Radio frequency front-end module and communication device

Abstract

The present application discloses a radio frequency front-end module and a communication device. The radio frequency front-end module comprises a switch chip, a first tuning module and a second tuning module; the first tuning module comprises a first inductor and a first resonant unit, the first inductor is connected in series between the switch chip and a first signal output end, and the first resonant unit has one end connected to a common end between the first inductor and the first signal output end, and the other end grounded; the second tuning module comprises a second inductor and a second resonant unit, and the second inductor is connected in series between the switch chip and a second signal output end; the first inductor is arranged by means of winding, the second inductor is arranged by means of winding, and the first resonant unit and / or the second resonant unit are arranged between the first inductor and the second inductor. According to the radio frequency front-end module, the first inductor and the second inductor can be isolated, avoiding mutual crosstalk between a radio frequency signal passing through the first inductor and a radio frequency signal passing through the second inductor, improving the isolation degree of the radio frequency front-end module.

Description

RF front-end modules and communication equipment

[0001] This application is based on the Chinese application No. 202311691069.9 filed on December 8, 2023, entitled “RF front-end module and communication equipment”, and claims priority. Technical Field

[0002] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and communication equipment. Background Art

[0003] With the continuous development of radio frequency technology, the frequency bands used in radio frequency front-end modules are increasing. For radio frequency front-end modules used to amplify radio frequency signals in different frequency bands, multiple power amplifiers are typically used to amplify multiple different radio frequency signals. Then, an antenna switch module (ASM) selects one of the multiple radio frequency signals and outputs it to the antenna.

[0004] For multi-antenna scenarios (such as dual antennas), the antenna switch module can output RF signals of different frequency bands to multiple antennas. Signal crosstalk will occur between RF signals of different frequency bands, thereby affecting the isolation between antennas. Summary of the Invention

[0005] The present application provides a radio frequency front-end module and a communication device, which solves the problem of signal crosstalk caused when radio frequency signals of different frequency bands are transmitted on different paths in the related art.

[0006] In the first aspect, the present application provides a radio frequency front-end module having a first signal output terminal and a second signal output terminal, the first signal output terminal being used to connect to a first antenna, and the second signal output terminal being used to connect to a second antenna; the radio frequency front-end module includes: a switch chip; a first tuning module, the first tuning module including a first inductor and a first resonance unit, the first inductor being connected in series between the first output terminal and the first signal output terminal of the switch chip, one end of the first resonance unit being connected to a common end between the first inductor and the first signal output terminal, and the other end being grounded; a second tuning module, the second tuning module including a second inductor and a second resonance unit, the second inductor being connected in series between the second output terminal and the second signal output terminal of the switch chip, one end of the second resonance unit being connected to a common end between the second inductor and the second signal output terminal, and the other end being grounded; wherein, the first inductor is arranged in a winding manner, the second inductor is arranged in a winding manner, and the first resonance unit and / or the second resonance unit are arranged between the first inductor and the second inductor.

[0007] In the above-mentioned RF front-end module, since the first inductor and the second inductor are both arranged in a winding manner, the first inductor and the second inductor will generate strong electromagnetic waves. Therefore, the first resonant unit is arranged between the first inductor and the second inductor, or the second resonant unit is arranged between the first inductor and the second inductor. This can achieve isolation between the first inductor and the second inductor, avoid crosstalk between the RF signal passing through the first inductor and the RF signal passing through the second inductor, and thus ensure the isolation requirements between the antennas.

[0008] In the second aspect, the present application also provides a radio frequency front-end module having a first signal output terminal and a second signal output terminal, the first signal output terminal being used to connect to a first antenna, and the second signal output terminal being used to connect to a second antenna; the radio frequency front-end module includes: a switch chip; a first inductor, the first inductor being connected in series between the first output terminal and the first signal output terminal of the switch chip; a second inductor, the second inductor being connected in series between the second output terminal and the second signal output terminal of the switch chip; wherein, the first inductor is arranged in a winding manner, the second inductor is arranged in a winding manner, and a surface mount device is arranged between the first inductor and the second inductor.

[0009] In the above-mentioned RF front-end module, since the first inductor and the second inductor are both arranged in a winding manner, the first inductor and the second inductor will generate strong electromagnetic waves. Therefore, the first resonant unit is arranged between the first inductor and the second inductor, or the second resonant unit is arranged between the first inductor and the second inductor, so that the first inductor and the second inductor can be isolated, thereby avoiding crosstalk between the RF signal passing through the first inductor and the RF signal passing through the second inductor, thereby ensuring the isolation requirements between the antennas.

[0010] In a third aspect, the present application also provides a communication device, which includes the above-mentioned radio frequency front-end module. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0012] FIG1 is a schematic structural diagram of a communication device provided in an embodiment of the present application;

[0013] FIG2 is a schematic diagram of a circuit structure of a radio frequency front-end module provided in an embodiment of the present application;

[0014] FIG3 is a schematic diagram of a circuit layout of a radio frequency front-end module provided in an embodiment of the present application;

[0015] FIG4 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0016] FIG5 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0017] FIG6 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0018] FIG7 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0019] FIG8 is a schematic diagram of a circuit layout of another RF front-end module provided in an embodiment of the present application;

[0020] FIG9 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0021] FIG10 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0022] FIG11 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0023] FIG12 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application;

[0024] FIG13 is a schematic diagram of a circuit layout of another RF front-end module provided in an embodiment of the present application;

[0025] FIG14 is a schematic diagram of the circuit structure of another RF front-end module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0027] The flowcharts shown in the accompanying drawings are for illustrative purposes only and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may be decomposed, combined, or partially merged, so the actual execution order may vary depending on the actual situation.

[0028] It should be understood that the terms used in this specification are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0029] It will also be understood that the term "and / or" used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0030] The following describes some embodiments of the present application in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features therein may be combined with each other.

[0031] Please refer to Figure 1, which is a schematic diagram of the structure of a communication device 1000 provided in an embodiment of the present application. The communication device 1000 may include a radio frequency front-end module 100, a first antenna 200, and a second antenna 201. The radio frequency front-end module 100 has a first signal output terminal 10 and a second signal output terminal 11. The first signal output terminal 10 is used to connect to the first antenna 200, and the second signal output terminal 11 is used to connect to the second antenna 201.

[0032] Exemplarily, the communication device 1000 may include electronic devices such as smart phones, tablet computers, and smart watches, and may also include communication devices such as base stations and NFC (Near Field Communication) devices.

[0033] Please refer to Figure 2, which is a schematic diagram of the circuit structure of a radio frequency front-end module 100 provided in an embodiment of the present application. The radio frequency front-end module 100 is a component that integrates two or more discrete devices such as a radio frequency switch, a low-noise amplifier, a filter, a duplexer, and a power amplifier into an independent module, thereby improving the integration and hardware performance and miniaturizing the volume. Specifically, the radio frequency front-end module 100 can be applied to communication devices such as smartphones, tablets, smart watches, and routers. The radio frequency front-end module 100 in this embodiment can support carrier aggregation and dual connectivity.

[0034] As shown in FIG2 , the RF front-end module 100 may include a switch chip 12, a first tuning module 13, and a second tuning module 14. The first tuning module 13 may include a first inductor L1 and a first resonant unit 130. The first inductor L1 is connected in series between the first output terminal 120 and the first signal output terminal 10 of the switch chip 12. One end of the first resonant unit 130 is connected to the common terminal between the first inductor L1 and the first signal output terminal 10, and the other end is grounded. The second tuning module may include a second inductor L2 and a second resonant unit 140. The second inductor L2 is connected in series between the second output terminal 121 and the second signal output terminal 11 of the switch chip 12. One end of the second resonant unit 140 is connected to the common terminal between the second inductor L2 and the second signal output terminal 11, and the other end is grounded. The first inductor L1 and the second inductor L2 are arranged in a winding manner. The first resonant unit 130 and / or the second resonant unit 140 are arranged between the first inductor L1 and the second inductor L2.

[0035] Exemplarily, as shown in FIG2 , the first resonance unit 130 and the second resonance unit 140 are both disposed between the first inductor L1 and the second inductor L2 .

[0036] It should be noted that by setting the first inductor L1 in a winding manner on the series branch between the first output terminal 120 of the switch chip 12 and the first signal output terminal 10, and setting the second inductor L2 in a winding manner on the series branch between the second output terminal 121 of the switch chip 12 and the second signal output terminal 11, compared with the surface mount devices (SMD) method, setting the first inductor L1 and the second inductor L2 in a winding manner can achieve a higher Q value, thereby achieving smaller insertion loss of the RF front-end module 100 and avoiding signal crosstalk.

[0037] In an RF front-end module 100 provided in an embodiment of the present application, since the first inductor L1 and the second inductor L2 are both arranged in a winding manner, the first inductor L1 and the second inductor L2 will generate strong electromagnetic waves. Therefore, the first resonant unit 130 is arranged between the first inductor L1 and the second inductor L2, or the second resonant unit 140 is arranged between the first inductor L1 and the second inductor L2. This can achieve isolation of the first inductor L1 and the second inductor L2, thereby avoiding mutual inductance between the first inductor L1 and the second inductor L2 due to being too close, thereby avoiding crosstalk between the RF signal passing through the first inductor L1 and the RF signal passing through the second inductor L2, and thus ensuring the isolation requirements between the antennas.

[0038] The following is an introduction to each module in the RF front-end module 100.

[0039] In an embodiment of the present application, the first tuning module 13 and the second tuning module 14 both have the function of suppressing harmonics in the RF signal, and are also configured to participate in the fundamental wave output impedance matching of the RF signal in the RF front-end module 100, thereby improving the isolation when the RF front-end module 100 outputs the RF signal to the first antenna 200 and the second antenna 201.

[0040] Please refer to Figure 3, which is a circuit layout diagram of a RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 3, on the substrate, relative to the first inductor L1, the first resonant unit 130 is arranged close to the first signal output terminal 10; relative to the second inductor L2, the second resonant unit 140 is arranged close to the second signal output terminal 11.

[0041] Illustratively, on the substrate where the RF front-end module 100 is located, the first resonance unit 130 is closer to the first signal output terminal 10 than the first inductor L1 , and the second resonance unit 140 is closer to the second signal output terminal 11 than the second inductor L2 .

[0042] It should be noted that by arranging the first resonant unit 130 close to the first signal output terminal 10, the layout of the RF front-end module 100 is made more compact, the area utilization of the RF front-end module 100 is improved, and the wiring between the first resonant unit 130 and the first signal output terminal 10 is shortened, thereby avoiding signal loss caused by excessively long wiring. Similarly, by arranging the second resonant unit 140 close to the second signal output terminal 11, the layout of the RF front-end module 100 is made more compact, the area utilization of the RF front-end module 100 is improved, and the wiring between the second resonant unit 140 and the second signal output terminal 11 is shortened, thereby avoiding signal loss caused by excessively long wiring.

[0043] Please refer to Figure 4, which is a schematic diagram of the circuit structure of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 4, the first resonant unit 130 may include a first capacitor C1 and a third inductor L3. One end of the first capacitor C1 and the third inductor L3 connected in series is connected to the common terminal between the first inductor L1 and the first signal output terminal 10, and the other end is grounded. The first capacitor C1 is a chip capacitor, and the third inductor L3 is a chip inductor or a winding inductor.

[0044] It should be noted that the first capacitor C1 and the third inductor L3 form a series resonance, and specific parameters of the first capacitor C1 and the third inductor L3 can be determined according to the frequency of the harmonics in the radio frequency signal that the first resonant unit 130 needs to suppress.

[0045] As shown in FIG4 , the second resonant unit 140 may include a second capacitor C2 and a fourth inductor L4. One end of the second capacitor C2 and the fourth inductor L4 connected in series is connected to a common terminal between the second inductor L2 and the second signal output terminal 11, and the other end is grounded. The second capacitor C2 is a chip capacitor, and the fourth inductor L4 is a chip inductor or a wire-wound inductor.

[0046] In the embodiment of the present application, the second capacitor C2 and the fourth inductor L4 form a series resonance. The specific parameters of the second capacitor C2 and the fourth inductor L4 can be determined according to the frequency of the harmonics in the radio frequency signal that the second resonant unit 140 needs to suppress.

[0047] In some embodiments, referring to FIG. 2 to FIG. 4 , the switch chip 12 may be disposed on a substrate, the first inductor L1 and the second inductor L2 may be disposed on the substrate in a winding manner, and the first resonant unit 130 and the second resonant unit 140 may be disposed on the substrate.

[0048] It should be noted that in the embodiment of the present application, since there is ample space on the substrate, the first inductor L1, the second inductor L2, the first resonant unit 130 and the second resonant unit 140 can be directly set on the substrate, and the components can be easily detected and replaced.

[0049] Please refer to Figure 5, which is a circuit structure diagram of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 5, the RF front-end module 100 may further include a tuning chip 15, the tuning chip 15 is arranged on the substrate, the first inductor L1 and the second inductor L2 are arranged on the tuning chip 15 in a winding manner, and the first resonant unit 130 and the second resonant unit 140 are arranged on the tuning chip 15.

[0050] It should be noted that by arranging the first inductor L1 and the second inductor L2 on the tuning chip 15 in a winding manner, and arranging the first resonant unit 130 and the second resonant unit 140 on the tuning chip 15, the first inductor L1, the second inductor L2, the first resonant unit 130 and the second resonant unit 140 can be integrated on the tuning chip 15, which not only can achieve smaller insertion loss of the RF front-end module 100 and avoid signal crosstalk, but also can reduce the layout space occupied by the RF front-end module 100, making the overall structure of the RF front-end module 100 more compact and miniaturized.

[0051] Please refer to Figure 6, which is a circuit structure diagram of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 6, the RF front-end module 100 may further include a first tuning chip 150 and a second tuning chip 151. The first tuning chip 150 and the second tuning chip 151 are arranged on a substrate, the first inductor L1 is arranged on the first tuning chip 150 in a winding manner, and the first resonant unit 130 is arranged on the first tuning chip 150; the second inductor L2 is arranged on the second tuning chip 151 in a winding manner, and the second resonant unit 140 is arranged on the second tuning chip 151.

[0052] It should be noted that by arranging the first inductor L1 and the first resonant unit 130 on the first tuning chip 150, and arranging the second inductor L2 and the second resonant unit 140 on the second tuning chip 151, signal isolation can be achieved through different tuning chips, thereby avoiding the mutual inductance of the first inductor L1 and the second inductor L2 due to being too close, and thus avoiding crosstalk between the RF signal passing through the first inductor L1 and the RF signal passing through the second inductor L2, thereby ensuring the isolation requirements between the antennas, and also reducing the layout space occupied by the RF front-end module 100, making the overall structure of the RF front-end module 100 more compact and miniaturized.

[0053] Please refer to FIG7 , which is a schematic diagram of the circuit structure of another RF front-end module 100 provided in an embodiment of the present application. As shown in FIG7 , the first tuning module 13 may further include a first electrostatic discharge protection unit 131, one end of which is connected to the common terminal between the first resonant unit 130 and the first signal output terminal 10, and the other end is grounded. The second tuning module 14 may further include a second electrostatic discharge protection unit 141, one end of which is connected to the common terminal between the second resonant unit 140 and the second signal output terminal 11, and the other end is grounded.

[0054] It should be noted that the first electrostatic discharge protection unit 131 and the second electrostatic discharge protection unit 141 can be used to transfer electrostatic charges in the RF front-end module 100 , thereby ensuring the safe use of the RF front-end module 100 .

[0055] In some embodiments, as shown in FIG7 , the first ESD protection unit 131 may include a fifth inductor L5, and the second ESD protection unit 141 may include a sixth inductor L6. The fifth inductor L5 is provided in a patch or wire-wound manner, and the sixth inductor L6 is provided in a patch or wire-wound manner.

[0056] For example, the fifth inductor L5 can be a chip inductor or a wire-wound inductor. The sixth inductor L6 can be a chip inductor or a wire-wound inductor, which is not specifically limited in this embodiment.

[0057] In some embodiments, relative to the first resonance unit 130 , the fifth inductor L5 is disposed close to the first signal output terminal 10 , and relative to the second resonance unit 140 , the sixth inductor L6 is disposed close to the second signal output terminal 11 .

[0058] Please refer to Figure 8, which is a schematic diagram of the circuit layout of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 8, on the substrate, relative to the first resonant unit 130, the position of the fifth inductor L5 is close to the first signal output terminal 10, and relative to the second resonant unit 140, the position of the sixth inductor L6 is close to the second signal output terminal 11.

[0059] In the above embodiment, relative to the first resonant unit 130, by arranging the fifth inductor L5 close to the first signal output terminal 10, the layout space occupied by the RF front-end module 100 can be reduced and the wiring between the fifth inductor L5 and the first signal output terminal 10 can be shortened, thereby making the overall structure of the RF front-end module 100 more compact and miniaturized, and avoiding signal loss caused by excessively long wiring. Similarly, relative to the second resonant unit 140, by arranging the sixth inductor L6 close to the second signal output terminal 11, the layout space occupied by the RF front-end module 100 can be reduced and the wiring between the sixth inductor L6 and the second signal output terminal 11 can be shortened, thereby making the overall structure of the RF front-end module 100 more compact and miniaturized, and avoiding signal loss caused by excessively long wiring.

[0060] Please refer to Figure 9, which is a circuit structure diagram of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 9, the RF front-end module 100 has a first signal input terminal 16 and a second signal input terminal 17. The first signal input terminal 16 is configured to input a first RF signal, and the second signal input terminal 17 is configured to input a second RF signal.

[0061] As shown in Figure 9, the RF front-end module 100 may further include a first filtering module 18, a second filtering module 19, a first power amplification module 20, a second power amplification module 21, a first frequency band selection module 22, and a second frequency band selection module 23. The first filtering module 18 is connected between the first signal input terminal 16 and the input terminal of the switch chip 12, and the second filtering module 19 is connected between the second signal input terminal 17 and the input terminal of the switch chip 12. The first power amplification module 20 and the first frequency band selection module 22 are sequentially arranged between the first signal input terminal 16 and the first filtering module 18, and the second power amplification module 21 and the second frequency band selection module 23 are sequentially arranged between the second signal input terminal 17 and the second filtering module 19.

[0062] Exemplarily, a first end of the first power amplification module 20 is connected to the first signal input terminal 16, a second end of the first power amplification module 20 is connected to the first end of the first frequency band selection module 22, and a second end of the first frequency band selection module 22 is connected to the first filtering module 18. A first end of the second power amplification module 21 is connected to the second signal input terminal 17, a second end of the second power amplification module 21 is connected to the first end of the second frequency band selection module 23, and a second end of the second frequency band selection module 23 is connected to the second filtering module 19.

[0063] It should be noted that the first power amplifier module 20 is used to power amplify the input first RF signal, and the second power amplifier module 21 is used to power amplify the input second RF signal. Specifically, the first power amplifier module 20 and the second power amplifier module 21 can be power amplifier circuits composed of power amplifier tubes (for example, bipolar junction transistors, metal-oxide semiconductor field-effect transistors, etc.). This embodiment does not specifically limit the specific implementation of the first power amplifier module 20 and the second power amplifier module 21.

[0064] The first frequency band selection module 22 is configured to select a frequency band for the power-amplified first RF signal output by the first power amplifier module 20, outputting the first RF signal in the first frequency band or the second frequency band. The second frequency band selection module 23 is configured to select a frequency band for the power-amplified second RF signal output by the second power amplifier module 21, outputting the second RF signal in the third frequency band or the fourth frequency band. The first frequency band, the second frequency band, the third frequency band, and the fourth frequency band can be set based on actual conditions, and the specific values ​​are not limited herein.

[0065] It is understood that the first frequency band selection module 22 and the second frequency band selection module 23 can be used to selectively output RF signals of different frequency bands. For example, when the first frequency band selection module 22 is configured to output a first RF signal of the first frequency band, if the frequency band of the first RF signal output by the first power amplification module 20 to the first frequency band selection module 22 is the second frequency band or another frequency band, the first frequency band selection module 22 does not output the first RF signal; if the frequency band of the first RF signal output by the first power amplification module 20 to the first frequency band selection module 22 is the first frequency band, the first frequency band selection module 22 outputs the first RF signal. For another example, when the first frequency band selection module 22 is configured to output a first RF signal of the second frequency band, if the frequency band of the first RF signal output by the first power amplification module 20 to the first frequency band selection module 22 is the first frequency band or another frequency band, the first frequency band selection module 22 does not output the first RF signal; if the frequency band of the first RF signal output by the first power amplification module 20 to the first frequency band selection module 22 is the second frequency band, the first frequency band selection module 22 outputs the first RF signal.

[0066] It should be noted that in the embodiment of the present application, by providing a first frequency band selection module 22 between the first power amplification module 20 and the first filtering module 18, the first frequency band selection module 22 can selectively output RF signals of different frequency bands, thereby improving the diversity of the frequency bands of the RF signals output by the RF front-end module 100. By providing a second frequency band selection module 23 between the second power amplification module 21 and the second filtering module 19, the second frequency band selection module 23 can selectively output RF signals of different frequency bands, thereby improving the diversity of the frequency bands of the RF signals output by the RF front-end module 100.

[0067] In some embodiments, the first power amplifier module 20 and the second power amplifier module 21 are configured to support the transmission of dual-connection radio frequency signals. In particular, the first power amplifier module 20 and the second power amplifier module 21 are configured to operate in ENDC (eNB NR Dual Connection, dual connection of 4G radio access network and 5G NR) mode to support the transmission of dual-connection radio frequency signals.

[0068] It should be noted that when the first power amplifier module 20 and the second power amplifier module 21 are configured to operate in ENDC mode, signal crosstalk is more obvious. In the embodiment of the present application, when the first power amplifier module 20 and the second power amplifier module 21 operate in the ENDC mode application scenario, by isolating the first inductor L1 from the second inductor L2, the signal crosstalk problem can be specifically solved, thereby improving the isolation requirement between the antennas.

[0069] Please refer to Figure 10, which is a schematic diagram of the circuit structure of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 10, the first filtering module 18 may include a first filter 180 and a second filter 181. One end of the first filter 180 is connected to the first output end 220 of the first frequency band selection module 22, and the other end of the first filter 180 is connected to the switch chip 12. The first filter 180 is used to filter out the harmonic signals in the first RF signal of the first frequency band output by the first frequency band selection module 22. One end of the second filter 181 is connected to the second output end 221 of the first frequency band selection module 22, and the other end of the second filter 181 is connected to the switch chip 12. The second filter 181 is used to filter out the harmonic signals in the first RF signal of the second frequency band output by the first frequency band selection module 22.

[0070] It should be noted that by setting the first filter 180 and the second filter 181 in the first filtering module 18, the first filter 180 and the second filter 181 can respectively filter out the harmonic signals in the first RF signals of different frequency bands output by the first frequency band selection module 22.

[0071] The second filtering module 19 may include a third filter 190 and a fourth filter 191. One end of the third filter 190 is connected to the first output end 230 of the second frequency band selection module 23, and the other end of the third filter 190 is connected to the switch chip 12. The third filter 190 is configured to filter out harmonic signals in the second RF signal in the third frequency band output by the second frequency band selection module 23. One end of the fourth filter 191 is connected to the second output end 231 of the second frequency band selection module 23, and the other end of the fourth filter 191 is connected to the switch chip 12. The fourth filter 191 is configured to filter out harmonic signals in the second RF signal in the fourth frequency band output by the second frequency band selection module 23.

[0072] It should be noted that by setting the third filter 190 and the fourth filter 191 in the second filtering module 19, the third filter 190 and the fourth filter 191 can respectively filter out the harmonic signals in the second RF signals of different frequency bands output by the second frequency band selection module 23.

[0073] Please refer to Figure 11, which is a schematic diagram of the circuit structure of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 11, the RF front-end module 100 has a first signal output terminal 10 and a second signal output terminal 11. The first signal output terminal 10 is used to connect to the first antenna 200, and the second signal output terminal 11 is used to connect to the second antenna 201. The RF front-end module 100 may include a switch chip 12, a first inductor L1, and a second inductor L2. The first inductor L1 is connected in series between the first output terminal 120 of the switch chip 12 and the first signal output terminal 10, and the second inductor L2 is connected in series between the second output terminal 121 of the switch chip 12 and the second signal output terminal 11. The first inductor L1 is provided in a winding manner, and the second inductor L2 is provided in a winding manner. A surface mount device 30 is provided between the first inductor L1 and the second inductor L2.

[0074] It should be noted that by configuring both the first inductor L1 and the second inductor L2 as wire wound devices, a higher Q value and lower insertion loss of the RF signal can be achieved compared to using surface mount devices. By providing a surface mount device 30 between the first inductor L1 and the second inductor L2, the first inductor L1 and the second inductor L2 can be isolated, preventing mutual inductance between the first inductor L1 and the second inductor L2 due to their proximity. This, in turn, prevents crosstalk between the RF signal passing through the first inductor L1 and the RF signal passing through the second inductor L2, thereby ensuring the required isolation between the antennas.

[0075] Please refer to Figure 12, which is a schematic diagram of the circuit structure of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 12, the surface mount device 30 may include a first capacitor C1 and a third inductor L3, and / or the surface mount device 30 may include a second capacitor C2 and a fourth inductor L4. One end of the first capacitor C1 and the third inductor L3 connected in series is connected to the common end between the first inductor L1 and the first signal output terminal 10, and the other end is grounded. One end of the second capacitor C2 and the fourth inductor L4 connected in series is connected to the common end between the second inductor L2 and the second signal output terminal 11, and the other end is grounded.

[0076] It is understood that the surface mount device 30 may include the first capacitor C1, the third inductor L3, the second capacitor C2, and the fourth inductor L4, or the surface mount device 30 may include the first capacitor C1 and the third inductor L3, or the surface mount device 30 may include the second capacitor C2 and the fourth inductor L4. The first capacitor C1 and the third inductor L3 form a series resonance, and the second capacitor C2 and the fourth inductor L4 form a series resonance.

[0077] Please refer to Figure 13, which is a circuit layout diagram of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 13, relative to the first inductor L1, the first capacitor C1 and the third inductor L3 are arranged close to the first signal output terminal 10; relative to the second inductor L2, the second capacitor C2 and the fourth inductor L4 are arranged close to the second signal output terminal 11.

[0078] Exemplarily, relative to the first inductor L1, the first capacitor C1 and the third inductor L3 are positioned on the substrate closer to the first signal output terminal 10. Relative to the second inductor L2, the second capacitor C2 and the fourth inductor L4 are positioned on the substrate closer to the second signal output terminal 11.

[0079] It should be noted that by arranging the first capacitor C1 and the third inductor L3 on the substrate close to the first signal output terminal 10, the layout space occupied by the RF front-end module 100 can be reduced and the wiring can be shortened, making the overall structure of the RF front-end module 100 more compact and miniaturized, and avoiding signal loss caused by excessively long wiring. By arranging the second capacitor C2 and the fourth inductor L4 on the substrate close to the second signal output terminal 11, the layout space occupied by the RF front-end module 100 can be reduced and the wiring can be shortened, making the overall structure of the RF front-end module 100 more compact and miniaturized, and avoiding signal loss caused by excessively long wiring.

[0080] Please refer to Figure 14, which is a circuit structure diagram of another RF front-end module 100 provided in an embodiment of the present application. As shown in Figure 14, the RF front-end module 100 may also include a first electrostatic discharge protection unit 131 and a second electrostatic discharge protection unit 141. One end of the first electrostatic discharge protection unit 131 is connected to the common end between the first inductor L1 and the first signal output end 10, and the other end is grounded. One end of the second electrostatic discharge protection unit 141 is connected to the common end between the second inductor L2 and the second signal output end 11, and the other end is grounded.

[0081] The surface mount device 30 may include a fifth inductor L5 in the first electrostatic discharge protection unit 131 and a sixth inductor L6 in the second electrostatic discharge protection unit 141. Both the fifth inductor L5 and the sixth inductor L6 are electrostatic inductors and are provided in the form of surface mount devices.

[0082] It should be noted that the first electrostatic discharge protection unit 131 and the second electrostatic discharge protection unit 141 can be used to transfer electrostatic charges in the RF front-end module 100 , thereby ensuring the safe use of the RF front-end module 100 .

[0083] The above are only specific embodiments of the present application, but the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and such modifications or substitutions should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A radio frequency front-end module, wherein: It has a first signal output end and a second signal output end, the first signal output end is used to connect to a first antenna, and the second signal output end is used to connect to a second antenna; The radio frequency front-end module comprises: Switch chip; A first tuning module, the first tuning module comprising a first inductor and a first resonance unit, the first inductor is connected in series between the first output end of the switch chip and the first signal output end, one end of the first resonance unit is connected to a common end between the first inductor and the first signal output end, and the other end is grounded; A second tuning module, the second tuning module comprising a second inductor and a second resonance unit, the second inductor is connected in series between the second output terminal of the switch chip and the second signal output terminal, one end of the second resonance unit is connected to a common terminal between the second inductor and the second signal output terminal, and the other end is grounded; The first inductor is arranged in a winding manner, the second inductor is arranged in a winding manner, and the first resonance unit and / or the second resonance unit are arranged between the first inductor and the second inductor.

2. The RF front-end module according to claim 1, wherein: Relative to the first inductor, the first resonance unit is arranged close to the first signal output end; Relative to the second inductor, the second resonance unit is arranged close to the second signal output end.

3. The RF front-end module according to claim 1, wherein: The first resonant unit includes a first capacitor and a third inductor, one end of the first capacitor and the third inductor connected in series is connected to a common end between the first inductor and the first signal output end, and the other end is grounded; The first capacitor is a chip capacitor, and the third inductor is a chip inductor or a winding inductor.

4. The RF front-end module according to claim 1, wherein: The second resonant unit comprises a second capacitor and a fourth inductor, wherein one end of the second capacitor and the fourth inductor connected in series is connected to a common end between the second inductor and the second signal output end, and the other end is grounded; The second capacitor is a chip capacitor, and the fourth inductor is a chip inductor or a winding inductor.

5. The RF front-end module according to claim 1, wherein: The switch chip is arranged on a substrate, the first inductor and the second inductor are arranged on the substrate in a winding manner, and the first resonance unit and the second resonance unit are arranged on the substrate.

6. The RF front-end module according to claim 1, wherein: The RF front-end module also includes a tuning chip, which is arranged on a substrate, the first inductor and the second inductor are arranged on the tuning chip in a winding manner, and the first resonance unit and the second resonance unit are arranged on the tuning chip.

7. The RF front-end module according to claim 1, wherein: The RF front-end module further includes a first tuning chip and a second tuning chip, wherein the first tuning chip and the second tuning chip are arranged on a substrate, the first inductor is arranged on the first tuning chip in a winding manner, and the first resonance unit is arranged on the first tuning chip; The second inductor is arranged on the second tuning chip in a winding manner, and the second resonance unit is arranged on the second tuning chip.

8. The RF front-end module according to any one of claims 1 to 7, wherein: The first tuning module further includes a first electrostatic discharge protection unit, one end of the first electrostatic discharge protection unit is connected to a common end between the first resonance unit and the first signal output end, and the other end is grounded; The second tuning module further includes a second electrostatic discharge protection unit, one end of the second electrostatic discharge protection unit is connected to the common end between the second resonance unit and the second signal output end, and the other end is grounded.

9. The RF front-end module according to claim 8, wherein: The first electrostatic discharge protection unit includes a fifth inductor, and the second electrostatic discharge protection unit includes a sixth inductor; wherein, The fifth inductor is arranged in a patch type or a winding type, and the sixth inductor is arranged in a patch type or a winding type.

10. The RF front-end module according to claim 9, wherein: With respect to the first resonance unit, the fifth inductor is disposed close to the first signal output end, and with respect to the second resonance unit, the sixth inductor is disposed close to the second signal output end.

11. The RF front-end module according to any one of claims 1 to 7, wherein: in, The RF front-end module has a first signal input terminal and a second signal input terminal, the first signal input terminal is configured to input a first RF signal, and the second signal input terminal is configured to input a second RF signal; The RF front-end module also includes a first filtering module, a second filtering module, a first power amplification module, a second power amplification module, a first frequency band selection module and a second frequency band selection module; wherein, The first filter module is connected between the first signal input terminal and the input terminal of the switch chip, and the second filter module is connected between the second signal input terminal and the input terminal of the switch chip; The first power amplification module and the first frequency band selection module are sequentially arranged between the first signal input end and the first filtering module, and the second power amplification module and the second frequency band selection module are sequentially arranged between the second signal input end and the second filtering module.

12. The RF front-end module according to claim 11, wherein: The first power amplification module and the second power amplification module are configured to support transmission of dual-connection radio frequency signals.

13. The RF front-end module according to claim 11, wherein: The first filtering module includes a first filter and a second filter, one end of the first filter is connected to the first output end of the first frequency band selection module, the other end of the first filter is connected to the switch chip, and the first filter is used to filter out the harmonic signal in the first RF signal of the first frequency band output by the first frequency band selection module; one end of the second filter is connected to the second output end of the first frequency band selection module, the other end of the second filter is connected to the switch chip, and the second filter is used to filter out the harmonic signal in the first RF signal of the second frequency band output by the first frequency band selection module; The second filtering module includes a third filter and a fourth filter, one end of the third filter is connected to the first output end of the second frequency band selection module, and the other end of the third filter is connected to the switch chip, and the third filter is used to filter out the harmonic signal in the second RF signal of the third frequency band output by the second frequency band selection module; one end of the fourth filter is connected to the second output end of the second frequency band selection module, and the other end of the fourth filter is connected to the switch chip, and the fourth filter is used to filter out the harmonic signal in the second RF signal of the fourth frequency band output by the second frequency band selection module.

14. A radio frequency front-end module, wherein: It has a first signal output end and a second signal output end, the first signal output end is used to connect to a first antenna, and the second signal output end is used to connect to a second antenna; The radio frequency front-end module comprises: Switch chip; A first inductor, wherein the first inductor is connected in series between the first output terminal of the switch chip and the first signal output terminal; a second inductor, wherein the second inductor is connected in series between the second output terminal of the switch chip and the second signal output terminal; The first inductor is arranged in a winding manner, the second inductor is arranged in a winding manner, and a surface mount device is arranged between the first inductor and the second inductor.

15. The RF front-end module according to claim 14, wherein: The surface mount device includes a first capacitor and a third inductor, one end of the first capacitor and the third inductor connected in series is connected to the common end between the first inductor and the first signal output end, and the other end is grounded; and / or the surface mount device includes a second capacitor and a fourth inductor, one end of the second capacitor and the fourth inductor connected in series is connected to the common end between the second inductor and the second signal output end, and the other end is grounded.

16. The RF front-end module according to claim 15, wherein: Relative to the first inductor, the first capacitor and the third inductor are arranged close to the first signal output terminal; Relative to the second inductor, the second capacitor and the fourth inductor are arranged close to the second signal output terminal.

17. The RF front-end module according to claim 14, wherein: The RF front-end module further includes a first electrostatic discharge protection unit and a second electrostatic discharge protection unit, one end of the first electrostatic discharge protection unit is connected to a common end between the first inductor and the first signal output end, and the other end is grounded, and one end of the second electrostatic discharge protection unit is connected to a common end between the second inductor and the second signal output end, and the other end is grounded; Wherein, the surface mount device includes a fifth inductor in the first electrostatic discharge protection unit and a sixth inductor in the second electrostatic discharge protection unit.

18. A communication device, wherein: The communication device comprises the radio frequency front-end module as described in any one of claims 1 to 13, or the radio frequency front-end module as described in any one of claims 14 to 17.

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