Display panel and display device

Abstract

The present application belongs to the technical field of display, and discloses a display panel and a display device. The display panel comprises: a substrate, first surface wiring, multiple electrode structures, side wiring, and a first retaining wall structure. The first retaining wall structure is at least located between any two adjacent electrode structures, and at least two sections have different areas among multiple sections of the first retaining wall structure parallel to a first surface. The sections of the first retaining wall structure having different areas are formed by laser etching, thus at least part of a conductive material which accumulates on the first retaining wall structure when the side wiring is formed can be removed by means of laser etching, so as to avoid adjacent electrode structure short circuiting caused by said part of the accumulated conductive material, and display panel yield can be improved.

Description

Display panel and display device Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] A display panel is a device with display function.

[0003] A display panel includes a substrate, a first surface trace disposed on a first surface of the substrate, side traces disposed on side surfaces of the substrate, an electrode structure, and a retaining wall structure. One end of the side trace is electrically connected to the electrode structure, and the other end of the side trace extends sequentially through the first surface and the side surface to the second surface. The retaining wall structure is located between two adjacent electrode structures on the first surface, thereby preventing conductive material of the side trace from entering the display area.

[0004] However, the conductive material forming the side wires may accumulate at the edge of the retaining wall structure close to the side surface, thereby causing a short circuit between adjacent electrode structures, thereby resulting in a low yield of the display panel.

[0005] Summary of the Invention

[0006] The embodiments of the present application provide a display panel and a display device, and the technical solutions are as follows:

[0007] According to a first aspect of the present application, a display panel is provided, comprising:

[0008] a substrate having a first surface and a second surface opposite to each other, and a plurality of side surfaces connecting the first surface and the second surface, wherein the first surface includes a display area and a peripheral area surrounding the display area;

[0009] a first surface wiring located in a display area of ​​the first surface, an electrode structure located in a peripheral area of ​​the first surface, and a plurality of side wirings located on at least one side surface of the plurality of side surfaces;

[0010] One end of each of the side traces is electrically connected to the electrode structure, and the other end extends sequentially through the first surface and the at least one side surface to the second surface, and the electrode structure is also electrically connected to the first surface trace;

[0011] There are multiple electrode structures, which are arranged at intervals along a first direction, and the first direction is a direction parallel to at least one side surface of the multiple side surfaces;

[0012] a first retaining wall structure, located at least between any two adjacent electrode structures, wherein among a plurality of cross sections of the first retaining wall structure parallel to the first surface, at least two cross sections have different areas;

[0013] The cross-section with the smallest area among the multiple cross-sections is the first cross-section, the orthographic projection of the first cross-section on the first surface has a first profile, the orthographic projection of the first surface trace on the first surface has a second profile, the minimum distance d1 between the first profile and the second profile in the second direction is not less than 10 microns, and the second direction is a direction perpendicular to the first direction.

[0014] Optionally, in the second direction, the first contour and the second contour satisfy 1 / 2<d2 / d3<3, d2 is the minimum distance between the first position of the first contour and the second contour, d3 is the minimum distance between the edge of the electrode structure away from the side routing and the second contour, and the first position is the position on the first contour farthest from the second contour.

[0015] Optionally, in the second direction, the first profile and the second profile satisfy 1<d2 / d3<3.

[0016] Optionally, the first retaining wall structure includes a plurality of stacked film layers, and the thickness of the plurality of stacked film layers in a direction perpendicular to the substrate ranges from 3 microns to 6 microns.

[0017] Optionally, it is characterized in that the first retaining wall structure includes a protective layer and at least one film layer, the protective layer is located on the substrate on which the first surface routing is formed, and the edge of the protective layer close to the side routing is located on the side of the first surface routing close to the side routing, and the at least one film layer is stacked on the protective layer.

[0018] Optionally, in the second direction, the position where the protective layer is closest to the side surface is the second position, and the position where the at least one film layer is closest to the side surface is the third position;

[0019] In the second direction, the second position and the third position are flush with each other, or, in the second direction, the third position is located on a side of the second position close to the side surface.

[0020] Optionally, in the second direction, when the third position is located on a side of the second position close to the side surface, the third position and the second position have a specified distance in the second direction, and the specified distance ranges from 20 micrometers to 100 micrometers.

[0021] Optionally, the first retaining wall structure includes a target film layer, and a thickness of the target film layer in a direction perpendicular to the substrate ranges from 3 microns to 6 microns.

[0022] Optionally, in the second direction, a minimum distance between the first position of the first contour and the second contour ranges from 50 micrometers to 150 micrometers, and the first position is a position on the first contour that is farthest from the second contour.

[0023] Optionally, the display panel further includes a second retaining wall structure, which is located on a side of the first retaining wall structure away from the side wiring, and covers an edge of the first surface wiring close to the side wiring.

[0024] Optionally, the first retaining wall structure is connected to the second retaining wall structure.

[0025] Optionally, there is a distance between the first retaining wall structure and the second retaining wall structure.

[0026] Optionally, the distance between the first retaining wall structure and the second retaining wall structure ranges from 10 microns to 110 microns.

[0027] On the other hand, a display device is provided, comprising a display structure and any one of the above-mentioned display panels, wherein the display structure is located on the display panel.

[0028] The beneficial effects of the technical solutions provided in the embodiments of the present application include at least:

[0029] A display panel and a display device are provided that include a first retaining wall structure. In the display panel, the first retaining wall structure is located at least between any two adjacent electrode structures, and among multiple cross-sections of the first retaining wall structure parallel to the first surface, at least two cross-sections have different areas. The cross-sections of the first retaining wall structure with different areas are formed by laser etching. This allows the laser etching to remove at least a portion of the conductive material accumulated on the first retaining wall structure during the formation of the side wiring, thereby preventing this accumulated conductive material from causing a short circuit between adjacent electrode structures, thereby improving the yield of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0031] FIG1 is a schematic diagram of a top view of a display panel provided in an embodiment of the present application;

[0032] FIG2 is an enlarged schematic diagram of a partial structure of the display panel provided in FIG1 ;

[0033] FIG3 is an enlarged schematic diagram of another partial structure of the display panel provided in FIG1 ;

[0034] FIG4 is a schematic cross-sectional view of the display panel provided in FIG1 ;

[0035] FIG5 is a schematic top view of a partial structure of another display panel provided in an embodiment of the present application;

[0036] FIG6 is a schematic top view of a partial structure of another display panel provided in an embodiment of the present application;

[0037] FIG7 is a schematic cross-sectional view of the display panel provided in FIG2 ;

[0038] FIG8 is a schematic top view of a partial structure of another display panel provided by the present application;

[0039] FIG9 is another schematic cross-sectional view of the display panel provided in FIG2 ;

[0040] FIG10 is another schematic cross-sectional view of the display panel provided in FIG2 ;

[0041] FIG11 is a schematic top view of another display panel provided in an embodiment of the present application;

[0042] FIG12 is a schematic cross-sectional view of the display panel provided in FIG11 ;

[0043] FIG13 is a schematic cross-sectional view of a partial structure of another display panel provided in an embodiment of the present application;

[0044] FIG14 is a schematic top view of a partial structure of another display panel provided in an embodiment of the present application;

[0045] FIG15 is a schematic cross-sectional view of the display panel provided in FIG14 ;

[0046] FIG16 is a schematic top view of a partial structure of another display panel provided in an embodiment of the present application;

[0047] FIG17 is a schematic cross-sectional view of a partial structure of another display panel provided in an embodiment of the present application;

[0048] FIG18 is a schematic cross-sectional view of a partial structure of another display panel provided in an embodiment of the present application.

[0049] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0050] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0051] The present application provides a display panel. Referring to FIG. 1 and FIG. 2 , FIG. 1 is a schematic diagram of a top view of a display panel provided in the present application. FIG. 2 is an enlarged schematic diagram of area A3 of the display panel provided in FIG. 1 . The display panel 10 includes:

[0052] The substrate 11 has a first surface A and a second surface B opposite to each other, and a plurality of side surfaces C connecting the first surface A and the second surface B. The first surface A includes a display area A1 and a peripheral area A2 surrounding the display area A1.

[0053] The first surface traces 12 are located in the display area A1 of the first surface A, the electrode structure 13 is located in the peripheral area A2 of the first surface 12, and the plurality of side traces 14 are located on at least one side surface C1 of the plurality of side surfaces C.

[0054] In addition, please refer to Figures 3 and 4. Figure 3 is an enlarged schematic diagram of the A4 area in the display panel provided in Figure 1 (for clarity, Figure 3 only shows the first surface trace 12, and the display area A1 also includes other film structures, which is not limited by the present disclosure). Figure 4 is a schematic diagram of a cross-sectional structure of the display panel provided in Figure 1 (Figure 4 may be a schematic diagram of the cross-sectional structure of the display panel provided in Figure 1 at G1-G1). One end 141 of each side trace 14 is electrically connected to the electrode structure 13, and the other end 142 extends sequentially through the first surface A and at least one side surface C1 to the second surface B, and the electrode structure 13 is also electrically connected to the first surface trace 12. That is, the side trace 14 includes a portion located on the first surface A, a portion located on at least one side surface C1, and a portion located on the second surface B.

[0055] There are multiple electrode structures 13, which are arranged at intervals along a first direction X, which is a direction parallel to at least one side surface C1 among the multiple side surfaces C. A first retaining wall structure 15 is located at least between any two adjacent electrode structures 13. Among the multiple cross-sections of the first retaining wall structure 15 parallel to the first surface A, at least two cross-sections have different areas. The cross-sections of the first retaining wall structure with different areas are formed by laser etching. Before the laser etching, the areas of the multiple cross-sections of the first retaining wall structure 15 parallel to the first surface A are substantially equal.

[0056] The cross-section with the smallest area among the multiple cross-sections is the first cross-section. The orthographic projection of the first cross-section on the first surface A has a first profile L1. The orthographic projection of the first surface trace 12 on the first surface A has a second profile L2. The minimum distance d1 between the first profile L1 and the second profile L2 in the second direction Y is not less than 10 microns. The second direction Y is a direction perpendicular to the first direction X. In this way, a certain distance can be ensured between the first surface trace 12 and the first retaining wall structure 15, thereby avoiding damage to the first surface trace 12 when the first retaining wall structure 15 is laser-etched.

[0057] Please refer to Figure 2, the multiple cross-sections also include a second cross-section and a third cross-section. The orthographic projection of the second cross-section on the first surface A has a profile L1', and the orthographic projection of the third cross-section on the first surface A has a profile L1". It can be seen that the area of ​​the third cross-section is greater than the area of ​​the second cross-section and greater than the area of ​​the first cross-section.

[0058] It should be noted that FIG1 shows the side wiring 14 being located on the side surface C1. In the embodiment of the present application, the side wiring 14 may also be located on one or more other side surfaces. Correspondingly, the first retaining wall structure 15 may also be located on the peripheral area A2 near other side surfaces.

[0059] In summary, embodiments of the present application provide a display panel and display device including a first retaining wall structure. In this display panel, the first retaining wall structure is located at least between any two adjacent electrode structures, and among multiple cross-sections of the first retaining wall structure parallel to the first surface, at least two cross-sections have different areas. The cross-sections of the first retaining wall structure with different areas are formed by laser etching. This allows for the removal of at least a portion of the conductive material accumulated on the first retaining wall structure during the formation of the side wiring, thereby preventing this accumulated conductive material from causing a short circuit in adjacent electrode structures, thereby improving the yield of the display panel.

[0060] The display panel provided in the embodiment of the present application may include a mini light emitting diode (mini LED) display panel and a micro light emitting diode (micro LED) display panel. The embodiment of the present application may splice small-sized mini LED display panels or micro LED display panels to achieve an extra-large display panel. Exemplarily, the display panel provided in the embodiment of the present application may include side routing, which may bind and connect the light-emitting elements on the first surface to the circuit board on the second surface, so that there is no need to set a circuit board in the peripheral area, thereby achieving the effect of reducing the peripheral area. When this structure is applied to a display device composed of multiple display panels, the splicing seam between two adjacent display panels can also be reduced to improve the display effect. Among them, the splicing seam may refer to an area between the display areas of two adjacent display panels that cannot be displayed.

[0061] In an exemplary embodiment, please refer to Figures 1 and 4, wherein the substrate 11 can be used to support the film layer or structure in the display panel 10, and the material of the substrate 11 can include any one of glass, quartz, plastic, polymethyl methacrylate (PMMA), etc. The first surface trace 12 located in the display area A1 is electrically connected to the electrical component, and one end of the first surface trace 12 close to the peripheral area A2 is electrically connected to the electrode structure 13. The electrode structure 13 can be electrically connected to the first surface trace 12 and the side trace 14 respectively. One end 141 of the side trace 14 is electrically connected to the electrode structure 23, and the other end 142 of the side trace 14 can be electrically connected to the control component located on the second surface B. Exemplarily, the electrical component may include a light-emitting element, and the control component may include a circuit board, so that the side trace 14 can transmit the electrical signal provided by the control component located on the second surface B to the element or structure on the first surface A.

[0062] In an exemplary embodiment, the side traces 14 may be prepared by the following process:

[0063] 1) A cover plate is used to shield the display area A1 of the first surface A to protect the display area A1 where the side traces 14 are not required to be formed. The cover plate may be a flat plate structure made of a rigid material.

[0064] 2) A conductive material layer, such as a metal layer, is formed on the peripheral area A2 of the first surface A, the side surface C of the substrate 11, and the second surface B of the substrate 11. The process of forming the conductive material layer may include sputtering.

[0065] 3) Etching the conductive material layer to form side traces 14. The conductive material layer can be laser-etched using an ultraviolet (UV) ultrashort pulse laser. The laser etching includes etching the conductive material layer on the first surface A along a path L_a, etching the conductive material layer on the side surface C along a path L_c, and etching the conductive material layer on the second surface B along a path L_b.

[0066] The first retaining wall structure 15 is located between at least two adjacent electrode structures 13, and is formed before the side traces 14. Prior to forming the side traces 14, the shapes of the multiple cross-sections of the first retaining wall structure 15 parallel to the first surface can be approximately equal rectangles. When forming the conductive material layer of the side traces 14, the boundary of the first retaining wall structure 15 near the side surface C1 can serve as an alignment mark for setting a baffle, preventing the conductive material layer from forming in the display area A1. Furthermore, as can be understood from Figures 4 and 5, during the laser etching process to form the side traces 14, an etched path exists between two adjacent side traces 14. Taking the portion of side trace 14 located on first surface A as an example, a sub-etching path K1 is defined between two adjacent side traces 14. Sub-etching path K1 includes a portion (l_a) formed by the laser etching the conductive material layer on first surface A along path L_a, where the length of l_a is greater than or equal to the dimension of side trace 14 in second direction Y; and a portion (l_c-a) formed by the laser irradiating first surface A due to process precision and other factors when etching the conductive material layer located on side surface C along path L_c. Both the laser light traveling along path L_a and the laser light traveling along path L_c may interfere with first retaining wall structure 15, thereby altering the morphology of first retaining wall structure 15, resulting in the structure shown in FIG. 2 at the end of first retaining wall structure 15 near side surface C1. Thus, sub-etching path K1 effectively prevents short circuits between adjacent electrode structures 13. The portion of l_a that overlaps with the first retaining wall structure 15 may have a dimension d11 in the second direction Y ranging from 0 μm to 50 μm, and d11 is 15 μm, for example. The portion of l_c-a that overlaps with the first retaining wall structure 15 may have a dimension d12 in the second direction Y ranging from 10 μm to 50 μm, and d12 is 15 μm, for example.

[0067] The shape of the end of the sub-etching track K1 away from the side surface can be a curved surface. The dimension d10 of the portion where the sub-etching track K1 overlaps with the first retaining wall structure 15 in the second direction Y can range from 10 microns to 50 microns. Exemplarily, d10 is 30 microns. In the first direction X, the first retaining wall structure 15 can include two opposing edges L6 and an edge L7. The minimum distance between the sub-etching track K1 and the edge L6 is d13, and the minimum distance between the sub-etching track K1 and the edge L7 is d14. Both d13 and d14 are greater than 15 microns. This can prevent the laser from damaging other film layers outside the first retaining wall structure 15 due to misalignment when d13 and d14 are too small. Exemplarily, d13 and d14 can be the same, that is, the sub-etching track K1 is located in the center of the first retaining wall structure 15 in the first direction X.

[0068] Figure 6 is a schematic top view of a partial structure in another display panel provided in an embodiment of the present application. If part of the conductive material climbs to the surface of the first retaining wall structure 15 due to preparation tolerances and other reasons when forming the conductive material layer, when the length of the sub-etching path K1 along the second direction Y is greater than the maximum length of the conductive material layer along the second direction Y, it can be ensured that the conductive material layer for forming the side wiring 14 is disconnected to avoid a short circuit between the two.

[0069] The first retaining wall structure in the display panel provided in the embodiment of the present application has at least two sections with different areas among the multiple sections parallel to the first surface. Please refer to Figures 2 and 7. Figure 7 is a schematic diagram of a cross-sectional structure of the display panel provided in Figure 2 (Figure 7 may be a schematic diagram of the cross-sectional structure of the display panel provided in Figure 2 at G5-G5, where G5-G5 is the location of laser etching). Since the laser extends to the first retaining wall structure 15 and forms an etching path, the etching path causes the first retaining wall structure 15 to have at least two sections with different areas among the multiple sections parallel to the first surface. The cross-sectional structure of the first retaining wall structure 15 can present an irregular stepped structure. In an exemplary embodiment, the first retaining wall structure 15 can include multiple stacked film layers, and the multiple stacked film layers can be made of different materials. Different materials themselves have different laser absorption rates. Therefore, among the multiple sections parallel to the first surface, the first retaining wall structure 15 has at least two sections with different areas. On the other hand, since the closer the position on the first retaining wall structure 15 is to the substrate 11, the farther the distance from the laser is, the lower the laser energy density received by the position on the first retaining wall structure 15 that is closer to the substrate 11 is. Therefore, in the multiple cross-sections of the first retaining wall structure parallel to the first surface, the cross-sectional area closer to the substrate 11 is relatively smaller.

[0070] In an exemplary embodiment, please refer to FIG8 , which is a schematic top view of a portion of the structure of another display panel provided by the present application. In the second direction Y, d2 is the minimum distance between the first position E1 of the first contour L1 and the second contour L2, and d3 is the minimum distance between the edge L3 of the electrode structure 13 away from the side trace 14 and the second contour L2. In the second direction Y, the first position E1 is the position on the first contour L1 that is farthest from the second contour L2. For example, the first position E1 may be the position on the edge of the first retaining wall structure 15 close to the side surface C1 that is farthest from the second contour L2 in the second direction Y before the side trace 14 is formed.

[0071] The relative position between the first position E1 of the first contour L1 and the edge L3 of the electrode structure 13 away from the side traces 14 can be determined by the magnitude relationship between d2 and d3. For example, FIG8 illustrates the case where d2>d3. In this case, the first position E1 of the first contour L1 is located on the side of the electrode structure 13 away from the side traces 14, closer to the side surface. That is, the first position E1 of the first contour L1 is closer to the side surface, thereby shortening the laser etching distance in the second direction Y. In the second direction Y, the minimum distance d2 between the first position E1 of the first contour L1 and the second contour L2 can range from 50 microns to 150 microns. A d2 greater than or equal to 50 microns prevents laser etching from damaging the first surface traces 12, while a d2 less than or equal to 150 microns prevents the peripheral area occupied by the first retaining wall structure 15 from being excessive. When the first retaining wall structure 15 is used in a display device composed of multiple display panels, it can prevent the first retaining wall structure 15 from causing an excessively large seam between the multiple display panels, thereby improving the display quality. In the second direction Y, the minimum distance d3 between the edge L3 of the electrode structure 13 away from the side trace 14 and the second contour L2 can be in the range of 50 microns to 100 microns. In addition, the overlap dimension f between the side trace 14 and the electrode structure 13 is at least 40 microns, which ensures the stability of the electrical connection between the side trace 14 and the electrode structure 13. In addition, there is a case where d2 < d3. In this case, the first position E1 of the first contour L1 is located on the side of the edge L3 of the electrode structure 13 away from the side trace 14, which is away from the side surface. That is, the edge L3 of the electrode structure 13 away from the side trace 14 is closer to the side surface.

[0072] Optionally, in the second direction Y, the first contour L1 and the second contour L2 can satisfy 1 / 2<d2 / d3<3, so as to avoid the first position E1 of the first contour L1 being too close to the side trace 14 or the second edge L2, thereby avoiding the conductive material from being sputtered onto the surface of the first retaining wall structure 15 away from the substrate when the first retaining wall structure 15 is too close to the side trace 14, so as to ensure that the first retaining wall structure 15 can effectively block the boundary of the conductive material, which is also the boundary of the side trace 14 away from the side surface C1, and can also avoid the risk of water vapor intrusion into the first surface trace 12 when the first contour L1 is too close to the second edge L2.

[0073] Based on the above range, in the second direction Y, the first contour L1 and the second contour L2 can satisfy 1<d2 / d3<3. This not only shortens the distance of laser etching in the second direction Y, but also avoids the increased risk of water vapor intrusion into the first surface trace 12 when the first contour L1 is too close to the second edge L2.

[0074] The following describes the membrane layers that may be included in the first retaining wall structure:

[0075] The first retaining wall structure is a multi-layer structure or a single-layer structure. In an exemplary embodiment, the first retaining wall structure may include multiple stacked film layers, and the thickness of the multiple stacked film layers in the direction perpendicular to the substrate ranges from 3 microns to 6 microns. This thickness range ensures that the first retaining wall structure can block the conductive material of the side traces without causing the thickness of the first retaining wall structure to be too large and affect the total thickness of the display panel. Please refer to Figures 2 and 9. Figure 9 is another schematic cross-sectional structure diagram of the display panel provided in Figure 2 (Figure 9 may be a schematic cross-sectional structure diagram of the display panel provided in Figure 2 at G2-G2, where the first retaining wall structure 15 at G2-G2 is not etched). The first retaining wall structure 15 may include a protective layer 151 stacked in sequence in a direction away from the substrate 141, and at least one film layer 152. The protective layer 151 is located on the substrate 11 on which the first surface trace 12 is formed, and the edge of the protective layer 151 near the side surface C1 is located on the side of the first surface trace 12 near the side surface C1. At least one film layer 152 is stacked on the protective layer 151.

[0076] At least one film layer 152 is stacked on the protective layer 151. The at least one film layer 152 can be used to increase the thickness of the first retaining wall structure 15 in a direction perpendicular to the substrate 11, and the total thickness of the protective layer 151 and the at least one film layer 152 in a direction perpendicular to the substrate ranges from 3 microns to 6 microns. This thickness range allows the conductive material to be located at the edge of the first retaining wall structure 15 close to the side surface, preventing the conductive material from sputtering to the side of the first retaining wall structure 15 away from the substrate 11, so that the first retaining wall structure 15 can effectively block the conductive material of the side wiring 14 from entering the display area.

[0077] In addition, the display panel 10 may further include a first buffer layer 16 between the substrate 12 and the first surface wiring 12. The first buffer layer 16 may increase the bonding force between the first surface wiring 12 and the substrate 12, thereby preventing the first surface wiring 12 from peeling off. The material of the first buffer layer 16 may include silicon nitride (SiN x ), and / or silicon oxide (SiO x ).

[0078] Optionally, in the second direction Y, the position at which the protective layer 151 is closest to the side surface C1 is the second position E2. For example, the second position E2 may be the position of the edge of the protective layer 151 near the side surface C1 that is closest to the side surface C1 in the second direction Y before the side traces 14 are formed. In the second direction Y, the position at which the at least one film layer 152 is closest to the side surface C1 is the third position E3. For example, the third position E3 may be the position of the edge of the at least one film layer 152 near the side surface C1 that is closest to the side surface C1 in the second direction Y before the side traces 14 are formed. The relative positions of the second position E2 and the third position E3 may vary in various ways.

[0079] For example, as shown in FIG9 , the third position E3 can be located on the side of the second position E2 close to the side surface. In this case, at least one film layer 152 is stacked to cover the protective layer 151, which helps prevent the protective layer 151 from peeling off. The third position E3 and the second position E2 have a specified distance d4 in the second direction Y, and the specified distance d4 can range from 20 microns to 100 microns. Referring to FIG8 , since the minimum distance d2 between the first position E1 of the first contour L1 and the second contour L2 can range from 50 microns to 150 microns, by making the specified distance d4 greater than 20 microns, it can be ensured that the distance d5 between the second position E2 of the protective layer 151 and the edge of the first surface trace 12 close to the side surface C1 is at least 30 microns, thereby preventing water and oxygen from corroding the first surface trace 12. By ensuring that the specified distance d4 is less than 100 microns, the first retaining wall structure 15 is prevented from being too close to the side surface, thereby preventing the conductive material of the side trace 14 from being sputtered onto the side of the first retaining wall structure 15 away from the substrate 11, thereby ensuring that the first retaining wall structure 15 can effectively block the conductive material. Furthermore, based on the aforementioned ranges of d2 and d4, the distance d5 between the second position E2 of the protective layer 151 and the edge of the first surface trace 12 near the side surface C1 can be in the range of 30 microns to 50 microns.

[0080] There is another situation for the relative positions of the second position E2 and the third position E3, as shown in Figure 10, which is another cross-sectional structural schematic diagram of the display panel provided in Figure 2 (Figure 10 may be a cross-sectional structural schematic diagram of the display panel provided in Figure 2 at G2-G2), and the second position E2 and the third position E3 may also be flush, that is, d4 may be equal to 0.

[0081] The display area of ​​the display panel provided in the embodiments of the present application may include multiple stacked film layers, which may form various structures in the display panel to achieve the display function of the display panel. When the first retaining wall structure includes multiple stacked film layers, the multiple stacked film layers in the first retaining wall structure may be co-layered with some film layers in the display area to reduce the number of patterning processes.

[0082] In an exemplary embodiment, please refer to Figures 11 and 12. Figure 11 is a schematic diagram of the top view of another display panel provided in an embodiment of the present application, and Figure 12 is a schematic diagram of a cross-sectional structure of the display panel provided in Figure 11 (Figure 12 may be a schematic diagram of the cross-sectional structure of the display panel provided in Figure 11 at G3-G3). The first surface wiring 12 may include various wirings located in the display area A1 of the first surface A. For example, the display area A1 of the display panel 10 may include a first wiring layer M1 and a second wiring layer M2 stacked in a direction away from the substrate 11. The first surface wiring 12 includes a conductive pattern located in the first wiring layer M1 and / or the second wiring layer M2. In the display area A1, the display panel 10 also includes a second buffer layer 171a, a first organic layer 171b, a first passivation layer 171c, a third buffer layer 172a, a second organic layer 172b, and a second passivation layer 172c. The second buffer layer 171a, the first organic layer 171b, and the first passivation layer 171c are located between the first wiring layer M1 and the second wiring layer M2, and are stacked sequentially in a direction away from the substrate 11. The third buffer layer 172a, the second organic layer 172b, and the second passivation layer 172c are located on a side of the second wiring layer M2 away from the first wiring layer M1, and are stacked sequentially in a direction away from the substrate 11. The first retaining wall structure 15 is located at least between any two adjacent electrode structures 13. Among the multiple cross-sections of the first retaining wall structure 15 parallel to the first surface A, at least two cross-sections have different areas.

[0083] Among them, the second buffer layer 171a and the third buffer layer 172a buffer layer can increase the bonding force between the film layers and can also isolate the first surface wiring 12 from water and oxygen corrosion. The first passivation layer 171c and the second passivation layer 172c can play an insulating role and can protect the first surface wiring from water and oxygen corrosion. Exemplarily, the materials of the second buffer layer 171a, the third buffer layer 172a, the first passivation layer 171c and the second passivation layer 172c can all include silicon nitride and / or silicon oxide. The manufacturing process of the second buffer layer 171a, the third buffer layer 172a, the first passivation layer 171c and the second passivation layer 172c can include plasma enhanced chemical vapor deposition (PECVD). The first organic layer 171b and the second organic layer 172b can play a planarizing role, thereby improving the flatness of the film surface. Exemplarily, the materials of the first organic layer 171b and the second organic layer 172b can all include resin materials, such as polyimide or polyacrylic acid.

[0084] The first passivation layer 171c is located on the side of the electrode structure 13 close to the substrate 11. The first passivation layer 171c may include a transfer hole K3, through which the electrode structure 13 can be transferred to the first surface trace 12. The second passivation layer 172c is located on the side of the electrode structure 13 away from the substrate 11. The second passivation layer 172c may include a through hole K4, through which the electrode structure 13 can be electrically connected to the side trace 14. The conductive structure S3 is located in the through hole K4 and covers the electrode structure 13. The conductive structure S3 is used to protect the exposed surface area of ​​the electrode structure 13 to prevent water vapor in the air from corroding the electrode structure 13. Exemplarily, the material of the conductive structure S3 may include nickel and / or gold. In addition, the first routing layer M1 may include a first positive signal line Hm1, a second positive signal line Hm2, a reference signal line Vm, a data signal line Dm, and a scan signal adapter line Cn. The second routing layer M2 may include multiple scan signal lines Sn, each of which may be electrically connected to a scan signal adapter line Cn. Furthermore, the driving element L02 may be electrically connected to the cathode of the light-emitting element L01 in each sub-pixel it drives, at least one data signal line Dm among the multiple data lines, at least one scan signal line Sn among the multiple scan signal lines, and at least one reference signal line Vm among the multiple reference signal lines. The reference signal line Vm may provide a negative signal to the driving element L02 to form a current path between the driving element L02 and the light-emitting element L01. The driving element L02 may be configured to, under the control of the scan signal line Sn, write the signal of the data signal line Dm into sub-pixels of different colors in a time-sharing manner. In addition, the pins of the light-emitting element L01 and the pins of the driving element L02 can be electrically connected to corresponding connection pads via a welding material S1 (e.g., solder, tin-silver-copper alloy, or tin-copper alloy), and the connection pads can further include a protective layer S2. The pins of the light-emitting element L01 can be electrically connected to the connection pads via vias penetrating the second buffer layer 171a, the first organic layer 171b, and the first passivation layer 171c, and the pins of the driving element L02 can be connected to the connection pads via vias penetrating the third buffer layer 172a, the second organic layer 172b, and the second passivation layer 172c, thereby enabling the light-emitting element L01 to emit light under the control of the signal transmitted by the signal line and the driving element L02.

[0085] In an exemplary embodiment, the multiple stacked film layers in the first retaining wall structure can be the same layer structure as some insulating film layers in the display area to achieve the effect of reducing the composition process. For example, please refer to Figures 11, 12 and 13. Figure 13 is a schematic cross-sectional structure diagram of a partial structure in another display panel provided in an embodiment of the present application. The first retaining wall structure 15 includes a protective layer 151, a first film layer 1521, a second film layer 1522, a third film layer 1523, a fourth film layer 1524 and a fifth film layer 1525, which are stacked in sequence in a direction away from the substrate 11. The protective layer 151 is co-layered with the second buffer layer 171a, the first film layer 1521 is co-layered with the first organic layer 171b, the second film layer 1522 is co-layered with the first passivation layer 171c, the third film layer 1523 is co-layered with the third buffer layer 172a, the fourth film layer 1524 is co-layered with the second organic layer 172b, and the fifth film layer 1525 is co-layered with the second passivation layer 172c. By forming the first retaining wall structure 15 co-layered with some of the film layers in the display area A1, not only can the conductive material of the side wiring be blocked, but the process can also be simplified and costs can be saved. In addition, Figure 13 shows a first retaining wall structure 15 including six stacked film layers. For display panels with different driving mode designs, the number and types of film layers included in the first retaining wall structure 15 may be different. For example, the first retaining wall structure 15 may also include three film layers, four film layers, five film layers, or seven film layers. The embodiments of the present application are not limited to this.

[0086] In the first retaining wall structure 15, the second film layer 1522 can cover the edge of the first film layer 1521 close to the side surface, and the fifth film layer 1525 can cover the edge of the fourth film layer 1524 close to the side surface, thereby preventing the edges of the multiple film layers close to the side surface in the first retaining wall structure 15 from peeling off. In addition, there are many situations in which the relative positions of the edges close to the side surface of the multiple film layers in the first retaining wall structure 15 exist. For example, in the first retaining wall structure 15, the edge of the first film layer 1521 close to the side surface can be located on the side of the edge of the protective layer 151 close to the side surface away from the edge of the substrate, or the edge of the second film layer 1522 close to the side surface can be located on the side of the edge of the protective layer 151 close to the side surface away from the edge of the substrate, or the edge of the third film layer 1523 close to the side surface can be located on the side of the edge of the fifth film layer 1525 close to the side surface away from the edge of the substrate. The embodiments of the present application do not impose any restrictions on this.

[0087] The above is the case where the first retaining wall structure is a multi-layer structure. The first retaining wall structure can also be a single-layer structure. The single-layer first retaining wall structure can be independently manufactured. For example, the first retaining wall structure can include an independently manufactured target film layer. The thickness of the target film layer in the direction perpendicular to the substrate can range from 3 microns to 6 microns. The material of the target film layer can include a material with water-resistant oxygen properties, such as silicon oxide or silicon nitride. In this way, the first retaining wall structure can not only effectively prevent the conductive material of the side wiring from entering the display area, but also protect the first surface wiring from water and oxygen corrosion. In addition, the target film layer can be manufactured through a composition process. The composition process involved in the embodiment of the present application can include coating photoresist, exposure, development, etching, and stripping photoresist.

[0088] In an exemplary embodiment, the display panel may further include a second retaining wall structure. Please refer to Figures 14 and 15. Figure 14 is a top view schematic diagram of a partial structure of another display panel provided in an embodiment of the present application, and Figure 15 is a cross-sectional structural schematic diagram of the display panel provided in Figure 14 (Figure 15 is a cross-sectional structural schematic diagram of the display panel provided in Figure 14 at G4-G4). The display panel 10 includes: a substrate 11, a first surface wiring 12, a plurality of electrode structures 13, a side wiring 14, and a first retaining wall structure 15. The first retaining wall structure 15 is located at least between any two adjacent electrode structures 13. Among the multiple cross-sections of the first retaining wall structure 15 parallel to the first surface A, at least two cross-sections have different areas. The first retaining wall structure 15 includes a protective layer 151, a first film layer 1521, a second film layer 1522, a third film layer 1523, a fourth film layer 1524, and a fifth film layer 1525, which are stacked in sequence along a direction away from the substrate 11.

[0089] The display panel 10 also includes a second retaining wall structure 18, which is located on a side of the first retaining wall structure 15 away from the side traces 14. The second retaining wall structure 18 covers the edge of the first surface traces 12 near the side traces 14, thereby preventing water and oxygen from corroding the first surface traces 12. The second retaining wall structure 18 may include multiple film layers stacked sequentially in a direction away from the substrate 11. The multiple film layers of the second retaining wall structure 18 may be manufactured independently.

[0090] Furthermore, the multiple film layers of the second retaining wall structure 18 can also be the same film layer as some of the film layers in the display area to reduce the patterning process. Referring to Figures 12 and 15 , the second retaining wall structure 18 can include a second buffer layer 171a, a first organic layer 171b, a first passivation layer 171c, a third buffer layer 172a, a second organic layer 172b, and a second passivation layer 172c. Alternatively, the second retaining wall structure 18 can be a single-layer structure, comprising a single independently manufactured film layer, which is not limited in this embodiment of the present application.

[0091] Optionally, there may be a spacing d6 between the first retaining wall structure 15 and the second retaining wall structure 18, that is, the first retaining wall structure 15 and the second retaining wall structure 18 are separated and discontinuous. If the first retaining wall structure 15 causes the film layer to peel off due to etching, since the first retaining wall structure 15 and the second retaining wall structure 18 are separated, the first retaining wall structure 15 can be prevented from bulging along with the second retaining wall structure and the film layer of the display area, thereby preventing the first surface wiring 12 from being corroded due to the bulging of the film layer.

[0092] Optionally, the distance d6 between the first retaining wall structure 15 and the second retaining wall structure 18 can range from 10 microns to 110 microns. Considering process accuracy, within this range, by setting d6 to be greater than or equal to 10 microns, the first retaining wall structure 15 and the second retaining wall structure 18 can be ensured to be separated. Furthermore, by setting d6 to be less than or equal to 110 microns, the dimension d7 of the first retaining wall structure 15 in the second direction Y can be ensured to be greater than or equal to 30 microns, thereby allowing the first retaining wall structure 15 to block the conductive material of the side traces 14. In addition, the dimension of the first retaining wall structure 15 in the second direction Y is d7, and the minimum distance between the edge of the second retaining wall structure 18 close to the side surface and the second contour L2 in the second direction Y is d8. d7 and d8 can be determined based on the minimum distance d2 between the first position E1 of the first contour L1 and the second contour L2. For example, the dimension d7 of the first retaining wall structure 15 in the second direction Y can range from 30 microns to 130 microns, and the minimum distance d8 between the edge of the second retaining wall structure 18 close to the side surface and the second contour L2 in the second direction Y can range from 10 microns to 100 microns.

[0093] Figures 14 and 15 illustrate a situation where the first retaining wall structure and the second retaining wall structure are separated. There is another situation where the first retaining wall structure and the second retaining wall structure exist. Please refer to Figure 16, which is a top view of a partial structure of another display panel provided in an embodiment of the present application, wherein the second retaining wall structure 18 is located on a side of the first retaining wall structure 15 away from the side wiring 14, and the first retaining wall structure 15 is connected to the second retaining wall structure 18. For the display panel shown in Figure 16, since the first retaining wall structure 15 and the second retaining wall structure 18 are connected, there is no spacing between the first retaining wall structure 15 and the second retaining wall structure 18. Therefore, the maximum dimension d7 of the first retaining wall structure 15 in the second direction Y can range from 40 microns to 140 microns.

[0094] In an exemplary embodiment, the display panel may further include a fourth buffer layer. Please refer to Figure 17. Figure 17 is a schematic diagram of the cross-sectional structure of a partial structure in another display panel provided in an embodiment of the present application. The display panel 10 includes a first retaining wall structure 15 and a second retaining wall structure 18. The second retaining wall structure 18 is located on the side of the first retaining wall structure 15 away from the side wiring, and the first retaining wall structure 15 is connected to the second retaining wall structure 18.

[0095] The display panel 10 also includes a fourth buffer layer 19, which is located between the first surface traces 12 and the first retaining wall structure 15. The fourth buffer layer 19 can improve the bonding strength between the first surface traces 12 and the first retaining wall structure 15. The material of the fourth buffer layer 19 may include silicon nitride and / or silicon oxide treated with silane (SiH4), thereby improving the adhesion of the fourth buffer layer 19. Silane treatment refers to the addition of silane to a material to form partial covalent bonds in the material, and silane treatment can be used to improve the adhesion of the material.

[0096] In addition, there are many situations for the relative position between the edge of the fourth buffer layer 19 close to the side surface and the edge of the first retaining wall structure 15 close to the side surface. For example, please refer to Figure 17, the edge L4 of the fourth buffer layer 19 close to the side surface can be flush with the edge of the substrate 11, and the thickness of the fourth buffer layer 19 in the direction perpendicular to the substrate 11 can be less than 3000 angstroms.

[0097] In addition, please refer to FIG18 , which is a schematic cross-sectional view of a partial structure of another display panel provided in an embodiment of the present application. The display panel 10 includes a first retaining wall structure 15 and a second retaining wall structure 18. The second retaining wall structure 18 is located on a side of the first retaining wall structure 15 away from the side wiring, and the first retaining wall structure 15 is connected to the second retaining wall structure 18. The display panel 10 also includes a fourth buffer layer 19. An edge L4 of the fourth buffer layer 19 near the side surface is located on a side of the first position E1 of the first retaining wall structure 15 away from the side surface. The minimum distance d9 between the edge L4 of the fourth buffer layer 19 near the side surface and the edge L5 of the first surface wiring 12 near the side surface can be greater than or equal to 20 microns. This ensures that the fourth buffer layer 19 can cover the edge L5 of the first surface wiring 12 near the side surface. The fourth buffer layer 19 can also protect the first surface wiring 12 from water and oxygen corrosion.

[0098] In summary, embodiments of the present application provide a display panel and display device including a first retaining wall structure. In this display panel, the first retaining wall structure is located at least between any two adjacent electrode structures, and among multiple cross-sections of the first retaining wall structure parallel to the first surface, at least two cross-sections have different areas. The cross-sections of the first retaining wall structure with different areas are formed by laser etching. This allows for the removal of at least a portion of the conductive material accumulated on the first retaining wall structure during the formation of the side wiring, thereby preventing this accumulated conductive material from causing a short circuit in adjacent electrode structures, thereby improving the yield of the display panel.

[0099] On the other hand, embodiments of the present application provide a display device, which may include a display structure and any of the above-described display panels, wherein the display structure is located on the display panel. Because the display device includes the display panel provided in the above-described embodiments, the display device can also achieve similar effects, that is, can enhance the display effect of the display device.

[0100] In this application, the term "and / or" simply describes an association between related objects, indicating that three possible relationships exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the related objects are in an "or" relationship.

[0101] In this application, the term "at least one of A and B" simply describes an association relationship between associated objects, indicating that three possible relationships exist. For example, "at least one of A and B" can mean: A exists alone, A and B exist simultaneously, and B exists alone. Similarly, "at least one of A, B, and C" means that seven possible relationships exist, indicating: A exists alone, B exists alone, C exists alone, A and B exist simultaneously, A and C exist simultaneously, C and B exist simultaneously, and A, B, and C exist simultaneously. Similarly, "at least one of A, B, C, and D" means that fifteen possible relationships exist, indicating: A exists alone, B exists alone, C exists alone, D exists alone, A and B exist simultaneously, A and C exist simultaneously, A and D exist simultaneously, C and B exist simultaneously, D and B exist simultaneously, C and D exist simultaneously, C and D exist simultaneously, A, B, and C exist simultaneously, A, B, and D exist simultaneously, A, C, and D exist simultaneously, B, C, and D exist simultaneously, and A, B, C, and D exist simultaneously.

[0102] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it may be the only layer between the two layers or elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.

[0103] In this application, the terms "first," "second," "third," "fourth," "fifth," "sixth," "seventh," "eighth," "ninth," "tenth," and "eleventh" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless expressly limited otherwise.

[0104] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A display panel, comprising: A substrate having opposite first and second surfaces and a plurality of side surfaces connecting the first and second surfaces, the first surface including a display region and a peripheral region surrounding the display region; A first surface trace located in the display region of the first surface, an electrode structure located in the peripheral region of the first surface, and a plurality of side traces located on at least one of the plurality of side surfaces; Wherein one end of each of the side traces is electrically connected to the electrode structure, and the other end extends to the second surface through the first surface and the at least one side surface in sequence, and the electrode structure is also electrically connected to the first surface trace; There are a plurality of the electrode structures, which are arranged at intervals in a first direction, and the first direction is a direction parallel to at least one of the plurality of side surfaces; A first barrier structure is at least located between any two adjacent electrode structures, and among the plurality of cross-sections of the first barrier structure parallel to the first surface, at least two cross-sections have different areas; The cross-section with the smallest area among the plurality of cross-sections is the first cross-section. The first cross-section has a first contour in the positive projection on the first surface, and the first surface trace has a second contour in the positive projection on the first surface. The minimum distance d1 between the first contour and the second contour in a second direction is not less than 10 micrometers, and the second direction is a direction perpendicular to the first direction.

2. The display panel according to claim 1, characterized in that In the second direction, the first contour and the second contour satisfy 1 / 2 < d2 / d3 < 3, where d2 is the minimum distance between a first position of the first contour and the second contour, d3 is the minimum distance between the edge of the electrode structure away from the side trace and the second contour, and the first position is the position on the first contour that is farthest from the second contour.

3. The display panel according to claim 2, characterized in that In the second direction, the first contour and the second contour satisfy 1 < d2 / d3 < 3.

4. The display panel according to claim 1, characterized in that The first barrier structure includes a plurality of stacked film layers, and the thickness of the plurality of stacked film layers in the direction perpendicular to the substrate ranges from 3 micrometers to 6 micrometers.

5. The display panel according to claim 4, characterized in that The first barrier structure includes a protective layer and at least one film layer. The protective layer is located on the substrate where the first surface trace is formed, and the edge of the protective layer close to the side trace is located on the side of the first surface trace close to the side trace, and the at least one film layer is stacked on the protective layer.

6. The display panel according to claim 5, characterized in that In the second direction, the position where the protective layer is closest to the side surface is the second position, and the position where the at least one film layer is closest to the side surface is the third position; In the second direction, the second position and the third position are flush, or, in the second direction, the third position is located on the side of the second position close to the side surface.

7. The display panel according to claim 6, characterized in that When the third position is located on the side of the second position close to the side surface in the second direction, the third position and the second position have a specified distance in the second direction, and the range of the specified distance is from 20 micrometers to 100 micrometers.

8. The display panel according to claim 1, characterized in that The first barrier structure includes a target film layer, and the thickness of the target film layer in a direction perpendicular to the substrate ranges from 3 micrometers to 6 micrometers.

9. The display panel according to any one of claims 1 to 8, characterized in that In the second direction, the minimum distance range between the first position of the first contour and the second contour is: 50 micrometers to 150 micrometers, and the first position is the position on the first contour that is farthest from the second contour.

10. The display panel according to any one of claims 1 to 8, characterized in that The display panel further includes a second barrier structure, the second barrier structure is located on a side of the first barrier structure away from the side trace, and the second barrier structure covers an edge of the first surface trace close to the side trace.

11. The display panel according to claim 10, characterized in that The first barrier structure is connected to the second barrier structure.

12. The display panel according to claim 10, characterized in that There is a spacing between the first barrier structure and the second barrier structure.

13. The display panel according to claim 12, characterized in that The range of the spacing between the first barrier structure and the second barrier structure is: 10 micrometers to 110 micrometers.

14. A display device, characterized in that The display device includes a display structure and the display panel according to any one of claims 1 to 13, and the display structure is located on the display panel.

Images