Driving circuit of insulated gate bipolar transistor

Abstract

The present application relates to the technical field of driving circuits. and provides a driving circuit of an insulated gate bipolar transistor. A control sub-circuit, in response to a control instruction, controls an insulated gate bipolar transistor to be turned on or off; a current value of the insulated gate bipolar transistor is collected by means of an overcurrent protection sub-circuit; when the current value is greater than a preset current threshold, the control sub-circuit is enabled to turn off the insulated gate bipolar transistor, and an LC oscillation voltage generated by the insulated gate bipolar transistor is reduced by means of a voltage stabilizing sub-circuit; and when the insulated gate bipolar transistor is turned off, a clamping sub-circuit enables a voltage difference between a first grounding end of the control sub-circuit and a second grounding end of the insulated gate bipolar transistor be at a preset difference, the preset difference being less than an on-voltage value of the insulated gate bipolar transistor. Thus, the possibility of the insulated gate bipolar transistor being abnormal due to an abnormal voltage and an abnormal current is reduced, and the problem in the existing technology of the insulated gate bipolar transistor being abnormal is solved.

Description

A driving circuit for an insulated gate bipolar transistor

[0001] This application claims priority to a patent application filed with the State Intellectual Property Office of China on December 6, 2023, with application number 202311667191.2 and application name “A driving circuit for an insulated gate bipolar transistor”. Technical Field

[0002] The present application belongs to the technical field of drive circuits, and in particular relates to a drive circuit for an insulated gate bipolar transistor. Background Art

[0003] Insulated gate bipolar transistors (IGBTs) are widely used in high-power circuits, such as air conditioning control circuits, induction cooker control circuits, and motor drive circuits. The IGBT's driver circuit is used to turn the IGBT on and off.

[0004] In the prior art, surge current, static electricity, and spike voltages caused by parasitic inductance often occur in the drive circuit of the IGBT. These conditions will generate abnormal voltages and abnormal currents, which exceed the range that the IGBT itself can withstand, causing IGBT abnormalities.

[0005] It should be noted that IGBT abnormalities include abnormal IGBT turn-on, IGBT damage, etc.

[0006] Summary of the Invention

[0007] The present application aims to provide a driving circuit for an insulated gate bipolar transistor, which at least solves the problem in the prior art that the insulated gate bipolar transistor may be abnormal due to abnormal voltage and abnormal current in the driving circuit where the insulated gate bipolar transistor is located.

[0008] In order to solve the above technical problems, this application is implemented as follows:

[0009] An embodiment of the present application provides a driving circuit for an insulated gate bipolar transistor, the circuit comprising: a control subcircuit, an overcurrent protection subcircuit, a voltage stabilization subcircuit, a clamping subcircuit, and an insulated gate bipolar transistor;

[0010] The control subcircuit is connected to the overcurrent protection subcircuit, the voltage stabilization subcircuit, and the clamping subcircuit respectively, and the edge-gate bipolar transistor is connected to the overcurrent protection subcircuit, the voltage stabilization subcircuit, the clamping subcircuit, and the control subcircuit respectively;

[0011] The control subcircuit is used to control the insulated gate bipolar transistor to be turned on or off in response to a control instruction; the overcurrent protection subcircuit is used to collect the current value of the insulated gate bipolar transistor and, when the current value is greater than a preset current threshold, cause the control subcircuit to turn off the insulated gate bipolar transistor; the voltage stabilization subcircuit is used to reduce the LC oscillation voltage generated by the insulated gate bipolar transistor so that the insulated gate bipolar transistor obtains a stable voltage; the clamping subcircuit is used to ensure that, when the insulated gate bipolar transistor is turned off, the voltage difference between the first ground terminal of the control subcircuit and the second ground terminal of the insulated gate bipolar transistor is at a preset difference, and the preset difference is less than the on-state voltage value of the insulated gate bipolar transistor.

[0012] In the embodiment of the present application, the insulated gate bipolar transistor is turned on or off by controlling the control sub-circuit in response to the control instruction, thereby realizing the turning on and off of the insulated gate bipolar transistor. The overcurrent protection subcircuit collects the current value of the IGBT and, when the current value is greater than a preset current threshold, causes the control subcircuit to turn off the IGBT to reduce damage to the IGBT caused by currents greater than the current threshold. The voltage stabilization subcircuit reduces the LC oscillation voltage generated by the IGBT so that the IGBT obtains a stable voltage. The clamping subcircuit ensures that, when the IGBT is turned off, the voltage difference between the first ground terminal of the control subcircuit and the second ground terminal of the IGBT is within a preset value. The preset value is less than the turn-on voltage of the IGBT to reduce the possibility of abnormal turn-on of the IGBT due to the voltage difference between the first ground terminal and the second ground terminal being greater than the turn-on voltage of the IGBT. This reduces the possibility of abnormal turn-on of the IGBT due to abnormal voltage and abnormal current in the drive circuit of the IGBT, thereby solving the problem in the prior art of abnormal turn-on of the IGBT due to abnormal voltage and abnormal current in the drive circuit of the IGBT. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In the attached figure:

[0014] FIG1 is a schematic diagram of a driving circuit of an insulated gate bipolar transistor provided in an embodiment of the present application;

[0015] FIG2 is a schematic diagram of a driving circuit of an insulated gate bipolar transistor according to an embodiment of the present application;

[0016] FIG3 is a schematic diagram of another driving circuit of an insulated gate bipolar transistor provided in an embodiment of the present application;

[0017] FIG4 is a schematic diagram of an equivalent circuit composed of a voltage stabilizing sub-circuit and an insulated gate bipolar transistor provided in an embodiment of the present application. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0019] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0020] 1 , an embodiment of the present application provides a driving circuit for an insulated gate bipolar transistor 50, the circuit comprising: a control subcircuit 10, an overcurrent protection subcircuit 20, a voltage stabilizing subcircuit 30, a clamping subcircuit 40, and an insulated gate bipolar transistor 50; the control subcircuit 10 is respectively connected to the overcurrent protection subcircuit 20, the voltage stabilizing subcircuit 30, and the clamping subcircuit 40, and the insulated gate bipolar transistor is respectively connected to the overcurrent protection subcircuit 20, the voltage stabilizing subcircuit 30, the clamping subcircuit 40, and the control subcircuit 10; the control subcircuit 10 is used to control the insulated gate bipolar transistor 50 to be turned on or off in response to a control instruction; the overcurrent protection subcircuit 20 The control sub-circuit 10 is used to collect the current value of the insulated gate bipolar transistor 50 and, when the current value is greater than a preset current threshold, to turn off the insulated gate bipolar transistor 50; the voltage stabilization sub-circuit 30 is used to reduce the LC oscillation voltage generated by the insulated gate bipolar transistor 50 so that the insulated gate bipolar transistor 50 obtains a stable voltage; the clamping sub-circuit 40 is used to, when the insulated gate bipolar transistor 50 is turned off, ensure that the voltage difference between the first ground terminal G1 of the control sub-circuit 10 and the second ground terminal G2 of the insulated gate bipolar transistor 50 is at a preset difference, and the preset difference is less than the on-state voltage value of the insulated gate bipolar transistor 50.

[0021] It should be noted that the current threshold is smaller than the maximum current value that the IGBT 50 can withstand. For example, the current threshold is 80% of the maximum current value that the IGBT 50 can withstand.

[0022] Specifically, in some embodiments, the preset difference may be 0.7V.

[0023] In the embodiment of the present application, the insulated gate bipolar transistor is turned on or off by controlling the control sub-circuit in response to the control instruction, thereby realizing the turning on and off of the insulated gate bipolar transistor. The overcurrent protection subcircuit collects the current value of the IGBT and, when the current value is greater than a preset current threshold, causes the control subcircuit to turn off the IGBT to reduce damage to the IGBT caused by currents greater than the current threshold. The voltage stabilization subcircuit reduces the LC oscillation voltage generated by the IGBT so that the IGBT obtains a stable voltage. The clamping subcircuit ensures that, when the IGBT is turned off, the voltage difference between the first ground terminal of the control subcircuit and the second ground terminal of the IGBT is within a preset value. The preset value is less than the turn-on voltage of the IGBT to reduce the possibility of abnormal turn-on of the IGBT due to the voltage difference between the first ground terminal and the second ground terminal being greater than the turn-on voltage of the IGBT. This reduces the possibility of abnormal turn-on of the IGBT due to abnormal voltage and abnormal current in the drive circuit of the IGBT, thereby solving the problem in the prior art of abnormal turn-on of the IGBT due to abnormal voltage and abnormal current in the drive circuit of the IGBT.

[0024] Optionally, referring to Figure 2, in some embodiments, the overcurrent protection sub-circuit 20 includes a current sampling device RS, a switch control molecular circuit 21, and a switch device M1; referring to Figure 3, the current sampling device RS is respectively connected to the switch control molecular circuit 21 and the insulated gate bipolar transistor 50, the switch control molecular circuit 21 is connected to the switch device M1, and the switch device M1 is respectively connected to the control sub-circuit 10 and the first ground terminal G1; the current sampling device RS is used to collect the current value; the switch control molecular circuit 21 is used to generate a control signal when the current value is greater than a preset current threshold; the switch device M1 is used to turn on in response to the control signal, so that the control sub-circuit 10 turns off the insulated gate bipolar transistor 50.

[0025] In an embodiment of the present application, the current value is collected by the current sampling device RS, and the switch control molecular circuit 21 generates a control signal when the current value is greater than a preset current threshold. The switch device M1 is turned on in response to the control signal, so that the control sub-circuit 10 turns off the insulated gate bipolar transistor 50, thereby reducing the damage to the insulated gate bipolar transistor 50 caused by the current whose current value is greater than the current threshold.

[0026] Optionally, referring to Figure 3, in some embodiments, the current sampling device RS is a current sampling resistor, the switching device M1 is a first MOS transistor, and the switch control molecular circuit 21 includes a first resistor R1, a second resistor R2, a third resistor R3, and an operational amplifier F; a first end of the first resistor R1 is connected to the first end of the current sampling resistor, a second end of the first resistor R1 is connected to the non-inverting input terminal of the operational amplifier F, a second end of the first resistor R1 is connected to the first end of the second resistor R2, and a second end of the second resistor R2 is connected to the output terminal of the operational amplifier F; a first end of the third resistor R3 is connected to the second end of the current sampling resistor, and a second end of the third resistor R3 is connected to the inverting input terminal of the operational amplifier F; a first end of the current sampling resistor is connected to the emitter of the insulated gate bipolar transistor 50, and the emitter of the insulated gate bipolar transistor 50 is connected to the second ground terminal G2; the output terminal of the operational amplifier F is connected to the gate of the first MOS transistor, the source of the first MOS transistor is connected to the first ground terminal G1, and the drain of the first MOS transistor is connected to the control sub-circuit 10.

[0027] Specifically, in some embodiments, the first MOS transistor (Metal-Oxide-Semiconductor Field-Effect Transistor) may be a PMOS transistor (positive channel Metal Oxide Semiconductor).

[0028] In the embodiment of the present application, a control signal is generated by the first resistor R1, the second resistor R2, the third resistor R3, and the operational amplifier F when the current value is greater than a preset current threshold. The first MOS tube is turned on in response to the control signal, so that the control subcircuit 10 turns off the insulated gate bipolar transistor 50 and the current value is collected through the current sampling resistor.

[0029] Optionally, referring to Figure 3, in some embodiments, the current sampling resistor is used to collect the current value output by the emitter of the insulated gate bipolar transistor 50; the first resistor R1, the second resistor R2, and the third resistor R3 cooperate with the operational amplifier F to generate the control signal when the current value is greater than a preset current threshold, and the control signal is used to make the voltage difference between the gate and the source of the first MOS transistor greater than the turn-on voltage value of the first MOS transistor; the first MOS transistor is used to turn on in response to the control signal, so that the control subcircuit 10 stops receiving the control instruction, thereby turning off the insulated gate bipolar transistor 50 when the control subcircuit 10 does not receive the control instruction.

[0030] It should be noted that the resistance value of the current sampling resistor remains unchanged, and the voltage across the current sampling resistor is positively correlated with the current value output by the emitter of the insulated gate bipolar transistor 50. A larger voltage across the current sampling resistor indicates a larger current value output by the emitter of the insulated gate bipolar transistor 50. Therefore, the voltage across the current sampling resistor is amplified by the operational amplifier F. When the current value is greater than a preset current threshold, the first MOS transistor is turned on, so that a pulse width modulation (PWM) signal (i.e., a control instruction) is not input into the control sub-circuit 10. Instead, the PWM signal flows through the first MOS transistor and into the first ground terminal G1. The PWM signal is input through the control input terminal P, which is connected to the drain of the first MOS transistor and the control sub-circuit 10, respectively.

[0031] In the embodiment of the present application, the current value output by the emitter of the insulated gate bipolar transistor 50 is collected through a current sampling resistor, and the first resistor R1, the second resistor R2, the third resistor R3 cooperate with the operational amplifier F to generate a control signal when the current value is greater than a preset current threshold. The control signal is used to make the voltage difference between the gate and the source of the first MOS transistor greater than the turn-on voltage value of the first MOS transistor, and then the first MOS transistor is turned on in response to the control signal, so that the control sub-circuit 10 stops receiving control instructions, and thus turns off the insulated gate bipolar transistor 50 when the control sub-circuit 10 does not receive the control instruction.

[0032] Optionally, referring to Figure 3, in some embodiments, the switch control molecular circuit 21 also includes a third diode D3; the positive electrode of the third diode D3 is connected to the first end of the third resistor R3, and the negative electrode of the third diode D3 is connected to the inverting input end of the operational amplifier F.

[0033] It should be noted that the anode of the third diode D3 is connected to the third ground terminal G3.

[0034] In the embodiment of the present application, the third diode D3 reduces the damage to the operational amplifier F caused by a voltage exceeding the voltage value that the operational amplifier F can withstand.

[0035] Optionally, referring to Figure 2, in some embodiments, the overcurrent protection sub-circuit 20 also includes a first power supply U1 and a protection diode D4; the first power supply U1 is respectively connected to the negative electrode of the protection diode D4 and the collector of the insulated gate bipolar transistor 50, and the positive electrode of the protection diode D4 is connected to the emitter of the insulated gate bipolar transistor 50; the first power supply U1 is used to power the insulated gate bipolar transistor 50; the protection diode D4 is used to protect the insulated gate bipolar transistor 50 from voltage breakdown.

[0036] It should be noted that the protection diode D4 is a diode.

[0037] Specifically, in some embodiments, the supply voltage value of the first power supply U1 may be 400V.

[0038] In the embodiment of the present application, the insulated gate bipolar transistor 50 is powered by the first power supply U1, and the protection diode D4 protects the insulated gate bipolar transistor 50 from voltage breakdown, thereby reducing the possibility of the insulated gate bipolar transistor 50 being broken down by abnormal voltage and causing the insulated gate bipolar transistor 50 to be abnormal.

[0039] Optionally, referring to Figure 3, in some embodiments, the switch control molecular circuit 21 also includes a second power supply U2; the second power supply U2 is connected to the positive electrode of the operational amplifier F, and the negative electrode of the operational amplifier F is connected to the third ground terminal G3; the second power supply U2 is used to power the operational amplifier F.

[0040] Specifically, in some embodiments, the supply voltage value of the second power supply U2 may be 3.3V.

[0041] In the embodiment of the present application, the operational amplifier F is powered by the second power supply U2 so that the operational amplifier F can operate normally.

[0042] Optionally, referring to Figure 3, in some embodiments, the clamping sub-circuit 40 includes a first diode D1 and a second diode D2; the anode of the first diode D1 is connected to the first ground terminal G1, the cathode of the first diode D1 is connected to the second ground terminal G2, the anode of the second diode D2 is connected to the second ground terminal G2, and the cathode of the second diode D2 is connected to the first ground terminal G1; the first diode D1 and the second diode D2 cooperate to ensure that the voltage difference between the first ground terminal G1 and the second ground terminal G2 is at the preset difference when the insulated gate bipolar transistor 50 is turned off.

[0043] It should be noted that when the IGBT 50 is turned off, the current flowing through the gate of the IGBT 50 flows through the third MOS transistor M3 into the first ground terminal G1, releasing energy from the gate of the IGBT 50 and enabling the IGBT 50 to turn off more quickly. Since the first ground terminal G1 is a low-voltage, low-current ground terminal, while the second ground terminal G2 is a high-voltage, high-current ground terminal, a voltage difference is generated between the first ground terminal G1 and the second ground terminal G2. The clamping sub-circuit 40 reduces the possibility of the IGBT 50 being erroneously turned on due to this voltage difference.

[0044] In the embodiment of the present application, the first diode D1 cooperates with the second diode D2, so that when the insulated gate bipolar transistor 50 is turned off, the voltage difference between the first ground terminal G1 and the second ground terminal G2 is within the preset difference. Since the preset difference is less than the turn-on voltage value of the insulated gate bipolar transistor 50, the possibility of the insulated gate bipolar transistor 50 being abnormal due to the voltage difference between the first ground terminal G1 and the second ground terminal G2 is reduced.

[0045] Optionally, in some embodiments, the length of the line between the first ground terminal G1 and the second ground terminal G2 is less than a length threshold, which is set based on personnel experience. By ensuring that the length of the line between the first ground terminal G1 and the second ground terminal G2 is less than the length threshold, the possibility of the insulated gate bipolar transistor 50 being erroneously turned on due to the voltage difference between the first ground terminal G1 and the second ground terminal G2 can be reduced.

[0046] Optionally, referring to Figure 3, in some embodiments, the voltage stabilizing sub-circuit 30 includes a fourth resistor R4; the first end of the fourth resistor R4 is connected to the gate of the insulated gate bipolar transistor 50, and the second end of the fourth resistor R4 is connected to the second ground terminal G2; the fourth resistor R4 is used to reduce the LC oscillation voltage generated by the gate of the insulated gate bipolar transistor 50, so that the gate of the insulated gate bipolar transistor 50 obtains a stable voltage.

[0047] In the embodiment of the present application, the LC oscillation voltage generated by the gate of the insulated gate bipolar transistor 50 is reduced by the fourth resistor R4, so that the gate of the insulated gate bipolar transistor 50 obtains a stable voltage, thereby reducing the possibility of abnormality of the insulated gate bipolar transistor 50 caused by the LC oscillation voltage generated by the gate of the insulated gate bipolar transistor 50.

[0048] Optionally, referring to Figure 4, in some embodiments, in the equivalent circuit formed by the voltage stabilizing sub-circuit 30 and the insulated gate bipolar transistor 50, the LCR composed of the fourth resistor R4, the stray inductance L of the gate of the insulated gate bipolar transistor 50, and the parasitic capacitance C of the insulated gate bipolar transistor 50 can be used to reduce the LC oscillation voltage of the gate of the insulated gate bipolar transistor 50 caused by the stray inductance L of the gate of the insulated gate bipolar transistor 50 and the parasitic capacitance C of the insulated gate bipolar transistor 50, thereby improving the stability of the insulated gate bipolar transistor 50.

[0049] Optionally, referring to Figure 3, in some embodiments, the voltage stabilizing sub-circuit 30 further includes a TVS tube ZD; the first end of the TVS tube ZD is connected to the gate of the insulated gate bipolar transistor 50, and the second end of the TVS tube ZD is connected to the second ground terminal G2; the TVS tube ZD is used to control the insulated gate bipolar transistor 50 to be turned off when the voltage difference between the gate and the source of the insulated gate bipolar transistor 50 is greater than a preset voltage threshold.

[0050] It should be noted that the TVS diode ZD is a transient voltage suppressor diode (TVS). When the voltage difference between the gate and source of the insulated gate bipolar transistor 50 is greater than a preset voltage threshold, the TVS diode ZD conducts in reverse, thereby reducing the possibility that the voltage difference between the gate and source of the insulated gate bipolar transistor 50 will cause the insulated gate bipolar transistor 50 to break down.

[0051] In the embodiment of the present application, when the voltage difference between the gate and source of the insulated gate bipolar transistor 50 is greater than a preset voltage threshold, the TVS tube ZD controls the insulated gate bipolar transistor 50 to be turned off, thereby reducing the possibility that the voltage difference between the gate and source of the insulated gate bipolar transistor 50 will cause damage to the insulated gate bipolar transistor 50.

[0052] Optionally, referring to Figure 3, in some embodiments, the control subcircuit 10 includes a third power supply U3, a second MOS transistor M2, a third MOS transistor M3, and an inverter S; the source of the second MOS transistor M2 is connected to the drain of the third MOS transistor M3, the drain of the second MOS transistor M2 is connected to the third power supply U3, the source of the third MOS transistor M3 is connected to the first ground terminal G1, the gate of the third MOS transistor M3 is connected to the output terminal of the inverter S, and the input terminal of the inverter S is connected to the gate of the second MOS transistor M2; the gate of the insulated gate bipolar transistor 50 is respectively connected to the source of the second MOS transistor M2 and the drain of the third MOS transistor M3.

[0053] Specifically, in some embodiments, the second MOS transistor M2 may be a PMOS transistor, and the third MOS transistor M3 may be a PMOS transistor; the supply voltage value of the third power supply U3 may be 15V.

[0054] It should be noted that the control input terminal P for inputting a PWM signal is connected to the gate of the second MOS transistor M2 , the input terminal of the inverter S, and the drain of the first MOS transistor respectively.

[0055] In the embodiment of the present application, the third power supply U3, the second MOS transistor M2, the third MOS transistor M3, and the inverter S can be used to control the insulated gate bipolar transistor 50 to be turned on or off in response to a control instruction.

[0056] Optionally, referring to Figure 3, in some embodiments, the third power supply U3 is used to power the second MOS transistor M2 and the third MOS transistor M3; the second MOS transistor M2 and the third MOS transistor M3 cooperate with the inverter S to receive the control instruction through the gate of the second MOS transistor M2 and the input end of the inverter S, and when the control instruction is at a high level, control the second MOS transistor M2 to be turned on and the third MOS transistor M3 to be turned off, so that the insulated gate bipolar transistor 50 is turned on; and when the control instruction is at a low level, control the second MOS transistor M2 to be turned off and the third MOS transistor M3 to be turned on, so as to control the insulated gate bipolar transistor 50 to be turned off.

[0057] In the embodiment of the present application, the second MOS transistor M2 and the third MOS transistor M3 are powered by the third power supply U3. The second MOS transistor M2 and the third MOS transistor M3 cooperate with the inverter S to receive a control instruction through the gate of the second MOS transistor M2 and the input end of the inverter S. When the control instruction is at a high level, the second MOS transistor M2 is turned on and the third MOS transistor M3 is turned off, so that the insulated gate bipolar transistor 50 is turned on. When the control instruction is at a low level, the second MOS transistor M2 is turned off and the third MOS transistor M3 is turned on, so that the insulated gate bipolar transistor 50 is turned off, thereby achieving control of turning the insulated gate bipolar transistor 50 on or off in response to the control instruction.

[0058] In summary, in the embodiment of the present application, the insulated gate bipolar transistor is turned on or off by controlling the control sub-circuit in response to the control instruction, thereby realizing the turning on and off of the insulated gate bipolar transistor. The overcurrent protection subcircuit collects the current value of the IGBT and, when the current value is greater than a preset current threshold, causes the control subcircuit to turn off the IGBT to reduce damage to the IGBT caused by currents greater than the current threshold. The voltage stabilization subcircuit reduces the LC oscillation voltage generated by the IGBT so that the IGBT obtains a stable voltage. The clamping subcircuit ensures that, when the IGBT is turned off, the voltage difference between the first ground terminal of the control subcircuit and the second ground terminal of the IGBT is within a preset value. The preset value is less than the turn-on voltage of the IGBT to reduce the possibility of abnormal turn-on of the IGBT due to the voltage difference between the first ground terminal and the second ground terminal being greater than the turn-on voltage of the IGBT. This reduces the possibility of abnormal turn-on of the IGBT due to abnormal voltage and abnormal current in the drive circuit of the IGBT, thereby solving the problem in the prior art of abnormal turn-on of the IGBT due to abnormal voltage and abnormal current in the drive circuit of the IGBT.

[0059] It should be noted that, in this article, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, it should be noted that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved. For example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0060] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A driving circuit of an insulated gate bipolar transistor, characterized in that: include: Control subcircuit, overcurrent protection subcircuit, voltage stabilization subcircuit, clamping subcircuit, insulated gate bipolar transistor; The control subcircuit is connected to the overcurrent protection subcircuit, the voltage stabilization subcircuit, and the clamping subcircuit respectively, and the edge-gate bipolar transistor is connected to the overcurrent protection subcircuit, the voltage stabilization subcircuit, the clamping subcircuit, and the control subcircuit respectively; The control subcircuit is used to control the insulated gate bipolar transistor to be turned on or off in response to a control instruction; the overcurrent protection subcircuit is used to collect the current value of the insulated gate bipolar transistor, and when the current value is greater than a preset current threshold, the control subcircuit turns off the insulated gate bipolar transistor; the voltage stabilization subcircuit is used to reduce the LC oscillation voltage generated by the insulated gate bipolar transistor so that the insulated gate bipolar transistor obtains a stable voltage; the clamping subcircuit is used to make the voltage difference between the first ground terminal of the control subcircuit and the second ground terminal of the insulated gate bipolar transistor be at a preset difference when the insulated gate bipolar transistor is turned off, and the preset difference is less than the on-voltage value of the insulated gate bipolar transistor.

2. The driving circuit of the insulated gate bipolar transistor according to claim 1, characterized in that: The overcurrent protection subcircuit includes a current sampling device, a switch control subcircuit, and a switch device; The current sampling device is connected to the switch control molecular circuit and the insulated gate bipolar transistor respectively, the switch control molecular circuit is connected to the switch device, and the switch device is connected to the control sub-circuit and the first ground terminal respectively; The current sampling device is used to collect the current value; The switch control molecular circuit is used to generate a control signal when the current value is greater than a preset current threshold; The switch device is configured to be turned on in response to the control signal, so that the control subcircuit turns off the insulated gate bipolar transistor.

3. The driving circuit of the insulated gate bipolar transistor according to claim 2, characterized in that: The current sampling device is a current sampling resistor, the switch device is a first MOS tube, and the switch control molecular circuit includes a first resistor, a second resistor, a third resistor, and an operational amplifier; The first end of the first resistor is connected to the first end of the current sampling resistor, the second end of the first resistor is connected to the non-inverting input terminal of the operational amplifier, the second end of the first resistor is connected to the first end of the second resistor, and the second end of the second resistor is connected to the output terminal of the operational amplifier; the first end of the third resistor is connected to the second end of the current sampling resistor, and the second end of the third resistor is connected to the inverting input terminal of the operational amplifier; The first end of the current sampling resistor is connected to the emitter of the insulated gate bipolar transistor, and the emitter of the insulated gate bipolar transistor is connected to the second ground terminal; the output end of the operational amplifier is connected to the gate of the first MOS transistor, the source of the first MOS transistor is connected to the first ground terminal, and the drain of the first MOS transistor is connected to the control subcircuit.

4. The driving circuit of the insulated gate bipolar transistor according to claim 3, characterized in that: The current sampling resistor is used to collect the current value output by the emitter of the insulated gate bipolar transistor; The first resistor, the second resistor, and the third resistor cooperate with the operational amplifier to generate the control signal when the current value is greater than a preset current threshold, and the control signal is used to make the voltage difference between the gate and the source of the first MOS tube greater than the turn-on voltage value of the first MOS tube; The first MOS transistor is used to be turned on in response to the control signal, so that the control subcircuit stops receiving the control instruction, thereby turning off the insulated gate bipolar transistor when the control subcircuit does not receive the control instruction.

5. The driving circuit of the insulated gate bipolar transistor according to claim 3, characterized in that: The switch control molecular circuit also includes a third diode; An anode of the third diode is connected to the first end of the third resistor, and a cathode of the third diode is connected to the inverting input end of the operational amplifier.

6. The driving circuit of the insulated gate bipolar transistor according to claim 2, characterized in that: The overcurrent protection subcircuit also includes a first power supply and a protection diode; The first power supply is connected to the cathode of the protection diode and the collector of the insulated gate bipolar transistor respectively, and the anode of the protection diode is connected to the emitter of the insulated gate bipolar transistor; The first power supply is used to supply power to the insulated gate bipolar transistor; The protection diode is used to protect the insulated gate bipolar transistor from voltage breakdown.

7. The driving circuit of the insulated gate bipolar transistor according to claim 3, characterized in that: The switch control molecular circuit also includes a second power supply; The second power supply is connected to the positive electrode of the operational amplifier, and the negative electrode of the operational amplifier is connected to the third ground terminal; The second power supply is used to supply power to the operational amplifier.

8. The driving circuit of the insulated gate bipolar transistor according to claim 1, characterized in that: The clamping subcircuit includes a first diode and a second diode; The anode of the first diode is connected to the first ground terminal, the cathode of the first diode is connected to the second ground terminal, the anode of the second diode is connected to the second ground terminal, and the cathode of the second diode is connected to the first ground terminal; The first diode cooperates with the second diode to ensure that the voltage difference between the first ground terminal and the second ground terminal is at the preset difference when the insulated gate bipolar transistor is turned off.

9. The driving circuit of the insulated gate bipolar transistor according to claim 1, characterized in that: The voltage stabilizing subcircuit includes a fourth resistor; A first end of the fourth resistor is connected to the gate of the insulated gate bipolar transistor, and a second end of the fourth resistor is connected to the second ground end; The fourth resistor is used to reduce the LC oscillation voltage generated by the gate of the insulated gate bipolar transistor, so that the gate of the insulated gate bipolar transistor obtains a stable voltage.

10. The driving circuit of the insulated gate bipolar transistor according to claim 9, characterized in that: The voltage stabilizing subcircuit also includes a TVS tube; The first end of the TVS tube is connected to the gate of the insulated gate bipolar transistor, and the second end of the TVS tube is connected to the second ground end; The TVS tube is used to control the insulated gate bipolar transistor to turn off when the voltage difference between the gate and the source of the insulated gate bipolar transistor is greater than a preset voltage threshold.

11. The driving circuit of the insulated gate bipolar transistor according to claim 1, characterized in that: The control subcircuit includes a third power supply, a second MOS tube, a third MOS tube, and an inverter; The source of the second MOS tube is connected to the drain of the third MOS tube, the drain of the second MOS tube is connected to the third power supply, the source of the third MOS tube is connected to the first ground terminal, the gate of the third MOS tube is connected to the output terminal of the inverter, and the input terminal of the inverter is connected to the gate of the second MOS tube; the gate of the insulated gate bipolar transistor is respectively connected to the source of the second MOS tube and the drain of the third MOS tube.

12. The driving circuit of the insulated gate bipolar transistor according to claim 11, characterized in that: The third power supply is used to supply power to the second MOS tube and the third MOS tube; The second MOS tube and the third MOS tube cooperate with the inverter to receive the control instruction through the gate of the second MOS tube and the input end of the inverter, and when the control instruction is at a high level, control the second MOS tube to be turned on and the third MOS tube to be turned off so that the insulated gate bipolar transistor is turned on, and when the control instruction is at a low level, control the second MOS tube to be turned off and the third MOS tube to be turned on so as to control the insulated gate bipolar transistor to be turned off.

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