Gas feeding device and vapor deposition device

Abstract

Disclosed in the present invention are a gas feeding device and a vapor deposition device. The gas feeding device comprises a plurality of horizontally-arranged gas channels, which are arranged at the top of the interior of a reaction chamber, gas inlets of all the gas channels being communicated with a gas source group, and the distance between a gas outlet of each gas channel and a susceptor in the vertical direction being different. The gas source group comprises a gallium source, a nitrogen source and a doping gas source, the gallium source and the nitrogen source being communicated with the interior of the reaction chamber by means of different gas channels, and the doping gas source being communicated with the interior of the reaction chamber by means of at least one gas channel, so as to feed a gallium-containing gas, a nitrogen-containing gas and a doping gas into the reaction chamber. The gallium-containing gas and the doping gas fed into the reaction cavity satisfy a preset equation, such that upon the start of feeding the doping gas into the reaction chamber, the vertical distance to the susceptor is relatively small, so as to increase the concentration of a doping impurity at edges of wafers, thus further ensuring the uniformity of the overall concentration of the doping impurity in the wafers.

Description

Air intake device and vapor deposition equipment Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to an air intake device and vapor deposition equipment. Background Art

[0002] Semi-insulating gallium nitride is one of the core layers in GaN high electron mobility transistor (GaN HEMT) devices, which affects the device's performance such as leakage current and reliability.

[0003] Currently, carbon sources are commonly used as doping sources in the preparation of semi-insulating GaN, achieving semi-insulation by increasing acceptor compensation. Carbon doping is generally achieved in two ways: one is through unintentional doping (intrinsic doping) through process adjustments, such as lowering the growth temperature, reducing the V / III ratio, and increasing the growth rate. This approach has the disadvantage of significantly restricting the process window; the other is to introduce a carbon source externally (external doping), which can significantly expand the process window.

[0004] In the existing gas inlet method, an external carbon-containing dopant gas enters the reaction chamber together with the gallium source through the same gas inlet channel. However, when growing semi-insulating gallium nitride on a silicon substrate, to offset the tensile stress caused by the different thermal expansion coefficients of the silicon substrate and the gallium nitride material during cooling, a certain compressive stress must be stored in the gallium nitride during epitaxial growth. This causes the wafer to be in a convex state, resulting in a lower temperature at the center of the wafer than at the edge. The carbon dopant concentration in gallium nitride decreases with increasing temperature. Therefore, the existing gas inlet method results in a higher carbon doping content in the center of the wafer than at the edge, resulting in uneven carbon doping across the wafer and affecting the yield of semi-insulating gallium nitride production. Therefore, it is necessary to adjust the dopant gas inlet method. Technical issues

[0005] The object of the present invention is to provide an air intake device and a vapor deposition device, which can reduce the vertical distance between the doping gas and the tray when entering the reaction chamber, thereby improving the uniformity of the overall doping impurity concentration of the wafer. Technical Solutions

[0006] In order to achieve the above object, the present invention is implemented through the following technical solutions:

[0007] A gas inlet device for a vapor deposition apparatus, the vapor deposition apparatus comprising a reaction chamber with a tray disposed at the bottom thereof; the gas inlet device comprising: a plurality of horizontally arranged gas channels disposed at the top of the reaction chamber; the gas inlet of each gas channel being connected to a gas source assembly, and the gas outlet of each gas channel being spaced at a different vertical distance from the tray;

[0008] The gas source group includes a gallium source, a nitrogen source, and a dopant gas source; the gallium source and the nitrogen source are connected to the interior of the reaction chamber through different gas channels, and the dopant gas source is connected to the interior of the reaction chamber through at least one gas channel to introduce gallium-containing gas, nitrogen-containing gas, and dopant gas into the reaction chamber;

[0009] The gallium-containing gas and the doping gas introduced into the reaction chamber satisfy the following formula:

[0010]

[0011] Wherein, n represents the total number of gas channels connected to the gallium-containing gas; a i represents the vertical distance between the gas outlet of the i-th gas channel connected to the gallium-containing gas and the tray; x i represents the ratio of the volume flow rate of the gallium-containing gas introduced into the i-th gas channel connected to the gallium-containing gas to the total volume flow rate of the gallium-containing gas introduced into the reaction chamber; m represents the total number of gas channels connected to the doping gas; b j y represents the vertical distance between the gas outlet of the j-th gas channel connected to the doping gas and the tray; j It represents the ratio of the volume flow of the doping gas introduced into the j-th gas channel connected to the doping gas to the total volume flow of the doping gas introduced into the reaction chamber.

[0012] Optionally, the doping gas source and the gallium source share at least one of the gas channels.

[0013] Optionally, the doping gas source and the nitrogen source share at least one of the gas channels.

[0014] Optionally, the doping gas source, the gallium source, and the nitrogen source do not share the gas channel.

[0015] Optionally, there is a gap between the top surface of the tray and the bottom surface of the air intake device.

[0016] Optionally, the gas inlet device further includes: a doping gas pipeline, connected to the doping gas source and the gap, and configured to introduce the doping gas into the reaction chamber through the gap.

[0017] Optionally, the doping gas pipeline includes a first vertical gas pipeline arranged inside the air intake device.

[0018] Optionally, the first vertical gas pipeline is arranged at a central position of the air intake device.

[0019] Optionally, the doping gas pipeline includes a second vertical gas pipeline arranged inside the tray.

[0020] Optionally, the second vertical gas pipe is arranged at the center of the tray.

[0021] Optionally, the air intake device further includes: a plurality of air supply pipes, the air inlet of each of the air supply pipes is connected to the gas source group, and the air outlet of each of the air supply pipes is connected to the air inlet of at least one of the gas channels.

[0022] Optionally, the air supply pipe is arranged in a vertical direction.

[0023] Optionally, a buffer chamber is connected to the gas path between the interconnected gas supply pipe and the gas channel to control the flow rate of the corresponding gas.

[0024] Optionally, a distribution chamber is connected to the gas path between the buffer chamber and the gas channel, and the buffer chamber and the distribution chamber are communicated with each other through a plurality of gas uniformity holes.

[0025] Optionally, the gallium-containing gas is trimethylgallium or triethylgallium, the nitrogen-containing gas is ammonia, and the doping gas contains at least one of propane or ethylene.

[0026] On the other hand, the present invention also discloses a vapor deposition device, comprising: a reaction chamber; a tray, arranged at the inner bottom of the reaction chamber, for carrying wafers; and the air intake device as described above, arranged at the inner top of the reaction chamber. Beneficial effects

[0027] Compared with the prior art, the present invention has at least one of the following advantages:

[0028] In an air intake device and vapor deposition equipment provided by the present invention, a gas channel located in a reaction chamber is arranged in a horizontal direction, a gallium source and a nitrogen source in a gas source group can be connected to the interior of the reaction chamber through different gas channels, and a doping gas source can be connected to the interior of the reaction chamber through at least one gas channel, so as to introduce gallium-containing gas, nitrogen-containing gas and doping gas into the reaction chamber; and the gallium-containing gas and doping gas introduced into the reaction chamber must meet the constraints of a preset formula, so that the vertical distance between the doping gas and the tray when just entering the reaction chamber is smaller than the vertical distance between the gallium-containing gas and the tray, so as to reduce the chance of the doping gas being transported to the center of the wafer, allowing more doping gas to remain at the edge of the wafer to participate in the doping reaction, thereby increasing the doping content at the edge of the wafer, and further ensuring the uniformity of the overall doping content of the wafer, and avoiding the problem in the prior art that the doping content in the center area of ​​the wafer is higher than the doping content in the edge area of ​​the wafer.

[0029] In the present invention, the gas channel is arranged in the horizontal direction, that is, it extends horizontally along the radial direction of the tray, so that the gallium-containing gas, nitrogen-containing gas and doping gas entering the reaction chamber through the gas channel pass through the surface of the wafer as horizontally as possible and are evenly distributed on the surface of the wafer, thereby ensuring the uniformity of the film thickness and the uniformity of the doping concentration on the wafer surface.

[0030] In the present invention, the gas outlet of each gas channel is spaced at different distances from the tray in the vertical direction, so that gallium-containing gas, nitrogen-containing gas and doping gas can be injected into the reaction chamber in layers in the vertical direction, thereby preventing the gallium-containing gas, nitrogen-containing gas and doping gas from reacting prematurely before reaching the surface of the wafer.

[0031] In the present invention, there is a gap between the top surface of the tray and the bottom surface of the air inlet device. The gap can also serve as a gas channel connected to the interior of the reaction chamber. When the doping gas is introduced into the reaction chamber through the gas channel formed by the gap, it is also necessary to meet the constraints of the preset formula to further ensure the uniformity of the overall doping concentration of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] FIG1 is a schematic structural diagram of a vapor deposition apparatus provided by one embodiment of the present invention;

[0033] 2 is a schematic structural diagram of a gas inlet device provided by one embodiment of the present invention, in which a doping gas source and a gallium source share a second gas channel and a fourth gas channel, and a doping gas source and a nitrogen source share a fifth gas channel;

[0034] 3 is a schematic structural diagram of a doping gas source and a gallium source sharing a second gas channel and a fourth gas channel in an air intake device provided by an embodiment of the present invention;

[0035] 4 is a schematic structural diagram of a gas inlet device provided by one embodiment of the present invention, in which a doping gas source and a gallium source share a fourth gas channel, and a doping gas source and a nitrogen source share a third gas channel and a fifth gas channel;

[0036] 5 is a schematic structural diagram of a gas inlet device provided by one embodiment of the present invention, in which a doping gas source and a gallium source share a fourth gas channel, and a doping gas source and a nitrogen source share a fifth gas channel;

[0037] FIG6 is a schematic structural diagram of a gas inlet device provided by one embodiment of the present invention, in which a doping gas source, a gallium source, and a nitrogen source do not share a gas channel;

[0038] FIG7 is a schematic structural diagram of an air intake device provided by an embodiment of the present invention, in which only a first vertical gas pipeline is provided;

[0039] FIG8 is a schematic structural diagram of an air intake device provided by an embodiment of the present invention, in which only a second vertical gas pipeline is provided;

[0040] FIG9 is a schematic structural diagram of an air intake device provided by an embodiment of the present invention, in which a first vertical gas pipeline and a second vertical gas pipeline are simultaneously provided. Modes for Carrying Out the Invention

[0041] The following is a further detailed description of an air intake device and a vapor deposition device proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention, so they have no technical significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0042] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0043] 1 to 9 , this embodiment provides a gas inlet device 110 for use in a vapor deposition apparatus. The vapor deposition apparatus includes a reaction chamber 100, wherein a tray 102 is disposed at the bottom of the reaction chamber 100. The tray 102 is used to support a single wafer or multiple wafers 101. The gas inlet device 110 comprises: a plurality of horizontally arranged gas channels 1101 disposed at the top of the reaction chamber 100; the gas inlet of each gas channel 1101 is connected to a gas source assembly 120 located outside the reaction chamber 100; the gas outlet of each gas channel 1101 is located above the tray 102, and the gas outlet of each gas channel 1101 is spaced at a different vertical distance from the tray 102. The gas source assembly 120 includes a gallium source 1201, a nitrogen source 1202, and a dopant gas source 1203. The gallium source 1201 stores a gallium-containing gas, the nitrogen source 1202 stores a nitrogen-containing gas, and the dopant gas source 1203 stores a dopant gas. The gallium source 1201 and the nitrogen source 1202 communicate with the interior of the reaction chamber 100 via different gas channels 1101 to prevent the gallium-containing gas and the nitrogen-containing gas from mixing and reacting within the gas channels. The dopant gas source 1203 communicates with the interior of the reaction chamber 100 via at least one of the gas channels 1101 to introduce gallium-containing gas, nitrogen-containing gas, and dopant gas into the reaction chamber 100.

[0044] Specifically, in this embodiment, the gallium-containing gas and the nitrogen-containing gas serve as process gases. That is, the gallium-containing gas and the nitrogen-containing gas introduced into the reaction chamber 100 can undergo a chemical deposition reaction under preset conditions to grow a thin film on the surface of the wafer 101. The doping gas, acting as an external dopant, can be introduced into the reaction chamber 100 along with the process gas to impart dopants to the formed thin film, thereby obtaining the desired semi-insulating device. Optionally, the gallium-containing gas is trimethylgallium or triethylgallium, the nitrogen-containing gas is ammonia, and the doping gas is propane or ethylene to achieve external carbon doping. It should be noted that because trimethylgallium and triethylgallium contain carbon, and the carbon in trimethylgallium and triethylgallium also contributes to doping, this doping method is referred to as intrinsic doping. Doping using propane or ethylene is referred to as external doping. In actual processes, the concentration of intrinsic doping is one to two orders of magnitude lower than that of external doping, making intrinsic doping negligible.

[0045] Specifically, in this embodiment, the wafers 101 can be spaced apart along the circumference of the tray 102, and during processing of the wafers 101, the tray 102 can rotate about its own axis, and the wafers 101 can also rotate about its own axis, so that the thickness of the film on the surface of the wafer 101 is relatively uniform and the doping concentration is relatively uniform. More specifically, the gas inlet device 110 can be positioned relative to the central area of ​​the tray 102 (i.e., the area not carrying wafers), and the gas channel 1101 can extend horizontally along the radial direction of the tray 102, so that the gallium-containing gas, the nitrogen-containing gas, and the doping gas entering the reaction chamber 100 through the gas channel 1101 pass through the surface of the wafer 101 as horizontally as possible and are evenly distributed on the surface of the wafer 101, further ensuring the uniformity of the film thickness and doping concentration on the surface of the wafer 101, but the present invention is not limited to this.

[0046] Specifically, in this embodiment, the gas outlets of all the gas channels 1101 are spaced apart in the vertical direction to vertically inject the gallium-containing gas, the nitrogen-containing gas, and the dopant gas into the reaction chamber 100 in layers, thereby preventing the gallium-containing gas and the nitrogen-containing gas from reacting prematurely before reaching the surface of the wafer 101. More specifically, the gallium-containing gas and the dopant gas introduced into the reaction chamber 100 satisfy the following formula:

[0047] (1)

[0048] Wherein, n represents the total number of gas channels connected to the gallium-containing gas; a irepresents the vertical distance between the gas outlet of the i-th gas channel connected to the gallium-containing gas and the tray; x i represents the ratio of the volume flow rate of the gallium-containing gas introduced into the i-th gas channel connected to the gallium-containing gas to the total volume flow rate of the gallium-containing gas introduced into the reaction chamber; m represents the total number of gas channels connected to the doping gas; b j y represents the vertical distance between the gas outlet of the j-th gas channel connected to the doping gas and the tray; j represents the ratio of the volume flow rate of the dopant gas introduced into the jth gas channel connected to the dopant gas to the total volume flow rate of the dopant gas introduced into the reaction chamber. Optionally, when measuring the vertical distance between the gas outlet of the gas channel 1101 and the tray 102, the top surface of the center region of the tray 102 (i.e., the horizontal plane formed by rotating AA in FIG1 about the tray axis) can be used as the reference plane, but the present invention is not limited to this.

[0049] In this embodiment, based on the constraint of formula (1), the gas channel 1101 that is closer to the top surface of the tray 102 in the vertical direction can be selected as much as possible to introduce the doping gas into the reaction chamber 100, so that the vertical distance between the doping gas and the tray 102 is smaller when the doping gas just enters the reaction chamber 100, thereby reducing the chance of the doping gas being transported to the center of the wafer 101 and the outside of the tray 102, allowing more of the doping gas to remain at the edge of the wafer 101 to participate in the doping reaction, thereby increasing the doping concentration at the edge of the wafer 101, and further ensuring the uniformity of the overall doping concentration of the wafer 101.

[0050] Please refer to Figures 2 to 5 at the same time. The doping gas source 1203 and the gallium source 1201 can share at least one of the gas channels 1101. In some embodiments, the doping gas source 1203 and the nitrogen source 1202 can share at least one of the gas channels 1101. In some embodiments, the doping gas source does not share the gas channel with either the gallium source or the nitrogen source, but the present invention is not limited thereto, as long as formula (1) is satisfied.

[0051] Specifically, taking the case where five gas channels 1101 are provided inside the air intake device 110 as an example, the five gas channels 1101 are respectively recorded as a first gas channel 1101a, a second gas channel 1101b, a third gas channel 1101c, a fourth gas channel 1101d and a fifth gas channel 1101e. In some embodiments, as shown in FIG2 , the first gas channel 1101a and the third gas channel 1101c are respectively connected to the nitrogen source 1202 to introduce the nitrogen-containing gas into the reaction chamber 100; the second gas channel 1101b and the fourth gas channel 1101d are both simultaneously connected to the doping gas source 1203 and the gallium source 1201 (i.e., the doping gas source 1203 and the gallium source 1201 share the second gas channel 1101b and the fourth gas channel 1101d) to introduce the gallium-containing gas and the doping gas into the reaction chamber 100; the fifth gas channel 1101e is connected to the doping gas source 1203 and the nitrogen source 1202 (i.e., the doping gas source 1203 and the nitrogen source 1202 share the fifth gas channel 1101e) to introduce the doping gas and the nitrogen-containing gas into the reaction chamber 100.

[0052] In some embodiments, as shown in Figure 3, the first gas channel 1101a is connected to the nitrogen source 1202, the second gas channel 1101b and the fourth gas channel 1101d are both connected to the doping gas source 1203 and the gallium source 1201 at the same time (that is, the doping gas source 1203 and the gallium source 1201 share the second gas channel 1101b and the fourth gas channel 1101d), and the third gas channel 1101c and the fifth gas channel 1101e are connected to the nitrogen source 1202.

[0053] In some embodiments, as shown in Figure 4, the first gas channel 1101a is connected to the nitrogen source 1202, the second gas channel 1101b is connected to the gallium source 1201, the third gas channel 1101c and the fifth gas channel 1101e are both connected to the doping gas source 1203 and the nitrogen source 1202 at the same time (that is, the doping gas source 1203 and the nitrogen source 1202 share the third gas channel 1101c and the fifth gas channel 1101e), and the fourth gas channel 1101d is connected to the gallium source 1201 and the doping gas source 1203 (that is, the doping gas source 1203 and the gallium source 1201 share the fourth gas channel 1101d).

[0054] In some embodiments, as shown in Figure 5, the first gas channel 1101a and the third gas channel 1101c are respectively connected to the nitrogen source 1202, the second gas channel 1101b is connected to the gallium source 1201, the fourth gas channel 1101d is connected to the gallium source 1201 and the doping gas source 1203 (that is, the doping gas source 1203 and the gallium source 1201 share the fourth gas channel 1101d), and the fifth gas channel 1101e is connected to the doping gas source 1203 and the nitrogen source 1202 (that is, the doping gas source 1203 and the nitrogen source 1201 share the fifth gas channel 1101e).

[0055] In some embodiments, as shown in Figure 6, the first gas channel 1101a and the third gas channel 1101c are respectively connected to the nitrogen source 1202, the second gas channel 1101b and the fourth gas channel 1101d are respectively connected to the gallium source 1201, and the fifth gas channel 1101e is connected to the doping gas source 1203. At this time, the doping gas source 2303 does not share the gas channel with the gallium source 1201 and the nitrogen source 1203.

[0056] Please refer to FIG. 1 and FIG. 7 to FIG. 9 simultaneously. A gap 130 is defined between the top surface of the tray 120 and the bottom surface of the air intake device 110 .

[0057] It is understandable that the gas inlet device 110 further includes: a doping gas pipeline, which is in communication with the doping gas source 1203 and the gap 130 , and is used to introduce the doping gas into the reaction chamber 100 through the gap 130 .

[0058] Specifically, in this embodiment, the gap 130 can also serve as a doping gas channel connected to the interior of the reaction chamber 100. When the doping gas is introduced into the reaction chamber 100 through the gas channel formed by the gap 130, the constraints of formula (1) must also be satisfied to ensure uniformity of the doping impurity concentration across the wafer. In this embodiment, since the reference plane and the top surface of the center region of the tray are located on the same horizontal plane, the vertical spacing between the gap 130 and the reference plane is zero, that is, the vertical distance between the outlet of the gas channel formed by the gap 130 and the tray is zero.

[0059] In addition, in some embodiments, as shown in Figures 7, 8 and 9, the gap 130 serves as a doping gas channel, and when the doping gas is introduced into the reaction chamber 100 through the gap 130, the gas channel 1101 located inside the gas inlet device 110 can be used only to introduce the gallium-containing gas and the nitrogen-containing gas into the reaction chamber 100, and the doping gas is all introduced into the reaction chamber 100 through the gap 130, but the present invention is not limited to this.

[0060] Specifically, as shown in Figures 7 and 9, the doping gas pipeline includes a first vertical gas pipe 1103 arranged inside the air intake device 110; and the first vertical gas pipe 1103 passes through the air intake device 110 and is connected to the doping gas source 1203 and the gap 130, so that the doping gas passes through the first vertical gas pipe 1103 and the gap 130 into the reaction chamber 100. In some embodiments, the first vertical gas pipe 1103 can be arranged at the center position of the air intake device 110 to ensure axial symmetry and uniformity of the doping gas intake, but the present invention is not limited to this.

[0061] Specifically, as shown in Figures 8 and 9, the doping gas pipeline includes a second vertical gas pipe 1104 arranged inside the tray 102; and one end of the second vertical gas pipe 1104 passes through the tray 102 and is connected to the gap 130, and the other end of the second vertical gas pipe 1104 is connected to an external doping gas source (not shown in the figure) so that the doping gas passes through the second vertical gas pipe 1104 and the gap 130 into the reaction chamber 100; in some embodiments, the second vertical gas pipe 1104 can be arranged at the center position of the tray 102 to ensure axial symmetry and uniformity of the doping gas intake, but the present invention is not limited to this.

[0062] In addition, in some embodiments, only the first vertical gas pipeline 1103 may be provided, or only the second vertical gas pipeline 1104 may be provided, or both the first vertical gas pipeline 1103 and the second vertical gas pipeline 1104 may be provided at the same time, but the present invention is not limited thereto.

[0063] Please refer to Figures 1 to 9 at the same time. The air intake device also includes: a plurality of air supply pipes 1102, the air inlet of each air supply pipe 1102 is connected to the gas source group 120, and the air outlet of each air supply pipe 1102 is connected to the air inlet of at least one of the gas channels 1101.

[0064] Specifically, in this embodiment, the number of the gas supply pipes 1102 is the same as the number of the gas channels 1101, that is, the gas supply pipes 1102 are provided in a one-to-one correspondence with the gas channels 1101. In some embodiments, the number of the gas supply pipes 1102 may be less than the number of the gas channels 1102, in which case the same gas supply pipe 1102 may be connected to multiple gas channels 1101, but the present invention is not limited thereto.

[0065] Specifically, in this embodiment, a buffer chamber (not shown in the figure) is connected to the gas path between the interconnected gas supply pipe 1102 and the gas channel 1101, that is, the gas inlet end of the gas supply pipe 1102 is connected to the gas source group 120, the gas outlet end of the gas supply pipe 1102 is connected to the gas inlet end of the buffer chamber, and the gas outlet end of the buffer chamber is connected to the gas inlet of the gas channel 1101; the high-flow rate gas in the gas supply pipe 1102 can be buffered by the buffer chamber, and the gas introduced into the buffer chamber can be preliminarily homogenized, so as to control the flow rate of the corresponding gas (the gallium-containing gas, the nitrogen-containing gas or the doping gas), but the present invention is not limited to this.

[0066] Specifically, in this embodiment, a distribution chamber (not shown) is connected to the gas path between the buffer chamber and the gas channel 1101. That is, the gas outlet of the buffer chamber is connected to the gas inlet of the distribution chamber, and the gas outlet of the distribution chamber is connected to the gas inlet of the gas channel 1101. More specifically, the buffer chamber and the distribution chamber may be connected via a plurality of uniform gas holes (not shown); and the uniform gas holes can homogenize the gas flowing from the buffer chamber into the corresponding distribution chamber, thereby ensuring uniform distribution of the gas entering the reaction chamber 100 through the gas channel 1101, thereby ensuring uniform film thickness and doping concentration on the surface of the wafer 101, but the present invention is not limited to this.

[0067] In addition, in some embodiments, the buffer chamber may be connected to the gas path between the first vertical gas pipe 1103 and the gap 130 and between the second vertical gas pipe 1104 and the gap 130, and the distribution chamber may be connected to the gas path between the buffer chamber and the gap 130, but the present invention is not limited to this.

[0068] On the other hand, in combination with Figure 1, this embodiment also provides a vapor deposition device, including: a reaction chamber 100; a tray 102, arranged at the inner bottom of the reaction chamber 100, for carrying a wafer 101; and the air intake device 110 as described above, arranged at the inner top of the reaction chamber 100.

[0069] In summary, the present embodiment provides an air intake device and a vapor deposition device, in which the gas channels located in the reaction chamber are arranged in a horizontal direction, the gallium source and the nitrogen source in the gas source group can be connected to the interior of the reaction chamber through different gas channels, and the doping gas source can be connected to the interior of the reaction chamber through at least one gas channel, so as to introduce gallium-containing gas, nitrogen-containing gas and doping gas into the reaction chamber; and the gallium-containing gas and the doping gas introduced into the reaction chamber must meet the constraints of a preset formula, so that the vertical distance between the doping gas and the tray when it just enters the reaction chamber is smaller than the vertical distance between the gallium-containing gas and the tray, so as to reduce the chance of the doping gas being transported to the center of the wafer, and allow more doping gas to remain at the edge of the wafer to participate in the doping reaction, thereby increasing the doping content at the edge of the wafer, and further ensuring the uniformity of the overall doping content of the wafer, and avoiding the problem in the prior art that the doping content in the center area of ​​the wafer is higher than the doping content in the edge area of ​​the wafer. In this embodiment, the gas channels are arranged horizontally, extending radially along the tray. This allows the gallium-containing gas, nitrogen-containing gas, and dopant gas introduced into the reaction chamber through the gas channels to pass through the wafer surface as horizontally as possible and be evenly distributed across the wafer surface, thereby ensuring uniform film thickness and dopant concentration across the wafer surface. Furthermore, the vertical spacing between the outlet of each gas channel and the tray is different, enabling the vertical injection of gallium-containing gas, nitrogen-containing gas, and dopant gas into the reaction chamber in layers, thereby preventing premature reaction between the gallium-containing gas, nitrogen-containing gas, and dopant gas before reaching the wafer surface. A gap is defined between the top surface of the tray and the bottom surface of the gas inlet device, which also serves as a gas channel connecting to the interior of the reaction chamber. When dopant gas is introduced into the reaction chamber through the gas channel formed by this gap, it must also meet the constraints of a preset formula, further ensuring uniform dopant concentration across the wafer.

[0070] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. An air intake device for a vapor deposition device, the vapor deposition device comprising a reaction chamber, wherein a tray is provided at the bottom of the reaction chamber; characterized in that: The gas inlet device comprises: a plurality of horizontally arranged gas channels, which are arranged at the inner top of the reaction chamber; the gas inlet of each gas channel is connected to the gas source group, and the gas outlet of each gas channel is at a different distance from the tray in the vertical direction; The gas source group includes a gallium source, a nitrogen source and a doping gas source; the gallium source and the nitrogen source are connected to the interior of the reaction chamber through different gas channels, and the doping gas source is connected to the interior of the reaction chamber through at least one gas channel to introduce gallium-containing gas, nitrogen-containing gas and doping gas into the reaction chamber; The gallium-containing gas and the doping gas introduced into the reaction chamber satisfy the following formula: ； Wherein, n represents the total number of gas channels connected to the gallium-containing gas; a i represents the vertical distance between the gas outlet of the i-th gas channel connected to the gallium-containing gas and the tray; x i represents the ratio of the volume flow rate of the gallium-containing gas introduced into the i-th gas channel connected to the gallium-containing gas to the total volume flow rate of the gallium-containing gas introduced into the reaction chamber; m represents the total number of gas channels connected to the doping gas; b j represents the vertical distance between the gas outlet of the j-th gas channel connected to the doping gas and the tray; y j It represents the ratio of the volume flow rate of the doping gas introduced into the j-th gas channel connected to the doping gas to the total volume flow rate of the doping gas introduced into the reaction chamber.

2. The air intake device according to claim 1, characterized in that: The doping gas source and the gallium source share at least one of the gas channels.

3. The air intake device according to claim 1, characterized in that: The doping gas source and the nitrogen source share at least one of the gas channels.

4. The air intake device according to claim 1, characterized in that: The doping gas source, the gallium source, and the nitrogen source do not share the gas channel.

5. The air intake device according to claim 1, characterized in that: A gap is formed between the top surface of the tray and the bottom surface of the air intake device.

6. The air intake device according to claim 5, characterized in that: Also includes: A doping gas pipeline is connected to the doping gas source and the gap, and is used for introducing the doping gas into the reaction chamber through the gap.

7. The air intake device according to claim 6, characterized in that: The doping gas pipeline includes a first vertical gas pipeline arranged inside the air intake device.

8. The air intake device according to claim 7, characterized in that: The first vertical gas pipeline is arranged at the center of the air intake device.

9. The air intake device according to claim 6, characterized in that: The doping gas pipeline includes a second vertical gas pipeline disposed inside the tray.

10. The air intake device according to claim 9, characterized in that: The second vertical gas pipeline is arranged at the center of the tray.

11. The air intake device according to claim 1, characterized in that: Also includes: A plurality of gas supply pipelines, the gas inlet of each gas supply pipeline is connected to the gas source group, and the gas outlet of each gas supply pipeline is connected to the gas inlet of at least one gas channel.

12. The air intake device according to claim 11, characterized in that: The air supply pipeline is arranged in a vertical direction.

13. The air intake device according to claim 11, characterized in that: A buffer chamber is connected to the gas path between the interconnected gas supply pipeline and the gas channel to control the flow rate of the corresponding gas.

14. The air intake device according to claim 13, characterized in that: A distribution chamber is connected to the gas path between the buffer chamber and the gas channel, and the buffer chamber is communicated with the distribution chamber through a plurality of gas uniformity holes.

15. The air intake device according to claim 1, characterized in that: The gallium-containing gas is trimethyl gallium or triethyl gallium, the nitrogen-containing gas is ammonia, and the doping gas contains at least one of propane or ethylene.

16. A vapor deposition device, characterized in that: include: Reaction chamber; A tray, disposed at the inner bottom of the reaction chamber, for carrying wafers; as well as The gas inlet device according to any one of claims 1 to 15 is arranged at the inner top of the reaction chamber.

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