Power single transistor, power module, and electronic device

Abstract

The present application discloses a power single transistor, a power module, and an electronic device. The power single transistor comprises a packaging body, a chip assembly, and a metal bottom plate, the chip assembly is provided in the packaging body, and the chip assembly has a first pin and a second pin which extend out of the packaging body to the outside; the first pin serves as a first electrode, there is at least one second pin, and the second pin serves as a second electrode, or the first pin and the second pin serve as the same electrode; the metal bottom plate is provided on one side of the packaging body, and the metal bottom plate is connected to the chip assembly to serve as a third electrode; the width of the first pin is larger than that of the second pin, the first pin is connected to the chip assembly by means of a plurality of first binding wires, the second pin is connected to the chip assembly by means of a second binding wire, and a binding area of the first pin is larger than a binding area of the second pin.

Description

Power tubes, power modules and electronic equipment

[0001] This application claims priority to Chinese patent application No. 202323321915.6 filed on December 6, 2023, and No. 202311666025.0, all of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of electronic devices, and in particular to a power single tube, a power module and an electronic device. Background Art

[0003] In power electronics conversion topologies, commonly used power devices include potted power modules in standard packages and plug-in power transistors. Plug-in power transistors are widely used due to their high technological maturity, high yield, competitive margins for packaging and testing plants, and low packaging and testing costs. Among existing plug-in power transistors, IGBTs and MOSFETs are the most common.

[0004] However, when existing power tubes such as IGBT power tubes and MOSFET power tubes are used in power modules, all the pins of the power tubes are generally soldered on the same circuit board. As a result, when used in high-power scenarios, due to insufficient current-carrying capacity of the power tubes, when the power tubes are electrically connected into a circuit topology by connecting multiple tubes in parallel, not only is the circuit layout difficult, but the problem of large occupied area is also easy to occur due to the large number of power tubes used, resulting in a higher overall cost of the power module and an inability to improve the power density of the entire machine. Technical issues

[0005] The main purpose of this application is to provide a power single tube, a power module and an electronic device to solve the problems of difficult circuit layout, high overall cost of the power module and inability to improve the power density of the whole machine due to insufficient current carrying capacity of the power single tube. Technical Solutions

[0006] To achieve the above objectives, the present application provides a single power tube, which includes:

[0007] Encapsulation;

[0008] A chip assembly is provided in a package, the chip assembly having a first pin and a second pin extending from the package; wherein the first pin serves as a first electrode, the second pin has at least one and at least one of the second pins serves as a second electrode, or the first pin and the second pin serve as the same electrode;

[0009] A metal base plate is provided on one side of the package body, and the metal base plate is connected to the chip assembly to serve as a third electrode;

[0010] The width of the first pin is greater than that of the second pin. The first pin is connected to the chip component through multiple first binding wires, and the second pin is connected to the chip component through a second binding wire. The binding area of ​​the first pin is greater than that of the second pin.

[0011] In one embodiment, the binding area of ​​the first pin and the binding area of ​​the second pin are taken as the total binding area, and the area of ​​the binding area of ​​the first pin accounts for 65-75% of the total binding area.

[0012] In one embodiment, the binding area of ​​the first pin is provided with a plurality of first connection points, and the chip component is connected to the plurality of first connection points in a one-to-one correspondence via a plurality of first binding wires.

[0013] In one embodiment, when the first pin serves as the first electrode and the second pin has at least one second electrode, a portion of one of the first pin and the second pin extending outside the package is bent toward a side surface of the metal base plate and is flush with the third electrode; and a portion of the other pin extending outside the package extends away from the metal base plate.

[0014] When the first pin and the second pin serve as the same electrode, portions of the first pin and the second pin extending out of the package body are bent toward a side surface of the metal base plate and are arranged flush with the third electrode.

[0015] In one embodiment, there are a plurality of the second pins, and at least one of the plurality of second pins serves as a fourth electrode.

[0016] In one embodiment, the chip assembly includes an IGBT chip and an FRD chip connected to each other, the first pin and the second pin are electrically connected to the IGBT chip respectively, the first electrode is a power emitter, the second electrode is a gate, the third electrode is a collector, and the fourth electrode is a Kelvin emitter.

[0017] In one embodiment, the chip assembly includes a diode chip, the first pin and the second pin are respectively connected to the diode chip and serve as an anode, and the third electrode is a cathode.

[0018] To achieve the above objectives, the present application also provides a power module, which includes a circuit board assembly and at least one power single tube as described above, at least one of the power single tubes is arranged on the circuit board assembly and forms a preset circuit topology through electrical connection.

[0019] In one embodiment, the circuit board assembly includes an insulating metal plate, which includes a heat dissipation base plate, an insulating layer and a circuit layer. The insulating layer is arranged on the heat dissipation base plate, and the circuit layer is arranged on the insulating layer. There are multiple power tubes, and the multiple power tubes are arranged on the insulating metal plate and are electrically connected through the circuit layer to form a preset circuit topology.

[0020] In one embodiment, the preset circuit topology includes at least one of a rectifier topology and an inverter topology; wherein the inverter topology includes a half-bridge inverter topology and a full-bridge inverter topology.

[0021] In one embodiment, when multiple power tubes are electrically connected to form a preset half-bridge inverter topology, the multiple power tubes include a first IGBT power tube and a second IGBT power tube that are discretely arranged, and the collector of the first IGBT power tube is electrically connected to the power emitter of the second IGBT power tube through the circuit layer.

[0022] In one embodiment, when multiple power tubes are electrically connected to form a preset full-bridge inverter topology, the multiple power tubes include multiple IGBT power tubes connected in a matrix shape, and the collectors of some of the multiple IGBT power tubes are connected to each other in the first row through the circuit layer, and the other parts of the multiple IGBT power tubes are connected in the second row, and the power emitters of the multiple IGBT power tubes in the first row are connected one-to-one with the collectors of the multiple IGBT power tubes in the second row through the circuit layer.

[0023] In one embodiment, when multiple power single tubes are electrically connected to form a preset rectifier bridge topology, the multiple power single tubes include multiple first diode single tubes connected in a matrix shape, the anodes of some of the multiple first diode single tubes are connected to each other in a first row through the circuit layer, and the other parts of the multiple first diode single tubes are connected in a second row, and the cathodes of the multiple first diode single tubes in the first row are connected one-to-one with the anodes of the multiple first diode single tubes in the second row through the circuit layer.

[0024] In one embodiment, the multiple power tubes also include an IGBT power tube and a second diode tube, the anode of the second diode tube is connected to the collector of the IGBT power tube through the circuit layer, and the power emitter of the IGBT power tube is connected to the anodes of the multiple first diode tubes arranged in the first row through the circuit layer.

[0025] To achieve the above objectives, the present application also provides an electronic device, which includes the power module as described above. Beneficial effects

[0026] Compared with the prior art, this application has the following beneficial effects:

[0027] By arranging a metal base plate on one side of the package body and connecting the metal base plate to the chip component as a third electrode, the circuit layout can be simplified, the number of pins and wiring can be reduced, and the assembly difficulty can be reduced. By increasing the area of ​​the metal base plate to be suitable for connecting chip components with higher power and improving the density of power single tubes, the number of power single tubes connected in parallel in high-power application scenarios can be reduced, thereby reducing costs. By connecting the chip component and the metal base plate to form a third electrode, the space occupied by the third electrode can be reduced, and the spacing between the first pin and the second pin, the width of the first pin, and the area of ​​the area where the binding wire can be bound can be increased. In order to further improve the current carrying capacity of the power single tube, a first The pins are connected to the chip assembly through multiple first binding wires, and the second pins are connected to the chip assembly through second binding wires. By increasing the number of first binding wire connections and setting the binding area of ​​the first pin to be larger than the binding area of ​​the second pin, the safety of the power tube and the power module is further optimized, and they are suitable for use as high-voltage devices, reducing the need for additional protective treatment during application and improving the overall power density; by increasing the area of ​​the metal base plate, the heat dissipation area can also be increased, the service life of the power tube can be extended, and the problem of derating of the power tube during use due to insufficient heat dissipation performance can be avoided to prevent overheating failure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0029] FIG1 is a perspective view of an embodiment of a single power tube of the present application;

[0030] FIG2 is a schematic structural diagram of an embodiment of a single power tube of the present application;

[0031] FIG3 is a schematic structural diagram of an embodiment of a single power tube of the present application from another perspective;

[0032] FIG4 is a schematic structural diagram of an embodiment of a single power tube of the present application from another perspective;

[0033] FIG5 is a perspective view of another embodiment of a single power tube of the present application;

[0034] FIG6 is a schematic structural diagram of another embodiment of a single power tube of the present application;

[0035] FIG7 is a schematic structural diagram of another embodiment of a single power tube of the present application from another perspective;

[0036] FIG8 is a schematic structural diagram of another embodiment of a single power tube of the present application from another perspective;

[0037] FIG9 is a schematic structural diagram of an embodiment of a power module of the present application;

[0038] FIG10 is a schematic structural diagram of another embodiment of the power module of the present application;

[0039] FIG11 is a schematic structural diagram of another embodiment of the power module of the present application.

[0040] Description of Figure Numbers:

[0041] Reference number name Reference number name 10 Power single tube 213 Diode chip 100 Package 221 Power emitter 200 Chip assembly 222 Kelvin emitter 201 First pin 223 Gate 202 Second pin 231 Anode 2031 First binding wire 300 Metal base plate 2032 Second binding wire 410 Insulated metal plate 2033 First connection point 4101 Mounting hole 2034 Second connection point 420 Circuit layer 204 Third electrode 4301 Copper busbar 211 IGBT chip 4302 Pin 212 FRD chip

[0042] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. Modes for Carrying Out the Invention

[0043] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0044] It should be noted that if all directional indications in the embodiments of the present application are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture, if the specific posture changes, the directional indication will also change accordingly.

[0045] If the descriptions of "first", "second", etc. in this application are only used for descriptive purposes, and cannot be understood as indicating or implying their relative importance, or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. If the description of "A and / or B" is involved in this application, it means that it includes solution A or solution B, or includes solution A and solution B. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in this field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0046] In power electronics conversion topologies, commonly used power devices include potted power modules in standard packages and plug-in power transistors. Plug-in power transistors are widely used due to their high technological maturity, high yield, competitive margins for packaging and testing plants, and low packaging and testing costs. Among existing plug-in power transistors, IGBTs and MOSFETs are the most common.

[0047] However, when existing power tubes such as IGBT power tubes and MOSFET power tubes are used in power modules, all the pins of the power tubes are generally soldered on the same circuit board. As a result, when used in high-power scenarios, due to insufficient current-carrying capacity of the power tubes, when the power tubes are electrically connected into a circuit topology by connecting multiple tubes in parallel, not only is the circuit layout difficult, but the problem of large occupied area is also easy to occur due to the large number of power tubes used, resulting in a higher overall cost of the power module and an inability to improve the power density of the entire machine.

[0048] Taking a typical plastic-encapsulated single-transistor package as an example, plug-in packages like the TO247-3 and TO247plus-3 require leads for the gate G, collector C (called the drain for MOS transistors), and emitter E (called the source for MOS transistors). However, because the emitter E is a common part of the power and control circuits, the parasitic inductance of the emitter E pin itself and the power circuit current cause the effective voltage from the gate to the emitter to decay during turn-on and turn-off. This decay prolongs the commutation time of the power transistor, resulting in higher switching losses. Plug-in packages like the TO247-4 and TO247plus-4 require leads for the collector C (called the drain for MOS transistors), emitter E (called the source for MOS transistors), Kelvin emitter (Kelvin source for MOS transistors), and gate G. The additional pins, the Kelvin emitter, connect to the emitter. The Kelvin emitter is used to connect to the gate driver to protect the power transistor from voltage decay in the power circuit and achieve lower switching losses.

[0049] However, the typical plastic-encapsulated single-tube transistors mentioned above have a relatively small spacing between the package collector C and emitter E pins. When used as high-voltage devices, the spacing between the pins soldered to the circuit board assembly is further reduced, resulting in the need for adhesive protection to prevent pin sparking or breakdown. Furthermore, the small cross-sectional area of ​​the package collector C plug-in pins and emitter E plug-in pins limits the area available for bonding the emitter E pin, further restricting the current-carrying capacity of the power single-tube transistor.

[0050] In order to solve the defects of the prior art, the present application provides a power single tube, a power module and an electronic device. The power single tube includes a package body 100, a chip assembly 200 and a metal base plate 300.

[0051] 1 to 8 , a chip assembly 200 is disposed within a package 100 and includes a first pin 201 and a second pin 202 extending from the package 100. The first pin 201 serves as a first electrode, and the second pin 202 includes at least one second pin and at least one of the second pins serves as a second electrode, or the first pin 201 and the second pin 202 serve as the same electrode. A metal base plate 300 is disposed on one side of the package 100 and is connected to the chip assembly 200 to serve as a third electrode 204. Specifically:

[0052] The width of the first pin 201 is greater than that of the second pin 202 . The first pin 201 is connected to the chip component via a plurality of first binding wires 2031 . The second pin 202 is connected to the chip component via a second binding wire 2032 . The binding area of ​​the first pin 201 is greater than that of the second pin 202 .

[0053] In some embodiments, the package 100 is provided with a lead frame, which includes a chip carrier area. The chip carrier area is used to accommodate the chip assembly 200 and the metal base plate 300. The chip assembly 200 is provided on one side of the metal base plate 300. The chip assembly 200 is provided with pins on at least one side corresponding to the chip carrier area. The pins are led out of the package 100 through the chip carrier area. The package 100 has an encapsulation layer made of resin or other materials. The encapsulation layer is provided on at least one side of the lead frame to form the package 100. The portion of the metal base plate 300 connected to the chip assembly 200 that is exposed from the encapsulation layer is used to form the third electrode 204. Specifically, a connecting frame, welding position, etc. can be provided on the metal base plate 300 for connecting the chip assembly 200, and wiring can be arranged on the metal base plate 300 corresponding to the chip assembly 200. The metal base plate 300 can be a copper plate, an aluminum plate, or a connecting plate made of other materials with conductive and heat dissipating properties.

[0054] In some embodiments, the chip assembly 200 includes one or more chips, and the chip carrier area is provided with one or more accommodating areas, each of which is used to accommodate the chip. Specifically, the number of accommodating areas included in the chip carrier area can be set corresponding to the number of chips required for the power single tube 10.

[0055] By placing the metal base plate 300 on one side of the package body 100 and connecting the metal base plate 300 to the chip assembly 200 as the third electrode 204, the circuit layout can be simplified, the number of pins and wiring can be reduced, and the assembly difficulty can be reduced. By increasing the area of ​​the metal base plate 300 to accommodate the connection of higher-power chip assemblies 200 and increase the density of power transistors 10, the number of power transistors 10 connected in parallel in high-power applications can be reduced, thereby reducing costs. By connecting the chip assembly 200 and the metal base plate 300 to form the third electrode 204, the space occupied by the third electrode 204 can be reduced, thereby increasing the spacing between the first pin 201 and the second pin 202, the width of the first pin 201, and the binding area of ​​the first binding wire 2031. By increasing the number of first binding wires 2031 and setting the binding area of ​​the first pin 201 larger than that of the second pin 202, the power density can be further improved, and the current carrying capacity and heat dissipation performance of the power transistor can be optimized.

[0056] In some embodiments, the heat dissipation area can be increased by increasing the area of ​​the metal base plate 300, thereby extending the service life of the power tube 10, thereby avoiding the problem of the power tube 10 needing to be derated during use due to insufficient heat dissipation performance to prevent overheating failure.

[0057] In the present application, the area of ​​the chip carrier region of the lead frame is increased to be suitable for welding chips with higher power, and the number of power single tubes 10 used in high-power application scenarios is reduced.

[0058] In one embodiment, a plurality of first connection points 2033 are defined in the binding region of the first pin 201 , and the chip assembly 200 is connected to the plurality of first connection points 2033 in a one-to-one correspondence via a plurality of first binding wires 2031 .

[0059] In some embodiments, the lead frame shown has a first side and a second side arranged vertically, and the first pin 201 and the second pin 202 of the chip component 200 extend from the first side of the lead frame to the outside of the first side of the package body 100. The metal base plate 300 and the chip component 200 are connected as the third electrode 204, which can reduce the number of pins extending outside the first side of the lead frame, and increase the spacing between the pins and the number of connections that can be made by the first binding wire 2031. The multiple first connection points 2033 of the first pin 201 are spaced apart along the first side of the lead frame. In this way, the size of the metal base plate 300 used can be increased to be suitable for connecting high-power chip components 200, so as to further improve the density of the power single tube 10, expand the applicable scenarios, and extend the service life.

[0060] It should be noted that the pins are independently configured. The number of first pins 201 shown can be one or more. At least one of the multiple first pins 201 is connected to the chip assembly 200 via multiple first connection points 2033. Specifically, the number of first connection points 2033 configured for each first pin can be three, four, five, or other multiples. A first bonding wire 2031 is configured for each first connection point 2033, connecting the first pin to the chip assembly via the corresponding multiple first bonding wires 2031. There is at least one second pin 202, and each second pin 202 has at least one second connection point 2034. A second bonding wire 2032 is configured for each second connection point 2034 of the second pin 202, connecting each second pin to the chip assembly 200 via the corresponding multiple second bonding wires 2032. The materials, shapes, and sizes of the first pin 201 and the second pins 202 may be the same or different. Specifically, the number of the first pins 201 and the second pins 202, the number of connection points in the binding area of ​​the first pin 201 and the binding area of ​​the second pin 202, the position of each connection point, etc. may be set according to the actual situation, and are not limited here.

[0061] In addition, due to the complex processing technology of existing power transistors, different lead frame designs are required when designing different transistors such as IGBT power transistors and diode transistors. In most cases, the bonding area of ​​the first pin 201 can only be set to be equal to or slightly larger than the bonding area of ​​the second pin 202, which limits the improvement of the current carrying capacity of the power transistor. In the embodiment of the present application, the package shown has a first side and a second side arranged vertically. The first pin 201 and the second pin 202 of the chip component extend outside the first side of the package body 100. The bonding area of ​​the first pin 201 and the bonding area of ​​the second pin 202 both extend along the first side of the package body 100. The bonding area of ​​the first pin 201 is provided with a plurality of first connection points 2033. The plurality of first connection points 2033 are spaced apart along the length direction of the bonding area of ​​the first pin 201. That is, the plurality of first connection points 2033 are spaced apart along the first side of the package body 100. The plurality of second connection points 2034 corresponding to the second pin 202 are independent and spaced apart. The metal base plate 300 is connected to the chip assembly 200 as the third electrode 204. By increasing the area of ​​the metal base plate 300 and planning the position of the chip assembly on the metal base plate 300, the binding area of ​​the first pin and the number of first connection points 2033 are further increased, thereby optimizing the heat dissipation performance and avoiding the need for additional protective treatment. In this way, different types of chip assemblies can be used to be suitable for processing into different types of power single tubes such as IGBT power single tubes and diode single tubes. By using the same lead frame design, different types of power single tubes 10 can be processed, effectively expanding the scope of application and reducing process difficulty and processing costs.

[0062] In some embodiments, in order to further improve the current-carrying capacity of the power single tube 10, the first pin 201 is connected to the chip component 200 through multiple first binding wires 2031, and the second pin 202 is connected to the chip component 200 through the second binding wire 2032. By increasing the number of connections of the first binding wires 2031 and setting the binding area of ​​the first pin 201 to be larger than the binding area of ​​the second pin 202, the safety of the power single tube 10 and the power module is further optimized, and it is suitable for use as a high-voltage device, reducing the need for additional protective treatment during application and improving the overall power density.

[0063] In some embodiments, the binding area of ​​the first pin 201 and the binding area of ​​the second pin 202 are taken as the total binding area, and the binding area of ​​the first pin 201 accounts for 65-75% of the total binding area.

[0064] In some embodiments, the first pin 201 and the second pin 202 extend out of the first side of the package body 100, and the sum of the binding area of ​​the first pin 201 and the binding area of ​​the second pin 202 is used as the total binding area. The binding area of ​​the first pin 201 shown accounts for 70% of the total binding area, which is used to further optimize the safety of the power tube 10 and the power module, improve the overall power density, and avoid the need for additional protective treatment during application.

[0065] Taking plug-in packages such as TO247-3, TO247plus-3, TO247-4, and TO247plus-4 as examples, since the pins of existing plug-in power single-tube packages are mostly set as plug-in pins, when assembling the plug-in package, it is necessary to first directly insert the plug-in power single-tube pins or bend them and then plug them into the circuit board assembly, and fix them by wave soldering process; apply mounting thermal grease and insulating thermal gasket on the surface of the aluminum radiator in sequence, and then apply thermal grease on the insulating thermal gasket, and then use screws to lock the plug-in power single tube and its fixed support on the radiator to realize the routing of the plug-in power single-tube package through the circuit board assembly.

[0066] When packaging existing plug-in power transistors into power modules, the pins of the plug-in power transistors must be inserted into the circuit board assembly and then soldered to the circuit board assembly using solder paste reflow soldering. This exacerbates the delamination problem between the plastic encapsulation material and the chip assembly, pins, first binding wires 2031, and second binding wires 2032 after the power transistor is packaged. This packaging method not only increases the failure risk of the plug-in power transistor and the power module, but also affects device reliability. Using thermal grease, insulating ceramic gaskets, and thermal grease to secure the plug-in power transistor to the heat sink not only results in high thermal resistance, but also can affect the locking connection between the plug-in power transistor's mounting bracket and the heat sink due to environmental interference such as vibration during assembly and use, affecting the heat dissipation of the transistor and even causing thermal failure, forcing the power transistor to be used at a reduced rating.

[0067] 1 to 4 , in some embodiments, the first pin 201 serves as the first electrode and the second pin 202 has at least one electrode serving as the second electrode. A portion of one of the first pin 201 and the second pin 202 extending outside the package body 100 is bent toward a side surface of the metal base plate 300 and is flush with the third electrode 204 ; a portion of the other pin extending outside the package body 100 extends in a direction away from the metal base plate 300 .

[0068] 5 to 8 , in some embodiments, when the first pin 201 and the second pin 202 serve as the same electrode, the portions of the first pin 201 and the second pin 202 extending outside the package body 100 are bent toward a side surface of the metal base plate 300 and are flush with the third electrode 204 .

[0069] In some embodiments, there is at least one first pin 201 and at least one second pin 202, and the portion of the first pin 201 and / or the second pin 202 extending outside the package body 100 is bent toward one side of the metal base plate 300, so that the portion of the first pin 201 and / or the second pin 202 can be used as a patch pin. The patch pin is bent toward one side of the metal base plate 300 and the end surface of one end extending out of the package body 100 is flush with the third electrode 204. The third electrode 204, at least a portion of the first pin 201 and the second pin 202 can be directly soldered and fixed on the circuit board assembly through reflow soldering when the success module is assembled, avoiding the problems of unstable connection, poor heat dissipation performance, and inability to process high-power devices caused by the need to fix the plug-in pins through thermal grease + insulating ceramic gasket + thermal grease + screw connection, etc., so as to realize automated production, simplify assembly difficulty and reduce manufacturing costs, improve assembly quality and reduce the occurrence of assembly quality accidents.

[0070] In some embodiments, the transmission of power flow can be achieved by using the chip pins as power pins, and the transmission of signal flow can be achieved by using the plug-in pins as signal pins. Specifically, when the secondary packaging success rate topology module is formed, the chip pins can be soldered and fixed on the circuit board assembly of the power module by reflow soldering, and the plug-in pins are set to be connected to the external drive circuit board assembly or other electrical equipment to transmit the signal flow. Such a setting can achieve thermal and electrical separation, optimize the heat dissipation performance, improve the reliability of the power single tube 10 and the power module, reduce the pressure of current-carrying heat dissipation, layout and wiring, and cost of the circuit board assembly when the success rate module is packaged, and enhance the anti-interference ability of the signal pin of the power single tube 10. Specifically, the end of the chip pin facing away from the chip assembly 200 can be set flush with the third electrode 204 according to actual conditions, and the plug-in pin can be set to a plug-in bent into 90° in the direction away from the metal base plate 300. The angle and size of the plug-in pin can be set according to actual conditions and are not limited here.

[0071] In some embodiments, when the power transistor 10 is used as an IGBT power transistor or other transistor capable of transmitting power and signal flows, the power transistor 10 has two or more electrodes for transmitting power and signal flows. When one of the electrodes is used as the first electrode and the other is used as the second electrode and / or other electrode, the first pin 201 can be used as the first electrode and the second pin 202 can be used as the second electrode or other electrode. Specifically, when the first pin 201 is used as the first electrode and the second pin 202 is used as the second electrode or other electrode, one of the first pin 201 and the second pin 202 is used as a power pin, with the portion extending outside the package 100 bent toward a side surface of the metal base plate 300 and flush with the third electrode 204, for use as a surface mount pin; the other is used as a signal pin, with the portion extending outside the package 100 extending away from the metal base plate 300, for use as an insert pin. When the power tube 10 is used as a diode tube or other tube that can be used to transmit power flow, the power tube 10 has an electrode for transmitting power flow. Specifically, the first pin 201 and the second pin 202 can be set as the same electrode. The parts of the first pin 201 and the second pin 202 extending outside the package body 100 are bent toward one side of the metal base plate 300 and are set flush with the third electrode 204 to be used as surface mount pins.

[0072] When the power tube 10 is repackaged into modules of various power topologies or processed and applied to various electrical equipment, the setting of the chip pins can improve the fixing method of the power tube 10 to directly solder the chip pins to the circuit board assembly through reflow soldering, avoiding the problems of low processing efficiency and finished product quality caused by the need for manual participation in the use of plug-in pins. In this way, the processing procedures can be simplified, automated manufacturing can be realized, and production costs can be reduced.

[0073] In one embodiment, there are multiple second pins 202, and at least one of the multiple second pins 202 further serves as a fourth electrode. Based on the above example, there is one or more first pins 201, and the first pin 201 serves as the first electrode. There are multiple second pins 202, and at least one of the multiple second pins 202 serves as the second electrode and at least one of the multiple second pins 202 serves as the fourth electrode. As a specific example, the portion of the first pin 201 extending outside the package 100 is bent toward a side surface of the metal base plate 300 and is flush with the third electrode 204; the portion of the second pin 202 extending outside the package 100 extends away from the metal base plate 300; or the portion of the second pin 202 extending outside the package 100 is bent toward a side surface of the metal base plate 300 and is flush with the third electrode 204; the portion of the first pin 201 extending outside the package 100 extends away from the metal base plate 300.

[0074] In some embodiments, taking the power transistor 10 as an IGBT power transistor or other transistor capable of transmitting power and signal flows as an example, the power transistor 10 has two or more electrodes for transmitting power and signal flows. Specifically, the first pin 201 can be configured as the first electrode, and at least one of the second pins 202 can be configured as the second electrode. Taking the power transistor 10 as an IGBT power transistor as an example, when the first electrode serves as the power emitter, the second electrode serves as the gate, and the third electrode serves as the collector, to prevent the effective voltage from the gate to the power emitter from being attenuated due to the combined effects of the power emitter parasitic inductance and the power loop current at the instants of turn-on and turn-off, thereby prolonging the commutation time of the power transistor, the fourth electrode can be a Kelvin emitter. By adding the fourth electrode as a Kelvin emitter connected to the emitter of the IGBT and to the gate driver, the impact of power loop voltage attenuation can be reduced, resulting in lower switching loss performance.

[0075] The power single tube 10 shown in this application can cover single tubes of different device types such as IGBT / MOSFET, Diode, etc. By adopting the same lead frame design, it is suitable for processing different types of power single tubes 10.

[0076] 1 to 4 , in one embodiment, when the power transistor 10 shown is an IGBT power transistor, the chip assembly includes an interconnected IGBT chip 211 and an FRD chip 212. The first pin 201 and the second pin 202 are electrically connected to the IGBT chip 211, respectively. The first electrode is a power emitter 221, the second electrode is a gate 223, the third electrode 204 is a collector, and the fourth electrode is a Kelvin emitter 222. Optionally, there is one first pin 201 and it serves as the power emitter, and there are two second pins 202 and they serve as the gate 223 and the Kelvin emitter 222, respectively. The collector and power emitter 221 of the IGBT power single tube are both surface mount pins, which are used to realize the connection or transmission of the module power flow when the power single tube 10 is successfully packaged into a module through secondary packaging, and realize the connection or transmission of the signal flow through the Kelvin emitter 222 and gate 223 of the IGBT power single tube. The positions of the first pin 201 and the two second pins 202 can be adjusted and set according to actual conditions. In addition, the number of the first pin 201 and the second pin 202 can also be set and adjusted according to actual conditions, which is not limited here.

[0077] Referring to Figures 5 to 8 , in another embodiment, when the power transistor 10 is a diode, the chip assembly 200 includes a diode chip 213. The first pin 201 and the second pin 202 are respectively connected to the diode chip 213 and serve as an anode 231. The third electrode 204 serves as a cathode. When the power transistor 10 is a diode, the anode 231 and cathode of the diode are both surface mount pins, which are used to connect or transmit module power flow when the power transistor 10 is repackaged into a power module.

[0078] In some embodiments, when the power single tube 10 is a diode single tube, the number of the first pin 201 is one, and the number of the second pin 202 is two or more; or, the number of the first pin 201 is two or more, and the number of the second pin 202 is one; the specific number of the first pin and the second pin of the power single tube 10 when it is a diode single tube can be set according to actual conditions, and is not limited here.

[0079] The existing assembly method of plug-in power single tubes is relatively cumbersome, and because it requires manual assembly, the assembly efficiency and assembly quality are low, and the manufacturing cost is high. Due to the low power density of plug-in power single tubes, multiple tubes need to be connected in parallel when used in high-power scenarios. The large number of parallel connections easily leads to a large area of ​​​​circuit board components and heat sinks, which cannot effectively improve the overall power density and heat dissipation performance. In addition, when this type of plug-in power single tube package is used in a power module, it is mostly necessary to weld all the pins of multiple single tubes together, resulting in cross-coupling of power flow and signal flow routing, and wiring difficulties. The power flow routing is complicated and cannot effectively dissipate heat, resulting in serious heating of the circuit board components. The signal flow routing such as the gate is also easily interfered by high voltage and large current changes, affecting the switching characteristics of the power single tube.

[0080] In order to further solve the defects of the prior art, referring to Figures 9 to 11, the present application also provides a power module, which includes a circuit board assembly and at least one power single tube 10 as in the above embodiment. At least one power single tube 10 is arranged on the circuit board assembly and is electrically connected to form a preset circuit topology.

[0081] In some embodiments, the chip component 200 of the power single tube 10 is connected to the metal base plate 300 to serve as the third electrode 204. At least part of the first pin 201 and the second pin 202 extending outside the package body 100 is bent toward one side of the metal base plate 300 and is arranged flush with the third electrode 204. By using at least part of the first pin 201 and the second pin 202 and the third electrode 204 as patch pins, the power single tube 10 is fixed to the circuit board assembly by reflow soldering when it is re-packaged into a power module. By applying thermal grease on the circuit board assembly and then assembling the power single tube 10 to the heat sink, the assembly process and processing difficulty can be reduced, the reliability of the overall structure can be improved, and the processing and assembly costs can be reduced. Such a configuration can also reduce the thermal resistance connected to the heat sink, improve the heat dissipation performance and reliability, and avoid the need for derating.

[0082] Through the setting of the above example, the power density of the power single tube 10 is improved. The power single tube 10 is soldered on the circuit board assembly of the power module by reflow soldering. By reducing the setting of connecting structures such as insulating ceramic gaskets, the layout of the circuit board assembly of the power module is made more compact. By reducing the number of parallel power single tubes, the area of ​​the driving circuit board and the radiator is reduced, thereby effectively reducing costs and improving the power density of the power module and the entire machine.

[0083] In one embodiment, a circuit board assembly includes an insulated metal plate 410, which includes a heat sink base, an insulating layer, and a circuit layer 420. The insulating layer is disposed on the heat sink base, and the circuit layer 420 is disposed on the insulating layer. The insulated metal plate 410 is constructed into an insulated metal substrate (IMS) to replace traditional copper-clad ceramic substrates such as DBC and AMB substrates. This achieves high thermal conductivity, high heat dissipation, and flexible wiring, reduces processing and assembly costs, and optimizes insulation and heat dissipation performance.

[0084] There are multiple power transistors, and the multiple power transistors 10 are arranged on the insulating metal plate 410 and are electrically connected through the circuit layer 420 to form a preset circuit topology.

[0085] In some embodiments, the preset circuit topology includes but is not limited to a rectifier topology and an inverter topology; wherein the inverter topology includes but is not limited to a half-bridge inverter topology and a full-bridge inverter topology.

[0086] In some embodiments, the metal base plate 300 of the power transistor 10 is connected to the chip assembly 200 as the third electrode 204. By increasing the area of ​​the metal base plate 300 to accommodate the connection of higher-power chip assemblies 200 and improving the density of the power transistors 10, the layout of the power transistors 10 on the circuit board assembly becomes more compact and reasonable. By reducing the number of power transistors 10 connected in parallel in high-power applications, the area of ​​the circuit board assembly and the heat sink is further reduced, thereby improving the power density of the entire device. SMD pins and plug-in pins are respectively arranged according to power flow and signal flow. Power flow is transmitted through the SMD pins, and signal flow is transmitted through the plug-in pins, achieving thermal and electrical separation, allowing the circuit board assembly to quickly dissipate heat generated by high current flow.

[0087] The plug-in pins of the power single tube 10 are used to connect to an external driver circuit board or other electrical equipment. When the power single tube 10 is secondary packaged into a power module, the side where the third electrode 204 is located is used as the lower side of the power module, and the side away from the third electrode 204 is used as the upper side of the power module. The plug-in pins can be connected to the driver circuit board or other electrical equipment located on the upper side of the power module or other locations outside the power module by welding or plugging. In this way, the wiring difficulty of the driver circuit board or other electrical equipment can be reduced, the current carrying and heat dissipation requirements of the power module and the difficulty of packaging processing can be reduced, the processing and manufacturing costs can be reduced, and the IGBT drive signal can be prevented from being affected by high-voltage and high-current signal interference affecting the actual use effect, thereby optimizing the overall performance, expanding the scope of application of the power single tube 10, and being suitable for processing a variety of power modules and power devices.

[0088] In some embodiments, the insulating layer shown can specifically be made of an insulating material with high thermal conductivity, the heat dissipation base can specifically be made of a copper plate, aluminum plate or a connecting plate made of other conductive metals with good heat dissipation, and the circuit layer 420 can specifically be a circuit component provided on the insulating layer through copper foil, aluminum wire, solder, jumper wire, etc., and wiring is performed on the insulating metal substrate through a layout and wiring design similar to a PCB and a production etching process to form a pad or a connecting circuit. Such a setting can improve the reliability and stability of the overall structure, and thermal and electrical separation is achieved by setting up surface mount pins and plug-in pins. Compared with conventional plug-in power single tubes, the application scheme of the power single tube and power module shown in this application has more cost advantages. The improvement of the structural layout can also effectively reduce the difficulty of processing and assembly, and improve the processing and assembly efficiency.

[0089] In some embodiments, mounting holes 4101 may be provided on the insulating metal plate 410 to assemble and connect the power module to different electrical equipment and tooling. The specific arrangement may depend on the actual arrangement of the circuit layer 420 of the circuit board assembly and the packaging form of the power module, which is not limited here.

[0090] In some embodiments, when multiple power single tubes 10 are electrically connected to form a preset inverter topology, solder paste can be first applied to the circuit layer 420 of the circuit board assembly, and the components of the power module such as the collector and power emitter 221 of the power single tube 10 are soldered to the circuit layer 420 of the circuit board assembly through reflow soldering according to the preset circuit topology. The signal flow is led out by the Kelvin emitter 222 and gate 223 of the high-power single tube 10 itself, and the power flow is led out by the newly added copper pillars, copper busbars 4301 or pins 4302 and other patch metal terminals.

[0091] In some embodiments, multiple power transistors 10 are arranged and electrically connected to form a preset inverter topology such as a half-bridge inverter topology or a full-bridge inverter topology. Heat dissipation is achieved by applying thermal grease to the bottom of the power module, that is, the side of the circuit board assembly away from the circuit layer, and then assembling the power module on a heat sink. Kelvin emitter 222, gate 223, and other plug-in pins are used as signal pins to connect to a driver circuit board or other electrical equipment located on the top side of the power module or elsewhere outside the power module. Power flow and signal flow are transmitted separately through surface mount pins and plug-in pins to achieve thermal and electrical separation. In addition, depending on actual conditions, when multiple power transistors 10 are electrically connected to form a preset inverter topology such as a half-bridge inverter topology or a full-bridge inverter topology, temperature detection components such as thermistors for detecting temperature and current detection components such as shunts for detecting current can also be integrated into the power module to achieve temperature detection and current detection functions. In some embodiments, leveraging the high thermal conductivity and flexible routing capabilities of insulated metal substrates (IMS), temperature sensing components such as thermistors and current sensing components such as shunts are integrated into power modules. Heat from these lossy heat-dissipating components, such as shunts, is quickly transferred to a heat sink via the IMS, achieving heat dissipation. The specific locations where the temperature sensing components and current sensing components are connected to the power module can be determined based on actual needs and are not limited here.

[0092] 9 , in some embodiments, when multiple power transistors 10 are electrically connected to form a preset half-bridge inverter topology, the multiple power transistors 10 include a first IGBT power transistor and a second IGBT power transistor, each of which is separately provided. The collector of the first IGBT power transistor is electrically connected to the power emitter 221 of the second IGBT power transistor via a circuit layer 420 , thereby forming a half-bridge inverter module. The collector of the first IGBT power tube is connected to the power emitter 221 of the second IGBT power tube through the circuit layer 420. The power emitter 221 of the first IGBT power tube is connected to the patch metal terminals such as the copper column, copper busbar 4301 or pin 4302 through the circuit layer 420. The collector of the second IGBT power tube is connected to the patch metal terminals such as the copper column, copper busbar 4301 or pin 4302 through the circuit layer 420, so as to lead out the power flow through the patch metal terminals and lead out the signal flow through the Kelvin emitter 222 and gate 223 of the first IGBT power tube and the second IGBT power tube.

[0093] In some embodiments, the insulating metal plate 410 may be configured to have a first side and a second side that are opposite to each other, with the first IGBT power transistor and the second IGBT power transistor being parallel to each other and facing opposite directions. The pins of the first IGBT power transistor are disposed toward the first side of the insulating metal plate 410, and the extended pins of the second IGBT power transistor are disposed toward the second side of the insulating metal plate 410. It should be noted that the first IGBT power transistor and the second IGBT power transistor may be arranged to be mirror-symmetrical, or the positions and orientations of the first IGBT power transistor and the second IGBT power transistor, the positions of the various patch metal terminals, etc., may be additionally configured and adjusted based on practical needs. Furthermore, patch metal terminals such as copper pillars, copper busbars 4301, or pins 4302 may be disposed at other locations on the insulating metal plate 410, and other patch connectors may be disposed corresponding to the patch metal terminals to achieve electrical connection with the circuit board and to lead out the power flow of the power module. The specific configuration may vary depending on practical needs and is not detailed here.

[0094] In some embodiments, temperature detection components such as thermistors and current detection components such as shunts may be provided on the constructed half-bridge inverter module. The positions of temperature detection components such as thermistors and current detection components such as shunts on the half-bridge inverter module may be set according to actual conditions and are not limited here.

[0095] 10 , in some embodiments, when multiple power transistors 10 are electrically connected to form a preset full-bridge inverter topology, the multiple power transistors 10 include multiple IGBT power transistors connected in a matrix, with collectors of some of the multiple IGBT power transistors connected to each other in a first row via a circuit layer 420, and other IGBT power transistors connected to each other in a second row. The power emitters 221 of the multiple IGBT power transistors in the first row are connected one-to-one with the collectors of the multiple IGBT power transistors in the second row via the circuit layer 420, thereby forming a three-phase full-bridge inverter module.

[0096] In some embodiments, to reduce wiring, multiple IGBT power transistors can be arranged with the same orientation. Specifically, there are six IGBT power transistors shown, three of which are connected in the first row, and the other three of which are connected in the second row. The collectors of the three IGBT power transistors in the first row are interconnected via a circuit layer 420. Specifically, surface mount metal terminals such as copper pillars, copper busbars 4301, or pins 4302 can be provided on the circuit layer 420 to direct power flow. The power emitters 221 of the three IGBT power transistors in the first row are connected one-to-one with the collectors of the three IGBT power transistors in the second row via the circuit layer 420. In practice, the power emitters 221 of the three IGBT power tubes in the second row are connected to patch metal terminals such as copper pillars, copper busbars 4301, or pins 4302 through the circuit layer 420, so that the signal flow is drawn through the Kelvin emitters 222 and gates 223 of the multiple IGBT power tubes, and the collectors of the IGBT power tubes in the second row are drawn through patch metal terminals such as copper busbars 4301 or pins 4302. Specifically, the position, orientation, and position of the patch metal terminals of each IGBT power tube can be further set and adjusted according to actual circumstances. In addition, patch metal terminals such as copper pillars, copper busbars 4301, or pins 4302 can be set at other positions on the insulating metal plate 410 to achieve electrical connection with the power tubes and draw out the power flow of the power module. The specific settings can be based on actual circumstances and are not detailed here.

[0097] In some embodiments, temperature detection components such as thermistors and current detection components such as shunts can also be set on the constructed three-phase full-bridge inverter module. The positions of temperature detection components such as thermistors and current detection components such as shunts on the three-phase full-bridge inverter module can be set according to actual conditions and are not limited here.

[0098] In some embodiments, when multiple power single tubes 10 are electrically connected to form a preset rectifier bridge topology, solder paste can be first applied to the circuit layer 420 of the circuit board assembly, and the components of the power module such as the anode 231 and cathode of the power single tube 10 can be soldered to the circuit layer 420 of the circuit board assembly through reflow soldering according to the preset circuit topology, and the power flow is led out to the external power terminal of the power module through newly added copper columns, copper busbars 4301 or pins 4302.

[0099] In some embodiments, a high-power diode or the like can be soldered onto a circuit board assembly through a reflow soldering process to form a complete three-phase uncontrolled rectifier circuit, namely, a three-phase rectifier bridge module.

[0100] Referring to FIG. 11 , in one embodiment, when multiple power transistors 10 are electrically connected to form a preset rectifier bridge topology, the multiple power transistors include multiple first diode transistors connected in a matrix. The anodes of some of the multiple first diode transistors are connected to each other in a first row via a circuit layer 420 , while the remaining multiple first diode transistors are connected to each other in a second row. The cathodes of the multiple first diode transistors in the first row are connected one-to-one with the anodes of the multiple first diode transistors in the second row via the circuit layer 420 , thereby forming a three-phase rectifier bridge module.

[0101] To achieve the braking function, the multiple power tubes 10 also include an IGBT power tube and a second diode tube. The anode of the second diode tube is connected to the collector of the IGBT power tube through the circuit layer 420, and the power emitter of the IGBT power tube is connected to the anodes of the multiple first diode tubes arranged in the first row through the circuit layer 420.

[0102] To reduce wiring, multiple first diode tubes can be arranged in the same direction. Specifically, there are six first diode tubes shown, three of the six first diode tubes are connected in the first row, and the other three of the six first diode tubes are connected in the second row. The anodes 231 of the three first diode tubes in the first row are interconnected with the power emitters 221 of the IGBT power tubes through the circuit layer 420, and the cathodes of the three first diode tubes in the first row are connected one-to-one with the anodes 231 of the three first diode tubes in the second row through the circuit layer 420. According to actual conditions, copper pillars, copper busbars 4301, or pins 4302 and other patch metal terminals can be set on the circuit layer 420 to lead out the power flow of the power module. In addition, copper pillars, copper busbars 4301, or pins 4302 and other patch metal terminals can be set at other positions of the insulating metal plate 410 according to actual conditions, and the positions of each power tube 10 and patch metal terminal can be adjusted. They will not be described in detail here.

[0103] In some embodiments, the power modules and the number of power modules used can be replaced to meet different device internal layering standards and improve reliability. Specifically, the type of power tubes used, the number of power tubes and the connection method between the power tubes can be adjusted according to actual conditions to electrically connect to the required circuit topology.

[0104] It should be noted that the power pins of the power single tube 10 shown in this application, such as the collector C pin, the power emitter 221 pin, the diode anode 231, the diode cathode, etc., are used as surface mount pins, and the signal pins such as the Kelvin emitter 222 and the gate 223 are used as plug-in pins. The combination is not limited to changes in package size, pin shape and position combination. The design of the power module based on the layout and wiring of the new high-power single tube 10 on a circuit board assembly such as an insulated metal substrate and secondary packaging is not limited to the number of power single tubes 10, nor is it limited to the topological forms such as half-bridge, three-phase full-bridge, ANPC, NPC1, TNPC, etc. formed by the connection. The above-mentioned transformations and combinations are all within the scope of the present application.

[0105] The present application also provides an electronic device, which includes a power module as described in any of the above embodiments and has the technical features of the power module in the above embodiments, and can at least achieve the beneficial effects in the implementation of the above power module. To avoid repetition, it will not be repeated here.

[0106] The above description is merely an optional embodiment of the present application and does not limit the patent scope of the present application. All equivalent structural transformations made using the contents of the present application specification and drawings under the inventive concept of the present application, or direct / indirect application in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A single power tube, wherein: The power single tube comprises: Encapsulation body; A chip component is arranged in a package body, and the chip component has a first pin and a second pin extending out of the package body; wherein the first pin serves as a first electrode, the second pin has at least one and at least one of the second pins serves as a second electrode, or the first pin and the second pin serve as the same electrode; A metal base plate, disposed on one side of the package body, the metal base plate being connected to the chip assembly to serve as a third electrode; The width of the first pin is greater than that of the second pin, the first pin is connected to the chip component through a plurality of first binding wires, the second pin is connected to the chip component through a second binding wire, and the binding area of ​​the first pin is greater than that of the second pin.

2. The power single tube according to claim 1, wherein: The binding area of ​​the first pin and the binding area of ​​the second pin are taken as the total binding area, and the binding area of ​​the first pin accounts for 65-75% of the total binding area.

3. The power single tube according to claim 1, wherein: The binding area of ​​the first pin is provided with a plurality of first connection points, and the chip component is connected to the plurality of first connection points in a one-to-one correspondence through a plurality of the first binding lines.

4. The power single tube according to claim 1, wherein: When the first pin is used as the first electrode and the second pin has at least one pin as the second electrode, the portion of one of the first pin and the second pin extending out of the package is bent toward a side surface of the metal bottom plate and is arranged flush with the third electrode; the portion of the other pin extending out of the package is extended in a direction away from the metal bottom plate; When the first pin and the second pin serve as the same electrode, portions of the first pin and the second pin extending out of the package body are bent toward a side surface of the metal base plate and are arranged flush with the third electrode.

5. The power single tube according to any one of claims 1 to 4, wherein: There are a plurality of the second pins, and at least one of the plurality of the second pins serves as a fourth electrode.

6. The power single tube according to claim 5, wherein: The chip assembly includes an IGBT chip and an FRD chip connected to each other, the first pin and the second pin are electrically connected to the IGBT chip respectively, the first electrode is a power emitter, the second electrode is a gate, the third electrode is a collector, and the fourth electrode is a Kelvin emitter.

7. The power single tube according to any one of claims 1 to 4, wherein: The chip assembly includes a diode chip, the first pin and the second pin are respectively connected to the diode chip and used as an anode, and the third electrode is a cathode.

8. A power module, wherein: It comprises a circuit board assembly and at least one power single tube as described in any one of claims 1 to 7, at least one of the power single tubes is arranged on the circuit board assembly and forms a preset circuit topology through electrical connection.

9. The power module according to claim 8, wherein: The circuit board assembly includes an insulating metal plate, which includes a heat dissipation base plate, an insulating layer and a circuit layer. The insulating layer is arranged on the heat dissipation base plate, and the circuit layer is arranged on the insulating layer. There are multiple power tubes, and the multiple power tubes are arranged on the insulating metal plate and are electrically connected through the circuit layer to form a preset circuit topology.

10. The power module according to claim 9, wherein: The preset circuit topology includes at least one of a rectifier topology and an inverter topology; wherein the inverter topology includes a half-bridge inverter topology and a full-bridge inverter topology.

11. The power module according to claim 10, wherein: When multiple power tubes are electrically connected to form a preset half-bridge inverter topology, the multiple power tubes include a first IGBT power tube and a second IGBT power tube that are separately arranged, and the collector of the first IGBT power tube is electrically connected to the power emitter of the second IGBT power tube through the circuit layer.

12. The power module according to claim 10, wherein: When multiple power tubes are electrically connected to form a preset full-bridge inverter topology, the multiple power tubes include multiple IGBT power tubes connected in a matrix shape, some of the collectors of the multiple IGBT power tubes are connected to each other in the first row through the circuit layer, and other parts of the multiple IGBT power tubes are connected in the second row, and the power emitters of the multiple IGBT power tubes in the first row are connected one-to-one with the collectors of the multiple IGBT power tubes in the second row through the circuit layer.

13. The power module according to claim 10, wherein: When multiple power tubes are electrically connected to form a preset rectifier bridge topology, the multiple power tubes include multiple first diode tubes connected in a matrix shape, anodes of some of the multiple first diode tubes are connected to each other in a first row through the circuit layer, other parts of the multiple first diode tubes are connected in a second row, and cathodes of the multiple first diode tubes in the first row are connected one-to-one with anodes of the multiple first diode tubes in the second row through the circuit layer.

14. The power module according to claim 13, wherein: The multiple power tubes also include an IGBT power tube and a second diode tube, the anode of the second diode tube is connected to the collector of the IGBT power tube through the circuit layer, and the power emitter of the IGBT power tube is connected to the anodes of the multiple first diode tubes arranged in the first row through the circuit layer.

15. An electronic device, wherein: Comprising a power module as described in any one of claims 8-14.

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