Semiconductor apparatus and manufacturing method therefor

Abstract

Provided in the present application are a semiconductor apparatus and a manufacturing method therefor. The semiconductor apparatus comprises: a substrate (1); a through hole (4), which runs through the substrate in a thickness direction; a first polymer layer (2), which at least continuously covers an inner wall of the through hole (4); a first conductor layer (3), which at least continuously covers an inner wall of the first polymer layer (2); and a first electrode (6), which is formed on a first surface of the substrate, wherein the first electrode is electrically connected to the first conductor layer (3).

Description

Semiconductor device and method for manufacturing the same Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a semiconductor device and a manufacturing method thereof. Background Art

[0002] In 2.5D and 3D packaging processes, a layer of silicon dioxide is usually deposited in the through-hole as an insulating layer. However, as the aspect ratio of the through-hole continues to increase, the effect of PECVD (plasma-enhanced chemical vapor deposition) depositing silicon dioxide will also deteriorate, manifested in poor uniformity of the through-hole sidewall film thickness, poor coverage of the through-hole sidewall with the chip surface, and poor adhesion of the through-hole bottom sidewall. If the deposited silicon dioxide film thickness is too thick, stress problems will cause cracks in the film. If the deposited silicon dioxide film thickness is too thin, it will cause leakage on the bottom sidewall of the through-hole. Although using PE-ALD (plasma-enhanced atomic layer deposition) to deposit silicon dioxide can ensure the coverage of the chip surface and the through-hole sidewall, the cost of each piece is high.

[0003] In addition, whether PECVD or PE-ALD is used to deposit silicon dioxide films, a process temperature greater than 400°C must be used to grow high-quality film layers. However, high temperatures greater than 400°C will cause some chip functions, structures or previous process packaging structures to be damaged. For example, the CTE (coefficient of thermal expansion) of adjacent hierarchical structural materials in the previous layer is quite different, which will cause faults at high temperatures and cause functional failures, resulting in a lower yield rate of the prepared integrated circuits and increased costs.

[0004] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art.

[0005] Summary of the Invention

[0006] In order to solve the above problems or at least similar problems, the present application provides a semiconductor device and a method for manufacturing the same. In the semiconductor device, the side walls of the through hole are covered with a polymer, which can improve the coverage, play a good buffering and barrier role, and improve the reliability of the semiconductor device. In addition, high-temperature treatment is avoided during the setting of the polymer, thereby improving the product yield and reducing costs.

[0007] An embodiment of the present application provides a semiconductor device, comprising:

[0008] substrate 1;

[0009] a through hole 4, which penetrates the substrate in the thickness direction;

[0010] a first polymer layer 2, which continuously covers at least the inner wall of the through hole 4;

[0011] a first conductor layer 3 , which continuously covers at least the inner wall of the first polymer layer 2 ; and

[0012] The first electrode 6 is formed on the first surface of the substrate, and is electrically connected to the first conductor layer 3 .

[0013] In at least one embodiment, the first polymer layer 2 further covers at least a portion of the second surface of the substrate.

[0014] In at least one embodiment, the first conductor layer 3 further at least partially covers the surface of the first polymer layer 2 located on the second surface.

[0015] In at least one embodiment, the semiconductor device further includes:

[0016] A second polymer layer 7 covers at least a portion of the first surface of the substrate.

[0017] In at least one embodiment, the semiconductor device further includes:

[0018] The second conductor layer 9 is located on the surface of the second polymer layer 7 , and the second conductor layer 9 is electrically connected to the first electrode 6 .

[0019] An embodiment of the present application provides a method for manufacturing a semiconductor device, the method comprising:

[0020] At least a first electrode 6 is formed on the first surface of the substrate 1;

[0021] Applying bonding glue 10 on one side of the first surface of the substrate, applying photosensitive glue on the surface of a transparent support sheet 11, and bonding the substrate and the support sheet through the bonding glue and the photosensitive glue;

[0022] Etching the substrate from the second surface of the substrate to form a through hole 4 penetrating the substrate in the thickness direction, with the first electrode 6 exposed from the bottom of the through hole 4;

[0023] filling the through-holes with a polymer dry film;

[0024] Performing a windowing process on the polymer dry film in the through hole 4 to form a first polymer layer 2 that continuously covers at least the inner wall of the through hole 4, wherein the inner periphery of the first polymer layer 2 has a through window 12, and the first electrode 6 is exposed from the bottom of the through window 12;

[0025] forming a first conductor layer 3 on the inner wall of the through window, which continuously covers at least the inner wall of the first polymer layer 2, and the first conductor layer 3 is in contact with the first electrode 6; and

[0026] The photosensitive adhesive is irradiated with light having a predetermined wavelength through the support sheet to separate the bonding adhesive from the photosensitive adhesive.

[0027] In at least one embodiment, before bonding the substrate and the support sheet, a second polymer layer 7 and a second conductor layer 9 are formed on the first surface of the substrate.

[0028] The second conductor layer 9 is located on the surface of the second polymer layer 7 , and the second conductor layer 9 is electrically connected to the first electrode 6 .

[0029] In at least one embodiment, the polymer dry film further covers at least a portion of the second surface of the substrate.

[0030] In at least one embodiment, the first conductor layer 3 further at least partially covers the surface of the first polymer layer 2 located on the second surface.

[0031] In at least one embodiment, the polymer dry film is filled into the through hole by vacuum lamination.

[0032] The beneficial effects of the present application are as follows: using polymer to cover the sidewalls of the through hole can improve coverage, play a good buffering and barrier role, and improve the reliability of the semiconductor device. In addition, high-temperature treatment is avoided during the process of setting the polymer, thereby improving the product yield and reducing costs.

[0033] With reference to the following description and accompanying drawings, specific embodiments of the present application are disclosed in detail, indicating the manner in which the principles of the present application can be employed. It should be understood that the embodiments of the present application are not limited in scope. Within the spirit and scope of the appended claims, the embodiments of the present application include many variations, modifications and equivalents.

[0034] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0035] It should be emphasized that the term "include / comprising" when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without inventive work. In the drawings:

[0037] FIG1 is a schematic diagram of a semiconductor device according to Embodiment 1 of the present application;

[0038] FIG2 is a schematic diagram of a method for manufacturing a semiconductor device according to Embodiment 2 of the present application;

[0039] 3 to 6 are schematic cross-sectional views of devices corresponding to the main steps of an example of Embodiment 2 of the present application. DETAILED DESCRIPTION

[0040] The methods and applications of the present invention will be described in further detail below with reference to specific examples. It should be understood that the following examples are intended only to illustrate and explain the present invention and should not be construed as limiting the scope of protection of the present invention. All technologies implemented based on the above content of the present invention are encompassed within the scope of protection intended by the present invention.

[0041] In the various embodiments of the present application, the direction parallel to the surface of the substrate 1 is referred to as the transverse direction, and the direction perpendicular to the surface of the substrate 1 is referred to as the longitudinal direction, or the thickness direction. The first surface of the substrate 1 may be the front surface, and the second surface of the substrate 1 may be the back surface.

[0042] Unless otherwise specified, the raw materials and reagents used in the following examples are commercially available or can be prepared by known methods.

[0043] Example 1

[0044] Embodiment 1 of the present application provides a semiconductor device.

[0045] FIG1 is a schematic diagram of a semiconductor device according to an embodiment of the present application. As shown in FIG1 , the semiconductor device 100 comprises at least: a substrate 1 , a through hole 4 , a first conductor layer 3 , a first polymer layer 2 and a first electrode 6 .

[0046] In this embodiment, the substrate 1 can be a substrate commonly used in the field of semiconductor manufacturing, such as a silicon wafer, a silicon-on-insulator (SOI) wafer, a silicon-germanium wafer, a germanium wafer or a gallium nitride (GaN) wafer, etc., or it can be a glass substrate, a sapphire substrate, etc. This embodiment is not limited to the above examples.

[0047] As shown in FIG1 , the through hole 4 may penetrate the substrate 1 in the thickness direction, for example, the through hole 4 is a through silicon via (TSV), and the depth of the through hole 4 is, for example, greater than 50 μm or other values.

[0048] The first polymer layer 2 continuously covers at least the inner wall of the through hole 4, thereby achieving good insulation properties on the sidewalls of the through hole 4. In addition, the first polymer layer 2 may also cover at least a portion of the back surface (ie, the second surface) of the substrate 1.

[0049] The first conductor layer 3 continuously covers at least the inner wall of the first polymer layer 2. In addition, the first conductor layer 3 also at least partially covers the surface of the first polymer layer 2 located on the second surface.

[0050] The first electrode 6 is formed on the front side (ie, the first surface) of the substrate 1 , and the first electrode 6 contacts the first conductor layer 3 covering the inner wall of the first polymer layer 2 , thereby achieving electrical connection.

[0051] As shown in FIG1 , semiconductor device 100 further includes a second polymer layer 7 and a second conductor layer 9 . Second polymer layer 7 covers the first surface (i.e., the front surface) of substrate 1 . Second conductor layer 9 is located on the surface of second polymer layer 7 and is electrically connected to first electrode 6 .

[0052] The first conductor layer 3 , the first electrode 6 , and the second conductor layer 9 may be made of the same or different conductor materials. For example, the first conductor layer 3 , the first electrode 6 , and the second conductor layer 9 are all made of metal, such as copper or aluminum.

[0053] The first polymer layer 2 and the second polymer layer 7 can be photolithographic polymer materials. In addition, the first polymer layer 2 and the second polymer layer 7 can be the same material or different materials.

[0054] As shown in FIG1 , adjacent semiconductor devices 100 can be connected to each other with a front scribe groove 8 and a back scribe groove 5 formed on a substrate 1 therebetween. The front scribe groove 8 and the back scribe groove 5 correspond in position with a deviation of less than 2 μm. By performing a scribing operation along the front scribe groove 8 and / or the back scribe groove 5, the adjacent semiconductor devices 100 can be separated.

[0055] In addition, the semiconductor device 100 may also have other structures, such as: input / output bumps (I / O bumps) or input / output pads (I / O pads) formed on the first surface or the second surface of the substrate 1; and / or, other logic chips, digital chips, micro-electromechanical systems (MEMS) chips or combinations thereof stacked on the semiconductor device 100.

[0056] In the semiconductor device 100 of the present application, the diameter of the window of the polymer layer 2 on the back surface of the substrate 1 can be 5um or more, and the thickness can be 2um to 10um. The subsequent packaging wiring (RDL) thickness, width and density design window are large and the process window is large, which is not likely to cause polymer film fracture; the first polymer layer 2 on the side wall of the through hole 4 mainly plays the role of buffering and blocking. The thickness of the first polymer layer 2 on the side wall of the entire through hole 4 is uniform and dense, and the thickness can be adjusted according to the photolithography design, which has greater flexibility and is not affected by the roughness of the side wall of the through hole 4. The process is simple, the cost is low, and the finished product yield is high; in addition, the portion of the first polymer layer 2 located on the back surface of the substrate 1 can play the role of support, buffering, and blocking.

[0057] Example 2

[0058] Embodiment 2 of the present application provides a method for manufacturing a semiconductor device, which is used to manufacture the semiconductor device 100 described in Embodiment 1.

[0059] FIG2 is a schematic diagram of a method for manufacturing a semiconductor device according to Embodiment 2 of the present application. As shown in FIG2 , the manufacturing method includes:

[0060] Operation 201: forming at least a first electrode 6 on a first surface of a substrate 1;

[0061] Operation 202: Apply bonding adhesive 10 to one side of the first surface of the substrate 1, apply photosensitive adhesive to the surface of the transparent support sheet 11, and bond the substrate 1 and the support sheet 11 together through the bonding adhesive 10 and the photosensitive adhesive.

[0062] Operation 203 , etching the substrate 1 from the second surface of the substrate 1 to form a through hole 4 penetrating the substrate 1 in the thickness direction, with the first electrode 6 exposed from the bottom of the through hole 4 ;

[0063] Operation 204 , filling the polymer dry film into the through hole 4 ;

[0064] Operation 205 : performing a windowing process on the polymer dry film in the through hole 4 to form a first polymer layer 2 that continuously covers at least the inner wall of the through hole 4 . The inner periphery of the first polymer layer 2 has a through window 12 , and the first electrode 6 is exposed from the bottom of the through window 12 .

[0065] Operation 206 , forming a first conductor layer 3 on the inner wall of the through window, which continuously covers at least the inner wall of the first polymer layer 2 , and the first conductor layer 3 is in contact with the first electrode 6 ; and

[0066] Operation 207 : Use light with a predetermined wavelength to irradiate the photosensitive adhesive through the support sheet to separate the bonding adhesive from the photosensitive adhesive.

[0067] In operation 201 , a second polymer layer 7 and a second conductor layer 9 may be formed on the first surface of the substrate 1 . The second conductor layer 9 is located on the surface of the second polymer layer 7 , and is electrically connected to the first electrode 6 .

[0068] In operation 202 , the support sheet 11 may be, for example, glass.

[0069] Before operation 203 , the substrate 1 may be thinned (eg, by chemical mechanical polishing) from the second surface (ie, the back surface) so as to achieve a predetermined thickness of the substrate 1 .

[0070] In operation 203 , a through hole 4 may be formed by dry etching.

[0071] In operation 204 , the polymer dry film may be filled into the through hole by using a vacuum lamination method; in addition, the polymer dry film may also cover at least a portion of the second surface of the substrate 1 .

[0072] In operation 205, the windowing process may include, for example, using photolithography to define the window locations of the polymer dry film and then performing exposure. After development, the exposed portions are retained while the unexposed portions are removed by the developer, or the exposed portions are removed by the developer while the unexposed portions are retained, depending on the characteristics of the polymer dry film.

[0073] In operation 206 , a first conductor layer 3 may be formed by sputtering a metal seed layer and electroplating. The first conductor layer 3 also at least partially covers the surface of the first polymer layer 2 located on the second surface of the substrate 1 .

[0074] Before operation 207 , further processing may be performed, such as forming an I / O bump or I / O pad on the back side, and then wafer stacking may be performed or other logic chips, digital chips, MEMS chips, or a combination thereof may be stacked thereon.

[0075] In operation 207 , the support sheet 11 may be irradiated with light of a single wavelength to separate the bonding adhesive 10 from the photoresist, thereby forming the semiconductor device 100 as shown in FIG. 1 .

[0076] The manufacturing method of the embodiment of the present application is further described below with reference to a specific example. Figures 3 to 6 are schematic cross-sectional views of the device corresponding to the main steps of this example.

[0077] The manufacturing method of this example includes the following steps:

[0078] S1. Prepare a substrate 1, which includes a first surface and a second surface. The first surface is the front surface, and the second surface is the back surface.

[0079] The front structure of the substrate 1 is formed by processing using existing methods, for example, the second polymer layer 7, the second conductor layer 9 (not shown in FIG3), the front scribe groove 8, the input / output protrusion (I / O bump), etc.

[0080] S2. As shown in FIG3 , a bonding adhesive 10 is applied on the first surface of the substrate 1, and the bonding adhesive 10 covers the front surface of the substrate 1 and the corresponding front structure; a photosensitive adhesive is applied on the surface of a cleaned support sheet 11 (the support sheet is, for example, glass), and the bonding adhesive and the photosensitive adhesive must match, and then the first surface of the substrate 1 and the support sheet 11 are aligned and pressed together, wherein the matching of the bonding adhesive and the photosensitive adhesive means that when the bonding adhesive and the photosensitive adhesive are in contact, they can bond to each other, and when light, such as ultraviolet light, is used, the bonding adhesive and the photosensitive adhesive bonded together will debond and separate from each other. In this embodiment, the bonding adhesive is selected from BOND 305, and the photosensitive adhesive is selected from BOND 701.

[0081] In this embodiment, the thickness of the bonding adhesive is set according to the height of the front structure. The thickness of the bonding adhesive needs to be higher than the highest height of the front structure. At the same time, the surface of the bonding adhesive needs to be kept flat.

[0082] S3. As shown in FIG4 , the back side of the laminated substrate 1 is thinned to the required thickness. The thickness of the substrate 1 after thinning is 50 μm to 500 μm (i.e., the thickness of the substrate 1 excluding the thickness of the bonding adhesive and the support sheet 11). The specific thickness of the substrate 1 after thinning is determined according to the product design. The conditions that need to be considered in the product design include the final volume, power consumption, process difficulty, etc.

[0083] In step S3, according to the position of the first electrode 6, the window position of the through hole 4 is defined by photolithography graphics, and then the through hole 4 is etched out by dry etching, and the polymer remaining on the side wall of the through hole 4 (for example, polymer CFn will be attached to the side wall during the etching process) is cleaned. In the entire process, it is necessary to ensure that the position of the through hole 4 and the first electrode 6 are relative. If the position offset between the two is too large, leakage may occur or even damage the electrode; wherein, the relative position of the through hole 4 and the first electrode 6 means that the center of the through hole 4 and the center of the first electrode 6 should theoretically coincide.

[0084] In this embodiment, the through hole 4 is above the first electrode 6 , and the first electrode 6 has a certain margin, which is generally greater than or equal to 25% of the diameter of the through hole 4 , preferably greater than or equal to 30% of the diameter of the through hole 4 .

[0085] At the same time, it is necessary to control the scalloping (i.e., the roughness of the via 4 sidewalls, typically the ratio of the scallop length to the depth) and the notching size at the bottom of the via 4. Notching is caused by charge accumulation at the corners when etching the via bottom, resulting in lateral etching and over-etching of the via bottom structure. In this embodiment, the smoother the via 4 sidewalls, the better. The specific scalloping value can be determined based on the current machine and process. In addition, when etching the via 4, it is necessary to control the process parameters to avoid notching.

[0086] S4. As shown in Figure 6, a polymer dry film is filled into through-hole 4 using vacuum lamination. Simultaneously, a polymer layer is formed on the back surface of the wafer. The thickness of the back polymer layer formed on the back of the wafer is 2 to 20 μm. The surface uniformity of the back polymer layer must be ensured, and there must be no bubbles in the polymer dry film within through-hole 4. The polymer dry film should be made of a material with a high dielectric constant, low dielectric loss, high breakdown voltage, and high surface and volume resistivity. In a negative pressure environment, the polymer dry film material softens and exhibits a certain degree of fluidity when heated to a certain temperature. Examples of polymer dry film materials include the S2000 series and the EMS series. For products with less stringent electrical requirements, epoxy dry films, such as SU8, can also be used.

[0087] The pressure of vacuum lamination can be determined according to the material and product structure of the polymer dry film, and the temperature can be determined according to the material and product structure of the polymer dry film.

[0088] S5. Use photolithography to define the pattern, define the backside scribing groove 5 and the polymer dry film layer window 12 in the through hole 4, ensure that the polymer dry film layer in the through hole 4 has a uniform thickness and does not fall off, and ensure that the backside scribing groove 5 and the frontside scribing groove 8 are positioned relative to each other.

[0089] The polymer dry film with a thickness of 2 μm to 10 μm adhered to the side wall of the through hole 4 is exposed, and the rest of the polymer dry film in the through hole is not exposed. The unexposed polymer dry film is then removed by development, thereby achieving windowing, retaining the polymer dry film adhered to the side wall of the through hole 4, forming a window 12 in the polymer dry film layer in the through hole 4, thereby forming a first polymer layer 2 corresponding to Example 1.

[0090] S6. As shown in Figure 6, a metal seed layer is sputtered and electroplated on the back of the integrated circuit. The thickness of the electroplated film on the back of substrate 1 is 1 μm to 15 μm. The metal conductor pattern on the back of substrate 1 is then defined using photolithography. Finally, wet etching is used to etch the first conductor layer 3 on the back of the integrated circuit chip. Throughout this process, the thickness, continuity, and adhesion of the metal seed layer must be ensured, as well as the thickness, uniformity, and continuity of the electroplated layer within through-hole 4.

[0091] The thickness of the electroplated layer in the through hole 4 is divided into two types according to the electroplating method: one is to directly electroplate 1um to 10um of a highly conductive metal on the side wall (i.e., the inner wall of the polymer dry film layer window 12); the other is to fill the entire through hole 4 (i.e., the inside of the polymer dry film layer window 12) with metal by electroplating, and ensure that the thickness of the first conductor layer 3 on the back of the substrate 1 is 1um to 15um.

[0092] S7. Further processing may be performed based on step S6 as needed, such as forming an I / O bump or I / O pad on the back of substrate 1. Wafer stacking or stacking other logic chips, digital chips, MEMS chips, or combinations thereof may also be performed. After the above processing is completed, a single wavelength of light (e.g., ultraviolet light) is used to irradiate the surface of support sheet 11 to separate the bonding adhesive and the photosensitive adhesive, forming the structure shown in FIG1 .

[0093] The above examples illustrate the specific embodiments of the present invention. However, the scope of protection of the present invention is not limited to the above-mentioned exemplary embodiments. Any modifications, equivalent substitutions, improvements, etc. made by those skilled in the art within the spirit and principles of the present invention shall be included in the scope of protection of the claims of the present invention.

Claims

1. A semiconductor device, characterized in that: The semiconductor device comprises: Substrate (1); A through hole (4) extending through the substrate in a thickness direction; A first polymer layer (2) which continuously covers at least the inner wall of the through hole (4); a first conductor layer (3) which continuously covers at least the inner wall of the first polymer layer (2); and A first electrode (6) is formed on the first surface of the substrate, and the first electrode is electrically connected to the first conductor layer (3).

2. The semiconductor device according to claim 1, wherein The first polymer layer (2) also covers at least a portion of the second surface of the substrate.

3. The semiconductor device according to claim 2, wherein: The first conductor layer (3) also at least partially covers the surface of the first polymer layer (2) located on the second surface.

4. The semiconductor device according to claim 1, wherein The semiconductor device further comprises: A second polymer layer (7) covers at least a portion of the first surface of the substrate.

5. The semiconductor device according to claim 4, wherein: The semiconductor device further comprises: A second conductor layer (9) is located on the surface of the second polymer layer (7), and the second conductor layer (9) is electrically connected to the first electrode (6).

6. A method for manufacturing a semiconductor device, characterized in that: The manufacturing method comprises: At least a first electrode (6) is formed on a first surface of a substrate (1); A bonding glue (10) is applied on one side of the first surface of the substrate, a photosensitive glue is applied on the surface of a transparent support sheet (11), and the substrate and the support sheet are bonded together by the bonding glue and the photosensitive glue; Etching the substrate from the second surface of the substrate to form a through hole (4) penetrating the substrate in the thickness direction, wherein the first electrode (6) is exposed from the bottom of the through hole (4); Filling the through-hole with a polymer dry film; The polymer dry film in the through hole (4) is subjected to a window opening process to form a first polymer layer (2) that at least continuously covers the inner wall of the through hole (4), wherein the inner periphery of the first polymer layer (2) has a through window (12); The first electrode (6) is exposed from the bottom of the through window (12); A first conductor layer (3) is formed on the inner wall of the through window, which at least continuously covers the inner wall of the first polymer layer (2), and the first conductor layer (3) is in contact with the first electrode (6); and The photosensitive adhesive is irradiated with light having a predetermined wavelength through the support sheet to separate the bonding adhesive from the photosensitive adhesive.

7. The method for manufacturing a semiconductor device according to claim 6, wherein: Before bonding the substrate and the support sheet, a second polymer layer (7) and a second conductor layer (9) are formed on the first surface of the substrate. The second conductor layer (9) is located on the surface of the second polymer layer (7), and the second conductor layer (9) is electrically connected to the first electrode (6).

8. The method for manufacturing a semiconductor device according to claim 6, wherein: The polymer dry film also covers at least a portion of the second surface of the substrate.

9. The method for manufacturing a semiconductor device according to claim 8, wherein: The first conductor layer (3) also at least partially covers the surface of the first polymer layer (2) located on the second surface.

10. The method for manufacturing a semiconductor device according to claim 6, wherein: The polymer dry film is filled into the through hole by using a vacuum lamination method.

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