Substrate treatment device and method

Abstract

The present invention relates to a substrate treatment device and method, and to a substrate treatment device and method for reducing the content of oxygen remaining in a lower layer of a thin film. The substrate treatment device according to an embodiment of the present invention comprises: a process chamber that provides a processing space for a process for a substrate on which an oxide film is formed; and a control unit for controlling the process for the substrate, wherein: the control unit allows a surface treatment process for the substrate to be performed before a thin film deposition process for depositing a thin film on the substrate is performed; and the surface treatment process includes a process of controlling the nitrogen concentration and the oxygen concentration in the upper region of the oxide film adjacent to the thin film.

Description

Substrate processing device and method

[0001] The present invention relates to a substrate processing device and method, and more particularly, to a substrate processing device and method for reducing the content of oxygen remaining in a lower layer of a thin film.

[0002] Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a source gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since a single layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] The process gas for depositing a thin film on a substrate may include a source gas and a reaction gas. A thin film may be deposited on the substrate by injecting the reaction gas after the source gas is injected onto the substrate.

[0005] An oxide film may be coated on the substrate to protect its surface prior to depositing a thin film on the substrate. The oxide film can prevent damage caused by impurities and provide insulation.

[0006] Meanwhile, when a thin film is deposited on a substrate coated with an oxide film, the content of oxygen remaining in the lower layer of the thin film may increase, which may deteriorate the quality of the thin film.

[0007] Therefore, there is a need for an invention that enables reducing the content of oxygen remaining in the lower layer of the thin film.

[0008] The problem to be solved by the present invention is to provide a substrate processing device and method that reduces the content of oxygen remaining in the lower layer of a thin film.

[0009] The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0010] A substrate treatment device according to an embodiment of the present invention includes a process chamber providing a process treatment space for a process on a substrate on which an oxide film is formed, and a control unit controlling a process on the substrate, wherein the control unit performs a surface treatment process on the substrate before a thin film deposition process for depositing a thin film on the substrate is performed, and the surface treatment process includes a process for controlling a nitrogen concentration and an oxygen concentration in an upper region of the oxide film adjacent to the thin film.

[0011] As one proceeds in the direction of the thin film from the lower part of the upper region of the oxide film, the nitrogen concentration increases and the oxygen concentration decreases.

[0012] The above thin film comprises a component of titanium nitride (TiN).

[0013] A substrate treatment method according to an embodiment of the present invention includes a step of performing a surface treatment process on a substrate on which an oxide film is formed, and a step of performing a thin film deposition process for depositing a thin film on the substrate, wherein the surface treatment process includes a step of controlling a nitrogen concentration and an oxygen concentration in an upper region of the oxide film adjacent to the thin film.

[0014] The surface treatment process includes a first surface treatment process in which a first surface treatment gas is sprayed onto the substrate, a second surface treatment process in which a second surface treatment gas is sprayed onto the substrate, and a third surface treatment process in which a third surface treatment gas is sprayed onto the substrate.

[0015] The first surface treatment gas includes a first gas and a second gas, the second surface treatment gas includes the second gas and a third gas, and the third surface treatment gas includes the second gas.

[0016] The first gas includes ammonia (NH3), the second gas includes nitrogen (N2), and the third gas includes argon (Ar).

[0017] The flow rate of the second gas used in the third surface treatment process is formed to be greater than the flow rates of the second gas used in each of the first surface treatment process and the second surface treatment process.

[0018] The first surface treatment process includes a process in which the first surface treatment gas is converted into a plasma state by a first RF power, the second surface treatment process includes a process in which the second surface treatment gas is converted into a plasma state by a second RF power, and the third surface treatment process includes a process in which the third surface treatment gas is converted into a plasma state by a third RF power, and among the first to third RF powers, the third RF power is the largest and the first RF power is the smallest.

[0019] The first surface treatment process is performed for a first time, the second surface treatment process is performed for a second time, the third surface treatment process is performed for a third time, and the first to third times are the same.

[0020] Specific details of other embodiments are included in the detailed description and drawings.

[0021] According to the substrate processing device according to the embodiment of the present invention as described above, there is an advantage in that the content of oxygen remaining in the lower layer of the thin film is reduced by spraying a substance for suppressing the reaction of oxygen on the oxide film coated on the substrate.

[0022] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

[0023] Figure 2 is a drawing showing that the substrate support has moved into the process processing space.

[0024] Figure 3 is a drawing showing a thin film being deposited on a substrate on which a surface treatment process has not been performed.

[0025] FIG. 4 is a drawing showing a thin film being deposited on a substrate on which a surface treatment process has been performed according to an embodiment of the present invention.

[0026] Figure 5 is a drawing for explaining the process cycle.

[0027] Figure 6 is a drawing for explaining a surface treatment process according to the first experimental example of the present invention.

[0028] Figure 7 is a drawing for explaining a surface treatment process according to the second experimental example of the present invention.

[0029] Figure 8 is a drawing for explaining the bonding relationship between a surface-treated oxide film and a thin film.

[0030] Figure 9 is a table showing process conditions of a surface treatment process according to the first embodiment of the present invention.

[0031] Figure 10 is a table showing process conditions of a surface treatment process according to the second embodiment of the present invention.

[0032] Figure 11 is a graph for explaining the concentration distribution of oxygen contained in a thin film when the thin film is deposited on a substrate by a conventional method.

[0033] FIG. 12 is a graph for explaining the concentration distribution of oxygen contained in a thin film when the thin film is deposited on a substrate by a method according to an embodiment of the present invention.

[0034] Figure 13 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0035] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0036] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0037] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support part moved into a process processing space.

[0038] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevation unit (300), a gas supply unit (400), a gas injection unit (500), a power supply unit (600), and a control unit (700).

[0039] The substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). Specifically, the substrate processing device (10) can deposit a thin film on the substrate (W) using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD). Alternatively, the substrate processing device (10) can deposit a thin film on the substrate (W) using chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0040] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) may provide a space for accommodating various components for processing a substrate (W). The chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a gas injection unit (500). The gas injection unit (500) may be fixed to the lower surface of the chamber lid (120).

[0041] The process chamber (100) can provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for a process on a substrate (W) on which an oxide film is formed, and the substrate placement space (SP2) represents a space for placement and movement of the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) can be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), an upper space may correspond to the process processing space (SP1), and a lower space may correspond to the substrate placement space (SP2).

[0042] A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, the substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be introduced into or taken out of the process chamber (100) through the substrate entrance (130).

[0043] The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be loaded or unloaded through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the exterior.

[0044] The substrate support (200) can provide a mounting surface on which a substrate (W) can be mounted. A process can be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) can heat the substrate (W). To this end, a heater (not shown) can be provided inside the substrate support (200). Heat emitted from the heater can be transferred to the substrate (W) through the body of the substrate support (200). The heater can serve as an electrode for forming an electric field. As described below, when RF power is supplied to the showerhead (520), an electric field can be formed between the showerhead (520) and the heater.

[0045] The substrate support (200) can be raised to a process processing space (SP1) where a process for the substrate (W) is performed, or lowered to a substrate placement space (SP2) where placement and movement of the substrate (W) are performed. The elevating unit (300) can generate a driving force to move the substrate support (200) in the up and down direction. Fig. 1 illustrates the substrate support (200) being lowered to the substrate placement space (SP2), and Fig. 2 illustrates the substrate support (200) being raised to the process processing space (SP1).

[0046] The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the gas injection unit (500) provided in the process chamber (100). A gas transfer line (410) can be connected to the gas supply unit (400). A plurality of gas transfer lines (410) can be provided, and the plurality of gas transfer lines (410) can provide transfer paths for different process gases.

[0047] The gas injection unit (500) serves to inject process gas into the process chamber (100). The gas injection unit (500) is configured to include a diffusion unit (510) and a showerhead (520). The diffusion unit (510) serves to provide a diffusion space (530) for the process gas supplied to the process chamber (100). By combining the diffusion unit (510) and the showerhead (520), a diffusion space (530) can be formed between the diffusion unit (510) and the showerhead (520). In addition, the diffusion unit (510) can diffuse the process gas supplied from the gas supply unit (400) and supply it to the diffusion space (530). For example, the diffusion unit (510) can supply the process gas to a plurality of different points in the diffusion space (530).

[0048] The showerhead (520) is coupled to the diffusion unit (510) and serves to inject the process gas diffused in the diffusion space (530). The showerhead (520) can inject the process gas with a uniform distribution over the entire surface area of ​​the substrate (W). In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be sequentially injected from the showerhead (520), or at least some of them may be injected simultaneously. The source gas and the reaction gas may collide with each other and react after being injected from the showerhead (520). Then, the source gas activated by the reaction gas may contact the substrate (W) to perform a process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W).

[0049] The showerhead (520) may be provided with a plurality of injection holes (540) for injection of process gas. The plurality of injection holes (540) may be distributed over a certain range of the showerhead (520).

[0050] The power supply unit (600) can supply RF power for generating plasma to the process chamber (100). Specifically, the power supply unit (600) can supply RF power to the showerhead (520). The showerhead (520) may have a separate electrode plate (not shown) that receives RF power, or may serve as an electrode that receives RF power on its own. As described above, the substrate support unit (200) may include a heater that serves as an electrode. When RF power is supplied to the showerhead (520), an electric field may be formed between the showerhead (520) and the heater of the substrate support unit (200). The electric field formed by the supply of RF power converts the process gas introduced into the process chamber (100) into particles in a plasma state, and the plasma particles react with the surface of the substrate (W) so that a process treatment can be performed on the substrate (W).

[0051] The process chamber (100) may be equipped with an exhaust port (150). The exhaust port (150) may be disposed on the inner lower surface of the chamber body (110). For example, the exhaust port (150) may be disposed in an area vertically overlapping the substrate support (200) to effectively discharge process byproducts. Meanwhile, the exhaust port (150) being disposed on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the exhaust port (150) may be disposed on the inner side surface of the chamber body (110). For example, when the substrate support (200) is raised to the process processing space (SP1), the exhaust port (150) may be disposed in an area between the substrate support (200) and the gas injection unit (500). Hereinafter, the case where the exhaust port (150) is disposed on the inner lower surface of the chamber body (110) will be mainly described.

[0052] The exhaust port (150) may provide an exhaust path for process byproducts. Here, the process byproducts may include all substances that must be exhausted from the process chamber (100), such as remaining gases from the process gas supplied to the process chamber (100) that are not used for forming a thin film. For example, the process byproducts may include source gas, reaction gas, source purge gas, and reaction purge gas.

[0053] An exhaust line (160) may be connected to the exhaust port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the exhaust port (150). An exhaust pump (170) may be provided in the exhaust line (160). The exhaust pump (170) may pressurize the internal space of the exhaust line (160) so that process byproducts introduced into the exhaust port (150) may be transported through the exhaust line (160). Process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

[0054] The control unit (700) can perform overall control of the substrate processing device (10). For example, the control unit (700) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (700) can control the supply of RF power by the power supply unit (600) or the supply of process gas to the process chamber (100).

[0055] In addition, the control unit (700) can control a process for the substrate (W). Specifically, the control unit (700) can cause a surface treatment process for the substrate (W) to be performed before a thin film deposition process for depositing a thin film on the substrate (W) is performed. In the present invention, the surface treatment process can include a process for controlling the nitrogen concentration and oxygen concentration in the upper region of the oxide film adjacent to the thin film.

[0056] Hereinafter, the surface treatment process will be described with reference to FIGS. 3 and 4.

[0057] FIG. 3 is a drawing showing a thin film being deposited on a substrate on which a surface treatment process has not been performed, and FIG. 4 is a drawing showing a thin film being deposited on a substrate on which a surface treatment process has been performed according to an embodiment of the present invention.

[0058] Referring to FIG. 3, a thin film (900) can be deposited on a substrate (W) on which a surface treatment process has not been performed.

[0059] The substrate (W) may have an oxide film (800) formed on its surface. The oxide film (800) may serve to protect the surface of the substrate (W). For example, the oxide film (800) may be composed of a component of silicon dioxide (SiO2).

[0060] A thin film (900) can be deposited on a substrate (W) on which an oxide film (800) is formed. That is, when an oxide film (800) is formed on the substrate (W), a source gas and a reaction gas are injected into the process chamber (100), and a thin film (900) can be formed by a reaction between the source gas and the reaction gas applied to the substrate (W).

[0061] In the present invention, the thin film (900) may be composed of a titanium nitride (TiN) component. To form the titanium nitride thin film (900), titanium chloride (TiCl4) may be used as a source gas, and ammonia (NH3) may be used as a reaction gas.

[0062] When the thin film (900) deposited on the substrate (W) is a titanium nitride thin film (900), nitrogen, which is a process material included in the thin film (900), and oxygen included in the oxide film (800) can combine. When nitrogen and oxygen combine, an oxygen layer (901) with a high oxygen concentration can be formed in the thin film (900), and the oxygen included in the oxygen layer (901) can act as an impurity.

[0063] In this way, in order to prevent oxygen from being included in the thin film (900), the control unit (700) can cause the surface treatment process to be performed before the thin film deposition process is performed.

[0064] Referring to FIG. 4, a thin film (900) can be deposited on a substrate (W) on which a surface treatment process has been performed.

[0065] The upper region (810) of the oxide film (800) formed on the substrate (W) through the surface treatment process may have a relatively high nitrogen concentration. To explain this in detail, as the surface treatment process is performed, the nitrogen concentration may increase and the oxygen concentration may decrease as one proceeds in the direction of the thin film (900) from the lower portion of the upper region (810) of the oxide film (800) facing the thin film (900). Accordingly, when the thin film (900) is formed on the oxide film (800), the inclusion of oxygen in the interior of the thin film (900) may be prevented or minimized.

[0066] Figure 5 is a drawing for explaining the process cycle.

[0067] Referring to FIG. 5, a plurality of processes can be sequentially performed to deposit a thin film (900) on a substrate (W).

[0068] A surface treatment process may be performed prior to deposition of a thin film (900) on a substrate (W). A surface treatment gas may be injected into a process chamber (100) for the surface treatment process. The surface treatment gas may contain nitrogen.

[0069] As the surface treatment gas is injected into the process chamber (100), RF power can be supplied to the process chamber (100) by the power supply unit (600). By supplying the RF power, the surface treatment gas can be converted into a plasma state. An upper region (810) of an oxide film (800) can be formed by the surface treatment gas in a plasma state.

[0070] The control unit (700) can gradually increase the amount of RF power while the surface treatment process is being performed. FIG. 5 illustrates that the surface treatment process is performed in three stages, and that the amount of RF power increases as the stage is switched. If an excessively large amount of RF power is supplied at the beginning of the surface treatment process, the substrate (W) may be damaged. In the beginning of the surface treatment process, a relatively small amount of RF power is supplied to the process chamber (100), and then the RF power is gradually increased, so that the surface treatment process can proceed while preventing damage to the substrate (W).

[0071] After the surface treatment process is performed, a thin film deposition process may be performed. A source gas may be injected into the process chamber (100) to deposit a thin film (900) on the substrate (W). A source purge gas may be continuously supplied to pressurize the source gas while the process on the substrate (W) is in progress. The source gas may be sprayed onto the surface of the substrate (W) through a showerhead (520). Some of the source gas sprayed onto the substrate (W) may be adsorbed onto the surface of the substrate (W), and some may not be adsorbed. The non-adsorbed source gas may be deposited on the adsorbed source gas or may float inside the process chamber (100).

[0072] After the source gas is sprayed onto the substrate (W), the source gas may be purged from the process chamber (100). The step of purging the source gas from the process chamber (100) may include a step of discharging the source gas that is not adsorbed on the surface of the substrate (W) from the process chamber (100). That is, when the source gas is purged from the process chamber (100), only the source gas adsorbed on the substrate (W) remains, and the source gas that is deposited on the adsorbed source gas or floats in the process chamber (100) may be discharged to the outside of the process chamber (100). Accordingly, a single source gas layer may be formed on the surface of the substrate (W).

[0073] After the source gas is purged, a reaction gas may be injected into the process chamber (100). The reaction purge gas may be continuously supplied while the process for the substrate (W) is in progress to pressurize the reaction gas. The reaction gas may be sprayed onto the surface of the substrate (W) through a showerhead (520). The reaction gas may react with the source gas adsorbed on the substrate (W) to form a thin film (900). Although not shown, in order to improve the reactivity between the reaction gas and the source gas, when the reaction gas is injected into the process chamber (100), RF power may be applied to the process chamber (100) to convert the reaction gas into a plasma state. The source gas may also be converted into a plasma state by the RF power.

[0074] A source gas and a reaction gas in a plasma state can react to form a thin film (900) with high reaction efficiency.

[0075] After RF power is applied, the reaction gas can be purged from the process chamber (100). That is, RF power is applied for a certain period of time to convert the reaction gas into plasma, and when the period of time has elapsed, the supply of RF power is stopped, and then the reaction gas can be purged.

[0076] The step of purging the reaction gas from the process chamber (100) includes a step of discharging process byproducts such as reaction gas and plasma that are not used to form a thin film (900) on the surface of the substrate (W) from the process chamber (100).

[0077] The process of supplying a source gas and a reaction gas to a process chamber (100) to form a thin film (900) forms one process cycle, and multiple layers of thin films (900) can be deposited on a substrate (W) through multiple process cycles.

[0078] Since the thin film deposition process is performed after the surface treatment process, the thin film (900) deposited on the substrate (W) may not contain oxygen impurities.

[0079] Figure 6 is a drawing for explaining a surface treatment process according to the first embodiment of the present invention.

[0080] Referring to FIG. 6, the surface treatment process may include a first surface treatment process, a second surface treatment process, and a third surface treatment process.

[0081] The first surface treatment process, the second surface treatment process, and the third surface treatment process are performed sequentially, and a surface treatment gas can be sprayed onto the substrate (W) through each process.

[0082] The first surface treatment process may include a process in which a first surface treatment gas is sprayed onto the substrate (W), the second surface treatment process may include a process in which a second surface treatment gas is sprayed onto the substrate (W), and the third surface treatment process may include a process in which a third surface treatment gas is sprayed onto the substrate (W).

[0083] The first surface treatment gas may be a mixed gas. To be more specific, the first surface treatment gas may be a mixed gas comprising a first gas and a second gas. At least one of the first gas and the second gas may comprise nitrogen (N). For example, the first gas may comprise ammonia (NH3), and the second gas may comprise nitrogen (N2).

[0084] The flow rates (sccm) of the first gas and the second gas included in the first surface treatment gas may differ from each other. To elaborate, when the first surface treatment process is performed, the flow rate of the first gas may be formed to be greater than the flow rate of the second gas.

[0085] The second surface treatment gas may be a mixed gas. To be more specific, the second surface treatment gas may be a mixed gas comprising a second gas and a third gas. The third gas may comprise argon (Ar).

[0086] The flow rates (sccm) of the second gas and the third gas included in the second surface treatment gas may differ from each other. To elaborate, when the second surface treatment process is performed, the flow rate of the second gas may be formed to be greater than the flow rate of the third gas.

[0087] The third surface treatment gas may be a single gas. To elaborate, the third surface treatment gas may be a single gas that includes the second gas.

[0088] The flow rate of the second gas used in the third surface treatment process may be different from the flow rates of the second gas used in the first and second surface treatment processes, respectively. To explain this in detail, the flow rate of the second gas used in the third surface treatment process may be formed to be greater than the flow rates of the second gas used in the first and second surface treatment processes, respectively.

[0089] When the third surface treatment process is performed, a large amount of nitrogen (N) is used compared to the first and second surface treatment processes, so that the nitrogen concentration in the upper region (810) of the oxide film (800) can be maximized and the oxygen concentration can be minimized. To explain this in detail, in the upper region (810) of the oxide film (800), as one proceeds from the substrate (W) toward the thin film (900), the nitrogen concentration increases and the oxygen concentration decreases, so that the inclusion of oxygen in the interior of the thin film (900) formed on the oxide film (800) can be prevented or minimized.

[0090] Additionally, the first surface treatment process may include a process of converting a first surface treatment gas into a plasma state, the second surface treatment process may include a process of converting a second surface treatment gas into a plasma state, and the third surface treatment process may include a process of converting a third surface treatment gas into a plasma state.

[0091] To explain this in detail, the first surface treatment process may include a process in which first RF power is supplied and a first surface treatment gas provided to the substrate (W) is converted into a plasma state, the second surface treatment process may include a process in which second RF power is supplied and a second surface treatment gas provided to the substrate (W) is converted into a plasma state, and the third surface treatment process may include a process in which third RF power is supplied and a third surface treatment gas provided to the substrate (W) is converted into a plasma state.

[0092] The control unit (700) can cause the second RF power to be formed to be greater than the first RF power, and the third RF power to be formed to be greater than the second RF power. That is, the control unit (700) can gradually increase the magnitude of the RF power as the surface treatment process progresses. As the magnitude of the RF power increases as the surface treatment process progresses, damage to the substrate (W) can be prevented, and the oxygen concentration within the thin film (800) can be effectively controlled.

[0093] That is, when the third surface treatment process is performed, higher RF power is used compared to the first surface treatment process and the second surface treatment process, so the nitrogen concentration in the upper region (810) of the oxide film (800) can be maximized and the oxygen concentration can be minimized.

[0094] To explain this in detail, since a relatively low first RF power is used when the first surface treatment process is performed, plasma damage occurring on the substrate (W) can be minimized. In addition, since the RF power is increased to the second RF power and the third RF power when the second surface treatment process and the third surface treatment process are performed, the nitrogen concentration can increase and the oxygen concentration can decrease as the process progresses from the substrate (W) toward the thin film (900) in the upper region (810) of the oxide film (800). Accordingly, the inclusion of oxygen in the interior of the thin film (900) formed on the oxide film (800) can be prevented or minimized.

[0095] The first surface treatment process, the second surface treatment process, and the third surface treatment process may be performed for a preset time period. The first surface treatment process may be performed for a first time period, the second surface treatment process may be performed for a second time period, and the third surface treatment process may be performed for a third time period. Here, the first to third times period may be the same. Alternatively, the first time period, the second time period, and the third time period may be different. For example, in order to increase the nitrogen concentration and minimize the oxygen concentration closer to the thin film (800), the third time period may be the longest among the first to third times period, and the first time period may be the shortest.

[0096] Figure 7 is a drawing for explaining a surface treatment process according to a second embodiment of the present invention.

[0097] Referring to FIG. 7, the surface treatment process may include multiple processes. For example, the surface treatment process may include a first surface treatment process, a second surface treatment process, and a third surface treatment process.

[0098] The first surface treatment process, the second surface treatment process, and the third surface treatment process are performed sequentially, and a surface treatment gas can be sprayed onto the substrate (W) through each process.

[0099] The first surface treatment process may include a process in which a first surface treatment gas is sprayed onto the substrate (W), the second surface treatment process may include a process in which a second surface treatment gas is sprayed onto the substrate (W), and the third surface treatment process may include a process in which a third surface treatment gas is sprayed onto the substrate (W).

[0100] The first surface treatment gas used in the first surface treatment process may include a fourth gas and a fifth gas. At least one of the fourth gas and the fifth gas may include nitrogen (N). For example, the fourth gas may include nitrogen (N2), and the fifth gas may include hydrogen (H2).

[0101] The first surface treatment process may include a first surface treatment process and a second surface treatment process. The first surface treatment process may be performed after the first surface treatment process. The first surface treatment process may be a process in which a fourth gas is sprayed onto the substrate (W), and the first surface treatment process may be a process in which a fifth gas is sprayed onto the substrate (W).

[0102] When the 1-1 surface treatment process and the 1-2 surface treatment process are performed, the flow rates (sccm) of the fourth gas and the fifth gas may differ from each other. To explain this in detail, the flow rate of the fourth gas may be formed to be greater than the flow rate of the fifth gas.

[0103] The second surface treatment gas used in the second surface treatment process may include a fourth gas and a fifth gas.

[0104] The second surface treatment process may include a second surface treatment process and a second surface treatment process. The second surface treatment process may be performed after the second surface treatment process is performed. The second surface treatment process may be a process in which a fourth gas is sprayed onto the substrate (W), and the second surface treatment process may be a process in which a fifth gas is sprayed onto the substrate (W).

[0105] When the 2-1 surface treatment process and the 2-2 surface treatment process are performed, the flow rates (sccm) of the fourth gas and the fifth gas may be different from each other. To explain this in detail, the flow rate of the fourth gas may be formed to be greater than the flow rate of the fifth gas. In addition, considering the nitrogen concentration of the oxide film (800) adjacent to the thin film (900), the flow rate of the fourth gas used in the 2-1 surface treatment process may be greater than the flow rate of the fourth gas used in the 1-1 surface treatment process.

[0106] The third surface treatment gas used in the third surface treatment process may include a fourth gas and a fifth gas.

[0107] The third surface treatment process may include the third-first surface treatment process and the third-second surface treatment process. The third-second surface treatment process may be performed after the third-first surface treatment process. The third-first surface treatment process may be a process in which a fourth gas is sprayed onto the substrate (W), and the third-second surface treatment process may be a process in which a fifth gas is sprayed onto the substrate (W).

[0108] When the 3-1 surface treatment process and the 3-2 surface treatment process are performed, the flow rates (sccm) of the fourth gas and the fifth gas may be different from each other. To explain this in detail, the flow rate of the fourth gas may be formed to be greater than the flow rate of the fifth gas. In addition, considering the nitrogen concentration of the oxide film (800) adjacent to the thin film (900), the flow rate of the fourth gas used in the 3-1 surface treatment process may be greater than the flow rate of the fourth gas used in the 2-1 surface treatment process.

[0109] When the third surface treatment process is performed, a large amount of nitrogen (N) is used compared to the first and second surface treatment processes, so that the nitrogen concentration in the upper region (810) of the oxide film (800) can be maximized and the oxygen concentration can be minimized. To explain this in detail, in the upper region (810) of the oxide film (800), as one proceeds from the substrate (W) toward the thin film (900), the nitrogen concentration increases and the oxygen concentration decreases, so that the inclusion of oxygen in the interior of the thin film (900) formed on the oxide film (800) can be prevented or minimized.

[0110] Additionally, the first surface treatment process may include a process of converting a first surface treatment gas into a plasma state, the second surface treatment process may include a process of converting a second surface treatment gas into a plasma state, and the third surface treatment process may include a process of converting a third surface treatment gas into a plasma state.

[0111] To explain this in detail, the 1-1 surface treatment process and the 1-2 surface treatment process may include a process in which a first RF power is supplied and a first surface treatment gas provided to the substrate (W) is converted into a plasma state, the 2-1 surface treatment process and the 2-2 surface treatment process may include a process in which a second RF power is supplied and a second surface treatment gas provided to the substrate (W) is converted into a plasma state, and the 3-1 surface treatment process and the 3-2 surface treatment process may include a process in which a third RF power is supplied and a third surface treatment gas provided to the substrate (W) is converted into a plasma state.

[0112] The control unit (700) can cause the second RF power to be formed to be greater than the first RF power, and the third RF power to be formed to be greater than the second RF power. That is, the control unit (700) can gradually increase the magnitude of the RF power as the surface treatment process progresses. As the magnitude of the RF power increases as the surface treatment process progresses, damage to the substrate (W) can be prevented, and the oxygen concentration within the thin film (800) can be effectively controlled.

[0113] That is, when the third surface treatment process is performed, higher RF power is used compared to the first surface treatment process and the second surface treatment process, so the nitrogen concentration in the upper region (810) of the oxide film (800) can be maximized and the oxygen concentration can be minimized.

[0114] To explain this in detail, since a relatively low first RF power is used when the first surface treatment process is performed, plasma damage occurring on the substrate (W) can be minimized. In addition, since the RF power is increased to the second RF power and the third RF power when the second surface treatment process and the third surface treatment process are performed, the nitrogen concentration can increase and the oxygen concentration can decrease as the process progresses from the substrate (W) toward the thin film (900) in the upper region (810) of the oxide film (800). Accordingly, the inclusion of oxygen in the interior of the thin film (900) formed on the oxide film (800) can be prevented or minimized.

[0115] The first surface treatment process, the second surface treatment process, and the third surface treatment process can be performed for a preset time.

[0116] The first surface treatment process may be performed for a first time period. To be more specific, the 1-1 surface treatment process may be performed for a first time period, and the 1-2 surface treatment process may be performed for a first time period. Here, the first time period and the first time period may be the same, and the sum of the first time period and the first time period may be the first time period.

[0117] The second surface treatment process may be performed for a second period of time. To elaborate, the second-first surface treatment process may be performed for a second period of time, and the second-second surface treatment process may be performed for a second period of time. Here, the second-first period and the second-second period may be the same, and the sum of the second-first period and the second-second period may be the second period of time.

[0118] The third surface treatment process may be performed for a third time period. To elaborate, the third-first surface treatment process may be performed for a third time period, and the third-second surface treatment process may be performed for a third time period. Here, the third-first time period and the third-second time period may be the same, and the sum of the third-first time period and the third-second time period may be the third time period.

[0119] The first, second, and third times may be the same. Alternatively, the first, second, and third times may be different. For example, the third time may be the longest and the first time the shortest among the first to third times, so that the nitrogen concentration increases closer to the thin film (800) and the oxygen concentration is minimized.

[0120] Figure 8 is a drawing for explaining the bonding relationship between a surface-treated oxide film and a thin film.

[0121] Referring to FIG. 8, the thin film (900) can be bonded to the surface-treated oxide film (800).

[0122] In the present invention, the substrate (W) may be composed of a silicon (Si) component. The silicon of the substrate (W) may be bonded to the oxygen of the oxide film (800).

[0123] As the surface treatment process is performed, the nitrogen concentration in the upper region (810) of the oxide film (800) adjacent to the thin film (900) may gradually increase, and the oxygen concentration may decrease. The process material used for depositing the thin film (900) may include nitrogen and titanium. In particular, the upper surface of the oxide film (800) in contact with the thin film (900) among the upper region (810) of the oxide film (800) due to the surface treatment process described above may have a relatively high nitrogen concentration and a very low oxygen concentration. As a result, oxygen impurities due to the oxide film (800) may not be included in the interior of the thin film (900) formed on the oxide film (800) or may be minimized.

[0124] Fig. 9 is a table showing process conditions of a surface treatment process according to a first experimental example of the present invention, and Fig. 10 is a table showing process conditions of a surface treatment process according to a second experimental example of the present invention.

[0125] Referring to FIG. 9, the process condition table (1100) according to the first experimental example of the present invention specifies the process temperature, the type of surface treatment gas, the flow rate of the surface treatment gas, the magnitude of RF power, and the supply time of RF power.

[0126] The surface treatment process includes a first surface treatment process, a second surface treatment process, and a third surface treatment process. In the first surface treatment process, ammonia and nitrogen are sprayed onto the substrate (W), in the second surface treatment process, nitrogen and argon are sprayed onto the substrate (W), and in the third surface treatment process, nitrogen is sprayed onto the substrate (W).

[0127] The size of the RF power gradually increases as the process progresses from the first surface treatment process to the third surface treatment process, and the supply time of the RF power is formed to be the same in all processes.

[0128] Referring to FIG. 10, the process condition table (1200) according to the second experimental example of the present invention specifies the process temperature, the type of surface treatment gas, the flow rate of the surface treatment gas, the magnitude of RF power, and the supply time of RF power.

[0129] The surface treatment process involves multiple sub-processes. In each sub-process, nitrogen and hydrogen are alternately sprayed onto the substrate (W). As the alternating nitrogen and hydrogen are repeated, the RF power gradually increases, and the RF power supply time remains constant across all processes.

[0130] Although not shown, 30 to 100 sccm of titanium chloride (TiCl4) is used as a source gas in the first and second experimental examples.

[0131] FIG. 11 is a graph for explaining the concentration distribution of oxygen contained in a thin film when the thin film is deposited on a substrate by a conventional method, and FIG. 12 is a graph for explaining the concentration distribution of oxygen contained in a thin film when the thin film is deposited on a substrate by a method according to an embodiment of the present invention.

[0132] To explain this in detail, FIGS. 11 and 12 are data according to X-ray photoelectron spectroscopy (XPS) that indicate the types of elements and the concentrations of atoms included in a thin film (900), where the horizontal axis represents the etching time of the thin film (900), and the vertical axis represents the concentration of atoms. Here, the etching time of the thin film (900) can be understood as corresponding to the depth of the thin film (900). For example, 0 seconds (0s) means information about the surface of the thin film (900), and a specific etching time means information about the types of elements and the concentrations of atoms at the corresponding time depth according to the etching rate.

[0133] Referring to FIG. 11, when a thin film (900) is deposited on a substrate (W) on which a surface treatment process has not been performed, the thin film (900) may contain oxygen impurities. Referring to a graph (1310) showing the concentration of oxygen, the thin film (900) may contain 5% or more of oxygen impurities. If the thin film (900) contains oxygen impurities, the quality of the thin film (900) may deteriorate.

[0134] Referring to FIG. 12, when a thin film (900) is deposited on a substrate (W) on which a surface treatment process has been performed, the thin film (900) may contain no or little oxygen impurities. In particular, referring to a graph (1320) showing the concentration of oxygen, a specific region of the thin film (900) may not contain any oxygen impurities at all. As the thin film (900) does not contain any oxygen impurities, the quality of the thin film (900) may be improved.

[0135] Figure 13 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0136] Referring to FIG. 13, a substrate treatment method according to an embodiment of the present invention may include a step (S1410) in which a first surface treatment process is performed on a substrate (W), a step (S1420) in which a second surface treatment process is performed, a step (S1430) in which a third surface treatment process is performed, and a step (S1440) in which a thin film deposition process is performed on a substrate (W) on which a surface treatment process has been completed.

[0137] Here, the first surface treatment process, the second surface treatment process, and the third surface treatment process may include a process for controlling the nitrogen concentration and oxygen concentration in the upper region (810) of the oxide film (800) adjacent to the thin film (900). Since the first surface treatment process, the second surface treatment process, and the third surface treatment process have been described above, a detailed description thereof will be omitted.

[0138] In the present invention, the thin film (900) may be composed of a titanium nitride (TiN) component. In addition, the oxygen present on the surface of the substrate (W) may be included in the oxide film (800) formed on the surface of the substrate (W).

[0139] The upper surface of the oxide film (800) in contact with the thin film (900) among the upper region (810) of the oxide film (800) through the first surface treatment process, the second surface treatment process, and the third surface treatment process may have a relatively high nitrogen concentration and a very low oxygen concentration. As a result, oxygen impurities due to the oxide film (800) may not be included or may be minimized within the thin film (900) formed on the oxide film (800).

[0140] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A process chamber providing a process treatment space for a process on a substrate on which an oxide film has been formed; and Including a control unit that controls a process for the above substrate, The above control unit causes a surface treatment process to be performed on the substrate before a thin film deposition process for depositing a thin film on the substrate is performed, A substrate processing device, wherein the surface treatment process includes a process for controlling nitrogen concentration and oxygen concentration in an upper region of the oxide film adjacent to the thin film.

2. In paragraph 1, A substrate processing device in which the nitrogen concentration increases and the oxygen concentration decreases as one proceeds in the direction of the thin film from the lower portion of the upper region of the oxide film.

3. In paragraph 1, A substrate processing device comprising the above thin film composed of a component of titanium nitride (TiN).

4. A step in which a surface treatment process is performed on a substrate on which an oxide film has been formed; and Including a step of performing a thin film deposition process for depositing a thin film on the above substrate, A substrate treatment method, wherein the surface treatment process includes a process for controlling nitrogen concentration and oxygen concentration in an upper region of the oxide film adjacent to the thin film.

5. In paragraph 4, The above surface treatment process is, A first surface treatment process in which a first surface treatment gas is sprayed onto the substrate; A second surface treatment process in which a second surface treatment gas is sprayed onto the substrate; and A substrate treatment method comprising a third surface treatment process in which a third surface treatment gas is sprayed onto the substrate.

6. In paragraph 5, The first surface treatment gas includes a first gas and a second gas, The second surface treatment gas includes the second gas and the third gas, A substrate processing method wherein the third surface treatment gas includes the second gas.

7. In paragraph 6, A substrate processing method wherein the first gas comprises ammonia (NH3), the second gas comprises nitrogen (N2), and the third gas comprises argon (Ar).

8. In paragraph 5, A substrate processing method in which the flow rate of the second gas used in the third surface treatment process is formed to be greater than the flow rate of the second gas used in each of the first surface treatment process and the second surface treatment process.

9. In paragraph 5, The first surface treatment process includes a process in which the first surface treatment gas is converted into a plasma state by a first RF power, The second surface treatment process includes a process in which the second surface treatment gas is converted into a plasma state by a second RF power, The third surface treatment process includes a process in which the third surface treatment gas is converted into a plasma state by a third RF power, A substrate processing method wherein among the first to third RF powers, the third RF power is the greatest and the first RF power is the smallest.

10. In paragraph 5, The above first surface treatment process is performed for a first time, The above second surface treatment process is performed for a second time, The above third surface treatment process is carried out for a third time, The first to third times are the same substrate processing method.

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