Laser-based chuck heating apparatus and chuck heating method

Abstract

Disclosed are a laser-based chuck heating apparatus and chuck heating method, wherein a chuck can be efficiently and effectively heated using a laser. The laser-based chuck heating apparatus according to an embodiment of the present invention includes: a support chuck provided to support a substrate and having a light absorbing part including a light absorbing material for absorbing laser light; and a chuck temperature control apparatus for irradiating the light absorbing part with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material, such that the light energy of the laser is absorbed into the light absorbing material, thereby controlling the temperature of the support chuck.

Description

Laser-based chuck heating device and chuck heating method

[0001] The present invention relates to a chuck heating device and a chuck heating method, and more particularly, to a chuck heating device and a chuck heating method that heat a chuck using a laser.

[0002] Semiconductor integrated circuits (ICs) are typically very small, thin silicon chips, but they are comprised of various electronic components. To create a single semiconductor chip, they undergo various manufacturing processes, including photolithography, etching, deposition, reflow, and packaging. Semiconductor manufacturing requires temperature control of the substrate, and heating the chuck that supports the substrate is typically used.

[0003] Conventional chuck heating methods achieve temperature control largely through two heat transfer methods. The first method involves burying a fluid-flowing tube within the chuck, controlling the flow rate and temperature of the fluid. This method utilizes an external heat exchanger, or other device, to control the chuck temperature.

[0004] The second method involves embedding a heating element, which acts as a heat source, within the chuck to control temperature. In this case, a pipe through which fluid flows is embedded, and power is applied to the heating element to heat it. Cooling is controlled by controlling the fluid flow rate. This achieves thermal equilibrium between heating and cooling, thereby controlling the chuck's temperature.

[0005] Conventional techniques for controlling chuck temperature have difficulty rapidly controlling the chuck temperature, so methods that maintain the chuck temperature at an appropriate level are commonly used. However, when temperature fluctuations are required according to the process recipe, this method of maintaining the temperature is limited.

[0006] The present invention provides a laser-based chuck heating device and chuck heating method capable of efficiently and effectively heating a chuck using a laser.

[0007] In addition, the present invention provides a laser-based chuck heating device and chuck heating method capable of uniformly heating a chuck using a laser.

[0008] A laser-based chuck heating device according to an embodiment of the present invention comprises: a chuck having a light absorbing portion that is provided to support a substrate and includes a light absorbing material that absorbs laser light; and a chuck temperature control device that controls the temperature of the chuck by irradiating the light absorbing portion with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material and absorbing the light energy of the laser into the light absorbing material.

[0009] The wavelength of the above laser can be set according to a maximum light absorption rate of 60% or more of the light-absorbing material within a wavelength range of 700 nm to 1500 nm.

[0010] The above support may include an upper layer on which the substrate is supported, and a lower layer provided below the upper layer and made of the light absorbing portion to absorb the light energy of the laser.

[0011] The above chuck temperature control device can irradiate the laser to the light absorbing portion provided in the lower layer at the lower portion of the support chuck.

[0012] A laser-based chuck heating device according to an embodiment of the present invention may further include an intermediate layer made of a metal material provided between the upper layer and the lower layer and transmitting heat from the lower layer to the upper layer.

[0013] The above light absorbing portion may include a plurality of light absorbing elements provided in a plurality of regions partitioned at the lower portion of the support.

[0014] At least two of the plurality of light absorbing elements may have wavelengths of lasers incident on the at least two light absorbing elements set to be different.

[0015] A laser-based chuck heating device according to an embodiment of the present invention may further include a substrate temperature control device that controls the temperature of the substrate by irradiating the substrate with a substrate temperature control laser having a wavelength set according to the maximum light absorption rate of the substrate and causing the substrate to absorb the light energy of the substrate temperature control laser.

[0016] A laser-based chuck heating device according to an embodiment of the present invention may further include a laser wavelength determining unit that generates an optical absorption spectrum indicating an optical absorption rate according to a wavelength of laser light for the optical absorbing material, and determines a wavelength of the laser based on an optical absorption rate peak wavelength indicating the maximum optical absorption rate in the optical absorption spectrum.

[0017] The above-described chuck temperature control device may include a wavelength-tunable laser. The wavelength-tunable laser may output a laser by adjusting its wavelength according to a target temperature for the support chuck.

[0018] A laser-based chuck heating device according to an embodiment of the present invention may further include a light absorption control unit that controls the light energy of the laser absorbed by the light absorption unit and the area of ​​the light absorption region by adjusting the distance between the support chuck and the laser generating unit of the chuck temperature control unit according to a target temperature for the support chuck and an area of ​​a region in which a temperature change is required among the support chucks.

[0019] A laser-based chuck heating device according to an embodiment of the present invention may further include a laser output direction control unit that controls the direction of the laser so that the laser is irradiated to an area of ​​the chuck requiring temperature control by the laser according to the temperature distribution of the chuck.

[0020] Based on the irradiation direction of the above laser, the thickness of the light absorbing portion can be designed to have the maximum light absorption rate according to the light absorption characteristics of the light absorbing material.

[0021] The above light absorbing portion may be designed so that the thickness gradually decreases or increases from the central region of the laser irradiated onto the light absorbing portion to the peripheral region of the central region.

[0022] According to an embodiment of the present invention, a substrate processing device is provided, including the laser-based chuck heating device and a processing unit that performs processing on the substrate within a chamber.

[0023] The substrate processing device according to an embodiment of the present invention may further include a laser control unit that controls the wavelength and intensity of a laser irradiated from the laser-based chuck heating device according to a process recipe of the processing unit.

[0024] A laser-based chuck heating method according to an embodiment of the present invention comprises the steps of: preparing a support chuck having a light absorbing portion including a light absorbing material that absorbs laser light, the support chuck being arranged to support a substrate; and controlling the temperature of the support chuck by irradiating the light absorbing portion with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material using a chuck temperature control device, thereby causing the light energy of the laser to be absorbed by the light absorbing material.

[0025] The above light absorbing portion may include a plurality of light absorbing elements provided in a plurality of regions partitioned at the lower portion of the support.

[0026] At least two of the plurality of light absorbing elements may have wavelengths of lasers incident on the at least two light absorbing elements set to be different.

[0027] A laser-based chuck heating method according to an embodiment of the present invention may further include a step of controlling the temperature of the substrate by irradiating the substrate with a substrate temperature control laser having a wavelength set according to the maximum light absorption rate of the substrate by a substrate temperature control device, thereby causing the substrate to absorb the light energy of the substrate temperature control laser.

[0028] A laser-based chuck heating method according to an embodiment of the present invention may further include a step of generating an optical absorption spectrum representing optical absorption rate according to a wavelength of laser light for the optical absorbing material by a laser wavelength determining unit, and determining the wavelength of the laser based on an optical absorption rate peak wavelength representing the maximum optical absorption rate in the optical absorption spectrum.

[0029] A laser-based chuck heating method according to an embodiment of the present invention may further include a step of controlling, by a laser control unit, the wavelength and intensity of the laser irradiated from the laser-based chuck heating device according to a process recipe of the processing unit.

[0030] According to an embodiment of the present invention, a laser-based chuck heating device and chuck heating method capable of efficiently and effectively heating a chuck using a laser are provided.

[0031] In addition, according to an embodiment of the present invention, a laser-based chuck heating device and chuck heating method capable of uniformly heating a chuck using a laser are provided.

[0032] FIG. 1 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0033] FIG. 2 is a conceptual diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0034] FIG. 3 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0035] FIGS. 4 and 5 are cross-sectional views schematically illustrating a laser-based chuck heating device according to other embodiments of the present invention.

[0036] FIG. 6 is a conceptual diagram illustrating a laser-based chuck heating device according to another embodiment of the present invention.

[0037] Figure 7 is a flowchart of a laser-based chuck heating method according to an embodiment of the present invention.

[0038] Figure 8 is a flowchart specifically illustrating step S20 of Figure 7.

[0039] Figure 9 is a diagram showing the optical properties (absorption, reflection, and transmission spectra) of Si material according to wavelength.

[0040] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes of elements in the drawings have been exaggerated for clarity.

[0041] In order to clearly solve the problem to be solved by the present invention, the composition of the invention is described in detail with reference to the attached drawings based on a preferred embodiment of the present invention, and when assigning reference numbers to components in the drawings, the same reference numbers are assigned to the same components even if they are in different drawings, and it is made clear in advance that components in other drawings may be cited when necessary when describing the drawings.

[0042] FIG. 1 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention. Referring to FIG. 1, a laser-based chuck heating device (10) according to an embodiment of the present invention includes a support chuck (30) having a light absorbing portion (20), and a chuck temperature control device (40) that irradiates laser light (L) to the light absorbing portion (20) of the support chuck (30) to control the temperature of the support chuck (30) and the substrate (W).

[0043] The support (30) is provided to support a substrate (W) that is a target for processing by a substrate processing device. The substrate processing device may be, for example, a device that performs a plasma process, a package process, a reflow process, an etching process, a deposition process, a photo process, or a heat treatment process, but is not limited thereto. The substrate (W) may be, for example, provided as a semiconductor wafer, a mask, a glass substrate, or a liquid crystal display (LCD) panel, but is not limited thereto.

[0044] The light absorbing portion (20) provided on the support chuck (30) includes a light absorbing material that absorbs laser light (L) irradiated by the chuck temperature control device (40). The chuck temperature control device (40) can irradiate the light absorbing portion (20) with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material included in the light absorbing portion (20) of the support chuck (30). The chuck temperature control device (40) can control the temperature of the support chuck (30) by absorbing the light energy of the laser into the light absorbing material of the light absorbing portion (20).

[0045] The support chuck (30) may include an upper layer (31) on which a substrate (W) is supported, a lower layer (33) provided below the upper layer (31), and an intermediate layer (32) provided between the upper layer (31) and the lower layer (33). The lower layer (33) may include a light absorbing portion (20) to absorb light energy of a laser irradiated by a chuck temperature control device (40). The intermediate layer (32) may be formed of a metal material layer that transfers heat from the lower layer (33) to the upper layer (31).

[0046] In an embodiment, the chuck temperature control device (40) can irradiate a laser to a light absorbing portion (20) provided in a lower layer (33) at the lower portion of the support chuck (30). The wavelength of the laser light (L) irradiated by the chuck temperature control device (40) can be set according to a maximum light absorption rate of 60% or more of the light absorbing material within a wavelength range of 700 nm to 1500 nm.

[0047] FIG. 2 is a conceptual diagram of a laser-based chuck heating device according to an embodiment of the present invention. Referring to FIGS. 1 and 2, the light absorbing portion (20) may include a plurality of light absorbing elements (21) provided in each of a plurality of regions partitioned at the lower portion of the support chuck (30). The wavelengths of laser light incident on the plurality of light absorbing elements (21) may all be set to be the same, but, if necessary, at least two of the plurality of light absorbing elements (21) may have the wavelengths of laser light incident on them set to be different.

[0048] In an embodiment, a light absorbing element (21) provided in a central region of a support member (30) may receive laser light having a higher or lower wavelength than a light absorbing element (21) provided in a peripheral region of the support member (30). By setting the wavelengths of laser light incident on a plurality of light absorbing elements (21) differently (individually), thermal imbalance depending on the direction of incidence of the laser light and the positional relationship of the light absorbing elements (21) can be minimized.

[0049] FIG. 3 is a configuration diagram of a laser-based chuck heating device according to an embodiment of the present invention. Referring to FIGS. 1 to 3, a laser-based chuck heating device (10) according to an embodiment of the present invention may include a substrate temperature control device (50), a laser wavelength determination unit (60), a light absorption control unit (70), a laser output direction control unit (80), and a laser control unit (90).

[0050] The substrate temperature control device (50), the laser wavelength determination unit (60), the light absorption control unit (70), the laser output direction control unit (80), and the laser control unit (90) can perform a process for temperature control of the support shaft by executing a program (algorithm) stored in the memory by a control unit (100) including at least one processor.

[0051] The substrate temperature control device (50) can control the temperature of the substrate (W) by irradiating the substrate (W) with a substrate temperature control laser having a wavelength set according to the maximum light absorption rate of the substrate (W) and causing the substrate (W) to absorb the light energy of the substrate temperature control laser. The substrate temperature control device (50) can control the intensity and / or wavelength / frequency, etc. of the substrate temperature control laser according to the temperature of the substrate (W) and / or the support (30).

[0052] The laser wavelength determination unit (60) can generate an optical absorption spectrum indicating the optical absorption rate according to the wavelength of the laser light for a light-absorbing material. The laser wavelength determination unit (60) can determine the wavelength of the laser based on the optical absorption rate peak wavelength indicating the maximum optical absorption rate in the optical absorption spectrum.

[0053] In one embodiment of the present invention, the chuck temperature control device (40) may include a wavelength-tunable laser (variable frequency laser). The wavelength-tunable laser may output a laser by adjusting its wavelength according to the target temperature for the support chuck (30).

[0054] The light absorption control unit (70) can control the light energy of the laser absorbed by the light absorption unit (20) and the area of ​​the light absorption region by adjusting the distance between the support chuck (30) and the laser generating device of the chuck temperature control device (40) according to the target temperature for the support chuck (30) and the area of ​​the region in which a temperature change is required among the support chuck (30).

[0055] The light absorption control unit (70) can control the light energy density of the laser absorbed in the light absorption unit (20) of the support chuck (30) by controlling the distance between the laser generating device of the chuck temperature control device (40) and the support chuck (30), for example, by controlling the distance between the laser generating device and the support chuck (30) by means of an elevator driver. The means for controlling the distance of the laser generating device can include, for example, a driving cylinder or a driving motor.

[0056] The laser output direction control unit (80) can control the direction of the laser so that the laser is irradiated to an area of ​​the support chuck (30) that requires temperature control by the laser according to the temperature distribution of the support chuck (30). The laser output direction control unit (80) can include a means for controlling the direction of the laser generating device of the chuck temperature control device (40), for example, a driving cylinder or a driving motor.

[0057] The laser control unit (90) can control the wavelength and intensity of the laser irradiated from the laser-based chuck heating device according to the process recipe of the processing unit. Based on the direction of the laser irradiation, the thickness of the light absorbing unit (20) can be designed to have the maximum light absorption rate according to the light absorption characteristics of the light absorbing material.

[0058] Figures 4 and 5 are cross-sectional views schematically illustrating a laser-based chuck heating device according to other embodiments of the present invention. Referring to Figures 4 and 5, the light absorbing portion (20) may be designed such that the thickness gradually decreases or increases from the central region of the laser irradiated onto the light absorbing portion (20) to the peripheral region of the central region.

[0059] As the thickness of the light-absorbing material increases, its light absorption rate decreases exponentially. By designing the thickness of the light-absorbing material to gradually decrease or increase from the central region to the peripheral region, the support can be heated uniformly, or, if necessary, heat can be concentrated in specific areas of the support.

[0060] A substrate processing device according to an embodiment of the present invention may include the above-described laser-based chuck heating device (10) and a processing unit that performs processing on a substrate (W) within a chamber (not shown). The chamber has a processing space within which the substrate (W) is processed. Various components required for processing the substrate (W) may be provided within the chamber depending on the type of substrate processing process performed in the substrate processing device.

[0061] For example, when a substrate processing device is provided as a device for processing a substrate using plasma, a configuration for providing process gas for plasma generation to a processing space of a chamber, a configuration for converting the process gas into plasma (e.g., a high-frequency generator, etc.), a component for exhausting the process gas and plasma inside the processing space, etc. may be provided.

[0062] The support chuck (30) corresponds to a support provided to support the substrate (W), and may be provided as an electrostatic chuck for supporting the lower surface (bottom surface) of the substrate (W), but is not limited thereto. A guide ring (or edge ring) may be provided around the support chuck (30) to guide the substrate (W). The support chuck (30) may be insulated by an insulator.

[0063] An exhaust ring may be provided within the chamber for uniform exhaust of process gas. The processing unit is configured to perform the substrate processing process described above on the substrate (W), and may include, for example, a high-frequency generator for plasma generation and control, a high-frequency controller, and a heater for heating the substrate (W).

[0064] Fig. 6 is a conceptual diagram illustrating a laser-based chuck heating device according to another embodiment of the present invention. As illustrated in Fig. 6, the laser-based chuck heating device according to an embodiment of the present invention can control the temperature of a substrate by irradiating a substrate temperature control laser having a wavelength set according to the maximum light absorption rate of the substrate (W) to the substrate (W) using a substrate temperature control device, thereby causing the substrate to absorb the light energy of the substrate temperature control laser.

[0065] Fig. 7 is a flowchart of a laser-based chuck heating method according to an embodiment of the present invention. Referring to Figs. 1 to 3 and Fig. 7, the laser-based chuck heating method according to an embodiment of the present invention includes a step (S10) of preparing a support chuck (30) having a light absorbing portion (20) including a light absorbing material that absorbs laser light, and a step (S20) of controlling the temperature of the support chuck (30) by irradiating the light absorbing portion (20) with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material by a chuck temperature control device (40) so that the light energy of the laser is absorbed by the light absorbing material.

[0066] FIG. 8 is a flowchart specifically illustrating step S20 of FIG. 7. Referring to FIG. 7 and FIG. 8, a laser-based chuck heating method according to an embodiment of the present invention may include a step (S22) of generating an optical absorption spectrum representing optical absorption rate according to the wavelength of laser light for a light-absorbing material by a laser wavelength determination unit, and a step (S24) of determining the wavelength of the laser based on an optical absorption rate peak wavelength representing the maximum optical absorption rate in the optical absorption spectrum.

[0067] As described above, the laser-based chuck heating device and chuck heating method according to the embodiment of the present invention generate heat by allowing the optical energy of the laser to be absorbed by the light-absorbing material of the chuck. A wavelength that is easily absorbed by the light-absorbing material and a light-absorbing material that can increase the absorption rate can be selected. Accordingly, the optical energy incident on the support chuck can be efficiently absorbed as a heat source. The temperature of the support chuck is controlled by the absorbed laser heat source, and the temperature of the substrate (wafer) can be controlled through the temperature control of the support chuck.

[0068] According to an embodiment of the present invention, the heating and cooling of the chuck can be quickly adjusted by a laser, enabling easy chuck temperature control. The laser-based chuck heating device and chuck heating method according to an embodiment of the present invention can heat and cool the temperature of the material by irradiating the optical energy of the laser onto the target material and utilizing the characteristics of the material's light-absorbing substance.

[0069] Figure 9 is a diagram showing the optical properties (absorption, reflection, and transmission spectra) of Si material according to wavelength. In Figure 9, the solid line represents the absorption spectrum of Si material, the long-spaced dotted line represents the reflection spectrum of Si material, and the short-spaced dotted line represents the transmission spectrum of Si material.

[0070] By incorporating a light-absorbing material whose temperature is controlled by a laser as a component of the support chuck, the temperature of the chuck can be effectively and efficiently controlled. The chuck temperature can be effectively controlled depending on the laser wavelength and intensity, the light-absorbing material, and its thickness. Silicon has the characteristic of having the highest absorption rate at a wavelength of 980 nm.

[0071] Looking at the optical properties of Si materials, when irradiated with wavelengths in the 200-2000 nm range, laser light propagates in the form of absorption, reflection, and transmission. The energy absorbed is absorbed as heat energy, and the temperature of Si increases due to the absorbed heat energy. It has been confirmed that Si materials have the highest absorption rate at a wavelength in the 980 nm range. Si materials exhibit an absorption rate of over 60% in the 700-1000 nm range, enabling efficient light absorption and heat energy conversion using these wavelengths.

[0072] Considering that absorption decreases exponentially with the thickness of the light-absorbing material, an appropriate absorption thickness can be calculated based on the absorption characteristics of the light-absorbing material. While 980 nm was considered the optimal wavelength for absorption in Si materials, the laser wavelength can be selected within the range of 700 nm to 1500 nm.

[0073] Light-absorbing materials can be selected not only from silicon (Si), but also from various dielectrics, metals, and crystals. The degree of light absorption is determined by the wavelength of the incident laser, the amount of absorption by the absorbing material, and the intensity of the laser source. Depending on the intensity of the laser source, a temperature increase of more than 100°C per second is possible.

[0074] For example, when selecting a chuck heating structure for Si, the structure can be constructed with an upper layer of dielectric or metal on which to place the wafer, a lower layer of material that heats the wafer using laser irradiation, and a middle layer of metal that bonds the structures on both sides and transfers heat. The materials and structures of each of the upper, middle, and lower layers efficiently convert the laser light source into heat, which is then transferred to the wafer. If necessary, the upper and middle layers can be manufactured from the same material.

[0075] When placing a 300mm wafer on a chuck, it is possible to integrate multiple light sources to irradiate the bottom of the chuck to adjust the size and intensity of the laser light source. The light-absorbing material can be divided into one to seven or more, and the size of the light-absorbing material can be selected and attached to the bottom of the chuck. The example of Fig. 2 described above shows seven light-absorbing elements attached. In the illustrated example, the laser is split from a single light source and irradiated to each light-absorbing element. This is a case where the absorbing elements are attached to the bottom of the chuck as in the example when viewed from below.

[0076] The material's light absorption properties also allow for direct heating of Si wafers within the chamber. This can be achieved by irradiating the wafer with a laser source located above the chuck within the chamber, allowing direct absorption. However, direct substrate absorption requires separation of the light source and chamber via window glass, as the laser is irradiated within the process chamber. Furthermore, measures are needed to prevent device pattern absorption interference and laser-induced pattern damage on the Si wafer.

[0077] There are two main purposes of using a laser to control chuck temperature. First, it induces rapid temperature adjustments, enabling selective deposition or removal of substrate film on the chuck top. Second, it saves energy by stopping unnecessary heating during the waiting period for film removal processes using chuck heating.

[0078] Some semiconductor processes require in-situ temperature control, such as cleaning or atomic layer etching / deposition. Conventionally, to create a high-temperature environment, a separate temperature-raising device was built within the chamber, or a chamber with a separate high-temperature chuck was constructed. Separate temperature-raising devices attempted to control the temperature of the film on the wafer by adjusting the showerhead position or configuring a separate lamp within the chamber. Laser-based chuck temperature control devices irradiate the laser from the underside of the chuck, outside the chamber, rather than within the chamber where various chemical reactions occur. Furthermore, the degree of temperature rise and fall can be adjusted by optically adjusting the laser intensity, enabling detailed process control.

[0079] Semiconductor equipment consumes significant power. Along with RF, vacuum pumps, air conditioning, and control systems, chuck heating also consumes significant power. In the case of RF, plasma generation is unnecessary during equipment standby, significantly reducing standby power consumption. Conversely, conventional chuck heating methods rely on heat exchangers or heating elements for temperature control, which necessitates constant power consumption for stability reasons. This is due to the extremely low heat exchange rate of the heat source, which can take several minutes to several tens of minutes to adjust from room temperature to the desired temperature. Using lasers eliminates standby power consumption and rapidly adjusts the temperature to the required process temperature during process transitions, significantly reducing equipment power consumption.

[0080] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The written embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. A support member provided to support a substrate and having a light absorbing member including a light absorbing material that absorbs laser light; and A chuck temperature control device comprising: a chuck temperature control device that controls the temperature of the support chuck by irradiating the light absorbing portion with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material and absorbing the light energy of the laser into the light absorbing material; Laser-based chuck heating device.

2. In claim 1, A laser-based chuck heating device, wherein the wavelength of the laser is set according to a maximum light absorption rate of 60% or more of the light-absorbing material within a wavelength range of 700 nm to 1500 nm.

3. In claim 1, The above support member includes an upper layer on which the substrate is supported, and a lower layer provided below the upper layer and made of a light absorbing portion to absorb the light energy of the laser. The chuck temperature control device is a laser-based chuck heating device that irradiates the laser to the light absorbing portion provided in the lower layer at the lower portion of the support chuck.

4. In claim 3, A laser-based chuck heating device further comprising an intermediate layer made of a metal material provided between the upper layer and the lower layer and transmitting heat from the lower layer to the upper layer.

5. In claim 1, A laser-based chuck heating device, wherein the light absorbing portion includes a plurality of light absorbing elements provided in a plurality of regions partitioned in the lower portion of the support chuck.

6. In claim 5, A laser-based chuck heating device, wherein at least two of the plurality of light absorbing elements are configured such that the wavelengths of laser incident on the at least two light absorbing elements are set to be different.

7. In claim 1, A laser-based chuck heating device further comprising a substrate temperature control device that controls the temperature of a substrate by irradiating the substrate with a substrate temperature control laser having a wavelength set according to the maximum light absorption rate of the substrate and causing the substrate to absorb the optical energy of the substrate temperature control laser.

8. In claim 1, A laser-based chuck heating device further comprising a laser wavelength determining unit that generates an optical absorption spectrum representing optical absorption rate according to a wavelength of laser light for the optical absorbing material, and determines the wavelength of the laser based on a peak wavelength of optical absorption rate representing the maximum optical absorption rate in the optical absorption spectrum.

9. In claim 1, A laser-based chuck heating device, wherein the chuck temperature control device includes a wavelength-tunable laser, and the wavelength-tunable laser outputs the laser by controlling the wavelength according to a target temperature for the support chuck.

10. In claim 1, A laser-based chuck heating device further comprising a light absorption control unit that controls the light energy of the laser absorbed by the light absorption unit and the area of ​​the light absorption region by adjusting the distance between the support chuck and the laser generating unit of the chuck temperature control device according to the target temperature for the support chuck and the area of ​​the region requiring a temperature change among the support chucks.

11. In claim 1, A laser-based chuck heating device further comprising a laser output direction control unit that controls the direction of the laser so that the laser is irradiated to an area of ​​the chuck requiring temperature control by the laser according to the temperature distribution of the chuck.

12. In claim 1, A laser-based chuck heating device, wherein the thickness of the light absorbing portion is designed to have the maximum light absorption rate according to the light absorption characteristics of the light absorbing material based on the irradiation direction of the laser.

13. In claim 1, A laser-based chuck heating device, wherein the light absorbing portion is designed such that the thickness gradually decreases or increases from a central region of the laser irradiated onto the light absorbing portion to a peripheral region of the central region.

14. A substrate processing device comprising a laser-based chuck heating device according to claim 1 and a processing unit that performs processing on the substrate within the chamber.

15. In claim 14, A substrate processing device further comprising a laser control unit that controls the wavelength and intensity of a laser irradiated from the laser-based chuck heating device according to the process recipe of the processing unit.

16. A step of preparing a support member having a light absorbing portion including a light absorbing material that absorbs laser light, wherein the support member is arranged to support a substrate; and A laser-based chuck heating method, comprising: a step of controlling the temperature of the support chuck by irradiating the light-absorbing portion with a laser having a wavelength set according to the maximum light absorption rate of the light-absorbing material by a chuck temperature control device, thereby causing the light energy of the laser to be absorbed by the light-absorbing material.

17. In claim 16, The above light absorbing portion includes a plurality of light absorbing elements provided in a plurality of regions partitioned in the lower portion of the support, A laser-based chuck heating method, wherein at least two of the plurality of light absorbing elements are configured such that the wavelengths of laser incident on the at least two light absorbing elements are set to be different.

18. In claim 16, A laser-based chuck heating method, further comprising: a step of irradiating a substrate temperature control laser having a wavelength set according to the maximum light absorption rate of the substrate to the substrate by a substrate temperature control device, thereby controlling the temperature of the substrate by causing the substrate to absorb the light energy of the substrate temperature control laser.

19. In claim 16, A laser-based chuck heating method, further comprising: a step of generating an optical absorption spectrum representing optical absorption rate according to the wavelength of laser light for the optical absorbing material by a laser wavelength determining unit, and determining the wavelength of the laser based on a peak wavelength of optical absorption rate representing the maximum optical absorption rate in the optical absorption spectrum.

20. In claim 16, A laser-based chuck heating method, further comprising: a step of controlling the wavelength and intensity of the laser irradiated from the laser-based chuck heating device according to the process recipe of the processing unit by the laser control unit.

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