Film forming apparatus

Abstract

Disclosed is a film forming apparatus which includes a process chamber, a stage, a heat shielding member, a gas supply unit, a first heater, and a second heater. The stage is provided inside the process chamber, and a substrate is placed on the stage. The heat shielding member has a plurality of through holes and is arranged over the stage so as to cover the substrate placed on the stage. The gas supply unit supplies a gas of a first monomer and a gas of a second monomer into the process chamber, and forms an organic film of a polymer on the substrate by means of a polymerization reaction of the first monomer and the second monomer. The first heater heats the side wall of the process chamber to a first temperature. The second heater heats the stage to a second temperature that is lower than the first temperature. At the time when the organic film of the polymer is formed on the substrate, the heat shielding member comes into contact with the stage but does not come into contact with the process chamber.

Description

Film forming equipment

[0001] Various aspects and embodiments of the present disclosure relate to a film deposition apparatus.

[0002] For example, Patent Document 1 listed below discloses: "A film formation apparatus for forming a polymer film on a substrate to be processed by vapor deposition polymerization, comprising a stage, a stage heater, a top plate heater, and a control device. The stage is provided in a processing vessel that accommodates the substrate to be processed, and the substrate to be processed is placed on the stage. The stage heater is provided in the stage and heats the substrate to be processed placed on the stage. The top plate heater is provided on a top plate of the processing vessel that faces the stage. The control device controls the temperatures of the stage heater and the top plate heater. The control device also controls the temperature of the stage heater in a first temperature unit, thereby controlling the temperature of the substrate to be processed in the first temperature unit. The control device also controls the temperature of the top plate heater in a second temperature unit, thereby controlling the temperature of the substrate to be processed in a temperature unit finer than the first temperature unit by radiant heat radiated through the top plate."

[0003] Japanese Patent Application Laid-Open No. 2018-181955

[0004] The present disclosure provides a film forming apparatus capable of improving the uniformity of the thickness of an organic film formed on a substrate.

[0005] One aspect of the present disclosure is a film formation apparatus including a processing vessel, a stage, a heat shield, a gas supply unit, a first heater, and a second heater. The stage is housed within the processing vessel, and a substrate is placed on the stage. The heat shield has a plurality of through holes and is disposed on the stage so as to cover the substrate placed on the stage. The gas supply unit supplies a first monomer gas and a second monomer gas into the processing vessel, and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer. The first heater heats a sidewall of the processing vessel to a first temperature. The second heater heats the stage to a second temperature lower than the first temperature. The heat shield contacts the stage but does not contact the processing vessel when the polymer organic film is formed on the substrate.

[0006] According to various aspects and embodiments of the present disclosure, it is possible to improve the uniformity of the thickness of an organic film formed on a substrate.

[0007] FIG. 1 is a schematic cross-sectional view showing an example of a film forming apparatus according to an embodiment of the present disclosure. FIG. 2 is a view showing an example of a surface of a top plate facing the processing space. FIG. 3 is a cross-sectional view showing an example of a structure of a heat shield. FIG. 4 is a plan view showing an example of a structure of a heat shield. FIG. 5 is a view showing an example of a stage position during substrate transport. FIG. 6 is a view showing an example of a stage position during cleaning. FIG. 7 is a cross-sectional view showing another example of a structure of a heat shield. FIG. 8 is a cross-sectional view showing another example of a structure of a heat shield. FIG. 9 is a side view showing another example of a structure of a heat shield. FIG. 10 is a cross-sectional view showing another example of a structure of a heat shield. FIG. 11 is a plan view showing another example of a structure of a heat shield.

[0008] Hereinafter, embodiments of the disclosed film forming apparatus will be described in detail with reference to the drawings. However, the disclosed film forming apparatus is not limited to the following embodiments.

[0009] In vapor deposition polymerization, the deposition rate varies greatly depending on the substrate temperature. Therefore, to achieve a uniform polymer film thickness, it is necessary to make the temperature distribution of the substrate more uniform.

[0010] Therefore, the present disclosure provides a technique that can improve the uniformity of the thickness of an organic film formed on a substrate.

[0011] 1 is a schematic cross-sectional view showing an example of a film formation apparatus 1 according to an embodiment of the present disclosure. The film formation apparatus 1 according to this embodiment forms a polymer organic film on a substrate W by vapor deposition polymerization using a plurality of types of monomers. The film formation apparatus 1 includes an apparatus main body 10 and a control device 100 that controls the apparatus main body 10. The apparatus main body 10 includes a processing chamber 11 that accommodates the substrate W.

[0012] The processing vessel 11 has a lower vessel 12 made of a metal such as aluminum and an exhaust duct 13. The lower vessel 12 constitutes the lower part of the processing vessel 11. The lower vessel 12 is grounded. Sidewall heaters 121a to 121c are embedded in the sidewall of the lower vessel 12. The sidewall heaters 121a to 121c heat the sidewall of the lower vessel 12 to a temperature of, for example, about 150°C, thereby suppressing adhesion of reaction by-products to the sidewall of the lower vessel 12. A temperature of about 150°C is an example of a first temperature. An opening 120 is formed in the sidewall of the lower vessel 12 for loading and unloading a substrate W. The opening 120 is opened and closed by a gate valve G.

[0013] The exhaust duct 13 is provided at the top of the lower chamber 12 and constitutes part of the sidewall of the processing chamber 11. In this embodiment, the exhaust duct 13 has a hollow rectangular cross section and is curved in an annular shape along the top of the lower chamber 12. A slit-shaped exhaust port 130 is formed in the exhaust duct 13 along the extension direction of the exhaust duct 13. The exhaust port 130 is disposed outside the area of ​​the substrate W, along the periphery of the substrate W accommodated in the processing chamber 11, and exhausts gas from the processing chamber 11. A sidewall heater 121d is embedded in the sidewall of the exhaust duct 13 facing the space inside the processing chamber 11. The sidewall heater 121d heats the sidewall of the exhaust duct 13 to a temperature of, for example, around 150°C, thereby suppressing adhesion of reaction by-products to the sidewall of the exhaust duct 13. The temperatures of the sidewall heaters 121a to 121d are controlled by the control device 100. The sidewall heaters 121a to 121d are an example of a first heater.

[0014] One end of an exhaust pipe 16 is connected to the exhaust duct 13. The other end of the exhaust pipe 16 is connected to an exhaust device 18 having a vacuum pump or the like via a pressure adjustment valve 17 such as an APC (Auto Pressure Controller) valve. The pressure adjustment valve 17 is controlled by the control device 100 and controls the pressure inside the processing chamber 11 to a preset pressure. Note that the exhaust pipe 16, the pressure adjustment valve 17, and the exhaust device 18 may be heated to a temperature of, for example, about 150° C. by a heater (not shown) to suppress adhesion of reaction by-products.

[0015] A support structure 20 on which the substrate W is placed is provided within the processing vessel 11. The support structure 20 has a stage 21 and a support portion 22. The stage 21 is made of a metal such as aluminum, and the substrate W is placed on the upper surface of the stage 21. The support portion 22 is made of a metal such as aluminum, and is cylindrical, and supports the stage 21 from below.

[0016] A stage heater 24 is embedded in the stage 21. The stage heater 24 heats the substrate W placed on the stage 21 in accordance with the power supplied thereto. When forming an organic film, the substrate W is heated to a temperature suitable for vapor deposition polymerization (e.g., 60°C to 100°C). The power supplied to the stage heater 24 is controlled by the control device 100. The temperature suitable for vapor deposition polymerization is an example of the second temperature.

[0017] Furthermore, a flow path 25 through which a heat medium flows is formed within the stage 21. A temperature control mechanism such as a chiller unit (not shown) is connected to the flow path 25 via pipes 26a and 26b. The heat medium adjusted to a predetermined temperature by the temperature control mechanism is supplied to the flow path 25 via pipe 26a, and the heat medium that has flowed through the flow path 25 is returned to the temperature control mechanism via pipe 26b. The temperature of the stage 21 is controlled by the heat medium circulating within the flow path 25. The temperatures of the temperature control mechanism and the heat medium are controlled by the control device 100.

[0018] An annular edge ring 23 is removably disposed on the upper surface of the stage 21 around the periphery of the substrate W placed on the stage 21 .

[0019] The support part 22 is disposed in the lower container 12 so as to pass through an opening formed in the bottom of the lower container 12. A flange 61 made of a conductive material is connected to the lower end of the support part 22. The upper end of a shaft 62 is connected to the lower surface of the flange 61. The lower end of the shaft 62 is connected to a lift mechanism 63. The lift mechanism 63 raises and lowers the shaft 62. As the shaft 62 is raised and lowered by the lift mechanism 63, the support structure 20 rises and lowers integrally with the flange 61. The lift mechanism 63 controls the distance between the substrate W placed on the stage 21 and a top plate 40, which will be described later.

[0020] The bottom of the lower chamber 12 and a flange 61 are connected via a metal bellows 60. This maintains airtightness inside the processing chamber 11 even when the support structure 20 is raised and lowered by the lift mechanism 63. The bellows 60 and the flange 61 are grounded via the processing chamber 11. The stage 21 is connected to the flange 61 via a support 22 and is grounded via the flange 61.

[0021] A top plate 40 is provided above the annular exhaust duct 13. The top plate 40 is supported by an insulator 14 arranged above the exhaust duct 13. The insulator 14 and the top plate 40 form a ceiling of the processing vessel 11. Within the processing vessel 11, the space between the substrate W placed on the stage 21 and the top plate 40 is defined as a processing space.

[0022] A diffusion chamber 42 for diffusing gas is formed within the top plate 40. A pipe 34 for supplying gas into the diffusion chamber 42 is connected to the upper surface of the top plate 40. A plurality of outlet ports 41 communicating with the diffusion chamber 42 are formed on the lower surface of the top plate 40. The gas supplied from the pipe 34 into the diffusion chamber 42 diffuses within the diffusion chamber 42 and is supplied from the outlet ports 41 into the processing space.

[0023] 2 is a diagram showing an example of the surface of the top plate 40 facing the processing space. In FIG. 2, the outline of the substrate W placed on the stage 21 is shown by a dashed line. In this embodiment, the multiple outlets 41 are arranged along the periphery of the substrate W placed on the stage 21, for example, as shown in FIG. 2, and supply the gas supplied into the diffusion chamber 42 to outside the area of ​​the substrate W within the processing vessel 11. The outlets 41 may be arranged directly above the edge ring 23 as long as they are configured to eject the gas outside the area of ​​the substrate W. The top plate 40 is an example of a gas supply unit.

[0024] Continuing the explanation, returning to FIG. 1 , a heat shield 50 is provided on the stage 21 outside the edge ring 23 so as to cover the substrate W placed on the stage 21. The heat shield 50 is made of a material with high thermal conductivity, such as aluminum. The thickness of the heat shield 50 is preferably 3 mm or more and 8 mm or less. This allows a balance between shielding properties and thermal conductivity to be achieved.

[0025] FIG. 3 is a cross-sectional view showing an example of the structure of the heat shield 50. FIG. 4 is a plan view showing an example of the structure of the heat shield 50. As shown in FIG. 3 , the heat shield 50 includes a plate-shaped portion 51, a cylindrical portion 52, and a flange portion 53. As shown in FIG. 4 , the plate-shaped portion 51 is formed in a substantially circular plate shape and has a plurality of through holes 51 a penetrating in the thickness direction of the plate-shaped portion 51. In this embodiment, the aperture ratio of the through holes 51 a in the plate-shaped portion 51 is 10% or more and 20% or less. This allows the heat shield 50 to cover the substrate W while efficiently supplying gas for depositing an organic film on the substrate W between the substrate W and the heat shield 50. The cylindrical portion 52 is cylindrically formed along the outer periphery of the plate-shaped portion 51. The plate-shaped portion 51 is provided at the upper end of the cylindrical portion 52. The flange portion 53 is annular and is provided at the lower end of the cylindrical portion 52. Furthermore, when the heat shield 50 is placed on the stage 21, the flange portion 53 extends from the cylindrical portion 52 to the outside of the stage 21 along the surface of the stage 21 on which the substrate W is placed.

[0026] 1, when an organic film is formed on the substrate W, the heat shield 50 is placed on the stage 21 and is in contact with the stage 21. On the other hand, when an organic film is formed on the substrate W, the heat shield 50 is not in contact with the processing vessel 11.

[0027] A step 122 that protrudes toward the support structure 20 is provided on the side wall of the lower container 12. When viewed from above, the outer shape of the heat shield 50 is larger than the outer shape of the stage 21. Therefore, when the support structure 20 descends, the heat shield 50 rests on the step 122, and the heat shield 50 and the stage 21 are separated from each other.

[0028] Here, during the formation of an organic film, the temperature of the substrate W is controlled to, for example, 60°C to 100°C. However, the exhaust duct 13 and the sidewall of the lower chamber 12 are heated to around 150°C by the sidewall heaters 121a to 121d. Therefore, radiant heat from the exhaust duct 13 and the sidewall of the lower chamber 12 may cause the temperature near the edge of the substrate W to be higher than that near the center of the substrate W. This may result in the thickness of the organic film formed near the center and near the edge of the substrate W differing.

[0029] Therefore, in this embodiment, the substrate W is covered with the heat shield 50 during film formation, thereby suppressing radiant heat from the exhaust duct 13 and the sidewall of the lower chamber 12. Furthermore, during film formation, the heat shield 50 is in contact with the stage 21, but not with the processing chamber 11, as shown in FIG. 1 , for example. Therefore, the entire heat shield 50 has approximately the same temperature as the stage 21. This improves the uniformity of the temperature distribution of the substrate W, and can improve the uniformity of the thickness of the organic film formed on the substrate W.

[0030] A top plate heater 400 is provided on the upper surface of the top plate 40. The top plate heater 400 heats the top plate 40 to a temperature of, for example, about 150° C., thereby suppressing adhesion of reaction by-products to the inside of the diffusion chamber 42 and the underside of the top plate 40. The temperature of the top plate heater 400 is controlled by the control device 100.

[0031] Valves 33a, 33b, and 33c are connected to pipe 34. Raw material supply source 30a is connected to valve 33a via mass flow controller (MFC) 32a and vaporizer 31a. Raw material supply source 30b is connected to valve 33b via MFC 32b and vaporizer 31b. A plasma generator 39 is connected to valve 33c.

[0032] The raw material supply source 30a is a supply source of a first monomer such as isocyanate. The vaporizer 31a vaporizes the liquid first monomer supplied from the raw material supply source 30a. The MFC 32a controls the flow rate of the first monomer gas vaporized by the vaporizer 31a. The valve 33a controls the supply and stop of the first monomer gas to the pipe 34.

[0033] The raw material supply source 30b is a supply source of a second monomer such as an amine. The vaporizer 31b vaporizes the liquid second monomer supplied from the raw material supply source 30b. The MFC 32b controls the flow rate of the second monomer gas vaporized by the vaporizer 31b. The valve 33b controls the supply and stop of the second monomer gas to the pipe 34.

[0034] The first monomer gas supplied from the raw material supply source 30a and the second monomer gas supplied from the raw material supply source 30b are supplied into the diffusion chamber 42 via the pipe 34 and are mixed while diffusing within the diffusion chamber 42. The mixed gas of the first monomer and the second monomer is then supplied into the processing vessel 11 via the outlet 41, and an organic film of a polymer having a polyurea bond is formed on the substrate W placed on the stage 21.

[0035] The plasma generator 39 generates plasma from the cleaning gas, and supplies activated species and the like contained in the plasma into the diffusion chamber 42 of the top plate 40 via the piping 34. The activated species and the like supplied into the diffusion chamber 42 are then supplied into the processing vessel 11 via the outlet 41. Examples of the cleaning gas that can be used include oxygen gas and halogen-containing gases. Examples of the halogen-containing gas that can be used include chlorine gas, hydrogen chloride gas, bromine gas, hydrogen bromide gas, hydrogen iodide gas, and nitrogen fluoride gas.

[0036] After organic films are formed on several substrates W by vapor deposition polymerization, the cleaning gas is converted into plasma by the plasma generator 39, and activated species and the like contained in the plasma are supplied into the diffusion chamber 42 and the processing vessel 11. Then, deposits attached to the diffusion chamber 42, the heat insulating member 50, and the inside of the processing vessel 11 are removed by the activated species and the like.

[0037] The control device 100 has a memory, a processor, and an input / output interface. The processor in the control device 100 reads and executes programs and recipes stored in the memory, thereby controlling each part of the device main body 10 via the input / output interface.

[0038] [Movement of Heat Shield 50] When an organic film is formed on a substrate W, the stage 21 is in the position shown in FIG. 1 , for example, with the heat shield 50 placed on the stage 21. On the other hand, when the substrate W is loaded or unloaded, the stage 21 is lowered to the position shown in FIG. 5 , for example. As the stage 21 is lowered, the flange 53 of the heat shield 50 rests on the step 122 of the processing vessel 11, and the stage 21 and the heat shield 50 are separated from each other. This allows the substrate W to be loaded or unloaded from the stage 21. The position of the stage 21 when an organic film is formed on the substrate W is an example of a first position, and the position of the stage 21 when the substrate W is loaded or unloaded is an example of a second position.

[0039] 6 , when the inside of the processing vessel 11 is cleaned, the stage 21 is lowered to a position that is lower than the position of the stage 21 when an organic film is formed on the substrate W and higher than the position of the stage 21 when the substrate W is loaded and unloaded. The position of the stage 21 when the inside of the processing vessel 11 is cleaned is an example of the third position. As a result, when the inside of the processing vessel 11 is cleaned, the heat shield 50 comes into contact with the step portion 122, and the heat shield 50 is heated via the step portion 122 to a temperature approximately equal to that of the sidewall of the processing vessel 11. This allows reaction by-products adhering to the heat shield 50 to be efficiently removed.

[0040] When cleaning the inside of the processing vessel 11, the position of the stage 21 is set to a position higher than the position of the stage 21 when the substrate W is loaded and unloaded. This makes it possible to shorten the distance between the top plate 40 and the stage 21 compared to the position of the stage 21 when the substrate W is loaded and unloaded, allowing the activated species supplied from the top plate 40 to efficiently reach the surface of the stage 21. This makes it possible to efficiently remove reaction by-products attached to the upper surface of the stage 21 and the edge ring 23.

[0041] The embodiment has been described above. As described above, the film formation apparatus in the embodiment includes a processing vessel (processing vessel 11), a stage (stage 21), a heat shield (heat shield 50), a gas supply unit (top plate 40), first heaters (sidewall heaters 121a-121d), and a second heater (stage heater 24). The stage is housed within the processing vessel, and a substrate (substrate W) is placed on it. The heat shield has multiple through-holes (through-hole 51a) and is disposed on the stage so as to cover the substrate placed on the stage. The gas supply unit supplies a first monomer gas and a second monomer gas into the processing vessel, and a polymer organic film is formed on the substrate by a polymerization reaction between the first monomer and the second monomer. The first heater heats the sidewall of the processing vessel to a first temperature. The second heater heats the stage to a second temperature lower than the first temperature. When a polymer organic film is formed on the substrate, the heat shield contacts the stage but does not contact the processing chamber, thereby improving the uniformity of the thickness of the organic film formed on the substrate W.

[0042] In the above embodiment, the heat shield 50 has a plate-like portion (plate-like portion 51) having a plurality of through holes formed therein and positioned opposite the substrate, and a cylindrical portion (cylindrical portion 52) positioned between the plate-like portion and the stage, thereby facilitating the formation of the heat shield 50.

[0043] In the above embodiment, the aperture ratio of the through holes in the plate-shaped portion is 10% or more and 20% or less, which allows the gas for depositing an organic film on the substrate W to be efficiently supplied between the heat shield 50 and the substrate W while covering the substrate W.

[0044] The film forming apparatus in the above-described embodiment further includes a lift mechanism (lift mechanism 63) that raises and lowers the stage. The heat shield has a flange (flange 53) that extends from the cylindrical portion to the outside of the stage along the surface of the stage on which the substrate is placed. The processing vessel has a step (step 122) provided on the inner wall. When loading and unloading a substrate, the lift mechanism lowers the stage and places the flange of the heat shield on the step, thereby separating the heat shield from the stage. This allows the substrate W to be loaded and unloaded.

[0045] In the above embodiment, the flange is provided at the lower end of the cylindrical portion, which allows the heat shield 50 to be placed on the step portion 122 with a short vertical movement distance of the stage 21.

[0046] In the above embodiment, the lift mechanism lowers the stage during cleaning of the processing vessel, and places the flange of the heat shield on the stepped portion, thereby heating the heat shield to the first temperature via the stepped portion, thereby efficiently removing reaction by-products adhering to the heat shield 50.

[0047] In the above embodiment, the lift mechanism controls the position of the stage during cleaning of the processing vessel so that the stage is at a third position that is lower than the first position used for processing the substrate and higher than the second position used for loading and unloading the substrate, thereby enabling efficient removal of reaction by-products adhering to the upper surface of the stage 21.

[0048] In the above embodiment, the heat shield is made of aluminum, which makes it possible to maintain a more uniform temperature throughout the heat shield 50 and improve the uniformity of the temperature distribution of the substrate W.

[0049] In the above embodiment, the thickness of the heat shield is 3 mm or more and 8 mm or less, which makes it possible to obtain a good balance between the heat shielding properties and the thermal conductivity.

[0050] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0051] For example, in the above-described embodiment, the heat shield 50 has a structure including the plate-shaped portion 51 and the cylindrical portion 52, but the disclosed technology is not limited to this. In another embodiment, the heat shield 50 may have a flange portion 53 and a dome-like shape including a plurality of through holes 51 a, as shown in Fig. 7 .

[0052] Furthermore, in the heat shield 50 of the above-described embodiment, the plurality of through holes 51 a is formed only in the plate-like portion 51, but the disclosed technology is not limited to this. As another embodiment, for example, as shown in FIGS. 8 and 9 , the cylindrical portion 52 may also be formed with a plurality of through holes 51 b penetrating the cylindrical portion 52 in the thickness direction. In this case, it is preferable that the plurality of through holes 51 b be formed closer to the lower end of the cylindrical portion 52 than to the upper end. This generates a gas flow that flows in from the through holes 51 a in the plate-like portion 51, passes through the space between the plate-like portion 51 and the substrate W, and reaches the through holes 51 b, as shown by the dotted arrows in FIG. 8 . This makes it possible to prevent gas from accumulating within the heat shield 50.

[0053] Furthermore, in the heat shield 50 of the above-described embodiment, the flange portion 53 is provided at the lower end of the cylindrical portion 52, but the disclosed technology is not limited to this. As another embodiment, for example, as shown in Fig. 10, the flange portion 53 may be provided between the upper and lower ends of the cylindrical portion 52. Note that the flange portion 53 may also be provided at the upper end of the cylindrical portion 52.

[0054] Furthermore, in the heat shield 50 of the above-described embodiment, as shown in FIG. 4 , for example, an annular flange 53 is provided at the lower end of the cylindrical portion 52. However, the disclosed technology is not limited thereto. For example, as shown in FIG. 11 , multiple protrusions 53 a may be provided at the lower end of the cylindrical portion 52 instead of the annular flange 53 if the heat shield 50 is to be placed on the stepped portion 122 of the lower vessel 12 when the stage 21 is lowered. Note that, when the stepped portion 122 in the processing vessel 11 comes into contact with the protrusions 53 a, heat from the stepped portion 122 of the lower vessel 12 is transferred to the heat shield 50 via the protrusions 53 a. Therefore, depending on the thermal conductivity of the heat shield 50 and the protrusions 53 a, a temperature distribution in the heat shield 50 may become uneven. In this case, the number of protrusions 53 a may be increased (three in the example of FIG. 11 ). This reduces the uneven temperature distribution in the heat shield 50.

[0055] In the above-described embodiment, a polymer film having a urea bond (—NH—CO—NH—) is formed on the surface of the substrate W using an isocyanate as the first monomer and an amine as the second monomer. However, the disclosed technology is not limited to this. For example, a polymer film having a 2-aminoethanol bond (—NH—CH2-CH(OH)—) may be formed on the surface of the substrate W using an epoxide as the first monomer and an amine as the second monomer. Alternatively, a polymer film having a urethane bond (—NH—CO—O—) may be formed on the surface of the substrate W using an isocyanate as the first monomer and an alcohol as the second monomer. Alternatively, a polymer film having an amide bond (—NH—CO—) may be formed on the surface of the substrate W using an acyl halide as the first monomer and an amine as the second monomer. Alternatively, a polymer film having an imide bond (—CO—N(—)—CO—) may be formed on the surface of the substrate W using a carboxylic anhydride as the first monomer and an amine as the second monomer.

[0056] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0057] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0058] (Supplementary Note 1) A film formation apparatus comprising: a processing vessel; a stage housed in the processing vessel and on which a substrate is placed; a heat shield having a plurality of through holes and arranged on the stage so as to cover the substrate placed on the stage; a gas supply unit that supplies a first monomer gas and a second monomer gas into the processing vessel and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer; a first heater that heats a sidewall of the processing vessel to a first temperature; and a second heater that heats the stage to a second temperature lower than the first temperature, wherein the heat shield is in contact with the stage but not with the processing vessel when the polymer organic film is formed on the substrate. (Supplementary Note 2) The film formation apparatus according to Supplementary Note 1, wherein the heat shield has: a plate-shaped portion having a plurality of through holes formed therein and arranged at a position facing the substrate; and a cylindrical portion that is arranged between the plate-shaped portion and the stage. (Supplementary Note 3) The film formation apparatus according to Supplementary Note 2, wherein an opening ratio of the through holes in the plate-shaped portion is 10% or more and 20% or less. (Supplementary Note 4) The film formation apparatus according to Supplementary Note 2 or 3, wherein the cylindrical portion has a plurality of through holes. (Supplementary Note 5) The film formation apparatus according to Supplementary Note 4, wherein the plurality of through holes in the cylindrical portion are formed at a position closer to a lower end of the cylindrical portion than to an upper end of the cylindrical portion. (Supplementary Note 6) The film formation apparatus according to any one of Supplementary Notes 2 to 5, further comprising a lift mechanism that raises and lowers the stage, wherein the heat shield has a flange portion that extends from the cylindrical portion to the outside of the stage along a surface of the stage on which the substrate is placed, and the processing vessel has a step portion provided on an inner wall, and the lift mechanism lowers the stage when loading and unloading the substrate, and places the flange portion of the heat shield on the step portion to separate the heat shield from the stage. (Supplementary Note 7) The film formation apparatus according to Supplementary Note 6, wherein the flange portion is provided at a lower end of the cylindrical portion. (Supplementary Note 8) The film formation apparatus according to Supplementary Note 6 or 7, wherein the lift mechanism lowers the stage during cleaning of the inside of the processing vessel, and places the flange portion of the heat shield on the step portion, thereby heating the heat shield to the first temperature via the step portion.(Supplementary Note 9) The film formation apparatus according to Supplementary Note 8, wherein the lift mechanism controls the position of the stage during cleaning of the inside of the processing vessel so that the height of the stage is at a third position that is lower than a first position during processing of the substrate and higher than a second position during loading and unloading of the substrate. (Supplementary Note 10) The film formation apparatus according to any one of Supplementary Notes 1 to 9, wherein the heat insulating member is made of aluminum. (Supplementary Note 11) The film formation apparatus according to any one of Supplementary Notes 1 to 10, wherein the heat insulating member has a thickness of 3 mm or more and 5 mm or less.

[0059] W substrate 1 film forming apparatus 10 apparatus main body 11 processing chamber 12 lower chamber 122 step portion 13 exhaust duct 130 exhaust port 20 support structure 21 stage 22 support portion 23 edge ring 24 stage heater 30 raw material supply source 31 vaporizer 32 MFC 33 valve 39 plasma generator 40 top plate 41 discharge port 42 diffusion chamber 400 top plate heater 50 heat shield member 51 plate-shaped portion 51a through hole 51b through hole 52 cylindrical portion 53 flange portion 53a protrusion portion 63 lift mechanism 100 control device

Claims

1. A film formation apparatus comprising: a processing vessel; a stage contained within the processing vessel and on which a substrate is placed; a heat shield having a plurality of through holes and disposed on the stage so as to cover the substrate placed on the stage; a gas supply unit that supplies a first monomer gas and a second monomer gas into the processing vessel and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer; a first heater that heats a sidewall of the processing vessel to a first temperature; and a second heater that heats the stage to a second temperature lower than the first temperature, wherein the heat shield comes into contact with the stage but does not come into contact with the processing vessel when the polymer organic film is formed on the substrate.

2. The film forming apparatus according to claim 1, wherein the heat shielding member has a plate-like portion in which a plurality of the through holes are formed and which is positioned opposite the substrate, and a cylindrical portion which is positioned between the plate-like portion and the stage.

3. The film forming apparatus according to claim 2, wherein the aperture ratio of the through holes in the plate-like portion is 10% or more and 20% or less.

4. The film forming apparatus according to claim 2 or 3, wherein the cylindrical portion has a plurality of through holes.

5. The film forming apparatus according to claim 4, wherein the plurality of through holes in the cylindrical portion are formed at a position closer to a lower end than to an upper end of the cylindrical portion.

6. The film formation apparatus of claim 2, further comprising a lift mechanism for raising and lowering the stage, wherein the heat shield has a flange portion extending from the cylindrical portion to the outside of the stage along a surface of the stage on which the substrate is placed, and the processing vessel has a step portion provided on an inner wall, and the lift mechanism lowers the stage when the substrate is loaded and unloaded, and places the flange portion of the heat shield on the step portion, thereby separating the heat shield from the stage.

7. The film forming apparatus according to claim 6, wherein the flange portion is provided at the lower end of the cylindrical portion.

8. A film forming apparatus as described in claim 6 or 7, wherein the lift mechanism lowers the stage during cleaning of the processing vessel and places the flange portion of the heat shield on the step portion, thereby heating the heat shield to the first temperature via the step portion.

9. The film forming apparatus of claim 8, wherein the lift mechanism controls the position of the stage during cleaning of the processing vessel so that the height of the stage is at a third position that is lower than a first position when processing the substrate and higher than a second position when loading and unloading the substrate.

10. The film forming apparatus according to claim 1, wherein the heat insulating member is made of aluminum.

11. The film forming apparatus according to claim 1, wherein the thickness of the heat insulating member is 3 mm or more and 5 mm or less.

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