Substrate processing system and substrate processing device

Abstract

This substrate processing system is provided with: a vacuum conveyance module; a main interface unit having a first surface connected to the vacuum conveyance module, a second surface opposite to the first surface, an upper surface, and a lower surface; and a substrate processing module. The substrate processing module includes: a replaceable intermediate chamber unit having an upper surface and a lower surface; a replaceable upper chamber unit detachably connected to the upper surface of the replaceable intermediate chamber unit; and a replaceable lower chamber unit detachably connected to the lower surface of the replaceable intermediate chamber unit. The replaceable intermediate chamber unit includes: a chamber lateral wall structure body defining an internal space; a substrate support section disposed in the internal space; and an intermediate interface structure body detachably connected to the second surface of the main interface unit. The replaceable upper chamber unit includes: a chamber upper wall structure body defining the internal space and having a gas introduction port for introducing a processing gas into the internal space; and an upper interface structure body detachably connected to the upper surface of the main interface unit. The replaceable lower chamber unit includes: a chamber bottom wall structure body defining the internal space and having a gas discharge port for discharging a gas in the internal space; and a lower interface structure body detachably connected to the lower surface of the main interface unit.

Description

Substrate processing system and substrate processing apparatus

[0001] The present disclosure relates to a substrate processing system and a substrate processing apparatus.

[0002] Patent Document 1 discloses a substrate processing system including a vacuum transfer module with multiple process modules arranged on its side, in which an electrical unit is provided above the process modules and a power supply unit is provided below the process modules.

[0003] Japanese Patent Application Laid-Open No. 2021-034495

[0004] The technology according to the present disclosure appropriately performs maintenance on a substrate processing module in a substrate processing system.

[0005] One aspect of the present disclosure provides a substrate processing module, comprising: a vacuum transfer module; a main interface unit having a first surface connected to the vacuum transfer module, a second surface opposite the first surface, an upper surface, and a lower surface; and a substrate processing module, wherein the substrate processing module includes an exchangeable intermediate chamber unit having an upper surface and a lower surface, an exchangeable upper chamber unit detachably connected to the upper surface of the exchangeable intermediate chamber unit, and an exchangeable lower chamber unit detachably connected to the lower surface of the exchangeable intermediate chamber unit, the exchangeable intermediate chamber unit including a chamber sidewall structure defining an interior space, a substrate support disposed within the interior space, and a front and an intermediate interface structure detachably connected to the second surface of the main interface unit, wherein the replaceable upper chamber unit includes a chamber upper wall structure defining the internal space and having a gas inlet for introducing a processing gas into the internal space, and the upper interface structure detachably connected to the top surface of the main interface unit, and the replaceable lower chamber unit includes a chamber bottom wall structure defining the internal space and having a gas outlet for discharging gas from the internal space, and the lower interface structure detachably connected to the bottom surface of the main interface unit.

[0006] According to the present disclosure, maintenance of a substrate processing module in a substrate processing system can be performed appropriately.

[0007] FIG. 1 is a plan view showing the configuration of a substrate processing system according to an embodiment; FIG. 2 is a perspective view showing a partial configuration of a substrate processing system according to an embodiment; FIG. 3 is a perspective view showing the configuration of each unit according to an embodiment; FIG. 4 is a perspective view showing an example of a state when an intermediate unit is attached to a main interface unit; FIG. 5 is a perspective view showing an example of a state when an upper unit and a lower unit are attached to a main interface unit; FIG. 6 is an explanatory view showing the configuration of a substrate processing module according to a first embodiment; FIG. 7 is an explanatory view showing the configuration of each unit according to the first embodiment; FIG. 8 is an explanatory view showing the configuration of a substrate processing module according to a second embodiment; FIG. 9 is an explanatory view showing the configuration of each unit according to the second embodiment; FIG. 10 is an explanatory view showing the configuration of a substrate processing module according to a third embodiment; FIG. 11 is an explanatory view showing the configuration of each unit according to the third embodiment.

[0008] In the manufacturing process of semiconductor devices, various processing steps are performed in which semiconductor wafers (hereinafter referred to as "substrates") are stored in substrate processing modules and subjected to predetermined processes. These processing steps are performed using a substrate processing apparatus having multiple substrate processing modules arranged around a common transfer module, for example.

[0009] As disclosed in Patent Document 1, the substrate processing module includes an internal space where substrates are processed, a gas supply system, a power supply system, and a number of components related to a control system. Maintenance such as initial maintenance, inspection, cleaning, repair, or replacement is performed on these components as needed.

[0010] However, in a substrate processing system such as that disclosed in Patent Document 1, maintenance of a substrate processing module may require the removal or disassembly of the entire substrate processing module. In this case, productivity of the entire substrate processing system may decrease while the substrate processing module is unavailable. Furthermore, when initially installing a substrate processing module in the substrate processing system or reinstalling it after maintenance, the piping, cables, and other components related to the gas supply system, power supply system, and control system must be individually connected. Furthermore, transporting the entire substrate processing module between the substrate processing system and an external device incurs costs. Storing a replacement entire substrate processing module externally also incurs costs. Therefore, there is room for improvement in terms of performing proper maintenance.

[0011] Therefore, the present disclosure provides a substrate processing system including a plurality of units capable of performing appropriate maintenance on a substrate processing module.

[0012] Hereinafter, the configuration of the substrate processing apparatus according to this embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] <Substrate Processing System> A substrate processing system according to this embodiment will be described. Fig. 1 is a plan view showing an outline of the configuration of the substrate processing system according to this embodiment. In the substrate processing system, a process including a film formation process, a cleaning process, or other desired gas processing such as a plasma process is performed on a substrate W.

[0014] 1, the substrate processing system includes a substrate processing apparatus 1 and a control unit 2. The substrate processing apparatus 1 has a configuration in which an atmospheric unit 10 and a decompression unit 11 are integrally connected via load lock modules 20 and 21. The atmospheric unit 10 includes an atmospheric module that performs desired processing on substrates W in an atmospheric pressure atmosphere. The decompression unit 11 includes a decompression module that performs desired processing on substrates W in a decompression atmosphere.

[0015] The load lock modules 20 and 21 are provided to connect an atmospheric transfer module 30 (described later) in the atmospheric section 10 to a vacuum transfer module 40 (described later) in the reduced pressure section 11 via gate valves 22 and 23, respectively. The load lock modules 20 and 21 are configured to temporarily hold a substrate W. The load lock modules 20 and 21 are also configured so that their interiors can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere (vacuum state).

[0016] The atmospheric section 10 has an atmospheric transfer module 30 equipped with a substrate transfer mechanism 50 described below, and a load port 32 on which is placed a FOUP 31 capable of storing a plurality of substrates W. Note that an orienter module (not shown) for adjusting the horizontal orientation of the substrate W, a storage module (not shown) for storing a plurality of substrates W, and the like may be provided adjacent to the atmospheric transfer module 30.

[0017] The atmospheric transfer module 30 has a housing with a substantially rectangular parallelepiped shape, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five load ports 32 are arranged side by side on one side that constitutes the long side of the housing of the atmospheric transfer module 30. The load lock modules 20 and 21 are arranged side by side on the other side that constitutes the long side of the housing of the atmospheric transfer module 30.

[0018] A substrate transport mechanism 50 for transporting a substrate W is provided inside the atmospheric transfer module 30. The substrate transport mechanism 50 has a transport arm 51 that holds and moves the substrate W, a rotary table 52 that rotatably supports the transport arm 51, and a rotary table 53 on which the rotary table 52 is mounted. Also, a guide rail 54 extending in the longitudinal direction of the atmospheric transfer module 30 is provided inside the atmospheric transfer module 30. The rotary table 53 is provided on the guide rail 54, and the substrate transport mechanism 50 is configured to be movable along the guide rail 54.

[0019] The decompression unit 11 has a vacuum transfer module 40 that transfers the substrate W therein, and a substrate processing module 60 that performs desired processing on the substrate W transferred from the vacuum transfer module 40. The interiors of chambers described below in the vacuum transfer module 40 and the substrate processing module 60 are each configured to be able to maintain a decompressed atmosphere.

[0020] A plurality of substrate processing modules 60 are connected to one vacuum transfer module 40. The chambers of the substrate processing modules 60 are connected to the vacuum transfer module 40 via openings 71 provided in the main interface unit 70. The openings 71 include at least one gate valve. Details of the substrate processing modules 60 and the main interface unit 70 will be described later. Note that, although six substrate processing modules 60 are connected in the example shown in FIG. 1 , this is not limiting, and fewer or more than six substrate processing modules 60 may be connected.

[0021] As described above, the vacuum transfer module 40 is connected to the load lock modules 20 and 21. In one embodiment, the vacuum transfer module 40 is configured to transfer a substrate W transferred from the atmospheric section 10 to the load lock module 20 to one of the substrate processing modules 60. The vacuum transfer module is also configured to transfer a substrate W that has been subjected to a desired process in the substrate processing module 60 to the load lock module 21.

[0022] A substrate transport mechanism 73 for transporting the substrate W is provided inside the vacuum transfer module 40. The substrate transport mechanism 73 has a transport arm 74 that holds and moves the substrate W, a rotary table 75 that rotatably supports the transport arm 74, and a rotary table 76 on which the rotary table 75 is mounted. Also, a guide rail 77 extending in the longitudinal direction of the vacuum transfer module 40 is provided inside the vacuum transfer module 40. The rotary table 76 is provided on the guide rail 77, and the substrate transport mechanism 73 is configured to be movable along the guide rail 77.

[0023] The substrate transport mechanism 73 receives the substrate W held in the load lock module 20 with the transport arm 74 and transports it to the desired substrate processing module 60. The substrate transport mechanism 73 also holds the substrate W that has been subjected to the desired processing in the substrate processing module 60 with the transport arm 74 and transports it to the load lock module 21.

[0024] The vacuum transfer module 40 is also provided with a plurality of gas boxes 80 that supply gas to the substrate processing modules 60, for example, a plurality of gas boxes 80 corresponding to each substrate processing module 60 in this embodiment. The gas boxes 80 are an example of a gas box unit. The number and arrangement of the gas boxes 80 are not limited to this embodiment. In the example shown in FIG. 1 , six gas boxes 80 are provided corresponding to the six substrate processing modules 60, but this is not limiting, and fewer or more than six gas boxes 80 may be provided. The gas boxes 80 in one embodiment are attached to the frame of the substrate processing modules 60 so as to be positioned above the vacuum transfer module 40.

[0025] The control unit 2 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the substrate processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the substrate processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the substrate processing apparatus 1 via a communication line such as a local area network (LAN).

[0026] 2 is a perspective view schematically illustrating a partial configuration of the substrate processing system according to this embodiment. The main interface unit 70 includes a first surface 91 on the side connected to the vacuum transfer module 40 (the positive Y-axis side), a second surface 92 on the opposite side of the first surface (the negative Y-axis side), a third surface 93 on the upper side (the positive Z-axis side) between the first surface 91 and the second surface 92, and a fourth surface 94 on the lower side (the negative Z-axis side) between the first surface 91 and the second surface 92. The opening 71 is provided so as to penetrate from the first surface 91 to the second surface 92. A seal ring 95 is provided in the opening 71 on the second surface 92 side.

[0027] The second surface 92, the third surface 93, and the fourth surface 94 each include a guide pin 96. Furthermore, one or more pipe ports 97 or connectors 98 are provided on any of the second surface 92, the third surface 93, and the fourth surface 94.

[0028] 2, the substrate processing module 60 according to this embodiment is detachably mounted to a main interface unit 70. The substrate processing module 60 is attached to the main interface unit 70 on the left side of Fig. 2 (the positive side of the X axis), and the substrate processing module 60 is detached from the main interface unit 70 on the right side of the figure (the negative side of the X axis).

[0029] The substrate processing module 60 includes at least a middle unit 101, an upper unit 102, and a lower unit 103. The middle unit 101, the upper unit 102, and the lower unit 103 are examples of a replaceable middle chamber unit, a replaceable upper chamber unit, and a replaceable lower chamber unit, respectively. The middle unit 101 includes an intermediate interface structure 111. The middle unit 101 is removably attached to the second surface 92 of the main interface unit 70 via the intermediate interface structure 111. The upper unit 102 includes an upper interface structure 112 and is removably attached to the third surface 93 of the main interface unit 70 via the upper interface structure 112. The lower unit 103 includes a lower interface structure 113 and is removably attached to the fourth surface 94 of the main interface unit 70 via the lower interface structure 113.

[0030] FIG. 3 is a schematic diagram showing the overall configuration of the intermediate unit 101, upper unit 102, and lower unit 103 when removed from the main interface unit 70. Note that FIG. 3 only shows the structures of the intermediate interface structure 111, upper interface structure 112, and lower interface structure 113 on the outer surfaces of the housing, and does not show the interiors of these structures or the internal structures of other units. The intermediate unit 101, upper unit 102, and lower unit 103 are detachable from one another and can be separated from one another as shown in FIG. 3. The intermediate unit 101 has an upper surface 101a and a lower surface 101b, and is detachable from the upper unit 102 at the upper surface 101a and from the lower unit 103 at the lower surface 101b.

[0031] In the intermediate unit 101, the intermediate interface structure 111 has a guide hole 121 at a position corresponding to the guide pin 96 provided on the second surface 92 of the main interface unit 70. It also has a pipe port 122 and a connector 123 at positions corresponding to the pipe port 97 and connector 98 provided on the second surface 92. It also has an opening 124 at a position corresponding to the opening 71 on the second surface 92. The opening 124 is provided so as to penetrate from the surface of the intermediate interface structure 111 facing the second surface 92 (the surface on the positive Y-axis direction side) to the opposite surface (the surface on the negative Y-axis direction side). A seal ring 125 is provided at the pipe port 122.

[0032] Similarly, the upper unit 102 and the lower unit 103 are provided with a guide hole 121, a pipe port 122, and a connector 123 at positions corresponding to the guide pin 96, the pipe port 97, and the connector 98 provided on the third surface 93 and the fourth surface 94, respectively. A seal ring 125 is provided at the pipe port 122.

[0033] In one embodiment, the intermediate unit 101, the upper unit 102, and the lower unit 103 of the substrate processing module 60 are detached from each other, and then the intermediate unit 101 is attached to the main interface unit 70. FIG. 4 is a perspective view showing an example of a state in which the intermediate unit 101 is attached to the main interface unit 70. In the example of FIG. 4 , the intermediate unit 101 is moved from the negative side of the Y axis toward the positive side so that the guide pins 96 on the second surface 92 of the main interface unit 70 are fitted into the guide holes 121 on the intermediate interface structure 111. The main interface unit 70 and the intermediate interface structure 111 are fastened together with the second surface 92 in contact with the surface of the intermediate interface structure 111 facing the second surface 92 (the surface on the positive side of the Y axis). The fastening means is not particularly limited, and may be a known clamp or bolt.

[0034] When the second surface 92 of the main interface unit 70 and the intermediate interface structure 111 are fastened together, the opening 71 of the second surface 92 and the opening 124 of the intermediate interface structure 111 come into contact and are connected together while being sealed from the outside air by the seal ring 95. The connected openings 71 and 124 connect the vacuum transfer module 40 to a chamber 200, which will be described later. The substrate W is transferred between the vacuum transfer module 40 and the chamber 200 by a transfer arm 74 via the openings 71 and 124.

[0035] Furthermore, the pipe port 97 of the second surface 92 and the pipe port 122 of the intermediate interface structure 111 come into contact with each other and are connected in a state sealed from the outside air by the seal ring 125. Furthermore, the connector 98 of the second surface 92 and the connector 123 of the intermediate interface structure 111 come into contact with each other and are connected to each other.

[0036] Next, with the second surface 92 of the main interface unit 70 and the intermediate interface structure 111 fastened together, the upper unit 102 and the lower unit 103 are attached to the main interface unit. FIG. 5 is a perspective view showing an example of a state in which the upper unit 102 and the lower unit 103 are attached to the main interface unit 70. In the example of FIG. 5 , the upper unit 102 is moved from the positive side of the Z axis toward the negative side so that the guide pin 96 on the third surface 93 of the main interface unit 70 fits into the guide hole 121 on the upper interface structure 112. With the third surface 93 in contact with the surface of the upper interface structure 112 facing the third surface 93 (the surface on the negative side of the Z axis), the main interface unit 70 and the upper interface structure 112 are fastened together. Similarly, for the lower unit 103, the lower unit 103 is moved from the negative side of the Z axis toward the positive side so that the guide pin 96 provided on the fourth surface 94 of the main interface unit 70 fits into the guide hole 121 provided in the lower interface structure 113. The main interface unit 70 and the lower interface structure 113 are fastened together in a state where the fourth surface 94 is in contact with the surface of the lower interface structure 113 that faces the fourth surface 94 (the surface on the positive side of the Z axis). The fastening means is not particularly limited, and may be a known clamp mechanism or bolt.

[0037] When the third surface 93 of the main interface unit 70 and the upper unit 102 are fastened together, the pipe port 97 on the third surface 93 and the pipe port 122 on the upper interface structure 112 come into contact and are coupled together in a state sealed from the outside air by the seal ring 125. Furthermore, the connector 98 on the third surface 93 and the connector 123 on the upper interface structure 112 come into contact and are coupled together. Similarly, when the fourth surface 94 of the main interface unit 70 and the lower unit 103 are fastened together, the pipe port 97 on the fourth surface 94 and the pipe port 122 on the lower interface structure 113 come into contact and are coupled together in a state sealed from the outside air by the seal ring 125. Furthermore, the connector 98 on the fourth surface 94 and the connector 123 on the lower interface structure 113 come into contact and are coupled together.

[0038] An example of a state in which the intermediate unit 101, the upper unit 102, and the lower unit 103 are attached to the main interface unit 70 is shown in FIG.

[0039] <Substrate Processing Module> (First Embodiment) FIG. 6 is a diagram illustrating an example of the configuration of a substrate processing module 60 according to the first embodiment. FIG. 6 shows a cross-sectional view of the substrate processing module 60 with the intermediate unit 101, upper unit 102, and lower unit 103 attached to the main interface unit 70. The substrate processing module 60 according to this embodiment constitutes a capacitively coupled plasma processing apparatus. The substrate processing module 60 includes a plasma processing chamber 200 (hereinafter referred to as the chamber 200), a substrate support 201, and a plasma generation unit. The substrate processing module 60 has a plasma processing space 200s, which is the internal space of the chamber 200. The chamber 200 also has at least one gas supply port for supplying at least one processing gas from a gas box 80 to the plasma processing space 200s and at least one gas exhaust port for exhausting gas from the plasma processing space 200s. The gas supply port is connected to the gas box 80, and the gas exhaust port is connected to an exhaust system 202, which will be described later. The substrate support 201 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0040] The substrate processing module 60 includes an upper box 203 located above the chamber 200 and a lower box 204 located below the chamber 200. In one embodiment, various devices such as an electrical unit configured to control the substrate processing module 60 may be disposed in the upper box 203. In another embodiment, a power supply 205 that supplies power to the substrate processing module 60 is disposed in the lower box 204.

[0041] The electrical unit that controls the substrate processing module 60 provided in the upper box 203 sends and receives signals to and from the chamber 200 and the lower box 204 via a signal cable 206. The signal cable 206 is connected from the upper box 203 to the chamber 200 via the upper interface structure 112, the main interface unit 70, and the intermediate interface structure 111. That is, the connector 98 in the upper interface structure 112 and the main interface unit 70 and the connector 123 in the intermediate interface structure 111 include connectors on the path of the signal cable 206. Also, the signal cable 206 is connected from the upper box 203 to the chamber 200 via the upper interface structure 112, the main interface unit 70, and the lower interface structure 113. That is, the connector 123 in the lower interface structure 113 includes a connector on the path of the signal cable 206.

[0042] The plasma generating unit is configured to generate plasma from at least one processing gas supplied into the plasma processing space 200s. The plasma generated in the plasma processing space 200s may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0043] The gas box 80 may include at least one gas source and at least one flow controller. In one embodiment, the gas box 80 is configured to supply at least one process gas from a corresponding gas source through a corresponding flow controller to the showerhead 210. Each flow controller may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas box 80 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0044] Gas is supplied from the gas box 80 to the showerhead 210 via a flow path 211, shown by a bold dashed line in Figure 6. The flow path 211 runs from the gas box 80 through the main interface unit 70 and the upper interface structure 112. That is, the port 97 in the main interface unit 70 and the port 122 in the upper interface structure 112 comprise the port of the flow path 211.

[0045] The substrate processing module 60 includes a gas inlet. The gas inlet is configured to introduce at least one process gas supplied from the gas box 80 into the chamber 200. The gas inlet includes a showerhead 210. The showerhead 210 is disposed above a substrate support 201. The substrate support 201 is disposed within the chamber 200 and fixed on a bottom wall 200b. The showerhead 210 constitutes at least a part of a chamber upper wall structure serving as the ceiling of the chamber 200. A plasma processing space 200s is defined by the showerhead 210 serving as the chamber upper wall structure, the sidewall 200a serving as the chamber sidewall structure, and the bottom wall 200b serving as the chamber bottom wall structure. The chamber 200 is grounded. The showerhead 210 and the substrate support 201 are electrically insulated from the housing of the chamber 200.

[0046] The showerhead 210 has at least one gas supply port 210a, at least one gas diffusion chamber 210b, and multiple gas inlets 210c. The processing gas supplied to the gas supply port 210a passes through the gas diffusion chamber 210b and is introduced into the plasma processing space 200s through the multiple gas inlets 210c. The showerhead 210 also includes at least one upper electrode. Note that the gas inlet may include, in addition to the showerhead 210, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 200a.

[0047] The showerhead 210 includes a flow path 212 through which a heat transfer fluid, such as brine or gas, flows. The heat transfer fluid is supplied from a heat transfer fluid supply unit (not shown) or discharged from the flow path 212 to the heat transfer fluid supply unit. The heat transfer fluid is supplied from the heat transfer fluid supply unit or discharged to the heat transfer fluid supply unit via a flow path 213, shown by a bold solid line in FIG. 6 . The flow path 213 is provided to extend from the heat transfer fluid supply unit through the main interface unit 70 and the upper interface structure 112. That is, the port 97 in the main interface unit 70 and the port 122 in the upper interface structure 112 include the port of the flow path 213.

[0048] The substrate support 201 includes a main body 221 and a ring assembly 222. The main body 221 has a central region 221a for supporting a substrate W and an annular region 221b for supporting the ring assembly 222. A wafer is an example of a substrate W. The annular region 221b of the main body 221 surrounds the central region 221a of the main body 221 in a plan view. The substrate W is disposed on the central region 221a of the main body 221, and the ring assembly 222 is disposed on the annular region 221b of the main body 221 so as to surround the substrate W on the central region 221a of the main body 221. Therefore, the central region 221a is also called a substrate support surface for supporting the substrate W, and the annular region 221b is also called a ring support surface for supporting the ring assembly 222.

[0049] In one embodiment, the body 221 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base can function as a lower electrode. The electrostatic chuck is disposed on the base. The electrostatic chuck includes a ceramic member and an electrostatic electrode disposed within the ceramic member. The ceramic member has a central region 221a. In one embodiment, the ceramic member also has an annular region 221b. Note that the annular region 221b may also be included in another member surrounding the electrostatic chuck, such as the annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 222 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power source 231 and / or a DC power source 232, which will be described later, may be disposed within the ceramic member. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode may also be referred to as a bias electrode. Alternatively, the conductive member of the base and at least one RF / DC electrode may function as the plurality of lower electrodes. Alternatively, an electrostatic electrode may function as the lower electrode. Thus, the substrate support 201 includes at least one lower electrode. In one embodiment, the electrical unit includes a chuck power supply (not shown) configured to apply a chucking voltage to the electrostatic electrode. In another embodiment, the RF unit (described later) includes a chuck power supply (not shown) configured to apply a chucking voltage to the electrostatic electrode.

[0050] The ring assembly 222 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0051] The substrate support 201 may also include a temperature regulation module configured to regulate at least one of the electrostatic chuck, the ring assembly 222, and the substrate W to a target temperature. The temperature regulation module may include a heater, a heat transfer medium, a flow path 223, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 223. The heat transfer fluid is supplied from a heat transfer fluid supply unit (not shown) or discharged from the flow path 223 to the heat transfer fluid supply unit. The heat transfer fluid is supplied from the heat transfer fluid supply unit or discharged to the heat transfer fluid supply unit via a flow path 224, shown by a thick solid line in FIG. 6 . In one embodiment, the flow path 223 is formed in the base, and one or more heaters are disposed in a ceramic member of the electrostatic chuck.

[0052] The substrate support 201 is also configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 221a. The heat transfer gas is supplied from a heat transfer gas supply unit (not shown) or discharged from the gap to the heat transfer gas supply unit. The heat transfer gas is supplied or discharged from the heat transfer gas supply unit via a flow path 225 indicated by a thick dashed line in Figure 6. The heat transfer gas includes an inert gas such as helium.

[0053] Flow paths 224 and 225 are provided from the heat transfer fluid supply and the heat transfer gas supply through the main interface unit 70 and the lower interface structure 113. That is, port 97 in the main interface unit 70 and port 122 in the lower interface structure 113 comprise the port of flow paths 224 and 225.

[0054] The power supply 205, as an example of an RF unit according to this embodiment, includes an RF power supply 231 coupled to the chamber 200 via at least one impedance matching circuit. The RF power supply 231 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 200s. Therefore, the RF power supply 231 can function as at least a part of a plasma generating unit. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0055] In one embodiment, the RF power supply 231 includes a first RF generating unit 231a and a second RF generating unit 231b. The first RF generating unit 231a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. The source RF signal is supplied via a coaxial cable 233, shown by a bold dashed-dotted line in FIG. 6 . In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 231a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0056] The second RF generator 231b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 231b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0057] The power supply 205 may also include a DC power supply 232 coupled to the chamber 200. The DC power supply 232 includes a first DC generator 232a and a second DC generator 232b. In one embodiment, the first DC generator 232a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 232b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0058] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 232a and at least one lower electrode. Thus, the first DC generator 232a and the waveform generator constitute a voltage pulse generator. When the second DC generator 232b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 232a and 232b may be provided in addition to the RF power supply 231, or the first DC generating unit 232a may be provided instead of the second RF generating unit 231b.

[0059] The exhaust system 202 may be connected to, for example, a gas exhaust port 200e provided at the bottom of the chamber 200. The exhaust system 202 is an example of an exhaust unit according to this embodiment and constitutes at least a part of the exhaust line according to this embodiment. The exhaust system 202 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 200s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0060] <Intermediate Unit 101, Upper Unit 102, and Lower Unit 103> The following describes the configurations of the intermediate unit 101, upper unit 102, and lower unit 103 in the substrate processing module 60 according to the first embodiment. As described above, the substrate processing module 60 includes at least the intermediate unit 101, upper unit 102, and lower unit 103, which are detachably attached to the main interface unit 70. Furthermore, the intermediate unit 101, upper unit 102, and lower unit 103 are detachable from one another.

[0061] 7 is a diagram illustrating an example of the configuration of the intermediate unit 101, upper unit 102, and lower unit 103 in the substrate processing module 60 according to the first embodiment. In FIG. 7, the substrate processing module 60 is detached from the main interface unit 70, and the intermediate unit 101, upper unit 102, and lower unit 103 are separated.

[0062] The middle unit 101 includes a chamber sidewall 200a and a substrate support 201. The upper unit 102 includes an upper box 203 and a shower head 210. That is, in this embodiment, the electrical unit included in the upper box 203 is included in the upper unit 102. The lower unit 103 includes a gas outlet 200e, an exhaust system 202, and a lower box 204. That is, in this embodiment, the RF unit included in the lower box 204 is included in the lower unit 103.

[0063] A seal ring 241 is provided on the outer circumferential upper surface of the chamber sidewall 200a of the intermediate unit 101. When the intermediate unit 101 and the upper unit 102 are fastened together, the chamber sidewall 200a and the shower head 210 come into contact with each other and are connected in a state sealed from the outside air by the seal ring 241. Furthermore, a seal ring 242 is provided on the outer circumferential upper surface of the housing of the lower unit 103 at a position corresponding to the lower surface of the chamber sidewall 200a. When the intermediate unit 101 and the lower unit 103 are fastened together, the chamber sidewall 200a and the housing of the lower unit 103 come into contact with each other and are connected in a state sealed from the outside air by the seal ring 242.

[0064] A seal ring 242 is provided at a corresponding position on the underside of the chamber side wall 200a of the lower unit 103. When the intermediate unit 101 and the lower unit 103 are fastened together, the chamber side wall 200a and the housing of the lower unit 103 come into contact with each other, and they are connected in a state sealed from the outside air by the seal ring 242.

[0065] The flow paths 224 and 225 have pipe ports 243 on the lower surface of the intermediate unit 101 and on the upper surface of the lower unit 103, respectively, and are separated at the respective pipe ports 243 when the intermediate unit 101 and the lower unit 103 are separated. The pipe port 243 on the upper surface of the lower unit 103 is provided with a seal ring, and when the intermediate unit 101 and the lower unit 103 are fastened together, the lower surface of the intermediate unit 101 and the upper surface of the lower unit 103 come into contact, and the respective pipe ports 243 of the flow paths 224 and 225 are connected in a state sealed from the outside air by the seal ring.

[0066] The coaxial cable 233 has connectors 244 on the lower surface of the intermediate unit 101 and on the upper surface of the lower unit 103, and is separated at the connectors 244 when the intermediate unit 101 and the lower unit 103 are separated. When the intermediate unit 101 and the lower unit 103 are fastened together, the lower surface of the intermediate unit 101 and the upper surface of the lower unit 103 come into contact, and the coaxial cable 233 is connected at the connectors 244.

[0067] Second Embodiment The configuration of the intermediate unit 101, upper unit 102, and lower unit 103 in a substrate processing module 60 according to a second embodiment will now be described. Figures 8 and 9 are views for explaining an example configuration of the intermediate unit 101, upper unit 102, and lower unit 103 in a substrate processing module 60 according to the second embodiment. Figure 8 shows a state in which the units of the substrate processing module 60 are fastened together and attached to the main interface unit 70. Figure 9 shows a state in which the substrate processing module 60 has been detached from the main interface unit 70 and separated into the intermediate unit 101, upper unit 102, and lower unit 103.

[0068] The substrate processing module 60 according to the second embodiment differs from the first embodiment in the configurations of the intermediate unit 101 and the lower unit 103. The intermediate unit 101 includes a chamber sidewall 200a, a gas exhaust port 200e, and a substrate support 201. The lower unit 103 includes an exhaust system 202 and a lower box 204. The configuration of the upper unit 102 is the same as that of the first embodiment.

[0069] In the intermediate unit 101 according to the second embodiment, flow paths 224 and 225 are provided from the heat transfer fluid supply and the heat transfer gas supply through the main interface unit 70 and the intermediate interface structure 111. That is, the port 97 in the main interface unit 70 and the port 122 in the intermediate interface structure 111 include the port of flow paths 224 and 225.

[0070] Third Embodiment The configuration of the intermediate unit 101, upper unit 102, and lower unit 103 in a substrate processing module 60 according to a third embodiment will now be described. Figures 10 and 11 are views for explaining an example configuration of the intermediate unit 101, upper unit 102, and lower unit 103 in a substrate processing module 60 according to the third embodiment. Figure 10 shows a state in which the units of the substrate processing module 60 are fastened together and attached to the main interface unit 70. Figure 11 shows a state in which the substrate processing module 60 has been detached from the main interface unit 70 and separated into the intermediate unit 101, upper unit 102, and lower unit 103.

[0071] The intermediate unit 101 according to the third embodiment includes a chamber sidewall 200a and a substrate support 201. The upper unit 102 includes a shower head 210. The lower unit 103 includes a gas outlet 200e and an exhaust system 202. In one embodiment, an upper box 203 including an electrical unit is attached to the frame of the substrate processing module 60 so as to be positioned above the upper unit 102. Furthermore, a lower box including an RF unit is attached to the frame of the substrate processing module 60 so as to be positioned below the lower unit 103.

[0072] In the third embodiment, the coaxial cable 233 is connected from the upper box 203 to the upper electrode via the main interface unit 70 and the upper interface structure 112. That is, the connector 98 in the main interface unit 70 and the connector 123 in the upper interface structure 112 include a connector for the coaxial cable 233. The coaxial cable 233 is also connected from the lower box 204 to the lower electrode via the main interface unit 70 and the lower interface structure 113. That is, the connector 98 in the main interface unit 70 and the connector 123 in the lower interface structure 113 include a connector for the coaxial cable 233.

[0073] The configuration for connecting the flow paths 224 and 225 between the middle unit 101 and the lower unit 103 is the same as in the first embodiment.

[0074] (Maintenance Method) In the substrate processing module 60 according to the various embodiments described above, it is possible to remove only one of the units, including the component that requires maintenance, of the substrate processing module 60 and install a new unit. Note that, in this specification, maintenance includes installing the substrate processing module 60 in a substrate processing system for the first time, as well as inspection, cleaning, repair, replacement, etc.

[0075] As an example, a case will be described in which maintenance is required for the intermediate unit 101 of the substrate processing module 60. First, the upper unit 102 and the lower unit 103 are removed from the main interface unit 70. The removed upper unit 102 and lower unit 103 may be held by a desired cart, crane, or the like. Next, the intermediate unit 101 is removed from the main interface unit 70. Next, the removed intermediate unit 101 is transported from the substrate processing system to the outside. Next, another intermediate unit 101 of the same type as the unit in question, for which maintenance has already been completed, is transported from the outside to the substrate processing system. Next, the other intermediate unit 101 is attached to the main interface unit 70. Next, the removed upper unit 102 and lower unit 103 are attached to the main interface unit 70. After that, maintenance may be performed on the removed intermediate unit 101.

[0076] The same applies when maintenance is required for the upper unit 102 or the lower unit 103.

[0077] According to the above-described maintenance method, it is possible to replace a unit that requires maintenance among the components of the substrate processing module 60 by removing only one of the units and installing another unit of the same type that has already undergone maintenance. This allows maintenance of the substrate processing module 60 to be performed easily and quickly, shortening the time that the substrate processing module 60 is unavailable and preventing a decrease in productivity of the entire substrate processing system.

[0078] Furthermore, in the substrate processing module 60 according to various embodiments, a plurality of utility supply lines are provided, passing through the main interface unit 70 and each interface structure. Specifically, as described above, the main interface unit 70 is connected to the plurality of utility supply lines. The upper interface structure 112 is configured to supply at least one first utility from at least one of the plurality of utility supply lines to the chamber upper wall structure via the main interface unit. The lower interface structure is configured to supply at least one second utility from at least one of the plurality of utility supply lines to the chamber bottom wall structure via the main interface unit.

[0079] The multiple utility supply lines according to various embodiments include a flow path 211 through which the process gas supplied from the gas box 80 flows, flow paths 212, 224, and 225 through which a heat transfer fluid or heat transfer gas for temperature control flows, a coaxial cable 233 for supplying an RF signal to the upper electrode or the lower electrode, and a signal cable 206 for supplying a control signal. In other words, the utility from the multiple utility supply lines includes at least one selected from the group consisting of electric power including an RF signal or a control signal, air, gas, water, and a coolant for driving the device, etc. In the present disclosure, the term "utility supply line" indicates that the line may include not only a component for supplying utility but also a component for discharging gas, heat transfer fluid, etc., and for outputting signals.

[0080] As a result, when mounting or dismounting the substrate processing module 60 to or from the main interface unit 70 during maintenance, the work of connecting or disconnecting various flow paths and cables is reduced to the work of mounting or dismounting them from the main interface unit 70. As a result, work efficiency is improved during replacement, etc., labor savings and automation of maintenance become possible, and maintenance can be performed quickly.

[0081] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0082] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0083] REFERENCE SIGNS LIST 1 Substrate processing apparatus 40 Vacuum transfer module 60 Substrate processing module 70 Main interface unit 91 First surface 92 Second surface 93 Third surface 94 Fourth surface 101 Intermediate unit 101a Upper surface 101b Lower surface 102 Upper unit 103 Lower unit 111 Intermediate interface structure 112 Upper interface structure 113 Lower interface structure 200 Chamber 200a Side wall 200b Bottom wall 200e Gas exhaust port 200s Plasma processing space 210 Showerhead

Claims

1. A substrate processing module comprising: a vacuum transfer module; a main interface unit having a first surface connected to the vacuum transfer module, a second surface opposite the first surface, an upper surface, and a lower surface; and a substrate processing module, the substrate processing module comprising: a replaceable intermediate chamber unit having an upper surface and a lower surface; a replaceable upper chamber unit detachably connected to the upper surface of the replaceable intermediate chamber unit; and a replaceable lower chamber unit detachably connected to the lower surface of the replaceable intermediate chamber unit, the replaceable intermediate chamber unit comprising: a chamber sidewall structure defining an internal space; a substrate support disposed within the internal space; and an intermediate interface structure detachably connected to the second surface of the main interface unit, the replaceable upper chamber unit comprising: a chamber upper wall structure defining the internal space and having a gas inlet for introducing a process gas into the internal space; and an upper interface structure detachably connected to the upper surface of the main interface unit, the replaceable lower chamber unit comprising: a chamber bottom structure defining the interior space and having a gas exhaust port for exhausting gas within the interior space; and a lower interface structure removably connected to the lower surface of the main interface unit.

2. The substrate processing system of claim 1, wherein the main interface unit is connected to a plurality of utility supply lines, the upper interface structure is configured to supply at least one first utility from at least one of the plurality of utility supply lines to the chamber upper wall structure via the main interface unit, and the lower interface structure is configured to supply at least one second utility from at least one of the plurality of utility supply lines to the chamber bottom wall structure via the main interface unit.

3. The substrate processing system of claim 2, wherein the at least one first utility and the at least one second utility include at least one selected from the group consisting of electrical power, air, gas, water, and a coolant.

4. The substrate processing system of claim 3, wherein the gas comprises an inert gas.

5. The substrate processing system of claim 3, wherein the main interface unit is connected to an exhaust line, and the upper interface structure is configured to exhaust gas in the interior space through the main interface unit from the chamber upper wall structure to the exhaust line.

6. The substrate processing system of claim 3, wherein the main interface unit is connected to an exhaust line, and the lower interface structure is configured to exhaust gas within the interior space through the main interface unit, through the chamber bottom wall structure, and into the exhaust line.

7. The substrate processing system of claim 3, wherein the substrate processing module includes an exhaust unit configured to exhaust gas within the interior space through the chamber bottom wall structure.

8. A substrate processing system as described in any one of claims 1 to 7, wherein the substrate processing module includes a gas box unit, and the processing gas is supplied from the gas box unit into the internal space via the main interface unit and the gas inlet of the chamber upper wall structure.

9. The substrate processing system of claim 8, wherein said gas box unit is attached to a frame of said substrate processing module so as to be positioned above said vacuum transport module.

10. The substrate processing system of any one of claims 1 to 7, wherein the substrate processing module includes an electronics unit configured to control the substrate processing module.

11. The substrate processing system of claim 10, wherein the electrical unit is included in the replaceable upper chamber unit.

12. The substrate processing system of claim 10, wherein the electrical unit is attached to a frame of the substrate processing module so as to be disposed above the replaceable upper chamber unit.

13. The substrate processing system of claim 10, wherein the substrate support includes an electrostatic chuck, and the electrical unit includes a chuck power supply configured to apply a chucking voltage to the electrostatic chuck.

14. The substrate processing system of any one of claims 1 to 7, wherein the substrate processing module includes an RF unit electrically connected to at least one of the chamber upper wall structure and the chamber bottom wall structure and configured to generate RF power.

15. The substrate processing system of claim 14, wherein the RF unit is included in the replaceable lower chamber unit.

16. The substrate processing system of claim 14, wherein the RF unit is attached to a frame of the substrate processing module so as to be disposed below the replaceable lower chamber unit.

17. The substrate processing system of claim 14, wherein the RF unit includes a voltage pulse generator configured to generate a voltage pulse.

18. The substrate processing system of claim 14, wherein the substrate support includes an electrostatic chuck, and the RF unit includes a chuck power supply configured to apply a chucking voltage to the electrostatic chuck.

19. A substrate processing apparatus comprising: a replaceable intermediate chamber unit having a substrate processing space; a replaceable upper chamber unit detachably connected above the substrate processing space; a replaceable lower chamber unit detachably connected below the substrate processing space; and an interface unit connected to a plurality of utility supply lines, wherein the interface unit is configured to supply at least one first utility from at least one of the plurality of utility supply lines to the replaceable upper chamber unit via the interface unit, and is configured to supply at least one second utility from at least one of the plurality of utility supply lines to the replaceable lower chamber unit via the interface unit.

20. The substrate processing apparatus of claim 19, wherein the at least one first utility and the at least one second utility include at least one selected from the group consisting of electrical power, air, gas, water, and a coolant.

Images