Electronic device for capturing infrared radiation and displaying images

Abstract

The present description relates to an electronic device (100) for capturing and displaying images, comprising a plurality of pixels (PIX) formed in and on a semiconductor substrate (101), each pixel comprising: – an organic and / or quantum dot-based detection element (103) for detecting infrared radiation (105), located on the side of a first face (101F) of the semiconductor substrate (101); – an emission element (107) for emitting visible light (109), located on the side of a second face (101R) of the semiconductor substrate, opposite the first face; and – a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element, the device (100) not having a pixel (PIX) control circuit external to the pixels (PIX).

Description

DESCRIPTION Electronic device for capturing infrared radiation and displaying images This application is based on, and claims priority from, French patent application FR2314058 filed on December 13, 2023 and entitled “Electronic device for capturing infrared radiation and displaying images”, which is considered to be an integral part of this description within the limits provided by law. Technical field

[0001] This description relates generally to electronic devices, and in particular to electronic devices for capturing and displaying images. Prior art

[0002] Electronic devices capable of implementing image capture and display functions have been proposed. Such devices typically comprise an image sensor, comprising an array of image capture pixels, and an image display, comprising an array of image display pixels distinct from the image capture pixels.Depending on the application, the image capture and display pixel matrices of the device may be located on the same side of a semiconductor substrate, for example in the case of a mobile phone, a connected watch or an electronic tablet comprising a display screen integrating an image sensor intended to acquire a user's fingerprints, or be located respectively on either side of the semiconductor substrate, for example in the case of a head-mounted display, a head-up display or smart glasses comprising one or more display screens intended to be placed each facing one another. a user's eye and one or more outward-facing image sensors.

[0003] Existing electronic image capture and display devices, however, suffer from various drawbacks. In particular, in these devices, the pixels of the image sensor are typically connected to a control circuit and a reading circuit, and the pixels of the image display are connected to a control circuit different from the control and reading circuits of the pixels of the image sensor. These circuits, which are for example located at the periphery of the pixel matrices of the sensor and of the image display, implement functions for addressing the pixel matrices to which they are respectively connected, and the images acquired by the sensor are for example stored in a memory circuit before being displayed, possibly after processing. This introduces an undesirable latency time between the acquisition of an image by the sensor and the display of the corresponding image by the display.Furthermore, existing electronic image capture and display devices exhibit high complexity, size, weight, power consumption, and manufacturing cost. Summary of the invention

[0004] It would be desirable to overcome all or part of the disadvantages of existing electronic image capture and display devices. In particular, there is a need to reduce the weight, size, complexity, power consumption, manufacturing costs and / or latency of these devices.

[0005] For this, one embodiment provides an electronic image capture and display device comprising a plurality of pixels formed in and on a semiconductor substrate, each pixel comprising: - an element for detecting organic and / or quantum dot-based infrared radiation, located on the side of a first face of the semiconductor substrate; - a visible light emitting element, located on the side of a second face of the semiconductor substrate opposite the first face; and - a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element, the device being devoid of a pixel control circuit external to the pixels.

[0006] According to one embodiment, the circuit comprises: - an acquisition circuit located in and on the semiconductor substrate and adapted to provide an acquisition signal representative of an intensity of the infrared radiation received by the detection element of the pixel; and - a control circuit located in and on the semiconductor substrate and adapted to apply a control signal to the emitting element of the pixel.

[0007] According to one embodiment, the acquisition circuit and the control circuit are analog circuits.

[0008] According to one embodiment: - each detection element comprises a photodetector comprising an active layer based on at least one organic material and / or quantum dots; - each acquisition circuit comprises a comparator having an inverting input connected to a conduction electrode of the photodetector; and - each control circuit comprises an inverter having an input connected to an output of the comparator and an output connected to a gate of a MOS transistor, the MOS transistor comprising a conduction electrode connected to the emission element.

[0009] According to one embodiment, the detection elements are located opposite the emission elements.

[0010] According to one embodiment, the detection elements and the emission elements are arranged respectively in first and second matrices, the first and second matrices having substantially identical pitches.

[0011] According to one embodiment, each emission element comprises at least one light-emitting diode.

[0012] According to one embodiment, the light-emitting diode is controlled by a control signal having an average value substantially proportional to an intensity of the infrared radiation detected by the detection element.

[0013] According to one embodiment, the light-emitting diode is controlled by a control signal having pulses repeating at a frequency substantially proportional to an intensity of the infrared radiation detected by the detection element.

[0014] According to one embodiment, the device comprises as many detection elements as emission elements.

[0015] According to one embodiment, the pixels are divided into elementary groups each comprising: - at least one first pixel whose detection element is sensitive mainly in a first range of infrared radiation wavelengths and whose emission element is adapted to mainly emit visible light in a second range of wavelengths, preferably blue light; - at least one second pixel whose detection element is sensitive mainly in a third range of infrared radiation wavelengths different from the first range, and the emitting element of which is adapted to emit mostly visible light in a fourth wavelength range different from the second range, preferably green light; and - at least one third pixel whose detection element is sensitive mainly in a fifth range of infrared radiation wavelengths different from the first and third ranges, and whose emission element is adapted to emit mainly visible light in a sixth range of wavelengths different from the second and fourth ranges, preferably red light.

[0016] One embodiment provides an electronic apparatus comprising: - a power supply circuit; and - at least one device as described above.

[0017] One embodiment provides a method of manufacturing a device as described above, the method comprising a step of transferring, by molecular bonding, a structure comprising the detection elements and the circuits onto another structure comprising the emission elements. Brief description of the drawings

[0018] These and other features and advantages will be set forth in detail in the following description of particular embodiments given without limitation in relation to the attached figures, among which:

[0019] Figure 1 is a schematic and partial isometric view of an image capture and display device according to one embodiment;

[0020] Figure 2 is an equivalent electrical diagram of a pixel of the device of Figure 1 according to one embodiment;

[0021] Figure 3 is an equivalent electrical diagram of a pixel of the device of Figure 1 according to another embodiment;

[0022] Figure 4 is a timing diagram illustrating, schematically and partially, an example of operation of the pixel of Figure 3;

[0023] Figure 5 is an equivalent electrical diagram of several pixels of the device of Figure 1 according to another embodiment;

[0024] Figure 6A, Figure 6B, Figure 6C, Figure 6D, Figure 6E, Figure 6F and Figure 6G illustrate, by means of schematic and partial sectional views, structures obtained at the end of steps of a method of manufacturing the device of Figure 1 according to one embodiment;

[0025] Figure 7A and Figure 7B illustrate, by means of schematic and partial sectional views, structures obtained at the end of steps of a method of manufacturing the device of Figure 1 according to another embodiment;

[0026] Figure 8 is a schematic and partial side view of an exemplary implementation of the device of Figure 1 in an electronic device; and

[0027] Figure 9 is a schematic and partial side view of another example of implementation of the device of Figure 1 in an electronic device. Description of the embodiments

[0028] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0029] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been shown and are detailed. In particular, the various applications of the electronic image capture and display devices of the present description will not be detailed, the described embodiments being compatible with all or most of the applications likely to benefit from an electronic image capture and display device, possibly subject to adaptations within the scope of the person skilled in the art upon reading the present description.

[0030] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected by means of one or more other elements.

[0031] In the following description, when referring to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0032] Unless otherwise specified, the expressions “about”, “approximately”, “substantially”, and “in the order of” mean to within 10%, preferably to within 5%.

[0033] In the following description, the terms "insulator" and "conductor" mean, unless otherwise specified, electrically insulating and electrically conductive respectively.

[0034] The expression "transmittance of a layer" designates a ratio between an intensity of radiation leaving the layer and an intensity of radiation entering the layer. In the remainder of the description, a layer is said to be opaque to radiation when its transmittance is, for this radiation, strictly less than 40%, preferably less than or equal to 25%, more preferably less than or equal to 10%. Furthermore, a layer is said to be transparent to radiation when its transmittance is, for this radiation, greater than or equal to 40%, preferably greater than or equal to 75%, more preferably greater than or equal to 90%. The definition of the qualifiers opaque and transparent (e) above is not limited to the case of a layer, but applies more generally to any element likely to be exposed to radiation, for example a substrate, a region, a stack of several layers, etc.

[0035] In the present description, the expression "visible light" designates electromagnetic radiation whose wavelength is between 400 nm and 700 nm. Furthermore, the expression "infrared radiation" designates electromagnetic radiation whose wavelength is between 700 nm and 1 mm. In the infrared range, near infrared radiation has a wavelength between 700 nm and 1.7 pm.

[0036] Figure 1 is a schematic and partial isometric view of an image capture and display device 100 according to one embodiment.

[0037] According to this embodiment, the image capture and display device 100 comprises a plurality of pixels PIX formed in and on a semiconductor substrate 101.

[0038] Each pixel PIX of the device 100 comprises a detection element 103 of a radiation 105 and, associated with the detection element 103, an emission element 107 of a radiation 109. The detection elements 103 and emission elements 107 are respectively located on either side of the semiconductor substrate 101. More precisely, in the illustrated example, the detection elements 103 are located on the side of a face 101F of the substrate 101 and the emission elements 107 are located on the side of a face 101R of the substrate 101, opposite the face 101F. For the purpose of simplifying the drawing, each detection element 103 and each emission element 107 has been symbolized, in FIG. 1, by a parallelepiped having, in top view, a periphery of substantially square shape. This example is however not limiting, each detection element 103 or emission element 107 being able, as a variant, to have any shape, for example cylindrical.For example, the detection element 103 is of the organic type and / or based on quantum dots.

[0039] The expression "active region" of an optoelectronic component, in particular an electroluminescent component of a display sub-pixel or a photodetector, designates a region from which the majority of the electromagnetic radiation provided by the optoelectronic component is emitted or the region from which the majority of the electromagnetic radiation received by the optoelectronic component is captured. An optoelectronic component is said to be organic when the active region of the optoelectronic component is predominantly, preferably entirely, made of at least one organic material or a mixture of organic materials. An optoelectronic component is said to be quantum dot-based when the active region of the optoelectronic component includes quantum dots.

[0040] In the illustrated example, the pixels DIX of the device 100 are arranged in a matrix according to rows and columns. More precisely, in this example, the detection elements 103 are arranged in a matrix according to rows and columns. Similarly, the emission elements 107 are, in this example, arranged in a matrix according to rows and columns. In each of these matrices, the rows are for example substantially orthogonal to the columns. This example is however not limiting, the rows being able, as a variant, not to be orthogonal to the columns.

[0041] For example, the device 100 comprises as many detection elements 103 as emission elements 107.

[0042] In the example shown, the matrix of emission elements 107 has a pitch, that is to say a center-to-center distance between two adjacent emission elements 107, substantially equal to the pitch of the matrix of detection elements 103, that is to say substantially equal to a center-to-center distance between two adjacent detection elements 103. Furthermore, in this example, the emission elements 107 are located opposite the detection elements 103. In the example illustrated, the center of each emission element 107 is located substantially directly above the center of the detection element 103 located opposite. The emission elements 107 have, for example, in top view, lateral dimensions substantially equal, apart from manufacturing dispersions, to those of the detection elements 103.This example is however not limiting, the emission elements 107 being able, as a variant, to have different lateral dimensions, for example greater or lesser, than those of the detection elements 103. The dimensions. respective, for example the respective surfaces, of the detection elements 103 and emission 107 are for example chosen as a function of a desired sensitivity on the side of the detection elements 103 and / or of an intensity to be achieved on the side of the emission elements 107.

[0043] For example, the radiation 105 captured by the detection elements 103 is infrared radiation, for example near infrared radiation. Furthermore, the radiation 109 emitted by the emission elements 107 is for example visible light.

[0044] Figure 2 is an equivalent electrical diagram of a pixel PIX of the device 100 of Figure 1 according to one embodiment.

[0045] In the example shown, the detection element 103 of the pixel PIX comprises a photodetector 201 adapted to capture the radiation 105. The photodetector 201 is for example adapted to produce, under the effect of the incident radiation 105, a current Iph, also called photocurrent. The photocurrent Iph is for example substantially proportional to an intensity, or to a flux, of the radiation 105 captured by the photodetector 201. In the example illustrated, the photodetector 201 comprises a first conduction terminal, for example an anode electrode, connected to a node 203 for applying a reference potential, for example ground. The photodetector 201 further comprises, in this example, a second conduction terminal, for example a cathode electrode, connected to a circuit 205. By way of example, the photodetector 201 is a photosensitive diode, or photodiode.

[0046] In the illustrated example, the circuit 205 comprises an acquisition circuit 207, also called a conditioner or conditioning circuit. The acquisition circuit 207 is for example adapted to provide an acquisition signal representative of the intensity of the radiation 105 captured by the photodetector 201. The acquisition signal produced by the acquisition circuit 207 is for example a function of the photocurrent Iph, for example substantially proportional to the photocurrent Iph. As a variant, the acquisition signal is a function of a voltage across the terminals of the photodetector 201, for example substantially proportional to this voltage.

[0047] The acquisition circuit 207 makes it possible, for example, to amplify the photocurrent Iph and to provide a voltage for driving the emission element 107. For these purposes, the acquisition circuit 207 comprises, for example, an amplifier symbolized, in FIG. 2, by a transistor. For example, the amplifier is of the CTIA type (from the English “Capacitive Trans-Impedance Amplifier”).

[0048] In the example shown, the circuit 205 of the pixel DIX further comprises a control circuit 209, or driving circuit. The control circuit 209 is for example adapted to apply a control signal to the emission element 107. The control signal provided by the control circuit 209 is for example a function of the acquisition signal, for example substantially proportional to the acquisition signal.

[0049] In the example shown, the acquisition circuit 207 and the control circuit 209 each receive a calibration signal cal. The calibration signal cal makes it possible, for example, to compensate for manufacturing dispersions between the pixels DIX of the image capture and display device 100, for example manufacturing dispersions affecting the detection element 103 and / or the emission element 107 of the pixels DIX. In practice, the acquisition circuit 207 receives, for example, a calibration signal different from that received by the control circuit 209. The calibration signal cal has, for example, a determined value, for each pixel PIX, at the end of a calibration step subsequent to manufacturing steps of the image capture and display device 100. Alternatively, the calibration signal cal may be omitted.

[0050] In the example illustrated, the emission element 107 of the pixel PIX comprises a light-emitting diode 211 adapted to emit the radiation 109. The light-emitting diode 211 is for example more precisely adapted to emit the radiation 109 when it is traversed by a lied current, corresponding for example to the control signal applied by the control circuit 209. The lied current has for example an intensity substantially proportional to that of the photocurrent Iph, for example substantially proportional to the intensity of the radiation 105 captured by the photodetector 201. In the example illustrated in FIG. 2, the light-emitting diode 211 comprises a first conduction terminal, for example an anode electrode, connected to the circuit 205, for example to an output of the control circuit 209.The light-emitting diode 211 further comprises, in this example, a second conduction terminal, for example a cathode electrode, connected to a node 213 for applying a potential -Vk, for example a low potential. The light-emitting diode 211 is for example an organic light-emitting diode. The diode 211 is for example of the micro-LED type, that is to say that it has micrometric dimensions. In the case where the captured radiation 105 and the emitted radiation 109 are respectively infrared radiation and visible light, the light-emitting diode 211 is for example surmounted by a color converter corresponding to a range of wavelengths transmitted by a filter surmounting the associated photodetector 201.

[0051] In the case where the lied current has an intensity substantially proportional to that of the photocurrent Iph, the acquisition circuits 207 and control 209 are for example analog circuits. In this case, the circuit 205 is in particular devoid of an analog-digital converter.

[0052] Figure 3 is an equivalent electrical diagram of a pixel PIX of the device 100 of Figure 1 according to another embodiment. The equivalent electrical diagram illustrated in Figure 3 corresponds more precisely to a case in which the circuit 205 of the pixel PIX is adapted to control the emission element 107 by a pulse signal.

[0053] The diagram of Figure 3 includes elements in common with the diagram of Figure 2. These common elements will not be detailed again below. In particular, the detection 103 and emission 107 elements of the diagram of Figure 3 are for example identical to those of the diagram of Figure 2.

[0054] In the example shown, the acquisition circuit 207 of the pixel PIX comprises a comparator 301 comprising an inverting input (-) connected to a node 303 of the acquisition circuit 207, a non-inverting input (+) connected to a node 305 for applying a reference potential Vref, and an output connected to a node 307 of the acquisition circuit 207. In the example shown, the cathode of the photodetector 201 is connected to the node 303. The nodes 303 and 307 of the acquisition circuit 207 constitute, for example, respectively input and output terminals of the acquisition circuit 207. In the example shown, the nodes 303 and 307 respectively have potentials Vsn and Vo.

[0055] In the example shown, the acquisition circuit 207 further comprises a capacitive element 309, for example a capacitor, connecting the node 303 to another node 311 for applying a reference potential, for example the ground. The capacitor can be substituted or supplemented by a parasitic capacitance of the node 303. In the example illustrated, the acquisition circuit 207 further comprises a transistor 313, for example a MOS (Metal-Oxide-Semiconductor) transistor. In this example, the transistor 313 is more precisely an N-type MOS transistor (NMOS transistor). In the example shown, the transistor 313 comprises a conduction terminal, for example a source electrode, connected to the node 303, another conduction terminal, for example a drain electrode, connected to a node 315 for applying a supply potential Vdd, and a control terminal, for example a gate electrode, connected to the node 307. The potential Vdd is for example strictly greater than the potential Vref.

[0056] In the illustrated example, the control circuit 209 comprises an inverter 317 and a transistor 319. The inverter 317 comprises for example an input connected to the node 307 of the acquisition circuit 207 and an output connected to a control terminal, for example a gate electrode, of the transistor 319. The transistor 319 is for example more precisely a P-type MOS transistor (PMOS transistor). In the example shown, the PMOS transistor 319 comprises a conduction terminal, for example a drain electrode, connected to the anode of the light-emitting diode 211 and another conduction terminal, for example a source electrode, connected to a node 321 for applying a supply potential Va.

[0057] For example, the light-emitting diode 211 is controlled by a control signal having an average value substantially proportional to the intensity of the radiation 105.

[0058] Figure 4 is a timing diagram illustrating, schematically and partially, an example of operation of the pixel PIX of figure 3. The timing diagram of figure 4 includes curves 401 and 403 illustrating an example of evolution, as a function of time (t), of the potentials Vsn and Vo, respectively.

[0059] Between a time t0 and a time t1, subsequent to the time t0, the photodetector 201 is exposed to the radiation 105 and produces the photocurrent Iph. During this period, the photocurrent Iph is integrated by the capacitive element 309. The charges photogenerated by the photodetector 201 accumulate at the node 303, thus causing a drop in the potential Vsn. In the example illustrated, the potential Vsn of the node 303 has, between the times t0 and t1, a value between that of the potential Vdd and that of the potential Vref. Between the times t0 and t1, the potential Vo of the node 307 connected to the output of the comparator 301 is for example at a low level.

[0060] At time t1, the potential Vsn reaches a value substantially equal to that of the reference potential Vref. This causes a switching of the output of the comparator 301, thus a transition of the potential Vo from the low level to a high level. The transistor 313 is then controlled to the on state, which has the effect of connecting the node 303 to the node 315. The photogenerated charges accumulated at the node 303 between times t0 and t1 are thus evacuated to the node 315. This tends to bring the potential Vsn back to a value substantially equal to that of the supply potential Vdd.

[0061] At a time t2, after time tl, the potential Vsn becomes higher than the potential Vref. This causes the output of comparator 301 to switch, causing a transition of the potential Vo from the high level to the low level. Curve 403 thus illustrates a pulse of the potential Vo between times tl and t2.

[0062] Between time t2 and a time t3, after time t2, curve 403 illustrates several other pulses of the potential Vo similar to that present between the times t1 and t2. These pulses result, as explained above, from successive charges and discharges of the capacitive element 309 when the photodetector 201 is subjected to the radiation 105 and produces the photocurrent Iph. The pulses that the curve 403 comprises between the times t0 and t3 are repeated for example periodically, for example at a frequency fh.

[0063] Between an instant t4, subsequent to instant t3, and an instant t5, subsequent to instant t4, curve 403 illustrates still other impulses of the potential Vo, for example analogous to the impulses present between instants t0 and t3.

[0064] The pulses of the potential Vo between the times t4 and t5 differ, for example, from the pulses of the potential Vo between the times t0 and t3 in that they are repeated periodically at a frequency fl strictly lower than the frequency fh. This comes, for example, from the fact that the photodetector 201 produces, during an LF phase between the times t4 and t5, a weaker photocurrent Iph, for example resulting from a drop in the intensity of the radiation 105, than during another HF phase between the times t0 and t3.

[0065] In the example shown, the frequencies fh and fl are representative of the photocurrent Iph, for example substantially proportional to the photocurrent Iph. The frequencies fh and fl are for example substantially proportional to the intensity, or to the flux, of the radiation 105 captured by the photodetector 201. The light-emitting diode 211 is for example thus controlled by a periodic signal of frequency substantially proportional to the intensity of the radiation 105 captured by the photodetector 201.

[0066] For example, the sensitivity of the pixel PIX is adjusted by modifying the value of the reference potential Vref, which limits the extent of the variation range of the potential Vsn. In the example shown, for the same radiation intensity value 105, the closer the value of the potential Vref is to that of the potential Vdd, the higher the variation frequency of the potential Vo. Conversely, the further the value of the potential Vref is from that of the potential Vdd, the lower the variation frequency of the potential Vo.

[0067] The embodiments of the circuit 205 of the pixel PIX are not limited to the examples of the detection 207 and control 209 circuits shown, and the person skilled in the art is capable, based on the indications of the present description, of providing detection and control circuits different from those set out in relation to FIGS. 3 and 4. For example, a counter or a frequency divider may be provided in the control circuit 209 in order to allow an adjustment of the variation frequency of the potential Vo for each pixel PIX independently of the other pixels PIX. The adjustment is then for example carried out in the factory, for example at the end of manufacturing steps of the device 100, and for example implements a step of storing calibration values ​​in memory circuits of the device 100, for example memory circuits of the ROM (Read-Only Memory) or flash type.This avoids the presence of addressing circuits in the device 100. Other types of circuits, for example logarithmic response circuits, could also be provided.

[0068] In the examples set out above, the image capture and display device 100 is devoid of addressing circuits for the matrices of detection elements 103 and transmission 107. The device 100 is furthermore devoid of circuits and components for storing, or memorizing, images acquired by the detection elements 103 or images to be displayed by the transmission elements 107.

[0069] Furthermore, each pixel PIX of the device 100 has autonomous operation, insofar as each pixel PIX does not receive any external control signal. The device 100 is in particular devoid of a circuit for controlling the pixels PIX external to the pixels PIX. In the example shown, each pixel PIX of the device 100 receives only one or more power supply signals, for example signals having a substantially constant voltage value.

[0070] An advantage of the device 100 is that it has lower weight, size, complexity, power consumption, manufacturing costs and / or latency than existing image capture and display devices.

[0071] Figure 5 is an equivalent electrical diagram of several pixels of the device 100 of Figure 1 according to another embodiment. Figure 5 is more precisely an equivalent electrical diagram of three pixels PIX-1, PIX-2 and PIX-3 of the device 100.

[0072] The diagram in Figure 5 includes elements in common with the diagram in Figure 2. These common elements will not be detailed again below.

[0073] The diagram of Figure 5 differs from the diagram of Figure 2 in that, in the diagram of Figure 5, the pixels PIX-1, PIX-2 and PIX-3 are respectively adapted to capture infrared radiation 105-1, 105-2 and 105-3 in different wavelength ranges. Furthermore, in the example shown, the pixels PIX-1, PIX-2 and PIX-3 are adapted to emit visible light 109-1, 109-2 and 109-3 in different wavelength ranges. This corresponds for example to a case in which the device 100 is capable of capturing and displaying multispectral images. By way of example, the device 100 in this case comprises elementary groups of pixels each comprising at least one pixel PIX-1, at least one pixel PIX-2 and at least one pixel PIX-3, for example exactly one pixel PIX-1, two pixels PIX-2 and one pixel PIX-3.

[0074] In a manner similar to the pixel PIX described above in relation to FIG. 2, each pixel PIX-1, PIX-2, PIX-3 of FIG. 5 comprises a detection element 103-1, 103-2, 103-3 comprising an infrared photodetector 201-1, 201-2, 201-3 adapted to capture mainly the radiation 105-1, 105-2, 105-3. Each infrared photodetector 201-1, 201-2, 201-3 is for example adapted to produce, under the effect of the incident infrared radiation 105-1, 105-2, 105-3, a photocurrent Iphl, Iph2, Iph3 substantially proportional to an intensity of the infrared radiation 105-1, 105-2, 105-3. In the illustrated example, each infrared photodetector 201-1, 201-2, 201-3 comprises a first conduction terminal, for example an anode electrode, connected to the node 203, and a second conduction terminal, for example a cathode electrode, connected to a circuit 205. By way of example, the infrared photodetectors 201-1, 201-2, 201-3 are photosensitive diodes, or photodiodes.

[0075] Each pixel PIX-1, PIX-2, PIX-3 comprises for example the circuit 205 comprising the acquisition circuit 207 and the control circuit 209. Although this has not been detailed in figure 5 in order not to overload the drawing, the acquisition circuit 207 and the control circuit 209 of the circuit 205 of each pixel PIX-1, PIX-2, PIX-3 can receive the calibration signal cal.

[0076] In the illustrated example, each pixel PIX-1, PIX-2, PIX-3 further comprises an emission element 107-1, 107-2, 107-3 comprising a light-emitting diode 211-1, 211-2, 211-3 adapted to emit visible light 109-1, 109-2, 109-3. Each light-emitting diode 211-1, 211-2, 211-3 is for example more precisely adapted to emit radiation 109-1, 109-2, 109-3 when it is traversed by a current Iledl, Iled2, Iled3, corresponding for example to the control signal applied by the control circuit 209. The current Iledl, Iled2, Iled3 has for example an intensity substantially proportional to that of the photocurrent Iphl, Iph2, Iph3, for example substantially proportional to the intensity of the infrared radiation 105-1, 105-2, 105-3 captured by the photodetector 201-1, 201-2, 201-3.In the illustrated example, each light-emitting diode 211-1, 211-2, 211-3 comprises a first conduction terminal, for example an anode electrode, connected to the circuit 205, for example to an output of the control circuit 209. Each light-emitting diode 211-1, 211-2, 211-3 further comprises, in this example, a second conduction terminal, for example a cathode electrode, connected to the node 213. The light-emitting diodes 211-1, 211-2 and 211-3 are for example organic light-emitting diodes. The diodes 211-1, 211-2 and 211-3 are for example of the micro-LED type.

[0077] Figure 6A, Figure 6B, Figure 6C, Figure 6D, Figure 6E, Figure 6F and Figure 6G illustrate, by means of schematic and partial sectional views, structures obtained at the end of steps of a method of manufacturing the device 100 of Figure 1 according to one embodiment. The method of Figures 6A to 6G corresponds for example more precisely to a case in which the device 100 comprises the pixels PIX of Figure 2, all the pixels PIX of the device 100 being for example adapted to capture a infrared radiation 105 in the same first wavelength range and to emit visible light 109 in the same second wavelength range, apart from manufacturing dispersions.

[0078] Figure 6A illustrates more precisely a structure obtained at the end of a step of forming an active stack of light-emitting diodes 701, or active stack of LEDs, on the side of a face 703T of a substrate 703 (the upper face of the substrate 703, in the orientation of Figure 6A). The substrate 703 is for example transparent to the radiation 109 emitted by the light-emitting diodes 211, for example transparent to visible light. For example, the substrate 703 is made of corundum (“sapphire” in English). As a variant, for example in a case where the substrate 703 is entirely eliminated during a subsequent step, the substrate 703 may be made of a material opaque to the radiation 109 emitted by the light-emitting diodes 211, for example silicon.

[0079] In the example shown, a semiconductor layer 705 doped with a first conductivity type, for example the N type, covers the face 703T of the substrate 703. The semiconductor layer 705 is for example more precisely located on and in contact with the face 703T.

[0080] In the example shown, the semiconductor layer 705 is coated with an active layer 707. The active layer 707 is, in this example, located on and in contact with a face of the semiconductor layer 705 opposite the substrate 703 (the upper face of the layer 705, in the orientation of FIG. 6A). For example, the layer 707 comprises quantum dots or wells.

[0081] In the illustrated example, the active layer 707 is coated with another semiconductor layer 709. The semiconductor layer 709 is, in this example, located on and in contact with a face of the active layer 707 opposite the substrate 703 (the upper face of the layer 707, in the orientation of FIG. 6A). The semiconductor layer 709 is for example doped with a second type of conductivity opposite to the first type of conductivity. In this example, the semiconductor layer 709 is of type P.

[0082] In the illustrated example, the semiconductor layer 705, the active layer 707 and the semiconductor layer 709 form the light-emitting diode stack 701.

[0083] For example, the semiconductor layer 705, the active layer 707 and the semiconductor layer 709 are successively formed by epitaxial growth from the face 703T of the substrate 703.

[0084] Figure 6B illustrates more precisely a structure obtained at the end of a step of forming the light-emitting diodes 211 from the structure described above in relation to Figure 6A.

[0085] In the illustrated example, conduction electrodes 711 of the light-emitting diodes 211 are formed on the side of the face 703T of the substrate 703. The conduction electrodes 711 are, for example, more precisely anode electrodes of the light-emitting diodes 211. In the example shown, the conduction electrodes 711 cover a face of the active stack of light-emitting diodes 701 opposite the substrate 703 (the upper face of the stack 701, in the orientation of FIG. 6B). The conduction electrodes 711 are, for example, located on and in contact with a face of the semiconductor layer 709 opposite the substrate 703 (the upper face of the layer 709, in the orientation of FIG. 6B). The conduction electrodes 711 have, for example, in top view, any shape, for example rectangular, oval, square, circular, etc. For example, the electrodes of conduction 711 are made of a conductive material, for example a metal or a metal alloy.

[0086] Furthermore, during this step, peripheral isolation trenches 713 are formed in the thickness of the active stack of light-emitting diodes 701. In the example shown, each peripheral isolation trench 713 extends vertically in the thickness of the active stack of light-emitting diodes 701, from the face of the semiconductor layer 709 opposite the substrate 703 and passes through the semiconductor layer 709 and the active layer 707. In this example, each peripheral isolation trench 713 is interrupted in the thickness of the semiconductor layer 705, that is to say that the peripheral isolation trenches 713 do not open onto the face 703T of the substrate 703.

[0087] In the illustrated example, each peripheral isolation trench 713 has an annular shape surrounding, or bordering, a portion of the active layer 707 corresponding to an active region of the light-emitting diode 211. Each peripheral isolation trench 713 further surrounds the conduction electrode 711 of the light-emitting diode 211.

[0088] The peripheral insulation trenches 713 form, for example, in top view, a grid, each box of which laterally delimits a light-emitting diode 211.

[0089] For example, each peripheral insulation trench 713 comprises a conductive region 715 whose side walls, or flanks, are coated with an insulating layer 717, the insulating layer 717 being for example located on and in contact with the flanks of the conductive region 715.

[0090] Furthermore, at least one connection element 719 (a single connection element 719, in the example shown) of a common conduction electrode, for example a cathode electrode, of the light-emitting diodes 211 is formed during this step. For example, each connection element 719 comprises a conductive region 721 whose side walls, or flanks, are coated with an insulating layer 723, the insulating layer 723 being for example located on and in contact with the flanks of the conductive region 721.

[0091] Figure 6C illustrates more precisely a structure obtained at the end of a subsequent step of forming, on the side of the face 703T of the substrate 703, contact recovery elements 725.

[0092] In the example shown, each contact recovery element 725 is located on and in contact with one of the conduction electrodes 711, or on and in contact with the conductive region 721 of the contact recovery element 719. In this example, insulating regions 727 extend laterally between the contact recovery elements 725. In the example shown, the contact recovery elements 725 are flush with the upper face of the insulating regions 727.

[0093] For example, the contact recovery elements 725 and the insulating regions 727 are produced by implementing a damascene technique.

[0094] Figure 6D illustrates more precisely a structure obtained at the end of a step of forming the circuits 205 of the PIX pixels of the device 100. The step described in relation to Figure 6D can be carried out indifferently before, during or after the steps previously described in relation to Figures 6A to 6C.

[0095] In the example shown, the structure comprises a support substrate 751. For example, the support substrate 751 is a wafer or piece of wafer made of a semiconductor material, for example silicon.

[0096] The support substrate 751 is for example coated, on one of its faces, with an insulating layer 753. In the example shown, the insulating layer 753 is located on and in contact with a face 751T of the support substrate 751 (the upper face of the substrate 751, in the orientation of FIG. 6D). For example, the insulating layer 753 is made of an oxide, for example silicon oxide.

[0097] The insulating layer 753 is for example coated with a semiconductor layer 755, for example a silicon layer. In the example shown, the semiconductor layer 755 is located on and in contact with a face of the insulating layer 753 opposite the support substrate 751.

[0098] For example, the support substrate 751, the insulating layer 753 and the semiconductor layer 755 are part of a SOI (Silicon On Insulator) type substrate. In this case, the insulating layer 753 corresponds to the buried oxide (BOX) layer of the SOI substrate.

[0099] In this example, the circuits 205 are located on the side of the face 751T of the semiconductor substrate 751. For example, the circuits 205 are formed in and on the semiconductor layer 755.

[0100] Although this has not been detailed in figure 6D in order not to overload the drawing, the structure further comprises for example an interconnection stack or network located on the semiconductor layer 755. The interconnection stack then comprises for example a stack of conductive layers, for example metal layers or metallization levels, and alternating insulating layers. The interconnect stack comprises, for example, conductive tracks formed in the conductive layers and conductive vias, for example, metal vias, interconnecting conductive tracks located in different conductive layers.

[0101] In the example shown, only a conductive layer 759 of the interconnect stack furthest from the support substrate 751, called the last metallization level, has been symbolized by hatched rectangles in FIG. 6D. In this example, the last metallization level is formed in an insulating layer 757 of the interconnect stack.

[0102] The semiconductor layer 755 of the structure illustrated in FIG. 6D corresponds for example to the semiconductor substrate 101 of the device 100 of FIG. 1.

[0103] Although Figure 6D illustrates an example in which the circuits 205 are formed in and on an SOI-type substrate, this example is not limiting. Alternatively, the circuits 205 may be formed in and on a bulk semiconductor substrate, for example, the same or similar to the support substrate 751 of Figure 6D.

[0104] Figure 6E illustrates more precisely a structure obtained at the end of a subsequent step of transferring the structure previously described in relation to Figure 6D onto the structure previously described in relation to Figure 6C.

[0105] For example, the structure previously described in relation to Figure 6D is turned over with respect to the orientation of Figure 6D and then brought into contact, by the faces of the insulating layer 757 and the conductive layer 759 opposite the support substrate 751 (the lower faces layers 757 and 759, in the orientation of FIG. 6E), with the faces of the contact recovery elements 725 and the insulating regions 727 opposite the substrate 703 (the upper faces of the contact recovery elements 725 and the insulating regions 727, in the orientation of FIG. 6E). During this step, the structure comprising the substrate 703 and the active stack of light-emitting diodes 701 is fixed to the interconnection stack of which the insulating layer 757 and the conductive layer 759 are part.

[0106] For example, the attachment is achieved by molecular bonding between the two surfaces in contact. Molecular bonding is, for example, more precisely of the hybrid type, each surface comprising conductive elements, for example metallic, and insulating elements, for example oxide.

[0107] The support substrate 751 is then, for example, removed. The support substrate 751 is, for example, completely removed, for example by grinding the side of the face 703T of the substrate 703. Using an SOI type substrate has the advantage of facilitating the removal of the support substrate 751 during this step, for example by allowing a stop on the insulating layer 753.

[0108] Figure 6F illustrates more precisely a structure obtained at the end of a subsequent step of producing conductive vias 761 and contact recovery elements 763.

[0109] In the example shown, the conductive vias 761 extend vertically, from a face of the insulating layer 753 opposite the substrate 703 (the upper face of the layer 753, in the orientation of FIG. 6F), through the insulating layer 753 and penetrate into the thickness of the semiconductor layer 755. Although this has not been detailed in FIG. 6F so as not to overload the drawing, the conductive vias 761 are for example connected to the circuits 205.

[0110] In the example shown, each contact recovery element 763 is located on and in contact with one of the conductive vias 761. In the example shown, at least one of the vias 761 is not coated with one of the contact recovery elements 763.

[0111] Figure 6G illustrates more precisely a structure obtained at the end of a subsequent step of depositing an active layer 771 on the structure previously described in relation to Figure 6F.

[0112] For example, the active layer 771 comprises quantum dots and / or at least one organic material. The active layer 771 is for example deposited on the entire upper face of the structure. In the example illustrated, the active layer 771 is located on and in contact with the side faces and the upper faces of the contact recovery elements 763, as well as on and in contact with parts of the upper face of the insulating layer 753 not coated with the contact recovery elements 763. For example, the active layer 771 is formed by spin-coating. In the example shown, portions of the active layer 771 are then removed directly above the conductive via(s) 761 not coated with one of the contact recovery elements 763.

[0113] Furthermore, during this step, a conductive layer 773 is deposited on the side of the upper face of the structure. The conductive layer 773 constitutes for example an upper electrode common to all the photodetectors 201 of the device 100. In the example shown, the conductive layer 773 is located on and in contact with the uncoated conductive via(s) 761 of one of the elements of contact recovery 763. In this example, the conductive layer 773 is further located on and in contact with the side faces and the upper face of the active layer 771. The conductive layer 773 is transparent to the radiation 105 captured by the photodetectors 201. By way of example, the conductive layer 773 is made of a metal or a metal oxide, for example indium-tin oxide (ITO).

[0114] Furthermore, during this step, lenses 775 are formed directly above each photodetector 201. In the example shown, the lenses 775 are located on and in contact with the face of the conductive layer 773 opposite the transparent substrate 703 (the upper face of the layer 773, in the orientation of FIG. 6G).

[0115] The method described above in relation to Figures 6A to 6G can be used to produce a monolithic device 100, for example a micro-screen, combining an infrared optical capture function and visible image display. As a variant, the method can be used to produce larger devices. Such a device can comprise a plurality of elementary chips (“smart pixels”) arranged, for example in a matrix arrangement, on the same transfer substrate. The elementary chips are mounted integral with the transfer substrate and connected to electrical connection elements of the transfer substrate for their power supply. In this case, each chip comprises for example a photodetector 201, a light-emitting diode 211, and at least one of the circuits 205. Each chip corresponds for example to a macro-pixel of the device.The implementation of such a method is within the reach of the person skilled in the art based on the indications of the present description, and comprises for example a step of cutting, or individualization, of the. elementary chips fixed on a temporary support substrate followed by steps of transferring the elementary chips onto the transfer substrate, the pitch of the elementary chips on the transfer substrate corresponding to an integer multiple strictly greater than 1 of the pitch of the elementary chips on the temporary support substrate.

[0116] Figure 7A and Figure 7B illustrate, by means of schematic and partial sectional views, structures obtained at the end of steps of a method of manufacturing the device 100 of Figure 1 according to another embodiment. The method of Figures 7A and 7B corresponds for example more precisely to a case in which the device 100 comprises the pixels PIX-1, PIX-2 and PIX-3 of Figure 5.

[0117] Figure 7A illustrates more precisely a structure obtained at the end of a step of depositing a stack 901 of active layers 903, 905 and 907 on the side of the upper face of the structure of Figure 6F.

[0118] In the illustrated example, the active layer 903 is located on and in contact with the side faces and the upper faces of the contact recovery elements 763, as well as on and in contact with parts of the upper face of the insulating layer 753 not coated with the contact recovery elements 763. In this example, the active layer 905 is located on and in contact with the active layer 903, and the active layer 907 is located on and in contact with the active layer 905. The active layers 903, 905 and 907 are for example analogous to the layer 771 previously described in relation to FIG. 6G.

[0119] Each active layer 903, 905, 907 comprises for example quantum dots and / or at least one organic material. Each active layer 903, 905, 907 differs for example from the other active layers of the stack 901 by the size of the quantum dots that it comprises. The layer active layer 905 comprises for example quantum dots having an average size greater than the average size of the quantum dots of the active layer 903, and the active layer 907 comprises for example quantum dots having an average size greater than the average size of the quantum dots of the active layer 905. In this case, the active layer 907 absorbs mainly infrared radiation in a range of wavelengths greater than those absorbed by the active layer 905, and the layer 903 absorbs mainly infrared radiation in a range of wavelengths shorter than those absorbed by the active layer 905. By way of example, the active layers 903, 905 and 907 are formed by spin coating. In the example shown, portions of the stack 901 are then removed directly above the conductive via(s) 761 not coated with one of the contact recovery elements 763.

[0120] Furthermore, during this step, the conductive layer 773 is deposited on the side of the upper face of the structure. In the example shown, the conductive layer 773 is located on and in contact with the uncoated conductive via(s) 761 of one of the contact recovery elements 763. In this example, the conductive layer 773 is further located on and in contact with the lateral faces and the upper face of the stack 901.

[0121] Figure 7B illustrates more precisely a structure obtained at the end of a subsequent step of forming filters 911-1, 911-2 and 911-3 and lenses 775 directly above the photodetectors 201-1, 201-2 and 201-3.

[0122] In the example shown, the filters 911-1, 911-2 and 911-3 are located on and in contact with the upper face of the conductive layer 773. Each filter 911-1, 911-2, 911-3 has, for example, in top view, a shape and lateral dimensions substantially identical to those of the photodetector 201-1, 201-2, 201-3 underlying. The filters 911-1, 911-2 and 911-3 are for example transparent to infrared radiation 105-1, 105-2 and 105-3, respectively, and opaque to other radiation.

[0123] In the illustrated example, the lenses 775 are located on and in contact with the upper face of the underlying filter 911-1, 911-2 or 911-3. The lenses 775 make it possible, for example, to focus the radiation 105-1, 105-2 or 105-3 in the stack 901 of active layers 903, 905 and 905 of the underlying photodetector 201-1, 201-2, 201-3.

[0124] Furthermore, during this step, a layer of glue 921 is deposited on the side of the upper face of the structure and a substrate 923 is glued onto the lenses 775.

[0125] In the example shown, the layer of glue 921 is flush with the upper face of the lenses 775.

[0126] In the illustrated example, the substrate 923 covers the upper face of the adhesive layer 921. The substrate 923 is transparent to the radiation 105-1, 105-2 and 105-3 captured by the photodetectors 201-1, 201-2 and 201-3, for example transparent to infrared radiation. For example, the substrate 923 is made of glass.

[0127] Furthermore, during this step, the substrate 703 is completely removed and color converters 931-2 and 931-3 are for example formed directly above the light-emitting diodes 211-2 and 211-3. This corresponds for example to a case in which the light-emitting diodes 211-1, 211-2 and 211-3 emit predominantly blue light, the color converters 931-2 and 931-3 then being for example adapted to convert blue light into green light and red light, respectively.

[0128] Figure 8 is a schematic and partial side view of an exemplary implementation of the device 100 of Figure 1 in an electronic device 1000. For example, the device 1000 is a pair of connected glasses or a video headset intended to be placed in front of a user's eyes, for example an augmented reality or mixed reality headset or glasses.

[0129] Although a single device 100 placed opposite a single eye 1001 has been symbolized in FIG. 8, the electronic device 1000 may of course comprise another device 100 placed opposite the other eye of the user. In the illustrated example, the majority of the radiation, for example visible light, reaching the eye 1001 comes from the device 100.

[0130] In the example shown, the electronic device 1000 comprises, in addition to the image capture and display device 100, a power supply circuit 1003 and focusing elements 1005, for example two convex lenses, located on either side of the device 100. By way of example, the power supply circuit 1003 comprises a battery.

[0131] In the example illustrated, the focusing element 1005 interposed between the device 100 and the eye 1001 is adapted to focus, on the eye 1001, the radiation 109 produced by the emission elements 107. Furthermore, in this example, the focusing element 1005 located between the device 100 and the exterior is adapted to focus the incident radiation 105 on the detection elements 103.

[0132] The electronic device 1000 is for example devoid of addressing circuits and / or analog-to-digital converters.

[0133] Figure 9 is a schematic and partial side view of another example of implementation of the device 100 of Figure 1 in an electronic device 1100. For example, the device 1100 is a pair of glasses assistance to visually impaired persons, a pair of glasses to assist a driver of a motor vehicle or a head-up display device, for example integrated into a motor vehicle such as a car, a truck, etc.

[0134] The electronic device 1100 is for example adapted to superimpose, on an image of a scene seen by the eye 1001, an image produced by the device 100, for example an image of a contour or an intensified image of an object of the scene. In the case of an intensified image, the device 100 further comprises for example an image processing circuit adapted to implement this function. By way of example, the device 1100 is used in image intensification applications, or brightness amplification, or vision applications in dimly lit environments, for example night vision applications.

[0135] The electronic device 1100 of Figure 9 comprises elements in common with the electronic device 1000 of Figure 8. These common elements will not be detailed again below.

[0136] The electronic apparatus 1100 of Figure 9 differs from the electronic apparatus 1000 of Figure 8 in that, in the apparatus 1100, the device 100 is not placed facing the eye 1001. In the illustrated example, the majority of the radiation, for example visible light, reaching the eye 1001 comes from the scene and the majority of the incident radiation 105 reaches the eye 1001 without being captured by the device 100.

[0137] In the illustrated example, the electronic device 1100 comprises an optical waveguide 1101 comprising an input face arranged opposite the device 100, for example opposite the emission elements 107, and an output face arranged opposite the eye 1001. In this example, the optical waveguide 1101 is adapted to transmit, in direction of the eye 1001, the radiation 109 emitted by the device 100.

[0138] Although this has not been detailed, the person skilled in the art is able, from the indications of the present description, to plan to integrate, in the apparatus 1000 or 1100, one or more devices 100 comprising pixels of the PIX pixel type, allowing capture and display of monochrome images, or of the PIX-1, PIX-2 and PIX-3 pixel type allowing capture and display of multispectral images.

[0139] An advantage of integrating one or more devices 100 into the apparatus 1000 or 1100 is that this allows these apparatuses to have a lower weight, size, complexity, energy consumption, manufacturing costs and / or latency time than similar apparatuses integrating image capture and display devices comprising reading and control circuits implementing addressing functions of the sensor and the display to which they are connected, and in which the images acquired by the sensor are for example stored in a memory circuit before being displayed, possibly after processing.

[0140] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will occur to those skilled in the art. In particular, although the described embodiments take as an example a case in which the arrays of sensing elements 103 and display elements 107 have a substantially identical pitch, those skilled in the art are able to predict, from the indications of the present description, that the array of display elements 107 of the device 100 has a different pitch, for example greater, than that of the array of detection elements 103.

[0141] Furthermore, the embodiment of the pixel PIX previously described in relation to figure 3 can be adapted, from the indications of the present description, to the production of the pixels PIX-1, PIX-2 and PIX-3 of the embodiment of figure 5.

[0142] Finally, the practical implementation of the described embodiments and variants is within the reach of the person skilled in the art from the functional indications given above. In particular, the described embodiments are not limited to the particular examples of materials and dimensions mentioned in the present description.

Claims

CLAIMS 1. Electronic device (100) for capturing and displaying images comprising a plurality of pixels (FIX; PIX-1, PIX-2, PIX-3) formed in and on a semiconductor substrate (101; 755), each pixel comprising: - a detection element (103; 103-1, 103-2, 103-3) of organic and / or quantum dot-based infrared radiation (105; 105-1, 105-2, 105-3), located on the side of a first face (101F) of the semiconductor substrate (101); - an emitting element (107; 107-1, 107-2, 107-3) of visible light (109; 109-1, 109-2, 109-3), located on the side of a second face (101R) of the semiconductor substrate opposite the first face; and - a circuit (205) located in and on the semiconductor substrate and connecting the detection element to the emission element, the device (100) being devoid of a pixel control circuit (PIX) external to the pixels (PIX).

2. Device (100) according to claim 1, wherein the circuit (205) comprises: - an acquisition circuit (207) located in and on the semiconductor substrate (101; 755) and adapted to provide an acquisition signal representative of an intensity of the infrared radiation (105; 105-1, 105-2, 105-3) received by the detection element (103; 103-1, 103-2, 103-3) of the pixel (PIX; PIX-1, PIX-2, PIX-3); and - a control circuit (209) located in and on the semiconductor substrate and adapted to apply a control signal to the emission element (107; 107-1, 107-2, 107-3) of the pixel.

3. Device (100) according to claim 2, wherein the acquisition circuit (207) and the control circuit (209) are analog circuits.

4. Device (100) according to claim 2, in which: - each detection element (103) comprises a photodetector (201) comprising an active layer based on at least one organic material and / or quantum dots; - each acquisition circuit (207) comprises a comparator (301) having an inverting input connected to a conduction electrode of the photodetector; and - each control circuit (209) comprises an inverter (317) having an input connected to an output of the comparator and an output connected to a gate of a MOS transistor (319), the MOS transistor comprising a conduction electrode connected to the emission element (107).

5. Device (100) according to any one of the claims 1 to 4, in which the detection elements (103; 103-1, 103-2, 103-3) are located opposite the emission elements (107; 107-1, 107-2, 107-3).

6. Device (100) according to any one of claims 1 to 5, wherein the detection elements (103; 103-1, 103-2, 103-3) and the emission elements (107; 107-1, 107-2, 107-3) are arranged respectively in first and second matrices, the first and second matrices having substantially identical pitches.

7. Device (100) according to any one of claims 1 to 6, wherein each emitting element (107; 107-1, 107-2, 107-3) comprises at least one light-emitting diode (211; 211-1, 211-2, 211-3).

8. Device (100) according to claim 7, wherein the light-emitting diode (211; 211-1, 211-2, 211-3) is controlled by a control signal having an average value substantially proportional to an intensity of the infrared radiation (105; 105-1, 105-2, 105-3) detected by the detection element (103; 103-1, 103-2, 103-3).

9. Device (100) according to claim 7, wherein the light-emitting diode (211; 211-1, 211-2, 211-3) is controlled by a control signal having pulses repeating at a frequency substantially proportional to an intensity of the infrared radiation (105; 105-1, 105-2, 105-3) detected by the detection element (103; 103-1, 103-2, 103-3).

10. Device (100) according to any one of claims 1 to 9, comprising as many detection elements (103; 103-1, 103-2, 103-3) as emission elements (107; 107-1, 107-2, 107-3).

11. Device (100) according to any one of claims 1 to 10, in which the pixels (PIX-1, PIX-2, PIX-3) are distributed into elementary groups each comprising: - at least one first pixel (PIX-1) whose detection element (103-1) is sensitive mainly in a first wavelength range of infrared radiation (105-1) and whose emission element (107-1) is adapted to mainly emit visible light (109-1) in a second wavelength range, preferably blue light; - at least one second pixel (PIX-2) whose detection element (103-2) is sensitive mainly in a third range of infrared radiation wavelengths (105-2) different from the first range, and whose the emitting element (107-2) is adapted to emit predominantly visible light (109-2) in a fourth wavelength range different from the second range, preferably green light; and - at least one third pixel (PIX-3) whose detection element (103-3) is sensitive mainly in a fifth range of wavelengths of infrared radiation (105-3) different from the first and third ranges, and whose emission element (107-3) is adapted to emit mainly visible light (109-3) in a sixth range of wavelengths different from the second and fourth ranges, preferably red light.

12. Electronic device (1000; 1100) comprising: - a power supply circuit (1003); and - at least one device (100) according to any one of claims 1 to 11.

13. Method for manufacturing a device (100) according to any one of claims 1 to 11, comprising a step of transferring, by molecular bonding, a structure comprising the detection elements (103; 103-1, 103-2, 103-3) and the circuits (205) onto another structure comprising the emission elements (107; 107-1, 107-2, 107-3).

Images