Plasma processing apparatus, pre-processing device, and mounting system

Abstract

This plasma processing apparatus 100 includes: a stage 20 on which a component supply body TW, in which a wafer W that has been divided into individual electronic components E is bonded to a sheet T that is attached to a ring R, is placed; a chamber 11b which is provided with the stage 20, and the inside of which can be decompressed; a gas introduction port 30 for introducing a reaction gas into the decompressed chamber 11b; a plasma generator 40 for generating an active species by converting the reaction gas into plasma; a mask 50 which is provided in the chamber 11b so as to expose the wafer W and cover the ring R and a part of the sheet T, while being at a distance from the sheet T; an exhaust port 60 for exhausting the reaction gas from the inside of the chamber 11b; and an active species elimination unit for removing the active species by means of a negative pressure before the active species reaches the region between the ring R and the electronic components E. For example, the active species elimination unit has a discharge port 50b that is provided on the mask.

Description

Plasma processing apparatus, pre-processing apparatus and mounting system

[0001] The present invention relates to a plasma processing apparatus, a preprocessing apparatus, and a mounting system.

[0002] Direct bonding is a method for mounting electronic components such as semiconductor chips to a mounting substrate. Direct bonding is a method in which the connection terminals of the mounting substrate and electronic components are directly bonded to each other using solid-state bonding without using bonding materials (adhesives) such as solder bumps. This eliminates the need to consider the effects of bonding materials, allows for narrow connection terminal spacing, and enables high-density packaging. Semiconductor chips are electronic components formed by dividing wafers into individual pieces, and are sometimes supplied attached to an adhesive sheet attached to a ring. The component consisting of the sheet to which the wafer is attached and the ring is called a component supply. The wafer on which electronic components are mounted after being removed from the component supply is called a mounting substrate.

[0003] When electronic components are directly bonded to a mounting substrate, pretreatment is performed on the electronic components and mounting substrate before bonding. This pretreatment involves surface treatments such as activation and cleaning, as well as cleaning. Activation is a process in which the surfaces of the electronic components and mounting substrate are activated by active species such as ions and radicals generated by converting a reactive gas into plasma. Activation refers to breaking the chemical bonds of molecules on the surface. Cleaning is a process in which the surfaces of the electronic components and mounting substrate are cleaned by the generated active species such as ions and radicals. Cleaning refers to the removal of particles adhering to the surface by flicking them off or the decomposition and removal of organic matter. In the following description, this surface treatment may be referred to as plasma treatment. Cleaning is a process in which particles remaining on the surfaces of the electronic components and mounting substrate are removed.

[0004] Japanese Patent Application Laid-Open No. 2020-021966

[0005] When a component supply body is pre-treated with plasma, the exposed portions of the wafer, ring, and sheet to which the wafer is attached are exposed to the plasma. This can cause organic matter constituting the sheet, organic matter on the surface of the ring, and metal constituting the ring to be scattered by activated species and adhere to the wafer, potentially contaminating the electronic components. To address this issue, the exposed portions of the ring and sheet other than the ring and wafer are shielded from the activated species by covering them with a mask.

[0006] However, if there is a large gap between the mask and the sheet when it is covered with the mask, active species will enter through the gap, resulting in insufficient shielding. If the gap between the mask and the sheet is eliminated or narrowed, the sheet may stick to the mask, making it impossible to remove the component supply body.

[0007] An object of the embodiments of the present invention is to provide a plasma processing apparatus, a preprocessing apparatus, and a mounting system that can prevent contamination of a wafer caused by exposure of a sheet and a ring to activated species from plasma.

[0008] The plasma processing apparatus of the embodiment includes a stage on which a component supply body having wafers diced into electronic components attached to a sheet attached to a ring is placed, a chamber in which the stage is installed and the interior can be depressurized, a gas inlet for introducing a reactive gas into the depressurized chamber, a plasma generator for generating active species by plasmatizing the reactive gas, a mask installed in the chamber to expose the wafer and cover the ring and a portion of the sheet while spaced apart from the sheet, an exhaust port for exhausting the reactive gas from the chamber, and an active species removal unit for removing the active species by negative pressure before the active species reach the area between the ring and the electronic components.

[0009] The pretreatment device of the embodiment includes the plasma treatment device, a load port on which a transport container containing the component supply body is mounted, a supply body cleaning section that cleans the component supply body, a mounting substrate cleaning section that cleans the mounting substrate, and a transport section that transports the component supply body.

[0010] The mounting system of the embodiment includes the pre-treatment device, and a bonding section that detaches the electronic components from the component supply body that has been treated by the plasma treatment device and mounts the electronic components on a mounting substrate.

[0011] Embodiments of the present invention can prevent contamination of the wafer due to exposure of the sheet and ring to activated species from the plasma.

[0012] 1 is an explanatory diagram showing the processing of each part of a mounting system according to an embodiment; FIG. 2 is a simplified perspective plan view showing the configuration of a mounting system according to an embodiment; FIG. 3 is a cross-sectional view showing a plasma processing apparatus according to an embodiment; FIG. 4 is a plan view (A) showing a component supply body being carried in and out of a plasma processing apparatus; FIG. 5 is a cross-sectional view (B) taken along the arrows a-a in FIG. 2A; and FIG. 6 is a cross-sectional view (C) taken along the arrows bb in FIG. 2A. A cross-sectional view (A) showing a mounting substrate being raised relative to a stage when a mounting substrate is being carried in and out of a plasma processing apparatus, and a cross-sectional view (B) showing the mounting substrate being placed on the stage. A cross-sectional view (A) showing a component supply body being received and handed over from a robot hand by a rod in a plasma processing apparatus; a cross-sectional view (B) showing the robot hand being retracted; a cross-sectional view (C) showing the mounting substrate being placed on a stage; and a cross-sectional view (D) showing the mask being lowered. A cross-sectional view showing a mask being biased by a biasing member; a cross-sectional view of a mask provided with an exhaust port and an exhaust path; a simplified configuration diagram showing a supply body cleaning unit and a mounting substrate cleaning unit of a mounting system; a flowchart showing an operation procedure according to an embodiment; and an explanatory view showing the flow of active species when an exhaust port is provided. 1A, 1B, and 1C are bottom perspective and cross-sectional views taken along the arrows c-c of (B) showing a modified mask having an outlet close to the sheet; 1A, 1B, and 1C are bottom perspective and cross-sectional views taken along the arrows d-d of (B) showing a modified mask having a support tube; 1A, 1B, and 1C are bottom cross-sectional views taken along the arrows e-e of (A) showing a modified mask having multiple outlets; 1C, 1C, and 1D are bottom cross-sectional views taken along the arrows ff of (C) showing a modified mask having slit-shaped outlets; 1D are cross-sectional views showing modified outlets, with 1A being an example where the outlets open on the side of the mask and 1B being an example where the outlets open on the top of the mask; 1D are cross-sectional views showing modified exhaust ports; 1A are cross-sectional views showing the holding position of a component supply body when a common drive mechanism is used; 1B are cross-sectional views showing the component supply body during lifting and lowering; and 1C are cross-sectional views showing the component supply body when placed on the stage. 10A and 10B are cross-sectional views showing the mounting substrate when it is placed on the stage when the drive mechanism is shared, and an example in which the mask is supported by a stopper. 10B are cross-sectional views showing the holding position of the mounting substrate when the stopper is omitted, a cross-sectional view showing the mounting substrate during lifting and lowering, and a cross-sectional view showing the mounting substrate when it is placed on the stage. 10C are cross-sectional views showing the component supply body when it is placed on the stage when the stopper is omitted. 10D are cross-sectional views showing the case in which the bottom surface of the hole is used as a stopper for the mask. 10E are cross-sectional views showing the case in which the bottom surface of the hole is used as a stopper for the mask. 10F are cross-sectional views showing the case in which the bottom surface of the hole is used as a stopper for the mask. 10G are cross-sectional views showing the case in which the stopper is omitted. 10G are cross-sectional views showing the case in which the stopper is omitted. 10H ...FIG. 1 is a cross-sectional view showing a configuration in which the mask is driven from above the chamber. FIG. 2 is a simplified perspective plan view showing a mounting system having a plurality of bonding units. FIG. 3 is a simplified perspective plan view showing a pretreatment device having no bonding units. FIG. 4 is a cross-sectional view showing a modified example of the plasma treatment device of the embodiment, having a partition wall. FIG. 5 is an explanatory view showing the flow of active species when a partition wall is present. FIG. 6 is a cross-sectional view showing a modified example of the partition wall. FIG. 7 is a cross-sectional view showing a modified example of an exhaust port. FIG. 8 is a cross-sectional view showing a modified example in which the partition wall is movable. FIG. 9 is a cross-sectional view showing a modified example in which the mask 50 is movable together with the partition wall.

[0013] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the drawings are schematic diagrams, and the size, proportions, etc. of each part are exaggerated for ease of understanding.

[0014] [Overview] As shown in Figures 1 and 2, the mounting system 1 of this embodiment is an example of a system in which a pre-processing unit X pre-processes the component supply body TW and mounting board BW to be processed, and a mounting unit Y mounts electronic components E (semiconductor chips) picked up from the component supply body TW onto the mounting board BW.

[0015] As shown in FIG. 1 , the component supply TW is a wafer (semiconductor wafer) W attached to a sheet T attached to a ring R. At this time, the wafer W is singulated into electronic components E (semiconductor chips). The sheet T is a thin, stretchable member with an adhesive surface, and its adhesive strength can be reduced by irradiation with UV (ultraviolet) light. In the following description, processing of the component supply TW refers to processing of the electronic components E. The mounting substrate BW is the wafer (semiconductor wafer) W onto which the electronic components E detached from the component supply TW are bonded (mounted).

[0016] As shown in FIG. 2, the mounting system 1 of this embodiment is an apparatus that performs pre-processing (activation processing, cleaning processing, washing processing) on ​​component supplies TW and mounting boards BW that have been transported in multiple numbers in a transport container F such as a FOUP (Front Opening Unified Pod) or a FOSB (Front Opening Shipping Box) in the upstream process, and then mounts electronic components E on them.

[0017] The mounting system 1 is configured by arranging multiple chambers 11b, each housing various processing devices, around a box-shaped container base 11a according to the processing requirements. The base 11a is provided with a load port 11c on which a transport container F is mounted. A transport container F housing unprocessed component supplies TW and mounting boards BW is mounted on the load port 11c, and the component supplies TW and mounting boards BW are removed one by one from the transport container F by a transport unit 190, and are transported into each chamber 11b, processed, and transported out. The base 11a is also provided with a fan filter unit (FFU) (not shown) on the ceiling, which generates a downflow of clean air to maintain a clean atmosphere within the base 11a. Such an FFU may also be provided in the chamber 11b as needed.

[0018] The mounting system 1 of this embodiment has a pre-processing device which is a pre-processing unit X that performs pre-processing including activation processing, cleaning processing, and washing processing of electronic components E, a buffer device that temporarily stores component suppliers TW and mounting boards BW, and a bonding device which is a mounting unit Y that mounts electronic components E on mounting boards BW. Note that the buffer device can also be included in the pre-processing unit X.

[0019] More specifically, the mounting system 1 of this embodiment is a system including a plasma processing apparatus 100, a supply cleaning section 110, a mounting substrate cleaning section 120, an adjustment processing section 130, a gauging section 140, an alignment section 150, a supply buffer section 160, a mounting substrate buffer section 170, a bonding section 180, a transport section 190, and a control section 200.

[0020] The pre-processing device is made up of a plasma processing device (surface processing device) 100, a supply cleaning device 110, a mounting substrate cleaning device 120, an adjustment processing device 130, a gauging device 140, and an alignment device 150. The supply buffer device 160 and a mounting substrate buffer device 170 make up a buffer device. The bonding device is made up of a bonding device 180. A transport device, which is a transport device 190, transports component supply devices TW and mounting substrates BW to and from each device. Then, a control device 200 controls each device, and the mounting system 1 is made up. As described above, the buffer devices (supply buffer device 160, mounting substrate buffer device 170) can be included in the pre-processing device.

[0021] [Plasma Processing Apparatus] The plasma processing apparatus 100 is an apparatus (surface processing unit) that performs surface treatment of the component supply body TW and the mounting substrate BW. The surface treatment is a process that modifies (activates and cleans) the surfaces where the component supply body TW and the mounting substrate BW are bonded. This modification is performed by introducing a reactive gas into a depressurized chamber, applying electric power to the reactive gas to generate plasma, and irradiating the generated active species, such as ions and radicals, onto the surfaces where the component supply body TW and the mounting substrate BW are bonded.

[0022] 3, the plasma processing apparatus 100 of this embodiment includes a chamber 11b capable of reducing the pressure inside, which is provided with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60. The chamber 11b is also provided with a loading / unloading port LN for loading / unloading a component supplier TW or a mounting substrate BW, and the loading / unloading port LN is configured to be openable and closable by a shutter SH. In FIG. 3, the loading / unloading port LN is indicated by a dotted line, and the shutter SH is indicated by a dashed line.

[0023] (Stage) The stage 20 is used to place the component supplier TW or the mounting board BW that has been carried into the chamber 11b through the loading / unloading port LN that is opened by opening the shutter SH. In this embodiment, the stage 20 is a placement area formed on the inner bottom surface of the chamber 11b. In the following description, the side of the component supplier TW that has electronic components E attached thereto is referred to as the top, and the opposite side is referred to as the bottom.

[0024] The stage 20 is provided with a driving unit 21 that raises and lowers the component supplier TW or the mounting board BW. The driving unit 21 has rods 21a, 21b, and a driving mechanism 21c. The rods 21a and 21b are vertical, bar-shaped members that airtightly penetrate the bottom of the chamber 11b and are capable of moving up and down. A plurality of rods 21a are arranged at positions where they can support the underside of the component supplier TW. More specifically, they support the underside of the ring R. The rods 21a are first rods on which the component supplier TW that is carried in and out of the chamber 11b is placed. A plurality of rods 21b are arranged at positions where they can support the underside of the mounting board BW. The rods 21b are second rods on which the mounting board BW that is carried in and out of the chamber 11b is placed.

[0025] In this embodiment, the mounting board BW is smaller than the component supplier TW. Therefore, the mounting board BW needs to be supported on the inside of the component supplier TW. For this reason, the rod 21b is disposed so as to be located on the inside of the rod 21a. The rod 21b also protrudes so as to be lower than the rod 21a. Therefore, the mounting board BW is placed on the rod 21b at a position lower than the height at which the component supplier TW is placed on the rod 21a. In this way, the rod 21b is disposed so as to protrude on the inside of the rod 21a and lower. This prevents the rod 21b from interfering with the component supplier TW when the component supplier TW is being loaded or unloaded.

[0026] As shown in Figures 4(A) to 4(C), in this embodiment, three rods 21a are arranged at equal intervals along the inside of the outer circumferential circle of the component supplier TW. Also, as shown in Figures 4(A), 5(A), and 5(B), three rods 21b are arranged at equal intervals along the inside of the outer circumferential circle of the mounting board BW. Note that Figure 4(B) is a cross-sectional view taken along the arrow a-a in Figure 4(A), and Figure 4(C) is a cross-sectional view taken along the arrow b-b in Figure 4(A). Also, in Figures 3 to 8, 11, 15 to 21, and 25 to 30, rods 21a, 21b, 51a, support shaft 50a, and the like that do not appear in the actual cross section are illustrated to make the operation easier to understand.

[0027] The drive mechanism 21c moves the rods 21a and 21b up and down to raise and lower the component supplier TW and the mounting board BW. An air cylinder, for example, is used as the drive mechanism 21c. However, the drive mechanism 21c is not limited to this and may be any mechanism capable of moving the rods 21a and 21b, such as a hydraulic cylinder or a ball screw mechanism.

[0028] (Gas Inlet) The gas inlet 30 is an opening for introducing a reaction gas into the reduced pressure chamber 11b. The gas inlet 30 is provided on the side of the chamber 11b so that the reaction gas can be introduced above the stage 20. A supply device 31 is connected to the gas inlet 30 via a pipe 31a. The supply device 31 supplies the reaction gas from the gas inlet 30 into the chamber 11b. The reaction gas may be, for example, N ２ The reactive gas may be a rare gas such as He, Ar, or Ne, or oxygen or hydrogen. Water vapor may also be added. By using these reactive gases, the surface of the object to be treated is cleaned to remove organic matter, and the surface of the object to be treated is cleaned to remove organic matter, for example, SiO ２ The surface can be activated by cutting the joints. In addition, hydroxyl groups can be added to the surface by adding water vapor. Hereinafter, the space into which the reaction gas is introduced is referred to as the gas space GA.

[0029] (Plasma Generator) The plasma generator 40 generates active species by converting a reactive gas into plasma. These active species are irradiated onto the joining surfaces of the component supply body TW and the mounting board BW, thereby activating and cleaning the respective surfaces. As shown in FIG. 3 , the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is provided outside the chamber 11b at a position corresponding to the upper part of the gas space GA. A window member 11d is provided in the chamber 11b between the antenna 41 and the gas space GA. The window member 11d is made of a dielectric material such as quartz. When a high-frequency voltage is applied to the antenna 41, the antenna 41 generates plasma P in the gas space GA through inductive coupling via the window member 11d.

[0030] The power supply 42 is connected to the antenna 41 and applies a high-frequency voltage to the antenna 41. The matching box 43 is a matching circuit connected between the power supply 42 and the antenna 41. The matching box 43 stabilizes the discharge of the plasma P by matching the impedance on the input side and the impedance on the output side.

[0031] (Mask) As shown in FIGS. 3 and 4 , the mask 50 is provided in the chamber 11b, exposes the wafer W, and covers the ring R and a portion of the sheet T while being spaced apart from the sheet T. Note that in FIG. 4A , the rods 21a and 21b are below the mask 50, but are shown by solid lines for ease of understanding. The mask 50 is disposed so as to surround the periphery of the wafer W attached to the center of the ring R. More specifically, the mask 50 is a ring-shaped member that covers the exposed surface of the sheet T other than the area where the wafer W is attached and the top surface of the ring R. The inner diameter of the mask 50 is preferably equal to or larger than the outer diameter of the wafer W so that the wafer W is exposed and the exposed surface of the sheet T not attached to the wafer W is covered by the mask 50. It is preferable to prevent the mask 50 from becoming a source of contamination for the wafer W by making the mask 50 from a material such as quartz that has a low sputtering rate with the plasma P, or by applying a plasma-resistant surface treatment such as coating yttria to SUS.

[0032] Furthermore, if the position of the wafer W is shifted, assuming that the inner diameter of the mask 50 is the same as the outer diameter of the wafer W, the outer edge of the wafer W will be covered in the shifted direction, and the sheet T near the outer edge of the wafer W will not be covered in the opposite direction.

[0033] In such a case, in order to minimize the occurrence of a state in which the sheet T is not covered, it is conceivable to make the inner diameter of the mask 50 smaller than the outer diameter of the wafer W. In this case, it is necessary to pay attention to the influence on the processing of the electronic components E located on the peripheral portion of the wafer W. Of course, even if the sheet T is not covered, it is acceptable as long as the influence of exposure to activated species is within an acceptable range.

[0034] Therefore, the inner diameter of the mask 50 relative to the outer diameter of the wafer W may vary to some extent in consideration of the accuracy of attaching the wafer W to the ring R and the balance between plasma processing and particle suppression. In other words, the inner diameter of the mask 50 is not limited to being the same as the outer diameter of the wafer W.

[0035] A plurality of support shafts 50a protrude from the bottom of the mask 50 along the inside of the outer circumferential circle of the mask 50. The support shafts 50a are inserted into holes 11e provided in the bottom of the chamber 11b so as to be movable up and down. Stoppers 11f are provided on the upper edges of the holes 11e. The stoppers 11f are protrusions formed to restrict the descent of the mask 50 to a predetermined height position. In this embodiment, the stoppers 11f maintain the height of the mask 50 when the mounting board BW is placed on it at the same height as when the mask 50 covers the component supplier TW. As will be described later, the support shafts 50a in this embodiment are divided into three support shafts SA for lifting and three support shafts SB for downward biasing (see FIG. 4).

[0036] The mask 50 is provided so as to be able to move up and down by a driving unit 51. As shown in Fig. 4B, the driving unit 51 has a rod 51a and a driving mechanism 51b. The rod 51a is a vertical rod-shaped member that airtightly penetrates the bottom of the chamber 11b so as to be able to move up and down.

[0037] A plurality of rods 51a are arranged at positions capable of supporting the lower surface of the mask 50. In this embodiment, three rods 51a protrude through the holes 11e and come into contact with the three support shafts SA (50a), respectively.

[0038] 6A to 6D, the driving mechanism 51b moves the rod 51a up and down to raise and lower the mask 50. An air cylinder, for example, is used as the driving mechanism 51b. However, the driving mechanism 51b is not limited to this and may be any mechanism that can move the rod 51a, such as a hydraulic cylinder or a ball screw mechanism.

[0039] As shown in FIG. 7 , the support shaft SB (50a) is biased downward by a biasing member 11g provided in the hole 11e. FIG. 7 shows a state in which the support shaft SA (50a), not shown in FIG. 7 , has descended and the mask 50 is in contact with the ring R and is stationary. In FIG. 7 , the dashed-dotted line indicates a state in which the mask 50 is pushed up. In this embodiment, the biasing member 11g is a tension spring whose both ends are engaged with a spring post 11h provided in a through-hole formed in the support shaft 50a (SB) and a spring post 11i provided in the hole 11e of the chamber 11b, and which biases the mask 50 downward. The rod 51a does not contact the support shaft SB (50a), and the downward biasing of the support shaft SB (50a) presses the support shaft SA (50a) into contact with the rod 51a via the mask 50.

[0040] Furthermore, as shown in FIG. 8 , the mask 50 is provided with an exhaust port 50b. FIG. 8 shows a state in which the support shaft SA (50a), not shown in FIG. 8 , has descended and the mask 50 is in contact with the ring R and is stopped. In FIG. 8 , the dashed-dotted line indicates a state in which the mask 50 is pushed up. The exhaust port 50b is an opening provided in the mask 50 to exhaust active species from the vicinity of the region between the ring R and the electronic component E. The exhaust port 50b opens on the surface facing the sheet T and communicates with an exhaust path 50c provided in the mask 50. The exhaust port 50b and the exhaust path 50c pass through three support shafts 50a (SC) that are not in contact with the rod 51a and are not biased by the biasing member 11g, and communicate with the hole 11e. The surface facing the sheet T here refers, more specifically, to a surface of the mask 50 that can come into contact with the ring R or the stage 20.

[0041] Three exhaust ports 50b are provided corresponding to the three support shafts 50a (SC). That is, a plurality of exhaust ports 50b are provided along the inner diameter of the mask 50, i.e., along the periphery of the wafer W. An exhaust hole 50d communicating with the hole 11e is provided in the bottom of the chamber 11b, and an exhaust device 50f is connected to the exhaust port 50b via a pipe 50e. As a result, the exhaust port 50b is provided so that the exhaust device 50f can apply negative pressure to the exhaust port 50b to exhaust the activated species.

[0042] (Exhaust Port) As shown in FIG. 3, the exhaust port 60 is an opening for exhausting gas from the chamber 11b. In this embodiment, the exhaust port 60 is provided on the side surface of the chamber 11b. An exhaust device 61 is connected to the exhaust port 60 via a pipe 61a. The exhaust device 61 reduces the pressure inside the chamber 11b through the exhaust port 60. The exhaust device 61 also exhausts the reaction gas from the chamber 11b. Note that the exhaust device 50f controls the exhaust from the exhaust port 50b so that the pressure inside the exhaust hole 50d is lower than the pressure inside the chamber 11b reduced by the exhaust device 61 (see FIG. 8).

[0043] [Supplier Cleaning Unit] The supplier cleaning unit 110 is a processing chamber that cleans the component supplier TW. The supplier cleaning unit 110 uses cleaning liquid L to clean particles remaining on the plasma-treated component supplier TW or particles generated by the plasma processing. The cleaning targets are the surfaces of the electronic components E, the spaces between the electronic components E, and the surface of the sheet T, and particles adhering to these surfaces are cleaned and removed. As shown in FIG. 9 , the supplier cleaning unit 110 includes a cleaning chamber 111 that is a container in which the cleaning process is performed, a support unit 112 that supports the component supplier TW, a rotation mechanism 113 that rotates the support unit 112, a cup 114 that receives the splashed cleaning liquid L from around the component supplier TW, and a supply unit 115 that supplies the cleaning liquid L.

[0044] The cleaning chamber 111 is provided with an opening 111a through which the component supply TW is carried in and out, and the opening 111a is configured to be openable and closable by a shutter 111b. The component supply TW is carried in and out of the cleaning chamber 111 by the transport unit 190 through the opening 111a opened by opening the shutter 111b. At this time, the cup 114 is retracted by a lifting mechanism (not shown). The upper surface of the support unit 112 is provided with an eccentric pin that rotates and holds the outer periphery of the component supply TW. The supply unit 115 is provided with a nozzle 115a that drips cleaning liquid L and a movement mechanism 115b that moves the nozzle 115a.

[0045] The cleaning process is performed by supplying the cleaning liquid L from the nozzle 115a to the surface to be processed of the component supply body TW, which is held by the eccentric pin of the support part 112 and rotated by the rotation mechanism 113. The cleaning liquid L is, for example, DIW.

[0046] The rotation mechanism 113 of the supply cleaning section 110 is equipped with an expansion section (not shown) that stretches (expands) the sheet T of the supply cleaning section 110 supported by the support section 112 to widen the gap between the electronic components E and also clean any particles in that gap.

[0047] [Mounting Substrate Cleaning Unit] The mounting substrate cleaning unit 120 is a processing chamber that cleans the mounting substrate BW. The mounting substrate cleaning unit 120 uses cleaning liquid L to clean particles remaining on the plasma-treated mounting substrate BW or particles generated by the plasma processing. Similar to the supplier cleaning unit 110 shown in FIG. 9 , the mounting substrate cleaning unit 120 includes a cleaning chamber 111, which is a container in which the cleaning process is performed, a support unit 112 that supports the mounting substrate BW, a rotation mechanism 113 that rotates the support unit 112, a cup 114 that receives the scattering cleaning liquid L from around the mounting substrate BW, and a supply unit 115 that supplies the cleaning liquid L. When DIW, for example, is used as the cleaning liquid L, hydroxyl groups can be added to the surface of the mounting substrate BW in addition to the water cleaning.

[0048] [Adjustment Processing Unit] The adjustment processing unit 130 adjusts the sheet T of the component supply unit TW to reduce the adhesive strength of the sheet T by irradiating it with UV light. As shown in FIG. 1 , the adjustment processing unit 130 has an irradiation device 131 that irradiates the entire area below the accommodated component supply unit TW with UV light by scanning a UV light source.

[0049] [Gauging Unit] The gauging unit 140 positions the component supply unit TW. The gauging unit 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the component supply unit TW so that the center of the component supply unit TW coincides with a reference position set inside.

[0050] [Alignment Unit] The alignment unit 150 positions the mounting substrate BW. The alignment unit 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW coincides with a reference position provided inside.

[0051] [Supplier Buffer Section] The supplier buffer section 160 temporarily stores component suppliers TW before they are carried into the bonding section 180. As shown in FIG. 1 , the supplier buffer section 160 has a storehouse 161 that can store multiple component suppliers TW stacked at intervals.

[0052] [Mounting Board Buffer Section] The mounting board buffer section 170 temporarily stores the mounting boards BW before they are carried into the bonding section 180. The mounting board buffer section 170 has a storage 171 that can store multiple mounting boards BW stacked at intervals.

[0053] [Bonding Section] The bonding section 180 is a processing chamber in which electronic components E are detached from the component supply body TW processed by the plasma processing apparatus 100 and mounted on a mounting substrate BW. The bonding section 180 includes a supply mechanism, a pickup mechanism, and a mounting mechanism (not shown), and the pickup mechanism picks up the electronic component E from the component supply body TW carried into the supply mechanism by the transport section 190, transfers it to the mounting mechanism, and the mounting mechanism mounts it on the mounting substrate BW carried into the mounting mechanism by the transport section 190. Note that the bonding section 180 of this embodiment inverts the picked-up electronic component E and mounts the pre-treated surface on the surface of the mounting substrate BW that has also been pre-treated, as shown in FIG.

[0054] [Transport Unit] The transport unit 190 transports component supply items TW and mounting substrates BW between the load port 11c and each chamber 11b, between each chamber 11b, and between the supply item buffer unit 160, the mounting substrate buffer unit 170, and the bonding unit 180. As shown in FIG. 2 , the transport unit 190 has a transport robot 191 and a movement mechanism 192. The transport robot 191 is of a double-arm type and has a pair of robot hands 191a. The pair of robot hands 191a can support the component supply items TW and mounting substrates BW, respectively. The movement mechanism 192 moves the transport robot 191 and positions it at the load port 11c, each chamber 11b, and the bonding unit 180. The robot hands 191a transport the component supply items TW and mounting substrates BW into and out of each transport container F, each chamber 11b, and the bonding unit 180.

[0055] [Control Unit] The control unit 200 is a computer that controls each unit of the mounting system 1. The control unit 200 has a processor that executes programs, a memory that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. In other words, the control unit 200 controls the plasma processing apparatus 100, the supply body cleaning unit 110, the mounting substrate cleaning unit 120, the adjustment processing unit 130, the gauging unit 140, the alignment unit 150, the supply body buffer unit 160, the mounting substrate buffer unit 170, the bonding unit 180, and the transport unit 190.

[0056] [Operation] The operation of the mounting system 1 of this embodiment as described above will be described with reference to the flowchart in Fig. 10 and the explanatory diagram in Fig. 11 in addition to Figs. 1 to 9 above. A mounting method for mounting an electronic component E on a mounting board BW according to the following procedure is also one aspect of this embodiment. Note that the following description follows the flowchart in Fig. 10, but includes situations in which each process is performed simultaneously in parallel.

[0057] 2, a transport container F containing a component supply TW and a transport container F containing a mounting substrate BW are loaded on the load port 11c. The transport robot 191 receives the component supply TW from the transport container F loaded on the load port 11c and transports the component supply TW to the plasma processing apparatus 100.

[0058] The plasma processing apparatus 100 activates and cleans the surfaces of the electronic components E on the component supply body TW by plasma processing (supply body surface processing step: step S101). That is, as shown in FIGS. 4A to 4C, the shutter SH opens, and the robot hand 191a of the transport robot 191 supporting the component supply body TW is inserted through the loading / unloading port LN to position the component supply body TW above the rod 21a. Note that in FIG. 4A, the rods 21a and 21b are below the mask 50, but are shown with solid lines for ease of understanding. Also, in FIG. 4C, the loading / unloading port LN is shown with a dotted line, and the shutter SH is shown with a dashed line. At this point, the shutter SH moves downward, and the loading / unloading port LN is open.

[0059] Once the component supplier TW is positioned, as shown in Fig. 6(A), the drive mechanism 21c raises the rod 21a to lift the component supplier TW from the robot hand 191a, and the rod 21a receives the component supplier TW from the robot hand 191a. Next, as shown in Fig. 6(B), the robot hand 191a retracts, and the shutter SH closes as shown in Fig. 3. Then, the exhaust device 61 evacuates the chamber 11b to create a vacuum.

[0060] As shown in Fig. 6(C), the driving mechanism 21c lowers the rod 21a to place the component supplier TW on the stage 20. Furthermore, as shown in Fig. 6(D), the driving unit 51 lowers the rod 51a, and the mask 50 is lowered by the biasing force of the biasing member 11g, so that the mask 50 contacts the ring R, covering the ring R and the sheet T (see Fig. 6(A)). At this time, the mask 50 is pressed against the ring R by the biasing force of the biasing member 11g and is stopped. Then, the rod 51a separates from the support axis SA (50a) of the mask 50.

[0061] The lowered mask 50 may be stopped with a gap between it and the ring R, without contacting the ring R. This makes it possible to prevent particles from being generated when the mask 50 comes into contact with the ring R. In this case, the mask 50 is stopped by the stopper 11f or when the support shaft SA (50a) hits the bottom of the hole 11e, leaving a gap between the mask 50 and the ring R.

[0062] In this state, as shown in Fig. 3, the supply device 31 supplies the reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, thereby generating plasma P in the gas space GA. The reactive gas is converted into plasma, generating active species such as ions and radicals, which activate and clean the surfaces of the electronic components E. The reactive gas is exhausted from the exhaust port 60 by the exhaust device 61. In Fig. 3, the release of the active species is indicated by arrows. The active species are released from the plasma P in all directions, but for ease of understanding, the illustration shows the active species directed toward the component supplier TW (as well as the mounting board BW).

[0063] At the same time, the exhaust device 50f shown in FIG. 8 starts exhausting air from the exhaust port 50b. Then, as shown by the arrows in FIG. 11 , most of the active species that have entered the vicinity of the region between the ring R and the electronic component E (the region indicated by the dotted line in the figure) are sucked and removed from the exhaust port 50b before reaching the exposed surfaces of the ring R and the sheet T (the L-shaped portion indicated by the thick line in the figure). Moreover, because the exhaust port 50b opens on the surface facing the sheet T, it does not prevent the active species from contacting the vicinity of the outer edge of the wafer W. Without the exhaust port 50b, the active species that have entered the vicinity of the region between the ring R and the electronic component E would come into contact with the exposed surfaces of the ring R and the sheet T, causing materials from the ring R and the sheet T to scatter and become a source of contamination for the wafer W.

[0064] After the surface treatment of the component supply TW, as shown in FIG. 6(C), the drive unit 51 raises the rod 51a, raising the mask 50 against the biasing force of the biasing member 11g, and separating the mask 50 from the ring R (see FIG. 7). Next, as shown in FIG. 6(B), the drive mechanism 21c raises the rod 21a, thereby lifting the component supply TW. The shutter SH opens, and as shown in FIG. 6(A), the robot hand 191a is inserted through the loading / unloading opening LN. As shown in FIGS. 4(A) to 4(C), the drive mechanism 21c lowers the rod 21a, and the component supply TW is placed on the robot hand 191a and transferred. The robot hand 191a then carries the component supply TW out through the loading / unloading opening LN.

[0065] While the surface treatment of the component supply body TW is being performed, the transport robot 191 receives the mounting substrate BW from the transport container F. The transport robot 191 receives the component supply body TW whose surface treatment has been completed from the rod 21a of the plasma processing apparatus 100, and transfers the mounting substrate BW to the plasma processing apparatus 100. The plasma processing apparatus 100 activates and cleans the surface of the mounting substrate BW by plasma treatment (mounting substrate surface treatment process: step S102).

[0066] The procedure for plasma processing the mounting substrate BW is the same as that for the component supplier TW. However, as shown in Figures 5A and 5B, the mounting substrate BW is supported by rods 21b and moves up and down. The height of the mask 50 is maintained at a distance from the mounting substrate BW by stoppers 11f.

[0067] The transport robot 191 delivers the surface-treated component supply TW to the support unit 112 of the supply cleaning unit 110. The supply cleaning unit 110 rotates the component supply TW using the support unit 112 and the rotation mechanism 113 while supplying cleaning liquid L to clean it (supply cleaning process: step S103). At this time, the sheet T of the supply cleaning unit 110 is expanded by the expander, so that the electronic components E are cleaned with the spacing between them widened. After cleaning by supplying cleaning liquid L, the sheet T is then rotated at high speed to shake off the cleaning liquid L and dry, and the expander releases the sheet T, causing it to contract to its original state, restoring the spacing between the electronic components E to its original state.

[0068] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 100 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 100 and transfers it to the mounting substrate cleaning unit 120. The mounting substrate cleaning unit 120 cleans the mounting substrate BW by supplying cleaning liquid L while rotating the mounting substrate BW (mounting substrate cleaning step: step S104). After cleaning by supplying cleaning liquid L, the mounting substrate BW is dried by rotating at high speed to shake off the cleaning liquid L. This mounting substrate cleaning step includes a state in which it is performed simultaneously with the supply body cleaning step. In other words, the time during which the component supply body TW is cleaned and the time during which the mounting substrate BW is cleaned overlap.

[0069] After the cleaning process of the component supply TW is completed, the transport robot 191 receives the component supply TW from the supply cleaning unit 110 and hands it over to the gauging unit 140. The gauging unit 140 aligns the component supply TW (positioning step: step S105). After the alignment is complete, the transport robot 191 receives the component supply TW from the gauging unit 140 and hands it over to the adjustment processing unit 130. The adjustment processing unit 130 performs an adjustment process to reduce the adhesive strength of the sheet T by irradiating the component supply TW from below with UV light (adjustment step: step S106). These positioning and adjustment steps overlap with the mounting substrate cleaning step.

[0070] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning unit 120 and hands it over to the alignment unit 150. The alignment unit 150 aligns the mounting substrate BW (positioning step: step S107).

[0071] After the adjustment process is completed, the transport robot 191 receives the component supply TW from the adjustment processing unit 130 and hands it over to the supply buffer unit 160. After the alignment of the mounting board BW is completed, the transport robot 191 receives the mounting board BW from the alignment unit 150 and hands it over to the mounting board buffer unit 170.

[0072] In this way, the component supply items TW and the mounting boards BW are accommodated in the supply item buffer section 160 and the mounting board buffer section 170 (accommodation step: step S108), and when the bonding section 180 becomes ready to accept them, the transport robot 191 receives the component supply items TW and the mounting boards BW and hands them over to the bonding section 180. That is, in response to a signal from the bonding section 180 indicating that the processing is complete and the bonding section 180 is ready to accept them, the transport robot 191 removes the component supply items TW and the mounting boards BW from the supply item buffer section 160 and the mounting board buffer section 170 and carries them into the bonding section 180. In the bonding section 180, the electronic components E are picked up from the component supply items TW and mounted on the mounting boards BW (mounting step: step S109).

[0073] After mounting is complete, the component supply unit TW and the mounting board BW are handled as follows: First, the component supply unit TW from which all mountable electronic components E have been picked up, and the mounting board BW from which electronic components E have been mounted in all mounting areas, are both ejected outside the mounting system 1 by another transport robot (not shown). Alternatively, the component supply unit TW and the mounting board BW are returned to the supply unit buffer unit 160 and the mounting board buffer unit 170 by the transport unit 190. Alternatively, the component supply unit TW and the mounting board BW are directly transported by the transport unit 190 to the load port 11c and returned to each transport container F.

[0074] [Effects] (1) The plasma processing apparatus 100 of this embodiment as described above includes a stage 20 on which a component supply body TW is placed, the component supply body TW having wafers W, which have been singulated into electronic components E, attached to a sheet T attached to a ring R, a chamber 11b on which the stage 20 is provided and whose interior can be depressurized, a gas inlet 30 for introducing a reactive gas into the depressurized chamber 11b, a plasma generator 40 for generating active species by plasmatizing the reactive gas, a mask 50 provided in the chamber 11b for exposing the wafer W and for covering the ring R and a portion of the sheet T while being spaced apart from the sheet T, an exhaust port 60 for exhausting the reactive gas from the chamber 11b, and an active species removal unit for removing the active species by negative pressure before they reach a region between the ring R and the electronic components E. For example, the active species removal unit includes an exhaust port 50b provided in the mask.

[0075] In this way, during plasma processing, the exhaust port 50b removes active species from the region including the sheet T between the ring R and the wafer W, thereby suppressing plasma processing of the exposed portion of the sheet T and the ring R. This reduces contamination caused by organic matter constituting the sheet T, organic matter on the surface of the ring R, and metals constituting the ring R scattering and adhering to the wafer W. Furthermore, because the mask 50 is spaced apart from the sheet T, the sheet T is prevented from sticking to the back surface of the mask 50.

[0076] (2) The outlet 50b is open on the surface facing the sheet T. Therefore, the contact of the activated species with the sheet T and the ring R can be prevented without interfering with the contact of the activated species with the vicinity of the outer edge of the wafer W.

[0077] (3) The mask 50 is disposed so as to surround the periphery of the wafer W, and the exhaust ports 50b are provided along the periphery of the wafer W. This promotes the removal of active species from the entire periphery of the wafer W, thereby reducing contamination. In this embodiment, three exhaust ports 50b are provided along the periphery of the wafer W, but as will be described later, the number of exhaust ports 50b is not limited to this.

[0078] (4) The stage 20 is configured so that the component supply body TW and the mounting board BW on which the electronic components E are mounted can be selectively placed thereon. This allows the surface treatment of not only the component supply body TW but also the mounting board BW to be performed using the common plasma processing apparatus 100. This simplifies the mounting system 1. It also prevents the mounting system 1 from becoming too large.

[0079] (5) The stage 20 is provided with a drive unit 21 that raises and lowers the component supply body TW or the mounting board BW. The drive unit 21 has a rod 21a (first rod) on which the component supply body TW that is being transported into and out of the chamber 11b is placed, a rod 21b (second rod) on which the mounting board BW that is being transported into and out of the chamber 11b is placed at a position inside and lower than the component supply body TW, and a drive mechanism 21c that drives the rod 21a and the rod 21b.

[0080] Therefore, when the component supplier TW is carried in and out, the rod 21b does not interfere with the component supplier TW and the robot hand 191a.

[0081] (6) The stage 20 is provided with stoppers 11f that maintain the height (height of the upper surface) of the mask 50 at the same height as when the mounting substrate BW is placed on it, as when the mask 50 covers the component supply TW. This ensures that the upper surface of the mask 50 is the same as when it is in contact with the ring R of the component supply TW. Therefore, when processing the mounting substrate BW, as when processing the component supply TW, active species are removed from near the outer periphery of the mounting substrate BW. That is, active species that attempt to move toward the surface of the stage 20 outside the outer periphery of the wafer W are sucked and removed through the outlet 50b of the mask 50 before coming into contact with the exposed surface of the stage 20. This prevents particles scattered from the surface of the stage 20 from adhering to the mounting substrate BW.

[0082] Furthermore, the stopper 11f can reduce the area of ​​contact between the mask 50 and the stage 20, thereby suppressing the generation of particles due to contact.

[0083] [Modifications] The plasma processing apparatus 100 of this embodiment as described above can also be configured as the following modifications.

[0084] (1) As shown in Fig. 12(A) which is a perspective view of the bottom side of the mask 50, Fig. 12(B) which is a bottom view, and Fig. 12(C) which is a cross-sectional view taken along the line c-c in Fig. 12(B), the outlet 50b may be open to the bottom surface of a cylindrical portion extending from the mask 50 toward the sheet T. This makes it difficult for the active species to reach the sheet T, and enables the active species to be removed from a position closer to the sheet T.

[0085] Furthermore, as shown in Fig. 13(A) , which is a bottom perspective view of the mask 50, Fig. 13(B) , which is a bottom view, and Fig. 13(C) , which is a cross-sectional view taken along the line dd in Fig. 13(B) , the mask 50 may be configured so that it is supported by a support tube 50g, which is a continuous cylindrical portion, instead of a plurality of support shafts 50a. Note that Figs. 12 and 13 illustrate the features of the modified example and do not necessarily show all the configurations. For example, configurations that indicate biasing are not shown.

[0086] The number of discharge ports 50b may be one or more. However, as shown in the bottom view of FIG. 14(A), three or more (15 in the figure) are preferably arranged at equal intervals along the periphery of the wafer W. As shown in FIG. 14(B), a cross-sectional view taken along the arrows e-e in FIG. 14(A), a ring-shaped communication path 50h that connects the multiple discharge paths 50c inside the mask 50 may be provided, and a ring-shaped lid 50i with multiple discharge ports 50b may be attached to the lower end of the communication path 50h. By providing the communication path 50h, suction can be performed along the entire circumference of the wafer W regardless of the number of discharge paths 50c. Furthermore, as shown in the bottom view of FIG. 14(C), the discharge port 50b may be slit-shaped and extend along the periphery of the wafer W. In this case, a slit-shaped discharge port 50b that communicates with the lower end of the communication path 50h may be provided, as shown in FIG. 14(D), a cross-sectional view taken along the arrows f-f in FIG. 14(C). This allows suction to be performed around the entire circumference of the wafer W. Note that Fig. 14 shows the features of the modified example and does not necessarily show all of the configurations. For example, configurations that indicate biasing are not shown.

[0087] (2) As shown in FIG. 15A, the exhaust port 50b may be open on the surface (side surface) of the mask 50 facing the center of the wafer W. This allows the activated species to be removed before they reach the sheet T and the ring R. As shown in FIG. 15B, an exhaust port 50b, such as a slit, may be provided near the inner diameter of the upper surface of the mask 50, and exhaust may be performed through this exhaust port 50b. Note that multiple exhaust ports 50b or slit-shaped exhaust ports 50b, as exemplified in FIG. 14, may be provided so as to open on the surface facing the center of the wafer W. Of course, a communication path 50h may also be provided. The surface facing the center of the wafer W, more specifically, refers to the inner opening side surface of the ring-shaped mask 50, facing the center of the wafer W.

[0088] (3) As shown in FIG. 16 , multiple exhaust ports 60 may be provided. This allows exhaust from multiple locations and multiple directions, improving overall exhaust efficiency and facilitating the removal of active species. In this case, it is preferable to provide multiple exhaust ports 60 in accordance with the shape of the chamber 11b so that exhaust is evenly distributed from the outer periphery of the stage 20 outward. This allows exhaust from the multiple exhaust ports 60 to be distributed radially outward from the wafer W on the stage 20 as the center, further improving overall exhaust efficiency and facilitating the removal of active species from above the mask 50, i.e., above the exposed portions of the ring R and sheet T. Furthermore, since the removal of active species is performed around the entire circumference of the wafer W and uneven distribution is suppressed, the effects of active species on the exposed portions of the sheet T and the ring R are suppressed around the entire circumference of the wafer W. Of course, similar effects can be achieved even when the shape of the chamber 11b is similar to the outer shape of the wafer W and multiple exhaust ports 60 are evenly distributed around the outer periphery of the stage 20. The exhaust port 60 may be provided on the side surface of the chamber 11b as shown in Fig. 3, or on the top surface or bottom surface of the chamber 11b as shown in Fig. 16. In either case, the exhaust port 60 may be provided in multiple locations.

[0089] (4) As shown in Figures 17(A), (B), (C), 18, 19(A), (B), (C), and 20, the drive mechanism 51b may be common to the drive mechanism 21c. In other words, rods 21a, 21b, and 51a of different lengths can be moved by the common drive mechanism 21c. This simplifies the structure.

[0090] Fig. 17 shows an example in which a stopper 11f is provided. Fig. 17 shows an example in which a component supply unit TW is raised and lowered. Fig. 17(A) shows a state in which the component supply unit TW is supported by rods 21a at a distance from the stage 20, Fig. 17(B) shows a state in which the component supply unit TW is in contact with the stage 20 while the mask 50 is still in the middle of raising and lowering, and Fig. 17(C) shows a state in which the component supply unit TW is placed on the stage 20 and the mask 50 is also in contact with the component supply unit TW and is stopped.

[0091] When placing the component supply TW on the stage 20, the drive mechanism 21c lowers the rods 21a and 51a from the state shown in FIG. 17(A), starting the descent of the component supply TW and the mask 50. First, the component supply TW is placed in contact with the stage 20, resulting in the state shown in FIG. 17(B). The mask 50 then lowers and contacts the ring R, resulting in the state shown in FIG. 17(C). When removing the component supply TW from the stage 20, the drive mechanism 21c raises the rod 51a from the state shown in FIG. 17(C), as shown in FIG. 17(B), and first hits the mask 50, causing the mask 50 to begin to rise. Next, the rod 21a rises and hits the component supply TW, causing the component supply TW to rise following the mask 50, resulting in the state shown in FIG. 17(A). The lengths of the rods 51a and 21a are set so that the mask 50 and the component supply TW can be raised and lowered in this manner.

[0092] Here, the operation for the component supplier TW is shown, but the same applies to the mounting board BW. In this case, rod 21b raises and lowers the mounting board BW. When the mounting board BW is lowered, rod 21b moves away from the mounting board BW first, and then rod 51a moves away from the mask 50. When the mounting board BW is raised, rod 51a hits the mask 50 first, and then rod 21b hits the mounting board BW. The lengths of rod 51a and rod 21b are set so that this occurs. Figure 18 shows a state in which the mounting board BW is placed on the stage 20 and the mask 50 has stopped by hitting stopper 11f.

[0093] Fig. 19 shows an example in which there is no stopper 11f. Fig. 19 shows an example in which the mounting substrate BW is raised and lowered. Fig. 19(A) shows a state in which the mounting substrate BW is supported by rods 21b at a distance from the stage 20, Fig. 19(B) shows a state in which the mounting substrate BW is in contact with the stage 20 but the mask 50 is in the middle of raising and lowering, and Fig. 19(C) shows a state in which the mounting substrate BW is placed on the stage 20 and the mask 50 is also in contact with the stage 20 and is stopped.

[0094] When the mounting substrate BW is placed on the stage 20, the drive mechanism 21c lowers the rods 21b and 51a from the state shown in FIG. 19A, thereby starting the descent of the mounting substrate BW and the mask 50. First, the mounting substrate BW is placed in contact with the stage 20, resulting in the state shown in FIG. 19B. Subsequently, the mask 50 is lowered and contacts the stage 20, resulting in the state shown in FIG. 19C. When the mounting substrate BW is removed from the stage 20, the drive mechanism 21c raises the rod 51a from the state shown in FIG. 19C, as shown in FIG. 19B, and first hits the mask 50, causing the mask 50 to begin to rise. Next, the rod 21b rises and hits the mounting substrate BW, causing the mounting substrate BW to rise following the mask 50, resulting in the state shown in FIG. 19A. The lengths of the rods 51a and 21b are set so that the mask 50 and the mounting substrate BW can be raised and lowered in this manner.

[0095] Here, the operation for the mounting board BW is shown, but the same applies to the component supplier TW. In this case, the rod 21a raises and lowers the component supplier TW. When the component supplier TW is lowered, the rod 21a first separates from the component supplier TW, and then the rod 51a separates from the mask 50. When the component supplier TW is raised, the rod 51a first hits the mask 50, and then the rod 21a hits the component supplier TW. The lengths of the rods 51a and 21a are set so that this occurs. Figure 20 shows a state in an example without the stopper 11f, in which the component supplier TW is placed on the stage 20 and the mask 50 has hit the ring R and stopped.

[0096] In this way, the stopper 11f does not need to be provided. In this case, since the mask 50 is in contact with the surface of the stage 20, the active species do not reach the surface of the stage 20. However, there is a concern that particles may be generated due to contact between the mask 50 and the stage 20. For this reason, it is preferable to prevent the contact portion of the mask 50 and the stage 20 from becoming a source of contamination for the wafer W by, for example, performing a surface treatment that is high in hardness and makes it difficult for particles to be generated due to contact. Furthermore, in the case of the mounting substrate BW, suction from the exhaust port 50b does not need to be performed. Since the exposed portion of the stage 20 is almost completely blocked by the mask 50, almost no particles are generated from the stage 20 due to the active species. Therefore, contamination of the mounting substrate BW is suppressed even without suction using the mask 50.

[0097] In addition, regardless of whether or not stopper 11f is present, if drive mechanism 51b and drive mechanism 21c are provided separately, by controlling the timing of operation rather than the lengths of rods 51a, 21a, and 21b, rod 51a can be made to contact mask 50 before rods 21a or 21b.

[0098] 21, instead of the stopper 11f provided in the chamber 11b, the bottom surface of the hole 11e may function as the stopper. In this case, the mask 50 does not come into direct contact with the stage 20, so no particles are generated due to contact.

[0099] In the above embodiment, the rod 21a (first rod) on which the TW is placed and the rod 21b (second rod) on which the mounting board BW is placed are arranged such that the rod 21b is located inside and lower than the component supplier TW, but the heights of the rod 21a (first rod) and the rod 21b (second rod) may be the same. In this case, the wafer as well as the ring R are supported at the same height, so no load is applied to the sheet T, and deformation of the sheet T can be suppressed.

[0100] (5) In the above embodiment, the plasma processing apparatus 100 is an inductively coupled plasma apparatus using an antenna, but is not limited to such an apparatus. It may be a capacitively coupled plasma apparatus using AC application with the stage 20 as an electrode, or may be an apparatus using DC application. In other words, various plasma sources can be used as long as they are capable of generating activated species.

[0101] (6) In the above embodiment, the mask 50 is raised and lowered from below. However, it may be raised and lowered from above. For example, as shown in FIG. 22, a rod 51c that moves up and down may raise and lower the mask 50 via the upper part of the chamber 11b. The rod 51c is raised and lowered by a drive unit (not shown). The lowered position of the mask 50 is determined by a stopper 51d provided on the rod 51c. The raised position of the mask 50 is above the height of the loading / unloading port LN. This embodiment is an example in which the stage 20 serves as an electrode, and the chamber 11b is evacuated through an exhaust port 60 provided on the lower surface of the chamber 11b.

[0102] (7) In the above embodiment, the plasma processing apparatus 100 is configured to process both the component supply body TW and the mounting board BW. However, this is not limited thereto, and the mounting system 1 may be configured with a separate plasma processing apparatus dedicated to processing the component supply body TW and a separate plasma processing apparatus dedicated to processing the mounting board BW. This allows both plasma processes to be performed in parallel, thereby improving productivity. Furthermore, because each is a dedicated plasma processing apparatus, the control of transporting the component supply body TW and the mounting board BW is simple, and a complex transport control program is not required. Furthermore, there is no need to manage whether the plasma processing apparatus is currently processing the component supply body TW or the mounting board BW. This also allows for a simple control program, resulting in cost reduction.

[0103] (8) In the above embodiment, the mounting system 1 has one bonding unit 180 in the mounting unit Y, but this is not limiting. As shown in Fig. 23, the mounting system 1 may have a plurality of bonding units 180. The number of bonding units 180 can be determined according to the takt time determined from the component supplier TW, the size of the mounting board BW, the required processing time, etc., and increasing the number of bonding units can improve efficiency.

[0104] In this way, when there are multiple bonding units 180, a separate transport device 190α may be provided to distribute the component supplies TW and mounting boards BW to each bonding unit 180. Also, a dedicated transport device 190β may be provided in the load port 11c. A dedicated transport device 190α may be provided for multiple bonding units 180. Note that a single transport unit 190 may distribute the component supplies TW and mounting boards BW to each bonding unit 180.

[0105] (9) The bonding unit 180 may be a separate unit, and the pre-treatment device (pre-treatment unit X) may not include the bonding unit 180. The pre-treatment device may include the load port 11c, the plasma treatment device 100, the supply body cleaning unit 110, the mounting substrate cleaning unit 120, and the transport unit 190.

[0106] For example, as shown in FIG. 24 , the pre-processing apparatus is configured with a load port 11c, a plasma processing apparatus 100, a supply cleaning unit 110, a mounting substrate cleaning unit 120, an adjustment processing unit 130, a gauging unit 140, an alignment unit 150, a supply buffer unit 160, a mounting substrate buffer unit 170, a transport unit 190, and a control unit 200. The supply buffer unit 160 and the mounting substrate buffer unit 170 may be load ports for supplying component supply units TW and mounting substrates BW to the bonding apparatus. The supply buffer unit 160 and the mounting substrate buffer unit 170 may also be provided in the bonding apparatus. The component supply units TW and mounting substrates BW may be transported between the pre-processing apparatus and the bonding apparatus by a transport device (not shown) via the supply buffer unit 160, the mounting substrate buffer unit 170, and the load port. In this way, by separating the bonding apparatus from the pre-processing apparatus, flexibility in placement within the factory is achieved. Furthermore, the number of bonding devices can be increased or decreased depending on the required takt time.

[0107] The control unit 200 may control both the pre-processing device and the bonding device provided separately therefrom, or separate control units may be provided for each.

[0108] (10) As an active species removal unit that removes active species by negative pressure, a partition wall may be provided between the gas inlet 30 and the exhaust port 60 in the chamber 11b, and arranged adjacent to and along the mask 50 with a gap therebetween. "Along the mask 50" means that the partition wall is arranged so as to surround the space above the region where the wafer W is surrounded by the mask 50. For example, as shown in FIG. 25, a partition wall 70 is provided in the chamber 11b.

[0109] The partition wall 70 is interposed between the gas inlet 30 and the exhaust port 60 in the chamber 11b and is disposed adjacent to the mask 50 with a gap therebetween so as to remove activated species from the vicinity of the outer periphery of the wafer W. In this embodiment, the partition wall 70 is cylindrical with an opening facing the stage 20. The inner diameter of the partition wall 70 is equal to or greater than the outer diameter of the wafer W. However, the horizontal bottom surface (opening surface) of the partition wall 70 is preferably sized to overlap the horizontal upper surface of the mask 50 with a gap therebetween in a plan view, thereby narrowing the exhaust path. The partition wall 70 is preferably made of a material with a low sputtering rate due to the plasma P, such as quartz, or by subjecting SUS to a plasma-resistant surface treatment such as an yttria coating to prevent it from becoming a source of contamination for the wafer W. The partition wall 70 is connected to the gas inlet 30 via a pipe, and a reactive gas is supplied into the partition wall 70, forming a gas space GA inside the partition wall 70 and above the stage 20.

[0110] The supply device 31 supplies a reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, thereby generating plasma P in the gas space GA. The reactive gas is converted into plasma, generating active species such as ions and radicals, which activate and clean the surfaces of the electronic components E. The reactive gas is exhausted from the exhaust port 60 by the exhaust device 61, but as shown by the arrows in FIG. 26 , its flow rate increases in the gap between the partition wall 70 and the mask 50. Therefore, the active species that tend to move toward the vicinity of the outer periphery of the wafer W, i.e., the vicinity between the ring R and the electronic components E (the region indicated by the dotted line in the figure), are sucked in and removed through the gap between the partition wall 70 and the mask 50 before coming into contact with the ring R and the exposed surface of the sheet T (the portion indicated by the thick L in the figure). Furthermore, if the partition wall 70 were not present, the activated species would move toward the vicinity between the ring R and the electronic component E and come into contact with the exposed surfaces of the ring R and the sheet T, causing the materials of the ring R and the sheet T to scatter and become a source of contamination for the wafer W.

[0111] In this way, exhaust from the gap between the mask 50 and the partition wall 70 arranged adjacent to the mask 50 with a gap therebetween promotes exhaust from between the mask 50 and the partition wall 70, and active species are removed from the region including the sheet T between the ring R and the wafer W, thereby suppressing plasma processing of the exposed portion of the sheet T and the ring R. This reduces contamination caused by organic matter constituting the sheet T, organic matter on the surface of the ring R, and metals constituting the ring R scattering and adhering to the wafer W. Furthermore, because the mask 50 is spaced apart from the sheet T, the sheet T is prevented from sticking to the back surface of the mask 50.

[0112] Active species heading toward the surface of the stage 20 outside the outer periphery of the wafer W are sucked and removed through the gap between the partition wall 70 and the mask 50 before coming into contact with the exposed surface of the surface of the stage 20. This makes it possible to prevent particles scattering from the surface of the stage 20 from adhering to the mounting substrate BW.

[0113] The partition wall 70 is cylindrical with an opening on the side facing the stage 20, and is therefore positioned closely around the entire circumference of the mask 50, which promotes the removal of active species around the entire circumference of the wafer W and reduces contamination.

[0114] In the above embodiment, the partition wall 70 is provided continuous with the ceiling of the chamber 11b, but it may be provided independently from the ceiling inside the chamber 11b as shown in Fig. 27. In this case, the partition wall 70 is cylindrical with a closed top, and a window member 11d is provided on the top surface, with the antenna 41 provided above the window member 11d.

[0115] 28 , multiple exhaust ports 60 may be provided. This allows exhaust to be performed from multiple locations and multiple directions, thereby improving overall exhaust efficiency and facilitating the removal of activated species. In this case, it is preferable that multiple exhaust ports 60 are arranged based on the shapes of the chamber 11b and the partition wall 70, or based on the shapes of the chamber 11b or the partition wall 70. That is, when the chamber 11b and the partition wall 70 have shapes similar to the outer shape of the stage 20, it is preferable that the exhaust ports 60 are arranged along the shapes of the chamber 11b and the partition wall 70. When the chamber 11b and the partition wall 70 do not have shapes similar to the outer shape of the stage 20, it is preferable that the exhaust ports 60 are arranged along the shapes of either the chamber 11b or the partition wall 70.

[0116] Furthermore, it is more preferable to arrange a plurality of exhaust ports 60 in accordance with the shape of the chamber 11b and the shape of the partition wall 70 so that exhaust is evenly distributed from the outer periphery of the stage 20 outward. This allows exhaust from the plurality of exhaust ports 60 to radiate outward from the wafer W on the stage 20 as the center, thereby further improving overall exhaust efficiency and facilitating the removal of active species. Furthermore, the removal of active species is performed around the entire circumference of the wafer W, preventing uneven distribution. This prevents plasma processing of the exposed portion of the sheet T and the ring R around the entire circumference of the wafer W. Therefore, when the shape of the chamber 11b and the shape of the partition wall 70 are similar to the outer shape of the wafer W, the same effect can be achieved even when a plurality of exhaust ports 60 are arranged evenly around the outer periphery of the stage 20. Furthermore, a plurality of exhaust ports 60 may be provided along the periphery of the partition wall 70. This allows the active species to be evenly distributed around the entire circumference of the wafer W. Note that "along the periphery of the partition wall 70" may refer to any position that surrounds the outer periphery of the partition wall 70 in the chamber 11b, and may be the ceiling, sidewall, or bottom surface of the chamber 11b.

[0117] In the above embodiment, the partition wall 70 is fixedly provided within the chamber 11b. However, as shown in FIG. 29 , the partition wall 70 may be provided to be movable up and down from the top of the chamber 11b by a drive mechanism 71. In this case, the partition wall 70 waits at a position higher than the loading / unloading port LN when loading / unloading a component supply. During plasma processing, the partition wall 70 approaches the mask 50 as indicated by the dashed line in the figure, thereby narrowing the gap with the mask 50 and promoting the discharge of activated species from near the top of the mask 50. Alternatively, as shown in FIG. 30 , the mask 50 and the partition wall 70 may be provided to be movable up and down together from the top of the chamber 11b by a drive mechanism 71. In this way, by integrating the up and down movements of the mask 50 and the partition wall 70, the drive mechanism 71 can be simplified. Furthermore, the number of drive rods inserted into the chamber 11b can be reduced, making it easier to maintain the chamber 11b airtight.

[0118] [Other Embodiments] While the embodiments of the present invention and modifications of each part have been described above, these embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included within the scope and spirit of the invention, and are also included in the invention described in the claims.

[0119] 1 Mounting system 11a Base 11b Chamber 11c Load port 11d Window member 11e Hole 11f Stopper 11g Biasing member 11h, 11i Spring post 20 Stage 21 Drive unit 21a Rod 21b Rod 21c Drive mechanism 30 Gas inlet 31 Supply device 31a Pipe 40 Plasma generator 41 Antenna 42 Power supply 43 Matching box 50 Mask 50a Support shaft 50b Discharge port 50c Discharge path 50d Discharge hole 50e Pipe 50f Exhaust device 50g Support cylinder 50i Lid 51 Drive unit 51a, 51c Rod 51b Drive mechanism 51d Stopper 60 Exhaust port 61 Exhaust device 61a Pipe 70 Partition 71 Drive mechanism 100 Plasma processing apparatus 110 Supply body cleaning section 111 Cleaning chamber 111a Opening 111b Shutter 112 Support section 113 Rotation mechanism 114 Cup 115 Supply section 115a Nozzle 115b Movement mechanism 120 Mounting substrate cleaning section 130 Adjustment processing section 131 Irradiation device 140 Gauging section 150 Alignment section 160 Supply body buffer section 161 Storage 170 Mounting substrate buffer section 171 Storage 180 Bonding section 190 Transport section 191 Transport robot 191a Robot hand 192 Movement mechanism 200 Control section TW Component supply body BW Mounting substrate

Claims

1. A plasma processing apparatus comprising: a stage on which a component supply body is placed, the component supply body having a wafer diced into electronic components attached to a sheet attached to a ring; a chamber in which the stage is provided and the inside of which can be depressurized; a gas inlet for introducing a reactive gas into the depressurized chamber; a plasma generator for generating active species by turning the reactive gas into plasma; a mask provided in the chamber for exposing the wafer and for covering the ring and a portion of the sheet while being spaced apart from the sheet; an exhaust port for exhausting the reactive gas from within the chamber; and an active species removal unit for removing the active species by negative pressure before the active species reach a region between the ring and the electronic components.

2. The plasma processing apparatus according to claim 1, wherein said active species removal section has an outlet provided in said mask.

3. A plasma processing apparatus according to claim 1, wherein said active species removal section has an outlet opening on a surface of said mask facing said sheet.

4. The plasma processing apparatus according to claim 1, wherein the active species removal section has an exhaust port provided in the mask, the exhaust port opening in a surface facing the center of the wafer.

5. The plasma processing apparatus according to claim 1, characterized in that the mask is arranged to surround the wafer, the active species removal section has an exhaust port provided in the mask, and the exhaust port is provided along the periphery of the wafer.

6. A plasma processing apparatus as claimed in claim 1, characterized in that the active species removal section has a partition wall interposed between the gas inlet and exhaust port in the chamber and positioned adjacent to and with a gap along the mask.

7. A plasma processing apparatus as described in claim 1, characterized in that the active species removal section has a cylindrical partition wall with an open side facing the stage, interposed between the gas inlet and exhaust port in the chamber and positioned adjacent to and with a gap along the mask.

8. The plasma processing apparatus according to claim 6, wherein a plurality of exhaust ports are provided based on the shape of the chamber and / or the partition wall.

9. A plasma processing apparatus according to claim 1, wherein a plurality of said exhaust ports are disposed at equal intervals in the circumferential direction of the outer periphery of said stage.

10. The plasma processing apparatus according to claim 6, wherein a plurality of said exhaust ports are provided along the periphery of said partition wall.

11. The plasma processing apparatus according to claim 1, wherein said stage is provided so that said component supply body and a mounting board on which said electronic components are to be mounted can be selectively placed thereon.

12. The plasma processing apparatus according to claim 1, characterized in that the stage is arranged to be capable of selectively placing the component supply body and a mounting board on which the electronic components are mounted, and has a drive unit that raises and lowers the component supply body or the mounting board on the stage, the drive unit having: a first rod on which the component supply body is placed when it is transported into and out of the chamber; a second rod on which the mounting board when it is transported into and out of the chamber is placed, at a position inside and lower than the component supply body; and a drive mechanism that drives the first rod and the second rod.

13. A plasma processing apparatus as described in claim 1, characterized in that the stage is configured to selectively place the component supply body and a mounting board on which the electronic components are mounted, and the stage is provided with a stopper that maintains the height of the mask at the same height as when the mask covers the component supply body when the mounting board is placed on the stage.

14. A pre-processing device comprising: a plasma processing device according to any one of claims 1 to 13; a load port on which a transport container containing the component supply is mounted; a supply cleaning section for cleaning the component supply; a mounting substrate cleaning section for cleaning the mounting substrate; and a transport section for transporting the component supply.

15. A mounting system comprising: a pre-treatment device according to claim 14; and a bonding section which detaches the electronic components from the component supply body which has been treated by the plasma treatment device, and mounts the electronic components on a mounting board.

16. A mounting system comprising: a plasma processing apparatus according to any one of claims 1 to 13; and a bonding section which detaches the electronic component from the component supply body which has been processed by the plasma processing apparatus, and mounts the electronic component on a mounting substrate.

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