Substrate support unit and substrate processing apparatus

Abstract

A substrate processing apparatus is provided. The substrate processing apparatus comprises: a housing having a processing space; a support unit which supports a substrate in the processing space; and a plasma generation unit which is positioned on one side of the housing, discharges a process gas to generate plasma, and supplies the generated plasma to the processing space, wherein the support unit comprises: a base body: a heater plate which is bonded to the upper surface of the base body by a first adhesive layer; and an electrostatic plate which is bonded to the upper surface of the heater plate by a second adhesive layer and attaches the substrate by an electrostatic force, and the electrostatic plate may have embossings which are formed to protrude from the lower surface to block plasma gas penetrating into the second adhesive layer and are in contact with the upper surface of the heater plate.

Description

Substrate support unit and substrate processing device

[0001] The present invention relates to a device for processing a substrate, and more particularly, to a device for processing a substrate using plasma.

[0002] Typically, an electrostatic chuck device is used to hold the substrate in place while various processes such as etching, cleaning, exposure, and deposition are performed within the process chamber.

[0003] The electrostatic chuck device can be roughly configured to include a chuck body for adsorbing and fixing a substrate and a base plate for supporting the chuck body on the lower surface of the chuck body.

[0004] The chuck body is equipped with a heater so that the substrate heating temperature can be controlled, and an electrode is embedded so that a process can be performed on the substrate while the substrate is adsorbed and fixed on the upper surface through an electrostatic chucking force generated by coupling with a power source.

[0005] And a bonding layer is formed to connect the chuck body and the base plate, so that the chuck body and the base plate are mutually bonded by the bonding layer.

[0006] Typically, the bonding material forming the bonding layer can be damaged by processing gases, etc. in the processing environment within the chamber, and such damage to the bonding layer can cause contaminants within the chamber, significantly reducing the process yield.

[0007] To prevent damage to the bonding layer, a sealing member is installed around the bonding layer to protect it. However, the sealing member is continuously exposed to plasma and begins to etch, damaging the bonding layer. This phenomenon is a major cause of backside helium line leaks and particle generation.

[0008] The purpose of the present invention is to provide a substrate support unit and a substrate processing device capable of minimizing and delaying plasma penetration into a bonding layer.

[0009] The purpose of the present invention is to provide a substrate support unit and a substrate processing device that protect a bonding layer from plasma gas.

[0010] The problems to be solved by the present invention are not limited to those described above, and other problems not mentioned will be clearly understood by a person having ordinary skill in the art from the description below.

[0011] According to one aspect of the present invention, there is provided a substrate processing device comprising: a housing having a processing space; a support unit for supporting a substrate in the processing space; and a plasma generating unit located on one side of the housing for generating plasma by discharging a process gas and supplying the generated plasma to the processing space; wherein the support unit comprises: a base body; a heater plate bonded to an upper surface of the base body by a first adhesive layer; and an electrostatic plate bonded to an upper surface of the heater plate by a second adhesive layer and for absorbing a substrate by electrostatic force, wherein the electrostatic plate has embossings formed to protrude from a lower surface and contact an upper surface of the heater plate to block plasma gas penetrating into the second adhesive layer.

[0012] Additionally, the embossings may have different diameters and may be formed in an annular ring shape with a center congruent with the center of the electrostatic plate.

[0013] Additionally, the electrostatic plate may further include a baffle blocking the passage between the ring-shaped embossings.

[0014] Additionally, the embossings may become thinner towards the center of the electrostatic plate.

[0015] Additionally, the embossings may have different diameters and may be formed in an arc shape with a center congruent with the center of the electrostatic plate.

[0016] Additionally, the embossings may be provided only on the edge area of ​​the electrostatic plate.

[0017] Additionally, the second adhesive layer may be provided only in the space between the embossings.

[0018] Additionally, the base body may have embossings formed to protrude from the upper surface and come into contact with the lower surface of the heater plate to block plasma gas penetrating into the first adhesive layer.

[0019] Additionally, the embossings may have different diameters and may be formed in an annular ring shape having the same center as the center of the base body.

[0020] Additionally, it may further include a partition wall blocking the passage between the ring-shaped embossings.

[0021] In addition, it may further include a sealing portion formed to surround the outer surfaces of the first adhesive layer and the second adhesive layer and protect the first adhesive layer and the second adhesive layer.

[0022] According to another aspect of the present invention, there is provided a substrate support unit comprising: a base body; a heater plate bonded to an upper surface of the base body by a first adhesive layer; and an electrostatic plate bonded to an upper surface of the heater plate by a second adhesive layer and adsorbing a substrate by electrostatic force, wherein the electrostatic plate has embossings formed to protrude from a lower surface to block plasma gas penetrating into the second adhesive layer and in contact with an upper surface of the heater plate.

[0023] Additionally, the embossings may have different diameters and may be formed in an annular ring shape with a center congruent with the center of the electrostatic plate.

[0024] Additionally, the electrostatic plate may further include a baffle blocking the passage between the ring-shaped embossings.

[0025] Additionally, the embossings may become thinner towards the center of the electrostatic plate.

[0026] Additionally, the embossings may be provided only on the edge area of ​​the electrostatic plate.

[0027] Additionally, the base body may have embossings formed to protrude from the upper surface and come into contact with the lower surface of the heater plate to block plasma gas penetrating into the first adhesive layer.

[0028] According to another aspect of the present invention, there is provided a substrate processing device comprising: a housing having a processing space; a support unit that supports a substrate in the processing space; a plasma generator located on one side of the housing, the plasma generator generating plasma by discharging a process gas and supplying the generated plasma to the processing space; and a baffle disposed on the upper portion of the support unit so that plasma moving from the plasma generator to the processing space is uniformly transmitted to the substrate; wherein the support unit comprises: a base body; a heater plate bonded to an upper surface of the base body by a first adhesive layer; and an electrostatic plate bonded to an upper surface of the heater plate by a second adhesive layer and absorbing a substrate by electrostatic force, wherein the electrostatic plate has embossings formed to protrude from a lower surface and come into contact with an upper surface of the heater plate to block plasma gas penetrating into the second adhesive layer, and the base body has embossings formed to protrude from a upper surface and come into contact with a lower surface of the heater plate to block plasma gas penetrating into the first adhesive layer.

[0029] Additionally, the embossings may have different diameters and may be formed in an annular ring shape having the same center as the center of the substrate support unit.

[0030] Additionally, each of the electrostatic plate and the base body may further include a partition wall that blocks a passage between the ring-shaped embossings.

[0031] In an embodiment, the penetration of plasma into the bonding layer can be minimized and delayed.

[0032] According to an embodiment, the bonding layer can be protected from plasma gas, helium leak can be minimized, and the life of the electrostatic chuck can be extended.

[0033] The effects of the present invention are not limited to those described above, and other effects not mentioned will be clearly understood by a person skilled in the art from the description below.

[0034] FIG. 1 is a plan view schematically illustrating a substrate processing facility according to one embodiment of the present invention.

[0035] FIG. 2 is a drawing showing a substrate processing device according to one embodiment of the present invention.

[0036] Fig. 3 is a cross-sectional view showing an electrostatic chuck according to an embodiment.

[0037] Figures 4 and 5 are drawings showing a state in which a sealing part is damaged by plasma.

[0038] Figures 6a and 6b are drawings showing an electrostatic plate.

[0039] Figures 7a to 9 are drawings showing various shapes and arrangements of embossing.

[0040] Fig. 10 is a cross-sectional view showing an electrostatic chuck according to another embodiment of the present invention.

[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily practice the present invention. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein. In addition, when describing preferred embodiments of the present invention in detail, if a detailed description of a related known function or configuration is determined to unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts that have similar functions and actions.

[0042] To "include" an element means that, unless otherwise stated, it may include other elements, but not to the exclusion of other elements. Specifically, terms such as "include" or "have" should be understood to specify the presence of a feature, number, step, operation, element, part, or combination thereof described in the specification, but not to preclude the presence or addition of one or more other features, numbers, steps, operations, elements, parts, or combinations thereof.

[0043] Singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, the shapes and sizes of elements in the drawings may be exaggerated for clarity.

[0044] While terms like "first" and "second" may be used to describe various components, these components should not be limited by these terms. These terms may be used to distinguish one component from another. For example, without departing from the scope of the present invention, a first component could be referred to as a "second component," and similarly, a second component could also be referred to as a "first component."

[0045] When a component is referred to as being "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but that there may be other components in between. Conversely, when a component is referred to as being "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between. Other expressions that describe the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", should be interpreted similarly.

[0046] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and shall not be construed in an idealized or overly formal sense unless explicitly defined herein.

[0047] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The written embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

[0048] FIG. 1 is a plan view schematically illustrating a substrate processing facility according to one embodiment of the present invention.

[0049] Hereinafter, referring to FIG. 1, a substrate processing equipment (1) has an equipment front end module (EFEM) (20) and a processing module (30). The equipment front end module (20) and the processing module (30) are arranged in one direction. Hereinafter, the direction in which the equipment front end module (20) and the processing module (30) are arranged is referred to as a first direction (11), and the direction perpendicular to the first direction (11) when viewed from above is referred to as a second direction (12).

[0050] The equipment front end module (20) has a load port (10) and a transfer frame (21). The load port (10) is arranged in front of the equipment front end module (20) in a first direction (11). The load port (10) has a plurality of support members (6). Each support member (6) is arranged in a row in a second direction (12), and a carrier (4) (e.g., a cassette, a FOUP, etc.) storing a substrate (W) to be provided to a process and a substrate (W) that has completed a process is positioned therein. The substrate (W) to be provided to a process and the substrate (W) that has completed a process are stored in the carrier (4). The transfer frame (21) is arranged between the load port (10) and the processing module (30). The transfer frame (21) includes an index robot (25) that is arranged inside the transfer frame and transfers the substrate (W) between the load port (10) and the processing module (30). The index robot (25) moves along a transport rail (27) provided in the second direction (12) to transport the substrate (W) between the carrier (4) and the processing module (30).

[0051] The processing module (30) may include a load lock chamber (40), a transfer chamber (50), a plurality of substrate processing devices (100), and a controller (70).

[0052] The load lock chamber (40) is arranged adjacent to the transfer frame (21). For example, the load lock chamber (40) may be arranged between the transfer chamber (50) and the equipment front end module (20). The load lock chamber (40) provides a waiting space for a substrate (W) to be provided for a process before being transferred to the substrate processing device (100), or for a substrate (W) that has completed a process before being transferred to the equipment front end module (20).

[0053] The transfer chamber (50) is arranged adjacent to the load lock chamber (40). The transfer chamber (50) has a polygonal body when viewed from above. On the outside of the body, the load lock chamber (40) and a plurality of substrate processing devices (100) are arranged along the periphery of the body. A passage (not shown) through which a substrate (W) enters and exits is formed on each side wall of the body, and the passage connects the transfer chamber (50) and the load lock chamber (40) or the substrate processing devices (100). A door (not shown) that opens and closes the passage to seal the interior is provided in each passage. A transfer robot (53) that transfers the substrate (W) between the load lock chamber (40) and the substrate processing devices (100) is arranged in the internal space of the transfer chamber (50). The return robot (53) transfers an unprocessed substrate (W) waiting in the load lock chamber (40) to the substrate processing device (100), or transfers a substrate (W) that has undergone a process to the load lock chamber (40). In addition, the substrate (W) is transferred between substrate processing devices (100) in order to sequentially or simultaneously provide the substrate (W) to a plurality of substrate processing devices (100).

[0054] The substrate processing device (100) may be arranged along the periphery of the transfer chamber (50). A plurality of substrate processing devices (100) may be provided. Processing for a substrate (W) is performed in each substrate processing device (100). The substrate processing device (100) receives the substrate (W) from the transfer robot (53), performs the processing, and provides the substrate (W) on which the processing has been completed to the transfer robot (53). The processing performed in each substrate processing device (100) may be different from each other. The process performed by the substrate processing device (100) may be one process in the process of producing a semiconductor device or a display panel using the substrate (W).

[0055] The term "substrate (W)" processed by equipment is a comprehensive concept encompassing all substrates used in the manufacture of semiconductor devices, flat panel displays (FPDs), and other products with circuit patterns formed on thin films. Examples of such substrates (W) include silicon wafers, glass substrates, and organic substrates.

[0056] FIG. 2 is a drawing showing a substrate processing device according to one embodiment of the present invention.

[0057] Referring to FIG. 2, the substrate processing device (100) performs a predetermined process on a substrate (W) using plasma. For example, the substrate processing device (100) can etch or ash a thin film on the substrate (W). The thin film may be a variety of films, such as a polysilicon film, a silicon oxide film, and a silicon nitride film. In addition, the thin film may be a natural oxide film or a chemically generated oxide film.

[0058] The substrate processing device (100) may include a process processing unit (200), a plasma generation unit (400), a gas supply unit (600), an exhaust unit (900), and a controller (C).

[0059] The process processing unit (200) may include a housing (210), a support unit (230), and a baffle (250).

[0060] The housing (210) has a processing space (212) inside which a substrate processing process is performed. The housing (210) may have a cylindrical shape with an open top. An opening (not shown) may be formed in a side wall of the housing (210). The substrate (W) enters and exits the housing (210) through the opening. The opening may be opened and closed by an opening / closing member such as a door (not shown). In addition, an exhaust hole (214) may be formed in the bottom surface of the housing (210). For example, when viewed from above, the housing (210) may have an exhaust hole (214) formed in an edge region of the housing (210) to exhaust plasma and / or gas within the processing space (212) to the outside of the substrate processing device (100). Process gases and / or byproducts within the processing space (212) may be exhausted to the outside of the processing space (212) through the exhaust hole (214). The exhaust hole (214) can be connected to the components included in the exhaust section (900) described later.

[0061] A plasma generation unit (400) may be installed on the upper part of the housing (210). The plasma generation unit (400) generates plasma by discharging a process gas and supplies the generated plasma to a processing space (212). The plasma generation unit (400) may include a plasma chamber (410), a power application unit (430), and a diffusion chamber (440).

[0062] The plasma chamber (410) may have an open upper surface and a closed lower surface. The plasma chamber (410) may have a cylindrical shape with an open upper surface and a closed lower surface. For example, the plasma chamber (410) may have a cylindrical shape. The plasma chamber (410) may have a plasma generation space (412). In addition, the plasma chamber (410) may be provided with a material including aluminum oxide (Al2O3). The upper surface of the plasma chamber (410) may be sealed by a gas port (610) described below.

[0063] The plasma generation space (412) may be supplied with a process gas and / or a purge gas, which will be described later. The gas supply unit (600), which will be described later, may supply the process gas and / or the purge gas to the plasma generation space (412). The process gas and / or the purge gas supplied by the gas supply unit (600) may be supplied to the plasma generation space (412), and the process gas and / or the purge gas supplied to the plasma generation space (412) may be supplied to the processing space (212) via the baffle (250).

[0064] The power application unit (430) applies high-frequency power to the plasma generation space (412). The power application unit (430) may include an antenna (432) and a power source (434).

[0065] The antenna (432) may be an inductively coupled plasma (ICP) antenna. The antenna (432) may be provided in a coil shape. The antenna (432) may be wound multiple times around the plasma chamber (410) outside the plasma chamber (410). The antenna (432) may be wound multiple times around the plasma chamber (410) in a spiral shape outside the plasma chamber (410). The antenna (432) may be wound around the plasma chamber (410) in an area corresponding to the plasma generation space (412).

[0066] The power source (434) applies power to the antenna (432). In particular, the power source (434) can apply high-frequency power to the antenna (432). The high-frequency power applied to the antenna (432) forms an induced electric field in the plasma generation space (412). The process gas supplied into the plasma generation space (412) can obtain energy required for ionization from the induced electric field and be converted into a plasma state. In addition, the power source (434) can be connected to one end of the antenna (432). The power source (434) can be connected to one end of the antenna (432) provided at a height corresponding to an upper region of the plasma chamber (410). In addition, the other end of the antenna (432) can be grounded. The other end of the antenna (432) provided at a height corresponding to a lower region of the plasma chamber (410) can be grounded. However, it is not limited to this, and a power source (434) may be connected to the other end of the antenna (432) and one end of the antenna (432) may be grounded.

[0067] The diffusion chamber (440) can diffuse the plasma generated in the plasma chamber (410) and the process gas and / or purge gas supplied to the plasma generation space (412). The diffusion chamber (440) can be disposed at the bottom of the plasma chamber (410). The diffusion chamber (440) can have a shape in which the top and bottom are open. The diffusion chamber (440) can have a funnel shape in which the bottom has a wider area than the top. The top of the diffusion chamber (440) can have a diameter corresponding to the plasma chamber (410). The bottom of the diffusion chamber (440) can have a diameter larger than the top of the diffusion chamber (440). The diameter of the diffusion chamber (440) can increase from the top to the bottom. In addition, the diffusion chamber (440) can have a diffusion space (442). The plasma generated in the plasma generation space (412) can be diffused while passing through the diffusion space (442). Plasma introduced into the diffusion space (442) can be introduced into the processing space (412) through the baffle (250).

[0068] The gas supply unit (600) can supply process gas and / or purge gas to the plasma generation space (412). The gas supply unit (600) can include a gas port (610), a process gas supply source (620), a purge gas supply source (630), and a gas supply line (640).

[0069] The gas port (610) can be coupled with the plasma chamber (410). The gas port (610) can be coupled to the upper portion of the plasma chamber (410). The gas port (610) can be coupled with the open upper region of the plasma chamber (410) to seal the plasma generation space (412).

[0070] The gas supply line (640) can be connected to the gas port (610). One end of the gas supply line (640) can be connected to the gas port (610), and the other end of the gas supply line (640) can be branched and connected to a process gas supply source (620) and a purge gas supply source (630), respectively.

[0071] The process gas supply source (620) supplies the process gas to the plasma generation space (412). The process gas supply source (620) can store the process gas. The process gas supplied to the plasma generation space (412) by the process gas supply source (620) can include fluorine and / or hydrogen. The process gas supplied to the plasma generation space (412) can be excited into a plasma state in the plasma generation space (412) by the power supply unit (430). In addition, the process gas supplied to the plasma generation space (412) by the process gas supply source (620) is diffused in the diffusion space (442) and flows into the processing space (212) through the first holes (252) of the baffle (250). Additionally, a valve (622) may be installed upstream of a branch point of a gas supply line (640) so as to control the unit time flow rate of the process gas supplied to the plasma generation space (412) by the process gas supply source (620). The valve (622) may be provided as a flow rate control valve. However, the present invention is not limited thereto, and the valve (622) may be modified into various known valves.

[0072] The purge gas supply source (630) can supply purge gas to the plasma generation space (412). The purge gas supply source (630) can store the purge gas. The purge gas supplied by the purge gas supply source (630) to the plasma generation space (412) may be an inert gas such as nitrogen. The purge gas supplied to the plasma generation space (412) allows the pressure of the processing space (212) of the housing (210) to reach a pressure substantially equal to atmospheric pressure from a state substantially close to vacuum pressure. In addition, the purge gas supplied by the purge gas supply source (630) to the plasma generation space (412) may be diffused in the diffusion space (442) and may flow into the processing space (212) through the hole (252) of the baffle (250). That is, the purge gas supply source (630) can supply the purge gas from the plasma generation space (412) to the processing space (212).

[0073] Additionally, a valve (632) may be installed upstream of a branch point of a gas supply line (640) so as to control the supply flow rate per unit time of the purge gas supplied to the plasma generation space (412) by the purge gas supply source (630). The valve (632) may be provided as a flow rate control valve. However, the present invention is not limited thereto, and the valve (632) may be modified into various known valves.

[0074] The exhaust unit (900) exhausts process gas and impurities inside the process treatment unit (200) to the outside. The exhaust unit (900) can exhaust impurities generated during the substrate (W) treatment process to the outside of the substrate treatment device (100). The exhaust unit (900) can exhaust process gas supplied into the treatment space (212) to the outside. The exhaust unit (900) can include an exhaust line (902) and a pressure reducing member (904). The exhaust line (902) can be connected to an exhaust hole (214) formed in the bottom surface of the housing (210). In addition, the exhaust line (902) can be connected to a pressure reducing member (904) that provides pressure reduction. Accordingly, the pressure reducing member (904) can provide pressure reduction to the treatment space (212). The pressure reducing member (904) can be a pump. The pressure reducing member (904) can discharge plasma and impurities remaining in the processing space (212) to the outside of the housing (210). In addition, the pressure reducing member (904) can provide pressure reduction to maintain the pressure of the processing space (212) at a preset pressure.

[0075] The controller (C) controls the substrate processing device (100). For example, the controller (C) can control the gas supply unit (600) and the exhaust unit (900).

[0076] The baffle (250) is positioned on the upper portion of the support unit (230) so as to face the support unit (230). The baffle (250) may be coupled to the plasma generation unit (400) or the housing (210) and may be positioned between the support unit (230) and the plasma generation unit (400). The baffle (250) has a structure in which plasma flowing into the processing space (212) is uniformly supplied to the substrate (W).

[0077] The support unit (230) supports the substrate (W) in the processing space (212). The support unit (230) may include an electrostatic chuck (300) and a support shaft (234). The electrostatic chuck (300) may have a mounting surface on which the substrate (W) is mounted. The electrostatic chuck (300) may support the substrate (W) in the processing space (212). The electrostatic chuck (300) may be supported by the support shaft (234). The electrostatic chuck (300) is connected to an external power source and may chuck the substrate (W) by electrostatic force.

[0078] A detailed explanation of the electrostatic chuck will be provided below.

[0079] Fig. 3 is a cross-sectional view showing an electrostatic chuck according to an embodiment, and Figs. 4 and 5 are drawings showing a state in which a sealing part is damaged by plasma.

[0080] Referring to FIGS. 3 to 5, the electrostatic chuck (300) may include a base body (310), a heater plate (330), an electrostatic plate (350), and a sealing portion (390).

[0081] The base body (310), the heater plate (330), and the electrostatic plate (350) can be joined by means of an adhesive. Specifically, the base body (310) and the heater plate (330) are joined by means of a first adhesive, and thus a first adhesive layer (320) is formed between the base body (310) and the heater plate (330). In addition, the heater plate (330) and the electrostatic plate (350) are joined by means of a second adhesive, and thus a second adhesive layer (340) is formed between the heater plate (330) and the electrostatic plate (350). The first adhesive and the second adhesive may be made of a material having a similar thermal expansion coefficient to the heater plate (330) and the electrostatic plate (350), and various adhesives capable of joining different materials may be used. Preferably, the first adhesive and the second adhesive may be a liquid silicone adhesive. At this time, the first adhesive and the second adhesive can be cured at room temperature or heat-cured to form the first adhesive layer (320) and the second adhesive layer (340).

[0082] The base body (310) functions as a support for installing the heater plate (330) and the electrostatic plate (350). The base body (310) is formed in a circular shape with a predetermined thickness and includes through holes (318) into which electrode rods (302, 304) for applying power to the electrostatic plate (350) and the heater plate (330) are inserted.

[0083] The above base body (310) is made of a metal material, and the metal may include, for example, any one of aluminum (Al), nickel (Ni), and SUS (Steel Use Satinless). Although not shown, the base body (310) may be connected to a high-frequency power supply unit (111).

[0084] The base body (310) is provided with a cooling conduit (316) through which a cooling fluid flows. The cooling conduit (316) is connected to a cooling fluid supply source (not shown) to cool the base body (310), and by cooling the base body (310), the substrate to be processed can be cooled together with the electrostatic plate (350), thereby cooling the substrate to a temperature required in the substrate processing process.

[0085] The electrostatic chuck (300) has a first gas passage (309) through which a gas for controlling the temperature of the substrate is supplied. The gas is supplied onto the lower surface of the substrate to control the temperature of the substrate, and an example of the gas may be helium (He) gas. The first gas passage (309) is connected to an externally located gas supply source (not shown) to receive the gas. The first gas passage (309) may be formed to vertically penetrate the heating plate (330) and the electrostatic plate (350). One or more first gas passages (309) may be formed, and it is preferable that a plurality of first gas passages (309) are formed to uniformly supply the gas to the entire surface of the substrate.

[0086] The heater plate (330) is a temperature control means of the electrostatic chuck (300), and a heater pattern (332) may be provided on the inside or bottom surface of the heater plate (330). The heater pattern (332) is a resistive element that generates heat by resisting a current applied from an external power source. At this time, the heater pattern (332) may be formed of molybdenum (Mo), stainless steel (SUS), nickel-chromium (Ni-Cr) alloy, tungsten (W), and preferably, Inconel.

[0087] Meanwhile, the heat generated from the heater plate (330) can be used to control the temperature of the gas and / or substrate (wafer) in a high-density plasma process.

[0088] The heater plate (330) is provided in a circular shape like the base body (310), and can be bonded to the base body (310) by a first adhesive layer. The heater plate (330) can be a separate or integral type, and at least one through-hole can be formed in the heater plate (330) through which an electrode rod (304) for supplying power to a chuck electrode (352) of an electrostatic plate (350) communicates.

[0089] The electrostatic plate (350) is placed at the top of the electrostatic chuck (300) and serves as a means for placing a substrate on its upper surface. Like the base body (310) and the heater plate (330), it is manufactured in a circular shape and can chuck or dechucking a substrate through an electrostatic chucking force. The electrostatic plate (350) is durable in the high-temperature environment within the housing (210) and may be made of a ceramic material so that the electrostatic force generated from the circular electrode can pass smoothly. For example, the electrostatic plate (350) may be made of an Al2O3-based material, or an aluminum nitride (AlN) material or a silicon carbide (SiC) material, which are ceramic materials with higher thermal conductivity than the Al2O3-based material.

[0090] The electrostatic plate (350) may be provided with a chuck electrode (352) inside. The chuck electrode (352) embedded in the electrostatic plate (350) generates an electrostatic chucking force by coupling with a power source, and through this chucking force, a substrate to be processed can be adsorbed and fixed to the upper surface of the electrostatic plate (350).

[0091] Figures 6a and 6b are drawings showing an electrostatic plate.

[0092] Referring to FIGS. 3 and 6A and 6B, the electrostatic plate (350) has embossings (370) on its lower surface. The embossings may have different diameters and may be formed in an annular ring shape with a center concentric with the center of the electrostatic plate. However, the shape or arrangement of the embossings is not limited thereto, and may be provided in various shapes and arrangements, as shown in FIGS. 7A to 9.

[0093] Embossings (370) may be formed to protrude from the lower surface of the electrostatic plate (350) to block plasma gas penetrating into the second adhesive layer (340). Embossings (3370) are provided to be in contact with the upper surface of the heater plate (330).

[0094] The sealing portion (390) may be provided to shield the first and second adhesive layers (320, 340) in the space between the base body (310) and the electrostatic plate (350) so as to surround the side perimeter of the first adhesive layer (320) and the second adhesive layer (340). The sealing portion (390) may be made of E-band or epoxy material.

[0095] As shown in FIGS. 4 and 5, if the sealing portion (390) is continuously affected by the plasma gas, a portion of the sealing portion (390) and the second adhesive layer (340) may be etched. However, the embossings (370) formed on the lower surface of the electrostatic plate (350) serve to block the penetrating plasma gas, thereby minimizing the inward penetration of the plasma gas. In addition, as shown in FIG. 5, even if the plasma gas penetrates inward, the amount of penetration is very small, so that the rate of damage to the second adhesive layer (340) can be slowed down. In addition, even if a helium gas leak occurs, the embossings (370) suppress it, so that detection is possible through the FDC, and process defects can be minimized.

[0096] Figures 7a to 9 are drawings showing various modified examples of embossing.

[0097] The embossing (370a) of the electrostatic plate (350a) of Fig. 7a may be provided in an arc shape with different diameters and the same center as the center of the electrostatic plate (350a).

[0098] The embossing (370b) of the electrostatic plate (350b) of Fig. 7b can be provided in a dot shape.

[0099] These electrostatic plates (350a, 350b) can increase the bonding between the heating plate (330) and the electrostatic plate (350) by providing the second adhesive layer (340) more uniformly than the electrostatic plate (350) illustrated in FIG. 6a.

[0100] The electrostatic plate (350c) of FIG. 7c may include a partition wall (372) that blocks the passage between the embossings (370). At this time, the first gas path (309) of the electrostatic plate (350c) may be provided at a location surrounded by the embossings (370) and the partition wall (372). This electrostatic plate (350c) may slow down the rate at which plasma gas penetrates into the surroundings by the embossings (370) and the partition wall (372) even if a portion of the second adhesive layer (340, see FIG. 5) is etched.

[0101] As in Fig. 8, the electrostatic plate (350d) may be provided with embossings (370) only on the edge area of ​​the electrostatic plate (350d). In addition, as in Fig. 9, the embossing (370) may have small protrusions (371) formed on the lower surface.

[0102] The embossings illustrated above have been illustrated and described as having the same thickness and height, but the embossings may become thinner or have different heights as they move toward the center of the electrostatic plate.

[0103] Figure 10 is a drawing showing another example of an electrostatic chuck.

[0104] Referring to FIG. 10, an electrostatic chuck (300f) according to another example includes a base body (310), a heater plate (330), an electrostatic plate (350), and a sealing portion (390), and these are provided with a configuration and function that are generally similar to the electrostatic chuck illustrated in FIG. 3. Therefore, the following will describe a modified example focusing on differences from the present embodiment.

[0105] In this modified example, the base body (310) has embossings (380) on its upper surface. The embossings (380) are formed to protrude from the upper surface of the base body (310) and come into contact with the lower surface of the heater plate (330) to block plasma gas from penetrating into the first adhesive layer (320). The embossings (380) may be provided in various forms as illustrated in FIGS. 7A to 9 .

[0106] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The written embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. In a device for processing a substrate, A housing having a processing space; A support unit for supporting a substrate in the above processing space; and A plasma generating unit is located on one side of the housing, and generates plasma by discharging a process gas and supplies the generated plasma to the processing space; The above support unit base body; A heater plate bonded to the upper surface of the base body by a first adhesive layer; By means of a second adhesive layer, it includes an electrostatic plate that is bonded to the upper surface of the heater plate and absorbs the substrate by electrostatic force, The above electrostatic plate A substrate processing device having embossings formed protruding from the lower surface and in contact with the upper surface of the heater plate to block plasma gas penetrating into the second adhesive layer.

2. In paragraph 1, The above embossings are A substrate processing device having an annular ring shape with different diameters and a center identical to the center of the electrostatic plate.

3. In paragraph 2, The above electrostatic plate A substrate processing device further comprising a partition wall blocking a passage between the ring-shaped embossings.

4. In paragraph 2, A substrate processing device in which the above embossings become thinner towards the center of the electrostatic plate.

5. In paragraph 1, The above embossings are A substrate processing device having an arc shape with different diameters and a center identical to the center of the electrostatic plate.

6. In paragraph 2, The above embossings are A substrate processing device provided only in the edge area of ​​the above electrostatic plate.

7. In paragraph 2, A substrate processing device wherein the second adhesive layer is provided only in the space between the embossings.

8. In paragraph 1, The above base body A substrate processing device having embossings formed to protrude from the upper surface and in contact with the lower surface of the heater plate to block plasma gas penetrating into the first adhesive layer.

9. In paragraph 8, The above embossings are A substrate processing device having an annular ring shape with different diameters and having the same center as the center of the base body.

10. In paragraph 9, A substrate processing device further comprising a partition wall blocking a passage between the ring-shaped embossings.

11. In paragraph 1, A substrate processing device further comprising a sealing portion formed to surround the outer surfaces of the first adhesive layer and the second adhesive layer and protect the first adhesive layer and the second adhesive layer.

12. In a substrate support unit provided in a device for processing a substrate using plasma: base body; A heater plate bonded to the upper surface of the base body by a first adhesive layer; By means of a second adhesive layer, it includes an electrostatic plate that is bonded to the upper surface of the heater plate and absorbs the substrate by electrostatic force, The above electrostatic plate A substrate support unit having embossings formed to protrude from the lower surface and in contact with the upper surface of the heater plate to block plasma gas penetrating into the second adhesive layer.

13. In paragraph 12, The above embossings are A substrate support unit having an annular ring shape with different diameters and having the same center as the center of the electrostatic plate.

14. In paragraph 13, The above electrostatic plate A substrate support unit further comprising a partition wall blocking a passage between the ring-shaped embossings.

15. In paragraph 13, The above embossings are substrate support units whose thickness becomes thinner towards the center of the electrostatic plate.

16. In paragraph 13, The above embossings are A substrate support unit provided only in the edge area of ​​the above electrostatic plate.

17. In paragraph 12, The above base body A substrate support unit having embossings formed to protrude from the upper surface and in contact with the lower surface of the heater plate to block plasma gas penetrating into the first adhesive layer.

18. In the substrate processing device, A housing having a processing space; A support unit for supporting a substrate in the above processing space; A plasma generating unit located on one side of the housing, generating plasma by discharging process gas, and supplying the generated plasma to the processing space; and A baffle is disposed on the upper portion of the support unit and includes a baffle that allows plasma moving from the plasma generating unit to the processing space to be uniformly transmitted to the substrate; The above support unit base body; A heater plate bonded to the upper surface of the base body by a first adhesive layer; By means of a second adhesive layer, it includes an electrostatic plate that is bonded to the upper surface of the heater plate and absorbs the substrate by electrostatic force, The above electrostatic plate It has embossings that are formed protruding from the lower surface and come into contact with the upper surface of the heater plate to block plasma gas penetrating into the second adhesive layer. The above base body A substrate processing device having embossings formed to protrude from the upper surface and in contact with the lower surface of the heater plate to block plasma gas penetrating into the first adhesive layer.

19. In paragraph 18, The above embossings are A substrate processing device having an annular ring shape with different diameters and having the same center as the center of the substrate support unit.

20. In paragraph 19, Each of the above electrostatic plate and the above base body A substrate processing device further comprising a partition wall blocking a passage between the ring-shaped embossings.

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