Mask and method for producing mask

Abstract

This mask may comprise: a base material including a base material first surface, a base material second surface positioned on the opposite side of the base material first surface, and at least one first opening penetrating the base material from the base material first surface to the base material second surface; and a laminated body including a first surface facing the base material second surface, a second surface positioned on the opposite side of the first surface, a magnetic layer that includes a magnetic metal, and a non-magnetic layer positioned between the magnetic layer and the first surface or between the magnetic layer and the second surface. The laminated body may include: a pattern region overlapping the first opening in a plan view and including a plurality of second openings penetrating the magnetic layer and the non-magnetic layer; a peripheral region surrounding the pattern region in a plan view; and an outer edge region surrounding the peripheral region in a plan view and positioned at an outer edge of the laminated body.

Description

Mask and mask manufacturing method

[0001] FIELD Embodiments of the present disclosure relate to a mask and a method for manufacturing the mask.

[0002] Vapor deposition is known as a method for forming precise patterns. In vapor deposition, a mask having openings formed therein is combined with a substrate. Then, a vapor deposition material is applied to the substrate through the openings in the mask. As a result, a vapor deposition layer containing the vapor deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels of an organic electroluminescence (EL) display device.

[0003] For example, Patent Document 1 discloses a deposition mask including an outer frame substrate including beam portions that define a plurality of pixel areas, and a mask substrate including a plurality of openings located in the pixel areas. The mask substrate is thinner than the outer frame substrate. For example, the thickness of the mask substrate is 1 μm to 100 μm, and the thickness of the outer frame substrate is 100 μm to 775 μm.

[0004] Japanese Patent Application Laid-Open No. 2022-175723

[0005] Since the mask substrate is thin, the position or size of the openings in the mask substrate is likely to change due to temperature changes, etc. If the position or size of the openings changes, the position or size of the deposition layer formed on the substrate also changes.

[0006] A mask according to an embodiment of the present disclosure may include a substrate including a substrate first surface, a substrate second surface located opposite the substrate first surface, and at least one first opening penetrating from the substrate first surface to the substrate second surface, a first surface facing the substrate second surface, a second surface located opposite the first surface, a magnetic layer including a magnetic metal, and a non-magnetic layer located between the magnetic layer and the first surface or between the magnetic layer and the second surface. The stack may include a pattern region overlapping the first opening in a plan view and including a plurality of second openings penetrating the magnetic layer and the non-magnetic layer, a peripheral region surrounding the pattern region in a plan view, and an outer edge region surrounding the peripheral region in a plan view and located at an outer edge of the stack.

[0007] According to the embodiments of the present disclosure, changes in the position or dimensions of the opening can be suppressed.

[0008] 1 is a cross-sectional view showing an example of an organic device. FIG. 2 is a diagram showing an example of a vapor deposition apparatus equipped with a mask. FIG. 3 is a plan view showing an example of a mask when viewed from the incident surface side. FIG. 4 is a plan view showing an example of a mask when viewed from the exit surface side. FIG. 5 is a cross-sectional view taken along line V-V of the mask in FIG. 3. FIG. 6 is a cross-sectional view showing an example of a pattern region. FIG. 7 is a cross-sectional view showing an example of a surrounding region. FIG. 8 is a cross-sectional view showing an example of an outer edge region. FIG. 9 is a cross-sectional view showing an example of a step of forming a second intermediate layer. FIG. 10 is a cross-sectional view showing an example of a step of forming a first non-magnetic layer. FIG. 11 is a cross-sectional view showing an example of a step of forming a through-hole in the first non-magnetic layer. FIG. 12 is a plan view showing an example of a step of forming a through-hole in the first insulating layer. FIG. 13 is a cross-sectional view showing an example of a step of forming a first intermediate layer. FIG. 14 is a plan view showing an example of a step of forming a first intermediate layer. FIG. 15 is a cross-sectional view showing an example of a step of forming an insulating layer. FIG. 16 is a plan view showing an example of a step of forming an insulating layer. FIG. 17 is a cross-sectional view showing an example of a step of forming a magnetic layer. FIG. 18 is a cross-sectional view showing an example of a magnetic layer. FIG. 19 is a cross-sectional view showing an example of a polishing step. FIG. 19 is a cross-sectional view showing an example of a step of forming a first protective layer. FIG. 19 is a cross-sectional view showing an example of a step of removing a portion of the insulating layer. FIG. 20 is a cross-sectional view showing an example of a step of forming a second protective layer and a resist layer. FIG. 21 is a cross-sectional view showing an example 10A and 10B are cross-sectional views showing an example of a step of removing a portion of the first intermediate layer; FIG. 10B are cross-sectional views showing an example of a step of removing the second protective layer and the resist layer; FIG. 10C are cross-sectional views showing an example of a magnetic layer according to the first modified example; FIG. 10D are cross-sectional views showing an example of a step of forming an insulating layer in the first modified example; FIG. 10E are cross-sectional views showing an example of a step of forming a first layer in the first modified example; FIG. 10F are cross-sectional views showing an example of a step of forming a second layer in the first modified example; FIG. 10H are cross-sectional views showing an example of a polishing step in the first modified example; FIG. 10H are cross-sectional views showing an example of a pattern region according to the second modified example; FIG. 10I are cross-sectional views showing an example of a step of forming a second non-magnetic layer in the second modified example; FIG. 10I are cross-sectional views showing an example of a step of forming a through hole in the second non-magnetic layer in the second modified example; FIG. 10I are cross-sectional views showing an example of a pattern region according to the third modified example; FIG. 10I are cross-sectional views showing an example of a polishing step in the third modified example; FIG. 10I are cross-sectional views showing an example of a step of forming a second non-magnetic layer in the third modified example.FIG. 10 is a cross-sectional view showing an example of a mask according to a fourth modified example. FIG. 11 is a plan view showing an example of a mask according to a fourth modified example. FIG. 12 is a cross-sectional view showing an example of a step of forming an insulating layer in the fourth modified example. FIG. 13 is a plan view showing an example of a step of forming an insulating layer in the fourth modified example. FIG. 14 is a cross-sectional view showing an example of a mask according to a fifth modified example. FIG. 15 is a plan view showing an example of a mask according to a fifth modified example. FIG. 16 is a cross-sectional view showing an example of a step of forming an insulating layer in the fifth modified example. FIG. 17 is a plan view showing an example of a step of forming an insulating layer in the fifth modified example. FIG. 18 is a diagram showing an example of an apparatus including an organic device.

[0009] In this specification and drawings, unless otherwise specified, terms meaning the materials underlying a certain structure, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0010] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0011] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0012] In this specification, when multiple upper limit value candidates and multiple lower limit value candidates are listed for a certain parameter, the numerical range of the parameter may be constructed by combining any one upper limit value candidate with any one lower limit value candidate. For example, consider a description that reads, "Parameter B is, for example, A1 or more, or may be A2 or more, or may be A3 or more. Parameter B is, for example, A4 or less, or may be A5 or less, or may be A6 or less." In this case, the numerical range of parameter B may be A1 or more and A4 or less, A1 or more and A5 or less, A1 or more and A6 or less, A2 or more and A4 or less, A2 or more and A5 or less, A2 or more and A6 or less, A3 or more and A4 or less, A3 or more and A5 or less, or A3 or more and A6 or less.

[0013] In this specification and drawings, unless otherwise specified, the state in which the surface of element A is "opposed to" the surface of element B includes not only the case in which the surface of element A is in contact with the surface of element B, but also the case in which element C is located between the surfaces of element A and element B. In other words, the term "opposed to" is a term that indicates the orientation of two surfaces.

[0014] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0015] Unless otherwise specified in the present specification and drawings, one embodiment of the present specification may be combined with other examples to the extent that no contradiction occurs. In addition, other examples may also be combined with each other to the extent that no contradiction occurs.

[0016] Unless otherwise specified, in the present specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the range that does not cause a contradiction.

[0017] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes of a display device other than an organic electroluminescence (EL) display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

[0018] A first aspect of the present disclosure is a mask comprising: a substrate including a substrate first surface, a substrate second surface located opposite the substrate first surface, and at least one first opening penetrating from the substrate first surface to the substrate second surface; and a laminate including a first surface facing the substrate second surface, a second surface located opposite the first surface, a magnetic layer including a magnetic metal, and a non-magnetic layer located between the magnetic layer and the first surface or between the magnetic layer and the second surface, wherein the laminate includes: a pattern region overlapping the first opening in a planar view and including a plurality of second openings penetrating the magnetic layer and the non-magnetic layer; a peripheral region surrounding the pattern region in a planar view; and an outer edge region surrounding the peripheral region in a planar view and located at the outer edge of the laminate.

[0019] A second aspect of the present disclosure may include the following aspect in the mask according to the first aspect described above: The nonmagnetic layer may have insulating properties.

[0020] A third aspect of the present disclosure may include the following aspect in the mask according to the first or second aspect: The nonmagnetic layer may contain silicon oxide or silicon nitride.

[0021] A fourth aspect of the present disclosure may include the following aspect in the mask according to any one of the first to third aspects: The substrate may include silicon or a silicon compound.

[0022] A fifth aspect of the present disclosure may be the mask according to any one of the first to fourth aspects described above, further comprising the following: The non-magnetic layer may include a first non-magnetic layer located between the magnetic layer and the first surface.

[0023] A sixth aspect of the present disclosure may be the mask according to the fifth aspect described above, further comprising the following: The laminate may include a first intermediate layer located between the first non-magnetic layer and the magnetic layer and containing a metal.

[0024] A seventh aspect of the present disclosure may be the mask according to the fifth or sixth aspect described above, further comprising the following: The peripheral region of the laminate may include a second intermediate layer located between the first nonmagnetic layer and the second surface of the substrate.

[0025] An eighth aspect of the present disclosure may be the mask according to any one of the first to seventh aspects described above, further comprising: the peripheral region of the laminate may include an insulating layer located on the same plane as the magnetic layer in the pattern region.

[0026] A ninth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to the eighth aspect described above: The insulating layer in the peripheral region may include a plurality of insulating portions distributed in a planar direction of the second surface of the substrate, and the peripheral region may include the magnetic layer located in gaps between the plurality of insulating portions.

[0027] A tenth aspect of the present disclosure may include the following aspect in the mask according to any one of the first to ninth aspects: The nonmagnetic layer may include a second nonmagnetic layer located between the magnetic layer and the second surface.

[0028] An eleventh aspect of the present disclosure is a method for manufacturing a mask, comprising: a substrate preparation step of preparing a substrate including a substrate first surface and a substrate second surface located opposite the substrate first surface; a first non-magnetic layer formation step of forming a first non-magnetic layer facing the substrate second surface and including a plurality of through holes; an insulating layer formation step of forming an insulating layer including a plurality of insulating portions that overlap the plurality of through holes in the first non-magnetic layer in a planar view; a magnetic layer formation step of forming a magnetic layer in gaps between the plurality of insulating portions; an insulating layer removal step of removing the plurality of insulating portions; and a substrate processing step of forming first openings in the substrate that overlap the plurality of through holes in the first non-magnetic layer in a planar view.

[0029] A twelfth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to the eleventh aspect described above: The method for manufacturing a mask may include a step of forming a first intermediate layer that covers the first nonmagnetic layer and contains a metal, and in the insulating layer forming step, the insulating layer may be formed on the first intermediate layer.

[0030] A thirteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to the eleventh or twelfth aspect described above: The method for manufacturing a mask may include a step of forming a second intermediate layer located on the second surface of the substrate, and in the first non-magnetic layer forming step, the first non-magnetic layer may be formed on the second intermediate layer.

[0031] A fourteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to any one of the eleventh to thirteenth aspects: The first nonmagnetic layer may contain silicon oxide or silicon nitride.

[0032] A fifteenth aspect of the present disclosure is a method for manufacturing a mask, comprising: a substrate preparation step of preparing a substrate including a substrate first surface and a substrate second surface located opposite the substrate first surface; a first non-magnetic layer formation step of forming a first non-magnetic layer facing the substrate second surface and including a plurality of through holes; an insulating layer formation step of forming an insulating layer including a plurality of insulating portions that overlap the plurality of through holes in the first non-magnetic layer in a planar view; a magnetic layer formation step of forming a magnetic layer in gaps between the plurality of insulating portions; an insulating layer removal step of removing the plurality of insulating portions; and a substrate processing step of forming first openings in the substrate that overlap the plurality of through holes in the first non-magnetic layer in a planar view.

[0033] A sixteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to the fifteenth aspect described above: The method for manufacturing a mask may include a step of forming an intermediate layer located on the second surface of the substrate and containing a metal, and in the insulating layer forming step, the insulating layer may be formed on the intermediate layer.

[0034] A seventeenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to the fifteenth or sixteenth aspect described above: The second nonmagnetic layer may contain silicon oxide or silicon nitride.

[0035] An eighteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to any one of the eleventh to seventeenth aspects: The substrate may contain silicon or a silicon compound.

[0036] A nineteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to any one of the eleventh to eighteenth aspects: The insulating layer removing step may be performed such that the insulating layer remains in a position that does not overlap the first opening in a plan view.

[0037] A twentieth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask according to the nineteenth aspect: The insulating layer remaining after the insulating layer removing step may include a plurality of insulating portions distributed in a planar direction of the second surface of the substrate.

[0038] An embodiment of the present disclosure will be described in detail with reference to the drawings. The following embodiment is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0039] An organic device 100 including an organic layer formed by using a mask will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0040] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along an in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0041] The element 115 may include a first electrode 120 , an organic layer 130 located on the first electrode 120 , and a second electrode 140 located on the organic layer 130 .

[0042] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120. "Planar view" means viewing an object along the normal direction to the surface of a plate-like member such as the substrate 110.

[0043] The substrate 110 may be made of an insulating material. Materials that can be used for the substrate 110 include, for example, inflexible materials such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of silicon wafers used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment used in semiconductor manufacturing processes. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using equipment used in semiconductor manufacturing processes.

[0044] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140 or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0045] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0046] The organic layer 130 includes an organic material. When the organic layer 130 is energized, the organic layer 130 can perform some function. "Electrification" means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be, for example, a light-emitting layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may include an organic semiconductor material.

[0047] 1 , the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0048] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0049] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0050] The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof. As shown in FIG. 1 , the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0051] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Fig. 2 is a diagram showing a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process for depositing a vapor deposition material on an object.

[0052] 2 , the vapor deposition apparatus 10 may include therein a vapor deposition source 6, a heater 8, and a mask 20. The vapor deposition apparatus 10 may further include an exhaust unit for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7 such as an organic material or a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 under a vacuum atmosphere.

[0053] The mask 20 includes an incident surface 201, an exit surface 202, a first opening 31, and a second opening 41. The incident surface 201 faces the vapor deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. The first opening 31 is located on the incident surface 201. The second opening 41 is located on the exit surface 202. The first opening 31 and the second opening 41 are connected in the thickness direction of the mask 20. A plurality of second openings 41 overlap one first opening 31 in a plan view. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the first opening 31 and the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110 .

[0054] As shown in FIG. 2 , the deposition apparatus 10 may include a magnet 5 arranged to face the second surface 112 of the substrate 110. When the mask 20 includes a magnetic material, the magnet 5 can attract the mask 20 toward the substrate 110 by magnetic force. As a result, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. As a result, the occurrence of a shadow during the deposition process can be suppressed. In this application, a shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, or the like.

[0055] Next, the mask 20 will be described in detail. Fig. 3 is a plan view showing an example of the mask 20 when viewed from the incident surface 201 side. Fig. 4 is a plan view showing an example of the mask 20 when viewed from the exit surface 202 side. Fig. 5 is a cross-sectional view taken along line V-V of the mask 20 in Fig. 3.

[0056] As shown in FIG. 5 , the mask 20 includes a substrate 30 and a laminate 40 .

[0057] The substrate 30 includes a substrate first surface 301, a substrate second surface 302, a first opening 31, and a first wall surface 32. The substrate first surface 301 may constitute the incident surface 201. The substrate second surface 302 is located on the opposite side of the substrate first surface 301. The first wall surface 32 is located between the substrate first surface 301 and the substrate second surface 302. The first wall surface 32 faces the first opening 31.

[0058] The first opening 31 penetrates the substrate 30 from the substrate first surface 301 to the substrate second surface 302. As shown in Fig. 3 , the substrate 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are directions parallel to the substrate first surface 301.

[0059] One first opening 31 may correspond to one screen of the organic EL display device. The mask 20 including multiple first openings 31 can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in Figure 3, the first opening 31 may have a rectangular outline in a plan view.

[0060] The first wall surface 32 faces the first opening 31. In the example shown in Figure 5, the first wall surface 32 extends along the normal direction of the first surface 301 of the substrate.

[0061] As shown in Fig. 3 , the region of the substrate 30 where the first openings 31 are not formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is a region located between two adjacent first openings 31 in a plan view. The outer region 35 is a region located between an outer edge 303 of the substrate 30 and the first openings 31 in a plan view. As shown in Fig. 3 , the inner region 36 may extend in a first direction D1 and a second direction D2.

[0062] 3 and 4 , the substrate 30 may include an alignment mark 39. The alignment mark 39 is formed, for example, on the second surface 302 of the substrate. The alignment mark 39 may also be formed on the first surface 301 of the substrate. The alignment mark 39 is used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has a property of transmitting visible light, the alignment mark 39 can be seen through the substrate 110.

[0063] 3 and 4, the alignment mark 39 may have a cross-shaped outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a cross, such as a rectangle or a circle. The alignment mark 39 may be located in the outer region 35 or the inner region 36.

[0064] The shape of the alignment mark 39 in the cross-sectional view is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 or the second surface 302 of the substrate. The alignment mark 39 may include a hole penetrating from the first surface 301 to the second surface 302 of the substrate. The recess and hole may be formed by etching the first surface 301 or the second surface 302 of the substrate. The recess and hole may be formed by irradiating the first surface 301 or the second surface 302 of the substrate with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 or the second surface 302 of the substrate. The layer is formed of a material different from that of the substrate 30. The alignment mark 39 may be formed in a layer other than the substrate 30.

[0065] The substrate 30 includes silicon or a silicon compound. The substrate 30 is produced, for example, by processing a silicon wafer. As shown in FIG. 3 , the outer edge 303 of the substrate 30 may include a linear portion. The linear portion is also referred to as an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also referred to as a notch. The orientation flat and the notch represent the crystal orientation of the silicon wafer.

[0066] The maximum dimension S1 of the substrate 30 in a plan view is, for example, 100 mm or more, or may be 150 mm or more, or may be 200 mm or more. The dimension S1 is, for example, 500 mm or less, or may be 400 mm or less, or may be 300 mm or less.

[0067] The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged is, for example, 5 mm or more, or may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, or may be 50 mm or less, or may be 30 mm or less.

[0068] The distance S3 between two first openings 31 in the direction in which the first openings 31 are arranged is, for example, 0.1 mm or more, or may be 0.5 mm or more, or 1.0 mm or more. The distance S3 is, for example, 20 mm or less, or may be 15 mm or less, or may be 10 mm or less.

[0069] The thickness of the substrate 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 is, for example, 50 μm or more, or may be 100 μm or more, or may be 200 μm or more. The thickness T1 is, for example, 1000 μm or less, or may be 800 μm or less, or may be 600 μm or less.

[0070] Next, the laminate 40 will be described. As shown in Fig. 5 , the laminate 40 includes a first surface 401 and a second surface 401. The first surface 401 faces the second substrate surface 302 of the substrate 30 or the first opening 31. The second surface 402 is located on the opposite side of the first surface 401 in the thickness direction of the substrate 30.

[0071] The laminate 40 includes a plurality of through-hole groups 41A aligned along the substrate first surface 301. For example, the plurality of through-hole groups 41A may be aligned in the first direction D1 and the second direction D2, similar to the plurality of first openings 31. The through-hole groups 41A overlap the first openings 31 in a plan view. One through-hole group 41A may overlap one first opening 31.

[0072] Each through hole group 41A includes a plurality of second openings 41. The plurality of second openings 41 in one through hole group 41A may overlap one first opening 31 in plan view. As shown in FIG. 5 , each second opening 41 penetrates the stack 40 from the first surface 401 to the second surface 402.

[0073] One second opening 41 corresponds to one vapor deposition layer. One vapor deposition layer is, for example, one organic layer 130. A group of the second openings 41 included in one through-hole group 41A may correspond to one screen of the organic EL display device.

[0074] As shown in FIGS. 4 and 5 , the laminate 40 may include a pattern region 42, a peripheral region 43, and an outer edge region 44 in a plan view. In other words, the laminate 40 may be partitioned into a plurality of pattern regions 42, peripheral regions 43, and outer edge regions 44 in a plan view. The pattern region 42 is a region including a plurality of second openings 41 overlapping the first openings 31 in a plan view. One pattern region 42 may correspond to one through-hole group 41A. The peripheral region 43 is a region surrounding the pattern region 42 in a plan view. One peripheral region 43 may surround a plurality of pattern regions 42. The outer edge region 44 is a region surrounding the peripheral region 43 in a plan view. The outer edge region 44 may be located at the outer edge 403 of the laminate 40. The outer edge region 44 may extend around the entire circumference along the outer edge 403 of the laminate 40.

[0075] The layer structure of the laminate 40 will be described. The laminate 40 includes at least a magnetic layer 50 and a non-magnetic layer. The magnetic layer 50 includes a magnetic metal as a main component. The non-magnetic layer does not include a magnetic metal as a main component. For example, the non-magnetic layer includes an insulating inorganic material such as silicon oxide or silicon nitride as a main component. A main component refers to a material that accounts for 51% or more by weight of the layer.

[0076] During the deposition process, the magnetic layer 50 is attracted toward the substrate by the magnetic force of the magnet 5. When the mask 20 includes the magnetic layer 50, the gap between the mask 20 and the substrate 110 is reduced. On the other hand, when the mask 20 includes the magnetic layer 50, the position or size of the openings formed in the magnetic layer 50 is likely to change. For example, when the temperature of the mask 20 changes, the position or size of the openings in the magnetic layer 50 may change. The cause of this change is thought to be the high thermal expansion coefficient of the magnetic layer 50.

[0077] In consideration of these issues, this embodiment proposes that the pattern region 42 of the laminate 40 includes a non-magnetic layer that overlaps the magnetic layer 50 in a planar view. The non-magnetic layer is a layer that suppresses changes in the magnetic layer 50 due to temperature changes and the like. The non-magnetic layer contains, as a main component, an insulating inorganic material such as silicon oxide or silicon nitride. The non-magnetic layer may have a thermal expansion coefficient that is smaller than that of the magnetic layer 50.

[0078] The non-magnetic layer is located between the magnetic layer 50 and the first surface 401 or between the magnetic layer 50 and the second surface 402. In this embodiment, an example in which the non-magnetic layer is located between the magnetic layer 50 and the first surface 401 will be described. The non-magnetic layer located between the magnetic layer 50 and the first surface 401 is also referred to as a first non-magnetic layer and is represented by the reference numeral 56. The second opening 41 described above penetrates the magnetic layer 50 and the first non-magnetic layer 56.

[0079] 5 , the pattern region 42 may include a first intermediate layer 61 located between the first non-magnetic layer 56 and the magnetic layer 50. The second opening 41 may penetrate the magnetic layer 50, the first non-magnetic layer 56, and the first intermediate layer 61.

[0080] 5 , the surrounding region 43 and the outer edge region 44 may also include a first non-magnetic layer 56 and a first intermediate layer 61. The first non-magnetic layer 56 and the first intermediate layer 61 located in the surrounding region 43 and the outer edge region 44 may not include through holes. For example, the first non-magnetic layer 56 and the first intermediate layer 61 located in the surrounding region 43 and the outer edge region 44 may extend without any gaps. The surrounding region 43 and the outer edge region 44 may also include a second intermediate layer 62 located between the first non-magnetic layer 56 and the substrate second surface 302.

[0081] 5, the peripheral region 43 may include a protruding portion that overlaps the first opening 31 in a plan view. The protruding portion may not include the second intermediate layer 62. Symbol S5 represents the dimension of the protruding portion in a plan view. The dimension S5 is defined along an imaginary line that extends in the first direction D1 and passes through the center points of the multiple second openings 41 in a plan view. The dimension S5 may be larger than a dimension R, described below, of the second opening 41.

[0082] 5 , the outer edge region 44 may include an insulating layer 65. The insulating layer 65 may be located on the same plane as the magnetic layer 50. For example, the insulating layer 65 and the magnetic layer 50 may both be located on the first intermediate layer 61. The insulating layer 65 may include a side surface that faces the side surface of the magnetic layer 50 along the surface direction of the substrate second surface 302. The side surface of the insulating layer 65 may be in contact with the side surface of the magnetic layer 50.

[0083] The pattern region 42, the surrounding region 43 and the outer edge region 44 will now be described in detail.

[0084] 6 is a cross-sectional view showing an example of the pattern region 42. A first surface 401 of the pattern region 42 may be formed of the first non-magnetic layer 56. A second surface 402 of the pattern region 42 may be formed of the magnetic layer 50.

[0085] 6, the symbol S11 represents the dimension of the magnetic layer 50 at the bottom surface. The "bottom surface" refers to the surface facing the first surface 401 in the thickness direction. The symbol S12 represents the dimension of the magnetic layer 50 at the top surface. The "top surface" represents the surface facing the second surface 402 in the thickness direction. The symbol R represents the dimension of the second openings 41 at the second surface 402. The dimensions S11, S12, and R are defined along an imaginary line that extends in the first direction D1 and passes through the center points of the multiple second openings 41 in a planar view.

[0086] The dimension S12 may be larger than the dimension S11. In other words, the dimension R of the second opening 41 on the upper surface of the magnetic layer 50 may be smaller than the dimension of the second opening 41 on the lower surface of the magnetic layer 50. By making the dimension of the second opening 41 on the lower surface of the magnetic layer 50 larger than the dimension R, it is possible to suppress the occurrence of a shadow near the side surface of the magnetic layer 50.

[0087] The dimension R is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 3.0 μm or more. The dimension R is, for example, 25.0 μm or less, may be 10.0 μm or less, or may be 5.0 μm or less.

[0088] The dimension S12 is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 3.0 μm or more. The dimension S12 is, for example, 25.0 μm or less, may be 10.0 μm or less, or may be 5.0 μm or less.

[0089] 6, the side surface of the magnetic layer 50 may include a tapered surface 53 that slopes away from the center of the second opening 41 as it moves from the upper surface to the lower surface of the magnetic layer 50. By including the tapered surface 53 on the side surface of the magnetic layer 50, the dimension S12 can be made larger than the dimension S11.

[0090] 6, the symbol S6 denotes the width of the tapered surface 53. The width S6 is, for example, 0.2 μm or more, may be 0.5 μm or more, or may be 1.0 μm or more. The width S6 is, for example, 10.0 μm or less, may be 5.0 μm or less, or may be 3.0 μm or less.

[0091] 6, the symbol θ1 represents the angle formed between the side surface and the top surface of the magnetic layer 50. The angle θ1 is, for example, 50° or more, or may be 55° or more, or 60° or more. The angle θ1 is, for example, less than 90°, or may be 85° or less, or may be 80° or less.

[0092] 6 , symbol S13 represents the dimension of the first non-magnetic layer 56 at the bottom surface. Symbol S14 represents the dimension of the first intermediate layer 61 at the bottom surface. Dimensions S13 and S14 may be smaller than dimension S12 of the top surface of the magnetic layer 50. The smaller dimensions S13 and S14 are, the more the shadow caused by the first non-magnetic layer 56 and the first intermediate layer 61 is suppressed. Dimensions S13 and S14 and the width S6 described above are defined along an imaginary line that extends in the first direction D1 and passes through the center points of the multiple second openings 41 in a plan view.

[0093] The thickness T10 of the pattern region 42 is smaller than the thickness of the substrate 30. The thickness T10 is, for example, 25.0 μm or less, or may be 10.0 μm or less, or may be 5.0 μm or less. This makes it possible to suppress the occurrence of shadows. The thickness T10 is, for example, 1.0 μm or more, or may be 2.0 μm or more, or may be 3.0 μm or more.

[0094] The magnetic layer 50 includes a magnetic metal, such as nickel, iron, cobalt, or an alloy thereof.

[0095] The thickness T11 of the magnetic layer 50 is, for example, 10.0 μm or less, and may be 5.0 μm or less, or 3.0 μm or less. By making the thickness T11 of the magnetic layer 50 10.0 μm or less, the occurrence of shadows can be suppressed. The thickness T11 is, for example, 0.5 μm or more, and may be 1.0 μm or more, or 2.0 μm or more. By making the thickness T11 of the magnetic layer 50 0.5 μm or more, the occurrence of defects such as pinholes, deformation, etc. in the magnetic layer 50 can be suppressed.

[0096] The first non-magnetic layer 56 is made of a non-magnetic material that does not have magnetic properties, and contains, as a main component, an inorganic material that has insulating properties, such as silicon oxide or silicon nitride.

[0097] The thickness T13 of the first nonmagnetic layer 56 is, for example, 50 nm or more, or may be 100 nm or more, or 200 nm or more. The thickness T13 is, for example, 1000 nm or less, or may be 700 nm or less, or may be 500 nm or less.

[0098] The thickness T13 of the first non-magnetic layer 56 may be determined relative to the thickness T11 of the magnetic layer 50 so as to suppress changes in the magnetic layer 50. The ratio T13 / T11 of the thickness T13 of the first non-magnetic layer 56 to the thickness T11 of the magnetic layer 50 is, for example, 0.05 or more, 0.10 or more, or 0.15 or more. T13 / T11 is, for example, 0.50 or less, 0.40 or less, or 0.30 or less.

[0099] As described below, the first intermediate layer 61 may function as a seed layer for forming the magnetic layer 50 by electrolytic plating. The first intermediate layer 61 may contain a metal. Examples of metals include nickel, copper, titanium, aluminum, and alloys thereof. The first intermediate layer 61 may be composed of a single layer or multiple layers. For example, the first intermediate layer 61 may include a first layer containing titanium and a second layer containing nickel or copper located between the first layer and the magnetic layer 50.

[0100] The thickness T14 of the first intermediate layer 61 is, for example, 20 nm or more, or may be 50 nm or more, or 100 nm or more. The thickness T14 is, for example, 500 nm or less, or may be 300 nm or less, or may be 200 nm or less.

[0101] 7 is a cross-sectional view showing an example of the surrounding region 43. A first surface 401 of the surrounding region 43 may be formed by the second intermediate layer 62. A second surface 402 of the surrounding region 43 may be formed by the magnetic layer 50.

[0102] As described below, the second intermediate layer 62 may function as an etching stop layer in the step of processing the substrate 30 by etching. Specifically, the second intermediate layer 62 is resistant to an etchant that etches the substrate 30. The second intermediate layer 62 may contain a metal such as aluminum, an aluminum alloy, titanium, or a titanium alloy. The aluminum alloy contains, for example, aluminum and neodymium. The second intermediate layer 62 may also contain an inorganic compound such as silicon oxide.

[0103] The thickness T15 of the second intermediate layer 62 is not particularly limited as long as it can prevent the first intermediate layer 61 and the magnetic layer 50 from being etched during the process of processing the substrate 30. For example, the thickness of the second intermediate layer 62 may be smaller than the thickness of the magnetic layer 50. The thickness T15 of the second intermediate layer 62 is, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness T15 is, for example, 10.0 μm or less, 5.0 μm or less, 1.0 μm or less, 300 nm or less, or 150 nm or less. The higher the resistance of the second intermediate layer 62 to the etchant used for the substrate 30, the smaller the thickness T15 of the second intermediate layer 62 can be.

[0104] 8 is a cross-sectional view showing an example of the outer edge region 44. A first surface 401 of the outer edge region 44 may be formed by the second intermediate layer 62. A second surface 402 of the outer edge region 44 may be formed by the insulating layer 65.

[0105] The insulating layer 65 may be configured to have different stress properties from the magnetic layer 50. For example, if the magnetic layer 50 applies tensile stress to the substrate 30, the insulating layer 65 may be configured to apply compressive stress to the substrate 30. In this case, the insulating layer 65 can at least partially cancel out the force that the magnetic layer 50 exerts on the substrate 30. This can prevent the mask 20 from warping.

[0106] The material of the insulating layer 65 may be selected so that the insulating layer 65 has different stress properties from the magnetic layer 50. The material of the insulating layer 65 has insulating properties. For example, the insulating layer 65 includes an oxide having insulating properties. The oxide is, for example, silicon oxide.

[0107] The numerical range of the thickness of the insulating layer 65 may be the same as the above-mentioned numerical range of the thickness T11 of the magnetic layer 50. The thickness of the insulating layer 65 may be the same as the thickness T11 of the magnetic layer 50.

[0108] The thickness of each layer, the dimensions of each component, the width, etc. are measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

[0109] Next, a method for manufacturing the mask 20 will be described. First, a substrate preparation step is performed to prepare a substrate 30. A silicon wafer may be used as the substrate 30. The first substrate surface 301 and the second substrate surface 302 of the substrate 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first substrate surface 301 and the second substrate surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first substrate surface 301 and the second substrate surface 302 may be (100), (110), or the like.

[0110] 9, a second intermediate layer 62 is formed on the second substrate surface 302 of the substrate 30. The second intermediate layer 62 may be formed on the entire second substrate surface 302. The second intermediate layer 62 may be formed by a physical film formation method such as sputtering, vapor deposition, or ion plating.

[0111] 10, a first non-magnetic layer forming step is carried out to form the first non-magnetic layer 56. In the first non-magnetic layer forming step shown in FIG. 10, the first non-magnetic layer 56 is formed on the second intermediate layer 62. The first non-magnetic layer 56 may be formed by chemical vapor deposition. For example, when the first non-magnetic layer 56 contains silicon oxide, the first non-magnetic layer 56 may be formed by chemical vapor deposition using tetraethyl silicate Si(OC ２ H ５ ) ４ The silicon dioxide may be formed by chemical vapor deposition using Tetraethyl Silicate (TEOS).

[0112] Next, a plurality of through holes 561 are formed in the first non-magnetic layer 56. Figures 11A and 11B are a cross-sectional view and a plan view showing the first non-magnetic layer 56 in which the plurality of through holes 561 are formed. The plurality of through holes 561 may be aligned in the first direction D1 and the second direction D2. The arrangement of the plurality of through holes 561 corresponds to the arrangement of the plurality of second openings 41 of the stack 40 in a plan view.

[0113] There are no particular limitations on the method for forming the through-holes 561 in the first non-magnetic layer 56. For example, the through-holes 561 may be formed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0114] Next, a step of forming a first intermediate layer 61 is carried out. Figures 12A and 12B are a cross-sectional view and a plan view showing the first intermediate layer 61. In the example shown in Figures 12A and 12B, the first intermediate layer 61 is formed on the first non-magnetic layer 56. The first intermediate layer 61 may cover the first non-magnetic layer 56 and the plurality of through holes 561. The first intermediate layer 61 may be formed by a physical film formation method such as sputtering, vapor deposition, or ion plating.

[0115] Subsequently, an insulating layer forming step is performed to form an insulating layer 65 on the first intermediate layer 61. The insulating layer 65 may be formed by chemical vapor deposition. For example, when the insulating layer 65 contains silicon oxide, the insulating layer 65 may be formed by chemical vapor deposition using tetraethyl silicate Si(OC ２ H ５ ) ４ It may be formed by chemical vapor deposition using as a raw material.

[0116] In the insulating layer forming step, an insulating opening 66 is formed in the insulating layer 65. Figures 13A and 13B are a cross-sectional view and a plan view showing the insulating layer 65 in which the insulating opening 66 is formed.

[0117] 13A and 13B , the insulating layer 65 may include a plurality of insulating portions 651 arranged in the surface direction of the substrate 30. The insulating layer 65 is divided into a plurality of portions by the insulating openings 66, thereby forming the plurality of insulating portions 651. As shown in FIG. 13A , the plurality of insulating portions 651 may overlap a plurality of through holes 561 in the first non-magnetic layer 56 in a planar view. One insulating portion 651 may overlap a single through hole 561. The arrangement of the plurality of insulating portions 651 corresponds to the arrangement of the plurality of second openings 41 in the stack 40 in a planar view. Through holes in the magnetic layer 50 are formed at the positions of the insulating portions 651.

[0118] There are no particular limitations on the method for forming the insulating opening 66 in the insulating layer 65. For example, the insulating opening 66 may be formed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0119] As shown in FIGS. 13A and 13B, the insulating layer 65 may include, in addition to a plurality of insulating portions 651, a portion located along the outer edge of the base material 30 in a plan view.

[0120] Subsequently, a magnetic layer forming step is performed to form the magnetic layer 50. In the magnetic layer forming step, the magnetic layer 50 is formed in the gaps between the insulating portions 651, i.e., in the insulating openings 66, as shown in FIG.

[0121] The magnetic layer formation process may include a plating process. That is, the magnetic layer 50 may be formed by a plating process. The plating process may be an electrolytic plating process or an electroless plating process. When the electrolytic plating process is performed, the first intermediate layer 61 functions as a seed layer. When the electrolytic plating process is performed, holes, notches, etc. for supplying current to the first intermediate layer 61 may be formed in the insulating layer 65 located on the outer edge of the substrate 30.

[0122] In the plating process, a plating solution containing ions of the metal that constitutes the magnetic layer 50 is supplied to the gaps between the insulating portions 651. As a result, the magnetic layer 50 is formed in the gaps between the insulating portions 651. FIG. 14B is a cross-sectional view showing an example of the magnetic layer 50. The magnetic layer 50 may protrude above the upper surface of the insulating layer 65 in the thickness direction of the substrate 30. That is, the upper surface of the magnetic layer 50 may be located above the upper surface of the insulating layer 65.

[0123] 14B , the top surface of the first intermediate layer 61 may include a step caused by the first nonmagnetic layer 56. The insulating portion 651 of the insulating layer 65 may overlap the step on the top surface of the first intermediate layer 61.

[0124] The magnetic layer formation process may include an annealing process in which the magnetic layer 50 is heated. The annealing process can reduce strain that has occurred inside the magnetic layer 50. In the annealing process, the substrate 30, the magnetic layer 50, the first non-magnetic layer 56, and the insulating layer 65 are maintained in an environment at a temperature higher than room temperature. The temperature in the annealing process is, for example, 120°C or higher, or may be 140°C or higher, or 150°C or higher. The temperature in the annealing process is, for example, 250°C or lower, or may be 220°C or lower, or may be 200°C or lower.

[0125] Subsequently, a polishing step may be performed, in which the portion of the magnetic layer 50 that protrudes above the upper surface of the insulating layer 65 is polished. Figure 15 is a cross-sectional view showing the polished magnetic layer 50.

[0126] The polishing step may polish the magnetic layer 50 by chemical mechanical polishing. The polishing step may be performed until the polishing surface of the polishing tool reaches the upper surface of the insulating layer 65 in the thickness direction. As a result, the upper surface of the magnetic layer 50 is positioned on the same plane as the upper surface of the insulating layer 65. For example, the distance in the thickness direction of the substrate 30 between the position of the upper surface of the magnetic layer 50 and the position of the upper surface of the insulating layer 65 is 0.10 μm or less.

[0127] Subsequently, an insulating layer removing step is performed to remove a portion of the insulating layer 65. In the insulating layer removing step, as shown in Fig. 16, a first protective layer 71 may be formed to cover the insulating layer 65 located along the outer edge of the substrate 30. The first protective layer 71 may not cover the multiple insulating portions 651 that overlap the multiple through holes 561 of the first non-magnetic layer 56. The first protective layer 71 may not cover the magnetic layer 50.

[0128] The first protective layer 71 is resistant to the etching solution used to remove the insulating layer 65. For example, when the etching solution contains buffered hydrofluoric acid, the first protective layer 71 contains a resin resistant to hydrofluoric acid. For example, the first protective layer 71 contains a photoresist resistant to hydrofluoric acid. The photoresist may contain polyimide or the like. The buffered hydrofluoric acid solution is a solution containing hydrofluoric acid and ammonium fluoride.

[0129] In the insulating layer removal step, an etching solution such as a buffered hydrofluoric acid solution is supplied toward the insulating layer 65. The etching solution removes a plurality of insulating portions 651 that are not covered by the first protective layer 71, as shown in FIG. 17 . As a result, a plurality of through holes 501 are formed in the magnetic layer 50, which overlap the through holes 561 in the first non-magnetic layer 56 in a plan view.

[0130] Next, a substrate processing step is performed to form first openings 31 in the substrate 30. In the substrate processing step, a resist layer 38 may be formed partially on the substrate first surface 301, as shown in Fig. 18 . A resist opening 381 is formed in a portion of the resist layer 38 that corresponds to the first opening 31. As shown in Fig. 18 , a second protective layer 72 may be formed to cover the magnetic layer 50 and the insulating layer 65.

[0131] The resist layer 38 may be a photoresist. In this case, the resist layer 38 is formed on the first substrate surface 301 by first coating the first substrate surface 301 with a liquid resist material. After coating, a step of heating the resist layer 38 may be performed. Subsequently, a photolithography process is performed in which the resist layer 38 is exposed and developed. As a result, resist openings 381 can be formed in the resist layer 38.

[0132] Although not shown, the resist layer 38 may be a silicon oxide film partially formed on the first surface 301 of the substrate. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301 of the substrate. The silicon oxide film may be formed on the substrate 30 before the intermediate layer 60 is laminated on the substrate 30.

[0133] Subsequently, in the substrate processing step, as shown in FIG. 19 , the substrate 30 is etched from the substrate first surface 301 side to form a first opening 31 in the substrate 30. The etching may be dry etching using an etching gas. Since the second intermediate layer 62 is resistant to the etchant, as shown in FIG. 19 , the etching can be prevented from progressing to the first intermediate layer 61 and the magnetic layer 50. The etching gas may be, for example, SF ６ It's gas.

[0134] 20 , a second intermediate layer removal step is performed to remove a portion of the second intermediate layer 62. The second intermediate layer removal step is performed by supplying an etchant for the second intermediate layer 62 to the first opening 31. The second intermediate layer removal step removes the second intermediate layer 62 that overlaps the first opening 31 in plan view. The second intermediate layer 62 may be removed by dry etching using a fluorine-based gas or the like, or by wet etching using an acidic etching solution.

[0135] 21 , a first intermediate layer removal step is performed to remove a portion of the first intermediate layer 61. The first intermediate layer removal step is performed by supplying an etchant for the first intermediate layer 61 to the first opening 31. The first intermediate layer removal step removes the first intermediate layer 61 that overlaps the first opening 31 in a plan view but does not overlap the first nonmagnetic layer 56. As a result, a plurality of through holes 611 are formed in the first intermediate layer 61 that overlap the through holes 561 of the first nonmagnetic layer 56 and the through holes 501 of the magnetic layer 50 in a plan view.

[0136] Furthermore, a resist removal step of removing the resist layer 38 and a second protective layer removal step of removing the second protective layer 72 are performed. The order of the resist removal step, the second protective layer removal step, and the intermediate layer removal step is not particularly limited. Fig. 22 is a cross-sectional view showing a state after the resist removal step and the second protective layer removal step have been performed.

[0137] When the resist layer 38 is a photoresist, a resist processing solution containing N-methyl-2-pyrrolidone may be supplied toward the resist layer 38. The resist layer 38 may be removed by irradiating the resist layer 38 with oxygen plasma. When the resist layer 38 is a silicon oxide film, a resist processing solution containing hydrofluoric acid may be supplied toward the resist layer 38. CF ４ The resist layer 38 may be removed by dry etching using gas or the like.

[0138] 22 , the mask 20 includes a second opening 41 that penetrates the stack 40. The stack 40 includes at least a magnetic layer 50 and a first non-magnetic layer 56 stacked on the magnetic layer 50 at a position that overlaps the first opening 31 in a plan view. The first non-magnetic layer 56 can suppress changes in the magnetic layer 50 due to temperature changes and the like. Therefore, changes in the position or dimensions of the second opening 41 in the stack 40 due to temperature changes and the like are suppressed.

[0139] The above-described embodiment can be modified in various ways. Below, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in modified examples, the description of those effects may be omitted.

[0140] (First Modification) An example in which the magnetic layer forming step includes a physical film forming step will be described.

[0141] 23 is a cross-sectional view showing an example of the pattern region 42 of the mask 20 in the first modified example. The magnetic layer 50 may include a first layer 51 and a second layer 52.

[0142] The first layer 51 is formed by a physical film formation process such as sputtering. The second layer 52 is formed by a plating process. For example, the second layer 52 is formed by an electrolytic plating process. In this case, the first layer 51 functions as a seed layer.

[0143] The material of the first layer 51 may be the same as the material of the second layer 52. For example, both the first layer 51 and the second layer 52 may contain nickel as a main component. Alternatively, the material of the first layer 51 may be different from the material of the second layer 52.

[0144] A method for manufacturing the mask 20 in the first modified example will now be described. The steps for forming the second intermediate layer 62, the first nonmagnetic layer 56, and the first intermediate layer 61 on the substrate 30 are the same as those in the above-described embodiment. Therefore, a description of these steps will be omitted.

[0145] 24 is a cross-sectional view showing an insulating layer forming step of forming an insulating layer 65 on the first intermediate layer 61. The insulating layer 65 includes a plurality of insulating portions 651.

[0146] 25 is a cross-sectional view showing a physical film formation process for forming the first layer 51. The first layer 51 is formed, for example, on the upper and side surfaces of the insulating layer 65 and on the upper surface of the first intermediate layer 61 located in the insulating opening 66.

[0147] 26 is a cross-sectional view showing a plating step for forming the second layer 52. The second layer 52 is formed on the first layer 51.

[0148] 27 is a cross-sectional view showing the polishing step. The polishing step may be performed until the polishing surface of the polishing tool reaches the upper surface of the insulating layer 65 in the thickness direction. As a result, the upper surface of the magnetic layer 50 is positioned on the same plane as the upper surface of the insulating layer 65. The magnetic layer 50 includes a second layer 52 and a first layer 51 positioned between the second layer 52 and the insulating layer 65 and first intermediate layer 61.

[0149] Subsequently, the steps of removing a portion of the insulating layer 65, the step of removing a portion of the base material 30, the step of removing a portion of the second intermediate layer 62, and the step of removing a portion of the first intermediate layer 61 are carried out. These steps are the same as those in the above-described embodiment, and therefore, a description of these steps will be omitted.

[0150] Although not shown, the magnetic layer 50 may be formed solely by a physical film formation process such as sputtering. In this case, the physical film formation process may be carried out until the upper surface of the magnetic layer 50 formed in the insulating opening 66 by the physical film formation process reaches a position higher than the upper surface of the insulating layer 65. Thereafter, a polishing process may be carried out.

[0151] 28 is a cross-sectional view showing an example of a pattern region 42 according to a second modification. The pattern region 42 may include a second non-magnetic layer 57 located between the magnetic layer 50 and the second surface 402. The second opening 41 may penetrate the first non-magnetic layer 56, the first intermediate layer 61, the magnetic layer 50, and the second non-magnetic layer 57. The first surface 401 of the pattern region 42 may be formed by the first non-magnetic layer 56. The second surface 402 of the pattern region 42 may be formed by the second non-magnetic layer 57.

[0152] 28, symbol S15 represents the dimension of the upper surface of the second non-magnetic layer 57. Dimension S15 may be smaller than dimension S12 of the upper surface of the magnetic layer 50. The smaller dimension S15 is, the more the shadow caused by the second non-magnetic layer 57 is suppressed.

[0153] The second non-magnetic layer 57 is made of a non-magnetic material that does not have magnetic properties, similar to the first non-magnetic layer 56. The second non-magnetic layer 57 contains, as a main component, an inorganic material that has insulating properties, such as silicon oxide or silicon nitride.

[0154] The thickness T16 of the second nonmagnetic layer 57 is, for example, 50 nm or more, or may be 100 nm or more, or 200 nm or more. The thickness T16 is, for example, 1000 nm or less, or may be 700 nm or less, or may be 500 nm or less.

[0155] The thickness T16 of the second non-magnetic layer 57 may be determined relative to the thickness T11 of the magnetic layer 50 so as to suppress changes in the magnetic layer 50. The ratio T16 / T11 of the thickness T16 of the second non-magnetic layer 57 to the thickness T11 of the magnetic layer 50 is, for example, 0.05 or more, 0.10 or more, or 0.15 or more. T16 / T11 is, for example, 0.50 or less, 0.40 or less, or 0.30 or less.

[0156] A method for manufacturing the mask 20 in the second modified example will now be described. The steps of forming the second intermediate layer 62, the first non-magnetic layer 56, the first intermediate layer 61, the insulating layer 65, and the magnetic layer 50 on the substrate 30, as well as the polishing step, are the same as those in the above-described embodiment. Therefore, a description of these steps will be omitted.

[0157] 29 is a cross-sectional view showing a second non-magnetic layer forming step of forming a second non-magnetic layer 57 on the magnetic layer 50 and the insulating layer 65. The second non-magnetic layer 57 may be formed by chemical vapor deposition, similar to the first non-magnetic layer 56. For example, when the second non-magnetic layer 57 contains silicon oxide, the second non-magnetic layer 57 may be formed by chemical vapor deposition using tetraethyl silicate Si(OC ２ H ５ ) ４ It may be formed by chemical vapor deposition using as a raw material.

[0158] 30 , a plurality of through holes 571 are formed in the second non-magnetic layer 57. The plurality of through holes 571 may be aligned in the first direction D1 and the second direction D2. The arrangement of the plurality of through holes 571 corresponds to the arrangement of the plurality of second openings 41 of the stack 40 in a plan view. The plurality of through holes 571 in the second non-magnetic layer 57 may overlap the plurality of through holes 561 in the first non-magnetic layer 56, respectively, in a plan view.

[0159] There are no particular limitations on the method for forming the through-holes 571 in the second nonmagnetic layer 57. For example, the through-holes 571 may be formed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0160] The steps of removing a portion of the insulating layer 65, the step of removing a portion of the base material 30, the step of removing a portion of the second intermediate layer 62, and the step of removing a portion of the first intermediate layer 61 are the same as those in the above-described embodiment, and therefore, a description of these steps will be omitted.

[0161] In the second modification, the mask 20 includes a second opening 41 that penetrates a stack 40 that includes a first non-magnetic layer 56, a first intermediate layer 61, a magnetic layer 50, and a second non-magnetic layer 57. The first non-magnetic layer 56 and the second non-magnetic layer 57 can suppress changes in the magnetic layer 50 due to temperature changes and the like. Therefore, changes in the position or dimensions of the second opening 41 in the stack 40 due to temperature changes and the like are suppressed.

[0162] 31 is a cross-sectional view showing an example of a pattern region 42 according to a third modified example. The pattern region 42 includes a second non-magnetic layer 57 located between the magnetic layer 50 and the second surface 402, but does not necessarily include the first non-magnetic layer 56. The first surface 401 of the pattern region 42 may be formed by the magnetic layer 50. The second surface 402 of the pattern region 42 may be formed by the second non-magnetic layer 57.

[0163] A method for manufacturing the mask 20 in the third modified example will be described. A process for forming the second intermediate layer 62, the first intermediate layer 61, the insulating layer 65, and the magnetic layer 50 on the substrate 30 is carried out. Subsequently, a polishing process is carried out as shown in FIG.

[0164] 33 , a second non-magnetic layer forming step is performed to form a second non-magnetic layer 57. In the second non-magnetic layer forming step, the second non-magnetic layer 57 is formed on the magnetic layer 50 and the insulating layer 65, as in the second modified example. Then, a plurality of through holes 571 are formed in the second non-magnetic layer 57, as in the second modified example. The plurality of through holes 571 may be aligned in the first direction D1 and the second direction D2. The arrangement of the plurality of through holes 571 corresponds to the arrangement of the plurality of second openings 41 of the stack 40 in a plan view.

[0165] Next, a step of removing a portion of the insulating layer 65, a step of removing a portion of the base material 30, and a step of removing a portion of the second intermediate layer 62 are performed. Next, a step of removing a portion of the first intermediate layer 61 is performed. In a third modified example, the first intermediate layer 61 that overlaps the first opening 31 in plan view may be removed. As a result, the pattern region 42 of the mask 20 shown in FIG. 31 is obtained.

[0166] Although not shown, the mask 20 according to the third modified example may include only either the first intermediate layer 61 or the second intermediate layer 62. Either the first intermediate layer 61 or the second intermediate layer 62 functions as an intermediate layer for stopping etching in the step of processing the substrate 30 by etching.

[0167] 34A and 34B are a cross-sectional view and a plan view showing an example of a mask 20 according to a fourth modification. The peripheral region 43 of the laminate 40 may include an insulating layer 65 located on the same plane as the magnetic layer 50 in the pattern region 42. For example, the lower surface of the insulating layer 65 in the peripheral region 43 may be located on the first intermediate layer 61, similar to the lower surface of the magnetic layer 50 in the pattern region 42. The side surface of the insulating layer 65 in the peripheral region 43 may be in contact with the side surface of the magnetic layer 50. As shown in FIG. 34B , the insulating layer 65 may surround the magnetic layer 50 in the pattern region 42 in a plan view.

[0168] A method for manufacturing the mask 20 in the fourth modified example will now be described. The steps for forming the second intermediate layer 62, the first nonmagnetic layer 56, and the first intermediate layer 61 on the substrate 30 are the same as those in the above-described embodiment. Therefore, a description of these steps will be omitted.

[0169] 35A and 35B are cross-sectional and plan views illustrating an insulating layer forming step of forming an insulating layer 65 on the first intermediate layer 61. The insulating layer 65 includes a plurality of insulating portion groups 65A aligned along the first surface 301 of the substrate. For example, the plurality of insulating portion groups 65A are aligned in the first direction D1 and the second direction D2. Each insulating portion group 65A includes a plurality of insulating portions 651. The insulating layer 65 also includes a portion that surrounds the plurality of insulating portion groups 65A in a plan view.

[0170] Next, a magnetic layer forming process is performed to form a magnetic layer 50 in the gaps between the multiple insulating portions 651. Next, a polishing process, an insulating layer removing process, a process of removing a portion of the base material 30, a process of removing a portion of the second intermediate layer 62, and a process of removing a portion of the first intermediate layer 61 are performed. The insulating layer removing process is performed so that the multiple insulating portion groups 65A are removed, but the portion of the insulating layer 65 that surrounds the multiple insulating portion groups 65A in a planar view remains unremoved. As a result, the mask 20 shown in FIGS. 34A and 34B is obtained.

[0171] By including the insulating layer 65 in the peripheral region 43, the force that the magnetic layer 50 exerts on the substrate 30 is further canceled out by the insulating layer 65. Therefore, the mask 20 can be prevented from warping.

[0172] 36A and 36B are a cross-sectional view and a plan view showing an example of a mask 20 according to a fifth modification. The peripheral region 43 of the laminate 40 may include an insulating layer 65 located on the same plane as the magnetic layer 50 in the pattern region 42. The insulating layer 65 in the peripheral region 43 may include a plurality of insulating portions 651 distributed in the planar direction of the substrate second surface 302. The peripheral region 43 may also include a magnetic layer 50 located in gaps between the plurality of insulating portions 651.

[0173] A method for manufacturing the mask 20 in the fifth modified example will now be described. The steps for forming the second intermediate layer 62, the first nonmagnetic layer 56, and the first intermediate layer 61 on the substrate 30 are the same as those in the above-described embodiment. Therefore, a description of these steps will be omitted.

[0174] 37A and 37B are a cross-sectional view and a plan view showing an insulating layer forming step of forming an insulating layer 65 on the first intermediate layer 61. The insulating layer 65 includes a plurality of insulating portions 651 aligned along the first surface 301 of the substrate. The plurality of insulating portions 651 are distributed in regions corresponding to the pattern region 42 and the peripheral region 43 of the laminate 40.

[0175] Next, a magnetic layer forming process is carried out to form the magnetic layer 50 in the gaps between the insulating portions 651. Because the insulating portions 651 are distributed over a wide range, the density of the magnetic layer 50 formed on the substrate 30 is made uniform over a wide range. Therefore, the distribution of stress generated in the substrate 30 by the magnetic layer 50 is also made uniform.

[0176] Subsequently, a polishing step, an insulating layer removing step, a step of removing a portion of the substrate 30, a step of removing a portion of the second intermediate layer 62, and a step of removing a portion of the first intermediate layer 61 are performed. In the insulating layer removing step, the plurality of insulating portions 651 that overlap the first openings 31 are removed, but the plurality of insulating portions 651 that do not overlap the first openings 31 remain. As a result, a mask 20 is obtained that includes a plurality of insulating portions 651 that are located in the peripheral region 43 and distributed in the surface direction of the substrate second surface 302, as shown in Figures 36A and 36B.

[0177] The distribution of stress generated in the substrate 30 due to the magnetic layer 50 is made uniform, so that warping of the mask 20 can be suppressed.

[0178] (Sixth Modification) Fig. 38 is a diagram showing an example of an apparatus 200 including an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal may be smart glasses, a head-mounted display, or the like.

[0179] It is also possible to combine the multiple components disclosed in the above-described embodiments and modifications as needed, or to delete some of the components disclosed in the above-described embodiments and modifications.

Claims

1. A mask comprising: a substrate including a substrate first surface, a substrate second surface opposite to the substrate first surface, and at least one first opening penetrating from the substrate first surface to the substrate second surface; a laminate including a first surface facing the substrate second surface, a second surface opposite to the first surface, a magnetic layer including a magnetic metal, and a non-magnetic layer located between the magnetic layer and the first surface or between the magnetic layer and the second surface, the laminate including: a pattern region overlapping the first opening in a planar view and including a plurality of second openings penetrating the magnetic layer and the non-magnetic layer, a peripheral region surrounding the pattern region in a planar view, and an outer edge region surrounding the peripheral region in a planar view and located at the outer edge of the laminate.

2. The mask according to claim 1, wherein the non-magnetic layer is insulating.

3. The mask of claim 1, wherein the non-magnetic layer comprises silicon oxide or silicon nitride.

4. The mask of claim 1, wherein the substrate comprises silicon or a silicon compound.

5. The mask of any one of claims 1 to 4, wherein the non-magnetic layer includes a first non-magnetic layer located between the magnetic layer and the first surface.

6. The mask of claim 5, wherein said stack further comprises a first intermediate layer located between said first non-magnetic layer and said magnetic layer, said first intermediate layer comprising a metal.

7. The mask of claim 5, wherein the peripheral region of the stack comprises a second intermediate layer located between the first nonmagnetic layer and the second surface of the substrate.

8. A mask according to any one of claims 1 to 4, wherein the peripheral region of the stack comprises an insulating layer which is coplanar with the magnetic layer in the pattern region.

9. The mask described in claim 8, wherein the insulating layer in the surrounding region includes a plurality of insulating portions distributed in the planar direction of the second surface of the substrate, and the surrounding region includes the magnetic layer located in the gaps between the plurality of insulating portions.

10. The mask of claim 1, wherein the non-magnetic layer includes a second non-magnetic layer located between the magnetic layer and the second surface.

11. A method for manufacturing a mask, comprising: a substrate preparation step of preparing a substrate including a substrate first surface and a substrate second surface located opposite the substrate first surface; a first non-magnetic layer formation step of forming a first non-magnetic layer facing the substrate second surface and including a plurality of through holes; an insulating layer formation step of forming an insulating layer including a plurality of insulating portions that overlap the plurality of through holes of the first non-magnetic layer in a planar view; a magnetic layer formation step of forming a magnetic layer in gaps between the plurality of insulating portions; an insulating layer removal step of removing the plurality of insulating portions; and a substrate processing step of forming a first opening in the substrate that overlaps the plurality of through holes of the first non-magnetic layer in a planar view.

12. The method for manufacturing a mask according to claim 11, further comprising a step of forming a first intermediate layer containing a metal and covering the first nonmagnetic layer, wherein in the insulating layer forming step, the insulating layer is formed on the first intermediate layer.

13. A method for manufacturing a mask as described in claim 11, further comprising a step of forming a second intermediate layer located on the second surface of the substrate, wherein in the first non-magnetic layer forming step, the first non-magnetic layer is formed on the second intermediate layer.

14. The method of claim 11, wherein the first nonmagnetic layer comprises silicon oxide or silicon nitride.

15. A method for manufacturing a mask, comprising: a substrate preparation step of preparing a substrate including a substrate first surface and a substrate second surface located opposite the substrate first surface; an insulating layer formation step of forming an insulating layer including a plurality of insulating portions distributed in a planar view in the surface direction of the substrate second surface; a magnetic layer formation step of forming a magnetic layer in gaps between the plurality of insulating portions; a second non-magnetic layer formation step of forming a second non-magnetic layer including through holes each overlapping with a plurality of insulating portions in a planar view; an insulating layer removal step of removing the plurality of insulating portions; and a substrate processing step of forming a first opening in the substrate each overlapping with the plurality of through holes of the second non-magnetic layer in a planar view.

16. The method for manufacturing a mask according to claim 15, further comprising a step of forming an intermediate layer containing a metal and located on the second surface of the substrate, wherein in the insulating layer forming step, the insulating layer is formed on the intermediate layer.

17. The method of claim 15, wherein the second nonmagnetic layer comprises silicon oxide or silicon nitride.

18. The method for manufacturing a mask according to any one of claims 11 to 17, wherein the substrate comprises silicon or a silicon compound.

19. A method for manufacturing a mask according to any one of claims 11 to 17, wherein the insulating layer removal step is carried out so that the insulating layer remains in a position that does not overlap the first opening in a planar view.

20. The method for manufacturing a mask according to claim 19, wherein the insulating layer remaining after the insulating layer removal step includes a plurality of insulating portions distributed in a planar direction of the second surface of the substrate.

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