Upper lining ring, lower lining ring, gas-intake lining body and lining for vapor deposition process chamber

Abstract

Disclosed in the present application are an upper lining ring, lower lining ring, gas-intake lining body and lining for a vapor deposition process chamber. The upper lining ring comprises a first ring body, a first flow guide member and a second flow guide member, wherein the first flow guide member and the second flow guide member are arranged opposite each other, and protrude from a lower end face of the first ring body; a first end of the first flow guide member and a first end of the second flow guide member are both located on a gas intake side of the upper lining ring, and a second end of the first flow guide member and a second end of the second flow guide member are both located on an exhaust side of the upper lining ring; the gas intake side and the exhaust side of the upper lining ring are the two sides of the upper lining ring facing away from each other; and the distance between the first flow guide member and the second flow guide member is gradually reduced in a direction from the gas intake side to the exhaust side. By means of the solution, the problem of a poor process quality in a vapor deposition process chamber mentioned in the background art can be solved. Further disclosed in the present application are a vapor deposition process chamber and a semiconductor process apparatus.

Description

Upper liner ring, lower liner ring, inlet liner and liner for vapor deposition process chamber Technical Field

[0001] The present application belongs to the technical field of semiconductor process equipment, and specifically relates to an upper liner ring, a lower liner ring, an air inlet liner body and an inner liner for a vapor deposition process chamber, and specifically also relates to a vapor deposition process chamber and semiconductor process equipment. Background Art

[0002] Vapor deposition (CVD) typically occurs in the CVD chamber of semiconductor processing equipment. CVD is a process for growing thin films (such as silicon-based films) on wafers. To ensure effective processing, it is necessary to maintain a consistent process environment near the wafer and minimize any adverse effects of process gases on components within the CVD chamber.

[0003] However, the vapor deposition process chamber involved in the related art is difficult to implement. Specifically, the vapor deposition process chamber involved in the related art has problems such as poor process quality, high maintenance costs and low production capacity.

[0004] Summary of the Invention

[0005] The embodiments of the present application disclose an upper liner ring, a lower liner ring, an air inlet liner body and an inner liner for a vapor deposition process chamber, and also disclose a vapor deposition process chamber and semiconductor process equipment to solve at least one of the problems mentioned in the background technology, such as poor process quality, high maintenance cost of the vapor deposition process chamber, and low production capacity.

[0006] In order to solve the above technical problems, this application provides the following technical solutions:

[0007] In a first aspect, embodiments of the present application disclose an upper liner ring for a vapor deposition process chamber. The disclosed upper liner ring includes a first ring body, a first flow guide, and a second flow guide, wherein:

[0008] The first flow guide member and the second flow guide member are arranged opposite to each other and protrude from the lower end surface of the first ring body. The first end of the first flow guide member and the first end of the second flow guide member are both located on the air inlet side of the upper liner ring, and the second end of the first flow guide member and the second end of the second flow guide member are both located on the exhaust side of the upper liner ring. The air inlet side of the upper liner ring and the exhaust side of the upper liner ring are opposite sides of the upper liner ring. In the direction from the air inlet side to the exhaust side, the distance between the first flow guide member and the second flow guide member gradually decreases.

[0009] In the second aspect, an embodiment of the present application discloses a lower liner ring for a vapor deposition process chamber, wherein the lower liner ring includes a second ring body, the second ring body is provided with a film transfer opening, the outer peripheral wall of the second ring body is provided with an annular groove, and the annular groove is located below the film transfer opening. The area of ​​the circular area enclosed by the circular inner wall of the lower liner ring is a first area, the cross-sectional area of ​​the annular groove is a second area, and the ratio of the first area to the second area is greater than 600.

[0010] In a third aspect, an embodiment of the present application discloses a liner for a vapor deposition process chamber, wherein the disclosed liner includes the upper liner ring described above and / or the lower liner ring described above.

[0011] In a fourth aspect, an embodiment of the present application discloses a liner for a vapor deposition process chamber, the liner comprising a first flow guide and a second flow guide located between an air inlet side of the liner and an exhaust side of the liner and arranged opposite to each other, the first end of the first flow guide and the first end of the second flow guide both being located on the air inlet side of the liner, the second end of the first flow guide and the second end of the second flow guide both being located on the exhaust side of the liner, the air inlet side of the liner and the exhaust side of the liner being opposite sides of the liner, and the distance between the first flow guide and the second flow guide gradually decreases in the direction from the air inlet side to the exhaust side, and / or,

[0012] An annular groove is provided on the outer peripheral wall of the lining, and the annular groove is located below the film transmission port of the lining. The area of ​​the circular area enclosed by the circular inner wall of the lining is the first area, and the cross-sectional area of ​​the annular groove is the second area. The ratio of the first area to the second area is greater than 600.

[0013] In the fifth aspect, an embodiment of the present application discloses an air inlet lining for a vapor deposition process chamber, which is used to dock with the air inlet of the lining described above. The air inlet lining is provided with a plurality of air inlet holes, and the plurality of air inlet holes are arranged in a first direction and isolated from each other. The through-directions of the plurality of air inlet holes are consistent, and the first direction is perpendicular to the through-direction of the air inlet holes.

[0014] In a sixth aspect, an embodiment of the present application discloses a vapor deposition process chamber. The disclosed vapor deposition process chamber includes a cavity and a lining arranged in the cavity, and the lining is the lining described above.

[0015] In the seventh aspect, an embodiment of the present application discloses a vapor deposition process chamber, which includes a cavity and a liner arranged in the cavity. The liner is a split structure, and the liner includes the upper liner ring described above and the lower liner ring described above.

[0016] In an eighth aspect, an embodiment of the present application discloses a semiconductor process equipment, which includes a transfer chamber and the vapor deposition process chamber described above, and the transfer chamber cooperates with the vapor deposition process chamber.

[0017] The technical solution adopted in this application can achieve the following technical effects:

[0018] The technical solution disclosed in the embodiment of the present application is to structurally design the liner so that the liner includes a first flow guide and a second flow guide relative to each other, and the distance between the first end of the first flow guide and the first end of the second flow guide is greater than the distance between the second end of the first flow guide and the second end of the second flow guide. This structure enables the first flow guide and the second flow guide to confine the process gas to a narrower area on the exhaust side of the liner through guidance. In this process, as the process gas is consumed and its concentration decreases, the first flow guide and the second flow guide act to confine the process gas with a lower concentration to a narrower area, thereby increasing the concentration of the process gas in the narrower area. This method is conducive to increasing the concentration of the process gas in the area adjacent to the exhaust channel in the process space, thereby ensuring the thickness of the film on the wafer in this area, and ultimately helping to make the thickness of the film deposited in various areas of the wafer tend to be consistent. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] FIG1 is a cross-sectional view of a vapor deposition process chamber disclosed in an embodiment of the present application;

[0020] FIG2 is a cross-sectional view of a vapor deposition process chamber disclosed in an embodiment of the present application;

[0021] FIG3 is an enlarged schematic diagram of a portion of the structure in FIG1 ;

[0022] FIG4 is an enlarged schematic diagram of a portion of the structure in FIG3 ;

[0023] FIG5 is a schematic structural diagram of an upper liner ring disclosed in an embodiment of the present application;

[0024] FIG6 is a cross-sectional view taken along line AA of FIG5 ;

[0025] FIG7 is a schematic diagram of the three-dimensional structure of the upper liner ring disclosed in an embodiment of the present application;

[0026] FIG8 is a schematic structural diagram of a first flow guide member and a second flow guide member disclosed in an embodiment of the present application;

[0027] FIG9 is a schematic structural diagram of the lower liner ring disclosed in an embodiment of the present application;

[0028] FIG10 is a cross-sectional view taken along line BB of FIG9 ;

[0029] FIG11 is a schematic diagram of the three-dimensional structure of the lower liner ring disclosed in an embodiment of the present application;

[0030] FIG12 is a cross-sectional view of the liner disclosed in an embodiment of the present application;

[0031] FIG13 is a cross-sectional view of the assembled inner liner and the air intake liner according to an embodiment of the present application;

[0032] FIG14 is a cross-sectional view of the inner liner and the air intake liner after assembly according to an embodiment of the present application from another perspective;

[0033] FIG15 is an exploded schematic diagram of the liner disclosed in an embodiment of the present application;

[0034] FIG16 is an exploded schematic diagram of the inner liner and the air intake liner disclosed in an embodiment of the present application;

[0035] Figures 17 and 18 are schematic diagrams of the air intake liner of the split structure and the integral structure respectively;

[0036] 19A is a schematic diagram of the flow field of the process gas when it is assumed that the distance between the first flow guide and the second flow guide is equal everywhere;

[0037] FIG19B is a partial enlarged schematic diagram of FIG19A;

[0038] FIG20 is a schematic diagram of the flow field of the process gas when the distance between the first flow guide member and the second flow guide member gradually decreases;

[0039] FIG21 is a partial enlarged schematic diagram of FIG20;

[0040] 22 and 23 are schematic diagrams of the flow field of the process gas when the ratio of the first distance to the second distance is 1.2 and 1.4, respectively;

[0041] 24 and 25 are schematic diagrams of the process gas flow field when the ratios of the inner diameter of the liner to the diameter of the circle where the arc-shaped guide section is located are 0.6 and 0.8, respectively;

[0042] FIG26 is a schematic diagram of the flow field of the shielding gas when the ratio of the first area to the second area is greater than 600;

[0043] FIG27 is a schematic diagram of the flow field of the shielding gas when the ratio of the first area to the second area is less than 600;

[0044] FIG28 is a schematic structural diagram of an air intake seat disclosed in an embodiment of the present application;

[0045] FIG29 is a cross-sectional view taken along line CC of FIG28 ;

[0046] FIG30 is a schematic structural diagram of a vapor deposition process chamber disclosed in an embodiment of the present application;

[0047] Among them, the arrows in Figures 3, 4, 7, 8, 11 and 30 indicate the flow direction of gas (process gas or driving gas).

[0048] Description of reference numerals:

[0049] 10- cavity, 11- top cover, 111- cavity top wall, 12- bottom cover, 13- base ring, 14- inlet seat, 141- gas input channel, 15- inlet pipe, 16- exhaust seat,

[0050] 20- bearing seat, 21- bearing surface,

[0051] 30- liner, 31- upper liner ring, 311- first guide member, 312- second guide member, 313- first ring body, 314- baffle, 315- protrusion, 32- lower liner ring, 321- second ring body, 322- annular flange, 33- inlet liner, 331- first kit, 332- first isolation member, 333- second kit, 334- second isolation member,

[0052] 301-air inlet notch, 302-annular groove, 303-concave platform, 304-gas delivery hole, 305-annular positioning groove, 306-film transmission port, 307-air inlet hole, 308-top straight wall, 309-bottom straight wall, 310-arc side wall,

[0053] 101-arc guide section, 102-first straight guide section, 103-second straight guide section,

[0054] 01-process space, 02-air inlet channel, 021-air inlet, 03-exhaust channel, 031-first exhaust section, 0311-exhaust port, 032-second exhaust section, 033-third exhaust section, 04-driving gas chamber, 05-cavity space,

[0055] 40-upper heating module, 41-first outer zone heating lamp, 42-first inner zone heating lamp, 43-first reflector, 44-second reflector,

[0056] 50-lower heating module, 51-second outer zone heating lamp, 52-second inner zone heating lamp, 53-third reflector, 54-fourth reflector,

[0057] 60-wafer, 70-preheat ring. DETAILED DESCRIPTION

[0058] To make the objectives, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0059] The embodiment of the present application relates to a process chamber of an epitaxial growth device. The process chamber involved is the place where the epitaxial growth device performs the epitaxial growth process, and is an important component of the epitaxial growth device. The inventors of the present application found in the process of designing the process chamber of the epitaxial growth device that whether the process chamber of the epitaxial growth device can ensure the uniformity of the process gas in the epitaxial production process as much as possible is an important factor in determining the quality of epitaxial growth. The inventors of the present application further found that when performing the epitaxial growth process, the process gas will converge towards the exhaust channel when flowing to the area close to the exhaust channel of the process chamber, and then be discharged too quickly through the exhaust channel. The convergence of process gas within the process chamber and the excessive discharge from the process chamber are more likely to cause uneven distribution of process gas in the area close to the exhaust channel within the process chamber.

[0060] To improve the uniformity of process gas flow in the area near the exhaust channel within the process chamber, the inventors installed a flow equalizer in the exhaust channel. The flow equalizer features multiple flow equalizer holes arranged in an array. This allows process gas from multiple locations to flow into the corresponding flow equalizer holes and then into the exhaust channel. This can alleviate the accumulation of process gas to a certain extent. At the same time, the flow equalizer also provides a certain barrier effect, thereby preventing process gas from being discharged from the process chamber too quickly.

[0061] However, the inventors further discovered that this structure still has disadvantages. The flow equalizer has a large obstruction to the process gas, which leads to too slow exhaust speed of the process gas, and it is easy to cause more process gas to be deposited on the inner wall or components near the exhaust channel in the process chamber, which is a process result that the process personnel do not want to see. At the same time, the aperture of the flow equalizer hole is small, and the flow area of ​​the process gas suddenly becomes smaller when passing through the flow equalizer hole, which makes it easier to cause the process gas in the area near the exhaust channel in the process chamber to have turbulent airflow, and ultimately lead to the uniformity of the process gas in this area (i.e. the area near the exhaust channel in the process chamber) is still not high. In other words, the uniformity of the process gas in this area is still poor, which will still affect the thickness uniformity of the thin film formed by epitaxial growth, and ultimately lead to poor process quality.

[0062] Based on this, the process chamber disclosed in the embodiments of this application is a further structural improvement of the process chamber of the epitaxial growth equipment involved in the related art to solve the technical problems existing in the epitaxial growth equipment described in the related art. The following, combined with the accompanying drawings, details the technical solutions disclosed in each embodiment of this application.

[0063] Please refer to Figures 1 to 13. The process chamber of the epitaxial growth equipment disclosed in the embodiment of the present application may include a cavity 10 and a support 20.

[0064] The cavity 10 is a peripheral component of the process chamber and is also a main component constituting the process space 01 of the process chamber. The cavity 10 has a cavity space 09.

[0065] The carrier 20 is used to carry a substrate (such as a silicon wafer). In an embodiment of the present application, the carrier 20 is arranged inside the cavity 10, that is, the carrier 20 is arranged in the cavity space 09. The carrier 20 and the cavity 10 enclose a process space 01 located above the carrier 20, and the process space 01 is a space for the substrate to undergo an epitaxial growth process. The carrier 20 has a carrying surface 21 for carrying a substrate. Specifically, the carrying surface 21 is a plane. When performing an epitaxial growth process, the substrate is placed on the carrying surface 21, and then placed in the process space 01 to achieve an epitaxial growth process in the process space 01.

[0066] In an embodiment of the present application, the cavity 10 is also used to form some important structures of the process chamber. Specifically, the cavity 10 is provided with an air inlet channel 02 and an exhaust channel. Among them, the exhaust channel includes a plurality of exhaust sections connected in sequence, and at least one of the plurality of exhaust sections intersects with the axis of the exhaust port 031. For example, the exhaust channel includes a first exhaust section 03 and a second exhaust section 04 that are interconnected. The air inlet channel 02 has an air inlet 021, and the air inlet 021 is connected to the process space 01. The air inlet channel 02 is used to transport the process gas required for the epitaxial production process into the process space 01 through the air inlet 021. The exhaust channel has an exhaust port 031, and the exhaust port 031 is connected to the process space 01. During the epitaxial production process, the process gas (i.e., exhaust gas) remaining after participating in the epitaxial growth process can pass through a plurality of exhaust sections in sequence, thereby achieving the purpose of being discharged through the exhaust channel. Taking the exhaust channel including the first exhaust section 03 and the second exhaust section 04 as an example, the process gas (i.e., waste gas) remaining after participating in the epitaxial growth process can first enter the first exhaust section 03 from the process space 01 through the exhaust port 031, and then flow from the first exhaust section 03 into the second exhaust section 04, thereby achieving the purpose of being discharged through the exhaust channel.

[0067] In the embodiment of the present application, the air inlet 021 and the air outlet 031 are located on opposite sides of the carrier 20, and the axes of the air inlet 021 and the air outlet 031 are both parallel to the carrier surface 21 of the carrier 20. This allows the process gas entering the process space 01 through the air inlet 021 to flow over the carrier 20 in a direction parallel to the carrier surface 21 and then enter the air outlet 031 in a direction parallel to the carrier surface 21. In other words, the process gas always flows through the carrier surface 21 in a laminar flow in a direction parallel to the carrier surface 21 from the air inlet 021 to the air outlet 031.

[0068] To achieve flow in a direction parallel to the carrying surface 21, in some embodiments, the air inlet 021, the air outlet 031, and the carrying surface 21 may be located at the same height within the process space 01, i.e., the lower edge of the air inlet 021, the lower edge of the air outlet 031, and the carrying surface 21 are all located at the same height within the process space 01; alternatively, the axis of the air inlet 021, the axis of the air outlet 031, and the carrying surface 21 are all located at the same height within the process space 01. In other embodiments, the height of the carrying surface 21 may be slightly lower than the heights of the air inlet 021 and the air outlet 031, so that after the substrate is placed on the carrying surface 21, the surface of the substrate facing away from the carrying surface 21 (i.e., the epitaxial growth basal surface) is exactly at the same height within the process space 01 as the air inlet 021 and the air outlet 031. In this case, the difference between the height of the supporting surface 21 and the height of the air inlet 021 is within a preset difference, and / or the difference between the height of the supporting surface 21 and the height of the exhaust port 031 is within a preset difference. The embodiment of the present application does not limit the size of the preset difference, and those skilled in the art can reasonably determine the size of the preset difference based on the thickness of different types and models of substrates.

[0069] Regardless of the structure, it is essential that during the epitaxial production process, the process gas be able to pass through the epitaxial growth base surface of the substrate in a direction parallel to the carrier surface 21, so as to achieve laminar flow of the process gas as much as possible and thereby avoid airflow turbulence as much as possible. It should be noted that, in this article, the airflow formed by the process gas flows through the carrier surface 21 in a laminar manner, which can be considered to mean that the flow direction of the process gas is parallel to the carrier surface 21, and the process gas will not be disturbed in a direction non-parallel to the carrier surface 21 (i.e., the airflow turbulence described above).

[0070] As described above, the exhaust channel includes multiple exhaust segments connected in sequence, at least one of which intersects the axis of exhaust port 031. In some embodiments, to allow the process gas to reverse direction as it flows toward second exhaust segment 04, thereby achieving a certain degree of obstruction and, consequently, a reduction in speed, the multiple exhaust segments include at least one first exhaust segment 03 and at least one second exhaust segment 04. The at least one first exhaust segment 03 extends parallel to the axis of exhaust port 031, while the at least one second exhaust segment 04 extends in a direction that intersects the axis of exhaust port 031. In other words, the through-direction of first exhaust segment 03 is inconsistent with the through-direction of second exhaust segment 04.

[0071] Furthermore, in some embodiments, one end of one of the first exhaust sections 03 serves as an exhaust port 031 communicating with the process space 01, and the other end is connected to one of the second exhaust sections 04. This allows the process gas to first enter the first exhaust section 03 through the exhaust port 031 without changing direction during this process, thereby allowing the process gas to smoothly enter the first exhaust section 03. Then, upon passing through the second exhaust section 04, the process gas changes direction and flows into the second exhaust section 04. During this process, the process gas is blocked to a certain extent, thereby being reduced in speed.

[0072] For example, the exhaust channel may include a first exhaust section 03 and a second exhaust section 04 that are interconnected. Specifically, the second exhaust section 04 is connected to the process space 01 through the first exhaust section 03, and the first exhaust section 03 and the second exhaust section 04 intersect. In other words, the through-direction of the first exhaust section 03 is inconsistent with the through-direction of the second exhaust section 04. The intersecting first exhaust section 03 and second exhaust section 04 enable the process gas to enter the first exhaust section 03 through the exhaust port 031 and then reverse direction to enter the second exhaust section 04 for ultimate discharge. During this process, the process gas needs to reverse direction as it flows toward the second exhaust section 04, thereby being blocked to a certain extent and subsequently slowed down.

[0073] In some embodiments, the first exhaust section 03 connected to the process space 01 and the second exhaust section 04 connected thereto may be perpendicular, that is, the angle between the through-direction of the first exhaust section 03 and the through-direction of the second exhaust section 04 is 90°. Of course, the through-direction of the first exhaust section 03 and the through-direction of the second exhaust section 04 may also be at other angles, such as 30°, 45°, 60°, 80°, etc., and the embodiments of the present application do not limit the angle between the through-direction of the first exhaust section 03 and the through-direction of the second exhaust section 04.

[0074] During epitaxial growth, process gas enters process space 01 through gas inlet 021 and passes through the substrate supported by support 20, where it is deposited on the substrate, thereby achieving epitaxial growth on the epitaxial growth base surface. After passing through the substrate, the process gas ultimately enters first exhaust section 03 through exhaust port 031. Because first exhaust section 03 and second exhaust section 04 intersect, the process gas reverses direction and enters second exhaust section 04, ultimately being discharged.

[0075] The process chamber of the epitaxial growth equipment disclosed in the embodiment of the present application is designed to have an exhaust channel with a structure including multiple exhaust sections connected in sequence (for example, including a first exhaust section 03 and a second exhaust section 04 connected in sequence), and at least one of the multiple exhaust sections intersects with the axis of the exhaust port (for example, the first exhaust section 03 and the second exhaust section 04 intersect), so that the process gas (i.e., waste gas) remaining after participating in the epitaxial growth process can be slowed down due to reversal during the exhaust process, thereby reducing the flow rate of the process gas in the area close to the exhaust channel in the process space 01, thereby avoiding the problem of air flow turbulence caused by excessive discharge of the process gas, thereby achieving the purpose of improving the uniformity of the process gas, and ultimately improving the thickness uniformity of the thin film formed by the epitaxial growth process.

[0076] Furthermore, this structure eliminates the need for flow leveling components near the exhaust duct within the process chamber, eliminating excessive obstruction to the process gas. Furthermore, during exhaust, the process gas can flow directly from process space 01 through exhaust port 031 into the exhaust duct, alleviating airflow turbulence caused by a sudden decrease in the flow area. This further improves process gas uniformity within the area near the exhaust duct within process space 01.

[0077] In addition, the process chamber of the epitaxial growth equipment disclosed in the embodiment of the present application does not need to add additional flow equalizers on the exhaust path, thereby saving the additional manufacturing costs caused by adding flow equalizers.

[0078] Furthermore, in some embodiments, the exhaust channel has the smallest flow area at the exhaust port 031 (the exhaust port 031 is a port of the exhaust channel). This allows the exhaust channel to easily form an exhaust structure with a small inlet and a large outlet. The exhaust channel having a smaller inlet can also alleviate the phenomenon of excessive exhaust of process gases to a certain extent. The exhaust channel having a larger outlet can prevent the process gases from being discharged too slowly once they enter the exhaust channel, thereby preventing gas accumulation. Since the front side of the exhaust channel has a small inlet and is close to the center of the cavity 10 and is in a high-temperature environment, the byproducts (coating) produced during the process adhere to the front side. By subsequently introducing etching gas into the cavity 10, the coating can be etched away and discharged quickly through the back side, which can significantly reduce the coating and avoid the problem of coating being produced on the back side and being difficult to etch away.

[0079] In the process chamber disclosed in the embodiment of the present application, the structure of the cavity 10 can be various, and accordingly, the structure of forming multiple exhaust sections connected in sequence (for example, including a first exhaust section 03 and a second exhaust section 04 connected in sequence) can also be various. The embodiment of the present application does not limit the specific structure of the cavity 10, and accordingly, the embodiment of the present application does not limit the structure of forming multiple exhaust sections connected in sequence (for example, including a first exhaust section 03 and a second exhaust section 04 connected in sequence).

[0080] In an embodiment in which one end of a first exhaust section 03 serves as an exhaust port 031 communicating with the process space 01, and the other end is connected to one of the second exhaust sections 04, the chamber 10 may include a top liner 14 and a bottom liner 15. Both the top liner 14 and the bottom liner 15 are disposed around the support base 20. The top liner 14 and the bottom liner 15 serve as linings on the inside of the chamber 10 and can function as protective components of the chamber 10 (e.g., the structure formed by the base ring 13, top cover 11, and bottom cover 12 described below). The first exhaust section 03 and the second exhaust section 04 are formed between the top liner 14 and the bottom liner 15. In this case, the top liner 14 and the bottom liner 15 can also function as the first exhaust section 03 and the second exhaust section 04, thereby allowing the top liner 14 and the bottom liner 15 to further possess other functions on top of their protective functions, achieving a dual-purpose effect. Of course, in some other embodiments, the cavity 10 may not include the top liner 14 and the bottom liner 15 . In this case, the first exhaust section 03 and the second exhaust section 04 may be formed on other components of the cavity 10 .

[0081] When the cavity 10 includes a top liner 14 and a bottom liner 15, the top liner 14 can be located above the bottom liner 15. Therefore, the top liner 14 forms the top wall of the first exhaust section 03, and the bottom liner 15 forms the bottom wall of the first exhaust section 03. A protrusion 141 can be provided on the portion of the top liner 14 adjacent to the exhaust port 031 that forms the top wall of the first exhaust section 03. Specifically, the protrusion 141 is located within the first exhaust section 03 adjacent to the exhaust port 031, and the exhaust passage has the smallest flow area at the protrusion 141.

[0082] Specifically, the top liner 14 is used to form the top wall of the first exhaust section 03, the bottom liner 15 is used to form the bottom wall of the first exhaust section 03, and the protrusion 141 is provided on the portion of the top liner 14 that forms the top wall of the first exhaust section 03. This structural design can reduce the flow area of ​​the exhaust channel at the exhaust port 031, thereby making the flow area of ​​the exhaust port 031 more likely to be smaller than the flow area of ​​other portions of the exhaust channel (the exhaust port 031 is a port of the exhaust channel), thereby making it easier for the exhaust channel to form an exhaust structure with a small inlet and a large outlet. The smaller inlet of the exhaust channel can also, to a certain extent, alleviate the phenomenon of excessive exhaust of process gas. The larger outlet of the exhaust channel can prevent the process gas from being discharged too slowly once it enters the exhaust channel, thereby preventing gas accumulation. Since the front side of the exhaust channel is a small inlet and is close to the center of the cavity 10 and is in a high-temperature environment, the by-products (coating) produced during the process adhere to the front side. By subsequently introducing etching gas into the cavity 10, the coating can be etched away and accelerated out through the back side, which can significantly reduce the coating and avoid the problem of coating generated on the back side that is difficult to etch away.

[0083] Furthermore, protrusion 141 is equivalent to adding an additional area to exhaust port 031, and exhaust port 031 is relatively close to process space 01, where the temperature is higher. This allows process gases to be deposited as much as possible on the surface of protrusion 141 facing process space 01 during the exhaust process. The surface of protrusion 141 facing process space 01 is actually part of the inner wall of chamber 10, making it easier to clean the thin film deposited on protrusion 141 during the subsequent cleaning and etching process, thus preventing process gases from being deposited more deeply in the exhaust channel, where they are difficult to clean or etch away.

[0084] It should be noted that, in this context, the top lining 14 being located above the bottom lining 15 means that, in the vertical direction, among the opposing portions of the top lining 14 and the bottom lining 15, the top lining 14 is higher than the opposing portions of the bottom lining 15. Alternatively, all portions of the top lining 14 may be higher than the entire bottom lining 15.

[0085] As described above, the top lining 14 and the bottom lining 15 can form a first exhaust section 03 and a second exhaust section 04. Specifically, different portions of the top lining 14 and the bottom lining 15 can be spaced apart to form the first exhaust section 03 and the second exhaust section 04, respectively. Based on this, in some embodiments, the outer edge of the top lining 14 facing away from the support seat 20 can be provided with a sheet-like protrusion 142. The sheet-like protrusion 142 is located on the outer side of the bottom lining 15 facing away from the support seat 20, and the second exhaust section 04 is formed between the sheet-like protrusion 142 and the outer wall of the bottom lining 15 facing away from the support seat 20. An exhaust port 031 is formed between the inner edge of the top lining 14 facing the support seat 20 and the inner edge of the bottom lining 15 facing the support seat 20.

[0086] The top liner 14 may have a first surface located between the exhaust port 031 and the second exhaust section 04 and facing downward, and the bottom liner 15 may have a second surface located between the exhaust port 031 and the second exhaust section 04 and facing upward. The first and second surfaces may form the first exhaust section 03. The first and second surfaces are, for example, both perpendicular to the vertical direction.

[0087] This method of forming the first exhaust section 03 and the second exhaust section 04 respectively by spacing different parts of the top lining 14 and the bottom lining 15 has the advantage of a simple structure.

[0088] In order to more easily form the second exhaust section 04 or form a second exhaust section 04 with a larger flow area, in some embodiments, the outer wall of the base 15 can be provided with a groove 151, and the inner wall of the groove 151 is spaced apart from the sheet-like protrusion 142 to form the second exhaust section 04.

[0089] As described above, the first exhaust section 03 and the second exhaust section 04 intersect, which requires the process gas to reverse direction as it enters the second exhaust section 04 from the first exhaust section 03. During this reversal, the process gas is more likely to swirl, particularly at the junction of the first and second exhaust sections 03, 04, causing a certain degree of blockage. In this case, the process gas is more likely to deposit within the first and second exhaust sections 03, 04. Based on this, in a further technical solution, the chamber 10 may be provided with a driving gas delivery hole 05. The driving gas delivery hole 05 communicates with the exhaust channel at a predetermined distance from the exhaust port 031. In an embodiment where one end of one of the first exhaust sections 03 serves as the exhaust port 031 and communicates with the process space 01, and the other end is connected to one of the second exhaust sections 04, the driving gas delivery hole 05 communicates with the second exhaust section 04. The driving gas delivery hole 05 is used to deliver driving gas to the exhaust channel (e.g., the second exhaust section 04) so ​​that the driving gas can accelerate the discharge of the process gas in the exhaust channel. Furthermore, in some embodiments, the driving gas delivery hole 05 is connected to the end of the second exhaust section 04 away from the first exhaust section 03, for delivering driving gas to this end, so that the driving gas can drive the process gas in the second exhaust section 04 to be discharged faster. This structure can prevent the process gas that has entered the exhaust channel from clogging, thereby allowing it to be discharged more smoothly. In the embodiment of the present application, the driving gas can be nitrogen, or other inert gas that does not affect the epitaxial growth process (such as argon or air). The embodiment of the present application does not limit the type of driving gas.

[0090] Of course, when the cavity 10 includes a liner 15, the liner 15 is disposed around the support base 20, and a portion of the liner 15 below the support base 20 may be provided with a driving gas delivery hole 05. In this case, the liner 15 also has the function of forming the driving gas delivery hole 05.

[0091] In an embodiment in which one end of a first exhaust segment 03 serves as an exhaust port 031 communicating with the process space 01, and the other end is connected to one of the second exhaust segments 04, the driving gas delivery hole 05 may intersect with the second exhaust segment 04. Specifically, the angle between the flow direction of the driving gas delivered by the driving gas delivery hole 05 and the flow direction of the process gas delivered by the second exhaust segment 04 may be an acute angle or a right angle. Of course, the embodiment of the present application does not limit the angle between the flow direction of the driving gas and the flow direction of the process gas delivered by the second exhaust segment 04, as long as the driving gas delivered by the driving gas delivery hole 05 can be delivered to the end of the second exhaust segment 04 away from the first exhaust segment 03 to help the process gas be discharged from the second exhaust segment 04 more quickly.

[0092] In the embodiment of the present application, the structure of the driving gas delivery hole 05 can be various. For example, the driving gas delivery hole 05 can be a hole of equal diameter or a hole of non-equal diameter. The embodiment of the present application does not limit the specific shape of the driving gas delivery hole 05, as long as the driving gas delivery hole 05 can deliver the driving gas to the second exhaust section 04 and drive the process gas in the second exhaust section 04 to accelerate the flow. In a further technical solution, the flow area of ​​the driving gas delivery hole 05 decreases along its gas delivery direction. For example, it can decrease in the direction approaching the second exhaust section 04. In other words, the flow area of ​​the driving gas delivery hole 05 decreases in the direction of driving gas delivery. In this case, as the driving gas flows through the driving gas delivery hole 05, the flow area of ​​the driving gas delivery hole 05 decreases, thereby achieving a better driving effect. This structure utilizes the Venturi effect. As the flow area of ​​the driving gas delivery hole 05 decreases, the driving gas is accelerated due to the decrease in the flow area. The accelerated driving gas can flow out at a higher speed, thereby better driving the process gas in the second exhaust section 04 to be discharged.

[0093] There can be one or more driving gas delivery holes 05. In the embodiment of the present application, both the first exhaust section 03 and the second exhaust section 04 are arc-shaped structures extending along the circumference of the process space 01. In an alternative embodiment, there are multiple driving gas delivery holes 05, spaced apart along the extension direction of the arc structure within the corresponding area of ​​the arc structure. In this case, the multiple driving gas delivery holes 05 can deliver gas to the end of the second exhaust section 04 facing away from the first exhaust section 03 from a wider range of dimensions, thereby achieving a better driving effect.

[0094] In an embodiment where the exhaust channel includes a first exhaust section 03 and a second exhaust section 04 connected in sequence, the process gas can be discharged directly from the second exhaust section 04 to the outside of the process chamber. However, the present application is not limited to this embodiment. The exhaust channel may also include more first exhaust sections 03 and / or second exhaust sections 04 to discharge the process gas outside the process chamber, or it may be discharged indirectly to the outside of the process chamber through additional structures. In one specific embodiment, the exhaust channel also includes another first exhaust section 03 located on the side of the second exhaust section 04 facing away from the carrier 20, hereinafter referred to as the third exhaust section 06. The first exhaust section 03 and the third exhaust section 06 may be connected to both ends of the second exhaust section 04 and extend in opposite directions. If the first exhaust section 03 extends toward the process space 01 relative to the second exhaust section 04, then the third exhaust section 06 extends in the opposite direction, thereby facilitating the discharge of the process gas away from the process space 01. In some embodiments, the third exhaust section 06 may be perpendicular to the second exhaust section 04. Of course, the present embodiment does not limit the specific angle between the third exhaust section 06 and the second exhaust section 04.

[0095] The embodiments of the present application do not limit on which component of the cavity 10 the third exhaust segment 06 is specifically set. In some embodiments, the cavity 10 may include a base ring 13, and the base ring 13 may be arranged around the bearing seat 20. The third exhaust segment 06 (that is, another first exhaust segment 03 located on the side of the second exhaust segment 04 facing away from the bearing seat 20) may be opened on the base ring 13 and extend radially along the base ring 13.

[0096] More specifically, the carrying surface 21 can be parallel to the horizontal plane, the first exhaust section 03 can be a horizontal exhaust section parallel to the carrying surface 21, and the second exhaust section 04 can be perpendicular to the first exhaust section 03, that is, the second exhaust section 04 can be a vertical exhaust section perpendicular to the carrying surface 21. The third exhaust section 06 can be parallel to the first exhaust section 03. When the first exhaust section 03 is parallel to the horizontal plane, the third exhaust section 06 can extend horizontally away from the process space 01 to the outer wall of the chamber 10. The outer wall of the chamber 10 can be a sidewall of the chamber 10 extending in the vertical direction, thereby facilitating connection with subsequent exhaust ducts.

[0097] In order to facilitate the discharge of process gas, in a further technical solution, the driving gas delivery hole 05 can be arranged at the junction of the third exhaust section 06 and the second exhaust section 04. This layout position is more conducive to the driving gas output from the driving gas delivery hole 05 driving the process gas from the second exhaust section 04 to the third exhaust section 06, thereby better avoiding the process gas from being retained in the second exhaust section 04.

[0098] In a further technical solution, third exhaust section 06 can be parallel to first exhaust section 03. Third exhaust section 06 has a first hole wall distal to first exhaust section 03 and a second hole wall proximal to first exhaust section 03. The distance between driving gas delivery hole 05 and the first hole wall can be a first distance, and the distance between driving gas delivery hole 05 and the second hole wall can be a second distance. The first distance can be greater than the second distance. In this case, driving gas delivery hole 05 is further away from the outlet of second exhaust section 04, thereby further facilitating the accelerated discharge of process gas within second exhaust section 04.

[0099] As described above, the driving gas delivery hole 05 is used to deliver driving gas. Specifically, the driving gas delivery hole 05 can be directly connected to the driving gas source. Of course, the driving gas delivery hole 05 can be indirectly connected to the driving gas source. Based on this, in some embodiments, the space below the support seat 20 in the cavity 10 can be provided with a driving gas cavity 07, and the driving gas delivery hole 05 can connect the driving gas cavity 07 with the exhaust channel (such as the second exhaust section 04), and the driving gas cavity 07 is connected to the driving gas source. In this case, the driving gas delivery hole 05 can be set to a hole with a smaller aperture, and the driving gas cavity 07 can be set to a larger volume. The driving gas enters the driving gas delivery hole 05 from the driving gas cavity 07, which is actually from a larger space into a smaller space. In this process, the driving gas is accelerated by one level due to the reduction in the flow area. When the flow area of ​​the driving gas delivery hole 05 decreases in the direction close to the second exhaust section 04, the driving gas can be accelerated twice after entering the driving gas delivery hole 05, and finally the driving gas can flow out at a higher flow rate, thereby achieving a better driving effect of the process gas.

[0100] In an embodiment of the present application, there may be one or more air inlet channels 02. In order to better ensure that the process gas introduced into the process space 01 by the air inlet channel 02 is as uniform as possible, there are multiple air inlet channels 02. In some embodiments, as shown in Figures 11 and 12, there may be multiple air inlet channels 02, and multiple air inlet channels 02 may be spaced apart in the cavity 10, and the width of the air inlet channel 02 increases along the air inlet direction. It should be noted that the width direction of the air inlet channel 02 is perpendicular to the air inlet direction and is parallel to the bearing surface 21 of the bearing seat 20. This structure enables the cross-sectional area of ​​the air inlet channel 02 to decrease along the air inlet direction. It should be noted that the cross section is a cross section of the air inlet channel 02 perpendicular to the air inlet direction. The cross-sectional area of ​​the air inlet channel 02 increases along the air inlet direction, which enables the air inlet channel 02 to form a structure similar to a bell mouth, as shown in Figure 12. This structure enables the distance between the air inlets 021 of two adjacent air inlet channels 02 to be smaller after the cavity 10 opens multiple air inlet channels 02, so that the process gases input into the process space 01 through the multiple air inlet channels 02 can be mixed in advance, thereby extending the pre-mixing time, making it easier to achieve more uniform mixing in the area close to the air inlet channels 02 in the process space 01, which is undoubtedly beneficial to improving the quality of epitaxial growth.

[0101] As described above, the structure of the chamber 10 can be various. In some embodiments, the chamber 10 can include an air inlet seat 16, a base ring 13, and a top liner 14 and a bottom liner 15, both of which surround the support seat 20. The top liner 14 is located above the bottom liner 15, and a first connecting channel 08 is formed between the top liner 14 and the bottom liner 15. The base ring 13 surrounds the top liner 14 and the bottom liner 15 and defines a second connecting channel 010. The air inlet seat 16 is located on the outside of the base ring 13, and the air inlet channel 02 is defined on the air inlet seat 16. The air inlet port 021, the second connecting channel 010, the first connecting channel 08, and the process space 01 are sequentially connected.

[0102] In a more specific structure, the cavity 10 may further include a top cover 11 and a bottom cover 12. The top cover 11 and the bottom cover 12 are respectively docked at the two ports of the base ring 13, thereby constituting most of the peripheral structure of the cavity 10 together with the base ring 13. The top cover 11, the bottom cover 12 and the base ring 13 enclose the cavity space 09, and the process space 01 is at least a part of the cavity space 09. The bearing seat 20 is arranged in the cavity space 09. The top lining 14 is detachably arranged on the inner wall of the top cover 11 and part of the inner wall of the base ring 13. The top lining 14 is used to protect the top cover 11 and the base ring 13. The bottom lining 15 is detachably arranged on part of the inner wall of the base ring 13. The top lining 14, the bottom lining 15 and the bearing seat 20 enclose the process space 01. The bottom lining 15 is used to cooperate with other components to form the process space 01, and is also used to protect the base ring 13.

[0103] A first connecting channel 08, a first exhaust section 03, and a second exhaust section 04 are formed between the top liner 14 and the bottom liner 15. The first connecting channel 08 connects the air inlet 021 and the process space 01. The first connecting channel 08 connects the air inlet 021 through the second connecting channel 010.

[0104] The chamber 10 of this structure forms the first connecting channel 08, the first exhaust section 03, and the second exhaust section 04 through the top liner 14 and the bottom liner 15. These liner 14 and the bottom liner 15 not only form the first exhaust section 03 and the second exhaust section 04, but also receive the thin films deposited by process gases during the epitaxial growth process, preventing these process gases from directly depositing on the top cover 11, the bottom cover 12, and the susceptor ring 13. If cleaning is necessary, operators only need to remove the top liner 14 and the bottom liner 15 for cleaning, eliminating the need to clean the bulky top cover 11, the bottom cover 12, and the susceptor ring 13. Furthermore, the top liner 14 and the bottom liner 15 also protect the top cover 11, the bottom cover 12, and the susceptor ring 13.

[0105] Of course, when the cavity 10 includes a top cover 11, a bottom cover 12, a base ring 13, a top lining 14 and a bottom lining 15, and the cavity 10 is provided with a driving gas cavity 07, the bottom cover 12, the supporting seat 20 and the bottom lining 15 can form the driving gas cavity 07, and the driving gas cavity 07 can be located below the supporting seat 20.

[0106] As mentioned above, the air inlet channel 02 can be provided on the air inlet seat 16. The air inlet seat 16 is located on the outer wall of the base ring 13. The base ring 13 can be provided with a second connecting channel 010, which sequentially connects the air inlet 021, the second connecting channel 010, the first connecting channel 08, and the process space 01. To ensure uniform air intake, the air inlet channel 02 is provided on a dedicated component. This facilitates structural design and avoids overly complex air intake structures on the base ring 13, the top cover 11, or the bottom cover 12.

[0107] In a further technical solution, the chamber 10 may further include multiple air inlet pipes 17, each of which is connected to the air inlet seat 16 and communicates with a corresponding air inlet channel 02. Each of the multiple air inlet pipes 17 may be provided with a flow control valve, which controls the air intake of the corresponding air inlet pipe 17. This enables the multiple air inlet channels 02 connected to the multiple air inlet pipes 17 to cooperate with each other. Through the coordination of the intake air flow, the airflow entering the process space 01 is made as uniform as possible. At the same time, the flow control valve can more easily achieve flow control.

[0108] In some embodiments, the third exhaust section 06 described above can be provided on the base ring 13. In a further technical solution, the cavity 10 disclosed in the embodiment of the present application can also include an exhaust seat 18, which is provided on the outer wall of the base ring 13 and communicates with the third exhaust section 06.

[0109] During the epitaxial growth process, the temperature within the process space 01 needs to meet preset requirements. Based on this, the process chamber disclosed in the embodiment of the present application may further include an upper heating module 30. The upper heating module 30 is provided on the cavity 10 and is located above the carrier 20. The upper heating module 30 is used to heat the carrier 20 from above, thereby achieving heating of the substrate supported on the carrier 20 during the epitaxial growth process.

[0110] In the embodiment of the present application, the upper heating module 30 can have various structures and types, and the embodiment of the present application does not limit the specific structure and type of the upper heating module 30. For example, the upper heating module 30 can include multiple light-emitting heating elements, which are arranged in a circle and distributed above the support base 20, and emit light from above the support base 20 toward the substrate on the support base 20 to achieve heating. Of course, this distribution method can only make the temperature of a certain circle area on the substrate of the support base 20 higher, while the temperature of other areas may be lower. Overall, the upper heating module 30 with this structure will still lead to uneven temperature in the process space 01.

[0111] Based on this, in other embodiments, referring to FIG. 12 , the present application discloses a more specific upper heating module 30. The upper heating module 30 disclosed herein may include a plurality of first outer zone heating lamps 31, a plurality of first inner zone heating lamps 32, a first reflector 33, and a second reflector 34. The support surface 21 of the support base 20 includes a central region and an annular region surrounding the central region. The plurality of first outer zone heating lamps 31 and the plurality of first inner zone heating lamps 32 are distributed along the circumference of the annular region, with the plurality of first outer zone heating lamps 31 located outside the plurality of first inner zone heating lamps 32. The first reflector 33 is configured to reflect light projected by the plurality of first outer zone heating lamps 31 toward the annular region, and the second reflector 34 is configured to reflect light projected by the plurality of first inner zone heating lamps 32 toward the central region. This solution enables the upper heating module 30 to heat the support base 20 in zones, thereby effectively balancing temperature regulation in different zones of the support base 20.

[0112] At the same time, during the specific heating process, multiple first outer zone heating lamps 31 can be controlled separately, and multiple first inner zone heating lamps 32 can be controlled separately, thereby achieving more flexible temperature control, which is more conducive to improving the uniformity of the temperature field in the process space 01.

[0113] Because both the multiple first outer zone heating lamps 31 and the multiple first inner zone heating lamps 32 can project light onto the support base 20, and given that the annular area is close to the edge of the support base 20, while the central area is located in the center of the support base 20, heat is more likely to accumulate, resulting in a higher temperature within the annular area. With this in mind, referring again to Figure 12 , in a further technical solution, the multiple first outer zone heating lamps 31 are shorter than the multiple first inner zone heating lamps 32. In other words, the multiple first outer zone heating lamps 31 are closer to the support base 20 than the multiple first inner zone heating lamps 32. In this case, the multiple first inner zone heating lamps 32, due to their greater distance, do not deliver as much heat to the central area, making it easier to achieve temperature consistency between the central area and the outer annular area.

[0114] Similarly, in order to better ensure the process temperature, please refer to Figure 12 again. The process chamber disclosed in the embodiment of the present application may also include a lower heating module 40. The lower heating module 40 is arranged on the cavity 10. The lower heating module 40 is located below the carrier seat 20. The lower heating module 40 is used to heat toward the carrier seat 20 below the carrier seat 20.

[0115] In the embodiments of the present application, the lower heating module 40 can have various structures and types, and the embodiments of the present application do not limit the specific structure and type of the lower heating module 40. For example, the lower heating module 40 can also include multiple light-emitting heating elements, which are arranged in a circle and distributed below the support base 20, and emit light from below the support base 20 to achieve heating. Of course, this distribution method can only make the temperature of a certain circle area on the substrate of the support base 20 higher, while the temperature of other areas may be lower, which will lead to uneven temperature in the process space 01.

[0116] Similarly, the present embodiment discloses a lower heating module 40 with a specific structure. Referring again to FIG. 12 , the disclosed lower heating module 40 may include multiple second outer zone heating lamps 41, multiple second inner zone heating lamps 42, a third reflector 43, and a fourth reflector 44. Similarly, when the support base 20 includes a central region and an annular region surrounding the central region, the multiple second outer zone heating lamps 41 and the multiple second inner zone heating lamps 42 are both distributed along the circumference of the annular region, with the multiple second outer zone heating lamps 41 located outside the multiple second inner zone heating lamps 42. The third reflector 43 is configured to reflect light projected by the multiple second outer zone heating lamps 41 toward the annular region, and the fourth reflector 44 is configured to reflect light projected by the multiple second inner zone heating lamps 42 toward the central region. This solution enables the lower heating module 40 to heat the support base 20 in different zones, thereby effectively balancing temperature regulation in different zones of the support base 20.

[0117] At the same time, during the specific heating process, multiple second outer zone heating lamps 41 can be controlled separately, and multiple second inner zone heating lamps 42 can be controlled separately, thereby achieving more flexible temperature control, which is more conducive to improving the uniformity of the temperature field in the process space 01.

[0118] Similarly, since both the plurality of second outer zone heating lamps 41 and the plurality of second inner zone heating lamps 42 can project light onto the support base 20, and considering that the annular region is close to the edge of the support base 20, while the central region is located at the center of the support base 20, heat is more likely to accumulate, resulting in a higher temperature than the annular region. Therefore, in a further technical solution, the height of the plurality of second inner zone heating lamps 42 is less than that of the plurality of second outer zone heating lamps 41. In other words, the distance between the plurality of second inner zone heating lamps 42 and the support base 20 is greater than the distance between the plurality of second outer zone heating lamps 41 and the support base 20. In this case, due to the greater distance between the plurality of second inner zone heating lamps 42 and the support base 20, they do not deliver too much heat to the central region, thereby ensuring that the temperature of the central region and the outer annular region are consistent.

[0119] To further optimize the adjustment effect, in a further technical solution, the reflection angle of at least one of the first reflector 33, the second reflector 34, the third reflector 43, and the fourth reflector 44 is adjustable. Specifically, a driving mechanism can be separately configured for at least one of the first reflector 33, the second reflector 34, the third reflector 43, and the fourth reflector 44, and the driving mechanism drives the first reflector 33, the second reflector 34, the third reflector 43, and the fourth reflector 44 to rotate, thereby adjusting the inclination angle of the reflecting surface, thereby achieving the purpose of adjusting the reflection angle. There are many types of driving mechanisms, such as a connecting rod driving mechanism and a motor driving mechanism. The embodiments of the present application do not limit the specific type of driving mechanism.

[0120] Based on the process chamber disclosed in the embodiments of the present application, the embodiments of the present application disclose an epitaxial growth device, and the disclosed epitaxial growth device includes the process chamber described in the above embodiments.

[0121] The above embodiments of this application focus on the differences between the various embodiments. As long as the different technical features of the various embodiments are not contradictory, they can be combined to form more specific embodiments. Considering the simplicity of the text, they will not be repeated here.

[0122] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. An upper liner ring for a vapor deposition process chamber, characterized in that: It comprises a first ring body, a first flow guide and a second flow guide, wherein: The first flow guide member and the second flow guide member are arranged opposite to each other and protrude from the lower end surface of the first ring body. The first end of the first flow guide member and the first end of the second flow guide member are both located on the air inlet side of the upper liner ring, and the second end of the first flow guide member and the second end of the second flow guide member are both located on the exhaust side of the upper liner ring. The air inlet side of the upper liner ring and the exhaust side of the upper liner ring are opposite sides of the upper liner ring. In the direction from the air inlet side to the exhaust side, the distance between the first flow guide member and the second flow guide member gradually decreases.

2. The upper liner ring according to claim 1, characterized in that: The first guide member and the second guide member are symmetrically distributed with the first axis as the symmetry axis, and the first axis is the central axis of the upper backing ring extending from the air intake side of the upper backing ring to the exhaust side of the upper backing ring.

3. The upper bushing ring according to claim 1, characterized in that: The first flow guide member and the second flow guide member are both made of quartz material.

4. The upper backing ring according to claim 1, characterized in that: The distance between the first end of the first flow guide and the first end of the second flow guide is a first distance, and the distance between the second end of the first flow guide and the second end of the second flow guide is a second distance, wherein: The ratio of the first distance to the inner diameter of the upper liner ring is greater than 1; and / or, The ratio of the second distance to the inner diameter of the upper liner ring is less than 1; and / or, The ratio of the difference between the first distance and the second distance to the inner diameter of the upper liner ring is greater than or equal to 1 / 6 and less than or equal to 1 / 3; and / or, The ratio of the first distance to the second distance is 1.2 to 1.4; and / or, The distance between the first guide member and the second guide member in the direction perpendicular to the first axis The ratio of the distance to the inner diameter of the upper liner ring is 0.5 to 1.6, or the ratio of the distance between the first guide member and the second guide member in a direction perpendicular to the first axis to the inner diameter of the upper liner ring is 0.75 to 1.25, and the first axis is the central axis of the upper liner ring extending from the air intake side of the upper liner ring to the exhaust side of the upper liner ring.

5. The upper backing ring according to claim 1, characterized in that: The opposite inner edges of the first flow guide and the second flow guide each include an arc-shaped flow guide segment protruding in a direction away from each other.

6. The upper backing ring according to claim 5, characterized in that: The ratio of the inner diameter of the upper liner ring to the diameter of the circle where the arc-shaped guide section is located is greater than or equal to 0.6 and less than or equal to 0.

8.

7. The upper bushing ring according to claim 5, characterized in that: The distance reduction amplitude between a section of the first guide member located on the air intake side of the upper liner ring and a section of the second guide member located on the air intake side of the upper liner ring is a first distance reduction amplitude, and the distance reduction amplitude between a section of the first guide member located on the exhaust side of the upper liner ring and a section of the second guide member located on the exhaust side of the upper liner ring is a second distance reduction amplitude, and the first distance reduction amplitude is smaller than the second distance reduction amplitude.

8. The upper bushing ring according to claim 7, characterized in that: The relative inner edges of the first guide member and the second guide member also include a first straight guide segment and a second straight guide segment respectively connected to the two ends of the arc-shaped guide segment, the first straight guide segment and the second straight guide segment are both tangent to the circular inner wall of the upper liner ring, and the arc-shaped guide segment is circumscribed to the circular inner wall of the upper liner ring.

9. The upper backing ring according to claim 8, characterized in that: The first straight guide section and the second straight guide section are both inclined relative to a first axis, and an angle between the first straight guide section and the first axis is smaller than an angle between the second straight guide section and the first axis. The first axis is a central axis of the upper liner ring extending from the air intake side of the upper liner ring to the exhaust side of the upper liner ring.

10. The upper backing ring according to claim 9, characterized in that: The included angle between the first straight flow guide section and the first axis is 3-10°, and the included angle between the second straight flow guide section and the first axis is 10-20°.

11. The upper backing ring according to claim 1, characterized in that: An air intake gap is formed on the air intake side of the upper liner ring, and the first flow guide member, the second flow guide member and the first ring body form the air intake gap.

12. The upper backing ring according to claim 1, characterized in that: In the direction from the air inlet side of the upper backing ring to the exhaust side of the upper backing ring, the size of the first guide member and the second guide member is 350 mm to 400 mm; and / or, The dimensions of the first flow guide and the second flow guide in a direction protruding from the lower end surface of the first ring body are 24 mm to 30 mm.

13. The upper backing ring according to claim 1, characterized in that: The upper liner ring includes a baffle located on the exhaust side, the baffle protrudes from the lower end surface of the first ring body and is located at the outer edge of the first ring body. The baffle is used to form a part of the exhaust channel of the vapor deposition process chamber with a part of the outer peripheral wall of the lower liner ring.

14. A lower liner ring for a vapor deposition process chamber, characterized in that: The lower liner ring includes a second ring body, the second ring body is provided with a film transmission opening, the outer peripheral wall of the second ring body is provided with an annular groove, the annular groove is located below the film transmission opening, the area of ​​the circular area enclosed by the circular inner wall of the lower liner ring is the first area, the cross-sectional area of ​​the annular groove is the second area, and the ratio of the first area to the second area is greater than 600.

15. The lower backing ring according to claim 14, characterized in that: The inner diameter of the lower liner ring ranges from 400 mm to 600 mm, and the ratio of the first area to the second area is less than 2000; Alternatively, the inner diameter of the lower liner ring is in the range of 300 mm to 500 mm, and the ratio of the first area to the second area is less than 1500.

16. The lower backing ring according to claim 15, characterized in that: When the inner diameter of the lower liner ring is in the range of 400 mm to 600 mm, the ratio of the first area to the second area is 1050 to 1350; Alternatively, the inner diameter of the lower liner ring is in the range of 300 mm to 500 mm, and the ratio of the first area to the second area is 750 to 900.

17. The lower backing ring according to claim 14, characterized in that: The annular groove is used to communicate with the process space, the air inlet channel and the exhaust channel of the vapor deposition process chamber through an annular assembly gap, and the annular assembly gap is formed between the lower liner ring and the cavity of the vapor deposition process chamber.

18. The lower backing ring according to claim 14, characterized in that: The lower liner ring also includes an annular flange which is arranged at the top end of the second ring body and extends toward the inner side of the second ring body, and the annular flange is used to support a preheating ring arranged around the supporting seat of the vapor deposition process chamber.

19. The lower backing ring according to claim 18, characterized in that: An annular positioning groove is provided on the inner edge of the annular flange, and the annular positioning groove is used for positioning and cooperating with the edge of the preheating ring.

20. The lower backing ring according to claim 14, characterized in that: A recessed platform is provided at a portion of the outer peripheral wall of the lower liner ring close to the exhaust side thereof, and the recessed platform is used to form at least a portion of the exhaust channel of the vapor deposition process chamber together with the upper liner ring of the vapor deposition process chamber.

21. The lower backing ring according to claim 20, characterized in that: A gas delivery hole is provided on one side of the lower liner ring. The gas delivery hole penetrates from the circular inner wall of the lower liner ring to the outer peripheral wall of the lower liner ring, is located above the concave platform, and is used to communicate with the exhaust channel.

22. The lower backing ring according to claim 21, characterized in that: The concave platform is an arc-shaped structure extending along the circumferential direction of the lower liner ring. There are multiple gas delivery holes, and the multiple gas delivery holes are distributed at intervals along the circumferential direction.

23. The lower backing ring according to claim 21 or 22, characterized in that: The flow area of ​​the gas delivery hole decreases gradually in a direction approaching the concave platform.

24. A liner for a vapor deposition process chamber, characterized in that: It comprises the upper backing ring described in any one of claims 1 to 13 and / or the lower backing ring described in any one of claims 14 to 23.

25. The liner according to claim 24, characterized in that An air inlet is formed between ends of the upper and lower liner rings located on the air inlet side of the liner.

26. The liner according to claim 24, characterized in that An exhaust port is formed between ends of the upper and lower backing rings located on the exhaust side of the inner liner.

27. A liner for a vapor deposition process chamber, characterized in that: The liner includes a first flow guide and a second flow guide located between an air intake side of the liner and an exhaust side of the liner and arranged opposite to each other, a first end of the first flow guide and a first end of the second flow guide are both located on the air intake side of the liner, a second end of the first flow guide and a second end of the second flow guide are both located on the exhaust side of the liner, the air intake side of the liner and the exhaust side of the liner are opposite sides of the liner, and a distance between the first flow guide and the second flow guide gradually decreases in a direction from the air intake side to the exhaust side, and / or, An annular groove is provided on the outer peripheral wall of the lining, and the annular groove is located below the film transmission port of the lining. The area of ​​the circular region enclosed by the circular inner wall of the lining is the first area, and the cross-sectional area of ​​the annular groove is the second area. The ratio of the first area to the second area is greater than 600.

28. The liner according to claim 27, characterized in that The first guide member and the second guide member are symmetrically distributed with the first axis as the symmetry axis, and the first axis is the central axis of the liner extending from the air intake side of the liner to the exhaust side of the liner.

29. The liner according to claim 27, characterized in that The first flow guide member and the second flow guide member are both made of quartz material.

30. The liner according to claim 27, characterized in that The distance between the first end of the first flow guide and the first end of the second flow guide is a first distance, and the distance between the second end of the first flow guide and the second end of the second flow guide is a second distance, wherein: The ratio of the first distance to the inner diameter of the liner is greater than 1; and / or, The ratio of the second distance to the inner diameter of the liner is less than 1; and / or, The ratio of the difference between the first distance and the second distance to the inner diameter of the liner is greater than or equal to 1 / 6 and less than or equal to 1 / 3; and / or, The ratio of the first distance to the second distance is 1.2 to 1.4; and / or, The ratio of the distance between the first flow guide and the second flow guide in a direction perpendicular to the first axis to the inner diameter of the liner is 0.5 to 1.6, or the ratio of the distance between the first flow guide and the second flow guide in a direction perpendicular to the first axis to the inner diameter of the liner is 0.75 to 1.25, and the first axis is the central axis of the liner extending from the air intake side of the liner to the exhaust side of the liner.

31. The liner according to claim 27, characterized in that The opposite inner edges of the first flow guide and the second flow guide each include an arc-shaped flow guide segment protruding in a direction away from each other.

32. The liner according to claim 31, characterized in that The ratio of the inner diameter of the lining to the diameter of the circle where the arc-shaped guide section is located is greater than or equal to 0.6 and less than or equal to 0.

8.

33. The liner according to claim 31, characterized in that The distance reduction amplitude between a section of the first flow guide located on the air intake side of the liner and a section of the second flow guide located on the air intake side of the liner is a first distance reduction amplitude, and the distance reduction amplitude between a section of the first flow guide located on the exhaust side of the liner and a section of the second flow guide located on the exhaust side of the liner is a second distance reduction amplitude, and the first distance reduction amplitude is smaller than the second distance reduction amplitude.

34. The liner according to claim 33, characterized in that The relative inner edges of the first guide member and the second guide member each include a first straight guide segment and a second straight guide segment respectively connected to the two ends of the arc-shaped guide segment, the first straight guide segment and the second straight guide segment are both tangent to the circular inner wall of the liner, and the arc-shaped guide segment is circumscribed to the circular inner wall of the liner.

35. The liner according to claim 34, characterized in that The first straight guide section and the second straight guide section are both inclined relative to a first axis, and an angle between the first straight guide section and the first axis is smaller than an angle between the second straight guide section and the first axis. The first axis is a central axis of the liner extending from the air intake side of the liner to the exhaust side of the liner.

36. The liner according to claim 35, characterized in that The included angle between the first straight flow guide section and the first axis is 3° to 10°, and the included angle between the second straight flow guide section and the first axis is 10° to 20°.

37. The liner of claim 27, wherein: In the direction from the air inlet side of the liner to the exhaust side of the liner, the size of the first guide member and the second guide member is 350 mm to 400 mm; and / or, The dimensions of the first flow guide and the second flow guide in the axial direction of the liner are 24 mm to 30 mm.

38. The liner of claim 27, wherein: The liner includes an upper liner ring and a lower liner ring located below the upper liner ring, the upper liner ring is coaxially arranged with the lower liner ring, the upper liner ring includes a first ring body and a baffle located on the exhaust side of the upper liner ring and protruding from the lower end surface of the first ring body, the baffle is located on the outer edge of the first ring body, and the baffle is used to form a part of the exhaust channel of the vapor deposition process chamber together with a part of the outer peripheral wall of the lower liner ring.

39. The liner of claim 27, wherein: The annular groove is used to communicate with the process space, the air inlet channel and the exhaust channel of the vapor deposition process chamber through an annular assembly gap, and the annular assembly gap is formed between the liner and the cavity of the vapor deposition process chamber.

40. The liner of claim 27, wherein: The liner includes a second ring body and an annular flange disposed at the top of the second ring body and extending toward the inner side of the second ring body, wherein the annular flange is used to support a preheating ring disposed around a supporting seat of the vapor deposition process chamber.

41. The liner according to claim 40, characterized in that An annular positioning groove is provided on the inner edge of the annular flange, and the annular positioning groove is used for positioning and cooperating with the edge of the preheating ring.

42. The liner according to claim 40, characterized in that The liner also includes an upper liner ring; a recess is provided at a portion of the outer peripheral wall of the second ring body close to the exhaust side, and the recess is used to form at least a portion of the exhaust channel of the vapor deposition process chamber between the upper liner ring.

43. The liner according to claim 42, characterized in that A gas delivery hole is provided on one side of the second ring body. The gas delivery hole penetrates from the circular inner wall of the second ring body to the outer peripheral wall of the second ring body and is located above the concave platform and is used to communicate with the exhaust channel.

44. The liner according to claim 43, characterized in that The concave platform is an arc-shaped structure extending along the circumferential direction of the second ring body. There are a plurality of gas delivery holes, and the plurality of gas delivery holes are distributed at intervals along the circumferential direction.

45. The liner according to claim 43 or 44, characterized in that The flow area of ​​the gas delivery hole decreases gradually in a direction approaching the concave platform.

46. ​​The liner of claim 27, wherein: The first flow guide and the second flow guide are arranged close to the top of the liner, and the annular groove is located below the first flow guide and the second flow guide.

47. The liner of claim 27, wherein: The inner diameter of the liner ranges from 400 mm to 600 mm, and the ratio of the first area to the second area is less than 2000; Alternatively, the inner diameter of the liner is in the range of 300 mm to 500 mm, and the ratio of the first area to the second area is less than 1500.

48. The liner of claim 27, wherein: When the inner diameter of the liner is in the range of 400 mm to 600 mm, the ratio of the first area to the second area is 1050 to 1350; Alternatively, the inner diameter of the liner is in the range of 300 mm to 500 mm, and the ratio of the first area to the second area is 750 to 900.

49. An air inlet liner for a vapor deposition process chamber, characterized in that: Used to connect with the air inlet of the liner described in any one of claims 24 to 48, the air inlet lining body is provided with a plurality of air inlet holes, the plurality of air inlet holes are arranged in a first direction and isolated from each other, the through directions of the plurality of air inlet holes are consistent, and the first direction is perpendicular to the through directions of the air inlet holes.

50. The air intake liner according to claim 49, characterized in that The air intake liner is an integral structure and includes a first set and a plurality of first isolation members located within the first set. The plurality of first isolation members divide the space within the first set to form the plurality of air intake holes.

51. The air intake liner according to claim 49, characterized in that The air intake liner is a split structure and includes a plurality of second sets, the plurality of second sets are arranged in sequence in the first direction, and two adjacent second sets are in contact; in the plurality of second sets: Each of the second kits is used to form one of the air inlet holes; or, each of the second kits is provided with at least one second isolating member so that the second kits form at least two of the air inlet holes; or, a portion of the second kits forms one of the air inlet holes, and another portion of the second kits is provided with at least one second isolating member so that the corresponding second kits form at least two of the air inlet holes.

52. The air intake liner according to claim 51, characterized in that A second isolation piece is provided in each of the two second sets located at the two opposite side edges of the air inlet liner to form two air inlet holes respectively serving as an auxiliary gas hole and a process gas hole. The process gas hole is located on the inner side of the auxiliary gas hole, and the size of the auxiliary gas hole in the first direction is smaller than the size of the process gas hole in the first direction.

53. The air intake liner according to claim 49, characterized in that The air intake lining is a flat structure, and has a top straight wall and a bottom straight wall. The top straight wall and the bottom straight wall are respectively parallel to the through direction and the first direction. The air intake lining has two arcuate side walls, and the two arcuate side walls respectively constitute two opposite side edges of the air intake lining. The two arcuate side walls are arranged opposite to each other and protrude in directions away from each other. The two arcuate side walls are connected between the top straight wall and the bottom straight wall.

54. The air intake liner according to claim 49, characterized in that The material of the air intake liner is quartz material.

55. The air intake liner according to claim 49, characterized in that The multiple air inlet holes are all flat holes, and the size of the air inlet holes in the first direction is larger than the size in the second direction, and the second direction is perpendicular to the through direction and the first direction respectively.

56. The air intake liner according to claim 49, characterized in that Among the plurality of air inlet holes, two air inlet holes respectively adjacent to two opposite side edges of the air inlet liner are both auxiliary gas holes, and the other air inlet holes between the two auxiliary gas holes are process gas holes.

57. The air intake liner according to claim 56, characterized in that A size of the process gas hole in the first direction is greater than a size of the auxiliary gas hole in the first direction.

58. The air intake liner according to claim 56, characterized in that The air intake width formed by the multiple air intake holes in the first direction is a first air intake width, the air intake width formed by the two auxiliary gas holes in the first direction is a second air intake width, and the ratio of the second air intake width to the first air intake width is 1:25 to 1:

10.

59. The air intake liner according to claim 56, characterized in that The air inlet liner is used in a vapor deposition process chamber, which includes a cavity and a support seat arranged in the cavity, and the auxiliary gas hole is opposite to the inner side of the edge of the support seat, or the auxiliary gas hole is opposite to the outer side of the edge of the support seat.

60. A process chamber, characterized in that: It comprises a cavity and an air inlet liner as described in any one of claims 52, 56 to 58, wherein the process chamber has a process space, the air inlet liner is arranged in the side wall of the cavity, and the multiple air inlet holes are connected to the process space.

61. The process chamber according to claim 60, characterized in that The process chamber further comprises a support seat disposed in the cavity, and the auxiliary gas hole is opposite to the inner side of the edge of the support seat, or the auxiliary gas hole is opposite to the outer side of the edge of the support seat.

62. The process chamber according to claim 60 or 61, characterized in that The air intake liner is detachably mounted on the cavity; or, the corrosion resistance of the air intake liner is higher than that of the cavity.

63. A vapor deposition process chamber, characterized in that: It comprises a cavity and a lining arranged in the cavity, and the lining is the lining according to any one of claims 24-48.

64. A vapor deposition process chamber, characterized in that: It comprises a cavity and a liner arranged in the cavity, wherein the liner is a split structure, and the liner comprises an upper liner ring according to any one of claims 1 to 13 and a lower liner ring according to any one of claims 14 to 23.

65. The vapor deposition process chamber according to claim 63 or 64, characterized in that: The vapor deposition process chamber further comprises an air inlet liner as described in any one of claims 49 to 59.

66. The vapor deposition process chamber according to claim 64 or 65, characterized in that: The vapor deposition process chamber also includes a support seat located within the cavity, and the cavity includes a top cover, which is at least used to form a cavity top wall located above the liner, and the cavity top wall is located above the support seat and protrudes toward the direction close to the support seat.

67. The vapor deposition process chamber according to claim 64 or 65, characterized in that: The vapor deposition process chamber further includes a support seat located in the chamber, and a plurality of first outer zone heating lamps, a plurality of first inner zone heating lamps, a first reflector, and a second reflector, all of which are arranged on the chamber and above the support seat; The supporting base includes a central area and an annular area surrounding the central area. The multiple first outer area heating lamps and the multiple first inner area heating lamps are distributed along the circumferential direction of the annular area, and the multiple first outer area heating lamps are located on the outside of the multiple first inner area heating lamps. The first reflector is used to reflect the light projected by the multiple first outer area heating lamps to the annular area, and the second reflector is used to reflect the light projected by the multiple first inner area heating lamps to the central area. The height of the multiple first outer area heating lamps is less than the height of the multiple first inner area heating lamps.

68. The vapor deposition process chamber according to claim 67, characterized in that: The process chamber also includes a plurality of second outer zone heating lamps, a plurality of second inner zone heating lamps, a third reflector and a fourth reflector, all of which are arranged on the cavity and located below the supporting seat. The plurality of second outer zone heating lamps and the plurality of second inner zone heating lamps are distributed along the circumferential direction of the annular area, and the plurality of second outer zone heating lamps are located outside the plurality of second inner zone heating lamps. The third reflector is used to reflect the light projected by the plurality of second outer zone heating lamps to the annular area, and the fourth reflector is used to reflect the light projected by the plurality of second inner zone heating lamps to the central area. The height of the plurality of second outer zone heating lamps is greater than the height of the plurality of second inner zone heating lamps.

69. The vapor deposition process chamber according to claim 68, characterized in that: The reflection angle of at least one of the first reflection element, the second reflection element, the third reflection element and the fourth reflection element is adjustable.

70. A semiconductor process equipment, characterized in that: It comprises a transfer chamber and a vapor deposition process chamber as described in any one of claims 63-69, wherein the transfer chamber cooperates with the vapor deposition process chamber.

71. A process chamber, characterized in that: The process chamber comprises a cavity, a bearing seat and an inner liner arranged in the cavity, the inner liner comprises an annular liner, the annular liner is arranged around the bearing seat, at least the bearing seat and the annular liner form a process space, the process chamber has an air inlet channel, an exhaust channel and a protective gas channel, the air inlet channel and the exhaust channel both penetrate the cavity and the inner liner and communicate with the process space; An annular groove is provided on the outer peripheral wall of the annular liner and / or the inner peripheral wall of the cavity, an annular assembly gap is provided between the annular liner and the cavity, and the annular groove is connected with the process space, the air inlet channel and the exhaust channel through the annular assembly gap; The protective gas channel is in communication with the annular groove, and the protective gas channel is used to receive protective gas so that the protective gas enters the annular assembly gap through the annular groove.

72. The process chamber according to claim 71, characterized in that The area of ​​the circular region enclosed by the inner diameter of the annular liner is a first area, the cross-sectional area of ​​the annular groove is a second area, and the ratio of the first area to the second area is greater than 600.

73. The process chamber according to claim 71, characterized in that The cavity includes a base ring arranged around the annular liner, the air inlet passage passes through the annular liner and the base ring, the outer circumferential wall of the annular liner and / or the inner circumferential wall of the base ring are provided with the annular groove, and the annular assembly gap is provided between the annular liner and the base ring.

74. The process chamber according to claim 73, characterized in that The annular groove is only formed on the outer peripheral wall of the annular liner.

75. The process chamber according to claim 71, characterized in that The inner liner includes an upper liner ring and a lower liner ring located below the upper liner ring and docking with the upper liner ring, and the upper liner ring includes a first ring body surrounding the bearing seat; The lower backing ring comprises a second ring body surrounding the bearing seat, and the first ring body and the second ring body are coaxially arranged; The annular groove is formed on the outer peripheral wall of at least one of the first ring body and the second ring body, and the annular assembly gap is formed between the first ring body and the second ring body and the cavity.

76. The process chamber according to claim 75, characterized in that The length of the upper liner ring in a direction perpendicular to the bearing surface of the bearing seat is smaller than the length of the lower liner ring in a direction perpendicular to the bearing surface. The annular groove is formed on the outer peripheral wall of the lower liner ring and is located below the exhaust passage.

77. The process chamber according to claim 76, characterized in that The exhaust channel includes a first exhaust section, a second exhaust section and a third exhaust section, the air intake channel has an air intake port connected to the process space, the first exhaust section has an exhaust port connected to the process space, the second exhaust section is connected to the process space through the first exhaust section, and the first exhaust section intersects with the second exhaust section, the air intake port and the exhaust port are respectively located on opposite sides of the bearing seat, the axis of the air intake port and the axis of the exhaust port are parallel to the bearing surface of the bearing seat, the second exhaust section is connected to the third exhaust section, and the third exhaust section is parallel to the first exhaust section.

78. The process chamber according to claim 77, characterized in that The first exhaust section is located above the second exhaust section, and the annular groove is located below the connection between the second exhaust section and the third exhaust section.

79. The process chamber according to claim 77, characterized in that A protrusion is provided at a position adjacent to the exhaust port in the first exhaust section, the upper liner ring is used to form the top wall of the first exhaust section, the lower liner ring is used to form the bottom wall of the first exhaust section, and the protrusion is provided on the position of the upper liner ring used to form the top wall of the first exhaust section.

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