Semiconductor device and vehicle

Abstract

This semiconductor device includes a first terminal and a first semiconductor element conductively joined to the first terminal. The first terminal has a first main surface facing one side in a first direction. The first terminal is provided with a first heat dissipation part protruding from the first main surface. The first terminal is provided with a first opening part that opens from the first main surface. The first opening part is connected to the first heat dissipation part.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor module including a semiconductor device and a cooler. The cooler includes a housing having a hollow region and a heat sink. The housing has an opening that leads to the hollow region. The heat sink is attached to the housing so as to cover the opening. A portion of the heat sink is housed in the hollow region. The semiconductor device is joined to a portion of the heat sink that protrudes from the hollow region. When a coolant (such as cooling water) is flowed through the hollow region, the coolant comes into contact with the heat sink. This allows the semiconductor device to be efficiently cooled via the heat sink.

[0003] However, in the configuration of the semiconductor module disclosed in Patent Document 1, the cooling effect of the semiconductor device is not sufficient relative to the scale of the cooler.

[0004] International Publication No. 2017 / 094370

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can further improve cooling efficiency.

[0006] A semiconductor device according to a first aspect of the present disclosure includes a first terminal and a first semiconductor element conductively connected to the first terminal, the first terminal having a first main surface facing one side in a first direction, and a first heat dissipation portion protruding from the first main surface.

[0007] A vehicle provided by a second aspect of the present disclosure includes a drive source and a semiconductor device. The semiconductor device is electrically connected to the drive source. The semiconductor device further includes a second terminal, which is different from the semiconductor device provided by the first aspect of the present disclosure. A flow path is provided between the second terminal and a first terminal of the semiconductor device in a first direction. A first heat dissipation portion of the first terminal is accommodated in the flow path.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , showing the housing through the plan view. FIG. 3 is a plan view corresponding to FIG. 2, omitting the illustration of a fourth terminal. FIG. 4 is a plan view corresponding to FIG. 3, omitting the illustration of a second terminal, a conductive member, a third signal terminal, a fourth signal terminal, a plurality of second semiconductor elements, a plurality of third leads, and a plurality of fourth leads. FIG. 5 is a plan view corresponding to FIG. 4, omitting the illustration of a first terminal. FIG. 6 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a partial enlarged view of FIG. 8, showing one of a plurality of first semiconductor elements and its vicinity. FIG. 11 is a partial enlarged view of FIG. 8, showing one of a plurality of second semiconductor elements and its vicinity. FIG. 12 is a partially enlarged view of FIG. 7 . FIG. 13 is a cross-sectional view showing a state in which a refrigerant flows downward in the semiconductor device shown in FIG. 1 . FIG. 14 is a partially enlarged cross-sectional view of a semiconductor device according to a first modified example of the first embodiment of the present disclosure. FIG. 15 is a partially enlarged cross-sectional view of a semiconductor device according to a second modified example of the first embodiment of the present disclosure. FIG. 16 is a schematic diagram of a vehicle equipped with the semiconductor device shown in FIG. 1 . FIG. 17 is a plan view of a semiconductor device according to a second embodiment of the present disclosure and corresponds to FIG. 4 . FIG. 18 is a cross-sectional view of the semiconductor device shown in FIG. 17 and corresponds to FIG. 7 . FIG. 19 is a cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure and corresponds to FIG. 7 . FIG. 20 is a cross-sectional view of the semiconductor device shown in FIG. 19 and corresponds to FIG. 8 . FIG. 21 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 22 is a plan view of the semiconductor device shown in FIG. 21 and corresponds to FIG. 2 . FIG. 23 is a plan view of the semiconductor device shown in FIG. 21 and corresponds to FIG. 4 . FIG. 24 is a plan view of the semiconductor device shown in FIG. 21 and corresponds to FIG. 5 . Fig. 25 is a cross-sectional view taken along line XXV-XXV in Fig. 22. Fig. 26 is a cross-sectional view taken along line XXVI-XXVI in Fig. 22.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 13. The semiconductor device A10 is typically used in power conversion circuits such as inverters. The semiconductor device A10 includes a first terminal 11, a second terminal 12, a third terminal 13, a fourth terminal 14, a conductive member 15, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, and a housing 50. The semiconductor device A10 further includes a first signal terminal 16, a second signal terminal 17, a third signal terminal 18, a fourth signal terminal 19, a plurality of first leads 61, a plurality of second leads 62, a plurality of third leads 63, and a plurality of fourth leads 64. For ease of understanding, FIGS. 2 to 5 show the housing 50 in a see-through manner. In FIGS. 2 to 5, the see-through housing 50 is indicated by an imaginary line (two-dot chain line). For ease of understanding, the fourth terminal 14 is omitted from FIG. 3, as compared to FIG. 2. For ease of understanding, Fig. 4 omits the second terminal 12, the conductive member 15, the third signal terminal 18, the fourth signal terminal 19, the plurality of second semiconductor elements 22, the plurality of third leads 63, and the plurality of fourth leads 64 from Fig. 3. For ease of understanding, Fig. 5 omits the first terminal 11 from Fig. 4.

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to the first main surface 111A (details of which will be described later) of the first terminal 11 will be referred to as the "first direction z." Furthermore, the direction perpendicular to the first direction z will be referred to as the "second direction x." Furthermore, the direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0013] The semiconductor device A10 includes a half-bridge circuit including a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The semiconductor device A10 converts DC power supplied to a third terminal 13 and a fourth terminal 14 into AC power using the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. The third terminal 13 is a P terminal (positive electrode). The fourth terminal 14 is an N terminal (negative electrode). The converted AC power is input from the first terminal 11 and the second terminal 12 to a power supply target such as a motor.

[0014] 7 to 9 , the housing 50 supports each of the first terminal 11, the second terminal 12, the third terminal 13, the fourth terminal 14, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, and the fourth signal terminal 19. The housing 50 is made of an insulator containing resin. Alternatively, the housing 50 may be made of a conductor containing a metal such as aluminum (Al).

[0015] 1 and 6 , the housing 50 has a top surface 51, a bottom surface 52, a first side surface 531, a second side surface 532, a third side surface 533, and a fourth side surface 534. The top surface 51 faces one side in the first direction z. The bottom surface 52 faces the opposite side from the top surface 51 in the first direction z. The first side surface 531 and the second side surface 532 face opposite sides to each other in the second direction x. The third side surface 533 and the fourth side surface 534 face opposite sides to each other in the third direction y.

[0016] As shown in Figures 7 to 9, the housing 50 has a hollow portion 54. Atmospheric air flows into the hollow portion 54. Alternatively, as shown in Figure 13, the hollow portion 54 may be constantly filled with the refrigerant 70. The hollow portion 54 includes a flow path 541. The flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. Here, the refrigerant 70 shown in Figure 13 must be an insulator. In the present disclosure, the composition of the refrigerant 70 is not limited as long as the refrigerant 70 is an insulator.

[0017] As shown in FIGS. 1 , 3 , 4 , and 6 , the housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 opens on the third side surface 533 and communicates with the hollow portion 54. The outlet 56 opens on the fourth side surface 534 and communicates with the hollow portion 54. In the housing 50, a coolant 70 shown in FIG. 13 flows from the inlet 55 into the hollow portion 54. The coolant 70 that has flowed into the hollow portion 54 is discharged from the outlet 56. As shown in FIGS. 3 and 4 , the inlet 55 and the outlet 56 are located on opposite sides of each other in the second direction x with respect to the plurality of first heat dissipation portions 113 (described in detail later) of the first terminal 11.

[0018] As shown in FIGS. 7 to 9 , the first terminal 11 is located on one side of the multiple first semiconductor elements 21 in the first direction z. The first terminal 11 is a metal plate containing, for example, copper (Cu). As shown in FIGS. 4 and 7 , the first terminal 11 has a first base portion 111, a first extension portion 112, and multiple first connection portions 115. The first base portion 111 is housed in the hollow portion 54 of the housing 50 and is in contact with the flow path 541. The first extension portion 112 is conductively joined to one side of the first base portion 111 in the second direction x. The first extension portion 112 is supported by the housing 50. A portion of the first extension portion 112 protrudes outward from the second side surface 532 of the housing 50. The multiple first connection portions 115 are connected to the first base portion 111. Each of the multiple first connection portions 115 protrudes from the first base portion 111 on the side where the multiple first semiconductor elements 21 are located in the first direction z. The multiple first connection portions 115 are arranged along the second direction x.

[0019] As shown in FIGS. 4 and 7 , the first base portion 111 of the first terminal 11 is provided with a plurality of first heat dissipation portions 113 and a plurality of first openings 114. The first base portion 111 has a first main surface 111A that faces the same side as the top surface 51 of the housing 50 in the first direction z. The plurality of first heat dissipation portions 113 protrude from the first main surface 111A. Each of the plurality of first heat dissipation portions 113 is spaced apart from the plurality of first connection portions 115. The plurality of first heat dissipation portions 113 are housed in flow paths 541 in the hollow portion 54 of the housing 50. The plurality of first openings 114 open from the first main surface 111A. The plurality of first openings 114 penetrate the first base portion 111 in the first direction z. The plurality of first openings 114 are individually connected to the plurality of first heat dissipation portions 113.

[0020] 12 , each of the multiple first heat dissipation portions 113 extends in the first direction z. The volume of each of the multiple first heat dissipation portions 113 is equal to the volume of each of the multiple first openings 114. The thickness (dimension in the second direction x) of each of the multiple first heat dissipation portions 113 is equal to the dimension of the first base portion 111 in the first direction z.

[0021] As shown in FIGS. 7 to 9 , the second terminal 12 is located on the opposite side of the first semiconductor elements 21 from the first main surface 111A of the first terminal 11 in the first direction z. The second terminal 12 is a metal plate containing, for example, copper. The second terminal 12 has a second base 121 and a second extension 122. The second base 121 is housed in the hollow portion 54 of the housing 50 and is in contact with the flow path 541 and the third flow path 543. The second extension 122 is conductively joined to one side of the second base 121 in the second direction x. The second extension 122 is supported by the housing 50. A portion of the second extension 122 protrudes outward from the second side surface 532 of the housing 50.

[0022] As shown in FIGS. 3 and 7 , the second base portion 121 of the second terminal 12 is provided with a plurality of second heat dissipation portions 123 and a plurality of second openings 124. The second base portion 121 has a second main surface 121A that faces the first main surface 111A of the first terminal 11 in the first direction z. The plurality of second heat dissipation portions 123 protrude from the second main surface 121A. As viewed in the first direction z, each of the plurality of second heat dissipation portions 123 overlaps one of the plurality of first heat dissipation portions 113 of the first terminal 11. The plurality of second heat dissipation portions 123 are housed in a flow path 541 of the hollow portion 54 of the housing 50. The plurality of second openings 124 open from the second main surface 121A. The plurality of second openings 124 penetrate the second base portion 121 in the first direction z. The second openings 124 are connected to the second heat dissipation portions 123, respectively.

[0023] As shown in FIGS. 7 to 9 , the third terminals 13 are located on the opposite side of the first terminals 11 in the first direction z with the plurality of first semiconductor elements 21 as a reference. The third terminals 13 are, for example, metal plates containing copper. The third terminals 13 have a third base 131 and a third extension 132. The third base 131 is housed in the hollow portion 54 of the housing 50. The third extension 132 is conductively joined to one side of the third base 131 in the second direction x. The third extension 132 is supported by the housing 50. A portion of the third extension 132 protrudes outward from a first side surface 531 of the housing 50.

[0024] 5 and 7 , the third base portion 131 of the third terminal 13 is provided with a plurality of third heat dissipation portions 133 and a plurality of third openings 134. The third base portion 131 has a third main surface 131A that faces the side opposite to the side facing the plurality of first semiconductor elements 21 in the first direction z. The plurality of third heat dissipation portions 133 protrude from the third main surface 131A. The plurality of third openings 134 open from the third main surface 131A. The plurality of third openings 134 penetrate the third base portion 131 in the first direction z. The plurality of third openings 134 are individually connected to the plurality of third heat dissipation portions 133.

[0025] As shown in FIGS. 7 to 9 , the fourth terminal 14 is located on the opposite side of the second terminal 12 from the second terminals 12 in the first direction z, with the plurality of second semiconductor elements 22 as a reference. The fourth terminal 14 is a metal plate containing, for example, copper. The fourth terminal 14 has a fourth base 141, a fourth extension 142, and a plurality of second connection portions 145. The fourth base 141 is housed in the hollow portion 54 of the housing 50. The fourth extension 142 is conductively joined to one side of the fourth base 141 in the second direction x. The fourth extension 142 is supported by the housing 50. A portion of the fourth extension 142 protrudes outward from the first side surface 531 of the housing 50. The plurality of second connection portions 145 are connected to the fourth base 141. Each of the plurality of second connection portions 145 protrudes from the fourth base 141 on the side where the plurality of second semiconductor elements 22 are located in the first direction z. The plurality of second connection portions 145 are arranged along the second direction x.

[0026] As shown in FIGS. 2 and 7 , the fourth base portion 141 of the fourth terminal 14 is provided with a plurality of fourth heat dissipation portions 143 and a plurality of fourth openings 144. The fourth base portion 141 has a fourth main surface 141A that faces the same side as the top surface 51 of the housing 50 in the first direction z. The plurality of fourth heat dissipation portions 143 protrude from the fourth main surface 141A. Each of the plurality of fourth heat dissipation portions 143 is spaced apart from the plurality of second connection portions 145. The plurality of fourth openings 144 open from the fourth main surface 141A. The plurality of fourth openings 144 penetrate the fourth base portion 141 in the first direction z. The plurality of fourth openings 144 are individually connected to the plurality of fourth heat dissipation portions 143.

[0027] As shown in Figures 3, 4, and 7, the conductive member 15 connects the first base portion 111 of the first terminal 11 and the second base portion 121 of the second terminal 12 on one side in the second direction x. This allows the first terminal 11 and the second terminal 12 to be electrically connected to each other. The conductive member 15 is a metal plate containing copper, for example. The conductive member 15 is housed in the hollow portion 54 of the housing 50. In the semiconductor device A10, the first terminal 11, the second terminal 12, and the conductive member 15 are formed from a single member.

[0028] As shown in FIGS. 7 to 9 , the multiple first semiconductor elements 21 are located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z. Therefore, the multiple first semiconductor elements 21 are located on the opposite side of the multiple first heat dissipation portions 113 from the first main surface 111A of the first terminal 11. In addition, the multiple first semiconductor elements 21 are located between the multiple first connection portions 115 of the first terminal 11 and the third base portion 131 of the third terminal 13. The multiple first semiconductor elements 21 are housed in the hollow portion 54 of the housing 50. All of the multiple first semiconductor elements 21 are the same element. The multiple first semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, the plurality of first semiconductor elements 21 may be field-effect transistors including metal-insulator-semiconductor field-effect transistors (MISFETs) or bipolar transistors such as insulated gate bipolar transistors (IGBTs). In the description of the semiconductor device A10, the plurality of first semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The plurality of first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The plurality of first semiconductor elements 21 are arranged along the second direction x.

[0029] As shown in FIG. 10 , each of the plurality of first semiconductor elements 21 has a first electrode 211 , a second electrode 212 and a first gate electrode 213 .

[0030] As shown in FIG. 10 , the first electrode 211 is located on the opposite side of the third terminal 13 from the side facing the third base portion 131 in the first direction z. The first electrode 211 of each of the multiple first semiconductor elements 21 is individually conductively bonded to the multiple first connection portions 115 of the first terminal 11 via a bonding layer 29. This allows the first electrode 211 to be electrically connected to the first terminal 11 and the second terminal 12. The bonding layer 29 is solder. Alternatively, the bonding layer 29 may be a sintered metal containing silver (Ag) or the like. A current corresponding to the power converted by the first semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the source of the first semiconductor element 21.

[0031] 10 , the second electrode 212 faces the third base portion 131 of the third terminal 13. The second electrode 212 is conductively bonded to the third base portion 131 via a bonding layer 29. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain of the first semiconductor element 21.

[0032] 10 , the first gate electrode 213 is located on the same side as the first electrode 211 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 3 , the area of ​​the first gate electrode 213 is smaller than the area of ​​the first electrode 211 when viewed in the first direction z.

[0033] As shown in FIGS. 7 to 9 , the second semiconductor elements 22 are located on the opposite side of the first terminal 11 from the second terminal 12 in the first direction z. Therefore, the second semiconductor elements 22 are located on the opposite side of the second heat dissipation portions 123 from the second main surface 121A of the second terminal 12. The second semiconductor elements 22 are also located between the second base portion 121 of the second terminal 12 and the second connection portions 145 of the fourth terminal 14 in the first direction z. The second semiconductor elements 22 are housed in the hollow portion 54 of the housing 50. As viewed in the first direction z, the second semiconductor elements 22 individually overlap the first semiconductor elements 21. The second semiconductor elements 22 are identical to the first semiconductor elements 21. Therefore, the second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The second semiconductor elements 22 are arranged along the second direction x.

[0034] As shown in FIG. 11 , each of the plurality of second semiconductor elements 22 has a third electrode 221 , a fourth electrode 222 and a second gate electrode 223 .

[0035] 11 , the third electrode 221 is located on the opposite side of the second terminal 12 from the side facing the second base portion 121 in the first direction z. The third electrode 221 of each of the multiple second semiconductor elements 22 is individually conductively bonded to the multiple second connection portions 145 of the fourth terminal 14 via the bonding layer 29. This allows the third electrode 221 to be electrically connected to the fourth terminal 14. A current corresponding to the power converted by the second semiconductor element 22 flows through the third electrode 221. In other words, the third electrode 221 corresponds to the source of the second semiconductor element 22.

[0036] 11 , the fourth electrode 222 faces the second base portion 121 of the second terminal 12. The fourth electrode 222 is conductively bonded to the second base portion 121 via a bonding layer 29. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the fourth electrode 222. In other words, the fourth electrode 222 corresponds to the drain of the second semiconductor element 22.

[0037] 11 , the second gate electrode 223 is located on the same side as the third electrode 221 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. When viewed in the first direction z, the area of ​​the second gate electrode 223 is smaller than the area of ​​the third electrode 221.

[0038] As shown in FIGS. 4 and 5 , the first signal terminal 16 is located on one side of the first terminal 11 and the third terminal 13 in the third direction y. The first signal terminal 16 is supported by the housing 50. The first signal terminal 16 is electrically connected to the first gate electrode 213 of each of the first semiconductor elements 21. A gate voltage for driving the first semiconductor elements 21 is applied to the first signal terminal 16. The first signal terminal 16 is a metal lead containing, for example, copper. The first signal terminal 16 has an inner portion 161 and an outer portion 162. The inner portion 161 is housed in the housing 50. A portion of the inner portion 161 is housed in the hollow portion 54 of the housing 50. The inner portion 161 includes a portion extending in the second direction x. The outer portion 162 is connected to the inner portion 161. As shown in FIG. 8 , the outer portion 162 protrudes outward from a third side surface 533 of the housing 50.

[0039] Each of the multiple first leads 61 is electrically connected to one of the first gate electrodes 213 of each of the multiple first semiconductor elements 21 and the first signal terminal 16. As shown in FIG. 5 , each of the multiple first leads 61 extends in the third direction y. The multiple first leads 61 are metal leads containing, for example, copper. One side of each of the multiple first leads 61 in the third direction y is conductively joined to the first gate electrode 213 of one of the multiple first semiconductor elements 21 via a bonding layer 29. The other side of each of the multiple first leads 61 in the third direction y is conductively joined to the inner portion 161 of the first signal terminal 16.

[0040] As shown in FIGS. 4 and 5 , the second signal terminal 17 is located on the same side as the first signal terminal 16 in the third direction y with respect to the first terminal 11 and the third terminal 13. The second signal terminal 17 is supported by the housing 50. The second signal terminal 17 is electrically connected to the first electrodes 211 of the plurality of first semiconductor elements 21. A voltage having the same potential as the voltage applied to the first electrodes 211 of the plurality of first semiconductor elements 21 is applied to the second signal terminal 17. The second signal terminal 17 is a metal lead containing, for example, copper. The second signal terminal 17 has an inner portion 171 and an outer portion 172. The inner portion 171 is housed in the housing 50. Furthermore, a portion of the inner portion 171 is housed in the hollow portion 54 of the housing 50. The inner portion 171 includes a portion extending in the second direction x. 8 and 9 , the inner part 171 is located closer to the top surface 51 of the housing 50 than the inner part 161 of the first signal terminal 16. The outer part 172 is connected to the inner part 171. As shown in FIG. 9 , the outer part 172 protrudes outward from the third side surface 533 of the housing 50.

[0041] Each of the multiple second leads 62 is electrically connected to one of the first electrodes 211 of each of the multiple first semiconductor elements 21 and the second signal terminal 17. As shown in FIG. 5 , when viewed in the first direction z, each of the multiple second leads 62 extends in the third direction y. As shown in FIG. 9 , each of the multiple second leads 62 straddles the inner portion 161 of the first signal terminal 16. The multiple second leads 62 are metal leads containing, for example, copper. One side of each of the multiple second leads 62 in the third direction y is conductively joined to the first electrode 211 of one of the multiple first semiconductor elements 21. The other side of each of the multiple second leads 62 in the third direction y is conductively joined to the inner portion 171 of the second signal terminal 17.

[0042] As shown in FIGS. 2 and 3 , the third signal terminal 18 is located on one side of the second terminal 12 and the fourth terminal 14 in the third direction y. When viewed in the first direction z, the third signal terminal 18 overlaps the first signal terminal 16. The third signal terminal 18 is supported by the housing 50. The third signal terminal 18 is electrically connected to the second gate electrodes 223 of the second semiconductor elements 22. A gate voltage for driving the second semiconductor elements 22 is applied to the third signal terminal 18. The third signal terminal 18 is a metal lead containing, for example, copper. The third signal terminal 18 has an inner portion 181 and an outer portion 182. The inner portion 181 is housed in the housing 50. A portion of the inner portion 181 is housed in the hollow portion 54 of the housing 50. The inner portion 181 includes a portion extending in the second direction x. The outer portion 182 is connected to the inner portion 181. As shown in FIG. 8 , the outer part 182 protrudes outward from the third side surface 533 of the housing 50 .

[0043] Each of the multiple third leads 63 is electrically connected to one of the second gate electrodes 223 of each of the multiple second semiconductor elements 22 and the third signal terminal 18. As shown in FIG. 3 , each of the multiple third leads 63 extends in the third direction y. The multiple third leads 63 are metal leads containing, for example, copper. One side of each of the multiple third leads 63 in the third direction y is conductively joined to the second gate electrodes 223 of one of the multiple second semiconductor elements 22 via a bonding layer 29. The other side of each of the multiple third leads 63 in the third direction y is conductively joined to the inner portion 181 of the third signal terminal 18.

[0044] As shown in FIGS. 2 and 3 , the fourth signal terminal 19 is located on the same side as the third signal terminal 18 in the third direction y with respect to the second terminal 12 and the fourth terminal 14. When viewed in the first direction z, the fourth signal terminal 19 overlaps the second signal terminal 17. The fourth signal terminal 19 is supported by the housing 50. The fourth signal terminal 19 is electrically connected to the third electrodes 221 of the second semiconductor elements 22. A voltage having the same potential as the voltage applied to the third electrodes 221 of the second semiconductor elements 22 is applied to the fourth signal terminal 19. The fourth signal terminal 19 is a metal lead containing, for example, copper. The fourth signal terminal 19 has an inner portion 191 and an outer portion 192. The inner portion 191 is housed in the housing 50. A portion of the inner portion 191 is housed in the hollow portion 54 of the housing 50. The inner portion 191 includes a portion extending in the second direction x. 8 and 9 , the inner part 191 is located closer to the top surface 51 of the housing 50 than the inner part 181 of the third signal terminal 18. The outer part 192 is connected to the inner part 191. As shown in FIG. 9 , the outer part 192 protrudes outward from the third side surface 533 of the housing 50.

[0045] Each of the multiple fourth leads 64 is electrically connected to one of the third electrodes 221 of each of the multiple second semiconductor elements 22 and the fourth signal terminal 19. As shown in FIG. 3 , when viewed in the first direction z, each of the multiple fourth leads 64 extends in the third direction y. As shown in FIG. 9 , each of the multiple fourth leads 64 straddles the inner portion 181 of the third signal terminal 18. The multiple fourth leads 64 are metal leads containing, for example, copper. One side of each of the multiple fourth leads 64 in the third direction y is conductively joined to the third electrode 221 of one of the multiple second semiconductor elements 22. The other side of each of the multiple fourth leads 64 in the third direction y is conductively joined to the inner portion 191 of the fourth signal terminal 19.

[0046] Next, a semiconductor device A11 according to a first modification of the first embodiment of the present disclosure will be described with reference to Fig. 14. Fig. 14 corresponds to Fig. 12 .

[0047] 14, the semiconductor device A11 differs from the semiconductor device A10 in the configuration of the first terminal 11. The first heat dissipation portions 113 of the first terminal 11 are curved in the second direction x.

[0048] Next, a semiconductor device A12 according to a second modification of the first embodiment of the present disclosure will be described with reference to Fig. 15. Fig. 15 corresponds to Fig. 12 .

[0049] 15 , the semiconductor device A12 differs from the semiconductor device A10 in the configuration of the first terminal 11. Each of the multiple first openings 114 of the first terminal 11 is recessed from the first main surface 111A of the first base portion 111. The volume of each of the multiple first heat dissipation portions 113 of the first terminal 11 is smaller than the volume of the multiple first heat dissipation portions 113 of the first terminal 11 of the semiconductor device A10.

[0050] Next, a vehicle B equipped with the semiconductor device A10 will be described with reference to Fig. 16. The vehicle B is, for example, an electric vehicle (EV).

[0051] As shown in Fig. 16, vehicle B includes an on-board charger 81, a storage battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 81 via a wired connection. The on-board charger 81 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 81 is stepped up by the converter and then supplied to the storage battery 82. The stepped-up voltage is, for example, 600 V.

[0052] The drive system 83 drives the vehicle B. The drive system 83 includes an inverter 831 and a drive source 832. The semiconductor device A50 constitutes part of the inverter 831. Power stored in the storage battery 82 is supplied to the inverter 831. The power supplied from the storage battery 82 to the inverter 831 is DC power. Alternatively, unlike the power system shown in FIG. 16 , a step-up DC-DC converter may be further provided between the storage battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831 including the semiconductor device A50 is connected to the drive source 832. The drive source 832 includes an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and rotates the drive shaft of the vehicle B. This drives vehicle B. To drive vehicle B, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. Therefore, semiconductor device A50 in inverter 831 is necessary to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0053] Next, the effects of the semiconductor device A10 will be described.

[0054] The semiconductor device A10 includes a first terminal 11 and a first semiconductor element 21. The first semiconductor element 21 is conductively bonded to the first terminal 11. The first terminal 11 has a first main surface 111A facing one side in the first direction z. The first terminal 11 is provided with a first heat dissipation portion 113 protruding from the first main surface 111A. With this configuration, as shown in FIG. 13 , when a refrigerant 70 flows into the hollow portion 54 of the housing 50, the refrigerant 70 comes into direct contact with the first heat dissipation portion 113, thereby improving the cooling efficiency of the semiconductor device A10 compared to conventional devices. Therefore, with this configuration, the cooling efficiency of the semiconductor device A10 can be further improved.

[0055] The first terminal 11 has a first opening 114 that opens from the first main surface 111A. The first opening 114 is connected to the first heat dissipation portion 113. With this configuration, the first heat dissipation portion 113 can be formed by bending a part of the first base portion 111 of the first terminal 11.

[0056] The first opening 114 penetrates the first base portion 111 of the first terminal 11 in the first direction z. By adopting this configuration, the surface area of ​​the first terminal 11 is increased and the coolant 70 flows down into the first opening 114. This more effectively improves the cooling efficiency of the semiconductor device A10.

[0057] The semiconductor device A10 further includes a second terminal 12 located on the opposite side of the first semiconductor element 21 with respect to the first main surface 111A of the first terminal 11. A flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first main surface 111A and the second main surface 121A of the second terminal 12 are in contact with the flow path 541. With this configuration, the coolant 70 comes into direct contact with the second terminal 12 in addition to the first terminal 11, thereby further improving the cooling efficiency of the semiconductor device A10.

[0058] The second semiconductor element 22 is conductively joined to the second terminal 12. The second terminal 12 is provided with a second heat dissipation portion 123 that protrudes from the second main surface 121A. The second heat dissipation portion 123 is housed in the flow path 541. With this configuration, the coolant 70 comes into direct contact with the second heat dissipation portion 123, thereby further improving the cooling efficiency of the semiconductor device A10.

[0059] The semiconductor device A10 further includes a housing 50 that supports the first terminal 11 and the second terminal 12. The housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 and the outlet 56 are located on opposite sides of the first heat dissipation portion 113 of the first terminal 11 in a direction perpendicular to the first direction z. This configuration allows the refrigerant 70 to flow downward so that the refrigerant 70 can easily come into direct contact with the first heat dissipation portion 113.

[0060] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 17 and 18. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 17 corresponds to Figure 4, which shows the semiconductor device A10. Figure 18 corresponds to Figure 7, which shows the semiconductor device A10.

[0061] In the semiconductor device A20, the configuration of the second terminal 12 is different from that of the semiconductor device A10.

[0062] As shown in FIGS. 17 and 18 , when viewed in the first direction z, each of the second heat dissipation portions 123 of the second terminal 12 is spaced apart from each of the first heat dissipation portions 113 of the first terminal 11 .

[0063] Next, the effects of the semiconductor device A20 will be described.

[0064] The semiconductor device A20 includes a first terminal 11 and a first semiconductor element 21. The first semiconductor element 21 is conductively bonded to the first terminal 11. The first terminal 11 has a first main surface 111A facing one side in the first direction z. The first terminal 11 is provided with a first heat dissipation portion 113 protruding from the first main surface 111A. Therefore, with this configuration, the cooling efficiency of the semiconductor device A20 can also be further improved. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0065] In the semiconductor device A20, when viewed in the first direction z, the second heat dissipation portion 123 of the second terminal 12 is spaced apart from the first heat dissipation portion 113 of the first terminal 11. This configuration reduces the concentration of heat distribution in each of the first terminal 11 and the second terminal 12 due to heat generation from the first semiconductor element 21 and the second semiconductor element 22.

[0066] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 19 and 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 19 corresponds to Figure 7, which shows the semiconductor device A10. Figure 20 corresponds to Figure 8, which shows the semiconductor device A10.

[0067] In the semiconductor device A30, the configuration of the conductive member 15 is different from that of the semiconductor device A10.

[0068] 19 and 20 , the conductive member 15 is provided with a through-hole 151. The through-hole 151 penetrates the conductive member 15 in the second direction x. The through-hole 151 is connected to a flow path 541 in the hollow portion 54 of the housing 50.

[0069] Next, the effects of the semiconductor device A30 will be described.

[0070] The semiconductor device A30 includes a first terminal 11 and a first semiconductor element 21. The first semiconductor element 21 is conductively bonded to the first terminal 11. The first terminal 11 has a first main surface 111A facing one side in the first direction z. The first terminal 11 is provided with a first heat dissipation portion 113 protruding from the first main surface 111A. Therefore, with this configuration, the cooling efficiency of the semiconductor device A30 can be further improved. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0071] In the semiconductor device A30, the conductive member 15 is provided with a through-hole 151 that penetrates in a direction perpendicular to the first direction z. The through-hole 151 is connected to a flow path 541 in the hollow portion 54 of the housing 50. With this configuration, the surface area of ​​the conductive member 15 is increased while the coolant 70 flows down through the through-hole 151, thereby more effectively improving the cooling efficiency of the semiconductor device A30.

[0072] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to FIGS. 21 to 26. In these figures, elements that are the same as or similar to those of the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, FIG. 22 corresponds to FIG. 2, which shows the semiconductor device A10. FIG. 23 corresponds to FIG. 4, which shows the semiconductor device A10. FIG. 24 corresponds to FIG. 5, which shows the semiconductor device A10.

[0073] In semiconductor device A40, the configurations of the first terminal 11, the second terminal 12, the third terminal 13, the fourth terminal 14, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, the fourth signal terminal 19, the housing 50, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22 are different from those of semiconductor device A10.

[0074] As shown in Fig. 23 , the first terminal 11 does not have a first extension portion 112. As shown in Figs. 22 and 26 , the second extension portion 122 of the second terminal 12 is located on one side of the second base portion 121 in the third direction y. The second extension portion 122 is conductively joined to the second base portion 121 via a pillow portion 122A. As shown in Figs. 21 and 26 , a portion of the second extension portion 122 protrudes outward from the third side surface 533 of the housing 50.

[0075] 22 , 24 , and 25 , the third extension portion 132 of the third terminal 13 and the fourth extension portion 142 of the fourth terminal 14 are located on the opposite side of the second extension portion 122 of the second terminal 12 in the third direction y with respect to the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. As shown in FIGS. 21 , 25 , and 26 , a portion of each of the third extension portion 132 and the fourth extension portion 142 protrudes outward from the fourth side surface 534 of the housing 50. The third extension portion 132 and the fourth extension portion 142 are spaced apart from each other in the second direction x.

[0076] 21 and 23, the outer portion 162 of the first signal terminal 16 and the outer portion 172 of the second signal terminal 17 protrude outward from the first side surface 531 of the housing 50. As shown in Figures 21 and 22, the outer portion 182 of the third signal terminal 18 and the outer portion 192 of the fourth signal terminal 19 protrude outward from the first side surface 531. The outer portions 162, 172, 182, and 192 extend in the second direction x.

[0077] 21 , the inlet 55 of the housing 50 opens at the second side surface 532 of the housing 50. The outlet 56 of the housing 50 opens at the first side surface 531.

[0078] As shown in FIGS. 23 to 26 , the multiple first semiconductor elements 21 include multiple first switching elements 21A and multiple first diodes 21B. The multiple first diodes 21B are individually connected in parallel to the multiple first switching elements 21A. Each of the multiple first switching elements 21A has a first electrode 211, a second electrode 212, and a first gate electrode 213. The multiple first switching elements 21A are transistors such as MOSFETs and IGBTs. In the semiconductor device A40, the multiple first switching elements 21A are, for example, MOSFETs. The multiple first diodes 21B have a first electrode 211 that is an anode and a second electrode 212 that is a cathode. In the semiconductor device A40, the multiple first diodes 21B function as freewheeling diodes for the multiple first switching elements 21A. In the semiconductor device A40, the multiple first diodes 21B are, for example, Schottky barrier diodes.

[0079] As shown in FIGS. 22 , 25 , and 26 , the second semiconductor elements 22 include a plurality of second switching elements 22A and a plurality of second diodes 22B. The second diodes 22B are individually connected in parallel to the second switching elements 22A. Each of the second switching elements 22A has a third electrode 221, a fourth electrode 222, and a second gate electrode 223. The second switching elements 22A are the same elements as the first switching elements 21A. The second diodes 22B have the third electrode 221, which is an anode, and the fourth electrode 222, which is a cathode. In the semiconductor device A40, the second diodes 22B function as freewheeling diodes for the second switching elements 22A. The second diodes 22B are the same elements as the first diodes 21B.

[0080] Therefore, like the semiconductor device A40, the multiple first semiconductor elements 21 may be configured to include multiple types of elements rather than all being the same elements. Similarly, the multiple second semiconductor elements 22 may be configured to include multiple types of elements rather than all being the same elements.

[0081] Next, the effects of the semiconductor device A40 will be described.

[0082] The semiconductor device A40 includes a first terminal 11 and a first semiconductor element 21. The first semiconductor element 21 is conductively bonded to the first terminal 11. The first terminal 11 has a first main surface 111A facing one side in the first direction z. The first terminal 11 is provided with a first heat dissipation portion 113 protruding from the first main surface 111A. Therefore, with this configuration, the cooling efficiency of the semiconductor device A40 can also be further improved. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0083] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0084] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first terminal; and a first semiconductor element conductively bonded to the first terminal, wherein the first terminal has a first main surface facing one side in a first direction, and wherein the first terminal is provided with a first heat dissipation portion protruding from the first main surface. Supplementary note 2. The semiconductor device according to supplementary note 1, wherein the first terminal is provided with a first opening that opens from the first main surface, and the first opening is connected to the first heat dissipation portion. Supplementary note 3. The semiconductor device according to supplementary note 2, wherein the first semiconductor element is located on the opposite side of the first main surface to the first heat dissipation portion. Supplementary note 4. The semiconductor device according to supplementary note 3, wherein the first terminal has a first base portion including the first main surface and a first connection portion connected to the first base portion, wherein the first connection portion protrudes from the first base portion on a side where the first semiconductor element is located in the first direction, and the first semiconductor element is conductively bonded to the first connection portion. Appendix 5. The semiconductor device according to Appendix 4, wherein the first heat dissipation portion is spaced apart from the first connection portion. Appendix 6. The semiconductor device according to Appendix 5, wherein the first opening penetrates the first base portion in the first direction. Appendix 7. The semiconductor device according to Appendix 6, wherein a volume of the first heat dissipation portion is equal to a volume of the first opening. Appendix 8. The semiconductor device according to Appendix 6, wherein the first heat dissipation portion extends in the first direction. Appendix 9. The semiconductor device according to Appendix 6, wherein the first heat dissipation portion is curved in a direction perpendicular to the first direction. Appendix 10. The semiconductor device according to any of Appendixes 4 to 9, further comprising a second terminal located on the opposite side of the first main surface to the first semiconductor element, wherein a flow path is provided between the first terminal and the second terminal in the first direction, and wherein the first heat dissipation portion is accommodated in the flow path. Appendix 11. The semiconductor device according to claim 10, wherein the second terminal has a second main surface facing the first main surface, the second terminal is provided with a second heat dissipation portion protruding from the second main surface and a second opening opening from the second main surface, the second heat dissipation portion is accommodated in the flow path, and the second opening is connected to the second heat dissipation portion.Appendix 12. The semiconductor device according to Appendix 11, wherein the first main surface and the second main surface are in contact with the flow path. Appendix 13. The semiconductor device according to Appendix 12, wherein the first heat dissipation portion is spaced apart from the second terminal, and the second heat dissipation portion is spaced apart from the first terminal. Appendix 14. The semiconductor device according to Appendix 13, wherein the second heat dissipation portion overlaps the first connection portion when viewed in the first direction. Appendix 15. The semiconductor device according to Appendix 14, wherein the second heat dissipation portion is spaced apart from the first heat dissipation portion when viewed in the first direction. Appendix 16. The semiconductor device according to Appendix 13, further comprising a third terminal located on the opposite side of the first terminal from the first terminal with respect to the first semiconductor element, and the first semiconductor element is conductively joined to the third terminal. Appendix 17. The semiconductor device according to Appendix 16, further comprising a housing, wherein the first terminal, the second terminal, and the third terminal are supported by the housing, and the housing has a hollow portion including the flow path. Appendix 18. The semiconductor device according to Appendix 17, wherein the third terminal has a third main surface facing the opposite side to the side facing the first semiconductor element in the first direction, the third terminal is provided with a third heat dissipation portion protruding from the third main surface and a third opening opening from the third main surface, the third heat dissipation portion is housed in the hollow portion, and the third opening is connected to the third heat dissipation portion. Appendix 19. The semiconductor device according to Appendix 17, further comprising a conductive member connecting the first terminal and the second terminal, the conductive member being housed in the hollow portion. Appendix 20. A vehicle comprising: a drive source; and the semiconductor device according to Appendix 10, wherein the semiconductor device is electrically connected to the drive source. Appendix 21. The semiconductor device according to Appendix 3, wherein a thickness of the first heat dissipation portion is equal to or less than a dimension of the first base in the first direction. Appendix 22. The semiconductor device according to claim 16, further comprising a second semiconductor element located on the opposite side of the first terminal with respect to the second terminal, the second terminal being electrically connected to the first terminal, and the second semiconductor element being conductively joined to the second terminal. 23. The semiconductor device according to claim 22, wherein the second semiconductor element overlaps the first semiconductor element when viewed in the first direction.Appendix 24. The semiconductor device according to Appendix 22, further comprising a fourth terminal located on the opposite side of the second terminal with respect to the second semiconductor element, wherein the second semiconductor element is conductively bonded to the fourth terminal. Appendix 25. The semiconductor device according to Appendix 24, further comprising: a second base portion and a second connection portion connected to the second base portion; the second connection portion protruding from the second base portion on a side on which the second semiconductor element is located in the first direction; and the second semiconductor element is conductively bonded to the second connection portion. Appendix 26. The semiconductor device according to Appendix 16, further comprising: a first signal terminal; the first semiconductor element has a first electrode and a second electrode located on opposite sides of each other in the first direction, and a first gate electrode located on the same side as the first electrode in the first direction, the first electrode being conductively bonded to the first connection portion; the second electrode being conductively bonded to the third terminal; and the first gate electrode being electrically connected to the first signal terminal. Appendix 27. The semiconductor device according to claim 17, wherein the housing has an inlet and an outlet that each communicate with the hollow portion, and the inlet and the outlet are located on opposite sides of the first heat dissipation member in a direction perpendicular to the first direction. 28. The semiconductor device according to claim 19, wherein the first terminal, the second terminal, and the conductive member are formed from a single member.

[0085] A10 to A40: semiconductor device B: vehicle 11: first terminal 111: first base 111A: first main surface 112: first extension 113: first heat dissipation portion 114: first opening 115: first connection portion 12: second terminal 121: second base 121A: second main surface 122: second extension 122A: pillow portion 123: second heat dissipation portion 124: second opening 13: third terminal 131: third base 131A: third main surface 132: third extension 133: third heat dissipation portion 134: third opening 14: fourth terminal 141: fourth base 141A: fourth main surface 142: fourth extension 143: fourth heat dissipation portion 144: fourth opening 15: Conductive member 151: Through portion 16: First signal terminal 161: Inner portion 162: Outer portion 17: Second signal terminal 171: Inner portion 172: Outer portion 18: Third signal terminal 181: Inner portion 182: Outer portion 19: Fourth signal terminal 191: Inner portion 192: Outer portion 21: First semiconductor element 21A: First switching element 21B: First diode 211: First electrode 212: Second electrode 213: First gate electrode 22: Second semiconductor element 22A: Second switching element 22B: Second diode 221: Third electrode 222: Fourth electrode 223: Second gate electrode 29: Bonding layer 50: Housing 51: Top surface 52: Bottom surface 531 to 534: First to fourth side surfaces 54: Hollow portion 541: Flow path 55: Inlet 56: Outlet 61 to 64: First to fourth leads 70: Refrigerant 81: On-board charger 82: Storage battery 83: Drive system 831: Inverter 832: Drive source z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a first terminal; and a first semiconductor element conductively joined to the first terminal, the first terminal having a first main surface facing one side in a first direction, and the first terminal being provided with a first heat dissipation portion protruding from the first main surface.

2. The semiconductor device according to claim 1, wherein the first terminal is provided with a first opening that opens from the first main surface, and the first opening is connected to the first heat dissipation portion.

3. The semiconductor device according to claim 2, wherein the first semiconductor element is located on the opposite side of the first main surface from the first heat dissipation portion.

4. The semiconductor device described in claim 3, wherein the first terminal has a first base portion including the first main surface and a first connection portion connected to the first base portion, the first connection portion protruding from the first base portion on a side where the first semiconductor element is located in the first direction, and the first semiconductor element is conductively joined to the first connection portion.

5. The semiconductor device according to claim 4, wherein said first heat dissipation portion is spaced apart from said first connection portion.

6. The semiconductor device according to claim 5, wherein said first opening penetrates said first base in said first direction.

7. The semiconductor device according to claim 6, wherein a volume of said first heat dissipation portion is equal to a volume of said first opening portion.

8. The semiconductor device according to claim 6, wherein said first heat dissipation portion extends in said first direction.

9. The semiconductor device according to claim 6, wherein said first heat dissipation portion is curved in a direction perpendicular to said first direction.

10. A semiconductor device as described in any one of claims 4 to 9, further comprising a second terminal located on the opposite side of the first semiconductor element with respect to the first main surface, a flow path being provided between the first terminal and the second terminal in the first direction, and the first heat dissipation portion being accommodated in the flow path.

11. The semiconductor device described in claim 10, wherein the second terminal has a second main surface opposite to the first main surface, the second terminal is provided with a second heat dissipation portion protruding from the second main surface and a second opening opening from the second main surface, the second heat dissipation portion is accommodated in the flow path, and the second opening is connected to the second heat dissipation portion.

12. The semiconductor device according to claim 11, wherein the first main surface and the second main surface are in contact with the flow path.

13. The semiconductor device according to claim 12, wherein the first heat dissipation portion is spaced apart from the second terminal, and the second heat dissipation portion is spaced apart from the first terminal.

14. The semiconductor device according to claim 13, wherein the second heat dissipation portion overlaps the first connection portion when viewed in the first direction.

15. The semiconductor device according to claim 14, wherein the second heat dissipation portion is spaced apart from the first heat dissipation portion when viewed in the first direction.

16. The semiconductor device according to claim 13, further comprising a third terminal located on the opposite side of the first terminal with respect to the first semiconductor element, the first semiconductor element being conductively joined to the third terminal.

17. The semiconductor device according to claim 16, further comprising a housing, the first terminal, the second terminal and the third terminal being supported by the housing, and the housing having a hollow portion including the flow path.

18. The semiconductor device described in claim 17, wherein the third terminal has a third main surface facing the side opposite to the side facing the first semiconductor element in the first direction, the third terminal is provided with a third heat dissipation portion protruding from the third main surface and a third opening opening from the third main surface, the third heat dissipation portion is contained in the hollow portion, and the third opening is connected to the third heat dissipation portion.

19. The semiconductor device according to claim 17, further comprising a conductive member connecting said first terminal and said second terminal, said conductive member being housed in said hollow portion.

20. A vehicle comprising: a driving source; and the semiconductor device according to claim 10, wherein the semiconductor device is electrically connected to the driving source.

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