Light-emitting device, electronic apparatus, and method for manufacturing light-emitting device

Abstract

A light-emitting device according to one embodiment of the present disclosure comprises: a substrate that has a light-emitting region and a non-light-emitting region; a plurality of light-emitting units provided in the light-emitting region; a protective layer provided over the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting units; and a color filter layer provided on the protective layer, wherein the layer thickness of the protective layer is different between the light-emitting region and the non-light-emitting region.

Description

Light-emitting device, electronic device, and method for manufacturing the same

[0001] The present disclosure relates to a light-emitting device, an electronic device, and a method for manufacturing a light-emitting device.

[0002] In recent years, light-emitting elements having a current-driven light-emitting portion have been developed. For example, light-emitting elements using organic electroluminescence elements (organic EL elements) as light-emitting portions have attracted attention as light-emitting elements capable of emitting high-brightness light when driven by low-voltage direct current. In addition to the light-emitting portion, these light-emitting elements have a color filter layer (CF layer), a protective layer (sealing layer), and the like (see, for example, Patent Document 1). The light-emitting portion is formed, for example, by providing an organic layer between an anode and a cathode. Furthermore, the color filter layer is provided above the light-emitting portion via a protective layer.

[0003] In display devices using such light-emitting elements as pixels, for example, pixel size is being reduced due to increased resolution, and in addition, there is a trend to shorten the distance between the organic layer and the color filter layer so as not to deteriorate the chromaticity viewing angle characteristics. In order to shorten this distance between the layers, it is desirable to reduce the thickness of the protective layer.

[0004] JP 2015-11855 A

[0005] However, a thinner protective layer results in insufficient sealing reliability. For example, when forming organic layers, electrodes, and the like, a mask is used to form patterns. During this process, contact between the mask and the substrate can result in dents on the substrate caused by the mask, or foreign matter adhering to the mask can be transferred to the substrate. Moisture can penetrate from the outside through defects originating from these dents or foreign matter, causing damage to the organic layers, electrodes, and the like. This external moisture penetration can result in non-light-emitting areas in pixel regions, reducing device reliability.

[0006] Therefore, the present disclosure proposes a light emitting device, an electronic device, and a method for manufacturing a light emitting device that can improve the device reliability.

[0007] A light-emitting device according to one embodiment of the present disclosure comprises a substrate having a light-emitting region and a non-light-emitting region, a plurality of light-emitting sections provided in the light-emitting region, a protective layer provided across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections, and a color filter layer provided on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region.

[0008] An electronic device according to one embodiment of the present disclosure includes a light-emitting device having a substrate having a light-emitting region and a non-light-emitting region, a plurality of light-emitting sections provided in the light-emitting region, a protective layer provided across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections, and a color filter layer provided on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region.

[0009] A method for manufacturing a light-emitting device according to one embodiment of the present disclosure includes providing a plurality of light-emitting sections in a light-emitting region on a substrate having the light-emitting region and a non-light-emitting region, providing a protective layer across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections, and providing a color filter layer on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region.

[0010] 1 is a diagram illustrating an example of a configuration of a display device according to an embodiment of the present disclosure; FIG. 2 is a diagram illustrating an example of a configuration of a circuit of a light-emitting element according to an embodiment of the present disclosure; FIG. 3 is a diagram illustrating an example of a configuration of a structure of a light-emitting element according to an embodiment of the present disclosure; FIG. 4 is a diagram illustrating an example of setting a region of a display device according to an embodiment of the present disclosure; FIG. 5 is a diagram illustrating an example of a display device according to an embodiment of the present disclosure; FIG. 6 is a diagram illustrating an example of a display device according to an embodiment of the present disclosure; FIG. 7 is a diagram illustrating an example of a display device according to an embodiment of the present disclosure; FIG. 8 is a diagram illustrating an example of a process of a manufacturing method of a display device according to an embodiment of the present disclosure; FIG. 9 is a diagram illustrating an example of a process of a manufacturing method of a display device according to an embodiment of the present disclosure; FIG. 10 is a diagram illustrating an example of a planar shape of a step portion of a protective layer according to an embodiment of the present disclosure; FIG. 10 is a diagram for explaining an example of a planar shape of a step portion of a protective layer according to an embodiment of the present disclosure. FIG. 11 is a diagram for explaining an example of a planar shape of a step portion of a protective layer according to an embodiment of the present disclosure. FIG. 12 is a diagram for explaining an example of a planar shape of a step portion of a protective layer according to an embodiment of the present disclosure. FIG. 13 is a schematic cross-sectional view for explaining a first example of a resonator structure. FIG. 14 is a schematic cross-sectional view for explaining a second example of a resonator structure. FIG. 15 is a schematic cross-sectional view for explaining a third example of a resonator structure. FIG. 16 is a schematic cross-sectional view for explaining a fourth example of a resonator structure. FIG. 17 is a schematic cross-sectional view for explaining a fifth example of a resonator structure. FIG. 18 is a schematic cross-sectional view for explaining a sixth example of a resonator structure. FIG. 19 is a schematic cross-sectional view for explaining a seventh example of a resonator structure. FIG. 19 is a conceptual diagram for explaining a first example of a shift structure.1 is a conceptual diagram for explaining a second example of a shift structure. FIG. 2 is a conceptual diagram for explaining a third example of a shift structure. FIG. 3 is a conceptual diagram for explaining a fourth example of a shift structure. FIG. 4 is a conceptual diagram for explaining a fifth example of a shift structure. FIG. 5 is a conceptual diagram for explaining a sixth example of a shift structure. FIG. 6 is a conceptual diagram for explaining a seventh example of a shift structure. A diagram showing an example of the appearance of a smartphone. A diagram showing an example of the appearance of a digital still camera. A diagram showing an example of the appearance of a digital still camera. A diagram showing an example of the appearance of a head mounted display. A diagram showing an example of the appearance of a see-through head mounted display. A diagram showing an example of the appearance of a television device. A diagram showing an example of the internal configuration of a vehicle. A diagram showing an example of the internal configuration of a vehicle.

[0011] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments include examples and modified examples. Note that the embodiments do not limit the devices, equipment, methods, etc. according to the present disclosure. Furthermore, in the following embodiments, essentially identical components are designated by the same reference numerals, and redundant explanations will be omitted.

[0012] One or more of the following embodiments can be implemented independently. However, at least a portion of the following embodiments may be implemented in appropriate combination with at least a portion of another embodiment. These embodiments may include novel features that are different from one another. Therefore, each embodiment may contribute to solving different purposes or problems, and may achieve different effects. Note that the effects of each embodiment are merely examples and are not intended to be limiting, and other effects may also be achieved.

[0013] The present disclosure will be described in the following order: 1. Embodiments 1-1. Configuration example of a display device 1-2. Configuration example of a circuit of a light-emitting element 1-3. Configuration example of the structure of a light-emitting element 1-4. Example of setting an area of ​​a display device 1-5. Example of a display device 1-6. Example of a process of a manufacturing method of a display device 1-7. Example of a shape of a planar shape of a stepped portion of a protective layer 1-8. Actions and effects 2. Modifications 2-1. Configuration example of a resonator structure 2-2. Configuration example of a shift structure 3. Other embodiments 4. Application examples 5. Supplementary notes

[0014] <1. Embodiment> <1-1. Configuration Example of Display Device> A configuration example of a display device 1 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a configuration example of a display device 1 according to this embodiment.

[0015] As shown in Fig. 1, the display device 1 includes a plurality of light-emitting elements 100, a horizontal drive circuit 11, and a vertical drive circuit 12. The light-emitting elements 100 are arranged, for example, in a matrix. The horizontal drive circuit 11 and the vertical drive circuit 12 are circuits for driving the light-emitting elements 100, respectively. In the example of Fig. 1, the horizontal drive circuit 11 and the vertical drive circuit 12 are each arranged on an end side of the display device 1, but their arrangement is not particularly limited.

[0016] The display device 1 also includes a plurality of scanning lines SCL, a plurality of signal lines DTL, and a plurality of power supply lines (not shown). Each of the scanning lines SCL is a line for scanning the light-emitting elements 100. Each of the signal lines DTL is a line for supplying various voltages to the light-emitting elements 100. Each of the power supply lines is a line for supplying a drive voltage to the light-emitting elements 100.

[0017] The light-emitting elements 100 are arranged in a matrix, for example, M in the horizontal direction (X direction in FIG. 1 ) and N in the vertical direction (Y direction in FIG. 1 ), for a total of M×N elements. One light-emitting element 100 may function as one pixel, or one light-emitting element 100 may function as a sub-pixel, and a set of multiple sub-pixels may function as one pixel.

[0018] 1, the light emitting element 100 corresponding to red display (R: wavelength 620 nm to 750 nm) is marked with the symbol R, the light emitting element 100 corresponding to green display (G: wavelength 495 nm to 570 nm) is marked with the symbol G, and the light emitting element 100 corresponding to blue display (B: wavelength 450 nm to 495 nm) is marked with the symbol B. The display device 1 is a display device capable of color display.

[0019] Such a display device 1 is an example of a light-emitting device. Examples of display devices include various displays for televisions, personal computers, VR (Virtual Reality), MR (Mixed Reality), and AR (Augmented Reality), as well as EVFs (Electronic View Finders), small projectors, etc. In addition to the display device 1, examples of light-emitting devices include lighting devices.

[0020] <1-2. Example of circuit configuration of light-emitting element> An example of the circuit configuration of the light-emitting element 100 according to this embodiment will be described with reference to Fig. 2. Fig. 2 is a diagram showing an example of the circuit configuration of the light-emitting element 100 according to this embodiment. In the example of Fig. 2, the wiring relationship for one light-emitting element 100 is shown.

[0021] 2, the light emitting element 100 includes a light emitting unit 101 and a drive circuit 102. The light emitting unit 101 is, for example, a current-driven light emitting unit. The drive circuit 102 is a circuit that controls the light emission of the light emitting unit 101. The drive circuit 102 includes, for example, a write transistor TR Ｗ and the driving transistor TR Ｄ and the capacitance part C Ｓ and,

[0022] Write transistor TR Ｗ is a transistor for writing a video signal. Ｄ is a transistor that passes a current to the light emitting portion 101. Ｗ and the driving transistor TR Ｄ is composed of, for example, a p-channel transistor.

[0023] Capacity part C Ｓ is the driving transistor TR Ｄ When the light emitting element 100 emits light, the gate electrode of the driving transistor TR ＤOne of the source / drain regions (the side connected to the power supply line PS1 in FIG. 2) serves as a source region, and the other source / drain region serves as a drain region.

[0024] This capacitance part C Ｓ is the driving transistor TR Ｄ and the source / drain region of the driving transistor TR Ｄ The driving transistor TR is connected between the gate electrode of the driving transistor TR Ｄ The other source / drain region is connected to the anode electrode of the light emitting portion 101 .

[0025] The light-emitting unit 101 is configured, for example, by an organic electroluminescence element (organic EL element). This light-emitting unit 101 is, for example, a current-driven light-emitting unit whose light-emitting brightness changes according to the current value. For example, the light-emitting unit 101 has a well-known configuration and structure including an anode electrode, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode electrode, etc.

[0026] The other end of the light-emitting unit 101 (specifically, the cathode electrode) is connected to a common power supply line PS2. A predetermined voltage V Ｃat (for example, ground potential) is supplied. The capacitance of the light emitting unit 101 is denoted by the symbol C ＥＬ The capacitance C of the light emitting unit 101 is expressed as follows: ＥＬ If the small capacitance causes problems in driving the light-emitting unit 101, an auxiliary capacitance may be connected in parallel to the light-emitting unit 101 as necessary.

[0027] Write transistor TR Ｗ , a gate electrode connected to a scanning line SCL, one source / drain region connected to a signal line (data line) DTL, and a driving transistor TR Ｄ The signal voltage from the signal line DTL is applied to the write transistor TR Ｗ via the capacitance section C Ｓ is written to.

[0028] Power supply voltage V ＣＣ is supplied from a power supply unit (not shown) through a power supply line PS1 to the driving transistor TR ＤThe video signal voltage V from the signal line DTL is applied to one of the source / drain regions. Ｓｉｇ is the write transistor TR Ｗ via the capacitance section C Ｓ When written to the capacitance section C Ｓ is (V ＣＣ -V Ｓｉｇ ) to the driving transistor TR Ｄ The gate-source voltage of the driving transistor TR is maintained as Ｄ The drain current I ｄｓ flows, and the light emitting unit 101 emits light at a brightness according to the current value.

[0029] I ｄｓ = k μ ((V ＣＣ -V Ｓｉｇ )-|V ｔｈ |) ２ (1) where μ is the effective mobility, L is the channel length, W is the channel width, and V ｔｈ : threshold voltage, C ｏｘ : (relative permittivity of gate insulating layer) × (dielectric constant of vacuum) / (thickness of gate insulating layer), k≡(½) × (W / L) × C ｏｘ Let's say.

[0030] <1-3. Example of the Structure of the Light-Emitting Element> An example of the structure of the light-emitting element 100 according to this embodiment will be described with reference to Fig. 3. Fig. 3 is a diagram showing an example of the structure of the light-emitting element 100 according to this embodiment. In the example of Fig. 3, a cross-sectional view of the structure of the light-emitting element 100 is shown.

[0031] 3 , the display device 1 has a plurality of light-emitting elements 100. Each of the light-emitting elements 100 includes a substrate 10, an anode layer 20, an organic layer 30, a cathode layer 40, a protective layer 50, a color filter layer 60, a filling layer 70, a sealing layer 80, and a transparent substrate 90.

[0032] Specifically, an anode layer 20, an organic layer 30, a cathode layer 40, a protective layer 50, a color filter layer 60, a filling layer 70, a sealing layer 80 and a transparent substrate 90 are sequentially stacked on a substrate 10 to form the display device 1.

[0033] The substrate 10 is a support that supports the light-emitting elements 100. The substrate 10 has, for example, a drive circuit 102 for each of the light-emitting elements 100. The substrate 10 may also have other circuits and wiring other than the drive circuits 102 (for example, a power supply circuit that supplies power to each of the light-emitting elements 100, a multi-layer wiring layer including various wirings), and the like.

[0034] The substrate 10 also has, for example, a pixel region R1a and a non-pixel region R1b. The pixel region R1a is a region where each light-emitting element 100 is present. This pixel region R1a functions as a light-emitting region. The non-pixel region R1b is a region outside the pixel region R1a. This non-pixel region R1b functions as a non-light-emitting region (non-light-emitting region). The pixel region R1a and non-pixel region R1b will be described in detail later.

[0035] The substrate 10 may be, for example, a glass substrate such as high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass; a semiconductor substrate such as single crystal silicon, amorphous silicon, or polycrystalline silicon; or a resin substrate such as polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate.

[0036] The anode layer 20 is provided on the substrate 10. The anode layer 20 has a plurality of anode electrodes 21. The anode electrode 21 is provided on the surface of the substrate 10 (the upper surface in FIG. 3 ) for each light-emitting element 100. For example, the anode electrode 21 may be formed from a metal material and function as a reflective layer that reflects light. In order to improve light extraction efficiency, it is preferable that the anode electrode 21 be made of a metal film that has as high a reflectivity as possible and a large work function. The anode layer 20 corresponds to a first electrode layer.

[0037] The anode electrode 21 may be formed of a metal film containing at least one of a simple substance or alloy of a metal element such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), or silver (Ag). Specific examples of alloys include aluminum (Al) alloys such as AlNi alloys or AlCu alloys, and silver (Ag) alloys such as MgAg alloys. The anode electrode 21 may also be formed of a transparent conductive film of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0038] The organic layer 30 is provided on the anode layer 20 and the substrate 10. This organic layer 30 includes at least a light-emitting layer and is configured to emit, for example, white light. Note that in the example of Fig. 3, the organic layer 30 is shown as a single layer, but in reality it is configured of multiple layers including the light-emitting layer. For example, the organic layer 30 may have a structure in which, from the anode layer 20 side, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer are stacked.

[0039] The cathode layer 40 is provided on the organic layer 30 and the substrate 10 so as to cover the organic layer 30. The cathode layer 40 is made of a material that is transparent to light emitted from the organic layer 30 and has conductivity (for example, a transparent conductive material or a semi-transparent conductive material). The cathode layer 40 functions as a cathode electrode. The cathode layer 40 corresponds to a second electrode layer.

[0040] The cathode layer (cathode electrode) 40 may be, for example, a metal film containing at least one of a simple substance or alloy of a metal element such as aluminum (Al), magnesium (Mg), calcium (Ca), sodium (Na), or silver (Ag). Specific examples of alloys include aluminum (Al) alloys such as MgAg alloys or AlLi alloys, and silver (Ag) alloys. The cathode layer 40 may also be formed from a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0041] Here, each of the light-emitting sections 101 is configured by sequentially stacking an organic layer 30 and a cathode layer 40 on an anode electrode 21. Light emitted by the organic layer 30 is emitted from the surface of the organic layer 30 facing the cathode layer 40. In the example of FIG. 3 , the surface of the upper surface of the cathode layer 40 (or the organic layer 30) facing the anode electrode 21 becomes the upper surface of the light-emitting section 101, and the upper surface of the light-emitting section 101 becomes the light-emitting surface from which the light-emitting section 101 emits light. The planar shape of the light-emitting surface of the light-emitting element 100 roughly follows the planar shape of the anode electrode 21.

[0042] The protective layer 50 is provided on the cathode layer 40 and the substrate 10 so as to cover the cathode layer 40. This protective layer 50 is a film that protects the anode layer 20, the organic layer 30, and the cathode layer 40 from external contamination. The protective layer 50 is formed, for example, from a material (for example, a transparent material) that is transparent to light generated in the organic layer 30.

[0043] For example, an organic insulating film such as a polyimide resin, an acrylic resin, or a novolac resin, or an inorganic insulating film such as silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide (SiO), or aluminum oxide (AlO), or a laminate film of these various insulating films can be used as the protective layer 50. Note that organic insulating films are more permeable to moisture than inorganic insulating films, so it is preferable to use an inorganic insulating film (inorganic insulating layer) as the protective layer 50.

[0044] The thickness of the protective layer 50 differs between the pixel region R1a and the non-pixel region R1b. For example, the thickness of the protective layer 50 in the non-pixel region R1b is thicker than the thickness of the protective layer 50 in the pixel region R1a. The thickness is the length in the stacking direction in FIG. 3. The thickness of the protective layer 50 in the pixel region R1a is the thickness of the protective layer 50 of the light-emitting element 100, i.e., the thickness of the protective layer 50 on the light-emitting section 101. In other words, it can be said that the thickness of the protective layer 50 in the non-pixel region R1b is thicker than the thickness of the protective layer 50 on the light-emitting section 101.

[0045] The color filter layer 60 is provided on the protective layer 50. The color filter layer 60 includes, for example, a color filter 60R for displaying red, a color filter 60G for displaying green, and a color filter 60B for displaying blue. In other words, the display device 1 has a light-emitting element 100 for displaying red, a light-emitting element 100 for displaying green, and a light-emitting element 100 for displaying blue.

[0046] The filling layer 70 is provided on the color filter layer 60. This filling layer 70 is provided between the color filter layer 60 and the transparent substrate 90. The filling layer 70 is formed, for example, from a material (for example, a transparent material) that is transparent to light that has passed through the color filter layer 60. For example, the same material as the protective layer 50 can be used as the filling layer 70.

[0047] The sealing layer 80 is provided on the protective layer 50. This sealing layer 80 is a layer for bonding the transparent substrate 90 to the protective layer 50. For example, an acrylic adhesive, an epoxy adhesive, a urethane adhesive, a silicone adhesive, a cyanoacrylate adhesive, a thermosetting adhesive, an ultraviolet curing adhesive, or the like can be used as the sealing layer 80.

[0048] The transparent substrate 90 is provided on the filling layer 70 and the sealing layer 80. This transparent substrate 90 protects the inside of the display device 1 from the external environment and, for example, prevents moisture, oxygen, and the like from entering the organic layer 30. The transparent substrate 90 is formed of, for example, a material that is transparent to light that has passed through the color filter layer 60 and has high gas barrier properties. For example, a transparent material such as glass can be used as this material.

[0049] The display device 1 may be provided with a lens layer. The lens layer is provided, for example, between the color filter layer 60 and the filling layer 70, but the location where the lens layer is provided is not particularly limited. The lens layer has a plurality of lenses. For example, a lens is provided for each light-emitting element 100. The lenses may have the same structure, and each lens may have a hemispherical shape. For example, a microlens (on-chip microlens) can be used as the lens.

[0050] <1-4. Example of Setting Regions of Display Device> An example of setting regions of the display device 1 according to this embodiment will be described with reference to Fig. 4. Fig. 4 is a diagram for explaining an example of setting regions of the display device 1 according to this embodiment. In the example of Fig. 4, a cross-sectional view of a part of the structure of the light-emitting element 100 and a plan view of the part of the structure are shown.

[0051] As shown in FIG. 4 , a layered region (pixel region R1a) and a non-layered region (non-pixel region R1b) of the anode layer 20 are defined. A layered region R2a and a non-layered region R2b of the organic layer 30 are defined. A layered region R3a and a non-layered region R3b of the cathode layer 40 are defined. A non-layered region (non-coated region) R4a and a layered region (coated region) R4b of the sealing layer 80 are defined. The layered region R4b is defined in the peripheral region of the protective layer 50. The peripheral region is, for example, an annular region having a predetermined width from the outer periphery of the protective layer 50 on the surface of the protective layer 50 (the upper surface of the protective layer 50 in FIG. 4 ).

[0052] The layered region (pixel region R1a), the layered regions R2a, R3a, and R4b, and the non-layered region (non-pixel region R1b), the non-layered regions R2b, R3b, and R4a are set, for example, with respect to the substrate 10. These regions R1a to R4a and R1b to R4b also act, for example, in the stacking direction in FIG. 4. Note that the term "layer" may be interchangeable with the term "film," and the non-layered region may be interchangeable with the term "non-layered region."

[0053] 4, the layering region (pixel region R1a) of the anode layer 20, the layering region R2a of the organic layer 30, and the layering region R3a of the cathode layer 40 are formed, for example, in a rectangular shape in a plan view. Also, the layering region (coating region) R4b of the sealing layer 80 is formed, for example, in a rectangular ring shape in a plan view.

[0054] Among the layering region (pixel region R1a) of the anode layer 20, the layering region R2a of the organic layer 30, and the layering region R3a of the cathode layer 40, the layering region (pixel region R1a) of the anode layer 20 has the smallest planar area, and the layering region R3a of the cathode layer 40 has the largest planar area (R1a<R2a<R3a).

[0055] <1-5. Examples of Display Device> Examples 1 to 8 of the display device 1 according to this embodiment will be described with reference to Fig. 5 to Fig. 14. Fig. 5 to Fig. 14 are diagrams for explaining examples (Examples 1 to 8) of the display device 1 according to this embodiment. In the examples of Fig. 5 to Fig. 14, cross-sectional views of a portion of the structure of the display device 1 are shown.

[0056] 5, the thickness of the protective layer 50 is different between the pixel region R1a and the non-pixel region R1b. That is, the protective layer 50 has a step portion 51 that generates a difference in layer thickness (film thickness difference). The step portion 51 has a recess 51a. A color filter layer 60 is provided on the bottom surface of the recess 51a (the upper surface of the protective layer 50).

[0057] The boundary of the difference in layer thickness of the protective layer 50 exists outside the protective layer 50 from the outer peripheral edge of the anode layer 20 (the right edge of the anode layer 20 in FIG. 5 ), i.e., in the non-pixel region R1b. Furthermore, the thickness of the protective layer 50 in the non-pixel region R1b is, for example, thicker than the thickness of the protective layer 50 in the pixel region R1a. Note that the thickness of at least a portion of the protective layer 50 in the non-pixel region R1b is thicker than the thickness of the protective layer 50 in the pixel region R1a.

[0058] 6, symbol H1 denotes the thickness (layer thickness) of the organic layer 30 and the cathode layer 40, symbol H2 denotes the thickness (layer thickness) of the protective layer 50 in the pixel region R1a, and symbol H3 denotes the thickness (layer thickness) of the protective layer 50 in the non-pixel region R1b. In this embodiment, at least the relationship H3 > H2 (H2 ≠ H3) holds. It is also desirable that the relationship H3 ≥ H1 + H2 hold.

[0059] As shown in Fig. 7, H1 to H3 are the same as those in Fig. 6. In the comparative example, the relation H3 = H2 holds true. That is, the protective layer 50 follows the unevenness of the underlying surface (see Fig. 7), and the thickness (layer thickness) of the protective layer 50 is constant (H3 = H2).

[0060] In the comparative example, the unevenness of the underlying layer (e.g., the organic layer 30, the cathode layer 40, etc.) before the protective layer 50 is formed is traced, and the protective layer 50 is formed on the underlying layer. Since the thickness of the actually formed protective layer 50 is constant, the thickness of the protective layer 50 in the pixel region R1a and the thickness of the protective layer 50 in the non-pixel region R1b are the same. However, due to the layer thickness distribution (film thickness distribution) caused by the process, a layer thickness difference of ±10% from the set layer thickness (film thickness) may occur. For example, a layer thickness distribution of ±100 nm may occur for a layer thickness of 1 μm.

[0061] In Example 1, for example, the difference in layer thickness is equal to or greater than the aforementioned layer thickness distribution, and the thickness of the protective layer 50 in the non-pixel region R1b is greater than the thickness of the protective layer 50 in the pixel region R1a. Furthermore, it is desirable that the thickness of the protective layer 50 in the non-pixel region R1b be equal to or greater than the sum of the thicknesses of the organic layer 30 and the cathode layer 40 and the thickness of the protective layer 50 in the pixel region R1a.

[0062] According to the first embodiment, a difference in thickness of the protective layer 50 exists in the non-pixel region R1b, and the thickness of the protective layer 50 in the non-pixel region R1b is greater than the thickness of the protective layer 50 in the pixel region R1a. This makes it possible to increase the thickness of the protective layer 50 while shortening the distance between the organic layer 30 and the color filter layer 60, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a and improving the reliability of the display device 1.

[0063] For example, even if a dent or foreign matter A1 (see FIG. 5) is transferred due to contact with a mask when forming the organic layer 30 or the cathode layer 40, it is possible to prevent moisture from entering from the outside via a defect originating from the dent or foreign matter A1, thereby ensuring reliability against defects. Note that, because the dent or foreign matter A1 is caused by contact with a mask or the like, the dent or foreign matter A1 is likely to occur in the peripheral region of the organic layer 30, the cathode layer 40, etc. (see FIG. 5).

[0064] The boundary of the thickness difference of the protective layer 50 may be located outside the outer circumferential edge of the anode layer 20 (the right end of the anode layer 20 in FIG. 5 ) and inside the outer circumferential edge of the organic layer 30 (the right end of the organic layer 30 in FIG. 5 ). The outer circumferential edge of the organic layer 30 is the boundary between the layered region R2a and the non-layered region R2b of the organic layer 30.

[0065] 8, the boundary of the difference in layer thickness of the protective layer 50 exists outside the protective layer 50 from the outer peripheral edge of the organic layer 30 (the right edge of the organic layer 30 in FIG. 8), i.e., in the non-layered region R2b of the organic layer 30. Furthermore, the thickness of the protective layer 50 in the non-layered region R2b of the organic layer 30 is, for example, thicker than the thickness of the protective layer 50 in the layered region R2a of the organic layer 30. Note that the thickness of a portion of the protective layer 50 in the non-layered region R2b of the organic layer 30 is thicker than the thickness of the protective layer 50 in at least the pixel region R1a.

[0066] According to Example 2, a difference in thickness of the protective layer 50 exists in the non-layered region R2b of the organic layer 30, and the thickness of the protective layer 50 in the non-layered region R2b of the organic layer 30 is greater than the thickness of the protective layer 50 in the layered region R2a of the organic layer 30. This makes it possible to increase the thickness of the protective layer 50 while shortening the distance between the organic layer 30 and the color filter layer 60, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a and improving the reliability of the display device 1.

[0067] For example, even if there is a dent or a foreign particle A1 (see Figure 8) transferred due to contact with a mask when forming the cathode layer 40, it is possible to prevent moisture from entering from the outside through defects originating from the dent or foreign particle A1, thereby ensuring reliability against defects.

[0068] The boundary of the thickness difference of the protective layer 50 may be located outside the outer periphery of the organic layer 30 (the right end of the organic layer 30 in FIG. 8 ) and inside the protective layer 50 of the outer periphery of the cathode layer 40 (the right end of the cathode layer 40 in FIG. 8 ). The outer periphery of the cathode layer 40 is the boundary between the layered region R3a and the non-layered region R3b of the cathode layer 40.

[0069] 9, the boundary of the difference in layer thickness of the protective layer 50 exists outside the protective layer 50 from the outer peripheral edge of the cathode layer 40 (the right edge of the cathode layer 40 in FIG. 9), i.e., in the non-layered region R3b of the cathode layer 40. Furthermore, the thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 is, for example, thicker than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40. Note that the thickness of a portion of the protective layer 50 in the non-layered region R3b of the cathode layer 40 is thicker than the thickness of the protective layer 50 in at least the pixel region R1a.

[0070] According to Example 3, the boundary of the thickness difference of the protective layer 50 exists within the non-layered region R3b of the cathode layer 40, and the thickness of the protective layer 50 within the non-layered region R3b of the cathode layer 40 is thicker than the thickness of the protective layer 50 within the layered region R3a of the cathode layer 40. This increases the penetration length of moisture A2 from the outer periphery of the display device 1 to the defect, thereby increasing the moisture diffusion time. Furthermore, by increasing the contact area between the filling layer 70 and the protective layer 50, the adhesion at the interface between the filling layer 70 and the protective layer 50 is improved, resulting in an increase in the moisture penetration time. Therefore, it is possible to reliably prevent non-light-emitting areas from occurring in the pixel region R1a, thereby improving the reliability of the display device 1.

[0071] The boundary of the thickness difference of the protective layer 50 may be located outside the outer circumferential edge of the cathode layer 40 (the right end of the cathode layer 40 in FIG. 9 ) and inside the inner circumferential edge of the sealing layer 80 (the left end of the sealing layer 80 in FIG. 9 ). The inner circumferential edge of the sealing layer 80 is the boundary between the non-layered region R4a and the layered region R4b of the sealing layer 80.

[0072] 10 , the boundary of the difference in layer thickness of the protective layer 50 is located outside the protective layer 50 relative to the inner circumferential edge of the sealing layer 80 (the left edge of the sealing layer 80 in FIG. 10 ), i.e., within the layered region R4b of the sealing layer 80. Furthermore, the thickness of the protective layer 50 within the layered region R4b of the sealing layer 80 is greater than the thickness of the protective layer 50 within the non-layered region R4a of the sealing layer 80, for example. Note that the thickness of a portion of the protective layer 50 within the layered region R4b of the sealing layer 80 is greater than the thickness of the protective layer 50 within at least the pixel region R1a.

[0073] According to Example 4, the boundary of the difference in layer thickness of the protective layer 50 exists within the layered region R4b of the sealing layer 80, and the thickness of the protective layer 50 within the layered region R4b of the sealing layer 80 is thicker than the thickness of the protective layer 50 within the non-layered region R4a of the sealing layer 80. This increases the penetration length of moisture A2 from the outer periphery of the display device 1 to the defect, thereby increasing the moisture diffusion time. Furthermore, by increasing the contact area between the sealing layer 80 and the protective layer 50, the adhesion at the interface between the sealing layer 80 and the protective layer 50 is improved, resulting in an increase in the moisture penetration time. Therefore, it is possible to reliably prevent non-light-emitting areas from occurring in the pixel region R1a, thereby improving the reliability of the display device 1.

[0074] 11, the step portion 51 of the protective layer 50 has a slope 51b. The slope 51b is formed, for example, in a ring shape in a plan view. That is, the step portion 51 is formed in a tapered shape.

[0075] In Example 5, similarly to Example 3 (see FIG. 9 ), the boundary of the thickness difference of the protective layer 50 exists in the non-layered region R3b of the cathode layer 40. The thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 is thicker than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40, for example.

[0076] According to Example 5, it is possible to obtain the same effect as in Example 3. Furthermore, by providing the slope 51b on the step portion 51, it becomes easier to uniformly apply material when forming the color filter layer 60, and therefore it is possible to suppress uneven application when forming the color filter layer 60.

[0077] 12, the step portion 51 of the protective layer 50 has an uneven portion 51c. The uneven portion 51c is configured, for example, by a plurality of recesses and a plurality of protrusions. The recesses and protrusions are repeatedly formed on the surface of the protective layer 50 (the upper surface in FIG. 12). The recesses and protrusions are formed, for example, in a rectangular ring shape in a plan view.

[0078] 12, the depth of each recess and the height of each protrusion are constant, the width of each recess is constant, and the width of each protrusion is different. However, the depth and width of each recess may be constant or different, and the height and width of each protrusion may be constant or different.

[0079] In Example 6, similarly to Example 4 (see FIG. 10 ), the boundary of the difference in layer thickness of the protective layer 50 exists within the layered region R4b of the sealing layer 80. The thickness of the protective layer 50 within the layered region R4b of the sealing layer 80 is, for example, thicker than the thickness of the protective layer 50 within the non-layered region R4a of the sealing layer 80.

[0080] According to Example 6, it is possible to obtain the same effect as Example 4. Note that according to Example 6, the penetration length and contact area are increased compared to Example 4, and therefore a higher effect can be obtained.

[0081] 13, the boundary of the difference in layer thickness of the protective layer 50 exists in the layered region R4b of the sealing layer 80, as in Example 4 (see FIG. 10). Moreover, the thickness of the protective layer 50 in the layered region R4b of the sealing layer 80 is thinner than the thickness of the protective layer 50 in the non-layered region R4a of the sealing layer 80, for example. Note that the thickness of a portion of the protective layer 50 in the layered region R4b of the sealing layer 80 is thinner than the thickness of the protective layer 50 in at least the pixel region R1a.

[0082] According to the seventh embodiment, the same effects as those of the fourth embodiment can be obtained.

[0083] Example 8 As shown in Figure 14, Example 8 combines Example 5 (see Figure 11), Example 6 (see Figure 12), and Example 7 (see Figure 13). That is, step portion 51 of protective layer 50 has sloped surface 51b and uneven portion 51c. For example, the thickness of protective layer 50 corresponding to sloped surface 51b and uneven portion 51c is thicker than the thickness of protective layer 50 in pixel region R1a, and the thickness of part of protective layer 50 in layering region R4b of sealing layer 80 is thinner than the thickness of protective layer 50 in pixel region R1a.

[0084] According to Example 8, it is possible to obtain the same effects as those of Example 5, Example 6, Example 7, etc. Note that according to Example 8, the penetration length and contact area are increased compared to those of Example 5, Example 6, and Example 7, and therefore a higher effect can be obtained.

[0085] <1-6. Example of Processes in a Method for Manufacturing a Display Device> Example of processes in a method for manufacturing a display device 1 according to this embodiment will be described with reference to Fig. 15 to Fig. 18. Each of Fig. 15 to Fig. 18 is a diagram for explaining example processes in a method for manufacturing a display device 1 according to this embodiment. In the examples of Fig. 15 to Fig. 18, cross-sectional views illustrating a part of the manufacturing process of the display device 1 are shown.

[0086] 15 , an anode layer 20, an organic layer 30, a cathode layer 40, and a protective layer 50 are sequentially stacked on a substrate 10. At this time, the anode layer 20 is formed on the substrate 10, positioned within the pixel region R1a. The protective layer 50 is stacked on the substrate 10 and the cathode layer 40 so as to cover the anode layer 20, the organic layer 30, and the cathode layer 40 on the substrate 10.

[0087] 16, a mask M1 patterned by photolithography is formed on the protective layer 50, and the protective layer 50 is etched. As a result, a step portion 51 is formed in the protective layer 50, as shown in Fig. 17. The boundary of the thickness difference of the protective layer 50 exists in the non-pixel region R1b, and the thickness of the protective layer 50 in the non-pixel region R1b is thicker than the thickness of the protective layer 50 in the pixel region R1a.

[0088] The mask M1 is formed, for example, by applying a photoresist onto the protective layer 50 and patterning the photoresist by exposure to light. At this time, the pattern, such as the position where the step portion 51 of the protective layer 50 is to be formed and the shape of the step portion 51, is formed, for example, by etching.

[0089] Next, the color filter layer 60 is laminated on the protective layer 50 (the bottom surface of the recess 51a of the step portion 51), and the sealing layer 80 is laminated on the peripheral region of the protective layer 50 (see FIG. 3). After that, the filling layer 70 is laminated on the color filter layer 60 and the protective layer 50, and the transparent substrate 90 is laminated on the filling layer 70 and the sealing layer 80 (see FIG. 3).

[0090] According to this manufacturing method, a step portion 51 is formed in the protective layer 50. More specifically, for a substrate 10 having a pixel region R1a and a non-pixel region R1b, a plurality of light-emitting portions 101 are provided in the pixel region R1a on the substrate 10 by the lamination process described above. Then, the protective layer 50 is provided across the pixel region R1a and the non-pixel region R1b so as to cover each light-emitting portion 101 on the substrate 10, and the step portion 51 is provided on the protective layer 50. Due to the presence of this step portion 51, the thickness of the protective layer 50 differs between the pixel region R1a and the non-pixel region R1b.

[0091] 15 to 17, the protective layer 50 is formed of a single layer, but as shown in FIG. 18, it may be formed of multiple layers 50a to 50f. The multiple layers 50a to 50f have, for example, a laminated structure of inorganic layers. Examples of inorganic layers that can be used include SiN, SiO, and AlO. The same type of inorganic layers may be laminated, or different types of inorganic layers may be laminated.

[0092] The protective layer 50 may be formed by, for example, a chemical vapor deposition (CVD) method. The layers 50a to 50f may be formed by, for example, a CVD method or an atomic layer deposition (ALD) method, or may be formed by both the CVD method and the ALD method.

[0093] The display device 1 according to the above embodiment can be manufactured using methods, devices, and conditions that are used in the manufacture of general semiconductor devices. That is, the display device 1 according to this embodiment can be manufactured using an existing method for manufacturing a semiconductor device.

[0094] In addition to CVD and ALD, other manufacturing methods such as PVD (Physical Vapor Deposition) can also be used. Examples of PVD methods include vacuum deposition, EB (Electron Beam) deposition, various sputtering methods (magnetron sputtering, RF (Radio Frequency)-DC (Direct Current) coupled bias sputtering, ECR (Electron Cyclotron Resonance) sputtering, facing target sputtering, and radio frequency sputtering), ion plating, laser ablation, MBE (Molecular Beam Epitaxy), and laser transfer. Examples of CVD methods include plasma CVD, thermal CVD, metal organic (MO) CVD, and photo-CVD. Other methods that can be used include electrolytic plating, electroless plating, various printing methods, and various coating methods. Furthermore, examples of the patterning method include chemical etching such as shadow masking, laser transfer, and photolithography, and physical etching using ultraviolet light or a laser.

[0095] <1-7. Examples of Planar Shape of Step Portion of Protective Layer> Examples of the planar shape of the step portion 51 of the protective layer 50 according to this embodiment will be described with reference to Fig. 19 to Fig. 22. Each of Fig. 19 to Fig. 22 is a diagram for explaining examples of the planar shape of the step portion 51 of the protective layer 50 according to this embodiment. The examples of Fig. 19 to Fig. 22 show plan views illustrating the planar shape of the step portion 51 of the protective layer 50.

[0096] 19, the planar shape (bottom shape) of the step portion 51 has a rectangle B1 and a rectangular ring B2. In the example of Fig. 19, in plan view, the rectangle B1 is located at the center of the protective layer 50, and the rectangular ring B2 is located so as to surround the periphery of the rectangle B1. The portion of the rectangle B1 is a recess 51a, and the portion of the rectangular ring B2 is an annular groove portion (recess) 51d.

[0097] 20, the planar shape (bottom shape) of the step portion 51 is an ellipse B3. In the example of Fig. 20, the ellipse B3 is located at the center of the protective layer 50 in plan view. The portion of the ellipse B3 is the recess 51a.

[0098] As shown in Figure 21, the planar shape (bottom shape) of the step portion 51 has a rectangle B1 and multiple extensions B4. In the example of Figure 21, there are four extensions B4. In a planar view, the rectangle B1 is located at the center of the protective layer 50, and each extension B4 extends linearly from the center of the long or short side of the rectangle B1 toward the outside. The portion of the rectangle B1 is a recess 51a, and each portion of each extension B4 is a groove (recess). Each individual portion of each extension B4 functions as an extension portion 52.

[0099] In the manufacturing process of the display device 1, when the filling layer 70 is laminated on the color filter layer 60 and the protective layer 50, the material of the filling layer 70 fills the recesses 51a of the stepped portions 51 of the protective layer 50. At this time, unnecessary material of the filling layer 70 (excess material that exceeds the specified amount) flows out from each extension portion 52. This makes it easier to manage the specified amount, thereby simplifying the manufacturing process.

[0100] In the example of Figure 21, when viewed in a plane, each of the stretched shapes B4 extends linearly from the center of the long or short side of the rectangle B1 toward the outside, but as shown in Figure 22, when viewed in a plane, each of the stretched shapes B4 may extend linearly from the four corners of the rectangle B1 toward the four corners of the protective layer 50.

[0101] The planar shape of the step portion 51 is not limited to the shapes shown in Figures 19 to 22, and may be, for example, a square rather than a rectangle B1 or an oval B3. The planar shape of the ring B2 may also be a shape other than a rectangle, and the shape of the elongated shape B4 may also be a shape other than a straight line, such as a rectangle. The number of rings B2 and the elongated shape B4 is not particularly limited. Furthermore, the position of the elongated shape B4 is not particularly limited.

[0102] <1-8. Actions and Effects> As described above, the display device 1, which is an example of a light-emitting device according to this embodiment, includes a substrate 10 having a pixel region R1a and a non-pixel region R1b, a plurality of light-emitting portions 101 provided in the pixel region R1a, a protective layer 50 provided across the pixel region R1a and the non-pixel region R1b so as to cover the light-emitting portions 101, and a color filter layer 60 provided on the protective layer 50. The thickness of the protective layer 50 differs between the pixel region R1a and the non-pixel region R1b (see, for example, Figures 3 to 5). This increases the penetration length of moisture A2 from the periphery of the display device 1 to the pixel region R1a or defects, thereby increasing the moisture diffusion time. Furthermore, by increasing the contact area between the protective layer 50 and a layer above the protective layer 50 (e.g., the filling layer 70 or the sealing layer 80), the adhesion at the interface between the protective layer 50 and the layer above the protective layer 50 is improved, thereby increasing the moisture penetration time. Therefore, it is possible to prevent non-light-emitting areas from occurring in the pixel region R1a, and the reliability of the display device 1 can be improved.

[0103] The protective layer 50 may also be an inorganic layer (see, for example, FIGS. 3 to 5 ). This makes it possible to more reliably prevent moisture from penetrating into the pixel region R1 a and defects, compared to when an organic layer is provided as the protective layer 50, and therefore makes it possible to reliably prevent non-light-emitting areas from occurring in the pixel region R1 a.

[0104] Furthermore, the boundary of the thickness difference of the protective layer 50 may be present within the non-pixel region R1b (see FIG. 5, etc.), which reliably prevents moisture from entering the pixel region R1a, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a.

[0105] Furthermore, the thickness of the protective layer 50 in the non-pixel region R1b may be thicker than the thickness of the protective layer 50 in the pixel region R1a (see, for example, FIG. 5 ). This allows the thickness of the protective layer 50 in the non-pixel region R1b to be thicker, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a.

[0106] Furthermore, the plurality of light-emitting portions 101 each include an anode layer 20, which is an example of a first electrode layer, provided on the pixel region R1 a, an organic layer 30, which is provided on the anode layer 20 and the non-pixel region R1 b, and a cathode layer 40, which is an example of a second electrode layer, provided on the organic layer 30 and the non-pixel region R1 b, and the boundary of the thickness difference of the protective layer 50 may be located outside the outer periphery of the organic layer 30 (see FIG. 8 ). This allows the boundary of the thickness difference of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1 a.

[0107] Furthermore, the thickness of the protective layer 50 in the non-layered region R2b of the organic layer 30 may be thicker than the thickness of the protective layer 50 in the layered region R2a of the organic layer 30 (see FIG. 8 ). This allows the thickness of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a.

[0108] Furthermore, the boundary of the thickness difference of the protective layer 50 may be located outside the outer periphery of the organic layer 30 and inside the outer periphery of the cathode layer 40 (see FIG. 8 ). This allows the boundary of the thickness difference of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1 a.

[0109] Furthermore, the boundary of the thickness difference of the protective layer 50 may be located outside the protective layer 50 relative to the outer peripheral edge of the cathode layer 40 (see FIG. 9 ). This allows the boundary of the thickness difference of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1 a.

[0110] Furthermore, the thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 may be thicker than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40 (see FIG. 9 ). This allows the thickness of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a.

[0111] The display device 1 further includes a sealing layer 80 provided in the peripheral region of the protective layer 50, and the boundary of the thickness difference of the protective layer 50 may be located outside the protective layer 50 relative to the outer circumferential edge of the cathode layer 40 and inside the protective layer 50 relative to the inner circumferential edge of the sealing layer 80 (see FIG. 9 ). This allows the boundary of the thickness difference of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1 a.

[0112] The display device 1 may further include a sealing layer 80 provided in the peripheral region of the protective layer 50, and the boundary of the thickness difference of the protective layer 50 may be located outside the protective layer 50 relative to the inner peripheral edge of the sealing layer 80 (see FIG. 10 ). This allows the boundary of the thickness difference of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1 a.

[0113] Furthermore, the thickness of the protective layer 50 in the layered region R4b of the sealing layer 80 may be thicker than the thickness of the protective layer 50 in the non-layered region R4a of the sealing layer 80 (see FIG. 10 ). This allows the thickness of the protective layer 50 to be appropriately set depending on, for example, the position where defects are likely to occur and the size of the defects, thereby reliably preventing non-light-emitting areas from occurring in the pixel region R1a.

[0114] Furthermore, the thickness of the protective layer 50 in the non-pixel region R1b may be thinner than the thickness of the protective layer 50 in the pixel region R1a (see FIG. 13 ). As described above, this increases the penetration length of moisture A2 from at least the periphery of the display device 1 to the pixel region R1a or defects, thereby increasing the moisture diffusion time and improving the adhesion at the interface between the protective layer 50 and the layer above the protective layer 50, thereby increasing the moisture penetration time. This makes it possible to prevent non-light-emitting areas from occurring in the pixel region R1a, thereby improving the reliability of the display device 1.

[0115] The protective layer 50 may also have a step portion 51 that creates a difference in layer thickness (see, for example, FIG. 5 ). This makes it possible to reliably prevent moisture from entering the pixel region R1 a or defects, thereby preventing non-light-emitting areas from occurring in the pixel region R1 a and improving the reliability of the display device 1 (see, for example, FIG. 5 ).

[0116] The step portion 51 may also have a slope 51b (see FIG. 11), which allows the step portion 51 to be formed reliably.

[0117] The step portion 51 may also have an uneven portion 51c (see FIG. 12), which allows the step portion 51 to be formed reliably.

[0118] The step portion 51 may have a recess 51a (see FIGS. 5, 19 to 22, etc.), which allows the step portion 51 to be formed reliably.

[0119] Furthermore, the step portion 51 may have an extension portion 52, which is a groove portion that connects to the aforementioned recess 51a (see FIGS. 21 and 22). As a result, when the material of the filling layer 70 is filled into the recess 51a of the step portion 51 of the protective layer 50 during the manufacturing process of the display device 1, unnecessary material of the filling layer 70 (excess material that exceeds the specified amount) flows out from each extension portion 52. This makes it easier to manage the specified amount, for example, and thus simplifies manufacturing.

[0120] <2. Modifications> <2-1. Configuration Examples of Resonator Structure> The pixel, which is the light-emitting element 100 used in the display device 1 according to the present embodiment described above, may have a resonator structure that resonates light generated in the light-emitting unit 101. Hereinafter, the resonator structure applied to each embodiment will be described with reference to the drawings. Note that, if necessary, one of RGB may be added to the reference numeral to distinguish between them (the same applies to the drawings).

[0121] (Resonator Structure: First Example) FIG. 23 is a schematic cross-sectional view for explaining a first example of a resonator structure.

[0122] In the first example, the first electrode 501 is formed to a common film thickness in each light-emitting element 500. The same is true for the second electrode 502. For example, the light-emitting element 500 corresponds to the above-described light-emitting element 100, the first electrode 501 corresponds to the above-described anode electrode 21, and the second electrode 502 corresponds to the above-described cathode layer 40 that functions as the cathode electrode. This is also true for the other examples.

[0123] A reflector 504 is disposed below a first electrode 501 of the light-emitting element 500, with an optical adjustment layer 503 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 505 is formed between the reflector 504 and the second electrode 502. For example, the organic layer 505 corresponds to the organic layer 30 described above.

[0124] The reflector 504 is formed to have a common film thickness for each light-emitting element 500. The film thickness of the optical adjustment layer 503 varies depending on the color to be displayed by the pixel. By having each of the optical adjustment layers 503R, 503G, and 503B have different film thicknesses, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0125] 23, the reflectors 504 of the light-emitting elements 500R, 500G, and 500B are arranged so that their upper surfaces are aligned. As described above, the film thickness of the optical adjustment layer 503 differs depending on the color to be displayed by the pixel, and therefore the position of the upper surface of the second electrode 502 differs depending on the type of light-emitting element 500 (each of the light-emitting elements 500R, 500G, and 500B).

[0126] The reflector 504 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing these as its main component.

[0127] The optical adjustment layer 503 can be made of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy), or an organic resin material such as an acrylic resin or a polyimide resin. The optical adjustment layer 503 may be a single layer or a laminated film made of a plurality of these materials. The number of layers may vary depending on the type of each light-emitting element 500.

[0128] The first electrode 501 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0129] The second electrode 502 needs to function as a semi-transmissive reflective film. The second electrode 502 can be formed using magnesium (Mg) or silver (Ag), a magnesium-silver alloy (MgAg) containing these as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0130] (Resonator Structure: Second Example) FIG. 24 is a schematic cross-sectional view for explaining a second example of the resonator structure.

[0131] In the second example as well, the first electrode 501 and the second electrode 502 are formed to have the same film thickness in each light emitting element 500 .

[0132] Also in the second example, a reflector 504 is disposed below the first electrode 501 of the light-emitting element 500, with an optical adjustment layer 503 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 505 is formed between the reflector 504 and the second electrode 502. As in the first example, the reflector 504 is formed to have the same film thickness in each light-emitting element 500, and the film thickness of the optical adjustment layer 503 differs depending on the color to be displayed by the pixel.

[0133] In the first example shown in Figure 23, the upper surfaces of the reflectors 504 of each light-emitting element 500R, 500G, and 500B are arranged to be aligned, and the position of the upper surface of the second electrode 502 differs depending on the type of light-emitting element 500.

[0134] 24 , the upper surfaces of the second electrodes 502 are aligned in the light-emitting elements 500R, 500G, and 500B. To align the upper surfaces of the second electrodes 502, the upper surfaces of the reflectors 504 in the light-emitting elements 500R, 500G, and 500B are positioned differently depending on the type of light-emitting element 500. Therefore, the lower surface of the reflector 504 (in other words, the upper surface of the base 506 shown in FIG. 24 ) has a stepped shape depending on the type of light-emitting element 500.

[0135] The materials constituting the reflector 504, the optical adjustment layer 503, the first electrode 501 and the second electrode 502 are the same as those described in the first example, and therefore description thereof will be omitted.

[0136] (Resonator Structure: Third Example) FIG. 25 is a schematic cross-sectional view for explaining a third example of the resonator structure.

[0137] In the third example, the first electrode 501 and the second electrode 502 are also formed to have the same film thickness in each light emitting element 500 .

[0138] Also in the third example, a reflector 504 is disposed below the first electrode 501 of the light-emitting element 500, with an optical adjustment layer 503 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 505 is formed between the reflector 504 and the second electrode 502. As in the first and second examples, the film thickness of the optical adjustment layer 503 varies depending on the color to be displayed by the pixel. As in the second example, the upper surface of the second electrode 502 is positioned so as to be aligned in each of the light-emitting elements 500R, 500G, and 500B.

[0139] In the second example shown in FIG. 24, in order to align the upper surface of the second electrode 502 , the lower surface of the reflector 504 has a stepped shape according to the type of light emitting element 500 .

[0140] 25, the film thickness of the reflector 504 is set to differ depending on the type of light-emitting element 500. More specifically, the film thickness is set so that the lower surfaces of the reflectors 504R, 504G, and 504B are aligned.

[0141] The materials constituting the reflector 504, the optical adjustment layer 503, the first electrode 501 and the second electrode 502 are the same as those described in the first example, and therefore description thereof will be omitted.

[0142] (Fourth Example of Resonator Structure) FIG. 26 is a schematic cross-sectional view for explaining a fourth example of the resonator structure.

[0143] 23 , the first electrodes 501 and second electrodes 502 of each light-emitting element 500 are formed to have the same film thickness. A reflector 504 is disposed below the first electrodes 501 of the light-emitting elements 500 with an optical adjustment layer 503 sandwiched therebetween.

[0144] In contrast to this, in the fourth example shown in FIG. 26, the optical adjustment layer 503 is omitted, and the film thickness of the first electrode 501 is set to differ depending on the type of the light emitting element 500 .

[0145] The reflector 504 is formed to have a common film thickness for each light-emitting element 500. The film thickness of the first electrode 501 varies depending on the color to be displayed by the pixel. By having each of the first electrodes 501R, 501G, and 501B have a different film thickness, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0146] The materials constituting the reflector 504, the optical adjustment layer 503, the first electrode 501 and the second electrode 502 are the same as those described in the first example, and therefore description thereof will be omitted.

[0147] (Resonator Structure: Fifth Example) FIG. 27 is a schematic cross-sectional view for explaining a fifth example of the resonator structure.

[0148] 23 , the first electrode 501 and the second electrode 502 are formed to have the same film thickness in each light-emitting element 500. A reflector 504 is disposed below the first electrode 501 of the light-emitting element 500 with an optical adjustment layer 503 sandwiched therebetween.

[0149] 27 , the optical adjustment layer 503 is omitted, and instead, an oxide film 507 is formed on the surface of the reflector 504. The thickness of the oxide film 507 is set to vary depending on the type of light-emitting element 500.

[0150] The thickness of the oxide film 507 varies depending on the color to be displayed by the pixel. By having each of the oxide films 507R, 507G, and 507B have a different thickness, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0151] The oxide film 507 is a film obtained by oxidizing the surface of the reflector 504, and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 507 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 504 and the second electrode 502.

[0152] The oxide film 507, whose thickness varies depending on the type of light-emitting element 500, can be formed, for example, as follows.

[0153] First, a container is filled with an electrolyte, and the substrate on which the reflector 504 is formed is immersed in the electrolyte. An electrode is also disposed so as to face the reflector 504.

[0154] Then, a positive voltage is applied to the reflector 504 with the electrode as a reference, and the reflector 504 is anodized. The thickness of the oxide film 507 formed by anodization is proportional to the voltage value applied to the electrode. Therefore, anodization is performed while applying a voltage corresponding to the type of light-emitting element 500 to each of the reflectors 504R, 504G, and 504B. This allows oxide films 507 with different thicknesses to be formed all at once.

[0155] The materials constituting the reflector 504, the first electrode 501 and the second electrode 502 are the same as those described in the first example, and therefore a description thereof will be omitted.

[0156] (Resonator Structure: Sixth Example) FIG. 28 is a schematic cross-sectional view for explaining a sixth example of the resonator structure.

[0157] In the sixth example, the light-emitting element 500 is configured by laminating a first electrode 501, an organic layer 505, and a second electrode 502. However, in the sixth example, the first electrode 501 is formed so as to function both as an electrode and a reflector. The first electrode (also serving as a reflector) 501 is formed of a material having an optical constant selected according to the type of light-emitting element 500. By varying the phase shift caused by the first electrode (also serving as a reflector) 501, it is possible to set an optical distance that generates optimal resonance for the wavelength of light according to the color to be displayed.

[0158] The first electrode (also serving as a reflector) 501 can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing any of these as a main component. For example, the first electrode (also serving as a reflector) 501R of the light-emitting element 500R can be made of copper (Cu), and the first electrode (also serving as a reflector) 501G of the light-emitting element 500G and the first electrode (also serving as a reflector) 501B of the light-emitting element 500B can be made of aluminum.

[0159] The material constituting the second electrode 502 is the same as that described in the first example, and therefore a description thereof will be omitted.

[0160] (Resonator Structure: Seventh Example) FIG. 29 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.

[0161] The seventh example is basically a configuration in which the sixth example is applied to the light-emitting elements 500R and 500G, and the first example is applied to the light-emitting element 500B. Even in this configuration, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0162] The first electrodes (which also serve as reflectors) 501R, 501G used in each light-emitting element 500R, 500G can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as the main component.

[0163] The materials constituting the reflector 504B, the optical adjustment layer 503B, and the first electrode 501B used in the light emitting element 500B are the same as those described in the first example, and therefore description thereof will be omitted.

[0164] 2-2. Configuration Examples of Shift Structure The pixel, which is the light-emitting element 100 used in the display device 1 according to the present embodiment described above, can be configured to include a shift structure that shifts any one of the light-emitting section (e.g., the light-emitting section 101), the lens member, and the wavelength selection section (e.g., the color filter layer 60). Hereinafter, the relationship between the normal line LN passing through the center of the light-emitting section, the normal line LN' passing through the center of the lens member, and the normal line LN" passing through the center of the wavelength selection section will be described with reference to FIGS. 30 to 36. FIGS. 30 to 36 are conceptual diagrams for explaining first to seventh examples of the shift structure, respectively.

[0165] The size of the wavelength selection section may be changed as appropriate in accordance with the light emitted by the light emitting element 100, or, if a light absorption layer (black matrix layer) is provided between the wavelength selection sections of adjacent light emitting elements 100, the size of the light absorption layer may be changed as appropriate in accordance with the light emitted by the light emitting element 100. In addition, the size of the wavelength selection section may be determined by the distance (offset amount) d between the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selection section. ０ The planar shape of the wavelength selection section may be the same as, similar to, or different from the planar shape of the lens member.

[0166] (Shift structure: first example) As shown in FIG. 30, a normal line LN passing through the center of the light emitting section, a normal line LN″ passing through the center of the wavelength selecting section, and a normal line LN′ passing through the center of the lens member are all coincident. That is, D ０ = d ０ =0.

[0167] (Shift structure: second example) As shown in FIG. 31, the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section coincide with each other, but the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section do not coincide with the normal line LN' passing through the center of the lens member. That is, D ０ ≠d ０ =0.

[0168] (Shift structure: third example) As shown in FIG. 32, the normal line LN passing through the center of the light emitting section, the normal line LN" passing through the center of the wavelength selecting section, and the normal line LN' passing through the center of the lens member do not coincide, but the normal line LN" passing through the center of the wavelength selecting section and the normal line LN' passing through the center of the lens member coincide. That is, D ０ = d ０ >0.

[0169] (Shift structure: fourth example) As shown in FIG. 33, a normal line LN passing through the center of the light emitting section does not coincide with a normal line LN" passing through the center of the wavelength selecting section and a normal line LN' passing through the center of the lens member, and a normal line LN' passing through the center of the lens member does not coincide with the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section. Here, it is preferable that the center of the wavelength selecting section (shown by a black square in FIG. 33) is located on a straight line LL connecting the center of the light emitting section and the center of the lens member (shown by a black circle in FIG. 33). Specifically, the distance from the center of the light emitting section to the center of the wavelength selecting section in the thickness direction is LL. １ , the distance from the center of the wavelength selection portion to the center of the lens member in the thickness direction is LL ２ When this is done, D ０ >d ０ >0, and taking into account manufacturing variations, d ０ :D ０ =LL １ : (LL １ +LL ２ ) is preferably satisfied.

[0170] (Shift structure: fifth example) As shown in FIG. 34, a normal line LN passing through the center of the light emitting section, a normal line LN″ passing through the center of the wavelength selecting section, and a normal line LN′ passing through the center of the lens member are coincident. That is, D ０= d ０ =0.

[0171] (Shift structure: Sixth example) As shown in FIG. 35, the normal line LN passing through the center of the light emitting section, the normal line LN" passing through the center of the wavelength selecting section, and the normal line LN' passing through the center of the lens member do not coincide, but the normal line LN" passing through the center of the wavelength selecting section and the normal line LN' passing through the center of the lens member coincide. That is, D ０ = d ０ >0.

[0172] (Shift structure: seventh example) As shown in FIG. 36, a normal line LN passing through the center of the light emitting section does not coincide with a normal line LN" passing through the center of the wavelength selecting section and a normal line LN' passing through the center of the lens member, and a normal line LN' passing through the center of the lens member does not coincide with the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section. Here, it is preferable that the center of the wavelength selecting section is located on a straight line LL connecting the center of the light emitting section and the center of the lens member. Specifically, the distance from the center of the light emitting section in the thickness direction to the center of the wavelength selecting section (shown by a black square in FIG. 36) is LL. １ , the distance from the center of the wavelength selection portion in the thickness direction to the center of the lens member (shown by a black circle in FIG. 36) is LL ２ When this is the case, d ０ >D ０ >0, and taking into account manufacturing variations, D ０ :d ０ =LL ２ : (LL １ +LL ２ ) is preferably satisfied.

[0173] 3. Other Embodiments The configurations according to the above-described embodiments (including examples and modifications) may be implemented in various different forms other than the above-described embodiments. For example, the configurations are not limited to the above-described examples, and may be implemented in various forms. Furthermore, for example, the configurations, processing procedures, specific names, and information including various data and parameters shown in the above documents and drawings may be changed as desired unless otherwise specified. Furthermore, the configurations according to the above-described embodiments (including examples and modifications) may be combined as appropriate. Furthermore, the effects of the above-described embodiments are merely examples and are not limited thereto, and other effects may also be achieved.

[0174] For example, the color filter may be configured to include a color material and / or particles that constitute quantum dots. Furthermore, the color filter may be configured using a known resist material to which a desired color material or the like has been added. Known pigments or dyes may be used as the color material. Furthermore, the particles that constitute the quantum dots are not particularly limited, and for example, luminescent semiconductor nanoparticles may be used. A color filter that includes a color material transmits light within a desired wavelength range from the light emitted by the light-emitting element 100, thereby displaying a color. Furthermore, a color filter that includes particles that constitute quantum dots displays a color by converting the wavelength of the light emitted by the light-emitting element 100.

[0175] Furthermore, various patterns such as a Bayer array (e.g., RGBG, GRGB, RGGB, etc.), an RGB array, an RGB stripe array, an RGB mosaic array, etc., can be used as the color filter array (color pattern), and various complementary color filters can be used in addition to the primary RGB color filters. Furthermore, the stacking position of each color filter (e.g., color filter layer 60) is not particularly limited as long as it is on the optical path of the light emitted from the light-emitting unit 101.

[0176] Furthermore, a suitable transparent organic material or inorganic material is appropriately selected and used as the material for the light-emitting element 100. The light-emitting element 100 can be obtained, for example, by forming a resist on a transparent material layer and then etching it.

[0177] In addition to organic electroluminescence elements, LED elements, semiconductor laser elements, and the like can also be used as the light-emitting unit 101. These elements are constructed using well-known materials and methods. From the viewpoint of constructing a flat display device, it is particularly preferable to configure the light-emitting unit 101 to include an organic electroluminescence element.

[0178] Furthermore, as described above, the light-emitting element 100 may be configured to have a resonator structure that resonates light. By providing the light-emitting element 100 with a resonator structure, the light emission color of the light-emitting element 100 can be set to a predetermined display color, so that a color filter is basically unnecessary. However, in order to further improve the color purity of light with a long wavelength, the display device 1 may be configured to further include a color filter corresponding to the light-emitting element 100 for displaying red, as described above. Alternatively, in order to improve the color purity of all display colors, the display device 1 may be configured to further include color filters corresponding to the light-emitting element 100 for displaying red, the light-emitting element 100 for displaying green, and the light-emitting element 100 for displaying blue.

[0179] The substrate 10 can be made of a semiconductor material, glass material, plastic material, or the like. When the drive circuit 102 is made up of transistors formed on a semiconductor substrate, for example, a well region can be provided in a semiconductor substrate made of silicon, and the transistors can be formed in the well. On the other hand, when the drive circuit 102 is made up of thin film transistors or the like, the drive circuit 102 can be formed by forming a semiconductor thin film on a substrate made of glass or plastic material. The various wirings can have well-known configurations and structures.

[0180] Furthermore, in the display device 1, there are no particular limitations on the configuration of the drive circuit 102 that controls the light emission of the light-emitting element 100. There are no particular limitations on the configuration of the transistors that make up the drive circuit 102, and they may be, for example, p-channel field effect transistors or n-channel field effect transistors.

[0181] Furthermore, in the display device 1, the light-emitting element 100 is configured as a so-called top-emitting type. For example, the light-emitting element 100 made of an organic electroluminescence element is configured by sandwiching an organic layer including a hole transport layer, a light-emitting layer, an electron transport layer, etc. between a first electrode and a second electrode. When the cathode is shared, the first electrode is an anode electrode and the second electrode is a cathode electrode. The first electrode is provided on the substrate 10 for each light-emitting element 100.

[0182] The first electrode may be formed of, for example, a simple substance or alloy of a metal having a high work function, such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), or tantalum (Ta). Alternatively, the first electrode may be formed as a laminated electrode in which a transparent conductive material, such as indium zinc oxide (IZO) or indium tin oxide (ITO), is laminated on a dielectric multilayer film or a thin film with high light reflectivity, such as aluminum.

[0183] The second electrode may be formed of a metal or alloy with a low work function, such as aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), an alloy of an alkali metal and silver, an alloy of an alkaline earth metal and silver, an alloy of magnesium and calcium, or an alloy of aluminum and lithium. The second electrode may also be formed of a transparent conductive material such as indium zinc oxide (IZO) or indium tin oxide (ITO), or may be formed as a laminated electrode of a layer made of the above-mentioned low work function material and a layer made of a transparent conductive material such as indium zinc oxide (IZO) or indium tin oxide (ITO).

[0184] The organic layer 30 is formed by laminating multiple material layers and is provided as a common continuous film on the entire surface, including the first electrode. The organic layer 30 emits light when a voltage is applied between the first electrode and the second electrode. The organic layer 30 has a structure in which, for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are laminated in this order from the first electrode side. The hole transport material, hole transport material, electron transport material, and organic light-emitting material that constitute the organic layer 30 are not limited, and well-known materials can be used.

[0185] The organic layer 30 may also include a structure in which multiple light-emitting layers are stacked. For example, a light-emitting element 100 that emits white light can be configured by stacking red-, blue-, and green-emitting light-emitting layers, or by stacking blue- and yellow-emitting light-emitting layers. The light-emitting element 100 that emits white light may be formed, for example, for each anode electrode and provided as an independent light-emitting element. The cathode layer 40 may not be common to each light-emitting element 100, but may be provided as a cathode electrode for each light-emitting element 100. A configuration in which the light-emitting layer is painted differently for each light-emitting element 100 depending on the color to be displayed may also be used.

[0186] Furthermore, a pixel may be composed of one light-emitting element 100 or a plurality of light-emitting elements 100. For example, a pixel may be composed of a plurality of sub-pixels. Specifically, a pixel may be composed of three types of sub-pixels: a red-display sub-pixel, a green-display sub-pixel, and a blue-display sub-pixel. A pixel may also be composed of a set of sub-pixels including one or more types of sub-pixels in addition to the three types of sub-pixels (for example, a set including a sub-pixel that emits white light to improve brightness, a set including a sub-pixel that emits a complementary color to expand the color reproduction range, a set including a sub-pixel that emits yellow to expand the color reproduction range, or a set including sub-pixels that emit yellow and cyan to expand the color reproduction range).

[0187] Furthermore, there may be a partition wall separating adjacent light emitting elements 100, and this partition wall may be formed using a material appropriately selected from known inorganic materials or organic materials. For example, the partition wall may be formed by a combination of a known film formation method, such as a physical vapor deposition method (PVD method) exemplified by a vacuum deposition method or a sputtering method, or various chemical vapor deposition methods (CVD methods), and a known patterning method, such as an etching method or a lift-off method.

[0188] In addition, the pixel values ​​of the display device 1 can be exemplified by several image display resolutions such as VGA (640,480), S-VGA (800,600), XGA (1024,768), APRC (1152,900), S-XGA (1280,1024), U-XGA (1600,1200), HD-TV (1920,1080), Q-XGA (2048,1536), as well as (1920,1035), (720,480), and (1280,960), but are not limited to these values.

[0189] 4. Application Examples The display device 1 according to the present embodiment described above can be used as a display unit of electronic devices in a variety of fields, which displays a video signal input to the electronic device or a video signal generated within the electronic device as an image or video. For example, the display device 1 according to the present embodiment can be used as a display unit of mobile terminal devices such as smartphones and mobile phones, digital still cameras, head-mounted displays, see-through head-mounted displays, television devices, notebook personal computers, video cameras, electronic books, game devices, and the like.

[0190] The display device 1 according to the present embodiment may include a sealed module. The display module may include a circuit section and a flexible printed circuit (FPC) for inputting and outputting signals from the outside to the light-emitting region.

[0191] Below, specific examples (application examples) of electronic devices using the display device 1 according to this embodiment include a smartphone 600, a digital still camera 650, a head-mounted display 700, a see-through head-mounted display 750, a television device 800, and a vehicle 900. However, the specific examples given here are merely examples, and the present invention is not limited to these.

[0192] 37 is a diagram showing an example of the appearance of a smartphone 600. As shown in Fig. 37, the smartphone 600 includes a display unit 601 that displays various information, and an operation unit 602 that includes buttons and the like that accept operation inputs by the user. The display unit 601 is configured by the display device 1 according to the above-described embodiment.

[0193] Specific Example 2 Figures 38 and 39 are diagrams each showing an example of the external appearance of a digital still camera 650. Figure 38 shows a front view of the digital still camera 650, and Figure 39 shows a rear view of the digital still camera 650. As shown in Figures 38 and 39, the digital still camera 650 is, for example, an interchangeable lens single-lens reflex type, and has an interchangeable taking lens unit (interchangeable lens) 652 located approximately in the center of the front of a camera main body (camera body) 651, and a grip part 653 for the photographer to hold on the left side of the front.

[0194] A monitor 654 is provided at a position shifted to the left from the center on the back of the camera body 651. An electronic viewfinder (eyepiece window) 655 is provided above the monitor 654. By looking through the electronic viewfinder 655, the photographer can visually confirm the optical image of the subject guided by the photographing lens unit 652 and determine the composition of the photograph. Either or both of the monitor 654 and the electronic viewfinder 655 are configured by the display device 1 according to the above-described embodiment.

[0195] Specific Example 3 Fig. 40 is a diagram showing an example of the appearance of a head-mounted display 700. As shown in Fig. 40, the head-mounted display 700 has, for example, ear hooks 702 for wearing on the user's head on both sides of a glasses-shaped display unit 701. The display unit 701 is configured by the display device 1 according to the above-described embodiment.

[0196] Specific Example 4 Fig. 41 is a diagram showing an example of the appearance of a see-through head mounted display 750. As shown in Fig. 41, the see-through head mounted display 750 is composed of a main body 751, an arm 752, and a lens barrel 753. The main body 751 is connected to the arm 752 and glasses 754. Specifically, an end of the long side of the main body 751 is coupled to the arm 752, and one side of the main body 751 is connected to the glasses 754 via a connecting member (not shown). Note that the main body 751 may also be worn directly on the head of a human body.

[0197] The main body 751 incorporates a control board and a display unit for controlling the operation of the see-through head mounted display 750. The arm 752 connects the main body 751 to the lens barrel 753 and supports the lens barrel 753. Specifically, the arm 752 is coupled to an end of the main body 751 and an end of the lens barrel 753, respectively, and fixes the lens barrel 753. The arm 752 also incorporates a signal line for communicating data related to images provided from the main body 751 to the lens barrel 753. The display unit of the main body 751 is configured by the display device 1 according to the above-described embodiment.

[0198] The lens barrel 753 projects image light provided from the main body 751 via the arm 752 through the lenses of the glasses 754 toward the eyes of the user wearing the see-through head-mounted display 750 .

[0199] Specific Example 5 Fig. 42 is a diagram showing an example of the appearance of a television device 800. As shown in Fig. 42, the television device 800 has an image display screen unit 801. The image display screen unit 801 includes, for example, a front panel 802 and a filter glass 803. The image display screen unit 801 is configured by the display device 1 according to the above-described embodiment.

[0200] Specific Example 6 Figures 43 and 44 are diagrams showing the internal configuration of a vehicle 900. Figure 43 shows the internal configuration of the vehicle 900 from the rear to the front, and Figure 44 shows the internal configuration of the vehicle 900 from diagonally rear to diagonally front.

[0201] 43 and 44, a vehicle 900 has a center display 951, a console display 952, a head-up display 953, a digital rearview mirror 954, a steering wheel display 955, and a rear entertainment display 956. Any or all of these displays 951 to 956 are configured by the display device 1 according to the above-described embodiment.

[0202] The center display 951 is disposed on the dashboard 904 in a position facing the driver's seat 901 and the passenger's seat 902. While FIGS. 43 and 44 show examples of horizontally elongated center displays 951 (951C, 951L, 951R) extending from the driver's seat 901 to the passenger's seat 902, the screen size and location of the center display 951 are arbitrary. The center display 951 can display information detected by various sensors. As a specific example, the center display 951 can display an image captured by an image sensor, a distance image to obstacles in front of or to the side of the vehicle measured by a ToF sensor, and the body temperature of a passenger detected by an infrared sensor. The center display 951 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information.

[0203] The safety-related information includes information such as detection of drowsiness, distraction, child mischief, whether a seatbelt is fastened, and whether a passenger has been abandoned. This information is detected, for example, by a sensor disposed on the rear side of the center display 951. The operation-related information is obtained by detecting gestures related to passenger operations using a sensor. The detected gestures may include operations of various equipment within the vehicle 900. For example, operations of the air conditioning system, navigation system, AV system, lighting system, etc. are detected. The life log includes life logs of all passengers. For example, the life log includes a record of each passenger's actions while on board. By acquiring and storing the life log, the condition of the passenger at the time of the accident can be confirmed. The health-related information is obtained by detecting the passenger's body temperature using a temperature sensor and inferring the passenger's health condition based on the detected body temperature. Alternatively, the passenger's face may be captured using an image sensor and the passenger's health condition may be inferred from the facial expression captured in the image. Furthermore, the passenger may be spoken to by an automated voice and the passenger's health condition may be inferred based on the passenger's responses. The authentication / identification-related information includes a keyless entry function that uses a sensor to perform facial authentication, a function that automatically adjusts the seat height and position by facial recognition, etc. The entertainment-related information includes a function that uses a sensor to detect operation information of an AV device by an occupant, a function that recognizes the occupant's face with a sensor and provides content suitable for the occupant via the AV device, etc.

[0204] The console display 952 can be used to display, for example, life log information. The console display 952 is disposed near the shift lever 907 on the center console 906 between the driver's seat 901 and the passenger seat 902. The console display 952 can also display information detected by various sensors. Furthermore, the console display 952 may display an image of the surroundings of the vehicle captured by an image sensor, or an image showing the distance to an obstacle around the vehicle.

[0205] The head-up display 953 is virtually displayed behind the windshield 903 in front of the driver's seat 901. The head-up display 953 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. Because the head-up display 953 is often virtually located in front of the driver's seat 901, it is suitable for displaying information directly related to the operation of the vehicle 900, such as the speed of the vehicle 900 and the remaining fuel (battery) level.

[0206] The digital rearview mirror 954 can not only display the rear of the vehicle 900 but also the status of passengers in the rear seats. Therefore, by placing a sensor on the back side of the digital rearview mirror 954, it can be used to display life log information, for example.

[0207] The steering wheel display 955 is disposed near the center of the steering wheel 905 of the vehicle 900. The steering wheel display 955 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 955 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, and for displaying information related to the operation of AV equipment, air conditioning equipment, etc.

[0208] The rear entertainment display 956 is attached to the back side of the driver's seat 901 and the passenger seat 902 and is intended for viewing by rear seat passengers. The rear entertainment display 956 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, since the rear entertainment display 956 is located directly in front of the rear seat passengers, information related to the rear seat passengers is displayed on the rear entertainment display 956. For example, the rear entertainment display 956 may display information related to the operation of an AV device or an air conditioning system, or may display the results of measuring the body temperature of the rear seat passengers using a temperature sensor.

[0209] As described above, by arranging a sensor on the rear side of the display, it is possible to measure the distance to surrounding objects. Optical distance measurement methods are broadly divided into passive and active types. Passive types measure distance by receiving light from an object without projecting light from the sensor onto the object. Passive types include the lens focusing method, the stereo method, and the monocular vision method. Active types measure distance by projecting light onto an object and receiving light reflected from the object with a sensor. Active types include the optical radar method, the active stereo method, the photometric stereo method, the moire topography method, and the interferometry method. The display device 1 according to the embodiment can be applied to any of these distance measurement methods. By using a sensor arranged on the rear side of the display device 1 according to the embodiment, the above-mentioned passive or active distance measurement can be performed.

[0210] Note that the electronic devices to which the display device 1 according to each embodiment can be applied are not limited to the above examples. The display device 1 according to each embodiment can be applied to the display unit of any electronic device that displays an image based on an externally input image signal or an internally generated image signal. In other words, the technology according to the present disclosure can be applied to a variety of products. For example, the display device 1 according to each embodiment may be implemented as a display unit of any type of moving object, such as the vehicle 900 described above, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, construction machinery, or agricultural machinery (tractor). Furthermore, for example, the display device 1 according to each embodiment may be applied to a display unit included in an endoscopic surgery system, a microsurgery system, or the like.

[0211] Although the embodiments, modifications, and application examples of the present disclosure have been described in detail above with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person skilled in the art of the present disclosure can conceive of various modified or altered examples within the scope of the technical idea described in the claims, and it is understood that these also naturally fall within the technical scope of the present disclosure.

[0212] <5. Supplementary Notes> The present technology may also be configured as follows. (1) A light-emitting device comprising: a substrate having a light-emitting region and a non-light-emitting region; a plurality of light-emitting sections provided in the light-emitting region; a protective layer provided across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections; and a color filter layer provided on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region. (2) The light-emitting device according to (1), wherein the protective layer is an inorganic layer. (3) The light-emitting device according to (1) or (2), wherein a boundary of the difference in layer thickness of the protective layer exists within the non-light-emitting region. (4) The light-emitting device according to any one of (1) to (3), wherein the thickness of the protective layer in the non-light-emitting region is thicker than the thickness of the protective layer in the light-emitting region. (5) The light-emitting device according to any one of (1) to (4), wherein the plurality of light-emitting sections include a first electrode layer provided on the light-emitting region, an organic layer provided on the first electrode layer and the non-light-emitting region, and a second electrode layer provided on the organic layer and the non-light-emitting region, and wherein a boundary of a difference in thickness of the protective layer exists outside the protective layer relative to an outer circumferential edge of the organic layer. (6) The light-emitting device according to (5), wherein a thickness of the protective layer in a non-layered region of the organic layer is thicker than a thickness of the protective layer in a layered region of the organic layer. (7) The light-emitting device according to (5) or (6), wherein a boundary of a difference in thickness of the protective layer exists inside the protective layer relative to an outer circumferential edge of the second electrode layer. (8) The light-emitting device according to (5) or (6), wherein a boundary of a difference in thickness of the protective layer exists outside the protective layer relative to an outer circumferential edge of the second electrode layer. (9) The light emitting device according to (8), wherein the thickness of the protective layer in a non-layered region of the second electrode layer is greater than the thickness of the protective layer in a layered region of the second electrode layer. (10) The light emitting device according to (8) or (9), further comprising a sealing layer provided in a peripheral region of the protective layer, wherein a boundary of a difference in layer thickness of the protective layer is located inside the protective layer with respect to an inner peripheral edge of the sealing layer.(11) The light-emitting device according to (5) or (6), further comprising a sealing layer provided in a peripheral region of the protective layer, wherein a boundary of a thickness difference of the protective layer is located outside the protective layer relative to an inner peripheral edge of the sealing layer. (12) The light-emitting device according to (11), wherein the thickness of the protective layer in the layered region of the sealing layer is thicker than the thickness of the protective layer in the non-layered region of the sealing layer. (13) The light-emitting device according to any one of (1) to (3), wherein the thickness of the protective layer in the non-light-emitting region is thinner than the thickness of the protective layer in the light-emitting region. (14) The light-emitting device according to any one of (1) to (13), wherein the protective layer has a step portion that generates a thickness difference. (15) The light-emitting device according to (14), wherein the step portion has a slope. (16) The light-emitting device according to (14) or (15), wherein the step portion has an uneven portion. (17) The light-emitting device according to any one of (14) to (16), wherein the step portion has a recess. (18) The light-emitting device according to (17), wherein the step portion has an extending portion that connects to the recess. (19) An electronic device comprising a light-emitting device, the light-emitting device having: a substrate having a light-emitting region and a non-light-emitting region; a plurality of light-emitting portions provided in the light-emitting region; a protective layer provided across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting portions; and a color filter layer provided on the protective layer, wherein the protective layer has a thickness different between the light-emitting region and the non-light-emitting region. (20) A method for manufacturing a light-emitting device, comprising: providing a plurality of light-emitting portions in the light-emitting region on a substrate having a light-emitting region and a non-light-emitting region; providing a protective layer across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting portions; and providing a color filter layer on the protective layer, wherein the protective layer has a thickness different between the light-emitting region and the non-light-emitting region. (21) An electronic device comprising the light emitting device according to any one of (1) to (18). (22) A method for manufacturing a light emitting device, the method comprising manufacturing the light emitting device according to any one of (1) to (18).

[0213] REFERENCE SIGNS LIST 1 display device 10 substrate 11 horizontal drive circuit 12 vertical drive circuit 20 anode layer 21 anode electrode 30 organic layer 40 cathode layer 50 protective layer 50a layer 50b layer 50c layer 50d layer 50e layer 50f layer 51 step portion 51a recess 51b slope 51c uneven portion 51d groove portion 52 extension portion 60 color filter layer 60B color filter 60G color filter 60R color filter 70 filling layer 80 sealing layer 90 transparent substrate 100 light emitting element 101 light emitting portion 102 drive circuit R1a pixel region R1b non-pixel region R2a layered region R2b non-layered region R3a layered region R3b Non-stratified area R4a Non-stratified area R4b Stratified area A1 Foreign matter A2 Moisture B1 Rectangle B2 Ring B3 Oval B4 Stretched M1 Mask

Claims

1. A light-emitting device comprising: a substrate having a light-emitting region and a non-light-emitting region; a plurality of light-emitting sections provided in the light-emitting region; a protective layer provided across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections; and a color filter layer provided on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region.

2. The light emitting device according to claim 1, wherein the protective layer is an inorganic layer.

3. The light emitting device according to claim 1, wherein a boundary of the thickness difference of the protective layer exists within the non-light emitting region.

4. The light emitting device according to claim 1, wherein the thickness of the protective layer in the non-light emitting region is greater than the thickness of the protective layer in the light emitting region.

5. The light-emitting device described in claim 1, wherein the plurality of light-emitting sections have a first electrode layer provided on the light-emitting region, an organic layer provided on the first electrode layer and the non-light-emitting region, and a second electrode layer provided on the organic layer and the non-light-emitting region, and a boundary of the layer thickness difference of the protective layer is present outside the protective layer relative to the outer circumferential edge of the organic layer.

6. The light-emitting device according to claim 5, wherein a thickness of said protective layer in an unlayered region of said organic layer is greater than a thickness of said protective layer in an layered region of said organic layer.

7. The light emitting device according to claim 5, wherein a boundary of the thickness difference of the protective layer is present inside the protective layer with respect to an outer peripheral edge of the second electrode layer.

8. The light emitting device according to claim 5, wherein a boundary of the thickness difference of the protective layer is present outside the protective layer relative to an outer peripheral edge of the second electrode layer.

9. The light emitting device according to claim 8, wherein a thickness of the protective layer in a non-layered region of the second electrode layer is greater than a thickness of the protective layer in a layered region of the second electrode layer.

10. The light emitting device according to claim 8, further comprising a sealing layer provided in a peripheral region of the protective layer, wherein a boundary of a thickness difference of the protective layer is located inside the protective layer relative to an inner peripheral edge of the sealing layer.

11. The light emitting device according to claim 5, further comprising a sealing layer provided in a peripheral region of the protective layer, wherein a boundary of a thickness difference of the protective layer is present outside the protective layer relative to an inner peripheral end of the sealing layer.

12. The light emitting device according to claim 11, wherein the thickness of the protective layer in the laminated region of the sealing layer is greater than the thickness of the protective layer in the non-laminated region of the sealing layer.

13. The light emitting device according to claim 1, wherein the thickness of the protective layer in the non-light emitting region is thinner than the thickness of the protective layer in the light emitting region.

14. The light emitting device according to claim 1, wherein the protective layer has a step portion that creates a layer thickness difference.

15. The light emitting device according to claim 14, wherein the step portion has a slope.

16. The light emitting device according to claim 14, wherein the step portion has an uneven portion.

17. The light emitting device according to claim 14, wherein the step portion has a recess.

18. The light emitting device according to claim 17, wherein the step portion has an extension portion that connects to the recess portion.

19. An electronic device comprising a light-emitting device, the light-emitting device having: a substrate having a light-emitting region and a non-light-emitting region; a plurality of light-emitting sections provided in the light-emitting region; a protective layer provided across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections; and a color filter layer provided on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region.

20. A method for manufacturing a light-emitting device, comprising: providing a plurality of light-emitting sections in a light-emitting region on a substrate having a light-emitting region and a non-light-emitting region; providing a protective layer across the light-emitting region and the non-light-emitting region so as to cover the plurality of light-emitting sections; and providing a color filter layer on the protective layer, wherein the thickness of the protective layer differs between the light-emitting region and the non-light-emitting region.

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