Method for manufacturing nano-mesh membrane using ion beam irradiation process, nano-mesh membrane manufactured thereby, mask for lithography using same, optical filter for lithography process using same, patterning device including same, and optical device including same

Abstract

Provided is a method for manufacturing a nano-mesh membrane having a plurality of pores formed spaced apart from each other. The method for manufacturing a nano-mesh membrane may comprise: a step for preparing a base membrane; a step for forming a functional film on the base membrane; and a step for irradiating the base membrane, on which the functional film is formed, with ion beams so that the ion beams pass through the functional film and the base membrane, and thereby manufacturing the nano-mesh membrane having a plurality of the pores that are formed during the course of the ion beams passing through the functional film and the base membrane.

Description

Method for manufacturing a nano-mesh membrane using an ion beam irradiation process, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same

[0001] The present application relates to a method for manufacturing a membrane having a nano-mesh structure, and a nano-mesh membrane manufactured thereby, and more specifically, to a method for manufacturing a nano-mesh membrane using an ion beam irradiation process, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

[0002] As the circuit line widths of semiconductor devices rapidly shrink, the current immersion ArF exposure equipment using a light source with a wavelength of 193 nm is experiencing limitations in forming fine patterns. To achieve this without improvements in light sources and exposure equipment, techniques such as double or quadruple exposure are being applied. However, these methods pose challenges in semiconductor device manufacturing, where mass production is crucial, such as increased process frequency, higher process costs, and decreased processing capacity per hour.

[0003] To address these issues, next-generation exposure equipment is being developed that utilizes extreme ultraviolet lithography technology, which uses 13.5 nm wavelength extreme ultraviolet light as a light source. Because the 13.5 nm wavelength light used in extreme ultraviolet lithography is absorbed by almost all materials, a reflective mask, such as a mirror, is used instead of the existing transmissive mask. If impurities such as dust or foreign substances adhere to this mask, the light will be absorbed or reflected by these impurities, damaging the transferred pattern and causing problems such as a decline in the performance or yield of semiconductor devices or liquid crystal displays.

[0004] Meanwhile, the mask for semiconductor lithography is an essential element for semiconductor performance, production efficiency, and technological advancement, and is a key component that greatly affects the success or failure of semiconductor manufacturing. As the size of semiconductor circuits decreases to the nanometer level, very precise patterns must be formed, and only when the mask is accurate can the patterns of transistors and circuits inside the chip be precisely implemented, and since one mask can repeatedly print patterns on multiple wafers, numerous chips with the same pattern can be mass-produced. Therefore, the higher the quality of the mask, the lower the defect rate and the higher the production efficiency.

[0005] Regarding a nano-mesh membrane that can be utilized as a mask and filter for semiconductor lithography, Korean Patent Publication No. 10-2020-0022677 discloses a step of manufacturing an insulator by imprinting that manufactures an insulator having a pattern portion opposite to a mold, a step of surface-modifying an insulating film on which a pattern is formed to make it hydrophilic through plasma treatment, a step of applying a conductive paste to a pattern portion formed on the insulator, and a step of filling a conductive paste between patterns; A method for manufacturing a nano metal mesh through surface treatment in a roll-to-roll imprint process is disclosed, characterized in that it includes a residual paste removal step for removing the remaining residual paste. According to this, when manufacturing a metal mesh through a roll-to-roll nano imprint process, the surface of a film on which a pattern is formed is modified to be hydrophilic through plasma treatment, thereby improving the adhesiveness of a conductive paste. In addition, by performing surface modification to be hydrophilic through plasma treatment on a film on which a pattern is formed, the adhesiveness of the conductive paste and the conductive particles (silver, copper, aluminum, etc.) and binder (resin, solvent) of the conductive paste are improved, thereby improving the filling rate of the conductive paste during the electrode forming process in a nanometer-scale pattern during the electrode forming process.

[0006] The technical problem to be solved by the present application is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process with a simplified manufacturing process, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

[0007] Another technical problem to be solved by the present application is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process that is easy to mass-produce, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

[0008] Another technical problem that the present application seeks to solve is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process with improved manufacturing yield, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

[0009] Another technical problem that the present application seeks to solve is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process having a free-standing structure, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

[0010] The technical problems to be solved by the present invention are not limited to those described above.

[0011] To solve the above technical problems, the present invention provides a method for manufacturing a nano mesh membrane.

[0012] According to one embodiment, a method for manufacturing a nano-mesh membrane having a plurality of pores formed spaced apart from each other may include the steps of preparing a base membrane, forming a functional film on the base membrane, and irradiating an ion beam onto the base membrane having the functional film formed thereon, such that the ion beam penetrates the functional film and the base membrane, and manufacturing the nano-mesh membrane having a plurality of pores generated in the process of the ion beam penetrating the functional film and the base membrane.

[0013] According to one embodiment, the ion beam may include irradiating the functional film of the base membrane.

[0014] According to one embodiment, the functional film may include one having higher electrical conductivity than the base membrane.

[0015] According to one embodiment, the functional film may have a thickness thinner than the thickness of the base membrane.

[0016] According to one embodiment, the ion beam may include at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions.

[0017] To solve the above technical problems, the present application provides a nano mesh membrane.

[0018] According to one embodiment, the nano-mesh membrane may include a base membrane, and a functional film formed of a material having a higher conductivity than the base membrane and disposed on the base membrane, wherein a plurality of pores spaced apart from each other are provided penetrating the base membrane and the functional film, and the functional film may be provided on an upper surface of the base membrane, but not provided on side walls of the plurality of pores.

[0019] According to one embodiment, a portion of the base membrane forming a side wall of the plurality of pores and a portion of the functional membrane forming a side wall of the plurality of pores may be coplanar with each other.

[0020] According to one embodiment, the thickness of the functional film may be thinner than the thickness of the base membrane.

[0021] According to one embodiment, the base membrane may include an insulating material.

[0022] To solve the above technical problem, the present application provides a method of using a nano mesh membrane.

[0023] According to one embodiment, the method may include the steps of preparing the nano-mesh membrane according to the above-described embodiments, and the step of irradiating light to the nano-mesh membrane, wherein, in a wavelength band of the light irradiated to the nano-mesh membrane, light of a target wavelength band may be transmitted through the nano-mesh membrane, and light of a wavelength band different from the target wavelength band may be blocked by the nano-mesh membrane.

[0024] To solve the above technical problem, the present application provides a patterning method.

[0025] According to one embodiment, the method may include the steps of preparing the nano-mesh membrane according to the above-described embodiments, irradiating light onto the nano-mesh membrane, and causing a photosensitive membrane to react by the light transmitted through the nano-mesh membrane.

[0026] To solve the above technical problem, the present application provides an optical device.

[0027] According to one embodiment, the optical device may include a light source that generates light, the nano-mesh membrane according to any one of claims 6 to 9, onto which light generated from the light source is irradiated, and an optical system that guides light transmitted through the nano-mesh membrane to a target.

[0028] To solve the above technical problems, the present application provides an EUV lithography apparatus.

[0029] According to one embodiment, the EUV lithography apparatus may include a light source that generates EUV light, and the nano-mesh membrane according to the above-described embodiments onto which the EUV light generated from the light source is irradiated.

[0030] A method for manufacturing a nano mesh membrane may include a step of preparing a base membrane, a step of forming a functional film on the base membrane, and a step of irradiating an ion beam onto the base membrane on which the functional film is formed, such that the ion beam penetrates the functional film and the base membrane, and a step of manufacturing the nano mesh membrane having a plurality of pores generated in the process in which the ion beam penetrates the functional film and the base membrane.

[0031] Accordingly, a nano-mesh membrane having a plurality of pores arranged regularly or irregularly and spaced apart from each other can be easily manufactured with a high yield through a simple process.

[0032] Depending on the sizes of the plurality of pores of the nano-mesh membrane, the wavelength band of light transmitting through the nano-mesh membrane and the wavelength band of light blocked can be controlled. Specifically, for example, light in a wavelength band smaller than the size of the pores can have high transmittance, and light in a wavelength band larger than the size of the pores can have low transmittance.

[0033] FIG. 1 is a flowchart illustrating a method for manufacturing a nano mesh membrane according to a first embodiment of the present application.

[0034] FIG. 2 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to the first embodiment of the present application.

[0035] FIG. 3 is a drawing for explaining a nano mesh membrane manufactured according to a method for manufacturing a nano mesh membrane according to the first embodiment of the present application.

[0036] FIG. 4 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a first modified example of the first embodiment of the present application.

[0037] FIG. 5 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a second modified example of the first embodiment of the present application.

[0038] FIG. 6 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a third modified example of the first embodiment of the present application.

[0039] Figure 7 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a second embodiment of the present application.

[0040] FIG. 8 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to a second embodiment of the present application.

[0041] FIG. 9 is a drawing for explaining the ion beam irradiation process in the method for manufacturing a nano mesh membrane according to the second embodiment of the present application.

[0042] FIG. 10 is a drawing for explaining a nano mesh membrane according to a first modified example of the second embodiment of the present application.

[0043] FIG. 11 and FIG. 12 are drawings for explaining a nano mesh membrane according to a second modified example of the second embodiment of the present application.

[0044] FIG. 13 is a drawing for explaining the side walls of the pores of the nano mesh membrane according to the second modified example of the second embodiment of the present application.

[0045] FIG. 14 is a drawing for explaining a nano mesh membrane according to a third modified example of the second embodiment of the present application.

[0046] FIG. 15 is a drawing for explaining a nano mesh membrane according to a fourth modified example of the second embodiment of the present application.

[0047] Figures 16 to 18 are SEM photographs of nano mesh membranes according to experimental examples of the present application.

[0048] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to sufficiently convey the spirit of the present invention to those skilled in the art.

[0049] In this specification, when a component is referred to as being on another component, it means that it can be formed directly on the other component, or a third component may be interposed between them. In addition, in the drawings, the thicknesses of films and regions are exaggerated for the purpose of effectively explaining the technical contents.

[0050] Additionally, although terms such as first, second, and third have been used to describe various components in various embodiments of this specification, these components should not be limited by such terms. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.

[0051] Each embodiment described and illustrated herein also includes its complementary embodiments. Additionally, the terms "and / or" are used herein to mean at least one of the elements listed before and after.

[0052] In the specification, singular expressions include plural expressions unless the context clearly dictates otherwise. Furthermore, terms such as "comprises" or "has" are intended to specify the presence of a feature, number, step, component, or combination thereof described in the specification, but should not be construed as excluding the presence or addition of one or more other features, numbers, steps, components, or combinations thereof.

[0053] In addition, when describing the present invention below, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0054] In the specification of the present application, penetration and blocking are not interpreted as being limited to 100% penetration and 100% blocking, but are interpreted as having a penetration rate and blocking rate within a range acceptable to those skilled in the art.

[0055]

[0056] FIG. 1 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a first embodiment of the present application, FIG. 2 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to a first embodiment of the present application, and FIG. 3 is a drawing for explaining a nano mesh membrane manufactured according to a method for manufacturing a nano mesh membrane according to a first embodiment of the present application.

[0057] Referring to FIGS. 1 and 2, a base membrane (110) is prepared (S110). The base membrane (110) may have a plurality of first pores (114). The base membrane (110) may have a first network structure (112) defining the plurality of first pores (114). In other words, the base membrane (110) may have the first network structure (112) in a lattice structure and may have a plurality of first pores (114) defined by the first network structure (112).

[0058] The shape of the plurality of first pores (114) may be, from a planar viewpoint, a square as shown in FIG. 2, or, unlike as shown in FIG. 2, may be formed into a circle, triangle, polygon, etc.

[0059] According to one embodiment, the plurality of first pores (114) of the base membrane (110) may have the same shape and be arranged spaced apart from each other in a regular or irregular manner. Alternatively, according to another embodiment, the plurality of first pores (114) of the base membrane (110) may have different shapes and be arranged spaced apart from each other in a regular or irregular manner.

[0060] The base membrane (110) may be formed of a material usable under ultra-high vacuum and high temperatures. For example, the base membrane (110) may be a nickel mesh or a stainless steel mesh. Alternatively, as another example, the base membrane (110) may be formed of an insulating material (e.g., silicon nitride).

[0061] Continuing with reference to FIGS. 1 and 3, by reducing the first size of the first pore (114) of the base membrane (110), a nano mesh membrane (120) having second pores (124) of a second size smaller than the first size of the first pore (114) can be manufactured (S120).

[0062] In other words, the nano mesh membrane (120) may have pores of a smaller size compared to the base membrane (110), and may have substantially the same number of pores as the base membrane (110).

[0063] The step of reducing the first size of the first pore (114) of the base membrane (110) may include forming a material film (121) on the side wall and upper surface of the first network structure (112) of the base membrane (110).

[0064] In other words, the material film (121) is formed on at least a side wall of the first network structure (112) of the base membrane (110), so that the first pore (114) of the first size can be changed into the second pore (124) of the second size. Accordingly, the thickness of the material film (121) can have a thickness smaller than half the size of the first pore (114) so ​​as to fill a portion of the first pore (114) rather than all of it.

[0065] The material film (121) may be formed using a vacuum process such as electron beam deposition, thermal deposition, or sputtering to ensure stability under ultra-high vacuum and high temperature conditions. In other words, the material film (121) may be formed using a vacuum-based deposition process rather than a deposition using a chemical method (e.g., a solution process), thereby enabling the material film (121) to have high reliability under ultra-high vacuum and high temperature environments.

[0066] Alternatively, according to one embodiment, the material film (121) may be formed by a self-assembly process of coating self-assembling molecules on the base membrane (110) and heat-treating them.

[0067] As described above, according to the first embodiment of the present application, the material film (121) may be formed on at least a side wall of the first network structure (112) of the base membrane (110), so that the nano mesh membrane (120) may be formed, and the nano mesh membrane (120) may have a second network structure (122) defining the second pores (124).

[0068] In addition, the thickness of the material film (121) can be controlled by a method of controlling process variables in a vacuum deposition process, and the size of the second pores (124) of the nano mesh membrane (120) can be easily controlled by a method of controlling the thickness of the material film (121).

[0069] The material film (121) may be formed of a material that can easily conformally cover the base membrane (110) having the first pores (114). For example, the material film (121) may be formed using a vacuum deposition process with excellent coverage, such as an atomic layer deposition process.

[0070] According to one embodiment, the nano mesh membrane (120) can be used as a mask for a lithography process. Specifically, it can be used as a mask for a lithography process using EUV light, ArF light, electron beam, UV, DUV, X-ray, etc.

[0071] When the above nano mesh membrane (120) is used as a mask for an electron beam lithography process, the material film (121) can be formed of a conductive material. Therefore, electrons can be prevented from accumulating in the nano mesh membrane (120) during the electron beam lithography process, and the lifespan of the nano mesh membrane (120) can be extended.

[0072]

[0073] According to a first modified example of the first embodiment, in the first embodiment of the present application described above, an interfacial bonding layer (123) may be formed before forming the first material film (121) on the first network structure (122) of the base membrane (110). Hereinafter, with reference to FIG. 4, a first modified example of the first embodiment of the present application will be described.

[0074] FIG. 4 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a first modified example of the first embodiment of the present application.

[0075] Referring to FIG. 4, in the method for manufacturing a nano mesh membrane (120) according to the first embodiment described with reference to FIGS. 1 to 3, before forming the first material film (121), an interface bonding layer (123) may be formed on the first network structure (122) of the base membrane (110), and the first material film (121) may be formed on the interface bonding layer (123).

[0076] Due to the interfacial bonding layer (123), the first material film (121) can be easily and conformally formed on the side wall of the first network structure (122) of the base membrane (110). For example, the interfacial bonding layer (123) can include silicon, zirconium, platinum, or the like.

[0077] According to one embodiment, the thickness of the interfacial bonding layer (123) may be thinner than the thickness of the material film (121). In addition, the sum of the thicknesses of the interfacial bonding layer (123) and the material film (121) may have a thickness smaller than half the size of the first pore (114) so ​​as to fill a portion but not all of the first pore (114) of the base membrane (110).

[0078]

[0079] According to a second variation of the first embodiment, in the first embodiment of the present application described above, the base membrane (110) may be pretreated. Hereinafter, with reference to FIG. 5, a second variation of the first embodiment of the present application will be described.

[0080] FIG. 5 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a second modified example of the first embodiment of the present application.

[0081] Referring to FIG. 5, in the method for manufacturing a nano mesh membrane (120) according to the first embodiment described with reference to FIGS. 1 to 3, before forming the material film (121), the base membrane (110) may be pretreated (130). After the base membrane (110) is pretreated (130), the material film (121) may be formed by the method described with reference to FIGS. 1 to 3.

[0082] The pretreatment (130) of the base membrane (110) may include at least one of ozone treatment of the surface of the base membrane (110), irradiation of the surface of the base membrane (110) with an ion beam (e.g., gallium ions, argon ions, neon ions, helium ions, hydrogen ions), heat treatment of the base membrane (110), or hydrogen treatment (hydrogen radical treatment, hydrogen plasma treatment) of the base membrane (110).

[0083] According to one embodiment, the base membrane (110) may be irradiated with an ion beam, and then the base membrane (110) may be heat-treated. As a result, the material film (121) may be easily formed on the side wall of the first network structure (112) of the base membrane (110), and accordingly, by forming the material film (121) on the base membrane (110), the nano-mesh membrane (120) having smaller pores than the base membrane (110) may be easily formed.

[0084] In addition, according to one embodiment, when irradiating the base membrane (110) with an ion beam, in order to prevent the ion beam from being concentratedly irradiated to only one area of ​​the base membrane (110) due to the directionality of the ion beam, the ion beam may be irradiated while the base membrane (110) rotates with the normal direction of the upper surface of the base membrane (110) as the rotation axis. As a result, the plus deviation of the ion beam irradiated to each area of ​​the base membrane (110) may be eliminated. In addition, according to one embodiment, the ion beam may be irradiated while rotating in a state where the irradiation direction of the ion beam and the normal direction of the upper surface of the base membrane (110) intersect each other (or form an acute angle).

[0085]

[0086] According to a third modified example of the first embodiment, in the first embodiment of the present application described above, the side wall of the first pore (114) of the base membrane (110) may be inclined. Hereinafter, with reference to FIG. 6, a third modified example of the first embodiment of the present application will be described.

[0087] FIG. 6 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a third modified example of the first embodiment of the present application.

[0088] Referring to FIG. 6, according to the manufacturing method of the nano mesh membrane (120) according to the first embodiment described with reference to FIGS. 1 to 3, the nano mesh membrane (120) is manufactured, but the side wall of the first pore (114) defined by the first network structure (112) of the base membrane (110) (the side wall of the first network structure (112)) may be in a tilted state.

[0089] More specifically, when the first material film (121) is formed on the first surface of the base membrane (110), the width of the first pore (114) in the region adjacent to the first surface may be wider than the width of the first pore (114) in the region adjacent to the second surface of the base membrane (120) facing the first surface. As a result, the material film (121) can be easily formed on the inclined side wall of the first network structure (112).

[0090] On the other hand, unlike the third modified example of the first embodiment of the present invention described above, when the width of the first pore (114) is constant (in other words, when the side wall of the first network structure (112) defining the first pore (114) is not inclined), it may not be easy to form the material film (121) on the side wall of the first network structure (112), and thus, the nano mesh membrane (120) having pores smaller than those of the base membrane (110) may not be easily manufactured.

[0091] However, as described above, according to the third modified example of the first embodiment of the present application, the side wall of the first network structure (112) of the base membrane (110) can be provided in an inclined state, and thus, the material film (121) can be easily formed on the inclined side wall. In conclusion, the material film (121) is easily formed on the side wall of the first network structure (112), and thus, the nano mesh membrane (120) can be easily formed.

[0092] Meanwhile, according to one embodiment, by irradiating an ion beam onto the first surface of the base membrane (110), the side wall of the first network structure (112) may be formed in an inclined state. In other words, when an ion beam focused onto the first surface of the base membrane (110) is irradiated, an area adjacent to the first surface of the base membrane (110) is etched due to the irradiation of the focused ion beam, so that, as described above, the width of the first pore (114) in the area adjacent to the first surface may become wider than the width of the first pore (114) in the area adjacent to the second surface.

[0093]

[0094] Hereinafter, a method for manufacturing a nano mesh membrane according to a second embodiment of the present application is described.

[0095] FIG. 7 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a second embodiment of the present application, FIG. 8 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to a second embodiment of the present application, and FIG. 9 is a drawing for explaining an ion beam irradiation process in a method for manufacturing a nano mesh membrane according to a second embodiment of the present application.

[0096] Referring to FIGS. 7 and 8, a base membrane (210) is prepared (S210). The base membrane (210) may be a flat substrate or base material without pores, as illustrated in FIG. 8. However, this does not exclude the possibility that some pores exist within the base membrane (210).

[0097] For example, the base membrane (210) may be formed of silicon nitride (ex. Si3N4).

[0098] Referring to FIG. 7 and FIG. 9, by irradiating the base membrane (210) with an ion beam (225), the ion beam (225) penetrates the base membrane (210), and in the process of the ion beam (225) penetrating the base membrane (210), a nano mesh membrane (220) having a plurality of pores (224) can be manufactured (S220).

[0099] The ion beam (225) may include, for example, gallium ions, ions of an inert gas (helium, argon, or neon), or hydrogen ions. If the intensity of the ion beam (225) is excessively strong, the base membrane (210) may be damaged, and if the intensity of the ion beam (225) is excessively weak, excessive time may be required to manufacture the nano-mesh membrane (220), resulting in high costs. According to one embodiment, if the ion beam (225) is a gallium ion beam, the energy of the gallium ion beam may be 5 to 30 KV and the intensity may be 1 pA to 65 nA.

[0100] Additionally, according to one embodiment, the ion beam (225) may be a focused ion beam or a wide-area ion beam.

[0101] According to an embodiment of the present application, the nano mesh membrane (220) can be easily manufactured by a simple method of irradiating the base membrane (210) with the ion beam (225). In addition, the size and arrangement of the pores (224) of the nano mesh membrane (220) can be easily controlled by a simple method of controlling the type, intensity, and energy of the ion beam (225).

[0102] According to one embodiment, after the nano mesh membrane (220) is formed, a coating layer may be formed on the nano mesh membrane (220). For example, Au, Pt, etc. may be formed as the coating layer, and the coating layer may be formed using a vacuum deposition process such as electron beam deposition, thermal deposition, or sputtering. Accordingly, the nano mesh membrane (220) may be utilized as a filter that blocks X-rays, ultraviolet rays, visible light, infrared rays, etc., and transmits EUV light.

[0103] In addition, according to one embodiment, the nano mesh membrane (220) manufactured according to the second embodiment of the present application may be defined as the base membrane (110) according to the first embodiment of the present application described with reference to FIGS. 1 to 3. That is, the material film (121) may be formed on the base membrane (110) having the first pores (114) generated by irradiating the ion beam (225), so that the nano mesh membrane (120) having the second pores (124) smaller than the first pores (114) may be formed. The nano mesh membrane (220) manufactured according to the modified examples of the second embodiment described below may also be defined as the base membrane (110) according to the first embodiment of the present application described with reference to FIGS. 1 to 3.

[0104] As described above, when the nano mesh membrane (220) is manufactured by irradiating the ion beam (225), doping ions may be provided within the network structure defining the pores (224) of the nano mesh membrane (220). The doping ions may be residual ions used in the irradiation of the ion beam (225). In other words, for example, the doping ions may include at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions.

[0105] When the ion beam (225) is irradiated to the first surface of the nano mesh membrane (220), according to one embodiment, the concentration of the doping ion in the first region adjacent to the first surface may be higher than the concentration of the doping ion in the second region adjacent to the second surface opposite to the first surface.

[0106] Depending on the presence and / or concentration profile of the doping ions, it can be traced back to the fact that the nano mesh membrane (220) was formed by irradiating the ion beam (225).

[0107]

[0108] According to a first modified example of the second embodiment, in the second embodiment of the present application described above, the base membrane (220) may have a plurality of concave portions. Hereinafter, with reference to FIG. 10, a first modified example of the second embodiment of the present application will be described.

[0109] FIG. 10 is a drawing for explaining a nano mesh membrane according to a first modified example of the second embodiment of the present application.

[0110] Referring to Fig. 10, the base membrane (210) may include a plurality of concave portions spaced apart from each other. As described with reference to Figs. 7 to 9, the ion beam (225) may be irradiated onto the base membrane (210) to manufacture the nano-mesh membrane (220). In other words, the ion beam (225) may pass through the plurality of concave portions of the base membrane (210), and the nano-mesh membrane (220) having a plurality of pores (224) generated in the process of the ion beam (225) passing through the plurality of concave portions of the base membrane (210) may be manufactured.

[0111] For example, the base membrane (210) having a plurality of concave portions may be formed by an imprinting method. That is, when forming pores penetrating the inside by an imprinting method, the base membrane (210) may be damaged due to excessive pressure application. On the other hand, according to the first modified example of the second embodiment of the present application as described above, the base membrane (210) may have the concave portions, and the ion beam (225) is irradiated to the base membrane (210) having the concave portions, so that the nano-mesh membrane (220) having the pores (224) penetrating the inside can be easily manufactured.

[0112]

[0113] According to a second variation of the second embodiment, in the second embodiment of the present application described above, a functional film (230) may be formed on the base membrane (220). Hereinafter, with reference to FIGS. 11 and 12, a second variation of the second embodiment of the present application will be described.

[0114] FIG. 11 and FIG. 12 are drawings for explaining a nano mesh membrane according to a second modified example of the second embodiment of the present application, and FIG. 13 is a drawing for explaining a side wall of a pore of a nano mesh membrane according to a second modified example of the second embodiment of the present application.

[0115] Referring to FIGS. 11 to 13, the base membrane (210) may be provided as described with reference to FIGS. 7 to 9, and a functional film (230) may be formed on the base membrane (210).

[0116] The functional film (230) may be a conductive metal film. In addition, the functional film (230) may be formed of a material having higher conductivity than the base membrane (210). For example, the functional film (230) may include platinum (Pt). The functional film (230) may be formed to conformally cover the base membrane (210) by a sputtering method, and the thickness of the functional film (230) may be 5 to 10 nm.

[0117] After the functional film (230) is formed, the base membrane (210) can be irradiated with the ion beam (225) as described with reference to FIGS. 7 to 9. If the base membrane (210) is formed of a non-conductive material (e.g., Si3N4), it is not easy to manufacture the nano-mesh membrane (220) by irradiating the ion beam (225). In other words, as ions accumulate (charging effect) inside the non-conductive base membrane (210) by the ion beam (225), the subsequent focusing and path of the ion beam (225) may be obstructed. However, when the functional film (230) having conductivity as described above is formed on the base membrane (210), the phenomenon of ions accumulating can be minimized, and thus, the nano mesh membrane (220) can be easily formed with the ion beam (225).

[0118] If the thickness of the functional film (230) is excessively thin, charging may occur due to the ion beam (225), and if the thickness of the functional film (230) is excessively thick, the pores (224) may not be easily formed by the ion beam (225). Accordingly, the thickness of the functional film (230) may be thinner than the thickness of the base membrane (210), and for example, the thickness of the functional film (230) may be 5 to 10 nm as described above.

[0119] For example, when the base membrane (210) is silicon nitride, the functional film (230) is platinum, and the ion beam (225) contains gallium ions, the nano mesh membrane (220) having a line width of 100 nm can be manufactured.

[0120] According to one embodiment, the step of forming the functional film (230) and the step of irradiating the ion beam (225) may be performed repeatedly and alternately. Accordingly, the phenomenon of ions accumulating inside the base membrane (210) due to loss of the functional film (230) during the irradiation of the ion beam (225) can be minimized.

[0121] The pores (224) formed by the ion beam (225) may be spaced apart from each other and may be provided by penetrating the base membrane (210) and the functional film (230). In addition, as described above, after the functional film (230) is formed on the base membrane (210), the pores (224) are formed by irradiation with the ion beam (225), so that the functional film (230) may not be provided on the side walls of the plurality of pores (224).

[0122] In addition, as illustrated in FIG. 13, a portion (210s) of the base membrane (210) forming the side walls of the plurality of pores (224) and a portion (230s) of the functional membrane (230) forming the side walls of the plurality of pores (230) may be coplanar with each other. In other words, after the functional film (230) is formed on the base membrane (210), a plurality of pores (230) can be formed by the ion beam (225) sequentially passing through the functional film (230) and the base membrane (210), and thus, a portion (210s) of the base membrane (210) forming the side walls of the plurality of pores (224) and a portion (230s) of the functional film (230) forming the side walls of the plurality of pores (230) can form a coplanar surface with each other.

[0123]

[0124] According to a third modified example of the second embodiment, in the third embodiment of the present application described above, the base membrane (220) may rotate during the process of irradiating the ion beam (225) onto the base membrane (220). Hereinafter, with reference to FIG. 14, a third modified example of the second embodiment of the present application will be described.

[0125] FIG. 14 is a drawing for explaining a nano mesh membrane according to a third modified example of the second embodiment of the present application.

[0126] Referring to FIG. 14, the base membrane (210) is provided as described with reference to FIGS. 7 to 9, and the base membrane (210) can rotate during the process of irradiating the ion beam (225) to the base membrane (210).

[0127] Specifically, the ion beam (225) may be irradiated while the base membrane (210) rotates with the normal direction (240) of the upper surface of the base membrane (210) as the rotation axis. As a result, the positive deviation of the ion beam (225) irradiated to each area of ​​the base membrane (210) may be eliminated. In addition, according to one embodiment, the ion beam (225) may be irradiated while rotating in a state where the irradiation direction of the ion beam (225) and the normal direction (240) of the upper surface of the base membrane (210) intersect each other (or form an acute angle).

[0128]

[0129] According to a fourth modified example of the second embodiment, after the functional film (230) is formed and pores (224) are formed according to the second modified example of the second embodiment of the present application described with reference to FIGS. 11 to 13, a material film may be additionally formed according to the first modified example of the present application described with reference to FIGS. 1 to 3. Hereinafter, a fourth modified example of the second embodiment according to the embodiment of the present application will be described with reference to FIG. 15.

[0130] FIG. 15 is a drawing for explaining a nano mesh membrane according to a fourth modified example of the second embodiment of the present application.

[0131] Referring to FIG. 15, according to a second modified example of the second embodiment of the present application described with reference to FIGS. 11 to 13, the functional film (230) is formed on the base membrane (210), and the ion beam (225) is irradiated, so that a plurality of pores (224) can be formed.

[0132] Thereafter, a material film (240) can be formed in the same manner as the method for manufacturing the material film (121) according to the first embodiment of the present application described with reference to FIGS. 1 to 3. The material film (240) can cover the side walls of the pores (224), and the material film can cover the upper surface of the functional film (230). Accordingly, the size of the pores (224) can be reduced, and the size of the pores (224) can be controlled by a simple method for controlling the thickness of the material film (240).

[0133] The doping ions injected by the ion beam (225) may be provided within the functional film (230) and / or the base membrane (210), and the doping ions may include, for example, at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions. On the other hand, the doping ions may not be provided within the material film (240) formed after the ion beam (225) is injected.

[0134] In addition, the material film (240) is intended to reduce the pore size of a membrane in which pores (224) have already been formed, as described with reference to FIGS. 1 to 3, and can be formed using a material and manufacturing process that can be easily controlled in thickness and can be manufactured conformally.

[0135] In addition, according to one embodiment, in order to prevent ions from accumulating by the ion beam (225) as described above, the functional film (230) may be formed of a material having a higher electrical conductivity compared to the material film (240). In this case, the functional film (230) having a relatively high conductivity and the material film (240) having a relatively low conductivity may be sequentially provided on the upper surface of the base membrane (210), and the material film (240) may be provided on the sidewall of the pore (224).

[0136] Alternatively, according to another embodiment, the material film (121) may be formed of the same conductive material as the functional film (230). In this case, a conductive material having a relatively thick thickness may be provided on the upper surface of the base membrane (210), and a conductive material having a relatively thin thickness may be provided on the side walls of the pores (224).

[0137]

[0138] Below, the results of evaluating the characteristics of a nano mesh membrane according to a specific experimental example of the present application are described.

[0139] Figures 16 to 18 are SEM photographs of nano mesh membranes according to experimental examples of the present application.

[0140] Referring to FIGS. 16 to 18, a 100 nm thick silicon nitride membrane was prepared as a base membrane. Platinum was deposited as a functional film on the silicon nitride membrane to a thickness of 5 to 10 nm using a sputtering process.

[0141] Afterwards, a gallium ion beam was applied at 30 kV to form pores penetrating the silicon nitride membrane on which platinum was formed.

[0142] By controlling the focus size of the gallium ion beam, groove-shaped pores extending in parallel with a relatively narrow width and cross-shaped pores with a relatively wide width were formed.

[0143] As shown in FIGS. 16 to 18, it can be confirmed that pores of various shapes can be formed and pores of various sizes can be easily formed.

[0144]

[0145] The nano-mesh membrane manufactured according to the above-described embodiments and modifications can be utilized as an optical filter. More specifically, when light is irradiated to the nano-mesh membrane, in the wavelength band of the light irradiated to the nano-mesh membrane, light of a target wavelength band can be transmitted through the nano-mesh membrane, and light of a wavelength band different from the target wavelength band can be blocked by the nano-mesh membrane. For example, the light of the target wavelength band can be EUV light, and the light of the other wavelength band can be hard X-ray. When the thickness of the base membrane and / or the functional film constituting the nano-mesh membrane is too thin, or when the material constituting the base membrane and / or the functional film is not suitable for blocking light of the other wavelength band, the light of the other wavelength band can be easily blocked by a method of forming a material film suitable for blocking light of the other wavelength band to a sufficient thickness.

[0146] In addition, the nano-mesh membrane manufactured according to the above-described embodiments and variations can be used in a patterning process. More specifically, the nano-mesh membrane manufactured according to the above-described embodiments and variations is prepared, and light (e.g., EUV, ArF, ion beam, electron beam, visible light, UV, soft x-ray (including water window), hard x-ray, etc.) is irradiated onto the nano-mesh membrane, and a photosensitive film (e.g., photoresist) can react by the light transmitted through the nano-mesh membrane. In particular, the nano-mesh membrane according to the above-described embodiments and variations can be used as a mask for a patterning process (lithography process) using an electron beam.

[0147] In addition, the nano-mesh membrane manufactured according to the above-described embodiments and modifications can be used as a filter (e.g., a pellicle) that filters light. More specifically, the nano-mesh membrane can have remarkably high transmittance for light of a first wavelength band to be transmitted (e.g., EUV) and remarkably low transmittance for light of a second wavelength band to be blocked (e.g., UV, visible light, X-rays, infrared, etc.).

[0148] Additionally, the nano-mesh membrane manufactured according to the above-described embodiments and variations may be incorporated into an optical device. In this case, light may be irradiated onto the nano-mesh membrane by a light source that generates light, and an optical system that guides the light transmitted through the nano-mesh membrane to a target may be incorporated into the optical device.

[0149] Additionally, the nano-mesh membrane manufactured according to the above-described embodiments and variations may include an EUV lithography apparatus. In this case, EUV light may be provided to the nano-mesh membrane by a light source that generates EUV light.

[0150] In addition, the nano-mesh membrane manufactured according to the above-described embodiments and modifications can be utilized to manufacture other filters. For example, the nano-mesh membrane manufactured according to the above-described embodiments and modifications can be manufactured into a filter by patterning a photosensitive film on a material film using a patterning process (e.g., EUV, ArF, electron beam, etc.) as a mask, and etching the material film using the patterned photosensitive pattern of the photosensitive film as a mask.

[0151] Additionally, the nano-mesh membrane manufactured according to the above-described embodiments and modifications can be used to serve as a filter that performs the physical function of filtering particles.

[0152]

[0153] While the present invention has been described in detail using preferred embodiments, the scope of the present invention is not limited to the specific embodiments described above, and should be interpreted in accordance with the appended claims. Furthermore, those skilled in the art will appreciate that numerous modifications and variations are possible without departing from the scope of the present invention.

[0154] The nano mesh membrane according to the embodiment of the present application can be used for various purposes such as a lithography process, an optical filter, a particle filter, a mask for filter production, etc.

Claims

1. A method for manufacturing a nano mesh membrane having a plurality of pores formed spaced apart from each other, Steps to prepare the base membrane; A step of forming a functional film on the above base membrane; and A method for manufacturing a nano mesh membrane, comprising the step of irradiating an ion beam onto the base membrane on which the functional film is formed, allowing the ion beam to penetrate the functional film and the base membrane, and manufacturing the nano mesh membrane having a plurality of pores created in the process of the ion beam penetrating the functional film and the base membrane.

2. In paragraph 1, A method for manufacturing a nano mesh membrane, wherein the ion beam is irradiated onto the functional film of the base membrane.

3. In paragraph 1, A method for manufacturing a nano mesh membrane, wherein the functional membrane has higher electrical conductivity than the base membrane.

4. In paragraph 1, A method for manufacturing a nano mesh membrane, wherein the functional membrane has a thickness thinner than the thickness of the base membrane.

5. In paragraph 1, A method for manufacturing a nano mesh membrane, wherein the ion beam includes at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions.

6. Base membrane; and A functional film is formed of a material having higher conductivity than the base membrane and is disposed on the base membrane, A plurality of pores spaced apart from each other are provided to penetrate the base membrane and the functional membrane, A nano mesh membrane including the functional film provided on the upper surface of the base membrane, but not provided on the side walls of the plurality of pores.

7. In paragraph 6, A nano mesh membrane comprising a portion of the base membrane forming side walls of the plurality of pores and a portion of the functional membrane forming side walls of the plurality of pores, wherein the portions are coplanar with each other.

8. In paragraph 6, A nano mesh membrane comprising a functional membrane having a thickness thinner than that of the base membrane.

9. In paragraph 6, The above base membrane is a nano mesh membrane containing an insulating material.

10. A step of preparing the nano mesh membrane according to any one of claims 6 to 9; and Including the step of irradiating the above nano mesh membrane light, A method of utilizing a nano-mesh membrane, wherein, in a wavelength band of light irradiated to the nano-mesh membrane, light of a target wavelength band transmits the nano-mesh membrane, and light of a wavelength band other than the target wavelength band is blocked by the nano-mesh membrane.

11. A step of preparing the nano mesh membrane according to any one of claims 6 to 9; A step of irradiating the above nano mesh membrane light; A patterning method comprising a step of causing a photosensitive film to react to light passing through the nano mesh membrane.

12. A light source that produces light; The nano mesh membrane according to any one of claims 6 to 9, wherein light generated from the light source is irradiated; and An optical device including an optical system that guides light transmitted through the nano mesh membrane to a target.

13. A light source that generates EUV light; and An EUV lithography apparatus comprising the nano-mesh membrane according to any one of claims 6 to 9, wherein EUV light generated from the light source is irradiated.

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