Semiconductor device, semiconductor device manufacturing method, photoelectric conversion system, and mobile body

Abstract

This semiconductor device has a structure in which are laminated: a plurality of semiconductor layers including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; and an insulating structure for insulating the plurality of semiconductor layers from each other. The insulating structure includes: a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer; and a second insulating layer between the second semiconductor layer and the third semiconductor layer. The semiconductor device comprises: a conductive through via that penetrates the second semiconductor layer; a wiring pattern that is disposed in the first insulating layer; and a conductive connection member that is disposed in the first insulating layer so as to electrically connect the through via and the wiring pattern.

Description

Semiconductor device, semiconductor device manufacturing method, photoelectric conversion system, and mobile body

[0001] The present invention relates to a semiconductor device, a method for manufacturing a semiconductor device, a photoelectric conversion system, and a mobile object.

[0002] Patent Document 1 describes a process of forming a structure having a silicon substrate and a wiring layer, then forming a through hole that penetrates the silicon substrate and reaches an electrode in the wiring layer, forming an insulating film on the side of the through hole, and then forming a through via in the through hole. However, when a thin and deep through hole is required, forming the through hole by etching becomes difficult. Furthermore, when forming a through hole that reaches an electrode or a wiring pattern, etching damage to the electrode or the wiring pattern can reduce reliability.

[0003] JP 2016-171297 A

[0004] One aspect of the present invention provides a semiconductor device having a structure that is easy to manufacture and has excellent reliability.

[0005] One aspect of the present invention relates to a semiconductor device having a stacked structure of a plurality of semiconductor layers including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, and an insulating structure that insulates the plurality of semiconductor layers from one another, the insulating structure including a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer, and the second insulating layer between the second semiconductor layer and the third semiconductor layer, and the semiconductor device includes a conductive through via that penetrates the second semiconductor layer, a wiring pattern disposed in the first insulating layer, and a conductive connecting member disposed in the first insulating layer so as to electrically connect the through via and the wiring pattern.

[0006] Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which the same or similar elements are designated by the same reference numerals.

[0007] 11A , 11B, 11C, 11D, 11E, 11F, 11G, 11H ... 1 is a cross-sectional view schematically showing a method for manufacturing the photoelectric conversion device of the first embodiment; 2 is a cross-sectional view schematically showing a cross-sectional structure of a photoelectric conversion device as a semiconductor device of a second modification; 3 is a cross-sectional view schematically showing a cross-sectional structure of a photoelectric conversion device as a semiconductor device of a third modification; 4 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a second modification; 5 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a second modification; 6 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a second modification; 7 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a second modification; 8 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a second modification; 9 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a third modification; 10 is a cross-sectional view schematically showing a method for manufacturing a photoelectric conversion device as a semiconductor device of a second modification; 11 is a diagram showing the configuration of a photoelectric conversion system according to a second embodiment; 12 is a diagram showing the configuration of a photoelectric conversion system and a moving body of a third embodiment; 13 is a diagram showing the configuration of a photoelectric conversion system and a moving body of a third embodiment; 14 is a diagram showing the configuration of a photoelectric conversion system according to a fourth embodiment; 15 is a diagram showing the configuration of an endoscopic surgery system as a photoelectric conversion system of a fifth embodiment; 16 is a diagram showing the configuration of a photoelectric conversion system according to a sixth embodiment; 17 is a diagram showing the configuration of a photoelectric conversion system according to a sixth embodiment; 18 is a diagram showing the configuration of a photoelectric conversion system according to a seventh embodiment; 19 is a diagram showing the configuration of a photoelectric conversion system according to a seventh embodiment. FIG. 13 is a diagram showing the configuration of an X-ray CT device as a photoelectric conversion system according to an eighth embodiment.

[0008] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0009] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating specific directions or positions (for example, "upper," "lower," "right," "left," and other terms including these terms) will be used as necessary. The use of these terms is intended to facilitate understanding of the embodiments with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present invention.

[0010] In this specification, a planar view refers to a view of a semiconductor device from a direction perpendicular to a major surface of one semiconductor layer (one of the two widest surfaces, preferably the flatter surface), and is synonymous with an orthogonal projection onto the major surface. A cross-sectional view refers to a surface in a direction perpendicular to the major surface. When the major surface is rough when viewed microscopically, the planar view is defined based on the major surface when viewed macroscopically.

[0011] In the following exemplary embodiment, a semiconductor device configured as a photoelectric conversion device having an avalanche photodiode (hereinafter also referred to as an APD) as a photoelectric conversion element is described, but the semiconductor device may also be configured as a semiconductor device without a photoelectric conversion function.

[0012] In the following description of exemplary embodiments, the anode of the avalanche photodiode is set to a fixed potential, and a signal is extracted from the cathode side. Therefore, the first conductivity type semiconductor region having majority carriers of charges of a first polarity, the same as the signal charge, is an N-type semiconductor region, and the second conductivity type semiconductor region having majority carriers of charges of a second polarity, different from the signal charge, is a P-type semiconductor region. Note that the present invention also applies when the cathode of the APD is set to a fixed potential, and a signal is extracted from the anode side. In this case, the first conductivity type semiconductor region having majority carriers of charges of a first polarity, the same as the signal charge, is a P-type semiconductor region, and the second conductivity type semiconductor region having majority carriers of charges of a second polarity, different from the signal charge, is an N-type semiconductor region. The following description will be given of a case where one node of the APD is set to a fixed potential, but the potentials of both nodes may fluctuate.

[0013] In this specification, when the term "impurity concentration" is simply used, it means the net impurity concentration minus the amount compensated by impurities of the opposite conductivity type. In other words, "impurity concentration" refers to the net doping concentration. A region where the concentration of P-type added impurities is higher than the concentration of N-type added impurities is a P-type semiconductor region. Conversely, a region where the concentration of N-type added impurities is higher than the concentration of P-type added impurities is an N-type semiconductor region.

[0014] First, a basic configuration and driving method common to photoelectric conversion devices and driving methods thereof according to a plurality of embodiments to be described later will be described with reference to FIGS. 1, 2, 3, 4, 5, 6A, and 6B.

[0015] FIG. 1 is a diagram illustrating the basic configuration of a photoelectric conversion device 100 according to one embodiment. Here, an example will be described in which the photoelectric conversion device 100 is configured as a stacked-type photoelectric conversion device. The photoelectric conversion device 100 may be configured by stacking multiple substrates, including, for example, a sensor substrate 11, a first circuit substrate 21, and a second circuit substrate 31, and electrically connecting the multiple substrates. The sensor substrate 11 may have a pixel array region 12 in which multiple photoelectric conversion elements 102 (described below) are arranged. The sensor substrate 11 may also have a first semiconductor layer having the photoelectric conversion elements 102 (described below) and a first wiring structure. The first circuit substrate 21 may have a first circuit region 22 in which circuits such as a first signal processing unit 103A (described below) are arranged. The first circuit substrate 21 may also have a second semiconductor layer in which multiple elements (e.g., transistors) constituting circuits such as the first signal processing unit 103A (described below) are arranged, and a second wiring structure. The second circuit board 31 may have a second circuit region 32 in which circuits such as a second signal processing unit 103B, a vertical scanning circuit 110, a horizontal scanning circuit 111, and a readout circuit 112, which will be described later, are arranged. The second circuit board 31 may also have a second semiconductor layer in which a plurality of elements (e.g., transistors) constituting circuits such as the second signal processing unit 103B, which will be described later, are arranged, and a second wiring structure. The photoelectric conversion device described as the following embodiment may be, for example, a back-illuminated photoelectric conversion device, but the photoelectric conversion device according to the present invention may also be configured as a front-illuminated photoelectric conversion device.

[0016] The sensor substrate 11, the first circuit substrate 21, and the second circuit substrate 31 may each be a chip diced from a wafer, but these substrates are not limited to chips. For example, each substrate may be a wafer. Furthermore, multiple substrates may be stacked in the wafer state and then diced, or multiple chips may be stacked or joined after being diced into chips.

[0017] 2 is a diagram showing an example of the configuration of the sensor substrate 11. In the pixel array region 12, a plurality of photoelectric conversion elements 102 can be arranged in a two-dimensional array to form a plurality of rows and a plurality of columns. Each photoelectric conversion element 102 can include an avalanche photodiode (APD). Each photoelectric conversion element 102 forms a part of a pixel 101.

[0018] The pixels 101 arranged in the pixel array region 12 may be pixels for forming an image. However, when the sensor substrate 11 or the photoelectric conversion device 100 is applied to TOF (Time of Flight), each pixel 101 does not necessarily have to be a pixel for forming an image. In other words, the pixel 101 may be a pixel for measuring the time and amount of light that arrives.

[0019] 3 is a diagram showing an example configuration of the first circuit board 21. The first circuit board 21 may include, for example, a first signal processing unit 103A that processes a signal (electrical signal) generated in response to an electric charge (signal charge) generated by photoelectric conversion in the photoelectric conversion element 102. The first signal processing unit 103A may include, for example, a quench element 202 (described later) and a waveform shaping unit 210 (described later) for each pixel 101.

[0020] 4 is a diagram showing an example configuration of the second circuit board 31. The second circuit board 31 may include a second signal processing unit 103B, a readout circuit 112, a control pulse generation unit 115, a horizontal scanning circuit 111, signal lines 113 and 116, a vertical scanning circuit 110, and an output circuit 114. The second signal processing unit 103B may include, for example, a counter circuit 211 (described later) and a selection circuit 212 (described later) for each pixel 101, as well as a plurality of signal lines 113 and a plurality of drive lines 116 arranged along the pixel array region 12. The vertical scanning circuit 110 may be configured to receive a first control pulse supplied from the control pulse generation unit 115, generate a second control pulse, and supply the second control pulse to each pixel 101. The vertical scanning circuit 110 may include, for example, logic circuits such as a shift register and an address decoder. Signals output from the photoelectric conversion elements 102 of the pixels 101 may be processed by a signal processing unit 103 provided corresponding to the pixels 101. The signal processing unit 103 may include a counter having a memory. The horizontal scanning circuit 111 may be configured to supply the signal processing unit 103 with a third control pulse that sequentially selects each column in order to read out signals from the counters (memories) of the pixels 101 that hold digital signals. Signals are output to the multiple signal lines 113 from a second signal processing unit 103B assigned to the pixels 101 in the row selected by the vertical scanning circuit 110. The signals output to the multiple signal lines 113 may be output via an output circuit 114 to a recording unit or signal processing unit external to the photoelectric conversion device 100.

[0021] 2, the photoelectric conversion elements 102 or pixels 101 may be arranged one-dimensionally in the pixel array region 12. One set of signal processing units 103A and 103B may be assigned to at least two photoelectric conversion elements 102 or pixels 101.

[0022] 2 , 3 , and 4 , a plurality of first signal processing circuits 103A and a plurality of second signal processing circuits 103B may be arranged in a region overlapping the pixel array region 12 in a planar view. Then, a vertical scanning circuit 110, a horizontal scanning circuit 111, a readout circuit 112, an output circuit 114, and a control pulse generating unit 115 may be arranged so as to overlap a region between the outer edge of the sensor substrate 11 and the outer edge of the pixel array region 12 in a planar view. In other words, the vertical scanning circuit 110, the horizontal scanning circuit 111, the readout circuit 112, the output circuit 114, and the control pulse generating unit 115 may be arranged in a region overlapping the peripheral region of the sensor substrate 11 in a planar view.

[0023] FIG. 5 illustrates an equivalent circuit of one pixel 101 that may be configured with one photoelectric conversion element 102, one first signal processing unit 103A, and one second signal processing circuit 103B. The photoelectric conversion element 102 includes an APD 201, which generates charge pairs in response to incident light through photoelectric conversion. A voltage VL (first voltage) is supplied to the anode of the APD 201. A voltage VH (second voltage) higher than the voltage VL supplied to the anode may be supplied to the cathode of the APD 201. A reverse bias voltage (predetermined voltage) that can cause the APD 201 to perform avalanche multiplication may be supplied between the anode and cathode. By supplying such a reverse bias voltage between the anode and cathode, charges generated by incident light may cause avalanche multiplication, generating an avalanche current.

[0024] A mode in which an APD is operated with a voltage between the anode and cathode greater than the breakdown voltage is called Geiger mode. A mode in which an APD is operated with a voltage between the anode and cathode close to or less than the breakdown voltage is called linear mode. An APD operated in Geiger mode is called a SPAD. For example, the voltage VL (first voltage) is −30 V and the voltage VH (second voltage) is 1 V. The APD 201 may be operated in either linear mode or Geiger mode.

[0025] The first signal processing unit 103A may include a quench element 202 and a waveform shaping unit 210. The quench element 202 may be arranged to connect the APD 201 to a power supply that supplies the voltage VH. The quench element 202 functions as a load circuit (quench circuit) during signal multiplication by avalanche multiplication, suppressing the voltage supplied to the APD 201 and suppressing avalanche multiplication (quench operation). The quench element 202 also functions to return the voltage supplied to the APD 201 to voltage VH by flowing a current equivalent to the voltage drop caused by the quench operation (recharge operation). The waveform shaping unit 210 may shape the potential change at the cathode of the APD 201 obtained during photon detection and output a pulse signal. For example, an inverter circuit may be used as the waveform shaping unit 210. In FIG. 5, the waveform shaping section 210 is configured with one inverter, but the waveform shaping section 210 may include a series connection of multiple inverters, or may include other circuits that have a waveform shaping effect.

[0026] The second signal processing unit 103B may include a counter circuit 211 and a selection circuit 212. The counter circuit 211 may count the pulse signals output from the waveform shaping unit 210 and hold the count value. The counter circuit 211 may be configured to reset the signal held in the counter circuit 211 when a control pulse pRES is supplied via a drive line 213. The selection circuit 212 may receive a control pulse pSEL from the vertical scanning circuit 110 via a drive line 214, and may switch between electrical connection and disconnection between the counter circuit 211 and the signal line 113. The selection circuit 212 may include, for example, a buffer circuit for outputting a signal.

[0027] A switch such as a transistor may be disposed between the quench element 202 and the APD 201 and / or between the APD 201 and the waveform shaping unit 210 to control the electrical connection. Similarly, the supply of the voltage VH and / or the voltage VL to the APD 201 may be controlled by a switch such as a transistor.

[0028] The photoelectric conversion device 100 may be configured to acquire pulse detection timing using a time-to-digital converter (hereinafter referred to as TDC) and a memory instead of the counter circuit 211. The generation timing of the pulse signal output from the waveform shaping unit 210 may be converted into a digital signal by the TDC. A control pulse pREF (reference signal) may be supplied to the TDC from the vertical scanning circuit 110 via a drive line in order to measure the timing of the pulse signal. The TDC may acquire, as a digital signal, a signal obtained by converting the input timing of the signal output from each pixel via the waveform shaping unit 210 into a relative time based on the control pulse pREF.

[0029] Fig. 6B is a diagram schematically showing the relationship between the operation of the APD 201 and the output signal. Fig. 6A is a diagram showing the APD 201, the quench element 202, and the waveform shaping unit 210 excerpted from Fig. 5. Here, the input side of the waveform shaping unit 210 is referred to as node A, and the output side is referred to as node B. Fig. 6B shows the waveform changes of node A and node B in Fig. 6A.

[0030] Between time t0 and time t1, a potential difference of VH-VL is applied to the APD 201 in FIG. 6A. When a photon is incident on the APD 201 at time t1, an avalanche multiplication operation is triggered in the APD 201, an avalanche multiplication current flows through the quench element 202, and the voltage at node A drops. When the amount of voltage drop further increases and the potential difference applied to the APD 201 decreases, the avalanche multiplication operation of the APD 201 stops, as shown at time t2, and the voltage level at node A does not drop by more than a certain value. Thereafter, between time t2 and time t3, a current that compensates for the voltage drop from voltage VL flows through node A, and at time t3, node A settles to its original potential level. At this time, the portion of the output waveform at node A that exceeds a certain threshold is waveform-shaped by waveform shaping section 210 and output as a signal at node B.

[0031] The arrangement of the signal lines 113, the readout circuits 112, and the output circuits 114 is not limited to the arrangement illustrated in Fig. 4. For example, the signal lines 113 may be arranged to extend in the row direction, and the readout circuits 112 may be arranged at the ends of the signal lines 113.

[0032] FIG. 7 schematically illustrates a cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device according to the first embodiment. The photoelectric conversion device 100 may have a stacked structure including multiple semiconductor layers, including a first semiconductor layer SL1 and a second semiconductor layer SL2, and an insulating structure IST that insulates the multiple semiconductor layers from one another. The insulating structure IST may include a first insulating layer IL1 disposed between the first semiconductor layer SL1 and the second semiconductor layer SL2. The insulating structure IST may further include a second insulating layer IL2. The second semiconductor layer SL2 may be disposed between the first insulating layer IL1 and the second insulating layer IL2. The multiple semiconductor layers may further include a third semiconductor layer SL3, and the second insulating layer IL2 may be disposed between the second semiconductor layer SL2 and the third semiconductor layer SL3.

[0033] In another aspect, the photovoltaic device 100 may include a conductive through via 219 that penetrates the second semiconductor layer SL2 and a wiring pattern 217 that is disposed in the insulating structure 1ST. The photovoltaic device 100 may also include a conductive connecting member 215 that is disposed in the insulating structure 1ST so as to electrically connect the through via 219 and the wiring pattern 217.

[0034] The first insulating layer IL1 may include insulating layers IL11 and IL12 bonded to each other. The second insulating layer IL2 may include insulating layers IL21 and IL22 bonded to each other. The first semiconductor layer SL1 and insulating layer IL11 may form the sensor substrate 11. The second semiconductor layer SL2 and insulating layers IL12 and IL21 may form the first circuit board 21. The third semiconductor layer SL3 and insulating layer IL22 may form the second circuit board 31. A bonding electrode E11 may be disposed on the insulating layer IL11, and a bonding electrode E12 may be disposed on the insulating layer IL12, with the bonding electrodes E11 and E12 forming a metal bonding surface. A bonding electrode E21 may be disposed on the insulating layer IL21, and a bonding electrode E22 may be disposed on the insulating layer IL22, with the bonding electrodes E21 and E22 forming a metal bonding surface.

[0035] The photoelectric conversion device 100 or the first circuit board 21 may include a conductive through via 219 that penetrates the second semiconductor layer SL2. The through via 219 may be formed of, for example, tungsten, but may also be formed of other materials such as aluminum or copper. The through via 219 may be arranged to penetrate an insulator INS disposed in the through hole TH of the second semiconductor layer SL2. The photoelectric conversion device 100 or the first circuit board 21 may include a wiring pattern 217 disposed in the first insulating layer IL1 (insulating layer IL12). The wiring pattern 217 may be formed of, for example, copper or aluminum, but may also be formed of other materials. The photoelectric conversion device 100 or the first circuit board 21 may include a conductive connecting member 215 disposed in the first insulating layer IL1 (insulating layer IL12) to electrically connect the through via 219 and the wiring pattern 217. The connection member 215 may be made of, for example, tungsten, but may also be made of other materials such as aluminum or copper. The connection member 215 may be, for example, a plug.

[0036] The configuration in which the through via 219 is electrically connected to the wiring pattern 217 via the connecting member 215 makes it possible to reduce the height of the through via 219, in other words, to reduce the depth of the through hole for forming the through via 219. This is advantageous for stably forming a fine through via 219. Furthermore, such a structure is advantageous in that it does not cause etching damage to the wiring pattern 217 when forming the through hole for forming the through via 219 by etching.

[0037] Furthermore, when the wiring pattern 217 contains copper, it is advantageous to form the connection member 215 from a material that does not contain copper and to stop the dry etching process for forming the through hole for the through via 219 at the connection member 215. This is because, if etching is stopped at the copper-containing wiring pattern 217, the copper-containing wiring pattern 217 will be exposed to the etching environment for a long period of time, which may cause problems. More specifically, copper-containing substances that may be generated by exposing the copper-containing wiring pattern 217 to the etching environment are non-volatile and therefore are not exhausted from the chamber, but instead accumulate within the chamber and may react with various gases. Therefore, copper-containing substances accumulated within the chamber may cause fluctuations in the etching rate of the dry etching apparatus, i.e., may cause the process to become unstable.

[0038] 8 shows an enlarged schematic diagram of the configuration of the connection portion between the through via 219 and the connection member 215 in FIG. 8. As shown in FIG. 8, at the connection portion between the through via 219 and the connection member 215, the width of the connection member 215 can be made larger than the width of the through via 219. More specifically, the width of the connection member 215 on a plane P1 including the interface between the through via 219 and the connection member 215 can be made larger than the width of the through via 219 on the plane P1. This can relax the requirement for accuracy in alignment of the through via 219 with respect to the connection member 215.

[0039] 9 shows an enlarged schematic diagram of a modified example of the configuration of the connection portion between the through via 219 and the connection member 215 in FIG. 7. As shown schematically in FIG. 9, the width of the through via 219 at the connection portion between the through via 219 and the connection member 215 can be made larger than the width of the connection member 215. More specifically, the width of the through via 219 in a plane P2 including the end face of the through via 219 (the end face on the connection member 215 side) can be made larger than the width of the connection member 215 in the plane P2. This can relax the requirement for accuracy in alignment of the through via 219 with respect to the connection member 215.

[0040] 7 , 8 , and 9 , at the connection portion between the connection member 215 and the wiring pattern 217, the width of the wiring pattern 217 is preferably larger than the width of the connection member 215. This can relax the requirement for accuracy of alignment between the connection member 215 and the wiring pattern 217. Conversely, at the connection portion between the connection member 215 and the wiring pattern 217, the width of the connection member 215 may be larger than the width of the wiring pattern 217, and in this case, the requirement for accuracy of alignment between the connection member 215 and the wiring pattern 217 can also be relaxed.

[0041] 7, 8, and 9, the insulating structure IST may include a first film 218 having a first opening OP1, and a second film 216 having a second opening OP2 arranged to overlap the first film 218. The through via 219 may include a portion arranged in the first opening OP1, and the connecting member 215 may be arranged in the second opening OP2.

[0042] The through via 219 may have a tapered shape whose width decreases toward the connection member 215. The connection member 215 may have a tapered shape whose width decreases toward the through via 219. The through hole TH in the second semiconductor layer SL2 may have, for example, a tapered shape whose width increases toward the first semiconductor layer SL1, but may also have a tapered shape whose width decreases toward the first semiconductor layer SL1.

[0043] The thickness of the second semiconductor layer SL2 is preferably thinner than the thicknesses of the semiconductor layers excluding the second semiconductor layer SL among the plurality of semiconductor layers. For example, the thickness of the second semiconductor layer SL2 is preferably thinner than the thicknesses of the first semiconductor layer SL1 and the third semiconductor layer SL3. This is advantageous for reducing the height of the through via 219.

[0044] FIG. 10 schematically illustrates the cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device of a first modification. Matters not mentioned in the first modification may conform to the first embodiment schematically illustrated in FIG. 7 unless otherwise inconsistent. Even in the first modification, the photoelectric conversion device 100 may include a conductive through via 219 penetrating the second semiconductor layer SL2 and a wiring pattern 217 disposed within the insulating structure IST. The photoelectric conversion device 100 may also include a conductive connecting member 215 disposed within the insulating structure IST to electrically connect the through via 219 and the wiring pattern 217. The through via 219 may be disposed to connect the bonding electrode E12 and the connecting member 215. From another perspective, the through via 219 may be disposed to contact the bonding electrode E12 and the connecting member 215. The through via 219 may have a tapered shape that narrows toward the connecting member 215. The connecting member 215 may have a tapered shape that narrows toward the through via 219.

[0045] FIG. 11A is a schematic plan view illustrating a configuration of a photoelectric conversion device 100 according to an embodiment, and FIG. 11B is a schematic cross-sectional view taken along line B-B' in FIG. 11A . An exemplary configuration of a peripheral portion of the photoelectric conversion device 100 will be described with reference to FIGS. 11A and 11B . The photoelectric conversion device 100 may include a guard ring 41 disposed between the pixel array region 12 and an edge EP. The guard ring 41 may include a through via 219, a through via 219' that may have a cross-sectional structure similar to that of the connection member 215, and a connection member 215'. The guard ring 41 may also include bonding portions E11', E12', 21', and E21' that may have a cross-sectional structure similar to that of the bonding electrodes E11, E12, 21, and E21. The photoelectric conversion device 100 may also include a pad PAD disposed between the guard ring 41 and the pixel array region, and a pad opening 42 that exposes the pad PAD.

[0046] 12A, 12B, and 12C, a method for manufacturing the photoelectric conversion device 100 according to the first embodiment will be described. First, in STEP 1, grooves to be used as through-holes TH are formed in the second semiconductor layer SL2 (more precisely, in a second semiconductor substrate for forming the second semiconductor layer SL2), and insulators INS may be formed in the grooves. Also, in STEP 1, for example, a transistor may be formed. The through-holes TH and insulators INS may be formed after the sensor substrate 11 and the first circuit substrate 21 are bonded together, i.e., in STEP 6, which will be described later.

[0047] In STEP 2, a first film 218 and a second film 216 may be sequentially formed on the second semiconductor layer SL2. The first film 218 may be, for example, a silicon nitride film. The second film 216 may be, for example, a silicon oxide film.

[0048] In STEP 3, the second film 216 is etched using the first film 218 as an etching stopper film to form a second opening OP2, and a connecting member 215 is formed in the second opening OP2. The connecting member 215 may be made of, for example, tungsten, but may also be made of other materials such as aluminum or copper.

[0049] In STEP 4, a wiring structure including a wiring layer may be formed on the connection member 215. This may result in the formation of the first circuit board 21. In STEP 5, the sensor board 11 (first board) prepared in the step of preparing the sensor board 11 (first board), not shown, may be bonded to the first circuit board 21 (second board) formed in STEPs 1 to 4. At this time, the bonding electrode E11 and the bonding electrode E12 may be bonded.

[0050] In STEP 6, the second semiconductor substrate may be thinned as needed to form a second semiconductor layer SL2. In STEP 7, an insulating layer IL21 is formed. Furthermore, through-holes may be formed in the insulating layer IL21 and the second semiconductor layer SL2 so as to penetrate the insulator INS in the through-holes TH. The through-holes may be filled with a conductive material to form through-vias 219. This results in the formation of through-vias 219 that penetrate the second semiconductor layer SL2 and reach the connecting members 215. The through-vias 219 may be formed of, for example, tungsten, but may also be formed of other materials such as aluminum or copper. The through-holes for forming the through-vias 219 may be formed by etching the insulating layer IL21 and the second semiconductor layer SL2 using the connecting members 215 as an etching stop. When forming the photoelectric conversion device 100 schematically shown in FIG. 10 , the sensor substrate 11 and the first circuit substrate 21 may be bonded to each other after the through-vias 219 are formed in the first circuit substrate 21 (second substrate).

[0051] Thereafter, by joining the second circuit board 31 to the first circuit board 21, the photoelectric conversion device 100 having the structure schematically shown in FIG. 7 is obtained.

[0052] 13 schematically shows a cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device of the second modified example. Matters not mentioned in the second modified example may conform to those of the first embodiment or the first modified example, unless they are inconsistent. In the second modified example, the connection member 215 may include a conductive pattern 221 arranged to be in electrical contact with the through via 219, and a plug 222 that electrically connects the conductive pattern 221 and the wiring pattern 217. The conductive pattern 221 may be formed of, for example, aluminum or tungsten.

[0053] FIG. 14 is a schematic cross-sectional view showing the configuration of a photoelectric conversion device 100 according to a second modified example. FIG. 14 corresponds to a schematic cross-sectional view taken along line B-B' in FIG. 11A. The photoelectric conversion device 100 may include a guard ring 41 disposed between the pixel array region 12 and the edge EP. The guard ring 41 may include a through via 219, a through via 219' that may have a cross-sectional structure similar to that of the connection member 215, and a connection member 215'. The connection member 215' may include a conductive pattern 221' and a plug 222' that may have a cross-sectional structure similar to that of the conductive pattern 221 and the plug 222, respectively. The guard ring 41 may also include bonding portions E11', E12', 21', and E21' that may have a cross-sectional structure similar to that of the bonding electrodes E11, E12, 21, and E21. The photoelectric conversion device 100 may include a pad PAD disposed between the guard ring 41 and the pixel array region 12 and a pad opening 42 that exposes the pad PAD.

[0054] FIG. 15 schematically illustrates the cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device according to a third modification. Matters not mentioned in the third modification may be consistent with the first or second modification of the first embodiment, provided that they are not inconsistent. In the third modification, a second through via 219a penetrating the insulator INS disposed in the through hole TH is provided in parallel with the through via 219. Also, in the third modification, a conductive plug 222a (second connection member) disposed in the insulating structure INS (first insulating layer IL1) may be provided in parallel with the plug 222 (connection member) to electrically connect the second through via 219a and the wiring pattern 217. The conductive pattern 221 as part of the connection member may be shared by the through via 219 and the second through via 219a, or may be provided individually. From another perspective, the conductive pattern 221 as part of the connection member may be shared by the through via 219 and the second through via 219a, or may be provided individually. Such a configuration is advantageous for improving yield, etc.

[0055] 16A, 16B, and 16C, a method for manufacturing the photoelectric conversion device 100 of the second modified example shown in FIG. 13 will be described. First, in STEP 1, grooves to be used as through-holes TH are formed in the second semiconductor layer SL2 (more precisely, in a second semiconductor substrate for forming the second semiconductor layer SL2), and insulators INS are formed in the grooves. Also, in STEP 1, for example, a transistor may be formed. The through-holes TH and insulators INS may be formed after the sensor substrate 11 and the first circuit substrate 21 are bonded together, i.e., in STEP 6 described below.

[0056] In STEP 2, a first film 218 may be formed on the second semiconductor layer SL2, a conductive pattern 221 may be formed on the first film 218, and a second film 216 may be formed on the conductive pattern 221. The first film 218 may be, for example, a silicon nitride film. The conductive pattern 221 may be, for example, aluminum or tungsten. The second film 216 may be, for example, a silicon oxide film.

[0057] In STEP 3, the second film 216 is etched using the conductive pattern 221 as an etching stopper film to form a second opening OP2, and the connection member 215 may be formed in the second opening OP2. The connection member 215 may be formed of, for example, tungsten, but may also be formed of other materials such as aluminum or copper.

[0058] In STEP 4, a wiring structure including a wiring layer may be formed on the connection member 215. This may result in the formation of the first circuit board 21. In STEP 5, the sensor board 11 (first board) prepared in the step of preparing the sensor board 11 (first board), not shown, may be bonded to the first circuit board 21 (second board) formed in STEPs 1 to 4. At this time, the bonding electrode E11 and the bonding electrode E12 may be bonded.

[0059] In STEP 6, the second semiconductor substrate may be thinned as needed to form a second semiconductor layer SL2. In STEP 7, an insulating layer IL21 is formed, and a through-hole is then formed in the insulating layer IL21, the second semiconductor layer SL2, and the first film 218 so as to penetrate the insulator INS and the first film 218 in the through-hole TH. A through-via 219 may then be formed by filling the through-hole with a conductive material. This results in the formation of a through-via 219 that penetrates the second semiconductor layer SL2 and the first film 216 and reaches the conductive pattern 221. The through-via 219 may be formed of, for example, tungsten, but may also be formed of other materials such as aluminum or copper. The through-hole for forming the through-via 219 may be formed by etching the insulating layer IL21, the second semiconductor layer SL2, and the second film 218 using the conductive pattern 221 as an etching stop.

[0060] Hereinafter, application examples of the above-described photoelectric conversion device 100 will be described as second to eighth embodiments.

[0061] The photoelectric conversion system according to the second embodiment will be described with reference to Fig. 17. Fig. 17 is a block diagram showing a schematic configuration of the photoelectric conversion system according to the second embodiment.

[0062] The above-described photoelectric conversion device 100 can be applied to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, vehicle-mounted cameras, and observation satellites. Also included in the photoelectric conversion system is a camera module equipped with an optical system such as a lens and an imaging device. Figure 7 illustrates a block diagram of a digital still camera as an example of such a system.

[0063] 17 includes an imaging device 1004, which is an example of a photoelectric conversion device. The photoelectric conversion system 1000 also includes a lens 1002 that forms an optical image of a subject on the imaging device 1004, an aperture 1003 that adjusts the amount of light passing through the lens 1002, and a barrier 1001 that protects the lens 1002. The lens 1002 and the aperture 1003 form an optical system (optical device) that focuses light on the imaging device 1004. The imaging device 1004 is the photoelectric conversion device 100 (imaging device) described above, and converts the optical image formed by the lens 1002 into an electrical signal.

[0064] The photoelectric conversion system 1000 also has a signal processing unit 1007, which is an image generation unit that generates an image by processing an output signal output by the imaging device 1004. The signal processing unit 1007 functions as a processing device that performs various corrections and compressions as necessary and outputs image data. The signal processing unit 1007 may be formed on the same semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate separate from the imaging device 1004. Furthermore, the imaging device 1004 and the signal processing unit 1007 may be formed on the same semiconductor substrate.

[0065] The photoelectric conversion system 1000 further includes a memory unit 1010 for temporarily storing image data and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system 1000 also includes a recording medium 1012 such as a semiconductor memory for recording or reading out image data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading out data from the recording medium 1012. The recording medium control I / F unit 1011 and the recording medium 1012 can form part of a storage device. The recording medium 1012 may be built into the photoelectric conversion system 1000 or may be removable.

[0066] Furthermore, the photoelectric conversion system 1000 has an overall control / calculation unit 1009 that performs various calculations and controls the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the image capture device 1004 and the signal processing unit 1007. The overall control / calculation unit 1009 and the timing generation unit 1008 can form part of a control device for controlling the operation of the photoelectric conversion system 1000. Here, timing signals and the like may be input from outside, and the photoelectric conversion system 1000 only needs to have at least the image capture device 1004 and the signal processing unit 1007 that processes the output signal output from the image capture device 1004.

[0067] The imaging device 1004 outputs an imaging signal to a signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal. Although not shown in FIG. 17 , a display device such as a display for displaying the generated image may be provided in the photoelectric conversion system 1000. As described above, according to this embodiment, it is possible to realize a photoelectric conversion system 1000 that applies the photoelectric conversion device 100 (imaging device) of any of the above embodiments.

[0068] A photoelectric conversion system 1300 and a mobile object 1301 according to the third embodiment will be described with reference to Fig. 18A and Fig. 18B. Fig. 18A and Fig. 18B are diagrams showing the configurations of the photoelectric conversion system 1300 and the mobile object 1301 according to the third embodiment.

[0069] FIG. 18A illustrates an example of a photoelectric conversion system for an in-vehicle camera. The photoelectric conversion system 1300 includes an image capture device 1310. The image capture device 1310 is the photoelectric conversion device 100 (image capture device) described above. The photoelectric conversion system 1300 also includes an image processing unit 1312 that performs image processing on multiple pieces of image data acquired by the image capture device 1310. The photoelectric conversion system 1300 also includes a distance acquisition unit 1316 that calculates the distance to an object, and a collision determination unit 1318 that determines whether or not there is a possibility of a collision based on the calculated distance. Here, the distance acquisition unit 1316 may acquire distance information to the object using a time-of-flight (ToF) method, or may acquire distance information using parallax information, etc. In other words, the distance information is information related to parallax, defocus amount, distance to the object, etc. The collision determination unit 1318 may determine the possibility of a collision using any of these distance information. The distance acquisition unit 1316 may be realized by dedicated hardware or a software module. Alternatively, the distance acquisition unit 1316 may be realized by a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or a combination thereof.

[0070] The photoelectric conversion system 1300 is connected to a vehicle information acquisition device 1320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 1300 is also connected to an ECU 1330, which is a control device that outputs a control signal to generate a braking force for the vehicle based on the determination result of the collision determination unit 1318. The photoelectric conversion system 1300 is also connected to an alarm device 1340 that issues an alarm to the driver based on the determination result of the collision determination unit 1318. For example, if the determination result of the collision determination unit 1318 indicates a high collision possibility, the ECU 1330 controls the drive device (mechanical device) 1360 by applying the brakes, releasing the accelerator, suppressing engine output, or other vehicle control to avoid the collision and mitigate damage. The alarm device 1340 warns the user by sounding an alarm, displaying alarm information on a screen of a car navigation system, or vibrating a seat belt or steering wheel.

[0071] In this embodiment, the photoelectric conversion system 1300 captures an image of the periphery of a vehicle (mobile body 1301), for example, the front or rear. Fig. 18B shows the photoelectric conversion system when capturing an image of the area in front of the vehicle (image capture range 1350). The vehicle information acquisition device 1320 sends instructions to the photoelectric conversion system 1300 or the image capture device 1310. This configuration can further improve the accuracy of distance measurement.

[0072] While the above describes an example of control to prevent collisions with other vehicles, the photoelectric conversion system 1300 can also be applied to automatic driving control to follow other vehicles and automatic driving control to prevent vehicles from drifting out of their lanes. Furthermore, the photoelectric conversion system 1300 can be applied not only to vehicles such as automobiles, but also to moving bodies (mobile devices) such as ships, aircraft, and industrial robots. The moving body includes one or both of a driving force generating unit that generates a driving force primarily used to move the moving body and a rotating body primarily used to move the moving body. The driving force generating unit can be an engine, a motor, or the like. The rotating body can be a tire, a wheel, a ship's screw, an aircraft's propeller, or the like. In addition to moving bodies, the photoelectric conversion system 1300 can be applied to a wide range of devices that use object recognition, such as intelligent transport systems (ITS).

[0073] The photoelectric conversion system of the fourth embodiment will be described with reference to Fig. 19. Fig. 19 is a block diagram showing an example of the configuration of a range image sensor 1401 which is the photoelectric conversion system of this embodiment.

[0074] 19, the distance image sensor 1401 is configured to include an optical system 1407, a photoelectric conversion device 1408, an image processing circuit 1404, a monitor 1405, and a memory 1406. The distance image sensor 1401 can obtain a distance image according to the distance to the subject by receiving light (modulated light or pulsed light) that is projected toward the subject from a light source device 1409 and reflected from the surface of the subject.

[0075] The optical system 1407 is configured to have one or more lenses, and guides image light (incident light) from an object to the photoelectric conversion device 1408 , forming an image on the light receiving surface (sensor portion) of the photoelectric conversion device 1408 .

[0076] The photoelectric conversion device 1408 is the photoelectric conversion device 100 described above, and a distance signal indicating a distance determined from a light reception signal output from the photoelectric conversion device 1408 is supplied to the image processing circuit 1404 .

[0077] The image processing circuit 1404 performs image processing to construct a distance image based on the distance signal supplied from the photoelectric conversion device 1408. The distance image (image data) obtained by this image processing is then supplied to a monitor 1405 for display, or supplied to a memory 1406 for storage (recording).

[0078] In the range image sensor 1401 configured in this manner, by applying the above-described photoelectric conversion device 100, it is possible to obtain, for example, a more accurate range image as the pixel characteristics improve.

[0079] The photoelectric conversion system of the fifth embodiment will be described with reference to Fig. 20. Fig. 20 is a diagram showing an example of the schematic configuration of an endoscopic surgery system 1250, which is the photoelectric conversion system of this embodiment.

[0080] 20 shows a state in which an operator (doctor) 1231 is performing surgery on a patient 1232 on a patient bed 1233 using an endoscopic surgery system 1250. As shown in the figure, the endoscopic surgery system 1250 includes an endoscope 1200, a surgical tool 1210, and a cart 1234 on which various devices for endoscopic surgery are mounted.

[0081] The endoscope 1200 includes a lens barrel 1201, a region of which a predetermined length from the tip is inserted into a body cavity of a patient 1232, and a camera head 1202 connected to the base end of the lens barrel 1201. In the illustrated example, the endoscope 1200 is configured as a so-called rigid lens barrel having a rigid lens barrel 1201, but the endoscope 1200 may also be configured as a so-called flexible lens barrel having a flexible lens barrel.

[0082] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 1201. A light source device 1203 is connected to the endoscope 1200, and light generated by the light source device 1203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 1201, and is irradiated via the objective lens toward an observation target inside a body cavity of a patient 1232. The endoscope 1200 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0083] An optical system and a photoelectric conversion device are provided inside the camera head 1202, and light reflected from an observation target (observation light) is focused onto the photoelectric conversion device by the optical system. The observation light is photoelectrically converted by the photoelectric conversion device to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observation image. The photoelectric conversion device may be the photoelectric conversion device 100 (image capture device) described in each of the above-described embodiments. The image signal is transmitted as RAW data to a camera control unit (CCU) 1235.

[0084] The CCU 1235 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 1200 and the display device 1236. Furthermore, the CCU 1235 receives an image signal from the camera head 1202 and performs various types of image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0085] The display device 1236 , under the control of the CCU 1235 , displays an image based on the image signal that has been subjected to image processing by the CCU 1235 .

[0086] The light source device 1203 is configured from a light source such as an LED (Light Emitting Diode), and supplies the endoscope 1200 with irradiation light when photographing an operation site or the like.

[0087] The input device 1237 is an input interface for the endoscopic surgery system 1250. A user can input various information and instructions to the endoscopic surgery system 1250 via the input device 1237.

[0088] The treatment tool control device 1238 controls the driving of the energy treatment tool 1212 for cauterizing tissue, incising, sealing blood vessels, or the like.

[0089] The light source device 1203, which supplies illumination light to the endoscope 1200 when photographing the surgical site, can be configured from a white light source formed, for example, of an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 1203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor in the camera head 1202 in synchronization with the irradiation timing. This method allows color images to be obtained without providing a color filter to the image sensor.

[0090] Furthermore, the light source device 1203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 1202 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0091] The light source device 1203 may also be configured to provide light in a predetermined wavelength band corresponding to special light observation. Special light observation utilizes, for example, the wavelength dependence of light absorption in body tissue. Specifically, by irradiating light with a narrower band than the light (i.e., white light) used during normal observation, a specific tissue, such as a blood vessel on the surface of a mucous membrane, can be imaged with high contrast. Alternatively, special light observation may involve fluorescence observation, in which an image is obtained using fluorescence generated by irradiating excitation light. Fluorescence observation may involve irradiating excitation light onto a body tissue and observing the fluorescence from the body tissue, or irradiating the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent after locally injecting the body tissue with the reagent to obtain a fluorescent image. The light source device 1203 may be configured to provide narrow-band light and / or excitation light corresponding to such special light observation.

[0092] A photoelectric conversion system according to a sixth embodiment will be described with reference to FIGS. 21A and 21B. FIG. 21A illustrates glasses 1600 (smart glasses) that are the photoelectric conversion system of this embodiment. The glasses 1600 include a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device 100 (imaging device) described in each of the above embodiments. A display device including a light-emitting device such as an OLED or LED may be provided on the rear surface of the lens 1601. The photoelectric conversion device 1602 may be one or more. A combination of multiple types of photoelectric conversion devices may also be used. The arrangement position of the photoelectric conversion device 1602 is not limited to that shown in FIG. 21A.

[0093] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the photoelectric conversion device 1602 and the display device. The control device 1603 also controls the operations of the photoelectric conversion device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light onto the photoelectric conversion device 1602.

[0094] FIG. 21B illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device. A lens 1611 includes an optical system for projecting light emitted from the photoelectric conversion device and the display device, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operation of the photoelectric conversion device and the display device. The control device may include a gaze detection unit for detecting the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light emitter emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit with a light-receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. A reduction unit for reducing light from the infrared light emitter to the display unit in a planar view reduces degradation of image quality.

[0095] The gaze of the user relative to the displayed image is detected from an image of the eyeball captured using infrared light. Any known method can be used for gaze detection using an image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0096] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0097] The display device of this embodiment may have a photoelectric conversion device having a light receiving element, and may control the image displayed on the display device based on information on the user's line of sight from the photoelectric conversion device.

[0098] Specifically, the display device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0099] The display area may include a first display area and a second display area different from the first display area, and a high-priority area may be determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0100] Note that AI may be used to determine the first field of view area or the area with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the photoelectric conversion device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0101] When display control is performed based on visual recognition detection, the present invention is preferably applied to smart glasses that further include a photoelectric conversion device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0102] The seventh embodiment will be described with reference to Figures 22A and 22B. The above-described photoelectric conversion device and photoelectric conversion system may be applied to electronic devices such as so-called smartphones and tablets.

[0103] 22A and 22B are diagrams showing an example of an electronic device 1500 equipped with a photoelectric conversion device. Fig. 22A shows the front side of the electronic device 1500, and Fig. 22B shows the rear side of the electronic device 1500.

[0104] 22A , a display 1510 for displaying an image is disposed in the center of the surface of electronic device 1500. Then, along the upper edge of the surface of electronic device 1500, front cameras 1521 and 1522 using the above-described photoelectric conversion device 100, an IR light source 1530 that emits infrared light, and a visible light source 1540 that emits visible light are disposed.

[0105] Also, as shown in FIG. 22B, along the upper edge of the back surface of the electronic device 1500, rear cameras 1551 and 1552 using the above-mentioned photoelectric conversion device 100, an IR light source 1560 that emits infrared light, and a visible light source 1570 that emits visible light are arranged.

[0106] In the electronic device 1500 configured in this manner, by applying the above-described photoelectric conversion device 100, it is possible to capture, for example, higher quality images. Note that the photoelectric conversion device can also be applied to other electronic devices such as infrared sensors, distance measuring sensors using active infrared light sources, security cameras, and personal or biometric authentication cameras. This can improve the accuracy and performance of these electronic devices.

[0107] 23 is a block diagram of an X-ray CT device according to the eighth embodiment. The photoelectric conversion device 100 described above is applicable to the detector of the X-ray CT device. The X-ray CT device 30 according to this embodiment includes an X-ray generation unit 310, a wedge 316, a collimator 318, an X-ray detection unit 320, a top plate 330, a rotating frame 340, and a high-voltage generation device 350. The X-ray CT device 30 also includes a data acquisition system (DAS) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0108] The X-ray generating unit 310 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current are supplied to the vacuum tube of the X-ray generating unit 310 from a high voltage generator 350. X-rays are generated by irradiating the anode (target) with thermoelectrons from the cathode (filament).

[0109] The wedge 316 is a filter that adjusts the amount of X-rays irradiated from the X-ray generation unit 310. The wedge 316 attenuates the amount of X-rays so that the X-rays irradiated from the X-ray generation unit 310 to the subject have a predetermined distribution. The collimator 318 is made of a lead plate or the like that narrows the irradiation range of the X-rays that have passed through the wedge 316. The X-rays generated by the X-ray generation unit 310 are shaped into a cone beam via the collimator 318 and are irradiated onto the subject on the tabletop 330.

[0110] The X-ray detection unit 320 is configured using the above-described photoelectric conversion device 100. The X-ray detection unit 320 detects X-rays emitted from the X-ray generation unit 310 and passed through the subject, and outputs a signal corresponding to the X-ray dose to the DAS 351.

[0111] The rotating frame 340 is annular and rotatable. The X-ray generation unit 310 (wedge 316, collimator 318) and the X-ray detection unit 320 are arranged facing each other inside the rotating frame 340. The X-ray generation unit 310 and the X-ray detection unit 320 can rotate together with the rotating frame 340.

[0112] The high-voltage generator 350 includes a booster circuit and outputs a high voltage to the X-ray generator 310. The DAS 351 includes an amplifier circuit and an A / D converter circuit and outputs a signal from the X-ray detector 320 to the signal processor 352 as digital data.

[0113] The signal processing unit 352 includes a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory), and is capable of performing image processing on digital data. The display unit 353 includes a flat display device and is capable of displaying X-ray images. The control unit 354 includes a CPU, ROM, RAM, and the like, and controls the overall operation of the X-ray CT device 30.

[0114] The above-described embodiments can be modified as appropriate without departing from the technical spirit. The disclosure of this specification includes not only what is described in this specification, but also all matters that can be understood from this specification and the drawings attached hereto. The disclosure of this specification also includes the complement of the concepts described in this specification. In other words, if this specification states, for example, that "A is greater than B," it can be said that this specification discloses that "A is not greater than B" even if the statement that "A is not greater than B" is omitted. This is because the statement that "A is greater than B" is based on the premise that the case in which "A is not greater than B" is taken into consideration.

[0115] This application claims priority based on Japanese Patent Application No. 2023-204913, filed December 4, 2023, the entire contents of which are incorporated herein by reference.

[0116] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

[0117] 100: photoelectric conversion device (semiconductor device), SL1: first semiconductor layer, SL2: second semiconductor layer, IST: insulating structure, IL1: first insulating layer, IL2: second insulating layer, 215: connecting member, 217: wiring pattern, 219: through via

Claims

1. A semiconductor device having a stacked structure of multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, and an insulating structure that insulates the multiple semiconductor layers from one another, the insulating structure including a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer, and the second insulating layer between the second semiconductor layer and the third semiconductor layer, characterized in that the semiconductor device comprises: a conductive through via that penetrates the second semiconductor layer; a wiring pattern disposed in the first insulating layer; and a conductive connecting member disposed in the first insulating layer so as to electrically connect the through via and the wiring pattern.

2. The semiconductor device according to claim 1, wherein the connection member includes tungsten and the wiring pattern includes copper.

3. The semiconductor device according to claim 1 or 2, characterized in that the connection member includes a conductive pattern arranged so as to be in electrical contact with the through via, and a plug electrically connecting the conductive pattern and the wiring pattern.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that at a connection portion between the through via and the connection member, the width of the connection member is greater than the width of the through via.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that at a connection portion between the through via and the connection member, the width of the through via is greater than the width of the connection member.

6. The semiconductor device according to claim 4, wherein the width of the wiring pattern is greater than the width of the connection member at the connection portion between the connection member and the wiring pattern.

7. The semiconductor device according to claim 4, wherein the width of said connection member is larger than the width of said wiring pattern at the connection portion between said connection member and said wiring pattern.

8. A semiconductor device as claimed in any one of claims 1 to 7, characterized in that the insulating structure includes a first film having a first opening, and a second film arranged to overlap the first film and having a second opening, the through via includes a portion arranged within the first opening, and the connecting member is arranged within the second opening.

9. The semiconductor device according to any one of claims 1 to 8, characterized in that the through via is arranged so as to penetrate an insulator arranged in the through hole of the second semiconductor layer.

10. The semiconductor device according to claim 9, further comprising: a second through via penetrating the insulator; and a second conductive connection member disposed within the insulating structure so as to electrically connect the second through via and the wiring pattern.

11. The semiconductor device according to claim 9, further comprising a second through via penetrating the insulator, and the connection member is arranged so as to electrically connect the second through via and the wiring pattern.

12. The semiconductor device according to any one of claims 1 to 10, characterized in that the through via has a tapered shape in which the width decreases toward the connection member.

13. The semiconductor device according to any one of claims 1 to 10, characterized in that the connection member has a tapered shape in which the width decreases toward the through via.

14. The semiconductor device according to any one of claims 1 to 10, characterized in that the through via has a tapered shape whose width decreases toward the connection member, and the connection member has a tapered shape whose width decreases toward the through via.

15. The semiconductor device according to any one of claims 1 to 14, characterized in that the thickness of the second semiconductor layer is thinner than the thicknesses of the semiconductor layers other than the second semiconductor layer among the plurality of semiconductor layers.

16. The semiconductor device according to any one of claims 1 to 15, characterized in that the second insulating layer includes a metal bonding surface.

17. A semiconductor device having a stacked structure of multiple semiconductor layers including a first semiconductor layer and a second semiconductor layer and an insulating structure that insulates the multiple semiconductor layers from each other, comprising: a conductive through via that penetrates the second semiconductor layer; a wiring pattern disposed in the insulating structure; and a conductive connecting member disposed in the insulating structure so as to electrically connect the through via and the wiring pattern, wherein the through via has a tapered shape that decreases in width toward the connecting member, and the connecting member has a tapered shape that decreases in width toward the through via.

18. The semiconductor device according to any one of claims 1 to 17, characterized in that a photoelectric conversion element is disposed in the first semiconductor layer.

19. A method for manufacturing a semiconductor device, comprising the steps of: preparing a first substrate including a first semiconductor layer; preparing a second substrate including a second semiconductor layer and an insulating layer, the insulating layer having disposed therein a conductive connecting member and a wiring pattern electrically connected to the connecting member; forming a through via in the second semiconductor layer that passes through the second semiconductor layer to the connecting member; and bonding the first substrate and the insulating layer of the second substrate together before or after the formation of the through via.

20. A photoelectric conversion system comprising: a semiconductor device according to claim 18; and a signal processing unit for processing a signal output by the semiconductor device.

21. A moving object comprising the semiconductor device according to claim 18, further comprising a control unit for controlling the movement of the moving object using a signal output by the semiconductor device.

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