Light-emitting device, display device, photoelectric conversion device, electronic apparatus, lighting device, and mobile body

Abstract

A light-emitting device according to the present invention comprises a substrate, an interlayer insulation layer that is positioned on the substrate and has a conductive member embedded therein, a layered structure that is positioned on the interlayer insulation layer and is formed from a plurality of metal layers that are layered on each other, and a light-emitting element that is positioned on the layered structure. The plurality of metal layers include a first metal layer that includes a portion that contacts the conductive member and a second metal layer that is positioned on the first metal layer. The second metal layer has a reflection surface that reflects light from the light-emitting element toward the light-emitting element. The specific resistance of the material of the first metal layer is higher than the specific resistance of the material of the second metal layer. The reflectance of the material of the second metal layer is higher than the reflectance of the material of the first metal layer.

Description

Light-emitting device, display device, photoelectric conversion device, electronic device, lighting device, and mobile object

[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a mobile object.

[0002] Head-mounted displays and thin displays using organic EL elements, which are characterized by thinness, light weight, and low power consumption, have been put into practical use. Patent Document 1 proposes an optical resonant structure in which a reflective section is disposed below the organic EL element. The distance between the lower electrode of the organic EL element and the reflective section varies depending on the color emitted by the pixel, thereby obtaining light emission with enhanced brightness at the resonant wavelength of each color. Patent Document 2 proposes a structure that reduces the terminal resistance of the anode electrode when an optical resonant structure is formed in each pixel.

[0003] JP 2021-072282 A JP 2016-122612 A

[0004] The reflective portion used to provide an optical resonant structure may also function as part of wiring. The reflective function and the wiring function may require different characteristics. Some aspects of the present invention provide a reflective layer that has both the reflective function and the wiring function.

[0005] According to some embodiments, there is provided a light-emitting device comprising: a substrate; an interlayer insulating layer located on the substrate and having a conductive member embedded therein; a stacked structure located on the interlayer insulating layer and composed of a plurality of metal layers stacked on top of each other; and a light-emitting element located on the stacked structure, wherein the plurality of metal layers include a first metal layer including a portion in contact with the conductive member and a second metal layer located on the first metal layer, the second metal layer having a reflective surface that reflects light from the light-emitting element toward the light-emitting element, wherein the resistivity of the material of the first metal layer is higher than the resistivity of the material of the second metal layer, and the reflectivity of the material of the second metal layer is higher than the reflectivity of the material of the first metal layer.

[0006] The above embodiment provides a reflective layer that has both a reflective function and a wiring function.

[0007] Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which the same or similar elements are designated by the same reference numerals.

[0008] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments of the present invention, and are used, together with the description thereof, to explain the principles of the present invention.

[0023] Figure 1 is a cross-sectional view illustrating the configuration of a light-emitting device according to a first embodiment.

[0024] Figure 2 is a plan view illustrating the shape of a reflective layer according to the first embodiment.

[0025] Figure 3 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment.

[0026] Figure 4 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment.

[0027] Figure 5 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment.

[0028] Figure 6 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment.

[0029] Figure 7 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment.

[0030] Figure 8 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment.

[0031] Figure 9 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first embodiment. 19 is a cross-sectional view illustrating the configuration of a light-emitting device according to a tenth embodiment. FIG. 20 is a diagram illustrating an example of a display device using the light-emitting device according to the embodiment. FIG. 21 is a diagram illustrating an example of a photoelectric conversion device using the light-emitting device according to the embodiment. FIG. 22 is a diagram illustrating an example of an electronic device using the light-emitting device according to the embodiment. FIG. 23 is a diagram illustrating an example of a display device using the light-emitting device according to the embodiment. FIG. 24 is a diagram illustrating an example of a lighting device using the light-emitting device according to the embodiment. FIG. 25 is a diagram illustrating an example of a moving object using the light-emitting device according to the embodiment. FIG. 26 is a diagram illustrating an example of a wearable device using the light-emitting device according to the embodiment. FIG. 27 is a diagram illustrating an example of a wearable device using the light-emitting device according to the embodiment.

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] First Embodiment The cross-sectional structure of a light emitting device 100 according to a first embodiment will be described with reference to Fig. 1. In Fig. 1, the light emitting device 100 is arranged so that light is emitted upward in the drawing. In the following description, the positional relationship (particularly the vertical relationship) between the components in this arrangement will be described.

[0011] FIG. 1 focuses on a portion of the light-emitting device 100 that includes three pixels 101r, 101g, and 101b. The light-emitting device 100 may include three or more pixels. The pixel 101r is a pixel for emitting red light. The pixel 101g is a pixel for emitting green light. The pixel 101b is a pixel for emitting blue light. A light-emitting device 100 having such pixels can display a color image. However, the technology described in this specification is also applicable to a light-emitting device 100 that emits monochromatic light. The pixels 101r, 101g, and 101b may be collectively referred to as pixel 101. A description of the pixel 101 may apply to any of the pixels 101r, 101g, and 101b.

[0012] The pixel 101 includes a light-emitting element 120. The light-emitting element 120 may emit light with a brightness that corresponds to the value of a current flowing through the light-emitting element. In the following example, the light-emitting element 120 is an organic light-emitting element. However, the techniques described herein are also applicable to other types of light-emitting elements, such as light-emitting diodes and light-emitting transistors.

[0013] One or more circuit elements (e.g., transistors) are formed in the semiconductor substrate 102. For example, a plurality of impurity regions 103 are formed in the semiconductor substrate 102. A gate electrode 104 is disposed on the surface of the semiconductor substrate 102 via a gate insulating film. The gate electrode 104 and the two impurity regions 103 form a MOS (metal-oxide-semiconductor) transistor. One of the two impurity regions 103 that form the MOS transistor functions as a source, and the other functions as a drain. The MOS transistor may be used to drive a light-emitting element 120 included in a pixel 101. An element isolation region (e.g., STI (Shallow Trench Isolation)) may be formed in the semiconductor substrate 102.

[0014] An interlayer insulating layer 105 is disposed on a semiconductor substrate 102. The interlayer insulating layer 105 (specifically, its lower surface) is in contact with the semiconductor substrate 102 (specifically, its upper surface). One or more wiring layers 106 and a plurality of contact plugs 107 are embedded in the interlayer insulating layer 105. The one or more wiring layers 106 and the plurality of contact plugs 107 are conductive members for transmitting electrical signals or power supply voltages.

[0015] The plurality of contact plugs 107 may include contact plugs that connect circuit elements (e.g., impurity regions 103 or gate electrodes 104) formed in the semiconductor substrate 102 to the wiring layer 106. The plurality of contact plugs 107 may include contact plugs that connect wiring layers 106 of different layers to each other. The plurality of contact plugs 107 may include contact plugs that connect the wiring layer 106 to the reflective layer 108. The contact plugs 107 may be formed of a tungsten film including a barrier metal such as Ti / TiN.

[0016] The interlayer insulating layer 105 may be a boro-phospho-silicate glass (BPSG) film formed by thermal chemical vapor deposition (CVD) or a silicon oxide film formed by plasma enhanced CVD. The wiring layer 106 may include aluminum wiring or copper wiring. In the example of FIG. 1 , the light-emitting device 100 has two wiring layers 106. Alternatively, the light-emitting device 100 may have only one wiring layer 106 or three or more wiring layers 106. The multiple wiring layers 106 may contain a mixture of aluminum wiring and copper wiring.

[0017] A reflective layer 108 is disposed on the interlayer insulating layer 105. The reflective layer 108 (specifically, its lower surface) is in contact with the interlayer insulating layer 105 (specifically, its upper surface) and the contact plug 107 (specifically, its upper surface). In this manner, the reflective layer 108 includes a portion in contact with the contact plug 107. Alternatively, when a wiring layer 106 is formed on the interlayer insulating layer 105, the reflective layer 108 may include a portion in contact with the wiring layer 106. The reflective layer 108 is electrically connected to circuit elements (e.g., transistors) formed on the semiconductor substrate 102 through the wiring layer 106 and the contact plug 107.

[0018] The reflective layer 108 is separated for each pixel 101. Specifically, the reflective layer 108 includes a portion included in the pixel 101r, a portion included in the pixel 101g, and a portion included in the pixel 101b, and these portions are separated from each other.

[0019] The reflective layer 108 may have a thickness (e.g., 200 nm or more and 2000 nm or less, specifically, approximately 300 nm) that allows it to be used as a pad for the light-emitting device 100. When the reflective layer 108 can be used as a pad for the light-emitting device 100, it is not necessary to form a separate wiring layer for the pad, and therefore the cost of the light-emitting device 100 can be reduced.

[0020] The reflective layer 108 has a laminated structure made up of multiple metal layers stacked on top of each other. In the example of Fig. 1, the reflective layer 108 has a laminated structure made up of two metal layers stacked on top of each other, namely, metal layer 108a and metal layer 108b. The metal layer 108a and metal layer 108b are in contact with each other. The metal layer 108b is located on top of the metal layer a.

[0021] The metal layer 108a is the lowest layer of the multiple metal layers. The metal layer 108a includes a portion in contact with the interlayer insulating layer 105 and a portion in contact with the contact plug 107. The metal layer 108b is the uppermost layer of the multiple metal layers. The upper surface of the metal layer 108b is in contact with the lower surface of the optical adjustment layer 109. The reflective layer 108 reflects light emitted from the light-emitting element 120 toward the light-emitting element 120. Specifically, the metal layer 108b included in the reflective layer 108 has a reflective surface that reflects light from the light-emitting element 120 toward the light-emitting element 120. Both direct light directed from the light-emitting element 120 toward the outside of the light-emitting device 100 (upward in FIG. 1 ) and reflected light reflected by the reflective layer 108 are emitted from the pixel 101.

[0022] As described above, the upper surface of the reflective layer 108 reflects light from the light-emitting element 120, and the lower surface of the reflective layer 108 is in contact with a conductive member (e.g., contact plug 107) embedded in the interlayer insulating layer 105. Therefore, the required characteristics of the upper and lower surfaces of the reflective layer 108 are different. Therefore, the metal layers 108a and 108b may be formed of materials appropriate for these characteristics. For example, the resistivity of the material of the metal layer 108a may be higher than the resistivity of the material of the metal layer 108b. This reduces the contact resistance between the reflective layer 108 and the contact plug 107. The reflectivity of the material of the metal layer 108b may be higher than the reflectivity of the material of the metal layer 108a. This improves the light-emitting efficiency of the optical resonant structure formed by the reflective layer 108. Specifically, the metal layer 108a may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108b may be formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy. The metal layer 108a may be thinner than the metal layer 108b. The thickness of the metal layer 108b may be 10 nm or more and 100 nm or less. In the light-emitting device 100, a portion of the reflective layer 108 that is in contact with a conductive member (e.g., a contact plug 107) embedded in the interlayer insulating layer 105 is electrically connected to the reflective surface of the reflective layer 108.

[0023] Because the metal layer 108a is in contact with the underside of the metal layer 108b, the crystalline orientation of the metal layer 108b is affected by the crystalline orientation of the metal layer 108a. The effect on the orientation of the metal layer 108b may affect the electromigration and reliability of the wiring provided by the reflective layer 108. By forming the metal layer 108a as, for example, a stack of titanium nitride and titanium films, the effect of the crystalline orientation of the metal layer 108b can be reduced. Furthermore, the crystalline orientation of the metal layer 108b may be controlled by adjusting the thickness and deposition temperature of the metal layer 108a. The deposition temperature of the metal layer 108a may be, for example, about 250°C.

[0024] An optical adjustment layer 109 is disposed on the reflective layer 108. The optical adjustment layer 109 (specifically, its lower surface) is in contact with the reflective layer 108 (specifically, its upper surface). Furthermore, the optical adjustment layer 109 (specifically, its lower surface) also includes a portion in contact with the interlayer insulating layer 105. The optical adjustment layer 109 covers the upper surface of the reflective layer 108. The optical adjustment layer 109 may be formed of a material with high light transmittance, such as SiO , SiN, ITO, or IZO. Therefore, the optical adjustment layer 109 may be referred to as a light-transmitting layer. The optical adjustment layer 109 may be formed by combining multiple materials (e.g., SiO and ITO) in some pixels 101 (e.g., pixel 101r). Furthermore, the configuration of the optical adjustment layer 109 may differ for each pixel 101. When ITO is combined with the material of the optical adjustment layer 109, the contact resistance between the lower electrode 110 and the reflective layer 108 can be reduced by lowering the resistance of the lower electrode 110.

[0025] The thickness of the optical adjustment layer 109 may be different for each pixel 101. For example, the thickness of the optical adjustment layer 109 may be a value corresponding to the resonance wavelength of each pixel 101. Of the optical adjustment layer 109, the thickness of the portion included in pixel 101r is denoted as Tr, the thickness of the portion included in pixel 101g is denoted as Tg, and the thickness of the portion included in pixel 101b is denoted as Tb. When the thicknesses Tr, Tg, and Tb of the optical adjustment layer 109 have values ​​corresponding to the resonance wavelengths of red light, green light, and blue light, respectively, Tr>Tg>Tb can be satisfied.

[0026] A lower electrode 110 is disposed on the optical adjustment layer 109. A portion of the lower electrode 110 (specifically, its lower surface) is in contact with the optical adjustment layer 109 (specifically, its upper surface). The light-emitting device 100 has an individual lower electrode 110 for each pixel 101. That is, the lower electrode 110 of one pixel 101 (e.g., pixel 101r) and the lower electrode 110 of another pixel 101 (e.g., pixel 101b) are separated from each other.

[0027] A portion of the lower electrode 110 penetrates the optical adjustment layer 109 and contacts the reflective layer 108. Specifically, in the example of FIG. 1, a portion of the lower electrode 110 further penetrates the metal layer 108b and contacts the metal layer 108a (specifically, its upper surface). As a result, the distance between the portion of the lower electrode 110 closest to the semiconductor substrate 102 (i.e., the portion in contact with the metal layer 108a) and the semiconductor substrate 102 is shorter than the distance between the semiconductor substrate 102 and the reflective surface (part of the upper surface) of the reflective layer 108. As described above, by making the resistivity of the material of the metal layer 108a higher than the resistivity of the material of the metal layer 108b, the contact resistance between the metal layer 108a and the lower electrode 110 can be reduced. The lower electrode 110 can be formed of a highly transparent material such as ITO or IZO. In the example of FIG. 1, a portion of the lower electrode 110 also contacts the metal layer 108b. Alternatively, the bottom electrode 110 may not contact the metal layer 108b.

[0028] An isolating member 111 is disposed on the lower electrode 110. A portion of the isolating member 111 (specifically, its lower surface) is in contact with the lower electrode 110 (specifically, its upper surface). The isolating member 111 covers a portion of the lower electrode 110 and does not cover a portion of the lower electrode 110. The portion of the lower electrode 110 covered by the isolating member 111 includes the portion of the lower electrode 110 that penetrates the optical adjustment layer 109. In other words, the isolating member 111 penetrates into the recessed portion of the lower electrode 110. The isolating member 111 can be formed of, for example, SiO. The isolating member 111 may also be called a bank.

[0029] An organic layer 112 is disposed on the optical adjustment layer 109, the lower electrode 110, and the separating member 111. The organic layer 112 (specifically, its lower surface) is in contact with the optical adjustment layer 109 (specifically, a portion of its upper surface), the lower electrode 110 (specifically, a portion of its upper surface), and the separating member 111 (specifically, its upper surface). The organic layer 112 includes at least an organic light-emitting material. The organic layer 112 may further include a charge transport layer, a charge blocking layer, a carrier generation layer, etc. The lower electrode 110 includes a contact portion in contact with the organic layer 112 and a non-contact portion separated from the organic layer 112 by the separating member 111. At least a portion of the contact portion of the lower electrode 110 is surrounded by the non-contact portion of the lower electrode 110. This contact portion becomes the light-emitting region of the light-emitting element 120. Therefore, the separating member 111 defines the light-emitting region of the light-emitting element 120.

[0030] An upper electrode 113 is disposed on the organic layer 112. Thus, the upper electrode 113 is located on the lower electrode 110. The upper electrode 113 (specifically, its lower surface) is in contact with the organic layer 112 (specifically, its upper surface). The upper electrode 113 may be formed of a transparent material so as to be able to transmit light emitted by the organic layer 112. For example, the upper electrode 113 may be a thin film of gold, platinum, silver, aluminum, chromium, magnesium, or an alloy thereof.

[0031] The light-emitting element 120 is formed by a portion of the lower electrode 110, a portion of the organic layer 112, and a portion of the upper electrode 113. Specifically, the light-emitting element 120 is formed by a portion of the lower electrode 110 surrounded by the separating member 111, a portion of the organic layer 112 overlapping this surrounded portion, and a portion of the upper electrode 113 overlapping this surrounded portion. The light-emitting element 120 is located on the optical adjustment layer 109. The lower electrode 110 can function as an anode of the light-emitting element 120. Therefore, the lower electrode 110 may be referred to as an anode electrode. The upper electrode 113 can function as a cathode of the light-emitting element 120. Therefore, the upper electrode 113 may be referred to as a cathode electrode. The lower electrode 110 is in contact with the reflective layer 108 at a position that does not overlap the light-emitting element 120 in a plan view of the surface of the semiconductor substrate 102. The portion of the lower electrode 110 surrounded by the separating member 111 may be flat.

[0032] A sealing film 114 is disposed on the upper electrode 113. The sealing film 114 (specifically, its lower surface) is in contact with the upper electrode 113 (specifically, its upper surface). The upper surface of the sealing film 114 is flatter than the lower surface of the sealing film 114. The sealing film 114 may have a function of preventing moisture from penetrating into the semiconductor substrate 102, the organic layer 112, and the upper electrode 113. The sealing film 114 may be, for example, a silicon nitride film formed by plasma chemical vapor deposition (CVD) or atomic layer deposition (ALD), or an Al ２ O ３ The sealing film 114 may be a composite film such as a silicon dioxide film or a silicon dioxide film. The thickness of the sealing film 114 may be 2 μm or more.

[0033] Color filters 115r, 115g, and 115b are disposed on the sealing film 114. The color filters 115r, 115g, and 115b (specifically, their lower surfaces) are in contact with the sealing film 114 (specifically, its upper surface). The color filter 115r is included in the pixel 101r and selectively transmits red light. The color filter 115g is included in the pixel 101g and selectively transmits green light. The color filter 115b is included in the pixel 101b and selectively transmits blue light.

[0034] A microlens 116 is disposed on the color filters 115r, 115g, and 115b. The microlens 116 (specifically, its lower surface) is in contact with the color filters 115r, 115g, and 115b (specifically, their upper surfaces). The microlens 116 may have a uniform shape over the entire light-emitting region of the light-emitting element 120, or may have partially different curvatures.

[0035] Next, with reference to FIG. 2 , the shape of the reflective layer 108 in a planar view relative to the surface of the semiconductor substrate 102 will be described. In FIG. 2 , attention is focused only on the reflective layer 108. The cross-sectional view of line A-B in FIG. 2 may correspond to FIG. 1. The reflective layer 108 is separated into multiple portions 108c. One portion 108c is included in one pixel 101. In FIG. 2 , only two of the multiple portions 108c are labeled with reference numerals. In the example of FIG. 2 , the portion 108c has a hexagonal shape. Alternatively, the portion 108c may have another shape, for example, another polygonal shape. The multiple portions 108c may have the same size or different sizes. The multiple portions 108c may have the same shape or different shapes. For example, the multiple portions 108c may have different sizes and shapes for each emitted color.

[0036] The portion 108c includes a region 108d that is in contact with the lower electrode 110. An opening is formed in the metal layer 108b in the region 108d, and a portion of the lower electrode 110 passes through this opening. In the example of FIG. 2, one portion 108c has only one region 108d. Alternatively, one portion 108c may have multiple regions 108d, and in each of the multiple regions 108d, a portion of the lower electrode 110 may be in contact with the reflective layer 108. The area and density of one or more regions 108d in one portion 108c may be set as appropriate.

[0037] 3A to 4D, a method for manufacturing the light emitting device 100 will be described. First, a wiring layer 106, contact plugs 107, and an interlayer insulating layer 105 are formed on a semiconductor substrate 102 on which circuit elements have been formed. These components may be formed using existing techniques, and therefore detailed description thereof will be omitted.

[0038] Thereafter, a metal layer 108a is formed on the interlayer insulating layer 105 by sputtering. The material of the metal layer 108a may be the material described above, for example, Ti / TiN. Thereafter, a metal layer 108b is formed on the metal layer 108a by sputtering. The material of the metal layer 108b may be the material described above, for example, AlCu. The reflective layer 108 is formed by a laminated structure of the metal layers 108a and 108b. Thereafter, the reflective layer 108 is divided into the multiple portions 108c shown in FIG. 2 by performing a photolithography process and a dry etching process on the reflective layer 108. This forms the structure shown in FIG. 3A.

[0039] Thereafter, an interference film 301 is formed on the reflective layer 108 by plasma CVD. This forms the structure shown in FIG. 3B. In the description of the steps from FIG. 3B onward, the semiconductor substrate 102 and the lower side of the interlayer insulating layer 105 are omitted. The material of the interference film 301 may be, for example, SiO.

[0040] Thereafter, an opening 302 is formed in the interference film 301 so as to expose the upper surface of the portion 108c of the reflective layer 108 included in the pixel 101g. This forms the structure shown in FIG. 3C. In the pixel 101g, the light-emitting element 120 is formed at a position overlapping the exposed portion. The opening 302 may be formed by a photolithography process and a dry etching process. Because the difference between the material of the interference film 301 (e.g., SiO) and the material of the metal layer 108b (e.g., AlCu) can increase the etching selectivity, the amount of recessing of the upper surface of the metal layer 108b can be reduced.

[0041] Thereafter, an interference film 303 is formed on the interference film 301 by plasma CVD. This forms the structure shown in FIG. 3D. The material of the interference film 303 may be, for example, SiO. A portion of the interference film 303 extends into the opening 302.

[0042] Thereafter, an opening 401 is formed in the interference films 301 and 303 so as to expose the upper surface of the portion 108c of the reflective layer 108 included in pixel 101b. This forms the structure shown in FIG. 4A . In pixel 101r, a light-emitting element 120 is formed at a position overlapping the exposed portion. The opening 401 may be formed by a photolithography process and a dry etching process. Because the difference between the material of the interference films 301 and 303 (e.g., SiO) and the material of the metal layer 108b (e.g., AlCu) can increase the etching selectivity, the amount of recessing of the upper surface of the metal layer 108b can be reduced.

[0043] Thereafter, an interference film 402 is formed on the interference film 303 by plasma CVD. This forms the structure shown in FIG. 4B . The material of the interference film 402 may be, for example, SiO 2 . A portion of the interference film 402 extends into the opening 401. The interference films 301, 303, and 402 form the optical adjustment layer 109.

[0044] Thereafter, a contact hole 403 is formed through the optical adjustment layer 109 and the metal layer 108b so as to expose a portion of the top surface of the metal layer 108a, thereby forming the structure shown in Fig. 4C. The contact hole 403 may be formed by a photolithography process and a dry etching process.

[0045] Thereafter, a conductive film (e.g., an ITO film) is formed on the optical adjustment layer 109 by sputtering. Part of the conductive film enters the contact hole 403 and contacts the metal layer 108a. The lower electrode 110 is formed by removing unnecessary portions of this conductive film by photolithography and dry etching. Thereafter, an insulating film (e.g., an SiO film) is formed on the lower electrode 110 by plasma CVD, and the separating member 111 is formed by removing unnecessary portions of this conductive film by photolithography and dry etching. This forms the structure shown in FIG. 4D.

[0046] Thereafter, the organic layer 112, the upper electrode 113, the sealing film 114, the color filters 115r, 115g, and 115b, and the microlens 116 are formed in this order, thereby manufacturing the light emitting device 100. These components may be formed using existing techniques, and therefore detailed description thereof will be omitted.

[0047] If another metal layer is etched using the metal layer 108b as an underlying layer, the etching selectivity cannot be increased, resulting in a large amount of recession of the upper surface of the metal layer 108b. This recession can result in a step on the upper surface of the metal layer 108b. If the organic layer 112 is formed on this step, a portion of the organic layer 112 becomes thin due to the step, strengthening the electric field between the upper electrode 113 and the lower electrode 110 and potentially causing leakage current. However, with the above-described manufacturing method, etching of the other metal layer using the metal layer 108b as an underlying layer is not performed. Therefore, a step is less likely to occur in the portion of the reflective layer 108 that functions as a reflective surface. This reduces the occurrence of the aforementioned leakage current. Furthermore, as shown in FIG. 4C , during the formation of the contact hole 403, the portion of the optical adjustment layer 109 that overlaps the light-emitting element 120 is covered with resist, thereby maintaining the thickness of the optical adjustment layer 109. This improves the controllability of the optical adjustment layer 109 in the optical resonance structure.

[0048] Second Embodiment The cross-sectional structure of a light emitting device 500 according to a second embodiment will be described with reference to Fig. 5. The following mainly describes the differences between the light emitting device 500 and the light emitting device 100, and redundant descriptions of the differences that may be the same as the light emitting device 100 will be omitted.

[0049] The reflective layer 108 has a layered structure made up of multiple metal layers stacked on top of each other. In the example of Fig. 5, the reflective layer 108 has a layered structure made up of four metal layers stacked on top of each other, namely, metal layer 108c, metal layer 108d, metal layer 108e, and metal layer 108f. Metal layer 108c and metal layer 108d are in contact with each other. Metal layer 108d is located on metal layer 108c. Metal layer 108d and metal layer 108e are in contact with each other. Metal layer 108e is located on metal layer 108d. Metal layer 108e and metal layer 108f are in contact with each other. Metal layer 108f is located on metal layer 108e. In other words, metal layer 108e is located below metal layer 108f.

[0050] The metal layer 108c is the bottom layer of the multiple metal layers. The metal layer 108c includes a portion in contact with the interlayer insulating layer 105 and a portion in contact with the contact plug 107. The metal layer 108f is the top layer of the multiple metal layers. The top surface of the metal layer 108f is in contact with the bottom surface of the optical adjustment layer 109. The metal layer 108f included in the reflective layer 108 has a reflective surface that reflects light from the light-emitting element 120 toward the light-emitting element 120.

[0051] The resistivity of each of the materials of the metal layer 108c and the metal layer 108e may be higher than the resistivity of either of the materials of the metal layer 108d and the metal layer 108f. This reduces the contact resistance between the reflective layer 108 and the contact plug 107. The reflectivity of each of the materials of the metal layer 108d and the metal layer 108f may be higher than the reflectivity of either of the materials of the metal layer 108c and the metal layer 108e. This improves the light-emitting efficiency of the optical resonant structure formed by the reflective layer 108. Each of the metal layer 108c and the metal layer 108e may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108e may be the same material as the metal layer 108c or a different material. Each of the metal layer 108d and the metal layer 108f may be formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy. Metal layer 108d may be made of the same material as metal layer 108f, or may be made of a different material, for example, metal layer 108f may be made of a silver alloy and metal layer 108d may be made of an aluminum alloy.

[0052] The metal layer 108f may be thinner than the metal layer 108d. For example, the thickness of the metal layer 108f may be about 100 nm. The thickness of the metal layer 108d may be about 200 nm. By making the metal layer 108f thinner than the metal layer 108d, the growth of grains on the metal surface can be suppressed, and the reflectance of the reflective layer 108 can be improved.

[0053] The metal layer 108d may be disposed to reduce the resistance value of the entire reflective layer 108. Therefore, the metal layer 108d may be thicker than both the metal layer 108c and the metal layer 108e. For example, when the reflective layer 108 also serves as a pad electrode, the metal layer 108d may be disposed to reduce the wiring routing resistance.

[0054] In the light-emitting device 500, a portion of the lower electrode 110 penetrates the metal layer 108 f and contacts the upper surface of the metal layer 108 e. Therefore, compared to the light-emitting device 100, the distance between the lower end and the upper end of the lower electrode 110 can be reduced, and the resistance between the light-emitting element 120 and the reflective layer 108 can be reduced.

[0055] The light emitting device 500 may be manufactured by stacking four metal layers on the interlayer insulating layer 105 and dividing the layers into a plurality of portions 108c in the process of FIG. 3A.

[0056] Third Embodiment The cross-sectional structure of a light-emitting device 600 according to a third embodiment will be described with reference to Fig. 6. The following mainly describes the differences between the light-emitting device 600 and the light-emitting device 100, and redundant descriptions of the differences that may be the same as the light-emitting device 100 will be omitted. These differences may be applied to the second embodiment.

[0057] The lower electrode 110 has a plurality of steps between the portion in contact with the organic layer 112 and the portion in contact with the reflective layer 108 (i.e., the portion 601). This makes the slope of the portion 601 of the lower electrode 110 gentler, which makes it possible to prevent the portion 601 from becoming thin, and to prevent an increase in resistance or step disconnection of the portion 601.

[0058] One step in portion 601 of the lower electrode 110 can be formed by forming an opening not only in the interference film 301 but also in the portion where the contact hole 403 of the pixel 101r is to be formed during the process of Fig. 3C. Another step in portion 601 of the lower electrode 110 can be formed by forming an opening not only in the interference film 301 but also in the portion where the contact hole 403 of the pixel 101r is to be formed during the process of Fig. 4A.

[0059] <Fourth Embodiment> The cross-sectional structure of a light-emitting device 700 according to a fourth embodiment will be described with reference to Fig. 7. The following mainly describes the differences between the light-emitting device 700 and the light-emitting device 100, and redundant descriptions of the differences that may be the same as the light-emitting device 100 will be omitted. These differences may be applied to the second or third embodiment.

[0060] The lower electrode 110 of the light-emitting device 700 is in contact with the upper surface of the metal layer 108b without penetrating the metal layer 108b. As a result, the distance between the portion of the lower electrode 110 closest to the semiconductor substrate 102 (i.e., the portion in contact with the metal layer 108b) and the semiconductor substrate 102 is the same as the distance between the semiconductor substrate 102 and the reflective surface (part of the upper surface) of the reflective layer 108. This allows the distance between the lower end and upper end of the lower electrode 110 to be reduced compared to the light-emitting device 100, thereby reducing the resistance between the light-emitting element 120 and the reflective layer 108.

[0061] In the light emitting device 700, the material of the metal layer 108b may be selected so as to reduce the difference in work function between the metal layer 108b and the lower electrode 110. This can suppress an increase in contact resistance and stabilize the resistance.

[0062] The light emitting device 700 may be manufactured by forming a contact hole 403 that penetrates the optical adjustment layer 109 so as to expose a portion of the upper surface of the metal layer 108b in the step of FIG. 4C.

[0063] Fifth Embodiment A light emitting device 800 according to a fifth embodiment will be described with reference to FIGS. 8 and 9 . FIG. 8 describes the cross-sectional structure of the light emitting device 800. FIG. 9 describes the shape of the reflective layer 108 of the light emitting device 800 in a plan view relative to the surface of the semiconductor substrate 102. In FIG. 9 , attention is focused only on the reflective layer 108. The cross-sectional view taken along line CD in FIG. 9 can correspond to FIG. 8 . The following mainly describes the differences between the light emitting device 800 and the light emitting device 100, and redundant descriptions of the differences that may be the same as those in the light emitting device 100 will be omitted. This difference may be applied to any of the second to fourth embodiments.

[0064] The reflective layer 108 is divided into one portion 108e and multiple portions 108f. In FIG. 9, only two of the multiple portions 108f are labeled. The portion 108e is disposed in common to multiple pixels 101. The portion 108e (specifically, the upper surface of the metal layer 108b) includes a reflective surface in each pixel 101. One pixel 101 includes one portion 108f. A portion of the lower electrode 110 contacts the portion 108f (specifically, the lower surface of the metal layer 108a). Furthermore, a conductive member (e.g., contact plug 107) embedded in the interlayer insulating layer 105 contacts the portion 108f (specifically, the lower surface of the metal layer 108a). Thus, in the light-emitting device 800, the portion of the reflective layer 108 that contacts the conductive member (e.g., contact plug 107) embedded in the interlayer insulating layer 105 is electrically isolated from the reflective surface of the reflective layer 108. This allows the potential of the portion 108 e of the reflective layer 108 to be floating, thereby suppressing a decrease in the reliability of the organic layer 112 caused by a strong electric field that may occur between the reflective layers 108 of two adjacent pixels 101 of the light-emitting device 100.

[0065] In the light-emitting device 800, the portion 108f of the reflective layer 108 does not include the metal layer 108b. Therefore, the lower electrode 110 does not contact the metal layer 108b. As a result, it is possible to suppress a strong electric field that may occur between the reflective layers 108 of two adjacent pixels 101 of the light-emitting device 100. It is also possible to suppress the formation of a high-resistance metal oxide film between the metal layer 108b and the lower electrode 110.

[0066] The light emitting device 800 may be manufactured by removing the metal layer 108b only from the portion 108f of the reflective layer 108 in the process of FIG. 4A and etching the metal layer 108b so as to leave the metal layer 108b in the portion 108e of the reflective layer 108.

[0067] Sixth Embodiment The cross-sectional structure of a light-emitting device 1000 according to a sixth embodiment will be described with reference to Fig. 10. The following mainly describes the differences between the light-emitting device 1000 and the light-emitting device 700 according to the fourth embodiment, and redundant descriptions of the differences that may be the same as those of the light-emitting device 700 will be omitted.

[0068] The light-emitting device 1000 does not include an optical adjustment layer 109 between the reflective layer 108 and the lower electrode 110. The lower electrode 110 contacts the entire upper surface of the reflective layer 108 (specifically, the upper surface of the metal layer 108b). In particular, the lower electrode 110 contacts the metal layer 108b on the side opposite to the portion where it contacts the organic layer 112. This reduces the area of ​​the contact portion, and the light-emitting device 1000 can have a wider opening that contributes to light emission compared to the light-emitting device 700. Therefore, when the light-emitting device 1000 is used as a display device, for example, the viewing angle characteristics are improved. The metal layer 108a does not contact the lower electrode 110.

[0069] The lower electrode 110 is a conductive transparent electrode. The thickness of the lower electrode 110 may be different for each pixel 101. For example, the thickness of the lower electrode 110 may be a value corresponding to the resonance wavelength of each pixel 101. Specifically, the thickness of the portion of the lower electrode 110 included in pixel 101r may be greater than the thickness of the portion of the lower electrode 110 included in pixel 101g. The thickness of the portion of the lower electrode 110 included in pixel 101g may be greater than the thickness of the portion of the lower electrode 110 included in pixel 101b. This forms an optical resonance structure in each pixel, and light emission with enhanced brightness at the resonance wavelength is obtained.

[0070] A specific example of a structure for achieving the difference in thickness of the lower electrode 110 as described above will be described. The portion of the lower electrode 110 included in pixel 101r may be composed of three layers of interference films 110a to 110c. The portion of the lower electrode 110 included in pixel 101g may be composed of two layers of interference films 110b and 110c. The portion of the lower electrode 110 included in pixel 101b may be composed of a single layer of interference film 110c. Of the interference films 110a to 110c, the interference film 110a is closest to the semiconductor substrate, and the interference film 110c is farthest from the semiconductor substrate. The interference film 110b included in each of the pixels 101r and 101g may be generated by separating the same interference film into pixel units. The interference film 110c included in each of the pixels 101r, 101g, and 101b may be generated by separating the same interference film into pixel units. The pixel 101g may include the interference films 110a and 110c instead of the interference films 110b and 110c, or may include the interference films 110a and 110b. The pixel 101b may include the interference film 110a instead of the interference film 110c, or may include the interference film 110b.

[0071] Any of the interference films 110a to 110c may be conductive transparent electrode films. The interference films 110a to 110c are formed of a material such as ITO or IZO. Portions of the reflective layer 108 that are included in two adjacent pixels 101 are separated from each other by a pixel separation film 1001. The pixel separation film 1001 is formed of an insulator such as SiO, SiN, or SiON. As in the fourth embodiment, portions of the lower electrode 110 that are included in two adjacent pixels 101 are separated from each other by a separation member 111. The boundary between the pixel separation film 1001 and the reflective layer 108 is covered by the lower electrode 110.

[0072] Not all of the interference films 110a to 110c need to be conductive transparent electrode films, and part of the interference films 110a to 110c may be non-conductive insulating films. For example, if the interference film 110c is a conductive transparent electrode film and part of the interference film 110c is in contact with the reflective layer 108, the interference films 110a and 110b may be non-conductive insulating films. The non-conductive insulating films are made of a material such as SiO.

[0073] Because the metal layer 108b and the lower electrode 110 are in contact with each other, a material may be selected to reduce the difference in work function between the metal layer 108b and the lower electrode 110. This reduces the increase in contact resistance and stabilizes the resistance. For example, the material of the metal layer 108b may be an alloy of Al containing Ni, an alloy containing Cu, an alloy containing Ag, or any combination thereof. Impurities may be mixed into these materials at a ratio of less than 1%.

[0074] Next, a manufacturing method of the light-emitting device 1000 will be described. The manufacturing method is the same as that described with reference to FIG. 3A up to the formation of the reflective layer 108. Then, an insulating film is formed to fill the gaps in the island-shaped reflective layer 108. The insulating film may be formed by a combination of different film formation methods, such as plasma CVD and high-density plasma CVD. In this manner, a film type with good step coverage may be used. The insulating film is then planarized, for example, by chemical mechanical polishing (CMP). This eliminates the step between the portion of the insulating film above the reflective layer 108 and the portion covering the gaps in the reflective layer 108. At this point, the insulating film includes the portion above the reflective layer 108. Then, the portion of the insulating film above the reflective layer 108 is removed by dry etching, wet etching, or the like. This exposes the entire top surface of the reflective layer 108. The remaining portion of the insulating film becomes the pixel isolation film 1001. The top surface of the pixel isolation film 1001 is recessed relative to the top surface of the reflective layer 108. Then, the top surface of the reflective layer 108 is polished by chemical mechanical polishing (CMP). This eliminates steps caused by crystals and grain boundaries formed on the upper surface of the reflective layer 108 during the deposition of the reflective layer 108. As a result, it is possible to improve the reflectivity of the reflective layer 108. For example, by performing CMP under conditions where the polishing rate for the reflective layer 108 (e.g., Al alloy) is high and the polishing rate for the pixel separation film 1001 is low, it is possible to reduce the variation in height between the upper surface of the reflective layer 108 and the upper surface of the pixel separation film 1001.

[0075] Thereafter, a film made of the material for the interference film 110a is formed over the entire surface and patterned so that a portion covering the reflective layer 108 of the pixel 101r remains. The remaining portion becomes the interference film 110a. Thereafter, a film made of the material for the interference film 110b is formed over the entire surface and patterned so that a portion covering the reflective layer 108 of the pixels 101r and 101g remains. The remaining portion becomes the interference film 110b. Thereafter, a film made of the material for the interference film 110c is formed over the entire surface and patterned so that a portion covering the reflective layer 108 of the pixels 101r, 101g, and 101b remains. The remaining portion becomes the interference film 110c. These patternings may be performed on top of the pixel separation film 1001 or within the region of the reflective layer 108. The processes after the formation of the separation member 111 are the same as the manufacturing method described with reference to FIG. 4D .

[0076] Seventh Embodiment The cross-sectional structure of a light-emitting device 1100 according to a seventh embodiment will be described with reference to Fig. 11. The following mainly describes the differences between the light-emitting device 1100 and the light-emitting device 1000 according to the sixth embodiment, and redundant descriptions of the differences that may be the same as those of the light-emitting device 1000 will be omitted.

[0077] The upper surface of the reflective layer 108 of the light-emitting device 1100 (specifically, the upper surface of the metal layer 108b) is recessed toward the semiconductor substrate 102. In other words, with respect to the semiconductor substrate 102, the height of a central portion 1101 of the upper surface of the reflective layer 108 is lower than the height of a peripheral portion 1102 of the upper surface of the reflective layer 108. The recessed upper surface of the reflective layer 108 allows light generated in the organic layer 112 to be concentrated at the light-emitting center of the pixel 101, thereby suppressing light leakage to adjacent pixels. Therefore, for example, when the light-emitting device 1100 is used as a display device, color reproducibility and display efficiency can be improved. In the example of FIG. 11 , the upper surface of the reflective layer 108 is curved, but the upper surface of the reflective layer 108 may include ridges joining surfaces.

[0078] The manufacturing method for light emitting device 1100 differs from the method for light emitting device 1000 in the conditions for CMP on the upper surface of reflective layer 108. Specifically, in the manufacturing method for light emitting device 1100, an insulating film is formed on reflective layer 108 and planarized, and then CMP is performed under conditions such that the upper surface of reflective layer 108 is recessed due to the difference in polishing rate between this insulating film and reflective layer 108.

[0079] Eighth Embodiment The cross-sectional structure of a light-emitting device 1200 according to an eighth embodiment will be described with reference to Fig. 12. The following mainly describes the differences between the light-emitting device 1200 and the light-emitting device 1000 according to the sixth embodiment, and redundant descriptions of the differences between the sixth embodiment and the eighth embodiment may be omitted. The differences between the sixth embodiment and the eighth embodiment may be applied to the seventh embodiment.

[0080] The metal layer 108a of the light-emitting device 1200 contacts the bottom and side surfaces of the metal layer 108b. The metal layer 108a includes a portion not covered by the metal layer 108b. The metal layer 108a contacts the lower electrode 110. Specifically, in the pixel 101r, the metal layer 108a contacts the interference film 110a. In the pixel 101g, the metal layer 108a contacts the interference film 110b. In the pixel 101b, the metal layer 108a contacts the interference film 110c. By including a portion of the metal layer 108a in contact with the lower electrode 110, the materials of the metal layers 108a and 108b can be selected to reduce the contact resistance between the reflective layer 108 and the lower electrode 110. For example, the metal layer 108a may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108b may be formed of at least one of aluminum, an aluminum alloy (e.g., containing nickel), copper, a copper alloy, silver, and a silver alloy. Impurities may be mixed into these materials at a ratio of less than 1%. By reducing the contact resistance between the reflective layer 108 and the lower electrode 110, it is possible to suppress fluctuations in brightness due to voltage drops in the light-emitting element 120 of the light-emitting device 1200.

[0081] 13 , a modified cross-sectional structure of the light-emitting device 1200 according to the eighth embodiment will be described. In this modified example, the metal layer 108a contacts the interference film 110c in each of the pixels 101r, 101g, and 101b. When the lower electrode 110 is made of ITO or IZO, depending on the manufacturing conditions, contact resistance is lower when the lower electrode 110 is connected to titanium or titanium nitride than when the lower electrode 110 is connected to an aluminum alloy. Therefore, the contact resistance can be further reduced by using a configuration such as this modified example.

[0082] Ninth Embodiment The cross-sectional structure of a light-emitting device 1400 according to a ninth embodiment will be described with reference to Fig. 14. The following mainly describes the differences between the light-emitting device 1400 and the light-emitting device 1000 according to the sixth embodiment, and redundant descriptions of the differences between the sixth embodiment and the ninth embodiment may be omitted for the same aspects as the light-emitting device 1000. The differences between the sixth embodiment and the ninth embodiment may be applied to either the seventh embodiment or the eighth embodiment.

[0083] The reflective layer 108 of the light-emitting device 1400 further includes a metal layer 108g between the metal layer 108a and the metal layer 108b. Of the three metal layers 108a, 108b, and 108g, the metal layer 108a is closest to the semiconductor substrate 102, and the metal layer 108b is farthest from the semiconductor substrate 102. The resistivity of the material of the metal layer 108g may be higher than the resistivity of either of the materials of the metal layers 108a and 108b. The reflectivity of the material of the metal layer 108g may be higher than the reflectivity of either of the materials of the metal layers 108a and 108b. For example, the metal layers 108a and 108b may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108g may be formed of at least one of aluminum, an aluminum alloy (e.g., containing nickel), copper, a copper alloy, silver, and a silver alloy. These materials may contain impurities at a ratio of less than 1%.

[0084] The metal layer 108b is thinner than both the metal layers 108a and 108g. For example, the thickness of the metal layer 108b may be 8 nm or less. Because the metal layer 108b contacts the lower electrode 110, the contact resistance between the reflective layer 108 and the lower electrode 110 can be reduced for the same reason as in the eighth embodiment. The metal layer 108b has a higher surface free energy than the metal layer 108g. This improves the surface flatness, which is poor in wettability during deposition of the interference film 110a. The improved flatness suppresses the shift in the resonant wavelength in the optical resonant structure, resulting in light emission with enhanced brightness.

[0085] <Tenth Embodiment> The cross-sectional structure of a light-emitting device 1500 according to a tenth embodiment will be described with reference to Fig. 15. The following mainly describes the differences between the light-emitting device 1500 and the light-emitting device 1000 according to the sixth embodiment, and redundant descriptions of the differences between the sixth embodiment and the tenth embodiment may be omitted. The differences between the sixth embodiment and the tenth embodiment may be applied to any of the seventh to ninth embodiments.

[0086] In the light-emitting device 1500, portions of the reflective layer 108 included in two adjacent pixels 101 are insulated from each other by pixel isolation films 1501 and 1502. The material of the pixel isolation films 1501 and 1502 may be SiO, SiN, SiON, or any combination thereof. The pixel isolation film 1501 covers the side surfaces of the reflective layer 108 and the lower surface and side surfaces of the pixel isolation film 1502. The reflective layer 108 and the pixel isolation film 1502 are separated by the pixel isolation film 1501. The interlayer insulating layer 105 and the pixel isolation film 1502 are separated by the pixel isolation film 1501.

[0087] The following describes a case where the pixel isolation film 1501 is a silicon oxide film and the pixel isolation film 1502 is a silicon nitride film. In this case, the selectivity with respect to the underlayer increases when the interference films 110a to 110c are patterned by dry etching or wet etching, thereby reducing the step of the underlayer caused by excessive etching of the pixel isolation film 1502. This prevents the organic layer 112 from being thinned at the step portion of the underlayer when it is formed, thereby suppressing leakage current between the lower electrode 110 and the upper electrode 113. This suppresses brightness fluctuations in low-brightness areas of the light-emitting device 1500. Because the pixel isolation film 1501 is made of SiO, which has a larger band gap than SiN, leakage current flowing between two portions of the reflective layer 108 included in adjacent pixels 101 can be reduced.

[0088] <Modifications of the Above-Described Embodiments> In the above-described embodiments, there are three wiring layers from the transistors formed on the semiconductor substrate 102 to the reflective layer 108, but the number of wiring layers is not limited to this. For example, the number of wiring layers may be four, five, or more. The wiring material may be, for example, tungsten, copper, aluminum, or the like. When copper is used as the wiring material, a SiC layer may be provided to reduce copper diffusion. The SiC layer may be doped with nitrogen. A capacitance element may be provided in the wiring layer. The capacitance element may have, for example, an MIM structure.

[0089] [Configuration of Organic Light-Emitting Element] The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0090] [Substrate] Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. Furthermore, the substrate may be provided with a switching element such as a transistor and wiring, and an insulating layer thereon. The insulating layer may be made of any material as long as it can form a contact hole so that wiring can be formed between the first electrode and the insulating layer, and can ensure insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0091] [Electrodes] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0092] The anode material should preferably have as large a work function as possible. Examples of such materials include simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0093] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0094] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. When used as a transparent electrode, transparent conductive oxide layers such as indium tin oxide (ITO) and indium zinc oxide can be used, but are not limited to these. Photolithography technology can be used to form the electrode.

[0095] On the other hand, materials with a low work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and metals such as aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials can be used alone or in combination. The cathode can have either a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not critical as long as silver aggregation can be reduced. For example, the silver:other metal ratio can be 1:1, 3:1, or the like.

[0096] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but DC and AC sputtering methods are more preferable because they provide good film coverage and make it easier to reduce resistance.

[0097] [Pixel Separation Layer] The pixel separation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using a chemical vapor deposition (CVD) method. In order to increase the in-plane resistance of the organic compound layer, it is preferable that the thickness of the organic compound layer, particularly the hole transport layer, is thin on the sidewall of the pixel separation layer. Specifically, the thickness of the sidewall can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during vapor deposition.

[0098] On the other hand, it is preferable to adjust the sidewall taper angle and film thickness of the pixel separation layer to such an extent that voids are not formed in the protective layer formed thereon. Since voids are not formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0099] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that sufficient reduction is possible if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The thickness of the pixel separation layer is preferably 10 nm or more and 150 nm or less. Similar effects can also be achieved even if the pixel electrode is composed only of a pixel electrode without a pixel separation layer. However, in this case, it is preferable that the thickness of the pixel electrode be half or less than that of the organic layer, or that the edge of the pixel electrode be forward tapered at less than 60 degrees, in order to reduce short circuits in the organic light-emitting element.

[0100] [Organic Compound Layer] The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. For example, the organic compound layer may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0101] When the device has a plurality of light-emitting layers, a charge generation portion may be provided between the first light-emitting layer and the second light-emitting layer. The charge generation portion may include an organic compound having a lowest unoccupied molecular orbital energy (LUMO) of −5.0 eV or less. The same applies when the charge generation portion is provided between the second light-emitting layer and the third light-emitting layer.

[0102] [Protective Layer] A protective layer may be provided on the second electrode. For example, by adhering glass with a moisture absorbent to the second electrode, the intrusion of water and other substances into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other substances into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride film may be formed by CVD to serve as a protective layer. A protective layer may be provided using atomic layer deposition (ALD) after the CVD film formation. The material of the film formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed on the film formed by ALD by CVD. The film formed by ALD may have a thickness smaller than that of the film formed by CVD. Specifically, the thickness may be 50% or less, or even 10% or less.

[0103] [Color Filter] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on a separate substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using photolithography technology. The color filter may be made of a polymer.

[0104] [Planarization Layer] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. It may also be called a material resin layer without limiting its purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but is preferably a high molecular weight.

[0105] The planarizing layer may be provided above or below the color filter, and may be made of the same or different materials, such as polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0106] [Microlens] The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The purpose of the microlens may be to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0107] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0108] The microlens has a first surface having a convex portion and a second surface opposite the first surface. It is preferable that the second surface is disposed closer to the functional layer than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. When the functional layer is an organic layer, it is preferable to avoid processes that result in high temperatures during the manufacturing process. Furthermore, when the second surface is disposed closer to the functional layer than the first surface, it is preferable that the glass transition temperatures of all organic compounds constituting the organic layer are 100°C or higher, and more preferably 130°C or higher.

[0109] [Counter Substrate] An counter substrate may be provided on the planarization layer. The counter substrate is called a counter substrate because it is provided at a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the counter substrate may be a second substrate.

[0110] [Organic Layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting device according to one embodiment of the present invention are formed by the method described below.

[0111] The organic compound layer constituting the organic light-emitting device according to one embodiment of the present invention can be formed by a dry process such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively, instead of the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (for example, spin coating, dipping, casting, LB method, inkjet method, etc.).

[0112] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining with an appropriate binder resin.

[0113] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0114] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, if necessary.

[0115] [Pixel Circuit] The light-emitting device may have a pixel circuit connected to a light-emitting element. The pixel circuit may be an active matrix type that controls the light emission of a first light-emitting element and a second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the light-emission luminance of the light-emitting element, a transistor that controls the light-emission timing, a capacitor that holds the gate voltage of the transistor that controls the light-emission luminance, and a transistor for connecting to GND without going through the light-emitting element.

[0116] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0117] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured by the so-called Vg-Ig characteristics.

[0118] The transistors that make up the pixel circuit are transistors connected to a light-emitting element, such as the first light-emitting element.

[0119] [Pixels] The organic light emitting device has a plurality of pixels. Each pixel has sub-pixels that emit different colors. The sub-pixels may emit, for example, RGB colors.

[0120] The pixel emits light from an area called the pixel aperture. This area is the same as the first area. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0121] The distance between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0122] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0123] [Uses of the organic light-emitting device according to one embodiment of the present invention] The organic light-emitting device according to one embodiment of the present invention can be used as a component of a display device or a lighting device. Other uses include an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, and a light-emitting device having a white light source and a color filter.

[0124] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0125] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0126] 16 is a schematic diagram illustrating an example of a display device according to this embodiment. The display device 1600 may include a touch panel 1603, a display panel 1605, a frame 1606, a circuit board 1607, and a battery 1608 between an upper cover 1601 and a lower cover 1609. The touch panel 1603 and the display panel 1605 are connected to flexible printed circuits FPCs 1602 and 1604. Transistors are printed on the circuit board 1607. The battery 1608 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.

[0127] The display device according to this embodiment may have color filters having red, green, and blue colors, which may be arranged in a delta arrangement.

[0128] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0129] The display device according to this embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0130] 17A is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1700 may include a viewfinder 1701, a rear display 1702, an operation unit 1703, and a housing 1704. The viewfinder 1701 may include a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0131] Since the optimum timing for capturing an image is very short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0132] The imaging device 1700 has an optical section (not shown). The optical section has multiple lenses, which form an image on an imaging element housed in a housing 1704. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may also be called a photoelectric conversion device. Instead of sequentially capturing images, the photoelectric conversion device may include an imaging method that detects the difference from the previous image, or a method of cutting out an image from a constantly recorded image, etc.

[0133] FIG. 17B is a schematic diagram illustrating an example of an electronic device according to this embodiment. The electronic device 1750 has a display unit 1751, an operation unit 1752, and a housing 1753. The housing 1753 may include a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1752 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint to perform operations such as unlocking. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.

[0134] 18A and 18B are schematic diagrams illustrating an example of a display device according to this embodiment. Fig. 18A illustrates a display device such as a television monitor or a PC monitor. The display device 1800 has a frame 1801 and a display unit 1802. The light-emitting device according to this embodiment may be used in the display unit 1802.

[0135] The display device has a frame 1801 and a base 1803 that supports a display unit 1802. The base 1803 is not limited to the form shown in Fig. 18A. The lower side of the frame 1801 may also serve as the base.

[0136] The frame 1801 and the display unit 1802 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0137] FIG. 18B is a schematic diagram illustrating another example of a display device according to this embodiment. The display device 1850 in FIG. 18B is configured to be bendable and is a so-called foldable display device. The display device 1850 has a first display portion 1851, a second display portion 1852, a housing 1853, and a bending point 1854. The first display portion 1851 and the second display portion 1852 may include the light-emitting device according to this embodiment. The first display portion 1851 and the second display portion 1852 may be a single display device without any joints. The first display portion 1851 and the second display portion 1852 can be separated by the bending point. The first display portion 1851 and the second display portion 1852 may display different images, or the first and second display portions may display a single image.

[0138] 19A is a schematic diagram showing an example of an illumination device according to this embodiment. The illumination device 1900 may include a housing 1901, a light source 1902, a circuit board 1903, an optical film 1904, and a light diffusion unit 1905. The light source may include an organic light-emitting element according to this embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse light from the light source, such as for illumination, and deliver the light over a wide area. The optical filter and the light diffusion unit may be provided on the light emission side of the illumination device. If necessary, a cover may be provided on the outermost part.

[0139] The lighting device is, for example, a device for illuminating a room. The lighting device may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit for dimming them. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit for converting AC voltage to DC voltage. Furthermore, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device may have a color filter.

[0140] The lighting device according to this embodiment may also include a heat dissipation unit, which dissipates heat from within the device to the outside, and may be made of a material such as a metal with a high specific heat capacity or liquid silicon.

[0141] 19B is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of a lighting device. The automobile 1950 has tail lamps 1951, and may be configured to turn on the tail lamps when braking or the like is performed.

[0142] The tail lamp 1951 may include the organic light-emitting element according to this embodiment. The tail lamp may include a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but it is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0143] The automobile 1950 may have a body 1953 and a window 1952 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent materials.

[0144] The moving body according to this embodiment has a driving unit such as an engine or a motor, and moving units such as wheels, propellers, and tires. For example, the moving body may be an automobile, a ship, an aircraft, a drone, a bicycle, a railroad car, or the like. The moving body may have a body and a lamp provided on the body. The lamp may emit light to indicate the position of the body. The lamp has the organic light-emitting element according to this embodiment.

[0145] 20A and 20B , application examples of the display devices according to the above-described embodiments will be described. The display device can be applied to systems that can be worn as wearable devices, such as smart glasses, HMDs, and smart contact lenses. The image capturing and display device used in such application examples includes an image capturing device capable of photoelectrically converting visible light and a display device capable of emitting visible light.

[0146] 20A illustrates glasses 2000 (smart glasses) according to one application example. An imaging device 2002, such as a CMOS sensor or a SPAD, is provided on the front side of a lens 2001 of the glasses 2000. Furthermore, a display device according to any of the above-described embodiments is provided on the back side of the lens 2001.

[0147] The glasses 2000 further include a control device 2003. The control device 2003 functions as a power source that supplies power to the image capture device 2002 and the display device according to each embodiment. The control device 2003 also controls the operations of the image capture device 2002 and the display device. The lens 2001 is formed with an optical system for focusing light onto the image capture device 2002.

[0148] FIG. 20B illustrates glasses 2050 (smart glasses) according to one application example. The glasses 2050 include a control device 2052. The control device 2052 is equipped with an imaging device corresponding to the imaging device 2002 and a display device. A lens 2051 is formed with an optical system for projecting light emitted by the display device within the control device 2052, and an image is projected onto the lens 2051. The control device 2052 functions as a power source that supplies power to the imaging device and the display device and controls the operation of the imaging device and the display device. The control device may include a gaze detection unit that detects the wearer's gaze. Infrared light may be used for gaze detection. The infrared light emitter emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit with a light receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. A reduction unit that reduces light from the infrared light emitter to the display unit in a planar view reduces degradation of image quality.

[0149] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using an image of the eyeball. One example is a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea.

[0150] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0151] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control the image displayed on the display device based on information about the user's line of sight from the imaging device.

[0152] Specifically, the display device determines a first display area where the user gazes and a second display area other than the first display area based on the line-of-sight information. The first display area and the second display area may be determined by a control device of the display device, or may be determined by an external control device and received. In the display areas of the display device, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than that of the first display area.

[0153] The display area may include a first display area and a second display area different from the first display area, and a high-priority area may be determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0154] Note that AI may be used to determine the first display area and the area with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0155] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0156] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

[0157] This application claims priority based on Japanese Patent Application No. 2023-197590 filed on November 21, 2023 and Japanese Patent Application No. 2024-143349 filed on August 23, 2024, the entire contents of which are incorporated herein by reference.

Claims

1. A light-emitting device comprising: a substrate; an interlayer insulating layer located on the substrate and having a conductive member embedded therein; a laminated structure located on the interlayer insulating layer and composed of a plurality of metal layers stacked on top of each other; and a light-emitting element located on the laminated structure, wherein the plurality of metal layers include a first metal layer including a portion in contact with the conductive member, and a second metal layer located on the first metal layer, wherein the second metal layer has a reflective surface that reflects light from the light-emitting element toward the light-emitting element, the resistivity of the material of the first metal layer being higher than the resistivity of the material of the second metal layer, and the reflectivity of the material of the second metal layer being higher than the reflectivity of the material of the first metal layer.

2. The light emitting device according to claim 1, further comprising a light transmissive layer between the laminated structure and the light emitting element.

3. The light-emitting device according to claim 2, wherein the light-emitting element includes a lower electrode and an upper electrode located on the lower electrode, and a portion of the lower electrode penetrates the light-transmitting layer and is in contact with the laminated structure.

4. The light emitting device according to claim 3, wherein a portion of said lower electrode further penetrates said second metal layer.

5. The light emitting device of claim 4, wherein a portion of said bottom electrode is in contact with said first metal layer.

6. The light-emitting device according to claim 2, wherein the light-emitting element includes a lower electrode and an upper electrode located on the lower electrode, and the distance between the substrate and a portion of the lower electrode closest to the substrate is shorter than the distance between the substrate and the reflective surface.

7. The light-emitting device according to claim 1, wherein the light-emitting element includes a lower electrode and an upper electrode located on the lower electrode, and the distance between the substrate and a portion of the lower electrode closest to the substrate is the same as the distance between the substrate and the reflective surface.

8. A light-emitting device according to any one of claims 1 to 7, wherein the first metal layer is formed of at least one of titanium, titanium nitride, and a titanium alloy, and the second metal layer is formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy.

9. A light emitting device according to any one of claims 1 to 8, wherein the first metal layer is thinner than the second metal layer.

10. The light-emitting device according to any one of claims 1 to 9, wherein the plurality of metal layers further includes: a third metal layer located on the first metal layer; and a fourth metal layer located on the third metal layer and below the second metal layer.

11. The light emitting device of claim 10, wherein each of the first metal layer and the fourth metal layer is formed of at least one of titanium, titanium nitride, and a titanium alloy, and each of the second metal layer and the third metal layer is formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy.

12. The light emitting device according to claim 10 or 11, wherein the third metal layer is thicker than both the first metal layer and the fourth metal layer.

13. The light emitting device according to claim 10, wherein the second metal layer is thinner than the third metal layer.

14. The light emitting device according to claim 10, wherein the second metal layer has a thickness of 10 nm or more and 100 nm or less.

15. The light emitting device according to any one of claims 1 to 14, wherein the thickness of the laminated structure is 200 nm or more and 2000 nm or less.

16. The light-emitting device according to any one of claims 1 to 15, further comprising: a lower electrode located on the laminated structure; an organic layer located on the lower electrode; and an upper electrode located on the organic layer, wherein the light-emitting element is formed by a portion of the lower electrode, a portion of the organic layer, and a portion of the upper electrode.

17. The light-emitting device according to claim 16, wherein the lower electrode includes a contact portion in contact with the organic layer and a non-contact portion separated from the organic layer by a separation member.

18. The light-emitting device according to claim 17, wherein the lower electrode has a plurality of steps between the contact portion and a portion in contact with the laminated structure.

19. The light emitting device according to any one of claims 1 to 18, wherein the portion of the laminate structure that is in contact with the conductive member is electrically connected to the reflective surface.

20. The light emitting device according to any one of claims 1 to 19, wherein the portion of the laminate structure that is in contact with the conductive member is electrically isolated from the reflective surface.

21. The light emitting device according to any one of claims 1 to 20, wherein the second metal layer is an uppermost layer of the plurality of metal layers.

22. The light-emitting device of claim 1, further comprising: a lower electrode located on the laminated structure; an organic layer located on the lower electrode; and an upper electrode located on the organic layer, wherein the light-emitting element is formed by a portion of the lower electrode, a portion of the organic layer, and a portion of the upper electrode, and the lower electrode is in contact with the second metal layer on the side opposite to the portion in contact with the organic layer.

23. The light emitting device of claim 22, wherein the first metal layer does not contact the bottom electrode.

24. A light emitting device according to claim 22 or 23, wherein an upper surface of the second metal layer is recessed towards the substrate.

25. The light-emitting device according to claim 22, wherein the first metal layer is in contact with a side surface of the second metal layer and with the lower electrode.

26. The light emitting device of any one of claims 22 to 25, wherein the plurality of metal layers further includes a fifth metal layer between the first metal layer and the second metal layer, and the second metal layer is thinner than both the first metal layer and the fifth metal layer.

27. The light emitting device of claim 26, wherein the second metal layer has a thickness of 8 nm or less.

28. A light-emitting device as described in any one of claims 22 to 27, wherein the plurality of metal layers further includes a fifth metal layer between the first metal layer and the second metal layer, the resistivity of the material of the fifth metal layer is higher than the resistivity of both the materials of the first metal layer and the second metal layer, and the reflectivity of the material of the fifth metal layer is higher than the reflectivity of both the materials of the first metal layer and the second metal layer.

29. The light emitting device according to any one of claims 22 to 27, wherein the laminated structure is separated into a plurality of portions, and the light emitting device further comprises an isolation film that insulates the plurality of portions from each other.

30. The light-emitting device according to claim 29, wherein the lower electrode covers the boundary between the laminated structure and the isolation film.

31. The light-emitting device according to claim 29 or 30, wherein the isolation film is composed of a silicon oxide film and a silicon nitride film stacked together.

32. A display device comprising a light-emitting device according to any one of claims 1 to 31 and an element connected to said light-emitting device.

33. A photoelectric conversion device comprising an optical section having a plurality of lenses, an imaging element that receives light that has passed through the optical section, and a display section that displays an image, wherein the display section displays an image captured by the imaging element, and further comprising a light-emitting device according to any one of claims 1 to 31.

34. An electronic device comprising: a housing in which a display unit is provided; and a communication unit provided in the housing and configured to communicate with the outside, the display unit comprising a light-emitting device according to any one of claims 1 to 31.

35. An illumination device having a light source and at least one of a light diffusion section and an optical film, wherein the light source has a light-emitting device according to any one of claims 1 to 31.

36. A moving object having a body and a lighting device provided on the body, the lighting device having a light-emitting device according to any one of claims 1 to 31.

Images