Flatband photodetector

Abstract

Flat-band meta-optics for efficient photodetectors, and associated systems and methods are described. In one embodiment, a meta-optics photodetector that is configured for detecting incoming light includes a patterned structure configured for illumination by incoming light. The patterned structure is patterned at a sub-wavelength scale. The meta-optics photodetector also includes an absorber configured for generating electrical charges in response to incoming light. A p-n junction is coupled to the absorber and configured for carrying away the electrical charges as an electrical signal.

Description

[0001] FLATBAND PHOTODETECTOR

[0002] CROSS-REFERENCE TO RELATED APPLICATION

[0003] This application claims the benefit of U.S. Application No. 63 / 605,141, filed on December 1, 2023, the disclosure of which is hereby incorporated by reference in its entirety.

[0004] STATEMENT OF GOVERNMENT LICENSE RIGHTS

[0005] This invention was made with government support under Grant No. DMR-2019444, awarded by the National Science Foundation (NSF). The government has certain rights in the invention.

[0006] BACKGROUND

[0007] Absorption of light and the conversion of photons into other forms of energy, such as excitons and phonons, has been widely utilized for optical sensing, imaging, and energy harvesting. Recently, rapid developments in wearable devices and emergence of Internet of Things has further increased the demand for smaller photodetectors (PDs) with high absorption efficiency. Compact integrated PDs could potentially provide several advantages for these applications, including high-resolution imaging thanks to large pixelcount, reduced energy consumption, and high-speed operation. However, two major limitations impede their functionality: a small device foot-print limits the total light collection; and a small device thickness limit the total amount of absorbed light. Accordingly, systems and methods with improved photodetection efficiency are still needed.

[0008] SUMMARY

[0009] This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This summary is not intended to identify key features of the claimed subject matter.

[0010] Briefly, the inventive technology is directed to sub-wavelength structuring of semiconductors has recently provided a powerful tool to engineer the dispersion of the light. Such structures, commonly known as meta-optics can achieve non-trivial relation between the energy and momentum of photons. One particularly intriguing possibility is to create a dispersion-free flat band, which allows a resonator to maintain the same resonance frequency for different incidence angles. Here, the inventive technology leverages such a flat band resonance, provided by a nonlocal meta-optics to simultaneously achieve critical absorption over a wide range of incidence angles. For a monolithic silicon meta-opticsal photodiode, we achieved a ~10-fold improvement in the photon-to-electron conversion efficiency. Such enhancement over a large angular range of -36° allows incoming light to be collected via a large aperture and focused on a compact photodiode, potentially enabling high-speed and low-light operation. The inventive technology unveils new possibilities of flat band meta-optics for compact and efficient optoelectronic devices with potential impact on devices in augmented reality, light detection and ranging, as well as mobile spectroscopy.

[0011] DESCRIPTION OF THE DRAWINGS

[0012] The foregoing aspects and many of the attendant advantages of this invention will become more readily appreciated as the same become better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:

[0013] FIGURE 1A is a conventional optical resonator with a weak absorber inside according to conventional technology7;

[0014] FIGURE IB is an optical absorber according to conventional technology;

[0015] FIGURE 1C is a flat band meta-optics as a combination of cavity and a weak absorber in accordance with embodiments of the present technology;

[0016] FIGURE 2A is a schematics of a flat band meta-optics in accordance with embodiments of the present technology;

[0017] FIGURE 2B is a top view of the meta-optics illustrated in FIGURE 2A;

[0018] FIGURE 3 illustrates an optical system using the meta-optics in accordance with embodiments of the present technology;

[0019] FIGURE 4 is a Detail A of FIGURE 3;

[0020] FIGURE 5 illustrates another embodiment of the meta-optics in accordance with embodiments of the present technology;

[0021] FIGURE 6 illustrates schematic of the 2D bullseye structure in accordance with embodiments of the present technology;

[0022] FIGURES 7 A, 7B and 7C illustrate schematics of the ID flatband and 2D flatband in accordance with embodiments of the present technology; FIGURES 8A, 8B, 8C and 8D illustrate different configurations of 2D bullseye structure in accordance with embodiments of the present technology;

[0023] FIGURE 9 illustrates schematic procedure for creating a lateral p-i-n photodiode from the silicon, flat band meta-optics in accordance with embodiments of the present technology;

[0024] FIGURE 10 illustrates experimental setup for the energy-momentum spectrum measurement in accordance with embodiments of the present technology;

[0025] FIGURE 11 illustrates experimental setup for meta-optics PD characterization in accordance with embodiments of the present technology';

[0026] FIGURES 12A, 12B and 12C illustrate simulated absorption spectra in accordance with embodiments of the present technology;

[0027] FIGURE 13 illustrates wavelength dependent responsivity of the flat band PD spectra in accordance with embodiments of the present technology;

[0028] FIGURE 14 illustrates spectral parameters in accordance with embodiments of the present technology-; and

[0029] FIGURE 15 is energy-momentum spectrum of the flat-band PD in accordance with embodiments of the present technology7.

[0030] DETAILED DESCRIPTION

[0031] While several embodiments have been illustrated and described, it will be appreciated that various changes can be made therein without departing from the spirit and scope of the claimed subject matter.

[0032] In different embodiments, the inventive technology includes an optical cavity' (meta-optics) to collect light. Resonant cavity enhanced absorption occurs as the optical cavity traps light for a longer time period and by that increases the absorption efficiency. Various dielectric and plasmonic resonators have been used to enhance the photon-to- electron conversion efficiency of photo detectors (PDs) in silicon and other materials. However, optical cavity enhancement only occurs for near-normal incident light, and thus is incompatible with lens-based concentrators, as focused light contains a wide range of incidence angles. Therefore, an angle-independent resonant cavity can enhance both the light-absorption and can be compatible with a light concentrator to enhance the photo-responsivity7. In some embodiments, the optical cavity (also referred to as patterned structure) and absorber are monolotic. This can be achieved by, for example, making the optical cavity of semiconductor material with a suitable junction. Thus, the one and same structure becomes the optical cavity (patterned structure) and light absorber.

[0033] In other embodiments, the patterned structure (optical cavity) and absorber are separate structures. This can be achieved by, for example, making the optical cavity of clear plastic or other materials that are not necessarily transparent (materials, e.g., dielectrics, semiconductors, metals) and does not need to be clear. The absorber may be made of a suitable semiconductor material junction.

[0034] FIGURE 1A is a conventional optical resonator with a weak absorber according to conventional technology. In operation, the incoming light 50 is partially absorbed within the optical resonator 12.

[0035] FIGURE IB is another optical absorber according to conventional technology. Here, an optical resonator 14 is constructed for cavity enhanced absorption. However, a relatively week absorption of the optical resonator 14 results from, among other factors, a relatively narrow band of incoming light angles that the illustrated optical resonator 12 can process.

[0036] FIGURE 1C is a flat band meta-optics as a combination of cavity and a weak absorber in accordance with embodiments of the present technology. Illustrated absorption cavity (also referred to as meta-optics) 16 is characterized by a cavity enhanced absorption based at least in part on a concentrator (e.g., a lens) 18 collecting large amount of light 50 into the illustrated meta-optics 16. The output light is marked by numeral 52.

[0037] The meta-optics 16 is capable of an angle independent resonance frequency, thus allowing cavity enhanced absorption of light consisting of many incident angles. We adapted a guided-mode resonance design in a silicon meta-optics and by fine tuning the geometrical parameter, implement a photonic flat band. By exploiting the inherent absorption of silicon in the near-infrared spectrum, it is possible to critically couple absorption with an absorption ratio (ac) of about 70% by adjusting the quality (Q) factor while maintaining the flat band. This ensures that light over a wide angular range (±18°) undergoes cavity enhanced absorption by the meta-optics 16.

[0038] FIGURE 2A is a schematics of a flat band meta-optics in accordance with embodiments of the present technology. FIGURE 2B is a top view of the meta-optics illustrated in FIGURE 2A. In some embodiments, to harness the advantage of the enhanced absorption effect, we designed and fabricated a monolithic lateral p-i-n photodiode (PD) within the flat band meta-optics. A person of ordinary skill would know that a p-i-n diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. This enables the collection of a large amount of light by using a lens, while keeping the active volume of the PD small. Thus, both light concentration using a larger aperture and cavity enhancement can be achieved over a large angular range. For example, for incident light focused with a numerical aperture (NA) of 0.13, the flat band PD shows a 10.3-fold enhanced responsivity compared to the unpattemed Si-PD at the resonance wavelength of about 785 nm. In addition, the responsivity of this single-junction meta-opticsal PD depends on the wavelength and polarization of light, which can be further exploited to create a spectrally selective and polarization sensitive miniaturized PD. Such multi-functionality can reduce the fabrication costs and optical crosstalk between pixels, and have far-reaching impact on wearable sensors, including miniature spectrometers and transducers.

[0039] Cavity -enhanced absorption in conventional resonators retains a strong chromatic dependence, due to the optical path length dependance on the incidence angle. Specifically, the resonance conditions arise from construct ve / destructive interference and thus a variation in the effective optical path length drastically alters it. On the contrary, photonic flat bands have no such chromatic dispersion over a certain angular range. By fine-tuning the coupling between different modes, various photonic bands including flat band, Dirac- cone, and multi-valley structures have been realized in meta-optics 16.

[0040] FIGURE 2B illustrates a Hatband one-dimensional (ID) meta-optics in a partially- etched silicon slab that can be made on sapphire. The unit cell is composed of two symmetry broken meta-atoms 16-1 and 16-2. While the thickness of the silicon film is typically fixed, other parameters, including the fill factor, partial etch ratio, asymmetry (A) between the adjacent meta-atoms 16-1 and 16-2, and period constitute the design space for the meta-atoms 16-1 and 16-2. A person of ordinary skill would understands that many more meta-atoms may be arranged together for a practical meta-optics implementation. For the illustrated embodiment, the fill factor can be defined as a / (A+a) or b / (B+b). In some embodiments, these fill factors may be the same. The asymmetry (A) between the adjacent meta-atoms can be defined as: 1 A — B l a — b A= - = -

[0041] 2 A + B 2 a + b

[0042] Both the fill factor and partial etching ratio introduce a vertical symmetry breaking, while A and period control the Quality (Q)-factor and the resonance frequency, respectively. In some embodiments, the illustrated flat band meta-optics 16 can be designed using rigorous coupled-wave analysis (RCWA) and fabricated the structure via single-step electron beam lithography followed by reactive ion etching. By adjusting the fill factor of the structure, various photonic band structures may be realized, including Dirac-cone and photonic flat band. Furthermore, in at least some embodiments a flat band emerges with an isofrequency resonance and is maintained over a wide angular range of ±18° or other range of angles. In comparison, conventional resonators show a strong dependence of the resonance frequency on the angle of incidence.

[0043] FIGURE 3 illustrates an optical system using the meta-optics in accordance with embodiments of the present technology . FIGURE 4 is a Detail A of FIGURE 3. In particular, FIGURE 3 illustrates a lateral p-i-n PD 160 that is coupled with a concentrator lens (focusing lens) 18. The incoming light 50 may be generated by a tunable laser. A relatively large amount of light can be collected and focused onto a compact flat bandbased meta-optics PD 160 by the lens 18. The tunable laser allows wavelength-selective response measurement of devices. The meta-optics PD 160 may be fabricated on a substrate 20 (e.g.. a silicon substrate). In operation, metal electrodes 42 collect light-generated electrical charges.

[0044] FIGURE 4 illustrates details of the meta-optics PD 160. The meta-optics 160 includes a patterned structure 162 that can be characterized by, for example, fill factor, asymmetry parameter A. and / or other parameters. The patterned structure 162 can be made of semiconductor (e.g., silicon), transparent plastic, or other transparent materials.

[0045] The meta-optics 160 also includes an absorber 166 where the incoming light is absorbed, and, in response, free electrical charges are generated. These electrical charges are transferred as a photocurrent by a p-n junction 154.

[0046] Therefore, the illustrated meta-optics photodetector 160 detects incoming light by the interactions among the patterned structure 162, the absorber 166, and the p-n junction 164. The patterned structure 162 is patterned at a sub-wavelength scale. The absorber 166 is configured for generating electrical charges in response to incoming light 50, and the p- n junction is coupled to the absorber and configured for earn ing away the electrical charges as an electrical signal.

[0047] In some embodiments, the p-n junction 164 is also patterned at the sub-wavelength scale. In other embodiments, the p-n junction 164 is not patterned.

[0048] In some embodiments, the patterned structure 162 is made of plastic, and the absorber 166 is made of semiconductor material. In other embodiments, both the patterned structure 162 and the absorber 166 are made of semiconductor material. Therefore, in some embodiments the absorber 166 and the patterned structure 162 are a monolithic structure.

[0049] In some embodiments, the patterned structure 162 is periodic. The patterned structure 162 can be configured based on: a fill factor that introduces a vertical symmetry breaking into the structures; an asymmetry between adjacent meta-atoms; and a period between the structures. The period at least in part controls a resonance frequency of the meta-optics 160. The periodic structures of the patterned structure 162 can be at least partially etched.

[0050] In some embodiments, the patterned structure is configured for generating a generally constant response for a range of angles of incoming light (e.g., + / - 18° or other values). In some embodiments, the meta-optics photodetector is configured for generating generally a same amount of current for incoming light within the range of angles of incoming light.

[0051] In some embodiments, the meta-optics photodetector 160 may also include the concentrator lens 18 that is configured for focusing incoming light onto the pattern of structures.

[0052] FIGURE 5 illustrates another embodiment of the meta-optics in accordance with embodiments of the present technology. In particular, the illustrated meta-optics 16 includes structures that are shaped like an inverse letter “S.” A top view of the meta-optics 16 is shown, where SIA and S2A indicate segments of the lithographic structures that constitute parts of the inverse letter “S.” Such meta-optics structures 16 may be especially useful for circularly polarized light. In particular, a numerical aperture (NA) dependent absorption in 2D bullseye structure can be compared to ID flat band, as explained below with respect to FIGURE 12C.

[0053] FIGURE 6 illustrates a schematic of the 2D bullseye structure in accordance with embodiments of the present technology. The bottom and right-hand side arrangement represent corresponding cross-sections of the bullseye structure of the meta-optics 160. Corresponding k-vectors and polarization directions at the resonance are indicated by arrows.

[0054] FIGURES 7A, 7B and 7C illustrate schematics of the ID flatband and 2D Hatband of the meta-optics 160 in accordance with embodiments of the present technology7. In particular, FIGURE 7 A illustrates schematics of the ID flatband; FIGURE 7B illustrates schematics of the 2D flatband before considering the curved shapes; and FIGURE 7C illustrates schematics of the 2D flatband after considering the curved shapes.

[0055] FIGURES 8A, 8B, 8C and 8D illustrate different configurations of 2D bullseye structure in accordance with embodiments of the present technology. In different embodiments, different configurations of 2D bullseye structure of the meta-optics 160 are also possible.

[0056] FIGURE 9 illustrates schematic procedure for creating a lateral p-i-n photodiode from the silicon, flat band meta-optics 160 in accordance with embodiments of the present technology. In some embodiments, a photonic flat band is created from the crystalline- silicon on sapphire wafer, where the thickness of the silicon is about 230 nm. For example, spin-coated ZEP-520A resist can be configured on top of the wafer, and then baked at 180°C for 3 min. Next, we spin-coated electron discharger on it, perform electron-beam- lithography, and developed with amyl acetate. Creating a flat band meta-optics is the only process where the electron-beam-lithography is necessary, other than that, the optical lithography can be used instead, which enables mass production. The silicon is etched with mixture of SFe and C4F8 under N2 atmosphere and the resist is removed with l-methyl-2- pyrrolidone. Then, it can be confirme whether the meta-optics with photonic flat band was created by measuring the energy-momentum spectrum. If so, two sequences of lithography and ion implantation is performed with with phosphorous (boron) ions for p- (n-) doping, respectively, and a lateral p-i-n photodiode is created. For the ion implantations, 2.00 X 1015ions / cm2doses can be used for both phosphorous and boron doping, but with different acceleration voltage: 40 kV for phosphorous and 14 kV for boron. Next, the ion implanted sample can be annealed at 100°C for 10 min to activate the doping in the furnace. In order to operate the lateral p-i-n photodiode, we need to isolate the devices from the entire silicon layers. So, all the unnecessary7silicon layers are patterned and etched to isolate the p-i-n devices from each other. In the illustrated case, 14 devices were made with different fill factors on a single chip in order to compensate the uncertain control of the partial etching depth, and metal contacts were made for all the devices at the same time. Two of those 14 devices are unetched and partially etched devices without any patterns on it for the references. Another optical lithography and electron-beam-evaporation followed by the liftoff process is done to create Ti / Au metal pads. Then, two wires were soldered on each pad to stably apply the bias voltage and measure the photocurrent. Lastly, the sample is placed on the optical setup to selectively illuminate the focused light with an objective lens and measuring the photocurrent under the reverse bias voltage, as further explained with respect to FIGURES 10 and 1 1 below.

[0057] FIGURE 10 illustrates experimental setup 1001 for the energy-momentum spectrum measurement in accordance with embodiments of the present technology. Illustrated setup includes a source of light (e.g., a laser) 100, a fiber coupler 105, a pinhole 1 10, minors 115 and 117, a beam splitter 120, objective lenses 125 and 130, mirrors 135, a polarizer 140, a spectrometer 150, a camera (e.g., a CCD camera) 155, and a measurement instrument (e.g., oscilloscope, voltmeter) 160. Arrows indicate direction of the incident light and reflected light. In one embodiment, a broad-band Xenon lamp 100 is used to characterize reflection (transmission) energy -momentum spectra of the meta-optics 160. Lenses L are used to collimate light beams. In particular, illustrated 4-f system is used to finely collimate the light and enlarge the beam size. Detachable mirror 135 was used to measure either reflection or transmission configuration. High-NA objective lens 125 (NA = 0.95) is used for both focusing and collecting light in reflection configuration, but low- NA objective lens 130 (NA = 0.55) is used only for focusing light on transmission configuration, while high-NA objective lens 125 is used for collection. This is because the working distance of high-NA objective lens 125 is relatively short, about 0.35 mm, and thus unable to put meta-optics 160 and align if we use two high-NA objective lensesl25. 130. Fourier lens (L5) allows detector to measure angular information instead of spatial information of both reflection and transmission, and the grating inside the spectrometer 150 allows detector to measure spectral information recorded by the CCD camera 155.

[0058] FIGURE 11 illustrates experimental setup 1002 for meta-optics PD characterization in accordance with embodiments of the present technology. In some embodiments, a tunable laser 100 and polarizer 140 are used to characterize both wavelength- and polarization-dependent response of the flat band meta-optics PD 160. In some embodiments, an objective lens 125 is used for both focusing the laser and also the imaging, because of the need to observe whether the focused light is illuminating on the appropriate device and the active region. In a particular experiment, a light-emitting diode (LED) 101 emits light at 780 nm wavelength and two-dimensional (2D) CMOS camera 155 is used for imaging the device and alignment. While irradiating the focused light onto the meta-optics PD 160, the photocurrent is measured by connecting wires to both p- and n-contact metal pads of the meta-optics PD 160, and applying a reverse bias voltage of -2 V. With neutral density filter ND, it is possible to adjust the power of the irradiating light, and to simultaneously measure the incident light power and the photocurrent with a highly sensitive power meter 165 and source measure unit 160, respectively.

[0059] FIGURES 12A, 12B and 12C illustrate simulated absorption spectra in accordance with embodiments of the present technology. These results shown in these figures are obtainable using the meta-optics PD illustrated in FIGURE 6. In particular, FIGURES 12A and 12B illustrate simulated absorption spectra of ID flat band and 2D bullseye structures with respect to the NA of the focused incident light. FIGURE 12C illustrates simulated absorption pow er enhancement of ID flat band and 2D bullseye structures compared to the 230-nm-thick silicon film depend on NA of the focused input light. A star symbol indicates the measured value at NA of 0. 13.

[0060] FIGURE 13 illustrates wavelength dependent responsivity of the flat band meta- optics PD spectra in accordance with embodiments of the present technology. In particular, the sequence of graphs shows power dependent photocurrent at the wavelength from 765 to 799 nm. The light is linearly polarized in TE-mode.

[0061] FIGURE 14 illustrates spectral parameters in accordance with embodiments of the present technology. The flat band meta-optics photo-diode 160 has its resonance w avelength of about 785 nm. Therefore, the value of “O’" on the horizontal axis represents the resonance wavelength of about 785 nm. Line-profile indicates the focused light, and Gaussian functional fitting with full-width at half maximum (FWHM) of the light intensity being 3.64 pm.

[0062] FIGURE 15 is energy-momentum spectrum of the flat-band PD in accordance with embodiments of the present technology. White arrow indicates the flat band of the meta- optics PD 160, and the resonance is at the wavelength of about 785 nm. Such flat band may be present, for example, for the range of incoming angles of light of + / - 18° or another range of angles.

[0063] The complete disclosure of all patents, patent applications, and publications, and electronically available material cited herein are incorporated by reference in their entirety. Supplementary materials referenced in publications (such as supplementary tables, supplementary figures, supplementary materials and methods, and / or supplementary experimental data) are likewise incorporated by reference in their entirety. In the event that any inconsistency exists between the disclosure of the present application and the disclosure(s) of any document incorporated herein by reference, the disclosure of the present application shall govern. The foregoing detailed description and examples have been given for clarity of understanding only. No unnecessary limitations are to be understood therefrom. The invention is not limited to the exact details shown and described, for variations obvious to one skilled in the art will be included within the invention defined by the claims.

[0064] The description of embodiments of the disclosure is not intended to be exhaustive or to limit the disclosure to the precise form disclosed. While the specific embodiments of, and examples for, the disclosure are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the disclosure.

[0065] Specific elements of any foregoing embodiments can be combined or substituted for elements in other embodiments. Moreover, the inclusion of specific elements in at least some of these embodiments may be optional, wherein further embodiments may include one or more embodiments that specifically exclude one or more of these specific elements. Furthermore, while advantages associated with certain embodiments of the disclosure have been described in the context of these embodiments, other embodiments may also exhibit such advantages, and not all embodiments need necessarily exhibit such advantages to fall w ithin the scope of the disclosure.

[0066] As used herein and unless otherwise indicated, the terms “a” and “an” are taken to mean “one”, “at least one” or “one or more”. Unless otherwise required by context, singular terms used herein shall include pluralities and plural terms shall include the singular.

[0067] Unless the context clearly requires otherwise, throughout the description and the claims, the words ‘comprise’, ‘comprising’, and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to”. Words using the singular or plural number also include the plural and singular number, respectively. Additionally, the w ords “herein,” “above,” and “below” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of the application. Unless otherwise indicated, all numbers expressing quantities of components, molecular weights, and so forth used in the specification and claims are to be understood as being modified in all instances by the term ’‘about.” In the context of this disclosure, the terms “about,” approximately,” “generally” and similar mean + / - 5% of the stated value. Accordingly, unless otherwise indicated to the contrary, the numerical parameters set forth in the specification and claims are approximations that may vary depending upon the desired properties sought to be obtained by the present invention. At the very least, and not as an attempt to limit the doctrine of equivalents to the scope of the claims, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.

[0068] Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. All numerical values, however, inherently contain a range necessarily resulting from the standard deviation found in their respective testing measurements.

[0069] All headings are for the convenience of the reader and should not be used to limit the meaning of the text that follows the heading, unless so specified.

[0070] All of the references cited herein are incorporated by reference. Aspects of the disclosure can be modified, if necessary, to employ the systems, functions, and concepts of the above references and application to provide yet further embodiments of the disclosure. These and other changes can be made to the disclosure in light of the detailed description.

[0071] It will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the claims.

Claims

CLAIMSWhat is claimed is:

1. A meta-optics photodetector configured for detecting incoming light, comprising: a patterned structure configured for illumination by incoming light, wherein the patterned structure is patterned at a sub-wavelength scale, and an absorber configured for generating electrical charges in response to incoming light; and a p-n junction coupled to the absorber and configured for carrying away the electrical charges as an electrical signal.

2. The meta-optics photodetector of claim 1 , wherein the patterned structure is configured for generating a generally constant response for a range of angles of incoming light.

3. The meta-optics photodetector of claim 2. configured for generating generally a same amount of current for incoming light within the range of angles of incoming light.

4. The meta-optics photodetector of claim 2, wherein the range of angles of incoming light is +18 deg to -18 deg.

5. The meta-optics photodetector of claim 1 , further comprising a concentrator lens configured for focusing incoming light onto the pattern of structures.

6. The meta-optics photodetector of claim 1 , wherein the p-n junction is patterned at the sub-wavelength scale.

7. The meta-optics photodetector of claim 1 , wherein the patterned structure is made of plastic, and the absorber is made of semiconductor.

8. The meta-optics photodetector of claim 1, wherein the patterned structure and the absorber are made of semiconductor.

9. The meta-optics photodetector of claim 1, wherein the absorber and the patterned structure are a monolithic structure.

10. The meta-optics photodetector of claim 1 , wherein the patterned structure is periodic.1 1. The meta-optics photodetector of claim 1 , wherein the patterned structure is configured based on: a fill factor that introduces a vertical symmetry breaking into the structures; an asymmetry between adjacent meta-atoms; and a period between the structures, wherein the period at least in part controls a resonance frequency, wherein the structures are partially etched.

12. A method of detecting incoming light by a meta-optics photodetector, the method comprising: receiving incoming light by a patterned structure that is patterned at a subwavelength scale; and generating electrical charges by an absorber in response to incoming light; and carrying away the electrical charges as an electrical signal by a p-n junction, wherein the meta-optics photodetector is configured for generating a generally constant response for a range of angles of incoming light.

13. The method of claim 12, further comprising focusing incoming light onto the patterned structure by a concentrator lens.

14. The method of claim 12, wherein the patterned structure is configured for generating a generally constant response for a range of angles of incoming light.

15. The method of claim 14, wherein the range of angles of incoming light is + 18 deg to -18 deg.

16. The method of claim 12, wherein the p-n junction is patterned at the subwavelength scale.

17. The method of claim 12, wherein the patterned structure is made of plastic, and the absorber is made of semiconductor.

18. The method of claim 12, wherein the patterned structure and the absorber are made of semiconductor.

19. The method of claim 12, wherein the absorber and the patterned structure are a monolithic structure.

20. The method of claim 12, wherein the patterned structure is periodic.

21. The method of claim 12, wherein the patterned structure is configured based on: a fill factor that introduces a vertical symmetry breaking into the structures; an asymmetry between adjacent meta-atoms; and a period between the structures, wherein the period at least in part controls a resonance frequency, wherein the structures are partially etched.

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