Curve acquisition method, temperature control method, electronic apparatus, and semiconductor apparatus

Abstract

The present application relates to the technical field of semiconductor processes, in particular to a temperature correction curve acquisition method, a temperature control method for a wafer bearing device, an electronic apparatus, and a semiconductor apparatus. The acquisition method comprises: performing a temperature-control heating step: using a temperature measured by a temperature measurement device arranged in a wafer bearing device as temperature control feedback, and controlling a heater arranged in the wafer bearing device to heat the wafer bearing device to a set temperature; performing a temperature measurement step: using a temperature correction device to measure a current real temperature of a wafer bearing surface of the wafer bearing device, the temperature correction device being arranged on the wafer bearing surface of the wafer bearing device; and repeating the temperature-control heating step to heat the wafer bearing device to another set temperature and the temperature measurement step at least one time, so as to obtain a temperature correction curve of the set temperatures and the corresponding real temperature. By adopting the acquisition method of the present application, the temperature correction curve can be obtained, so that the problem of a big difference between the set temperatures and the real temperature after the wafer bearing surface of the wafer bearing device is heated is solved.

Description

Curve acquisition method, temperature control method, electronic device, and semiconductor device Technical Field

[0001] The present application belongs to the field of semiconductor process technology, and specifically relates to a method for obtaining a temperature correction curve, a temperature control method for a wafer carrier, an electronic device, and a semiconductor device. Background Art

[0002] During the integrated circuit manufacturing process, especially during etching, physical vapor deposition and chemical vapor deposition, a wafer carrier is generally used to support and fix the wafer to prevent the wafer from moving or misaligning during the process.

[0003] In addition to supporting and securing the wafer, wafer-carrying devices such as electrostatic chucks can also heat the wafer. The temperature of the wafer-carrying surface of the wafer-carrying device (e.g., a base) can be controlled by a temperature controller, thereby controlling the temperature of the wafer. The electrostatic chuck is equipped with a temperature-measuring fiber optic cable that measures the temperature of the back of the chuck's ceramic layer. The temperature controller can be controlled based on the temperature feedback from the temperature-measuring fiber optic cable. However, the temperature measurement point of the temperature-measuring fiber optic cable is the back of the chuck's ceramic layer, and its temperature differs from that of the carrier surface and the actual temperature of the wafer. This can cause the actual temperature of the wafer to deviate significantly from the target temperature after the electrostatic chuck heats the wafer.

[0004] Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide a method for obtaining a temperature correction curve, a temperature control method for a wafer carrier device, an electronic device and a semiconductor device, which can solve the problem that after the wafer carrying surface of the current wafer carrier device is heated, its set temperature deviates greatly from the actual temperature.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] In a first aspect, an embodiment of the present application provides a method for obtaining a temperature calibration curve, comprising:

[0008] The temperature control and heating step uses the temperature measured by a temperature detector provided in the wafer carrier as temperature control feedback to control a heater provided in the wafer carrier to heat the wafer carrier to a set temperature, wherein the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier;

[0009] a temperature measurement step, measuring the current actual temperature of the wafer carrying surface of the wafer carrying device by using a temperature calibration device, wherein the temperature calibration device is arranged on the wafer carrying surface of the wafer carrying device;

[0010] Repeat the temperature control heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once to obtain a temperature calibration curve between the set temperature and the corresponding actual temperature.

[0011] In a second aspect, an embodiment of the present application provides a temperature control method for a wafer carrier, comprising:

[0012] Get the set heating temperature;

[0013] Taking the set heating temperature as the actual temperature, obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve; wherein the temperature correction curve is obtained using the above-mentioned acquisition method;

[0014] The temperature measured by the thermometer is used as temperature control feedback to control the heater to correct the heating temperature to heat the wafer carrier; wherein, the thermometer and the heater are arranged in the wafer carrier, the heater is used to heat the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier.

[0015] In the third aspect, an embodiment of the present application provides an electronic device, which is electrically connected to a heater and a thermometer provided in a wafer carrier. The heater is used to heat the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier. The wafer carrier surface of the wafer carrier is provided with a temperature calibration device. The electronic device includes at least one memory and at least one processor. A computer program is stored in the memory, and the processor is used to execute the acquisition method described in any of the above embodiments according to the computer program.

[0016] In a fourth aspect, an embodiment of the present application provides a semiconductor device, including:

[0017] A wafer carrier, wherein a heater and a temperature detector are provided in the wafer carrier, the heater is used to heat the wafer carrier, and the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier; and

[0018] At least one memory and at least one processor, the memory stores a computer program; the processor executes the computer program to implement the above-mentioned temperature control method.

[0019] In the embodiment of the present application, a heater and a thermometer are provided in the wafer carrier device. The heater can heat the wafer carrier device, and the thermometer can measure the temperature of the surface of the wafer carrier device. After the set temperature is set, the heater can use the temperature measured by the thermometer as temperature control feedback to heat the wafer carrier device to the set temperature, and then the actual temperature of the wafer carrier surface of the wafer carrier device can be obtained by a temperature calibration device placed on the wafer carrier surface of the wafer carrier device; the heater is repeatedly controlled to heat the wafer carrier device to another set temperature, and the temperature calibration device can obtain another actual temperature of the wafer carrier surface of the wafer carrier device. It can be seen that after the above steps, the actual temperature corresponding to each set temperature can be obtained, and each set temperature and actual temperature can correspond to a coordinate point in the coordinate system. By fitting each coordinate point, a temperature calibration curve of the set temperature and the corresponding actual temperature can be obtained.

[0020] After obtaining the temperature calibration curve and acquiring the desired heating temperature of the wafer, the corrected heating temperature corresponding to the set heating temperature can be determined based on the temperature calibration curve. After the heater is heated at the corrected heating temperature corresponding to the set heating temperature, the actual temperature of the wafer supporting surface of the wafer supporting device becomes the set heating temperature. It can be seen that heating the wafer supporting device according to the temperature calibration curve of the present application can reduce the deviation between the actual temperature of the wafer supporting surface of the wafer supporting device and the set heating temperature, and can even make the actual temperature equal to the set heating temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] FIG1 is a schematic flow chart of a method for obtaining a temperature calibration curve disclosed in an embodiment of the present application;

[0022] FIG2 is a schematic diagram of the structure of each heating area on the wafer carrier device disclosed in an embodiment of the present application;

[0023] FIG3 is a flow chart of a method for obtaining a temperature calibration curve disclosed in another embodiment of the present application;

[0024] FIG4 is a schematic flow chart of a method for obtaining a temperature calibration curve disclosed in an improved embodiment based on the embodiment shown in FIG1 ;

[0025] FIG5 is a schematic flow chart of a method for obtaining a temperature calibration curve disclosed in an improved embodiment based on the embodiment shown in FIG2 ;

[0026] FIG6 is a flow chart of a method for obtaining a temperature calibration curve disclosed in an improved embodiment based on the embodiments shown in FIG2 and FIG5 ;

[0027] FIG7 is a schematic flow chart of a method for obtaining a temperature calibration curve disclosed in another improved embodiment based on the embodiments shown in FIG2 and FIG5 ;

[0028] FIG8 is a flow chart of a temperature control method for a wafer carrier device disclosed in an embodiment of the present application;

[0029] FIG9 is a graph of a temperature calibration curve obtained in an embodiment of the present application;

[0030] FIG10 is a temperature variation curve diagram of the wafer carrying surface of the wafer carrying device disclosed in an embodiment of the present application.

[0031] Description of reference numerals:

[0032] 100-heating area. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0034] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or at least two. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0035] Below, in combination with the accompanying drawings, the temperature correction curve acquisition method, wafer carrier temperature control method, electronic equipment and semiconductor equipment provided in the embodiments of the present application are described in detail through specific embodiments and their application scenarios.

[0036] As shown in FIG1 , the embodiment of the present application discloses a method for obtaining a temperature calibration curve, comprising:

[0037] S110, temperature control and heating step, using the temperature measured by the thermometer provided in the wafer carrier as temperature control feedback, controlling the heater provided in the wafer carrier to heat the wafer carrier to the set temperature, wherein the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier.

[0038] Specifically, after setting the set temperature, the heater can use the temperature measured by the thermometer as temperature control feedback to heat the wafer carrier to the set temperature. The thermometer can be a temperature-measuring optical fiber, which can measure the temperature of the back side of the ceramic layer of the wafer carrier. Under ideal conditions, this temperature can be equivalent to the temperature of the wafer carrier surface of the wafer carrier, thereby achieving the purpose of using the thermometer to measure the temperature of the wafer carrier surface. In this case, the surface of the wafer carrier measured by the thermometer is the back side of the ceramic layer of the wafer carrier. However, in actual processes, there is often an error between the temperature measured by the thermometer and the actual temperature of the wafer carrier surface of the wafer carrier. For details, please refer to Figure 9.

[0039] S120, a temperature measurement step, using a temperature calibration device to measure the current real temperature of the wafer carrying surface of the wafer carrying device, wherein the temperature calibration device is arranged on the wafer carrying surface of the wafer carrying device.

[0040] In some embodiments, after completing step S110, step S120 is performed after the temperature of the wafer carrying surface of the wafer carrying device stabilizes. When the temperature fluctuation meets the requirements, the temperature can be determined to be stable. At this time, the single-point instantaneous temperature change of the wafer carrying surface of the wafer carrying device is not large, thereby improving the accuracy of the current real temperature of the wafer carrying surface measured by the temperature calibration device. The temperature fluctuation of the wafer carrying surface of the wafer carrying device can be seen in Figure 10. The curve in the figure is the instantaneous temperature of the wafer carrying surface of the wafer carrying device, and the straight line is the average temperature of the wafer carrying surface of the wafer carrying device.

[0041] S130, repeating the temperature control and heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once.

[0042] Specifically, the set temperature can be set repeatedly at least once, and each set temperature can be different. After each set temperature is set, the heater can heat the wafer carrier to a different set temperature, and the actual temperature of the wafer carrier surface of the wafer carrier corresponding to the different set temperatures can be obtained through the temperature calibration device. For example, when the temperature control and heating step is executed for the first time, the upper computer sends the first set temperature instruction to the lower computer, and the lower computer controls the heater to heat the wafer carrier to the first set temperature based on the feedback of the temperature measuring optical fiber; when the temperature control and heating step is executed for the next time, the upper computer sends the next set temperature instruction, and the lower computer controls the heater to heat the wafer carrier to the next set temperature based on the feedback of the temperature measuring optical fiber, and so on, until the heater heats the wafer carrier to the last set temperature. After each temperature control and heating step is executed, a temperature measurement step is executed to obtain the actual temperature of the wafer carrier surface of the wafer carrier corresponding to each set temperature.

[0043] S140: Obtain a temperature calibration curve between the set temperature and the corresponding actual temperature.

[0044] According to the actual temperature of the wafer carrying surface of the wafer carrying device corresponding to each set temperature, a temperature calibration curve between the set temperature and the corresponding actual temperature is obtained.

[0045] In the coordinate system where the temperature correction curve is located, the set temperature and the actual temperature correspond to different coordinate axes. The set temperature represents the target temperature of the wafer carrying surface of the wafer carrying device required by the process. In the process of obtaining the temperature correction curve, the heating temperature is corrected to make it the same as the set temperature. The actual temperature indicates the actual temperature of the wafer carrying surface of the wafer carrying device when the heater heats the wafer carrying device until the temperature measured by the thermometer reaches the set temperature.

[0046] In an embodiment of the present application, a heater and a thermometer are provided in the wafer carrier device. The heater can heat the wafer carrier device, and the thermometer can measure the temperature of the surface of the wafer carrier device (for example, the back of the ceramic layer of the wafer carrier device). After setting the set temperature, the heater can use the temperature measured by the thermometer as temperature control feedback to heat the wafer carrier device to the set temperature, and then the real temperature of the wafer carrier surface of the wafer carrier device can be obtained by a temperature calibration device placed on the wafer carrier surface of the wafer carrier device; the heater is repeatedly controlled to heat the wafer carrier device to another set temperature, and the temperature calibration device can obtain another real temperature of the wafer carrier surface of the wafer carrier device. It can be seen that after the above steps, the real temperature corresponding to each set temperature can be obtained, and each set temperature and real temperature can correspond to a coordinate point in the coordinate system. By fitting each coordinate point, a temperature calibration curve of the set temperature and the corresponding real temperature can be obtained.

[0047] After obtaining the temperature correction curve, after obtaining the set heating temperature of the wafer to be controlled, the corrected heating temperature corresponding to the set heating temperature can be determined according to the temperature correction curve. After the heater is heated with the corrected heating temperature corresponding to the set heating temperature, the actual temperature of the wafer carrying surface of the wafer carrier can be equal to the set heating temperature, that is, the coordinate point of the actual temperature equal to the set heating temperature is found from the coordinate system of the temperature correction curve. The coordinate point of the set temperature corresponding to the coordinate point is the above-mentioned corrected heating temperature. Specifically, in the process of heating the wafer, the set heating temperature of the wafer is the same as the actual temperature in the temperature correction curve. According to the actual temperature, the set temperature of the corresponding wafer carrier can be obtained, and the set temperature is the corrected heating temperature. It can be seen that heating the wafer carrier using the temperature correction curve obtained by the acquisition method of the present application can reduce the deviation between the actual temperature of the wafer carrying surface of the wafer carrier and the set heating temperature, and even make the actual temperature equal to the set heating temperature.

[0048] In some embodiments, the shape of the temperature calibration device is adapted to the shape of the wafer supporting surface of the wafer supporting device, and is used to measure the temperature of multiple heating areas 100 on the wafer supporting surface of the wafer supporting device. Furthermore, in other embodiments, referring to FIG. 2 , the heating area 100 may be a circular area and at least one annular area surrounding the circular area. In the case of multiple annular areas, the multiple annular areas are nested in sequence. In this embodiment, the shape of the temperature calibration device is adapted to the shape of the wafer supporting surface of the wafer supporting device, so the temperature calibration device can measure the temperature of all areas on the wafer supporting surface.

[0049] In some embodiments, step S130 of the acquisition method specifically includes:

[0050] Determine whether the heater heats the wafer carrier to the last set temperature. If so, execute step S140; if not, return to step S110 to repeat the temperature control heating step to heat the wafer carrier to another set temperature and temperature measurement step.

[0051] Specifically, the number of set temperatures is selected according to actual conditions. The more set temperatures there are, the more accurate the temperature correction curve obtained. For example, there can be ten set temperatures, namely S1, S2...S10. If the heater does not heat the wafer carrier to S10, it returns to step S110; after the heater heats the wafer carrier to S10, the cycle ends to execute step S140.

[0052] In some embodiments, the temperature calibration device is a wired RTD temperature measurement device, which can improve the accuracy of the temperature calibration device in measuring the actual temperature of the wafer support surface of the wafer support device. Of course, the temperature calibration device can also be a component such as a temperature sensor that can directly measure the actual temperature of the wafer support surface of the wafer support device.

[0053] In other embodiments, please refer to FIG. 2 and FIG. 3 . As the size of the wafer increases, the size of the wafer carrying surface of the corresponding wafer carrier also increases. For example, the diameter is 12 inches. The wafer carrying surface of the wafer carrier has at least two heating areas 100. Different heating areas 100 correspond to different heaters, so that on the basis of achieving heating of a large area, different heating areas can be zoned for temperature control, thereby ensuring temperature uniformity. Furthermore, in some embodiments, the multiple heating areas 100 may include annular areas and circular areas, and each annular area surrounds the circular area and is sequentially connected. After each heater heats each heating area of ​​the wafer carrying surface of the wafer carrier one by one, the temperature of each heating area 100 of the wafer carrying surface of the wafer carrier may be different. Therefore, using a temperature correction curve may not be able to control each heating area 100 of the wafer carrying surface of the wafer carrier at the set heating temperature.

[0054] In some embodiments, each heating zone 100 corresponds to a temperature calibration curve.

[0055] In some embodiments, the plurality of heaters can be divided into a plurality of heater groups, each heater group including at least one heater, and each heating zone 100 corresponds one-to-one to each heater group, that is, each heater group can heat each heating zone 100 respectively. In addition, there are a plurality of temperature detectors, and each heating zone 100 corresponds one-to-one to each temperature detector, that is, each temperature detector can measure the temperature of the position corresponding to each heating zone 100 on the surface of the wafer carrier device and is located below the wafer carrier surface of the wafer carrier device. Therefore, when each heating zone 100 corresponds to a temperature calibration curve, the corrected heating temperature corresponding to the set heating temperature of each heating zone 100 can be obtained according to each temperature calibration curve. Each heater group can heat each heating zone 100 at each corrected heating temperature, thereby ensuring that the temperature of each heating zone 100 on the wafer carrier surface of the wafer carrier device tends to be consistent.

[0056] On this basis, as shown in FIG3 , the acquisition method disclosed in the embodiment of the present application includes:

[0057] S210, temperature control and heating step, using the temperature measured by each temperature detector set in the wafer carrier as temperature control feedback, controlling each heater set in the wafer carrier to heat the corresponding heating area 100 to the set temperature, wherein each temperature detector is used to measure the temperature of the position corresponding to each heating area 100 on the surface of the wafer carrier one by one and is located below the wafer carrier surface of the wafer carrier.

[0058] S220 , temperature measurement step, using a temperature calibration device to measure the current actual temperature of each heating area 100 respectively.

[0059] In step S220, in some embodiments, there may be multiple temperature calibration devices, which may be divided into multiple groups of temperature calibration devices, each of which includes at least one temperature calibration device. Each temperature calibration device group can measure the current actual temperature of each heating zone 100 in a one-to-one correspondence. For example, for a temperature measuring wafer (a wafer used for temperature measurement during an experiment), it has multiple temperature measuring resistors or temperature measuring couples, each of which serves as a temperature calibration device and can measure the actual temperature of each heating zone 100 of the wafer carrier. In other embodiments, a temperature calibration device that can simultaneously measure the current actual temperature of each heating zone 100 can also be used.

[0060] S230, repeating the temperature control and heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once.

[0061] S240 , respectively obtain temperature calibration curves of the set temperature of each heating area 100 and the corresponding actual temperature.

[0062] In order to verify the accuracy of controlling the temperature of the wafer carrying surface of the wafer carrying device using the temperature calibration curve, in some embodiments, referring to FIG. 4 , after the above step S140 , the following steps are further included:

[0063] S150 , obtaining a verification set temperature, and taking the verification set temperature as the actual temperature, obtaining a verification correction temperature corresponding to the verification set temperature according to a temperature correction curve.

[0064] The verification set temperature here refers to the target temperature of the wafer support surface of the wafer carrier, that is, the actual temperature in the temperature calibration curve. The set temperature corresponding to the target temperature in the temperature calibration curve is the verification calibration temperature of the heater. In other words, when the heater heats the wafer carrier to the verification calibration temperature, the actual temperature of the wafer support surface of the wafer carrier is the verification set temperature. It should be noted that the verification set temperature here can be the same as the set temperature value used in the temperature calibration curve acquisition process; of course, the verification set temperature can also be different from the set temperature value. Taking Figure 9 as an example, the verification set temperature is the Y-axis temperature value of the temperature calibration curve. Based on the temperature calibration curve, the X-axis temperature value, i.e., the verification calibration temperature corresponding to the verification set temperature, can be obtained. For example, if the verification set temperature Ty = 45°C, the corresponding verification calibration temperature Tx = 40°C. If the temperature calibration curve is accurate, when the upper computer issues a temperature command of 40°C, the lower computer, through feedback from the temperature measuring fiber, will determine that the temperature of the wafer support surface of the wafer carrier is 45°C. In this embodiment, the actual temperature of the wafer support surface of the wafer carrier is measured by the temperature calibration device. By calculating the difference between the actual temperature and 45°C, we can determine whether the point on the temperature calibration curve is accurate.

[0065] S160 , using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier to verify the calibration temperature.

[0066] S170. Use a temperature calibration device to measure the current actual verification temperature.

[0067] In some embodiments, after step S160 is completed and the temperature of the wafer carrying surface of the wafer carrying device is stabilized, step S170 is performed.

[0068] S180: Determine whether the difference between the current actual verification temperature and the verification setting temperature is less than a first preset threshold.

[0069] When the difference between the current actual verification temperature and the verification setting temperature is less than a first preset threshold, it is determined that the verification setting temperature meets the specification.

[0070] In this embodiment, after obtaining the verification set temperature, the corresponding verification correction temperature is obtained according to the temperature correction curve, and then the heater heats the wafer carrier device at the verification correction temperature. If the temperature of the wafer carrying surface of the wafer carrier device can be accurately controlled by the above-mentioned temperature correction curve, then the actual verification temperature of the wafer carrying surface of the wafer carrier device should not be much different from the verification set temperature. Therefore, it is possible to determine whether the verification set temperature meets the specifications by judging whether the difference between the current actual verification temperature and the verification set temperature is less than the first preset threshold value, and then determine whether the temperature correction curve can accurately control the temperature of the wafer carrying surface of the wafer carrier device.

[0071] In an embodiment where the wafer supporting surface of the wafer supporting device has at least two heating areas 100, each heating area 100 is provided with at least two temperature measuring points, for example. On this basis, referring to FIG. 5 , after the above step S240, the acquisition method further includes:

[0072] S250 , obtaining a verification set temperature, and taking the verification set temperature as the actual temperature, obtaining a verification correction temperature corresponding to the verification set temperature according to a temperature correction curve.

[0073] S260, using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier to verify the calibration temperature.

[0074] S270 , using a temperature calibration device to obtain the current actual verification temperature of each temperature measuring point in each heating area 100 .

[0075] In some embodiments, after step S260 is completed and the temperature of the wafer carrying surface of the wafer carrying device is stabilized, step S270 is performed.

[0076] S280. Obtain the actual average value of the current real verification temperature of each temperature measuring point in each heating area 100 and the regional range of the current real verification temperature of each temperature measuring point in each heating area 100. The regional range is the difference between the highest temperature value and the lowest temperature value in the heating area 100.

[0077] Each heating area 100 is provided with at least two temperature measuring points, so the temperature calibration device can measure the actual verification temperature of each temperature measuring point in each heating area 100 respectively, and then can obtain the actual average value of the current actual verification temperature of each temperature measuring point in each heating area 100 and the regional range of the current actual verification temperature of each temperature measuring point in each heating area. For example, the wafer carrier surface of the wafer carrier device has two heating areas 100, and each heating area 100 is provided with three temperature measuring points. The actual average value obtained in this step is: the actual average value of the actual verification temperature of the three temperature measuring points in the first heating area 100 and the actual average value of the actual verification temperature of the three temperature measuring points in the second heating area 100; the regional range obtained in this step is: the regional range of the actual verification temperature of the three temperature measuring points in the first heating area 100, that is, the difference between the highest temperature point and the lowest temperature point of the three temperature measuring points; and the regional range of the actual verification temperature of the three temperature measuring points in the second heating area 100, that is, the difference between the highest temperature point and the lowest temperature point of the three temperature measuring points.

[0078] S290: Determine whether the difference between each actual average value and the verification set temperature is within a first preset range, and whether the range of each region is within a second preset range.

[0079] In some embodiments, the first preset range may be ±0.5°C, ±1°C, ±2°C, etc., and the second preset range may also be selected according to actual conditions. For example, the second preset range may be 0°C~1°C, 0°C~2°C, etc. This application does not limit the specific values ​​of the first preset range and the second preset range.

[0080] This embodiment determines whether the temperature correction curve is accurate by determining whether the difference between the actual average value and the verification set temperature of each heating zone 100 is within the corresponding first preset range, and whether the regional range of each heating zone 100 is within the corresponding second preset range. By ensuring that the difference between the actual average value and the verification set temperature of each heating zone 100 is within the first preset range, the actual verification temperature of each temperature measurement point in each heating zone 100 can be concentrated within the first preset range; while ensuring that the regional range of each heating zone 100 is within the second preset range, the actual verification temperature of each temperature measurement point in each heating zone 100 can be kept close to each other, thereby ensuring that the actual verification temperature of each temperature measurement point is close to the first preset range, or even within the first preset range. Therefore, by determining whether the difference between the actual average value and the verification set temperature of each zone is within the first preset range, and whether the regional range of each zone is within the second preset range, it is possible to accurately determine whether the temperature correction curve is capable of accurately controlling the temperature of the wafer carrying surface of the wafer carrying device.

[0081] When the difference between each actual average value and the verification set temperature is within the first preset range, and the range of each region is within the second preset range, it is determined that the verification set temperature meets the specification.

[0082] To correct the temperature calibration curve, in some embodiments, referring to FIG. 6 , when there is a heating area where the difference between the actual average value and the verification set temperature is outside the first preset range, the acquisition method further includes:

[0083] S300 , correcting the actual average value of the heating area by using the preset difference value, taking the corrected actual average value as the real temperature, and calibrating the temperature correction curve.

[0084] In some embodiments, the preset difference can be half the difference between the actual average and the verified set temperature, thereby preventing excessive temperature fluctuations in the heating area 100. For example, if the actual average is 42°C and the verified set temperature is 40°C, the preset difference is (42-40) / 2, or 1°C. Of course, the preset difference can also be selected based on actual conditions, such as a fixed value of 0.5°C, 1°C, etc. This application does not limit the specific value of the preset difference.

[0085] When the difference between the actual average value and the verification set temperature is greater than or equal to the first preset threshold, the actual average value whose difference with the verification set temperature is greater than or equal to the first preset threshold is corrected by the preset difference, so that the actual average value can be adjusted toward the verification set temperature, thereby calibrating the temperature correction curve.

[0086] S310 , obtaining a calibrated verification correction temperature corresponding to the verification setting temperature according to the calibrated temperature correction curve.

[0087] S320 , using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier at the calibrated verification correction temperature.

[0088] S330: Use a temperature calibration device to measure the actual average value after calibration.

[0089] In some embodiments, after step S320 is completed and the temperature of the wafer carrying surface of the wafer carrying device is stabilized, step S330 is performed.

[0090] S340: Determine whether the difference between the actual average value after calibration and the verification set temperature is within a third preset range. If not, return to step S300; if yes, end.

[0091] In some embodiments, the third preset range can be selected according to actual conditions, for example, the error value can be ±0.5°C, ±1°C, ±2°C, etc.

[0092] In this embodiment, after calibrating the temperature correction curve, the calibrated verification correction temperature corresponding to the verification set temperature is obtained through the calibrated temperature correction curve, and then the heater heats the wafer carrier again with the calibrated verification correction temperature, and finally it is judged again whether the difference between the calibrated actual average value and the verification set temperature is within the third preset range. It can be seen that in this embodiment, by judging whether the calibrated actual average value is accurate, it can be judged whether the calibrated temperature correction curve can accurately control the temperature of the wafer carrying surface of the wafer carrier. In addition, in this embodiment, the difference between the calibrated actual average value and the verification set temperature is within the third preset range, so that the calibrated actual average value of each temperature measuring point in each heating area 100 can be concentrated to the third preset range; if the calibrated actual average value of each temperature measuring point in each heating area 100 is not within the third preset range, the actual average value is corrected again with the preset difference, and then the temperature correction curve is calibrated again.

[0093] It should be noted that the verification setting temperature here is the same as the verification setting temperature in step S250, while the verification correction temperature after calibration is different from the verification correction temperature in step S250.

[0094] Please refer to FIG. 7 . In the above step S340 , when the difference between the calibrated actual average value and the verification set temperature is within the third preset range, the obtaining method further includes:

[0095] S350: Determine whether the ratio of the maximum regional range among the regional ranges of the current actual verification temperature at each temperature measurement point in each heating zone 100 after calibration to the overall range of the wafer carrier is greater than or equal to a second preset threshold, where the overall range is the difference between the highest and lowest temperatures within the wafer carrier. If so, proceed to step S390, completing the calibration.

[0096] In some embodiments, the second preset threshold value may be ninety-five percent. The regional range of each heating area 100 refers to: the temperature difference between the lowest temperature point and the highest temperature point in each heating area 100, and the overall range refers to the temperature difference between the lowest temperature point and the highest temperature point in all heating areas 100. If the wafer carrying surface of the wafer carrier has a total of 4 heating areas 100, and each heating area 100 has 10 temperature measuring points, then the wafer carrying surface of the wafer carrier has a total of 40 temperature measuring points. The difference between the highest temperature point and the lowest temperature point in these 40 temperature measuring points is the overall range, and the difference between the highest temperature point and the lowest temperature point in the 10 temperature measuring points of each heating area 100 is the regional range of the area. The regional range can reflect the uniformity of temperature distribution.

[0097] In this embodiment, the ratio of the maximum regional range of the regional range of the current actual verification temperature of each temperature measurement point of each calibrated heating zone 100 to the overall range of the wafer carrier is greater than or equal to the second preset threshold value, so that the hardware conditions can be optimized. At this time, the temperature range of each heating zone 100 is inclusive and there is no intersection, so that the hardware is close to the achievable performance limit. For example, the temperature ranges of the four heating zones 100 are 40℃~45℃, 41℃~43℃, 42℃~44℃ and 40℃~43℃, respectively. 41℃~43℃, 42℃~44℃ and 40℃~43℃ are all included in 40℃~45℃. If the temperature ranges of the four heating zones 100 are 40℃~45℃, 41℃~43℃, 39℃~44℃ and 40℃~43℃, respectively, 40℃~45℃ and 39℃~44℃ overlap, then the hardware conditions cannot reach the optimal state.

[0098] In some embodiments, as shown in FIG7 , in step S350 , when the ratio of the maximum regional range to the overall range of the wafer carrier is less than a second preset threshold, the acquisition method further includes:

[0099] S360 , obtaining the maximum temperature value and the minimum temperature value of each heating area 100 .

[0100] S370. Obtain, in each heating area 100, the heating area 100 whose maximum temperature value is higher than the maximum temperature value of the heating area where the maximum regional range is located, and the heating area 100 whose first absolute value of the difference between the two is the largest, and the heating area 100 whose minimum temperature value is lower than the minimum temperature value of the heating area 100 where the maximum regional range is located, and the heating area 100 whose second absolute value of the difference between the two is the largest.

[0101] For example, if the wafer support surface of a wafer support device has a total of four heating zones 100, the first heating zone has a maximum temperature of 45°C and a minimum temperature of 40°C; the second heating zone has a maximum temperature of 46°C and a minimum temperature of 43°C; the third heating zone has a maximum temperature of 44°C and a minimum temperature of 41°C; and the fourth heating zone has a maximum temperature of 42°C and a minimum temperature of 38°C. The ranges of each zone are 5°C, 3°C, 3°C, and 4°C, respectively. Therefore, the heating zone 100 with the largest regional range is the first heating zone, the heating zone 100 with a maximum temperature higher than the maximum temperature of the heating zone 100 with the largest regional range and the largest first absolute value of the difference between the maximum temperature and the minimum temperature is the second heating zone, and the heating zone 100 with a minimum temperature lower than the minimum temperature of the heating zone 100 with the largest regional range and the largest second absolute value of the difference between the maximum temperature and the minimum temperature is the fourth heating zone.

[0102] In the above example, the first absolute value is |46-45|°C=1°C, and the second absolute value is |38-40|°C=2°C.

[0103] S380: Correct the current actual verification temperature of the heating zone where the larger of the first absolute value and the second absolute value is located by a preset value to reduce the larger of the first absolute value and the second absolute value, and return to step S340. In some embodiments, the preset value may be 0.1°C, 0.2°C, etc., and this application does not limit the specific value of the preset value.

[0104] In the example given above, the heating area where the larger of the first absolute value and the second absolute value is located is the fourth heating area. At this time, step S380 is specifically: correcting the current true temperature of the fourth heating area with a preset value to reduce the absolute value of the difference between the lowest temperature value of the fourth heating area and the lowest temperature value of the first heating area.

[0105] For example, from another perspective, if the current actual verification temperature range of the heating area 100 where the maximum regional range is located is 40℃~45℃, and the current actual verification temperature ranges of the other three heating areas 100 are 43℃~46℃, 41℃~44℃, and 38℃~42℃ respectively, then the actual verification temperature that exceeds the current actual verification temperature range of the heating area 100 where the maximum regional range is located the most is 38℃. The actual verification temperature that exceeds the most is corrected in the direction close to 40℃~45℃ with the preset value, that is, a positive preset value is added to 38℃ to make it close to 40℃. If the current actual verification temperature ranges of the other three heating areas 100 are 43℃~47℃, 41℃~44℃, and 39℃~42℃ respectively, the actual verification temperature that exceeds the current actual verification temperature range of the heating area 100 where the maximum regional range is located the most is 47℃, and the actual verification temperature that exceeds the most is corrected in the direction close to 40℃~45℃ with the preset value, that is: add a negative preset value on the basis of 47℃ to make it close to 45℃.

[0106] In some embodiments, the acquisition method further comprises:

[0107] S400: Determine whether the actual temperature of a single point on the wafer supporting surface of the wafer supporting device changes by less than 0.2°C within a preset time period, and whether the difference between the average value of the actual temperature within the preset time period, the average value of the actual temperature within the first half of the preset time period, and the average value of the actual temperature within the second half of the preset time period are both less than 0.1°C. If so, determine that the temperature is stable. In some embodiments, the preset time period can be selected based on actual conditions, such as 5 seconds, 10 seconds, 15 seconds, etc.

[0108] In this embodiment, the change in the actual temperature of a single point within the preset time period is less than 0.2°C, which can make the temperature fluctuation range of the wafer carrying surface of the wafer carrying device when the temperature is stable be ±0.1°C, so that its temperature change is in a relatively stable state; and the difference between the average value of the actual temperature within the preset time period, the average value of the actual temperature within the first half of the preset time period, and the average value of the actual temperature within the second half of the preset time period are all less than 0.1°C, which can prevent the single point temperature of the wafer carrying surface of the wafer carrying device from continuing to change slightly in the same direction.

[0109] In addition to this embodiment, a condition for determining whether the temperature is stable may also be: the 3-sigma of the actual temperature of a single point on the wafer carrying surface of the wafer carrying device is less than 0.1° C. within a preset time period.

[0110] As shown in FIG8 , the embodiment of the present application further discloses a temperature control method for a wafer carrier, including:

[0111] S510: Obtain the set heating temperature.

[0112] S520, taking the set heating temperature as the actual temperature, obtaining a corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve;

[0113] The temperature calibration curve is obtained by using the acquisition method described in any of the above embodiments. It should be noted that the corrected heating temperature here refers to the set temperature corresponding to the actual temperature in the temperature calibration curve.

[0114] S530, using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier at the corrected heating temperature;

[0115] Among them, the temperature measurer and the heater are arranged in the wafer carrying device, the heater is used to heat the wafer carrying device, and the temperature measurer is used to measure the temperature of the surface of the wafer carrying device and is located below the wafer carrying surface of the wafer carrying device.

[0116] This embodiment uses the temperature correction curve obtained by the acquisition method described in any of the above embodiments to control the temperature of the wafer carrier device, and heating the wafer carrier device according to the temperature correction curve can reduce the deviation between the actual temperature of the wafer carrying surface of the wafer carrier device and the set heating temperature, and even make the actual temperature equal to the set heating temperature.

[0117] In some embodiments, before step S520, the method further includes:

[0118] S520a, determine whether the back helium pressure of the wafer carrier is set to 8 torr and whether the back helium volume flow rate is less than 2 sccm. If so, execute step S520; if not, issue an alarm.

[0119] Setting the backside helium pressure to 8 Torr simulates the wafer carrier's normal operating conditions, during which RF is not applied to prevent harm to external operators and connected equipment. The backside helium flow rate is kept below 2 sccm to ensure a clean, stable position on the wafer carrier's wafer support surface.

[0120] In this embodiment, when obtaining the desired set heating temperature for the wafer, a corrected heating temperature corresponding to the set heating temperature can be determined based on the temperature correction curve. After the heater is heated at the corrected heating temperature, the actual temperature of the wafer supporting surface of the wafer supporting device becomes the set heating temperature. Thus, heating the wafer supporting device based on the temperature correction curve of the present application can reduce the deviation between the actual temperature of the wafer supporting surface of the wafer supporting device and the set heating temperature, and can even make the actual temperature equal to the set heating temperature.

[0121] In some embodiments, the surface of the wafer carrier has at least two heating areas 100 . Based on this, step S520 is specifically as follows:

[0122] S521 , taking the set heating temperature as the actual temperature, and obtaining the corrected heating temperature corresponding to the set heating temperature of each heating area 100 according to the temperature correction curve corresponding to each heating area 100 .

[0123] Step S530 is specifically as follows:

[0124] The temperature measured by the temperature detector is used as temperature control feedback to control the heater to heat each heating area 100 at each calibrated heating temperature.

[0125] In this embodiment, the heater can heat each heating area 100 separately. Therefore, when each heating area 100 corresponds to a temperature correction curve, the corrected heating temperature corresponding to the set heating temperature of each heating area 100 is obtained according to each temperature correction curve. The heater can heat each heating area 100 at each corrected heating temperature, thereby ensuring that the temperature of each heating area 100 on the wafer carrying surface of the wafer carrying device tends to be consistent.

[0126] An embodiment of the present application also discloses an electronic device, which is electrically connected to a heater and a thermometer provided in a wafer carrier. The heater is used to heat the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier. The wafer carrier surface of the wafer carrier is provided with a temperature calibration device. The electronic device includes at least one memory and at least one processor. A computer program is stored in the memory, and the processor is used to execute the acquisition method described in any of the above embodiments according to the computer program.

[0127] The electronic devices in the embodiments of the present application include mobile electronic devices and non-mobile electronic devices. The electronic devices include but are not limited to components such as a radio frequency unit, a network module, an audio output unit, a setting unit, a sensor, a display unit, a user setting unit, an interface unit, a memory, and a processor. Those skilled in the art will appreciate that the electronic device may also include a power supply (such as a battery) to power each component, and the power supply may be logically connected to the processor through a power management system, thereby realizing functions such as management of charging, discharging, and power consumption management through the power management system. In one embodiment, the electronic device may be a host computer, i.e., a computer.

[0128] The present application also discloses a semiconductor device, including:

[0129] A wafer carrier is provided with a heater and a temperature detector. The heater is used to heat the wafer carrier, and the temperature detector is used to measure the surface temperature of the wafer carrier and is located below the wafer supporting surface of the wafer carrier. In some embodiments, the temperature detector is a temperature measuring optical fiber, and the temperature measuring point of the temperature measuring optical fiber is located below the wafer supporting surface of the wafer carrier.

[0130] and at least one memory and at least one processor, wherein the memory stores a computer program; the processor executes the computer program to implement the temperature control method described in any one of the above embodiments.

[0131] In some embodiments, the wafer carrier includes at least two heating zones, and the at least two heating zones include a circular zone located in the middle of the wafer carrier and at least one annular zone disposed around the circular zone.

[0132] The above embodiments of the present application focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here. The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the scope of protection of the purpose of this application and the claims, all of which are within the protection of this application.

Claims

1. A method for obtaining a temperature calibration curve, characterized in that: include: A temperature control and heating step, using the temperature measured by a temperature detector provided in the wafer carrier as temperature control feedback, to control a heater provided in the wafer carrier to heat the wafer carrier to a set temperature, wherein the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier; A temperature measurement step, using a temperature calibration device to measure the current real temperature of the wafer carrying surface of the wafer carrying device, wherein the temperature calibration device is arranged on the wafer carrying surface of the wafer carrying device; Repeat the temperature control and heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once to obtain a temperature calibration curve between the set temperature and the corresponding actual temperature.

2. The acquisition method according to claim 1, characterized in that: The shape of the temperature calibration device is adapted to the shape of the wafer carrying surface of the wafer carrying device, and is used to measure the temperature of multiple heating areas on the wafer carrying surface of the wafer carrying device.

3. The acquisition method according to claim 1, characterized in that: The wafer carrying surface of the wafer carrying device has at least two heating areas, each of which corresponds to a temperature correction curve. The temperature measurement step comprises: The temperature calibration device is used to measure the current real temperature of each heating area respectively.

4. The acquisition method according to claim 1, characterized in that: Also includes: Acquire a verification set temperature, and take the verification set temperature as the actual temperature, and acquire a verification correction temperature corresponding to the verification set temperature according to the temperature correction curve; Using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier at the verification correction temperature; Measuring the current real verification temperature by using the temperature calibration device, and determining whether the difference between the current real verification temperature and the verification setting temperature is less than a first preset threshold; When the difference between the current actual verification temperature and the verification setting temperature is less than a first preset threshold, it is determined that the verification setting temperature meets the specification.

5. The acquisition method according to claim 1, characterized in that: The wafer carrying surface of the wafer carrying device has at least two heating areas, each of the heating areas is provided with at least two temperature measuring points, and the method further includes: Acquire a verification set temperature, and take the verification set temperature as the actual temperature, and acquire a verification correction temperature corresponding to the verification set temperature according to the temperature correction curve; Using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier at the verification correction temperature; Using the temperature calibration device to obtain the current actual verification temperature of each temperature measuring point in each heating area; Obtaining the actual average value of the current real verification temperature of each temperature measuring point in each heating area and the regional range of the current real verification temperature of each temperature measuring point in each heating area, wherein the regional range is the difference between the highest temperature value and the lowest temperature value in the heating area; When the difference between each of the actual average values ​​and the verification set temperature is within a first preset range, and each of the regional extremes is within a second preset range, it is determined that the verification set temperature meets the specification.

6. The acquisition method according to claim 5, characterized in that: When there is a heating area where the difference between the actual average value and the verification set temperature is outside the first preset range, the acquisition method further includes: Correcting the actual average value of the heating area with a preset difference, taking the corrected actual average value as the real temperature, and calibrating the temperature correction curve; Obtaining a calibrated verification correction temperature corresponding to the verification setting temperature according to the calibrated temperature correction curve; Using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the wafer carrier at the calibrated verification correction temperature; Using the temperature calibration device to measure the actual average value after calibration; Determining whether a difference between the actual average value after calibration and the verification set temperature is within a third preset range; If not, return to the step of correcting the actual average value of the heating area with the preset difference.

7. The acquisition method according to claim 6, characterized in that: When the difference between the calibrated actual average value and the verification set temperature is within the third preset range, the method further includes: Determine whether the ratio of the maximum regional range in the regional range of the current real verification temperature of each temperature measuring point in each heating area after calibration to the overall range of the wafer carrier is greater than or equal to a second preset threshold, the overall range being the difference between the highest temperature value and the lowest temperature value in the wafer carrier; If yes, the calibration is finished.

8. The acquisition method according to claim 7, characterized in that: When the ratio of the maximum regional range to the overall range of the wafer carrier is less than a second preset threshold, the method further includes: Obtain the maximum temperature and the minimum temperature of each heating area; Obtain, in each heating area, a heating area whose maximum temperature value is higher than the maximum temperature value of the heating area where the maximum regional range is located and whose first absolute value of the difference between the two is the largest, and a heating area whose minimum temperature value is lower than the minimum temperature value of the heating area where the maximum regional range is located and whose second absolute value of the difference between the two is the largest; Correct the current actual verification temperature of the heating area where the larger of the first absolute value and the second absolute value is located with a preset value to reduce the larger of the first absolute value and the second absolute value, and return to the step of determining whether the calibrated actual average value of each of the temperature measuring points in each of the heating areas is within a third preset range.

9. A temperature control method for a wafer carrier, characterized in that: include: Get the set heating temperature; Taking the set heating temperature as the actual temperature, obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve; wherein the temperature correction curve is obtained by using the obtaining method described in any one of claims 1 to 8; The temperature measured by the thermometer is used as temperature control feedback to control the heater to heat the wafer carrier at the corrected heating temperature; wherein the thermometer and the heater are arranged in the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier.

10. The temperature control method according to claim 9, characterized in that: The surface of the wafer carrier device has at least two heating areas, and each of the heating areas has a corresponding heater; The step of taking the set heating temperature as the actual temperature and obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve is specifically as follows: Taking the set heating temperature as the actual temperature, and obtaining the corrected heating temperature corresponding to the set heating temperature of each heating area according to the temperature correction curve corresponding to each heating area; The step of using the temperature measured by the temperature detector as temperature control feedback to control the heater to heat the wafer carrier at the corrected heating temperature is specifically as follows: The temperature measured by the temperature detector is used as temperature control feedback to control each of the heaters to heat each of the heating areas at each of the calibrated heating temperatures.

11. An electronic device, characterized in that: The electronic device is electrically connected to a heater and a thermometer arranged in a wafer carrier, the heater is used to heat the wafer carrier, the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier, the wafer carrying surface of the wafer carrier is provided with a temperature calibration device, the electronic device includes at least one memory and at least one processor, a computer program is stored in the memory, and the processor is used to execute the acquisition method described in any one of claims 1 to 8 according to the computer program.

12. A semiconductor device, characterized in that: include: A wafer carrying device, wherein a heater and a temperature detector are arranged in the wafer carrying device, wherein the heater is used to heat the wafer carrying device, and the temperature detector is used to measure the temperature of the surface of the wafer carrying device and is located below the wafer carrying surface of the wafer carrying device; as well as At least one memory and at least one processor, wherein the memory stores a computer program; the processor executes the computer program to implement the temperature control method according to claim 9 or 10.

13. The semiconductor device according to claim 12, wherein: The temperature measuring device is a temperature measuring optical fiber, and the temperature measuring point of the temperature measuring optical fiber is located below the wafer carrying surface of the wafer carrying device.

14. The semiconductor device according to claim 12, wherein: The wafer carrier comprises at least two heating areas, wherein the at least two heating areas comprise a circular area located in the middle of the wafer carrier and at least one annular area arranged around the circular area.

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