Substrate processing method, bonding device, and bonding system
The substrate processing method uses a die-equipped carrier with a resin film to uniformly bond multiple dies to a substrate, addressing the challenge of varying bonding times and qualities by adjusting the mounting position of each die.
Patent Information
- Application Number
- PCT/JP2024/030683
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-09-11
- Filing Date
- 2024-08-28
- Publication Date
- 2025-03-20
AI Technical Summary
Existing substrate processing methods face challenges in uniformly joining multiple dies to a substrate, leading to variations in bonding time and quality.
A substrate processing method involving a die-equipped carrier with a resin film, where the dies are mounted on the carrier via a resin film, allowing for uniform bonding of the dies to the substrate by adjusting the mounting position of each die.
This method ensures uniform bonding time for each die, reducing variations in bonding quality and improving the accuracy of the joining process.
Smart Images

Figure JP2024030683_20032025_PF_FP_ABST
Abstract
Description
Substrate processing method, bonding apparatus, and bonding system
[0001] The present disclosure relates to a substrate processing method, a bonding apparatus, and a bonding system.
[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a carry-in / out unit, and a transport unit (paragraph
[0225] of Patent Document 1). The chip supply device supplies multiple chips individually. The chips are attached to tape covering an opening of a frame, and are pushed up one by one and turned upside down (paragraph
[0251] of Patent Document 1). The bonding device attaches the chips supplied from the chip supply device to a substrate.
[0003] Japanese Patent No. 6337400
[0004] One aspect of the present disclosure provides a technique for equalizing the time it takes to bond each of a plurality of dies.
[0005] A substrate processing method according to one aspect of the present disclosure includes: preparing a substrate having a first base substrate and a plurality of first devices formed on the first base substrate; preparing a die-attached carrier having a carrier substrate, a carrier having a resin film formed on the carrier substrate, and a plurality of dies attached to the carrier substrate via the resin film; and bonding the substrate and the die-attached carrier together to bond the plurality of dies to the substrate. Each of the plurality of dies has a second base substrate and a second device formed on the second base substrate. The plurality of first devices and the plurality of second devices are electrically connected together.
[0006] According to one aspect of the present disclosure, the time required for bonding each of a plurality of dies can be made uniform.
[0007] FIG. 1 is a plan view showing a transfer system according to an embodiment. FIG. 2 is a cross-sectional view showing an example of a die attached to a tape covering an opening of a frame. FIG. 3 is a cross-sectional view showing an example of a carrier. FIG. 4 is a cross-sectional view showing an example of a die attached to a carrier. FIG. 5 is a cross-sectional view showing a transfer device according to an embodiment. FIG. 6 is a plan view showing a bonding system according to an embodiment. FIG. 7 is a flowchart showing a bonding method according to an embodiment. FIG. 8 is a cross-sectional view showing an example of a substrate. FIG. 9 is a cross-sectional view showing a state at the start of bonding of a bonding device according to an embodiment. FIG. 10 is a cross-sectional view showing a state at the completion of bonding of the bonding device shown in FIG. 9. FIG. 11 is a cross-sectional view showing a state at the start of bonding of a bonding device according to a modified example. FIG. 12 is a cross-sectional view showing a state at the completion of bonding of the bonding device shown in FIG. 11. FIG. 13 is a cross-sectional view showing an example of an irradiation device. FIG. 14 is a cross-sectional view showing a state at the start of peeling of a delamination device. FIG. 15 is a cross-sectional view showing a state in the middle of peeling of the delamination device shown in FIG. 14. FIG. 16 is a cross-sectional view showing a state at the completion of peeling of the delamination device shown in FIG. 14.
[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that the same or corresponding components in each drawing are denoted by the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis direction, Y-axis direction, and Z-axis direction are perpendicular to each other. The X-axis direction and Y-axis direction are horizontal directions, and the Z-axis direction is vertical. The X-axis direction includes the positive X-axis direction and the negative X-axis direction that is opposite to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction that is opposite to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction that is opposite to the positive Z-axis direction.
[0009] First, a transfer system 101 according to one embodiment will be described, mainly with reference to FIGS. 1 to 5. As shown in FIG. 5, the transfer system 101 transfers a die D from a tape TP covering an opening of a frame FR to a carrier A. The carrier A has higher durability than the tape TP. Therefore, as shown in FIGS. 9 and 10 (or FIGS. 11 and 12), the bonding surface Da of the die D can be appropriately treated before bonding the die D to the substrate W, thereby enabling the die D to be appropriately bonded to the substrate W.
[0010] The die D has a second base substrate D1 and a second device D2 formed on the second base substrate D1. The second base substrate D1 is, for example, a silicon wafer or a compound semiconductor wafer. The second device D2 includes a semiconductor element, a circuit, a terminal, or the like. The die D has, on a bonding surface Da with the substrate W, the second device D2 that is electrically connected to a first device W2 of the substrate W. One second device D2 is electrically connected to one first device W2, but multiple second devices D2 may also be electrically connected to one first device W2.
[0011] The multiple dies D are obtained, for example, by dicing the second base substrate D1 or the like while the second base substrate D1 or the like is adhered to the tape TP. The bonding surface Da of the die D is protected by a protective film PF before dicing. The protective film PF is disposed on the opposite side of the die D from the tape TP. The protective film PF is removed before bonding the die D to the substrate W.
[0012] As shown in FIG. 4 , the carrier A has a carrier substrate A1 and a resin film A2, and the die D is attached to the opposite side of the resin film A2 from the carrier substrate A1. The resin film A2 has, for example, adhesiveness. The die D may be adsorbed to the resin film A2 by pressing the die D against the resin film A2. By pressing the die D against the resin film A2, the resin film A2 can be deformed so as to remove gas from between the die D and the resin film A2, and the die D can be vacuum-adsorbed to the resin film A2. The carrier A does not electrostatically adsorb the die D. Therefore, a device for applying a voltage between the carrier A and the die D is not required, and the structure of the transfer device 121 can be simplified.
[0013] The carrier substrate A1 may be conductive or insulating. The carrier substrate A1 may be made of, for example, glass, silicon, aluminum, an aluminum alloy, stainless steel, or titanium. Although not shown, the carrier substrate A1 may have through-holes formed therein that penetrate the carrier substrate A1 in the thickness direction. The die D can be peeled off from the carrier A by supplying gas to the through-holes or inserting pins (not shown) into the through-holes. The number and arrangement of the through-holes are not particularly limited. One or more through-holes may be formed for each die D.
[0014] The resin film A2 is preferably made of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability during modification of the bonding surface Da, the resin film A2 is preferably made of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of the resin film A2 is, for example, 10 μm. In this embodiment, the resin film A2 is a single layer, but may be multiple layers. For example, the resin film A2 may have a polyolefin layer and an acrylic adhesive layer.
[0015] 1, the transfer system 101 includes a loading / unloading station 110, a processing station 120, and a control circuit 190. The loading / unloading station 110 and the processing station 120 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.
[0016] The carry-in / out station 110 includes a mounting table 102. Cassettes C101 to C104 are mounted on the mounting table 102. The cassette C101 accommodates a frame FR on which a die D is attached via a tape TP. The cassette C102 accommodates a frame FR from which the die has been peeled off. The cassette C103 accommodates a carrier A on which the die D has not yet been attached. The cassette C104 accommodates a carrier A on which the die D has been attached (i.e., a die-attached carrier DA).
[0017] The carry-in / out station 110 includes a transfer area 111 and a transfer device 112. The transfer area 111 is adjacent to the mounting table 102. The transfer area 111 extends in the Y-axis direction. The transfer device 112 includes a carrier transfer arm 112a and a frame transfer arm 112b. The carrier transfer arm 112a holds and transfers a carrier A in the transfer area 111. The carrier A to be transferred may be one before a die D is mounted thereon or one after a die D has been mounted thereon (i.e., a die-attached carrier DA). The frame transfer arm 112b holds and transfers a frame FR in the transfer area 111. The frame FR to be transferred may be one on which a die D has been mounted or one on which the die D has been peeled off.
[0018] The transport device 112 has a drive unit (not shown) that moves or rotates the carrier transport arm 112 a and the frame transport arm 112 b. The carrier transport arm 112 a and the frame transport arm 112 b can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around a vertical axis.
[0019] 1, the carrier transport arm 112a and the frame transport arm 112b may be mounted on the same Y-axis slider and moved simultaneously in the Y-axis direction, or may be mounted on different Y-axis sliders and moved independently in the Y-axis direction. The carrier transport arm 112a and the frame transport arm 112b are positioned at different heights.
[0020] The processing station 120 includes a transfer device 121. The transfer device 121 is adjacent to the transfer area 111. The carrier transfer arm 112a holds and transfers the carrier A between the cassettes C103 and C104 and the transfer device 121. The frame transfer arm 112b holds and transfers the frame FR between the cassettes C101 and C102 and the transfer device 121. The transfer device 121 transfers the die D from the tape TP covering the opening of the frame FR onto the carrier A.
[0021] The control circuit 190 is, for example, a computer, and includes an arithmetic unit 191 such as a CPU (Central Processing Unit), and a storage unit 192 such as a memory. The storage unit 192 stores programs that control various processes executed in the transfer system 101. The control circuit 190 controls the operation of the transfer system 101 by causing the arithmetic unit 191 to execute the programs stored in the storage unit 192. A lower-level control circuit that controls the operation of each device constituting the transfer system 101 may be provided, and a higher-level control circuit that controls multiple lower-level control circuits may be provided. The control circuit 190 may be configured with the lower-level control circuit and the higher-level control circuit.
[0022] The control circuit 190 includes electronic circuits such as a CPU, a field programmable gate array (FPGA), or an application specific integrated circuit (ASIC), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.
[0023] Next, a transfer method according to one embodiment will be described. The following operations are performed under the control of the control circuit 190. First, the frame transport arm 112b removes the frame FR on which the die D has been mounted from the cassette C101 and transports it to the transfer device 121. The carrier transport arm 112a removes the carrier A from the cassette C103 and transports it to the transfer device 121. Next, the transfer device 121 transfers the die D from the tape TP covering the opening of the frame FR onto the carrier A. After that, the carrier transport arm 112a removes the carrier A on which the die D has been mounted (i.e., the die-attached carrier DA) from the transfer device 121 and transports it to the cassette C104. The frame transport arm 112b removes the frame FR from which the die D has been peeled from the transfer device 121 and transports it to the cassette C102.
[0024] Next, an example of the transfer device 121 will be described, mainly with reference to Fig. 5. The transfer device 121 includes a frame holding unit 122, a pressing unit 123, a carrier holding unit 124, and a conveying unit 125. The frame holding unit 122 holds a frame FR. The frame FR holds the die D, for example, with the bonding surface Da of the die D facing upward.
[0025] The pressing unit 123 locally presses the die D via the tape TP and locally deforms the tape TP. The pressing unit 123 can push up the dies D individually, which can prevent the dies D from rubbing against each other when the transport unit 125 picks up the dies D. The pressing unit 123 and the frame holding unit 122 are movable relative to each other, so that the position at which the dies D are pushed up can be changed.
[0026] The carrier holding unit 124 holds the carrier A. The carrier A holds the die D, for example, with the bonding surface Da of the die D facing upward. The transport unit 125 transports the die D with the bonding surface Da of the die D facing upward. The transport unit 125 does not turn the die D upside down. The transport unit 125 presses the die D against the resin film A2 to adsorb it.
[0027] The transport unit 125 has a suction head 125a and a moving mechanism 125b. The suction head 125a suctions the die D. The suction head 125a suctions the die D while facing the bonding surface Da of the die D. The bonding surface Da of the die D is covered with a protective film PF, and the suction head 125a suctions the die D via the protective film PF. The suction head 125a contacts the protective film PF, but does not contact the die D. This prevents contamination of the bonding surface Da of the die D.
[0028] The moving mechanism 125b moves the suction head 125a between a peeling position and a mounting position. The peeling position is a position where the suction head 125a peels the die D from the tape TP. The mounting position is a position where the suction head 125a mounts the die D on the carrier A. An alignment mark (not shown) may be provided on the carrier A. The control circuit 190 may correct the mounting position based on an image of the alignment mark.
[0029] Next, a bonding system 1 according to one embodiment will be described, mainly with reference to FIGS. 6 to 16. As shown in FIGS. 9 and 10 (or FIGS. 11 and 12), the bonding system 1 manufactures a laminated substrate DAW by bonding a die-attached carrier DA and a substrate W. The laminated substrate DAW includes the die-attached carrier DA and the substrate W. Then, as shown in FIG. 16, the bonding system 1 manufactures a die-attached substrate DW by removing the carrier A from the laminated substrate DAW. The die-attached substrate DW includes the substrate W and a plurality of dies D bonded to the substrate W.
[0030] 8 and 16, the substrate W has a first base substrate W1 and a plurality of first devices W2 formed on the first base substrate W1. The first base substrate W1 is, for example, a silicon wafer or a compound semiconductor wafer. The first devices W2 include semiconductor elements, circuits, terminals, etc. The substrate W has a plurality of first devices W2 on a bonding surface Wa with the die D. The first devices W2 of the substrate W and the second devices D2 of the die D are electrically connected.
[0031] Although not shown, a second die may be prepared separately from the die D. The second die has a third device on its bonding surface with the substrate W, which is electrically connected to the first device W2 of the substrate W. The third device has a different function, i.e., a different electrical circuit, from the second device D2. The second device D2 and the third device may be electrically connected to one first device W2. Although one third device is electrically connected to one first device W2, multiple third devices may also be electrically connected.
[0032] 6, the bonding system 1 includes a loading / unloading station 2, a first processing station 3, a second processing station 5, and a control circuit 90. The loading / unloading station 2, the first processing station 3, and the second processing station 5 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.
[0033] The carry-in / out station 2 includes a mounting table 20. Cassettes C1 to C4 are mounted on the mounting table 20. Cassette C1 accommodates a carrier A on which a die D is attached (i.e., a die-attached carrier DA). Cassette C2 accommodates a carrier A from which a die D has been peeled. Cassette C3 accommodates a substrate W to which a die-attached carrier DA has not yet been bonded. Cassette C4 accommodates a substrate W from which a carrier A has been removed from a laminated substrate DAW (i.e., a die-attached substrate DW).
[0034] A carrier A is prepared for each substrate W, for example. That is, one carrier A holds all the dies to be bonded to one substrate W. The number of dies mounted on one carrier A, that is, the number of dies mounted on one substrate W, is, for example, 100 or more. In this embodiment, the carrier A holds only multiple dies D having the same function, but may also hold the above-mentioned multiple second dies in addition to the multiple dies D.
[0035] It is preferable that the carrier A has the same diameter as the substrate W. In this case, the transport arm that transports the carrier A and the transport arm that transports the substrate W can be of the same model number (i.e., the same dimensions and the same shape), thereby reducing costs. Similarly, the first activation device 37 and the second activation device 39, or the first hydrophilization device 38 and the second hydrophilization device 40, can also be of the same model number, thereby reducing costs. This also prevents the device from becoming too large.
[0036] As shown in FIG. 6 , the loading / unloading station 2 includes a third transfer region 21 and a third transfer device 22. The third transfer region 21 is adjacent to the mounting table 20. The third transfer region 21 extends in the Y-axis direction. The third transfer device 22 includes a third carrier transfer arm 22a and a third substrate transfer arm 22b. The third carrier transfer arm 22a holds and transfers a carrier A in the third transfer region 21. The carrier A to be transferred may be one to which a die D is attached (i.e., a die-attached carrier DA) or one to which the die D has been removed. The third substrate transfer arm 22b holds and transfers a substrate W in the third transfer region 21. The substrate W to be transferred may be one to which the die-attached carrier DA has not yet been bonded or one to which the carrier A has been removed from the laminated substrate DAW (i.e., a die-attached substrate DW).
[0037] The third transfer device 22 has a drive unit (not shown) that moves or rotates the third carrier transfer arm 22 a and the third substrate transfer arm 22 b. The third carrier transfer arm 22 a and the third substrate transfer arm 22 b can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate about a vertical axis.
[0038] 6, the third carrier transport arm 22a and the third substrate transport arm 22b may be mounted on the same Y-axis slider and moved simultaneously in the Y-axis direction, or may be mounted on different Y-axis sliders and moved independently in the Y-axis direction. The third carrier transport arm 22a and the third substrate transport arm 22b are disposed at different heights.
[0039] The first processing station 3 includes a first transfer region 31 and a first transfer device 32. The first transfer region 31 extends in the X-axis direction. The first transfer device 32 includes a first carrier transfer arm 32a and a first substrate transfer arm 32b. The first carrier transfer arm 32a holds and transfers a carrier A in the first transfer region 31. The carrier A to be transferred may be one to which a die D is attached (i.e., a die-attached carrier DA), one to which a die-attached carrier DA is bonded and a substrate W (i.e., a laminated substrate DAW), or one from which the die D has been peeled off. The first substrate transfer arm 32b holds and transfers a substrate W in the first transfer region 31. The substrate W to be transferred may be one to which a die-attached carrier DA has not yet been bonded, or one to which a carrier A has been removed from a laminated substrate DAW (i.e., a die-attached substrate DW).
[0040] The first transfer device 32 has a drive unit (not shown) that moves or rotates the first carrier transfer arm 32 a and the first substrate transfer arm 32 b. The first carrier transfer arm 32 a and the first substrate transfer arm 32 b can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate about a vertical axis.
[0041] 6, the first carrier transport arm 32a and the first substrate transport arm 32b may be mounted on the same X-axis slider and moved simultaneously in the X-axis direction, or may be mounted on different X-axis sliders and moved independently in the X-axis direction. The first carrier transport arm 32a and the first substrate transport arm 32b are disposed at different heights.
[0042] The first processing station 3 includes a third transition device 34, a fourth transition device 35, a cleaning device 36, a first activating device 37, a first hydrophilizing device 38, a second activating device 39, a second hydrophilizing device 40, and a bonding device 41. The third transition device 34, the fourth transition device 35, the cleaning device 36, the first activating device 37, the first hydrophilizing device 38, the second activating device 39, the second hydrophilizing device 40, and the bonding device 41 are adjacent to the first transport region 31.
[0043] The third transition device 34 is provided between the third transfer region 21 and the first transfer region 31 and temporarily stores the carrier A. The third transition device 34 relays the carrier A between the third carrier transfer arm 22a and the first carrier transfer arm 32a. The relayed carrier A may be one to which the die D is attached (i.e., die-attached carrier DA) or one from which the die D has been peeled off.
[0044] The fourth transition device 35 is provided between the third transfer region 21 and the first transfer region 31 and temporarily stores the substrate W. The fourth transition device 35 relays the substrate W between the third substrate transport arm 22 b and the first substrate transport arm 32 b. The relayed substrate W may be a substrate W to which the die-attached carrier DA has not yet been bonded, or a substrate W from which the carrier A has been removed from the laminated substrate DAW (i.e., a die-attached substrate DW).
[0045] The cleaning device 36 removes the protective film PF from the die D while the die D is held by the carrier A. The protective film PF protects the bonding surface Da of the die D, for example, during dicing. If the protective film PF is water-soluble, the cleaning device 36 supplies pure water to the protective film PF. After removing the protective film PF from the die D, the cleaning device 36 may further clean the bonding surface Da of the die D. This can improve the quality of the subsequent processing of the bonding surface Da of the die D.
[0046] The first activation device 37 activates the bonding surface Da of the die D while the die D is held by the carrier A. The first activation device 37 is, for example, a plasma processing device. In the first activation device 37, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The bonding surface Da of the die D is activated by irradiating the oxygen ions onto the bonding surface Da of the die D. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.
[0047] The first hydrophilization device 38 hydrophilizes the bonding surface Da of the die D while the die D is held by the carrier A. For example, the first hydrophilization device 38 supplies pure water (e.g., deionized water) onto the die D while rotating the carrier A held by the spin chuck. The pure water imparts OH groups to the bonding surface Da of the die D, which has been activated in advance. The die D and the substrate W can be bonded together by utilizing hydrogen bonding between the OH groups.
[0048] The second activation device 39 activates the bonding surface Wa of the substrate W. The second activation device 39 is, for example, a plasma processing device. In the second activation device 39, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The bonding surface Wa of the substrate W is activated by irradiating the oxygen ions onto the bonding surface Wa of the substrate W. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.
[0049] The second hydrophilization device 40 hydrophilizes the bonding surface Wa of the substrate W. For example, the second hydrophilization device 40 supplies pure water (e.g., deionized water) onto the substrate W while rotating the substrate W held by the spin chuck. The pure water provides OH groups to the bonding surface Wa of the substrate W, which has been activated in advance. The die D and the substrate W can be bonded by utilizing hydrogen bonds between the OH groups.
[0050] As shown in FIGS. 9 and 10 (or FIGS. 11 and 12), the bonding device 41 bonds a substrate W and a die-attached carrier DA together, thereby bonding multiple dies D to the substrate W at once. A plurality of first devices W2 and a plurality of second devices D2 are electrically connected together. Compared to bonding the dies D to the substrate W one by one, the time required to bond each of the multiple dies D can be made uniform, and variations in bonding quality can be reduced. Details of the bonding device 41 will be described later.
[0051] It is also possible to attach multiple dies D to a tape TP, stretch the tape TP radially, and then simultaneously bond the multiple dies D to the substrate W. The bonding positions of the multiple dies D are adjusted by adjusting the stretching method of the tape TP. In this case, the bonding positions cannot be adjusted for each die D, resulting in reduced accuracy of the bonding positions. According to this embodiment, the transfer device 121 adjusts the mounting position of each die D, thereby improving the accuracy of the bonding positions of the dies D. It is also possible to transport the dies D one by one from the tape TP to the carrier A in order to adjust the mounting position of each die D, but this does not increase variation in bonding quality. This is because the carrier A is eventually separated from the dies D.
[0052] The second processing station 5 includes a second transfer region 51 and a second transfer device 52. The second transfer region 51 extends in the X-axis direction. The second transfer device 52 includes a second carrier transfer arm 52a and a second substrate transfer arm 52b. The second carrier transfer arm 52a holds and transfers a carrier A in the second transfer region 51. The carrier A to be transferred may be a die-attached carrier DA and a substrate W bonded together (i.e., a laminated substrate DAW), or a substrate from which the die D has been peeled off. The second substrate transfer arm 52b holds and transfers a substrate W in the second transfer region 51. The substrate W to be transferred may be a die-attached carrier DA and a substrate W bonded together (i.e., a laminated substrate DAW), or a laminated substrate DAW from which the carrier A has been removed (i.e., a die-attached substrate DW).
[0053] The second transfer device 52 has a drive unit (not shown) that moves or rotates the second carrier transfer arm 52 a and the second substrate transfer arm 52 b. The second carrier transfer arm 52 a and the second substrate transfer arm 52 b can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and can rotate about a vertical axis.
[0054] 6, the second carrier transport arm 52a and the second substrate transport arm 52b may be mounted on the same X-axis slider and moved simultaneously in the X-axis direction, or may be mounted on different X-axis sliders and moved independently in the X-axis direction. The second carrier transport arm 52a and the second substrate transport arm 52b are disposed at different heights.
[0055] The second processing station 5 includes a first transition device 54, a second transition device 55, an inversion device 56, an annealing device 57, an irradiation device 58, and a peeling device 59. The first transition device 54, the second transition device 55, the inversion device 56, the annealing device 57, the irradiation device 58, and the peeling device 59 are adjacent to the second transfer region 51.
[0056] The first transition device 54 is provided between the first transfer region 31 and the second transfer region 51 and temporarily stores the carrier A. The first transition device 54 relays the carrier A between the first carrier transfer arm 32a and the second carrier transfer arm 52a. The relaying carrier A may be a carrier DA with a die attached and a substrate W bonded together (i.e., a laminated substrate DAW), or a carrier A from which the die D has been peeled off.
[0057] The second transition device 55 is provided between the first transfer region 31 and the second transfer region 51 and temporarily stores the substrate W. The second transition device 55 relays the substrate W between the first substrate transport arm 32b and the second substrate transport arm 52b. The relayed substrate W may be a laminated substrate DAW from which the carrier A has been removed (i.e., a die-attached substrate DW).
[0058] The inversion device 56 inverts the laminated substrate DAW upside down so that the carrier substrate A1 faces upward. The inversion (step S108) is preferably performed after the annealing (step S107) and before the ultraviolet irradiation (step S109). In other words, the inversion is preferably performed after the bonding strength between the die D and the substrate W is improved and before the adhesiveness of the resin film A2 is reduced.
[0059] The annealing device 57 anneals (heats) the laminated substrate DAW. Before the heat treatment, the die D and the substrate W are bonded by hydrogen bonds between OH groups. The heat treatment causes a dehydration condensation reaction, which creates covalent bonds and improves the bonding strength between the die D and the substrate W.
[0060] After bonding (step S106) and before peeling (step S110), the irradiation device 58 irradiates the resin film A2 with ultraviolet light through the carrier substrate A1, as shown in FIG. 13. The carrier substrate A1 may be a glass substrate from the viewpoint of improving ultraviolet light transmittance. By irradiating the resin film A2 with ultraviolet light, the adhesiveness of the resin film A2 can be reduced, making it easier to peel the carrier A and the die D from each other.
[0061] The peeling device 59 peels off the multiple dies D and the carrier A, as shown in Figures 14 to 16. The carrier A can be removed from the laminated substrate DAW, and the carrier A can be separated from the die-attached substrate DW. The separated carrier A can be reused after the resin film A2 is replaced. Details of the peeling device 59 will be described later.
[0062] The control circuit 90 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the bonding system 1. The control circuit 90 controls the operation of the bonding system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. A lower-level control circuit that controls the operation of each device that constitutes the bonding system 1 may be provided, and a higher-level control circuit that controls multiple lower-level control circuits may be provided. The control circuit 90 may be configured with the lower-level control circuit and the higher-level control circuit.
[0063] The control circuit 90 includes electronic circuits such as a CPU, a field programmable gate array (FPGA), or an application specific integrated circuit (ASIC), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.
[0064] Next, a bonding method according to one embodiment will be described with reference to Fig. 7. The process of Fig. 7 is performed under the control of a control circuit 90.
[0065] First, the third carrier transport arm 22a takes out the die-attached carrier DA from the cassette C1 and transports it to the third transition device 34. Next, the first carrier transport arm 32a takes out the die-attached carrier DA from the third transition device 34 and transports it to the cleaning device 36.
[0066] Next, the cleaning device 36 removes the protective film PF from the die D while the die D is held by the carrier A (step S101). After that, the first carrier transport arm 32a takes out the die-attached carrier DA from the cleaning device 36 and transports it to the first activation device 37.
[0067] Next, the first activation device 37 activates the bonding surface Da of the die D while the die D is held by the carrier A (step S102). After that, the first carrier transport arm 32a takes out the die-attached carrier DA from the first activation device 37 and transports it to the first hydrophilization device 38.
[0068] Next, the first hydrophilizing device 38 hydrophilizes the bonding surface Da of the die D while the die D is held by the carrier A (step S103). Thereafter, the first carrier transport arm 32a takes out the die-attached carrier DA from the first hydrophilizing device 38 and transports it to the bonding device 41.
[0069] In parallel with the above steps S101 to S103, the following steps S104 to S105 are performed. First, the third substrate transport arm 22b takes out the substrate W from the cassette C3 and transports it to the fourth transition device 35. Thereafter, the first substrate transport arm 32b takes out the substrate W from the fourth transition device 35 and transports it to the second activation device 39.
[0070] Next, the second activation device 39 activates the bonding surface Wa of the substrate W (step S104). Thereafter, the first substrate transport arm 32b takes the substrate W out of the second activation device 39 and transports it to the second hydrophilization device 40.
[0071] Next, the second hydrophilizing device 40 hydrophilizes the bonding surface Wa of the substrate W (step S105). Thereafter, the first substrate transport arm 32b takes out the substrate W from the second hydrophilizing device 40 and transports it to the bonding device 41.
[0072] Next, the bonding device 41 bonds the substrate W and the die-attached carrier DA, thereby bonding multiple dies D to the substrate W at once (step S106). This results in a laminated substrate DAW. Thereafter, the first carrier transport arm 32a removes the laminated substrate DAW from the bonding device 41 and transports it to the first transition device 54. Subsequently, the second carrier transport arm 52a removes the laminated substrate DAW from the first transition device 54 and transports it to the annealing device 57.
[0073] Next, the annealing device 57 anneals (heats) the laminated substrate DAW (step S107). The heat treatment causes a dehydration condensation reaction, which generates covalent bonds and improves the bonding strength between the die D and the substrate W. Thereafter, the second carrier transport arm 52a removes the laminated substrate DAW from the annealing device 57 and transports it to the inverting device 56.
[0074] Next, the reversing device 56 turns the multilayer substrate DAW upside down (step S108). This allows the carrier substrate A1 to face up. Thereafter, the second substrate transport arm 52b takes the multilayer substrate DAW out of the reversing device 56 and transports it to the irradiation device 58.
[0075] Next, the irradiation device 58 irradiates the resin film A2 with ultraviolet light through the carrier substrate A1 (step S109). By irradiating the resin film A2 with ultraviolet light, the adhesiveness of the resin film A2 can be reduced, making it easier to peel the die D from the carrier A. Thereafter, the second substrate transport arm 52b takes out the laminated substrate DAW from the irradiation device 58 and transports it to the peeling device 59.
[0076] Next, the peeling device 59 peels the dies D from the carrier A (step S110). The carrier A can be removed from the laminated substrate DAW, and the carrier A and the die-attached substrate DW can be separated. The separated carrier A can be reused after the resin film A2 is replaced.
[0077] Thereafter, the second substrate transport arm 52b takes out the die-attached substrate DW from the peeling device 59 and transports it to the second transition device 55. Next, the first substrate transport arm 32b takes out the die-attached substrate DW from the second transition device 55 and transports it to the fourth transition device 35. Finally, the third substrate transport arm 22b takes out the die-attached substrate DW from the fourth transition device 35 and stores it in cassette C4.
[0078] Furthermore, the second carrier transport arm 52a removes carrier A from the peeling device 59 and transports it to the first transition device 54. Next, the first carrier transport arm 32a removes carrier A from the first transition device 54 and transports it to the third transition device 34. Finally, the third carrier transport arm 22a removes carrier A from the third transition device 34 and stores it in cassette C2.
[0079] Next, details of a bonding apparatus 41 according to one embodiment will be described, mainly with reference to Figures 9 and 10. The bonding apparatus 41 includes, for example, a first holding unit 61, a second holding unit 62, and a drive unit 63. The first holding unit 61 holds the substrate W from the opposite side to the second holding unit 62, with the bonding surface Wa of the substrate W facing the second holding unit 62. The second holding unit 62 holds the die-attached carrier DA from the opposite side to the first holding unit 61, with the bonding surface Da of the die D facing the first holding unit 61. The drive unit 63 moves the first holding unit 61 and the second holding unit 62 relative to each other, thereby bonding the substrate W and the die-attached carrier DA together and bonding multiple dies D to the substrate W at once.
[0080] The first holding part 61 is provided, for example, above the second holding part 62. The first holding part 61 holds the substrate W from above with the bonding surface Wa of the substrate W facing downward. The first holding part 61 vacuum-sucks the substrate W. The second holding part 62 holds the die-attached carrier DA from below with the bonding surface Da of the die D facing upward, for example. The second holding part 62 vacuum-sucks the die-attached carrier DA.
[0081] The positions of the first holding unit 61 and the second holding unit 62 may be reversed, and the first holding unit 61 may be provided below the second holding unit 62. That is, the first holding unit 61 may hold the substrate W from below with the bonding surface Wa of the substrate W facing upward. Furthermore, the second holding unit 62 may hold the die-attached carrier DA from above with the bonding surface Da of the die D facing downward.
[0082] The bonding device 41 may include a first imaging unit 64 and a second imaging unit 65. The first imaging unit 64 images the bonding surface Wa of the substrate W held by the first holding unit 61. The first imaging unit 64 is provided in the second holding unit 62. The second imaging unit 65 images the bonding surface Da of the die D constituting the die-attached carrier DA held by the second holding unit 62. The second imaging unit 65 is provided in the first holding unit 61. The second imaging unit 65 may image an alignment mark of the carrier A instead of imaging the bonding surface Da of the die D.
[0083] The control circuit 90 controls the drive unit 63 based on images captured by the first imaging unit 64 and the second imaging unit 65. The drive unit 63 includes, for example, a first drive unit 63a and a second drive unit 63b. The first drive unit 63a rotates the first holding unit 61 around a vertical axis. The second drive unit 63b moves the second holding unit 62 in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction (the Z-axis direction). After aligning the substrate W and the die D, the substrate W and the die D can be bonded. The configuration of the drive unit 63 is not particularly limited. The drive unit 63 may rotate and move only one of the first holding unit 61 and the second holding unit 62.
[0084] In this embodiment, the bonding device 41 bonds the substrate W and the die-attached carrier DA while holding both the substrate W and the die-attached carrier DA horizontally as shown in Figures 9 and 10, but the substrate W and the die-attached carrier DA may be bonded by bending at least one of the substrate W and the die-attached carrier DA as shown in Figures 11 and 12. The following mainly describes the differences between the bonding device 41 according to the modified example and the bonding device 41 according to the above embodiment.
[0085] 11 and 12, the drive unit 63 may have a pushing unit 63c. The pushing unit 63c has, for example, a pushing pin that pushes the center of the substrate W toward the die-attached carrier DA. The pushing unit 63c is provided on the first holding unit 61. The first holding unit 61 holds the center and the peripheral edge of the substrate W independently.
[0086] First, as shown by the solid line in Fig. 11 , a desired gap is formed between the substrate W and the die-attached carrier DA. At this time, the first holding part 61 holds both the central portion and the peripheral portion of the substrate W. Next, the first holding part 61 releases its hold on the central portion of the substrate W, and the pushing part 63c pushes the central portion of the substrate W toward the die-attached carrier DA. As a result, as shown by the dashed line in Fig. 11 , the central portion of the substrate W comes into contact with the die D, and the central portion of the substrate W and the die D are bonded together.
[0087] 12, the first holding unit 61 releases its hold on the peripheral portion of the substrate W, causing the peripheral portion of the substrate W to fall due to gravity. As a result, the peripheral portion of the substrate W comes into contact with the die D, and the peripheral portion of the substrate W and the die D are bonded together. Bonding of the substrate W and the die D can be carried out sequentially from the center of the substrate W toward the peripheral portion. This makes it possible to prevent air bubbles from being trapped.
[0088] In this modification, the pushing unit 63c pushes the center of the substrate W toward the die-attached carrier DA, but it may also push the center of the die-attached carrier DA toward the substrate W. In this case, the pushing unit 63c is provided on the second holding unit 62. In this case, the second holding unit 62 independently holds the center of the die-attached carrier DA and the peripheral edge of the die-attached carrier DA.
[0089] Next, details of a peeling device 59 according to one embodiment will be described, mainly with reference to Figures 14 to 16. The peeling device 59 peels multiple dies D from the carrier A. It can remove the carrier A from the laminated substrate DAW, and separate the carrier A from the die-attached substrate DW. The peeling device 59 sequentially peels the carrier A from the die D from the other end of the carrier A. The peeling device 59 includes, for example, a first holding unit 71, a second holding unit 72, a peel start point forming unit 73, and a peel progress unit 74.
[0090] The first holding unit 71 holds one side (e.g., the bottom side) of the laminated substrate DAW. The first holding unit 71 holds, for example, the substrate W. The second holding unit 72 holds the opposite side (e.g., the top side) of the laminated substrate DAW. The second holding unit 72 holds, for example, the carrier A. The peel start point forming unit 73 forms a peel start point at the interface between the die D and the carrier A by inserting a blade 73a into the interface. The peel progress unit 74 bends and deforms the second holding unit 72, thereby sequentially progressing the peeling between the carrier A and the die D from one end (the peel start point) of the carrier A to the other end.
[0091] The second holding portion 72 has, for example, a plurality of suction pads 72a and an elastic plate 72b that holds the plurality of suction pads 72a. The plurality of suction pads 72a are each suspended from a horizontal elastic plate 72b and vacuum-suck the top surface of the laminated substrate DAW. One suction pad 72a is positioned so as to overlap the peeling start point when viewed from above. The remaining suction pads 72a are positioned at intervals in the direction of peeling. The top surface of the laminated substrate DAW deforms in response to the bending deformation of the elastic plate 72b.
[0092] The peeling progression unit 74 has, for example, a plurality of actuators 74a, 74b. The plurality of actuators 74a, 74b are suspended from a fixed portion 74c. An elastic plate 72b is fixed to the lower end of each of the plurality of actuators 74a, 74b. The plurality of actuators 74a, 74b are arranged at intervals in the peeling progression direction, and by sequentially lifting the elastic plate 72b as shown in FIGS. 14 to 16 , the peeling between the carrier A and the die D progresses sequentially from one end (the peeling starting point) of the carrier A to the other end.
[0093] Although the embodiments of the substrate processing method, bonding apparatus, and bonding system according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.
[0094] This application claims priority based on Japanese Patent Application No. 2023-146598 filed with the Japan Patent Office on September 11, 2023, the entire contents of which are incorporated herein by reference.
[0095] 1 Bonding system 41 Bonding device A Carrier A1 Carrier substrate A2 Resin film D Die D1 Second base substrate D2 Second device Da Bonding surface DA Die-attached carrier DW Die-attached substrate W Substrate W1 First base substrate W2 First device Wa Bonding surface
Claims
1. A substrate processing method comprising: preparing a substrate having a first base substrate and a plurality of first devices formed on the first base substrate; preparing a die-attached carrier having a carrier substrate, a carrier having a resin film formed on the carrier substrate, and a plurality of dies attached to the carrier substrate via the resin film; and bonding the substrate and the die-attached carrier to collectively bond the plurality of dies to the substrate, wherein each of the plurality of dies has a second base substrate and a second device formed on the second base substrate, and the plurality of first devices and the plurality of second devices are electrically connected collectively.
2. The method of claim 1, further comprising the step of peeling off the plurality of dies from the carrier after bonding the substrate and the die-carrying carrier.
3. The substrate processing method according to claim 2, wherein the carrier substrate is a glass substrate, and the substrate processing method includes irradiating the resin film with ultraviolet light through the glass substrate after bonding the substrate and the die-attached carrier and before peeling off the plurality of dies from the carrier.
4. A substrate processing method according to any one of claims 1 to 3, comprising: activating a bonding surface of each of the plurality of dies while the plurality of dies are attached to the carrier substrate via the resin film; and hydrophilizing a bonding surface of each of the plurality of dies while the plurality of dies are attached to the carrier substrate via the resin film.
5. The substrate processing method according to any one of claims 1 to 3, comprising: activating the bonding surface of the substrate; and rendering the bonding surface of the substrate hydrophilic.
6. A bonding apparatus comprising: a first holding section for holding a substrate having a first base substrate and a plurality of first devices formed on the first base substrate; a second holding section for holding a die-attached carrier having a carrier substrate, a carrier having a resin film formed on the carrier substrate, and a plurality of dies attached to the carrier substrate via the resin film; and a drive section for bonding the substrate and the die-attached carrier by moving the first holding section and the second holding section relatively to each other, and bonding the plurality of dies to the substrate collectively, wherein each of the plurality of dies has a second base substrate and a second device formed on the second base substrate, and a plurality of the first devices and a plurality of the second devices are electrically connected collectively.
7. A bonding system comprising: the bonding apparatus according to claim 6; and a peeling apparatus that peels off the plurality of dies from the carrier after the bonding apparatus bonds the substrate and the die-carrying carrier together.
8. The bonding system according to claim 7, wherein the carrier substrate is a glass substrate, and the bonding system includes an irradiation device that irradiates the resin film with ultraviolet light through the glass substrate after the bonding device bonds the substrate and the die-attached carrier and before the peeling device peels the plurality of dies from the carrier.
9. The bonding system described in claim 7 or 8, comprising: a first activation device that activates the bonding surfaces of each of the multiple dies while the multiple dies are attached to the carrier substrate via the resin film; a first hydrophilization device that hydrophilizes the bonding surfaces of each of the multiple dies while the multiple dies are attached to the carrier substrate via the resin film; and a first transport device that transports the die-attached carrier to the first activation device, the first hydrophilization device, and the bonding device in this order.
10. The bonding system according to claim 9, further comprising: a second transport device that transports a laminated substrate composed of the substrate and the die-attached carrier bonded by the bonding device to the peeling device; and a first transition device that relays the laminated substrate between the first transport device and the second transport device.
11. The bonding system according to claim 7 or 8, comprising: a second activation device that activates the bonding surfaces of the substrates; a second hydrophilization device that hydrophilizes the bonding surfaces of the substrates; and a first transport device that transports the substrates to the second activation device, the second hydrophilization device, and the bonding device in this order.
12. The bonding system according to claim 11, further comprising: a second transport device that transports a laminated substrate composed of the substrate and the die-attached carrier bonded by the bonding device to the peeling device; and a first transition device that relays the laminated substrate between the first transport device and the second transport device.
Citation Information
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