Laser processing method based on chalcogenide material, and integrated photonic device

Abstract

A laser processing method based on a chalcogenide material, and an integrated photonic device, which relate to the technical field of the processing of integrated photonic chips. The laser processing method based on a chalcogenide material comprises: acquiring a dielectric substrate of a preset size, and cleaning the dielectric substrate; preparing a uniform and dense sulfide thin film on the surface of the dielectric substrate; obtaining laser spots of a preset energy distribution pattern on the basis of a preset processing pattern; generating laser spot scanning parameters on the basis of the preset processing pattern; and performing etching-free laser oxidation processing on the sulfide thin film by means of the laser spots and according to the light spot scanning parameters, so as to obtain a chalcogenide integrated photonic device. The laser processing method based on a chalcogenide material can achieve the technical effects of significantly simplifying the processing procedures of an integrated photonic chip and improving the processing efficiency of the photonic chip.

Description

A laser processing method based on chalcogenide materials and integrated photonic device Technical Field

[0001] The present invention relates to the technical field of integrated photonic chip processing, and more specifically, to a laser processing method based on chalcogenide materials and an integrated photonic device. Background Art

[0002] At present, in the field of integrated photonic chip manufacturing, there are three main types of technical solutions for microscale dielectric control of light-stimulated optical materials: semiconductor micro-nano processing technology based on lithography, dielectric control technology based on femtosecond laser modification, and three-dimensional printing technology based on photoresist.

[0003] Semiconductor micro-nano processing technology based on photolithography can achieve large-scale, low-cost manufacturing for silicon-based photonic integrated devices with mature photolithography technology by utilizing industrial standard production, and is currently the mainstream solution for photonic integrated chip processing. However, semiconductor micro-nano processing technology based on photolithography has a high hardware threshold, micro-nano processing equipment is expensive and difficult to purchase, and the comprehensive cost of this type of micro-nano processing is not low due to the comprehensive equipment operation and maintenance requirements. In addition, the processing technology is complicated, and the standard etching process usually includes 5 to 6 steps, which cannot be processed and formed in a single time.

[0004] The dielectric control technology based on femtosecond laser modification uses femtosecond laser to irradiate the interior of transparent materials, and uses the characteristics of ultra-short pulse time and ultra-strong peak energy of femtosecond laser to induce the material's multi-photon nonlinear absorption of the incident laser, causing ionization, resulting in material modification and refractive index changes in the focused irradiation area. By controlling the material modification area, optical devices such as optical waveguides and optical switches can be processed. However, the dielectric control technology based on femtosecond laser modification requires the use of expensive femtosecond lasers as processing light sources, which has high processing costs. In addition, the processing precision is not enough. This processing method requires the use of high-energy femtosecond pulse lasers to bombard the material to melt or vaporize it. The modified area formed in this way usually has a relatively rough interface. In addition, the depth of dielectric control of materials by femtosecond laser modification is limited. Under normal circumstances, the refractive index of transparent materials modified by femtosecond lasers only changes by 10 -3 Such a small refractive index difference can only meet the requirements of devices such as optical waveguides and optical switches.

[0005] Photoresist-based 3D printing technology utilizes the two-photon absorption effect of photoresist to focus femtosecond laser pulses and illuminate the interior of the photoresist, selectively hardening different areas of the photoresist. The hardening only occurs within the three-dimensional region where the laser light is focused. All unhardened material is then removed, revealing the constructed three-dimensional structure. However, photoresist-based 3D printing technology has a high hardware threshold and requires the use of a femtosecond laser as a processing light source, which is relatively expensive. The processing steps are also cumbersome. Similar to semiconductor micro-nano processing technology, photoresist-based 3D printing technology requires the removal of excess photoresist after processing is completed. It also requires a development and debonding step, making it impossible to directly form the structure in a single process.

[0006] Summary of the Invention

[0007] In order to overcome the above-mentioned defects in the prior art, the present invention provides a laser processing method and integrated photonic device based on chalcogenide materials, which significantly simplifies the processing flow of integrated photonic chips and improves the processing efficiency of photonic chips.

[0008] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0009] In a first aspect, the present application provides a laser processing method based on chalcogenide materials, comprising the following steps:

[0010] Obtaining a dielectric substrate of a preset size and cleaning the dielectric substrate;

[0011] preparing a uniform and dense sulfide film on the surface of the dielectric substrate;

[0012] Obtaining a laser spot with a preset energy distribution pattern according to a preset processing pattern;

[0013] generating laser spot scanning parameters according to the preset processing pattern;

[0014] The sulfide film is subjected to non-etching laser oxidation processing by the laser spot according to the spot scanning parameters to obtain a chalcogenide integrated photonic device.

[0015] In the above implementation process, the laser processing method based on chalcogenide materials obtains a laser spot with a preset energy distribution pattern through a preset processing pattern, and designs a scanning mode of the laser spot according to the preset processing pattern, thereby performing non-etching laser oxidation processing on the sulfide film, realizing micro-scale photo-induced directional oxidation of the chalcogenide material, and precisely controlling the oxidation degree of the sulfide film, thereby changing the dielectric constant of the sulfide film; thus, based on the single-shot forming microscale pattern (preset processing pattern) of photo-induced oxidation, a microscale oxidation area pattern of any desired shape is formed at one time by directly irradiating the focused laser spot on the continuous and smooth surface of the sulfide film; this method does not require photoresist or other forms of mask plates, does not require etching, directly processes on the surface of the chalcogenide material film, single-shot forming, and simple processing technology; therefore, the laser processing method based on chalcogenide materials can simplify the processing flow of integrated photonic chips and achieve the technical effect of improving processing efficiency.

[0016] Furthermore, the extinction coefficient of the sulfide material of the sulfide film in the target band is greater than or equal to 0.05, and the sulfide material is one or more of antimony sulfide, germanium tellurium sulfur, germanium antimony telluride, germanium arsenic sulfur, and germanium tellurium selenide. The target band is one of the visible light band, short-wave infrared band, medium-wave infrared band, and long-wave infrared band.

[0017] Furthermore, the laser light source of the laser spot is a continuous laser, and the wavelength of the continuous laser is selected from any wavelength whose extinction coefficient of the sulfide material is greater than or equal to 0.05.

[0018] Furthermore, the processing area of ​​the sulfide film heats up under the irradiation of the laser spot, and the heated processing area reacts with oxygen ions in the processing environment and is oxidized, and the processing environment includes one or more of air, oxygen, water and oxygen ion solution; the refractive index of the first material before oxidation and the refractive index of the second material after oxidation in the irradiated area of ​​the sulfide film are different, and the difference between the refractive index of the first material and the refractive index of the second material in the working band is not less than 0.1.

[0019] Furthermore, the preset processing pattern is obtained by changing the energy distribution of the laser spot and changing the scanning mode of the laser spot.

[0020] Furthermore, the oxidation degree of the material in the laser spot processing area can be controlled in multiple stages by adjusting the spot energy, irradiation time and scanning mode.

[0021] Furthermore, there is only a slight difference between a first film thickness of the processed area of ​​the sulfide film before laser processing and a second film thickness after laser processing, and the ratio of the second film thickness to the first film thickness is between 0.8 and 1.2.

[0022] Furthermore, the preset processing pattern includes one or more of a circle, an ellipse, a rectangle, a cross, a circular ring, an elliptical ring, a square ring, a negative cross pattern, a circular array, an elliptical array, a rectangular array, a cross array, a circular ring array, an elliptical ring array, a square ring array, and a negative cross pattern array.

[0023] Furthermore, if the chalcogenide material of the selected sulfide film also has phase change properties, the integrated photonic device processed by laser oxidation has programmable optical response and non-volatile properties, and the phase change material includes one or more of antimony sulfide and antimony selenide.

[0024] In a second aspect, the present application provides an integrated photonic device, which is prepared by the above-mentioned laser processing method based on chalcogenide materials. The preparation process of the integrated photonic device does not require the introduction of additional masked or maskless exposure and etching steps.

[0025] Furthermore, the integrated photonic device can be applied to multiple fields such as spatial light field control, on-chip optical signal transmission, and on-chip optical signal processing.

[0026] Furthermore, the spatial light field control effect includes but is not limited to light field amplitude control, light field phase control, light field polarization control, reflected light field focusing, and reflected OAM vortex beam generation.

[0027] Furthermore, the on-chip optical signal transmission effect includes but is not limited to an on-chip waveguide, an on-chip Mach-Zehnder interferometer, a waveguide splitter, a polarization beam splitter, and the like.

[0028] Furthermore, when the chalcogenide compound material has phase change properties and the material phase can be controlled by external light, electricity, heat and other excitation signals, the planar chalcogenide integrated photonic device has the characteristics of non-volatile and programmable optical response.

[0029] Furthermore, the phase change chalcogenide material includes but is not limited to antimony sulfide, germanium antimony telluride, etc.

[0030] Furthermore, the dynamic control effect of the optical response includes but is not limited to a spatial optical switch, a switchable Fresnel lens, an integrated waveguide phase shifter, an adjustable Mach-Zehnder interference optical switch, an adjustable splitting ratio waveguide beam splitting optical switch, etc.

[0031] In a third aspect, the present application provides a laser processing device based on chalcogenide materials, which is applied to the laser processing method based on chalcogenide materials described in any one of the first aspects, wherein the device includes a processing light source, a beam control system, a focusing system, a sample fixing system, and a white light observation system;

[0032] The processing light source is used to output a laser beam;

[0033] The beam control system is provided at the exit end of the processing light source, and is used to control the laser beam into a laser spot with a preset energy distribution pattern;

[0034] The converging system is provided at the exit end of the beam control system, and is used to converge the laser spot and image the laser spot onto the surface of the sample to be processed;

[0035] The sample fixing system is arranged at the outlet end of the convergence system and is used to fix the sample to be processed;

[0036] The white light observation system is arranged between the light beam control system and the focusing system, and is used to observe the morphology of the processing area of ​​the sample to be processed.

[0037] Furthermore, the sample fixing system includes a three-axis translation stage, a pitch adjustment stage and a rotation adjustment stage stacked in sequence, wherein the three-axis translation stage is used to control the processing position of the sample to be processed, the pitch adjustment stage is used to adjust the pitch angle of the sample to be processed, and the rotation adjustment stage adjusts the rotation angle of the sample to be processed;

[0038] The laser processing device based on chalcogenide materials further includes an electric power attenuator and a high-speed optical switch. The electric power attenuator is connected to the processing light source and is used to adjust the laser power of the laser beam; the high-speed optical switch is connected to the processing light source and is used to adjust the on / off of the beam.

[0039] The white light observation system also includes a beam splitter, which is arranged between the beam control system and the convergence system. The beam splitter is used to combine the collimated parallel white light beam with the laser beam, and irradiate the processing area of ​​the sample to be processed with the white light beam. The white light reflection beam of the sample to be processed is irradiated to the white light observation system through the beam splitter.

[0040] Other features and advantages disclosed in the present application will be described in the following description, or some features and advantages can be inferred or determined without doubt from the description, or can be learned by implementing the above-mentioned technology disclosed in the present application.

[0041] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0043] FIG1 is a schematic flow chart of a laser processing method based on chalcogenide materials provided in Example 1 of the present application.

[0044] FIG2 is a schematic flow chart of another laser processing method based on chalcogenide materials provided in Example 2 of the present application.

[0045] FIG3 is a schematic structural diagram of a chalcogenide material laser oxidation processing device provided in Example 3 of the present application.

[0046] FIG4 is a schematic structural diagram of a planar chalcogenide integrated photonic device processed by laser oxidation without etching provided in Example 4 of the present application.

[0047] FIG5 is a schematic diagram of the structure of a sulfur-based polarizer processed by laser oxidation without etching provided in Example 5 of the present application.

[0048] FIG6 is a schematic diagram of the reflectance spectrum of a sulfur-based polarizer processed by laser oxidation without etching provided in Example 5 of the present application.

[0049] FIG7 is a schematic diagram of the structure of a sulfur-based planar Fresnel zone plate processed by laser oxidation without etching provided in Example 6 of the present application.

[0050] FIG8 is a schematic diagram of the light intensity distribution of a sulfur-based planar Fresnel zone plate processed by laser oxidation without etching provided in Example 6 of the present application.

[0051] FIG9 is a schematic diagram of the structure of a sulfur-based planar first-order OAM phase plate processed by laser oxidation without etching provided in Example 7 of the present application.

[0052] Figure 10 is a schematic diagram of the far-field light intensity distribution reflected by a sulfur-based planar first-order OAM phase plate processed by laser oxidation without etching provided in Example 7 of the present application.

[0053] FIG11 is a schematic diagram of a sulfur-based planar waveguide structure processed by laser oxidation without etching provided in Example 8 of the present application.

[0054] FIG12 is a schematic diagram of the dynamic control effect of the equivalent refractive index of a sulfur-based planar waveguide mode processed by laser oxidation without etching provided in Example 8 of the present application.

[0055] FIG13 is a schematic structural diagram of a sulfur-based planar waveguide phase change optical phase shifter processed by laser oxidation without etching provided in Example 9 of the present application.

[0056] FIG14 is a schematic diagram of the dynamic phase control effect of a sulfur-based planar waveguide phase change optical phase shifter processed by laser oxidation without etching provided in Example 9 of the present application.

[0057] FIG15 is a schematic diagram of the structure of a sulfur-based planar waveguide Mach-Zehnder interference optical switch processed by etching-free laser oxidation provided in Example 10 of the present application.

[0058] FIG16 is a schematic diagram of the dynamic control effect of a sulfur-based planar waveguide Mach-Zehnder interference optical switch device processed by laser oxidation without etching provided in Example 10 of the present application.

[0059] FIG17 is a schematic diagram of the structure of a sulfur-based planar on-chip beam splitting optical switch with adjustable splitting ratio that is processed by laser oxidation without etching, provided in Example 11 of the present application.

[0060] FIG18 is a schematic diagram showing the dynamic control effect of a sulfur-based planar on-chip beam splitting optical switch with adjustable splitting ratio that is processed by laser oxidation without etching, as provided in Example 11 of the present application.

[0061] FIG19 is a schematic diagram of the dynamic polarization splitting control effect of a sulfur-based planar adjustable splitting ratio on-chip beam splitting optical switch provided in Example 11 of the present application, which is processed by laser oxidation without etching.

[0062] Figure numerals: 1. silicon substrate; 2. gold reflective layer; 3. aluminum oxide layer; 4. antimony sulfide; 5. antimony oxide; 6. planar structure array; 7. silicon oxide substrate; 8. waveguide; 9. silicon oxide buffer layer; 10. graphene hot plate; 11. metal N electrode; 12. metal P electrode; 13. input end P1; 14. output end P2; 15. straight waveguide; 151. first output straight waveguide; 152. second output straight waveguide; 16. beam splitting waveguide; 17. beam combining waveguide; 18. evanescent coupling waveguide; 100. processing light source; 200. beam control system; 300. convergence system; 400. sample fixing system; 500. white light observation system; 600. sample to be processed; 700. beam splitter. DETAILED DESCRIPTION

[0063] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The present invention is described in one of the embodiments below in combination with the specific implementation methods. Among them, the drawings are only for illustrative purposes and represent only schematic diagrams rather than physical drawings, and cannot be understood as limitations on this patent; in order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0064] In the description of the present invention, it should be understood that if the terms "upper," "lower," "left," "right," etc. indicate an orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, they are only for the purpose of facilitating the description of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, the terms describing the positional relationship in the accompanying drawings are only for illustrative purposes and should not be construed as limiting this patent. For those skilled in the art, the specific meanings of the above terms can be understood based on the specific circumstances. In addition, if there are descriptions of "first," "second," etc. in the embodiments of the present invention, the descriptions of "first," "second," etc. are only for descriptive purposes and should not be construed as indicating or implying their relative importance or implicitly indicating the number of the technical features indicated. Therefore, the definition of "first" or "second" may explicitly or implicitly include at least one of the features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or solutions that meet both A and B.

[0065] Example 1:

[0066] The embodiments of the present application provide a laser processing method and integrated photonic process based on chalcogenide materials, which can be applied to the processing of chalcogenide integrated photonic chips. The laser processing method based on chalcogenide materials is an etching-free laser processing method, in which a laser spot with a preset energy distribution pattern is obtained by a preset processing pattern, and a sulfide film is subjected to etching-free laser oxidation processing based on the laser spot, thereby achieving precise control of the oxidation degree of the sulfide film surface at a microscale, thereby changing the dielectric constant of the sulfide film, and having the characteristics of non-volatile and one-time processing and forming. Therefore, the laser processing method can achieve the technical effect of improving processing efficiency.

[0067] For example, non-volatile dielectric tunability refers to the ability of an optical material's dielectric constant to change significantly through external laser irradiation, and when the excitation signal is removed, the material retains its current dielectric properties. One-shot forming involves the creation of a single microscale pattern (pre-set processing pattern) using non-etching laser processing. Oxidation processing, combined with beam shaping technology, involves directly directing a focused laser spot onto the surface of a continuous, smooth sulfide film to create microscale oxidation regions of any desired shape.

[0068] For example, the laser processing method based on chalcogenide materials provided in the embodiments of the present application does not require the use of photoresist and mask, has a simple processing process, and can be formed in a single shot. Compared with traditional micro-nanostructure device processing technology, in technologies such as EBL etching, ICP etching, or wet etching based on photoresist and mask, the process includes: preparing the mask, spin coating the photoresist, exposure, development, thin film deposition (or etching), and degumming, etc. In FIB etching that does not require a mask and maskless photolithography based on DMD, other standard etching processes other than preparing the photomask are usually required.

[0069] For example, the dielectric control principle of sulfide oxide films is as follows: when the sulfide film material (for example, antimony sulfide Sb2S3) is heated to its ignition point in air (usually 290°C to 340°C), it easily reacts with oxygen in the air to produce antimony trioxide and sulfur dioxide. The chemical reaction equation is:

[0070] In the near-infrared band of 700nm to 1700nm, the refractive index of antimony trioxide is significantly smaller than that of antimony sulfide, and the difference in refractive index between the two is about 1. At the same time, in this band, since the extinction coefficient of antimony trioxide is less than 0.04, it is a good low-absorption transparent material in the near-infrared band. Based on this, the embodiment of the present application irradiates the surface of antimony sulfide with a laser, so that the antimony sulfide in the irradiated area heats itself by absorbing light energy, and then oxidizes to generate antimony trioxide. Since the crystalline antimony trioxide lattice generated by thermal oxidation is a cube with a more stable spatial structure, a uniform oxidation area with dielectric properties that are very different from antimony sulfide can be achieved on the surface of the antimony sulfide film. On the other hand, the dielectric constant of the irradiated area satisfies:

[0071] Among them, ε eff , ε Ox and ε a are the equivalent dielectric constant of the irradiated area, the dielectric constant of antimony trioxide and the refractive index of amorphous antimony sulfide. OxTo control the oxidation ratio of the irradiated area, the temperature of the antimony sulfide in the irradiated area is adjusted by controlling the laser power, thereby regulating the oxidation degree of the antimony sulfide. In this way, the dielectric constant of the irradiated area can be continuously adjusted between amorphous antimony sulfide and antimony trioxide.

[0072] Example 1

[0073] Please refer to FIG1 , which is a schematic flow chart of a laser processing method based on chalcogenide materials provided in an embodiment of the present application. The processing method includes the following steps:

[0074] S100: Obtain a medium substrate of a preset size and clean the medium substrate.

[0075] In some embodiments, a dielectric substrate that meets the design size requirements is selected and the surface and back of the dielectric substrate are cleaned to remove dust particles, organic and inorganic impurities attached to the dielectric substrate.

[0076] In some embodiments, the dielectric substrate cleaning process includes ultrasonically cleaning the dielectric substrate in an acetone solution for 15 minutes, ultrasonically cleaning the dielectric substrate in an isopropyl alcohol solution for 15 minutes, and ultrasonically cleaning the dielectric substrate in an ultrapure water solution for 15 minutes. The dielectric substrate's front and back surfaces are then dried using a high-purity argon gas gun and heated on a hot plate for 5 minutes to obtain a clean dielectric substrate. Alternatively, depending on specific experimental requirements, other thin film materials, such as gold, aluminum oxide, or silicon oxide, can be added to the dielectric substrate's surface, thereby providing the substrate material required for sulfide coating.

[0077] S200: preparing a uniform and dense sulfide film on the surface of the dielectric substrate.

[0078] For example, a uniform and dense sulfide film can be prepared on the surface of a dielectric substrate (substrate material) by using a magnetron sputtering method or a thermal evaporation method.

[0079] S300: Obtaining a laser spot with a preset energy distribution pattern according to a preset processing pattern.

[0080] For example, according to the shape and resolution parameter requirements of the preset processing pattern, the size and number of the processing write field units and the dielectric control requirements within each unit are determined, and the processing control program parameters are set according to the requirements to obtain a laser spot with a preset energy distribution pattern.

[0081] S400: Generate laser spot scanning parameters according to a preset processing pattern;

[0082] S500: performing non-etching laser oxidation processing on the sulfide film according to the laser spot scanning parameters to obtain a sulfide integrated photonic device.

[0083] For example, the processing system is waited for to complete the oxidation processing operation on all pixel areas of the sulfide film, and the processing of the sulfide film is completed, and finally the sulfide film is removed.

[0084] In some embodiments, the non-etching laser processing method obtains a laser spot with a preset energy distribution pattern through a preset processing pattern, and performs non-etching laser processing on the sulfide film based on the laser spot, thereby achieving precise control of the oxidation degree of the sulfide film surface at a microscale, thereby changing the dielectric constant of the sulfide film, and having the characteristics of non-volatile and one-time processing and forming; thus, the non-etching laser processing method can achieve the technical effect of improving processing efficiency.

[0085] Example 2

[0086] Please refer to Figure 2, which is a flow chart of another laser processing method based on chalcogenide materials provided in an embodiment of the present application. The method includes the following steps:

[0087] S100: Obtain a medium substrate of a preset size and clean the medium substrate.

[0088] S210: preparing a uniform and dense sulfide film on the surface of the dielectric substrate by magnetron sputtering or thermal evaporation.

[0089] S310: Fixing the sulfide film to a sample fixing system of the non-etching laser processing device.

[0090] S320: regulating the non-etching laser processing device according to a preset processing pattern to obtain a laser spot with a preset energy distribution pattern.

[0091] S400: Generate laser spot scanning parameters according to a preset processing pattern.

[0092] S510: Setting processing parameters of the non-etching laser processing device according to the total size of the preset processing pattern, the size of the writing field unit, and the total number of writing fields;

[0093] S520: Synchronously adjusting the laser processing device according to the dielectric control parameters of the write field unit in the preset processing pattern to control the laser spot;

[0094] S530: performing non-etching laser processing on the sulfide film using processing parameters and laser spot of the non-etching laser processing device.

[0095] In this embodiment, different from the first embodiment, the step of performing non-etching laser oxidation processing on the sulfide film according to the laser spot scanning parameters to obtain the chalcogenide integrated photonic device in S500 includes:

[0096] S510: Setting processing parameters of the non-etching laser processing device according to the total size of the preset processing pattern, the size of the writing field unit, and the total number of writing fields;

[0097] S520: Synchronously adjusting the laser processing device according to the dielectric control parameters of the write field unit in the preset processing pattern to control the laser spot;

[0098] S530: performing non-etching laser processing on the sulfide film using processing parameters and laser spot of the non-etching laser processing device.

[0099] For example, after all parameters are set, the process control program is run. The system automatically and dynamically controls the spatial distribution of visible light energy, irradiation power, and the movement of the sulfide film in real time based on the set process parameters. During system operation, the process parameters set the movement of the sulfide film, causing the irradiated laser spot to sequentially move into the writing area of ​​the sulfide film.

[0100] Exemplarily, S530: the step of performing non-etching laser processing on the sulfide film using processing parameters and laser spot of a non-etching laser processing device includes:

[0101] The continuous laser spot irradiates the surface of the sulfide film, and the sulfide in the irradiated area of ​​the sulfide film rises to 270°C to 340°C. The sulfide reacts chemically with oxygen in the air to form oxides in the irradiated area of ​​the sulfide film and releases sulfur dioxide into the air. Among them, the refractive index of the sulfide film changes by more than 0.1.

[0102] For example, a continuous laser is applied to the surface of a sulfide film to be processed. The sulfide in the irradiated area rapidly heats to between 270°C and 340°C within a few hundred nanoseconds. The sulfide then reacts chemically with oxygen in the air, forming antimony oxide within the irradiated area and releasing sulfur dioxide into the air. The proportion of oxides in the irradiated area (the degree of laser oxidation) is affected by the stage's movement speed and the laser irradiation power, thereby lowering the refractive index of the film in the irradiated area by varying degrees. In the C band, the maximum refractive index reduction of 0.3 to 0.7 can be achieved by slowing the stage's movement speed or increasing the laser irradiation power.

[0103] In this embodiment, different from the first embodiment, the step of obtaining a laser spot with a preset energy distribution pattern according to a preset processing pattern in S300 includes:

[0104] S310: fixing the sulfide film to a sample fixing system of a non-etching laser processing device;

[0105] S320: regulating the non-etching laser processing device according to a preset processing pattern to obtain a laser spot with a preset energy distribution pattern.

[0106] In this embodiment, different from the embodiment 1, the step of S200: preparing a uniform and dense sulfide film on the surface of the dielectric substrate includes:

[0107] S210: preparing a uniform and dense sulfide film on the surface of the dielectric substrate by magnetron sputtering or thermal evaporation.

[0108] In some embodiments, the steps for preparing a sulfide thin film by magnetron sputtering are as follows: secure a sulfide target material to a cathode. Place the prepared substrate material on an anode facing the target surface. When the vacuum reaches 5x10-4 Pa, introduce argon gas. Once the gas flow stabilizes, turn on the ion source, call up the process settings file from the monitoring program, and initiate cleaning. After cleaning is complete, turn off the ion source, adjust the DC or RF power supply to the desired power, and initiate film deposition until sputtering is complete.

[0109] In some embodiments, the steps of preparing a sulfide thin film by a thermal evaporation method are exemplified as follows: placing a substrate material on a sample stage of a vacuum coating machine and fixing it with a clamp; evacuating the vacuum degree of the vacuum coating machine to 10-6 Pa, heating the sulfide target glass by heating a tantalum evaporation boat, and depositing the thin film at an evaporation rate of 0.2-0.8 A / s (preferably, the deposition rate is 0.5 A / s), and the deposition rate and film thickness are monitored in real time by a film thickness meter in the coating machine.

[0110] Exemplarily, the sulfide film is one or more layers of sulfide film deposited on the surface of a dielectric substrate, the substrate material of the sulfide film is one of quartz glass, crystalline and amorphous silicon, and silicon nitride, and the sulfide material of the sulfide film is one of antimony sulfide, germanium tellurium sulfur, germanium antimony tellurium, germanium arsenic sulfur, and germanium tellurium selenium.

[0111] Exemplarily, before the step of S310: fixing the sulfide film to a sample fixing system of the non-etching laser processing device, the method further includes:

[0112] Turn on the processing light source of the non-etching laser processing device and preheat it for a preset time to stabilize the output power of the processing light source;

[0113] The white light observation system of the non-etching laser processing device is turned on. The white light observation system is used to observe the surface of the sulfide film.

[0114] Exemplarily, after the step of starting the white light observation system of the non-etching laser processing device, the method further includes:

[0115] Adjust the pitch adjustment stage in the sample fixing system so that the white light observation system can observe the surface of the sulfide film in the entire area to be processed;

[0116] The rotating adjustment stage in the sample fixing system is adjusted so that the placement angle of the sulfide film is consistent with the angle of the preset processing pattern.

[0117] Example 3

[0118] Please refer to Figure 3, which is a structural schematic diagram of the etching-free laser processing device provided in an embodiment of the present application. The etching-free laser processing device is applied to the laser processing method based on sulfur materials in Figures 1 to 2. The etching-free laser processing device includes a processing light source 100, a beam control system 200, a convergence system 300, a sample fixing system 400 and a white light observation system 500.

[0119] Exemplarily, the processing light source 100 is used to output a laser beam.

[0120] In some embodiments, the processing light source 100 uses a continuous laser in the visible light band, with a laser power of ≥300 mW and a beam quality M2 <1.2.

[0121] Exemplarily, the beam control system 200 is disposed at the exit end of the processing light source 100 and is used to control the laser beam into a laser spot with a preset energy distribution pattern.

[0122] Exemplarily, the converging system 300 is disposed at the exit end of the beam control system 200 , and is used to converge the laser spot and image the laser spot onto the surface of the sample 600 to be processed.

[0123] In some embodiments, the convergence system 300 images a light spot with a specific energy distribution to the rear focal plane of the objective lens through a lens imaging system, and then vertically injects the light spot into the entrance pupil of the objective lens. The objective lens shrinks the light spot and images it on the working distance plane of the objective lens, thereby obtaining a proportionally reduced laser spot with a specific energy distribution.

[0124] For example, the sample 600 to be processed is a sulfide film.

[0125] Exemplarily, the sample fixing system 400 is disposed at the outlet end of the converging system 300 and is used to fix the sample 600 to be processed.

[0126] Exemplarily, the white light observation system 500 is disposed between the beam control system 200 and the focusing system 300 , and is used to observe the morphology of the processing area of ​​the sample 600 to be processed.

[0127] Exemplarily, the sample fixing system 400 includes a three-axis translation stage, a pitch adjustment stage, and a rotation adjustment stage stacked in sequence. The three-axis translation stage is used to control the processing position of the sample 600 to be processed, the pitch adjustment stage is used to adjust the pitch angle of the sample 600 to be processed, and the rotation adjustment stage adjusts the rotation angle of the sample 600 to be processed.

[0128] Exemplarily, the non-etching laser processing device further includes an electric power attenuator and a high-speed optical switch. The electric power attenuator is connected to the processing light source 100 and is used to adjust the laser power of the laser beam; the high-speed optical switch is connected to the processing light source 100 and is used to adjust the on / off of the beam.

[0129] Exemplarily, the white light observation system 500 also includes a beam splitter 700, which is arranged between the beam control system 200 and the convergence system 300. The beam splitter 700 is used to combine the collimated parallel white light beam with the laser beam, and irradiate the processing area of ​​the sample to be processed 600 through the white light beam. The white light reflected beam of the sample to be processed 600 is irradiated to the white light observation system 500 through the beam splitter 700.

[0130] In some embodiments, the beam control system 200 first uses a specific beam conversion phase plate to convert the Gaussian beam output by the semiconductor laser into a flat-top beam, whose beam energy is relatively uniform across the entire spot range. The flat-top beam is then expanded to meet the requirements of the beam shaping device. Finally, the beam shaping device controls the energy distribution of the beam, adjusting the laser beam to a specific energy distribution pattern based on the pattern to be processed. Simultaneously, a motorized power attenuator and a high-speed optical switch are used to dynamically control the laser power and beam on / off of the processing laser beam in real time.

[0131] In some embodiments, the sample fixation system 400 utilizes a three-axis motorized precision translation stage, a manual pitch adjustment stage, and a rotation adjustment stage to secure and control the sulfide film sample being processed. The three-axis motorized precision translation stage controls the sample processing position, automatically moving the sample according to the processing program settings. The manual pitch adjustment stage and rotation adjustment stage are used to manually adjust the pitch and rotation angles of the sample before processing, ensuring that the sample's initial spatial position meets processing requirements.

[0132] Illustratively, the white light observation system 500 combines a collimated parallel white light beam with a processing laser beam through a beam splitter 700 with R:T=10:90, uses the white light beam to illuminate the sample processing area, and then uses a CCD to observe the white light reflected beam to build a reflective white light imaging microscope for real-time observation of the morphology of the processing area.

[0133] In some embodiments, the sulfide film to be processed is placed at the working plane of the objective lens, and the processing spot is focused and irradiated onto the surface of the film. Variations in parameters such as laser energy density and irradiation time will affect the degree of film oxidation in the irradiated area, and thus the dielectric control depth. By manipulating the laser spot energy distribution on the surface of the film to be processed and combining it with a three-axis precision motorized translation stage, oxidation control can be achieved in any specific pattern on the sulfide film surface.

[0134] In the embodiments of this application, a continuous laser beam is typically generated using a semiconductor laser. The laser wavelength should be within the optical absorption band of the sulfide material. Furthermore, as processing precision increases, shorter wavelength lasers are required to achieve a smaller laser spot due to the diffraction limit.

[0135] Example 4

[0136] Please refer to Figure 4, which is a schematic diagram of the structure of a chalcogenide planar integrated photonic device processed by etching-free laser oxidation provided in an embodiment of the present application. The chalcogenide material planar device is processed using the etching-free laser processing device of Figure 3 combined with the etching-free laser oxidation processing method of Figure 2.

[0137] Exemplarily, the sample substrate is a crystalline silicon substrate 1; a gold reflective layer 2 is deposited on the surface of the silicon substrate 1; the gold reflective layer 2 is prepared by electron beam evaporation; a low-refractive-index layer of aluminum oxide 3 is deposited on the surface of the gold reflective layer 2; the low-refractive-index layer of aluminum oxide 3 is prepared by atomic layer deposition; the chalcogenide material of the planar device is antimony sulfide 4; the chalcogenide material is prepared by magnetron sputtering.

[0138] Exemplarily, during the non-etching laser processing, the laser spot is circular light; the energy distribution of the laser spot is a Gaussian spot; the oxidation area of ​​the laser spot is circular; and the non-etching laser processing pattern is a two-dimensional circular array structure with a fixed period.

[0139] For example, after the chalcogenide planar integrated photonic device is processed, a single layer of aluminum oxide 3 protective layer is covered on the surface of the chalcogenide material; the aluminum oxide 3 protective layer is prepared by atomic layer deposition.

[0140] Example 5

[0141] Please refer to Figure 5, which is a schematic diagram of the structure of a near-infrared band linear plane polarizer device provided by an embodiment of the present application, which is processed by the non-etching laser processing device of Figure 3 in combination with the non-etching laser oxidation processing method of Figure 2.

[0142] Exemplarily, the sample substrate is a crystalline silicon substrate 1; a gold reflective layer 2 is deposited on the surface of the silicon substrate 1; the gold reflective layer 2 is prepared by electron beam evaporation; the thickness of the gold reflective layer 2 is 100 nm; a low-refractive-index layer of aluminum oxide 3 is deposited on the surface of the gold reflective layer 2; the low-refractive-index layer of aluminum oxide 3 is prepared by atomic layer deposition; the thickness of the low-refractive-index layer of aluminum oxide 3 is 10 nm; the chalcogenide material of the planar device is antimony sulfide 4; the chalcogenide material is prepared by magnetron sputtering; the thickness of the antimony sulfide 4 layer is 100 nm.

[0143] Exemplarily, in the non-etching laser processing process, the laser wavelength is 405 nm; the laser spot shape is circular; and the laser spot energy distribution is Gaussian distribution.

[0144] Exemplarily, the non-etching laser processed pattern is a one-dimensional linear grating array structure with a fixed period, and the grating period p is 2 μm.

[0145] For example, after the chalcogenide material planar device is processed, a single layer of aluminum oxide 3 protective layer is covered on the surface of the chalcogenide material; the aluminum oxide 3 protective layer is prepared by atomic layer deposition.

[0146] For example, the reflectance spectrum of the near-infrared polarizer is shown in Figure 6. When the polarization direction of the incident light field is parallel to the grating period direction, the reflectivity of the polarizer in the 1500nm band is close to 0. When the polarization direction of the incident light field is perpendicular to the grating period direction, the reflectivity of the polarizer in the near-infrared band is close to 1.

[0147] Example 6

[0148] Please refer to Figure 7, which is a schematic diagram of the structure of a sulfur-based planar Fresnel zone plate processed by etching-free laser oxidation provided in an embodiment of the present application. The sulfur-based material planar device is processed using the etching-free laser processing device of Figure 3 combined with the etching-free laser oxidation processing method of Figure 2.

[0149] Exemplarily, the sample substrate is a crystalline silicon substrate 1; a gold reflective layer 2 is deposited on the surface of the silicon substrate 1; the gold reflective layer 2 is prepared by electron beam evaporation; the thickness of the gold reflective layer 2 is 100 nm; a low-refractive-index layer of aluminum oxide 3 is deposited on the surface of the gold reflective layer 2; the low-refractive-index layer of aluminum oxide 3 is prepared by atomic layer deposition; the thickness of the low-refractive-index layer of aluminum oxide 3 is 10 nm; the chalcogenide material of the planar device is antimony sulfide 4; the chalcogenide material is prepared by magnetron sputtering; the thickness of the antimony sulfide 4 layer is 100 nm.

[0150] Exemplarily, in the non-etching laser processing process, the laser wavelength is 405 nm; the laser spot shape is circular; and the laser spot energy distribution is Gaussian distribution.

[0151] Exemplarily, the processing pattern of the non-etching laser processing area is a concentric ring composed of a two-dimensional dot matrix with a fixed period, and the two-dimensional dot matrix period is 1.03 um.

[0152] For example, after the near-infrared Fresnel lens is processed, a single layer of aluminum oxide 3 protective layer is covered on the surface of the chalcogenide material; the aluminum oxide 3 protective layer is prepared by atomic layer deposition.

[0153] For example, the reflectivity distribution of the near-infrared Fresnel zone plate in the near-infrared working band is shown in Figure 8. The reflectivity of the non-etched laser-processed array structure is close to 0 at a wavelength of 1550nm, and the reflectivity of the unexposed area is close to 1 at a wavelength of 1550nm, thereby achieving periodic modulation of the intensity distribution of the reflected light field and completing the focusing of the reflected light field.

[0154] Example 7

[0155] Please refer to Figure 9, which is a schematic diagram of the structure of a sulfur-based planar first-order OAM phase plate processed by etching-free laser oxidation provided in an embodiment of the present application. The sulfur-based material planar device is processed using the etching-free laser processing device of Figure 3 combined with the etching-free laser oxidation processing method of Figure 2.

[0156] Exemplarily, the sample substrate is a crystalline silicon substrate 1; a gold reflective layer 2 is deposited on the surface of the silicon substrate 1; the gold reflective layer 2 is prepared by electron beam evaporation; the thickness of the gold reflective layer 2 is 100 nm; a low-refractive-index layer of aluminum oxide 3 is deposited on the surface of the gold reflective layer 2; the low-refractive-index layer of aluminum oxide 3 is prepared by atomic layer deposition; the thickness of the low-refractive-index layer of aluminum oxide 3 is 10 nm; the chalcogenide material of the planar device is antimony sulfide 4; the chalcogenide material is prepared by magnetron sputtering; the thickness of the antimony sulfide 4 layer is 100 nm.

[0157] Exemplarily, in the non-etching laser processing process, the laser wavelength is 405 nm; the laser spot shape is circular; and the laser spot energy distribution is Gaussian distribution.

[0158] Exemplarily, the non-etching laser processing area is composed of 8 concentric sectors; each sector area is a two-dimensional lattice structure with a fixed period; the lattice periods inside the 8 sector structures are different, namely 1.015, 1.03, 1.045, 1.06, 1.075, 1.09, 1105, and 1.12um.

[0159] For example, after the first-order OAM phase plate of the chalcogenide material is processed, a single-layer aluminum oxide 3 protective layer is covered on the surface of the chalcogenide material; the aluminum oxide 3 protective layer is prepared by atomic layer deposition; and the thickness of the aluminum oxide 3 protective layer is 10 nm.

[0160] For example, the far-field light intensity distribution reflected by the near-infrared first-order OAM phase plate is shown in FIG10 .

[0161] Example 8

[0162] Please refer to the figure, FIG11 is a schematic diagram of the structure of a sulfur-based planar waveguide 8 processed by etching-free laser oxidation provided in an embodiment of the present application. The sulfur-based material planar device is processed using the etching-free laser processing device of FIG3 combined with the etching-free laser oxidation processing method of FIG2.

[0163] Exemplarily, the sample substrate is a silicon oxide substrate 7; a layer of antimony sulfide 4 is deposited on the surface of the silicon oxide substrate 7; the thickness of the antimony sulfide 4 layer is 400 nm; and the antimony sulfide 4 is prepared by magnetron sputtering.

[0164] Exemplarily, in the non-etching laser processing process, the laser wavelength is 405 nm; the laser spot shape is circular; and the laser spot energy distribution is Gaussian distribution.

[0165] The processing pattern of the non-etching laser area is two parallel strip patterns; the width of the strip processing pattern is about 3um; and the distance between the two processing patterns is about 500nm.

[0166] For example, after the chalcogenide material waveguide 8 is processed, a single layer of aluminum oxide 3 protective layer is covered on the surface of the chalcogenide material; the aluminum oxide 3 protective layer is prepared by an atomic layer substrate method; and the thickness of the aluminum oxide 3 protective layer is 30 nm.

[0167] For example, in the near-infrared communication band, after laser processing of the antimony sulfide (SbS) material without etching, the material's refractive index is significantly lower than that of the unexposed area, and significantly higher than that of the aluminum oxide (AlO) protective layer and air. Therefore, the near-infrared light field can be well trapped in the unexposed SbS structure in the center of the exposure pattern, enabling on-chip optical transmission.

[0168] The antimony sulfide 4 material provided in the embodiment of the present application has a dynamically adjustable refractive index under the stimulation of external light or electrical signals; therefore, by using external excitation signals, the refractive index of the antimony sulfide 4 material in the waveguide 8 region of the antimony sulfide 4 on-chip waveguide 8 device can be changed, thereby achieving flexible regulation of the effective refractive index of the waveguide 8 mode.

[0169] For example, the effect of dynamic control of the effective refractive index of the antimony sulfide waveguide 8 mode under the excitation of an external signal is shown in FIG12 .

[0170] Embodiment 9

[0171] Based on Example 8, this embodiment of the present application provides an on-chip optical phase shifter based on a chalcogenide material planar waveguide. Figure 13 is a schematic diagram of the structure of a chalcogenide-based planar waveguide phase-change optical phase shifter fabricated using a non-etching laser oxidation process, as provided in this embodiment of the present application. This chalcogenide material planar device is fabricated using the non-etching laser processing apparatus of Figure 3 in combination with the non-etching laser oxidation processing method of Figure 2.

[0172] Exemplarily, the on-chip optical phase shifter structure is, from bottom to top, sequentially: a silicon substrate 1, a silicon oxide buffer layer 9, an antimony sulfide 4 planar waveguide 8 layer, a graphene hot plate 10, an aluminum oxide 3 coating layer, a metal P electrode 12, and a metal N electrode 11; the antimony sulfide 4 planar waveguide 8 is prepared by the processing method provided in Example 8.

[0173] The antimony sulfide (SbS) material provided in the embodiments of the present application has a dynamically adjustable intrinsic refractive index under external light or electrical signal stimulation. Therefore, an external electrical pulse signal is injected into the highly thermally conductive graphene hot plate 10 via the metal P electrode 12 and the metal N electrode 11, heating the SbS (SbS) waveguide 8 through the resistive heating effect, causing it to undergo a phase change. By regulating the equivalent refractive index of the fixed-length SbS (SbS) waveguide 8, dynamic phase shift control of the optical signal propagating through the waveguide 8 by no less than 2π can be achieved.

[0174] For example, the dynamic phase modulation effect of the phase shifter is shown in FIG14 .

[0175] Example 10

[0176] Based on Example 8, this embodiment of the present application provides an on-chip Mach-Zehnder interferometer optical switch based on a chalcogenide material planar waveguide 8. Figure 15 is a schematic diagram of the structure of a chalcogenide-based planar waveguide Mach-Zehnder interferometer optical switch fabricated using etching-free laser oxidation, according to this embodiment of the present application. This chalcogenide material planar device is fabricated using the etching-free laser processing apparatus of Figure 3 in combination with the etching-free laser oxidation processing method of Figure 2.

[0177] Exemplarily, the on-chip Mach-Zehnder interference optical switch structure is, from bottom to top, sequentially: a silicon substrate 1, a silicon oxide buffer layer 9, an antimony sulfide 4 waveguide layer (including an input end straight waveguide 15, a beam splitting waveguide 16, an intermediate end straight waveguide 15, a beam combining waveguide 17, and an output end straight waveguide 15), a graphene hot plate 10, an aluminum oxide 3 coating layer and a metal N electrode 11, and a metal P electrode 12; the antimony sulfide 4 planar waveguide is prepared by the processing method provided in Example 8.

[0178] The antimony sulfide 4 material provided in the embodiments of the present application has a dynamically adjustable intrinsic refractive index under external light or electrical signal stimulation. Therefore, an external electrical pulse signal is injected into the highly thermally conductive graphene hot plate 10 via the metal N electrode 11 and the metal P electrode 12, heating the antimony sulfide 4 waveguide through the resistive thermal effect, causing it to undergo a phase change. By regulating the equivalent refractive index of the fixed-length antimony sulfide 4 waveguide, an effective phase shift of the optical signal propagation phase with an amplitude of not less than π is achieved, transmitted through the straight waveguide 15. Furthermore, the Mach-Zehnder interference principle is utilized to achieve large-scale dynamic control of the transmittance of the optical signal at the output end of the straight waveguide 15.

[0179] For example, the dynamic control effect of the Mach-Zehnder interference optical switch provided in the embodiment of the present application is shown in FIG16 .

[0180] Example 11

[0181] Based on Example 8, this embodiment of the present application provides an on-chip beam-splitting optical switch with adjustable splitting ratio based on a chalcogenide material planar waveguide 8. Figure 17 is a schematic diagram of the structure of a chalcogenide-based planar on-chip beam-splitting optical switch with adjustable splitting ratio, fabricated using a non-etching laser oxidation process, according to this embodiment of the present application. This chalcogenide material planar device is fabricated using the non-etching laser processing apparatus of Figure 3 in combination with the non-etching laser oxidation processing method of Figure 2.

[0182] Exemplarily, the structure of the on-chip beam splitting optical switch with adjustable splitting ratio is, from bottom to top, sequentially: silicon substrate 1, silicon oxide buffer layer 9, antimony sulfide 4 waveguide 8 layer (including a straight waveguide 15 at the input end, an evanescent coupling waveguide 18, and a straight waveguide 15 at the output end, wherein the straight waveguide 15 at the output end includes a first output straight waveguide 151 and a second output straight waveguide 152), graphene hot plate 10, aluminum oxide 3 coating layer and metal N electrode 11, metal P electrode 12; the antimony sulfide 4 planar waveguide is prepared by the processing method provided in Example 8.

[0183] The antimony sulfide (SbS) material provided in the present embodiment has a dynamically adjustable intrinsic refractive index under external light or electrical signal stimulation. Therefore, with the aid of an external electrical pulse signal, injected into the highly thermally conductive graphene hot plate 10 via the metal N-electrode 11 and metal P-electrode 12, the equivalent refractive index of a single SbS (SbS) evanescently coupled waveguide 18 of fixed length can be regulated, enabling the optical signal intensity ratio in the first output straight waveguide 151 and the second output straight waveguide 152 to be arbitrarily adjusted.

[0184] For example, the dynamic control effect of the on-chip beam splitting optical switch with adjustable splitting ratio provided in the embodiment of the present application is shown in FIG18 .

[0185] Furthermore, the on-chip beam-splitting optical switch device with adjustable splitting ratio provided in embodiments of the present application can polarization-splitting the optical signal input from the straight waveguide 15 at the input end by regulating the equivalent refractive index of a single antimony sulfide evanescent coupling waveguide 18 of fixed length. TE polarization and TM polarization optical signals are output from the first output straight waveguide 151 and the second output straight waveguide 152, respectively. In this case, the polarization state of the waveguide optical signal is changed through external modulation to adjust the intensity ratio of the TE and TM optical signals, which are then input into the waveguide device. This achieves dynamic regulation of the splitting ratio through polarization splitting.

[0186] For example, the polarization splitting dynamic modulation effect of the on-chip beam splitting optical switch device with adjustable splitting ratio provided in an embodiment of the present application is shown in FIG19 .

[0187] In all embodiments of the present application, "big" and "small" are relative, "more" and "less" are relative, and "up" and "down" are relative. The expressions of such relative terms will not be elaborated in the embodiments of the present application.

[0188] It should be understood that the phrases “in this embodiment,” “in an embodiment of the present application,” or “as an optional implementation” mentioned throughout the specification mean that specific features, structures, or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, “in this embodiment,” “in an embodiment of the present application,” or “as an optional implementation” appearing throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. Those skilled in the art should also be aware that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required for the present application.

[0189] In the various embodiments of the present application, it should be understood that the size of the serial numbers of the above-mentioned processes does not necessarily mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0190] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present application should be included within the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A laser processing method based on chalcogenide materials, characterized in that: The following steps are involved: Obtaining a medium substrate of a preset size, and cleaning the medium substrate; preparing a uniform and dense sulfide film on the surface of the dielectric substrate; Obtaining a laser spot with a preset energy distribution pattern according to a preset processing pattern; Generate laser spot scanning parameters according to the preset processing pattern; The sulfide film is subjected to non-etching laser oxidation processing by the laser spot according to the spot scanning parameters to obtain a chalcogenide integrated photonic device.

2. The laser processing method based on chalcogenide materials according to claim 1, characterized in that: The extinction coefficient of the sulfide material of the sulfide film in the target band is greater than or equal to 0.05, and the sulfide material is one or more of antimony sulfide, germanium tellurium sulfur, germanium antimony tellurium, germanium arsenic sulfur, and germanium tellurium selenium. The target band is one of the visible light band, short-wave infrared band, medium-wave infrared band, and long-wave infrared band.

3. The laser processing method based on chalcogenide materials according to claim 2, characterized in that: The laser light source of the laser spot is a continuous laser, and the wavelength of the continuous laser is selected from any wavelength whose extinction coefficient of the sulfide material is greater than or equal to 0.

05.

4. The laser processing method based on chalcogenide materials according to claim 1, characterized in that: The processing area of ​​the sulfide film heats up under the irradiation of the laser spot, and the processing area reacts with oxygen ions in the processing environment and is oxidized when heated, and the processing environment includes one or more of air, oxygen, water and oxygen ion solution; the refractive index of the first material before oxidation and the refractive index of the second material after oxidation in the irradiated area of ​​the sulfide film are different, and the difference between the refractive index of the first material and the refractive index of the second material in the working band is not less than 0.

1.

5. The laser processing method based on chalcogenide materials according to claim 1, characterized in that: The preset processing pattern is obtained by changing the energy distribution of the laser spot and changing the scanning mode of the laser spot.

6. The laser processing method based on chalcogenide materials according to claim 1 or 5, characterized in that: The oxidation degree of the material in the laser spot processing area can be controlled in multiple stages by adjusting the spot energy, irradiation time and scanning mode.

7. The laser processing method based on chalcogenide materials according to claim 6, characterized in that: There is only a slight difference between a first film thickness of the processed area of ​​the sulfide film before laser processing and a second film thickness after laser processing, and the ratio of the second film thickness to the first film thickness is between 0.8 and 1.

2.

8. The laser processing method based on chalcogenide materials according to claim 1, characterized in that: The preset processing pattern includes one or more of a circle, an ellipse, a rectangle, a cross, a circular ring, an elliptical ring, a square ring, a negative cross pattern, a circular array, an elliptical array, a rectangular array, a cross array, a circular ring array, an elliptical ring array, a square ring array, and a negative cross pattern array.

9. The laser processing method based on chalcogenide materials according to claim 1, characterized in that: If the sulfide material of the selected sulfide film also has phase change properties, then the integrated photonic device processed by laser oxidation has programmable optical response and non-volatile properties, and the phase change material includes one or more of antimony sulfide and antimony selenide.

10. An integrated photonic device, characterized in that: The integrated photonic device is prepared by the laser processing method based on chalcogenide materials according to any one of claims 1 to 9, and the integrated photonic device preparation process does not require the introduction of additional masked or maskless exposure and etching steps.

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