configurations are possible, and for example, a current detection resistor disclosed in Japanese Patent Application Laid-Open No. 2018-170478 may be used.

[0024] Fig. 2 is a side view showing an example of the configuration of the current detection device 100. The current detection device 100 includes a resistor 10, a DBC substrate 20 (DBC: Direct Bonded Copper), and a bus bar 22 (second conductor). Fig. 2 shows a cross section of only the DBC substrate 20. Fig. 3 is a perspective view of the DBC substrate 20.

[0025] The DBC substrate 20 includes a copper plate 21 (first conductor). The copper plate 21 is a plate-shaped conductor, and a current to be measured flows through the copper plate 21. The copper plate 21 is connected to the resistor 10 (particularly the first electrode 12). The thickness of the copper plate 21 is, for example, within a range of 0.3 mm to 2.0 mm at its thinnest portion (for example, the portion other than vias 33 described below in FIG. 2).

[0026] The bus bar 22 is also a plate-shaped conductor, and a current to be measured flows through the bus bar 22. The bus bar 22 is connected to the resistor 10 (particularly the second electrode 13). The resistor 10 is arranged in a stacked manner between the copper plate 21 and the bus bar 22. The thickness of the bus bar 22 is, for example, 0.3 mm or more, and specifically 0.5 mm.

[0027] In the DBC substrate 20, a first insulating layer 31, a second insulating layer 32, and a first voltage detection pattern 41 are provided on one surface of a copper plate 21. The first insulating layer 31 is made of, for example, silicon nitride, aluminum nitride, alumina, zirconia, or the like. The thickness of the first insulating layer 31 is, for example, within a range of 0.1 mm to 1 mm, and specifically, 0.3 mm. The second insulating layer 32 is made of, for example, solder resist. The thickness of the second insulating layer 32 is, for example, within a range of 10 μm to 50 μm. The first voltage detection pattern 41 is a pattern for transmitting a voltage signal and is disposed on the copper plate 21 via the first insulating layer 31. The first voltage detection pattern 41 is made of, for example, Cu foil, and has a thickness of, for example, 35 μm.

[0028] Vias 33 are formed in the first insulating layer 31 and the second insulating layer 32, through which the copper plate 21 extends in the stacking direction, and the copper plate 21 is exposed at its lower exposed surface 21 a from the first insulating layer 31 and the second insulating layer 32. The lower exposed surface 21 a is joined to the first electrode 12. In this way, the copper plate 21 and the first electrode 12 are connected through the vias 33.

[0029] The first insulating layer 31 and the first voltage detection pattern 41 are covered with the second insulating layer 32 except for a portion of the first voltage detection pattern 41. In the example of Figures 2 and 3, the first voltage detection pattern 41 is exposed at the electrode connection portion 41a and the voltage extraction portion 41b, and the remaining portion is covered with the second insulating layer 32. One end of the first voltage detection pattern 41, i.e., the electrode connection portion 41a, is connected to the upper surface of the first electrode 12.

[0030] In this specification, "one end" means, in one example, a portion including the longitudinal end, and for example, in Fig. 2, the electrode connection portion 41a is formed including the longitudinal end of the first voltage detection pattern 41. However, in a modified example, strictly speaking, it may not include the longitudinal end, but may mean a region in the vicinity of the longitudinal end.

[0031] The voltage lead-out portion 41b may be configured so as not to be exposed from the second insulating layer 32 (for example, it may be exposed at the opposite end of the DBC substrate 20 not shown in FIGS. 2 and 3).

[0032] The connection between the first electrode 12 and the copper plate 21, the connection between the first electrode 12 and the first voltage detection pattern 41, and the connection between the second electrode 13 and the bus bar 22 are realized by, for example, soldering, welding, low-temperature sintering, or the like.

[0033] With this configuration, current flows into the resistor 10 through the thick copper pattern formed by the copper plate 21 on the surface of the DBC substrate 20, and voltage can be extracted from the top surface of the resistor 10 through the first voltage detection pattern 41 on the back surface of the DBC substrate 20.

[0034] FIG. 2 schematically shows the connection relationship between the current detection device 100 and the control circuit 50. The control circuit 50 is connected to the current detection device 100 via, for example, wires 51 and 52. The wires 51 and 52 are, for example, wire bonding. In the example of FIG. 2, the wire 51 connects the voltage extraction portion 41b of the first voltage detection pattern 41 to the control circuit 50, and the wire 52 connects the bus bar 22 to the control circuit 50. With this configuration, a voltage signal between the upper and lower surfaces of the resistor 10 (i.e., between the first electrode 12 and the second electrode 13) can be supplied to the control circuit 50.

[0035] This configuration allows for more accurate current detection. For example, the portions where wirings 51 and 52 are connected to current detection device 100 are each designed to ensure a certain degree of surface area, making it easy to achieve appropriate connections to improve accuracy.

[0036] 4 and 5 show a configuration example of a current detection device 100 according to a second embodiment. Fig. 4 is a side view, and Fig. 5 is a perspective view seen from the bottom. The second embodiment will be described below, but descriptions of parts common to the first embodiment may be omitted.

[0037] The current detection device 100 includes a bus bar 23 (first conductor) instead of the DBC substrate 20 of the first embodiment ( FIG. 2 ), and a Cu frame 24 (second conductor) instead of the bus bar 22. The thickness of the Cu frame 24 is, for example, 0.1 mm or more, and specifically 0.5 mm.

[0038] 6 shows a bottom view of bus bar 23. As shown in FIGS. 4 to 6, bus bar 23 has a first insulating layer 31 on one surface. First insulating layer 31 is made of, for example, a highly heat-resistant material (polyimide, epoxy, etc.). The thickness of first insulating layer 31 is, for example, in the range of 20 μm to 100 μm.

[0039] The bus bar 23 includes a first voltage detection pattern 41 disposed on the same surface as the first insulating layer 31, with the first insulating layer 31 interposed therebetween. One end of the first voltage detection pattern 41, i.e., a bus bar connection portion 41c, is connected to the bus bar 23.

[0040] The bus bar 23 further includes a second voltage detection pattern 42 disposed on the same surface as the first insulating layer 31, with the first insulating layer 31 interposed therebetween. The second voltage detection pattern 42 is a pattern for transmitting a voltage signal.

[0041] The current detection device 100 further includes a plate-shaped Cu clip 60 (voltage terminal) for detecting voltage. Fig. 7 shows a perspective view of the Cu clip 60 as seen from above. The thickness of the Cu clip 60 is, for example, within a range of 0.1 mm to 0.3 mm, and is specifically 0.1 mm.

[0042] The Cu clip 60 has a flat portion 60a and a terminal connection portion 60b formed by extending a portion of the side surface. The flat portion 60a is laminated and connected between the second electrode 13 of the resistor 10 and the Cu frame 24. The terminal connection portion 60b is connected to one end of the second voltage detection pattern 42, i.e., the terminal connection portion 42a.

[0043] With this configuration, the first electrode 12 of the resistor 10 is connected to the first voltage detection pattern 41 via the bus bar 23, and the second electrode 13 is connected to the second voltage detection pattern 42 via the Cu clip 60. Although a control circuit is not specifically shown, a voltage is extracted via the first voltage detection pattern 41 and the second voltage detection pattern 42. In this way, the voltage output of the resistor 10 can be supplied to the control circuit with high accuracy.

[0044] Example 3 Example 3 is different from Example 2 in that the first insulating layer is made flexible. Example 3 will be described below, but descriptions of parts common to Example 1 or 2 may be omitted.

[0045] 8 and 9 show a configuration example of a current detection device 100 according to a third embodiment. Fig. 8 is a side view (partially cross-sectional), Fig. 9 is a perspective view seen from the bottom side, and Fig. 10 shows a bottom view of the bus bar 23.

[0046] The current detection device 100 includes an insulating flexible substrate 34 instead of the first insulating layer 31 of the second embodiment (FIGS. 4 to 6). The thickness of the flexible substrate 34 is, for example, in the range of 20 μm to 80 μm. If the thickness is less than 20 μm, the material is too soft, making the flexible substrate 34 difficult to handle, and if the thickness is 100 μm or more, the flexible substrate 34 is too hard and does not provide flexibility.

[0047] 8, vias 34a are formed in flexible substrate 34. One end of first voltage detection pattern 41 is exposed on the back surface of flexible substrate 34 (i.e., the surface opposite to the surface on which first voltage detection pattern 41 is provided), forming bus bar connection portion 41c. Bus bar connection portion 41c is connected to bus bar 23 through vias 34a. This connection is realized by, for example, soldering, welding, low-temperature sintering, or the like.

[0048] Even with this configuration, voltage can be extracted via the first voltage detection pattern 41 and the second voltage detection pattern 42.

[0049] Example 4 is an example of Example 3 in which wire bonding is used to connect the first voltage detection pattern 41. Example 4 will be described below, but descriptions of parts common to Examples 1 to 3 may be omitted.

[0050] 11 and 12 show a configuration example of a current detection device 100 according to a fourth embodiment. Fig. 11 is a side view, Fig. 12 is a perspective view seen from the bottom side, and Fig. 13 is a bottom view of the bus bar 23.

[0051] One end of the first voltage detection pattern 41, i.e., the wire connection portion 41d, and the bus bar 23 are connected by a bonding wire 53. The material of the bonding wire 53 is, for example, Au, Ag, Cu, or Al.

[0052] Example 5 is an example in which the Cu clip 60 in Example 3 is omitted and an extension portion is provided on the flexible substrate 34. Example 5 will be described below, but descriptions of parts common to any of Examples 1 to 4 may be omitted.

[0053] 14 and 15 show a configuration example of a current detection device 100 according to a fifth embodiment. Fig. 14 is a side view (partial cross section), and Fig. 15 is a bottom view.

[0054] As described above, the flexible substrate 34 is flexible and includes the extending portion 34b that bends and extends. In this embodiment, the extending portion 34b extends in a direction from the bus bar 23 toward the Cu frame 24 at an end of the flexible substrate 34 (for example, at a longitudinal end of the second voltage detection pattern 42). One end of the second voltage detection pattern 42, i.e., the Cu frame connection portion 42b, is disposed on the extending portion 34b. The Cu frame connection portion 42b is connected to the Cu frame 24.

[0055] In this way, by extending a portion of the flexible substrate 34, the Cu clip 60 can be omitted and the flexible substrate 34 can be directly connected to the Cu frame 24 (which may be a bus bar).

[0056] Example 6 is a sixth embodiment in which the surface of the bus bar 23 on which the flexible substrate 34 is disposed is opposite to that of Example 3. Example 6 will be described below, but descriptions of parts common to any of Examples 1 to 5 may be omitted.

[0057] Fig. 16 is a side view (partially cross-sectional) showing a configuration example of a current detection device 100 according to Example 6. Fig. 17 shows a perspective view of a Cu clip 60 as seen from the bottom side. Fig. 18 shows a top view of a part of Fig. 16 .

[0058] In the third embodiment ( FIG. 8 , etc.), the flexible substrate 34 is arranged on the surface of the bus bar 23 facing the resistor 10, but in the present embodiment, the flexible substrate 34 is arranged on the surface of the bus bar 23 opposite the resistor 10. Similarly, the first voltage detection pattern 41 and the second voltage detection pattern 42 are arranged on the surface of the bus bar 23 opposite the resistor 10.

[0059] The bus bar 23 has a through hole 23a that penetrates the bus bar 23 in the stacking direction. The Cu clip 60 has an extension portion 60c ( FIG. 17 ), which passes through the through hole 23a and extends to the opposite side of the bus bar 23 (i.e., the side on which the second voltage detection pattern 42 is arranged). To avoid a short circuit between the Cu clip 60 and the bus bar 23, the direction in which the extension portion 60c extends is preferably parallel to the stacking direction (i.e., perpendicular to the flat portion 60a). At least the portion of the extension portion 60c that is located within the through hole 23a is preferably surrounded by an insulating portion 60d. The insulating process is achieved, for example, by coating with epoxy resin or the like.

[0060] The tip of the extension 60c, i.e., the terminal connection portion 60b, of the Cu clip 60 is connected to the terminal connection portion 42a of the second voltage detection pattern 42 via the solder 70. With this configuration, the first electrode 12 of the resistor 10 is connected to the first voltage detection pattern 41 via the bus bar 23 and the bus bar connection portion 41c ( FIG. 18 , similar to FIG. 8 of the third embodiment, etc.), and the second electrode 13 is connected to the second voltage detection pattern 42 via the Cu clip 60 and the solder 70.

[0061] With this configuration, the bus bar 23 can be attached to the resistor 10, the Cu frame 24, and the Cu clip 60 from the same direction, which makes the assembly process more efficient.

[0062] Example 7 In Example 7, through holes are provided in the bus bar 23 of Example 6, and wire bonding is used for connection. Example 7 will be described below, but descriptions of parts common to any of Examples 1 to 6 may be omitted.

[0063] Fig. 19 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to Example 7. Fig. 20 is a top view of a part of Fig. 19 .

[0064] A through hole 23a is provided in the bus bar 23. The through hole 23a is provided in a region of the bus bar 23 that overlaps with the first electrode 12 when viewed from the stacking direction. The first electrode 12 has an exposed portion 12a that is exposed in the through hole 23a. The bus bar 23 and the resistor 10 (particularly the first electrode 12) may be connected by soldering, low-temperature sintering, or the like, but ultrasonic welding is preferably used.

[0065] In bus bar 23, conductor connection portion 23b is provided between through hole 23a and the end of bus bar 23. One end of first voltage detection pattern 41, i.e., wire connection portion 41d, is connected to conductor connection portion 23b of bus bar 23 via wire bonding 54. That is, wire bonding 54 connects wire connection portion 41d and conductor connection portion 23b across the upper part of through hole 23a.

[0066] At the end of the bus bar 23, the Cu clip 60 extends longer than the bus bar 23, and an extension 60c is disposed on the longitudinal side at a position beyond the end of the bus bar 23 (only the extension 60c of the Cu clip 60 is shown in FIG. 20 ). The terminal connection portion 42a of the second voltage detection pattern 42 and the extension 60c are connected via wire bonding 55.

[0067] By controlling the positional relationship between the through-hole 23 a formed in the bus bar 23 , the resistor 10 , and the wire bonding 54 , it is possible to adjust the temperature coefficient of resistance (TCR) of the current detection device 100 .

[0068] Fig. 21 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to a modified example of Example 7. Fig. 22 is a top view of a part of Fig. 21 .

[0069] In place of the wire bonding 54 of the seventh embodiment, a wire bonding 56 is provided in this modification. The wire bonding 56 is connected to the exposed portion 12a of the first electrode 12, not to the bus bar 23. In this manner, one end of the first voltage detection pattern 41, i.e., the wire connection portion 41d, and the exposed portion 12a of the first electrode 12 are connected via the wire bonding 56.

[0070] By controlling the positional relationship between the through-hole 23 a formed in the bus bar 23 , the resistor 10 , and the wire bonding 56 , it is possible to adjust the temperature coefficient of resistance (TCR) of the current detection device 100 .

[0071] Example 8 is similar to Example 5 in that the Cu clip 60 is omitted from Example 6 or 7, and an extension portion 34b is provided on the flexible substrate 34. Example 8 will be described below, but descriptions of parts common to any of Examples 1 to 7 may be omitted.

[0072] Fig. 23 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to Example 8. Fig. 24 is a top view of a part of Fig. 23 .

[0073] In this embodiment, the extension portion 34 b extends in a direction from the bus bar 23 toward the Cu frame 24 at an end portion of the flexible substrate 34 (for example, an end portion in the longitudinal direction of the second voltage detection pattern 42 ).

[0074] The extending portion 34b is provided with a via 34c formed in the extending portion 34b in the stacking direction. One end of the second voltage detection pattern 42, i.e., a Cu frame connection portion 42b, is connected to the top surface of the Cu frame 24 through the via 34c.

[0075] In this way, by extending a portion of the flexible substrate 34, the Cu clip 60 can be omitted and the flexible substrate 34 can be directly connected to the Cu frame 24 (which may be a bus bar).

[0076] DESCRIPTION OF SYMBOLS 10...Resistor 11...Resistor element 12...First electrode 12a...Exposed portion 13...Second electrode 20...DBC substrate 21...Copper plate 21a...Lower exposed surface 22, 23...Bus bar 23a...Through hole 23b...Conductor connection portion 24...Cu frame 31...First insulating layer 32...Second insulating layer 33...Via 34...Flexible substrate (first insulating layer) 34a...Via 34b...Extension portion 34c...Via 41...First voltage detection pattern 41a...Electrode connection portion 41b...Voltage extraction portion 41c...Bus bar connection portion 41d...Wire connection portion 42...Second voltage detection pattern 42a...Terminal connection portion 42b...Cu frame connection portion 50...Control circuit 51...Wiring 52...Wiring 53, 54, 55, 56...Wire bonding 60... Cu clip (voltage terminal) 60a... Flat portion 60b... Terminal connection portion 60c... Extension portion 60d... Insulation processed portion 100... Current detection device

Claims

1. A current detection device comprising: a resistor with a laminated structure having plate-shaped first and second electrodes and a plate-shaped resistive element arranged between the first and second electrodes; and plate-shaped first and second conductors through which a current to be measured flows and which are connected to the resistor, wherein the first conductor is connected to the first electrode and the second conductor is connected to the second electrode, the resistor is arranged in a laminated manner between the first conductor and the second conductor, and a first insulating layer and a first voltage detection pattern for transmitting a voltage signal arranged via the first insulating layer are provided on one side of the first conductor.

2. The current detection device according to claim 1, wherein one end of the first voltage detection pattern is connected to the first conductor.

3. The current detection device according to claim 1, wherein one end of the first voltage detection pattern is connected to the first electrode.

4. A current detection device as claimed in claim 2 or 3, wherein the first conductor further comprises a second voltage detection pattern for transmitting a voltage signal disposed through the first insulating layer.

5. The current detection device according to claim 4, further comprising a plate-shaped voltage terminal for detecting voltage, the voltage terminal having a flat portion and a terminal connection portion formed by extending a portion of a side surface, the flat portion of the voltage terminal being laminated and connected between the second electrode and the second conductor, and the terminal connection portion being connected to one end of the second voltage detection pattern.

6. The current detection device according to claim 4, wherein the first insulating layer is flexible, the first insulating layer has an extension portion that extends in a bent manner, one end of the second voltage detection pattern is disposed on the extension portion of the first insulating layer, and the one end of the second voltage detection pattern is connected to a second conductor.

7. A current detection device as described in claim 2, wherein the first conductor has a through hole in a region that overlaps with the first electrode when viewed in the stacking direction, the first conductor has a conductor connection portion between the through hole and an end of the first conductor, and one end of the first voltage detection pattern is connected to the conductor connection portion of the first conductor.

8. A current detection device as described in claim 3, wherein the first conductor has a through hole in a region overlapping with the first electrode when viewed in the stacking direction, the first electrode has an exposed portion exposed in the through hole, and one end of the first voltage detection pattern is connected to the exposed portion of the first electrode.

9. The current detection device described in claim 3, wherein the first conductor further comprises a second insulating layer, the first insulating layer and the first voltage detection pattern are covered with the second insulating layer except for a portion of the first voltage detection pattern, a via is formed in the first insulating layer and the second insulating layer, through which the first conductor extends in the stacking direction, and the first electrode and the first conductor are connected through the via.

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