Method for preparing thin film ceramic atomizing core

Abstract

A method for preparing a thin film ceramic atomizing core, comprising the following steps: S1. sputtering a first transition layer on ceramic and then sputtering a first protective layer on the first transition layer; or sputtering a first protective layer on ceramic and then sputtering a first transition layer on the first protective layer; S2. then sputtering a heating film on the first protective layer or the first transition layer; S3. printing an electrode slurry on the heating film and then sintering and annealing the heating film on which the electrode slurry is printed, so as to obtain a ceramic material comprising an electrode part; and S4. shielding the electrode part and sputtering an anti-oxidation layer on the heating film to obtain the product. The film layer of the prepared thin film ceramic atomizing core has heating uniformity and a large heating area, an atomization liquid can be uniformly evaporated and atomized, and the service life of the thin film ceramic atomizing core is prolonged.

Description

A method for preparing a thin film ceramic atomizing core

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on October 31, 2023, with application number 202311427744.7 and application name “A Method for Preparing a Thin Film Ceramic Atomization Core”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the technical field of ceramic atomizer core preparation, and in particular to a method for preparing a thin-film ceramic atomizer core. Background Art

[0003] Conventional thick-film ceramic atomizer cores are made by printing resistor slurry on the surface of porous ceramics, which acts as a heating film after sintering. During the printing process, each resistor pattern will have a certain error, and the sintering process is easily affected by the uneven temperature of various areas in the sintering furnace, which in turn changes the resistance of the heating film, resulting in concentrated heat during use. At the same time, it is easy to cause film breakage, carbon deposition, and core sticking, which affects the service life of the atomizer core.

[0004] Therefore, it is necessary to study a preparation method of a thin-film ceramic atomizer core, which can strictly control the thickness of each film layer, and then control the resistance of the heating film, so that the heat between the film layers is uniform and the heating area is large, so that the atomizing liquid can be evenly atomized during use, reducing the probability of carbon deposition, core sticking and other phenomena, and extending the service life of the atomizer core.

[0005] Summary of the Invention

[0006] The purpose of the present invention is to overcome the above-mentioned technical deficiencies and solve the technical problem that the resistance of each film layer in the ceramic atomizer core prepared by the prior art is uneven, resulting in uneven heating during use, prone to localized excessive heating, leading to film breakage, carbon deposition, and core sticking, thereby shortening the service life of the atomizer core.

[0007] This invention proposes a method for preparing a thin-film ceramic atomizer core. Under a high vacuum environment, the heating film material is evenly sputtered onto the ceramic surface, resulting in uniform heating of the film layer and a large heating area. This allows for uniform evaporation and atomization of the atomized liquid, minimizing carbon deposition and core sticking under the same operating conditions, thereby extending the lifespan of the atomizer core. Furthermore, a transition layer and a protective layer are provided to strengthen the bonding between the heating film and the ceramic, prevent the heating film from falling off, and protect the internal film structure. Furthermore, an anti-oxidation layer is provided to prevent oxidation of the film layers, further extending the lifespan of the atomizer core.

[0008] The present invention also provides a thin-film ceramic atomizer core prepared by the above-mentioned preparation method. The film layer heats evenly and has a large heating area. The atomized liquid can evaporate and atomize evenly. Under the same usage conditions, carbon deposition and core sticking are more minor, which improves consumers' evaluation during use and extends the service life of the atomizer core.

[0009] Specifically, the present invention discloses a method for preparing a thin film ceramic atomizer core, comprising the following steps:

[0010] sputtering a first transition layer on the ceramic using a transition layer target, and then sputtering a first protective layer on the first transition layer using a protective layer target;

[0011] Alternatively, a first protective layer is sputtered on the ceramic using a protective layer target, and then a first transition layer is sputtered on the first protective layer using a transition layer target;

[0012] Then, a heating film target is used to sputter a heating film on the first protective layer or the first transition layer to obtain a ceramic material containing the heating film;

[0013] Printing electrode paste on the heating film, then sintering and annealing the heating film printed with the electrode paste to obtain a ceramic material containing the electrode portion;

[0014] The electrode portion on the ceramic material containing the electrode portion is masked, and an anti-oxidation layer is sputtered on the heating film using an anti-oxidation layer target to obtain a thin film ceramic atomization core.

[0015] In some embodiments, the material of the transition layer target is selected from at least one of titanium, titanium oxide, aluminum oxide, aluminum nitride, silicon oxide, and silicon nitride; the material of the protective layer target is selected from at least one of titanium, aluminum oxide, silicon oxide, titanium oxide, and zirconium oxide.

[0016] In some embodiments, the process parameters for sputtering the first transition layer meet the following requirements: power input is 150-300 W; and the thickness of the first transition layer is 100-600 nm.

[0017] In some embodiments, the process parameters for sputtering the first protective layer meet the following requirements: power input is 150-300 W; and the thickness of the first protective layer is 100-600 nm.

[0018] In some embodiments, the material of the heating film target is selected from at least one of platinum, nickel chromium, tantalum, ruthenium, and chromium silicon; the process parameters for sputtering the heating film meet the following requirements: the power input power is 150-300W; the thickness of the heating film is 0.5-10μm.

[0019] In some embodiments, the thickness of the electrode slurry is 50-120 μm; and the sintering temperature is 600-850°C.

[0020] In some embodiments, the process parameters for sputtering the second transition layer meet the following requirements: power input is 150-300 W; and the thickness of the second transition layer is 10-200 nm.

[0021] In some embodiments, it also includes, in step S4, after masking the electrode portion on the ceramic material containing the electrode portion and before sputtering the anti-oxidation layer on the heating film, sputtering a second transition layer on the heating film using a transition layer target; the process parameters for sputtering the anti-oxidation layer meet the following requirements: the power input power is 150-300W; the material of the anti-oxidation layer target is selected from at least one of aluminum oxide, silicon oxide, titanium oxide, aluminum nitride, silicon nitride, and tantalum nitride; the thickness of the anti-oxidation layer is 30-200nm.

[0022] In some embodiments, the first protective layer is implemented as a multi-layer first protective layer, and the first transition layer is implemented as a multi-layer first transition layer.

[0023] The present invention also discloses a thin film ceramic atomizing core, which is prepared by the above-mentioned method for preparing the thin film ceramic atomizing core.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] (1) The preparation method of the thin-film ceramic atomizer core of the present invention is to evenly sputter the heating film material onto the ceramic surface under a high vacuum environment; during the process, the resistance of the heating film can be controlled by monitoring the film thickness through equipment, so that the film heats evenly and the heating area is large, the atomized liquid can evaporate and atomize evenly, and the carbon deposition and core sticking phenomena are more minor under the same use conditions, which can extend the service life of the atomizer core. At the same time, a transition layer, a protective layer, etc. are also provided to increase the bonding strength between the heating film and the ceramic, prevent the heating film from falling off, and protect the internal film structure; and an anti-oxidation layer is provided to prevent the oxidation of each film layer, thereby further extending the service life of the atomizer core.

[0026] (2) The thin film ceramic atomizer core prepared by the preparation method of the present invention has a uniform heating layer and a large heating area, and the atomized liquid can evaporate and atomize uniformly. Under the same use conditions, the carbon deposition and core sticking phenomena are more minor, which improves the use evaluation of consumers and prolongs the service life of the atomizer core. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solution of the present invention, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0028] FIG1 is a schematic diagram of a thin film ceramic atomizer core prepared in Example 1 of the present invention. DETAILED DESCRIPTION

[0029] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments, and are only used to explain the present invention and are not intended to limit the scope of protection of the present invention.

[0030] Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative work shall fall within the scope of protection of the present invention.

[0031] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0032] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the present invention. As used in the specification and appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0033] It should be further understood that the term "and / or" used in the present description and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0034] A method for preparing a thin film ceramic atomizing core,

[0035] The following steps are involved:

[0036] S1: sputtering a first transition layer on the ceramic using a transition layer target, and then sputtering a first protective layer on the first transition layer using a protective layer target;

[0037] Alternatively, a first protective layer is sputtered on the ceramic using a protective layer target, and then a first transition layer is sputtered on the first protective layer using a transition layer target.

[0038] The material of the transition layer target is selected from at least one of titanium, titanium oxide, aluminum oxide, aluminum nitride, silicon oxide, and silicon nitride.

[0039] In some embodiments, the process parameters before sputtering meet the following requirements: vacuum 2.0×10 -4 -8.0×10 -4 Pa, 30-80 sccm of argon is introduced; the process parameters during sputtering meet the following requirements: vacuum 0.3-0.9 Pa.

[0040] The process parameters for sputtering the first transition layer are as follows: the power input is 150-300 W; in some embodiments, the thickness of the first transition layer is 100-600 nm.

[0041] The material of the protective layer target is at least one selected from titanium, aluminum oxide, silicon oxide, titanium oxide, and zirconium oxide.

[0042] The process parameters for sputtering the first protective layer are as follows: the power input is 150-300 W; in some embodiments, the thickness of the first protective layer is 100-600 nm.

[0043] Specifically, the first protective layer can be implemented as a multi-layer first protective layer, and the first transition layer can be implemented as a multi-layer first transition layer; in some embodiments, the first protective layer and the first transition layer can be stacked on each other, that is, multiple layers of first protective layers and first transition layers stacked on each other can be arranged between the ceramic and the heating film.

[0044] S2: Then, a heating film target is used to sputter a heating film on the first protective layer or the first transition layer to obtain a ceramic material containing the heating film;

[0045] The material of the heating film target is selected from at least one of platinum, nickel chromium, tantalum, ruthenium, and chromium silicon; the process parameters when sputtering the heating film meet the following requirements: the power input power is 150-300W; in some embodiments, the thickness of the heating film is 0.5-10μm.

[0046] S3: printing electrode slurry on the heating film, and then sintering and annealing the heating film printed with the electrode slurry to obtain a ceramic material containing an electrode portion.

[0047] In some embodiments, the thickness of the electrode slurry is 50-120 μm, the sintering temperature is 600-850° C., and the annealing temperature is 650-550° C. The electrode slurry can be a conductive silver paste.

[0048] S4: Masking the electrode portion on the ceramic material containing the electrode portion, and sputtering an anti-oxidation layer on the heating film using an anti-oxidation layer target to obtain a thin film ceramic atomization core.

[0049] In some embodiments, the electrode portion covers a portion of the heating film.

[0050] In some embodiments, part of the heating film is not covered by the electrode portion.

[0051] The process parameters for sputtering the anti-oxidation layer are as follows: a power input of 150-300 W. The target material of the anti-oxidation layer is selected from at least one of aluminum oxide, silicon oxide, titanium oxide, aluminum nitride, silicon nitride, and tantalum nitride. In some embodiments, the thickness of the anti-oxidation layer is 30-200 nm.

[0052] If the ceramic material includes a second transition layer, in step S4 of the preparation method, after masking the electrode portion on the ceramic containing the electrode portion and before sputtering the anti-oxidation layer on the heating film using the anti-oxidation layer target, the second transition layer can be sputtered on the heating film using the transition layer target.

[0053] The process parameters for sputtering the second transition layer are as follows: the power input is 150-300 W; in some embodiments, the thickness of the second transition layer is 10-200 nm.

[0054] Specifically, the thin film ceramic atomizer core obtained in S4 can be cut into a specific size as required. That is, this method can mass-produce thin film ceramic atomizer cores of a desired size.

[0055] Among them, the function of the transition layer is to connect the protective layer and / or the heating film, and it can also connect the protective layer to the heating film. Some materials used for the protective layer have poor adhesion to the heating film layer when directly connected, and a transition layer is needed to enhance its adhesion to the heating film. The material selection of some transition layers is consistent with that of the protective layer, and the protective layer can be sputtered again to increase its external tension so that the connection between the protective layer and the heating film is tighter. At the same time, because the sputtered transition layer is made of the same material as the protective layer, both have a protective effect and can also increase its protective effect on the ceramic and the heating film. Similarly, some protective layers can also play the same role as the transition layer.

[0056] Therefore, the transition layer and the protective layer in the present invention only represent their functions; that is, in some embodiments, a protective layer and a transition layer (a first protective layer and a first transition layer) need to be set before sputtering the heating film; and the anti-oxidation layer is sputtered after the heating film is sputtered. At the same time, in some embodiments, a second transition layer is sputtered between the heating film and the anti-oxidation layer to improve the connection and adhesion between the heating film and the anti-oxidation layer.

[0057] That is, the prepared thin-film ceramic atomizer core may comprise, from bottom to top, the following: ceramic, first protective layer, first transition layer, heating film, electrode portion, and anti-oxidation layer. Alternatively, the prepared thin-film ceramic atomizer core may comprise, from bottom to top, the following: ceramic, first transition layer, first protective layer, heating film, electrode portion, and anti-oxidation layer. Both the first transition layer and the first protective layer may be multiple layers, stacked one on top of the other, and disposed between the ceramic and the heating film.

[0058] At the same time, a second transition layer can also be provided on the electrode portion and the anti-oxidation layer of the prepared thin film ceramic atomization core.

[0059] Example 1:

[0060] ①Pump the vacuum to 3.0×10 -4Pa, 40 standard cubic centimeters per minute (standard cubic centimeter per cinute, sccm) of argon is introduced to stabilize the vacuum at 0.8 Pa, the titanium target power input power is turned on to 250W, and 100nm of sputtering is performed; after the sputtering is completed, the silicon oxide target power input power is turned on to 250W, and 100nm of sputtering is performed on the titanium layer; after the sputtering is completed, the titanium target power input power is turned on to 250W, and 100nm of sputtering is performed on the silicon oxide layer; after the sputtering is completed, the silicon oxide target power input power is turned on to 250W, and 300nm of sputtering is performed on the titanium layer; after the sputtering is completed, the titanium target power input power is turned on to 250W, and 100nm of titanium is sputtered on the silicon oxide layer; after the sputtering is completed, the ruthenium target is turned on, the power input power is 300W, and a 1000nm ruthenium layer (heating film) is sputtered on the titanium layer;

[0061] ② Place the sputtered product on the jig, use a printer to print the electrode slurry onto the surface of the heating film to a thickness of about 100μm, then sinter it at 700℃, and then anneal it at 600℃. After completion, take it out for use; the electrode slurry is conductive silver paste;

[0062] ③Put the product in the jig, shield the electrode part with the jig, put it into the magnetron sputtering coating machine, and pump the vacuum to 3.0×10 -4 Pa, introduce 40sccm of argon to stabilize the vacuum at 0.8Pa, turn on the transition layer titanium oxide target power input power of 250W, sputter titanium oxide onto the ruthenium layer with a thickness of about 50nm; then turn on the silicon oxide target power, input power of 250W, sputter 200nm onto the titanium oxide layer, and after cutting, obtain a thin film ceramic atomization core.

[0063] Example 2:

[0064] ①Pump the vacuum to 8.0×10 -4 Pa, introduce 80sccm of argon to stabilize the vacuum at 0.9Pa, turn on the titanium oxide target, input power of 150W, and sputter 200nm; turn on the silicon oxide target, input power of 150W, and sputter 200nm on the titanium oxide layer; turn on the platinum target, input power of 250W, and sputter 600nm of platinum layer (heating film) on the silicon oxide layer.

[0065] ② Place the sputtered product on the jig, use a printer to print the electrode slurry onto the surface of the heating film with a thickness of about 120μm, then sinter it at 850℃, and then anneal it at 650℃. After completion, take it out and set it aside; the electrode slurry is conductive silver paste.

[0066] ③Put the product in the jig, shield the electrode part with the jig, put it into the magnetron sputtering coating machine, and pump the vacuum to 8.0×10 -4Pa, introduce 80sccm of argon to stabilize the vacuum at 0.9Pa, turn on the transition layer silicon nitride target power input power of 150W, sputter silicon nitride onto the platinum layer with a thickness of about 100nm; then turn on the aluminum nitride target power, input power of 150W, sputter 100nm onto the silicon nitride layer, and after cutting, obtain a thin film ceramic atomization core.

[0067] The following comparative examples 1-6 were prepared according to Example 1, as shown in Table 1.

[0068] Table 1 Comparative Examples 1-6 and Example 1

[0069] The ceramics in the examples and comparative examples are all produced in the same batch. Specifically, the porosity of the ceramics in this batch is 55% and the average pore size is 25 μm.

[0070] The ceramic atomizer cores prepared in the above examples and comparative examples were subjected to the following tests to obtain their performance test results. Specifically, the test results are shown in Tables 2-3.

[0071] Test method:

[0072] (1) Taste test: put the atomizing liquid into the ceramic atomizer core, then install the ceramic atomizer core into the atomizer device, and then let the evaluators use it to score; specifically, the total score is 9 points, 6-9 points are good, 3-6 points are medium, and 0-3 points are poor; the number of evaluators is 30, and the average score shall be used as the basis.

[0073] (2) Service life test: put atomizing liquid into the ceramic atomizing core, then install the ceramic atomizing core into the atomizing device, and use automatic suction equipment to perform a simulated suction life test.

[0074] Table 2 Test results of ceramic atomizer cores in the embodiment

[0075] Table 3 Test results of ceramic atomizer cores of comparative example

[0076] The ceramic atomizer core prepared in Example 1 is shown in FIG1 .

[0077] As can be seen from Tables 2-3, Example 1 performs better than the comparative example in terms of taste evaluation and service life. That is, the thin-film ceramic atomizer core prepared by the preparation method of the present invention has a better taste and a longer service life.

[0078] The above test results show that the thin-film ceramic atomizer core prepared by the preparation method of the present invention has uniform heating of the film layer and a large heating area, and the atomized liquid can evaporate and atomize evenly. Under the same usage conditions, carbon deposition and core sticking are more minor, thereby extending the service life of the atomizer core.

[0079] The specific embodiments of the present invention described above do not limit the scope of protection of the present invention. Any other corresponding changes and modifications made based on the technical concept of the present invention should be included in the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a thin film ceramic atomizer core, characterized in that: Include: Sputtering a first transition layer on the ceramic using a transition layer target, and then sputtering a first protective layer on the first transition layer using a protective layer target; or sputtering the first protective layer on the ceramic using the protective layer target, and then sputtering the first transition layer on the first protective layer using the transition layer target; sputtering a heating film on the first protective layer or the first transition layer using a heating film target to obtain a ceramic material containing the heating film; Printing electrode slurry on the heating film, and then sintering and annealing the heating film printed with the electrode slurry to obtain a ceramic material containing an electrode portion; The electrode portion on the ceramic material containing the electrode portion is masked, and an anti-oxidation layer is sputtered on the heating film using an anti-oxidation layer target to obtain a thin film ceramic atomization core.

2. The method for preparing the thin film ceramic atomizer core according to claim 1, characterized in that: The material of the transition layer target is selected from at least one of titanium, titanium oxide, aluminum oxide, aluminum nitride, silicon oxide, and silicon nitride; the material of the protective layer target is selected from at least one of titanium, aluminum oxide, silicon oxide, titanium oxide, and zirconium oxide.

3. The method for preparing the thin film ceramic atomizer core according to claim 1 or 2, characterized in that: The process parameters for sputtering the first transition layer meet the following requirements: the power input is 150-300W; and the thickness of the first transition layer is 100-600nm.

4. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 3, characterized in that: The process parameters for sputtering the first protective layer are as follows: the power input is 150-300W; and the thickness of the first protective layer is 100-600nm.

5. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 4, characterized in that: The material of the heating film target is selected from at least one of platinum, nickel-chromium, tantalum, ruthenium, and chromium silicon; the process parameters for sputtering the heating film meet the following requirements: the power input power is 150-300W; the thickness of the heating film is 0.5-10μm.

6. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 5, characterized in that: The thickness of the electrode slurry is 50-120 μm; the sintering temperature is 600-850° C., and the annealing temperature is 650-550° C.

7. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 6, characterized in that: It also includes step S4, after masking the electrode portion on the ceramic material containing the electrode portion and before sputtering the anti-oxidation layer on the heating film, sputtering a second transition layer on the heating film using the transition layer target; the process parameters for sputtering the second transition layer meet the following requirements: power input power is 150-300W; thickness of the second transition layer is 10-200nm.

8. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 7, characterized in that: The process parameters for sputtering the anti-oxidation layer meet the following requirements: the power input is 150-300W; the material of the anti-oxidation layer target is selected from at least one of aluminum oxide, silicon oxide, titanium oxide, aluminum nitride, silicon nitride, and tantalum nitride; and the thickness of the anti-oxidation layer is 30-200nm.

9. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 8, characterized in that: The first protective layer is implemented as a multi-layer first protective layer, and the first transition layer is implemented as a multi-layer first transition layer.

10. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 9, characterized in that: The electrode portion covers a portion of the heating film.

11. The method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 10, characterized in that: The process parameters before sputtering meet the following requirements: vacuum 2.0×10 -4 -8.0×10 -4 Pa; argon gas is introduced at 30-80 sccm; the process parameters during sputtering meet the following requirements: vacuum 0.3-0.9 Pa.

12. A thin film ceramic atomizer core, prepared by the method for preparing a thin film ceramic atomizer core according to any one of claims 1 to 11.

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