Optical film and stack structure comprising same

Abstract

Disclosed are an optical film and a stack structure comprising same. The optical film comprises two or more types of silicon-based thin films having a refractive index (n) of more than 1.489, wherein the two or more types of silicon-based thin films may have different refractive indexes.

Description

Optical film and laminated structure including the same

[0001] The present invention relates to an optical film and a laminated structure including the same according to embodiments of the present disclosure.

[0002] Electronic devices can refer to devices that perform specific functions according to the programs installed on them, such as home appliances, electronic notebooks, portable multimedia players, mobile communication terminals, tablet PCs, audio / video devices, desktop / laptop computers, and car navigation systems. For example, these electronic devices can output stored information as audio or video. As the integration of electronic devices increases and ultra-high-speed, high-capacity wireless communication becomes more widespread, a single electronic device, such as a mobile communication terminal, can now be equipped with various functions. For example, in addition to communication functions, entertainment functions such as games, multimedia functions such as music / video playback, communication and security functions for mobile banking, and functions such as schedule management and electronic wallets are being integrated into a single electronic device.

[0003] Electronic devices are becoming thinner and lighter for portability. Because electronic devices are susceptible to damage from external physical impact, they can be used with covers (e.g., cases or external housings) that enclose the device's exterior. Covers that enclose the device's exterior not only provide protection, but can also enhance the user's aesthetic appeal.

[0004] When an optical coating is placed on the surface of a cover of an electronic device, the texture of the substrate forming the cover and the unique color tone and gloss of the coating work in combination to implement the design of the product's appearance.

[0005] According to embodiments of the present disclosure, the optical film includes two or more silicon-based thin films having a refractive index (n) greater than 1.489; and the two or more silicon-based thin films may have a refractive index difference of 0.2 or more between adjacent silicon-based thin films.

[0006] According to embodiments of the present disclosure, a laminated structure includes a glass substrate; and an optical film layer disposed on the substrate and including two or more types of silicon-based thin films having a refractive index (n) greater than 1.489; wherein the two or more types of silicon-based thin films may have a refractive index difference of 0.2 or more between adjacent silicon-based thin films.

[0007] According to embodiments of the present disclosure, an external housing of an electronic device may include a laminated structure; according to embodiments of the present disclosure.

[0008] According to embodiments of the present disclosure, an electronic device may include an external housing according to embodiments of the present disclosure.

[0009] FIG. 1 is a block diagram of an electronic device within a network environment according to embodiments of the present disclosure.

[0010] FIG. 2 is a drawing illustrating the front of an electronic device according to embodiments of the present disclosure.

[0011] FIG. 3 is a drawing illustrating the rear side of an electronic device according to embodiments of the present disclosure.

[0012] FIG. 4 is an exploded perspective view of an electronic device according to embodiments of the present disclosure.

[0013] FIG. 5 is an enlarged view of a portion of a cross-sectional view of line AA of FIG. 2, according to embodiments of the present disclosure.

[0014] FIG. 6A is a cross-sectional view illustrating an optical film according to embodiments of the present disclosure.

[0015] FIG. 6b is a cross-sectional view illustrating a silicon-based thin film of an optical film according to embodiments of the present disclosure.

[0016] FIG. 6c is a cross-sectional view illustrating a silicon-based thin film of an optical film according to embodiments of the present disclosure.

[0017] FIG. 7 is a cross-sectional view illustrating a laminated structure according to embodiments of the present disclosure.

[0018] FIG. 8a is a perspective view showing a laminated structure mounted on the front surface of an electronic device according to embodiments of the present disclosure, viewed from the front, top, and side.

[0019] FIG. 8b is a perspective view showing a two-layer structure or cover mounted on the back of an electronic device according to embodiments of the present disclosure, viewed from the front, top, and side.

[0020] Hereinafter, embodiments will be described in detail with reference to the attached drawings. In the description with reference to the attached drawings, identical components are assigned the same reference numerals regardless of the drawing numbers, and redundant descriptions thereof will be omitted.

[0021] Hereinafter, embodiments will be described in detail with reference to the attached drawings. In the description with reference to the attached drawings, identical components are assigned the same reference numerals regardless of the drawing numbers, and redundant descriptions thereof will be omitted.

[0022] FIG. 1 is a block diagram of an electronic device (101) within a network environment (100) according to embodiments.

[0023] Referring to FIG. 1, in a network environment (100), an electronic device (101) may communicate with an electronic device (102) via a first network (198) (e.g., a short-range wireless communication network), or may communicate with an electronic device (104) or a server (108) via a second network (199) (e.g., a long-range wireless communication network). According to one embodiment, the electronic device (101) may communicate with the electronic device (104) via the server (108). According to one embodiment, the electronic device (101) may include a processor (120), a memory (130), an input module (150), an audio output module (155), a display module (160), an audio module (170), a sensor module (176), an interface (177), a connection terminal (178), a haptic module (179), a camera module (180), a power management module (188), a battery (189), a communication module (190), a subscriber identification module (196), or an antenna module (197). In some embodiments, the electronic device (101) may omit at least one of these components (e.g., the connection terminal (178)), or may have one or more other components added. In some embodiments, some of these components (e.g., the sensor module (176), the camera module (180), or the antenna module (197)) may be integrated into one component (e.g., the display module (160)).

[0024] The processor (120) may control at least one other component (e.g., a hardware or software component) of the electronic device (101) connected to the processor (120) by executing, for example, software (e.g., a program (140)), and may perform various data processing or calculations. According to one embodiment, as at least a part of the data processing or calculation, the processor (120) may store a command or data received from another component (e.g., a sensor module (176) or a communication module (190)) in a volatile memory (132), process the command or data stored in the volatile memory (132), and store the resulting data in a non-volatile memory (134). According to one embodiment, the processor (120) may include a main processor (121) (e.g., a central processing unit or an application processor) or a secondary processor (123) (e.g., a graphics processing unit, a neural processing unit (NPU), an image signal processor, a sensor hub processor, or a communication processor) that can operate independently or together therewith. For example, if the electronic device (101) includes a main processor (121) and a secondary processor (123), the secondary processor (123) may be configured to use less power than the main processor (121) or to be specialized for a specified function. The secondary processor (123) may be implemented separately from the main processor (121) or as a part thereof.

[0025] The auxiliary processor (123) may control at least a part of functions or states associated with at least one component (e.g., a display module (160), a sensor module (176), or a communication module (190)) of the electronic device (101), for example, on behalf of the main processor (121) while the main processor (121) is in an inactive (e.g., sleep) state, or together with the main processor (121) while the main processor (121) is in an active (e.g., application execution) state. In one embodiment, the auxiliary processor (123) (e.g., an image signal processor or a communication processor) may be implemented as a part of another functionally related component (e.g., a camera module (180) or a communication module (190)). In one embodiment, the auxiliary processor (123) (e.g., a neural network processing unit) may include a hardware structure specialized for processing artificial intelligence models. The artificial intelligence models may be generated through machine learning. This learning can be performed, for example, in the electronic device (101) itself where artificial intelligence is performed, or can be performed through a separate server (e.g., server (108)). The learning algorithm can include, for example, supervised learning, unsupervised learning, semi-supervised learning, or reinforcement learning, but is not limited to the examples described above. The artificial intelligence model can include multiple artificial neural network layers.The artificial neural network may be one of a deep neural network (DNN), a convolutional neural network (CNN), a recurrent neural network (RNN), a restricted Boltzmann machine (RBM), a deep belief network (DBN), a bidirectional recurrent deep neural network (BRDNN), a deep Q-network, or a combination of two or more of the above, but is not limited to the examples described above. In addition to, or alternatively to, a hardware structure, an artificial intelligence model may include a software structure.

[0026] The memory (130) can store various data used by at least one component (e.g., processor (120) or sensor module (176)) of the electronic device (101). The data can include, for example, software (e.g., program (140)) and input data or output data for commands related thereto. The memory (130) can include volatile memory (132) or non-volatile memory (134).

[0027] The program (140) may be stored as software in the memory (130) and may include, for example, an operating system (142), middleware (144), or an application (146).

[0028] The input module (150) can receive commands or data to be used in a component of the electronic device (101) (e.g., a processor (120)) from an external source (e.g., a user) of the electronic device (101). The input module (150) can include, for example, a microphone, a mouse, a keyboard, a key (e.g., a button), or a digital pen (e.g., a stylus pen).

[0029] The audio output module (155) can output audio signals to the outside of the electronic device (101). The audio output module (155) can include, for example, a speaker or a receiver. The speaker can be used for general purposes, such as multimedia playback or recording playback. The receiver can be used to receive incoming calls. According to one embodiment, the receiver can be implemented separately from the speaker or as part of the speaker.

[0030] The display module (160) can visually provide information to an external party (e.g., a user) of the electronic device (101). The display module (160) may include, for example, a display, a holographic device, or a projector and a control circuit for controlling the device. According to one embodiment, the display module (160) may include a touch sensor configured to detect a touch, or a pressure sensor configured to measure the intensity of a force generated by the touch.

[0031] The audio module (170) can convert sound into an electrical signal, or vice versa, convert an electrical signal into sound. According to one embodiment, the audio module (170) can acquire sound through the input module (150), output sound through the sound output module (155), or an external electronic device (e.g., electronic device (102)) (e.g., speaker or headphone) directly or wirelessly connected to the electronic device (101).

[0032] The sensor module (176) can detect the operating status (e.g., power or temperature) of the electronic device (101) or the external environmental status (e.g., user status) and generate an electrical signal or data value corresponding to the detected status. According to one embodiment, the sensor module (176) can include, for example, a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, or an illuminance sensor.

[0033] The interface (177) may support one or more designated protocols that may be used to directly or wirelessly connect the electronic device (101) with an external electronic device (e.g., the electronic device (102)). In one embodiment, the interface (177) may include, for example, a high definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, or an audio interface.

[0034] The connection terminal (178) may include a connector through which the electronic device (101) may be physically connected to an external electronic device (e.g., the electronic device (102)). According to one embodiment, the connection terminal (178) may include, for example, an HDMI connector, a USB connector, an SD card connector, or an audio connector (e.g., a headphone connector).

[0035] A haptic module (179) can convert electrical signals into mechanical stimuli (e.g., vibration or movement) or electrical stimuli that a user can perceive through tactile or kinesthetic sensations. According to one embodiment, the haptic module (179) can include, for example, a motor, a piezoelectric element, or an electrical stimulation device.

[0036] The camera module (180) can capture still images and videos. According to one embodiment, the camera module (180) may include one or more lenses, image sensors, image signal processors, or flashes.

[0037] The power management module (188) can manage power supplied to the electronic device (101). According to one embodiment, the power management module (188) can be implemented as, for example, at least a part of a power management integrated circuit (PMIC).

[0038] A battery (189) may power at least one component of the electronic device (101). In one embodiment, the battery (189) may include, for example, a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell.

[0039] The communication module (190) may support the establishment of a direct (e.g., wired) communication channel or a wireless communication channel between the electronic device (101) and an external electronic device (e.g., electronic device (102), electronic device (104), or server (108)), and the performance of communication through the established communication channel. The communication module (190) may operate independently from the processor (120) (e.g., application processor) and may include one or more communication processors that support direct (e.g., wired) communication or wireless communication. According to one embodiment, the communication module (190) may include a wireless communication module (192) (e.g., a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module) or a wired communication module (194) (e.g., a local area network (LAN) communication module, or a power line communication module). Among these communication modules, the corresponding communication module can communicate with an external electronic device (104) via a first network (198) (e.g., a short-range communication network such as Bluetooth, wireless fidelity (WiFi) direct, or infrared data association (IrDA)) or a second network (199) (e.g., a long-range communication network such as a legacy cellular network, a 5G network, a next-generation communication network, the Internet, or a computer network (e.g., a LAN or WAN)). These various types of communication modules can be integrated into a single component (e.g., a single chip) or implemented as multiple separate components (e.g., multiple chips). The wireless communication module (192) can verify or authenticate the electronic device (101) within a communication network such as the first network (198) or the second network (199) by using subscriber information (e.g., an international mobile subscriber identity (IMSI)) stored in the subscriber identification module (196).

[0040] The wireless communication module (192) can support 5G networks and next-generation communication technologies following the 4G network, such as NR access technology (new radio access technology). The NR access technology can support high-speed transmission of high-capacity data (eMBB (enhanced mobile broadband)), minimization of terminal power and connection of multiple terminals (mMTC (massive machine type communications)), or high reliability and low latency (URLLC (ultra-reliable and low-latency communications)). The wireless communication module (192) can support, for example, a high-frequency band (e.g., mmWave band) to achieve a high data transmission rate. The wireless communication module (192) can support various technologies for securing performance in a high-frequency band, such as beamforming, massive multiple-input and multiple-output (MIMO), full dimensional MIMO (FD-MIMO), array antenna, analog beam-forming, or large scale antenna. The wireless communication module (192) can support various requirements specified in the electronic device (101), an external electronic device (e.g., the electronic device (104)), or a network system (e.g., the second network (199)). According to one embodiment, the wireless communication module (192) may support a peak data rate (e.g., 20 Gbps or more) for eMBB realization, a loss coverage (e.g., 164 dB or less) for mMTC realization, or a U-plane latency (e.g., 0.5 ms or less for downlink (DL) and uplink (UL), or 1 ms or less for round trip) for URLLC realization.

[0041] The antenna module (197) can transmit or receive signals or power to or from an external device (e.g., an external electronic device). According to one embodiment, the antenna module (197) may include an antenna including a radiator formed of a conductor or a conductive pattern formed on a substrate (e.g., a PCB). According to one embodiment, the antenna module (197) may include a plurality of antennas (e.g., an array antenna). In this case, at least one antenna suitable for a communication method used in a communication network, such as the first network (198) or the second network (199), may be selected from the plurality of antennas, for example, by the communication module (190). A signal or power may be transmitted or received between the communication module (190) and an external electronic device via the selected at least one antenna. According to some embodiments, in addition to the radiator, another component (e.g., a radio frequency integrated circuit (RFIC)) may be additionally formed as a part of the antenna module (197).

[0042] According to embodiments, the antenna module (197) may form a mmWave antenna module. According to one embodiment, the mmWave antenna module may include a printed circuit board, an RFIC disposed on or adjacent a first side (e.g., a bottom side) of the printed circuit board and capable of supporting a designated high-frequency band (e.g., a mmWave band), and a plurality of antennas (e.g., an array antenna) disposed on or adjacent a second side (e.g., a top side or a side side) of the printed circuit board and capable of transmitting or receiving signals in the designated high-frequency band.

[0043] At least some of the above components can be interconnected and exchange signals (e.g., commands or data) with each other via a communication method between peripheral devices (e.g., a bus, GPIO (general purpose input and output), SPI (serial peripheral interface), or MIPI (mobile industry processor interface)).

[0044] According to one embodiment, commands or data may be transmitted or received between the electronic device (101) and an external electronic device (104) via a server (108) connected to a second network (199). Each of the external electronic devices (102 or 104) may be the same or a different type of device as the electronic device (101). According to one embodiment, all or part of the operations executed in the electronic device (101) may be executed in one or more of the external electronic devices (102, 104, or 108). For example, when the electronic device (101) is to perform a certain function or service automatically or in response to a request from a user or another device, the electronic device (101) may, instead of or in addition to executing the function or service by itself, request one or more external electronic devices to perform the function or at least a part of the service. One or more external electronic devices that receive the request may execute at least a portion of the requested function or service, or an additional function or service related to the request, and transmit the result of the execution to the electronic device (101). The electronic device (101) may process the result as is or additionally and provide it as at least a portion of a response to the request. For this purpose, cloud computing, distributed computing, mobile edge computing (MEC), or client-server computing technology may be used, for example. The electronic device (101) may provide an ultra-low latency service by using distributed computing or mobile edge computing, for example. In another embodiment, the external electronic device (104) may include an Internet of Things (IoT) device. The server (108) may be an intelligent server utilizing machine learning and / or a neural network. According to one embodiment, the external electronic device (104) or the server (108) may be included in the second network (199).The electronic device (101) can be applied to intelligent services (e.g., smart home, smart city, smart car, or healthcare) based on 5G communication technology and IoT-related technology.

[0045] FIG. 2 is a perspective view of the front of a mobile electronic device according to embodiments.

[0046] FIG. 3 is a perspective view of the rear surface of the electronic device of FIG. 1 according to embodiments.

[0047] Referring to FIGS. 2 and 3, an electronic device (100) according to embodiments may include a housing (110) including a first side (or front side) (110A), a second side (or back side) (110B), and a side surface (110C) surrounding a space between the first side (110A) and the second side (110B).

[0048] According to one embodiment (not shown), the housing may refer to a structure forming a portion of the first surface (110A), the second surface (110B), and the side surface (110C) of FIG. 1. According to one embodiment, the first surface (110A) may be formed by a front plate (102) that is at least partially substantially transparent (e.g., a glass plate or a polymer plate including various coating layers). The second surface (110B) may be formed by a substantially opaque back plate (111). The back plate (111) may be formed by, for example, coated or colored glass, ceramic, polymer, metal (e.g., aluminum, stainless steel (STS), or magnesium), or a combination of at least two of the foregoing materials. The side surface (110C) may be formed by a side bezel structure (or “side member”) (118) that is joined to the front plate (102) and the back plate (111) and includes a metal and / or a polymer. In some embodiments, the back plate (111) and the side bezel structure (118) may be formed integrally and comprise the same material (e.g., a metal material such as aluminum).

[0049] According to the illustrated embodiment, the front plate (102) may include two first regions (110D) that extend seamlessly from the first side (110A) toward the rear plate (111), at both ends of a long edge of the front plate (102). According to the illustrated embodiment (see FIG. 2), the rear plate (111) may include two second regions (110E) that extend seamlessly from the second side (110B) toward the front plate (102), at both ends of a long edge. In some embodiments, the front plate (102) (or the rear plate (111)) may include only one of the first regions (110D) (or the second regions (110E)). In some embodiments, some of the first regions (110D) or some of the second regions (110E) may not be included.

[0050] According to one embodiment, when viewed from the side of the electronic device (100), the side bezel structure (118) may have a first thickness (or width) on the side that does not include the first regions (110D) or the second regions (110E), and may have a second thickness that is thinner than the first thickness on the side that includes the first regions (110D) or the second regions (110E).

[0051] According to one embodiment, the first regions (110D) or the second regions (110E) may be formed as a plane so as to be non-bent and to form substantially one plane with the first surface (110A) or the second surface (110B).

[0052] According to one embodiment, the electronic device (100) may include at least one of a display (101), an audio module (103, 107, 114), a sensor module (104, 116, 119), a camera module (105, 112, 113), a key input device (117), a light emitting element (106), and a connector hole (108, 109). In some embodiments, the electronic device (100) may omit at least one of the components (e.g., the key input device (117) or the light emitting element (106)) or may additionally include other components.

[0053] In one embodiment, the display (101) may be exposed through, for example, a significant portion of the front plate (102). In some embodiments, at least a portion of the display (101) may be exposed through the front plate (102) forming the first side (110A) and the first areas (110D) of the side surfaces (110C). In some embodiments, the edges of the display (101) may be formed to be substantially identical to the adjacent outer shapes of the front plate (102). In some embodiments (not shown), the gap between the outer edges of the display (101) and the outer edges of the front plate (102) may be formed to be substantially identical to expand the area over which the display (101) is exposed.

[0054] According to one embodiment (not shown), a recess or opening may be formed in a part of a screen display area of ​​the display (101), and at least one of an audio module (114), a sensor module (104), a camera module (105), and a light-emitting element (106) may be included that are aligned with the recess or opening. In one embodiment (not shown), at least one of an audio module (114), a sensor module (104), a camera module (105), a fingerprint sensor (116), and a light-emitting element (106) may be included on a back surface of the screen display area of ​​the display (101). In one embodiment (not shown), the display (101) may be coupled to or disposed adjacent to a touch detection circuit, a pressure sensor capable of measuring the intensity (pressure) of a touch, and / or a digitizer capable of detecting a magnetic field-type stylus pen. In some embodiments, at least a portion of the sensor modules (104, 119) and / or at least a portion of the key input device (117) may be disposed in the first areas (110D) and / or the second areas (110E).

[0055] According to one embodiment (not shown), the audio module (103, 107, 114) may include a microphone hole (103) and a speaker hole (107, 114). The microphone hole (103) may have a microphone disposed inside to acquire external sound, and in some embodiments, multiple microphones may be disposed to detect the direction of the sound. The speaker hole (107, 114) may include an external speaker hole (107) and a receiver hole (114) for calls. In some embodiments, the speaker hole (107, 114) and the microphone hole (103) may be implemented as a single hole, or a speaker may be included without the speaker hole (107, 114) (e.g., a piezo speaker).

[0056] According to one embodiment, the sensor modules (104, 116, 119) may generate electrical signals or data values ​​corresponding to an internal operating state of the electronic device (100) or an external environmental state. The sensor modules (104, 116, 119) may include, for example, a first sensor module (104) (e.g., a proximity sensor) and / or a second sensor module (not shown) (e.g., a fingerprint sensor) disposed on a first surface (110A) of the housing (110) and / or a third sensor module (119) (e.g., an HRM sensor) and / or a fourth sensor module (116) (e.g., a fingerprint sensor) disposed on a second surface (110B) of the housing (110). The fingerprint sensor may be disposed on the first side (110A) of the housing (110) (e.g., the display (101) as well as the second side (110B). According to one embodiment, the electronic device (100) may further include at least one of a sensor module not shown, for example, a gesture sensor, a gyro sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a color sensor, an infrared (IR) sensor, a biometric sensor, a temperature sensor, a humidity sensor, or an illuminance sensor (104).

[0057] According to one embodiment, the camera modules (105, 112, 113) may include a first camera device (105) disposed on a first side (110A) of the electronic device (100), and a second camera device (112) and / or a flash (113) disposed on a second side (110B). In one embodiment, the camera devices (105, 112) may include one or more lenses, an image sensor, and / or an image signal processor. The flash (113) may include, for example, a light emitting diode or a xenon lamp. In some embodiments, two or more lenses (infrared camera, wide-angle and telephoto lenses) and image sensors may be disposed on one side of the electronic device (100).

[0058] According to one embodiment, the key input device (117) may be disposed on a side surface (110C) of the housing (110). In one embodiment, the electronic device (100) may not include some or all of the above-mentioned key input devices (117), and the key input devices (117) that are not included may be implemented in other forms, such as soft keys, on the display (101). In some embodiments, the key input device may include a sensor module (116) disposed on a second surface (110B) of the housing (110).

[0059] According to one embodiment, the light emitting element (106) may be disposed, for example, on the first surface (110A) of the housing (110). The light emitting element (106) may provide, for example, status information of the electronic device (100) in the form of light. In another embodiment, the light emitting element (106) may provide a light source that is linked to the operation of, for example, the camera module (105). The light emitting element (106) may include, for example, an LED, an IR LED, and a xenon lamp.

[0060] According to one embodiment, the connector holes (108, 109) may include a first connector hole (108) that can accommodate a connector (e.g., a USB connector) for transmitting and receiving power and / or data with an external electronic device, and / or a second connector hole (e.g., an earphone jack) (109) that can accommodate a connector for transmitting and receiving audio signals with an external electronic device.

[0061] FIG. 4 is an exploded perspective view of the electronic device of FIG. 1. Referring to FIG. 4, the electronic device (300) may include a side bezel structure (310), a first support member (311) (e.g., a bracket), a front plate (320), a display (330), a printed circuit board (340), a battery (350), a second support member (360) (e.g., a rear case), an antenna (370), and a rear plate (380). In some embodiments, the electronic device (300) may omit at least one of the components (e.g., the first support member (311) or the second support member (360)) or may additionally include other components. At least one of the components of the electronic device (300) may be identical to or similar to at least one of the components of the electronic device (100) of FIG. 1 or FIG. 2, and any redundant description will be omitted below.

[0062] According to one embodiment, the first support member (311) may be disposed inside the electronic device (300) and connected to the side bezel structure (310), or may be formed integrally with the side bezel structure (310). The first support member (311) may be formed of, for example, a metallic material and / or a non-metallic (e.g., polymer) material. The first support member (311) may have a display (330) coupled to one surface and a printed circuit board (340) coupled to the other surface.

[0063] According to one embodiment, the printed circuit board (340) may be equipped with a processor, memory, and / or an interface. The processor may include, for example, one or more of a central processing unit, an application processor, a graphics processing unit, an image signal processor, a sensor hub processor, or a communication processor. The memory may include, for example, volatile memory or non-volatile memory. The interface may include, for example, a high definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface. The interface may electrically or physically connect the electronic device (300) to an external electronic device, and may include, for example, a USB connector, an SD card / MMC connector, or an audio connector.

[0064] According to one embodiment, the battery (350) is a device for supplying power to at least one component of the electronic device (300), and may include, for example, a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell. At least a portion of the battery (350) may be disposed substantially on the same plane as, for example, the printed circuit board (340). The battery (350) may be disposed integrally within the electronic device (300), or may be disposed detachably from the electronic device (300).

[0065] In one embodiment, the antenna (370) may be positioned between the back plate (380) and the battery (350). The antenna (370) may include, for example, a near field communication (NFC) antenna, a wireless charging antenna, and / or a magnetic secure transmission (MST) antenna. In one embodiment, the antenna (370) may, for example, perform short-range communication with an external device or wirelessly transmit and receive power required for charging.

[0066] According to one embodiment, an antenna structure may be formed by a portion or combination of the side bezel structure (310) and / or the first support member (311).

[0067] An electronic device (100) according to embodiments of the present disclosure may include an electronic device such as a bar type, a foldable type, a rollable type, a sliding type, a wearable type, a tablet PC, and / or a notebook PC.

[0068] The electronic device (100) according to the embodiments of the present disclosure is not limited to the above-described examples and may include various other electronic devices.

[0069] Figure 5 is a cross-sectional view of line AA of Figure 2, and is an enlarged view of a portion thereof.

[0070] Referring to FIG. 5, an electronic device (300) (e.g., the electronic device (300) of FIG. 4) may be fixed to a housing a first support member (311) (e.g., a bracket) to support a substrate and a display. A display (330) may be fixed to the front of the first support member (311) (e.g., the bracket), and a front plate (320) may be disposed on the upper portion thereof. The front plate (320) may be fixed to the front of the electronic device (300) (e.g., the front (110A) of FIG. 2) in a manner in which it is attached to the first support member (311) (e.g., the bracket) by a first adhesive member. The front plate (320) may also be fixed to the first support member (311) (e.g., the bracket) by a first adhesive member in a manner corresponding to a shape at an end of the housing. The front plate (320) may be formed into a shape with a uniform thickness and a constant curvature. In one embodiment, the front plate (320) may include a flat portion (1011) and left and right curved portions (1012, 1013), all of which may be formed with a constant thickness.

[0071] According to one embodiment, a rear plate (380) mounted on the rear side of the electronic device (300) (e.g., the rear side (110B) of FIG. 2) may also be fixed to the housing by a second adhesive member. The rear plate (380) may be formed in a shape in which the thickness becomes thinner toward the left and right edges (e.g., a shape formed in a 2.5D manner). It may include a battery (350) and a second support member (360) (e.g., a rear case). The rear plate (380) may include a flat surface.

[0072] In one embodiment, the rear plate (380) may be attached to a second support member (360) (e.g., a rear case). The second support member (360) (e.g., a rear case) may have one side having a curvature similar to that of the rear plate (380), and at least a portion of the one side may additionally include an adhesive layer. The adhesive layer may securely attach the rear plate (380) to the second support member (360) (e.g., a rear case). In one embodiment, the rear plate (380) may further include an antenna module (not shown) on the rear. For example, the antenna module may be an NFC antenna, a wireless charging antenna, or an MST antenna. The rear plate (380) may further include a through hole (not shown) for assembly with peripheral components such as a camera, an HRM sensor, a flash, etc.

[0073] According to one embodiment, FIG. 6A is a cross-sectional view illustrating an optical film (400) according to embodiments of the present disclosure. According to one embodiment, FIGS. 6B and 6C are cross-sectional views illustrating a silicon-based thin film (410) of the optical film (400) of FIG. 6A according to embodiments of the present disclosure.

[0074] According to one embodiment, FIG. 6A may be a cross-sectional view of an optical film (400) applied to an electronic device (e.g., a front plate (102) or a back plate (111) of the electronic device (100) of FIGS. 2 and 3) or (e.g., a front plate (320) or a back plate (380) of the electronic device (300) of FIGS. 4 and 5).

[0075] According to one embodiment, the optical film (400) in FIGS. 6A, 6B, and 6C may include a silicon-based thin film (410). According to one embodiment, the silicon-based thin film (410) may be a multi-layer and may include two or more types of silicon-based thin films (e.g., 410a and 410b in FIG. 6A) or (e.g., 410a, 410b, 410c, and 410d in FIG. 6B) that have different refractive indices (n, optical refractive index), different components (e.g., nitrogen content), or both. According to one embodiment, the silicon-based thin film (410) may include a plurality of silicon-based thin films that have different refractive indices (n), different components, or both, arranged adjacently or continuously.

[0076] According to one embodiment, the refractive index (n) (e.g., optical refractive index) of the silicon-based thin film (410) is greater than about 1.489; greater than about 1.490; greater than about 1.500; greater than about 1.550; greater than about 1.600; greater than about 1.650; greater than about 1.700; greater than about 1.750; greater than about 1.800; greater than about 1.850; greater than about 1.900; greater than about 1.920; greater than about 1.940; greater than about 1.950; greater than about 1.960; greater than about 1.965; greater than about 1.970; greater than about 1.980; greater than about 1.990; greater than about 2.0; greater than about 2.200; greater than about 2.250; greater than about 2.270; greater than about 2.300; About 2.350 or higher; About 2.400 or higher; About 2.450 or higher; About 2.500 or higher; About 2.550 or higher; About 2.600 or higher; About 2.650 or higher; About 2.700 or higher; About 2.750 or higher; About 2.800 or higher; About 2.850 or higher; About 2.900 or higher; About 3.00 or lower; About 2.950 or lower; About 2.820 or lower; About 2.720 or lower; About 2.620 or lower; About 2.520 or lower; About 2.420 or lower; About 2.320 or lower; About 2.220 or lower; About 2.210 or lower; About 1.970 or lower; About 1.967 or lower; About 1.955 or lower; About 1.945 or lower; About 1.935 or lower; About 1.930 or less; About 1.910 or less; About 1.900 or less; About 1.890 or less; About 1.870 or less; About 1.820 or less; About 1.790 or less; About 1.730 or less; About 1.670 or less; About 1.630 or less; About 1.580 or less; About 1.530 or less; About 1.510 or less; or About 1.497 or less. The numerical values ​​mentioned here may be minimum, maximum, or average values. Here, the refractive index (n) may be the refractive index of each layer constituting the silicon-based thin film (410).

[0077] According to one embodiment, the silicon-based thin film (410) may include two or more single or multiple silicon-based thin films (e.g., 410a and 410b of FIG. 6a) (e.g., 410a, 410b, 410c, and 410d of FIG. 6b) having different refractive indices (n). In some embodiments, the refractive index (n) of at least one silicon-based thin film among the silicon-based thin films (410) may be greater than about 1.489 and less than about 1.967; greater than about 1.489 and less than or equal to about 1.960; greater than 1.489 and less than or equal to 1.950; greater than about 1.489 and less than or equal to about 1.900; greater than about 1.489 and less than or equal to about 1.895; or greater than about 1.489 and less than or equal to about 1.870. In some embodiments, the refractive index (n) of at least one of the silicon-based thin films (410) may be about 1.967 or greater and about 3.0 or less; about 1.980 to about 3.0 or less; or about 2.00 to about 3.0.

[0078] In one embodiment, the difference in refractive index (n) between adjacent layers within a plurality of layers of a silicon-based thin film (410) or between two or more silicon-based thin films (e.g., 410a and 410b) (e.g., 410a, 410b, and 410c) can be about 0.1 or greater; about 0.2 or greater; about 0.3 or greater; about 0.4 or greater; about 0.6 or greater; or from about 0.2 to about 1; from about 0.2 to about 0.7, or from about 0.2 to about 0.4. In some embodiments, the difference in refractive index (n) can be about 0.2 or greater. In some embodiments, by controlling this refractive index difference, an optical film having high surface hardness and high reflectivity (e.g., at a specific wavelength and at a specific reflectivity value) can be provided.

[0079] According to one embodiment, the silicon-based thin film (410) may include a silicon-based compound thin film including silicon (Si); oxygen (O); and nitrogen (N). According to one embodiment, the silicon-based compound thin film may include SiO x N y(wherein x and y are rational numbers greater than 0) (e.g., SiON), SiN, or both. In some embodiments, SiO x N y It exhibits high surface hardness. The refractive index can be adjusted depending on the nitrogen (N) composition. In some embodiments, at least one layer of the silicon-based thin film (410) is SiO x N y may include. In some embodiments, at least one layer of the silicon-based thin film (410) may include: SiO x N y and SiN; or may include SiN.

[0080] According to one embodiment, the nitrogen (N) content of at least one layer (e.g., 410a and 410b) of the silicon-based thin films (410) (e.g., 410a, 410b, and 410c) can be less than about 38%; less than or equal to about 36%; less than or equal to about 34%; less than or equal to about 32%; less than or equal to about 30%; less than or equal to about 28%; less than or equal to about 26%; less than or equal to about 22%; less than or equal to about 20%; less than or equal to about 18%; less than or equal to about 16%; less than or equal to about 14%; less than or equal to about 10%; less than or equal to about 5%; more than or equal to about 2%; more than or equal to about 4%; more than or equal to about 6%; more than or equal to about 8%; more than or equal to about 10%; more than or equal to about 12%; more than or equal to about 15%; more than or equal to about 18%; or more than or equal to about 20%. In some embodiments, the nitrogen (N) content may be greater than or equal to about 10% and less than or equal to about 38%. The values ​​mentioned herein may be minimum, maximum or average values.

[0081] According to one embodiment, the nitrogen (N) content of at least one layer (e.g., 410a and 410b) (e.g., 410a, 410b, and 410c) of the silicon-based thin film (410) may be about 38% or more; about 40% or more; about 46% or more; about 50% or more; about 60% or more; about 70% or more; about 80% or more; about 90% or more; about 100% or less; about 95% or less; about 85% or less; about 75% or less; about 60% or less; about 58% or less; about 55% or less; about 52% or less; about 48% or less; or about 42% or less; or about 40% or less. The values ​​mentioned herein may be minimum, maximum, or average values. Here, the nitrogen (N) content may be the nitrogen (N) content of each layer constituting the silicon-based thin film (410) or the nitrogen (N) content of the silicon-based compound.

[0082] According to one embodiment, the silicon-based thin film (410) may have no (e.g., 0%) difference in nitrogen (N) content between adjacent layers (e.g., 410a and 410b) (e.g., 410a, 410b, and 410c) (e.g., when the adjacent layers have the same refractive index) or may have a difference in nitrogen (N) content of about ± 1% or more; about ± 2% or more; about ± 5% or more; about ± 8% or more; about ± 10% or more; about ± 15% or more, or about ± 20% or more (e.g., when the adjacent layers have different refractive indices). Here, “±” may be determined as a positive or negative value depending on the type (or position) of the layer that serves as the basis for the difference in content. When the difference in nitrogen (N) content increases, the difference in refractive index may also increase.

[0083] According to one embodiment, the silicon-based thin film (410) can include a layer (e.g., referred to as a high refractive index layer or H layer) having a nitrogen (N) content of at least about 5%; at least about 10%; at least about 15%; or at least about 20% higher than a layer (e.g., referred to as a medium refractive index layer or M layer) having a nitrogen (N) content of less than about 38%. As the nitrogen (N) content increases, the refractive index can also increase.

[0084] In one embodiment, when the silicon-based thin film (410) includes layers (e.g., 410a and 410b) having two or more refractive indices (e.g., 410a, 410b, and 410c), the nitrogen (N) content between the layers having different refractive indices may be about ± 5% or more; about ± 8% or more; about ± 10% or more; or about ± 15% or more. Here, “±” may be determined as a positive or negative value depending on the type (or location) of the layer that serves as the basis for the difference in content. In some embodiments, the nitrogen (N) content of a layer having a refractive index (n) of about 2.0 to about 3.0 (e.g., high refractive index) is about 5% or more; about 8% or more; or about 10% or more than the nitrogen (N) content of a layer having a refractive index (n) of greater than 1.489 and less than 1.967 (e.g., middle refractive index). Or it could be about 15% higher.

[0085] According to one embodiment, the nitrogen (N) content of the layer (e.g., 410a and 410b) (e.g., 410a, 410b, and 410c) having the highest refractive index among the silicon-based thin films (410) may be about 5% or more; about 8% or more; about 10% or more; or about 15% or more higher than the nitrogen (N) content of the layer (e.g., 410a and 410b) (e.g., 410a, 410b, and 410c) having the lowest refractive index.

[0086] In one embodiment, at least one layer of the silicon-based thin film (410) may include a nitrogen (N) content of greater than or equal to about 18% and less than or equal to about 38%, and a refractive index (n) of greater than or equal to about 1.489 and less than or equal to about 1.967; greater than or equal to about 1.489 and less than or equal to about 1.960; or greater than or equal to about 1.489 and less than or equal to about 1.900. In some embodiments, at least one layer of the silicon-based thin film (410) may include a nitrogen (N) content of greater than or equal to about 38%; greater than or equal to about 40%; greater than or equal to about 50%; greater than or equal to about 80%; greater than or equal to about 90%; from about 40% to about 100%; from about 40% to about 50%, or from about 40% to about 56%, and a refractive index (n) of greater than or equal to about 1.967 and less than or equal to about 3.0; from about 1.980 to about 3.0; Or it may include a refractive index (n) of about 2.00 to about 3.0.

[0087] According to one embodiment, the silicon-based thin film (410) can implement optical interference induction by setting a refractive index difference (e.g., a refractive index difference of about 0.2 or more) through control of the nitrogen content between the layers.

[0088] In this document, the nitrogen (N) content is (Nitrogen (N) % / (Oxygen (O) %+Nitrogen (N) %) in one silicon-based thin film (layer), where % may be atomic % (at %). In some embodiments, the nitrogen (N) content may be based on one silicon-based thin film (layer) or silicon-based compound.

[0089] According to one embodiment, the silicon-based thin film (410) can be formed by controlling the composition or ratio of silicon (Si); oxygen (O), and nitrogen (N) by controlling the process conditions (e.g., the supply flow rate of raw materials) during the deposition process or the coating process. In some embodiments, the silicon-based thin film (410) can be formed by vapor deposition (e.g., sputtering, chemical vapor deposition (e.g., CVD)), e-beam, etc. In some embodiments, after loading the silicon (Si) target in the deposition (e.g., sputtering), the composition of these gases in the silicon-based thin film is controlled by controlling the flow rates of oxygen gas and nitrogen gas, thereby controlling the type of silicon-based compound (e.g., SiO). X N Y Or SiN) can be determined. In some embodiments, the refractive index of the thin film can be controlled by controlling the ratio of nitrogen (N) (e.g., nitrogen (N) content) by controlling the flow rates of oxygen gas and nitrogen gas after loading the silicon (Si) target in deposition (e.g., sputtering). In some embodiments, in deposition (e.g., sputtering), an oxygen gas flow rate of about 0 (sccm) to about 4 (sccm); greater than about 0 (sccm) to about 4 (sccm); or about 0.5 (sccm) to about 4 (sccm) and a nitrogen gas flow rate of about 1 (sccm) to about 4.5 (sccm) can be applied.

[0090] According to one embodiment, the thickness of the silicon-based thin film (410) is about 10 nm (nanometer) or more; about 20 nm (nanometer) or more; about 40 nm (nanometer) or more; about 60 nm (nanometer) or more; about 80 nm (nanometer) or more; about 100 nm (nanometer) or more; about 140 nm (nanometer) or more; about 160 nm (nanometer) or more; about 180 nm (nanometer) or more; about 200 nm (nanometer) or more; about 240 nm (nanometer) or more; about 280 nm (nanometer) or more; about 300 nm (nanometer) or more; about 340 nm (nanometer) or more; about 380 nm (nanometer) or more; about 400 nm (nanometer) or more; about 450 nm (nanometer) or more; about 500 nm (nanometer) or more; about 600 nm (nanometer) or more; About 700 nm(nanometer) or more; About 800 nm(nanometer) or more; About 1,000 nm(nanometer) or more; About 1,200 nm(nanometer) or more; About 2,000 nm(nanometer) or more; About 3,000 nm(nanometer) or more; About 4,000 nm(nanometer) or more; About 5,000 nm(nanometer) or more; About 6,000 nm(nanometer) or less; About 5,500 nm(nanometer) or less; About 4,500 nm(nanometer) or less; About 3,500 nm(nanometer) or less; About 2,500 nm(nanometer) or less; About 1,500 nm(nanometer) or less; About 900 nm(nanometer) or less; About 650 nm(nanometer) or less; About 450 nm(nanometer) or less; About 440 nm(nanometer) or less; About 420 nm (nanometer) or less; About 390 nm (nanometer) or less;About 360 nm(nanometer) or less; About 320 nm(nanometer) or less; About 260 nm(nanometer) or less; About 220 nm(nanometer) or less; About 190 nm(nanometer) or less; About 170 nm(nanometer) or less; About 130 nm(nanometer) or less; About 90 nm(nanometer) or less; About 70 nm(nanometer) or less; About 50 nm(nanometer) or less; or About 30 nm(nanometer) or less. The thickness ranges mentioned may be minimum, maximum, or average values. In some embodiments, the thickness of the silicon-based thin film (410) is from about 10 nm(nanometer) to about 6,000 nm(nanometer); from about 500 nm(nanometer) to about 6,000 nm(nanometer); from about 500 nm(nanometer) to about 2,500 nm(nanometer); About 700 nm(nanometer) to about 2,500 nm(nanometer); About 100 nm(nanometer) to about 1,500 nm(nanometer); About 10 nm(nanometer) to about 450 nm(nanometer); About 20 nm(nanometer) to about 300 nm(nanometer); or About 30 nm(nanometer) to about 200 nm(nanometer). In some embodiments, the thickness mentioned may correspond to the thickness of one layer or the entire layer of the silicon-based thin film (410). By applying the thickness range mentioned in some embodiments, useful optical interference can be induced, substrate warpage can be suppressed, and the critical incident angle range at which complementary reflection occurs can be secured or expanded.;

[0091] According to one embodiment, referring to FIG. 6c, the optical film (400) may further include a silicon oxide thin film (420) including an oxide-based compound (e.g., SiO2). The silicon oxide thin film (420) may be a single layer or multiple layers. In some embodiments, the silicon oxide thin film (420) may be disposed within or below the silicon-based thin film (410) (e.g., 420 of FIG. 6c). According to one embodiment, the silicon oxide thin film (420) may be included within a thickness range of about 20% or less; less than about 20%; about 15% or less; about 10% or less; about 5% or less; about 2% or less; about 1% or less; 0.5% or less; or about 0% of the total thickness of the optical film (400). This may be the thickness of one layer or the entire thickness of the silicon oxide thin film (420). In some embodiments, the thickness of the silicon oxide thin film (420) may be about 50 nm (nanometer) or less; about 40 nm (nanometer) or less; about 30 nm (nanometer) or less; about 20 nm (nanometer) or less; about 10 nm (nanometer) or less; or about 5 nm (nanometer) or less. The thickness ranges mentioned may be minimum, maximum, or average values. In some embodiments, the optical film (400) may secure color stability by introducing the silicon oxide thin film (420) while increasing hardness (e.g., surface hardness) due to the silicon-based thin film (420). In some embodiments, the silicon oxide thin film (420) may reduce the decrease in hardness and deterioration of mechanical properties (e.g., scratch resistance, etc.) due to the oxide-based compound by applying the mentioned thickness. In some embodiments, the silicon oxide thin film (420) can remove yellow color tones and narrow-band reflection peaks by applying the mentioned thickness, implement sharp reflection peaks, or filter out specific wavelengths.

[0092] According to one embodiment, the optical film (400) may have improved mechanical properties (e.g., high hardness) and optical properties by using a silicon-based thin film (410). According to one embodiment, the surface hardness (e.g., indentation hardness) of the optical film (400) may be about 12 Gpa (Giga pascal) or more. In some embodiments, the surface hardness of the optical film (400) may be about 12 Gpa (Giga pascal) or more; about 13 Gpa (Giga pascal); about 14 Gpa (Giga pascal) or more; or about 15 Gpa (Giga pascal) or more at an indentation depth of about 200 nm (nanometer) to about 400 nm (nanometer). In some embodiments, the surface hardness may be about 12 Gpa (Giga pascal) or more at an indentation depth of about 200 nm (nanometer). In some embodiments, the indentation hardness can be measured using standard methods known in the art. In some embodiments, the indentation hardness can be measured using the "Berkovich Indenter Hardness Test," which involves contacting a tip with a thin film surface, applying a predetermined load, and then measuring the area (e.g., displacement) of the tip shape impressed, thereby calculating the hardness (e.g., hardness based on an indentation depth of up to about 50 nm (nanometer)) and modulus value.

[0093] According to one embodiment, the residual stress of the optical film (400) may be greater than or equal to about 300 Mpa (Mega Pascal); about 350 Mpa (Mega Pascal); or about 400 Mpa (Mega Pascal). In some embodiments, the residual stress may be measured using a standard method known in the art of the present disclosure. In some embodiments, the residual stress of the thin film may be calculated using the curvature value (deflection amount, R) of the specimen using the following equation, "Stoney equation."

[0094] [ceremony]

[0095]

[0096] (σ: stress, Es: substrate Young's modulus, hs: substrate thickness, hf: film thickness, Vs: Poisson's ratio, R: radius of curvature or curvature value)

[0097] According to one embodiment, the reflectivity of the optical film (400) may be about 10% or greater; about 15% or greater; about 20% or greater; about 25% or greater; about 30% or greater; about 35% or greater; about 40% or greater, or about 50% or greater. In some embodiments, the reflectivity of the optical film (400) may be about 10% or greater in a reflection spectrum (i.e., a reflection waveform spectrum) of a wavelength of about 400 nm (nanometer) to about 700 nm (nanometer). According to one embodiment, the color tone of the optical film (400) may exhibit a color tone in which the a*b* value measured as the color difference value of reflected light in a reflection spectrum of a wavelength of about 400 nm (nanometer) to about 700 nm (nanometer) is about 2 or greater. In addition, these optical characteristics may be precisely adjusted by the admittance coating layer of the laminated structure. In some embodiments, the optical properties mentioned can utilize standard methods known in the art of the present disclosure. In some embodiments, the transmittance and color coordinates of the product can be measured using a spectrophotometer (e.g., Konica Minolta CM-3700A) based on the standards established by the International Commission on Illumination (CIE). This can be done by measuring the amount of light transmitted through the object (transmittance) after a CIE standard illuminant is incident perpendicularly on the surface of the object to be measured, or by digitizing the color value of the light reflected from the inner surface of an integrating sphere (e.g., CIE1976 or CIE2000 logic) and displaying it as a color coordinate.

[0098] According to one embodiment, referring to FIGS. 6A, 6B, and 6C, the optical film (400) may include multiple layers (the silicon-based thin film (410) of FIG. 6A) including at least two or more types of silicon-based thin films (e.g., 410a and 410b) (e.g., 410a, 410b, 410c, and 410d). According to one embodiment, the optical film (400) may include two or more types of silicon-based thin films having different refractive indices, different components, or both. According to one embodiment, the two or more types of silicon-based thin films may be regularly or randomly stacked. According to one embodiment, the two or more types of silicon-based thin films may include the refractive indices, different components (e.g., nitrogen content), and different thicknesses, etc., mentioned in the optical film (400) of FIG. 6A. In one embodiment, the two or more silicon-based thin films may include a refractive index difference of 0.2 or more between adjacent layers when the adjacent layers are different. In one embodiment, the two or more silicon-based thin films may be classified based on a nitrogen content of about 38% between adjacent layers when the adjacent layers are different.

[0099] According to one embodiment, the optical film (400) may include a stacking unit in which silicon-based thin films (410) are sequentially cross-laminated on at least a portion or the entirety of the optical film (400). In some embodiments, the optical film (400) may include a stacking unit in which silicon-based thin films (410) are stacked in order of decreasing refractive index, a stacking unit in which silicon-based thin films (420) are stacked in order of increasing refractive index, or both. In some embodiments, the stacking unit may be repeated one or more times; two or more times; five or more times; ten or more times; twenty or more times; or thirty or more times. In some embodiments, two or more different stacking units may be repeatedly cross-laminated. In some embodiments, the stacking unit (A1) and the stacking unit (A2) may be [stacked unit (A1) / stacked unit (A2)]. N(wherein N represents the number of repetitions and may be an integer of 1 or more; 2 or more; 5 or more; 10 or more; 20 or more; or 30 or less.) may be laminated. Each laminated unit may include one or more silicon-based thin films (410) (e.g., 410a and 410b) (e.g., 410a, 410b, and 410c) having a different refractive index, component, or both from the adjacent laminated units. In some embodiments, the laminated units may have different average refractive index, component, or both from the adjacent laminated units. In some embodiments, the laminated units may have the same or different lamination method from the adjacent laminated units.

[0100] According to one embodiment, the multi-layer silicon-based thin film (410) in FIGS. 6a, 6b, and 6c may include a first silicon-based thin film (410a) and a second silicon-based thin film (410b) having different nitrogen contents and refractive indices. According to one embodiment, the first silicon-based thin film (410a) and the second silicon-based thin film (410b) may be single or multi-layered.

[0101] In one embodiment, in the case of multiple layers, n first silicon-based thin films (410a) and m second silicon-based thin films (410b) are cross-stacked, and this cross-stacking can be repeated l times. This stacking is [(410a) n / (410b) m ] l , and n and m are each an integer of 1 or more; an integer of 1 to 10; an integer of 1 to 6; or an integer of 1 to 3, and l can be an integer of 1 or more; 2 or more; 2 to 10; 2 to 8; 2 to 5; or 2 to 3.

[0102] According to one embodiment, the multi-layer silicon-based thin film (410) may include a first silicon-based thin film (410a), a second silicon-based thin film (410b), and a third silicon-based thin film (410c) having different nitrogen contents and refractive indices. These may be regularly or randomly stacked. Such stacking may be performed by [(410a) n / (410b) m / (410c) k ] h , and n, m and k are each an integer of 1 or more; an integer of 1 to 10; an integer of 1 to 6; or an integer of 1 to 3, and h can be an integer of 1 or more; 2 or more; 2 to 10; 2 to 8; 2 to 5; or 2 to 3.

[0103] In one embodiment, in the case of multiple layers, it includes two or more stacked units, which may be sequentially stacked or cross-stacked. Such stacking may include a first stacked unit and [(410a) n / (410b) m ] l and the second layered unit [(410c) k / (410d) i ] h , and n, m, k and i are each an integer of 1 or more; an integer of 1 to 10; an integer of 1 to 6; or an integer of 1 to 3, and l and h are each an integer of 1 or more; 2 or more; 2 to 10; 2 to 8; 2 to 5; or 2 to 3. In some embodiments, their intersection may be 1 or more; 2 or more; 5 or more; 8 or more; or 10 or more. In some embodiments, the first stacked unit and the second stacked unit may include entirely different silicon-based thin films, and may include partially different or partially identical silicon-based thin films. In some embodiments, the stacking order of the first stacked unit and the second stacked unit may be variously changed.

[0104] According to one embodiment, a silicon oxide thin film (420) may be further disposed within, below, or between the stacking units mentioned in FIG. 6c. According to one embodiment, the stacking unit mentioned may be disposed on the silicon oxide thin film (420).

[0105] According to one embodiment, the first silicon-based thin film (410a) may include a refractive index greater than 1.489 and less than 1.967 and a nitrogen content less than about 38% nitrogen. According to one embodiment, thin films other than the first silicon-based thin film (410a) (e.g., second, third, etc. silicon-based thin films; 410b, 410c, etc.) may have a refractive index (n) and a nitrogen content different from that of the first silicon-based thin film (410a). In some embodiments, the thin films (410b, 410c, etc.) may have a refractive index (n) that is about 0.2 or higher than that of the first silicon-based thin film (410a). In some embodiments, the refractive index of the thin films (410b, 410c, etc.) may be about 2.0 to about 3.0. In some embodiments, the nitrogen (N) content of the thin film (410b, 410c, etc.) may be about 5% higher than that of the first silicon-based thin film (410a).

[0106] According to one embodiment, the nitrogen content of the first silicon-based thin film (410a) is less than about 38%; less than or equal to about 30%; greater than or equal to about 10% and less than about 38%; greater than or equal to about 15% and less than about 38%, or between about 15% and about 24%, and the nitrogen content of the thin films (410b, 410c, etc.) other than the first silicon-based thin film (410a) may be at least 5% higher than the nitrogen content of the first silicon-based thin film (410a). In some embodiments, the nitrogen content of the thin films (410b, 410c, etc.) may be at least about 38%; greater than or equal to about 40%; greater than or equal to about 50%; greater than or equal to about 60%; greater than or equal to about 70%; between about 45% and about 60%; or between about 48% and about 56%.

[0107] According to one embodiment, the first silicon-based thin film (410a) is SiO X N Y Including the first silicon-based thin film (410a), the thin films (410b, 410c, etc.) other than the first silicon-based thin film (410a) are made of SiO X N Y , SiN or a combination thereof.

[0108] FIG. 7 illustrates a configuration of a laminated structure including an optical film of the present disclosure (e.g., the optical film (400) of FIG. 6) according to embodiments.

[0109] According to one embodiment, FIG. 7 may be a cross-sectional view of a laminated structure (500) applied to an electronic device (e.g., a front plate (102) and a back plate (111) of the electronic device (100) of FIGS. 2 and 3) or (e.g., a front plate (320) or a back plate (380) of the electronic device (300) of FIGS. 4 and 5). In FIG. 7, the laminated structure (500) may include a substrate (510); an optical film layer (520); and a functional layer (530).

[0110] According to one embodiment, the substrate (510) may be the outermost layer of an electronic device (e.g., the front plate (102) and the back plate (111) of the electronic device (100) of FIGS. 2 and 3) or (e.g., the front plate (320) or the back plate (380) of the electronic device (300) of FIGS. 4 and 5). In some embodiments, the substrate (510) may include at least one of glass, metal, or plastic, or a combination thereof.

[0111] According to one embodiment, the substrate (510) can be applied without limitation as long as it is a substrate applicable to an electronic device (e.g., an outer plate of the electronic device (100) of FIGS. 2 and 3) or an electronic device housing. In some embodiments, the substrate (510) can be an optically transparent or opaque substrate. In some embodiments, the substrate (510) can be a transparent substrate, such as a glass substrate (e.g., a tempered glass substrate). In some embodiments, a glass substrate (e.g., a tempered glass substrate) can provide an aesthetic design as the coating color tone or reflective effect on the front surface of the substrate is mutually blended with the paint or paint color on the back surface of the substrate. In some embodiments, the transparent substrate can be a glass substrate (e.g., a tempered glass substrate), a transparent polymer resin substrate (e.g., a transparent thermosetting polymer resin, etc.). In some embodiments, the transparent substrate can be a thin film (e.g., a film, a foil, or a sheet) including a metallic material (e.g., a metal (e.g., aluminum), an alloy (e.g., SUS stainless steel), aluminum having an oxide film, etc.).

[0112] According to one embodiment, the optical film layer (520) may include an optical film according to embodiments of the present disclosure (e.g., (400) of FIG. 6a). According to one embodiment, the optical film (520) (e.g., (400) of FIG. 6a) may simultaneously exhibit high mechanical properties, such as scratch resistance, and optical properties, such as high brightness and high reflectivity. According to one embodiment, the optical film (520) (e.g., (400) of 6a) may have a thickness of about 30 nm (nanometer) or more.

[0113] According to one embodiment, a buffer layer (540), a transparent adhesive layer (550, not shown in the drawing), or both, may be further included between the substrate (510) and the optical film layer (520). In some embodiments, the buffer layer (540) may include a metal (e.g., zirconium (Zr), titanium (Ti), aluminum (Al), etc.), an oxide (e.g., silicon dioxide), etc. In some embodiments, the buffer layer (540) may be a deposited film, a coating film, a film, a sheet, etc. In some embodiments, the buffer layer may be formed by thin film growth on the substrate (510) using a vapor deposition method. According to one embodiment, the thicknesses of the buffer layer (540) and the transparent adhesive layer (550) may each be about 5 nm (nanometer) to about 450 nm (nanometer). By applying the mentioned thickness range, an optical film layer (520) can be stably formed on a substrate (510). In some embodiments, the transparent adhesive layer (550) may include a carbon compound composed of at least one or more of an amine group, a silane group, a carboxyl group, or a combination thereof, to reduce the risk of substrate damage by buffering the substrate layer (510) and the buffer layer (540). In some embodiments, the carbon compound layer (550) may be disposed between the substrate layer (510) and the buffer layer (540).

[0114] According to one embodiment, the functional layer (530) may include an admittance compensation layer (530a), a functional coating layer (530b), or both.

[0115] According to one embodiment, the admittance compensation layer (530a) may be disposed on top of the optical film layer (520) to correct the optical admittance value (e.g., to precisely adjust the optical tone and reflectance specifications). In some embodiments, the admittance compensation layer (530a) is a layer disposed between the optical film layer (520) and the functional coating layer (530b) to more precisely adjust the optical tone and reflectance specifications. In some embodiments, the admittance compensation layer (530a) may adjust the reflectance or tone by interpolating the wave phase of an optical thin film formed of a medium or high refractive index of the optical film layer (520).

[0116] According to one embodiment, the admittance compensation layer (530a) includes a metal oxide, a metal fluoride, etc., which may be nitrided if necessary. In some embodiments, the admittance compensation layer (530a) may include at least one of SiO2, Al2O3, HfO2, Y2O3, MgF2, CaF2, LaF3, Na3AlF6, SiON, or a combination thereof.

[0117] According to one embodiment, the admittance compensation layer (530a) is disposed on the surface of the optical film layer (520) and may have a thickness of about 5 nm (nanometer) to about 400 nm (nanometer) to provide a compensation function. In some embodiments, since it is a functional thin film for phase interpolation, it may have a thickness equal to or thinner than the last layer of the optical film layer (520).

[0118] According to one embodiment, the admittance compensation layer (530a) may be formed by vapor deposition. In some embodiments, it may be formed in a continuous process with the optical film layer (520) using the same deposition method (e.g., vapor deposition) as the optical film layer (520).

[0119] According to one embodiment, the functional coating layer (530b) may be an anti-fingerprint (AF) coating layer, an anti-smudge (AS) coating, or an invisible-fingerprint (IF) coating. In some embodiments, the functional coating layer (530b) may be an organic coating layer for contamination prevention (e.g., anti-staining, anti-fouling, or anti-fingerprint) and easy cleaning, and may further include an inorganic material if necessary. In some embodiments, the organic coating layer may be, but is not limited to, a water-repellent coating, a polymethyl methacrylate (PMMA) coating, or a fluorine-based coating agent. In some embodiments, the functional coating layer applied in vacuum deposition may include a fluorine-based silane compound for fingerprint contamination prevention and easy cleaning.

[0120] According to one embodiment, the thickness of the functional coating layer (530b) may be about 5 nm (nanometer) to about 400 nm (nanometer). This can prevent contamination, etc. while maintaining the optical properties of the optical film layer (520).

[0121] According to one embodiment, the laminated structure (500) can have improved mechanical properties (e.g., high hardness) and optical properties by using a silicon-based thin film (520) (e.g., 410 of FIG. 4). According to one embodiment, the laminated structure (500) (e.g., optical film layer (520)) can have a surface hardness of about 12 Gpa (Giga pascal) or more. In some embodiments, the surface hardness (e.g., indentation hardness) of the laminated structure (500) (e.g., optical film layer (520)) can be about 12 Gpa (Giga pascal) or more at an indentation depth of about 200 nm (nanometer) to about 400 nm (nanometer). In some embodiments, the indentation depth can be about 12 Gpa (Giga pascal) or more at an indentation depth of about 200 nm (nanometer). In some embodiments, the indentation hardness may be measured by the standard method described in the description for FIG. 6a.

[0122] According to one embodiment, the residual stress of the laminated structure (500) (e.g., the optical film layer (520)) may be greater than or equal to about 300 Mpa (Mega Pascal). In some embodiments, the residual stress may be measured using the standard method described in the description for FIG. 6a.

[0123] According to one embodiment, the reflectivity of the laminated structure (500) (e.g., the optical film layer (520)) can be about 10% or more; about 15% or more; about 20% or more; about 25% or more; about 30% or more; about 35% or more; about 40% or more, or about 50% or more. In some embodiments, the reflectivity of the laminated structure (500) can be about 10% or more in a reflection spectrum of a wavelength of 400 nm (nanometer) to 700 nm (nanometer). According to one embodiment, the color tone of the laminated structure (500) can be adjusted by the admittance compensation layer (530a), and can exhibit a color tone in which the a*b* value measured as the color difference value of reflected light in a reflection spectrum of a wavelength of 400 nm (nanometer) to 700 nm (nanometer) is about 2 or more. These optical properties can be measured by the standard method described in the description for Fig. 6a.

[0124] Example

[0125] Example 1

[0126] A high-hardness optical film ([M / H]) is obtained by cross-stacking a medium-refractive material (SiON; M) containing 18 at% to 24 at% of nitrogen and having a refractive index of 1.5 or more; and a high-refractive material layer (SiN; H) containing 48 at% to 56 at% of nitrogen and having a refractive index of 2.0 or more, and repeating the stacking 15 times. 15 ) was fabricated. The thickness of each layer is about 5 nm (nanometer) to about 10 nm (nanometer).

[0127] Example 2

[0128] A silicon oxide layer (SiO2) (L) is placed as a lower layer, and an optical film (L / [M / H]) having the same structure as Example 1 is placed on the silicon oxide layer (SiO2) (L). 15 ) was fabricated. The thickness of each layer is about 10 nm (nanometer) to about 20 nm (nanometer).

[0129]

[0130] The reflection spectrum (e.g., reflection waveform) of the optical film of Example 1 was measured from 400 nm (nanometer) to 700 nm (nanometer), and as a result, a blue (light blue) hue and a reflectance characteristic of 27% were confirmed through reflection peaks at 470 nm (nanometer) and 535 nm (nanometer). Both Examples 1 and 2 have a color difference of a*b* 2 or more.

[0131] According to one embodiment, the optical film of the present disclosure can exhibit a surface hardness of 12.0 (GPa) or more and a residual stress of 300 or more without disposing a separate high-hardness layer by cross-stacking a medium-refractive-index layer and a high-refractive-index layer, and can provide optical properties such as high reflectivity.

[0132] In Table 1, hardness was measured using the “Berkovich indenter hardness test method,” and reflectance was measured using a spectrophotometer (e.g., Konica Minolta CM-3700A).

[0133] Residual stress is calculated using the Stoney equation and the bending amount (H is the substrate height, W is the substrate width; the average value of three measurements) was measured and calculated.

[0134] In one embodiment, the term "coating" in this document may include, but is not limited to, spin coating, spray coating, flow coating, bar coating, die coating, slot coating, blade coating, knife coating, reverse coating, transfer roll coating, gravure roll coating, cast coating, slot orifice coating, calendar coating, and the like.

[0135] In one embodiment, “deposition” in this document may use vapor deposition (e.g., sputtering, chemical vapor deposition, physical vapor deposition, etc.), e-beam, etc., but is not limited thereto.

[0136] In one embodiment, an optical film (e.g., optical film (400) of FIG. 6A) or a laminated structure (e.g., laminated structure (500) of FIG. 7) may be included in at least a portion of the exterior of the electronic device. In one embodiment, the electronic device may include the laminated structure or cover on the front or back.

[0137] According to one embodiment, the laminated structure (e.g., the laminated structure (500) of FIG. 7) according to embodiments of the present disclosure may be disposed on the front, rear, or front and rear sides of the electronic device, respectively. That is, it may be a cover (600) of the electronic device. In some embodiments, FIG. 8A is a perspective view showing a laminated structure (e.g., the laminated structure (500) of FIG. 7) mounted on the front side of an electronic device according to embodiments of the present disclosure, viewed from the front, top, and side.

[0138] According to one embodiment, the laminated structure (e.g., the laminated structure (500) of FIG. 7) in FIG. 8A may be mounted on a bezel printing line (610, 620, 630) of a display window (601) of a front plate (600A) of an electronic device (e.g., the front plate (102) of the electronic device (100) of FIGS. 2 and 3) or (e.g., the front plate (320) of the electronic device (300) of FIGS. 4 and 5).

[0139] According to one embodiment, the front plate (600A) may include a curved portion in which a flat bezel area (610), an upper bezel area (620) located above the flat bezel area (610), and a lower bezel area (630) located below the flat bezel area (610) are bent based on the display area (601). A laminated structure having a shape corresponding thereto (e.g., the laminated structure (500) of FIG. 7) may be arranged.

[0140] According to one embodiment, FIG. 8b is a perspective view showing a laminated structure or cover mounted on the back of an electronic device according to embodiments of the present disclosure, viewed from the front, top, and side.

[0141] According to one embodiment, the cover in FIG. 8B may be mounted on a back plate (600B) of the electronic device (e.g., the back plate (111) of the electronic device (100) of FIGS. 2 and 3) or (e.g., the back plate (380) of the electronic device (300) of FIGS. 4 and 5).

[0142] According to one embodiment, the back plate (600B) may include a flat portion (640), a left region (660), a right region (670), an upper region (680), and a lower region (690) which are each curved. A cover having a corresponding shape (e.g., a laminated structure (500) of FIG. 7) may be placed thereon.

[0143] According to one embodiment, an electronic device (e.g., electronic device (100) of FIGS. 2 and 3) or (e.g., electronic device (300) of FIGS. 4 and 5) may include an optical film (e.g., optical film (400) of FIG. 6A) or a laminated structure (e.g., laminated structure (500) of FIG. 7) (i.e., a cover) according to embodiments of the present disclosure.

[0144] In one embodiment, the electronic device may be a mobile electronic device.

[0145] In one embodiment, the electronic device may be a portable electronic device. In some embodiments, the portable electronic device may be a portable phone, a tablet PC, a laptop, an augmented reality (AR) device, or the like.

[0146] According to one embodiment, an optical film (e.g., optical film (400) of FIG. 6A) or a laminated structure (e.g., laminated structure (500) of FIG. 7) according to embodiments of the present disclosure can be applied to a surface of a cover (i.e., an outer housing) of a portable electronic device in a thin film thickness, and can provide high surface hardness and high brightness optical properties.

[0147] In the related technical field, it may include a substrate on which an optical coating is disposed on the outer surface of an electronic device (e.g., an outer housing surface), a high-hardness layer, and additional functional layers (e.g., a coating layer and an anti-fouling layer). When a multilayer thin film is created by selecting a material based on the refractive index during the design of the optical coating, the low density of low-hardness materials (e.g., low-refractive materials) within the thin film stack results in low hardness characteristics, and a decrease in the surface hardness of the entire coating layer occurs. Since there is a possibility of damage to the optical coating due to scratches or abrasion from the outside, it is necessary to additionally place a separate, hard protective layer on top of the optical coating with low mechanical properties. Therefore, a multilayer interference stack is formed by repeatedly stacking two or more low-refractive-high refractive materials selected based on the refractive index, and a separate, high-hardness layer is additionally placed on top of the interference stack. This is a structure that protects the multilayer interference stack under the high-hardness layer from scratch damage, and is applied to optical design. However, a thick thickness is required to secure a multilayer interference stack with gloss and color and a high-hardness layer with high hardness, and the optical coating structure requires increased process time to form a high-hardness layer, a high frequency of foreign matter inflow, and high coating manufacturing costs.

[0148] In addition, as the thickness of a single thin film of silicon nitride or nitride constituting the high-hardness layer increases, a deformation problem causing warping of the substrate plate may occur. When nitrogen ions are implanted into the Si film during the step of forming the high-hardness layer thin film on the surface of the optical coating layer, tensile stress is generated inside the high-hardness layer thin film during the silicon compound reaction process, which may cause a warping phenomenon caused by a stress imbalance between the front and back of the substrate plate. Moreover, when forming the high-hardness layer on a thin film (e.g., a tempered glass substrate with a thickness of 0.6 t or less) due to this internal tensile stress of the thin film, it can be easily broken by a small impact, making it difficult to apply an optical film having a high-hardness layer.

[0149] Accordingly, the present disclosure, according to one embodiment, can provide an optical film having improved optical properties and obtaining mechanical properties at a level or a high level required for an application field (e.g., an electronic device housing or an electronic device) by laminating two or more kinds of silicon-based thin films (410) having different components (e.g., nitrogen composition ratio), refractive indices, or both. According to one embodiment, the present disclosure can provide a scratch-resistant and high-brightness optical film having high hardness (e.g., indenter hardness), high reflectivity, and color tone performance without having a separate high-hardness layer. According to one embodiment, the present disclosure can provide an optical film that can be applied on a housing of an electronic device (e.g., a tempered glass thin film having a thickness of 0.5 t or less).

[0150] According to one embodiment, the present disclosure can provide an optical film with improved mechanical strength and optical properties without having a low-refractive material and a high-hardness layer that can cause low mechanical properties of the optical film. This can enable the optical film to be manufactured with a thinner thickness, prevent substrate warpage due to residual stress, etc., and reduce the occurrence of physical damage (e.g., breakage, warping, substrate warpage deformation, etc.) even when applied to a thin film (e.g., a tempered glass film having a thickness of about 0.5 t or less).

[0151] According to one embodiment, the present disclosure enables the production of a thin optical film (layer), which can shorten the manufacturing process time (e.g., vapor deposition process time) and improve process efficiency and cost.

[0152] According to one embodiment, by applying the optical film (layer) of the present disclosure, a scratch-resistant and high-brightness laminated structure having high hardness (e.g., indenter hardness), high reflectivity, and color performance is realized without having a separate high-hardness layer, and this can be applied to an external housing of an electronic device.

[0153] According to embodiments of the present disclosure, an optical film (400) includes two or more types of silicon-based thin films (410) having a refractive index (n) exceeding 1.489; and the two or more types of silicon-based thin films (410) may have different refractive indices.

[0154] According to one embodiment, the two or more silicon-based thin films (410) may have different nitrogen contents, and may include a silicon-based thin film having a nitrogen content of less than about 38% among the two or more silicon-based thin films (410).

[0155] According to one embodiment, two or more types of silicon-based thin films (410) may have a refractive index difference of about 0.2 or more from each other.

[0156] According to one embodiment, the optical film (400) may include a first silicon-based thin film (410) comprising a silicon-based compound having a nitrogen content of less than about 38% and a refractive index greater than about 1.489 and less than about 1.967; and a second silicon-based thin film (410) comprising a silicon-based compound having a nitrogen content of at least about 5% higher than that of the first silicon-based thin film and having a refractive index higher than that of the first silicon-based thin film.

[0157] According to one embodiment, the thickness of the silicon-based thin film (410) may be from about 10 nm (nanometer) to about 6,000 nm (nanometer).

[0158] According to one embodiment, the optical film (400) may include a laminated unit in which silicon-based thin films are sequentially cross-laminated on at least a portion or the entirety of the optical film.

[0159] According to one embodiment, the optical film (400) includes a stacking unit in which silicon-based thin films (410) are stacked in order of decreasing refractive index, a stacking unit in which silicon-based thin films (410) are stacked in order of increasing refractive index, or both, and the stacking unit may be repeated once or twice or more.

[0160] According to one embodiment, the optical film (400) may further include a silicon oxide thin film (420); and the silicon oxide thin film (420) may comprise less than about 20% of the thickness of the optical film.

[0161] According to one embodiment, the optical film (400) may include at least one or more of the following or a combination thereof: a reflectance of about 10% or more in a reflection spectrum from about 400 nm (nanometer) to about 700 nm (nanometer); a color tone having an a*b* value of 2 or more as measured by a color difference value; a residual stress of about 300 Mpa (Mega Pascal) or more; or a surface hardness of about 12 Gpa (Giga Pascal) or more at an indentation depth of about 200 nm (nanometer).

[0162] According to embodiments of the present disclosure, a laminated structure (500) includes a glass substrate (510); and an optical film layer (520); wherein the optical film layer (520) includes two or more types of silicon-based thin films (e.g., 410 in FIG. 6A) having a refractive index (n) greater than about 1.489; and the two or more types of silicon-based thin films (e.g., 410 in FIG. 6A) may have different refractive indices.

[0163] According to one embodiment, two or more silicon-based thin films (e.g., 410 in FIG. 6a) may have different nitrogen contents, and include a silicon-based thin film (e.g., 410 in FIG. 6a) having a nitrogen content of less than about 38% among the two or more silicon-based thin films (e.g., 410 in FIG. 6a).

[0164] According to one embodiment, two or more silicon-based thin films (e.g., 410 in FIG. 6a) may have a refractive index difference of about 0.2 or more from each other.

[0165] According to one embodiment, the optical film layer (520) may include a first silicon-based thin film (e.g., 410 in FIG. 6A) comprising a silicon-based compound having a nitrogen content of less than about 38% and a refractive index greater than about 1.489 and less than about 1.967; and a second silicon-based thin film (e.g., 410 in FIG. 6A) comprising a silicon-based compound having a nitrogen content of at least 5% higher than that of the first silicon-based thin film and having a refractive index higher than that of the first silicon-based thin film.

[0166] In one embodiment, the thickness of the silicon-based thin film (e.g., 410 in FIG. 6A) may be from about 10 nm (nanometer) to about 450 nm (micrometer).

[0167] According to one embodiment, the optical film layer (520) may include a laminated unit in which silicon-based thin films are sequentially cross-laminated on at least a portion or the entirety of the optical film layer.

[0168] According to one embodiment, the optical film layer (520) includes a stacked unit in which silicon-based thin films (e.g., 410 in FIG. 6A) are stacked in order of decreasing refractive index, a stacked unit in which silicon-based thin films (e.g., 410 in FIG. 6A) are stacked in order of increasing refractive index, or both, and the stacked unit may be repeated once or twice or more.

[0169] According to one embodiment, the optical film layer (520) further includes a silicon oxide thin film (e.g., 420 in FIG. 4);

[0170] The silicon oxide thin film may comprise less than about 20% of the thickness of the optical film layer (520).

[0171] According to one embodiment, the optical film layer (520) may include at least one or more of the following or a combination thereof: a reflectance of about 10% or more in a reflection spectrum from about 400 nm (nanometer) to about 700 nm (nanometer); a color tone having an a*b* value of about 2 or more as measured by a color difference value; a residual stress of about 300 Mpa (Mega Pascal) or more; or a surface hardness of about 12 Gpa (Giga Pascal) or more at an indentation depth of about 200 nm (nanometer).

[0172] According to one embodiment, the optical film layer (520) and the substrate (510) further include a buffer layer (540); wherein the buffer layer may include at least one or more of a polymer, an oxide, a metal, an intermetallic compound, or an alloy, or a combination thereof.

[0173] According to one embodiment, the optical film layer (520) may further include an anti-fingerprint (AF) coating layer (530b); an administrative compensation layer (530a); or all of these.

[0174] According to one embodiment, an administrative compensation layer (530a) is disposed between an optical film layer (520) and an anti-fingerprint (AF) coating layer (530b), and the thicknesses of the administrative compensation layer (530a) and the anti-fingerprint coating layer (530b) may each be about 5 nm (nanometer) or more.

[0175] According to one embodiment, the administrative compensation layer (530a) may include at least one or more of SiO2, MgF2, CaF2, Na3AlF6, or SiON, or a combination thereof.

[0176] According to embodiments of the present disclosure, an external housing (600) of an electronic device (100) may include an optical film or laminated structure according to embodiments of the present disclosure.

[0177] According to embodiments of the present disclosure, an electronic device (100) may include an external housing (600) according to embodiments of the present disclosure. According to one embodiment, the electronic device may be a portable electronic device. In some embodiments, the portable electronic device may be a portable phone, a tablet PC, a laptop, an AR device, or the like.

[0178]

[0179] Electronic devices according to the embodiments disclosed in this document may take various forms. Electronic devices may include, for example, portable communication devices (e.g., smartphones), computer devices, portable multimedia devices, portable medical devices, cameras, wearable devices, or home appliances. Electronic devices according to the embodiments disclosed in this document are not limited to the aforementioned devices.

[0180] The embodiments of this document and the terminology used herein are not intended to limit the technical features described in this document to specific embodiments, but should be understood to include various modifications, equivalents, or substitutes of the embodiments. In connection with the description of the drawings, similar reference numerals may be used for similar or related components. The singular form of a noun corresponding to an item may include one or more of the items, unless the context clearly indicates otherwise. In this document, each of the phrases "A or B", "at least one of A and B", "at least one of A or B", "A, B, or C", "at least one of A, B, and C", and "at least one of A, B, or C" can include any one of the items listed together in the corresponding phrase among those phrases, or all possible combinations thereof. Terms such as "first," "second," or "first" or "second" may be used merely to distinguish one component from another, and do not limit the components in any other respect (e.g., importance or order). When a component (e.g., a first component) is referred to as "coupled" or "connected" to another component (e.g., a second component), with or without the terms "functionally" or "communicatively," it means that the component can be connected to the other component directly (e.g., wired), wirelessly, or through a third component.

[0181] The term "module" used in the embodiments of this document may include a unit implemented in hardware, software, or firmware, and may be used interchangeably with terms such as logic, logic block, component, or circuit. A module may be an integral component, or a minimum unit or part of such a component that performs one or more functions. For example, according to one embodiment, a module may be implemented in the form of an application-specific integrated circuit (ASIC).

[0182] Embodiments of the present document may be implemented as software (e.g., a program (140)) including one or more instructions stored in a storage medium (e.g., an internal memory (136) or an external memory (138)) readable by a machine (e.g., an electronic device (101)). For example, a processor (e.g., a processor (120)) of the machine (e.g., an electronic device (101)) may call at least one instruction among the one or more instructions stored from the storage medium and execute it. This enables the machine to operate to perform at least one function according to the at least one called instruction. The one or more instructions may include code generated by a compiler or code executable by an interpreter. The machine-readable storage medium may be provided in the form of a non-transitory storage medium. Here, 'non-transitory' simply means that the storage medium is a tangible device and does not contain signals (e.g., electromagnetic waves), and the term does not distinguish between cases where data is stored semi-permanently or temporarily on the storage medium.

[0183] According to one embodiment, the method according to the embodiments disclosed in the present document may be provided as a computer program product. The computer program product may be traded between sellers and buyers as a product. The computer program product may be distributed in the form of a device-readable storage medium (e.g., compact disc read-only memory (CD-ROM)) or may be available through an application store (e.g., Play Store). TM ) or directly between two user devices (e.g., smart phones), online distribution (e.g., downloading or uploading). In the case of online distribution, at least a portion of the computer program product may be at least temporarily stored or temporarily created in a machine-readable storage medium, such as the memory of a manufacturer's server, an application store's server, or an intermediary server.

[0184] According to embodiments, each component (e.g., a module or a program) of the above-described components may include one or more entities, and some of the entities may be separated and placed in other components. According to embodiments, one or more components or operations of the aforementioned components may be omitted, or one or more other components or operations may be added. Alternatively or additionally, a plurality of components (e.g., a module or a program) may be integrated into a single component. In such a case, the integrated component may perform one or more functions of each of the plurality of components identically or similarly to those performed by the corresponding component among the plurality of components prior to the integration. According to embodiments, operations performed by a module, program, or other component may be executed sequentially, in parallel, iteratively, or heuristically, or one or more of the operations may be executed in a different order, omitted, or one or more other operations may be added.

Claims

1. Two or more types of silicon-based thin films having a refractive index (n) exceeding 1.489; Including, An optical film wherein the two or more types of silicon-based thin films have different refractive indices.

2. In paragraph 1, The above two or more types of silicon-based thin films have different nitrogen contents, An optical film comprising a silicon-based thin film having a nitrogen content of less than 38% among the two or more types of silicon-based thin films described above.

3. In any one of paragraphs 1 and 2, An optical film wherein the two or more types of silicon-based thin films have a refractive index difference of 0.2 or more.

4. In any one of paragraphs 1 to 3, The above optical film, A first silicon-based thin film comprising a silicon-based compound having a nitrogen content of less than 38% and a refractive index greater than 1.489 and less than 1.967; and A second silicon-based thin film comprising a silicon-based compound having a nitrogen content 5% higher than that of the first silicon-based thin film and having a higher refractive index than that of the first silicon-based thin film; An optical film comprising:

5. In any one of paragraphs 1 to 4, A laminated unit in which silicon-based thin films are sequentially cross-laminated on at least a portion or all of the optical films, The above optical film, A laminated unit in which silicon-based thin films are laminated in order of decreasing refractive index. A laminated unit comprising silicon-based thin films laminated in order of increasing refractive index, or both, An optical film wherein the above laminated unit is repeated once or twice or more.

6. In any one of paragraphs 1 to 5, The above optical film is a silicon oxide thin film; Including more, An optical film, wherein the thickness of the silicon oxide thin film is less than 20% of the thickness of the optical film.

7. In any one of paragraphs 1 to 6, The above optical film, Reflectance greater than 10% in the reflectance spectrum from 400 nm (nanometer) to 700 nm (nanometer); A color tone with an a*b* value of 2 or more as measured by color difference values; Residual stress greater than 300 Mpa (Mega Pascal); or Surface hardness of 12 Gpa (Giga pascal) or more at an indentation depth of 200 nm (nanometer) or more; An optical film comprising at least one or a combination thereof.

8. Glass substrate; and comprising an optical film layer; The above optical film layer, Two or more silicon-based thin films having a refractive index (n) exceeding 1.489; Including, A laminated structure in which the two or more types of silicon-based thin films have different refractive indices.

9. In paragraph 8, The above two or more types of silicon-based thin films have different nitrogen contents, Among the above two or more types of silicon-based thin films, a silicon-based thin film having a nitrogen content of less than 38% is included. A laminated structure in which the two or more types of silicon-based thin films have a refractive index difference of 0.2 or more from each other.

10. In any one of paragraphs 8 to 9, The above optical film layer, A first silicon-based thin film comprising a silicon-based compound having a nitrogen content of less than 38% and a refractive index greater than 1.489 and less than 1.967; and A second silicon-based thin film comprising a silicon-based compound having a nitrogen content 5% higher than that of the first silicon-based thin film and having a higher refractive index than that of the first silicon-based thin film; A laminated structure comprising:

11. In any one of paragraphs 8 to 10, A laminated unit in which silicon-based thin films are sequentially cross-laminated on at least a portion or all of the optical film layers, The above optical film layer, A laminated unit in which silicon-based thin films are laminated in order of decreasing refractive index. A laminated unit comprising silicon-based thin films laminated in order of increasing refractive index, or both, A laminated structure wherein the above laminated units are repeated once or twice or more.

12. In any one of paragraphs 8 to 11, The above optical film layer is a silicon oxide thin film; Including more, A laminated structure, wherein the silicon oxide thin film comprises less than 20% of the thickness of the optical film layer.

13. In any one of paragraphs 8 to 12, The above optical film layer, Reflectance greater than 10% in the reflectance spectrum from 400 nm (nanometer) to 700 nm (nanometer); A color tone with an a*b* value of 2 or more as measured by color difference values; Residual stress greater than 300 Mpa (Mega Pascal); or A laminated structure comprising at least one or more of the following or a combination thereof: a surface hardness of 12 Gpa (Giga pascal) or more at an indentation depth of 200 nm (nanometer) or more; 14. In any one of paragraphs 8 to 13, A buffer layer between the optical film layer and the substrate; Including more, A laminated structure, wherein the buffer layer comprises at least one or more of a polymer, an oxide, a metal, an intermetallic compound or an alloy, or a combination thereof.

15. In any one of paragraphs 8 to 14, An anti-fingerprint (AF) coating layer on the optical film layer; an administrative compensation layer; or both of these. Including more, An administrative compensation layer is disposed between the optical film layer and the anti-fingerprint coating layer, The thickness of the above administrative compensation layer and the above anti-fingerprint coating layer are each 5 nm (nanometer) or more, The above administraton compensation layer is SiO 2 , MgF 2 , CaF 2 , Na 3 AlF 6 A laminated structure comprising at least one or more of SiON or a combination thereof.

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