Semiconductor process apparatus and ignition chamber thereof

Abstract

Provided in the present application are a semiconductor process apparatus and an ignition chamber thereof. The ignition chamber comprises a chamber body and a conveying line. The chamber body comprises an inner combustion-chamber wall and an outer combustion-chamber wall that surrounds the inner combustion-chamber wall, wherein a diluent gas channel is formed between the inner combustion-chamber wall and the outer combustion-chamber wall; a diluent gas line is connected to the outer combustion-chamber wall and is in communication with the diluent gas channel; and a fuel gas line and a combustion-supporting gas line are connected to the inner combustion-chamber wall and are both in communication with the interior of a combustion chamber. The conveying line is configured to connect to a process chamber of a semiconductor process apparatus, and the conveying line is connected to the outer combustion-chamber wall and is in communication with the diluent gas channel; and an output port is provided in the inner combustion-chamber wall and connects the interior of the combustion chamber to the interior of the conveying line. A fuel gas and a combustion-supporting gas react in the combustion chamber to generate a reaction product. Heat produced during the reaction can heat a diluent gas, and the temperature of the heated diluent gas is higher than the dew-point temperature of the reaction product, thereby avoiding condensation of the reaction product, and also avoiding the problem of particles exceeding the standard.

Description

Semiconductor process equipment and ignition chamber thereof Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process equipment and an ignition chamber thereof. Background Art

[0002] During wet oxygen oxidation (WDO) operation, an external ignition device heats the ignition chamber via a heater, causing hydrogen and oxygen to react. This provides pure, high-temperature water vapor to the process chamber, which is used to form an oxide film on the silicon wafer surface. As the market advances, process requirements are also increasing, requiring the growth of a thin, uniform, and particle-free oxide film on the silicon wafer surface.

[0003] To meet process requirements, an appropriate amount of nitrogen is introduced into the ignition chamber during the hydrogen-oxygen combustion process to dilute the water vapor, thereby producing a uniform, thin oxide film with fewer particles. In existing technology, the diffusion of high-temperature water vapor in the nitrogen pipeline can generate condensed water, causing excessive particle content.

[0004] Therefore, how to prevent condensed water from causing excessive particles is a technical problem that technicians in this field urgently need to solve.

[0005] Summary of the Invention

[0006] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and an ignition chamber thereof, which can heat the dilution gas through the heat generated by the reaction of fuel gas and supporting gas, thereby increasing the temperature of the dilution gas and avoiding the problem of excessive particles caused by the generation of condensed water.

[0007] To achieve the objectives of the present application, an ignition chamber is provided for use in semiconductor process equipment, comprising a chamber body and a delivery pipeline. The chamber body comprises a combustion chamber inner wall and a combustion chamber outer wall surrounding the combustion chamber inner wall, forming a dilution gas channel therebetween. The combustion chamber outer wall is connected to a dilution gas pipeline, the dilution gas pipeline communicating with the dilution gas channel. The combustion chamber inner wall is connected to a fuel gas pipeline and an oxidant gas pipeline, both of which communicate with the interior of the combustion chamber.

[0008] The delivery pipeline is used to connect the process chamber of the semiconductor process equipment. The delivery pipeline is connected to the outer wall of the combustion chamber and communicated with the dilution gas channel. The inner wall of the combustion chamber is provided with an output port, and the output port communicates the interior of the combustion chamber with the interior of the delivery pipeline.

[0009] In some embodiments, the fuel gas pipeline is located inside the combustion-supporting gas pipeline, and a combustion-supporting gas flow channel is formed between the combustion-supporting gas pipeline and the fuel gas pipeline, and the combustion-supporting gas flow channel is connected to the interior of the combustion chamber.

[0010] In some embodiments, the length of the fuel gas pipeline is greater than the length of the combustion-supporting gas pipeline, the end of the fuel gas pipeline located outside the combustion-supporting gas pipeline is a closed end, and the part of the fuel gas pipeline located outside the combustion-supporting gas pipeline is provided with a fuel gas connecting pipe on the circumference for connecting to a fuel gas source.

[0011] In some embodiments, the inner wall of the combustion chamber is provided with a fuel gas inlet and a combustion-supporting gas inlet, the fuel gas inlet connects the fuel gas pipeline with the interior of the combustion chamber, and the combustion-supporting gas inlet connects the interior of the combustion chamber with the combustion-supporting gas pipeline. The number of the combustion-supporting gas inlets is more than two and they are arranged around the fuel gas inlet.

[0012] In some embodiments, the fuel gas inlet and the oxidant gas inlet are both located on a side of the inner wall of the combustion chamber away from the delivery pipeline.

[0013] In some embodiments, the combustion-supporting gas pipeline is located inside the dilution gas pipeline, and a dilution gas flow passage is formed between the dilution gas pipeline and the combustion-supporting gas pipeline, and the dilution gas flow passage is communicated with the dilution gas channel.

[0014] In some embodiments, the length of the combustion-supporting gas pipeline is greater than the length of the dilution gas pipeline, the end of the combustion-supporting gas pipeline located outside the dilution gas pipeline is a closed end, and the part of the combustion-supporting gas pipeline located outside the dilution gas pipeline is provided with a combustion-supporting gas connecting pipe on the circumference for connecting to a combustion-supporting gas source.

[0015] In some embodiments, the dilution gas pipeline is provided with a dilution gas connecting pipe on the peripheral side away from the combustion chamber for connecting to a dilution gas source.

[0016] In some embodiments, the output port is connected to an output tube, the output tube is located inside the delivery pipeline, the outer diameter of the output tube is smaller than the inner diameter of the delivery pipeline, and the length of the output tube is smaller than the length of the delivery pipeline.

[0017] In some embodiments, the inner diameter of the delivery pipeline is 1.5 to 2 times the outer diameter of the output pipe.

[0018] In some embodiments, the ignition chamber further includes a heater and a heat insulation device, the heat insulation device and the heater together form a heating and heat preservation cavity, and the chamber body is located in the heating and heat preservation cavity; and the heater is also arranged at the connection between the fuel gas pipeline and the combustion-supporting gas pipeline and the chamber body, and the fuel gas pipeline, the combustion-supporting gas pipeline and the chamber body are all partially located on the inside of the heater.

[0019] The present application also provides a semiconductor process equipment, comprising a process chamber and the above-mentioned ignition chamber provided in the present application, wherein the ignition chamber is connected to the process chamber through the delivery pipeline.

[0020] This application has the following beneficial effects:

[0021] The ignition chamber provided in the present application is used for semiconductor process equipment, including a chamber body and a delivery pipeline. The chamber body includes the inner wall of the combustion chamber and the outer wall of the combustion chamber surrounding the inner wall of the combustion chamber, and a dilution gas channel is formed between the two. The outer wall of the combustion chamber is connected to a dilution gas pipeline, and the dilution gas pipeline is connected to the dilution gas channel. The inner wall of the combustion chamber is connected to a fuel gas pipeline and a combustion-supporting gas pipeline, both of which are connected to the interior of the combustion chamber; the delivery pipeline is used to connect the process chamber of the semiconductor process equipment, the delivery pipeline is connected to the outer wall of the combustion chamber and is connected to the dilution gas channel, and the inner wall of the combustion chamber is provided with an output port, which connects the interior of the combustion chamber with the interior of the delivery pipeline.

[0022] During the process, fuel gas and combustion-supporting gas react within the combustion chamber to produce reaction products. The heat generated by the reaction heats the dilution gas in the dilution gas channel. The reaction products and dilution gas then mix in a delivery line and are transported to the process chamber. Because the heated dilution gas is above the dew point of the reaction products, condensation of the reaction products is prevented, minimizing the risk of excessive particulate matter.

[0023] The present application also provides a semiconductor process equipment including the above-mentioned ignition chamber, and having the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] FIG1 is a schematic structural diagram of a semiconductor process equipment provided by the present application;

[0025] FIG2 is a schematic structural diagram of the chamber body in FIG1 ;

[0026] FIG3 is a partial enlarged view of the chamber body in FIG2 ;

[0027] FIG4 is a cross-sectional view of the chamber body in FIG2 .

[0028] Among them, the figure marks in Figures 1 to 4 are: 100, heater; 200, chamber body; 201, fuel gas connecting pipe; 202, combustion-supporting gas connecting pipe; 203, dilution gas connecting pipe; 204, combustion chamber outer wall; 204a, dilution gas channel; 205, combustion chamber inner wall; 206, output pipe; 207, delivery pipeline; 208, fuel gas pipeline; 209, combustion-supporting gas pipeline; 209a, combustion-supporting gas flow channel; 210, dilution gas pipeline; 210a, dilution gas flow channel; 211, fuel gas inlet; 212, combustion-supporting gas inlet; 300, thermal insulation device; 400, process chamber. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment and the ignition chamber thereof provided by the present application are described in detail below with reference to the accompanying drawings.

[0030] The ignition chamber provided in this application is used in semiconductor process equipment. As shown in Figures 1 and 2, the ignition chamber includes a chamber body 200 and a delivery pipeline 207. Among them, the chamber body 200 includes a combustion chamber inner wall 205 and a combustion chamber outer wall 204 surrounding the combustion chamber inner wall 205, with a dilution gas channel 204a formed therebetween. The combustion chamber inner wall 205 is connected to a fuel gas pipeline 208 and a combustion-supporting gas pipeline 209. The inner cavity of the combustion chamber inner wall 205 is the interior of the combustion chamber. The fuel gas pipeline 208 and the combustion-supporting gas pipeline 209 are both connected to the interior of the combustion chamber. The fuel gas and the combustion-supporting gas enter the combustion chamber through the fuel gas pipeline 208 and the combustion-supporting gas pipeline 209 respectively, and react inside the combustion chamber to generate products. The delivery pipeline 207 is used to connect to the process chamber 400 of the semiconductor process equipment. The combustion chamber inner wall 205 is provided with an output port, which connects the interior of the combustion chamber with the interior of the delivery pipeline 207. The output port is located on the side of the combustion chamber inner wall 205 facing the delivery line 207. One end of the delivery line 207 is connected to the output port, thereby connecting the interior of the combustion chamber to the delivery line 207. The other end of the delivery line 207 is used to connect to the process chamber 400 and communicate with the interior of the process chamber 400, so that the reaction product can be delivered to the process chamber 400 via the delivery line 207. In one specific embodiment of the present application, the fuel gas is hydrogen, the supporting gas is oxygen, and the reaction product is water vapor. The user can select the fuel gas and supporting gas as needed, and this is not limited here.

[0031] The combustion chamber outer wall 204 is connected to a dilution gas line 210, which is in communication with the dilution gas channel 204a. A delivery line 207 is connected to the combustion chamber outer wall 204 and is in communication with the dilution gas channel 204a. The dilution gas enters the delivery line 207 through the dilution gas line 210 and the dilution gas channel 204a, diluting the reaction products in the delivery line 207 to an appropriate concentration before entering the process chamber 400 along with the reaction products. The dilution gas generally does not react with the reaction products and does not affect the process. In a specific embodiment of the present application, the dilution gas is nitrogen, but users may also use other dilution gases as needed, without limitation herein.

[0032] In some embodiments, the combustion chamber outer wall 204 and the delivery pipeline 207 can be integrally formed, thereby improving the structural strength of the ignition chamber and extending the service life of the ignition chamber. Of course, the combustion chamber outer wall 204 and the delivery pipeline 207 can also be connected by welding or other methods, which is not limited here.

[0033] In this embodiment, heat is generated during the reaction between the fuel gas and the combustion-supporting gas inside the combustion chamber, and the dilution gas in the dilution gas channel 204a is heated, so that the dilution gas is higher than the dew point temperature of the reaction product. The dilution gas can also heat the delivery pipeline 207 to prevent the reaction product from condensing on the inner wall of the delivery pipeline 207, and to prevent the reaction product from condensing into droplets during the process of being transported to the process chamber 400, thereby avoiding the problem of excessive particles.

[0034] In some embodiments, the ignition chamber further includes a heater 100, which can be positioned around at least a portion of the chamber body 200 to heat the fuel gas and the combustion-supporting gas, enabling them to react within the combustion chamber. As shown in FIG1 , the heater 100 can be positioned at the junctions of the fuel gas line 208 and the combustion-supporting gas line 209 with the chamber body 200. The fuel gas line 208, the combustion-supporting gas line 209, and the chamber body 200 are all partially located within the heater 100. The heater 100 heats the fuel gas and the combustion-supporting gas within the fuel gas line 208, the combustion-supporting gas line 209, and the chamber body 200, bringing them to their ignition point and allowing them to react within the combustion chamber. Furthermore, the dilution gas line 210 can also be partially located within the heater 100. While heating the fuel gas and the combustion-supporting gas, the heater 100 also heats the dilution gas within the dilution gas line 210. Furthermore, the heater 100 also heats the dilution gas within the dilution gas channel 204a. The dilution gas is heated twice as it flows through the dilution gas pipeline 210 and the dilution gas channel 204a, thereby further increasing the temperature and ensuring that the dilution gas is above the dew point temperature of the reaction products. Of course, the heater 100 may also adopt other structures, which are not limited here.

[0035] In some embodiments, the ignition chamber further includes a thermal insulation device 300, which can be disposed around a portion of the chamber body 200 to reduce heat dissipation from the chamber body 200. As shown in FIG1 , the thermal insulation device 300 and the heater 100 together form a heating and heat preservation chamber, and the chamber body 200 is located within the heating and heat preservation chamber. The thermal insulation device 300 can insulate the dilution gas in the dilution gas channel 204a, reduce heat dissipation of the dilution gas, increase the heat of the dilution gas, and reduce the risk of condensation of reaction products in the dilution gas. In addition, the thermal insulation device 300 can also reduce the release of heat outside the ignition chamber, reducing the risk of high temperature damaging other components.

[0036] In some embodiments, the fuel gas line 208 is located inside the combustion gas line 209. Furthermore, the fuel gas line 208 and the combustion gas line 209 are, for example, coaxially arranged. As shown in Figures 2 and 3, a fuel gas flow channel is formed inside the fuel gas line 208, and a combustion gas flow channel 209a is formed between the combustion gas line 209 and the fuel gas line 208. The combustion chamber inner wall 205 is provided with a fuel gas inlet 211 and a combustion gas inlet 212. The fuel gas inlet 211 connects the combustion chamber interior with the fuel gas flow channel inside the fuel gas line 208, while the combustion gas inlet 212 connects the combustion chamber interior with the combustion gas flow channel 209a. Fuel gas and combustion gas enter the combustion chamber through the fuel gas inlet 211 and the combustion gas inlet 212, respectively. The fuel gas line 208 and the combustion gas line 209 form a double-layer pipe structure, which saves space and improves the structural strength of the pipe. Of course, the user can also set the distribution of the fuel gas pipeline 208 and the oxygen-supporting gas pipeline 209 as needed. For example, the fuel gas pipeline 208 can be set outside the oxygen-supporting gas pipeline 209, which is not limited here.

[0037] In some embodiments, the fuel gas inlet 211 and the combustion gas inlet 212 are both located on the side of the combustion chamber inner wall 205 away from the delivery pipeline 207. As shown in Figure 2, the fuel gas inlet 211 and the combustion gas inlet 212 are both far away from the output port, thereby providing sufficient reaction space for the fuel gas and the combustion gas. The fuel gas and the combustion gas can fully react within the combustion chamber, and the resulting reaction products are discharged from the output port. This reduces the risk of the fuel gas and the combustion gas not fully reacting when entering the process chamber 400, thereby improving the reliability of the process. In addition, the user can also reasonably set the heating temperature of the heater 100 to increase the reaction speed of the fuel gas and the combustion gas, so that the fuel gas and the combustion gas fully react.

[0038] In some embodiments, the number of the oxidizing gas inlets 212 is two or more, and they are arranged around the fuel gas inlet 211. In the specific embodiment shown in Figure 4, the number of the oxidizing gas inlets 212 is 8, and they are evenly distributed around the fuel gas inlet 211, for example, in a square distribution. By using two or more oxidizing gas inlets 212 to be arranged around the fuel gas inlet 211, the contact area between the oxidizing gas and the fuel gas can be increased when the oxidizing gas flows into the interior of the combustion chamber, thereby accelerating the reaction speed. The diameter of the oxidizing gas inlet 212 can be smaller than the diameter of the fuel gas inlet 211. Controlling the flow rate of the fuel gas and oxidizing gas can enable the two to react fully, avoiding excess fuel gas or oxidizing gas affecting the process. Of course, the oxidizing gas inlet 212 can adopt other distribution methods, such as a circular distribution, etc.; the number of oxidizing gas inlets 212 is not limited to this.

[0039] In some embodiments, the chamber body 200 may be cylindrical. The fuel gas inlet 211 and the fuel gas outlet may be located at the midpoints of the two end surfaces of the chamber body 200, for example, coaxially with the chamber body 200, with the oxidant gas inlet 212 positioned around the fuel gas inlet 211. This allows the fuel gas and oxidant gas to fully react within the combustion chamber. Of course, the shape of the chamber body 200, as well as the positions of the fuel gas inlet 211 and the fuel gas outlet, can be customized according to user needs and are not limited here.

[0040] In some embodiments, the length of the fuel gas line 208 is greater than that of the oxidizing gas line 209. The end of the fuel gas line 208 outside the oxidizing gas line 209 is closed, and the portion of the fuel gas line 208 outside the oxidizing gas line 209 is provided with a fuel gas connection pipe 201 around its periphery for connection to a fuel gas source. As shown in Figure 2, the end of the fuel gas line 208 away from the chamber body 200 extends outside the oxidizing gas line 209, forming a first connector. A first end plate is provided at the end of the fuel gas line 208 away from the chamber body 200, sealing the end of the fuel gas line 208 and ensuring a tight seal within the fuel gas flow path within the fuel gas line 208. The fuel gas connecting pipe 201 is connected to the first connector (i.e., the portion of the fuel gas pipeline 208 located outside the oxidant gas pipeline 209) at its circumferential side. The fuel gas connecting pipe 201 is used to connect to a fuel gas source, and the fuel gas can enter the fuel gas flow channel inside the fuel gas pipeline 208 through the fuel gas connecting pipe 201. Of course, in actual applications, the end of the fuel gas pipeline 208 can also be an open end, that is, the first end plate can be omitted, and the fuel gas connecting pipe 201 can be sealed to the open end.

[0041] In some embodiments, the oxidant gas line 209 is located inside the dilution gas line 210. Furthermore, the oxidant gas line 209 and the dilution gas line 210 are, for example, coaxially arranged. As shown in Figures 2 and 3, a dilution gas flow channel 210a is formed between the dilution gas line 210 and the oxidant gas line 209. The dilution gas flow channel 210a is connected to the dilution gas channel 204a, allowing dilution gas to flow into the dilution gas channel 204a along the dilution gas flow channel 210a. The fuel gas line 208, the oxidant gas line 209, and the dilution gas line 210 can form a three-layer tube structure, further reducing the space occupied by the pipelines, enhancing the structural strength of the pipelines, and reducing the risk of pipeline damage. Of course, the present application is not limited to this. In actual applications, any two of the fuel gas line 208, the oxidant gas line 209, and the dilution gas line 210 can form a two-layer tube structure, with the other being provided separately. Alternatively, all three can be provided separately.

[0042] In some embodiments, the length of the oxidizing gas line 209 is greater than that of the dilution gas line 210. The end of the oxidizing gas line 209 outside the dilution gas line 210 is closed, and the portion of the oxidizing gas line 209 outside the dilution gas line 210 is provided with an oxidizing gas connection pipe 202 for connecting to the oxidizing gas source. As shown in Figure 2, the end of the oxidizing gas line 209 away from the chamber body 200 extends outside the dilution gas line 210, forming a second connector. The end of the oxidizing gas line 209 away from the chamber body 200 is provided with an annular second end plate. The inner ring of the second end plate is sealed with the fuel gas line 208, and the outer ring of the second end plate is sealed with the oxidizing gas line 209, thereby sealing the end of the oxidizing gas line 209, forming a closed end. The oxidizing gas connection pipe 202 is connected to the second connector (i.e., the portion of the oxidizing gas pipeline 209 located outside the dilution gas pipeline 210) at the circumferential side. The oxidizing gas connection pipe 202 is used to connect to the oxidizing gas source, and oxidizing gas can enter the oxidizing gas pipeline 209 through the oxidizing gas connection pipe 202. The second end plate described above can be used to seal the end of the oxidizing gas pipeline 209 away from the chamber body 200, thereby ensuring the sealing of the oxidizing gas flow channel 209a. Furthermore, in embodiments where the fuel gas pipeline 208 is longer than the oxidizing gas pipeline 209, the oxidizing gas connection pipe 202 can be connected to the second connector at the circumferential side to avoid the fuel gas pipeline 208 in space.

[0043] In some embodiments, the end of the dilution gas line 210 away from the combustion chamber is closed, and a dilution gas connection pipe 203 is provided around the dilution gas line 210. As shown in Figure 2, the end of the dilution gas line 210 away from the chamber body 200 is provided with an annular third end plate. The inner ring of the third end plate is sealed with the combustion-supporting gas line 209, and the outer ring of the third end plate is sealed with the dilution gas line 210, thereby sealing the end of the dilution gas line 210, forming a closed end. The dilution gas connection pipe 203 can be perpendicular to the dilution gas line 210 and connected to the dilution gas line 210 around the dilution gas line 210. The dilution gas connection pipe 203 is used to connect to the dilution gas source, and the dilution gas can enter the dilution gas flow channel 210a through the dilution gas connection pipe 203. With the help of the above-mentioned third end plate, the end of the dilution gas pipeline 210 away from the combustion chamber can be sealed, thereby ensuring the sealing of the dilution gas flow channel 210a. On this basis, in an embodiment where the length of the combustion-supporting gas pipeline 209 is greater than the length of the dilution gas pipeline 210, the combustion-supporting gas pipeline 209 can be avoided in space by connecting the dilution gas connecting pipe 203 to the dilution gas pipeline 210 on the circumferential side of the dilution gas pipeline 210.

[0044] In some embodiments, the fuel gas line 208 is enclosed within the combustion gas line 209 and welded to the combustion chamber inner wall 205. The combustion gas line 209 is enclosed within the dilution gas line 210 and welded to the combustion chamber inner wall 205. The combustion chamber inner wall 205 and the combustion gas line 209 are welded to each other. The combustion chamber outer wall 204 surrounds the combustion chamber inner wall 205 and is welded to the dilution gas line 210.

[0045] In some embodiments, the output port is connected to an output pipe 206, which is located on the inner side of the delivery pipeline 207. The outer diameter of the output pipe 206 is smaller than the inner diameter of the delivery pipeline 207. Furthermore, the output pipe 206 and the delivery pipeline 207 are, for example, coaxially arranged, and the length of the output pipe 206 is smaller than the length of the delivery pipeline 207. As shown in Figure 2, the high-temperature reaction products generated by the fuel gas and the supporting combustion gas enter the delivery pipeline 207 through the output pipe 206, and the dilution gas can enter the delivery pipeline 207 through the flow channel between the delivery pipeline 207 and the output pipe 206, and mix with the reaction products of the fuel gas and the supporting combustion gas in the delivery pipeline 207.

[0046] Exemplarily, the inner diameter of the delivery pipeline 207 is 1.5 to 2 times the outer diameter of the output pipe 206 . Of course, the user can also set the inner diameter of the delivery pipeline 207 and the outer diameter of the output pipe 206 as needed, which is not limited here.

[0047] By connecting the output port to an output pipe 206, and due to the relatively small inner diameter of the output pipe 206, the reaction product flowing in the output pipe 206 is affected by the Venturi effect, resulting in an increased flow rate and a decreased pressure. After the reaction product enters the delivery pipeline 207, it can still maintain a relatively high flow rate, so that the pressure in the area through which the reaction product flows is lower than the pressure of the nearby dilution gas. Under the action of the pressure differential, the dilution gas will flow toward the reaction product and mix with the reaction product. Ultimately, the dilution gas, driven by the reaction product, will flow toward the process chamber 400. Utilizing this effect, the reaction product can drive the dilution gas to flow rapidly toward the process chamber 400, preventing the reaction product from flowing back into the dilution gas channel 204a, thus eliminating the problem of reaction product condensation at the source.

[0048] In some embodiments, the output pipe 206 and the combustion chamber inner wall 205 may be an integrally formed structure, and the delivery pipeline 207 and the combustion chamber inner wall 204 may be an integrally formed structure.

[0049] In some embodiments, the chamber body 200, delivery line 207, output tube 206, and the three-layer tube structure are all made of quartz. Quartz can withstand high temperatures and has high structural strength, meeting process requirements. Of course, users can also choose other materials, such as ceramic, as needed, without limitation.

[0050] The present application also provides a semiconductor process equipment, including a process chamber 400 and the ignition chamber in the above embodiment.

[0051] In some embodiments, process chamber 400 is provided with a connecting flange, to which the ignition chamber's delivery line 207 is connected, thereby connecting the ignition chamber to process chamber 400. The fuel gas and the oxidizing gas react within the ignition chamber to produce reaction products. A dilution gas dilutes the reaction products and is transported along the delivery line 207 and the connecting flange into process chamber 400, where they participate in the process. The structure of other components of the semiconductor processing equipment can be referenced to existing technologies and will not be further described here.

[0052] The reaction between the fuel gas and the combustion-supporting gas in the ignition chamber heats the dilution gas, raising its temperature. This ensures that the dilution gas temperature is above the dew point of the reaction products during transport, thereby preventing condensation of the reaction products during transport and preventing excessive particle levels. The diluted reaction products enter the process chamber 400 in a gaseous state and react there, forming a uniform film on the wafer surface, improving process quality and enhancing product performance.

[0053] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. An ignition chamber for semiconductor process equipment, characterized in that: It comprises a chamber body and a delivery pipeline, wherein the chamber body comprises a combustion chamber inner wall and a combustion chamber outer wall surrounding the combustion chamber inner wall, a dilution gas channel is formed between the two, the combustion chamber outer wall is connected with a dilution gas pipeline, the dilution gas pipeline is communicated with the dilution gas channel, the combustion chamber inner wall is connected with a fuel gas pipeline and a combustion-supporting gas pipeline, both of which are communicated with the interior of the combustion chamber; The delivery pipeline is used to connect the process chamber of the semiconductor process equipment. The delivery pipeline is connected to the outer wall of the combustion chamber and communicated with the dilution gas channel. The inner wall of the combustion chamber is provided with an output port, and the output port communicates the interior of the combustion chamber with the interior of the delivery pipeline.

2. The ignition chamber according to claim 1, characterized in that The fuel gas pipeline is located inside the combustion-supporting gas pipeline, and a combustion-supporting gas flow channel is formed between the combustion-supporting gas pipeline and the fuel gas pipeline, and the combustion-supporting gas flow channel is communicated with the interior of the combustion chamber.

3. The ignition chamber according to claim 2, characterized in that: The length of the fuel gas pipeline is greater than that of the combustion-supporting gas pipeline, one end of the fuel gas pipeline located outside the combustion-supporting gas pipeline is a closed end, and a fuel gas connecting pipe for connecting to a fuel gas source is provided on the circumferential side of the portion of the fuel gas pipeline located outside the combustion-supporting gas pipeline.

4. The ignition chamber according to claim 2, characterized in that: The inner wall of the combustion chamber is provided with a fuel gas inlet and a combustion-supporting gas inlet. The fuel gas inlet connects the fuel gas pipeline with the interior of the combustion chamber, and the combustion-supporting gas inlet connects the interior of the combustion chamber with the combustion-supporting gas pipeline. The number of the combustion-supporting gas inlets is more than two and they are arranged around the fuel gas inlet.

5. The ignition chamber according to claim 4, characterized in that The fuel gas inlet and the oxidant gas inlet are both located on a side of the inner wall of the combustion chamber away from the delivery pipeline.

6. The ignition chamber according to any one of claims 1 to 5, characterized in that: The combustion-supporting gas pipeline is located inside the dilution gas pipeline, and a dilution gas flow passage is formed between the dilution gas pipeline and the combustion-supporting gas pipeline, and the dilution gas flow passage is communicated with the dilution gas channel.

7. The ignition chamber according to claim 6, characterized in that The length of the combustion-supporting gas pipeline is greater than that of the dilution gas pipeline, one end of the combustion-supporting gas pipeline located outside the dilution gas pipeline is a closed end, and a portion of the combustion-supporting gas pipeline located outside the dilution gas pipeline is provided with a combustion-supporting gas connecting pipe for connecting to a combustion-supporting gas source on the circumference.

8. The ignition chamber according to claim 7, characterized in that The dilution gas pipeline is provided with a dilution gas connecting pipe on the peripheral side away from the combustion chamber for connecting to a dilution gas source.

9. The ignition chamber according to any one of claims 1 to 5, characterized in that: The output port is connected to an output pipe, the output pipe is located inside the delivery pipeline, the outer diameter of the output pipe is smaller than the inner diameter of the delivery pipeline, and the length of the output pipe is smaller than the length of the delivery pipeline.

10. The ignition chamber according to claim 9, characterized in that The inner diameter of the delivery pipeline is 1.5 to 2 times the outer diameter of the output pipe.

11. The ignition chamber according to any one of claims 1 to 5, characterized in that: The ignition chamber also includes a heater and a heat insulation device, the heat insulation device and the heater together form a heating and heat preservation cavity, and the chamber body is located in the heating and heat preservation cavity; and the heater is also arranged at the connection between the fuel gas pipeline and the combustion-supporting gas pipeline and the chamber body, and the fuel gas pipeline, the combustion-supporting gas pipeline and the chamber body are partially located on the inner side of the heater.

12. A semiconductor process equipment, characterized in that: It comprises a process chamber and the ignition chamber according to any one of claims 1 to 11, wherein the ignition chamber is connected with the process chamber through the transfer line.

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