Radio-frequency power amplifier module, manufacturing method, antenna transceiving module, and base station

Abstract

The embodiments of the present application relate to the technical field of communication devices. Provided are a radio-frequency power amplifier module, a manufacturing method, an antenna transceiving module, and a base station. The radio-frequency power amplifier module comprises: a first substrate; and a power amplification component and an isolation component which are provided on the substrate, wherein the power amplification component is electrically connected to the isolation component by means of the first substrate, and the isolation component comprises a ferrite element and a first region of the first substrate, the ferrite element being provided in the first region of the first substrate. The embodiments of the present application can effectively reduce the cost of a radio-frequency power amplifier module, and also reduce an insertion loss between a power amplification component and an isolation component while reducing the area of the radio-frequency power amplifier module, thereby improving the transmission efficiency of a transmitting path.

Description

A radio frequency power amplifier module, manufacturing method, antenna transceiver module and base station

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office on September 28, 2023, with application number 202311283647.5 and application name “A radio frequency power amplifier module, manufacturing method, antenna transceiver module and base station”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of communication equipment, and in particular to a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station. Background Art

[0003] With the development of mobile communication technology, Massive Multiple-Input Multiple-Output (Massive MIMO) systems are often used to ensure base station coverage. Therefore, a large number of RF power amplifier modules are required in Massive MIMO systems. However, existing RF power amplifier modules cannot meet the requirements of miniaturization and low cost.

[0004] Summary of the Invention

[0005] The embodiments of the present application provide a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station, which can reduce the area of ​​the radio frequency power amplifier module while saving costs and improving the transmission efficiency of the transmission path.

[0006] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0007] In a first aspect, a radio frequency power amplifier module is provided. The radio frequency power amplifier module includes: a first substrate; a power amplifier component and an isolation component disposed on the first substrate; the power amplifier component is electrically connected to the isolation component via the first substrate; wherein the isolation component includes a ferrite element and a first region of the first substrate, and the ferrite element is disposed in the first region of the first substrate.

[0008] In the implementation of the present application, the RF power amplifier module directly sets the ferrite element in the isolation component in the first area of ​​the first substrate. A first connecting circuit can be set in the first area of ​​the first substrate, and is electrically connected to the rest of the isolation component through the first connecting circuit, for example, is connected to the ferrite element through the first connecting circuit. That is, the first substrate is used to replace the supporting substrate set when the isolation component is a discrete device, which can effectively reduce the cost of the RF power amplifier module. At the same time, there is no need to consider the packaging avoidance problem of the isolation component, so that the routing distance between the isolation component and the power amplification component can be shortened. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplification component and the isolation component is reduced, thereby improving the transmission efficiency of the transmission path.

[0009] In some possible implementations, the power amplifying component includes a power amplifying chip and a second region of the first substrate, and the power amplifying chip is disposed in the second region of the first substrate.

[0010] In this implementation, the power amplification component includes a power amplification chip and a second area of ​​the first substrate. The power amplification chip is arranged in the second area of ​​the first substrate. A second connection circuit can be set in the second area of ​​the first substrate, and the power amplification component is electrically connected to the isolation component through the second connection circuit. That is, the first substrate replaces the packaging substrate set when the power amplification component is a discrete device, so the cost of the RF power amplifier module can be effectively reduced. At the same time, the power amplification component and the isolation component can be integrated into one on the first substrate without considering the packaging avoidance problem of the power amplification component and the isolation component, thereby further shortening the routing distance between the isolation component and the power amplification component. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplification component and the isolation component is reduced, and the transmission efficiency of the transmission path is improved.

[0011] In some possible implementations, the isolation component further includes a dielectric unit having an annular structure and nested around the ferrite element. The dielectric unit can optimize the magnetic circuit.

[0012] In some possible implementations, the isolation component further includes a magnetic element, which is disposed on one side of the ferrite element. The projection of the magnetic element on the first substrate at least partially overlaps with the projection of the ferrite element on the first substrate. The magnetic element is used to provide a magnetic field so that the input radio frequency signal can only flow in a specific direction.

[0013] In some possible implementations, the RF power amplifier module also includes a second substrate, which is located on a side of the first substrate away from the power amplification component. The second substrate is electrically connected to the first substrate, and the performance of the second substrate may be lower than that of the first substrate, thereby reducing the cost of the RF power amplifier module.

[0014] In some possible implementations, the RF power amplifier module further includes a heat dissipation layer, which is located on a side of the first substrate away from the power amplification component to assist the power amplification component in dissipating heat.

[0015] In some possible implementations, the RF power amplifier module further includes a heat dissipation layer, which is located on a side of the power amplification component away from the first substrate to assist the power amplification component in dissipating heat.

[0016] In some possible implementations, the magnetic element is embedded in the second substrate.

[0017] In some possible implementations, the magnetic element is embedded in the heat dissipation layer.

[0018] In some possible implementations, the magnetic element is embedded in the first substrate and disposed on a side of the ferrite element close to the first substrate.

[0019] In some possible implementations, the ferrite element and the power amplification component are disposed on the first substrate and are located on the same side of the first substrate.

[0020] In some possible implementations, the ferrite element is embedded in the first substrate.

[0021] In some possible implementations, the ferrite element is embedded in the first substrate, and a coating layer is provided on the ferrite element.

[0022] In some possible implementations, the power amplification component also includes an input matching circuit and an output matching circuit; the input matching circuit and the output matching circuit are arranged in the second area of ​​the first substrate, the input end of the power amplification chip is electrically connected to the input matching circuit, and the output end of the power amplification chip is electrically connected to the output matching circuit.

[0023] In some possible implementations, the power amplifier component includes a power amplifier chip, an input matching circuit, an output matching circuit and a packaging substrate. The power amplifier chip, the input matching circuit and the output matching circuit are arranged on the packaging substrate. The input end of the power amplifier chip is electrically connected to the input matching circuit, and the output end of the power amplifier chip is electrically connected to the output matching circuit.

[0024] In a second aspect, a method for manufacturing a radio frequency power amplifier module is provided. The method comprises: separately forming a first substrate, a power amplifier component, and an isolation component; wherein the first substrate includes a first region; the isolation component includes a ferrite element disposed in the first region of the first substrate; and electrically connecting the power amplifier component to the first substrate.

[0025] In a third aspect, an antenna transceiver module is provided. The antenna transceiver module includes a receiving path, a transmitting path, and an antenna, wherein the transmitting path is electrically connected to the receiving path and the antenna, respectively, wherein the transmitting path includes the RF power amplifier module provided in the first aspect.

[0026] In a fourth aspect, a base station is provided, comprising a baseband processing unit, a digital-to-analog conversion unit, and at least one antenna transceiver module provided in the third aspect, wherein the baseband processing unit is connected to the antenna transceiver module via the digital-to-analog conversion unit.

[0027] Among them, the technical effects brought about by any possible implementation method of the second to fourth aspects can refer to the technical effects brought about by the different implementation methods of the above-mentioned first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0029] FIG1 is a schematic diagram of the structure of a base station provided in some embodiments of the present application;

[0030] FIG2 is a circuit diagram of an antenna transceiver module in a base station provided by some embodiments of the present application;

[0031] FIG3 is a schematic structural diagram of a radio frequency power amplifier module provided in some embodiments of the present application;

[0032] FIG4 is a schematic structural diagram of an isolation element provided in some embodiments of the present application;

[0033] FIG5 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0034] FIG6 is a schematic diagram of the three-dimensional structure of a radio frequency power amplifier module provided in some embodiments of the present application;

[0035] FIG7 is a flow chart of a method for manufacturing a radio frequency power amplifier module according to some embodiments of the present application;

[0036] FIG8 is a schematic structural diagram of an isolation element provided in some embodiments of the present application;

[0037] FIG9 is a schematic structural diagram of an isolation element provided in some embodiments of the present application;

[0038] FIG10 is a schematic structural diagram of a radio frequency power amplifier module provided in some embodiments of the present application;

[0039] FIG11 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0040] FIG12 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0041] FIG13 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0042] FIG14 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0043] FIG15 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0044] FIG16 is a schematic structural diagram of a radio frequency power amplifier module provided in other embodiments of the present application;

[0045] FIG17 is a schematic structural diagram of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0046] FIG18 is a schematic structural diagram of a radio frequency power amplifier module provided in other embodiments of the present application;

[0047] FIG19 is a circuit diagram of an antenna transceiver module provided in some embodiments of the present application;

[0048] Figure 20 is a schematic diagram of the structure of a base station provided in some embodiments of the present application. DETAILED DESCRIPTION

[0049] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments.

[0050] In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more of the features.

[0051] In the embodiments of the present application, the term “connect” refers to coupling, which includes being directly connected or being indirectly connected via other devices to achieve electrical communication.

[0052] A base station is a radio transmitter and receiver that transmits information to and from user devices via a mobile communications exchange center within a specific radio coverage area. With the development of mobile communications technology, radio transmission speeds have increased, but as signal frequencies increase, so too does loss, resulting in a weaker base station coverage capability.

[0053] In order to ensure the coverage capability of the base station, the base station needs to adopt a massive multiple in multiple out (Massive MIMO) antenna transceiver system to obtain beamforming gain and improve the coverage capability of the base station. Figure 1 is a schematic diagram of the structure of the base station provided by some embodiments of the present application. The base station 100 includes a baseband processing unit 20, a digital-to-analog conversion unit 30 and a multiple-input multiple-output antenna transceiver system 10. The digital-to-analog conversion unit 30 is used to convert the digital baseband signal sent by the baseband processing unit 20 into a small radio frequency signal and send it to the multiple-input multiple-output antenna transceiver system 10. The multiple-input multiple-output antenna transceiver system 10 is used to amplify the small radio frequency signal into a radio frequency signal and send it to other base stations or user equipment; the multiple-input multiple-output antenna transceiver system 10 is also used to receive radio frequency signals sent by other base stations or user equipment, and send the received radio frequency signals to the digital-to-analog conversion unit 30. The digital-to-analog conversion unit 30 is also used to convert the radio frequency signal into a digital signal and send it to the baseband processing unit 20 for processing. The multi-input multi-output antenna transceiver system 10 includes multiple antenna transceiver modules 11. As shown in FIG2 , the antenna transceiver module 11 includes a transmitting path 12, a receiving path 13, and an antenna 14. The transmitting path 12 is connected to the receiving path 13 and the antenna 14, respectively. The transmitting path 12 includes a driving circuit 101, a power amplifier component 110, an isolation component 120, and a filtering component 102. Exemplarily, the isolation component 120 can be a circulator (Cir) or an isolator (Iso). The isolation component 120 is a three-terminal device, wherein a first port of the isolation component 120 is electrically connected to the power amplifier component 110, a second port of the isolation component 120 is electrically connected to the filtering component 102, and a third port of the isolation component 120 is electrically connected to the receiving path 13.

[0054] The small RF signal is amplified step by step into an RF signal by the driving circuit 101 and the power amplifier component 110 to ensure that the RF signal level meets the preset power level value. The amplified RF signal has the characteristics of high power, high efficiency, and low distortion to achieve the best transmission effect. The isolation component 120 plays an isolation role to prevent the interference signal reflected from the load end such as the filter component 102 and the antenna 14 from affecting the performance of the power amplifier component 110. At the same time, it can also reduce the impact of the reflected signal on the digital pre-distortion (DPD) forward correction signal. Finally, since there are some unnecessary harmonics in the output of the power amplifier component 110, it is necessary to filter them out by the filter component 102. Therefore, the RF signal is transmitted by the antenna 14 after passing through the filter component 102 in the forward direction to avoid interference with surrounding devices.

[0055] In some optional examples, the power amplification component 110 and the isolation component 120 can be regarded as an RF power amplifier module. See the structural schematic diagram of the RF power amplifier module shown in Figure 3. The RF power amplifier module is divided into a metal substrate type power amplifier module, a castle type power amplifier module and a flip-chip type power amplifier module.

[0056] The metal substrate power amplifier module shown in (a) of FIG3 further includes a heat dissipation layer 132 and a first substrate 130 disposed on the heat dissipation layer 132. Exemplarily, the heat dissipation layer 132 is a heat sink (HS), and the first substrate 130 is a power amplifier board (PA Board). The power amplifier component 110 and the isolation component 120 are discrete devices, which are then assembled on the first substrate 130 using surface mount technology (SMT). A radio frequency matching circuit is formed in the first substrate 130. The radio frequency matching circuit is used to match the impedance of the output end of the power amplifier component 110 with the input end of the isolation component 120. The radio frequency matching circuit electrically connects the power amplifier component 110 and the isolation component 120, thereby forming a radio frequency power amplifier module.

[0057] It can be understood that the use of discrete devices for the power amplifying component 110 and the isolation component 120 means that the power amplifying component 110 and the isolation component 120 are electronic devices that are independently manufactured and used. They are electronic devices that implement specific functions through a single physical component rather than being integrated on a chip.

[0058] In some optional examples, the power amplifying component 110 includes an input matching circuit 112, a power amplifying chip 115, an output matching circuit 117, and a flange structure 119. The input matching circuit 112, the power amplifying chip 115, and the output matching circuit 117 can be integrated on the flange structure 119. The input end of the power amplifying chip 115 is electrically connected to the input matching circuit 112, and the output end of the power amplifying chip 115 is electrically connected to the output matching circuit 117. Accordingly, a hollow portion is provided on the first substrate 130 to allow the flange structure 119 of the power amplifying component to be embedded in the first substrate 130. Heat energy generated by the power amplifying chip 115 is directly transferred to the heat dissipation layer 132 through the flange structure 119. It is understood that the power amplifying component 110 may also include a packaging substrate, to which the input matching circuit 112 and the output matching circuit 117 are electrically connected, so that the power amplifying component 110 can be used independently.

[0059] Referring to the structural schematic diagram of the isolation component shown in FIG4 , the isolation component 120 includes a stacked support substrate 121, a uniform magnetic element 122, a ferrite element 123, a ceramic element 124, and a magnetic element 125. A conductive structure is provided in the support substrate 121 for connecting the remaining components of the isolation component 120. At the same time, the conductive structure can realize signal transmission and coupling, so that the isolation component 120 can complete its directional coupling function. The uniform magnetic element 122 creates a uniform magnetic field inside the isolation component 120 to ensure the performance and stability of the isolation component 120. The ferrite element 123 serves as the magnetic core in the isolation component 120, which can effectively concentrate, focus, and guide the magnetic field to other parts of the isolation component 120 to achieve directional coupling and transmission of signals. The ceramic element 124 can enhance the performance of the isolation component 120, and the magnetic element 125 is used to form a magnetic field inside the isolation component 120.

[0060] Because a radio frequency matching circuit needs to be formed within the first substrate 130, the first substrate 130 must be made of a material with excellent high-frequency performance, such as high-frequency glass fiber reinforced polymer (FR-4) or polytetrafluoroethylene (PTFE). These materials have low dielectric loss and good insulation properties, which can reduce signal attenuation and crosstalk, but they are relatively expensive. Therefore, the castle-type power amplifier module shown in FIG3 (2) is based on the metal substrate-type power amplifier module shown in FIG3 (1), but further includes a second substrate 140 disposed between the heat dissipation layer 132 and the first substrate 130. Exemplarily, the second substrate 140 is a transceiver printed circuit board (TRX PCB). Therefore, the radio frequency matching circuit can be formed on the first substrate 130, while other circuits, such as the intermediate frequency circuit and the modulation and demodulation circuit, can be formed on the second substrate 140. The area of ​​the first substrate 130 in the castle-type power amplifier module is smaller than that of the first substrate 130 in the metal substrate-type power amplifier module, thereby reducing costs.

[0061] In order to further reduce the volume of the RF power amplifier module, the flip-chip power amplifier module shown in (three) of Figure 3 includes a heat dissipation layer 132, and a first substrate 130, a third substrate 145 and a second substrate 140 stacked on the heat dissipation layer 132, wherein a power amplification component 110 is arranged on the first substrate 130. Since the first substrate 130 and the third substrate 145 are electrically isolated, a conductive structure 146 is also provided between the first substrate 130 and the third substrate so that the first substrate 130 and the third substrate 145 are electrically connected. The isolation component 120 is arranged on the third substrate 145 and on the side of the third substrate 145 close to the first substrate 130. The projection of the isolation component 120 on the first substrate 130 does not overlap with the projection of the power amplification component 110 on the first substrate 130.

[0062] The above three types of RF power amplifier modules all first match the output of the power amplifier component 110 to 50ohm impedance or a specific impedance value near 50ohm, and match the impedance of the first port of the isolation component 120 according to the output impedance of the power amplifier component 110 to ensure that the cascade standing wave is as small as possible, thereby achieving lossless or low-loss transmission of RF power. The reflected signal is isolated through the second port of the isolation component 120 to prevent the reflected signal from affecting the performance of the power amplifier component 110.

[0063] However, the above three types of RF power amplifier modules have the following problems: (1) The layout area of ​​the first substrate 130 is large, and the packaging avoidance between the power amplifier component 110 and the isolation component 120 will occupy a certain area, which is not conducive to miniaturization; (2) The insertion loss of the wiring between the power amplifier component 110 and the isolation component 120 brings additional power loss; (3) In large-scale multi-input multi-output antenna transceiver systems, the cost of using a large number of discrete isolation components 120 is high; (4) The RF consistency problem caused by assembly tolerance and tolerance of isolation components from multiple manufacturers is also more prominent, especially in the "one drive N" system, it is urgent to reduce the digital resource overhead in the system.

[0064] To this end, embodiments of the present application further provide a radio frequency power amplifier module. Referring to the structural schematic diagrams of the radio frequency power amplifier module shown in Figures 5 and 6 , the radio frequency power amplifier module includes: a first substrate 130; a power amplifier component 110 and an isolation component 120 disposed on the first substrate 130; the power amplifier component 110 is electrically connected to the isolation component 120 via the first substrate 130; wherein the isolation component 120 includes a ferrite element 123 and a first region 133 of the first substrate 130; the ferrite element 123 is disposed in the first region 133 of the first substrate 130.

[0065] As shown in FIG7 , the process of forming the above-mentioned RF power amplifier module includes: S1: forming a first substrate 130, a power amplifying component 110, and an isolation component 120, wherein the first substrate 130 includes a first region 133; the isolation component 120 includes a ferrite element 123, and the ferrite element 123 is disposed in the first region 133 of the first substrate 130. S2: electrically connecting the power amplifying component 110 to the first substrate 130.

[0066] In an embodiment of the present application, the ferrite element 123 in the isolation component 120 is directly arranged in the first area 133 of the first substrate 130, and a first connecting circuit can be set in the first area 133 of the first substrate 130, and is electrically connected to the rest of the isolation component 120 through the first connecting circuit, for example, it is connected to the ferrite element 123 through the first connecting circuit, that is, the first substrate 130 replaces the supporting substrate in the isolation component 120 in the aforementioned embodiment, which can effectively reduce the cost of the RF power amplifier module. At the same time, there is no need to consider the packaging avoidance problem of the isolation component, so that the routing distance between the isolation component and the power amplification component 110 can be shortened. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplification component 110 and the isolation component 120 is reduced, thereby improving the transmission efficiency of the transmission path.

[0067] In an optional embodiment, the isolation component 120 further includes a magnetic element 125, which is stacked above the ferrite element 123. Exemplarily, the magnetic element 125 is a permanent magnet element. Accordingly, referring to the structural schematic diagrams of each stage of forming the isolation component shown in (i) to (iii) in FIG8 , the process of forming the isolation component 120 is as follows: forming the ferrite element 123 and the magnetic element 125 respectively, and the ferrite element 123 and the magnetic element 125 can be of the same shape or of different shapes, which is not limited in the embodiment of the present application. For example, the ferrite element 123 and the magnetic element 125 are both cylindrical; or the ferrite element 123 is a cube and the magnetic element 125 is cylindrical. Then, a corresponding circuit pattern 1231 is formed on the surface of the ferrite element 123, and solidified by coating silver paste and sintering. Finally, the ferrite element 123 with the circuit pattern is bonded to the magnetic element 125 to form an isolation component 120 including the ferrite element 123 and the magnetic element 125. The magnetic element 125 can provide a magnetic field so that the input radio frequency signal can only flow along a specific direction.

[0068] In an optional embodiment, as shown in (1) and (2) in Figure 9, wherein (2) in Figure 9 is a cross-section of (1) in Figure 9 along AA', the isolation component 120 further includes a dielectric unit 127, which is a ring-shaped structure. The dielectric unit 127 is nested around the ferrite element 123, thereby optimizing the magnetic circuit inside the isolation component.

[0069] In an optional embodiment, referring to the schematic structural diagram of the RF power amplifier module shown in FIG10 , a RF matching circuit 131 is provided in the first substrate 130. This RF matching circuit 131 is used to match the output impedance of the power amplifier component 110 with the input impedance of the isolation component 120. Exemplarily, this RF matching circuit 131 can utilize a 50-ohm microstrip line with a pre-defined tuning network surrounding the microstrip line, thereby enabling individual RF matching circuits 131 to be tunable. The power amplifier component 110 and the isolation component 120 are electrically connected via the RF matching circuit 131. Exemplarily, the input end of the RF matching circuit 131 is electrically connected to the output end of the power amplifying component 110, and the output end of the RF matching circuit 131 is directly electrically connected to the first connecting circuit of the isolation component 120 set in the first area 133 of the first substrate 130, thereby shortening the wiring distance between the isolation component 120 and the power amplifying component 110, while reducing the area of ​​the RF power amplifier module, reducing the insertion loss between the power amplifying component 110 and the isolation component 120, and making the RF channel performance between a single power amplifying component 110 and the isolation component 120 adjustable, thereby ensuring the consistency of RF performance between multiple channels, facilitating integrated design with the Massive MIMO system, and reducing the demand for digital chip resources.

[0070] The following takes a castle-type power amplifier module as an example to further illustrate the RF power amplifier module in the above embodiment.

[0071] Referring to the structural schematic diagram of the RF power amplifier module shown in (I) of Figure 11, the castle-type RF power amplifier module includes a heat dissipation layer 132, and a second substrate 140 and a first substrate 130 stacked on the heat dissipation layer 132, and the first substrate 130 is provided with a power amplification component 110 and an isolation component 120; the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein, the isolation component 120 includes a ferrite element 123, a magnetic element 125 and a first area 133 of the first substrate 130, the magnetic element 125 is stacked on the ferrite element 123, the ferrite element 123 is arranged on the upper surface of the first area 133 of the first substrate 130, and a first connection circuit is provided in the first area 133 of the first substrate 130, and the first connection circuit is used to connect other parts of the isolation component, for example, the ferrite element 123 is electrically connected to the first connection circuit.

[0072] In an optional example, the power amplifying component 110 is a discrete device, such as the power amplifying component 110 shown in (I) of Figure 11, that is, the power amplifying component 110 includes an input matching circuit 112, a power amplifying chip 115, an output matching circuit 117, a flange structure 119 and a packaging substrate, wherein the input matching circuit 112, the power amplifying chip 115 and the output matching circuit 117 can be arranged on the flange structure 119, so that the flange structure 119 can assist the input matching circuit 112, the power amplifying chip 115 and the output matching circuit 117 in heat dissipation, the input end of the power amplifying chip 115 is electrically connected to the input matching circuit 112, and the output end of the power amplifying chip 115 is electrically connected to the output matching circuit 117, and a second connecting circuit is provided in the packaging substrate, and the second connecting circuit is used to connect the various circuits of the power amplifying component 110, for example, the second connecting circuit is electrically connected to the input matching circuit 112 and the output matching circuit 117. The second connection circuit is also electrically connected to the RF matching circuit 131 in the first substrate 130 , so that the RF signal output by the output matching circuit 117 can be sent to the RF matching circuit 131 .

[0073] However, the packaging of the power amplifier component 110 will also occupy the area of ​​the first substrate 130. Therefore, in order to further miniaturize the RF power amplifier module, in an optional example, referring to the three-dimensional structural diagram of the RF power amplifier module shown in (ii) of FIG11 and the cross-sectional schematic diagram of the RF power amplifier module shown in (iii) of FIG11, the power amplifier component 110 is an integrated device. That is, the power amplifier device includes an input matching circuit 112, a power amplifier chip 115, an output matching circuit 117 and a second area 134 of the first substrate 130, wherein a second connecting circuit is provided in the second area 134 of the first substrate 130, and the input matching circuit 112 and the output matching circuit 117 are electrically connected to the second connecting circuit provided in the second area 134 of the first substrate 130. The second connecting circuit is also directly electrically connected to the RF matching circuit 131 in the first substrate 130, that is, the first substrate 130 replaces the packaging substrate. In other optional examples, the first substrate can also replace the flange structure 11 9. It assists the input matching circuit 112, the power amplifier chip 115, and the output matching circuit 117 in dissipating heat, thereby effectively reducing the cost of the RF power amplifier module. At the same time, it enables the power amplifier component 110 and the isolation component 120 to be integrated on the first substrate 130 without having to consider the packaging avoidance issues of the power amplifier component 110 and the isolation component 120, thereby further shortening the wiring distance between the isolation component and the power amplifier component 110. While reducing the area of ​​the RF power amplifier module, it also reduces the insertion loss between the power amplifier component 110 and the isolation component 120, thereby improving the transmission efficiency of the transmission path.

[0074] It can be understood that the above examples are only examples listed for a better understanding of the technical solutions of the embodiments of the present application, and are not the only limitation to the embodiments of the present application. The ferrite element 123 in the embodiments of the present application is not limited to being set on the surface of the first substrate 130.

[0075] In an optional example, as shown in the structural diagram of the RF power amplifier module in (1) of Figure 12, the ferrite element 123 can also be embedded in the first substrate 130. A hollow portion 135 is provided in the first region 133 of the first substrate 130, and the hollow portion 135 can at least accommodate a portion of the ferrite element 123, so that the ferrite element 123 is embedded in the first substrate 130 to form the RF power amplifier module shown in (2) of Figure 12. For example, the depth of the hollow portion 135 is less than or equal to the height of the ferrite element 123, thereby forming the structure of the RF power amplifier module as shown in (a) of Figure 13, wherein at least part of the ferrite element 123 is embedded in the first substrate 130; or the depth of the hollow portion 135 is greater than the height of the ferrite element 123, but less than the total height of the ferrite element 123 and the magnetic element 125, thereby forming the structure of the RF power amplifier module as shown in (b) of Figure 13, wherein the entire ferrite element 123 and part of the magnetic element 125 are embedded in the first substrate 130; or, the depth of the hollow portion 135 is equal to the total height of the ferrite element 123 and the magnetic element 125, thereby forming the structure of the RF power amplifier module as shown in (c) of Figure 13, wherein both the ferrite element 123 and the magnetic element 125 are embedded in the first substrate 130.

[0076] Similarly, the position of the magnetic element 125 is not limited in the embodiment of the present application. The magnetic element 125 can be stacked above the ferrite element 123 or below the ferrite element 123. For example, the magnetic element 125 is embedded in the first substrate 130, and the ferrite element 123 is stacked above the magnetic element 125. A hollow portion 135 is provided in the first region 133 of the first substrate 130. The hollow portion 135 can accommodate at least a portion of the magnetic element 125, so that the magnetic element 125 can be embedded in the first substrate 130. For example, the depth of the hollow portion 135 is less than or equal to the height of the magnetic element 125, thereby forming the structure of the RF power amplifier module as shown in (a) of Figure 14, and at least part of the magnetic element 125 is embedded in the first substrate 130; or the depth of the hollow portion 135 is greater than the height of the magnetic element 125, but less than the total height of the ferrite element 123 and the magnetic element 125, thereby forming the structure of the RF power amplifier module as shown in (b) of Figure 14, and the entire magnetic element 125 and part of the ferrite element 123 are embedded in the first substrate 130; or, the depth of the hollow portion 135 is equal to the total height of the ferrite element 123 and the magnetic element 125, thereby forming the structure of the RF power amplifier module as shown in (c) of Figure 14, wherein both the ferrite element 123 and the magnetic element 125 are embedded in the first substrate 130. In other examples, regardless of whether the ferrite element 123 is disposed on the surface of the first region 133 of the first substrate 130 or embedded in the first substrate 130, the magnetic element 125 can also be embedded in the second substrate 140, thereby forming the structure of the RF power amplifier module as shown in (iv) in Figure 14 , or the magnetic element 125 can also be embedded in the heat dissipation layer 132, thereby forming the structure of the RF power amplifier module as shown in (v) in Figure 14 , as long as the magnetic element 125 can provide a stable magnetic field for the ferrite element 123.

[0077] The embodiment of the present application does not limit the number of power amplification components 110 and isolation components 120. For example, the RF power amplifier module shown in (1) of Figure 15 integrates multiple power amplification components 110 and isolation components 120. The power amplification components 110 and the isolation components 120 correspond one to one, so that multiple RF paths are integrated in one RF power amplifier module to form a power amplification circuit as shown in (2) of Figure 15.

[0078] The radio frequency power amplifier module in the above embodiment will be further described below by taking a metal substrate type power amplifier module as an example.

[0079] Referring to the structural schematic diagram of the RF power amplifier module shown in Figure 16, the metal substrate type RF power amplifier module includes a heat dissipation layer 132, and a first substrate 130 stacked on the heat dissipation layer 132, and a power amplification component 110 and an isolation component 120 are arranged on the first substrate 130; the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein, the isolation component 120 includes a ferrite element 123, a magnetic element 125 and a first area 133 of the first substrate 130, the magnetic element 125 is stacked on the ferrite element 123, the ferrite element 123 is arranged on the surface of the first area 133 of the first substrate 130, and a first connection circuit is provided in the first area 133 of the first substrate 130, which is used to connect other parts of the isolation component.

[0080] The RF power amplifier module in the above embodiment will be further described below by taking a flip-chip power amplifier module as an example.

[0081] Referring to the structural schematic diagram of the RF power amplifier module shown in Figure 17, the castle-type RF power amplifier module includes a heat dissipation layer 132 and a first substrate 130, and a power amplification component 110 and an isolation component 120 are arranged on the first substrate 130; the heat dissipation layer 132 is arranged on the side of the power amplification component 110 away from the first substrate 130, and the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein, the isolation component 120 includes a ferrite element 123, a magnetic element 125 and a first area 133 of the first substrate 130, the magnetic element 125 is stacked on the ferrite element 123, the ferrite element 123 is arranged on the upper surface of the first area 133 of the first substrate 130, and a first connecting circuit is provided in the first area of ​​the first substrate 130, which is used to connect other parts of the isolation component, for example, the ferrite element 123 is electrically connected to the first connecting circuit.

[0082] It should be noted that when the RF power amplifier module is a metal substrate type power amplifier module and a flip-chip type power amplifier module, the power amplification component 110 in the RF power amplifier module can be a discrete device or an integrated device. At the same time, the embodiment of the present application does not limit the position of the magnetic element 125 in the RF power amplifier module. The magnetic element 125 can be set on the upper side or lower side of the ferrite element 123, as long as the projection of the magnetic element 125 on the first substrate 130 at least partially overlaps with the projection of the ferrite element 123 on the first substrate 130.

[0083] In other embodiments, referring to the structural schematic diagram of the RF power amplifier module shown in FIG18 , the RF power amplifier module may be a spin wave structure, so that the magnetic element 125 may not be provided in the isolation component 120, and it is only necessary to provide a coating layer 128 on the surface of the ferrite element 123. A RF circuit is provided in the coating layer 128, and the RF circuit is electrically connected to the first connection circuit in the first area 133 of the first substrate 130, so that the input RF signal can only flow along a specific direction.

[0084] An embodiment of the present application also provides an antenna transceiver module 11. Referring to the structural schematic diagram of the antenna transceiver module shown in Figure 19, the antenna transceiver module 11 includes a transmitting path 12, a receiving path 13 and an antenna 14. The transmitting path 12 and the antenna 14 are electrically connected, and the receiving path 13 and the antenna 14 are electrically connected. The transmitting path 12 includes the RF power amplifier module 103 provided in the above embodiment.

[0085] Exemplarily, the transmission path further includes a driving circuit 101 and a filtering component 102 . The output end of the driving circuit 101 is electrically connected to the input end of the RF power amplifier module 103 , and the output end of the RF power amplifier module 103 is electrically connected to the filtering component 102 .

[0086] The driver circuit 101 transmits the received digital baseband signal to the RF power amplifier module 103, while adjusting the digital baseband signal to ensure that it can be transmitted intact. The RF power amplifier module 103 amplifies the digital baseband signal and modulates it into a RF signal. The modulated RF signal has high power, high efficiency, and low distortion, achieving optimal transmission. The modulated RF signal is filtered by the filter component 102 to prevent interference with surrounding devices. Finally, the RF signal passes through the filter component 102 in the forward direction and is transmitted by the antenna. Furthermore, because the RF power amplifier module 103 also integrates the isolation component 120, it can prevent interference signals reflected from the load end, such as the filter component 102 and the antenna 14, from affecting the performance of the power amplifier component 110, thereby deteriorating the power amplifier component 110. It can also reduce the impact of the reflected signal on the digital pre-distortion (DPD) forward correction signal.

[0087] In the embodiment of the present application, since the isolation component 120 is directly integrated into the RF power amplifier module 103, the cost of the RF power amplifier module 103 can be effectively reduced, thereby reducing the cost of the antenna transceiver module 11. At the same time, the RF power amplifier module 103 shortens the wiring distance between the isolation component 120 and the power amplification component 110, and reduces the insertion loss between the power amplification component 110 and the isolation component 120. Therefore, the transmission efficiency of the antenna transceiver module can be improved while reducing the area of ​​the antenna transceiver module.

[0088] Referring to Figure 20, an embodiment of the present application also provides a base station 100, which includes a baseband processing unit 20, a digital-to-analog conversion unit 30 and at least one antenna transceiver module 11 provided in the above embodiment, and the baseband processing unit 20 is connected to the antenna transceiver module 11 through the digital-to-analog conversion unit 30.

[0089] It can be understood that one or more antenna transceiver modules 11 can be set in the base station 100. When the base station is provided with multiple antenna transceiver modules 11, at least one of the multiple antenna transceiver modules 11 is the antenna transceiver module 11 in the above embodiment, thereby reducing the cost of the base station while improving the transmission efficiency of the base station.

[0090] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency power amplifier module, characterized in that: include: a first substrate; A power amplifying component and an isolating component are disposed on the first substrate; the power amplifying component is electrically connected to the isolating component through the first substrate; The isolation component includes a ferrite element and a first region of a first substrate, and the ferrite element is disposed in the first region of the first substrate.

2. The radio frequency power amplifier module according to claim 1, characterized in that: The power amplifying component includes a power amplifying chip and a second region of the first substrate, and the power amplifying chip is disposed in the second region of the first substrate.

3. The radio frequency power amplifier module according to claim 1 or 2, characterized in that: The isolation component further includes a dielectric unit, which is a ring-shaped structure and is nested around the ferrite element.

4. The radio frequency power amplifier module according to any one of claims 1 to 3, characterized in that: The isolation component further includes a magnetic element, which is disposed on one side of the ferrite element, and a projection of the magnetic element on the first substrate at least partially overlaps with a projection of the ferrite element on the first substrate.

5. The radio frequency power amplifier module according to claim 4, characterized in that: The radio frequency power amplifier module also includes a second substrate, which is located on a side of the first substrate away from the power amplification component, and the second substrate is electrically connected to the first substrate.

6. The radio frequency power amplifier module according to claim 4, characterized in that: The radio frequency power amplifier module also includes a heat dissipation layer, which is located on a side of the first substrate away from the power amplification component.

7. The radio frequency power amplifier module according to any one of claims 1 to 5, characterized in that: The radio frequency power amplifier module also includes a heat dissipation layer, which is located on a side of the power amplification component away from the first substrate.

8. The radio frequency power amplifier module according to claim 5, characterized in that: The magnetic element is embedded in the second substrate.

9. The radio frequency power amplifier module according to claim 6, characterized in that: The magnetic element is embedded in the heat dissipation layer.

10. The radio frequency power amplifier module according to claim 4, characterized in that: The magnetic element is embedded in the first substrate and is arranged on a side of the ferrite element close to the first substrate.

11. The radio frequency power amplifier module according to any one of claims 1 to 6, characterized in that: The ferrite element and the power amplifying component are disposed on the first substrate and are located on the same side of the first substrate.

12. The radio frequency power amplifier module according to any one of claims 1 to 6, characterized in that: The ferrite element is embedded in the first substrate.

13. The radio frequency power amplifier module according to claim 1, characterized in that: The ferrite element is embedded in the first substrate, and a coating layer is arranged on the ferrite element.

14. The radio frequency power amplifier module according to any one of claims 2 to 13, characterized in that: The power amplification component also includes an input matching circuit and an output matching circuit; The input matching circuit and the output matching circuit are arranged in the second area of ​​the first substrate, the input end of the power amplifier chip is electrically connected to the input matching circuit, and the output end of the power amplifier chip is electrically connected to the output matching circuit.

15. The radio frequency power amplifier module according to claim 1, characterized in that: The power amplifier component includes a power amplifier chip, an input matching circuit, an output matching circuit and a packaging substrate. The power amplifier chip, the input matching circuit and the output matching circuit are arranged on the packaging substrate. The input end of the power amplifier chip is electrically connected to the input matching circuit, and the output end of the power amplifier chip is electrically connected to the output matching circuit.

16. A method for manufacturing a radio frequency power amplifier module, characterized in that: include: A first substrate, a power amplifying component and an isolation component are formed respectively; wherein the first substrate includes a first region; the isolation component includes a ferrite element, and the ferrite element is arranged in the first region of the first substrate; The power amplifying component is electrically connected to the first substrate.

17. An antenna transceiver module, characterized in that: It comprises a receiving path, a transmitting path and an antenna, wherein the transmitting path is electrically connected to the receiving path and the antenna respectively, wherein the transmitting path comprises a radio frequency power amplifier module as described in any one of claims 1-15.

18. A base station, characterized in that: It comprises a baseband processing unit, a digital-to-analog conversion unit and at least one antenna transceiver module as claimed in claim 17, wherein the baseband processing unit is connected to the antenna transceiver module via the digital-to-analog conversion unit.

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